KR20200082344A - Display device - Google Patents

Abstract

The present invention provides a display device capable of reducing reflectance of external light. According to an embodiment of the present invention, the display device comprises: a substrate including a first sub-pixel, a second sub-pixel, and a third sub-pixel; a first electrode provided in each of the first sub-pixel, the second sub-pixel, and the third sub-pixel on the substrate and including a reflective electrode, a dielectric film, and a transparent electrode; a bank covering an edge of the first electrode and exposing a portion of the first electrode; a light-emitting layer provided on the first electrode; and a second electrode provided on the light-emitting layer. The first electrode includes a first area exposed without the bank and a second area with the bank. The first electrode provided in at least one of the first sub-pixel, the second sub-pixel, and the third sub-pixel has the reflective electrode with different thicknesses in the first region and the second region.

Description

Display device {DISPLAY DEVICE}

The present invention relates to a display device for displaying an image.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. Accordingly, recently, various display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display (OLED) have been used.

Among the display devices, the organic light emitting display device is a self-emission type, and has an excellent viewing angle, contrast ratio, and the like, compared to a liquid crystal display device (LCD), and requires a separate backlight. . In addition, the organic light emitting display device has an advantage of being capable of driving a DC low voltage, a fast response speed, and a low manufacturing cost.

The organic light emitting display device may have poor outdoor visibility due to reflection of external light. To solve this, the organic light emitting display device may reduce the external light reflectance by attaching a polarizing plate. However, when the polarizing plate is attached to the organic light emitting display device, there is a problem in that the light emitted from the light emitting layer passes through the polarizing plate and the luminance decreases.

An object of the present invention is to provide a display device capable of reducing external light reflectance.

A display device according to an exemplary embodiment of the present invention includes a first sub-pixel, a second sub-pixel and a third sub-pixel, a first sub-pixel, a second sub-pixel, and a third sub-pixel on the substrate. , A first electrode including a reflective electrode, a dielectric film and a transparent electrode, a bank covering a portion of the first electrode while covering an edge of the first electrode, a light emitting layer provided on the first electrode, and a second electrode provided on the light emitting layer It includes. The first electrode includes a first area where banks are not formed and a second area where banks are formed. The first electrodes provided in at least one of the first sub-pixel, the second sub-pixel, and the third sub-pixel have different thicknesses of the reflective electrodes in the first region and the second region.

According to the present invention, a reflective film is formed between the bank and the reflective electrode in the non-emission region. Accordingly, according to the present invention, the light incident from the outside may cancel the interference between the reflective electrode and the reflective film, so that the intensity of the light can be reduced. That is, the present invention can reduce the external light reflectance without using a polarizing plate.

In addition, the present invention allows the microcavity to be implemented between the reflective electrode and the second electrode in the light emitting region. Accordingly, according to the present invention, light having a specific wavelength among light emitted from the light emitting layer may cause constructive interference between the reflective electrode and the second electrode to increase the intensity of light. That is, the present invention can improve the external extraction efficiency of light in the emission region.

In addition, although the reflective film electrodes provided in each of the sub-pixels have different thicknesses in the first region and the second region, the dielectric layer may have a flat surface. Accordingly, in the present invention, a transparent electrode is formed on a flat surface, thereby preventing short circuit defects from occurring.

In addition to the effects of the present invention mentioned above, other features and advantages of the present invention are described below, or it will be clearly understood by those skilled in the art from the description and description.

1 is a perspective view showing a display device according to an exemplary embodiment of the present invention.
2 is a plan view schematically showing sub-pixels of a display device according to an exemplary embodiment of the present invention.
3 is a cross-sectional view according to an example of II of FIG. 1.
4 is a schematic cross-sectional view of a display device according to an exemplary embodiment of the present invention.
5 is a schematic cross-sectional view showing a path of light in a display device according to an exemplary embodiment of the present invention.
6 is a graph showing a reflectance reduction effect in a display device according to an exemplary embodiment of the present invention.
7 is a flowchart illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention.
8A to 8M are cross-sectional views illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention.
9A to 9C relate to a display device according to another exemplary embodiment of the present invention, which relates to a head mounted display (HMD) device.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to examples described below in detail together with the accompanying drawings. However, the present invention is not limited to the examples disclosed below, but will be implemented in various different forms, only the examples allow the disclosure of the present invention to be complete, and to those skilled in the art to which the present invention pertains. It is provided to fully inform the scope of the invention, and the invention is only defined by the scope of the claims.

Since the shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining examples of the present invention are exemplary, the present invention is not limited to the illustrated matters. The same reference numerals refer to the same components throughout the specification. In addition, in the description of the present invention, when it is determined that detailed descriptions of related known technologies may unnecessarily obscure the subject matter of the present invention, detailed descriptions thereof will be omitted. When'include','have','consist of', etc. mentioned in the present invention are used, other parts may be added unless'~man' is used. When a component is expressed as a singular number, the plural number is included unless otherwise specified.

In interpreting the components, it is interpreted as including the error range even if there is no explicit description.

In the case of the description of the positional relationship, for example, when the positional relationship of two parts is described as'~top','~upper','~bottom','~side', etc.,'right' Alternatively, one or more other parts may be located between the two parts unless'direct' is used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another component. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

In describing the components of the present invention, terms such as first and second may be used. These terms are only for distinguishing the component from other components, and the nature, order, order, or number of the component is not limited by the term. When a component is described as being "connected", "coupled" or "connected" to another component, the component may be directly connected to or connected to the other component, but different components between each component It should be understood that the "intervenes" may be, or each component may be "connected", "coupled" or "connected" through other components.

Each of the features of the various examples of the present invention can be partially or wholly combined or combined with each other, technically various interlocking and driving is possible, and each of the examples can be implemented independently of each other, or can be implemented together in an associative relationship. .

Hereinafter, an example of a display device according to the present invention will be described in detail with reference to the accompanying drawings. In adding reference numerals to the components of each drawing, the same components may have the same reference numerals as possible even though they are displayed on different drawings.

1 is a perspective view showing a display device according to an exemplary embodiment of the present invention, FIG. 2 is a plan view schematically showing sub-pixels of a display device according to an exemplary embodiment of the present invention, and FIG. 3 is one of II of FIG. 1. It is a sectional view according to an example.

1 to 3, the display device 100 according to an exemplary embodiment of the present invention includes a substrate 110, a circuit element layer 200, a first electrode 300, a bank 345, and a light emitting layer 400 ), a second electrode 500, an encapsulation layer 600, and a color filter 700.

The substrate 110 may be made of glass or plastic, but is not limited thereto, and may be made of a semiconductor material such as a silicon wafer. The substrate 110 may be made of a transparent material or an opaque material. The display device 100 according to an exemplary embodiment of the present invention is formed by a so-called top emisison method in which emitted light is emitted upward, and thus, the material of the substrate 110 is not only transparent but also opaque. One material can be used.

