KR20200078683A - Azadibenzofurans for electronic applications - Google Patents
Azadibenzofurans for electronic applications Download PDFInfo
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- KR20200078683A KR20200078683A KR1020207018021A KR20207018021A KR20200078683A KR 20200078683 A KR20200078683 A KR 20200078683A KR 1020207018021 A KR1020207018021 A KR 1020207018021A KR 20207018021 A KR20207018021 A KR 20207018021A KR 20200078683 A KR20200078683 A KR 20200078683A
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- KR
- South Korea
- Prior art keywords
- group
- formula
- alkyl
- substituted
- aryl
- Prior art date
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- 150000001875 compounds Chemical class 0.000 claims abstract description 190
- -1 Phosphorus compound Chemical class 0.000 claims description 121
- 125000003118 aryl group Chemical group 0.000 claims description 68
- 125000000217 alkyl group Chemical group 0.000 claims description 50
- 229910052757 nitrogen Inorganic materials 0.000 claims description 40
- 125000006702 (C1-C18) alkyl group Chemical group 0.000 claims description 32
- 125000001072 heteroaryl group Chemical group 0.000 claims description 32
- 125000001424 substituent group Chemical group 0.000 claims description 16
- 125000003545 alkoxy group Chemical group 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 230000000007 visual effect Effects 0.000 claims description 13
- 229910052794 bromium Inorganic materials 0.000 claims description 11
- 125000000732 arylene group Chemical group 0.000 claims description 8
- 125000005549 heteroarylene group Chemical group 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 229910052740 iodine Inorganic materials 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 108091008695 photoreceptors Proteins 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 103
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000003595 spectral effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 172
- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 description 51
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 45
- 239000004020 conductor Substances 0.000 description 35
- 239000000543 intermediate Substances 0.000 description 33
- 239000000203 mixture Substances 0.000 description 33
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 32
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 description 32
- 125000005842 heteroatom Chemical group 0.000 description 31
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 27
- 230000005525 hole transport Effects 0.000 description 26
- 239000000126 substance Substances 0.000 description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 24
- 125000004432 carbon atom Chemical group C* 0.000 description 24
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 24
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical compound C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 description 23
- 239000011159 matrix material Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 239000003446 ligand Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- 125000000524 functional group Chemical group 0.000 description 19
- 238000002347 injection Methods 0.000 description 19
- 239000007924 injection Substances 0.000 description 19
- 238000003786 synthesis reaction Methods 0.000 description 19
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 18
- 230000032258 transport Effects 0.000 description 18
- 239000007983 Tris buffer Substances 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 12
- 125000005551 pyridylene group Chemical group 0.000 description 12
- 229910052783 alkali metal Inorganic materials 0.000 description 11
- 239000012044 organic layer Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000011541 reaction mixture Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 150000002739 metals Chemical class 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- 229910052717 sulfur Inorganic materials 0.000 description 10
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- 239000002585 base Substances 0.000 description 9
- 125000000623 heterocyclic group Chemical group 0.000 description 9
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 9
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 8
- 150000001340 alkali metals Chemical class 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 150000004826 dibenzofurans Chemical class 0.000 description 8
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 8
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- NXQGGXCHGDYOHB-UHFFFAOYSA-L cyclopenta-1,4-dien-1-yl(diphenyl)phosphane;dichloropalladium;iron(2+) Chemical compound [Fe+2].Cl[Pd]Cl.[CH-]1C=CC(P(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1.[CH-]1C=CC(P(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 NXQGGXCHGDYOHB-UHFFFAOYSA-L 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 125000005595 acetylacetonate group Chemical group 0.000 description 6
- VBXDEEVJTYBRJJ-UHFFFAOYSA-N diboronic acid Chemical compound OBOBO VBXDEEVJTYBRJJ-UHFFFAOYSA-N 0.000 description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 6
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 6
- 125000005576 pyrimidinylene group Chemical group 0.000 description 6
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 6
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 5
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 5
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 5
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 5
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 5
- PCLIMKBDDGJMGD-UHFFFAOYSA-N N-bromosuccinimide Chemical compound BrN1C(=O)CCC1=O PCLIMKBDDGJMGD-UHFFFAOYSA-N 0.000 description 5
- 229960000583 acetic acid Drugs 0.000 description 5
- 239000008346 aqueous phase Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 239000012074 organic phase Substances 0.000 description 5
- MQZFZDIZKWNWFX-UHFFFAOYSA-N osmium(2+) Chemical compound [Os+2] MQZFZDIZKWNWFX-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 125000000714 pyrimidinyl group Chemical group 0.000 description 5
- 238000010992 reflux Methods 0.000 description 5
- 238000007363 ring formation reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000725 suspension Substances 0.000 description 5
- XOYZGLGJSAZOAG-UHFFFAOYSA-N 1-n,1-n,4-n-triphenyl-4-n-[4-[4-(n-[4-(n-phenylanilino)phenyl]anilino)phenyl]phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 XOYZGLGJSAZOAG-UHFFFAOYSA-N 0.000 description 4
- LZHVTCXAXYYCIF-UHFFFAOYSA-N 2-n',2-n',7-n',7-n'-tetrakis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC=CC=C4C4=CC=CC=C43)C3=CC(=CC=C3C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 LZHVTCXAXYYCIF-UHFFFAOYSA-N 0.000 description 4
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 4
- WPUSEOSICYGUEW-UHFFFAOYSA-N 4-[4-(4-methoxy-n-(4-methoxyphenyl)anilino)phenyl]-n,n-bis(4-methoxyphenyl)aniline Chemical compound C1=CC(OC)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 WPUSEOSICYGUEW-UHFFFAOYSA-N 0.000 description 4
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 4
- JRNVZBWKYDBUCA-UHFFFAOYSA-N N-chlorosuccinimide Chemical compound ClN1C(=O)CCC1=O JRNVZBWKYDBUCA-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000005840 aryl radicals Chemical class 0.000 description 4
- 230000031709 bromination Effects 0.000 description 4
- 238000005893 bromination reaction Methods 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 125000005566 carbazolylene group Chemical group 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 230000026030 halogenation Effects 0.000 description 4
- 238000005658 halogenation reaction Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- ZCSHNCUQKCANBX-UHFFFAOYSA-N lithium diisopropylamide Chemical compound [Li+].CC(C)[N-]C(C)C ZCSHNCUQKCANBX-UHFFFAOYSA-N 0.000 description 4
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 4
- 235000019341 magnesium sulphate Nutrition 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 4
- 235000011056 potassium acetate Nutrition 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- LYKXFSYCKWNWEZ-UHFFFAOYSA-N pyrazino[2,3-f][1,10]phenanthroline-2,3-dicarbonitrile Chemical compound N1=CC=CC2=C(N=C(C(C#N)=N3)C#N)C3=C(C=CC=N3)C3=C21 LYKXFSYCKWNWEZ-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 125000006413 ring segment Chemical group 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 125000005558 triazinylene group Chemical group 0.000 description 4
- XESMNQMWRSEIET-UHFFFAOYSA-N 2,9-dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC(C=2C=C3C=CC=CC3=CC=2)=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=C(C=3C=C4C=CC=CC4=CC=3)N=C21 XESMNQMWRSEIET-UHFFFAOYSA-N 0.000 description 3
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 3
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 3
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 3
- AOQKGYRILLEVJV-UHFFFAOYSA-N 4-naphthalen-1-yl-3,5-diphenyl-1,2,4-triazole Chemical compound C1=CC=CC=C1C(N1C=2C3=CC=CC=C3C=CC=2)=NN=C1C1=CC=CC=C1 AOQKGYRILLEVJV-UHFFFAOYSA-N 0.000 description 3
- RFVBBELSDAVRHM-UHFFFAOYSA-N 9,10-dinaphthalen-2-yl-2-phenylanthracene Chemical compound C1=CC=CC=C1C1=CC=C(C(C=2C=C3C=CC=CC3=CC=2)=C2C(C=CC=C2)=C2C=3C=C4C=CC=CC4=CC=3)C2=C1 RFVBBELSDAVRHM-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 3
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- JYZIHLWOWKMNNX-UHFFFAOYSA-N benzimidazole Chemical compound C1=C[CH]C2=NC=NC2=C1 JYZIHLWOWKMNNX-UHFFFAOYSA-N 0.000 description 3
- 150000001556 benzimidazoles Chemical class 0.000 description 3
- 150000001642 boronic acid derivatives Chemical class 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000012043 crude product Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012954 diazonium Substances 0.000 description 3
- 150000001989 diazonium salts Chemical class 0.000 description 3
- 125000005509 dibenzothiophenyl group Chemical group 0.000 description 3
- HASCQPSFPAKVEK-UHFFFAOYSA-N dimethyl(phenyl)phosphine Chemical compound CP(C)C1=CC=CC=C1 HASCQPSFPAKVEK-UHFFFAOYSA-N 0.000 description 3
- 239000003480 eluent Substances 0.000 description 3
- 238000003818 flash chromatography Methods 0.000 description 3
- 239000012362 glacial acetic acid Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 125000001041 indolyl group Chemical group 0.000 description 3
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- NKVDKFWRVDHWGC-UHFFFAOYSA-N iridium(3+);1-phenylisoquinoline Chemical compound [Ir+3].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 NKVDKFWRVDHWGC-UHFFFAOYSA-N 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- AFRJJFRNGGLMDW-UHFFFAOYSA-N lithium amide Chemical class [Li+].[NH2-] AFRJJFRNGGLMDW-UHFFFAOYSA-N 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- CUONGYYJJVDODC-UHFFFAOYSA-N malononitrile Chemical compound N#CCC#N CUONGYYJJVDODC-UHFFFAOYSA-N 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012452 mother liquor Substances 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JGOAZQAXRONCCI-SDNWHVSQSA-N n-[(e)-benzylideneamino]aniline Chemical compound C=1C=CC=CC=1N\N=C\C1=CC=CC=C1 JGOAZQAXRONCCI-SDNWHVSQSA-N 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- LBFXFIPIIMAZPK-UHFFFAOYSA-N n-[4-[4-(n-phenanthren-9-ylanilino)phenyl]phenyl]-n-phenylphenanthren-9-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C2=CC=CC=C2C=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C3=CC=CC=C3C=2)C=C1 LBFXFIPIIMAZPK-UHFFFAOYSA-N 0.000 description 1
- POSMSOVYCXWGBM-UHFFFAOYSA-N n-[5,5-dimethyl-4-[4-(n-naphthalen-1-ylanilino)phenyl]cyclohexa-1,3-dien-1-yl]-n-phenylnaphthalen-1-amine Chemical compound CC1(C)CC(N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)=CC=C1C(C=C1)=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 POSMSOVYCXWGBM-UHFFFAOYSA-N 0.000 description 1
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- 238000006396 nitration reaction Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000010534 nucleophilic substitution reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- CBHCDHNUZWWAPP-UHFFFAOYSA-N pecazine Chemical compound C1N(C)CCCC1CN1C2=CC=CC=C2SC2=CC=CC=C21 CBHCDHNUZWWAPP-UHFFFAOYSA-N 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003444 phase transfer catalyst Substances 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-M picolinate Chemical compound [O-]C(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-M 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229960002429 proline Drugs 0.000 description 1
- 125000000561 purinyl group Chemical group N1=C(N=C2N=CNC2=C1)* 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 description 1
- 229910000367 silver sulfate Inorganic materials 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- DKWSBNMUWZBREO-UHFFFAOYSA-N terbium Chemical compound [Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb][Tb] DKWSBNMUWZBREO-UHFFFAOYSA-N 0.000 description 1
- IOGXOCVLYRDXLW-UHFFFAOYSA-N tert-butyl nitrite Chemical compound CC(C)(C)ON=O IOGXOCVLYRDXLW-UHFFFAOYSA-N 0.000 description 1
- 239000012414 tert-butyl nitrite Substances 0.000 description 1
- 150000003513 tertiary aromatic amines Chemical class 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- NLDYACGHTUPAQU-UHFFFAOYSA-N tetracyanoethylene Chemical group N#CC(C#N)=C(C#N)C#N NLDYACGHTUPAQU-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- GKTQKQTXHNUFSP-UHFFFAOYSA-N thieno[3,4-c]pyrrole-4,6-dione Chemical compound S1C=C2C(=O)NC(=O)C2=C1 GKTQKQTXHNUFSP-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000687 transition metal group alloy Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- IGNTWNVBGLNYDV-UHFFFAOYSA-N triisopropylphosphine Chemical compound CC(C)P(C(C)C)C(C)C IGNTWNVBGLNYDV-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D491/00—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00
- C07D491/02—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains two hetero rings
- C07D491/04—Ortho-condensed systems
- C07D491/044—Ortho-condensed systems with only one oxygen atom as ring hetero atom in the oxygen-containing ring
- C07D491/048—Ortho-condensed systems with only one oxygen atom as ring hetero atom in the oxygen-containing ring the oxygen-containing ring being five-membered
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
- C07D487/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D491/00—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00
- C07D491/12—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains three hetero rings
- C07D491/14—Ortho-condensed systems
- C07D491/147—Ortho-condensed systems the condensed system containing one ring with oxygen as ring hetero atom and two rings with nitrogen as ring hetero atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
- C07F7/0812—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring
- C07F7/0814—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring said ring is substituted at a C ring atom by Si
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1007—Non-condensed systems
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
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- Chemical & Material Sciences (AREA)
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- Electroluminescent Light Sources (AREA)
Abstract
본 발명은, 벤즈이미다조[1,2-a]벤즈이미다조-5-일 및/또는 벤즈이미다조[1,2-a]벤즈이미다조-2,5-일렌 기에 의해 치환되고, 치환기 B1, B2, B3, B4, B5, B6, B7 및 B8 중 적어도 1개는 N을 나타내는 것을 특징으로 하는 화학식 (I)의 화합물; 그의 제조 방법; 및 전자 장치, 특히 전계발광 장치에서의 그의 용도에 관한 것이다. 전계발광 장치에서 인광 방출체를 위한 호스트 물질로서 사용되는 경우에, 화학식 (I)의 화합물은 전계발광 장치의 개선된 효율, 안정성, 제조성 또는 스펙트럼 특성을 제공할 수 있다.The present invention is substituted by benzimidazo[1,2-a]benzimidazo-5-yl and/or benzimidazo[1,2-a]benzimidazo-2,5-ylene group, substituent B Formulas characterized in that at least one of 1 , B 2 , B 3 , B 4 , B 5 , B 6 , B 7 and B 8 represents N Compound of (I); Its manufacturing method; And its use in electronic devices, particularly electroluminescent devices. When used as a host material for a phosphorescent emitter in an electroluminescent device, the compound of formula (I) may provide improved efficiency, stability, manufacturability or spectral properties of the electroluminescent device.
Description
본 발명은 화학식 (I)의 화합물, 그의 제조 방법, 및 전자 장치, 특히 전계발광 장치에서의 그의 용도에 관한 것이다. 화학식 (I)의 화합물은 전계발광 장치에서 정공 수송 물질로서 사용되는 경우에, 전계발광 장치의 개선된 효율, 안정성, 제조성 또는 스펙트럼 특성을 제공할 수 있다.The present invention relates to compounds of formula (I), methods for their preparation, and their use in electronic devices, in particular electroluminescent devices. When used as a hole transport material in an electroluminescent device, the compound of formula (I) can provide improved efficiency, stability, manufacturability or spectral properties of the electroluminescent device.
문헌 [Khan, Misbahul Ain; Ribeiro, Vera Lucia Teixeira, Pakistan Journal of Scientific and Industrial Research 43 (2000) 168-170]은 1-(o-니트로페닐)- 및 1-(o-아지도페닐)벤즈이미다졸의 트리알킬 포스파이트-유도된 탈산소화 및 열분해에 의한 벤즈이미다조[1,2-a]벤즈이미다졸 의 합성을 기재하고 있다.See Khan, Misbahul Ain; Ribeiro, Vera Lucia Teixeira, Pakistan Journal of Scientific and Industrial Research 43 (2000) 168-170, is a trialkyl phosphite of 1-(o-nitrophenyl)- and 1-(o-azidophenyl)benzimidazole- Benzimidazole[1,2-a]benzimidazole by induced deoxygenation and thermal decomposition Synthesis of is described.
문헌 [Pedro Molina et al. Tetrahedron (1994) 10029-10036]은 비스(2-아미노페닐)아민으로부터 유래된 비스(이미노포스포란)과 2 당량의 이소시아네이트의 아자 비티히(Wittig)-유형 반응이 벤즈이미다조[1,2,a]벤즈이미다졸 유도체를 직접 제공하는 것으로 보고하고 있다.Pedro Molina et al. Tetrahedron (1994) 10029-10036] is a Witztig-type reaction of bis(iminophosphorans) derived from bis(2-aminophenyl)amine with 2 equivalents of isocyanate, Benzimidazo[1,2 ,a] It has been reported to provide benzimidazole derivatives directly.
문헌 [Kolesnikova, I. V.; Zhurnal Organicheskoi Khimii 25 (1989) 1689-95]은 5H-벤즈이미다조[1,2-a]벤즈이미다졸 1,2,3,4,7,8,9,10-옥타플루오로-5-(2,3,4,5,6-펜타플루오로페닐)의 합성을 기재하고 있다.See Kolesnikova, I. V.; Zhurnal Organicheskoi Khimii 25 (1989) 1689-95] is 5H-benzimidazole[1,2-a]benzimidazole 1,2,3,4,7,8,9,10-octafluoro-5-( 2,3,4,5,6-pentafluorophenyl).
문헌 [Achour, Reddouane; Zniber, Rachid, Bulletin des Societes Chimiques Belges 96 (1987) 787-92]은 벤즈이미다졸리논 유도체로부터 제조한 벤즈이미다조벤즈이미다졸 의 합성을 기재하고 있다.Achour, Reddouane; Zniber, Rachid, Bulletin des Societes Chimiques Belges 96 (1987) 787-92] is a benzimidazenzobenzimidazole prepared from a benzimidazolinone derivative. Synthesis of is described.
문헌 [Hubert, Andre J.; Reimlinger, Hans, Chemische Berichte 103 (1970) 2828-35]은 벤즈이미다조벤즈이미다졸 의 합성을 기재하고 있다.See Hubert, Andre J.; Reimlinger, Hans, Chemische Berichte 103 (1970) 2828-35] is benzimidazobenzimidazole Synthesis of is described.
WO2011160757은 애노드, 캐소드, 및 화학식 WO2011160757 is an anode, a cathode, and a chemical formula
의 화합물 (여기서, X는 단일 결합일 수 있고, L은 2가 기일 수 있음)을 함유하는 적어도 1개의 유기 층을 포함하는 전자 장치에 관한 것이다. 하기 4H-이미다조[1,2-a]이미다졸 화합물이 명시적으로 개시되어 있다: It relates to an electronic device comprising at least one organic layer containing a compound, wherein X may be a single bond, L may be a divalent group. The following 4H-imidazo[1,2-a]imidazole compounds are explicitly disclosed:
문헌 [X. Wang et al. Org. Lett. 14 (2012) 452-455]은 화학식 의 화합물에 대한 고효율 구리-촉매화 합성에 대해 개시하고 있으며, 여기서 화학식 의 화합물을 승온에서 m-크실렌 중 아세트산구리 (Cu(OAc)2)/PPh3/1,10-페나트롤린/아세트산나트륨 및 산소 (1 atm)의 존재 하에 반응시킨다 [웹 상에 공개됨: 2011년 12월 29일]. 특히, 하기 화합물이 기재된 합성 방법에 의해 제조될 수 있다:[X. Wang et al. Org. Lett. 14 (2012) 452-455] is a chemical formula High-efficiency copper-catalyzed synthesis for compounds of The compound of is reacted at elevated temperature in the presence of copper acetate (Cu(OAc) 2 )/PPh 3 /1,10-phenatroline/sodium acetate and oxygen (1 atm) in m-xylene [published on the web: 2011 December 29]. In particular, the following compounds can be prepared by the synthetic methods described:
WO2012/130709는 4H-이미다조 [1,2-a]이미다졸, , 예컨대 예를 들어 , 그의 제조 방법, 및 전자 장치, 특히 전계발광 장치에서의 그의 용도에 관한 것이다.WO2012/130709 is 4H-imidazole [1,2-a]imidazole, For example, , Its manufacturing method, and its use in electronic devices, particularly electroluminescent devices.
WO2013/068376은 화학식 (여기서, X6은 -N=이고 X7은 -NR6-이거나, 또는 X7은 =N-이고 X6은 -NR6-이고, R6은 화학식 의 기임)의 4H-이미다조[1,2-a]이미다졸; 그의 제조 방법; 및 전자 장치, 특히 전계발광 장치에서의 그의 용도를 기재하고 있다.WO2013/068376 is the chemical formula (Where X 6 is -N= and X 7 is -NR 6 -, or X 7 is =N- and X 6 is -NR 6 -, and R 6 is the formula Of 4)-imidazo[1,2-a]imidazole); Its manufacturing method; And its use in electronic devices, particularly electroluminescent devices.
PCT/EP2013/064395는 화학식 의 화합물, 그의 제조 방법, 및 전자 장치, 특히 전계발광 장치에서의 그의 용도에 관한 것이다. 2,5-이치환된 벤즈이미다조[1,2-a]벤즈이미다졸 유도체가 인광 방출체를 위한 적합한 정공 수송 물질 또는 호스트 물질이다.PCT/EP2013/064395 is the chemical formula Compounds, methods for their preparation, and their use in electronic devices, in particular electroluminescent devices. The 2,5-disubstituted benzimidazole[1,2-a]benzimidazole derivatives are suitable hole transport materials or host materials for phosphorescent emitters.
US20090134784는 카르바졸-함유 화합물을 제공한다. 특히, 화합물은 비대칭 구조를 갖는 올리고카르바졸-함유 화합물이다. 화합물은 아자디벤조푸라닐에 의해 치환될 수 있고, 유기 발광 장치의 방출 층에서 호스트로서 유용하다.US20090134784 provides carbazole-containing compounds. In particular, the compound is an oligocarbazole-containing compound having an asymmetric structure. The compound can be substituted with azadibenzofuranyl, and is useful as a host in the emitting layer of an organic light emitting device.
WO2010028262는 백색 인광 유기 발광 장치에 관한 것이다. 하기 화합물 은 호스트 및 여기자 차단 물질로서 사용된다.WO2010028262 relates to a white phosphorescent organic light emitting device. The following compound Is used as a host and exciton blocking material.
US20100187984는 화학식 (여기서, X1 및 X2 중 하나는 질소이고, X1 및 X2 중 나머지는 탄소이고, Y는 S 또는 O임)을 갖는 아미노-아릴티오 피리딘 중간체의 아세트산 용액을 tBuONO로 처리하여 화학식 (여기서, R1 및 R2는 모노, 디, 트리 또는 테트라 치환기를 나타낼 수 있고; R1은 수소, 알킬, 아릴, 헤테로아릴 및 할라이드로 이루어진 군으로부터 선택되고; R2는 수소, 알킬, 아릴 및 할라이드로 이루어진 군으로부터 선택됨)을 갖는 아자 복합체를 제조하는 것을 포함하는, 아자-디벤조티오펜 화합물 또는 아자-디벤조푸란 화합물을 제조하는 방법을 개시하고 있다. US20100187984에 개시된 아자-디벤조티오펜 및 아자-디벤조푸란 화합물은 OLED에서 호스트로서 사용된다.US20100187984 is the chemical formula The acetic acid solution of the amino-arylthiopyridine intermediate having (where one of X 1 and X 2 is nitrogen, the other of X 1 and X 2 is carbon, and Y is S or O) is treated with tBuONO to formula (Where R 1 and R 2 may represent a mono, di, tri or tetra substituent; R 1 is selected from the group consisting of hydrogen, alkyl, aryl, heteroaryl and halide; R 2 is hydrogen, alkyl, aryl And aza complexes selected from the group consisting of halides), and methods for preparing aza-dibenzothiophene compounds or aza-dibenzofuran compounds. The aza-dibenzothiophene and aza-dibenzofuran compounds disclosed in US20100187984 are used as hosts in OLEDs.
또한, 아자-디벤조푸라닐 치환된 화합물 및 OLED에서의 그의 용도에 관하여 WO2012090967, WO2011137072, WO2010090077, WO2009060780, WO2009060757, JP2011084531 및 JP2008074939를 참조한다.See also WO2012090967, WO2011137072, WO2010090077, WO2009060780, WO2009060757, JP2011084531 and JP2008074939 for aza-dibenzofuranyl substituted compounds and their use in OLEDs.
상기 참고문헌 중 어떠한 것도 벤즈이미다조[1,2-a]벤즈이미다조-5-일 치환된 아자-디벤조푸란 화합물을 개시하고 있지 않다.None of the above references discloses aza-dibenzofuran compounds which are benzimidazo[1,2-a]benzimidazo-5-yl substituted.
이러한 개발에도 불구하고, 전계발광 장치의 개선된 효율, 안전성, 제조성 및/또는 스펙트럼 특성을 제공하기 위한 신규 정공 수송 물질을 포함하는 유기 발광 장치에 대한 필요성은 여전히 존재한다.Despite this development, there remains a need for an organic light emitting device comprising a novel hole transport material to provide improved efficiency, safety, manufacturability and/or spectral properties of the electroluminescent device.
따라서, 본 발명의 목적은, 상기 언급된 선행 기술과 관련하여, OLED에 사용하기에 적합한 추가의 물질 및 유기 전자장치에서의 추가의 용도를 제공하는 것이다. 보다 특히, OLED에 사용하기 위한 정공 수송 물질, 전자/여기자 차단제 물질 및 매트릭스 물질을 제공하는 것이 가능해야 한다. 물질은 적어도 하나의 인광 방출체, 특히 적어도 하나의 녹색 방출체 또는 적어도 하나의 청색 방출체를 포함하는 OLED에 특히 적합해야 한다. 또한, 물질은 OLED의 우수한 효율, 우수한 작동 수명 및 열 응력에 대한 높은 안정성, 및 낮은 사용 및 작동 전압을 보장하는 OLED를 제공하기에 적합해야 한다.Accordingly, it is an object of the present invention to provide additional materials suitable for use in OLEDs and further uses in organic electronics, in connection with the aforementioned prior art. More particularly, it should be possible to provide hole transport materials, electron/exciter blocker materials and matrix materials for use in OLEDs. The material should be particularly suitable for OLEDs comprising at least one phosphorescent emitter, in particular at least one green emitter or at least one blue emitter. In addition, the material must be suitable to provide an OLED that guarantees the OLED's excellent efficiency, good operating life and high stability against thermal stress, and low use and operating voltage.
벤즈이미다조[1,2-a]벤즈이미다조-5-일 기 및/또는 벤즈이미다조[1,2-a]벤즈이미다조-2,5-일렌 기로 치환된 특정 아자-디벤조푸란 유도체는 유기-전계발광 장치에 사용하기에 적합한 것으로 밝혀졌다. 특히, 상기 유도체는 우수한 효율 및 내구성을 갖는 인광 방출체에 적합한 정공 수송 물질 또는 호스트 물질이다.Certain aza-dibenzofuran derivatives substituted with benzimidazo[1,2-a]benzimidazo-5-yl groups and/or benzimidazo[1,2-a]benzimidazo-2,5-ylene groups Has been found to be suitable for use in organic-electroluminescent devices. In particular, the derivative is a hole transport material or host material suitable for a phosphorescence emitter having excellent efficiency and durability.
상기 목적은 하기 화학식 (I)의 화합물에 의해 해결되었다.This object was solved by the compound of formula (I).
(I) (I)
상기 식에서,In the above formula,
B1은 N 또는 CR81이고,B 1 is N or CR 81 ,
B2는 N 또는 CR82이고,B 2 is N or CR 82 ,
B3은 N 또는 CR83이고,B 3 is N or CR 83 ,
B4는 N 또는 CR84이고,B 4 is N or CR 84 ,
B5는 N 또는 CR85이고,B 5 is N or CR 85 ,
B6은 N 또는 CR86이고,B 6 is N or CR 86 ,
B7은 N 또는 CR87이고,B 7 is N or CR 87 ,
B8은 N 또는 CR88이고,B 8 is N or CR 88 ,
R81, R82, R83, R84, R85, R86, R87 및 R88은 서로 독립적으로 H, 임의로 E에 의해 치환될 수 있고/거나 D가 개재될 수 있는 C1-C25알킬 기; G에 의해 임의로 치환될 수 있는 C6-C24아릴 기, G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기; 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고,R 81 , R 82 , R 83 , R 84 , R 85 , R 86 , R 87 and R 88 are independently of each other C 1 -C 25 which may be optionally substituted by H, and/or D may be interposed. Alkyl groups; A C 6 -C 24 aryl group optionally substituted by G, a C 2 -C 30 heteroaryl group optionally substituted by G; Or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ,
o는 0 또는 1이고, p는 0 또는 1이고, q는 0 또는 1이고, r은 0 또는 1이고,o is 0 or 1, p is 0 or 1, q is 0 or 1, r is 0 or 1,
A1, A2, A3 및 A4는 서로 독립적으로 G에 의해 임의로 치환될 수 있는 C6-C24아릴렌 기, 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴렌 기이고;A 1 , A 2 , A 3 and A 4 are independently of each other a C 6 -C 24 arylene group which may be optionally substituted by G, or a C 2 -C 30 heteroarylene group which may be optionally substituted by G ego;
R16은 -NR10R11, 또는 -Si(R12)(R13)(R14), G에 의해 임의로 치환될 수 있는 C6-C24아릴 기; 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기이고;R 16 is —NR 10 R 11 , or —Si(R 12 )(R 13 )(R 14 ), a C 6 -C 24 aryl group which may be optionally substituted by G; Or a C 2 -C 30 heteroaryl group which may be optionally substituted by G;
R10 및 R11은 서로 독립적으로 G에 의해 임의로 치환될 수 있는 C6-C24아릴 기; 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기이고;R 10 and R 11 are independently of each other a C 6 -C 24 aryl group which may be optionally substituted by G; Or a C 2 -C 30 heteroaryl group which may be optionally substituted by G;
R12, R13 및 R14는 서로 독립적으로 임의로 E에 의해 치환될 수 있고/거나 D가 개재될 수 있는 C1-C25알킬 기; G에 의해 임의로 치환될 수 있는 C6-C24아릴 기; 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기이고;R 12 , R 13 and R 14 are independently of each other a C 1 -C 25 alkyl group which may be optionally substituted by E and/or may be interrupted by D; A C 6 -C 24 aryl group which may be optionally substituted by G; Or a C 2 -C 30 heteroaryl group which may be optionally substituted by G;
D는 -CO-, -COO-, -S-, -SO-, -SO2-, -O-, -NR65-, -SiR70R71-, -POR72-, -CR63=CR64- 또는 -C≡C-이고,D is -CO-, -COO-, -S-, -SO-, -SO 2 -, -O-, -NR 65 -, -SiR 70 R 71 -, -POR 72 -, -CR 63 =CR 64 -Or -C≡C-,
E는 -OR69, -SR69, -NR65R66, -COR68, -COOR67, -CONR65R66, -CN 또는 F이고,E is -OR 69 , -SR 69 , -NR 65 R 66 , -COR 68 , -COOR 67 , -CONR 65 R 66 , -CN or F,
G는 E, 또는 C1-C18알킬 기, C6-C24아릴 기; F, C1-C18알킬 또는 O가 개재된 C1-C18알킬에 의해 치환된 C6-C24아릴 기; C2-C30헤테로아릴 기, 또는 F, C1-C18알킬 또는 O가 개재된 C1-C18알킬에 의해 치환된 C2-C30헤테로아릴 기이고;G is E, or a C 1 -C 18 alkyl group, C 6 -C 24 aryl group; F, a C 6 -C 24 aryl group substituted by a C 1 -C 18 alkyl or C 1 -C 18 alkyl, O is interposed; C 2 -C 30 heteroaryl group, or F, C 1 -C 18 alkyl or O is interposed a C 1 a C 2 -C 30 heteroaryl group is substituted by -C 18 alkyl;
R63 및 R64는 서로 독립적으로 H, C6-C18아릴; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴; C1-C18알킬; 또는 -O-가 개재된 C1-C18알킬이고;R 63 and R 64 are independently of each other H, C 6 -C 18 aryl; C 6 -C 18 aryl substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl; Or C 1 -C 18 alkyl interrupted by -O-;
R65 및 R66은 서로 독립적으로 C6-C18아릴 기; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴; C1-C18알킬 기; 또는 -O-가 개재된 C1-C18알킬 기이거나; 또는R 65 and R 66 are independently of each other a C 6 -C 18 aryl group; C 6 -C 18 aryl substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl group; Or a C 1 -C 18 alkyl group interrupted by -O-; or
R65 및 R66은 함께 5 또는 6원 고리를 형성하고,R 65 and R 66 together form a 5 or 6 membered ring,
R67은 C6-C18아릴 기; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴 기; C1-C18알킬 기; 또는 -O-가 개재된 C1-C18알킬 기이고,R 67 is a C 6 -C 18 aryl group; A C 6 -C 18 aryl group substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl group; Or a C 1 -C 18 alkyl group interrupted by -O-,
R68은 H; C6-C18아릴 기; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴 기; C1-C18알킬 기; 또는 -O-가 개재된 C1-C18알킬 기이고,R 68 is H; C 6 -C 18 aryl group; A C 6 -C 18 aryl group substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl group; Or a C 1 -C 18 alkyl group interrupted by -O-,
R69는 C6-C18아릴; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴; C1-C18알킬 기; 또는 -O-가 개재된 C1-C18알킬 기이고,R 69 is C 6 -C 18 aryl; C 6 -C 18 aryl substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl group; Or a C 1 -C 18 alkyl group interrupted by -O-,
R70 및 R71은 서로 독립적으로 C1-C18알킬 기, C6-C18아릴 기, 또는 C1-C18알킬에 의해 치환된 C6-C18아릴 기이고,R 70 and R 71 are independently of each other a C 1 -C 18 alkyl group, a C 6 -C 18 aryl group, or a C 6 -C 18 aryl group substituted by C 1 -C 18 alkyl,
R72는 C1-C18알킬 기, C6-C18아릴 기, 또는 C1-C18알킬에 의해 치환된 C6-C18아릴 기이며, 단R 72 is a C 1 -C 18 alkyl group, C 6 -C 18 aryl group, or C 6 -C 18 aryl group substituted by C 1 -C 18 alkyl, provided that
치환기 B1, B2, B3, B4, B5, B6, B7 및 B8 중 적어도 1개는 N을 나타내고;At least one of the substituents B 1 , B 2 , B 3 , B 4 , B 5 , B 6 , B 7 and B 8 represents N;
기 B1, B2, B3 및 B4 중 2개 이하가 N을 나타내고;Up to two of the groups B 1 , B 2 , B 3 and B 4 represent N;
기 B5, B6, B7 및 B8 중 2개 이하가 N을 나타내고;Up to two of the groups B 5 , B 6 , B 7 and B 8 represent N;
추가로, 단 치환기 R81, R82, R83, R84, R85, R86, R87 및 R88 중 적어도 1개는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기를 나타내고, 여기서 R16은 G에 의해 임의로 치환될 수 있는 벤즈이미다조[1,2-a]벤즈이미다조-5-일 기를 나타내고/거나; 기 A1, A2, A3 및 A4 중 적어도 1개는 G에 의해 임의로 치환될 수 있는 벤즈이미다조[1,2-a]벤즈이미다조-2,5-일렌 기를 나타낸다.Additionally, provided that at least one of the substituents R 81 , R 82 , R 83 , R 84 , R 85 , R 86 , R 87 and R 88 is of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) represents a group of r -R 16 , wherein R 16 represents a benzimidazo[1,2-a]benzimidazo-5-yl group which may be optionally substituted by G; At least one of the groups A 1 , A 2 , A 3 and A 4 represents a benzimidazo[1,2-a]benzimidazo-2,5-ylene group, which may be optionally substituted by G.
