KR20200088065A - Flexible substrate and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a flexible substrate and a method of manufacturing the same. The method of manufacturing a flexible substrate according to an exemplary embodiment includes: a step of placing a flexible substrate on a substrate holder in a chamber; a step of forming a planarization layer by performing a deposition process on the flexible substrate; and a step of attaching a functional film on the planarization layer, wherein the step of forming the planarization layer can perform an etching process.

Description

Flexible substrate and manufacturing method therefor{FLEXIBLE SUBSTRATE AND MANUFACTURING METHOD THEREOF}

The present invention relates to a flexible substrate and a method for manufacturing the same.

In general, a flexible display panel is manufactured based on a plastic film material. At this time, due to the manufacturing characteristics of the plastic film used, there is a limit to lowering the surface roughness below a certain level.

In order to solve these limitations, conventionally, a solution-like material was applied on a plastic film, and a flattening operation was performed through a heat treatment process or an ultraviolet (UV) curing process. However, this curing process not only takes a lot of time, but also causes a bubble phenomenon during the curing process to form a non-uniform planarization film, resulting in a problem that the thickness of the planarization film reaches several tens of μm.

Accordingly, there is a need for a manufacturing method capable of improving the surface roughness of a plastic film without requiring separate curing conditions.

An embodiment relates to a method of manufacturing a plastic film capable of improving surface roughness by forming a planarization film through a thin film deposition process that simultaneously involves deposition and etching on a plastic film.

The technical problem to be solved in the embodiment is not limited to the technical problem mentioned above, and another technical problem not mentioned will be clearly understood by a person having ordinary knowledge in the technical field to which the present invention belongs from the following description. Will be able to.

An embodiment may include placing a flexible substrate on a substrate rest inside a chamber; Forming a planarization layer by performing a deposition process on the flexible substrate; And attaching a functional film on the planarization layer. The step of forming the planarization layer may include an etching process, and may provide a method of manufacturing a flexible substrate.

The flexible substrate may be made of a polymer-based polymer synthetic resin material.

The forming of the planarization layer may further include supplying a first gas and a second gas into the chamber, and the planarization layer may be a silicon oxide film or a metal oxide film.

The first gas may include a silicon-based or metal-based gas, and the second gas may include oxygen (O2) or nitrogen (N2) gas.

The flow rate ratio of the second gas to the first gas may be 0.5 to 5.0.

In addition, the method of manufacturing the flexible substrate may further include applying a bias power to the substrate rest.

In the forming of the planarization layer, the etching speed may be controlled by varying the bias power applied to the substrate rest.

The surface roughness of the planarization layer may be 0.1 nm to 10 nm, and the thickness of the planarization layer may be 75 nm to 500 nm.

According to at least one embodiment of the present invention, while performing a deposition and etching process on the plastic film at the same time to form a planarization film at a level of tens of nm to hundreds of nm, the effect of improving the surface roughness of the plastic film while shortening the time required for the planarization film Provides

In addition, as the thickness of the planarization film is lowered to about 1/10 of the previous level, bending the flexible display panel in various forms-for example, a freely bendable bendable, rollable rollable like paper. It is possible to (Rollable), foldable, etc. that can be completely folded in half, and it is possible to obtain an effect of preventing cracks and damages by minimizing the stress concentrated on the display element.

The effects obtained in this embodiment are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description. .

1 is a cross-sectional view schematically showing the configuration of a High Density Plasma Chemical Vapor Deposition (HDP-CVD) apparatus.
2A to 2C are process cross-sectional views illustrating a method of planarizing a flexible substrate having a predetermined surface roughness according to an embodiment of the present invention.
3 is a process flow chart showing a method of manufacturing a flexible substrate according to an embodiment of the present invention.
4 is a cross-sectional view of a flexible substrate manufactured using the planarization method illustrated in FIGS. 2 to 3.
5 is an AFM measurement photograph measuring the surface roughness of a flexible substrate having a general flexible substrate and a planarization layer according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention capable of specifically realizing the above object will be described in detail. The embodiment may be variously changed and may have various forms, and specific embodiments will be illustrated in the drawings and described in detail in the text.

