KR20200138938A - Method of patterning liquid metal using stamp - Google Patents

Abstract

The present invention relates to a method for patterning a liquid metal by applying oxide particles of a liquid metal on a substrate and pressing the same using a stamp and, more specifically, to a method for patterning a liquid metal, which can minimize an electrical influence between adjacent conductive patterns.

Description

Method for patterning liquid metal using a stamp {METHOD OF PATTERNING LIQUID METAL USING STAMP}

The present invention relates to a conductive pattern substrate using a liquid metal, and more particularly, to a stamp for forming a conductive pattern, a method of manufacturing a conductive pattern substrate using the stamp, and a conductive pattern substrate prepared through the stamp.

With the recent development of IoT technology, various sensor devices are being developed. For example, a biological monitoring device attached to an animal such as a human is attached to the body surface to measure body fluid components, or collect body temperature information, heart rate information, location information, and various other information, and monitor physical activity based on the collected information. Can be managed. For another example, a food safety monitoring device attached to a food may collect information on a distribution history and quality of food to secure food safety and contribute to the promotion of public health.

Such a sensor device must satisfy various characteristics depending on the surface to be provided. In the case of the above-described biological monitoring or food monitoring device, if the target surface to which the sensor device is attached is curved, and further, the target surface is fluid and the adhesion between the target surface and the sensor device is poor, the problem of remarkably deteriorating sensing sensitivity may occur. have. Therefore, there is an urgent need to develop a technology for implementing a sensor device having complete flexibility.

As one method for implementing a flexible sensor device, and furthermore, a flexible conductive pattern substrate, the formation of a conductive pattern using a liquid metal is exemplified.

US registered patent US 9,945,739 B2 (2018.04.17.) US registered patent US 10,184,779 B2 (2019.01.22.) US registered patent US 8,826,747 B2 (2014.09.09.) US Patent Publication US 2019-0003818 A1 (2019.01.03.) US Patent Publication US 2018-0192911 A1 (2018.07.12.) US Patent Publication US 2018-0305563 A1 (2018.10.25.) US published patent US 2017-0312849 A1 (2017.11.02.)

Patent Document 1 (US 9,945,739 B2) discloses a pressure and temperature sensor using an amorphous metal. Specifically, Patent Document 1 discloses a sensor device having stretchable properties so that it can be used for electronic skin use. Patent Document 1 uses an amorphous metal and its alloy to form a device wiring in order to implement a flexible sensor, but the sensor device of Patent Document 1 also only uses a metal layer with improved flexibility, and the degree to which the device is bent. It still has a problem that the wiring is damaged if it is large or is completely folded.

In addition, Patent Document 2 (US 10,184,779 B2) discloses an elastic electrode and a sensor sheet used for a sensor having elasticity, such as in the field of medical materials such as artificial muscle or artificial skin. Patent Document 2 teaches that an electrode body is formed by using fibers using multi-walled carbon nanotubes. However, although the carbon nanotubes of Patent Document 2 can be formed locally, there is a limit in which it is extremely difficult to form a wiring or the like.

In addition, various attempts have been made to implement a flexible sensor device, such as Patent Document 3 (US 8,826,747 B2), Patent Document 4 (US 2019-0003818 A1), and Patent Document 5 (US 2018-0192911 A1).

In addition, Patent Document 6 (US 2018-0305563 A1) discloses a method of forming a conductive pattern using a liquid metal mixture. Patent Document 6 discloses forming a conductive pattern through a method of pressing or heating a liquid metal mixture.

In addition, a method of discharging liquid metal like ink jet has been developed to form a conductive pattern using liquid metal. For example, Patent Document 7 (US 2017-0312849 A1) discloses an extruder for injecting or discharging liquid metal.

On the other hand, electronic devices, such as sensors, are composed of electronic circuits constructed using various active elements and passive elements. However, when a conductive pattern constituting an electronic circuit, that is, a wiring part, is partially damaged or deformed, the electronic device does not exhibit stable characteristics and is difficult to use industrially. Therefore, a technique of forming a stable conductive pattern using a liquid metal that maintains a liquid state at room temperature is very important.

However, most of the conventional techniques are limited to injecting a liquid metal into a trench formed in a substrate. In this case, it is difficult to form a free pattern shape, and there are various limitations in the pattern formation process. For this reason, a conductive pattern using a liquid metal cannot replace a metal wiring formed through an existing deposition or the like. In addition, there is a problem in that it is difficult to form a fine pattern due to the fluidity of the liquid metal itself.

Accordingly, the problem to be solved by the present invention is to provide a conductive pattern substrate capable of free pattern formation by improving the process compared to the prior art. In addition, despite having a fine pattern, it is to provide a conductive pattern substrate in which the electrical influence between adjacent patterns is minimized.

Another problem to be solved by the present invention is to provide a method of manufacturing a conductive pattern substrate using a liquid metal that is difficult to control by maintaining a liquid state at room temperature.

In addition, another problem to be solved by the present invention is to provide a stamp for forming a conductive pattern that can easily form a conductive pattern using a liquid metal.

The problems of the present invention are not limited to the technical problems mentioned above, and other technical problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

A conductive pattern substrate according to an embodiment of the present invention for solving the above problem includes: a base substrate having a trench formed on one surface thereof; And a liquid metal pattern disposed on the one surface of the base substrate, wherein the liquid metal pattern is disposed on a portion protruding relative to the trench of the base substrate.

The thickness of the liquid metal pattern may be greater than the maximum depth of the trench.

Further, the liquid metal pattern may be non-overlapping with the trench.

In some embodiments, the conductive pattern substrate is disposed on the liquid metal pattern, and may further include a protective layer contacting the base substrate and the liquid metal pattern.

Here, the protective layer may at least partially fill the trench, and the protective layer may be positioned between liquid metal patterns adjacent to each other in a plan view.

The liquid metal pattern may include a first liquid metal pattern and a second liquid metal pattern that are spaced apart from each other and are in a non-conductive state.

Here, the first liquid metal pattern is from a first portion extending in a first direction, a second portion extending from the first portion and extending in a second direction crossing the first direction, and the second portion. It may include a third portion extending in a direction crossing the second direction.

In addition, the second liquid metal pattern may include a first portion extending parallel to the first portion of the first liquid metal pattern, a second portion extending from the first portion and extending in a direction different from the first portion And a third portion extending from the second portion and extending parallel to the third portion of the first liquid metal pattern.

In addition, in a plan view, the first part of the first liquid metal pattern is located between the first part and the third part of the second liquid metal pattern, and in a plan view, the third part of the first liquid metal pattern Silver may be positioned between the first portion of the first liquid metal pattern and the third portion of the second liquid metal pattern.

In some embodiments, the conductive pattern substrate may further include a high dielectric layer disposed between the base substrate and the protective layer.

The high-k layer is between a first portion of the first liquid metal pattern and a first portion of the second liquid metal pattern, and between a third portion of the first liquid metal pattern and a third portion of the second liquid metal pattern Can be located in

In addition, the high-k layer may not be positioned between the first portion and the third portion of the first liquid metal pattern.

Furthermore, the high-k layer may not overlap the trench.

A method of manufacturing a conductive pattern substrate according to an embodiment of the present invention for solving the above other problems includes the steps of applying metal nanoparticles on a base substrate; Placing a stamp on the metal nanoparticles and pressing the metal nanoparticles using the stamp; Removing metal nanoparticles in portions not covered by the stamp; And after removing the metal nanoparticles, removing the stamp.

The metal nanoparticles may be liquid metal-oxide nanoparticles in which liquid metal is encapsulated by an oxide film on the surface.

In addition, the average particle size of the metal nanoparticles may be 100nm to 300nm.

In the step of pressing the metal nanoparticles using the stamp, the metal nanoparticles are liquefied and may form a conductive pattern.

In some embodiments, between the step of removing the metal nanoparticles and the step of removing the stamp, further comprising forming a high dielectric layer partially on the surface of the base substrate exposed by removing the metal nanoparticles can do.

In some embodiments, the method of manufacturing the conductive pattern substrate may further include forming a protective layer to contact the base substrate, the conductive pattern, and the high dielectric layer.