본 발명의 특정 화합물은 2.0 - 2.5 eV의 LUMO-수준을 갖고, 인광 방출체와 조합하여 호스트로서 사용되는 경우에 특히 탁월한 전력 효율을 나타낸다. 본 발명의 화합물을 포함하는 전계발광 (EL) 장치는 탁월한 휘도 특성을 유지하면서 감소된 구동 전압을 나타낸다.Certain compounds of the present invention have a LUMO-level of 2.0-2.5 eV and exhibit particularly excellent power efficiency when used as a host in combination with a phosphorescent emitter. Electroluminescent (EL) devices comprising the compounds of the present invention exhibit reduced driving voltages while maintaining excellent brightness characteristics.
본 발명의 화합물은 전자사진 광수용체, 광전 변환기, 유기 태양 전지 (유기 광기전력 장치), 스위칭 소자, 예컨대 유기 트랜지스터, 예를 들어 유기 FET 및 유기 TFT, 유기 발광 전계 효과 트랜지스터 (OLEFET), 이미지 센서, 염료 레이저 및 전계발광 장치, 예컨대 예를 들어 유기 발광 다이오드 (OLED)에 사용될 수 있다.The compounds of the present invention are electrophotographic photoreceptors, photoelectric converters, organic solar cells (organic photovoltaic devices), switching elements such as organic transistors, eg organic FETs and organic TFTs, organic light-emitting field effect transistors (OLEFETs), image sensors , Dye lasers and electroluminescent devices, such as for example organic light emitting diodes (OLEDs).
따라서, 본 발명의 추가의 대상은 본 발명에 따른 화합물을 포함하는 전자 장치에 관한 것이다. 전자 장치는 바람직하게는 전계발광 장치이다.Accordingly, a further subject of the invention relates to an electronic device comprising the compound according to the invention. The electronic device is preferably an electroluminescent device.
화학식 (I)의 화합물은 원칙적으로 EL 장치의 임의의 층에 사용될 수 있지만, 바람직하게는 호스트, 정공 수송 및 전자 차단 물질로서 사용된다. 특히, 화학식 (I)의 화합물은 청색 발광 인광 방출체를 위한 호스트 물질로서 사용된다.The compound of formula (I) can in principle be used in any layer of the EL device, but is preferably used as a host, hole transport and electron blocking material. In particular, the compound of formula (I) is used as a host material for a blue light-emitting phosphor emitter.
따라서, 본 발명의 추가의 대상은 본 발명에 따른 화학식 (I)의 화합물을 포함하는 정공 수송 층에 관한 것이다.Accordingly, a further subject of the invention relates to a hole transport layer comprising a compound of formula (I) according to the invention.
본 발명의 추가의 대상은 본 발명에 따른 화학식 (I)의 화합물을 포함하는 방출 층에 관한 것이다. 상기 실시양태에서, 화학식 (I)의 화합물은 바람직하게는 인광 방출체와 조합하여 호스트 물질로서 사용된다.A further object of the invention relates to a release layer comprising a compound of formula (I) according to the invention. In this embodiment, the compound of formula (I) is preferably used as a host material in combination with a phosphorescent emitter.
화학식 (I)의 화합물은 바람직하게는 1500 g/mol 미만의 분자량을 갖는다.The compound of formula (I) preferably has a molecular weight of less than 1500 g/mol.
본 발명의 추가의 대상은 본 발명에 따른 화학식 (I)의 화합물을 포함하는 전자 차단 층에 관한 것이다.A further object of the invention relates to an electron blocking layer comprising a compound of formula (I) according to the invention.
D는 바람직하게는 -CO-, -COO-, -S-, -SO-, -SO2-, -O-, -NR65-이고, 여기서 R65는 C1-C18알킬, 예컨대 메틸, 에틸, n-프로필, 이소-프로필, n-부틸, 이소부틸, 또는 sec-부틸, 또는 C6-C14아릴, 예컨대 페닐, 톨릴, 나프틸 또는 비페닐릴, 또는 C2-C30헤테로아릴, 예컨대 예를 들어 벤즈이미다조[1,2-a]벤즈이미다조-5-일 (), 벤즈이미다조[1,2-a]벤즈이미다조-2-일 (), 카르바졸릴, 디벤조푸라닐이고, 이는 비치환되거나, 또는 특히 C6-C10아릴, 또는 C1-C4알킬에 의해 치환된 C6-C10아릴; 또는 C2-C14헤테로아릴에 의해 치환될 수 있다.D is preferably -CO-, -COO-, -S-, -SO-, -SO 2 -, -O-, -NR 65 -, where R 65 is C 1 -C 18 alkyl, such as methyl, Ethyl, n-propyl, iso-propyl, n-butyl, isobutyl, or sec-butyl, or C 6 -C 14 aryl, such as phenyl, tolyl, naphthyl or biphenylyl, or C 2 -C 30 heteroaryl , For example, benzimidazo[1,2-a]benzimidazo-5-yl ( ), Benzimidazo [1,2-a] Benzimidazo-2-yl ( ), carbazolyl, dibenzofuranyl, which is unsubstituted or especially C 6 -C 10 aryl, or C 6 -C 10 aryl substituted by C 1 -C 4 alkyl; Or C 2 -C 14 heteroaryl.
E는 바람직하게는 -OR69; -SR69; -NR65R65; -COR68; -COOR67; -CONR65R65; 또는 -CN이고; 여기서 R65, R67, R68 및 R69는 서로 독립적으로 C1-C18알킬, 예컨대 메틸, 에틸, n-프로필, 이소-프로필, n-부틸, 이소부틸, sec-부틸, 헥실, 옥틸, 또는 2-에틸-헥실, 또는 C6-C14아릴, 예컨대 페닐, 톨릴, 나프틸 또는 비페닐릴이다.E is preferably -OR 69 ; -SR 69 ; -NR 65 R 65 ; -COR 68 ; -COOR 67 ; -CONR 65 R 65 ; Or -CN; Wherein R 65 , R 67 , R 68 and R 69 are independently of one another C 1 -C 18 alkyl, such as methyl, ethyl, n-propyl, iso-propyl, n-butyl, isobutyl, sec-butyl, hexyl, octyl , Or 2-ethyl-hexyl, or C 6 -C 14 aryl, such as phenyl, tolyl, naphthyl or biphenylyl.
화학식 (I)의 화합물 중에서, 하기 화학식Among the compounds of formula (I), the following formula
의 화합물이 바람직하고, 여기서 R81, R82, R83, R85, R86 및 R87은 각각 상기 및 하기 주어진 (바람직한) 의미를 갖는다.Preferred is a compound of R 81 , R 82 , R 83 , R 85 , R 86 and R 87 have the (preferred) meanings given above and below, respectively.
바람직한 실시양태에서, 본 발명은 하기 화학식의 화합물에 관한 것이다.In a preferred embodiment, the invention relates to compounds of the formula
상기 식에서, R81, R82, R83, R85, R86 및 R87은 상기 정의된 바와 같다.In the above formula, R 81 , R 82 , R 83 , R 85 , R 86 and R 87 are as defined above.
화학식 (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) 및 (In)의 화합물이 바람직하다. 화학식 (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ij) 및 (In)의 화합물이 특히 바람직하다.Preferred are compounds of formulas (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) and (In). Particularly preferred are compounds of formulas (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ij) and (In).
R16' (R16)은 G에 의해 임의로 치환될 수 있는 C6-C24아릴 기, 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기일 수 있다.R 16' (R 16 ) may be a C 6 -C 24 aryl group optionally substituted by G, or a C 2 -C 30 heteroaryl group optionally substituted by G.
G에 의해 임의로 치환될 수 있는 C6-C24아릴 기는 전형적으로 페닐, 4-메틸페닐, 4-메톡시페닐, 나프틸, 특히 1-나프틸 또는 2-나프틸, 비페닐릴, 터페닐릴, 피레닐, 2- 또는 9-플루오레닐, 페난트릴 또는 안트릴이고, 이는 비치환되거나 또는 치환될 수 있다.C 6 -C 24 aryl groups which may be optionally substituted by G are typically phenyl, 4-methylphenyl, 4-methoxyphenyl, naphthyl, especially 1-naphthyl or 2-naphthyl, biphenylyl, terphenylyl , Pyrenyl, 2- or 9-fluorenyl, phenanthryl or anthryl, which may be unsubstituted or substituted.
G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기 R16' (R16)는 5 내지 7개의 고리 원자를 갖는 고리 또는 축합된 고리계를 나타내고, 여기서 질소, 산소 또는 황이 가능한 헤테로 원자이고, 전형적으로 적어도 6개의 공액 π-전자를 갖는 5 내지 30개의 원자를 갖는 헤테로시클릭 기, 예컨대 9H-피리도[2,3-b]인돌릴, 벤조푸로[2,3-b]피리딜, 벤조티오페노[2,3-b]피리딜, 9H-피리도[2,3-c]인돌릴, 벤조푸로[2,3-c]피리딜, 벤조티오페노[2,3-c]피리딜, 푸로[3,2-b:4,5-b']디피리딜, 피롤로[3,2-b:4,5-b']디피리딜, 티에노[3,2-b:4,5-b']디피리딜, 티에닐, 벤조티오페닐, 디벤조티오페닐, 티안트레닐, 푸릴, 푸르푸릴, 2H-피라닐, 벤조푸라닐, 이소벤조푸라닐, 디벤조푸라닐, 페녹시티에닐, 피롤릴, 이미다졸릴, 피라졸릴, 피리딜, 비피리딜, 트리아지닐, 피리미디닐, 피라지닐, 피리다지닐, 인돌리지닐, 이소인돌릴, 인돌릴, 인다졸릴, 퓨리닐, 퀴놀리지닐, 키놀릴, 이소키놀릴, 프탈라지닐, 나프티리디닐, 키녹살리닐, 키나졸리닐, 신놀리닐, 프테리디닐, 카르볼리닐, 벤조트리아졸릴, 벤족사졸릴, 페난트리디닐, 아크리디닐, 피리미디닐, 페난트롤리닐, 페나지닐, 이소티아졸릴, 페노티아지닐, 이속사졸릴, 푸라자닐, 벤즈이미다조[1,2-a]벤즈이미다조-5-일, 벤즈이미다조[1,2-a]벤즈이미다조-2-일, 카르바졸릴 또는 페녹사지닐이고, 이는 비치환되거나 또는 치환될 수 있다.The C 2 -C 30 heteroaryl group R 16' (R 16 ), which may be optionally substituted by G, represents a ring or fused ring system having 5 to 7 ring atoms, wherein nitrogen, oxygen or sulfur is a possible hetero atom , And a heterocyclic group having 5 to 30 atoms, typically having at least 6 conjugated π-electrons, such as 9H-pyrido[2,3-b]indolyl, benzofuro[2,3-b]pyri Dill, benzothiopheno[2,3-b]pyridyl, 9H-pyrido[2,3-c]indolyl, benzofuro[2,3-c]pyridyl, benzothiopheno[2,3 -c]pyridyl, furo[3,2-b:4,5-b']dipyridyl, pyrrolo[3,2-b:4,5-b']dipyridyl, thieno[3, 2-b:4,5-b']dipyridyl, thienyl, benzothiophenyl, dibenzothiophenyl, thianthrenyl, furyl, furfuryl, 2H-pyranyl, benzofuranyl, isobenzofuranyl, Dibenzofuranyl, phenoxythienyl, pyrrolyl, imidazolyl, pyrazolyl, pyridyl, bipyridyl, triazinyl, pyrimidinyl, pyrazinyl, pyridazinyl, indolizinyl, isoindolyl, indole Reel, indazolyl, purinyl, quinolinyl, quinolyl, isokinolyl, phthalazinyl, naphthyridinyl, kinoxalinyl, kinazolinyl, cynolinyl, pteridinyl, carbolinyl, benzotriazolyl , Benzoxazolyl, phenanthridinyl, acridinyl, pyrimidinyl, phenanthrolinyl, phenazinyl, isothiazolyl, phenothiazinyl, isoxazolyl, furazanyl, benzimidazo[1,2-a]benz Imidazo-5-yl, benzimidazo[1,2-a]benzimidazo-2-yl, carbazolyl or phenoxazinyl, which may be unsubstituted or substituted.
C6-C24아릴 및 C2-C30헤테로아릴 기는 G에 의해 치환될 수 있다.C 6 -C 24 aryl and C 2 -C 30 heteroaryl groups may be substituted by G.
G는 E와 동일한 바람직한 정의를 갖거나, 또는 C1-C18알킬, 예컨대 메틸, 에틸, n-프로필, 이소-프로필, n-부틸, 이소부틸, sec-부틸, 헥실, 옥틸 또는 2-에틸-헥실이거나, 또는 C1-C18퍼플루오로알킬, 예컨대 예를 들어 -CF3이다.G has the same preferred definition as E, or C 1 -C 18 alkyl, such as methyl, ethyl, n-propyl, iso-propyl, n-butyl, isobutyl, sec-butyl, hexyl, octyl or 2-ethyl -Hexyl, or C 1 -C 18 perfluoroalkyl, for example -CF 3 .
바람직한 C2-C30헤테로아릴 기는 피리딜, 트리아지닐, 피리미디닐, 특히 9H-피리도[2,3-b]인돌릴, 벤조푸로[2,3-b]피리딜, 벤조티오페노[2,3-b]피리딜, 9H-피리도[2,3-c]인돌릴, 벤조푸로[2,3-c]피리딜, 벤조티오페노[2,3-c]피리딜, 푸로[3,2-b:4,5-b']디피리딜, 피롤로[3,2-b:4,5-b']디피리딜, 티에노[3,2-b:4,5-b']디피리딜, 벤즈이미다조[1,2-a]벤즈이미다조-5-일 (), 벤즈이미다조[1,2-a]벤즈이미다조-2-일 (), 카르바졸릴, 디벤조푸라닐 및 디벤조티오페닐이고, 이는 비치환되거나, 또는 특히 C6-C10아릴, 또는 C1-C4알킬에 의해 치환된 C6-C10아릴; 또는 C2-C14헤테로아릴에 의해 치환될 수 있다.Preferred C 2 -C 30 heteroaryl groups are pyridyl, triazinyl, pyrimidinyl, especially 9H-pyrido[2,3-b]indolyl, benzofuro[2,3-b]pyridyl, benzothiopheno [2,3-b]pyridyl, 9H-pyrido[2,3-c]indolyl, benzofuro[2,3-c]pyridyl, benzothiopheno[2,3-c]pyridyl, Furo[3,2-b:4,5-b']dipyridyl, pyrrolo[3,2-b:4,5-b']dipyridyl, thieno[3,2-b:4, 5-b']dipyridyl, benzimidazo[1,2-a]benzimidazo-5-yl ( ), Benzimidazo [1,2-a] Benzimidazo-2-yl ( ), carbazolyl, dibenzofuranyl and dibenzothiophenyl, which are unsubstituted or in particular C 6 -C 10 aryl, or C 6 -C 10 aryl substituted by C 1 -C 4 alkyl; Or C 2 -C 14 heteroaryl.
R16은 화학식 의 기이거나, 또는 기 A1, A2, A3 및 A4 중 적어도 1개가 화학식 의 기를 나타내는 경우에 R16은 R16'의 의미를 갖는다.R 16 is a chemical formula Or is at least one of the groups A 1 , A 2 , A 3 and A 4 In the case of representing a group of R 16 has the meaning of R 16' .
R16'는 바람직하게는 H, 또는 화학식 -Si(R12)(R13)(R14), 특히R 16' is preferably H, or the formula -Si(R 12 )(R 13 )(R 14 ), in particular
의 기이다.It is a flag.
R12, R13 및 R14는 서로 독립적으로, 1개 이상의 C1-C18알킬 기에 의해 임의로 치환될 수 있는 페닐 기이고;R 12 , R 13 and R 14 are, independently of each other, a phenyl group which may be optionally substituted by one or more C 1 -C 18 alkyl groups;
R21 및 R21'는 서로 독립적으로 H, 페닐 기 또는 C1-C18알킬 기이고;R 21 and R 21' are each independently H, a phenyl group or a C 1 -C 18 alkyl group;
R22 및 R23은 서로 독립적으로 H, 또는 화학식 R 22 and R 23 are each independently H, or a formula
의 기이고; Is a group of;
X는 O, S 또는 NR24이고,X is O, S or NR 24 ,
R24는 C6-C24아릴 기 또는 C2-C30헤테로아릴 기이고, 이는 G에 의해 임의로 치환될 수 있고, 여기서 G는 상기에 정의된 바와 같고;R 24 is a C 6 -C 24 aryl group or C 2 -C 30 heteroaryl group, which may be optionally substituted by G, where G is as defined above;
R89는 H, 화학식 R 89 is H, chemical formula
의 기이다.It is a flag.
A1, A2, A3 및 A4는 서로 독립적으로 G에 의해 임의로 치환될 수 있는 C6-C24아릴렌 기, 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴렌 기이다. G에 의해 임의로 치환될 수 있는 C6-C24아릴렌 기 A1, A2, A3 및 A4는 전형적으로 페닐렌, 4-메틸페닐렌, 4-메톡시페닐렌, 나프틸렌, 특히 1-나프틸렌 또는 2-나프틸렌, 비페닐릴렌, 터페닐릴렌, 피레닐렌, 2- 또는 9-플루오레닐렌, 페난트릴렌 또는 안트릴렌이고, 이는 비치환되거나 또는 치환될 수 있다.A 1 , A 2 , A 3 and A 4 are independently of each other a C 6 -C 24 arylene group which may be optionally substituted by G, or a C 2 -C 30 heteroarylene group which may be optionally substituted by G to be. C 6 -C 24 arylene groups A 1 , A 2 , A 3 and A 4 which may be optionally substituted by G are typically phenylene, 4-methylphenylene, 4-methoxyphenylene, naphthylene, especially 1 -Naphthylene or 2-naphthylene, biphenylylene, terphenylylene, pyrenylene, 2- or 9-fluorenylene, phenanthrene or anthylene, which may be unsubstituted or substituted.
G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴렌 기 A1, A2, A3 및 A4는 5 내지 7개의 고리 원자를 갖는 고리 또는 축합된 고리계를 나타내고, 여기서 질소, 산소 또는 황이 가능한 헤테로 원자이고, 전형적으로 적어도 6개의 공액 π-전자를 갖는 5 내지 30개의 원자를 갖는 헤테로시클릭 기, 예컨대 벤조푸로[2,3-b]피리딜렌 (), 벤조티오페노[2,3-b]피리딜렌 (), 피리도[2,3-b]인돌릴렌 (), 벤조푸로[2,3-c]피리딜렌 (), 벤조티오페노[2,3-c]피리딜렌 (), 피리도[2,3-c]인돌릴렌 (), 푸로[3,2-b:4,5-b']디피리딜렌 (), 티에노[3,2-b:4,5-b']디피리딜렌 (), 피롤로[3,2-b:4,5-b']디피리딜렌 (), 티에닐렌, 벤조티오페닐렌, 티안트레닐렌, 푸릴렌, 푸르푸릴렌, 2H-피라닐렌, 벤조푸라닐렌, 이소벤조푸라닐렌, 디벤조푸라닐렌 (), 디벤조티오페닐렌 (), 페녹시티에닐렌, 피롤릴렌, 이미다졸릴렌, 피라졸릴렌, 피리딜렌, 비피리딜렌, 트리아지닐렌, 피리미디닐렌, 피라지닐렌, 피리다지닐렌, 인돌리지닐렌, 이소인돌릴렌, 인돌릴렌, 인다졸릴렌, 퓨리닐렌, 퀴놀리지닐렌, 키놀릴렌, 이소키놀릴렌, 프탈라지닐렌, 나프티리디닐렌, 키녹살리닐렌, 키나졸리닐렌, 신놀리닐렌, 프테리디닐렌, 카르볼리닐렌, 벤조트리아졸릴렌, 벤족사졸릴렌, 페난트리디닐렌, 아크리디닐렌, 피리미디닐렌, 페난트롤리닐렌, 페나지닐렌, 이소티아졸릴렌, 페노티아지닐렌, 이속사졸릴렌, 푸라자닐렌, 카르바졸릴렌 (), 벤즈이미다조[1,2-a]벤즈이미다조-2,5-일렌 () 또는 페녹사지닐렌이고, 이는 비치환되거나 또는 치환될 수 있다.C 2 -C 30 heteroarylene groups A 1 , A 2 , A 3 and A 4 which may be optionally substituted by G represent a ring or fused ring system having 5 to 7 ring atoms, wherein nitrogen, oxygen Or sulfur is a possible hetero atom, typically a heterocyclic group having 5 to 30 atoms with at least 6 conjugated π-electrons, such as benzofuro[2,3-b]pyridylene ( ), benzothiopheno[2,3-b]pyridylene ( ), pyrido[2,3-b]indolylene ( ), benzofuro[2,3-c]pyridylene ( ), benzothiopheno[2,3-c]pyridylene ( ), pyrido[2,3-c]indolelene ( ), furo[3,2-b:4,5-b']dipyridylene ( ), thieno[3,2-b:4,5-b']dipyridylene ( ), pyrrolo[3,2-b:4,5-b']dipyridylene ( ), thienylene, benzothiophenylene, thiantrenylene, furylene, furfurylene, 2H-pyranylene, benzofuranylene, isobenzofuranylene, dibenzofuranylene ( ), dibenzothiophenylene ( ), phenoxyethylene, pyrrolylene, imidazolylene, pyrazolylene, pyridylene, bipyridylene, triazinylene, pyrimidinylene, pyrazinylene, pyridazinylene, indolizinylene, isoin Dolylene, Indolylene, Indazolylene, Purinylene, Quinolizinylene, Kinolelyne, Isoquinolelene, Phthalazinylene, Naphthyridinylene, Kinoxalinylene, Kinazolinylene, Sinnolinylene, Pteriri Dinilene, carbolinylene, benzotriazolylene, benzoxazolylene, phenanthridinylene, acridinylene, pyrimidinylene, phenanthrolinylene, phenazinylene, isothiazolylene, phenothiazinylene, isoxa Zolylene, furazanilen, carbazolylene ( ), Benzimidazo[1,2-a]benzimidazo-2,5-ylene ( ) Or phenoxazinylene, which may be unsubstituted or substituted.
바람직한 C6-C24아릴렌 기는 1,3-페닐렌, 3,3'-비페닐릴렌, 3,3'-m-터페닐렌, 2- 또는 9-플루오레닐렌, 페난트릴렌이고, 이는 비치환되거나 또는 특히 C6-C10아릴, C1-C4알킬에 의해 치환된 C6-C10아릴; 또는 C2-C14헤테로아릴에 의해 치환될 수 있다.Preferred C 6 -C 24 arylene groups are 1,3-phenylene, 3,3'-biphenylylene, 3,3'-m-terphenylene, 2- or 9-fluorenylene, phenanthrene, This is unsubstituted or, especially C 6 -C 10 aryl, C 1 -C of C 6 -C 10 aryl which is substituted by 4-alkyl; Or C 2 -C 14 heteroaryl.
바람직한 C2-C30헤테로아릴렌 기는 피리딜렌, 트리아지닐렌, 피리미디닐렌, 특히 벤조푸로[2,3-b]피리딜렌, 벤조티오페노[2,3-b]피리딜렌, 피리도[2,3-b]인돌릴렌, 벤조푸로[2,3-c]피리딜렌, 벤조티오페노[2,3-c]피리딜렌, 피리도[2,3-c]인돌릴렌, 푸로[3,2-b:4,5-b']디피리딜렌, 티에노[3,2-b:4,5-b']디피리딜렌, 피롤로[3,2-b:4,5-b']디피리딜렌, 디벤조푸라닐렌, 디벤조티오페닐렌, 카르바졸릴렌 및 벤즈이미다조[1,2-a]벤즈이미다조-2,5-일렌이고, 이는 비치환되거나 또는 특히 C6-C10아릴, C1-C4알킬에 의해 치환된 C6-C10아릴; 또는 C2-C14헤테로아릴에 의해 치환될 수 있다.Preferred C 2 -C 30 heteroarylene groups are pyridylene, triazinylene, pyrimidinylene, especially benzofuro[2,3-b]pyridylene, benzothiopheno[2,3-b]pyridylene, pyrido [2,3-b]indolylene, benzofuro[2,3-c]pyridylene, benzothiopheno[2,3-c]pyridylene, pyrido[2,3-c]indolelene, furo[ 3,2-b:4,5-b']dipyridylene, thieno[3,2-b:4,5-b']dipyridylene, pyrrolo[3,2-b:4,5- b']dipyridylene, dibenzofuranylene, dibenzothiophenylene, carbazolylene and benzimidazo[1,2-a]benzimidazo-2,5-ylene, which are unsubstituted or in particular C 6 -C 10 aryl, C 1 -C of C 6 -C 10 aryl which is substituted by 4-alkyl; Or C 2 -C 14 heteroaryl.
벤즈이미다조[1,2-a]벤즈이미다조-5-일, 벤즈이미다조[1,2-a]벤즈이미다조-2-일, 카르바졸릴 및 디벤조푸라닐이 C2-C14헤테로아릴 기의 예이다. 페닐, 1-나프틸 및 2-나프틸이 C6-C10아릴 기의 예이다.Benzimidazo[1,2-a]benzimidazo-5-yl, benzimidazo[1,2-a]benzimidazo-2-yl, carbazolyl and dibenzofuranyl are C 2 -C 14 It is an example of a heteroaryl group. Phenyl, 1-naphthyl and 2-naphthyl are examples of C 6 -C 10 aryl groups.
C6-C24아릴렌 및 C2-C30헤테로아릴렌 기는 G에 의해 치환될 수 있다.C 6 -C 24 arylene and C 2 -C 30 heteroarylene groups may be substituted by G.
A1, A2, A3 및 A4는 바람직하게는 화학식A 1 , A 2 , A 3 and A 4 are preferably chemical formulas
의 기이고, 여기서 R89 및 X는 하기 정의된 바와 같다. X는 바람직하게는 O이다.And wherein R 89 and X are as defined below. X is preferably O.
본 발명의 아자-디벤조푸란 유도체는 이들이 적어도 1개의 벤즈이미다조[1,2-a]벤즈이미다조-5-일 기 및/또는 적어도 1개의 벤즈이미다조[1,2-a]벤즈이미다조-2,5-일렌 기로 치환된 것을 특징으로 한다.The aza-dibenzofuran derivatives of the present invention are those in which at least one benzimidazo[1,2-a]benzimidazo-5-yl group and/or at least one benzimidazo[1,2-a]benzimid It is characterized by being substituted with a dazo-2,5-ylene group.
특히, 본 발명의 아자-디벤조푸란 유도체는 치환기 R81, R82, R83, R84, R85, R86, R87 및 R88 중 적어도 1개가 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고, 여기서 R16은 화학식 의 기이고/거나; 치환기 R81, R82, R83, R84, R85, R86, R87 및 R88 중 적어도 1개가 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고, 여기서 기 A1, A2, A3 및 A4 중 적어도 1개는 화학식 의 기를 나타내는 것을 특징으로 한다.In particular, the aza-dibenzofuran derivative of the present invention is a substituent R 81 , R 82 , R 83 , At least one of R 84 , R 85 , R 86 , R 87 and R 88 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 , Where R 16 is the chemical formula And/or Substituents R 81 , R 82 , R 83 , At least one of R 84 , R 85 , R 86 , R 87 and R 88 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' , Wherein at least one of the groups A 1 , A 2 , A 3 and A 4 is a chemical formula It is characterized by indicating the flag.
바람직한 실시양태에서, 본 발명은 화학식 (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ig), (Ih), (Ii), (Ij), (Ik), (Il), (Im), (In) 및 (Io)의 화합물에 관한 것이고, 여기서In a preferred embodiment, the invention provides formulas (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ig), (Ih), (Ii), (Ij), ( Ik), (Il), (Im), (In) and (Io).
화학식 (Ia)의 화합물의 경우For compounds of formula (Ia)
R83은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 83 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R87은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 87 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R83은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 83 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R87은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Ib)의 화합물의 경우For compounds of formula (Ib)
R82는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 82 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R87은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 87 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R82는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 82 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R87은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Ic)의 화합물의 경우For compounds of formula (Ic)
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R87은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 87 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R87은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Id)의 화합물의 경우For compounds of formula (Id)
R81은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 81 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R81은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 81 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Ie)의 화합물의 경우For compounds of formula (Ie)
R83은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 83 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R87은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 87 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R83은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 83 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R87은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (If)의 화합물의 경우For compounds of formula (If)
R83은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 83 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R83은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 83 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Ig)의 화합물의 경우For compounds of formula (Ig)
R82는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 82 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R82는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 82 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Ih)의 화합물의 경우For compounds of formula (Ih)
R81은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 81 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R87은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 87 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R81은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 81 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R87은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Ii)의 화합물의 경우For compounds of formula (Ii)
R83은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 83 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R83은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 83 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Ij)의 화합물의 경우For compounds of formula (Ij)
R83은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 83 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R83은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 83 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Ik)의 화합물의 경우For compounds of formula (Ik)
R81은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 81 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R81은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 81 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Il)의 화합물의 경우For compounds of formula (Il)
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R87은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 87 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R87은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (Im)의 화합물의 경우For compounds of formula (Im)
R83은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 83 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R85는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 85 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R83은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 83 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R85는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 85 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
화학식 (In)의 화합물의 경우For compounds of formula (In)
R83은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 83 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R87은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 87 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R83은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 83 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R87은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
o는 0 또는 1이고, p는 0 또는 1이고, q는 0 또는 1이고, r은 0 또는 1이고;o is 0 or 1, p is 0 or 1, q is 0 or 1, and r is 0 or 1;
화학식 (Io)의 화합물의 경우For compounds of formula (Io)
R82는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 82 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
R86은 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이거나; 또는R 86 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ; or
R82는 H 또는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기이고;R 82 is H or a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' ;
R86은 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기이고;R 86 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 ;
A1, A2, A3 및 A4는 서로 독립적으로 화학식A 1 , A 2 , A 3 and A 4 are independently of each other
의 기이고;Is a group of;
R16은 화학식 의 기이거나, 또는 기 A1, A2, A3 및 A4 중 적어도 1개가 화학식 의 기를 나타내는 경우에 R16은 R16'의 의미를 갖고;R 16 is a chemical formula Or is at least one of the groups A 1 , A 2 , A 3 and A 4 R 16 in the case of representing a group has the meaning of R 16' ;
R16'는 H, 또는 화학식 -Si(R12)(R13)(R14), ,R 16' is H, or the formula -Si(R 12 )(R 13 )(R 14 ), ,
의 기이고;Is a group of;
R12, R13 및 R14는 서로 독립적으로, 1개 이상의 알킬 기, 특히 C1-C18알킬 기에 의해 임의로 치환될 수 있는 페닐 기이고;R 12 , R 13 and R 14 are each independently a phenyl group which may be optionally substituted by one or more alkyl groups, in particular C 1 -C 18 alkyl groups;
R21 및 R21'는 서로 독립적으로 H, 페닐 기 또는 C1-C18알킬 기이고;R 21 and R 21' are each independently H, a phenyl group or a C 1 -C 18 alkyl group;
R22 및 R23은 서로 독립적으로 H, 또는 화학식R 22 and R 23 are each independently H, or a formula
의 기이고; Is a group of;
X는 O, S 또는 NR24이고,X is O, S or NR 24 ,
R24는 C6-C24아릴 기 또는 C2-C30헤테로아릴 기이고, 이는 G에 의해 임의로 치환될 수 있고, 여기서 G는 상기 정의된 바와 같고;R 24 is a C 6 -C 24 aryl group or C 2 -C 30 heteroaryl group, which may be optionally substituted by G, where G is as defined above;
R89는 H, 화학식 R 89 is H, chemical formula
의 기이다.It is a flag.
보다 바람직하게는, A1, A2, A3 및 A4는 서로 독립적으로 화학식More preferably, A 1 , A 2 , A 3 and A 4 are independently of each other
의 기이고;Is a group of;
R16은 화학식 의 기이거나; 또는 기 A1, A2, A3 및 A4 중 적어도 1개가 화학식 의 기를 나타내는 경우에 R16은 R16'의 의미를 갖고;R 16 is a chemical formula Is a group of; Or at least one of the groups A 1 , A 2 , A 3 and A 4 is a chemical formula R 16 in the case of representing a group has the meaning of R 16' ;
R16'는 H, 또는 화학식 R 16' is H, or a chemical formula
의 기이고; R89는 H, 화학식 또는Is a group of; R 89 is H, chemical formula or
의 기이고, 여기서, X는 O, S 또는 NR24이고, 여기서 R24는 이다. Is a group, wherein X is O, S or NR 24 , where R 24 is to be.
R24는 바람직하게는 이다. X는 바람직하게는 O이다.R 24 is preferably to be. X is preferably O.
화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16의 기는 바람직하게는 화학식The group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 is preferably a formula
의 기이다.It is a flag.
화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16'의 기는 바람직하게는 H, 또는 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기; 또는 화학식The group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16' is preferably H, or formulas (XIIa), (XIIb) as defined above , (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn) , (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), ( Groups of XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg); Or chemical formula
의 기이다.It is a flag.
바람직한 실시양태에서, 본 발명은In a preferred embodiment, the invention
R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), (XIIl), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 83 is as defined above XIIk), (XIIl), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw) , (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ia)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) Group of compounds of formula (Ia); or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 87 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ia)의 화합물에 관한 것이다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The group relates to a compound of formula (Ia).
상기 실시양태에서, R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In the above embodiment, R 83 is as defined above (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb) ), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ia)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compound of formula (Ia) which is the group of; or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 87 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ia)의 화합물이 보다 바람직하다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of formula (Ia), which are groups of) are more preferred.
바람직한 실시양태에서, 본 발명은In a preferred embodiment, the invention
R82가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 82 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ib)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) Group of compounds of formula (Ib); or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 87 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R82가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ib)의 화합물에 관한 것이다.R 82 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The group relates to a compound of formula (Ib).
상기 실시양태에서, R82가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In the above embodiment, formula (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), wherein R 82 is as defined above, (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb) ), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ib)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of formula (Ib) which are groups of; or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 87 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R82가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ib)의 화합물이 보다 바람직하다.R 82 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of the formula (Ib), which are groups of) are more preferred.
바람직한 실시양태에서, 본 발명은In a preferred embodiment, the invention
R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 85 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ic)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The compound of formula (Ic); or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고;Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 87 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) groups;
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ic)의 화합물에 관한 것이다.R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The group relates to a compound of formula (Ic).
상기 실시양태에서, R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In the above embodiment, R 85 is as defined above (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb) ), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ic)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compound of formula (Ic) which is the group of; or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 87 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ic)의 화합물이 보다 바람직하다.R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of formula (Ic), which are groups of) are more preferred.
바람직한 실시양태에서, 본 발명은In a preferred embodiment, the invention
R81이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 81 is as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기; 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Id)의 화합물; 또는R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) Groups of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg); Or as defined above (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr) , (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), ( (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq) , (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or ( Compound of formula (Id), which is a group of XVId); or
R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고;Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 85 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) groups;
R81이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Id)의 화합물에 관한 것이다.R 81 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) It relates to the compound of formula (Id) which is a group.
상기 실시양태에서, R81이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In the above embodiment, R 81 is as defined above (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb) ), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Id)의 화합물; 또는R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compound of formula (Id) which is the group of; or
R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 85 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R81이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Id)의 화합물이 보다 바람직하다.R 81 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of formula (Id), which are groups of) are more preferred.
바람직한 실시양태에서, 본 발명은In a preferred embodiment, the invention
R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 83 is as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ie)의 화합물이거나; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The group is a compound of formula (Ie); or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 87 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ie)의 화합물에 관한 것이다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The group relates to a compound of formula (Ie).
상기 실시양태에서, R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In the above embodiment, R 83 is as defined above (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb) ), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ie)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of formula (Ie) which are groups of; or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 87 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ie)의 화합물이 보다 바람직하다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of the formula (Ie), which are groups of) are more preferred.