The first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 are provided on the substrate 110. The first sub-pixel P1 emits red light, the second sub-pixel P2 emits green light, and the third sub-pixel P3 may be provided to emit blue light, but is not limited thereto. It is not, for example, the arrangement order of each sub-pixel P1, P2, P3 may be variously changed.

The circuit element layer 200 is formed on the substrate 110.

The circuit element layer 200 includes circuit elements including various signal wires, transistors, and capacitors for each sub-pixel P1, P2, and P3. The signal wires may include a gate wire, a data wire, a power wire, and a reference wire, and the transistor may include a switching transistor, a driving transistor (TFT), and a sensing transistor.

The switching thin film transistor is switched according to the gate signal supplied to the gate wiring and serves to supply the data voltage supplied from the data wiring to the driving transistor TFT.

The driving transistor TFT is switched according to the data voltage supplied from the switching thin film transistor to generate the data current from the power supplied from the power wiring and serves to supply it to the first electrodes 310, 320, and 330.

The sensing transistor serves to sense a threshold voltage deviation of the driving transistor (TFT), which is a cause of deterioration in image quality, and the current of the driving transistor is the reference wiring in response to a sensing control signal supplied from a gate wiring or a separate sensing wiring. To supply.

The capacitor serves to maintain the data voltage supplied to the driving transistor TFT for one frame, and is connected to the gate terminal and the source terminal of the driving transistor TFT, respectively.

The circuit element layer 200 is provided with contact holes CH for each of the sub-pixels P1, P2, and P3, and the source terminal or the drain terminal of the driving transistor TFT is exposed through the contact hole CH. The contact hole CH may be provided in the non-emission area NEA overlapping the bank 345 as illustrated, but is not limited thereto. The contact hole CH may be provided in the emission area EA that does not overlap the bank 345.

The first electrode 300 is patterned for each sub-pixel P1, P2, and P3 on the circuit element layer 200. One first electrode 310 is formed in the first sub-pixel P1, the other first electrode 320 is formed in the second sub-pixel P2, and the third sub-pixel P3 is further formed. Another first electrode 330 is formed.

The first electrodes 310, 320 and 330 are connected to a driving transistor (TFT) provided in the circuit element layer 200. Specifically, the first electrodes 310, 320, and 330 are connected to the source terminal or the drain terminal of the driving transistor TFT through the contact hole CH provided in the circuit element layer 200.

The bank 345 is formed to cover the ends of the first electrodes 310, 320, and 330 on the circuit element layer 200, whereby current is concentrated at the ends of the first electrodes 310, 320, and 330 to emit light. The problem of reduced efficiency can be prevented.

The bank 345 is formed in a matrix structure at a boundary between the plurality of sub-pixels P1, P2, and P3, and defines a light emitting area EA in each of the plurality of sub-pixels P1, P2, and P3. That is, in each sub-pixel P1, P2, P3, the bank 345 is not formed, and the exposed area of the exposed first electrodes 310, 320, 330 becomes the emission area EA, and the bank 345 The region where is formed becomes the non-emission region (NEA). The bank 345 may be made of an inorganic insulating film having a relatively thin thickness, but may also be made of an organic insulating film having a relatively thick thickness.

The reflective layer 347 is provided to overlap the bank 345 on the first electrodes 310, 320, and 330. That is, the reflective film 347 is provided between the bank 345 and the first electrodes 310, 320, and 330, so that the light reflected by the first electrodes 310, 320, and 330 is first electrodes 310, 320, 330).

The reflective film 347 may be formed of a metal material having a high reflectance, for example, aluminum (Al) or silver (Ag).

The emission layer 400 is formed on the first electrodes 310, 320, and 330. The emission layer 400 may also be formed on the bank 345. That is, the light emitting layer 400 is also formed in each sub-pixel P1, P2, and P3 and a boundary region therebetween.

The emission layer 400 may be a white emission layer that emits white light. In this case, the emission layer 400 may be a common layer commonly formed in the sub-pixels P1, P2, and P3.

When the light emitting layer 400 is a white light emitting layer, it may be formed in a tandem structure of two or more stacks. Each of the stacks may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer.

Also, a charge generating layer may be formed between the stacks. The charge generation layer may include an n-type charge generation layer positioned adjacent to the lower stack and a p-type charge generation layer formed adjacent to the upper stack and formed on the n-type charge generation layer. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generating layer may be formed of an alkali metal such as Li, Na, K, or Cs, or an organic layer doped with an alkaline earth metal such as Mg, Sr, Ba, or Ra. The p-type charge generation layer may be formed by doping a dopant in an organic material having hole transport capability.

The second electrode 500 is formed on the light emitting layer 400. The second electrode 500 may function as a cathode of the display device. The second electrode 500 is formed in each sub-pixel P1, P2, and P3 and a boundary region therebetween, similarly to the light emitting layer 400. That is, the second electrode 500 may also be formed on the top of the bank 345.

Since the display device according to an exemplary embodiment of the present invention is made of an upper emission method, the second electrode 500 may include a conductive material that can transmit light emitted from the emission layer 400 upward. In particular, the second electrode 500 may be formed of a semi-transparent electrode, and accordingly, a micro cavity effect may be obtained for each of the sub-pixels P1, P2, and P3. When the second electrode 500 is made of a semi-transparent electrode, a microcavity effect can be obtained while light reflection and re-reflection are repeated between the second electrode 500 and the first electrodes 310, 320, and 330.

According to an embodiment of the present invention, the first electrodes 310, 320, and 330 provided in each of the sub-pixels P1, P2, and P3 include a first region A1 and a second region A2. . The first area A1 is an area exposed without being covered by the bank 345 and corresponds to the light emitting area EA. The second area A2 corresponds to the area covered by the bank 345.

The first electrodes 310, 320, and 330 may include reflective electrodes. The reflective electrodes of the first electrodes 310, 320, and 330 provided in each of the sub pixels P1, P2, and P3 configure different distances from the second electrode 500 in the first area A1. Through this, the display device 100 according to the present invention allows light of different wavelengths to be emitted for each sub-pixel P1, P2, P3 through micro-cavity characteristics.

When the first electrodes 310, 320, and 330 include a reflective electrode and the second electrode 500 includes a semi-transparent electrode, light reflection and re-reflection may be repeated between the reflective electrode and the semi-transparent electrode. When the distance between the reflective electrode and the semi-transparent electrode is a half wavelength of light of a specific wavelength (integer multiple of λ), constructive interference may occur to improve external extraction efficiency of light. This property of light is called microcavity property. do.