The stamp for forming a conductive pattern according to an embodiment of the present invention for solving the another problem is a stamp for forming a conductive pattern having a pressing surface extending in one direction, wherein the pressing surface is a base surface and an edge of the base surface It has a trench formed including sidewalls protruding from the portion.

An inner surface of the sidewall may have a slope, and an end of the sidewall may form a tip.

The pressing surface of the stamp may further include a protrusion protruding from the central portion of the base surface.

Further, the height of the sidewall may be greater than the maximum height of the protrusion.

In addition, the protrusion may have a shape of a partition wall extending along an extension direction of the pressing surface.

Details of other embodiments are included in the detailed description.

According to embodiments of the present invention, it is possible to provide a space in which a conductive pattern using a liquid metal is formed, that is, a conductive pattern substrate in which a conductive pattern in a free form is formed without forming a separate trench in a base substrate, and a method of manufacturing the same. .

In addition, despite the use of a liquid metal, an electrical influence between adjacent conductive patterns can be minimized, and through this, a finer pattern can be formed.

In addition, it is possible to provide a stamp for forming a conductive pattern capable of manufacturing a conductive pattern substrate exhibiting excellent properties while reducing process cost.

Effects according to the embodiments of the present invention are not limited by the contents illustrated above, and more various effects are included in the present specification.

1 is a rear perspective view of a stamp for forming a conductive pattern according to an embodiment of the present invention.
2 is a rear perspective view of a stamp for forming a conductive pattern according to another embodiment of the present invention.
3 is a cross-sectional view taken along line AA′ of FIG. 2.
4 and 5 are cross-sectional views of a stamp for forming a conductive pattern according to another embodiment of the present invention.
6 to 8 are plan views of a stamp for forming a conductive pattern according to another embodiment of the present invention.
9 is a plan view of a conductive pattern substrate according to an embodiment of the present invention.
10 is a cross-sectional view taken along line BB′ of FIG. 9.
11 is a plan view of a conductive pattern substrate according to another embodiment of the present invention.
12 is a cross-sectional view taken along line CC′ of FIG. 11.
13 is a flowchart illustrating a method of manufacturing a conductive pattern substrate according to an embodiment of the present invention.
14 is a flow chart showing in detail the step of granulating the liquid metal of FIG. 13.
15 to 17 are views for explaining the step of granulating the liquid metal of FIG. 14.
18 is a schematic diagram showing a granulated liquid metal.
19 to 27 are views illustrating a method of manufacturing the conductive pattern substrate of FIG. 13.
28 is a flowchart illustrating a method of manufacturing a conductive pattern substrate according to another embodiment of the present invention.
29 to 34 are diagrams for describing a method of manufacturing the conductive pattern substrate of FIG. 28.
35 and 36 are images of a conductive pattern according to Experimental Example 1.
37 and 38 are images of a conductive pattern according to Experimental Example 2.

Advantages and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms different from each other, and only the embodiments make the disclosure of the present invention complete, and those skilled in the art to which the present invention pertains. It is provided to fully inform the person of the scope of the invention, and the invention is only defined by the scope of the claims.

Spatially relative terms such as'above','upper','on','below','beneath', and'lower' are As shown, it may be used to easily describe the correlation between one device or components and other devices or components. Spatially relative terms should be understood as terms including different directions of the device when used in addition to the directions shown in the drawings. For example, when an element shown in the figure is turned over, an element described as'below or beneath' another element may be placed'above' another element. Therefore, the exemplary term'below' may include both the lower and upper directions.

The terms used in the present specification are for describing exemplary embodiments and are not intended to limit the present invention. In this specification,'and/or' includes each and every combination of one or more of the recited items. In addition, the singular form also includes the plural form unless otherwise stated in the text. As used in the specification,'comprises' and/or'comprising' does not exclude the presence or addition of one or more other elements other than the mentioned elements. Numerical ranges indicated using'to' represent numerical ranges including the values listed before and after them as lower and upper limits, respectively. "About" or "approximately" means a value or numerical range within 20% of the value or numerical range described thereafter.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used as meanings that can be commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not interpreted ideally or excessively unless explicitly defined specifically.

In this specification, the first direction (X) refers to an arbitrary direction in the plane, and the second direction (Y) refers to another direction in the plane that intersects the first direction (X). In addition, the third direction Z means a direction perpendicular to the plane. Unless otherwise defined, a'plane' means a plane to which the first direction X and the second direction Y belong. Further, unless otherwise defined, "overlapping" means overlapping in the third direction (Z) from the plane viewpoint.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a rear perspective view of a stamp 1 for forming a conductive pattern according to an embodiment of the present invention.

Referring to Figure 1, the stamp 1 according to the present embodiment includes a pressing surface 11 and a grip portion 20. The stamp 1 for forming a conductive pattern may be a stamp for forming a conductive pattern using a liquid metal. Specifically, the stamp 1 for forming a conductive pattern may be a stamp for forming a conductive pattern by applying pressure to the granulated liquid metal.

The pressing surface 11 may have a shape extending in the first direction X as a whole. In more detail, the pressing surface 11 may include a portion extending in the first direction X and a portion extending in the second direction Y. When a liquid metal conductive pattern is formed by using the conductive pattern forming stamp 1 according to the present embodiment, the formed conductive pattern may have a shape substantially corresponding to the planar shape of the pressing surface 11. For example, when the stamp 1 for forming a conductive pattern according to the present embodiment is used, a conductive pattern capable of functioning as a resistance element can be formed.

1 illustrates a case in which the pressing surface 11 has a shape extending substantially in the first direction X, but has a zigzag shape in the second direction Y, but the present invention is not limited thereto. In addition, the grip part 20 may have a shape extending in the third direction Z. The grip part 20 may mean a part for manipulating the stamp 1 for forming a conductive pattern. That is, a mechanical facility such as a person or a robot using the stamp 1 may align the pressing surface 11 to a desired position using the grip unit 20 and pressurize in the third direction Z. FIG. 1 illustrates a case in which the grip part 20 is located at one end and the other end in the first direction X, but the present invention is not limited thereto.

A method of forming a conductive pattern capable of functioning as a resistive element by using the conductive pattern forming stamp 1 according to the present embodiment will be described in detail later with reference to FIG. 13 and the like.

Hereinafter, a stamp for forming a conductive pattern according to another embodiment of the present invention will be described. However, the description of the content overlapping with the above-described conductive pattern forming stamp 1 will be omitted, and this will be clearly understood by those skilled in the art from the accompanying drawings.

2 is a rear perspective view of a stamp 2 for forming a conductive pattern according to another embodiment of the present invention. 3 is a cross-sectional view taken along line A-A' of FIG. 2.

2 and 3, the pressing surface 12 of the stamp 2 for forming a conductive pattern according to the present embodiment differs from the stamp 1 according to the embodiment of FIG. 1 in that it has a trench shape. .

In an exemplary embodiment, the pressing surface 12 may have a base surface 12a and one or more sidewalls 12b protruding from an edge of the base surface 12a in one side in the third direction Z. The top surface of the base surface 12a and the side surface of the sidewall 12b may form a trench together. The base surface 12a and the side wall 12b may apply pressure to the liquid metal particles granulated together.

Further, the width W ₁₂ of the base surface 12a may be greater than the height of the sidewall 12b, that is, the depth D _{12 of the} trench. Although the present invention is not limited thereto, for example, when pressure is applied to the liquid metal particles applied on the base substrate using the stamp 2, a liquid having a shape corresponding to the pressing surface 12 of the stamp 2 A metal conductive pattern may be formed. For example, liquid metal particles subjected to pressure are liquefied, and a conductive pattern may be formed. At this time, the liquefied liquid metal has a predetermined fluidity and can spread. Like the stamp (2) for forming a conductive pattern according to the present embodiment, the width (W ₁₂ ) of the base surface (12a) is larger than the height (D ₁₂ ) of the side wall (12b) to minimize the unintended flow of liquid metal. I can. That is, when the height (D ₁₂₎ of the side wall (12b) of the pressing surface 12 of the stamp (2) is greater than the width (W ₁₂₎ of the base surface (12a) prevents the moment when the liquid metal liquefied spread of the liquid metal It may not be possible and it may be difficult to form a fine pattern.