바람직한 실시양태에서, 본 발명은In a preferred embodiment, the invention
R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 83 is as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (If)의 화합물; 또는R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) Compounds of the formula (If) attributable to; or
R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 85 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (If)의 화합물에 관한 것이다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) It relates to the compound of the formula (If) attributable.
상기 실시양태에서, R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In the above embodiment, R 83 is as defined above (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb) ), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (If)의 화합물; 또는R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compound of formula (If), which is a group of; or
R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 85 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (If)의 화합물이 보다 바람직하다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) The compound of the formula (If), which is a group of ), is more preferable.
바람직한 실시양태에서, 본 발명은In a preferred embodiment, the invention
R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 83 is as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ij)의 화합물; 또는R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The compound of formula (Ij); or
R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 85 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ij)의 화합물에 관한 것이다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The group relates to a compound of formula (Ij).
상기 실시양태에서, R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In the above embodiment, R 83 is as defined above (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb) ), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ij)의 화합물; 또는R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compound of formula (Ij) which is the group of; or
R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 85 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ij)의 화합물이 보다 바람직하다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of the formula (Ij), which are groups of) are more preferred.
바람직한 실시양태에서, 본 발명은In a preferred embodiment, the invention
R85가 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 85 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Il)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) A compound of formula (Il) attributable to; or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 87 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R85가 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Il)의 화합물에 관한 것이다.R 85 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The group relates to a compound of formula (Il).
바람직한 실시양태에서, 본 발명은 R83이 상기와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In a preferred embodiment, the invention provides that R 83 is of the formula (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi) , (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu) , (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group ego,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (In)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) Group of compounds of formula (In); or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), wherein R 87 are as defined above XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), ( XIIw), a group of (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg),
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj), (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (In)의 화합물에 관한 것이다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIh), (XIIi), (XIIj) as defined above , (XIIk), ((XIIl)), (XIIm), (XIIn), (XIIo), (XIIp), (XIIq), (XIIr), (XIIs), (XIIt), (XIIu), (XIIv) A group of (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or the above definition Formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVh), (XIVo), (XIVp), (XIVq), (XIVr), (XIVs) as ), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVy), (XIVz), (XVa), (XVb), (XVc), (XVd), (XVe), (XVf), (XVg), (XVh), (XVi), (XVj), (XVk), (XVl), (XVm), (XVn), (XVo), (XVp), (XVq), (XVr) ), (XVs), (XVt), (XVu), (XVv), (XVw), (XVx), (XVy), (XVz), (XVIa), (XVIb), (XVIc) or (XVId) The group relates to a compound of formula (In).
상기 실시양태에서, R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,In the above embodiment, R 83 is as defined above (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb) ), (XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (In)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compound of formula (In) which is the group of; or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 87 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (In)의 화합물이 보다 바람직하다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of the formula (In), which are groups of) are more preferred.
바람직한 화합물의 예는 청구범위 제9항에 나타낸 화합물 A-1 내지 A-65, B-1 내지 B-8, C-1 내지 C-65, D-1 내지 D-8, E-1 내지 E-65, F-1 내지 F-65 및 G-1이다.Examples of preferred compounds are compounds A-1 to A-65, B-1 to B-8, C-1 to C-65, D-1 to D-8, E-1 to E shown in claim 9 -65, F-1 to F-65 and G-1.
특히 바람직한 실시양태에서, 본 발명은In a particularly preferred embodiment, the invention
R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), wherein R 83 is as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ia)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compound of formula (Ia) which is the group of; or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 87 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ia)의 화합물; 예컨대 예를 들어 화합물 (A-4)에 관한 것이다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compound of formula (Ia) which is the group of; For example relates to compound (A-4).
또 다른 특히 바람직한 실시양태에서, 본 발명은In another particularly preferred embodiment, the present invention
R83이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), wherein R 83 is as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R87이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ie)의 화합물; 또는R 87 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of formula (Ie) which are groups of; or
R87이 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기이고,Formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (R 87 ) as defined above XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc) , (XIIId), (XIIIe), (XIIIf) or (XIIIg) group,
R83이 H, 상기 정의된 바와 같은 화학식 (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn), (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), (XIIIc), (XIIId), (XIIIe), (XIIIf) 또는 (XIIIg)의 기, 또는 상기 정의된 바와 같은 화학식 (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc) 또는 (XVId)의 기인 화학식 (Ie)의 화합물; 예컨대 예를 들어 화합물 에 관한 것이다.R 83 is H, formulas (XIIa), (XIIb), (XIIc), (XIId), (XIIe), (XIIf), (XIIg), (XIIj), (XIIk), (XIIn) as defined above , (XIIo), (XIIq), (XIIs), (XIIt), (XIIu), (XIIv), (XIIw), (XIIx), (XIIy), (XIIz), (XIIIa), (XIIIb), ( A group of XIIIc), (XIIId), (XIIIe), (XIIIf) or (XIIIg), or formulas (XIVb), (XIVc), (XIVd), (XIVe), (XIVf), (XIVg) as defined above ), (XIVo), (XIVp), (XIVq), (XIVr), (XIVt), (XIVu), (XIVv), (XIVw), (XIVx), (XIVz), (XVa), (XVb), (XVc), (XVk), (XVl), (XVo), (XVp), (XVs), (XVw), (XVx), (XVy), (XVIa), (XVIb), (XVIc), or (XVId) Compounds of formula (Ie) which are groups of; For example compounds It is about.
예를 들어 (E-57)과 같은 화합물은 호스트 및/또는 정공 수송 물질로서 유리하게 사용될 수 있다.Compounds such as (E-57) can be advantageously used as host and/or hole transport materials.
예를 들어 과 같은 화합물은 전자 수송 물질로서 특히 적합하다.For example Such compounds are particularly suitable as electron transport materials.
할로겐은 플루오린, 염소, 브로민 및 아이오딘이다.Halogens are fluorine, chlorine, bromine and iodine.
C1-C25알킬 (C1-C18알킬)은 전형적으로 선형, 또는 가능한 경우에 분지형이다. 예는 메틸, 에틸, n-프로필, 이소프로필, n-부틸, sec.-부틸, 이소부틸, tert.-부틸, n-펜틸, 2-펜틸, 3-펜틸, 2,2-디메틸프로필, 1,1,3,3-테트라메틸펜틸, n-헥실, 1-메틸헥실, 1,1,3,3,5,5-헥사메틸헥실, n-헵틸, 이소헵틸, 1,1,3,3-테트라메틸부틸, 1-메틸헵틸, 3-메틸헵틸, n-옥틸, 1,1,3,3-테트라메틸부틸 및 2-에틸헥실, n-노닐, 데실, 운데실, 도데실, 트리데실, 테트라데실, 펜타데실, 헥사데실, 헵타데실 또는 옥타데실이다. C1-C8알킬은 전형적으로 메틸, 에틸, n-프로필, 이소프로필, n-부틸, sec.-부틸, 이소부틸, tert.-부틸, n-펜틸, 2-펜틸, 3-펜틸, 2,2-디메틸-프로필, n-헥실, n-헵틸, n-옥틸, 1,1,3,3-테트라메틸부틸 및 2-에틸헥실이다. C1-C4알킬은 전형적으로 메틸, 에틸, n-프로필, 이소프로필, n-부틸, sec.-부틸, 이소부틸, tert.-부틸이다.C 1 -C 25 alkyl (C 1 -C 18 alkyl) is typically linear, or branched where possible. Examples are methyl, ethyl, n-propyl, isopropyl, n-butyl, sec.-butyl, isobutyl, tert.-butyl, n-pentyl, 2-pentyl, 3-pentyl, 2,2-dimethylpropyl, 1 ,1,3,3-tetramethylpentyl, n-hexyl, 1-methylhexyl, 1,1,3,3,5,5-hexamethylhexyl, n-heptyl, isoheptyl, 1,1,3,3 -Tetramethylbutyl, 1-methylheptyl, 3-methylheptyl, n-octyl, 1,1,3,3-tetramethylbutyl and 2-ethylhexyl, n-nonyl, decyl, undecyl, dodecyl, tridecyl , Tetradecyl, pentadecyl, hexadecyl, heptadecyl or octadecyl. C 1 -C 8 alkyl is typically methyl, ethyl, n-propyl, isopropyl, n-butyl, sec.-butyl, isobutyl, tert.-butyl, n-pentyl, 2-pentyl, 3-pentyl, 2 ,2-dimethyl-propyl, n-hexyl, n-heptyl, n-octyl, 1,1,3,3-tetramethylbutyl and 2-ethylhexyl. C 1 -C 4 alkyl is typically methyl, ethyl, n-propyl, isopropyl, n-butyl, sec.-butyl, isobutyl, tert.-butyl.
C1-C25알콕시 기 (C1-C18알콕시 기)는 직쇄 또는 분지형 알콕시 기, 예를 들어 메톡시, 에톡시, n-프로폭시, 이소프로폭시, n-부톡시, sec-부톡시, tert-부톡시, 아밀옥시, 이소아밀옥시 또는 tert-아밀옥시, 헵틸옥시, 옥틸옥시, 이소옥틸옥시, 노닐옥시, 데실옥시, 운데실옥시, 도데실옥시, 테트라데실옥시, 펜타데실옥시, 헥사데실옥시, 헵타데실옥시 및 옥타데실옥시이다. C1-C8알콕시의 예는 메톡시, 에톡시, n-프로폭시, 이소프로폭시, n-부톡시, sec.-부톡시, 이소부톡시, tert.-부톡시, n-펜틸옥시, 2-펜틸옥시, 3-펜틸옥시, 2,2-디메틸프로폭시, n-헥실옥시, n-헵틸옥시, n-옥틸옥시, 1,1,3,3-테트라메틸부톡시 및 2-에틸헥실옥시, 바람직하게는 C1-C4알콕시, 예컨대 전형적으로 메톡시, 에톡시, n-프로폭시, 이소프로폭시, n-부톡시, sec.-부톡시, 이소부톡시, tert.-부톡시이다.C 1 -C 25 alkoxy groups (C 1 -C 18 alkoxy groups) are straight-chain or branched alkoxy groups, such as methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-part Methoxy, tert-butoxy, amyloxy, isoamyloxy or tert-amyloxy, heptyloxy, octyloxy, isooctyloxy, nonyloxy, decyloxy, undecyloxy, dodecyloxy, tetradecyloxy, penta Decyloxy, hexadecyloxy, heptadecyloxy and octadecyloxy. Examples of C 1 -C 8 alkoxy are methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec.-butoxy, isobutoxy, tert.-butoxy, n-pentyloxy, 2 -Pentyloxy, 3-pentyloxy, 2,2-dimethylpropoxy, n-hexyloxy, n-heptyloxy, n-octyloxy, 1,1,3,3-tetramethylbutoxy and 2-ethylhexyl Siloxy, preferably C 1 -C 4 alkoxy, such as typically methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec.-butoxy, isobutoxy, tert.-butoxy to be.
C1-C18퍼플루오로알킬, 특히 C1-C4퍼플루오로알킬은 분지형 또는 비분지형 라디칼, 예컨대 예를 들어 -CF3, -CF2CF3, -CF2CF2CF3, -CF(CF3)2, -(CF2)3CF3 및 -C(CF3)3이다.C 1 -C 18 perfluoroalkyl, in particular C 1 -C 4 perfluoroalkyl, is a branched or unbranched radical, for example -CF 3 , -CF 2 CF 3 , -CF 2 CF 2 CF 3 , -CF(CF 3 ) 2 , -(CF 2 ) 3 CF 3 and -C(CF 3 ) 3 .
용어 "시클로알킬 기"는 전형적으로 C4-C18시클로알킬, 특히 C5-C12시클로알킬, 예컨대 시클로펜틸, 시클로헥실, 시클로헵틸, 시클로옥틸, 시클로노닐, 시클로데실, 시클로운데실, 시클로도데실, 바람직하게는 시클로펜틸, 시클로헥실, 시클로헵틸 또는 시클로옥틸이고, 이는 비치환되거나 또는 치환될 수 있다.The term "cycloalkyl group" is typically C 4 -C 18 cycloalkyl, especially C 5 -C 12 cycloalkyl, such as cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, cycloundecyl, cyclo Dodecyl, preferably cyclopentyl, cyclohexyl, cycloheptyl or cyclooctyl, which may be unsubstituted or substituted.
임의로 치환될 수 있는 C6-C24아릴 (C6-C18아릴)은 전형적으로 페닐, 4-메틸페닐, 4-메톡시페닐, 나프틸, 특히 1-나프틸 또는 2-나프틸, 비페닐릴, 터페닐릴, 피레닐, 2- 또는 9-플루오레닐, 페난트릴 또는 안트릴이고, 이는 비치환되거나 또는 치환될 수 있다. 페닐, 1-나프틸 및 2-나프틸이 C6-C10아릴 기의 예이다.C 6 -C 24 aryl which may be optionally substituted (C 6 -C 18 aryl) is typically phenyl, 4-methylphenyl, 4-methoxyphenyl, naphthyl, especially 1-naphthyl or 2-naphthyl, biphenyl Reel, terphenylyl, pyrenyl, 2- or 9-fluorenyl, phenanthryl or anthryl, which may be unsubstituted or substituted. Phenyl, 1-naphthyl and 2-naphthyl are examples of C 6 -C 10 aryl groups.
C2-C30헤테로아릴은 5 내지 7개의 고리 원자를 갖는 고리 또는 축합 고리계를 나타내고, 여기서 질소, 산소 또는 황이 가능한 헤테로 원자이고, 전형적으로 적어도 6개의 공액 π-전자를 갖는 5 내지 30개의 원자를 갖는 헤테로시클릭 기, 예컨대 티에닐, 벤조티오페닐, 디벤조티오페닐, 티안트레닐, 푸릴, 푸르푸릴, 2H-피라닐, 벤조푸라닐, 이소벤조푸라닐, 디벤조푸라닐, 페녹시티에닐, 피롤릴, 이미다졸릴, 피라졸릴, 피리딜, 비피리딜, 트리아지닐, 피리미디닐, 피라지닐, 피리다지닐, 인돌리지닐, 이소인돌릴, 인돌릴, 인다졸릴, 퓨리닐, 퀴놀리지닐, 키놀릴, 이소키놀릴, 프탈라지닐, 나프티리디닐, 키녹살리닐, 키나졸리닐, 신놀리닐, 프테리디닐, 카르바졸릴, 카르볼리닐, 벤조트리아졸릴, 벤족사졸릴, 페난트리디닐, 아크리디닐, 피리미디닐, 페난트롤리닐, 페나지닐, 이소티아졸릴, 페노티아지닐, 이속사졸릴, 푸라자닐, 4-이미다조[1,2-a]벤즈이미다조일, 5-벤즈이미다조[1,2-a]벤즈이미다조일, 카르바졸릴 또는 페녹사지닐이고, 이는 비치환되거나 또는 치환될 수 있다. 벤즈이미다조[1,2-a]벤즈이미다조-5-일, 벤즈이미다조[1,2-a]벤즈이미다조-2-일, 카르바졸릴 및 디벤조푸라닐이 C2-C14헤테로아릴 기의 예이다.C 2 -C 30 heteroaryl refers to a ring or condensed ring system having 5 to 7 ring atoms, wherein nitrogen, oxygen or sulfur is a possible hetero atom, typically 5 to 30 having at least 6 conjugated π-electrons Heterocyclic groups having atoms such as thienyl, benzothiophenyl, dibenzothiophenyl, thianthrenyl, furyl, furfuryl, 2H-pyranyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, phenoxy Citienyl, pyrrolyl, imidazolyl, pyrazolyl, pyridyl, bipyridyl, triazinyl, pyrimidinyl, pyrazinyl, pyridazinyl, indolizinyl, isoindolyl, indolyl, indazolyl, fury Neil, quinolinyl, quinolyl, isokinolyl, phthalazinyl, naphthyridinyl, kinoxalinyl, kinazolinyl, cynolinyl, pteridinyl, carbazolyl, carbolinyl, benzotriazolyl, ben Zoxazolyl, phenanthridinyl, acridinyl, pyrimidinyl, phenanthrolinyl, phenazinyl, isothiazolyl, phenothiazinyl, isoxazolyl, furazanyl, 4-imidazo[1,2-a]benzimi Dazoyl, 5-benzimidazo[1,2-a]benzimidazoyl, carbazolyl or phenoxazinyl, which may be unsubstituted or substituted. Benzimidazo[1,2-a]benzimidazo-5-yl, benzimidazo[1,2-a]benzimidazo-2-yl, carbazolyl and dibenzofuranyl are C 2 -C 14 It is an example of a heteroaryl group.
G에 의해 임의로 치환될 수 있는 C6-C24아릴렌 기는 전형적으로 페닐렌, 4-메틸페닐렌, 4-메톡시페닐렌, 나프틸렌, 특히 1-나프틸렌 또는 2-나프틸렌, 비페닐릴렌, 터페닐릴렌, 피레닐렌, 2- 또는 9-플루오레닐렌, 페난트릴렌 또는 안트릴렌이고, 이는 비치환되거나 또는 치환될 수 있다. 바람직한 C6-C24아릴렌 기는 1,3-페닐렌, 3,3'-비페닐릴렌, 3,3'-m-터페닐렌, 2- 또는 9-플루오레닐렌, 페난트릴렌이고, 이는 비치환되거나 또는 치환될 수 있다.C 6 -C 24 arylene groups which may be optionally substituted by G are typically phenylene, 4-methylphenylene, 4-methoxyphenylene, naphthylene, especially 1-naphthylene or 2-naphthylene, biphenylylene , Terphenylylene, pyrenylene, 2- or 9-fluorenylene, phenanthrene or anthylene, which may be unsubstituted or substituted. Preferred C 6 -C 24 arylene groups are 1,3-phenylene, 3,3'-biphenylylene, 3,3'-m-terphenylene, 2- or 9-fluorenylene, phenanthrene, It can be unsubstituted or substituted.
G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴렌 기는 5 내지 7개의 고리 원자를 갖는 고리 또는 축합 고리계를 나타내고, 여기서 질소, 산소 또는 황이 가능한 헤테로 원자이고, 전형적으로 적어도 6개의 공액 π-전자를 갖는 5 내지 30개의 원자를 갖는 헤테로시클릭 기, 예컨대 티에닐렌, 벤조티오페닐렌, 디벤조티오페닐렌, 티안트레닐렌, 푸릴렌, 푸르푸릴렌, 2H-피라닐렌, 벤조푸라닐렌, 이소벤조푸라닐렌, 디벤조푸라닐렌, 페녹시티에닐렌, 피롤릴렌, 이미다졸릴렌, 피라졸릴렌, 피리딜렌, 비피리딜렌, 트리아지닐렌, 피리미디닐렌, 피라지닐렌, 피리다지닐렌, 인돌리지닐렌, 이소인돌릴렌, 인돌릴렌, 인다졸릴렌, 퓨리닐렌, 퀴놀리지닐렌, 키놀릴렌, 이소키놀릴렌, 프탈라지닐렌, 나프티리디닐렌, 키녹살리닐렌, 키나졸리닐렌, 신놀리닐렌, 프테리디닐렌, 카르볼리닐렌, 벤조트리아졸릴렌, 벤족사졸릴렌, 페난트리디닐렌, 아크리디닐렌, 피리미디닐렌, 페난트롤리닐렌, 페나지닐렌, 이소티아졸릴렌, 페노티아지닐렌, 이속사졸릴렌, 푸라자닐렌, 카르바졸릴렌, 벤즈이미다조[1,2-a]벤즈이미다조-2,5-일렌 또는 페녹사지닐렌이고, 이는 비치환되거나 또는 치환될 수 있다. 바람직한 C2-C30헤테로아릴렌 기는 피리딜렌, 트리아지닐렌, 피리미디닐렌, 카르바졸릴렌, 디벤조푸라닐렌 및 벤즈이미다조[1,2-a]벤즈이미다조-2,5-일렌 ()이고, 이는 비치환되거나, 또는 특히 C6-C10아릴, C1-C4알킬에 의해 치환된 C6-C10아릴; 또는 C2-C14헤테로아릴에 의해 치환될 수 있다.A C 2 -C 30 heteroarylene group optionally substituted by G represents a ring or condensed ring system having 5 to 7 ring atoms, wherein nitrogen, oxygen or sulfur is a possible hetero atom, typically at least 6 conjugates Heterocyclic groups having 5 to 30 atoms with π-electrons, such as thienylene, benzothiophenylene, dibenzothiophenylene, thiantrenylene, furylene, furfurylene, 2H-pyranylene, benzofura Nylene, isobenzofuranylene, dibenzofuranylene, phenoxythienylene, pyrrolylene, imidazolylene, pyrazolylene, pyridylene, bipyridylene, triazinylene, pyrimidinylene, pyrazinylene, pyridane Genylene, indolizinylene, isoindolelene, indolylene, indazolylene, purinylene, quinolizinylene, kinoylene, isokinolelene, phthalazinylene, naphthyridinylene, kinoxalinylene, Kinazolinylene, cynolinylene, pteridinylene, carbolinylene, benzotriazolylene, benzoxazolylene, phenanthridinylene, acridinylene, pyrimidinylene, phenanthrolinylene, phenazinylene, isothia Zolylene, phenothiazinylene, isoxazolylene, furazanilen, carbazolylene, benzimidazo[1,2-a]benzimidazo-2,5-ylene or phenoxazinylene, which is a beach May be substituted or substituted. Preferred C 2 -C 30 heteroarylene groups are pyridylene, triazinylene, pyrimidinylene, carbazolylene, dibenzofuranylene and benzimidazo[1,2-a]benzimidazo-2,5-ylene ( ), And which is unsubstituted or, especially, or C 6 -C 10 aryl, C 1 -C 4 alkyl, C 6 -C 10 aryl which is substituted by; Or C 2 -C 14 heteroaryl.
상기 언급된 기의 가능한 치환기는 C1-C8알킬, 히드록실 기, 메르캅토 기, C1-C8알콕시, C1-C8알킬티오, 할로겐, 할로-C1-C8알킬 또는 시아노 기이다.Possible substituents for the aforementioned groups are C 1 -C 8 alkyl, hydroxyl groups, mercapto groups, C 1 -C 8 alkoxy, C 1 -C 8 alkylthio, halogen, halo-C 1 -C 8 alkyl or cyan It is Nogi.
C6-C24아릴 (C6-C18아릴) 및 C2-C30헤테로아릴 기는 바람직하게는 1개 이상의 C1-C8알킬 기에 의해 치환된다.C 6 -C 24 aryl (C 6 -C 18 aryl) and C 2 -C 30 heteroaryl groups are preferably substituted by one or more C 1 -C 8 alkyl groups.
치환기가 기에 1회 초과로 존재하는 경우에, 이는 각 경우에 상이할 수 있다.When a substituent is present more than once in a group, it can be different in each case.
어구 "G에 의해 치환된"은 1개 이상, 특히 1 내지 3개의 치환기 G가 존재할 수 있음을 의미한다.The phrase "substituted by G" means that there may be one or more, especially one to three substituents G.
상기 기재된 바와 같이, 상기 언급된 기는 E에 의해 치환될 수 있고/거나, 원하는 경우에, D가 개재될 수 있다. 개재는 물론 기가 단일 결합에 의해 서로 결합된 적어도 2개의 탄소 원자를 함유하는 경우에만 가능하고; C6-C18아릴은 개재되지 않으며; 개재된 아릴알킬은 알킬 모이어티에서 단위 D를 함유한다. 1개 이상의 E에 의해 치환되고/거나 1개 이상의 단위 D가 개재된 C1-C18알킬은, 예를 들어 (CH2CH2O)1-9-Rx (여기서, Rx는 H 또는 C1-C10알킬 또는 C2-C10알카노일 (예를 들어, CO-CH(C2H5)C4H9)임), CH2-CH(ORy')-CH2-O-Ry (여기서, Ry는 C1-C18알킬, C5-C12시클로알킬, 페닐, C7-C15페닐알킬이고, Ry'는 Ry와 동일한 정의를 포괄하거나 또는 H임);As described above, the above-mentioned groups may be substituted by E and/or D may be interposed if desired. Intervening as well as if the group contains at least two carbon atoms bonded to each other by a single bond; C 6 -C 18 aryl is not interposed; The intervening arylalkyl contains unit D in the alkyl moiety. C 1 -C 18 alkyl substituted by one or more E and/or interrupted by one or more units D is, for example, (CH 2 CH 2 O) 1-9 -R x (where R x is H or C 1 -C 10 alkyl or C 2 -C 10 alkanoyl (eg, CO-CH(C 2 H 5 )C 4 H 9 )), CH 2 -CH(OR y' )-CH 2 -OR y (where R y is C 1 -C 18 alkyl, C 5 -C 12 cycloalkyl, phenyl, C 7 -C 15 phenylalkyl, R y′ encompasses the same definition as R y or is H);
C1-C8알킬렌-COO-Rz, 예를 들어 CH2COORz, CH(CH3)COORz, C(CH3)2COORz (여기서, Rz는 H, C1-C18알킬, (CH2CH2O)1-9-Rx이고, Rx는 상기 나타낸 정의를 포괄함);C 1 -C 8 alkylene-COO-R z , for example CH 2 COOR z , CH(CH 3 )COOR z , C(CH 3 ) 2 COOR z (where R z is H, C 1 -C 18 Alkyl, (CH 2 CH 2 O) 1-9 -R x , R x encompasses the definitions indicated above);
CH2CH2-O-CO-CH=CH2; CH2CH(OH)CH2-O-CO-C(CH3)=CH2이다.CH 2 CH 2 -O-CO-CH=CH 2 ; CH 2 CH(OH)CH 2 -O-CO-C(CH 3 )=CH 2 .
의 합성은, 예를 들어 문헌 [Achour, Reddouane; Zniber, Rachid, Bulletin des Societes Chimiques Belges 96 (1987) 787-92]에 기재되어 있다. The synthesis of, for example, Achour, Reddouane; Zniber, Rachid, Bulletin des Societes Chimiques Belges 96 (1987) 787-92.
화학식 의 적합한 기본 골격은 상업적으로 입수가능하거나 (특히 X가 S, O, NH인 경우에), 또는 통상의 기술자에게 공지된 방법에 의해 수득될 수 있다. WO2010079051 및 EP1885818을 참조한다.Chemical formula Suitable basic frameworks for are commercially available (especially when X is S, O, NH), or can be obtained by methods known to those skilled in the art. See WO2010079051 and EP1885818.
할로겐화는 통상의 기술자에게 공지된 방법에 의해 수행될 수 있다. 화학식 (II) 2,8 위치 (디벤조푸란 및 디벤조티오펜) 또는 3,6 위치 (카르바졸)의 기본 골격의 3 및 6 위치 (디브로민화), 또는 3 또는 6 위치 (모노브로민화)에서의 브로민화 또는 아이오딘화가 바람직하다.Halogenation can be performed by methods known to those skilled in the art. 3 and 6 positions (dibromination) of the basic backbone of the formula (II) 2,8 positions (dibenzofuran and dibenzothiophene) or 3,6 positions (carbazole), or 3 or 6 positions (monobromination Bromine or iodination in) is preferred.
임의로 치환된 디벤조푸란, 디벤조티오펜 및 카르바졸은 빙초산 또는 클로로포름 중에서 브로민 또는 NBS를 사용하여 2,8 위치 (디벤조푸란 및 디벤조티오펜) 또는 3,6 위치 (카르바졸)에서 디브로민화될 수 있다. 예를 들어, Br2를 사용한 브로민화는 저온, 예를 들어 0℃에서 빙초산 또는 클로로포름 중에서 수행될 수 있다. 적합한 방법은, 예를 들어 X= NPh인 경우에는 문헌 [M. Park, J.R. Buck, C.J. Rizzo, Tetrahedron, 54 (1998) 12707-12714]에 기재되어 있고, X= S인 경우에는 문헌 [W. Yang et al., J. Mater. Chem. 13 (2003) 1351]에 기재되어 있다. 또한, 3,6-디브로모카르바졸, 3,6-디브로모-9-페닐카르바졸, 2,8-디브로모디벤조티오펜, 2,8-디브로모디벤조푸란, 2-브로모카르바졸, 3-브로모디벤조티오펜, 3-브로모디벤조푸란, 3-브로모카르바졸, 2-브로모디벤조티오펜 및 2-브로모디벤조푸란은 상업적으로 입수가능하다.The optionally substituted dibenzofuran, dibenzothiophene and carbazole are in glacial acetic acid or chloroform at 2,8 positions (dibenzofuran and dibenzothiophene) or 3,6 positions (carbazole) using bromine or NBS. Can be dibrominated. For example, bromination with Br 2 can be carried out in glacial acetic acid or chloroform at low temperatures, eg 0°C. A suitable method is, for example, X=NPh. Park, JR Buck, CJ Rizzo, Tetrahedron, 54 (1998) 12707-12714, and when X=S, see W. Yang et al., J. Mater. Chem. 13 (2003) 1351. In addition, 3,6-dibromocarbazole, 3,6-dibromo-9-phenylcarbazole, 2,8-dibromodibenzothiophene, 2,8-dibromodibenzofuran, 2-bro Mocarbazole, 3-bromodibenzothiophene, 3-bromodibenzofuran, 3-bromocarbazole, 2-bromodibenzothiophene and 2-bromodibenzofuran are commercially available.
디벤조푸란 (및 디벤조티오펜에 대해 유사하게)의 4 위치에서의 모노브로민화는, 예를 들어 문헌 [J. Am. Chem. Soc. 1984, 106, 7150]에 기재되어 있다. 디벤조푸란 (디벤조티오펜)은 니트로화, 환원 및 후속 샌드마이어(Sandmeyer) 반응을 포함하는, 통상의 기술자에게 공지된 순서에 의해 3 위치에서 모노브로민화될 수 있다.Monobromination at the 4 position of dibenzofuran (and similarly for dibenzothiophene) is described, for example, in J. Am. Chem. Soc. 1984, 106, 7150. Dibenzofuran (dibenzothiophene) can be monobrominated at the 3 position by procedures known to those skilled in the art, including nitration, reduction and subsequent Sandmeyer reactions.
디벤조푸란 또는 디벤조티오펜의 2 위치에서의 모노브로민화 및 카르바졸의 3 위치에서의 모노브로민화는, 단지 1 당량의 브로민 또는 NBS를 첨가하는 것을 제외하고는 디브로민화와 유사하게 실행된다.Monobromination at position 2 of dibenzofuran or dibenzothiophene and monobromination at position 3 of carbazole are similar to dibromination except adding only one equivalent of bromine or NBS. Is executed.
대안적으로, 아이오딘화 디벤조푸란, 디벤조티오펜 및 카르바졸을 이용하는 것이 또한 가능하다. 제조는 특히 문헌 [Tetrahedron. Lett. 47 (2006) 6957-6960, Eur. J. Inorg. Chem. 24 (2005) 4976-4984, J. Heterocyclic Chem. 39 (2002) 933-941, J. Am. Chem. Soc. 124 (2002) 11900-11907, J. Heterocyclic Chem, 38 (2001) 77-87]에 기재되어 있다.Alternatively, it is also possible to use iodinated dibenzofuran, dibenzothiophene and carbazole. Manufacturing is especially described in Tetrahedron. Lett. 47 (2006) 6957-6960, Eur. J. Inorg. Chem. 24 (2005) 4976-4984, J. Heterocyclic Chem. 39 (2002) 933-941, J. Am. Chem. Soc. 124 (2002) 11900-11907, J. Heterocyclic Chem, 38 (2001) 77-87.
친핵성 치환을 위해, Cl- 또는 F-치환된 디벤조푸란, 디벤조티오펜 및 카르바졸이 필요하다. 염소화는 특히 문헌 [J. Heterocyclic Chemistry, 34 (1997) 891-900, Org. Lett., 6 (2004) 3501-3504; J. Chem. Soc. [Section] C: Organic, 16 (1971) 2775-7, Tetrahedron Lett. 25 (1984) 5363-6, J. Org. Chem. 69 (2004) 8177-8182]에 기재되어 있다. 플루오린화는 문헌 [J. Org. Chem. 63 (1998) 878-880 및 J. Chem. Soc., Perkin Trans. 2, 5 (2002) 953-957]에 기재되어 있다.For nucleophilic substitution, Cl- or F-substituted dibenzofuran, dibenzothiophene and carbazole are needed. Chlorination is specifically described in J. Heterocyclic Chemistry, 34 (1997) 891-900, Org. Lett., 6 (2004) 3501-3504; J. Chem. Soc. [Section] C: Organic, 16 (1971) 2775-7, Tetrahedron Lett. 25 (1984) 5363-6, J. Org. Chem. 69 (2004) 8177-8182. Fluorination is described in J. Org. Chem. 63 (1998) 878-880 and J. Chem. Soc., Perkin Trans. 2, 5 (2002) 953-957.
기 의 도입은 염기의 존재 하에 수행된다. 적합한 염기는 통상의 기술자에게 공지되어 있으며, 바람직하게는 알칼리 금속 및 알칼리 토금속 히드록시드, 예컨대 NaOH, KOH, Ca(OH)2, 알칼리 금속 히드라이드, 예컨대 NaH, KH, 알칼리 금속 아미드, 예컨대 NaNH2, 알칼리 금속 또는 알칼리 토금속 카르보네이트, 예컨대 K2CO3 또는 Cs2CO3, 및 알칼리 금속 알콕시드, 예컨대 NaOMe, NaOEt로 이루어진 군으로부터 선택된다. 또한, 상기 언급된 염기의 혼합물이 적합하다. NaOH, KOH, NaH 또는 K2CO3이 특히 바람직하다.group The introduction of is carried out in the presence of a base. Suitable bases are known to the skilled person and are preferably alkali metal and alkaline earth metal hydroxides such as NaOH, KOH, Ca(OH) 2 , alkali metal hydrides such as NaH, KH, alkali metal amides such as NaNH 2 , alkali metal or alkaline earth metal carbonates, such as K 2 CO 3 or Cs 2 CO 3 , and alkali metal alkoxides, such as NaOMe, NaOEt. Also suitable are mixtures of the bases mentioned above. NaOH, KOH, NaH or K 2 CO 3 are particularly preferred.
헤테로아릴화는, 예를 들어 화학식 의 할로겐화 화합물에 대한 의 구리-촉매화 커플링 (울만(Ullmann) 반응)에 의해 수행될 수 있다.Heteroarylization is, for example, a formula For halogenated compounds Copper-catalyzed coupling (Ullmann reaction).
N-아릴화는, 예를 들어 문헌 [H. Gilman and D. A. Shirley, J. Am. Chem. Soc. 66 (1944) 888; D. Li et al., Dyes and Pigments 49 (2001) 181 - 186, 및 Eur. J. Org. Chem. (2007) 2147-2151]에 개시되어 있다. 상기 반응은 용매 또는 용융물 중에서 수행될 수 있다. 적합한 용매는, 예를 들어 (극성) 비양성자성 용매, 예컨대 디메틸 술폭시드, 디메틸포름아미드, NMP, 트리데칸 또는 알콜이다.N-arylation is described, for example, in H. Gilman and D. A. Shirley, J. Am. Chem. Soc. 66 (1944) 888; D. Li et al., Dyes and Pigments 49 (2001) 181-186, and Eur. J. Org. Chem. (2007) 2147-2151. The reaction can be carried out in a solvent or melt. Suitable solvents are, for example (polar) aprotic solvents, such as dimethyl sulfoxide, dimethylformamide, NMP, tridecane or alcohol.
9-(8-브로모디벤조푸란-2-일)카르바졸 의 합성은 WO2010079051에 기재되어 있다. 2-브로모-8-아이오도-디벤조푸란 의 합성은 EP1885818에 기재되어 있다.9-(8-bromodibenzofuran-2-yl)carbazole The synthesis of is described in WO2010079051. 2-bromo-8-iodo-dibenzofuran The synthesis of is described in EP1885818.