Terms such as "first", "second", etc. can be used to describe various components, but these components should not be limited by the terms. In addition, relational terms, such as "top/top/top" and "bottom/bottom/bottom" as used hereinafter, do not necessarily require or imply any physical or logical relationship or order between such entities or elements, It can also be used to distinguish one entity or element from another.

Terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

Hereinafter, a flexible substrate according to an embodiment and a manufacturing method thereof will be described with reference to the accompanying drawings.

1 is a cross-sectional view schematically showing the configuration of a High Density Plasma Chemical Vapor Deposition (HDP-CVD) apparatus 10.

Referring to FIG. 1, the high-density plasma chemical vapor deposition apparatus 10 includes a chamber 11 forming a constant reaction space, a substrate holder 12 installed inside the chamber 11 and on which a flexible substrate 110 is placed. ), may be installed around the chamber 11 and may include at least one gas inlet 13 for injecting process gas and/or etching gas into the reaction space.

The chamber 11 is composed of a chamber body 11a and an insulating dome 11b coupled to the upper end of the chamber body 11a, and the inside of the chamber 11 may be formed with a vacuum. An RF antenna 14 serving as a plasma generator is installed on the insulating dome 11b, and the RF antenna 14 is connected to a source RF power source 15.

A bias RF power supply 17 for controlling the energy of ions incident on the flexible substrate 110 is connected to the substrate rest 12, and impedances are matched at the front ends of the source RF power supply 15 and the bias RF power supply 17. A source matching circuit 16 and a bias matching circuit 18 are provided respectively.

Hereinafter, a process of planarizing the surface of the flexible substrate 110 using the above-described high-density plasma chemical vapor deposition apparatus 10 will be described with reference to FIG. 2.

2A to 2C are process cross-sectional views illustrating a method of planarizing a flexible substrate having a predetermined surface roughness according to an embodiment of the present invention.

Referring to FIG. 2A, first loading a flexible substrate 110 to perform a planarization process into the interior of the chamber 11, and then placing the flexible substrate 110 on the substrate holder 12. Can be performed.

The flexible substrate 110 has a predetermined surface roughness, and may be made of a polymer-based polymer synthetic resin material. For example, the polymer synthetic resin material may include at least one of polyimide, polyester, polyacrylic, polyepoxy, polyethylene, polypropylene, and polystyrene. In addition, the flexible substrate 110 may be a single layer or a multi-layer in which two or more layers are stacked.

At this time, the surface of the flexible substrate 110 may have a surface roughness in which the size of the protrusion 111 reaches approximately tens to hundreds of nm. As the surface roughness of the flexible substrate 110 increases, stress is concentrated on the protrusion 111 and cracks are easily generated, and an organic light-emitting diode (OLED) stacked on the flexible substrate 110 is formed. This will cause defects in the device. In order to solve this problem, a planarization operation capable of improving the surface roughness of the flexible substrate 110 is performed as follows.

Referring to FIG. 2B, a source RF power source 15 is applied to the RF antenna 14 to generate a plasma in a reaction space above the substrate rest 12, and the chamber 11 through the gas inlet 13 ) The step of supplying the first gas and the second gas to the inside may be performed.

According to one embodiment, the gas inlet 13 may supply a mixed gas in which the first gas and the second gas are mixed.

Or according to another embodiment, the gas inlet 13 includes at least one first and second gas inlets 13a, 13b, and the first gas inlet 13a and the second gas inlet 13b are each independently Alternatively, the first gas and the second gas may be supplied. At this time, the first gas and the second gas may be supplied simultaneously, or may be supplied separately at predetermined time intervals, and the first and second supplied through the first and second gas inlets 13a and 13b. The gas can be mixed inside the chamber 11.

