KR20200078959A - COMPOSITTE INCLUDING SiC WHISKER GROWN ON SURFACE OF SiC FIBER AND METHOD FOR FABRICATING THE SAME - Google Patents

Abstract

One embodiment of the present invention relates to a composite comprising: a substrate including silicon carbide; and a silicon carbide whisker grown on the surface of the substrate containing the silicon carbide, and a method for fabricating the same, in which the silicon carbide whisker may be chemically bonded to the substrate including the silicon carbide. The whisker grows on a ceramic surface by a catalytic action of functional elements in the process of co-doping catalytic functional elements on a silicon carbide precursor polymer and converting into ceramic through heat treatment, so that the silicon carbide substrate and the silicon carbide whisker are chemically bonded to form a stable complex. In addition, according to the present invention, the shape, specific surface area, and growth degree of whiskers can be variously customized and controlled according to the intended use by adjusting process conditions such as the amount of doping catalyst to be added, heat treatment conditions, etc.

Description

A composite containing various types of silicon carbide whiskers grown on the surface of silicon carbide and a method for manufacturing the same {COMPOSITTE INCLUDING SiC WHISKER GROWN ON SURFACE OF SiC FIBER AND METHOD FOR FABRICATING THE SAME}

The present invention relates to a composite comprising a silicon carbide whisker having various forms, and more specifically, a silicon carbide surface stably complexed by uniformly growing silicon carbide whiskers of various types from the silicon carbide surface to form chemical bonds It relates to a composite comprising a silicon carbide whisker of various forms grown on and a method for manufacturing the same.

On the other hand, silicon carbide (SiC) is a representative non-oxide-based ceramic material, which is excellent in heat resistance, oxidation resistance, and chemical resistance at high temperatures, and can be used in extreme environments such as high temperature, high pressure or acidic atmosphere, and its importance becomes greater. have.

Silicon carbide can be used in various forms such as fibers, plates, porous bodies, etc. In particular, it is expected to be applied to catalysts and catalyst supports, high temperature insulating materials, diesel filter materials, etc. through differentiation of the structure or shape of fibers. . In particular, a filter material for extreme environments at high temperature, for example, a material that can be used in extreme environments where existing organic or inorganic materials are difficult to access, such as filtration recovery of acidic gas at high temperatures, is very likely. .

In general, silicon carbide fibers are produced by drying or wet spinning polycarbosilane ('PCS') into a fibrous form, followed by dissolving and heat-treating the polycarbosilane fibers.

According to the fiberization process, the fiber diameter, cross-sectional shape, and fiber shape can be variously changed. In addition, by controlling the infusible and heat treatment processes, the crystal structure of the silicon carbide fiber can be changed to amorphous, semi-crystalline, or completely crystalline.

In addition, a technique of forming a whisker on the surface of a silicon carbide fiber has been proposed in order to exhibit a more improved effect in various fields that can be newly applied as well as conventionally known uses.

Whisker (whisker) is a fine short-fiber crystal with few defects, and has a very high strength and a high specific surface area, and is thus promising as a reinforcing material for short fiber-reinforced composite materials. Whiskers were already recognized for metal whiskers such as copper and silver in the 1500s, and it was announced in 1952 that whiskers had strengths close to theoretical strength. Subsequently, research to use these strengths was continued, and only recently has mass production technology been established, such as silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), potassium titanate (K ₂ O·nTiO ₂ ), graphite, etc. It has been supplied as an industrial material. Recently, a short fibrous crystal is called a whisker, and the commercially available whisker has an aspect ratio of about 20-200.

For example, silicon carbide whiskers are needle-shaped single crystals with a large aspect ratio, and have excellent mechanical properties such as high strength and high stiffness close to the theoretical strength. Therefore, it is often used as a reinforcing agent when making composites with polymer, metal and ceramic substrates to improve various properties such as strength, toughness, abrasion resistance, and thermal conductivity.

As described above, whiskers are mainly used as whisker reinforced composite materials that utilize their mechanical properties, and can be typically classified into whisker reinforced metal (WRM), whisker reinforced ceramic (WRC), and whisker reinforced resin (WRP).