When the distance between the reflective electrode and the semi-transparent electrode in the first sub-pixel P1 is made to be an integer multiple of the half-wavelength of the red wavelength light by using the microcavity characteristics as described above, for example, the red wavelength The light has a constructive interference, and the light of the other wavelengths cancels out, so that the light of the red wavelength in the first sub-pixel P1 is emitted at a higher intensity than the light of the other wavelength, so that the red light in the first sub-pixel P1. The effect of being released can be obtained.

In addition, when the distance between the reflective electrode and the semi-transparent electrode in the second sub-pixel P2 is to be an integer multiple of the half-wavelength of the light of the green wavelength, the light of the green wavelength occurs and the interference of the other wavelengths is canceled. Since interference occurs, light of a green wavelength is emitted at a greater intensity than light of a different wavelength in the second sub-pixel P2, thereby obtaining an effect of emitting green light at the second sub-pixel P2.

In addition, when the distance between the reflective electrode and the semi-transparent electrode in the third sub-pixel P3 is to be an integer multiple of the half-wavelength of the blue wavelength light, the blue wavelength light undergoes constructive interference and the other wavelength light cancels out. Since interference occurs, light of a blue wavelength is emitted at a intensity greater than that of other wavelengths in the third sub-pixel P3, thereby obtaining an effect of emitting blue light in the third sub-pixel P3.

As such, according to an embodiment of the present invention, red light is emitted from the first sub-pixel P1, green light is emitted from the second sub-pixel P2, and blue light is emitted from the third sub-pixel P3. It can be configured to emit. However, even if the micro-cavity characteristics are used, not only light of a desired wavelength band is emitted from each sub-pixel P1, but light of an undesired wavelength band may be partially mixed. For example, not only red light is emitted from the first sub-pixel P1, but red light may be partially mixed with light of another color, specifically, cyan light.

Therefore, according to an embodiment of the present invention, by forming the color filter 700 on the second electrode 500, the color filter 700 causes the unwanted wavelength band in each sub-pixel P1, P2, P3. Blocks the emission of light.

Meanwhile, the reflective electrodes of the first electrodes 310, 320, and 330 provided in each of the sub-pixels P1, P2, and P3 constitute the same distance from the reflective film 347 in the second region A2. Through this, the display device 100 according to an exemplary embodiment of the present invention can prevent light incident from the outside from being reflected to the reflective electrodes of the first electrodes 310, 320 and 330 and emitted to the outside.

Hereinafter, a configuration in which light of a specific wavelength band is emitted for each sub-pixel P1, P2, and P3 through micro-cavity characteristics and a configuration for reducing external light reflection will be described in detail with reference to FIGS. 4 and 5. do.

4 is a schematic cross-sectional view of a display device according to an exemplary embodiment of the present invention.

In FIG. 4, the configuration of the first electrodes 310, 320, and 330 in the structure of FIG. 3 is more specifically illustrated, and for convenience of description, the substrate 110, circuit element layer 200, and bank ( 345), the encapsulation layer 600 and the color filter 700 are not shown.

Referring to FIG. 4, the first electrodes 310, 320, and 330 are patterned for each sub-pixel P1, P2, and P3. The first electrodes 310, 320, and 330 include a first region A1 exposed without being covered by the bank 345 and a second region A2 covered by the bank 345. The light emitting layer 400 and the second electrode 500 are sequentially stacked on the first region A1 of the first electrodes 310, 320, and 330. The reflective layer 347, the bank 345, the light emitting layer 400, and the second electrode 500 are sequentially stacked on the second region A2 of the first electrodes 310, 320, and 330.

The first electrodes 310, 320, and 330 provided in each of the sub pixels P1, P2, and P3 may have the same thickness. Specifically, the thickness T4 of the first electrode 310 provided in the first sub-pixel P1, the thickness T10 of the first electrode 320 provided in the second sub-pixel P2, and the third The thickness T15 of the first electrodes 330 provided in the sub-pixels P3 are all the same.

The first electrode 310 provided in the first sub-pixel P1 includes a first reflective electrode 311, a first transparent electrode 312, and the first reflective electrode 311 and the first transparent electrode 312. It includes a first dielectric film 313 provided between.

The first transparent electrode 312 has the same thickness T3 in the first region A1 and the second region A2. The first transparent electrode 312 does not generate a step at the boundary between the first region A1 and the second region A2. That is, the upper surface of the first electrode 310 may be a flat surface. In addition, the first transparent electrode 312 provided in the first sub-pixel P1 is also thick with the transparent electrodes 322 and 332 provided in each of the second sub-pixel P2 and the third sub-pixel P3. (T3) is the same.

The first transparent electrode 312 is electrically connected to the source terminal or the drain terminal of the driving transistor TFT described above. Specifically, the first transparent electrode 312 may be directly connected to the source terminal or the drain terminal of the driving transistor TFT, and may be connected to the source terminal or the drain terminal of the driving transistor TFT via the first reflective electrode 311. It may be connected. Thus, the first transparent electrode 312 may be connected to the first reflective electrode 311 through a contact hole (not shown) provided in the first dielectric layer 313, but is not limited thereto, and the first transparent electrode ( 312) may not be connected to the first reflective electrode 311. The first reflective electrode 311 may function as a reflective electrode, but may not function as an anode for generating holes. Therefore, the first reflective electrode 311 is not necessarily connected to the first transparent electrode 312. .

The first reflective electrode 311 has different thicknesses T1 and T5 in the first area A1 and the second area A2. Specifically, the first reflective electrode 311 has a first thickness T1 in the first area A1 and a fifth thickness T5 greater than the first thickness T1 in the second area A2. .

The first reflective electrode 311 may be made of a reflective material that reflects light emitted from the light emitting layer 400 upward, and the first transparent electrode 312 may be made of a transparent material for generating holes. Accordingly, light reflection and re-reflection occur between the first reflective electrode 311 made of a reflective material and the second electrode 500 made of a translucent material, thereby obtaining a microcavity effect.

Throughout this specification, the reflective electrode is an electrode that reflects incident light, the transparent electrode is an electrode that transmits incident light, and the translucent electrode is an electrode that transmits a portion of the incident light and reflects the rest. In the order of the electrode, the translucent electrode, and the transparent electrode, the transparency is excellent, and in terms of the reflectivity, the transparency is excellent in the order of the transparent electrode, the translucent electrode, and the reflective electrode.

When the distance S1 between the first reflective electrode 311 and the second electrode 500 becomes a half wavelength of light of a red wavelength (integer multiple of λ), reinforcement interference occurs to further amplify the light of the red wavelength, and the aforementioned reflection And if the re-reflection process is repeated, the degree of amplification of the light of the red wavelength may be continuously increased.