화학식 의 화합물에 대한 가능한 합성 경로는 하기 반응식에 나타내었다:Chemical formula The possible synthetic routes for the compounds of are shown in the following scheme:
문헌 [Angew. Chem. Int. Ed. 46 (2007)1627-1629 및 Synthesis 20 (2009) 3493]을 참조한다.See Angew. Chem. Int. Ed. 46 (2007) 1627-1629 and Synthesis 20 (2009) 3493.
디보론산 또는 디보로네이트 기 함유 디벤조푸란, 디벤조티오펜 및 카르바졸은 경로 수를 증가시킴으로써 용이하게 제조될 수 있다. 합성 경로의 개요는, 예를 들어 문헌 [Angew. Chem. Int. Ed. 48 (2009) 9240 - 9261]에 주어져 있다.Dibenzofuran, dibenzothiophene and carbazole containing diboronic acid or diboronate groups can be easily prepared by increasing the number of pathways. For an overview of synthetic routes, see, eg, Angew. Chem. Int. Ed. 48 (2009) 9240-9261.
한 통상적인 경로에 의해 디보론산 또는 디보로네이트 기 함유 디벤조푸란, 디벤조티오펜 및 카르바졸은 용매, 예컨대 예를 들어 디메틸 포름아미드, 디메틸 술폭시드, 디옥산 및/또는 톨루엔 중에서 촉매, 예컨대 예를 들어 [1,1'-비스(디페닐포스피노)페로센]디클로로팔라듐(II), 착물 (Pd(Cl)2(dppf)), 및 염기, 예컨대 예를 들어 아세트산칼륨의 존재 하에 할로겐화 디벤조푸란, 디벤조티오펜 및 카르바졸을 와 반응시킴으로써 수득될 수 있고 (문헌 [Prasad Appukkuttan et al., Synlett 8 (2003) 1204] 참조), 여기서 Y1은 각 경우에 독립적으로 C1-C18알킬 기이고, Y2는 각 경우에 독립적으로 C2-C10알킬렌 기, 예컨대 -CY3Y4-CY5Y6- 또는 -CY7Y8-CY9Y10-CY11Y12-이고, 여기서 Y3, Y4, Y5, Y6, Y7, Y8, Y9, Y10, Y11 및 Y12는 서로 독립적으로 수소 또는 C1-C18알킬 기, 특히 -C(CH3)2C(CH3)2-, -C(CH3)2CH2C(CH3)2- 또는 -CH2C(CH3)2CH2-이고, Y13 및 Y14는 서로 독립적으로 수소 또는 C1-C18알킬 기이다.Dibenzofuran, dibenzothiophene and carbazole containing diboronic acid or diboronate groups by one common route are catalysts such as dimethyl formamide, dimethyl sulfoxide, dioxane and/or toluene in a solvent such as For example [1,1'-bis(diphenylphosphino)ferrocene]dichloropalladium(II), complexes (Pd(Cl) 2 (dppf)), and halogenated di in the presence of bases such as for example potassium acetate Benzofuran, dibenzothiophene and carbazole It can be obtained by reacting with (see Prasad Appukkuttan et al., Synlett 8 (2003) 1204), wherein Y 1 is independently a C 1 -C 18 alkyl group in each case, and Y 2 is in each case. Independently a C 2 -C 10 alkylene group, such as -CY 3 Y 4 -CY 5 Y 6 -or -CY 7 Y 8 -CY 9 Y 10 -CY 11 Y 12 -, where Y 3 , Y 4 , Y 5 , Y 6 , Y 7 , Y 8 , Y 9 , Y 10 , Y 11 and Y 12 are independently of each other hydrogen or a C 1 -C 18 alkyl group, in particular -C(CH 3 ) 2 C(CH 3 ) 2 -, -C(CH 3 ) 2 CH 2 C(CH 3 ) 2 -or -CH 2 C(CH 3 ) 2 CH 2 -, Y 13 and Y 14 are independently of each other hydrogen or C 1 -C 18 alkyl It is Ki.
디보론산 또는 디보로네이트 기 함유 디벤조푸란, 디벤조티오펜 및 카르바졸은 또한 할로겐화 디벤조푸란, 디벤조티오펜 및 카르바졸을 알킬 리튬 시약, 예컨대 예를 들어 n-부틸 리튬 또는 t-부틸 리튬과 반응시키고, 이어서 보론산 에스테르, 예컨대 예를 들어 B(이소프로폭시)3, B(메톡시)3 또는 와 반응시킴으로써 제조될 수 있다 (문헌 [Synthesis (2000) 442-446] 참조).Dibenzofuran, dibenzothiophene and carbazole containing diboronic acid or diboronate groups also include halogenated dibenzofuran, dibenzothiophene and carbazole with alkyl lithium reagents such as n-butyl lithium or t-butyl Reacted with lithium, followed by a boronic acid ester, such as for example B (isopropoxy) 3 , B (methoxy) 3 or It can be prepared by reacting with (see Synthesis (2000) 442-446).
디보론산 또는 디보로네이트 기 함유 디벤조푸란, 디벤조티오펜 및 카르바졸은 또한 디벤조푸란, 디벤조티오펜 및 카르바졸을 리튬 아미드, 예컨대 예를 들어 리튬 디이소프로필아미드 (LDA)와 반응시키고, 이어서 보론산 에스테르, 예컨대 예를 들어 B(이소프로폭시)3, B(메톡시)3 또는 와 반응시킴으로써 제조될 수 있다 (J. Org. Chem. 73 (2008) 2176-2181).Dibenzofuran, dibenzothiophene and carbazole containing diboronic acid or diboronate groups also react dibenzofuran, dibenzothiophene and carbazole with lithium amides such as lithium diisopropylamide (LDA) And then boronic acid esters such as B (isopropoxy) 3 , B (methoxy) 3 or It can be prepared by reacting with (J. Org. Chem. 73 (2008) 2176-2181).
디보론산 또는 디보로네이트 기 함유 디벤조푸란, 디벤조티오펜 및 카르바졸, 예컨대 예를 들어 은 용매 중에서 촉매의 존재 하에 등몰량의 할로겐화 디벤조푸란, 디벤조티오펜, 카르바졸 및 4H-이미다조[1,2-a]이미다졸, 예컨대 예를 들어 와 반응시킬 수 있다. 촉매는 μ-할로(트리이소프로필포스핀)(η3-알릴)팔라듐(II) 유형 중 하나일 수 있다 (예를 들어, WO99/47474 참조).Dibenzofuran, dibenzothiophene and carbazole containing diboronic acid or diboronate groups, such as, for example Equivalent amounts of halogenated dibenzofuran, dibenzothiophene, carbazole and 4H-imidazo[1,2-a]imidazole in the presence of a catalyst in a silver solvent such as, for example Can react with. The catalyst may be of the μ-halo (triisopropylphosphine) (η 3 -allyl) palladium(II) type (see eg WO99/47474).
바람직하게는, 스즈키(Suzuki) 반응은 유기 용매, 예컨대 방향족 탄화수소 또는 통상의 극성 유기 용매, 예컨대 벤젠, 톨루엔, 크실렌, 테트라히드로푸란 또는 디옥산, 또는 이들의 혼합물, 가장 바람직하게는 톨루엔의 존재 하에 수행된다. 통상적으로, 용매의 양은 보론산 유도체의 몰당 1 내지 10 l 범위에서 선택된다. 또한 바람직하게는, 상기 반응은 불활성 분위기, 예컨대 질소 또는 아르곤 하에 수행된다. 추가로, 수성 염기, 예컨대 알칼리 금속 히드록시드 또는 카르보네이트, 예컨대 NaOH, KOH, Na2CO3, K2CO3, Cs2CO3 등의 존재 하에 반응을 수행하는 것이 바람직하고, 바람직하게는 수성 K2CO3 용액이 선택된다. 통상적으로, 염기 대 보론산 또는 보론산 에스테르 유도체의 몰비는 0.5:1 내지 50:1 범위, 매우 특히 1:1에서 선택된다. 일반적으로, 반응 온도는 40 내지 180℃ 범위에서, 바람직하게는 환류 조건 하에 선택된다. 바람직하게는, 반응 시간은 1 내지 80시간, 보다 바람직하게는 20 내지 72시간 범위에서 선택된다. 바람직한 실시양태에서, 커플링 반응 또는 중축합 반응을 위한 통상의 촉매, 바람직하게는 Pd-기재 촉매가 사용되며, 이는 WO2007/101820에 기재되어 있다. 팔라듐 화합물은, 폐쇄될 결합의 수를 기준으로 하여 1:10000 내지 1:50, 바람직하게는 1:5000 내지 1:200의 비로 첨가된다. 예를 들어, 팔라듐(II) 염, 예컨대 PdAc2 또는 Pd2dba3의 사용 및 (여기서, 임)로 이루어진 군으로부터 선택된 리간드의 첨가가 바람직하다. 리간드는 Pd를 기준으로 하여 1:1 내지 1:10의 비로 첨가된다. 또한 바람직하게는, 촉매는 용액 또는 현탁액 중으로서 첨가된다. 바람직하게는, 적절한 유기 용매, 예컨대 상기 기재된 것, 바람직하게는 벤젠, 톨루엔, 크실렌, THF, 디옥산, 보다 바람직하게는 톨루엔 또는 이들의 혼합물이 사용된다. 용매의 양은 통상적으로 보론산 유도체의 몰당 1 내지 10 l 범위에서 선택된다. 유기 염기, 예컨대 예를 들어 테트라알킬암모늄 히드록시드, 및 상 이동 촉매, 예컨대 예를 들어 TBAB는 붕소의 활성을 촉진시킬 수 있다 (예를 들어, 문헌 [Leadbeater & Marco; Angew. Chem. Int. Ed. Eng. 42 (2003) 1407] 및 그에 인용된 참고문헌 참조). 반응 조건의 다른 변형은 문헌 [T. I. Wallow and B. M. Novak, J. Org. Chem. 59 (1994) 5034-5037; 및 M. Remmers, M. Schulze, G. Wegner, Macromol. Rapid Commun. 17 (1996) 239-252 및 G. A. Molander und B. Canturk, Angew. Chem. , 121 (2009) 9404 - 9425]에 주어져 있다.Preferably, the Suzuki reaction is in the presence of an organic solvent, such as an aromatic hydrocarbon or a conventional polar organic solvent, such as benzene, toluene, xylene, tetrahydrofuran or dioxane, or mixtures thereof, most preferably toluene. Is performed. Typically, the amount of solvent is selected from 1 to 10 l per mole of boronic acid derivative. Also preferably, the reaction is carried out under an inert atmosphere, such as nitrogen or argon. Additionally, it is preferred to carry out the reaction in the presence of an aqueous base, such as an alkali metal hydroxide or carbonate, such as NaOH, KOH, Na 2 CO 3 , K 2 CO 3 , Cs 2 CO 3 , and preferably The aqueous K 2 CO 3 solution is selected. Typically, the molar ratio of base to boronic acid or boronic acid ester derivative is selected in the range from 0.5:1 to 50:1, very particularly 1:1. Generally, the reaction temperature is selected in the range of 40 to 180°C, preferably under reflux conditions. Preferably, the reaction time is selected from 1 to 80 hours, more preferably from 20 to 72 hours. In a preferred embodiment, conventional catalysts for coupling reactions or polycondensation reactions are used, preferably Pd-based catalysts, which are described in WO2007/101820. The palladium compound is added in a ratio of 1:10000 to 1:50, preferably 1:5000 to 1:200, based on the number of bonds to be closed. For example, the use of palladium(II) salts such as PdAc 2 or Pd 2 dba 3 and (here, Preferred is the addition of a ligand selected from the group consisting of Im). The ligand is added in a ratio of 1:1 to 1:10 based on Pd. Also preferably, the catalyst is added as a solution or suspension. Preferably, suitable organic solvents are used, such as those described above, preferably benzene, toluene, xylene, THF, dioxane, more preferably toluene or mixtures thereof. The amount of solvent is usually selected from 1 to 10 l per mole of boronic acid derivative. Organic bases such as tetraalkylammonium hydroxide, and phase transfer catalysts such as TBAB, for example, can promote the activity of boron (see, eg, Leadbeater &Marco; Angew. Chem. Int. Ed. Eng. 42 (2003) 1407 and references cited therein). Other variations of reaction conditions are described in TI Wallow and BM Novak, J. Org. Chem. 59 (1994) 5034-5037; And M. Remmers, M. Schulze, G. Wegner, Macromol. Rapid Commun. 17 (1996) 239-252 and GA Molander und B. Canturk, Angew. Chem. , 121 (2009) 9404-9425.
아자- 및 디아자-디벤조푸란 출발 물질의 합성은 문헌에 공지되어 있거나, 또는 공지된 절차와 유사하게 수행될 수 있다.Synthesis of aza- and diaza-dibenzofuran starting materials is known in the literature or can be carried out analogously to known procedures.
JP2011084531은, 예를 들어 2-브로모피리딘-3-올로부터 출발하는 2개의 단계로 염기 촉매화 고리화를 사용하여 벤조푸로[3,2-b]피리딘을 합성하는 것을 기재하고 있다. 브로민화 화합물은 황산은의 존재 하의 브로민을 사용한 브로민화에 의해 수득된다.JP2011084531 describes, for example, the synthesis of benzofuro[3,2-b]pyridine using base catalyzed cyclization in two steps starting from 2-bromopyridin-3-ol. The bromination compound is obtained by bromination with bromine in the presence of silver sulfate.
US2010/0187984는, 예를 들어 2-아미노-5-클로로피리딘으로부터 출발하는 3개의 단계로 디아조늄 염의 고리화를 사용하여 3,6-디클로로-벤조푸로[2,3-b]피리딘을 합성하는 것을 기재하고 있다.US2010/0187984 synthesizes 3,6-dichloro-benzofuro[2,3-b]pyridine using cyclization of a diazonium salt in three steps, for example starting from 2-amino-5-chloropyridine It describes.
문헌 [L. Kaczmarek, Polish Journal of Chemistry 59 (1985) 1141]은 2-(3-아미노-2-피리딜)피리딘-3-아민으로부터 출발하여 디아조늄 염의 산 촉매화 고리화를 사용하여 푸로[3,2-b:4,5-b]디피리딘을 합성하는 것을 기재하고 있다.[L. Kaczmarek, Polish Journal of Chemistry 59 (1985) 1141] uses furo[3,2- using acid catalyzed cyclization of diazonium salts starting from 2-(3-amino-2-pyridyl)pyridin-3-amine. It has been described to synthesize b:4,5-b]dipyridine.
JP2002284862는 2-(3-아미노-5-브로모-2-피리딜)-5-브로모-피리딘-3-아민으로부터 출발하여 디아조늄 염의 산 촉매화 고리화를 사용하여 2,7-디브로모-푸로[3,2-b:4,5-b]디피리딘을 합성하는 것을 기재하고 있다. 출발 물질의 합성은 문헌 [Y. Fort, Tetrahedron 50 (41),11893 (1994)]에 기재되어 있다.JP2002284862 is a 2,7-dibro using acid catalyzed cyclization of diazonium salt starting from 2-(3-amino-5-bromo-2-pyridyl)-5-bromo-pyridin-3-amine It describes the synthesis of parent-furo[3,2-b:4,5-b]dipyridine. The synthesis of starting materials is described in [Y. Fort, Tetrahedron 50 (41), 11893 (1994).
문헌 [J. Liu, J. Org. Chem. 73, 2951 (2008)]은, 예를 들어 구리 촉매화 고리화 단계를 사용하는 벤조푸로[2,3-c]피리딘의 합성을 기재하고 있다.[J. Liu, J. Org. Chem. 73, 2951 (2008) describe the synthesis of benzofuro[2,3-c]pyridine using, for example, a copper catalyzed cyclization step.
화합물 E-57에 대한 가능한 합성 경로는 하기 반응식에 나타내었다:The possible synthetic routes for Compound E-57 are shown in the scheme below:
화합물 A-11에 대한 가능한 합성 경로는 하기 반응식에 나타내었다:The possible synthetic routes for Compound A-11 are shown in the scheme below:
할로겐/금속 교환은 -78℃에서 nBuLi/THF, 또는 -78℃에서 tBuLi/THF로 수행된다. 이러한 화합물의 합성이 기재되어 있는 WO2010/079051을 참조한다.Halogen/metal exchange is carried out with nBuLi/THF at -78°C, or tBuLi/THF at -78°C. See WO2010/079051, where the synthesis of such compounds is described.
하기 화학식 (II)의 화합물이 화학식 (I)의 화합물의 제조에서의 신규 중간체이고, 본 발명의 추가의 대상을 형성한다.The compounds of formula (II) below are novel intermediates in the preparation of compounds of formula (I) and form a further subject of the invention.
(II) (II)
B1은 N 또는 CR81이고,B 1 is N or CR 81 ,
B2는 N 또는 CR82이고,B 2 is N or CR 82 ,
B3은 N 또는 CR83이고,B 3 is N or CR 83 ,
B4는 N 또는 CR84이고,B 4 is N or CR 84 ,
B5는 N 또는 CR85이고,B 5 is N or CR 85 ,
B6은 N 또는 CR86이고,B 6 is N or CR 86 ,
B7은 N 또는 CR87이고,B 7 is N or CR 87 ,
B8은 N 또는 CR88이고, 여기서 R81, R82, R83, R84, R85, R86, R87 및 R88은 서로 독립적으로 H, 임의로 E에 의해 치환될 수 있고/거나 D가 개재될 수 있는 C1-C25알킬 기; G에 의해 임의로 치환될 수 있는 C6-C24아릴 기, G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기; 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16 또는 -(A1)o-(A2)p-(A3)q-(A4)r-X1의 기이고,B 8 is N or CR 88 , wherein R 81 , R 82 , R 83 , R 84 , R 85 , R 86 , R 87 and R 88 independently of each other can be substituted by H, optionally E and/or D C 1 -C 25 alkyl group which may be interposed; A C 6 -C 24 aryl group optionally substituted by G, a C 2 -C 30 heteroaryl group optionally substituted by G; Formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 or -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) a group of r -X 1 ,
o는 0 또는 1이고, p는 0 또는 1이고, q는 0 또는 1이고, r은 0 또는 1이고,o is 0 or 1, p is 0 or 1, q is 0 or 1, r is 0 or 1,
치환기 R81, R82, R83, R84, R85, R86, R87 및 R88 중 적어도 1개는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-X1의 기를 나타내고; 여기서At least one of the substituents R 81 , R 82 , R 83 , R 84 , R 85 , R 86 , R 87 and R 88 is of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -( A 4 ) represents a group of r -X 1 ; here
X1은 Cl, Br 또는 I, ZnX12 (X12는 할로겐 원자임); -SnR207R208R209 (여기서, R207, R208 및 R209는 동일하거나 또는 상이하고, H 또는 C1-C8알킬이고, 여기서 2개의 라디칼은 임의로 공통 고리를 형성하고, 이들 라디칼은 임의로 분지형 또는 비분지형임); -B(OH)2, -B(OY1)2, , -BF4Na 또는 -BF4K (여기서 Y1은 각 경우에 독립적으로 C1-C18알킬 기이고, Y2는 각 경우에 독립적으로 C2-C10알킬렌 기이고, Y13 및 Y14는 서로 독립적으로 수소 또는 C1-C18알킬 기임)이고, o, p, q, r, G, A1, A2, A3, A4, R81, R82, R83, R84, R85, R86, R87 및 R88은 상기 정의된 바와 같다. 하기 화합물은 선행 기술로부터 공지되어 있으며, 제외된다:X 1 is Cl, Br or I, ZnX 12 (X 12 is a halogen atom); -SnR 207 R 208 R 209 (where R 207 , R 208 and R 209 are the same or different, H or C 1 -C 8 alkyl, where the two radicals optionally form a common ring, and these radicals are Optionally branched or unbranched); -B(OH) 2 , -B(OY 1 ) 2 , , -BF 4 Na or -BF 4 K (where Y 1 is independently a C 1 -C 18 alkyl group in each case, Y 2 is a C 2 -C 10 alkylene group independently in each case, Y 13 and Y 14 are independently of each other hydrogen or a C 1 -C 18 alkyl group), o, p, q, r, G, A 1 , A 2 , A 3 , A 4 , R 81 , R 82 , R 83 , R 84 , R 85 , R 86 , R 87 and R 88 are as defined above. The following compounds are known and excluded from the prior art:
. .
R81, R82, R83, R84, R85, R86, R87, R88, A1, A2, A3, A4 및 R16에 대해 원칙적으로는 화학식 (I)의 화합물의 경우에서와 동일한 것이 바람직하다.R 81 , R 82 , R 83 , R 84 , R 85 , R 86 , R 87 , R 88 , A 1 , For A 2 , A 3 , A 4 and R 16 it is in principle preferred to be the same as in the case of the compounds of formula (I).
X1이 Cl, Br 또는 I인 경우에, p는 0이고, q는 0이고 r은 0이고; 적어도 1개의 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-X1의 기에서의 o는 바람직하게는 1이다. X1이 -B(OH)2, -B(OY1)2, 인 화학식 (II)의 화합물이 바람직하다.When X 1 is Cl, Br or I, p is 0, q is 0 and r is 0; O in the group of at least one formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -X 1 is preferably 1. X 1 is -B(OH) 2 , -B(OY 1 ) 2 , Preference is given to compounds of formula (II).
화학식 (II)의 화합물 중에서, 화학식Among the compounds of formula (II), the formula
의 화합물이 바람직하고, 여기서 R81, R82, R83, R85, R86 및 R87은 상기 주어진 의미를 갖는다.Compounds of are preferred, wherein R 81 , R 82 , R 83 , R 85 , R 86 and R 87 have the meanings given above.
본 발명의 바람직한 실시양태에서, 화학식 (II'), (II"), (II"'), (II"") 및 (II""')의 화합물에서의 치환기 R81, R82, R83, R85, R86 및 R87 중 1개는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-X1의 기이다.In a preferred embodiment of the invention, the substituents R 81 , R 82 , R 83 in the compounds of formula (II'), (II"), (II"'), (II"") and (II""') , R 85 , one of R 86 and R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -X 1 .
본 발명의 또 다른 바람직한 실시양태에서, 화학식 (II'), (II"), (II"'), (II"") 및 (II""')의 화합물에서의 치환기 R81, R82, R83, R85, R86 및 R87 중 2개는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-X1의 기이다.In another preferred embodiment of the invention, the substituents R 81 , R 82 in the compounds of the formulas (II'), (II"), (II"'), (II"") and (II""'), Two of R 83 , R 85 , R 86 and R 87 are groups of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -X 1 .
바람직한 실시양태에서, 본 발명은 하기 화학식의 화합물에 관한 것이다.In a preferred embodiment, the invention relates to compounds of the formula
상기 식에서, R81, R82, R83, R85, R86 및 R87은 상기 정의된 바와 같다.In the above formula, R 81 , R 82 , R 83 , R 85 , R 86 and R 87 are as defined above.
본 발명의 바람직한 실시양태에서, 화학식 (IIa), (IIb), (IIc), (IId), (IIe), (IIf), (IIg), (IIh), (IIi), (IIj), (IIk), (IIl), (IIm), (IIn) 및 (IIo)의 화합물에서의 치환기 R81, R82, R83, R85, R86 및 R87 중 1개는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-X1의 기이다.In a preferred embodiment of the invention, formulas (IIa), (IIb), (IIc), (IId), (IIe), (IIf), (IIg), (IIh), (IIi), (IIj), ( Substituents R 81 , R 82 , R 83 in compounds of IIk), (IIl), (IIm), (IIn) and (IIo) One of R 85 , R 86 and R 87 is a group of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -X 1 .
본 발명의 또 다른 바람직한 실시양태에서, 화학식 (IIa), (IIb), (IIc), (IId), (IIe), (IIf), (IIg), (IIh), (IIi), (IIj), (IIk), (IIl), (IIm), (IIn) 및 (IIo)의 화합물에서의 치환기 R81, R82, R83, R85, R86 및 R87 중 2개는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-X1의 기이다.In another preferred embodiment of the invention, the formulas (IIa), (IIb), (IIc), (IId), (IIe), (IIf), (IIg), (IIh), (IIi), (IIj) , Substituents R 81 , R 82 , R 83 in the compounds of (IIk), (IIl), (IIm), (IIn) and (IIo), Two of R 85 , R 86 and R 87 are groups of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -X 1 .
화학식 (IIa), (IIb), (IIc), (IId), (IIe), (IIf), (IIi), (IIj), (IIl) 및 (IIn)의 화합물이 바람직하다. 화학식 (IIa), (IIb), (IIc), (IId), (IIe), (IIf), (IIj) 및 (IIn)의 화합물이 특히 바람직하다.Compounds of formulas (IIa), (IIb), (IIc), (IId), (IIe), (IIf), (IIi), (IIj), (IIl) and (IIn) are preferred. Particular preference is given to compounds of the formulas (IIa), (IIb), (IIc), (IId), (IIe), (IIf), (IIj) and (IIn).
중간체의 예는 하기 나타내었다:Examples of intermediates are shown below:
아자디벤조푸란의 브로민화는, 예를 들어 문헌 [J. Mater. Chem. 18 (2008) 1296-1301]에 기재되어 있는 카르바졸의 브로민화와 유사하게 수행될 수 있다.Bromidation of azadibenzofuran is described, for example, in J. Mater. Chem. 18 (2008) 1296-1301].
다른 브로민화 방법은, 예를 들어 문헌 [Helvetica Chimica Acta 89 (2006) 1123 및 SYNLETT 17 (2006) 2841-2845. 10.206]에 기재되어 있다Other bromination methods are described, for example, in Helvetica Chimica Acta 89 (2006) 1123 and SYNLETT. 17 ( 2006) 2841-2845. 10.206.
할로겐화제를 사용한 (III)의 선택적 할로겐화로 화학식 (II)의 화합물이 생성된다. 할로겐화제는, 예를 들어 N-클로로숙신이미드 (NCS), (Synlett 18 (2005) 2837-2842); Br2 (Synthesis 10 (2005) 1619-1624), N-브로모숙신이미드 (NBS) (Organic Letters 12 (2010) 2194-2197; Synlett (2006) 2841-2845), 1,3-디브로모-5,5-디메틸히단토인(DBH) (Organic Process Research & Development 10 (2006) 822-828, US2002/0151456), CuBr2 (Synthetic Communications 37 (2007) 1381-1388); R4NBr3 (Can. J. Chem. 67 (1989) 2062), N-아이오도숙신이미드 (NIS) (Synthesis 12 (2001) 1794-1799, J. Heterocyclic Chem. 39 (2002) 933), KI/KIO3 (Org. Lett. 9 (2007) 797, Macromolecules 44 (2011) 1405-1413), NaIO4/I2/H2SO4 또는 NaIO4/KI/H2SO4 (J. Heterocyclic Chem. 38 (2001) 77; J. Org. Chem. 75 (2010) 2578-2588); 일염화아이오딘 (ICl; Synthesis (2008) 221-224)이다. 추가의 방법은 문헌 [J. Org. Chem. 74 (2009) 3341-3349; J. Org. Chem. 71 (2006) 7422-7432, Eur. J. Org. Chem. (2008) 1065-1071, Chem. Asian J. 5 (2010) 2162 - 2167, Synthetic. Commun. 28 (1998) 3225]에 기재되어 있다.Selective halogenation of (III) with halogenating agents results in compounds of formula (II). Halogenating agents include, for example, N-chlorosuccinimide (NCS), (Synlett 18 (2005) 2837-2842); Br 2 (Synthesis 10 (2005) 1619-1624), N-bromosuccinimide (NBS) (Organic Letters 12 (2010) 2194-2197; Synlett (2006) 2841-2845), 1,3-dibromo -5,5-dimethylhydantoin (DBH) (Organic Process Research & Development 10 (2006) 822-828, US2002/0151456), CuBr 2 (Synthetic Communications 37 (2007) 1381-1388); R 4 NBr 3 (Can. J. Chem. 67 (1989) 2062), N-iodosuccinimide (NIS) (Synthesis 12 (2001) 1794-1799, J. Heterocyclic Chem. 39 (2002) 933), KI/KIO 3 (Org. Lett. 9 (2007) 797, Macromolecules 44 (2011) 1405-1413), NaIO 4 /I 2 /H 2 SO 4 or NaIO 4 /KI/H 2 SO 4 (J. Heterocyclic Chem 38 (2001) 77; J. Org. Chem. 75 (2010) 2578-2588); Iodine monochloride (ICl; Synthesis (2008) 221-224). Additional methods are described in J. Org. Chem. 74 (2009) 3341-3349; J. Org. Chem. 71 (2006) 7422-7432, Eur. J. Org. Chem. (2008) 1065-1071, Chem. Asian J. 5 (2010) 2162-2167, Synthetic. Commun. 28 (1998) 3225.
할로겐화에 사용될 수 있는 용매의 예는 디메틸포름아미드 (DMF), CH2Cl2, CHCl3, CCl4, 에탄올 (EtOH), 아세트산 (AcOH), H2SO4, C6H5Cl 및 이들의 혼합물이다. 할로겐화는 산 및 루이스 산, 각각 예컨대 예를 들어 H2SO4, ZrCl4, TiCl4, AlCl3, HfCl4 및 AlCl3의 존재 하에 수행될 수 있다 (Synlett 18 (2005) 2837-2842).Examples of solvents that can be used for halogenation are dimethylformamide (DMF), CH 2 Cl 2 , CHCl 3 , CCl 4 , ethanol (EtOH), acetic acid (AcOH), H 2 SO 4 , C 6 H 5 Cl and their It is a mixture. Halogenation can be carried out in the presence of an acid and a Lewis acid, such as for example H 2 SO 4 , ZrCl 4 , TiCl 4 , AlCl 3 , HfCl 4 and AlCl 3 (Synlett 18 (2005) 2837-2842).
X3이 Cl, Br 또는 I인 할로겐화 중간체 (II)는, 용매, 예컨대 예를 들어 디메틸 포름아미드, 디메틸 술폭시드, 디옥산 및/또는 톨루엔 중에서 촉매, 예컨대 예를 들어 [1,1'-비스(디페닐포스피노)페로센]디클로로팔라듐(II), 착물 (Pd(Cl)2(dppf)), 및 염기, 예컨대 예를 들어 아세트산칼륨의 존재 하에 할로겐화 중간체 (II)를 (Y1O)2B-B(OY1)2, 와 반응시킴으로써 보론산에스테르 중간체 (II)로 전환될 수 있다 (문헌 [Prasad Appukkuttan et al., Synlett 8 (2003) 1204] 참조).Halogenated intermediate (II) wherein X 3 is Cl, Br or I is a catalyst such as [1,1′-bis] in a solvent such as dimethyl formamide, dimethyl sulfoxide, dioxane and/or toluene. (Diphenylphosphino)ferrocene]dichloropalladium(II), complex (Pd(Cl) 2 (dppf)), and halogenated intermediate (II) in the presence of a base such as potassium acetate (Y 1 O) 2 BB(OY 1 ) 2 , Can be converted to boronic acid ester intermediate (II) (see Prasad Appukkuttan et al., Synlett 8 (2003) 1204).
보론산 시약의 제조의 개요는 문헌 [Angew. Chem. 121 (2009) 9404 - 9425, Chem. Rev. 95 (1995) 2457-2483, Angew. Chem. Int. Ed. 41 (2002) 4176-4211, Tetrahedron 66 (2010) 8121- 8136]에 주어져 있다.An overview of the preparation of boronic acid reagents is described in Angew. Chem. 121 (2009) 9404-9425, Chem. Rev. 95 (1995) 2457-2483, Angew. Chem. Int. Ed. 41 (2002) 4176-4211, Tetrahedron 66 (2010) 8121-8136.
디보론산 또는 디보로네이트 중간체 (II)는 또한 할로겐화 중간체 (II)를 알킬 리튬 시약, 예컨대 예를 들어 n-부틸 리튬 또는 t-부틸 리튬과 반응시키고, 이어서 보론산에스테르, 예컨대 예를 들어 B(이소프로폭시)3, B(메톡시)3 또는 와 반응시킴으로써 제조될 수 있다 (문헌 [Synthesis (2000) 442-446] 참조).The diboronic acid or diboronate intermediate (II) also reacts the halogenated intermediate (II) with an alkyl lithium reagent such as n-butyl lithium or t-butyl lithium, followed by a boronic acid ester such as B( Isopropoxy) 3 , B (methoxy) 3 or It can be prepared by reacting with (see Synthesis (2000) 442-446).
화학식 (I)의 화합물은 중간체 및 적합한 공-반응물로부터 출발하여, 예를 들어 스즈키-, 스틸(Stille)- 또는 네기시(Negishi)-커플링 반응에 의해 수득될 수 있다.The compounds of formula (I) can be obtained from intermediates and suitable co-reactants, for example by Suzuki-, Still- or Negishi-coupling reactions.
X1이 Cl, Br 또는 I인 할로겐화 중간체, 예컨대 예를 들어 는 용매, 예컨대 예를 들어 디메틸 포름아미드, 디메틸 술폭시드, 디옥산 및/또는 톨루엔 중에서 촉매, 예컨대 예를 들어 [1,1'-비스(디페닐포스피노)페로센]디클로로팔라듐(II), 착물 (Pd(Cl)2(dppf)), 및 염기, 예컨대 예를 들어 아세트산칼륨의 존재 하에 중간체 (N-2)를 X2-(A1)o-(A2)p-(A3)q-(A4)r-R16 (여기서, X2는 (Y1O)2B-, 임)과 반응시킴으로써 화학식 (I)의 화합물로 전환될 수 있다 (문헌 [Prasad Appukkuttan et al., Synlett 8 (2003) 1204] 참조).Halogenated intermediates wherein X 1 is Cl, Br or I, for example Is a catalyst such as [1,1'-bis(diphenylphosphino)ferrocene]dichloropalladium(II), complex, for example in a solvent such as dimethyl formamide, dimethyl sulfoxide, dioxane and/or toluene (Pd(Cl) 2 (dppf)), and intermediate (N-2) in the presence of a base such as, for example, potassium acetate, X 2 -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 (where X 2 is (Y 1 O) 2 B-, It can be converted to a compound of formula (I) by reacting with Im) (see Prasad Appukkuttan et al., Synlett 8 (2003) 1204).
화학식 (I)의 화합물은 전하 캐리어 전도성이 필요한 적용에 사용하기에 특히 적합하고, 특히 예를 들어 스위칭 소자, 예컨대 유기 트랜지스터, 예를 들어 유기 FET 및 유기 TFT, 유기 태양 전지 및 유기 발광 다이오드 (OLED)로부터 선택된 유기 전자장치 응용에 사용하기에 적합하고, 화학식 (I)의 화합물은 발광 층에서의 매트릭스 물질로서 및/또는 정공 및/또는 여기자 차단제 물질로서 및/또는 전자 및/또는 여기자 차단제 물질로서, 특히 인광 방출체와 조합하여 사용하기 위한 OLED에서 특히 적합한 것으로 밝혀졌다. 본 발명의 화학식 (I)의 화합물을 OLED에 사용하는 경우에, 우수한 효율 및 긴 수명을 가지며 특히 낮은 사용 및 작동 전압에서 작동될 수 있는 OLED가 획득된다. 본 발명의 화학식 (I)의 화합물은 특히, 청색 및 녹색 방출체, 예를 들어 청색광 또는 암청색광 방출체 (이들은 특히 인광 방출체임)를 위한 매트릭스 및/또는 정공/여기자 차단제 물질로서 사용하기에 적합하다. 또한, 화학식 (I)의 화합물은 스위칭 소자 및 유기 태양 전지로부터 선택된 유기 전자장치 응용에서의 전도체/보완적 물질로서 사용될 수 있다.The compounds of formula (I) are particularly suitable for use in applications where charge carrier conductivity is required, in particular for example switching elements such as organic transistors such as organic FETs and organic TFTs, organic solar cells and organic light emitting diodes (OLEDs). Suitable for use in organic electronics applications selected from ), the compound of formula (I) as a matrix material in the light emitting layer and/or as a hole and/or exciton blocker material and/or as an electron and/or exciton blocker material , Especially in OLEDs for use in combination with phosphorescent emitters. When the compounds of the formula (I) of the present invention are used in OLEDs, OLEDs are obtained which have good efficiency and long life and can be operated especially at low use and operating voltage. The compounds of formula (I) of the present invention are particularly suitable for use as matrix and/or hole/exciter blocker materials for blue and green emitters, for example blue or dark blue emitters (these are particularly phosphor emitters). Do. In addition, the compounds of formula (I) can be used as conductors/supplementary materials in organic electronics applications selected from switching elements and organic solar cells.