In WRM, the composite of silicon carbide whiskers and aluminum alloys has been studied, and has achieved remarkable improvement in terms of physical properties such as strength and elastic modulus (heat resistance, abrasion resistance, etc.), and silicon nitride whiskers are the same. Development is being progressed for the purpose of application to metal parts, etc. In WRC, it is possible to achieve improvement in terms of physical properties such as strength and fracture toughness by complexing with alumina, etc., and application to high-temperature structural materials, cutting tools, etc. is being investigated. In WRP, it is being put into practical use in leisure products, home appliances, office equipment, etc., by the combination with engineering plastics.

When a composite of a ceramic raw material and a whisker is required for various purposes such as a high specific surface area, it is common to manufacture a composite by simply mixing a ceramic raw material such as ceramic fiber or ceramic powder with a whisker of the same type or different types. .

According to this manufacturing method, it is difficult to uniformly mix and disperse the ceramic raw materials and whiskers, and it is difficult to physically and chemically combine the whiskers and ceramic raw materials, making it difficult to achieve stable complexation. Therefore, the manufactured ceramic/whisker composite does not have stability, and the whisker grows non-uniformly on the ceramic raw material, making it difficult to secure sufficient physical properties, and controlling the shape and specific surface area of the whisker in various ways according to the intended use. impossible.

An object of the present invention is to provide a composite comprising a silicon carbide whisker uniformly grown on a surface of silicon carbide and a method for manufacturing the same, in particular, doping a functional element that acts as a catalyst on a silicon carbide precursor polymer, and ceramic through heat treatment It is to provide a composite in which various types of silicon carbide whiskers are uniformly grown on a surface of silicon carbide by manufacturing whiskers on a ceramic surface by catalysis of a functional element in the process of converting to and providing a method for manufacturing the same.

One embodiment of the present invention for solving the above problems is a substrate comprising silicon carbide; And it may include a silicon carbide whisker grown on the surface of the substrate containing the silicon carbide, the silicon carbide whisker relates to a complex that can be chemically bonded to the substrate containing the silicon carbide.

In the above embodiment, the silicon carbide whisker may include a nanostructure having one or more shapes selected from the group consisting of spots, rods, and flowers. The specific surface area of the silicon carbide whisker may range from 1 m 2 /g to 3000 m 2 /g. The shape, specific surface area and amount of the silicon carbide whisker can be controlled by adjusting the amount of catalyst and heat treatment conditions added during the production of the composite. The substrate containing silicon carbide may have a form of fiber, hollow fiber, thin film, plate, porous body or 3D printing structure. The silicon carbide whisker may be chemically bound to a substrate containing silicon carbide by growing in a process in which the precursor forming the substrate containing silicon carbide is converted to ceramic.

In addition, another embodiment of the present invention for solving the above problem is a method of manufacturing a composite, the method comprising: doping a catalyst to a precursor of silicon carbide; And performing a heat treatment on the catalyst-doped silicon carbide precursor, wherein the composite comprises a silicon carbide substrate; And a silicon carbide whisker grown on the surface of the substrate including the silicon carbide.

In the above embodiment, the precursor of the silicon carbide may be a polymer containing Si and C, or a mixture of a polymer containing Si and a polymer containing C. The precursor of silicon carbide may be selected from the group consisting of polycarbosilane (PCS), polysiloxane, silazane, borosilane, silica sol, and mixtures thereof. The catalyst may include one or more selected from the group consisting of a transition metal catalyst, a noble metal catalyst and a noble like catalyst. The catalyst is at least one selected from the group consisting of transition metal catalysts including Al, Fe and Ni, precious metal catalysts including Pt, Pd and Ag, W ₂ C, precious metal-like catalysts including silicon carbide and WO ₃ It can contain. Doping the catalyst to the precursor of the silicon carbide may include mixing by adding a catalyst during or after synthesis of the precursor of the silicon carbide. The heat treatment may be performed at a temperature in the range of 1200 ~ 1600 ℃. In the step of performing heat treatment on the precursor of the catalyst-doped silicon carbide, a silicon carbide whisker grows in a process in which the precursor is converted to ceramic by performing heat treatment to chemically bond to a substrate containing the silicon carbide. It can contain. The silicon carbide whisker may include nanostructures having one or more shapes selected from the group consisting of spots, rods, and flowers. The shape, specific surface area and amount of the silicon carbide whisker can be controlled by controlling the amount of the doped catalyst and the heat treatment conditions. Before the step of performing a heat treatment on the catalyst-doped silicon carbide precursor, forming the catalyst-doped silicon carbide precursor in the form of a fiber, a hollow fiber, a thin film, a plate, a porous body, or a 3D printing structure. It may further include.