In this case, the first dielectric layer 313 provided between the first reflective electrode 311 and the first transparent electrode 312 is between the first reflective electrode 311 and the second electrode 500 in the first region A1. Is to allow the distance S1 to be half the wavelength of the red wavelength light (integer multiple of λ. To this end, the first dielectric film 313 has the second thickness T2 adjusted appropriately in the first region A1. The first dielectric layer 313 may be made of a transparent material such as silicon oxide, silicon nitride, ITO, or IZO.

Since the first dielectric film 313 has the second thickness T2 in the first region A1, the first reflective electrode 311 has the first thickness T1 in the first region A1.

Meanwhile, the distance from the lower surface of the first reflective electrode 311 to the upper surface of the first dielectric layer 313 in the first sub-pixel P1 is the first sub-pixel P2 to be removed from the lower surface of the second reflective electrode 321 in the second sub-pixel P2. This is the same as the distance from the bottom surface of the first dielectric film 323 to the bottom surface of the third reflective electrode 331 in the third sub-pixel P3. That is, the dielectric layers 313, 323, and 333 provided in each of the sub-pixels P1, P2, and P3 are formed at the same height.

The distance from the lower surface of the first transparent electrode 312 to the lower surface of the second electrode 500 in the first sub-pixel P1 is the second electrode from the lower surface of the third transparent electrode 332 in the third sub-pixel P3. It is the same as the distance to the lower surface of 500. When considering the implementation of micro-cavity characteristics in the third sub-pixel P3, the distance from the bottom surface of the third transparent electrode 332 to the bottom surface of the second electrode 500 may be in a range of 180 nm to 270 nm, and thus, The distance from the lower surface of the first transparent electrode 312 to the lower surface of the second electrode 500 in the first sub-pixel P1 may also be in the range of 180 nm to 270 nm.

When considering the implementation of micro-cavity characteristics in the first sub-pixel P1, when the first dielectric layer 313 has a refractive index range of 1.8 like silicon nitride, the first dielectric layer 313 in the first region A1 The second thickness (T2) of may be preferably in the range of 116nm to 175nm.

Meanwhile, a micro-cavity characteristic is not implemented between the first reflective electrode 311 and the reflective film 347. Rather, the light incident from the outside to the first reflective electrode 311 in the second region A2 is offset and the intensity is reduced, and the reflection and ash between the first reflective electrode 311 and the reflective film 347 are reduced. As the reflection process repeats, it can be reduced continuously.

In this case, the first dielectric film 313 provided between the first reflective electrode 311 and the first transparent electrode 312 is the distance between the first reflective electrode 311 and the reflective film 347 in the second region A2. (S4) is to enable offset interference to occur from the light incident from the outside. To this end, the sixth thickness T6 of the first dielectric layer 313 may be appropriately adjusted in the second region A2. At this time, the sixth thickness T6 of the first dielectric film 313 is different from the second thickness T2 in the first region A1 and less than the second thickness T2 in the first region A1. Can. When the first dielectric film 313 has a refractive index range of 1.8, such as silicon nitride, the sixth thickness T6 of the first dielectric film 313 in the second region A2 may be in the range of 56 nm to 84 nm. have.

Since the first dielectric film 313 has a sixth thickness T6 in the second region A2, the first reflective electrode 311 is a fifth thickness different from the first thickness T1 in the second region A2. (T5). That is, the fifth thickness T5 of the first reflective electrode 311 in the second region A2 may be greater than the first thickness T1 of the first reflective electrode 311 in the first region A1. have.

The first electrode 320 provided in the second sub-pixel P2 includes a second reflective electrode 321, a second transparent electrode 322, and the second reflective electrode 321 and the second transparent electrode 322. And a second dielectric layer 323 provided therebetween.

The second transparent electrode 322 has the same thickness T9 in the first region A1 and the second region A2. The second transparent electrode 322 does not generate a step at the boundary between the first region A1 and the second region A2. That is, the upper surface of the first electrode 320 may be a flat surface. In addition, the second transparent electrode 322 provided in the second sub-pixel P2 is also thick with the transparent electrodes 312 and 332 provided in each of the first sub-pixel P1 and the third sub-pixel P3. (T9) is the same.

The second transparent electrode 322 is electrically connected to the source terminal or the drain terminal of the above-described driving transistor TFT. Specifically, the second transparent electrode 322 may be directly connected to the source terminal or the drain terminal of the driving transistor TFT, and may be connected to the source terminal or the drain terminal of the driving transistor TFT through the second reflective electrode 321. Can. Thus, the second transparent electrode 322 may be connected to the second reflective electrode 321 through a contact hole (not shown) provided in the second dielectric layer 323, but is not limited thereto, and the second transparent electrode ( 322 may not be connected to the second reflective electrode 321. The second reflective electrode 321 may function as a reflective electrode but may not function as an anode for generating holes, and thus, the second reflective electrode 321 is not necessarily connected to the second transparent electrode 322. .

4, the second reflective electrode 321 may have the same thickness T7 in the first area A1 and the second area A2, but is not limited thereto. In some cases, the second reflective electrode 321 may have different thicknesses in the first area A1 and the second area A2.

The second reflective electrode 321 may be formed of a reflective electrode that reflects light emitted from the light emitting layer 400 upward, and the second transparent electrode 322 may be formed of a transparent electrode for generating holes. Accordingly, light reflection and re-reflection occur between the second reflective electrode 321 made of a reflective electrode and the second electrode 500 made of a semi-transparent electrode, thereby obtaining a microcavity effect. The second reflective electrode 321 may be made of the same material as the first reflective electrode 311, and the second transparent electrode 322 may be made of the same material as the first transparent electrode 312.

When the distance S2 between the second reflective electrode 321 and the second electrode 500 becomes half a wavelength of light of a green wavelength (integer multiple of λ), constructive interference occurs to further amplify the light of the green wavelength. If the re-reflection process is repeated, the degree of amplification of the light of the green wavelength may be continuously increased.

In this case, the second dielectric layer 323 provided between the second reflective electrode 321 and the second transparent electrode 322 is between the second reflective electrode 321 and the second electrode 500 in the first region A1. The distance (S2) of the green wavelength is to be half the wavelength of light (integer multiple of λ. To this end, the second dielectric film 323, the eighth thickness (T8) in the first region (A1) to be properly adjusted The second dielectric layer 323 may be made of the same material as the first dielectric layer 313.

Since the second dielectric layer 323 has an eighth thickness T8 in the first region A1, the second reflective electrode 321 has a seventh thickness T7 in the first region A1.

The distance from the bottom surface of the second transparent electrode 322 to the bottom surface of the second electrode 500 in the second sub-pixel P2 is the second electrode from the bottom surface of the third transparent electrode 332 in the third sub-pixel P3. It is the same as the distance to the lower surface of 500. Therefore, a distance from the lower surface of the second transparent electrode 322 to the lower surface of the second electrode 500 in the second sub-pixel P2 may be in a range of 180 nm to 270 nm.