4 is a cross-sectional view of a stamp 3 for forming a conductive pattern according to another embodiment of the present invention, and is a cross-sectional view taken at a position corresponding to that of FIG. 3.

Referring to FIG. 4, the point that the end of the side wall 13b of the stamp 3 for forming a conductive pattern according to the present embodiment forms a tip or a tip is the stamp 2 according to the embodiment of FIG. 3 and the like. It's different. The width T ₁₃ of the end of the sidewall 13b may be about 1,000 μm or less, or about 500 μm or less, or about 300 μm or less.

In an exemplary embodiment, a side surface of the sidewall 13b of the pressing surface 13 of the stamp 3 may partially form an inclination. Accordingly, the width of the sidewall 13b in the second direction Y may change along the third direction Z. The inclination angle formed by the side of the sidewall 13b may be about 75 degrees or more, or about 76 degrees or more, or about 77 degrees or more, or about 78 degrees or more, or about 79 degrees or more, or about 80 degrees or more. The upper limit of the inclination angle may be about 85 degrees or less, or about 84 degrees or less, or about 83 degrees or less, or about 82 degrees or less, or about 81 degrees or less.

The conductive pattern may be formed by pressing the stamp 3 for forming a conductive pattern according to the present embodiment in the third direction Z. That is, the pressing surface 13 may pressurize the liquid metal particles in the third direction Z. In this case, the pressure is transmitted in the third direction (Z) more effectively than when the inner side of the side wall 13b is vertical by making the inner side of the sidewall 13b of the pressing surface 13 of the stamp 3 inclined. This could be possible. That is, the portion that transmits pressure to the liquid metal particles may include an upper surface of the base surface 13a, a side surface (inclined surface) of the sidewall 13b, and an upper surface of the sidewall 13b.

In addition, the trench of the pressing surface 13 of the stamp 3 can be filled with liquid metal particles, and the side wall 13b has a sufficient width in order to stably receive the liquid metal particles when a sufficient pressure is applied. It may be desirable to have. On the other hand, when the width T ₁₃ of the end portion of the side wall 13b is too large, it may be difficult to form a conductive pattern having a small width due to the space occupied by the side wall 13b.

In addition, it may not be preferable from the viewpoint of forming a fine pattern that the liquid metal particles subjected to pressure by the upper surface of the sidewall 13b are liquefied. That is, the portion that is pressed by the side surface of the base surface 13a and the sidewall 13b corresponds to the center of the conductive pattern, and the portion that is pressed by the top surface of the sidewall 13b corresponds to the edge of the conductive pattern. have. In this case, when the amount of liquefied due to pressure by the edge portion of the conductive pattern, that is, the upper surface of the sidewall 13b is excessive, the width of the conductive pattern may be too large due to the fluidity of the liquid metal. Furthermore, when the fluidity of the liquid metal is not controlled, an electrical short circuit may occur between adjacent conductive patterns.

As will be described later, when the average particle size of the liquid metal particles is about 100 nm to 300 nm, the width T ₁₃ of the end of the side wall 13b is formed to be about 1,000 μm or less so that the end of the side wall 13b forms a tip. It can be done, and there is an effect of producing a fine pattern accordingly.

5 is a cross-sectional view of a stamp 4 for forming a conductive pattern according to another embodiment of the present invention, and is a cross-sectional view taken at a position corresponding to that of FIG. 3.

5, the pressing surface 14 of the stamp 4 for forming a conductive pattern according to this embodiment further includes a protrusion 14c protruding from the base surface 14a. It is different from (3).

In an exemplary embodiment, the protrusion 14c may protrude in the third direction Z from an approximately central portion of the base surface 14a. The protrusion height H _14c (eg, the maximum height) of the protrusion _14c may be smaller than the height H _14b of the sidewall 14b. The end of the protrusion 14c in the third direction (Z) (the upper end based on FIG. 5) may form a tip or a tip like the end of the sidewall 14b. The width of the end portion of the protrusion 14c may be about 1,000 μm or less, or about 500 μm or less, or about 300 μm or less. In some embodiments, both sides of the protrusion 14c may be inclined surfaces.

Although not shown in the drawings, the protrusion 14c of the pressing surface 14 of the stamp 4 is a partition wall extending along the first direction, that is, the extending direction of the pressing surface 14 of the stamp 4 or the extending direction of the trench. It can be a shape.

As described above, a conductive pattern may be formed by pressing the stamp 4 in the third direction Z to liquefy the liquid metal particles. The conductive pattern formed using the stamp 4 may have a thickness at a center portion greater than a thickness at an edge portion. Therefore, the pressure may not be sufficiently transmitted to the inside (or inside) at the center of the conductive pattern. If the pressure is not sufficiently transferred to the inside of the conductive pattern using the liquid metal, liquid metal particles that are not liquefied may remain inside the conductive pattern and cause a local difference in resistance of the conductive pattern.

The stamp 4 according to the present embodiment may further include a protrusion 14c located at an approximately central portion of the pressing surface 14, so that pressure can be directly transmitted to the inside of the central portion of the conductive pattern having a relatively large thickness. . That is, the protrusion 14c has an advantage of penetrating into the inside of the liquid metal conductive pattern to transmit pressure therein, and forming a more uniform conductive pattern. In addition, by forming the side surface of the protrusion 14c as an inclined surface, the upper surface of the base surface 14a, the side surface (inclined surface) of the sidewall 14b, the upper surface of the protrusion 14c, and the side surface (inclined surface) of the protrusion 14c are used. Pressure transfer in the third direction Z can be effectively performed.

6 is a plan view of a stamp 5 for forming a conductive pattern according to another embodiment of the present invention.

Referring to FIG. 6, the stamp 5 for forming a conductive pattern according to the present embodiment has a shape that extends in a substantially first direction (X), but has a zigzag shape in a diagonal direction rather than in the second direction (Y). This is different from the stamp 1 according to the embodiment of FIG. 1 and the like.

When the stamp 5 for forming a conductive pattern according to the present embodiment is used, a conductive pattern capable of functioning as a resistance element can be formed. That is, a conductive pattern having characteristics corresponding thereto may be formed according to the difference in shape of the conductive pattern forming stamp 5.

Although not shown in the drawings, since the cross-sectional shape in a direction perpendicular to the extending direction of the conductive pattern forming stamp 5 has been described above with reference to FIGS. 3 to 5, a duplicate description will be omitted.

7 is a plan view of a stamp 6 for forming a conductive pattern according to another embodiment of the present invention.

Referring to FIG. 7, the stamp 6 for forming a conductive pattern according to the present exemplary embodiment is different from the stamp 1 according to the exemplary embodiment of FIG. 1 in that it has an approximately'S' curved portion.

In an exemplary embodiment, the pressing surface of the stamp 6 for forming a conductive pattern includes a portion extending in the first direction (X) and a portion extending in the second direction (Y), It can be a shape. 7 illustrates a case in which the pressing surface has an angled shape in a plane, but the present invention is not limited thereto.

When the liquid metal conductive pattern is formed using the stamp 6, the formed conductive pattern may have a shape substantially corresponding to the planar shape of the pressing surface. For example, when the stamp 6 for forming a conductive pattern according to the present embodiment is used, a conductive pattern capable of functioning as a capacitor element may be formed. Specifically, a conductive pattern for forming any one terminal of the capacitor device may be formed.

A method of forming a conductive pattern capable of functioning as a capacitor element using the conductive pattern forming stamp 6 according to the present embodiment will be described in detail later with reference to FIG. 28 and the like.

Although not shown in the drawings, since the cross-sectional shape in the direction perpendicular to the extending direction of the conductive pattern forming stamp 6 has been previously described with reference to FIGS. 3 to 5, overlapping descriptions are omitted.

8 is a plan view of a stamp 7 for forming a conductive pattern according to another embodiment of the present invention.

Referring to FIG. 8, the stamp 7 for forming a conductive pattern according to the present exemplary embodiment is different from the stamp 1 according to the exemplary embodiment of FIG. 1 in that it has a substantially spiral shape.

In an exemplary embodiment, the pressing surface of the stamp 7 for forming a conductive pattern includes a portion extending in the first direction (X) and a portion extending in the second direction (Y), and has an approximately spiral shape. Can have. 8 illustrates a case in which the pressing surface has an angled shape in a plane, but the present invention is not limited thereto.