According to the present invention, whiskers are grown on the surface of the ceramic by catalytic action of the functional element in the process of complex doping the functional element acting as a catalyst on the silicon carbide precursor polymer and converting it to ceramic through heat treatment. Silicon whiskers can form chemical bonds to form stable complexes.

In addition, according to the present invention, by controlling process conditions such as the amount of doping catalyst to be added and heat treatment conditions, the shape, specific surface area and growth degree of whiskers can be variously customized and controlled according to the intended use.

In addition, according to the present invention, since the silicon carbide whisker grows uniformly on the surface of the silicon carbide substrate, it is possible to sufficiently secure the properties of a stable and uniform composite, and it is possible to significantly increase various properties required in various application fields.

1 is a view showing the shape and specific surface area of a composite according to an embodiment of the present invention.
2 is a view showing a method of manufacturing a composite according to an embodiment of the present invention.
Figure 3 is a view showing the microstructure of the composite according to an embodiment of the present invention, Figure 3a is W ₂ C 3 wt% is added, showing the microstructure of the composite prepared by heat treatment at a temperature of 1200 ℃, Figure 3b shows the microstructure of the composite prepared by adding 5 wt% of W ₂ C and heat treatment at a temperature of 1200° C., and FIG. 3c is prepared by adding 5 wt% of W ₂ C and heat treatment at a temperature of 1400° C. It shows the microstructure of the complex.
4 is a view showing the microstructure of the composite according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings in order to describe in detail that a person skilled in the art to which the present invention pertains can easily implement the technical spirit of the present invention. In the following description, many specific matters such as specific components are illustrated, which are provided to help a more comprehensive understanding of the present invention, and it is common knowledge in the art that the present invention can be practiced without these specific details. It will be obvious to those who have it. And, in the description of the present invention, if it is determined that a detailed description of related known functions or configurations may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted.

The composite according to an embodiment of the present invention includes a substrate comprising silicon carbide (SiC); And it may include a silicon carbide whisker grown on the surface of the substrate containing the silicon carbide, the silicon carbide whisker may be chemically bonded to the substrate containing the silicon carbide.

In the composite according to the above embodiment, the silicon carbide whisker grown on the surface of the substrate containing silicon carbide may form a chemical bond to form a stable composite. In addition, the silicon carbide whisker can be uniformly grown on the surface of the substrate containing silicon carbide and have various shapes, and thus can be suitably applied according to the intended use.

The substrate containing silicon carbide may be formed in a form suitable for the field to which the composite is applied. For example, the substrate comprising silicon carbide may have the form of a fiber, hollow fiber, thin film, plate, porous body or 3D printing structure.

The silicon carbide whisker may grow on the ceramic surface in the process of converting the precursor forming the substrate containing silicon carbide into ceramic. That is, in the process of heat treatment of the precursor of silicon carbide, the catalyst doped with the precursor forms a nano phase to catalyze while exhibiting catalytic properties, so that the silicon carbide whisker grows on the surface of the substrate containing silicon carbide. The silicon carbide whisker can form a stable chemical bond with the substrate containing silicon carbide.

Silicon carbide whiskers can take many forms. For example, the silicon carbide whisker may include nanostructures having one or more shapes selected from the group consisting of spots, rods, and flowers.

The silicon carbide whisker may have various specific surface areas, and the specific surface area of the silicon carbide whisker may vary depending on the shape and the like. For example, the specific surface area of the silicon carbide whisker may range from 1 m 2 /g to 3000 m 2 /g.

1 is a view showing the shape and specific surface area of a composite according to an embodiment of the present invention.

Referring to FIG. 1, the silicon carbide whisker formed on a substrate containing silicon carbide may have various forms, for example, spot (a), rod (b), and flower (c) shapes, depending on the shape. Surface area may vary. That is, the specific surface area of the silicon carbide whisker increases in the order of spot, rod, and flower.

In the above embodiment, the shape, specific surface area, growth degree and amount of silicon carbide whiskers can be controlled by controlling the amount of catalyst and heat treatment conditions added during the production of the composite. Accordingly, the composite according to the embodiment can be controlled by variously customizing the shape and specific surface area of whiskers according to individual conditions required in various application fields.