When considering the implementation of micro-cavity characteristics in the second sub-pixel P2, when the second dielectric layer 323 has a refractive index range of 1.8 like silicon nitride, the second dielectric layer 323 in the first region A1 The 8th thickness (T8) of may be preferably in the range of 56nm to 84nm.

Meanwhile, a micro-cavity characteristic is not implemented between the second reflective electrode 321 and the reflective film 347. Rather, the light incident from the outside to the second reflective electrode 321 in the second region A2 is reduced in intensity due to offset interference, and the reflection and ash between the second reflective electrode 321 and the reflective film 347 As the reflection process repeats, it can be reduced continuously.

In this case, the second dielectric film 323 provided between the second reflective electrode 321 and the second transparent electrode 322 is a distance between the second reflective electrode 321 and the reflective film 347 in the second region A2. (S5) is to enable offset interference to occur in the light incident from the outside. To this end, the second dielectric layer 323 may have an appropriately adjusted twelfth thickness T12 in the second region A2. In this case, the twelfth thickness T12 of the second dielectric layer 323 may be the same as the eighth thickness T8 in the first region A1, but is not limited thereto. The twelfth thickness T12 of the second dielectric film 323 may be different from the eighth thickness T8 in the first region A1. When the second dielectric layer 323 has a refractive index range of 1.8, such as silicon nitride, the thickness of the twelfth thickness T12 of the second dielectric layer 323 in the second region A2 may range from 56 nm to 84 nm. have.

Since the second dielectric layer 323 has a twelfth thickness T12 in the second region A2, the second reflective electrode 321 has an eleventh thickness T11 in the second region A2. In this case, when the first dielectric layer 323 has the same thickness in the first region A1 and the second region A2, the eleventh thickness T11 of the second reflective electrode 321 is the first region A1. It may be the same as the seventh thickness T7 at.

Meanwhile, the eleventh thickness T11 in the second region A2 of the second dielectric film 323 is the same as the sixth thickness T6 in the second region A2 of the first dielectric film 313. Accordingly, the eleventh thickness T11 in the second region A2 of the second reflective electrode 323 is the same as the fifth thickness T5 in the second region A2 of the first reflective electrode 313. Do. This is because the light incident from the outside is the same.

The first electrode 330 provided in the third sub-pixel P3 includes a third reflective electrode 331, a third transparent electrode 332, and a third dielectric layer 333.

The third transparent electrode 332 has the same thickness T14 in the first region A1 and the second region A2. The third transparent electrode 332 does not generate a step at the boundary between the first region A1 and the second region A2. That is, the upper surface of the first electrode 330 may be a flat surface. In addition, the third transparent electrode 332 provided in the third sub-pixel P3 is also thick with the transparent electrodes 312 and 322 provided in each of the first sub-pixel P1 and the second sub-pixel P2. (T14) is the same.

The third transparent electrode 332 is electrically connected to the source terminal or the drain terminal of the driving transistor TFT described above. Specifically, the third transparent electrode 332 may be directly connected to the source terminal or the drain terminal of the driving transistor TFT, and may be connected to the source terminal or the drain terminal of the driving transistor TFT through the third reflective electrode 331. Can. The third transparent electrode 332 may be formed on the top surface of the third reflective electrode 331, but in some cases, a third dielectric film 333 is provided between the third transparent electrode 332 and the third reflective electrode 331. It may be formed.

The third reflective electrode 331 has different thicknesses T13 and T16 in the first area A1 and the second area A2. Specifically, the third reflective electrode 331 has a thirteenth thickness T13 in the first region A1 and a sixteenth thickness T16 smaller than the thirteenth thickness T13 in the second region A2. .

The third reflective electrode 331 may be formed of a reflective electrode that reflects light emitted from the light emitting layer 400 upward, and the third transparent electrode 332 may be formed of a transparent electrode for generating holes. Accordingly, light reflection and re-reflection occur between the third reflective electrode 331 made of the reflective electrode and the second electrode 500 made of the semi-transparent electrode to obtain a microcavity effect. The third reflective electrode 331 is made of the same material as the first reflective electrode 311 or the second reflective electrode 321, and the third transparent electrode 332 is the second transparent electrode 322 or the first transparent electrode It may be made of the same material as 312.

When the third distance T3 between the third reflective electrode 331 and the second electrode 500 becomes a half wavelength of the blue wavelength light (integer multiple of λ), reinforcement interference occurs, and the blue wavelength light is further amplified. When the reflection and re-reflection processes are repeated, the degree of amplification of the light of the blue wavelength may be continuously increased.

In this case, the third dielectric layer 333 provided between the third reflective electrode 331 and the third transparent electrode 332 is between the third reflective electrode 331 and the second electrode 500 in the first region A1. The distance (S3) is to ensure that the half-wavelength of the blue wavelength light (integer multiple of λ. To this end, the third dielectric film 333 may be appropriately adjusted in thickness in the first region A1. The dielectric layer 333 may have a thickness of 0 in the first region A1, that is, the third reflective electrode 331 may contact the third transparent electrode 332 in the first region A1. 2 The thickness T2 may be appropriately adjusted The third dielectric film 323 may be made of the same material as the second dielectric film 323 or the first dielectric film 313.

Since the third dielectric layer 333 has a thickness of 0 in the first region A1, the third reflective electrode 331 has a 13th thickness T13 in the first region A1.

Meanwhile, a micro-cavity characteristic is not implemented between the third reflective electrode 331 and the reflective film 347. Rather, the light incident from the outside to the second region A2 of the third reflective electrode 331 is offset and the intensity is reduced, and reflection and re-reflection between the third reflective electrode 331 and the reflective film 347 As the process repeats, it may decrease continuously.

In this case, the third dielectric film 333 provided between the third reflective electrode 331 and the third transparent electrode 332 is the distance between the third reflective electrode 331 and the reflective film 347 in the second region A2. (S6) is to enable offset interference to occur in the light incident from the outside. To this end, the third dielectric layer 333 may have an appropriately adjusted 17th thickness T17 in the second region A2. In this case, the 17th thickness T17 of the third dielectric film 333 is different from the thickness in the first region A1 and may be greater than the thickness in the first region A1. When the third dielectric layer 333 has a refractive index range of 1.8, such as silicon nitride, the 17th thickness T17 of the third dielectric layer 333 in the second region A2 may be in the range of 56 nm to 84 nm. have.

Since the third dielectric layer 333 has the 17th thickness T17 in the second region A2, the third reflective electrode 331 is the 16th thickness different from the 13th thickness T13 in the second region A2. (T16). That is, the 17th thickness T17 in the second region A2 of the third reflective electrode 331 may be smaller than the 13th thickness T13 in the first region A1.