When the liquid metal conductive pattern is formed using the stamp 7, the formed conductive pattern may have a shape substantially corresponding to the planar shape of the pressing surface. For example, when the stamp 7 for forming a conductive pattern according to the present exemplary embodiment is used, a conductive pattern capable of functioning as an inductor element may be formed. That is, when a current flows through a substantially spiral-shaped conductive pattern, induced electromotive force may be generated, and through this, the conductive pattern may function as an inductor.

The method of forming a conductive pattern capable of functioning as an inductor element using the stamp 7 for forming a conductive pattern according to the present embodiment is to function as a resistive element using the stamp 1 according to the embodiment of FIG. It may be substantially the same as the method of forming a possible conductive pattern.

Although not shown in the drawings, since the cross-sectional shape in a direction perpendicular to the extending direction of the conductive pattern forming stamp 7 has been previously described with reference to FIGS. 3 to 5, overlapping descriptions are omitted.

Hereinafter, a conductive pattern substrate according to embodiments of the present invention will be described with reference to FIGS. 9 to 12.

9 is a plan view of a conductive pattern substrate 101 according to an embodiment of the present invention. 10 is a cross-sectional view taken along line B-B' of FIG. 9.

9 and 10, the conductive pattern substrate 101 according to the present exemplary embodiment may include a base substrate 200 and a liquid metal conductive pattern 301 disposed on the base substrate 200. The conductive pattern 301 itself functions as a resistive element, and the conductive pattern substrate 101 may be a resistive element substrate.

The base substrate 200 may provide a space in which the conductive pattern 301 is disposed. The top surface of the base substrate 200 may be located in a plane to which the first direction X and the second direction Y belong. That is, the base substrate 200 may provide a planar space to which the first direction X and the second direction Y belong.

The material of the base substrate 200 is not particularly limited as long as it can stably support the conductive pattern 301, for example, flexibility, stretchability, foldable, and/or rollable ( It may be made of a material having rollable) properties. For a specific example, the base substrate 200 may be made of a polymer resin such as polydimethylsiloxane (PDMS), polyacrylate, and polyimide. For another example, the base substrate 200 may be made of a material such as paper. In this case, the base substrate 200 may have a predetermined liquid permeability.

A liquid metal conductive pattern 301 including a liquid metal may be disposed on the base substrate 200. That is, the conductive pattern 301 may be a liquid metal pattern. The liquid metal may be a liquid metal having a complex composition including gallium and indium, but the present invention is not limited thereto.

From a plan view, the conductive pattern 301 has a predetermined shape, and the conductive pattern 301 may exhibit unique characteristics due to the shape of the pattern. In an exemplary embodiment, the conductive pattern 301 has a shape extending in the first direction X as a whole, but has a zigzag shape in the second direction Y, and may itself function as a resistance element. Specifically, the conductive pattern 301 may include a portion extending in the first direction X and a portion extending in the second direction Y. The conductive pattern 301 according to the present embodiment may be manufactured using the stamp 1 for forming a conductive pattern according to the embodiment of FIG. 1 and the like. However, the present invention is not limited thereto, and in another embodiment, a conductive pattern functioning as a resistive element may be manufactured using the stamp 5 according to the embodiment of FIG. 6.

Although not shown in the drawings, one end and the other end of the first direction X of the conductive pattern 301 may be electrically connected to different components, such as an external electronic circuit or an electrical line. In this case, one end and the other end of the first direction X of the conductive pattern 301 may be partially expanded to form a contact pad part.

In an exemplary embodiment, the upper surface of the base substrate 200 may have a plurality of trenches 210 or grooves. The conductive pattern 301 may be disposed not to overlap with the trench 210 of the base substrate 200 in the third direction Z. When the trench 210 forms a recessed portion of the upper surface of the base substrate 200 and the upper surface of the base substrate 200 on which the trench 210 is not formed forms a protruding portion, the conductive pattern 301 Silver may be disposed only on the relatively protruding portion of the base substrate 200. As a non-limiting example, the conductive pattern 301 may contact a relatively protruding portion of the base substrate 200 and may not contact the trench 210.

The conductive pattern 301 made of a liquid metal can maintain a liquid state at room temperature. In this case, the shape of the conductive pattern 301 may be maintained by an interface tension or a surface tension between the base substrate 200 and the liquid metal. When the upper surface of the base substrate 200 has the trench 210 and the liquid metal conductive pattern 301 is disposed on the protruding portion formed by the trench 210, the liquid metal is formed by the boundary between the trench 210 and the protruding portion. The conductive pattern 301 does not spread further, and its shape or width can be maintained. As described above, the liquid metal conductive pattern 301 may maintain a liquid state at room temperature, and it may be difficult to form a conductive pattern having a small width or size due to its own fluidity. Like the conductive pattern substrate 101 according to the present embodiment, a trench may be formed in the base substrate 200 to physically control the spread of the conductive pattern 301.

In some embodiments, the maximum thickness T ₃₀₁ of the conductive pattern 301 may be greater than the maximum depth D ₂₁₀ of the trench 210. For example, the thickness T ₃₀₁ of the conductive pattern 301 may be about 3 times or more and 10 times or less, or about 4 times or more and 8 times or less of the depth D ₂₁₀ of the trench 210. When the thickness T ₃₀₁ of the conductive pattern 301 and the depth D ₂₁₀ of the trench 210 are within the above ranges, the liquid metal conductive pattern 301 having fluidity can stably maintain its shape. The depth of the trench ₍₂₁₀₎ (D 210) from about 3,000㎛ or less, or about 2,000㎛ or less, or about 1,500㎛ or less, or about 1,000㎛ or less, or about 500㎛ or less, or about 300㎛ or less, or about 100㎛ It can be below.

In addition, the base substrate 200 may be at least partially exposed through a space between adjacent conductive patterns 301. For example, the conductive pattern 301 includes a first portion extending in a second direction Y (ie, a portion represented in the cross-sectional view of FIG. 10 ), a second portion extending in the first direction X from the first portion, And a third portion (ie, a portion represented in the cross-sectional view of FIG. 10) extending in the second direction Y again from the second portion. In this case, the upper surface of the base substrate 200 may be exposed through a space between the first part and the third part.

In some embodiments, a separation distance between adjacent conductive patterns 301 in the first direction X may be smaller than a width of the conductive pattern 301 in the first direction X. As described above, the conductive pattern substrate 101 according to the present embodiment includes a trench 210 formed on the upper surface of the base substrate 200, and the conductive pattern 301 is prevented from spreading by the trench 210. I can. Therefore, there is an effect of forming a conductive pattern 301 having a very fine width.

The conductive pattern substrate 101 may further include a protective layer 400 disposed on the conductive pattern 301. The protective layer 400 may be disposed to contact both the liquid metal conductive pattern 301 and the base substrate 200. The protective layer 400 may protect the conductive pattern 301 maintaining a liquid state at room temperature. That is, the protective layer 400 may cover not only the top surface but also the side surfaces of the conductive pattern 301, and the protective layer 400 may be at least partially positioned between the conductive patterns 301 adjacent to each other. Further, the protective layer 400 may be in a state in which the trench 210 is at least partially filled. The material of the protective layer 400 is not particularly limited, but may be made of a polymer resin such as polydimethylsiloxane, polyacrylate, and polyimide.

As described above, although the conductive pattern substrate 101 according to the present embodiment uses the liquid metal conductive pattern 301 that maintains a liquid state at room temperature, its shape and spread can be easily controlled, and furthermore, the conductive pattern 301 Even when) is used as an electric line, it has the advantage of maintaining stable characteristics. In particular, even when an external impact is applied, the shape of the conductive pattern 301 is deformed, for example, an electrical short occurs between adjacent conductive patterns 301, or electrical opening occurs due to the destruction of the conductive pattern 301 line. It is possible to suppress the problem and to manufacture the conductive pattern substrate 101 having improved reliability and flexibility.

Hereinafter, a conductive pattern substrate according to another embodiment of the present invention will be described. However, redundant descriptions of configurations that are substantially the same or similar to those of the conductive pattern substrate 101 according to the exemplary embodiment described above will be omitted, and this may be clearly understood by those skilled in the art from the accompanying drawings. There will be.