The first gas may include at least one of a silicon-based gas and a metal-based gas. For example, the silicon-based gas includes at least one of SiH ₄ (silane), Si ₂ H ₆ (disilane), DCS (Dichlorosilane), TCS (Trichlorosilane), and HCD (Hexachlorodisilane). Al, Ge, Sr, Hf, Yt, Zr, Ta, La, and may include at least one of Ti, but the scope of the present invention is not necessarily limited thereto.

The second gas may include at least one of oxygen (O ₂ ) gas and nitrogen (N ₂ ) gas.

At this time, the first gas and the second gas in the plasma may be converted into ions or active species due to collision with electrons.

Then, while the first gas and the second gas are injected through the gas inlet 13 to the upper portion of the substrate rest 12, a bias RF power supply 17 is executed to bias the substrate rest 12. The step of applying power may be performed.

When bias power is applied to the substrate rest 12, some active species of the second gas react with silicon atoms (si) or metal atoms of the first gas to participate in the deposition process, and some of the ions are bias RF power ( 17) is accelerated in the direction of the substrate holder (12) can be involved in the etching process.

On the other hand, while forming the planarization layer 120 to be described later, the supply amount of the mixed gas may be kept constant. For example, the first gas (e.g., SiH ₄₎ compared to the second gas (e.g., O ₂₎ flow rate ratio (e.g., O ₂ / SiH ₄₎ may be in the 0.5 to 5.0, more preferably, the second gas ( For example, when the supply ratio of O ₂ ) and the first gas (eg, SiH ₄ ) is 2.0, the planarization layer 120 with improved surface roughness may be formed.

Referring to (a) to (b) of FIG. 2C, the deposition and etching processes are simultaneously performed using the first and second gases converted to ions or active species on the flexible substrate 110 to planarize a predetermined thickness. The step of forming a layer can be performed.

After the first gas and the second gas are converted into ions or active species due to collision with electrons, deposition and etching are simultaneously performed on the surface of the flexible substrate 110, and overall, the deposition rate is faster than the etching rate. Therefore, the deposition process proceeds to a predetermined thickness.

At this time, the deposition process is mainly performed by active species, and the etching process is mainly performed by ions or electrons of the second gas accelerated by the bias RF power supply 17.

As described above, the reason why deposition and etching are simultaneously performed is that when performing only the deposition process, the dielectric layers 120a and 120b formed by reacting silicon atoms (Si) of the first gas or metal atoms and some active species of the second gas react. This is because the surface roughness of the flexible substrate 110 is deposited while being maintained, and thus an effect of improving the surface roughness cannot be obtained.

Accordingly, while performing the deposition process of the dielectric films 120a and 120b, the ions of the second gas are accelerated to maintain the etch rate in the vicinity of the protrusion 111 of the flexible substrate 110, thereby depositing it on the flexible substrate 110. It can improve the overall flatness of the thin film.

In the dielectric films 120a and 120b, active species of the precursor first gas and the plasma-treated second gas react with each other and are deposited on the flexible substrate 110, a silicon oxide film (SiO _x ), a silicon nitride film (SiNx), and intrinsic It may include at least one of a metal oxide film having a thrill. Here, the metal oxide film having a high dielectric constant is an aluminum oxide film (Al2O3), a germanium oxide film (GeO2), a strontium oxide film (SrO), a hafnium oxide film (HfO2), a yttrium oxide film (Y2O3), a zirconium oxide film (ZrO2), a tantalum oxide film ( Ta2O5), lanthanum oxide (LaO3), and may include at least one of titanium oxide (TiO2), but this is only an example and a high dielectric constant metal oxide film may be used as the dielectric films 120a and 120b of the present invention. It is obvious to the skilled person.

Meanwhile, hereinafter, it is assumed that the first gas is a silane gas (SiH ₄ ) and the second gas is an oxygen gas (O ₂ ). However, it is said that this is merely for convenience of description and is only one of the above-described first gas and second gas.