Meanwhile, the 17th thickness T17 in the second region A2 of the third dielectric film 333 is the 6th thickness T6 in the second region A2 of the first dielectric film 313, and the second dielectric film It is the same as the eleventh thickness T11 in the second area A2 of (323).

Accordingly, the sixteenth thickness T16 in the second region A2 of the third reflective electrode 333 is the eleventh thickness T11 in the second region A2 of the second reflective electrode 323, and It is the same as the fifth thickness T5 in the second region A2 of the first reflective electrode 313. This is because the light incident from the outside is the same.

5 is a schematic cross-sectional view showing a path of light in a display device according to an exemplary embodiment.

In FIG. 5, the configuration of the first electrodes 310, 320, and 330 in the structure of FIG. 3 is shown in more detail. For convenience of description, the substrate 110, the circuit element layer 200, and the bank shown in FIG. 345), the encapsulation layer 600 and the color filter 700 are not shown.

Referring to FIG. 5, the light L1 emitted from the light emitting layer 400 is repeatedly reflected and re-reflected between the reflective electrodes 311, 321, and 331 in the first region A1 and the second electrode 500. As a result, micro-cavities can be implemented.

For example, in the first sub-pixel P1, the distance between the reflective electrode 311 and the second electrode 500 in the first region A1 may be an integer multiple of half a wavelength of red wavelength light. Among the light emitted from the light emitting layer 400, the red wavelength light L1 is repeatedly reflected and re-reflected between the reflective electrode 311 and the second electrode 500 in the first region A1, thereby causing reinforcement interference. The intensity of the light can be increased.

Meanwhile, the light L2 incident on the first region A1 of the reflective electrodes 311, 321, and 331 from the outside is reflected and re-reflected between the reflective electrodes 311, 321, 331 and the second electrode 500. As is repeated, offset interference occurs and the intensity of light may decrease. Accordingly, the display device 100 according to an exemplary embodiment of the present invention may reduce external light reflectance in the emission area EA.

On the other hand, when the bank 345 having a relatively thick thickness is formed between the reflective electrodes 311, 321, 331 and the second electrode 500, the reflective electrodes 311, 321, 331 and the second electrode 500 A micro-cavity condition cannot be established in between. Accordingly, the light incident from the outside does not cause offset interference, and most of the light is reflected by the reflective electrodes 311, 321, and 331 and is emitted to the outside. That is, in the region where the bank 345 is formed, it has an external light reflectance similar to that of the reflective electrodes 311, 321, and 331.

The display device 100 according to an exemplary embodiment of the present invention forms a reflective film 347 between the bank 345 and the reflective electrodes 311, 321, and 331 in order to reduce external light reflectivity in an area where the bank 345 is formed. do. Light L3 incident on the second region A2 of the reflective electrodes 311, 321, and 331 from the outside is canceled out while reflection and re-reflection are repeated between the reflective electrodes 311, 321, 331 and the reflective film 347 The intensity of light may decrease due to interference. Accordingly, the display device 100 according to an exemplary embodiment of the present invention may reduce external light reflectance in the non-emission area NEA, particularly, the second area A2 of the first electrodes 310, 320, and 330. Can.

The display devices 100 and B according to an exemplary embodiment of the present invention can significantly reduce external light reflectivity as shown in FIG. 6 compared to the display device A on which the reflective film 347 is not formed.

Referring back to FIG. 3, the encapsulation layer 600 is formed on the second electrode 500 to prevent external moisture from penetrating the light emitting layer 400. The encapsulation layer 600 may be formed of an inorganic insulating material, or may be formed of a structure in which an inorganic insulating material and an organic insulating material are alternately stacked, but is not limited thereto.

Meanwhile, although not illustrated in FIG. 3, a capping layer may be additionally formed between the second electrode 500 and the encapsulation layer 600.

The color filter 700 is formed on the encapsulation layer 600. The color filter 700 absorbs light of a predetermined wavelength among light emitted from the light emitting layer 400, so that only light of a specific wavelength is emitted for each sub-pixel P1, P2, and P3. The color filter 700 may be formed using materials known in the art, such as pigments, resins, or dielectrics that absorb light in a specific wavelength range.

The color filter 700 is patterned for each sub-pixel P1, P2, P3. Specifically, the color filter 700 includes a first color filter CF1 provided to correspond to the first sub-pixel P1, a second color filter CF2 provided to correspond to the second sub-pixel P2, and And a third color filter CF3 provided to correspond to the third sub-pixel P3.

The first color filter CF1 includes red pigment that passes light in a red wavelength band among light emitted from the light emitting layer 400 and absorbs light in other wavelength bands, for example, light in a green wavelength band and light in a blue wavelength band.

The second color filter CF2 includes green pigment that passes light in a green wavelength band among light emitted from the light emitting layer 400 and absorbs light in a different wavelength band, for example, light in a red wavelength band and light in a blue wavelength band.

The third color filter CF3 includes a blue pigment that passes light in a blue wavelength band among light emitted from the light emitting layer 400 and absorbs light in other wavelength bands, for example, light in a red wavelength band and light in a green wavelength band.

Meanwhile, a black matrix BM is provided between the first color filter CF1, the second color filter CF2, and the third color filter CF3, so that color mixing between adjacent sub-pixels P1, P2, P3 It can be prevented from occurring.

7 is a flowchart illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention, and FIGS. 8A to 8M are cross-sectional views showing a method of manufacturing the display device according to an exemplary embodiment of the present invention.

First, the circuit element layer 200 is formed on the substrate 110 (S701).

More specifically, as shown in FIG. 8A, a driving transistor TFT is formed on the substrate 110.

Then, an interlayer insulating film is formed on the driving transistor TFT. The interlayer insulating film may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or multiple films thereof, but is not limited thereto. The interlayer insulating film may be formed of an organic film, for example, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. have. Alternatively, the interlayer insulating film may be formed of multiple films composed of at least one inorganic film and at least one organic film.

Next, the first electrodes 310, 320, and 330 are formed (S702).

First, reflective electrodes 311, 321, and 331 are formed on the circuit element layer 200. More specifically, as illustrated in FIG. 8B, the first reflective films 311a, 321a, and 331a are patterned on the circuit element layer 200 for each of the sub-pixels P1, P2, and P3. The first reflective films 311a, 321a, and 331a are connected to the source terminal or the drain terminal of the driving transistor TFT through the contact hole CH.