11 is a plan view of a conductive pattern substrate 102 according to another embodiment of the present invention. 12 is a cross-sectional view taken along line C-C' of FIG. 11.

11 and 12, the conductive pattern substrate 102 according to the present embodiment includes a first liquid metal conductive pattern 310 and a second liquid metal conductive pattern 320 that are spaced apart from each other. The point to be formed is different from the conductive pattern substrate 101 according to the embodiment of FIG. 9 and the like. That is, the conductive pattern 302 itself functions as a capacitor device, and the conductive pattern substrate 102 may be a capacitor device substrate.

The first conductive pattern 310 and the second conductive pattern 320 may each include a liquid metal. That is, both the first conductive pattern 310 and the second conductive pattern 320 may be a liquid metal pattern. The first conductive pattern 310 and the second conductive pattern 320 may be electrically non-conductive with each other. The first conductive pattern 310 and the second conductive pattern 320 are formed of the same liquid metal composition, and may be substantially formed through one process. In addition, the first conductive pattern 310 and the second conductive pattern 320 may be positioned on substantially the same layer and may have substantially the same thickness T ₃₀₂ .

The capacitor element 11b may be configured to accumulate charged electric charges by using an electrostatic induction phenomenon. In this case, the first conductive pattern 310 and the second conductive pattern 320 may constitute one terminal and the other terminal of the capacitor device, respectively.

Specifically, in a plan view, the first conductive pattern 310 and the second conductive pattern 320 each have an approximately'S' shape and are spaced apart in the first direction (X) and the second direction (Y) at regular intervals. May be in the state. The conductive pattern 302 according to this embodiment may be manufactured using two stamps 6 for forming a conductive pattern according to the embodiment of FIG. 7. That is, the first conductive pattern 310 and the second conductive pattern 320 may be manufactured by using the stamp 6 for forming a conductive pattern, respectively.

In an exemplary embodiment, the first conductive pattern 310 includes a first portion 311 of a first pattern and a first portion 311 of the first pattern extending in the first direction X (a horizontal direction based on FIG. 11 ). ) From the second direction (Y) (vertical direction based on FIG. 11), the second portion 312 of the first pattern, and the second portion 312 of the first pattern, extending in the first direction (X) again. A third portion 313 of the first pattern may be included. In this embodiment, a case in which the first portion 311 of the first pattern and the third portion 313 of the first pattern extend in a direction parallel to each other (ie, the first direction (X)) is illustrated. The invention is not limited thereto.

Similarly, the second conductive pattern 320 extends in the second direction (Y) from the first portion 321 of the second pattern extending in the first direction (X) and the first portion 321 of the second pattern. A second portion 322 of the second pattern and a third portion 323 of the second pattern extending from the second portion 322 of the second pattern again in the first direction X may be included. The first portion 321 of the second pattern partially faces the first portion 311 of the first pattern in a second direction (Y), and the second portion 322 of the second pattern partially faces the first pattern The second part 312 of the side faces in the first direction (X), and the third part 323 of the second pattern partially faces the third part 313 of the first pattern in the second direction (Y) can do. In this embodiment, the first portion 321 of the second pattern and the third portion 323 of the second pattern extend in a direction parallel to each other (ie, the first direction (X)). The invention is not limited thereto.

In a plan view, the first portion 311 of the first pattern may be positioned between the first portion 321 of the second pattern and the third portion 323 of the second pattern. Also, in a plan view, the third portion 313 of the first pattern may be positioned between the first portion 311 of the first pattern and the third portion 323 of the second pattern.

In other words, the first to third portions 321, 322, and 323 of the second conductive pattern 320 have a portion recessed in one side (eg, right) in the first direction X, and the first conductive pattern ( The first to third portions 311, 312, and 313 of 310) have a portion protruding in the first direction (X) to one side (eg, right), and the protruding portion of the first conductive pattern 310 The second conductive pattern 320 may be inserted into a recessed portion. Through this, the face area between the first conductive pattern 310 and the second conductive pattern 320 can be increased, and the dielectric property of the portion between the first conductive pattern 310 and the second conductive pattern 320 can be increased. The first conductive pattern 310 and the second conductive pattern 320 may function as a capacitor device together.

Although not shown in the drawings, one end of the first conductive pattern 310 and the other end of the second conductive pattern 320 may be electrically connected to other external components, for example, an external electronic circuit or an electrical line. In this case, ends of the first conductive pattern 310 and the second conductive pattern 320 may be partially expanded to form a contact pad part.

The four conductive patterns represented in FIG. 12, that is, the first part 311 of the first pattern, the third part 313 of the first pattern, the first part 321 of the second pattern, and the second pattern Each of the three portions 323 is a portion extending in the first direction X, and may be portions disposed adjacent to each other in the second direction Y.

As described above, the upper surface of the base substrate 200 may have a plurality of trenches 210 or grooves. In this case, both the first conductive pattern 310 and the second conductive pattern 320 may be disposed so as not to overlap with the trench 210 in the third direction Z. As a non-limiting example, the first portion 311 of the first pattern, the third portion 313 of the first pattern, the first portion 321 of the second pattern, and the third portion 323 of the second pattern are The base substrate 200 may be in contact with a relatively protruding portion and may not be in contact with the trench 210. In some embodiments, as described above, the maximum thickness of the conductive pattern 302 is about 3 times or more and 10 times or less, or about 4 times or more and 8 times or less the maximum depth of the trench 210.

Also, the base substrate 200 may be at least partially exposed through a space between adjacent conductive patterns 302.

In an exemplary embodiment, the conductive pattern substrate 102 may further include a high dielectric layer disposed on the base substrate 200. The high dielectric layer 500 may directly contact the base substrate 200. The material of the high dielectric layer 500 is not particularly limited when it has a sufficient dielectric constant to implement a capacitor device, but for example, the high dielectric layer 500 may be made of a material having a higher dielectric constant than the protective layer 410. That is, the high-k layer 500 refers to a layer having a relatively high dielectric constant compared to the protective layer 410.

The high dielectric layer 500 is disposed on the base substrate 200, but is disposed only on a partial region of the base substrate 200, and the base substrate ( 200) may be exposed. As described above, when the first conductive pattern 310 and the second conductive pattern 320 including liquid metal together form a capacitor device and are disposed in an'S' shape, the first conductive pattern 310 It may function as a capacitor element by the dielectric constant of the spaced space between the and the second conductive pattern 320.

That is, between the first portion 311 of the first pattern and the first portion 321 of the second pattern, and between the third portion 313 of the first pattern and the third portion 323 of the second pattern It may be a part that accumulates. Although not shown as a cross-sectional view, between the second portion 312 of the first pattern and the second portion 322 of the second pattern may also be a portion in which electric charges are accumulated. On the other hand, the first portion 311 of the first pattern and the third portion 313 of the first pattern are arranged very adjacent to each other in the second direction (Y), but the first portion 311 of the first pattern and It is undesirable for charge to accumulate between the third portions 313 of the first pattern.

Accordingly, the conductive pattern substrate 102 according to the present exemplary embodiment has a region between the first conductive pattern 310 and the second conductive pattern 320, specifically, the first part 311 of the first pattern and the second pattern. A high-k layer 500 may be disposed between the first portion 321 and between the third portion 313 of the first pattern and the third portion 323 of the second pattern to maximize the function of the capacitor element. On the other hand, the protective layer 410 is positioned between the first portion 311 of the first pattern and the third portion 313 of the first pattern without disposing the high dielectric layer 500 so that the first conductive pattern 310 It is possible to minimize the electrical influence between adjacent parts of the.

In addition, the high-k layer 500 may function as a partition wall. That is, the high dielectric layer 500 may function as a partition wall layer. As described above, the liquid metal conductive pattern 302 has a problem in that an electric short between adjacent patterns occurs due to its own fluidity. Therefore, the high-k layer 500 disposed between the first conductive pattern 310 and the second conductive pattern 320 functions as a partition wall, so that the first conductive pattern 310 and the second conductive pattern 320 are not in contact. It also has a preventive effect.