화학식 (I), 특히 화학식 (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) 및 (In)의 화합물은 유기 전자장치 응용, 특히 OLED에서 매트릭스 물질 및/또는 정공/여기자 차단제 물질 및/또는 전자/여기자 차단제 물질 및/또는 정공 주입 물질 및/또는 전자 주입 물질 및/또는 정공 전도체 물질 (정공 수송 물질) 및/또는 전자 전도체 물질 (전자 수송 물질)로서, 바람직하게는 매트릭스 물질 및/또는 전자/여기자 차단제 및/또는 정공 수송 물질로서 사용될 수 있다. 본 발명의 화학식 (I)의 화합물은 보다 바람직하게는 유기 전자장치 응용, 특히 OLED에서 매트릭스 물질로서 사용된다.Compounds of formula (I), especially formulas (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) and (In) are organic Matrix materials and/or hole/exciter blocker materials and/or electron/exciter blocker materials and/or hole inject materials and/or electron inject materials and/or hole conductor materials (hole transport materials) and/or in electronics applications, especially in OLEDs, and/or Or as an electron conductor material (electron transport material), preferably as a matrix material and/or electron/exciton blocker and/or hole transport material. The compounds of formula (I) of the present invention are more preferably used as matrix materials in organic electronics applications, especially OLEDs.
OLED의 방출 층 또는 방출 층들 중 하나에서, 방출체 물질을 화학식 (I)의 화합물의 매트릭스 물질, 및 예를 들어 우수한 정공 전도체 (정공 수송) 특성을 갖는 추가의 매트릭스 물질과 조합하는 것이 또한 가능하다. 이로써 이러한 방출 층의 높은 양자 효율이 달성된다.In either the emissive layer or the emissive layers of the OLED, it is also possible to combine the emitter material with the matrix material of the compound of formula (I), and further matrix material with good hole conductor (hole transport) properties, for example. . High quantum efficiency of this emitting layer is thereby achieved.
화학식 (I)의 특정 화합물, 예컨대 예를 들어 G-1은 6 eV 초과의 이온화 전위를 가지며, 이에 따라 전자 수송 물질로서 적합하다.Certain compounds of formula (I), for example G-1, have an ionization potential of greater than 6 eV and are therefore suitable as electron transport materials.
화학식 (I)의 화합물이 방출 층에서 매트릭스 물질로서 및 추가로 정공/여기자 차단제 물질 및/또는 전자/여기자 차단제 물질로서 사용되는 경우에, 물질의 화학적 동일성 또는 유사성으로 인해, 방출 층과 인접 정공/여기자 차단제 물질 및/또는 전자/여기자 차단제 물질 사이의 개선된 계면이 획득되고, 이는 동등한 휘도를 갖는 전압의 감소 및 OLED의 수명의 연장으로 이어질 수 있다. 더욱이, 정공/여기자 차단제 물질 및/또는 전자/여기자 차단제 물질을 위한, 및 방출 층의 매트릭스를 위한 동일 물질의 사용으로 OLED의 제조 공정의 단순화가 가능해지며, 이는 동일 공급원이 화학식 (I)의 화합물 중 하나의 물질의 증착 공정에 사용될 수 있기 때문이다.When the compound of formula (I) is used as a matrix material in the emitting layer and additionally as a hole/exciter blocker material and/or an electron/exciter blocker material, due to the chemical identity or similarity of the material, adjacent holes/ An improved interface between the exciton blocker material and/or the electron/exciter blocker material is obtained, which can lead to a reduction in voltage with equivalent brightness and an extension of the lifetime of the OLED. Moreover, the use of the same material for the hole/exciter blocker material and/or for the electron/exciter blocker material, and for the matrix of the emission layer allows simplification of the manufacturing process of the OLED, which has the same source of compound of formula (I) This is because one of the materials can be used in the deposition process.
유기 전자 장치의 적합한 구조는 통상의 기술자에게 공지되어 있으며, 하기 명시된다.Suitable structures for organic electronic devices are known to the skilled person and are specified below.
유기 트랜지스터는 일반적으로 정공 수송 능력 및/또는 전자 수송 능력을 갖는 유기 층으로부터 형성된 반도체 층; 전도성 층으로부터 형성된 게이트 전극; 및 반도체 층과 전도성 층 사이에 도입된 절연 층을 포함한다. 소스 전극 및 드레인 전극을 이러한 배열로 장착하여 트랜지스터 소자를 제조한다. 또한, 통상의 기술자에게 공지된 추가의 층이 유기 트랜지스터에 존재할 수 있다.The organic transistor generally includes a semiconductor layer formed from an organic layer having hole transport capability and/or electron transport capability; A gate electrode formed from a conductive layer; And an insulating layer introduced between the semiconductor layer and the conductive layer. A transistor element is manufactured by mounting the source electrode and the drain electrode in this arrangement. In addition, additional layers known to those skilled in the art may be present in the organic transistor.
유기 태양 전지 (광전 변환 소자)는 일반적으로, 평행으로 배열된 2개의 플레이트-형 전극 사이에 존재하는 유기 층을 포함한다. 유기 층은 빗살-형 전극 상에 구성될 수 있다. 유기 층의 부위와 관련된 특정한 제한은 없으며, 전극의 물질과 관련된 특정한 제한도 없다. 그러나, 평행으로 배열된 플레이트-형 전극이 사용되는 경우에, 적어도 1개의 전극이 바람직하게는 투명 전극, 예를 들어 ITO 전극 또는 플루오린-도핑된 산화주석 전극으로부터 형성된다. 유기 층은 2개의 하위층, 즉 p-형 반도체 특성 또는 정공 수송 능력을 갖는 층, 및 n-형 반도체 특성 또는 전자 수송 능력을 갖도록 형성된 층으로부터 형성된다. 또한, 통상의 기술자에게 공지된 추가의 층이 유기 태양 전지에 존재하는 것이 가능하다. 정공 수송 능력을 갖는 층은 화학식 (I)의 화합물을 포함할 수 있다.An organic solar cell (photoelectric conversion element) generally includes an organic layer present between two plate-shaped electrodes arranged in parallel. The organic layer can be constructed on a comb-shaped electrode. There are no specific restrictions with respect to the area of the organic layer, and there are no specific restrictions with respect to the material of the electrode. However, when plate-shaped electrodes arranged in parallel are used, at least one electrode is preferably formed from a transparent electrode, for example, an ITO electrode or a fluorine-doped tin oxide electrode. The organic layer is formed from two sub-layers, a layer with p-type semiconductor properties or hole transport capability, and a layer formed with n-type semiconductor properties or electron transport capability. It is also possible that additional layers known to those skilled in the art are present in the organic solar cell. The layer having hole transport ability may include a compound of formula (I).
화학식 (I)의 화합물은 발광 층 (바람직하게는 매트릭스 물질로서)에 뿐만 아니라 전자 차단 층 (전자/여기자 차단제로서)에도 존재하는 것이 마찬가지로 가능하다.It is likewise possible for the compound of formula (I) to be present in the light-emitting layer (preferably as a matrix material) as well as in the electron blocking layer (as an electron/exciton blocker).
본 발명은 추가로, 애노드 An 및 캐소드 Ka, 및 애노드 An과 캐소드 Ka 사이에 배열된 발광 층 E, 및 적절한 경우 정공/여기자에 대한 적어도 1개의 차단 층, 전자/여기자에 대한 적어도 1개의 차단 층, 적어도 1개의 정공 주입 층, 적어도 1개의 정공 전도체 층, 적어도 1개의 전자 주입 층 및 적어도 1개의 전자 전도체 층으로 이루어진 군으로부터 선택된 적어도 1개의 추가의 층을 포함하는 유기 발광 다이오드를 제공하고, 여기서 적어도 하나의 화학식 (I)의 화합물은 발광 층 E 및/또는 적어도 1개의 추가의 층에 존재한다. 적어도 하나의 화학식 (I)의 화합물은 바람직하게는 발광 층 및/또는 정공 차단 층에 존재한다.The invention furthermore comprises anode An and cathode Ka, and a light emitting layer E arranged between anode An and cathode Ka, and where appropriate at least one blocking layer for holes/excitation, at least one blocking layer for electrons/excitation , Providing an organic light emitting diode comprising at least one additional layer selected from the group consisting of at least one hole injection layer, at least one hole conductor layer, at least one electron injection layer and at least one electron conductor layer, wherein At least one compound of formula (I) is present in the light emitting layer E and/or at least one further layer. The at least one compound of formula (I) is preferably present in the light emitting layer and/or hole blocking layer.
추가로, 본원은 적어도 하나의 화학식 (I)의 화합물, 특히 화학식 (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) 또는 (In)의 화합물, 매우 특히 화합물 A-1 내지 A-65, B-1 내지 B-8, C-1 내지 C-65, D-1 내지 D-8, E-1 내지 E-65, 또는 F-1 내지 F-65를 포함하는 발광 층에 관한 것이다.Additionally, the present application provides at least one compound of formula (I), in particular formulas (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), ( Il) or a compound of (In), very particularly compounds A-1 to A-65, B-1 to B-8, C-1 to C-65, D-1 to D-8, E-1 to E- 65, or F-1 to F-65.
본 발명의 OLED의 구조Structure of OLED of the present invention
따라서 본 발명의 유기 발광 다이오드 (OLED)는 일반적으로 하기 구조를 갖는다:Therefore, the organic light emitting diode (OLED) of the present invention generally has the following structure:
애노드 (An) 및 캐소드 (Ka), 및 애노드 (An)와 캐소드 (Ka) 사이에 배열된 발광 층 E.Anode (An) and cathode (Ka), and a light emitting layer E arranged between anode (An) and cathode (Ka).
본 발명의 OLED는, 예를 들어 - 바람직한 실시양태에서 - 하기 층으로부터 형성될 수 있다:The OLED of the present invention can be formed from the following layers, for example-in a preferred embodiment:
1. 애노드1.Anode
2. 정공 전도체 층2. Hole conductor layer
3. 발광 층3. emitting layer
4. 정공/여기자 차단 층4. Hole/exciter blocking layer
5. 전자 전도체 층5. Electronic conductor layer
6. 캐소드6. Cathode
상기 언급된 구조와 상이한 층 순서가 또한 가능하고, 이는 통상의 기술자에게 공지되어 있다. 예를 들어, OLED가 언급된 층 전부를 갖는 것은 아닐 수 있고; 예를 들어 층 (1) (애노드), (3) (발광 층) 및 (6) (캐소드)을 갖는 OLED가 마찬가지로 적합하고, 이러한 경우에 층 (2) (정공 전도체 층) 및 (4) (정공/여기자 차단 층) 및 (5) (전자 전도체 층)의 기능이 인접 층에 의해 수행되는 것이 가능하다. 층 (1), (2), (3) 및 (6), 또는 층 (1), (3), (4), (5) 및 (6)을 갖는 OLED가 마찬가지로 적합하다. 또한, OLED는 정공 전도체 층 (2)과 발광 층 (3) 사이에 전자/여기자 차단 층을 가질 수 있다.Layer sequences different from the above-mentioned structures are also possible, which are known to the skilled person. For example, OLEDs may not have all of the layers mentioned; OLEDs with for example layers (1) (anode), (3) (light emitting layer) and (6) (cathode) are likewise suitable, in which case layers 2 (hole conductor layer) and (4) ( It is possible that the functions of the hole/excitation blocking layer) and (5) (electronic conductor layer) are performed by adjacent layers. OLEDs having layers (1), (2), (3) and (6), or layers (1), (3), (4), (5) and (6) are likewise suitable. Further, the OLED may have an electron/excitation blocking layer between the hole conductor layer 2 and the light emitting layer 3.
추가로, 복수의 상기 언급된 기능 (전자/여기자 차단제, 정공/여기자 차단제, 정공 주입, 정공 전도, 전자 주입, 전자 전도)이 한 층에 조합되고, 이것이 예를 들어 이 층에 존재하는 단일 물질에 의해 수행되는 것이 가능하다. 예를 들어, 정공 전도체 층에 사용된 물질은, 한 실시양태에서, 동시에 여기자 및/또는 전자를 차단할 수 있다.Additionally, a plurality of the above-mentioned functions (electron/exciter blocker, hole/exciter blocker, hole injection, hole conduction, electron injection, electron conduction) are combined in one layer, which is for example a single substance present in this layer It is possible to be done by. For example, the material used in the hole conductor layer can, in one embodiment, block excitons and/or electrons simultaneously.
또한, 상기 명시된 것 중에서 OLED의 개별 층은 2개 이상의 층으로부터 다시 형성될 수 있다. 예를 들어, 정공 전도체 층은 전극으로부터 정공이 주입되는 층, 및 정공-주입 층에서 발광 층 내로 정공을 수송하는 층으로부터 형성될 수 있다. 전자 전도 층은 마찬가지로 복수의 층, 예를 들어 전극에 의해 전자가 주입되는 층, 및 전자 주입 층으로부터 전자를 수용하여 이를 발광 층 내로 수송하는 층으로 이루어질 수 있다. 언급된 이들 층은 각각 에너지 수준, 열 저항 및 전하 캐리어 이동도, 및 또한 유기 층 또는 금속 전극으로 특정된 층의 에너지 차이와 같은 인자에 따라 선택된다. 통상의 기술자는 본 발명에 따라 방출체 물질로서 사용되는 유기 화합물에 최적으로 부합되도록 OLED의 구조를 선택할 수 있다.Also, individual layers of OLEDs among those specified above may be formed again from two or more layers. For example, the hole conductor layer can be formed from a layer from which holes are injected from the electrode, and a layer that transports holes from the hole-injection layer into the light emitting layer. The electron conducting layer can likewise consist of a plurality of layers, for example a layer in which electrons are injected by an electrode, and a layer that receives electrons from the electron injection layer and transports them into the light emitting layer. These layers mentioned are selected according to factors such as energy level, thermal resistance and charge carrier mobility, and also the energy difference of the layer specified by the organic layer or metal electrode. The person skilled in the art can select the structure of the OLED in order to optimally conform to the organic compounds used as emitter materials according to the invention.
특히 효율적인 OLED를 획득하기 위해, 예를 들어, 정공 전도체 층의 HOMO (최고 점유 분자 궤도)는 애노드의 작업 기능에 부합되어야 하고, 전자 전도체 층의 LUMO (최저 비점유 분자 궤도)는 캐소드의 작업 기능에 부합되어야 하며, 단 상기 언급된 층은 본 발명의 OLED에 존재한다.In order to obtain a particularly efficient OLED, for example, the HOMO (highest occupied molecular orbital) of the hole conductor layer must conform to the working function of the anode, and the LUMO (lowest non-occupied molecular orbital) of the electron conductor layer is the working function of the cathode. The layer mentioned above is present in the OLED of the present invention.
애노드 (1)는 양전하 캐리어를 제공하는 전극이다. 이는, 예를 들어 금속, 다양한 금속의 혼합물, 금속 합금, 금속 산화물 또는 다양한 금속 산화물의 혼합물을 포함하는 물질로부터 형성될 수 있다. 대안적으로, 애노드는 전도성 중합체일 수 있다. 적합한 금속은 주족 금속, 전이 금속 및 란타노이드, 특히 원소 주기율표의 Ib, IVa, Va 및 VIa족의 금속, 및 VIIIa족의 전이 금속의 금속 및 합금을 포함한다. 애노드가 투명해야 하는 경우에, 일반적으로 원소 주기율표 (IUPAC 버전)의 IIb, IIIb 및 IVb족의 혼합된 금속 산화물, 예를 들어 산화인듐주석 (ITO)이 사용된다. 마찬가지로 애노드 (1)가, 예를 들어 문헌 [Nature, Vol. 357, pages 477 to 479 (June 11, 1992)]에 기재된 바와 같은 유기 물질, 예를 들어 폴리아닐린을 포함하는 것이 가능하다. 형성된 광을 방출하는 것이 가능하도록 애노드 또는 캐소드 중 적어도 어느 하나는 적어도 부분적으로 투명해야 한다. 애노드 (1)에 사용되는 물질은 바람직하게는 ITO이다.The anode 1 is an electrode that provides a positive charge carrier. It can be formed from materials comprising, for example, metals, mixtures of various metals, metal alloys, metal oxides or mixtures of various metal oxides. Alternatively, the anode can be a conductive polymer. Suitable metals include main group metals, transition metals and lanthanoids, especially metals of groups Ib, IVa, Va and VIa of the periodic table of elements, and metals and alloys of transition metals of group VIIIa. In cases where the anode should be transparent, mixed metal oxides of groups IIb, IIIb and IVb of the Periodic Table of the Elements (IUPAC version) are generally used, such as indium tin oxide (ITO). Similarly, the anode (1) is described, for example, in Nature, Vol. 357, pages 477 to 479 (June 11, 1992). It is possible to include organic materials, such as polyaniline. At least one of the anode or cathode must be at least partially transparent so that it is possible to emit the formed light. The material used for the anode 1 is preferably ITO.
본 발명의 OLED의 층 (2)에 적합한 정공 전도체 물질은, 예를 들어 문헌 [Kirk-Othmer Encyclopedia of Chemical Technology, 4th edition, Vol. 18, pages 837 to 860, 1996]에 개시되어 있다. 정공-수송 분자 및 중합체 둘 다가 정공 수송 물질로서 사용될 수 있다. 전형적으로 사용되는 정공 수송 분자는 트리스[N-(1-나프틸)-N-(페닐아미노)]트리페닐아민 (1-NaphDATA), 4,4'-비스[N-(1-나프틸)-N-페닐아미노]비페닐 (α-NPD), N,N'-디페닐-N,N'-비스(3-메틸페닐)-[1,1'-비페닐]-4,4'-디아민 (TPD), 1,1-비스[(디-4-톨릴아미노)페닐]시클로헥산 (TAPC), N,N'-비스(4-메틸페닐)-N,N'-비스(4-에틸페닐)-[1,1'-(3,3'-디메틸)비페닐]-4,4'-디아민 (ETPD), 테트라키스(3-메틸페닐)-N,N,N',N'-2,5-페닐렌디아민 (PDA), α-페닐-4-N,N-디페닐아미노스티렌 (TPS), p-(디에틸아미노)벤즈알데히드 디페닐히드라존 (DEH), 트리페닐아민 (TPA), 비스[4-(N,N-디에틸아미노)-2-메틸페닐)(4-메틸페닐)메탄 (MPMP), 1-페닐-3-[p-(디에틸아미노)스티릴]-5-[p-(디에틸아미노)페닐]피라졸린 (PPR 또는 DEASP), 1,2-트랜스-비스(9H-카르바졸-9-일)시클로부탄 (DCZB), N,N,N',N'-테트라키스(4-메틸페닐)-(1,1'-비페닐)-4,4'-디아민 (TTB), 4,4',4"-트리스(N,N-디페닐아미노)트리페닐아민 (TDTA), 4,4',4"-트리스(N-카르바졸릴)트리페닐아민 (TCTA), N,N'-비스(나프탈렌-2-일)-N,N'-비스(페닐)벤지딘 (β-NPB), N,N'-비스(3-메틸페닐)-N,N'-비스(페닐)-9,9-스피로비플루오렌 (스피로-TPD), N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-9,9-스피로비플루오렌 (스피로-NPB), N,N'-비스(3-메틸페닐)-N,N'-비스(페닐)-9,9-디메틸플루오렌 (DMFL-TPD), 디[4-(N,N-디톨릴아미노)페닐]시클로헥산, N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-9,9-디메틸플루오렌, N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-2,2-디메틸벤지딘, N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)벤지딘, N,N'-비스(3-메틸페닐)-N,N'-비스(페닐)벤지딘, 2,3,5,6-테트라플루오로-7,7,8,8-테트라시아노퀴노디메탄 (F4-TCNQ), 4,4',4"-트리스(N-3-메틸페닐-N-페닐아미노)트리페닐아민, 4,4',4"-트리스(N-(2-나프틸)-N-페닐-아미노)트리페닐아민, 피라지노[2,3-f][1,10]페난트롤린-2,3-디카르보니트릴 (PPDN), N,N,N',N'-테트라키스(4-메톡시페닐)벤지딘 (MeO-TPD), 2,7-비스[N,N-비스(4-메톡시페닐)아미노]-9,9-스피로비플루오렌 (MeO-스피로-TPD), 2,2'-비스[N,N-비스(4-메톡시페닐)아미노]-9,9-스피로비플루오렌 (2,2'-MeO-스피로-TPD), N,N'-디페닐-N,N'-디[4-(N,N-디톨릴아미노)페닐]벤지딘 (NTNPB), N,N'-디페닐-N,N'-디[4-(N,N-디페닐아미노)페닐]벤지딘 (NPNPB), N,N'-디(나프탈렌-2-일)-N,N'-디페닐벤젠-1,4-디아민 (β-NPP), N,N'-비스(3-메틸페닐)-N,N'-비스(페닐)-9,9-디페닐플루오렌 (DPFL-TPD), N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-9,9-디페닐플루오렌 (DPFL-NPB), 2,2',7,7'-테트라키스(N,N-디페닐아미노)-9,9'-스피로비플루오렌 (스피로-TAD), 9,9-비스[4-(N,N-비스(비페닐-4-일)아미노)페닐]-9H-플루오렌 (BPAPF), 9,9-비스[4-(N,N-비스(나프탈렌-2-일)아미노)페닐]-9H-플루오렌 (NPAPF), 9,9-비스[4-(N,N-비스(나프탈렌-2-일)-N,N'-비스페닐아미노)페닐]-9H-플루오렌 (NPBAPF), 2,2',7,7'-테트라키스[N-나프탈레닐(페닐)아미노]-9,9'-스피로비플루오렌 (스피로-2NPB), N,N'-비스(페난트렌-9-일)-N,N'-비스(페닐)벤지딘 (PAPB), 2,7-비스[N,N-비스(9,9-스피로비플루오렌-2-일)아미노]-9,9-스피로비플루오렌 (스피로-5), 2,2'-비스[N,N-비스(비페닐-4-일)아미노]-9,9-스피로비플루오렌 (2,2'-스피로-DBP), 2,2'-비스(N,N-디페닐아미노)-9,9-스피로비플루오렌 (스피로-BPA), 2,2',7,7'-테트라(N,N-디톨릴)아미노스피로비플루오렌 (스피로-TTB), N,N,N',N'-테트라나프탈렌-2-일벤지딘 (TNB), 포르피린 화합물 및 프탈로시아닌, 예컨대 구리 프탈로시아닌 및 산화티타늄 프탈로시아닌으로 이루어진 군으로부터 선택된다. 전형적으로 사용되는 정공-수송 물질은 폴리비닐카르바졸, (페닐메틸)폴리실란 및 폴리아닐린으로 이루어진 군으로부터 선택된다. 정공-수송 분자를 폴리스티렌 및 폴리카르보네이트와 같은 중합체 내에 도핑함으로써 정공-수송 중합체를 수득하는 것이 마찬가지로 가능하다. 적합한 정공-수송 분자는 상기 이미 언급된 분자이다.Hole conductor materials suitable for the layer (2) of the OLED of the present invention are described, for example, in Kirk-Othmer Encyclopedia of Chemical Technology, 4th edition, Vol. 18, pages 837 to 860, 1996. Both hole-transporting molecules and polymers can be used as the hole-transporting material. The hole transport molecule typically used is tris[N-(1-naphthyl)-N-(phenylamino)]triphenylamine (1-NaphDATA), 4,4'-bis[N-(1-naphthyl) -N-phenylamino]biphenyl (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine (TPD), 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC), N,N'-bis(4-methylphenyl)-N,N'-bis(4-ethylphenyl) -[1,1'-(3,3'-dimethyl)biphenyl]-4,4'-diamine (ETPD), tetrakis(3-methylphenyl)-N,N,N',N'-2,5 -Phenylenediamine (PDA), α-phenyl-4-N,N-diphenylaminostyrene (TPS), p-(diethylamino)benzaldehyde diphenylhydrazone (DEH), triphenylamine (TPA), bis [4-(N,N-diethylamino)-2-methylphenyl)(4-methylphenyl)methane (MPMP), 1-phenyl-3-[p-(diethylamino)styryl]-5-[p- (Diethylamino)phenyl]pyrazoline (PPR or DEASP), 1,2-trans-bis(9H-carbazole-9-yl)cyclobutane (DCZB), N,N,N',N'-tetrakis (4-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TTB), 4,4',4"-tris(N,N-diphenylamino)triphenylamine (TDTA) , 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA), N,N'-bis(naphthalen-2-yl)-N,N'-bis(phenyl)benzidine (β -NPB), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-spirobifluorene (spiro-TPD), N,N'-bis(naphthalene-1 -Yl)-N,N'-bis(phenyl)-9,9-spirobifluorene (spiro-NPB), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)- 9,9-dimethylfluorene (DMFL-TPD), di[4-(N,N-ditolylamino)phenyl]cyclohexane, N,N'-bis(naphthalen-1-yl)-N,N'- Bis(phenyl)-9,9-dimethylfluorene, N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-2,2-dimethylbenzidine, N,N'-bis (Naphthalen-1-yl)-N,N'-bis(phenyl)benzidine, N,N'-bis(3-methyl Phenyl)-N,N'-bis(phenyl)benzidine, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), 4,4' ,4"-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine, Pyrazino[2,3-f][1,10]phenanthroline-2,3-dicarbonitrile (PPDN), N,N,N',N'-tetrakis(4-methoxyphenyl)benzidine ( MeO-TPD), 2,7-bis[N,N-bis(4-methoxyphenyl)amino]-9,9-spirobifluorene (MeO-spiro-TPD), 2,2'-bis[N ,N-bis(4-methoxyphenyl)amino]-9,9-spirobifluorene (2,2'-MeO-spiro-TPD), N,N'-diphenyl-N,N'-di[ 4-(N,N-ditolylamino)phenyl]benzidine (NTNPB), N,N'-diphenyl-N,N'-di[4-(N,N-diphenylamino)phenyl]benzidine (NPNPB) , N,N'-di(naphthalen-2-yl)-N,N'-diphenylbenzene-1,4-diamine (β-NPP), N,N'-bis(3-methylphenyl)-N,N '-Bis(phenyl)-9,9-diphenylfluorene (DPFL-TPD), N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-di Phenylfluorene (DPFL-NPB), 2,2',7,7'-tetrakis(N,N-diphenylamino)-9,9'-spirobifluorene (spiro-TAD), 9,9- Bis[4-(N,N-bis(biphenyl-4-yl)amino)phenyl]-9H-fluorene (BPAPF), 9,9-bis[4-(N,N-bis(naphthalene-2- 1)amino)phenyl]-9H-fluorene (NPAPF), 9,9-bis[4-(N,N-bis(naphthalen-2-yl)-N,N'-bisphenylamino)phenyl]-9H -Fluorene (NPBAPF), 2,2',7,7'-tetrakis[N-naphthalenyl(phenyl)amino]-9,9'-spirobifluorene (spiro-2NPB), N,N' -Bis(phenanthrene-9-yl)-N,N'-bis(phenyl)benzidine (PAPB), 2,7-bis[N,N-bis(9,9-spirobifluoren-2-yl) Amino]-9,9-spirobifluorene (spiro-5), 2,2'-bis[N,N-bis(biphenyl-4-yl)amino]-9,9-spirobifluorene (2 ,2'-spiro-DBP), 2,2'-bis(N,N-diphenylamino)-9,9-spirobifluorene (spiro-BPA), 2,2',7,7'-tetra (N,N-Ditolyl)aminospirobifluorene (spiro-TTB), N,N,N',N'-tetranaphthalene-2-ylbenzidine (TNB), porphyrin compounds and phthalocyanines, such as copper phthalocyanine and oxidation Titanium phthalocyanine. The hole-transport material typically used is selected from the group consisting of polyvinylcarbazole, (phenylmethyl)polysilane and polyaniline. It is likewise possible to obtain hole-transporting polymers by doping hole-transporting molecules into polymers such as polystyrene and polycarbonate. Suitable hole-transporting molecules are those already mentioned above.
또한 - 한 실시양태에서 - 카르벤 착물을 정공 전도체 물질로서 사용하는 것이 가능하고, 적어도 하나의 정공 전도체 물질의 밴드 갭은 일반적으로, 사용되는 방출체 물질의 밴드 갭보다 크다. 본원의 문맥에서, "밴드 갭"은 삼중항 에너지를 의미하는 것으로 이해된다. 적합한 카르벤 착물은, 예를 들어 WO 2005/019373 A2, WO 2006/056418 A2, WO 2005/113704, WO 2007/115970, WO 2007/115981 및 WO 2008/000727에 기재된 바와 같은 카르벤 착물이다. 적합한 카르벤 착물의 한 예는 화학식 을 갖는 Ir(dpbic)3이고, 이는 예를 들어 WO2005/019373에 개시되어 있다. 원칙적으로, 정공 전도체 층이 정공 전도체 물질로서 적어도 하나의 화학식 (I)의 화합물, 특히 화학식 (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) 또는 (In)의 화합물, 매우 특히 화합물 A-1 내지 A-65, B-1 내지 B-8, C-1 내지 C-65, D-1 내지 D-8, E-1 내지 E-65, 또는 F-1 내지 F-65를 포함하는 것이 가능하다.It is also possible-in one embodiment-to use the carbene complex as a hole conductor material, and the band gap of the at least one hole conductor material is generally larger than the band gap of the emitter material used. In the context of the present application, “band gap” is understood to mean triplet energy. Suitable carbene complexes are, for example, carbene complexes as described in WO 2005/019373 A2, WO 2006/056418 A2, WO 2005/113704, WO 2007/115970, WO 2007/115981 and WO 2008/000727. One example of a suitable carbene complex is the formula Ir(dpbic) 3 , which is disclosed, for example, in WO2005/019373. In principle, the hole conductor layer is a hole conductor material, at least one compound of formula (I), in particular formulas (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii) , Compounds of (Ij), (Il) or (In), very particularly compounds A-1 to A-65, B-1 to B-8, C-1 to C-65, D-1 to D-8, It is possible to include E-1 to E-65, or F-1 to F-65.
일차적으로 층 두께를 보다 넉넉하게 하고 (핀홀/단락 방지), 이차적으로 장치의 작동 전압을 최소화하기 위해 정공-수송 층을 또한 전자적으로 도핑하여, 사용되는 물질의 수송 특성을 개선할 수 있다. 전자 도핑은 통상의 기술자에게 공지되어 있으며, 예를 들어 문헌 [W. Gao, A. Kahn, J. Appl. Phys., Vol. 94, 2003, 359 (p-도핑된 유기 층); A. G. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett., Vol. 82, number 25, 2003, 4495 및 Pfeiffer et al., Organic Electronics 2003, 4, 89 - 103, 및 K. Walzer, B. Maennig, M. Pfeiffer, K. Leo, Chem. Soc. Rev. 2007, 107, 1233]에 개시되어 있다. 예를 들어, 정공-수송 층에 혼합물, 특히 정공-수송 층의 전기적 p-도핑을 유발하는 혼합물을 사용하는 것이 가능하다. p-도핑은 산화 물질의 첨가에 의해 달성된다. 이들 혼합물은, 예를 들어 하기 혼합물: 상기 언급된 정공 수송 물질과 적어도 하나의 금속 산화물, 예를 들어 MoO2, MoO3, WOx, ReO3 및/또는 V2O5, 바람직하게는 MoO3 및/또는 ReO3, 보다 바람직하게는 MoO3의 혼합물, 또는 상기 언급된 정공 수송 물질과, 7,7,8,8-테트라시아노퀴노디메탄 (TCNQ), 2,3,5,6-테트라플루오로-7,7,8,8-테트라시아노퀴노디메탄 (F4-TCNQ), 2,5-비스(2-히드록시에톡시)-7,7,8,8-테트라시아노퀴노디메탄, 비스(테트라-n-부틸암모늄)테트라시아노디페노퀴노디메탄, 2,5-디메틸-7,7,8,8-테트라시아노퀴노디메탄, 테트라시아노에틸렌, 11,11,12,12-테트라시아노나프토2,6-퀴노디메탄, 2-플루오로-7,7,8,8-테트라시아노퀴노-디메탄, 2,5-디플루오로-7,7,8,8에트라시아노퀴노디메탄, 디시아노메틸렌-1,3,4,5,7,8-헥사플루오로-6H나프탈렌-2-일린데)말로노니트릴 (F6-TNAP), Mo(tfd)3 (문헌 [Kahn et al., J. Am. Chem. Soc. 2009, 131 (35), 12530-12531]로부터의 것), EP1988587, US2008265216, EP2180029, US20100102709, WO2010132236, EP2180029에 기재된 바와 같은 화합물 및 EP2401254에 언급된 바와 같은 퀴논 화합물로부터 선택된 하나 이상의 화합물을 포함하는 혼합물일 수 있다. 바람직한 혼합물은 상기 언급된 카르벤 착물, 예컨대 예를 들어 카르벤 착물 HTM-1, 및 MoO3 및/또는 ReO3, 특히 MoO3을 포함한다. 특히 바람직한 실시양태에서, 정공 수송 층은 0.1 내지 10 중량%의 MoO3 및 90 내지 99.9 중량%의 카르벤 착물, 특히 카르벤 착물 HTM-1을 포함하고, 여기서 MoO3 및 카르벤 착물의 총량은 100 중량%이다.The hole-transport layer can also be electronically doped primarily to make the layer thickness more generous (pinhole/short circuit protection), and to minimize the operating voltage of the device, thereby improving the transport properties of the materials used. Electronic doping is known to those skilled in the art, see, eg, W. Gao, A. Kahn, J. Appl. Phys., Vol. 94, 2003, 359 (p-doped organic layer); AG Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett., Vol. 82, number 25, 2003, 4495 and Pfeiffer et al., Organic Electronics 2003, 4, 89-103, and K. Walzer, B. Maennig, M. Pfeiffer, K. Leo, Chem. Soc. Rev. 2007, 107, 1233. For example, it is possible to use mixtures in the hole-transport layer, in particular mixtures that cause electrical p-doping of the hole-transport layer. P-doping is achieved by the addition of oxidizing materials. These mixtures are, for example, the following mixtures: the above-mentioned hole transport material and at least one metal oxide, for example MoO 2 , MoO 3 , WO x , ReO 3 and/or V 2 O 5 , preferably MoO 3 And/or a mixture of ReO 3 , more preferably MoO 3 , or the hole transport material mentioned above, 7,7,8,8-tetracyanoquinodimethane (TCNQ), 2,3,5,6- Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 -TCNQ), 2,5-bis(2-hydroxyethoxy)-7,7,8,8-tetracyano Quinodimethane, bis(tetra-n-butylammonium)tetracyanodiphenoquinodimethane, 2,5-dimethyl-7,7,8,8-tetracyanoquinodimethane, tetracyanoethylene, 11,11 ,12,12-tetracyanonaphtho2,6-quinodimethane, 2-fluoro-7,7,8,8-tetracyanoquino-dimethane, 2,5-difluoro-7,7, 8,8 Etracyanoquinodimethane, dicyanomethylene-1,3,4,5,7,8-hexafluoro-6Hnaphthalene- 2- ylide)malononitrile (F 6 -TNAP), Mo( tfd) 3 (from Kahn et al., J. Am. Chem. Soc. 2009, 131 (35), 12530-12531), EP1988587, US2008265216, EP2180029, US20100102709, WO2010132236, EP2180029 It may be a mixture comprising a compound and one or more compounds selected from quinone compounds as mentioned in EP2401254. Preferred mixtures include the above-mentioned carbene complexes, for example the carbene complex HTM-1, and MoO 3 and/or ReO 3 , in particular MoO 3 . In a particularly preferred embodiment, the hole transport layer comprises 0.1 to 10% by weight of MoO 3 and 90 to 99.9% by weight of the carbene complex, in particular the carbene complex HTM-1, wherein the total amount of MoO 3 and carbene complex is 100% by weight.