Then, the second reflective films 311b, 321b, and 331b are patterned for each of the sub-pixels P1, P2, and P3 on the first reflective films 311a, 321a, and 331a as shown in FIG. 8C. In this case, the second reflective films 311b, 321b, and 331b may have different patterns for each of the sub-pixels P1, P2, and P3. Specifically, in the first sub-pixel P1, the second reflective layer 311b may be formed only in the second region A2. In the second sub-pixel P2, the second reflective layer 321b may be formed in both the first area A1 and the second area A2. In the third sub-pixel P3, the second reflective layer 331b may be formed in both the first area A1 and the second area A2.

Then, the third reflective film 331c is patterned on the third sub-pixel P3 on the second reflective film 331b as shown in FIG. 8D. A third reflective layer may not be formed in the first sub-pixel P1 and the second sub-pixel P2. In the third sub-pixel P3, the third reflective layer 331c may be formed only in the first region A1.

The first reflective films 311a, 321a, and 331a, the second reflective films 311b, 321b, and 331b and the third reflective film 331c may be made of a reflective material.

Then, dielectric films 313, 323, and 333 are formed on the reflective electrodes 311, 321, and 331. More specifically, as shown in FIG. 8E, materials forming the dielectric films 313, 323, and 333 on the first reflective films 311a, 321a, 331a, the second reflective films 311b, 321b, 331b, and the third reflective films 331c Apply. The material forming the dielectric films 313, 323, and 333 may be a transparent material such as silicon oxide, silicon nitride, ITO, or IZO.

Then, the upper surfaces of the dielectric layers 313, 323, and 333 provided in each of the sub-pixels P1, P2, and P3 are formed at the same height through the etching process as shown in FIG. 8F. In FIG. 8F, the dielectric layers 313, 323, and 333 are etched in the region between the sub-pixels P1, P2, and P3 to expose the circuit element layer 200, but are not limited thereto. In another embodiment, the dielectric layers 313, 323, and 333 may also be formed in regions between the sub pixels P1, P2, and P3. In this case, the flat top surfaces of the dielectric films 313, 323, and 333 can be provided.

Then, the transparent electrodes 312, 322, and 332 are patterned for each of the sub-pixels P1, P2, and P3 on the dielectric layers 312, 322, and 332, as shown in FIG. 8G. The transparent electrodes 312, 322, and 332 may be made of a transparent conductive material (TCO) such as ITO and IZO that can transmit light.

Next, a reflective film 347 is formed (S703).

More specifically, as illustrated in FIG. 8H, a reflective layer 347 is patterned for each of the sub-pixels P1, P2, and P3 on the first electrodes 310, 320, and 330. The reflective layer 347 is formed on the edge regions of the first electrodes 310, 320, and 330. In this case, the region where the reflective layer 347 is formed may correspond to the region where the first electrodes 310, 320, 330 and the bank 345 overlap.

The reflective film 347 may be formed of a metal material having high reflectance, for example, aluminum (Al) or silver (Ag). The reflective film 347 may be thinly formed from 10 nm to 30 nm.

Next, the bank 345 is formed (S704).

More specifically, the bank 345 is formed on the reflective film 347 as shown in FIG. 8I. The bank 345 may also be formed in regions between the sub-pixels P1, P2, and P3.

The bank 345 may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or multiple films thereof, but is not limited thereto. The bank 345 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. .

Next, the light emitting layer 400 is formed (S705).

More specifically, as illustrated in FIG. 8J, the light emitting layer 400 is formed on the first electrodes 310, 320 and 330 and the bank 345. The emission layer 400 may be formed by a deposition process or a solution process. When the emission layer 400 is formed by a deposition process, it may be formed using evaporation.

The emission layer 400 may be a white emission layer that emits white light. In this case, the emission layer 400 may be a common layer commonly formed in the sub-pixels P1, P2, and P3.

Next, the second electrode 500 is formed (S706).

More specifically, the second electrode 500 is formed on the light emitting layer 400 as shown in FIG. 8K. The second electrode 500 may be formed by physical vapor deposition, such as sputtering. Alternatively, the second electrode 140 may be formed using evaporation.

The second electrode 500 may be formed of a semi-transmissive conductive material, such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). The second electrode 500 may be a cathode electrode.

Next, an encapsulation layer 600 is formed (S707).

More specifically, an encapsulation layer 600 is formed on the second electrode 500 as shown in FIG. 8L. In one embodiment, the encapsulation layer 600 may include a first inorganic layer, an organic layer, and a second inorganic layer. The first inorganic film is formed to cover the second electrode 500. The first inorganic film may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide. The first inorganic film may be deposited by CVD (Chemical Vapor Deposition) technique or ALD (Atomic Layer Deposition) technique, but is not limited thereto.

Then, an organic film is formed on the first inorganic film. The organic film may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

Then, a second inorganic film is formed on the organic film. The second inorganic film may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide. The second inorganic film may be deposited by CVD (Chemical Vapor Deposition) or ALD (Atomic Layer Deposition), but is not limited thereto.

Next, a color filter 700 is formed (S708).

More specifically, as shown in FIG. 8M, a first color filter CF1, a second color filter CF2, and a third color filter CF3 are formed on the encapsulation layer 600. The first color filter CF1 is disposed to correspond to the first pixel P1, the second color filter CF2 is disposed to the second pixel P2, and the third color filter CF3 is the third pixel ( P3). In this case, a black matrix BM may be further formed between the first color filter CF1, the second color filter CF2, and the third color filter CF3. The black matrix BM may be omitted.

9A to 9C relate to a display device according to another exemplary embodiment of the present invention, which relates to a head mounted display (HMD) device. 9A is a schematic perspective view, FIG. 9B is a schematic plan view of a VR (Virtual Reality) structure, and FIG. 9C is a schematic cross-sectional view of an Augmented Reality (AR) structure.

9A, the head mounted display device according to the present invention includes a storage case 10 and a head mounting band 30.

The storage case 10 houses components such as a display device, a lens array, and an eyepiece therein.

The head mounting band 30 is fixed to the storage case 10. The head mounting band 30 is illustrated to be formed so as to surround the top and both sides of the user's head, but is not limited thereto. The head-mounted band 30 is for fixing the head-mounted display to the user's head, and may be replaced with a frame or helmet-shaped structure.

As can be seen in Figure 9b, the VR (Virtual Reality) structure of the head-mounted display device according to the present invention, the left-eye display device 12 and the right-eye display device 11, the lens array 13, and the left eyepiece ( 20a) and the right-eye eyepiece 20b.

The left-eye display device 12, the right-eye display device 11, the lens array 13, and the left-eye eyepiece 20a and the right-eye eyepiece 20b are housed in the aforementioned storage case 10.