In some embodiments, the maximum thickness T ₅₀₀ of the high dielectric layer 500 may be greater than the maximum thickness T ₃₀₂ of the conductive pattern 302. If less than the maximum thickness (T ₃₀₂₎ of the maximum thickness (T ₅₀₀₎ the conductive pattern 302 of the specific conductive layer 500, the side surface of the first conductive pattern 310 and second conductive pattern 320 which face each other, A difference may occur in the amount of charge accumulated according to the height in the third direction Z of. That is, by forming the high-k layer 500 to have a sufficient height, it is possible to prevent a phenomenon of non-uniformity of accumulated charge according to the position in the third direction Z. In addition, since the high-k layer 500 has a sufficient thickness, the first conductive pattern 310 may pass through the high-k layer 500 to contact the second conductive pattern 320 and prevent an electrical short from occurring.

Further, the high-k layer 500 may be disposed only on a relatively protruding portion of the base substrate 200 and may be disposed so as not to overlap the trench 210 in the third direction Z.

The protective layer 410 may be disposed to contact all of the liquid metal conductive pattern 302, the base substrate 200 and the high dielectric layer 500. The protective layer 410 may protect the conductive pattern 302 and the high dielectric layer 500. The protective layer 410 may be at least partially positioned between the conductive patterns 302 adjacent to each other and between the conductive pattern 302 and the high dielectric layer 500. In addition, the protective layer 410 may be in a state in which the trench 210 is at least partially filled.

Although the conductive pattern substrate 102 according to the present exemplary embodiment uses the liquid metal conductive pattern 302 that maintains a liquid state at room temperature, it is easy to control its shape and the like. In particular, by partially disposing a high dielectric layer 500 acting as a high dielectric material together with a partition function on the base substrate 200, the characteristics of the capacitor device can be improved, and the first conductive pattern 310 and the second conductive pattern ( 320) has the effect of preventing a short circuit.

Hereinafter, a method of manufacturing a conductive pattern substrate according to the present invention will be described. However, descriptions of components that are substantially the same as or corresponding to the above-described components will be omitted, and this will be clearly understood by those skilled in the art from the accompanying drawings.

13 is a flowchart illustrating a method of manufacturing a conductive pattern substrate according to an embodiment of the present invention. 14 is a flow chart showing in detail the step (S110) of granulating the liquid metal of FIG. 13.

First, referring to FIG. 13, the method of manufacturing a conductive pattern substrate according to the present embodiment includes forming metal oxide particles, that is, liquid metal-oxide nanoparticles (S110), and applying liquid metal oxide nanoparticles on the base substrate. Including the step (S120), the step of pressing the stamp on the nanoparticle layer (S130), the step of removing the residual nanoparticles (S140) and the step of removing the stamp (S160), forming a protective layer (S170) It may further include.

Further referring to FIG. 14, the step of forming a liquid metal-oxide nanoparticle (S110) includes mixing a liquid metal with an alcohol solution (S101), and forming nanoparticles by ultrasonicating the mixture (S103). And extracting the suspended nanoparticles (S104), and mixing the metal particles with the alcohol solution (S102).

Hereinafter, the step of granulating the liquid metal (S110) according to the present invention will be described in more detail with reference to FIGS. 15 to 18.

15 to 17 are views for explaining the step (S110) of granulating the liquid metal of FIG. 14.

First, referring to FIGS. 13 to 15, an alcohol solution 910 is prepared and a liquid metal 920 is mixed (S101). The type of the alcohol solution 910 is not particularly limited, but may include methanol or ethanol. In an initial state in which the liquid metal 920 is mixed with the alcohol solution 910, the liquid metal 920 may not be dispersed and may maintain a lump state.

In some embodiments, the step of mixing the metal particles 930 with the alcohol solution 910 (S102) may be further included. The metal particles 930 may be metal particles having a solid state at room temperature. The type of the metal particles 930 is not particularly limited, but, for example, copper (Cu), aluminum (Al), titanium (Ti), gold (Au), silver (Ag), or an alloy thereof, or an oxide thereof Alternatively, nitrides or the like can be used.

The metal particles 930 may increase energy transferred to the liquid metal 920 in the subsequent ultrasonic treatment step (S103). In an exemplary embodiment, the average particle size of the metal particles 930 may be about 100 nm to 400 nm, or about 250 nm to 300 nm. The present inventors mixed the liquid metal 920 in the alcohol solution 910 and further mixed the metal particles 930 having an average particle size of about 100 nm to 400 nm to have an easy particle size to form a conductive pattern using liquid metal. It has been studied that liquid metal oxide nanoparticles can be formed and the present invention has been completed.

That is, when the metal particles 930 are further mixed, liquid metal oxide nanoparticles having a smaller size and uniform particle size may be formed compared to the case where the metal particles 930 are further mixed. In this respect, the particle size of the metal particles 930 is preferably about 100 nm to 400 nm. For example, when the particle size of the metal particles 930 exceeds 400 nm, the size of the liquid metal oxide nanoparticles is very non-uniform, so that the yield may decrease.

Subsequently, referring to FIG. 16 further, the mixture of the alcohol solution 910, the liquid metal 920, and the metal particles 930 is subjected to ultrasonic treatment using an ultrasonic device S to form metal oxide particles OP of the liquid metal. Do (S103). The metal oxide particles OP of the liquid metal will be described later together with FIG. 18. In this step (S103), the metal oxide particles OP and the metal particles 930 may be dispersed in a medium to form a dispersion.

Subsequently, referring to FIG. 17 further, a suspension is obtained or extracted by precipitating the formed dispersion (S104). Specifically, in the dispersion, the metal particles 930 and the metal oxide particles OP having a relatively large particle size are precipitated and may be obtained as a precipitate 960 in the form of a slurry. On the other hand, the metal oxide particles OP having a relatively small particle size, for example, the metal oxide particles OP having a size of about 100 nm to 300 nm, may remain in a suspended state and exist in a state of the supernatant 970. Although not shown in the drawings, the extracted metal oxide particles OP may be dried and powdered. In some embodiments, the step of obtaining the float (S104) may be performed through centrifugation or the like.

18 is a schematic diagram showing the granulated liquid metal OP.

Referring further to FIG. 18, the metal oxide particles OP prepared according to the present embodiment may be liquid metal-oxide nanoparticles in which a liquid metal is encapsulated by an oxide film on the surface. In other words, the metal oxide particles OP may be metal oxide particles in a state in which a liquid metal droplet maintaining a liquid state at room temperature is located in a central portion, and an oxide film surrounding the liquid metal droplet is formed. The metal oxide particles OP may be formed by oxidizing the surface of the liquid metal 920 by reacting with an alcohol group, but the present invention is not limited thereto.

As described above, according to the liquid metal particleization method according to the present embodiment, a metal oxide including a liquid metal droplet LM that maintains a liquid state therein and an oxide film OL surrounding the liquid metal droplet LM Particles (OP) can be prepared. In addition, energy transmitted to the liquid metal may be increased by mixing the metal particles 930 with the alcohol solution. In particular, by using the metal particles 930 having a size of 400 nm or less, the size of the prepared liquid metal oxide particles (OP) can be controlled, and the specific gravity of the metal oxide particles (OP) having a relatively large size can be reduced. I can.

In addition, since the liquid state is maintained at room temperature, free handling is difficult, and the present invention is not limited thereto. However, according to the prior art, it is difficult to form a conductive pattern using liquid metal other than the method of injecting liquid metal into the trench. there was. However, in the case of the present embodiment, a solid oxide film is formed on the surface and is relatively easy to handle, but the liquid metal therein can form metal oxide particles OP of liquid metal that maintain a liquid state, and metal oxide particles There is an effect of being able to form a conductive pattern as described later by using (OP).

Hereinafter, a method of manufacturing a conductive pattern substrate according to the present invention will be described in more detail with reference to FIGS. 19 to 27.

19 to 27 are views for explaining a method of manufacturing the conductive pattern substrate of FIG. 13.

Specifically, FIG. 19 is a perspective view showing a step S120 of applying a metal particle oxide, and FIG. 20 is a cross-sectional view of FIG. 19 taken along a first direction X.

In addition, FIG. 21 is a perspective view showing a step S130 of forming a conductive pattern using a stamp, and FIG. 22 is a cross-sectional view taken along line DD′ of FIG. 21, in a first direction to show three conductive patterns ( It is a cross-sectional view taken along X).