Referring to FIG. 2C (a), when deposition and etching are simultaneously performed, the etch rate is different depending on the direction of the surface on which the converted ions or active species of the first and second gases (SiH ₄ , O ₂ ) are incident. . That is, since the etch rate of the surface having the normal direction at a predetermined inclination angle is higher than the surface having the normal direction vertically, the etch rate is maintained high in the vicinity of the protrusion 111 of the flexible substrate 110. As a result, when the deposition and etching processes are performed simultaneously, the surface roughness of the deposited silicon oxide film (SiO _x ) 120a may be improved by using a property in which the overall deposition rate varies depending on the surface direction.

Referring to (b) of FIG. 2C, the planarization layer 120 is formed until the surface roughness R ₂ of the deposited silicon oxide film (SiO _x ) 120b reaches a predetermined threshold R _ref . The steps can be performed repeatedly.

Here, the predetermined threshold value (R _ref ) of the surface roughness may be approximately 0.1 nm to 10 nm, but this is only exemplary and the scope of the present invention is not limited thereto.

In addition, the thickness d of the planarization layer 120 may be 75 nm to 500 nm, and more preferably 100 nm to 300 nm. The reason is that when the thickness of the planarization layer 120 is smaller than 75 nm, the surface roughness of the silicon oxide film (SiO _x ) cannot reach a predetermined threshold (R _ref ), so that a flexible substrate of desired quality cannot be manufactured. Because there is. In addition, if the thickness of the planarization layer is greater than 500 nm, the overall thickness of the flexible substrate is too large, which makes it difficult to downsize and limits the bending of the panel when manufacturing a flexible display panel.

Meanwhile, the deposition rate and the etching rate of the planarization layer 120 may be controlled by adjusting the bias power applied to the substrate rest 12. At this time, the reference bias power for controlling the deposition rate and the etching rate may be 1 W/cm ² , and the intensity of the bias power may be adjusted within a range of 0.5 W/cm ² to 1.5 W/cm ² . However, the scope of the present invention is not limited to this, and the reference bias power may be set larger or smaller than 1 W/cm ² .

If the applied bias power is increased-for example, the bias power is adjusted within the range of 1 W/cm ² to 1.5 W/cm ^2- the ions of the second gas O ₂ incident on the substrate rest 12 The acceleration rate is increased to increase the etching rate, while the deposition rate may be decreased.

Conversely, when the applied bias power decreases-for example, the bias power is adjusted within a range of 0.5 W/cm ² to 1 W/cm ^2- the ions of the second gas O ₂ incident on the substrate rest 12 The deposition rate may be increased due to reduced acceleration, while the etch rate may decrease.

As described above, by adjusting the bias RF power source 17 according to the surface roughness of the flexible substrate 110-for example, by adjusting the intensity of the bias power-to improve the surface roughness of the planarization layer 120 by varying the deposition rate and the etching rate. Can.

Then, when the surface roughness of the planarization layer 120 reaches a predetermined threshold (R _ref ), the deposition and etching processes may be stopped, and the planarization operation may be terminated.

3 is a process flow chart showing a method of manufacturing a flexible substrate according to an embodiment of the present invention.

Referring to FIG. 3, a flexible substrate 110 for performing a planarization process is carried into the chamber 11, and the flexible substrate 110 carried into the chamber 11 is placed on the substrate holder 12. (S310). Here, the flexible substrate 110 has a predetermined surface roughness, and may be made of a polymer-based polymer synthetic resin material.

Thereafter, a plasma is generated in the reaction space inside the chamber 11 by applying the source RF power source 15, and the first gas (SiH ₄ ) and the first gas are introduced to the upper portion of the substrate rest 12 through the gas inlet 13. 2 gas (O ₂ ) is supplied (S320).

Then, a predetermined bias power is applied to the substrate rest 12 through the bias RF power supply 17 (S330).

When bias power is applied, deposition and etching processes are simultaneously performed on the flexible substrate 110 using a mixed gas converted into ions or active species in the plasma, and planarization including a silicon oxide film (SiO _x ) having a predetermined thickness is performed. The layer 120 is formed (S340). Here, the thickness d of the planarization layer 120 may be 75 nm to 500 nm, and more preferably 100 nm to 300 nm.