The display device 12 for the left eye and the display device 11 for the right eye may display the same image, in which case the user can watch the 2D image. Alternatively, the left-eye display device 12 may display a left-eye image and the right-eye display device 11 may display a right-eye image, in which case the user can view a stereoscopic image. Each of the display device 12 for the left eye and the display device 11 for the right eye may be formed of the display devices according to FIGS. 1 to 5 described above. At this time, in FIG. 1 to FIG. 5, an upper portion corresponding to a surface on which an image is displayed, for example, the color filter 700 faces the lens array 13.

The lens array 13 may be provided between the left eyepiece lens 20a and the left eye display device 12 while being spaced apart from the left eyepiece lens 20a and the left eye display device 12, respectively. That is, the lens array 13 may be positioned in front of the left-eye eyepiece 20a and behind the left-eye display 12. Further, the lens array 13 may be provided between the right-eye eye lens 20b and the right-eye display device 11 while being spaced apart from the right-eye eye lens 20b and the right-eye display device 11, respectively. That is, the lens array 13 may be positioned in front of the right-eye eyepiece lens 20b and behind the right-eye display device 11.

The lens array 13 may be a micro lens array. The lens array 13 may be replaced with a pin hole array. The image displayed on the display device 12 for the left eye or the display device 11 for the right eye due to the lens array 13 may be enlarged to the user.

The left eye LE of the user may be located in the left eyepiece 20a, and the right eye RE of the user may be located in the right eyepiece 20b.

As can be seen in Figure 9c, the head-mounted display device of the AR (Augmented Reality) structure according to the present invention, the left eye display device 12, the lens array 13, the left eyepiece 20a, the transmission reflector 14 , And a transmission window (15). For convenience, only the left eye configuration is shown in FIG. 9C, and the right eye configuration is the same as the left eye configuration.

The left-eye display device 12, the lens array 13, the left-eye eyepiece 20a, the transmissive reflecting portion 14, and the transmissive window 15 are housed in the aforementioned storage case 10.

The display device 12 for the left eye may be disposed on one side, for example, the upper side of the transmissive reflector 14 without obscuring the transmissive window 15. Accordingly, the left eye display device 12 may provide an image to the transmissive reflector 14 without obscuring the external background seen through the transmissive window 15.

The left eye display device 12 may be formed of the display devices according to FIGS. 1 to 5 described above. At this time, in FIG. 1 to FIG. 5, an upper portion corresponding to a surface on which an image is displayed, for example, the color filter 160 faces the transmissive reflector 14.

The lens array 13 may be provided between the left eyepiece 20a and the transmissive reflector 14.

The left eye of the user is located in the left eye eyepiece 20a.

The transmissive reflector 14 is disposed between the lens array 13 and the transmissive window 15. The transmissive reflector 14 may include a reflective surface 14a that transmits a portion of light and reflects another portion of light. The reflective surface 14a is formed such that the image displayed on the left eye display device 12 proceeds to the lens array 13. Accordingly, the user can see both the external background and the image displayed by the left eye display device 12 through the transparent layer 15. That is, since the user can view the virtual image and the background of the reality as a single image, augmented reality (AR) can be implemented.

The transmission layer 15 is disposed in front of the transmission reflection portion 14.

The embodiments of the present invention have been described in more detail with reference to the accompanying drawings, but the present invention is not necessarily limited to these embodiments, and may be variously modified without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of protection of the present invention should be interpreted by the claims, and all technical spirits within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

100: display device
110: substrate TFT: driving transistor
300: first electrode 345: bank
347: reflective film 400: light emitting layer
500: second electrode 600: sealing layer
700: color filter

Claims (15)

A substrate provided with a first sub-pixel, a second sub-pixel, and a third sub-pixel;
A first electrode provided on each of the first sub-pixel, the second sub-pixel and the third sub-pixel on the substrate and including a reflective electrode, a dielectric film and a transparent electrode;
A bank exposing a portion of the first electrode while covering an edge of the first electrode;
A light emitting layer provided on the first electrode;
It includes a second electrode provided on the light emitting layer,
The first electrode includes a first region where the bank is not formed and a second region where the bank is formed,
A first electrode provided in at least one of the first sub-pixel, the second sub-pixel, and the third sub-pixel has a different thickness of the reflective electrode in the first region and the second region. According to claim 1,
A display device having the same thickness in the second region of the reflective electrode provided in the first sub-pixel, the reflective electrode provided in the second sub-pixel, and the reflective electrode provided in the third sub-pixel. According to claim 1,
A display device having a different thickness in the first region of the reflective electrode provided in the first sub-pixel, the reflective electrode provided in the second sub-pixel, and the reflective electrode provided in the third sub-pixel. According to claim 1,
A display device further comprising a reflective layer provided between the first electrode and the bank. According to claim 4,
The reflective electrode provided in each of the first sub-pixel, the second sub-pixel, and the third sub-pixel is a display device in which the distance from the reflective film in the second region is set such that the light incident from the outside causes interference. According to claim 1,
In the first sub-pixel, light having a peak wavelength in a first wavelength band is emitted, and in the second sub-pixel, light having a peak wavelength in a second wavelength band is emitted, and the third sub-pixel is a peak wavelength in a third wavelength band. A display device that emits light. The method of claim 6,
The reflective electrode provided in the first sub-pixel is set such that the distance from the second electrode in the first region is greater than that of the light in the first wavelength band than the light in the other wavelength band.
The reflective electrode provided in the second sub-pixel is set such that the distance from the second electrode in the first region is emitted at a greater intensity than that of the second wavelength band.
The reflective electrode provided in the third sub-pixel is a display device in which a distance between the second electrodes in the first region is set so that light in the third wavelength band is emitted at a greater intensity than light in another wavelength band. According to claim 1,
A reflective device provided in any one of the first sub-pixel, the second sub-pixel, and the third sub-pixel has the same thickness in the first region and the second region. According to claim 1,
Each of the first electrode provided in the first sub-pixel, the first electrode provided in the second sub-pixel and the first electrode provided in the third sub-pixel has the same thickness in the first region and the second region. Display device. According to claim 1,
A display device having the same thickness as a first electrode provided in the first sub-pixel, a first electrode provided in the second sub-pixel, and a first electrode provided in the third sub-pixel. According to claim 1,
A display device having the same thickness as the transparent electrode provided in the first sub-pixel, the transparent electrode provided in the second sub-pixel, and the transparent electrode provided in the third sub-pixel. According to claim 1,
A display device having an upper surface of the dielectric layer provided in the first sub-pixel, the dielectric layer provided in the second sub-pixel, and the dielectric layer provided in the third sub-pixel are formed at the same height. According to claim 1,
The light emitting layer is a display device that emits white light. The method of claim 13,
A display device further comprising first, second and third color filters provided to correspond to each of the first to third sub-pixels on the second electrode. The method of claim 14,
And a black matrix provided at a boundary between the first color filter, the second color filter, and the third color filter.

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