The silicon carbide whisker may be uniformly formed on the surface of the substrate containing silicon carbide, and may form a chemical bond with the substrate containing silicon carbide. Therefore, since the surface bonding strength is strengthened as compared to the complex of the prior art, which is difficult to form a physical/chemical bond, the stability of the complex is improved and physical properties can be improved accordingly.

In addition, the method of manufacturing a composite according to another embodiment of the present invention, doping the catalyst to the precursor of silicon carbide; And performing a heat treatment on the catalyst-doped silicon carbide precursor, wherein the composite comprises a silicon carbide substrate; And a silicon carbide whisker grown on the surface of the substrate including the silicon carbide.

First, the catalyst can be doped into a precursor of silicon carbide.

The precursor of silicon carbide may be a polymer containing Si and C or a mixture of a polymer containing Si and a polymer containing C.

In one embodiment, the precursor of silicon carbide may be selected from the group consisting of polycarbosilane (PCS), polysiloxane, silazane, borosilane, silica sol and mixtures thereof.

The catalyst is intended to catalyze the uniform growth of silicon carbide whiskers.

In one embodiment, the catalyst may include one or more selected from the group consisting of a transition metal catalyst, a noble metal catalyst, and a noble like catalyst.

In one embodiment, the catalyst is at least one selected from the group consisting of transition metal catalysts such as Al, Fe, Ni, precious metal catalysts such as Pt, Pd, Ag, and precious metal-like catalysts such as W ₂ C, SiC, and WO ₃ It can contain.

The doping of the catalyst to the precursor of silicon carbide is for uniformly mixing the catalyst in the precursor, and such a uniformly mixed catalyst can exhibit a catalytic characteristic by forming a nano phase in a subsequent heat treatment process.

In one embodiment, doping of the catalyst may be achieved by synthesizing a precursor of silicon carbide, followed by mixing by adding a catalyst to the precursor of silicon carbide.

For example, when a precursor of silicon carbide is synthesized and dissolved in a solvent, a catalyst may be added to the dissolving step to be doped into the precursor polymer.

In another embodiment, doping of the catalyst may be achieved by adding and mixing the catalyst during synthesis of the precursor of silicon carbide.

For example, when a precursor of silicon carbide is synthesized and used without dissolving in a solvent, the catalyst may be added to the precursor synthesis step to be doped into the precursor polymer.

Synthesis of precursors of silicon carbide is well known in the art, and in this embodiment, an appropriate one of known methods can be selected and used.

For example, a precursor of silicon carbide may be synthesized using a method of synthesizing polycarbosilane by using a porous metal oxide anodized from polydimethylsilane disclosed in Patent Publication No. 10-1015250 as a catalyst, and carbonization during synthesis By adding and mixing a catalyst for forming a silicon whisker, a polycarbosilane doped with the catalyst can be prepared.

The amount of the catalyst to be doped may be 0.5 wt% or more, preferably 1 wt% or more, based on the total weight of the precursor and catalyst of silicon carbide. When the amount of the catalyst is less than the above range, the catalytic action is insufficient, so that various types of nano whiskers may not be formed. The amount of the catalyst to be doped may have a special meaning with a lower limit for indicating catalysis, and an upper limit may not be particularly limited as long as it exhibits catalysis.

The amount of catalyst to be doped can affect the shape, specific surface area, growth rate and amount of silicon carbide whiskers contained in the composite. As the amount of the catalyst to be doped increases, the amount of silicon carbide whiskers formed on the surface of the substrate containing silicon carbide increases, and the specific surface area can be formed in a large form, and as the amount of the doped catalyst decreases, silicon carbide is included. The amount of silicon carbide whiskers formed on the surface of the substrate is reduced, and may be mainly formed in a small specific surface area.

Therefore, by appropriately controlling the amount of the catalyst to be doped in preparing the composite, along with other conditions, the silicon carbide whisker can be formed to have a suitable shape, degree of growth, and amount according to the purpose and use in the field to which the composite is applied. have.

In one embodiment, the catalyst-doped silicon carbide precursor may be formed in a predetermined form suitable for the application and use. For example, the catalyst-doped silicon carbide precursor may be formed in the form of a fiber, a hollow fiber, a thin film, a plate, a porous body, or a 3D printing structure.