Thereafter, the supply of the first gas and the second gas is stopped, and a functional film (not shown) for preventing moisture permeation is attached to the planarization layer 120 (S350). The functional film (not shown) is formed on the flexible substrate 110 with the planarization layer 120 interposed therebetween, and may serve to prevent penetration of oxygen or moisture.

The light emitting layer (not shown) of the organic light emitting diode (OLED) device manufactured using the flexible substrate 100 is oxygen and/or/or loses its light emission function immediately upon contact with oxygen or moisture particles. Vulnerable to moisture. Therefore, it is preferable to manufacture a flexible substrate 100 by attaching a functional film (not shown) on the planarization layer 120 to protect the light emitting layer (not shown) from oxygen or moisture.

At this time, the functional film (not shown) may be an inorganic film, preferably SiO _x , SiN _x , SiO _x N _y , Al _x O _y , Al _x N _y , NiO _x , CoO _x , MgO at least one material or more Can be formed.

4 is a cross-sectional view of a flexible substrate manufactured using the planarization method illustrated in FIGS. 2 to 3.

Referring to FIG. 4, the flexible substrate 100 according to an embodiment may include a flexible substrate 110 having a predetermined surface roughness 111 and a planarization layer 120 disposed on the flexible substrate 110. Can. At this time, the surface roughness 411 of the flexible substrate 110 may have _a surface roughness (R _a ) of 50 nm to 100 nm.

The flexible substrate 110 may be made of a polymer-based polymer synthetic resin material, for example, at least among polyimide, polyester, polyacrylic, polyepoxy, polyethylene, polypropylene, and polystyrene. It may include one or more. However, this is only exemplary, and the material of the flexible substrate 110 is not necessarily limited thereto.

The surface of the planarization layer 120 may have a surface roughness (R _b ) of a predetermined threshold or less, and may include a deposited film having a predetermined thickness (d). Here, the deposited film may be formed of a dielectric film including at least one of a silicon oxide film (SiO _x ), a silicon nitride film (SiNx), and a metal oxide film having a high dielectric constant. In addition, the metal oxide film having a high dielectric constant is an aluminum oxide film (Al2O3), a germanium oxide film (GeO2), a strontium oxide film (SrO), a hafnium oxide film (HfO2), a yttrium oxide film (Y2O3), a zirconium oxide film (ZrO2), a tantalum oxide film ( Ta2O5), lanthanum oxide (LaO3), and may include at least one of titanium oxide (TiO2), but this is only an example, and a metal oxide film having a high dielectric constant can be applied to the planarization layer 120 of the present invention. It is obvious to the engineer.

The planarization layer 120 may be formed with a predetermined thickness d so that its surface has a surface roughness R _b below a predetermined threshold. Here, the predetermined threshold value (R _b ) of the surface roughness may be approximately 0.1 nm to 10 nm, but this is only exemplary. In addition, the thickness d of the planarization layer 120 may be approximately 75 nm to 500 nm, and more preferably 100 nm to 300 nm.

In general, for planarization treatment, when a solution-type material is applied on a flexible substrate and subjected to a heat treatment process or an ultraviolet (UV) curing process, it is not only time consuming (about 6 hours or more), but also bubbles during curing. When this occurs, the planarization film is formed non-uniformly, and the thickness of the planarization film reaches several tens of μm.

In general, a flexible display panel is formed by sequentially stacking display elements such as an organic light-emitting diode (OLED) and a window substrate on a flexible substrate. At this time, as the thickness difference between the flexible substrate and the window substrate disposed above and below the display element is smaller, stress applied to the display element during bending is minimized and cracks can be prevented. . Therefore, it is preferable to manufacture the flexible substrate and the window substrate so that the thicknesses correspond to each other.