발광 층 (3)은 적어도 하나의 방출체 물질을 포함한다. 원칙적으로, 이는 형광 또는 인광 방출체일 수 있고, 적합한 방출체 물질은 통상의 기술자에게 공지되어 있다. 적어도 하나의 방출체 물질은 바람직하게는 인광 방출체이다. 바람직하게 사용되는 인광 방출체 화합물은 금속 착물, 특히 금속 Ru, Rh, Ir, Pd 및 Pt의 착물, 특히 Ir의 착물을 기재로 하며, 이들은 중요성이 증가되었다. 화학식 (I)의 화합물은 발광 층에서 매트릭스로서 사용될 수 있다.The luminescent layer 3 comprises at least one emitter material. In principle, it can be a fluorescent or phosphorescent emitter, and suitable emitter materials are known to the skilled person. The at least one emitter material is preferably a phosphorescent emitter. The phosphorescent emitter compounds preferably used are based on metal complexes, in particular complexes of metals Ru, Rh, Ir, Pd and Pt, especially complexes of Ir, which have increased in importance. The compound of formula (I) can be used as a matrix in the light emitting layer.
본 발명의 OLED에 사용하기에 적합한 금속 착물은, 예를 들어 문헌 WO02/60910A1, US2001/0015432A1, US2001/0019782A1, US2002/0055014A1, US2002/0024293A1, US2002/0048689A1, EP1191612A2, EP1191613A2, EP1211257A2, US2002/0094453A1, WO02/02714A2, WO00/70655A2, WO01/41512A1, WO02/15645A1, WO2005/019373A2, WO2005/113704A2, WO2006/115301A1, WO2006/067074A1, WO2006/056418, WO2006121811A1, WO2007095118A2, WO2007/115970, WO2007/115981, WO2008/000727, WO2010129323, WO2010056669, WO10086089, US2011/0057559, WO2011/106344, US2011/0233528, WO2012/048266 및 WO2012/172482에 기재되어 있다.Metal complexes suitable for use in the OLED of the present invention include, for example, documents WO02/60910A1, US2001/0015432A1, US2001/0019782A1, US2002/0055014A1, US2002/0024293A1, US2002/0048689A1, EP1191612A2, EP1191613A2, EP1211257A2, US2002/00944531 , WO02/02714A2, WO00/70655A2, WO01/41512A1, WO02/15645A1, WO2005/019373A2, WO2005/113704A2, WO2006/115301A1, WO2006/067074A1, WO2006/056418, WO2006121811A1, WO2007095118A2, WO2007/115970, WO2008/115981 /000727, WO2010129323, WO2010056669, WO10086089, US2011/0057559, WO2011/106344, US2011/0233528, WO2012/048266 and WO2012/172482.
추가의 적합한 금속 착물은 상업적으로 입수가능한 금속 착물 트리스(2-페닐피리딘)이리듐(III), 이리듐(III) 트리스(2-(4-톨릴)피리디네이토-N,C2'), 비스(2-페닐피리딘)(아세틸아세토네이토)이리듐(III), 이리듐(III) 트리스(1-페닐이소퀴놀린), 이리듐(III) 비스(2,2'-벤조티에닐)피리디네이토-N,C3')(아세틸아세토네이트), 트리스(2-페닐퀴놀린)이리듐(III), 이리듐(III) 비스(2-(4,6-디플루오로페닐)피리디네이토-N,C2)피콜리네이트, 이리듐(III) 비스(1-페닐이소퀴놀린)(아세틸아세토네이트), 비스(2-페닐퀴놀린)(아세틸아세토네이토)이리듐(III), 이리듐(III) 비스(디-벤조[f,h]퀴녹살린)(아세틸아세토네이트), 이리듐(III) 비스(2-메틸디-벤조[f,h]퀴녹살린)(아세틸아세토네이트) 및 트리스(3-메틸-1-페닐-4-트리메틸아세틸-5-피라졸리노)테르븀(III), 비스[1-(9,9-디메틸-9H-플루오렌-2-일)이소퀴놀린](아세틸아세토네이토)이리듐(III), 비스(2-페닐벤조티아졸레이토)(아세틸아세토네이토)이리듐(III), 비스(2-(9,9-디헥실플루오레닐)-1-피리딘)(아세틸아세토네이토)이리듐(III), 비스(2-벤조[b]티오펜-2-일-피리딘)(아세틸아세토네이토)이리듐(III)이다.Additional suitable metal complexes are commercially available metal complex tris(2-phenylpyridine)iridium(III), iridium(III) tris(2-(4-tolyl)pyridine-N,C 2' ), bis (2-phenylpyridine)(acetylacetonato) iridium(III), iridium(III) tris(1-phenylisoquinoline), iridium(III) bis(2,2'-benzothienyl)pyridine- N,C 3' )(acetylacetonate), tris(2-phenylquinoline) iridium(III), iridium(III) bis(2-(4,6-difluorophenyl)pyridine-N,C 2 ) Picolinate, iridium(III) bis(1-phenylisoquinoline)(acetylacetonate), bis(2-phenylquinoline)(acetylacetonato)iridium(III), iridium(III) bis(di- Benzo[f,h]quinoxaline) (acetylacetonate), iridium(III) bis(2-methyldi-benzo[f,h]quinoxaline) (acetylacetonate) and tris(3-methyl-1-phenyl) -4-trimethylacetyl-5-pyrazolino)terbium(III), bis[1-(9,9-dimethyl-9H-fluoren-2-yl)isoquinoline](acetylacetonato)iridium(III) , Bis(2-phenylbenzothiazolate)(acetylacetonato)iridium(III), bis(2-(9,9-dihexylfluorenyl)-1-pyridine)(acetylacetonato)iridium( III), bis(2-benzo[b]thiophen-2-yl-pyridine)(acetylacetonato)iridium(III).
또한, 하기의 상업적으로 입수가능한 물질이 적합하다: 트리스(디벤조일아세토네이토)모노(페난트롤린)유로퓸(III), 트리스(디벤조일메탄)-모노(페난트롤린)유로퓸(III), 트리스(디벤조일메탄)모노(5-아미노페난트롤린)유로퓸(III), 트리스(디-2-나프토일메탄)모노(페난트롤린)유로퓸(III), 트리스(4-브로모벤조일메탄)모노(페난트롤린)유로퓸(III), 트리스(디(비페닐)메탄)모노(페난트롤린)유로퓸(III), 트리스(디벤조일메탄)모노(4,7-디페닐페난트롤린)유로퓸(III), 트리스(디벤조일메탄)모노(4,7-디-메틸페난트롤린)유로퓸(III), 트리스(디벤조일메탄)모노(4,7-디메틸페난트롤린디술폰산)유로퓸(III) 이나트륨 염, 트리스[디(4-(2-(2-에톡시에톡시)에톡시)벤조일메탄)]모노(페난트롤린)유로퓸(III) 및 트리스[디[4-(2-(2-에톡시에톡시)에톡시)벤조일메탄)]모노(5-아미노페난트롤린)유로퓸(III), 오스뮴(II) 비스(3-(트리플루오로메틸)-5-(4-tert-부틸피리딜)-1,2,4-트리아졸레이토)디페닐메틸포스핀, 오스뮴(II) 비스(3-(트리플루오로메틸)-5-(2-피리딜)-1,2,4-트리아졸)디메틸페닐포스핀, 오스뮴(II) 비스(3-(트리플루오로메틸)-5-(4-tert-부틸피리딜)-1,2,4-트리아졸레이토)디메틸페닐포스핀, 오스뮴(II) 비스(3-(트리플루오로메틸)-5-(2-피리딜)피라졸레이토)디메틸페닐포스핀, 트리스[4,4'-디-tert-부틸(2,2')-비피리딘]루테늄(III), 오스뮴(II) 비스(2-(9,9-디부틸플루오레닐)-1-이소퀴놀린(아세틸아세토네이트).In addition, the following commercially available materials are suitable: tris(dibenzoylacetonato)mono(phenanthroline)uropium(III), tris(dibenzoylmethane)-mono(phenanthroline)uropium(III), Tris (dibenzoylmethane) mono (5-aminophenanthroline) europium (III), tris (di-2-naphthoylmethane) mono (phenanthroline) europium (III), tris (4-bromobenzoylmethane) Mono (phenanthroline) europium (III), tris (di (biphenyl) methane) mono (phenanthroline) europium (III), tris (dibenzoylmethane) mono (4,7-diphenylphenanthroline) europium (III), tris (dibenzoylmethane) mono (4,7-di-methylphenanthroline) europium (III), tris (dibenzoylmethane) mono (4,7-dimethylphenanthroline disulfonic acid) europium (III) Disodium salt, tris[di(4-(2-(2-ethoxyethoxy)ethoxy)benzoylmethane)]mono(phenanthroline)uropium(III) and tris[di[4-(2-(2 -Ethoxyethoxy)ethoxy)benzoylmethane)]mono(5-aminophenanthroline)uropium(III), osmium(II) bis(3-(trifluoromethyl)-5-(4-tert-butyl) Pyridyl)-1,2,4-triazolito)diphenylmethylphosphine, osmium(II) bis(3-(trifluoromethyl)-5-(2-pyridyl)-1,2,4- Triazole)dimethylphenylphosphine, osmium(II) bis(3-(trifluoromethyl)-5-(4-tert-butylpyridyl)-1,2,4-triazoleito)dimethylphenylphosphine, Osmium(II) bis(3-(trifluoromethyl)-5-(2-pyridyl)pyrazolato)dimethylphenylphosphine, tris[4,4'-di-tert-butyl(2,2') -Bipyridine]ruthenium(III), osmium(II) bis(2-(9,9-dibutylfluorenyl)-1-isoquinoline (acetylacetonate).
바람직한 인광 방출체는 카르벤 착물이다. 적합한 인광 청색 방출체는 하기 공개공보에 명시되어 있다: WO2006/056418A2, WO2005/113704, WO2007/115970, WO2007/115981, WO2008/000727, WO2009050281, WO2009050290, WO2011051404, US2011/057559, WO2011/073149, WO2012/121936A2, US2012/0305894A1, WO2012/170571, WO2012/170461, WO2012/170463, WO2006/121811, WO2007/095118, WO2008/156879, WO2008/156879, WO2010/068876, US2011/0057559, WO2011/106344, US2011/0233528, WO2012/048266 및 WO2012/172482.The preferred phosphorescent emitter is a carbene complex. Suitable phosphorescent blue emitters are specified in the following publications: WO2006/056418A2, WO2005/113704, WO2007/115970, WO2007/115981, WO2008/000727, WO2009050281, WO2009050290, WO2011051404, US2011/057559, WO2011/073149, WO2012/ 121936A2, US2012/0305894A1, WO2012/170571, WO2012/170461, WO2012/170463, WO2006/121811, WO2007/095118, WO2008/156879, WO2008/156879, WO2010/068876, US2011/0057559, WO2011/106344, US2011/0233528, WO2012/048266 and WO2012/172482.
발광 층은 바람직하게는 WO 2005/019373A2에 기재된 화학식 [L]m1[K]o1M[카르벤]n1 (IX)의 화합물을 포함하고, 여기서 기호는 하기 의미를 갖는다:The light emitting layer preferably comprises a compound of the formula [L] m1 [K] o1 M[carben] n1 (IX) described in WO 2005/019373A2, wherein the symbol has the following meaning:
M은 각각의 금속 원자에 대해 가능한 임의의 산화 상태의 Co, Rh, Ir, Nb, Pd, Pt, Fe, Ru, Os, Cr, Mo, W, Mn, Tc, Re, Cu, Ag 및 Au로 이루어진 군으로부터 선택된 금속 원자이고;M is Co, Rh, Ir, Nb, Pd, Pt, Fe, Ru, Os, Cr, Mo, W, M n , Tc, Re, Cu, Ag and Au in any oxidation state possible for each metal atom A metal atom selected from the group consisting of;
카르벤은 비하전 또는 일음이온성, 및 한자리, 두자리 또는 세자리일 수 있는 카르벤 리간드이고, 카르벤 리간드는 또한 비스카르벤 또는 트리스카르벤 리간드일 수 있고;Carbenes are uncharged or monoanionic, and carbene ligands that can be monodentate, bidentate or tridentate, and carbene ligands can also be biscarbene or triscarbene ligands;
L은 일음이온성 또는 이음이온성 리간드이고, 이는 한자리 또는 두자리일 수 있고;L is a monoanionic or anionic ligand, which may be monodentate or bidentate;
K는 포스핀; 포스포네이트 및 그의 유도체, 아르세네이트 및 그의 유도체; 포스파이트; CO; 피리딘; M1과 π 착물을 형성하는 니트릴 및 공액 디엔으로 이루어진 군으로부터 선택된 비하전 한자리 또는 두자리 리간드이고;K is phosphine; Phosphonates and derivatives thereof, arsenate and derivatives thereof; Phosphite; CO; Pyridine; An uncharged monodentate or bidentate ligand selected from the group consisting of nitriles and conjugated dienes forming π complexes with M 1 ;
n1은 카르벤 리간드의 수이고, 여기서 n1은 적어도 1이고, n1 > 1인 경우에 화학식 (IX)의 착물 중 카르벤 리간드는 동일하거나 또는 상이할 수 있고;n1 is the number of carbene ligands, where n1 is at least 1, and when n1> 1, the carbene ligands in the complex of formula (IX) may be the same or different;
m1은 리간드 L의 수이고, 여기서 m1은 0 또는 ≥ 1일 수 있고, m1 > 1인 경우에 리간드 L은 동일하거나 또는 상이할 수 있고;m1 is the number of ligands L, where m1 can be 0 or ≥ 1, and when m1> 1 the ligands L can be the same or different;
o1은 리간드 K의 수이고, 여기서 o1은 0 또는 ≥ 1일 수 있고, o > 1인 경우에 리간드 K는 동일하거나 또는 상이할 수 있고;o1 is the number of ligands K, where o1 can be 0 or ≥ 1, and when o> 1, ligand K can be the same or different;
여기서, n1 + m1 + o1의 합은 금속 원자의 산화 상태 및 배위수에 따라, 및 리간드 카르벤, L 및 K의 자리수에 따라, 및 또한 리간드, 카르벤 및 L의 전하에 따라 좌우되며, 단 n1은 적어도 1이다.Here, the sum of n1 + m1 + o1 depends on the oxidation state and coordination number of the metal atom, and on the number of digits of the ligands carbene, L and K, and also on the charge of the ligands, carbene and L n1 is at least 1.
적합한 삼중 방출체인 카르벤 착물은, 예를 들어 WO 2006/056418 A2, WO 2005/113704, WO 2007/115970, WO 2007/115981 및 WO 2008/000727, WO2009050281, WO2009050290, WO2011051404 및 WO2011073149에 기재되어 있다.Suitable triple emitter carbene complexes are described, for example, in WO 2006/056418 A2, WO 2005/113704, WO 2007/115970, WO 2007/115981 and WO 2008/000727, WO2009050281, WO2009050290, WO2011051404 and WO2011073149.
미국 특허 출원 번호 61/286046, 61/323885 및 유럽 특허 출원 10187176.2 (PCT/EP2010/069541)에 기재된 하기 화학식 (IXa)의 금속-카르벤 착물이 보다 바람직하다.Metal-carbene complexes of the formula (IXa) described below in U.S. Patent Application Nos. 61/286046, 61/323885 and European Patent Application 10187176.2 (PCT/EP2010/069541) are more preferred.
(IXa) (IXa)
상기 식에서, M, n1, Y, A2', A3', A4', A5', R51, R52, R53, R54, R55, R56, R57, R58, R59, K, L, m1 및 o1은 각각 하기와 같이 정의된다:In the above formula, M, n1, Y, A 2' , A 3' , A 4' , A 5' , R 51 , R 52 , R 53 , R 54 , R 55 , R 56 , R 57 , R 58 , R 59 , K, L, m1 and o1 are each defined as follows:
M은 Ir 또는 Pt이고,M is Ir or Pt,
n1은 1, 2 및 3으로부터 선택된 정수이고,n1 is an integer selected from 1, 2 and 3,
Y는 NR51, O, S 또는 C(R25)2이고,Y is NR 51 , O, S or C(R 25 ) 2 ,
A2', A3', A4' 및 A5'는 각각 독립적으로 N 또는 C이고, 여기서 2개 A = 질소 원자이고, 적어도 1개의 탄소 원자는 고리 내의 2개의 질소 원자 사이에 존재하고,A 2' , A 3' , A 4'and A 5'are each independently N or C, where 2 A = nitrogen atoms, and at least one carbon atom is between two nitrogen atoms in the ring,
R51은, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 1 내지 20개의 탄소 원자를 갖는 선형 또는 분지형 알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 3 내지 20개의 탄소 원자를 갖는 시클로알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 6 내지 30개의 탄소 원자를 갖는 치환 또는 비치환된 아릴 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 총 5 내지 18개의 탄소 원자 및/또는 헤테로원자를 갖는 치환 또는 비치환된 헤테로아릴 라디칼이고,R 51 is optionally a linear or branched alkyl radical having 1 to 20 carbon atoms, optionally having at least one heteroatom interposed and optionally having at least one functional group, at least one heteroatom optionally interposing and optionally having at least one functional group And a cycloalkyl radical having 3 to 20 carbon atoms, at least one heteroatom optionally interposed, optionally having at least one functional group, and a substituted or unsubstituted aryl radical having 6 to 30 carbon atoms, at least one heteroatom Is a substituted or unsubstituted heteroaryl radical optionally interrupted and optionally having at least one functional group and having a total of 5 to 18 carbon atoms and/or heteroatoms,
R52, R53, R54 및 R55는 각각, A2', A3', A4' 및/또는 A5'가 N인 경우에 자유 전자 쌍이거나, 또는 A2', A3', A4' 및/또는 A5'가 C인 경우에 각각 독립적으로 수소, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 1 내지 20개의 탄소 원자를 갖는 선형 또는 분지형 알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 3 내지 20개의 탄소 원자를 갖는 시클로알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 6 내지 30개의 탄소 원자를 갖는 치환 또는 비치환된 아릴 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 총 5 내지 18개의 탄소 원자 및/또는 헤테로원자를 갖는 치환 또는 비치환된 헤테로아릴 라디칼, 공여자 또는 수용자 작용을 갖는 기이거나, 또는R 52 , R 53 , R 54 and R 55 are each a free electron pair when A 2' , A 3' , A 4'and /or A 5'is N, or A 2' , A 3' , When A 4'and /or A 5'is C, each independently hydrogen, a linear or branched alkyl radical having at least one heteroatom, optionally having at least one functional group and having 1 to 20 carbon atoms, A cycloalkyl radical having 3 to 20 carbon atoms, optionally having at least one heteroatom, optionally having at least one functional group, at least one heteroatom, optionally having at least one functional group, and 6 to 30 carbon atoms A substituted or unsubstituted aryl radical having at least one heteroatom optionally substituted and optionally having at least one functional group and having 5 to 18 carbon atoms and/or heteroatoms in total, a substituted or unsubstituted heteroaryl radical, a donor Or a group with acceptor action, or
R53 및 R54는 A3' 및 A4'와 함께, 적어도 1개의 추가의 헤테로원자가 임의로 개재되고 총 5 내지 18개의 탄소 원자 및/또는 헤테로원자를 갖는 임의로 치환된 불포화 고리를 형성하고,R 53 and R 54 forms a A 3 'and A 4' and with at least one additional hetero atom is optionally interposed optionally substituted with 5 to 18 carbon atoms and / or heteroatoms, the total unsaturated ring,
R56, R57, R58 및 R59는 각각 독립적으로, 수소, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 1 내지 20개의 탄소 원자를 갖는 선형 또는 분지형 알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 3 내지 20개의 탄소 원자를 갖는 시클로알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 3 내지 20개의 탄소 원자를 갖는 시클로헤테로알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 6 내지 30개의 탄소 원자를 갖는 치환 또는 비치환된 아릴 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 총 5 내지 18개의 탄소 원자 및/또는 헤테로원자를 갖는 치환 또는 비치환된 헤테로아릴 라디칼, 공여자 또는 수용자 작용을 갖는 기이거나, 또는R 56 , R 57 , R 58 and R 59 are each independently hydrogen, a linear or branched alkyl radical having at least one functional group, optionally having at least one functional group and having 1 to 20 carbon atoms, at least A cycloalkyl radical having 3 to 20 carbon atoms optionally having one heteroatom interposed and optionally having at least one functional group, at least one heteroatom optionally having at least one functional group optionally having 3 to 20 carbon atoms, Having a cycloheteroalkyl radical, optionally substituted with at least one heteroatom, optionally having at least one functional group, and a substituted or unsubstituted aryl radical having 6 to 30 carbon atoms, at least one heteroatom optionally interposed and at least one functional group Or a substituted or unsubstituted heteroaryl radical having a total of 5 to 18 carbon atoms and/or heteroatoms, a group having donor or acceptor action, or
R56 및 R57, R57 및 R58, 또는 R58 및 R59는 이들이 결합되어 있는 탄소 원자와 함께, 적어도 1개의 헤테로원자가 임의로 개재되고 총 5 내지 18개의 탄소 원자 및/또는 헤테로원자를 갖는 임의로 치환된 포화, 불포화 또는 방향족 고리를 형성하고/거나,R 56 and R 57 , R 57 and R 58 , or R 58 and R 59 together with the carbon atom to which they are attached, have at least one heteroatom optionally interrupted and have a total of 5 to 18 carbon atoms and/or heteroatoms Form an optionally substituted saturated, unsaturated or aromatic ring, and/or
A5'가 C인 경우에, R55 및 R56은 함께, 헤테로원자, 방향족 단위, 헤테로방향족 단위 및/또는 관능기를 임의로 포함하고 총 1 내지 30개의 탄소 원자 및/또는 헤테로원자를 갖는 포화 또는 불포화, 선형 또는 분지형 가교를 형성하며, 여기에 탄소 원자 및/또는 헤테로원자를 포함하는 치환 또는 비치환된 5- 내지 8-원 고리가 임의로 융합되고,When A 5′ is C, R 55 and R 56 together are saturated, optionally containing heteroatoms, aromatic units, heteroaromatic units and/or functional groups and having 1 to 30 carbon atoms and/or heteroatoms in total, or Forming an unsaturated, linear or branched bridge, wherein a substituted or unsubstituted 5- to 8-membered ring containing carbon atoms and/or heteroatoms is optionally fused,
R25는 독립적으로, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 1 내지 20개의 탄소 원자를 갖는 선형 또는 분지형 알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 3 내지 20개의 탄소 원자를 갖는 시클로알킬 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 6 내지 30개의 탄소 원자를 갖는 치환 또는 비치환된 아릴 라디칼, 적어도 1개의 헤테로원자가 임의로 개재되고 적어도 1개의 관능기를 임의로 보유하고 총 5 내지 18개의 탄소 원자 및/또는 헤테로원자를 갖는 치환 또는 비치환된 헤테로아릴 라디칼이고,R 25 is independently a linear or branched alkyl radical having at least one heteroatom optionally interposed and optionally having at least one functional group and having 1 to 20 carbon atoms, at least one heteroatom arbitrarily interposed and at least one functional group A cycloalkyl radical optionally having 3 to 20 carbon atoms, a substituted or unsubstituted aryl radical having 6 to 30 carbon atoms, optionally having at least one heteroatom, optionally having at least one functional group, at least one A heteroaryl radical optionally substituted with heteroatoms and optionally having at least one functional group and having a total of 5 to 18 carbon atoms and/or heteroatoms,
K는 비하전 한자리 또는 두자리 리간드이고,K is an uncharged monodentate or bidentate ligand,
L은 일음이온성 또는 이음이온성 리간드, 바람직하게는 일음이온성 리간드이고, 이는 한자리 또는 두자리일 수 있고,L is a monoanionic or anionic ligand, preferably a monoanionic ligand, which may be monodentate or bidentate,
m1은 0, 1 또는 2이고, 여기서, m1이 2인 경우에 K 리간드는 동일하거나 또는 상이할 수 있고,m1 is 0, 1 or 2, wherein when m1 is 2, the K ligand may be the same or different,
o1은 0, 1 또는 2이고, 여기서 o1이 2인 경우에 L 리간드는 동일하거나 또는 상이할 수 있다.o1 is 0, 1 or 2, where L ligand can be the same or different when o1 is 2.
화학식 (IX)의 화합물은 바람직하게는 하기 화학식의 화합물이다:The compound of formula (IX) is preferably a compound of the formula:
. .
추가의 적합한 비-카르벤 방출체 물질은 하기 언급된다:Additional suitable non-carbene emitter materials are mentioned below:
가장 바람직한 인광 청색 방출체는 화학식 의 화합물이다.The most preferred phosphorescent blue emitter is the chemical formula It is a compound.
동종리간드성 금속-카르벤 착물은 면 또는 자오선 이성질체의 형태로 존재할 수 있고, 면 이성질체가 바람직하다.Alloligand metal-carbene complexes may exist in the form of a plane or meridional isomer, with a plane isomer being preferred.
이종리간드성 금속-카르벤 착물의 경우에, 4종의 상이한 이성질체가 존재할 수 있고, 유사-면 이성질체가 바람직하다.In the case of a heteroligand metal-carbene complex, four different isomers may be present, with pseudo-surface isomers being preferred.
발광 층은 방출체 물질 이외에 추가의 성분을 포함할 수 있다. 예를 들어, 방출체 물질의 발광색을 변경하기 위해 형광 염료가 발광 층에 존재할 수 있다. 또한 - 바람직한 실시양태에서 - 매트릭스 물질이 사용될 수 있다. 이 매트릭스 물질은 중합체, 예를 들어 폴리(N-비닐카르바졸) 또는 폴리실란일 수 있다. 그러나, 매트릭스 물질은 소분자, 예를 들어 4,4'-N,N'-디카르바졸비페닐 (CDP=CBP) 또는 3급 방향족 아민, 예를 들어 TCTA일 수 있다. 본 발명의 바람직한 실시양태에서, 적어도 하나의 화학식 (I)의 화합물이 매트릭스 물질로서 사용된다.The light-emitting layer can include additional components in addition to the emitter material. For example, a fluorescent dye may be present in the light-emitting layer to change the emission color of the emitter material. Also-in preferred embodiments-matrix materials can be used. This matrix material can be a polymer, for example poly(N-vinylcarbazole) or polysilane. However, the matrix material can be a small molecule, for example 4,4'-N,N'-dicarbazolebiphenyl (CDP=CBP) or a tertiary aromatic amine, for example TCTA. In a preferred embodiment of the invention, at least one compound of formula (I) is used as matrix material.
바람직한 실시양태에서, 발광 층은 2 내지 40 중량%, 바람직하게는 5 내지 35 중량%의, 상기 언급된 방출체 물질 중 적어도 하나, 및 60 내지 98 중량%, 바람직하게는 75 내지 95 중량%의, 상기 언급된 매트릭스 물질 중 적어도 하나 - 한 실시양태에서 적어도 하나의 화학식 (I)의 화합물 - 로부터 형성되고, 여기서 방출체 물질 및 매트릭스 물질의 합은 100 중량%이다.In a preferred embodiment, the light emitting layer is 2 to 40% by weight, preferably 5 to 35% by weight, at least one of the above-mentioned emitter materials, and 60 to 98% by weight, preferably 75 to 95% by weight , Formed from at least one of the aforementioned matrix materials-in one embodiment at least one compound of formula (I)-wherein the sum of the emitter material and the matrix material is 100% by weight.
화학식 (I)의 화합물은 특히 화학식 (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) 또는 (In)의 화합물, 매우 특히 A-1 내지 A-65, B-1 내지 B-8, C-1 내지 C-65, D-1 내지 D-8, E-1 내지 E-65, 또는 F-1 내지 F-65이다.Compounds of formula (I) are especially those of formula (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) or (In) , Very particularly A-1 to A-65, B-1 to B-8, C-1 to C-65, D-1 to D-8, E-1 to E-65, or F-1 to F- 65.
특히 바람직한 실시양태에서, 발광 층은 화학식 (I)의 화합물, 예컨대 예를 들어 및 바람직하게는 화학식 의 2종의 카르벤 착물을 포함한다. 상기 실시양태에서, 발광 층은 2 내지 40 중량%, 바람직하게는 5 내지 35 중량%의 , 및 60 내지 98 중량%, 바람직하게는 65 내지 95 중량%의 화학식 (I) 및 의 화합물로부터 형성되고, 여기서 카르벤 착물 및 화학식 (I)의 화합물의 총합은 100 중량%이다.In a particularly preferred embodiment, the light emitting layer is a compound of formula (I), for example And preferably a chemical formula It contains two kinds of carbene complexes. In the above embodiment, the light emitting layer is 2 to 40% by weight, preferably 5 to 35% by weight , And 60 to 98% by weight, preferably 65 to 95% by weight of formula (I) and It is formed from a compound, wherein the total of the carbene complex and the compound of formula (I) is 100% by weight.
따라서, 화학식 (I)의 화합물과 함께 OLED에서 매트릭스 물질 및/또는 정공/여기자 차단제 물질 및/또는 전자/여기자 차단제 물질 및/또는 정공 주입 물질 및/또는 전자 주입 물질 및/또는 정공 전도체 물질 및/또는 전자 전도체 물질로서, 바람직하게는 매트릭스 물질 및/또는 정공/여기자 차단제 물질로서 사용하기에 적합한 금속 착물은, 예를 들어 또한 WO 2005/019373 A2, WO 2006/056418 A2, WO 2005/113704, WO 2007/115970, WO 2007/115981 및 WO 2008/000727에 기재된 바와 같은 카르벤 착물이다. 여기서, 인용된 WO 출원의 개시내용을 명시적으로 참조하고, 이들 개시내용은 본원의 내용에 포함되는 것으로 간주되어야 한다.Accordingly, the matrix material and/or hole/exciter blocker material and/or electron/exciter blocker material and/or hole injection material and/or electron injection material and/or hole conductor material and/or in the OLED together with the compound of formula (I) and/or Or a metal complex suitable for use as an electron conductor material, preferably as a matrix material and/or hole/exciter blocker material, for example also WO 2005/019373 A2, WO 2006/056418 A2, WO 2005/113704, WO Carbene complexes as described in 2007/115970, WO 2007/115981 and WO 2008/000727. Here, the disclosures of the cited WO applications are explicitly referenced, and these disclosures should be considered to be included in the content of the present application.
본 발명의 화합물은 또한 인광 녹색 방출체를 위한 호스트로서 사용될 수 있다. 적합한 인광 녹색 방출체는, 예를 들어 하기 공개공보에 명시되어 있다: WO2006014599, WO20080220265, WO2009073245, WO2010027583, WO2010028151, US20110227049, WO2011090535, WO2012/08881, WO20100056669, WO20100118029, WO20100244004, WO2011109042, WO2012166608, US20120292600, EP2551933A1; US6687266, US20070190359, US20070190359, US20060008670; WO2006098460, US20110210316, WO 2012053627; US6921915, US20090039776; 및 JP2007123392.The compounds of the invention can also be used as hosts for phosphorescent green emitters. Suitable phosphorescent green emitters are specified, for example, in the following publications: WO2006014599, WO20080220265, WO2009073245, WO2010027583, WO2010028151, US20110227049, WO2011090535, WO2012/08881, WO20100056669, WO20100118029, WO20100244004, WO2011109042, WO2012166608; US6687266, US20070190359, US20070190359, US20060008670; WO2006098460, US20110210316, WO 2012053627; US6921915, US20090039776; And JP2007123392.
적합한 인광 녹색 방출체의 예는 하기 나타내었다:Examples of suitable phosphorescent green emitters are shown below:
정공 차단 층이 존재하는 경우에 - OLED에 전형적으로 사용되는 정공 차단제 물질은, 예를 들어 2,6-비스(N-카르바졸릴)피리딘 (mCPy), 2,9-디메틸-4,7-디페닐-1,10-페난트롤린 (바토쿠프로인, (BCP)), 비스(2-메틸-8-퀴놀리네이토)-4-페닐페닐레이토)알루미늄(III) (BAlq), 페노티아진 S,S-디옥시드 유도체 및 1,3,5-트리스(N-페닐-2-벤질이미다졸릴)벤젠) (TPBI)이고, TPBI는 또한 전자-전도성 물질로서 적합하다. 추가로 적합한 정공 차단제 및/또는 전자 전도체 물질은 2,2',2"-(1,3,5-벤젠트리일)트리스(1-페닐-1H-벤즈이미다졸), 2-(4-비페닐릴)-5-(4-tert-부틸페닐)-1,3,4-옥사디아졸, 8-히드록시퀴놀리노레이토리튬, 4-(나프탈렌-1-일)-3,5-디페닐-4H-1,2,4-트리아졸, 1,3-비스[2-(2,2'-비피리딘-6-일)-1,3,4-옥사디아조-5-일]벤젠, 4,7-디페닐-1,10-페난트롤린, 3-(4-비페닐릴)-4-페닐-5-tert-부틸페닐-1,2,4-트리아졸, 6,6'-비스[5-(비페닐-4-일)-1,3,4-옥사디아조-2-일]-2,2'-비피리딜, 2-페닐-9,10-디(나프탈렌-2-일)안트라센, 2,7-비스[2-(2,2'-비피리딘-6-일)-1,3,4-옥사디아조-5-일]-9,9-디메틸플루오렌, 1,3-비스[2-(4-tert-부틸페닐)-1,3,4-옥사디아조-5-일]벤젠, 2-(나프탈렌-2-일)-4,7-디페닐-1,10-페난트롤린, 트리스-(2,4,6-트리메틸-3-(피리딘-3-일)페닐)보란, 2,9-비스(나프탈렌-2-일)-4,7-디페닐-1,10-페난트롤린, 1-메틸-2-(4-(나프탈렌-2-일)페닐)-1H-이미다조[4,5-f][1,10]-페난트롤린이다. 추가 실시양태에서, 정공/여기자 차단 층 (4)으로서 또는 발광 층 (3)에서 매트릭스 물질로서, WO2006/100298에 개시된 바와 같은 카르보닐 기를 포함하는 기를 통해 결합된 방향족 또는 헤테로방향족 고리를 포함하는 화합물, 디실릴카르바졸, 디실릴벤조푸란, 디실릴벤조티오펜, 디실릴벤조포스폴, 디실릴벤조티오펜 S-옥시드 및 디실릴벤조티오펜 S,S-디옥시드 (예를 들어, WO2009/003919 및 WO2009003898에 명시된 바와 같음) 및 디실릴 화합물 (WO2008/034758에 개시된 바와 같음)로 이루어진 군으로부터 선택된 디실릴 화합물을 사용하는 것이 가능하다.When a hole blocking layer is present-hole blocking materials typically used in OLEDs are, for example, 2,6-bis(N-carbazolyl)pyridine (mCPy), 2,9-dimethyl-4,7- Diphenyl-1,10-phenanthroline (Batocuproin, (BCP)), bis(2-methyl-8-quinolinate)-4-phenylphenylleato)aluminum(III) (BAlq), phe Nothiazine S,S-dioxide derivative and 1,3,5-tris(N-phenyl-2-benzylimidazolyl)benzene) (TPBI), TPBI is also suitable as an electron-conducting material. Further suitable hole blockers and/or electron conductor materials are 2,2',2"-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole), 2-(4-ratio Phenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, 8-hydroxyquinolinoleitolithium, 4-(naphthalen-1-yl)-3,5-diphenyl -4H-1,2,4-triazole, 1,3-bis[2-(2,2'-bipyridin-6-yl)-1,3,4-oxadiazo-5-yl]benzene, 4,7-diphenyl-1,10-phenanthroline, 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole, 6,6'- Bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl, 2-phenyl-9,10-di(naphthalene-2 -Yl)anthracene, 2,7-bis[2-(2,2'-bipyridin-6-yl)-1,3,4-oxadiazo-5-yl]-9,9-dimethylfluorene, 1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene, 2-(naphthalen-2-yl)-4,7-diphenyl- 1,10-phenanthroline, tris-(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane, 2,9-bis(naphthalen-2-yl)-4,7-di Phenyl-1,10-phenanthroline, 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[4,5-f][1,10]-phenanthroline In a further embodiment, comprising an aromatic or heteroaromatic ring bonded via a group comprising a carbonyl group as disclosed in WO2006/100298, as a hole/exciter blocking layer 4 or as a matrix material in the light emitting layer 3 Compounds, disilylcarbazole, disilylbenzofuran, disilylbenzothiophene, disilylbenzophosphol, disilylbenzothiophene S-oxide and disilylbenzothiophene S,S-dioxide (e.g., It is possible to use disilyl compounds selected from the group consisting of WO2009/003919 and WO2009003898) and disilyl compounds (as disclosed in WO2008/034758).