The method of forming the precursor of silicon carbide in various forms can be achieved by selecting an appropriate method among methods known in the art.

For example, when polycarbosilane (PCS) is used as a precursor, it can be formed into a fibrous form by heating it to melt and spinning the molten polycarbosilane. At this time, the heating and melting temperature may be determined according to the melting point of the polycarbosilane, for example, when using a polycarbosilane having a molecular weight of about 2500 to 3500 in the range, it may be melted by heating to a temperature of about 200 to 240°C. .

At this time, the size, shape, etc. of the fiber can be adjusted by adjusting the spinning conditions.

In addition, precursors of silicon carbide may be formed to have various shapes, for example, fibers, hollow fibers, thin films, plates, porous bodies, or 3D printing structures using other methods known in the art.

Next, a heat treatment may be performed on the catalyst-doped silicon carbide precursor.

The heat treatment may be performed under an inert atmosphere at a temperature in the range of 1200 to 1600°C. When the heat treatment temperature is lower than 1200°C, the conversion of the precursor to ceramic may not be completely achieved, and the growth of silicon carbide whiskers may be non-uniform, and when it exceeds 1600°C, accelerated thermal decomposition of the formed silicon carbide substrate Due to the deterioration caused by the collapse of the shape of the substrate, it is impossible to use it as a composite.

Heat treatment conditions may affect the shape, specific surface area, degree of growth, and amount of silicon carbide whiskers contained in the composite, together with the amount of the catalyst to be doped as described above. The higher the heat treatment temperature, the higher the silicon carbide whisker formed on the surface of the substrate containing silicon carbide, and the lower the heat treatment temperature, the lower the growth rate of the silicon carbide whisker formed on the surface of the substrate containing silicon carbide.

Therefore, by appropriately controlling the heat treatment conditions during the composite production, along with other conditions, the silicon carbide whisker can be formed to have a suitable shape, growth degree and amount according to the purpose and use in the field to which the composite is applied.

By performing the heat treatment in this way, in the process of converting the catalyst-doped precursor to ceramic, the catalyst forms a nano phase to exert the catalytic properties, so that silicon carbide nano whiskers having various forms can be uniformly grown on the ceramic surface. have.

In such a composite, since the substrate containing silicon carbide and the silicon carbide nano whisker form a chemical bond, stability of the composite can be remarkably improved. In addition, the shape, specific surface area, amount, and degree of growth of silicon carbide nano whiskers grown on the surface of the substrate containing silicon carbide can be appropriately controlled by an easy method according to the application field of the composite, and thus can be widely applied to various applications. Can.

Hereinafter, the present invention will be described in more detail by examples. However, the following examples are only illustrative of the present invention, and the scope of the present invention is not limited to the following examples.

Example 1

Polycarbosilane (PCS) was doped with W ₂ C (tungsten sub carbide) 3 wt% or 5 wt%, respectively, as a catalyst. W ₂ C doping may be achieved by mixing W ₂ C in the synthesis of PCS, or by mixing W ₂ C in the synthesized PCS. PCS solution having a concentration of 30-50% was prepared by dissolving PCS doped with W ₂ C 3 wt% or 5 wt% in toluene. The PCS solution was electrospinned using a known method to form a fiber, and then oxidized and stabilized for 1 hour in an oven maintained at 200°C. The stabilized fibers were heat treated at 1200 to 1600° C. under an inert atmosphere, thereby preparing a composite in which silicon carbide whiskers were grown on the surface of the silicon carbide fibers.

The microstructure of the composite thus prepared was observed and is shown in FIGS. 3A to 3C. Figure 3a shows the microstructure of the composite prepared by adding 3 wt% of W ₂ C, heat treatment at a temperature of 1200 ℃, Figure 3b is prepared by adding 5 wt% of W ₂ C, heat treatment at a temperature of 1200 ℃ 3c shows the microstructure of the composite prepared by adding 5 wt% of W ₂ C and heat treatment at a temperature of 1400°C.

3A to 3C, it can be seen that various types of silicon carbide whiskers such as spots, rods, and flowers were uniformly grown on the surface of the silicon carbide fibers to form stable composites.