However, the thickness of the window substrate has been gradually reduced in accordance with the trend of thinning and weight reduction of the flexible display panel, and if the thickness of the flattening film reaches several tens of μm, if the flexible substrate cannot be manufactured to be thin to correspond to the thickness of the window substrate, When bending, defects such as cracks or breakage of the display device are generated due to the concentration of stress, and this leads to a problem in that there are limitations in implementing bending in various forms.

On the other hand, the flexible substrate 100 according to an embodiment of the present invention performs a deposition and etching process at the same time to form a planarization layer 120 at a level of tens of nanometers to hundreds of nanometers. There is an advantage that can be lowered to 1/10 level. As such, if the overall thickness of the flexible substrate 100 is reduced by lowering the thickness of the planarization layer 120, bending of the flexible display panel in various forms, for example, bending that can be freely bendable, can be rolled up like paper. It is possible to implement rollable, foldable, etc. that can be completely folded in half, and it is possible to obtain an effect of preventing cracks, breakage, etc. by minimizing stress concentrated on the display element.

In addition, when a CVD process with a high deposition rate and a high-density plasma process with a high etching rate are used, the time to form the planarization layer 120 can also be greatly reduced. In addition, as described above, the surface roughness of the flexible substrate 100 may also be greatly improved.

Although not shown, the flexible substrate 100 according to another embodiment may be formed by further stacking a functional film (not shown) for preventing moisture permeation on the planarization layer 120. The functional film (not shown) is formed on the flexible substrate 110 with the planarization layer 120 interposed therebetween, and may serve to prevent penetration of oxygen or moisture. At this time, the functional film (not shown) may be an inorganic film, preferably SiO _x , SiN _x , SiO _x N _y , Al _x O _y , Al _x N _y , NiO _x , CoO _x , MgO at least one material or more Can be formed.

5 is a view comparing the AFM measurement photographs measuring the surface roughness of a flexible substrate having a planarization layer according to an exemplary embodiment of the present invention.

In general, since the surface roughness of a flexible substrate affects the electrical properties of an organic light emitting (OLED) display device that is sequentially stacked, the lower the surface roughness, the less the electrical and electronic properties of the organic light emitting display device. . Here, roughness peak to valley (Rpv), root mean square roughness (RQ), and roughness average (Ra) are used as parameters representing surface roughness, and the smaller the parameter value, the better the surface roughness.

Referring to FIG. 5, in the case of a general flexible substrate, the surface roughness Rpv was 51.191 nm, Rq was 1.729 nm, and Ra was 1.255 nm.

On the other hand, in the case of the flexible substrate according to an embodiment of the present invention, the surface roughness Rpv was measured to be 4.609 nm, Rq was 0.681, and Ra was 0.548 nm, the thickness of the planarization layer to be tested was 100 nm, and the flattening layer was deposited. It takes about 100 sec.

Through the experimental results shown in FIG. 5, it can be seen that the surface roughness value of the flexible substrate on which the planarization layer was formed was significantly lowered according to the manufacturing method according to an embodiment.

On the other hand, according to an embodiment of the present invention, the flexible substrate 110, the planarization layer 120, and a functional film (not shown) can be formed on the flexible substrate 100 is sequentially stacked electro-optical device. . The electro-optical device may include an anode, an organic material layer and a cathode.

The anode may include one or more selected from magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, aluminum, platinum, gold, tungsten, tantalum, copper, silver, tin and lead, and physical vapor deposition (Physical Vapor Deposition; PVD), Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD).

In addition, an auxiliary electrode may be additionally included to improve the resistance of the anode, and the auxiliary electrode may be formed by using at least one selected from the group consisting of a conductive sealant and a metal using a deposition process or a printing process. have.

The organic material layer may be manufactured by the above-described deposition process and/or solvent process using various polymer materials.

The organic material layer may include a light emitting layer, and may be a stacked structure including at least one selected from a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

As a material capable of forming a hole injection layer, a material having a large work function is preferably used to facilitate hole injection into the organic material layer.

As a material capable of forming the electron injection layer, it is generally preferable that the work function is a small material to facilitate electron injection into the organic material layer.