본 발명의 OLED의 층 (5)에 적합한 전자 전도체 물질은 금속 킬레이팅된 옥시노이드 화합물, 예컨대 2,2',2"-(1,3,5-페닐렌)트리스[1-페닐-1H-벤즈이미다졸] (TPBI), 트리스(8-퀴놀리놀레이토)알루미늄 (Alq3), 페난트롤린 기재의 화합물, 예컨대 2,9-디메틸-4,7-디페닐-1,10-페난트롤린 (DDPA = BCP) 또는 4,7-디페닐-1,10-페난트롤린 (DPA), 및 아졸 화합물, 예컨대 2-(4-비페닐릴)-5-(4-t-부틸페닐)-1,3,4-옥사디아졸 (PBD) 및 3-(4-비페닐릴)-4-페닐-5-(4-t-부틸페닐)-1,2,4-트리아졸 (TAZ), 8-히드록시퀴놀리놀레이토리튬 (Liq), 4,7-디페닐-1,10-페난트롤린 (BPhen), 비스(2-메틸-8-퀴놀리놀레이토)-4-(페닐페놀레이토)알루미늄 (BAlq), 1,3-비스[2-(2,2'-비피리딘-6-일)-1,3,4-옥사디아조-5-일]벤젠 (Bpy-OXD), 6,6'-비스[5-(비페닐-4-일)-1,3,4-옥사디아조-2-일]-2,2'-비피리딜 (BP-OXD-Bpy), 4-(나프탈렌-1-일)-3,5-디페닐-4H-1,2,4-트리아졸 (NTAZ), 2,9-비스(나프탈렌-2-일)-4,7-디페닐-1,10-페난트롤린 (NBphen), 2,7-비스[2-(2,2'-비피리딘-6-일)-1,3,4-옥사디아조-5-일]-9,9-디메틸플루오렌 (Bby-FOXD), 1,3-비스[2-(4-tert-부틸페닐)-1,3,4-옥사디아조-5-일]벤젠 (OXD-7), 트리스(2,4,6-트리메틸-3-(피리딘-3-일)페닐)보란 (3TPYMB), 1-메틸-2-(4-(나프탈렌-2-일)페닐)-1H-이미다조[4,5-f][1,10]페난트롤린 (2-NPIP), 2-페닐-9,10-디(나프탈렌-2-일)안트라센 (PADN), 2-(나프탈렌-2-일)-4,7-디페닐-1,10-페난트롤린 (HNBphen)을 포함한다. 층 (5)은 전자 수송을 용이하게 하도록, 및 OLED의 층의 계면에서 여기자의 켄칭을 방지하기 위해 완충 층 또는 장벽 층으로서 모두 작용할 수 있다. 층 (5)은 바람직하게는 전자의 이동도를 개선하고, 여기자의 켄칭을 감소시킨다. 바람직한 실시양태에서, TPBI가 전자 전도체 물질로서 사용된다. 또 다른 바람직한 실시양태에서, BCP가 전자 전도체 물질로서 사용된다. 원칙적으로, 전자 전도체 층이 전자 전도체 물질로서 적어도 하나의 화학식 (I)의 화합물을 포함하는 것이 가능하다.Suitable electron conductor materials for layer (5) of the inventive OLED are metal chelated oxynoid compounds, such as 2,2',2"-(1,3,5-phenylene)tris[1-phenyl-1H- Benzimidazole] (TPBI), tris(8-quinolinolato)aluminum (Alq 3 ), compounds based on phenanthrolines, such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthrol Lean (DDPA = BCP) or 4,7-diphenyl-1,10-phenanthroline (DPA), and azole compounds such as 2-(4-biphenylyl)-5-(4-t-butylphenyl) -1,3,4-oxadiazole (PBD) and 3-(4-biphenylyl)-4-phenyl-5-(4-t-butylphenyl)-1,2,4-triazole (TAZ) , 8-hydroxyquinolinoleitolithium (Liq), 4,7-diphenyl-1,10-phenanthroline (BPhen), bis(2-methyl-8-quinolinolato)-4-(phenyl Phenolato) Aluminum (BAlq), 1,3-bis[2-(2,2'-bipyridin-6-yl)-1,3,4-oxadiazo-5-yl]benzene (Bpy-OXD) , 6,6'-bis[5-(biphenyl-4-yl)-1,3,4-oxadiazo-2-yl]-2,2'-bipyridyl (BP-OXD-Bpy), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl -1,10-phenanthroline (NBphen), 2,7-bis[2-(2,2'-bipyridin-6-yl)-1,3,4-oxadiazo-5-yl]-9 ,9-dimethylfluorene (Bby-FOXD), 1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene (OXD-7), Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazo[ 4,5-f][1,10]phenanthroline (2-NPIP), 2-phenyl-9,10-di(naphthalen-2-yl)anthracene (PADN), 2-(naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline (HNBphen) Layer (5) is a buffer layer to facilitate electron transport and to prevent quenching of excitons at the interface of the layer of the OLED. Or as a barrier layer All can work. Layer 5 preferably improves the mobility of electrons and reduces the quenching of excitons. In a preferred embodiment, TPBI is used as the electron conductor material. In another preferred embodiment, BCP is used as the electron conductor material. In principle, it is possible for the electron conductor layer to contain at least one compound of formula (I) as the electron conductor material.
일차적으로 층 두께를 보다 넉넉하게 하고 (핀홀/단락 방지), 이차적으로 장치의 작동 전압을 최소화하기 위해 전자-수송 층을 또한 전자적으로 도핑하여, 사용되는 물질의 수송 특성을 개선할 수 있다. 전자 도핑은 통상의 기술자에게 공지되어 있으며, 예를 들어 문헌 [W. Gao, A. Kahn, J. Appl. Phys., Vol. 94, number 1, 1 July 2003 (p-도핑된 유기 층); A. G. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett., Vol. 82, number 25, 23 June 2003 및 Pfeiffer et al., Organic Electronics 2003, 4, 89 - 103 및 K. Walzer, B. Maennig, M. Pfeiffer, K. Leo, Chem. Soc. Rev. 2007, 107, 1233]에 개시되어 있다. 예를 들어, 전자-수송 층의 전기적 n-도핑으로 이어지는 혼합물을 사용하는 것이 가능하다. n-도핑은 환원 물질의 첨가에 의해 달성된다. 이들 혼합물은 예를 들어, 상기 언급된 전자 수송 물질과, 알칼리 금속/알칼리 토금속 또는 알칼리 금속/알칼리 토금속 염, 예를 들어 Li, Cs, Ca, Sr, Cs2CO3과의 혼합물, 알칼리 금속 착물, 예를 들어 8-히드록시퀴놀레이토리륨 (Liq)과의 혼합물, 및 EP1786050으로부터의 Y, Ce, Sm, Gd, Tb, Er, Tm, Yb, Li3N, Rb2CO3, 디포타슘 프탈레이트, W(hpp)4와의 혼합물, 또는 EP1837926B1, EP1837927, EP2246862 및 WO2010132236에 기재된 화합물과의 혼합물일 수 있다.The electron-transport layer can also be electronically doped primarily to make the layer thickness more generous (pinhole/short circuit protection) and to minimize the operating voltage of the device, thereby improving the transport properties of the materials used. Electronic doping is known to those skilled in the art, see, eg, W. Gao, A. Kahn, J. Appl. Phys., Vol. 94, number 1, 1 July 2003 (p-doped organic layer); AG Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett., Vol. 82, number 25, 23 June 2003 and Pfeiffer et al., Organic Electronics 2003, 4, 89-103 and K. Walzer, B. Maennig, M. Pfeiffer, K. Leo, Chem. Soc. Rev. 2007, 107, 1233. For example, it is possible to use mixtures that lead to electrical n-doping of the electron-transporting layer. n-doping is achieved by the addition of reducing materials. These mixtures are, for example, mixtures of the aforementioned electron transport materials with alkali metal/alkaline earth metals or alkali metal/alkaline earth metal salts, such as Li, Cs, Ca, Sr, Cs 2 CO 3 , alkali metal complexes , Mixtures with, for example, 8-hydroxyquinolatorium (Liq), and Y, Ce, Sm, Gd, Tb, Er, Tm, Yb, Li 3 N, Rb 2 CO 3 , dipotassium from EP1786050 Phthalates, mixtures with W(hpp) 4 , or mixtures with compounds described in EP1837926B1, EP1837927, EP2246862 and WO2010132236.
알칼리 금속 히드록시퀴놀레이트 착물, 바람직하게는 Liq와 디벤조푸란 화합물의 혼합물을 전자-수송 층에 사용하는 것이 마찬가지로 가능하다. WO2011/157790을 참조한다. WO2011/157790에 기재된 디벤조푸란 화합물 A-1 내지 A-36 및 B-1 내지 B-22가 바람직하고, 여기서 디벤조푸란 화합물 이 가장 바람직하다.It is likewise possible to use alkali metal hydroxyquinolate complexes, preferably mixtures of Liq and dibenzofuran compounds in the electron-transporting layer. See WO2011/157790. Dibenzofuran compounds A-1 to A-36 and B-1 to B-22 described in WO2011/157790 are preferred, where dibenzofuran compounds This is most preferred.
바람직한 실시양태에서, 전자-수송 층은 Liq를 99 내지 1 중량%, 바람직하게는 75 내지 25 중량%, 보다 바람직하게는 약 50 중량%의 양으로 포함하고, 여기서 Liq의 양 및 디벤조푸란 화합물(들), 특히 ETM-1의 화합물의 양은 총 100 중량%이다.In a preferred embodiment, the electron-transporting layer comprises Liq in an amount of 99 to 1% by weight, preferably 75 to 25% by weight, more preferably about 50% by weight, wherein the amount of Liq and the dibenzofuran compound The amount of compound(s), especially ETM-1, is 100% by weight in total.
알칼리 금속 히드록시퀴놀레이트 착물, 바람직하게는 Liq와 피리딘 화합물의 혼합물을 전자-수송 층에 사용하는 것이 마찬가지로 가능하다. WO2011/157779를 참조한다. 화학식 의 피리딘 화합물이 특히 바람직하다.It is likewise possible to use alkali metal hydroxyquinolate complexes, preferably mixtures of Liq and pyridine compounds, in the electron-transporting layer. See WO2011/157779. Chemical formula The pyridine compound of is particularly preferred.
추가의 바람직한 실시양태에서, 전자-수송 층은 WO2012/111462, WO2012/147397, WO2012014621에 기재된 화합물, 예컨대 예를 들어 화학식 의 화합물, US2012/0261654에 기재된 화합물, 예컨대 예를 들어 화학식 의 화합물, 및 WO2012/115034에 기재된 화합물, 예컨대 예를 들어 화학식 의 화합물을 포함한다.In a further preferred embodiment, the electron-transporting layer is a compound described in WO2012/111462, WO2012/147397, WO2012014621, for example, a formula Of the compound, a compound described in US2012/0261654, such as, for example, the formula And compounds described in WO2012/115034, such as, for example, the formula Contains compounds of.
정공 전도체 물질 및 전자 전도체 물질로서 상기 언급된 물질들 중에서, 일부는 여러 기능을 완수할 수 있다. 예를 들어, 전자-전도성 물질 중 일부는 이들이 저-준위 HOMO를 갖는 경우에 동시에 정공-차단 물질이기도 하다. 이들은, 예를 들어 정공/여기자 차단 층 (4)에 사용될 수 있다. 그러나, 마찬가지로 정공/여기자 차단제로서의 기능이 또한 층 (5)에 의해 채택되는 것도 가능하므로, 층 (4)은 사용되지 않을 수 있다.Among the above-mentioned materials as hole conductor materials and electron conductor materials, some can fulfill several functions. For example, some of the electron-conducting materials are also hole-blocking materials at the same time if they have a low-level HOMO. These can be used, for example, in the hole/excitation barrier layer 4. However, layer 4 may not be used, as it is also possible that the function as a hole/exciter blocker is also adopted by layer 5.
일차적으로 층 두께를 보다 넉넉하게 하고 (핀홀/단락 방지), 이차적으로 장치의 작동 전압을 최소화하기 위해 전하 수송 층을 또한 전자적으로 도핑하여, 사용되는 물질의 수송 특성을 개선할 수 있다. 예를 들어, 정공 전도체 물질은 전자 수용자로 도핑될 수 있고; 예를 들어, 프탈로시아닌 또는 아릴아민, 예컨대 TPD 또는 TDTA는 테트라플루오로테트라시안퀴노디메탄 (F4-TCNQ)으로 또는 MoO3 또는 WO3으로 도핑될 수 있다. 전자 전도체 물질은, 예를 들어 알칼리 금속, 예를 들어 리튬 함유 Alq3으로 도핑될 수 있다. 또한, 전자 전도체는 염, 예컨대 Cs2CO3, 또는 8-히드록시퀴놀레이토리튬 (Liq)으로 도핑될 수 있다. 전자 도핑은 통상의 기술자에게 공지되어 있으며, 예를 들어 문헌 [W. Gao, A. Kahn, J. Appl. Phys., Vol. 94, number 1, 1 July 2003 (p-도핑된 유기 층); A. G. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo. Appl. Phys. Lett., Vol. 82, number 25, 23 June 2003 및 Pfeiffer et al., Organic Electronics 2003, 4, 89 - 103]에 개시되어 있다. 예를 들어, 카르벤 착물, 예를 들어 Ir(dpbic)3 이외에 정공 전도체 층은 MoO3 또는 WO3으로 도핑될 수 있다. 예를 들어, 전자 전도체 층은 Cs2CO3으로 도핑된 BCP를 포함할 수 있다.The charge transport layer can also be electronically doped primarily to make the layer thickness more generous (pinhole/short circuit protection) and to minimize the operating voltage of the device, thereby improving the transport properties of the materials used. For example, the hole conductor material can be doped with electron acceptors; For example, phthalocyanine or arylamine, such as TPD or TDTA, can be doped with tetrafluorotetracyanoquinomethane (F4-TCNQ) or with MoO 3 or WO 3 . The electron conductor material can be doped, for example, with an alkali metal, for example Alq 3 containing lithium. In addition, the electron conductor can be doped with a salt, such as Cs 2 CO 3 , or 8-hydroxyquinolelithium (Liq). Electronic doping is known to those skilled in the art, see, eg, W. Gao, A. Kahn, J. Appl. Phys., Vol. 94, number 1, 1 July 2003 (p-doped organic layer); AG Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo. Appl. Phys. Lett., Vol. 82, number 25, 23 June 2003 and Pfeiffer et al., Organic Electronics 2003, 4, 89-103. For example, a hole conductor layer other than a carbene complex, for example Ir(dpbic) 3 , can be doped with MoO 3 or WO 3 . For example, the electron conductor layer can include BCP doped with Cs 2 CO 3 .
캐소드 (6)는 전자 또는 음전하 캐리어를 도입하도록 작용하는 전극이다. 캐소드에 적합한 물질은 원소 주기율표 (IUPAC 구버전)의 Ia족의 알칼리 금속, 예를 들어 Li, Cs, IIa족의 알칼리 토금속, 예를 들어 칼슘, 바륨 또는 마그네슘, IIb족의 금속 (란타나이드 및 악티니드, 예를 들어 사마륨 포함)으로 이루어진 군으로부터 선택된다. 또한, 알루미늄 또는 인듐과 같은 금속, 및 언급된 모든 금속의 조합물을 사용하는 것이 또한 가능하다. 또한, 알칼리 금속, 특히 리튬-포함 유기금속 화합물, 또는 알칼리 금속 플루오라이드, 예컨대 예를 들어, LiF, CsF, 또는 KF를 유기 층과 캐소드 사이에 적용하여 작동 전압을 감소시킬 수 있다.The cathode 6 is an electrode that acts to introduce electrons or negative charge carriers. Suitable materials for the cathode are alkali metals of group Ia of the Periodic Table of Elements (old version of IUPAC), for example alkaline earth metals of group Li, Cs, IIa, such as calcium, barium or magnesium, metals of group IIb (lanthanide and actinide For example, samarium). It is also possible to use metals such as aluminum or indium, and combinations of all the metals mentioned. In addition, an alkali metal, in particular a lithium-comprising organometallic compound, or an alkali metal fluoride, such as, for example, LiF, CsF, or KF, can be applied between the organic layer and the cathode to reduce the operating voltage.
본 발명에 따른 OLED는 통상의 기술자에게 공지된 추가의 층을 추가로 포함할 수 있다. 예를 들어, 양전하의 수송을 용이하게 하고/거나 층들의 밴드 갭을 서로 부합시키는 층이 층 (2)과 발광 층 (3) 사이에 적용될 수 있다. 대안적으로, 이러한 추가의 층은 보호 층으로서 작용할 수 있다. 유사한 방식으로, 음전하의 수송을 용이하게 하고/거나 층들 사이의 밴드 갭을 서로 부합시키기 위해, 추가의 층이 발광 층 (3)과 층 (4) 사이에 존재할 수 있다. 대안적으로, 이러한 층은 보호 층으로서 작용할 수 있다.The OLED according to the invention may further comprise additional layers known to those skilled in the art. For example, a layer that facilitates the transport of positive charges and/or matches the band gap of the layers can be applied between the layer 2 and the light emitting layer 3. Alternatively, this additional layer can act as a protective layer. In a similar manner, additional layers may be present between the light emitting layer 3 and the layer 4 to facilitate the transport of negative charges and/or to match the band gaps between the layers. Alternatively, this layer can act as a protective layer.
바람직한 실시양태에서, 본 발명의 OLED는 층 (1) 내지 (6) 이외에 하기 언급된 다음 층 중 적어도 1개를 포함한다:In a preferred embodiment, the OLED of the invention comprises at least one of the following layers mentioned below in addition to layers (1) to (6):
- 2 내지 100nm, 바람직하게는 5 내지 50nm의 두께를 갖는, 애노드 (1)와 정공 수송층 (2) 사이의 정공 주입 층;A hole injection layer between the anode 1 and the hole transport layer 2, having a thickness of 2 to 100 nm, preferably 5 to 50 nm;
- 정공-수송 층 (2)과 발광 층 (3) 사이의 전자 차단 층;-An electron blocking layer between the hole-transport layer 2 and the light-emitting layer 3;
- 전자-수송 층 (5)과 캐소드 (6) 사이의 전자 주입 층.-An electron injection layer between the electron-transporting layer 5 and the cathode 6.
정공 주입 층을 위한 물질은 구리 프탈로시아닌, 4,4',4"-트리스(N-3-메틸페닐-N-페닐아미노)트리페닐아민 (m-MTDATA), 4,4',4"-트리스(N-(2-나프틸)-N-페닐아미노)트리페닐아민 (2T-NATA), 4,4',4"-트리스(N-(1-나프틸)-N-페닐아미노)트리페닐아민 (1T-NATA), 4,4',4"-트리스(N,N-디페닐아미노)트리페닐아민 (NATA), 산화티타늄 프탈로시아닌, 2,3,5,6-테트라플루오로-7,7,8,8-테트라시아노퀴노디메탄 (F4-TCNQ), 피라지노[2,3-f][1,10]페난트롤린-2,3-디카르보니트릴 (PPDN), N,N,N',N'-테트라키스(4-메톡시페닐)벤지딘 (MeO-TPD), 2,7-비스[N,N-비스(4-메톡시페닐)아미노]-9,9-스피로비플루오렌 (MeO-스피로-TPD), 2,2'-비스[N,N-비스(4-메톡시페닐)아미노]-9,9-스피로비플루오렌 (2,2'-MeO-스피로-TPD), N,N'-디페닐-N,N'-디-[4-(N,N-디톨릴아미노)페닐]벤지딘 (NTNPB), N,N'-디페닐-N,N'-디-[4-(N,N-디페닐아미노)페닐]벤지딘 (NPNPB), N,N'-디(나프탈렌-2-일)-N,N'-디페닐벤젠-1,4-디아민 (α-NPP)으로부터 선택될 수 있다. 원칙적으로, 정공 주입 층이 정공 주입 물질로서 적어도 하나의 화학식 (I)의 화합물을 포함하는 것이 가능하다. 또한, 중합체성 정공-주입 물질, 예컨대 폴리(N-비닐카르바졸) (PVK), 폴리티오펜, 폴리피롤, 폴리아닐린, 자가-도핑 중합체, 예컨대 예를 들어 황산화 폴리(티오펜-3-[2[(2-메톡시에톡시)에톡시]-2,5-디일) (플렉스트로닉스(Plextronics)로부터 상업적으로 입수가능한 플렉스코어(Plexcore)® OC 전도성 잉크), 및 공중합체, 예컨대 폴리(3,4-에틸렌디옥시티오펜)/폴리(4-스티렌술포네이트) (또한 PEDOT/PSS로 지칭됨)가 사용될 수 있다.The material for the hole injection layer is copper phthalocyanine, 4,4',4"-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 4,4',4"-tris( N-(2-naphthyl)-N-phenylamino)triphenylamine (2T-NATA), 4,4',4"-tris(N-(1-naphthyl)-N-phenylamino)triphenylamine (1T-NATA), 4,4',4"-tris(N,N-diphenylamino)triphenylamine (NATA), titanium phthalocyanine oxide, 2,3,5,6-tetrafluoro-7,7 ,8,8-tetracyanoquinodimethane (F4-TCNQ), pyrazino[2,3-f][1,10]phenanthroline-2,3-dicarbonitrile (PPDN), N,N, N',N'-tetrakis(4-methoxyphenyl)benzidine (MeO-TPD), 2,7-bis[N,N-bis(4-methoxyphenyl)amino]-9,9-spirobiflu Orene (MeO-spiro-TPD), 2,2'-bis[N,N-bis(4-methoxyphenyl)amino]-9,9-spirobifluorene (2,2'-MeO-spiro-TPD ), N,N'-diphenyl-N,N'-di-[4-(N,N-ditolylamino)phenyl]benzidine (NTNPB), N,N'-diphenyl-N,N'-di -[4-(N,N-diphenylamino)phenyl]benzidine (NPNPB), N,N'-di(naphthalen-2-yl)-N,N'-diphenylbenzene-1,4-diamine (α -NPP). In principle, it is possible for the hole injection layer to contain at least one compound of formula (I) as a hole injection material. In addition, polymeric hole-injecting materials such as poly(N-vinylcarbazole) (PVK), polythiophene, polypyrrole, polyaniline, self-doped polymers such as, for example, sulfated poly(thiophene-3-[2 [(2-methoxyethoxy)ethoxy]-2,5-diyl) (Plexcore® OC conductive ink commercially available from Plextronics), and copolymers such as poly(3, 4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (also referred to as PEDOT/PSS) can be used.
화학식 (I)의 화합물, 특히 화학식 (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) 또는 (In)의 화합물, 매우 특히 화합물 A-1 내지 A-65, B-1 내지 B-8, C-1 내지 C-65, D-1 내지 D-8, E-1 내지 E-65, 또는 F-1 내지 F-65가 전자/여기자 차단제 물질로서 사용될 수 있다.Compounds of formula (I), especially compounds of formula (Ia), (Ib), (Ic), (Id), (Ie), (If), (Ii), (Ij), (Il) or (In) , Very particularly compounds A-1 to A-65, B-1 to B-8, C-1 to C-65, D-1 to D-8, E-1 to E-65, or F-1 to F -65 can be used as the electron/exciter blocker material.
전자/여기자 차단제 물질로서 사용하기에 적합한 금속 착물은, 예를 들어 WO2005/019373A2, WO2006/056418A2, WO2005/113704, WO2007/115970, WO2007/115981 및 WO2008/000727에 기재된 바와 같은 카르벤 착물이다. 적합한 카르벤 착물의 한 예는 화합물 HTM-1이다.Metal complexes suitable for use as electron/exciter blocker materials are, for example, carbene complexes as described in WO2005/019373A2, WO2006/056418A2, WO2005/113704, WO2007/115970, WO2007/115981 and WO2008/000727. One example of a suitable carbene complex is compound HTM-1.
전자 주입 층을 위한 물질로서, 예를 들어 LiF가 선택될 수 있다. 원칙적으로, 전자 주입 층이 전자 주입 물질로서 적어도 하나의 화학식 (I)의 화합물을 포함하는 것이 가능하다.As a material for the electron injection layer, LiF can be selected, for example. In principle, it is possible for the electron injection layer to contain at least one compound of formula (I) as the electron injection material.
통상의 기술자는 (예를 들어, 전기화학적 연구를 기초로 하여) 적합한 물질을 선택하는 방법을 인지하고 있다. 개별 층에 적합한 물질은 통상의 기술자에게 공지되어 있고, 예를 들어 WO 00/70655에 개시되어 있다.The skilled artisan knows how to select suitable materials (eg, based on electrochemical research). Materials suitable for individual layers are known to the skilled person and are disclosed, for example, in WO 00/70655.
또한, 본 발명의 OLED에 사용되는 층의 일부를 표면-처리하여 전하 캐리어 수송의 효율을 증가시키는 것이 가능하다. 언급된 각각의 층을 위한 물질의 선택은 바람직하게는 높은 효율 및 수명을 갖는 OLED를 획득하는 것에 따라 결정된다.In addition, it is possible to increase the efficiency of charge carrier transport by surface-treating a part of the layer used in the OLED of the present invention. The choice of material for each layer mentioned is preferably determined by obtaining an OLED with high efficiency and lifetime.
본 발명의 OLED는 통상의 기술자에게 공지된 방법에 의해 제조될 수 있다. 일반적으로, 본 발명의 OLED는 개별 층의 적합한 기판 상으로의 연속 증착에 의해 제조된다. 적합한 기판은, 예를 들어 유리, 무기 반도체 또는 중합체 필름이다. 증착을 위해, 통상적인 기술, 예컨대 열 증발, 화학 증착 (CVD), 물리 증착 (PVD) 등을 사용하는 것이 가능하다. 대안적인 방법에서, OLED의 유기 층은 통상의 기술자에게 공지된 코팅 기술을 사용하여 적합한 용매 중의 용액 또는 분산액으로부터 적용될 수 있다.The OLED of the present invention can be produced by methods known to those skilled in the art. In general, the OLEDs of the present invention are produced by continuous deposition of individual layers onto suitable substrates. Suitable substrates are, for example, glass, inorganic semiconductors or polymer films. For deposition, it is possible to use conventional techniques such as thermal evaporation, chemical vapor deposition (CVD), physical vapor deposition (PVD), and the like. In an alternative method, the organic layer of the OLED can be applied from a solution or dispersion in a suitable solvent using coating techniques known to those skilled in the art.
일반적으로, 상이한 층은 하기 두께를 갖는다: 애노드 (1) 50 내지 500 nm, 바람직하게는 100 내지 200 nm; 정공-전도성 층 (2) 5 내지 100 nm, 바람직하게는 20 내지 80 nm, 발광 층 (3) 1 내지 100 nm, 바람직하게는 10 내지 80 nm, 정공/여기자 차단 층 (4) 2 내지 100 nm, 바람직하게는 5 내지 50 nm, 전자-전도성 층 (5) 5 내지 100 nm, 바람직하게는 20 내지 80 nm, 캐소드 (6) 20 내지 1000 nm, 바람직하게는 30 내지 500 nm. 캐소드와 관련하여 본 발명의 OLED에서 정공 및 전자의 재조합 구역의 상대적 위치 및 이에 따른 OLED의 발광 스펙트럼은, 다른 요인 중에서, 각각의 층의 상대적 두께에 의해 영향을 받을 수 있다. 이는 전자 수송 층의 두께가 바람직하게는, 재조합 구역의 위치가 다이오드의 광학 공명기 특성 및 이에 따른 방출체의 발광 파장에 부합되도록 선택되어야 함을 의미한다. OLED에서 개별 층의 층 두께의 비는 사용되는 물질에 따라 달라진다. 사용되는 임의의 추가 층의 층 두께는 통상의 기술자에게 공지되어 있다. 전자-전도성 층 및/또는 정공-전도성 층이 이들이 전기적으로 도핑되는 경우에 명시된 층 두께보다 큰 두께를 갖는 것이 가능하다.In general, the different layers have the following thickness: anode (1) 50 to 500 nm, preferably 100 to 200 nm; Hole-conductive layer (2) 5 to 100 nm, preferably 20 to 80 nm, luminescent layer (3) 1 to 100 nm, preferably 10 to 80 nm, hole/exciter blocking layer (4) 2 to 100 nm , Preferably 5 to 50 nm, electron-conducting layer (5) 5 to 100 nm, preferably 20 to 80 nm, cathode (6) 20 to 1000 nm, preferably 30 to 500 nm. The relative position of the recombination zones of holes and electrons in the OLED of the present invention in relation to the cathode and hence the emission spectrum of the OLED, among other factors, can be influenced by the relative thickness of each layer. This means that the thickness of the electron transport layer should preferably be selected so that the location of the recombination zone matches the optical resonator properties of the diode and thus the emission wavelength of the emitter. The ratio of the layer thickness of the individual layers in the OLED depends on the material used. The layer thickness of any additional layer used is known to those skilled in the art. It is possible that the electron-conducting layer and/or the hole-conducting layer have a thickness greater than the layer thickness specified when they are electrically doped.
OLED의 적어도 1개의 층에, 바람직하게는 발광 층에서 (바람직하게는 매트릭스 물질로서) 및/또는 정공/여기자 차단 층에 화학식 (I)의 화합물을 사용하는 것은 높은 효율 및 낮은 사용 및 작동 전압을 갖는 OLED가 획득되는 것을 가능하게 한다. 빈번하게, 화학식 (I)의 화합물의 사용에 의해 획득된 OLED는 추가로 높은 수명을 갖는다. OLED의 효율은 OLED의 다른 층을 최적화함으로써 추가로 개선될 수 있다. 예를 들어, 고-효율 캐소드, 예컨대 Ca 또는 Ba는, 적절한 경우에 LiF의 중간 층과 조합하여 사용될 수 있다. 작동 전압의 감소 또는 양자 효율의 증가를 유발하는 성형된 기판 및 신규 정공-수송 물질은 마찬가지로 본 발명의 OLED에서 사용가능하다. 더욱이, 상이한 층의 에너지 수준을 조정하고 전계발광을 용이하게 하기 위해 추가의 층이 OLED에 존재할 수 있다.The use of a compound of formula (I) in at least one layer of the OLED, preferably in the light emitting layer (preferably as a matrix material) and/or in the hole/exciter blocking layer, results in high efficiency and low use and operating voltage. Having the OLED makes it possible to obtain. Frequently, OLEDs obtained by the use of compounds of formula (I) have a further high lifetime. The efficiency of the OLED can be further improved by optimizing the other layers of the OLED. For example, high-efficiency cathodes, such as Ca or Ba, can be used in combination with an intermediate layer of LiF where appropriate. Molded substrates and novel hole-transport materials that cause a reduction in operating voltage or an increase in quantum efficiency are likewise usable in the inventive OLEDs. Moreover, additional layers may be present in the OLED to adjust the energy levels of the different layers and to facilitate electroluminescence.
OLED는 적어도 1개의 제2 발광 층을 추가로 포함할 수 있다. OLED의 전체 방출은 적어도 2개의 발광 층의 방출로 구성될 수 있고, 또한 백색 광을 포함할 수 있다.The OLED may further include at least one second light emitting layer. The total emission of the OLED may consist of the emission of at least two emitting layers, and may also include white light.
OLED는 전계발광이 유용한 모든 장치에 사용될 수 있다. 적합한 장치는 바람직하게는 고정식 및 이동식 시각 디스플레이 장치 및 조명 장치로부터 선택된다. 고정식 시각 디스플레이 장치는, 예를 들어 컴퓨터, 텔레비전의 시각 디스플레이 장치, 프린터, 주방용 기구 및 광고 패널, 조명 및 안내 패널에서의 시각 디스플레이 장치이다. 이동식 시각 디스플레이 장치는, 예를 들어 휴대폰, 테블릿 PC, 휴대용 컴퓨터, 디지털 카메라, MP3 플레이어, 차량 및 버스와 기차의 행선지 디스플레이에서의 시각 디스플레이 장치이다. 본 발명의 OLED가 사용될 수 있는 추가의 장치는, 예를 들어 키보드; 의류 품목; 가구; 벽지이다. 또한, 본 발명은 적어도 1개의 본 발명의 유기 발광 다이오드 또는 적어도 1개의 본 발명의 발광 층을 포함하는, 고정식 시각 디스플레이 장치, 예컨대 컴퓨터, 텔레비전의 시각 디스플레이 장치, 프린터, 주방용 기기 및 광고판, 조명, 안내판에서의 시각 디스플레이 장치, 및 이동식 시각 디스플레이 장치, 예컨대 휴대폰, 테블릿 PC, 휴대용 컴퓨터, 디지털 카메라, MP3 플레이어, 차량 및 버스와 기차의 행선지 디스플레이에서의 시각 디스플레이 장치; 조명 장치; 키보드; 의류 품목; 가구; 벽지로 이루어진 군으로부터 선택된 장치에 관한 것이다.OLEDs can be used in any device where electroluminescence is useful. Suitable devices are preferably selected from fixed and mobile visual display devices and lighting devices. Stationary visual display devices are, for example, visual display devices for computers, televisions, printers, kitchen utensils and advertising panels, and visual display devices in lighting and guidance panels. The mobile visual display device is, for example, a visual display device in a mobile phone, a tablet PC, a portable computer, a digital camera, an MP3 player, a vehicle, and a destination display of buses and trains. Additional devices in which the OLED of the present invention can be used include, for example, a keyboard; Clothing items; furniture; It is wallpaper. In addition, the present invention includes at least one organic light emitting diode of the present invention or at least one light emitting layer of the present invention, a fixed visual display device, such as a computer, television visual display device, printers, kitchen appliances and billboards, lighting, A visual display device in a guide plate, and a mobile visual display device, such as a mobile phone, a tablet PC, a portable computer, a digital camera, an MP3 player, a visual display device in vehicles and destination displays of buses and trains; Lighting devices; keyboard; Clothing items; furniture; It relates to a device selected from the group consisting of wallpaper.
하기 실시예는 오직 예시적 목적만을 위해 포함되며, 청구범위의 범주를 제한하지 않는다. 달리 언급되지 않는 한, 모든 부 및 백분율은 중량 기준이다.The following examples are included for illustrative purposes only and do not limit the scope of the claims. All parts and percentages are by weight, unless stated otherwise.