Example 2

As a catalyst, instead of 3 wt% or 5 wt% of W ₂ C, silicon carbide was deposited on the surface of the silicon carbide fiber by the same method as in Example 1, except that Ni 1 wt% or Fe 1 wt%, respectively, was used. A whisker-grown complex was prepared.

The microstructure of the composite thus prepared was observed and is shown in FIG. 4. The microstructure indicated by (a-1) in FIG. 4 is an enlarged view of the microstructure indicated by (a).

4, it can be confirmed that the silicon carbide whisker formed on the surface of the silicon carbide fiber has grown in various shapes.

The present invention is not limited by the above-described embodiments and the accompanying drawings, it is common in the technical field to which the present invention pertains that various substitutions, modifications and changes are possible without departing from the spirit of the present invention. It will be apparent to those who have knowledge.

Claims (17)

A substrate comprising silicon carbide (SiC); And
It comprises a silicon carbide whisker grown on the surface of the substrate containing the silicon carbide,
The silicon carbide whisker is chemically bound to a substrate containing the silicon carbide
Complex.
According to claim 1,
The silicon carbide whisker comprises a nanostructure having one or more forms selected from the group consisting of spots, rods, and flowers.
Complex.
According to claim 1,
The specific surface area of the silicon carbide whisker is in the range of 1 m 2 /g to 3000 m 2 /g.
Complex.
According to claim 1,
The shape, specific surface area and amount of the silicon carbide whisker are controlled by controlling the amount of catalyst and heat treatment conditions added during the production of the composite.
Complex.
According to claim 1,
The substrate containing silicon carbide has a form of fiber, hollow fiber, thin film, plate, porous body or 3D printing structure.
Complex.
According to claim 1,
The silicon carbide whisker is chemically bound to a substrate containing silicon carbide by growing in a process in which the precursor forming the substrate containing silicon carbide is converted to ceramic.
Complex.
As a method for manufacturing a complex,
The above method
Doping the catalyst with a precursor of silicon carbide; And
And performing a heat treatment on the catalyst-doped silicon carbide precursor,
The complex
A substrate comprising silicon carbide; And
Containing a silicon carbide whisker grown on the surface of the substrate containing the silicon carbide
Method of manufacturing a complex.
The method of claim 7,
The precursor of silicon carbide is a polymer containing Si and C, or a mixture of polymer containing Si and polymer containing C.
Method of manufacturing a complex.
The method of claim 7,
The precursor of silicon carbide is selected from the group consisting of polycarbosilane (PCS), polysiloxane, silazane, borosilane, silica sol, and mixtures thereof.
Method of manufacturing a complex.
The method of claim 7,
The catalyst includes at least one selected from the group consisting of a transition metal catalyst, a noble metal catalyst, and a noble like catalyst.
Method of manufacturing a complex.
The method of claim 10,
The catalyst is at least one selected from the group consisting of transition metal catalysts including Al, Fe and Ni, precious metal catalysts including Pt, Pd and Ag, W ₂ C, silicon carbide and noble metal like catalysts including WO ₃ Containing
Method of manufacturing a complex.
The method of claim 7,
The step of doping the catalyst to the precursor of silicon carbide includes mixing the precursor of silicon carbide during synthesis or after synthesis by adding a catalyst.
Method of manufacturing a complex.
The method of claim 7,
The heat treatment is performed at a temperature in the range of 1200 ~ 1600 ℃
Method of manufacturing a complex.
The method of claim 7,
In the step of performing heat treatment on the precursor of the catalyst-doped silicon carbide, a silicon carbide whisker grows in a process in which the precursor is converted to ceramic by performing heat treatment to chemically bond to a substrate containing the silicon carbide. Containing
Method of manufacturing a complex.
The method of claim 7,
The silicon carbide whisker comprises a nanostructure having one or more forms selected from the group consisting of spots, rods, and flowers.
Method of manufacturing a complex.
The method of claim 7,
The shape, specific surface area and amount of the silicon carbide whisker are controlled by controlling the amount of the doped catalyst and the heat treatment conditions.
Method of manufacturing a complex.
The method of claim 7,
Before the step of performing a heat treatment on the catalyst-doped silicon carbide precursor, forming the catalyst-doped silicon carbide precursor in the form of a fiber, a hollow fiber, a thin film, a plate, a porous body, or a 3D printing structure. More included
Method of manufacturing a complex.

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