In addition, FIG. 23 is a perspective view showing a step of removing residual metal oxide particles (S140), and FIG. 24 is a cross-sectional view of FIG. 23 and showing a location corresponding to FIG.

Further, FIG. 25 is a perspective view showing a step of removing the stamp (S160), and FIG. 26 is a cross-sectional view of FIG. 25 and showing a position corresponding to FIG. 22.

In addition, FIG. 27 is a cross-sectional view showing a step of forming a protective layer (S170), and a cross-sectional view showing a position corresponding to FIG. 22.

First, referring to FIGS. 13 to 20, a metal oxide particle layer 600 is formed by applying liquid metal oxide particles, that is, metal oxide particles OP, on the base substrate 201 (S120). The metal oxide particles OP may be prepared according to the liquid metal particle method according to the embodiment of FIG. 14. For example, the metal oxide particles OP may be applied or coated on the base substrate 201 in a dried powder state. The metal oxide particles OP may be applied on substantially the entire surface of the base substrate 201.

The metal oxide particles OP may have an average particle size of about 100 nm to 300 nm. When the particle size of the metal oxide particles (OP) exceeds 300 nm, as will be described later, when forming a conductive pattern by momentarily applying pressure to the metal oxide particles (OP) using a stamp, it is difficult to form a conductive pattern having a fine width. I can lose. That is, when the metal oxide particles OP are liquefied, fluidity may occur, and due to the fluidity, a problem such as an electric short between adjacent patterns may occur.

Therefore, for the method of manufacturing the conductive pattern substrate according to the present embodiment, the particle size of the metal oxide particles (OP) needs to be 300 nm or less, and accordingly, the particle size of the metal oxide particles (OP) is controlled by mixing the metal particles in an alcohol solution. need.

Subsequently, further referring to FIGS. 21 and 22, a conductive pattern 301 is formed by pressing the stamp 4 on the metal oxide particle layer 610 (S130 ). 21 and 22 illustrate a case of using the stamp 4 having a cross-section according to FIG. 5, but the present invention is not limited thereto.

As described above with reference to FIG. 5, the pressing surface 14 of the stamp 4 has a trench, but the end of the side wall 14b may form a tip. In addition, the base surface 14a of the pressing surface 14 may include a protrusion 14c protruding from an approximately central portion. The end of the sidewall 14b of the pressing surface 14 of the stamp 4 according to the present embodiment may form a tip having a width of about 1,000 μm or less, or about 500 μm or less, or about 300 μm or less. I can. In particular, when the average particle size of the metal oxide particles OP is about 100 nm to 300 nm, the end of the sidewall 14b may have a width within the above range, thereby forming the conductive pattern 301 with improved precision.

At least some of the metal oxide particles OP in the metal oxide particle layer 610 are pressured by the inner wall of the side wall 14b of the stamp 4, the base surface 14a, and the top and inclined sides of the protrusion 14c. You can receive it. In this case, the metal oxide particles OP, which are pressed by the stamp 4, destroy the oxide film on the outer surface, and the liquid metal inside may be eluted. That is, the metal oxide particles OP received pressure by the stamp 4 may be liquefied. In a state where the stamp 4 is disposed on the base substrate 200, the liquefied portion may be kept trapped by the upper surface of the base substrate 200 and the pressing surface 14 of the stamp 4. The liquefied portion may later remain as a conductive pattern 301 having conductivity.

On the other hand, the portion of the metal oxide particle layer 610 that does not overlap with the stamp 4, that is, the metal oxide particle layer 610 that is not directly pressed by the stamp 4 may exist in the state of the metal oxide particles OP. Accordingly, metal oxide particles OP may be interposed between portions of the adjacent stamp 4.

In particular, since the stamp 4 includes the protrusion 14c, sufficient pressure can be transmitted to the inner region of the central portion of the conductive pattern 301. Through this, it is possible to minimize the remaining metal oxide particles OP that have not been liquefied in the conductive pattern 301 and form the conductive pattern 301 having uniform characteristics.

In an exemplary embodiment, a trench 210 may be formed on the upper surface of the base substrate 200. That is, in the step S130 of forming the conductive pattern 301 including the liquid metal, the trench 210 may be formed in the base substrate 200.

Subsequently, referring to FIGS. 23 and 24 further, residual metal oxide particles that have not been liquefied are removed (S140). That is, metal oxide particles that are not covered by the stamp 4 and remain between portions of the adjacent stamp 4 are removed. After the metal oxide particles are removed, the upper surface of the base substrate 200 may be partially exposed. The step of removing the residual metal oxide particles (S140) may be performed through a blowing process or an ultrasonic treatment process, but the present invention is not limited thereto.

In this step (S140), the stamp 4 is still in close contact with the base substrate 200, and the liquefied conductive pattern 301 is formed by the upper surface of the base substrate 200 and the pressing surface of the stamp 4 You can stay trapped.

Subsequently, referring to FIGS. 25 and 26 further, the stamp disposed on the base substrate 200 is removed (S160). Through this, a liquid metal conductive pattern 301 disposed on the base substrate 200, that is, a liquid metal pattern may be formed. Further, the trench 210 formed on the upper surface of the base substrate 200 may be exposed.

Although not shown in the drawings, the side surface of the conductive pattern 301 may have a reverse slope due to an interface tension or a surface tension between the liquid metal and the base substrate 200. In addition, as described above, the conductive pattern 301 and the trench 210 do not overlap. Due to the boundary between the trench 210 and the protruding surface on which the liquid metal conductive pattern 301 is disposed, the conductive pattern 301 can maintain its shape even though it has fluidity.

Subsequently, referring to FIG. 27 further, the protective layer 400 is formed to contact the conductive pattern 301 and the base substrate 200 (S170). The method of forming the protective layer 400 is not particularly limited, but may be formed through, for example, a coating method. Since the protective layer 400 has been described with reference to FIG. 10 and the like, overlapping descriptions are omitted.

According to the method of manufacturing a conductive pattern substrate according to the present exemplary embodiment, various types of liquid metal conductive patterns 301 may be formed by changing the shape of the stamp, specifically, the shape of the pressing surface of the stamp. In addition, there is an advantage in that it is easy to repeatedly form the conductive pattern 301 or extend the electric line through a repeating process.

In the above, the method of manufacturing the conductive pattern substrate has been described using the conductive pattern substrate according to FIGS. 9 and 10 as an example, but the present invention is not limited thereto. Hereinafter, a method of manufacturing a conductive pattern substrate according to another embodiment of the present invention will be described using the conductive pattern substrate according to FIGS. 11 and 12 as an example.

28 is a flowchart illustrating a method of manufacturing a conductive pattern substrate according to another embodiment of the present invention.

FIG. 29 is a perspective view showing a step (S230) of forming a conductive pattern using the stamp of FIG. 28, and FIG. 30 is a cross-sectional view taken along line EE′ of FIG. 29, showing a second conductive pattern showing four adjacent conductive patterns. It is a cross-sectional view taken along the direction Y.

In addition, FIG. 31 is a cross-sectional view illustrating a step of removing residual metal oxide particles (S240), and a cross-sectional view showing a position corresponding to FIG. 30.

Also, FIG. 32 is a cross-sectional view illustrating a step S250 of forming a high dielectric layer, and a cross-sectional view illustrating a location corresponding to that of FIG. 30.

Further, FIG. 33 is a cross-sectional view showing a step of removing the stamp (S260), and is a cross-sectional view showing a position corresponding to FIG. 30.

In addition, FIG. 34 is a cross-sectional view showing a step of forming a protective layer (S270), and a cross-sectional view showing a position corresponding to FIG. 30.

First, referring to FIG. 28, the method of manufacturing a conductive pattern substrate according to the present embodiment includes forming metal oxide particles, that is, liquid metal-oxide nanoparticles (S210), and applying liquid metal oxide nanoparticles on the base substrate. Including the step (S220), the step of pressing the stamp on the nanoparticle layer (S230), the step of removing the remaining nanoparticles (S240), the step of removing the stamp (S160), and the step of forming a protective layer (S170), The point of further including the step of forming a high-k layer (S250) is different from the method of manufacturing the conductive pattern substrate according to the embodiment of FIG. 13.