실시예Example
실시예 1Example 1
a) DMF 200 ml 중 1,3-디브로모-5-플루오로-벤젠 20.0 g (78.8 mmol), 6H-벤즈이미다졸로[1,2-a]벤즈이미다졸 16.3 g (78.8 mmol) 및 탄산칼륨 43.5 g (0.315 mmol)을 170℃에서 17시간 동안 교반하였다. 반응 혼합물을 뜨거운 채로 여과하고, 모액으로부터의 침전물을 냉각 후에 여과하였다. 생성물을 물 및 에탄올로 세척하고, 디에틸 에테르 및 에탄올과 함께 달였다. 수율 21.2 g (61%).a) 20.0 g (78.8 mmol) of 1,3-dibromo-5-fluoro-benzene in 200 ml DMF, 16.3 g (78.8 mmol) of 6H-benzimidazolo[1,2-a]benzimidazole and Potassium carbonate 43.5 g (0.315 mmol) was stirred at 170° C. for 17 hours. The reaction mixture was filtered hot, and the precipitate from the mother liquor was filtered after cooling. The product was washed with water and ethanol and decanted with diethyl ether and ethanol. Yield 21.2 g (61%).
b) 실시예 1a)의 생성물 3.31 g (7.5 mmol), 4,4,5,5-테트라메틸-2-(4,4,5,5-테트라메틸-1,3,2-디옥사보롤란-2-일)-1,3,2-디옥사보롤란 4.76 g (18.75 mmol) 및 아세트산칼륨 5.89 g (60 mmol)의 혼합물을 배기시키고, 아르곤으로 5회 플러싱하였다. DMF 40 ml를 첨가하고, 혼합물을 배기시키고, 플러싱하였다. 1,1'-비스(디페닐포스피노)페로센)디클로로팔라듐(II) 428.7 mg (0.525 mmol)을 아르곤 하에 첨가하였다. 반응 혼합물을 65℃로 가열하고, 3.5시간 동안 교반한 다음, 실온으로 냉각시키고, 용매를 감압 하에 제거하였다. 잔류물을 물 120 ml 및 tert-부틸 메틸 에테르 (TBME) 120 ml 중에 용해시키고, 수 분 동안 교반하고, 여과하였다. 상을 분리하고, H2O 상을 TBME로 추출하였다. 유기 상을 건조시키고, 증발시킨 다음, 뜨거운 이소프로판올 50 ml와 함께 15분 동안 교반하였다. 현탁액을 여과하고, 잔류물을 이소프로판올로 세척하고, 건조시켜 2.29 g을 수득하였다. 여과물을 증발시키고, 이소프로판올 중에서 결정화하여 319 mg을 수득하였다. 전체 수율: 2.61 g (65%).b) 3.31 g (7.5 mmol) of the product of Example 1a), 4,4,5,5-tetramethyl-2-(4,4,5,5-tetramethyl-1,3,2-dioxaborolane -2-yl) A mixture of 4.76 g (18.75 mmol) of 1,3,2-dioxaborolane and 5.89 g (60 mmol) of potassium acetate was evacuated and flushed 5 times with argon. 40 ml of DMF was added, the mixture was evacuated and flushed. 428.7 mg (0.525 mmol) of 1,1'-bis(diphenylphosphino)ferrocene)dichloropalladium(II) was added under argon. The reaction mixture was heated to 65° C., stirred for 3.5 hours, then cooled to room temperature, and the solvent was removed under reduced pressure. The residue was dissolved in 120 ml water and 120 ml tert-butyl methyl ether (TBME), stirred for several minutes and filtered. The phases were separated and the H 2 O phase was extracted with TBME. The organic phase was dried, evaporated and stirred with 50 ml of hot isopropanol for 15 minutes. The suspension was filtered, and the residue was washed with isopropanol and dried to give 2.29 g. The filtrate was evaporated and crystallized in isopropanol to give 319 mg. Total yield: 2.61 g (65%).
c) 문헌 [T. Jensen in Angew. Chem. Int. Ed. 47 (2008) 888]에 기재된 절차와 유사하게 3-클로로-피리딘으로부터 출발하여 3-클로로-4-아이오도-피리딘을 제조하였다 (수율: 52.9%).c) Literature [T. Jensen in Angew. Chem. Int. Ed. 47 (2008) 888, similar to the procedure described in 3-chloro-4-iodo-pyridine was prepared starting from 3-chloro-pyridine (yield: 52.9%).
d) 3-클로로-4-아이오도-피리딘 11.1g (46.35 mmol), 5-브로모-2-메톡시-페닐보론산 10.17 g (44.03 mmol), 탄산칼륨 32.67 g (236.39 mmol), 톨루엔 350 ml, 에탄올 160 ml 및 물 88 ml를 혼합하고, 배기시키고, 아르곤으로 4회 플러싱하였다. 이어서, 테트라키스 트리페닐 포스핀 팔라듐 2.68 g (2.31 mmol)을 첨가하고, 다시 배기시키고, 아르곤으로 4회 플러싱하였다. 생성된 투명한 혼합물을 교반하면서 3시간 동안 가열 환류시킨 다음, 실온으로 냉각시켰다. 상을 분리하고, 수성 상을 톨루엔 (각각 200 ml)으로 2회 추출하였다. 합한 유기 상을 물 (각각 100 ml)로 3회 세척하고, 황산마그네슘으로 건조시키고, 여과하고, 용매를 회전증발기 상에서 증발시켰다. 조 생성물 (16.07 g)을 용리액으로서 헥산/에틸 아세테이트를 사용하는 플래시 칼럼크로마토그래피에 의해 정제하여 4-(4-브로모-2-메톡시-페닐)-3-클로로-피리딘 10.94 g (83.2%)을 무색 오일로서 수득하였으며, 이는 정치 시에 고체화되었다.d) 3-chloro-4-iodo-pyridine 11.1 g (46.35 mmol), 5-bromo-2-methoxy-phenylboronic acid 10.17 g (44.03 mmol), potassium carbonate 32.67 g (236.39 mmol), toluene 350 ml, ethanol 160 ml and water 88 ml were mixed, vented and flushed with argon 4 times. Then, 2.68 g (2.31 mmol) of tetrakis triphenyl phosphine palladium was added, vented again, and flushed with argon 4 times. The resulting transparent mixture was heated to reflux for 3 hours with stirring, then cooled to room temperature. The phases were separated and the aqueous phase was extracted twice with toluene (200 ml each). The combined organic phase was washed 3 times with water (100 ml each), dried over magnesium sulfate, filtered and the solvent was evaporated on a rotary evaporator. The crude product (16.07 g) was purified by flash column chromatography using hexane/ethyl acetate as eluent to give 10.94 g (83.2%) of 4-(4-bromo-2-methoxy-phenyl)-3-chloro-pyridine. ) As a colorless oil, which solidified upon standing.
e) 4-(4-브로모-2-메톡시-페닐)-3-클로로-피리딘 10.94 g (36.64 mmol)을 무수 디클로로메탄 200 ml 중에 용해시켰다. 20분 내에, 수조를 사용하여 온도를 실온에서 유지하면서 디클로로메탄 중 1M 삼브로민화붕소 용액 145.9 ml (145.9 mmol)를 시린지를 사용하여 첨가하였다. 냉각을 제거하고, 용액을 실온에서 18시간 동안 교반하였다. 이어서, 물 500 ml를 한 방울씩 첨가하였다. 발열 반응이 발생하고, 혼합물이 환류되기 시작하였다. 혼합물을 30분 동안 교반한 다음, 완충액 200 ml (pH = 7)에 첨가하였다. pH 7에 도달할 때까지 2N NaOH 용액을 첨가하였다. 이어서, 에틸 아세테이트 500 ml를 첨가하였다. 상을 분리하고, 수성 상을 에틸 아세테이트 (각각 250 ml)로 2회 추출하였다. 합한 유기 상을 물 (각각 100 ml)로 3회 세척하고, 황산마그네슘으로 건조시키고, 여과하고, 용매를 회전증발기 상에서 100 ml의 부피까지 증발시켰다. 빙조를 사용하여 현탁액을 0℃로 냉각시키고, 여과하고, 잔류물을 빙냉 에틸 아세테이트 (각각 5 ml)로 3회 세척하였다. 생성물을 50℃ / 125 mbar에서 밤새 건조시켜 5-브로모-2-(3-클로로-4-피리딜)페놀 8.99 g (86.2%)을 수득하였다.e) 10.94 g (36.64 mmol) of 4-(4-bromo-2-methoxy-phenyl)-3-chloro-pyridine was dissolved in 200 ml of anhydrous dichloromethane. Within 20 minutes, 145.9 ml (145.9 mmol) of a 1M boron tribromide solution in dichloromethane was added using a syringe while maintaining the temperature at room temperature using a water bath. The cooling was removed and the solution was stirred at room temperature for 18 hours. Then, 500 ml of water was added dropwise. An exothermic reaction occurred and the mixture began to reflux. The mixture was stirred for 30 minutes, then added to 200 ml of buffer (pH = 7). 2N NaOH solution was added until pH 7 was reached. Then, 500 ml of ethyl acetate was added. The phases were separated and the aqueous phase was extracted twice with ethyl acetate (250 ml each). The combined organic phase was washed 3 times with water (100 ml each), dried over magnesium sulfate, filtered and the solvent was evaporated on a rotary evaporator to a volume of 100 ml. The suspension was cooled to 0° C. using an ice bath, filtered and the residue washed three times with ice cold ethyl acetate (5 ml each). The product was dried overnight at 50°C/125 mbar to give 8.99 g (86.2%) of 5-bromo-2-(3-chloro-4-pyridyl)phenol.
f) 문헌 [J. Org. Chem. 73 (7) 2951 (2008) (J. Liu)]에 기재된 절차와 유사하게 구리(I)-티오펜-2-카르복실레이트 (CuTC)를 사용하여 5-브로모-2-(3-클로로-4-피리딜)페놀 7.85 g (27.59 mmol)을 6-브로모-4a,4b,8a,9a-테트라히드로벤조푸로[2,3-c]피리딘으로 고리화시키고, 용리액으로서 헥산 /에틸 아세테이트 2:1을 사용하는 플래쉬 크로마토그래피 후에 54.1% 수율을 얻었다.f) [J. Org. Chem. Similar to the procedure described in 73 (7) 2951 (2008) (J. Liu)], 5-bromo-2-(3-chloro using copper(I)-thiophene-2-carboxylate (CuTC). 7.85 g (27.59 mmol) of -4-pyridyl)phenol are cyclized with 6-bromo-4a,4b,8a,9a-tetrahydrobenzofuro[2,3-c]pyridine and hexane/ethyl acetate as eluent 54.1% yield was obtained after flash chromatography using 2:1.
g) 실시예 1b)의 생성물 401.4 mg (0.75 mmol) 및 실시예 1f)의 생성물465.1 mg (1.875 mmol)의 혼합물을 배기시키고, 아르곤으로 3회 플러싱하였다. 테트라히드로푸란 6 ml (THF)를 첨가하였다. K3PO4 955.2 mg (4.5 mmol) 및 물 25 ml를 분리형 플라스크에서 25분 동안 아르곤으로 버블링하였다. 트리스 t-부틸포스포늄 테트라플루오로보레이트 13.1 mg (0.045 mmol) 및 Pd2(dba)3 20.6 mg (0.023 mmol)을 THF 중 출발 물질의 혼합물에 첨가하고, 3분 동안 아르곤으로 버블링한 다음, 50℃로 가열하였다. K3PO4 용액을 시린지를 사용하여 한 번에 첨가하고, 반응 혼합물을 75℃의 조 온도에서 4시간 동안 가열하였다. 반응 혼합물을 실온으로 냉각시키고, 물 20 ml를 첨가하였다. THF를 증발시키고, 반응 혼합물을 여과하고, 잔류물을 물 및 메탄올로 세척하고, 건조시켰다. 조 생성물을 30분 동안 CHCl3 100 ml 중에서 교반하고, 하이플로(Hyflo)를 통해 여과하고, CHCl3으로 세척하였다. 여과물을 증발시킨 다음, 뜨거운 CHCl3 8 ml 중에서 교반하고, 여과하고, 잔류물을 CHCl3으로 세척하고, 건조시켰다. 수율: 407.6 mg (88%)g) A mixture of 401.4 mg (0.75 mmol) of the product of Example 1b) and 465.1 mg (1.875 mmol) of the product of Example 1f was evacuated and flushed three times with argon. Tetrahydrofuran 6 ml (THF) was added. 955.2 mg (4.5 mmol) of K 3 PO 4 and 25 ml of water were bubbled with argon in a separate flask for 25 minutes. Tris t-butylphosphonium tetrafluoroborate 13.1 mg (0.045 mmol) and Pd 2 (dba) 3 20.6 mg (0.023 mmol) were added to the mixture of starting materials in THF, bubbling with argon for 3 minutes, Heated to 50°C. The K 3 PO 4 solution was added at once using a syringe, and the reaction mixture was heated at a bath temperature of 75° C. for 4 hours. The reaction mixture was cooled to room temperature, and 20 ml of water was added. The THF was evaporated, the reaction mixture was filtered, and the residue was washed with water and methanol and dried. The crude product was stirred in CHCl 3 100 ml for 30 minutes, filtered through hyflo (Hyflo) and washed with CHCl 3. The filtrate was evaporated, then stirred in 8 ml of hot CHCl 3 , filtered, and the residue was washed with CHCl 3 and dried. Yield: 407.6 mg (88%)
실시예 2Example 2
a) 1-브로모-3-아이오도-벤젠 7.78 g (25.0 mmol), 탄산세슘 16.3 g (50.0 mmol), 아이오딘화구리 (I) 1.24 g (6.50 mmol) 및 L-프롤린 1.50 g (13.0 mmol)을 디메틸술폭시드 100 ml (DMSO) 중 5H-벤즈이미다조[1,2-a]벤즈이미다졸 5.18 g (25.0 mmol)에 질소 하에 첨가하였다. 반응 혼합물을 100℃에서 18시간 동안 교반한 다음, 물에 부었다. 수상을 디클로로메탄으로 추출하고, 황산마그네슘으로 건조시켰다. 용매를 증류시켰다. 톨루엔으로 실리카 겔 상에서 칼럼 크로마토그래피하여 생성물을 8.35 g (92%)의 수율로 수득하였다.a) 1-bromo-3-iodo-benzene 7.78 g (25.0 mmol), cesium carbonate 16.3 g (50.0 mmol), copper iodide (I) 1.24 g (6.50 mmol) and L-proline 1.50 g (13.0) mmol) was added under nitrogen to 5.18 g (25.0 mmol) of 5H-benzimidazole[1,2-a]benzimidazole in 100 ml dimethyl sulfoxide (DMSO). The reaction mixture was stirred at 100° C. for 18 hours, then poured into water. The aqueous phase was extracted with dichloromethane and dried over magnesium sulfate. The solvent was distilled off. Column chromatography on silica gel with toluene gave the product in a yield of 8.35 g (92%).
b) 실시예 2a)의 생성물 1.0 g (2.73 mmol), 4,4,5,5-테트라메틸-2-(4,4,5,5-테트라메틸-1,3,2-디옥사보롤란-2-일)-1,3,2-디옥사보롤란 831.2 mg (3.27 mmol), 아세트산칼륨 1.61 g (16 mmol) 및 DMF 25 ml를 배기시키고, 아르곤으로 5회 플러싱하였다. 1,1'-비스(디페닐포스피노)페로센)디클로로팔라듐(II) 111.4 mg (0.136 mmol)을 첨가하고, 반응 혼합물을 배기시키고, 아르곤으로 5회 플러싱하였다. 반응 혼합물을 60℃에서 20시간 동안 교반하고, 실온으로 냉각시킨 다음, 감압 하에 증발시켰다. 물 50 ml, TBME 50 ml 및 물 중 1% NaCN의 용액 3 ml를 첨가하고, 혼합물을 30분 동안 교반하고, 여과하고, 에틸 아세테이트 100 ml로 세척하였다. 상을 분리하고, 수상을 에틸 아세테이트로 추출하고, 유기 상을 건조시키고, 증발시켰다. 수율: 0.8 g (72%)b) 1.0 g (2.73 mmol) of the product of Example 2a), 4,4,5,5-tetramethyl-2-(4,4,5,5-tetramethyl-1,3,2-dioxaborolane -2-yl)-1,3,2-dioxaborolan 831.2 mg (3.27 mmol), potassium acetate 1.61 g (16 mmol) and 25 ml of DMF were evacuated and flushed 5 times with argon. 111.4 mg (0.136 mmol) of 1,1'-bis(diphenylphosphino)ferrocene)dichloropalladium(II) was added, the reaction mixture was evacuated and flushed 5 times with argon. The reaction mixture was stirred at 60° C. for 20 hours, cooled to room temperature, and then evaporated under reduced pressure. 50 ml of water, 50 ml of TBME and 3 ml of a solution of 1% NaCN in water were added, and the mixture was stirred for 30 minutes, filtered and washed with 100 ml of ethyl acetate. The phases were separated, the aqueous phase was extracted with ethyl acetate, and the organic phase was dried and evaporated. Yield: 0.8 g (72%)
c) 2-아미노-3-아이오도-5-브로모피리딘 13.92 g (46.56 mmol), 5-브로모-2-메톡시-페닐보론산 11.71 g (50.75 mmol), 탄산칼륨 32.82 g (237.44 mmol), 톨루엔 700 ml, 에탄올 280 ml 및 물 175 ml를 혼합하고, 배기시키고, 아르곤으로 4회 플러싱하였다. 이어서, 테트라키스 트리페닐 포스핀 팔라듐 5.38 g (4.66 mmol)을 첨가하였다. 혼합물을 교반하면서 2.5시간 동안 가열 환류시킨 다음, 실온으로 냉각시켰다. 상을 분리하고, 수성 상을 톨루엔 (각각 250 ml)으로 2회 추출하였다. 합한 유기 상을 물 (각각 100 ml)로 3회 세척하고, 황산마그네슘으로 건조시키고, 여과하고, 용매를 회전증발기 상에서 증발시켰다. 조 생성물 (16.8 g)을 용리액으로서 헵탄/에틸 아세테이트를 사용하는 플래쉬 크로마토그래피에 의해 정제하여 5-브로모-3-(5-브로모-2-메톡시페닐)피리딘-2-아민 12.4 g (74%)을 수득하였다.c) 13.92 g (46.56 mmol) of 2-amino-3-iodo-5-bromopyridine, 11.71 g (50.75 mmol) of 5-bromo-2-methoxy-phenylboronic acid, 32.82 g of potassium carbonate (237.44 mmol) ), 700 ml of toluene, 280 ml of ethanol and 175 ml of water were mixed, vented and flushed 4 times with argon. Then, 5.38 g (4.66 mmol) of tetrakis triphenyl phosphine palladium was added. The mixture was heated to reflux for 2.5 hours with stirring, then cooled to room temperature. The phases were separated and the aqueous phase was extracted twice with toluene (250 ml each). The combined organic phase was washed 3 times with water (100 ml each), dried over magnesium sulfate, filtered and the solvent was evaporated on a rotary evaporator. The crude product (16.8 g) was purified by flash chromatography using heptane/ethyl acetate as eluent to 12.4 g 5-bromo-3-(5-bromo-2-methoxyphenyl)pyridin-2-amine ( 74%).
d) THF 170 ml 및 빙초산 430 ml 중 5-브로모-3-(5-브로모-2-메톡시페닐)피리딘-2-아민 12.4 g (35 mmol)의 용액을 0℃로 냉각시키고, tert-부틸 니트라이트 7.14 g (69 mmol)를 적가하였다. 반응 혼합물을 0℃에서 밤새 교반하고, 실온으로 가온하고, 빙수 800 ml에 붓고, 1시간 동안 교반하였다. 황색 현탁액을 여과하고, 빙수로 세척하고, 건조시켜 순수한 생성물 8.5 g (75%)을 수득하였다.d) A solution of 12.4 g (35 mmol) of 5-bromo-3-(5-bromo-2-methoxyphenyl)pyridin-2-amine in 170 ml THF and 430 ml glacial acetic acid was cooled to 0° C., tert -Butyl nitrite 7.14 g (69 mmol) was added dropwise. The reaction mixture was stirred overnight at 0° C., warmed to room temperature, poured into 800 ml of ice water and stirred for 1 hour. The yellow suspension was filtered, washed with ice water and dried to give 8.5 g (75%) of pure product.
e) 실시예 2d)의 생성물 267.3 mg (0.818 mmol), 실시예 2b)의 생성물 702.7 mg (1.72 mmol), K2CO3 576.2 mg (4.17 mmol), 톨루엔 50 ml, 에탄올 25 ml 및 물 11 ml의 혼합물을 배기시키고, 아르곤으로 5회 플러싱하였다. 테트라키스 트리페닐 포스핀 팔라듐 47.2 mg (0.041 mmol)을 첨가하고, 반응 혼합물을 18시간 동안 가열 환류시켰다. 물 중 NaCN의 2% 용액 10 ml를 첨가하고, 반응 혼합물을 실온으로 냉각시켰다. 물 50 ml 및 톨루엔 50 ml를 첨가하고, 현탁액을 15분 동안 교반하고, 여과하고, 톨루엔/물로 세척하고, 건조시켰다. 수율: 황색 결정 330 mg (55%).e) 267.3 mg (0.818 mmol) of the product of Example 2d), 702.7 mg (1.72 mmol) of the product of Example 2b), 576.2 mg (4.17 mmol) of K 2 CO 3 , 50 ml of toluene, 25 ml of ethanol and 11 ml of water The mixture of was evacuated and flushed 5 times with argon. Tetrakis triphenyl phosphine palladium 47.2 mg (0.041 mmol) was added and the reaction mixture was heated to reflux for 18 hours. 10 ml of a 2% solution of NaCN in water was added and the reaction mixture was cooled to room temperature. 50 ml of water and 50 ml of toluene were added, and the suspension was stirred for 15 minutes, filtered, washed with toluene/water and dried. Yield: 330 mg (55%) of yellow crystals.
적용 실시예 1Application Example 1
애노드로서 사용된 ITO 기판을 먼저 초음파 조에서 아세톤/이소프로판올 혼합물로 세정하였다. 임의의 가능한 유기 잔류물을 제거하기 위해, 기판을 추가 25분 동안 오존 오븐에서 연속 오존 유동에 노출시켰다. 이 처리는 또한 ITO의 정공 주입 특성을 개선하였다. 이어서, 플렉스코어® OC AJ20-1000 (플렉스트로닉스 인크.(Plextronics Inc.)로부터 상업적으로 입수가능함)을 스핀-코팅하고 건조시켜 정공 주입 층 (~40 nm)을 형성하였다.The ITO substrate used as the anode was first cleaned with an acetone/isopropanol mixture in an ultrasonic bath. To remove any possible organic residues, the substrate was exposed to a continuous ozone flow in an ozone oven for an additional 25 minutes. This treatment also improved the hole injection properties of ITO. The FlexCore® OC AJ20-1000 (commercially available from Flextronics Inc.) was then spin-coated and dried to form a hole injection layer (~40 nm).
그 후에, 하기 명시된 유기 물질을 약 10-7 - 10-9 mbar에서 대략 0.5-5 nm/분의 속도로 증착에 의해 청결한 기판에 적용하였다. 정공 수송 및 여기자 차단제로서, 을 20 nm의 두께로 기판에 적용하였으며, 여기서 처음 10 nm를 MoOx (~10%)로 도핑하여 전도성을 개선하였다.It was applied to the clean substrate by evaporation to approximately 0.5-5 nm / min at 10 -9 mbar - and then, to the specified organic material of about 10-7. As a hole transport and exciton blocker, Was applied to the substrate with a thickness of 20 nm, where the first 10 nm was doped with MoO x (~10%) to improve conductivity.
후속적으로, 방출체 화합물 10 중량% 및 화합물 90 중량%의 혼합물을 40 nm의 두께로 증착에 의해 적용하였다. 이어서, 화합물 (E-57)을 차단제로서 5 nm 두께로 증착시켰다. 그 후에, 50 중량% 및 50%로 이루어진 20 nm 두께의 전자 수송 층을 증착시켰다. 최종적으로 2 nm KF 층이 전자 주입 층으로서 작용하였으며, 100 nm-두께의 Al 전극으로 장치가 완성되었다.Subsequently, the emitter compound 10% by weight and compound 90% by weight of the mixture was applied by vapor deposition to a thickness of 40 nm. Subsequently, compound (E-57) was deposited as a blocking agent to a thickness of 5 nm. After that, 50% by weight and A 20 nm thick electron transport layer of 50% was deposited. Finally, a 2 nm KF layer served as the electron injection layer, and the device was completed with a 100 nm-thick Al electrode.
모든 제조 부품을 불활성 질소 분위기 하에 유리 덮개 및 게터로 밀봉하였다.All manufactured parts were sealed with a glass lid and getter under an inert nitrogen atmosphere.
OLED를 특성화하기 위해, 전계발광 스펙트럼을 다양한 전류 및 전압에서 기록하였다. 또한, 전류-전압 특성을 방출된 광 출력과 함께 측정하였다. 광 출력을 광도계로 보정함으로써 광도측정 파라미터로 전환할 수 있었다.To characterize the OLED, electroluminescence spectra were recorded at various currents and voltages. In addition, the current-voltage characteristics were measured along with the emitted light output. By calibrating the light output with a photometer, it was possible to convert to photometric parameters.
1) 외부 양자 효율 (EQE)은 물질 또는 장치로부터 방출되는 발생된 광자의 # / 이를 통해 흐르는 전자의 #이다. 1) External quantum efficiency (EQE) is # of generated photons emitted from a substance or device / # of electrons flowing through it.
적용 실시예 2Application Example 2
화합물 92 중량% 및 화합물 8 중량%를 약 10-7 -10-9 mbar에서 대략 0.5-5 nm/분의 속도로 증착에 의해 80 nm의 두께로 석영 기판에 적용하였다.compound 92% by weight and compound 8% by weight was applied to the quartz substrate to a thickness of 80 nm by deposition at a rate of approximately 0.5-5 nm/min at about 10 -7 -10 -9 mbar.
PL 스펙트럼 및 PL 양자 효율을 370 nm의 여기 파장에서 절대 양자-수율 측정 시스템 "퀀타우루스(Quantaurus)" (하마마츠(Hamamatsu), 일본)를 사용하여 실온에서 측정하였다.PL spectra and PL quantum efficiency were measured at room temperature using an absolute quantum-yield measurement system “Quantaurus” (Hamamatsu, Japan) at an excitation wavelength of 370 nm.
Claims (15)
(II)
상기 식에서,
B1은 N 또는 CR81이고,
B2는 N 또는 CR82이고,
B3은 N 또는 CR83이고,
B4는 N 또는 CR84이고,
B5는 N 또는 CR85이고,
B6은 N 또는 CR86이고,
B7은 N 또는 CR87이고,
B8은 N 또는 CR88이고, 여기서 R81, R82, R83, R84, R85, R86, R87 및 R88은 서로 독립적으로 H, 임의로 E에 의해 치환될 수 있고/거나 D가 개재될 수 있는 C1-C25알킬 기; G에 의해 임의로 치환될 수 있는 C6-C24아릴 기, G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기; 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-R16 또는 -(A1)o-(A2)p-(A3)q-(A4)r-X1의 기이고,
o는 0 또는 1이고, p는 0 또는 1이고, q는 0 또는 1이고, r은 0 또는 1이고,
A1, A2, A3 및 A4는 서로 독립적으로 G에 의해 임의로 치환될 수 있는 C6-C24아릴렌 기, 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴렌 기이고;
R16은 -NR10R11, 또는 -Si(R12)(R13)(R14), G에 의해 임의로 치환될 수 있는 C6-C24아릴 기; 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기이고;
R10 및 R11은 서로 독립적으로 G에 의해 임의로 치환될 수 있는 C6-C24아릴 기; 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기이고;
R12, R13 및 R14는 서로 독립적으로 임의로 E에 의해 치환될 수 있고/거나 D가 개재될 수 있는 C1-C25알킬 기; G에 의해 임의로 치환될 수 있는 C6-C24아릴 기; 또는 G에 의해 임의로 치환될 수 있는 C2-C30헤테로아릴 기이고;
D는 -CO-, -COO-, -S-, -SO-, -SO2-, -O-, -NR65-, -SiR70R71-, -POR72-, -CR63=CR64- 또는 -C≡C-이고,
E는 -OR69, -SR69, -NR65R66, -COR68, -COOR67, -CONR65R66, -CN 또는 F이고,
G는 E, 또는 C1-C18알킬 기, C6-C24아릴 기, 또는 F, C1-C18알킬 또는 O가 개재된 C1-C18알킬에 의해 치환된 C6-C24아릴 기; C2-C30헤테로아릴 기, 또는 F, C1-C18알킬 또는 O가 개재된 C1-C18알킬에 의해 치환된 C2-C30헤테로아릴 기이고;
R63 및 R64는 서로 독립적으로 H, C6-C18아릴; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴; C1-C18알킬; 또는 -O-가 개재된 C1-C18알킬이고;
R65 및 R66은 서로 독립적으로 C6-C18아릴 기; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴; C1-C18알킬 기; 또는 -O-가 개재된 C1-C18알킬 기이거나; 또는
R65 및 R66은 함께 5 또는 6원 고리를 형성하고,
R67은 C6-C18아릴 기; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴 기; C1-C18알킬 기; 또는 -O-가 개재된 C1-C18알킬 기이고,
R68은 H; C6-C18아릴 기; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴 기; C1-C18알킬 기; 또는 -O-가 개재된 C1-C18알킬 기이고,
R69는 C6-C18아릴; C1-C18알킬 또는 C1-C18알콕시에 의해 치환된 C6-C18아릴; C1-C18알킬 기; 또는 -O-가 개재된 C1-C18알킬 기이고,
R70 및 R71은 서로 독립적으로 C1-C18알킬 기, C6-C18아릴 기, 또는 C1-C18알킬에 의해 치환된 C6-C18아릴 기이고,
R72는 C1-C18알킬 기, C6-C18아릴 기, 또는 C1-C18알킬에 의해 치환된 C6-C18아릴 기이고,
치환기 R81, R82, R83, R84, R85, R86, R87 및 R88 중 적어도 1개는 화학식 -(A1)o-(A2)p-(A3)q-(A4)r-X1을 나타내고; 여기서
X1은 Cl, Br 또는 I, ZnX12 (X12는 할로겐 원자임); -SnR207R208R209 (여기서, R207, R208 및 R209는 동일하거나 또는 상이하고, H 또는 C1-C8알킬이고, 여기서 2개의 라디칼은 임의로 공통 고리를 형성하고, 이들 라디칼은 임의로 분지형 또는 비분지형임); -B(OH)2, -B(OY1)2, , -BF4Na 또는 -BF4K (여기서 Y1은 각 경우에 독립적으로 C1-C18알킬 기이고, Y2는 각 경우에 독립적으로 C2-C10알킬렌 기이고, Y13 및 Y14는 서로 독립적으로 수소 또는 C1-C18알킬 기임)이며, 단 하기 화합물은 제외된다:
.A compound of formula (II):
(II)
In the above formula,
B 1 is N or CR 81 ,
B 2 is N or CR 82 ,
B 3 is N or CR 83 ,
B 4 is N or CR 84 ,
B 5 is N or CR 85 ,
B 6 is N or CR 86 ,
B 7 is N or CR 87 ,
B 8 is N or CR 88 , wherein R 81 , R 82 , R 83 , R 84 , R 85 , R 86 , R 87 and R 88 independently of each other can be substituted by H, optionally E and/or D C 1 -C 25 alkyl group which may be interposed; A C 6 -C 24 aryl group optionally substituted by G, a C 2 -C 30 heteroaryl group optionally substituted by G; Formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) r -R 16 or -(A 1 ) o -(A 2 ) p -(A 3 ) q -(A 4 ) a group of r -X 1 ,
o is 0 or 1, p is 0 or 1, q is 0 or 1, r is 0 or 1,
A 1 , A 2 , A 3 and A 4 are independently of each other a C 6 -C 24 arylene group which may be optionally substituted by G, or a C 2 -C 30 heteroarylene group which may be optionally substituted by G ego;
R 16 is —NR 10 R 11 , or —Si(R 12 )(R 13 )(R 14 ), a C 6 -C 24 aryl group which may be optionally substituted by G; Or a C 2 -C 30 heteroaryl group which may be optionally substituted by G;
R 10 and R 11 are independently of each other a C 6 -C 24 aryl group which may be optionally substituted by G; Or a C 2 -C 30 heteroaryl group which may be optionally substituted by G;
R 12 , R 13 and R 14 are independently of each other a C 1 -C 25 alkyl group which may be optionally substituted by E and/or may be interrupted by D; A C 6 -C 24 aryl group which may be optionally substituted by G; Or a C 2 -C 30 heteroaryl group which may be optionally substituted by G;
D is -CO-, -COO-, -S-, -SO-, -SO 2 -, -O-, -NR 65 -, -SiR 70 R 71 -, -POR 72 -, -CR 63 =CR 64 -Or -C≡C-,
E is -OR 69 , -SR 69 , -NR 65 R 66 , -COR 68 , -COOR 67 , -CONR 65 R 66 , -CN or F,
G is E, or C 1 -C 18 alkyl group, a C 6 -C 24 aryl group, or F, C 1 a C 6 -C 24 substituted with a -C 18 alkyl or C 1 -C 18 alkyl, O is interposed Aryl group; C 2 -C 30 heteroaryl group, or F, C 1 -C 18 alkyl or O is interposed a C 1 a C 2 -C 30 heteroaryl group is substituted by -C 18 alkyl;
R 63 and R 64 are independently of each other H, C 6 -C 18 aryl; C 6 -C 18 aryl substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl; Or C 1 -C 18 alkyl interrupted by -O-;
R 65 and R 66 are independently of each other a C 6 -C 18 aryl group; C 6 -C 18 aryl substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl group; Or a C 1 -C 18 alkyl group interrupted by -O-; or
R 65 and R 66 together form a 5 or 6 membered ring,
R 67 is a C 6 -C 18 aryl group; A C 6 -C 18 aryl group substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl group; Or a C 1 -C 18 alkyl group interrupted by -O-,
R 68 is H; C 6 -C 18 aryl group; A C 6 -C 18 aryl group substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl group; Or a C 1 -C 18 alkyl group interrupted by -O-,
R 69 is C 6 -C 18 aryl; C 6 -C 18 aryl substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl group; Or a C 1 -C 18 alkyl group interrupted by -O-,
R 70 and R 71 are independently of each other a C 1 -C 18 alkyl group, a C 6 -C 18 aryl group, or a C 6 -C 18 aryl group substituted by C 1 -C 18 alkyl,
R 72 is a C 1 -C 18 alkyl group, C 6 -C 18 aryl group, or C 6 -C 18 aryl group substituted by C 1 -C 18 alkyl,
At least one of the substituents R 81 , R 82 , R 83 , R 84 , R 85 , R 86 , R 87 and R 88 is of the formula -(A 1 ) o -(A 2 ) p -(A 3 ) q -( A 4 ) r -X 1 ; here
X 1 is Cl, Br or I, ZnX 12 (X 12 is a halogen atom); -SnR 207 R 208 R 209 (where R 207 , R 208 and R 209 are the same or different, H or C 1 -C 8 alkyl, where the two radicals optionally form a common ring, and these radicals are Optionally branched or unbranched); -B(OH) 2 , -B(OY 1 ) 2 , , -BF 4 Na or -BF 4 K (where Y 1 is independently a C 1 -C 18 alkyl group in each case, Y 2 is a C 2 -C 10 alkylene group independently in each case, Y 13 and Y 14 are independently of each other hydrogen or a C 1 -C 18 alkyl group), except for the following compounds:
.
.The compound according to claim 1 of the formula:
.
The compound according to claim 1 of the formula:
상기 식에서,
R83이 또는 의 기이고,
R87이 H,
의 기, 또는 화학식
의 기인 화학식 (Ia)의 화합물.A compound of formula (Ia):
In the above formula,
R 83 teeth or Is the flag of
R 87 is H,
Group, or formula
Compound of the formula (Ia), which is a group of.
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