As a material capable of forming a light emitting layer, a material capable of emitting light in the visible light region by receiving and bonding holes and electrons from the hole transport layer and the electron transport layer, respectively, and a material having good quantum efficiency for fluorescence or phosphorescence is preferable.

As a material capable of forming an electron transport layer, a material capable of receiving electrons well from the electron injection layer and transferring them to the light emitting layer, a material having high mobility for electrons is suitable.

The cathode may include one or more of Al, Ag, Ca, Mg, Au, Mo, Ir, Cr, Ti, Pd, and alloys thereof, but the scope of the present invention is not necessarily limited thereto.

In addition, the present invention can provide a display device including the electro-optical device. In the display device, the electro-optical device may function as a pixel or a backlight. In addition to the configuration of the display device, those known in the art may be applied.

In addition, the present invention can provide a lighting device including the electro-optical device. In the lighting device, the electro-optical element may serve as a light emitting unit. In addition to those necessary for the lighting device, those known in the art may be applied.

Although only a few are described as described above in connection with the embodiments, various forms of implementation are possible. The technical contents of the above-described embodiments may be combined in various forms, unless the technologies are incompatible with each other, and may be implemented as a new embodiment.

It is apparent to those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit and essential features of the present invention. Accordingly, the above detailed description should not be construed as limiting in all respects, but should be considered illustrative. The scope of the invention should be determined by rational interpretation of the appended claims, and all changes within the equivalent scope of the invention are included in the scope of the invention.

Claims (18)

Placing a flexible substrate on the substrate rest inside the chamber;
Forming a planarization layer by performing a deposition process on the flexible substrate; And
Including; attaching a functional film on the planarization layer;
The step of forming the planarization layer is characterized in that performing an etching process, a method of manufacturing a flexible substrate. According to claim 1,
The flexible substrate, characterized in that made of a polymer-based polymer synthetic resin material, a method of manufacturing a flexible substrate. According to claim 1,
The forming of the planarization layer may further include supplying a first gas and a second gas into the chamber. The method of manufacturing a flexible substrate, further comprising. According to claim 3,
The first gas, characterized in that it comprises a silicon-based or metal-based gas, the method of manufacturing a flexible substrate. According to claim 3,
The second gas, characterized in that it comprises an oxygen (O ₂ ) or nitrogen (N ₂ ) gas, the method of manufacturing a flexible substrate. According to claim 3,
A method of manufacturing a flexible substrate, characterized in that the flow rate ratio of the second gas to the first gas is 0.5 to 5.0. According to claim 1,
The planarization layer is a silicon oxide film or a metal oxide film, characterized in that the flexible substrate manufacturing method. According to claim 1,
Further comprising; applying a bias power to the substrate rest;
The step of forming the planarization layer,
Method of manufacturing a flexible substrate, characterized in that to adjust the etching speed by varying the bias power applied to the substrate rest. According to claim 1,
Method of manufacturing a flexible substrate, characterized in that the surface roughness of the planarization layer is 0.1nm to 10nm. According to claim 1,
The thickness of the planarization layer, characterized in that 75nm to 500nm, a method of manufacturing a flexible substrate. A method for manufacturing an electro-optical device comprising the flexible substrate according to any one of claims 1 to 10. A method of manufacturing a display device including the flexible substrate according to any one of claims 1 to 10. Flexible substrates; And
It includes a planarization layer formed on the flexible substrate,
The flattening layer is characterized in that the surface roughness is 0.1nm to 10nm, flexible substrate. The method of claim 13,
The flexible substrate, characterized in that it comprises a polymer-based polymer synthetic resin material, flexible substrate. The method of claim 13,
The flattening layer is a flexible substrate, characterized in that a silicon oxide film or a metal oxide film. The method of claim 13,
The thickness of the planarization layer, characterized in that 75nm to 500nm, flexible substrate. An electro-optical device comprising the flexible substrate according to any one of claims 13 to 16. A display device comprising the flexible substrate according to any one of claims 13 to 16.

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