The step of forming the liquid metal-oxide nanoparticles (S210) and the step of applying the oxide nanoparticles of the liquid metal on the base substrate (S220) are substantially the same as those of the above-described embodiment, and a duplicate description will be omitted.

Next, referring to FIGS. 29 and 30 further, a conductive pattern 302 is formed by pressing the stamps 6a and 6b on the metal oxide particle layer 620 (S230). 29 and 30 illustrate a case in which two stamps 6a and 6b according to FIG. 7 are used, but the present invention is not limited thereto. Further, the stamps 6a and 6b may have a cross-sectional shape as described above with reference to FIG. 5.

At least some of the metal oxide particles OP in the metal oxide particle layer 620 may receive pressure through the inner wall, the base surface, and the top and inclined sides of the sidewall of the first stamp 6a. Through this, in the metal oxide particles OP, which are pressed by the first stamp 6a, the oxide film on the outer surface is destroyed, and the liquid metal inside is eluted and liquefied, thereby forming the first conductive pattern 310.

Likewise, in the metal oxide particles OP, which are pressed by the second stamp 6b, the oxide film on the outer surface is destroyed, the liquid metal inside is eluted, liquefied, and the second conductive pattern 320 may be formed. Pressurization by the first stamp 6a and pressurization by the second stamp 6b may be performed simultaneously or sequentially. The first conductive pattern 310 and the second conductive pattern 320 are spaced apart from each other and may be electrically non-conductive.

Specifically, the first conductive pattern 310 extends in the second direction (Y) from the first portion 311 of the first pattern extending in the first direction (X) and the first portion 311 of the first pattern The second portion of the first pattern and a third portion 313 of the first pattern extending in the first direction X from the second portion of the first pattern may be included. In this embodiment, a case in which the first portion 311 of the first pattern and the third portion 313 of the first pattern extend in a direction parallel to each other (ie, the first direction (X)) is illustrated. The invention is not limited thereto.

Similarly, the second conductive pattern 320 extends in the second direction (Y) from the first portion 321 of the second pattern extending in the first direction (X) and the first portion 321 of the second pattern. A second portion of the second pattern and a third portion 323 of the second pattern extending in the first direction X again from the second portion of the second pattern may be included.

The first portion 321 of the second pattern partially faces the first portion 311 of the first pattern in a second direction (Y), and the second portion of the second pattern partially faces the second portion of the first pattern. The portion may face the portion in the first direction X, and the third portion 323 of the second pattern may partially face the third portion 313 of the first pattern in the second direction Y. In this embodiment, the first portion 321 of the second pattern and the third portion 323 of the second pattern extend in a direction parallel to each other (ie, the first direction (X)). The invention is not limited thereto.

In a plan view, the first portion 311 of the first pattern may be positioned between the first portion 321 of the second pattern and the third portion 323 of the second pattern. Also, in a plan view, the third portion 313 of the first pattern may be positioned between the first portion 311 of the first pattern and the third portion 323 of the second pattern.

The four conductive patterns shown in FIG. 30, namely, the first part 311 of the first pattern, the third part 313 of the first pattern, the first part 321 of the second pattern, and the second pattern Each of the three portions 323 is a portion extending in the first direction X, and may be portions disposed adjacent to each other in the second direction Y.

On the other hand, the portion of the metal oxide particle layer 620 that does not overlap with the stamps 6a and 6b, that is, the metal oxide particle layer 620 that is not directly pressed by the stamps 6a and 6b, exists in the state of the metal oxide particles OP. I can. In an exemplary embodiment, trenches 210 may be formed on the upper surface of the base substrate 200 by the first stamp 6a and the second stamp 6b.

Subsequently, referring to FIG. 31 further, residual metal oxide particles that have not been liquefied are removed (S240). That is, the metal oxide particles remaining between the adjacent portion of the first stamp 6a and the portion of the first stamp 6a and between the first stamp 6a and the second stamp 6b are removed. After the metal oxide particles are removed, the upper surface of the base substrate 200 may be partially exposed. The step of removing the residual metal oxide particles (S240) may be performed through a blowing process or an ultrasonic treatment process, but the present invention is not limited thereto.

In this step (S240), the first stamp 6a and the second stamp 6b are still in close contact with the base substrate 200, and the liquefied conductive pattern 302 is formed with the upper surface of the base substrate 200. The trapped state can be maintained by the pressing surfaces of the stamps 6a and 6b.

Subsequently, referring to FIG. 32 further, a high dielectric layer 500 is formed on the base substrate 200 (S250). The high dielectric layer 500 is disposed on the base substrate 200, but is disposed only on a partial region of the base substrate 200, and the base substrate ( 200) may be exposed. When the conductive pattern 302 functions as a capacitor device, between the first portion 311 and the first portion 321 of the second pattern and the third portion 313 and the second pattern of the first pattern Between the third portions 323 of the may be portions in which electric charges are accumulated. On the other hand, the first portion 311 of the first pattern and the third portion 313 of the first pattern are arranged very adjacent to each other in the second direction (Y), but the first portion 311 of the first pattern and It is undesirable for charge to accumulate between the third portions 313 of the first pattern.

Therefore, the high-k layer 500 is not formed between the portion of the first stamp 6a and the portion of the first stamp 6a, and only the portion between the first stamp 6a and the second stamp 6b. 500) can be formed to maximize the function of the capacitor element.

The method of forming the high dielectric layer 500 is not particularly limited, but may be formed by, for example, filling or coating a high dielectric constant material in the spaced space between the first stamp 6a and the second stamp 6b and drying it. . In this step (S250), the side surface of the high dielectric layer 500 has an inclination, and the side surface of the high dielectric layer 500 may be partially spaced apart from the first stamp 6a and/or the second stamp 6b.

Subsequently, referring to FIG. 33 further, the stamp disposed on the base substrate 200 is removed (S260). Through this, a liquid metal conductive pattern 302 disposed on the base substrate 200, that is, a liquid metal pattern may be formed. Since the positional relationship between the conductive pattern 302 and the high-k layer 500 and the trench 210 has been previously described, overlapping descriptions will be omitted.

Subsequently, referring to FIG. 34 further, a protective layer 410 is formed so as to contact the conductive pattern 302, the high dielectric layer 500, and the base substrate 200 (S270 ). The method of forming the protective layer 410 is not particularly limited, but may be formed through, for example, a coating method.

Hereinafter, the present invention will be described in more detail with reference to experimental examples.

[Experimental Example 1]

The liquid metal-oxide nanoparticles prepared according to the method of FIGS. 15 to 17 were coated on the polydimethylsiloxane substrate. Then, a layer of liquid metal-oxide nanoparticles was scratched in a straight line with an iron pin, that is, a micro-probe tip. This was performed multiple times and each image is shown in FIGS. 35 and 36.

Then, the remaining liquid metal-oxide nanoparticles were removed using wind, and the resistance of the remaining liquid metal conductive line was measured. As a result, it was confirmed that the resistance value was close to zero.

That is, it was confirmed that a liquid metal pattern can be formed when a liquid metal is encapsulated with an oxide film to form particles and a pressure is applied to the granulated liquid metal nanoparticles. In addition, it was confirmed that it can be applied as a conductive pattern because it has no resistance.

[Experimental Example 2]

The liquid metal-oxide nanoparticles prepared according to the method of FIGS. 15 to 17 were coated on the polydimethylsiloxane substrate. Then, the liquid metal-oxide nanoparticle layer was pressed using a bar-shaped stamp having a width of about 150 μm. This was performed multiple times and each image is shown in FIGS. 37 and 38.

Then, the remaining liquid metal-oxide nanoparticles were removed using wind, and the resistance of the remaining liquid metal conductive line was measured. As a result, it was confirmed that the resistance value was close to zero.

The embodiments of the present invention have been described above, but these are only examples and do not limit the present invention, and those of ordinary skill in the field to which the present invention pertains should not depart from the essential characteristics of the embodiments of the present invention. It will be appreciated that various modifications and applications not illustrated above are possible. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

1: Stamp for conductive pattern formation
11: pressing surface
20: grip
200: base substrate
210: trench
301: liquid metal pattern
400: protective layer

Claims (1)

A method of patterning liquid metal by applying oxide particles of liquid metal on a substrate and pressing with a stamp.

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