KR20200064227A - InP thin film and method of fabricating of the same - Google Patents
InP thin film and method of fabricating of the same Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000002096 quantum dot Substances 0.000 claims abstract description 67
- 229910052798 chalcogen Inorganic materials 0.000 claims abstract description 31
- -1 tin chalcogen anion Chemical class 0.000 claims abstract description 27
- 239000002904 solvent Substances 0.000 claims abstract description 11
- 238000003756 stirring Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002243 precursor Substances 0.000 claims abstract description 8
- 239000012688 phosphorus precursor Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 17
- 229930195729 fatty acid Natural products 0.000 claims description 17
- 239000000194 fatty acid Substances 0.000 claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 15
- 150000004665 fatty acids Chemical class 0.000 claims description 15
- 125000005313 fatty acid group Chemical group 0.000 claims description 2
- 238000003852 thin film production method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 81
- 239000000243 solution Substances 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- JYPDBXWRMXCOSW-UHFFFAOYSA-N tris(trimethylsilyl)phosphane Chemical compound C[Si](C)(C)P([Si](C)(C)C)[Si](C)(C)C.C[Si](C)(C)P([Si](C)(C)C)[Si](C)(C)C JYPDBXWRMXCOSW-UHFFFAOYSA-N 0.000 description 1
- OUMZKMRZMVDEOF-UHFFFAOYSA-N tris(trimethylsilyl)phosphane Chemical compound C[Si](C)(C)P([Si](C)(C)C)[Si](C)(C)C OUMZKMRZMVDEOF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
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Abstract
Description
본 발명은 양자점 태양 전지 및 그 제조 방법에 관련된 것으로, 보다 상세하게는, 도핑된 양자점을 포함하는 양자점 태양 전지 및 그 제조 방법에 관련된 것이다. The present invention relates to a quantum dot solar cell and a method for manufacturing the same, and more particularly, to a quantum dot solar cell including a doped quantum dot and a method for manufacturing the same.
양자점이란 스스로 빛을 내는 수 나노미터 크기의 반도체 결정체를 말한다. 반도체 양자점은 conduction band edge와 valence band edge 에서 불연속적인 에너지 준위를 나타내고 있으며, 그 크기가 작아짐에 따라 에너지 준위의 불연속성은 심화되며, 결과적으로 양자점의 에너지 밴드갭 (Energy Band-Gap)이 증가하는 결과를 나타낸다.A quantum dot is a semiconductor crystal of several nanometers that emits light on its own. Semiconductor quantum dots show discontinuous energy levels at the conduction band edge and the valence band edge, and as the size decreases, the discontinuity of the energy level increases, resulting in an increase in the energy band-gap of the quantum dots. Indicates.
크기 조절을 통한 광학적 특성의 자유로운 변환이나 좁은 발색 파장이 부여하는 높은 색 순도, 그리고 용매에 용해하여 공정을 진행할 수 있다는 장점이 있으며, 카드뮴(Cd)과 셀레늄(Se)로 대표되는 Ⅱ?-Ⅵ족 양자점들과 Cd의 독성 때문에 대안으로 활발하게 연구 되고 있는 양자점들 중 인화인듐(InP)은 Ⅲ?-Ⅴ족 양자점을 대표하며 그 외 구리(Cu), 인듐(In) 그리고 황(S)으로 구성되는 비Cd계 양자점에 대한 연구들이 진행되고 있다. Free conversion of optical properties through size adjustment, high color purity provided by a narrow color wavelength, and the advantage of being able to proceed with the process by dissolving in a solvent. Ⅱ?-Ⅵ, represented by cadmium (Cd) and selenium (Se) Among the quantum dots being actively studied as alternatives due to the toxicity of the group quantum dots and Cd, indium phosphide (InP) represents the III-V group quantum dots, and other copper (Cu), indium (In) and sulfur (S) Studies are being conducted on non-Cd-based quantum dots.
양자점은 디스플레이는 물론, 태양 전지의 광전 변환층, 바이오 센서, 광 센서, 조명 등 다양한 분야에 활용될 수 있어, 양자점을 이용한 많은 연구들이 진행되고 있다. Quantum dots can be utilized in various fields such as display, photoelectric conversion layer of solar cells, biosensors, optical sensors, lighting, and many studies using quantum dots have been conducted.
본 발명이 해결하고자 하는 일 기술적 과제는, 광전 변환 효율이 향상된 InP 박막 및 그 제조 방법을 제공하는 데 있다. One technical problem to be solved by the present invention is to provide an InP thin film with improved photoelectric conversion efficiency and a method for manufacturing the same.
본 발명이 해결하고자 하는 다른 기술적 과제는, 중금속을 포함하지 않는 InP 박막 및 그 제조 방법을 제공하는 데 있다. Another technical problem to be solved by the present invention is to provide an InP thin film containing no heavy metal and a method for manufacturing the same.
본 발명이 해결하고자 하는 또 다른 기술적 과제는, 제조 공정이 간소화된 InP 박막 및 그 제조 방법을 제공하는 데 있다.Another technical problem to be solved by the present invention is to provide an InP thin film having a simplified manufacturing process and a manufacturing method thereof.
본 발명이 해결하고자 하는 또 다른 기술적 과제는, 가시광선 대역의 흡수율이 향상된 InP 박막 및 그 제조 방법을 제공하는 데 있다.Another technical problem to be solved by the present invention is to provide an InP thin film with improved absorption of visible light bands and a method of manufacturing the same.
본 발명이 해결하고자 하는 기술적 과제는 상술된 것에 제한되지 않는다.The technical problem to be solved by the present invention is not limited to the above.
상기 기술적 과제를 해결하기 위해, 본 발명은 InP 박막의 제조 방법을 제공한다. In order to solve the above technical problem, the present invention provides a method of manufacturing an InP thin film.
일 실시 예에 따르면, 상기 InP 박막의 제조 방법은, 인듐 전구체 및 인 전구체를 이용하여, InP 양자점을 형성하는 단계, 주석 칼코겐 음이온을 갖는 베이스 용매에 상기 InP 양자점을 첨가하고 교반하여, 상기 주석 칼코겐 음이온을 상기 InP 양자점에 결합시키는 단계, 및 상기 주석 칼코겐 음이온이 결합된 상기 InP 양자점을 기판에 코팅하고 열처리하여, 주석이 도핑된 상기InP 양자점을 갖는 InP 박막을 제조하는 단계를 포함할 수 있다. According to one embodiment, the method of manufacturing the InP thin film, using an indium precursor and a phosphorus precursor, forming an InP quantum dot, adding the InP quantum dot to a base solvent having a tin chalcogen anion and stirring the tin A step of bonding a chalcogen anion to the InP quantum dot, and coating the InP quantum dot to which the tin chalcogen anion is bonded to a substrate and heat-treating, thereby producing an InP thin film having the InP quantum dot doped with tin. Can be.
일 실시 예에 따르면, 상기 InP 양자점의 표면에 지방산이 제공되고, 상기 베이스 용매에 상기 InP 양자점을 첨가하고 교반하는 단계에서, 상기 지방산은 상기 주석 칼코겐 음이온으로 치환되어, 상기 주석 칼코겐 음이온이 상기 InP 양자점에 결합되는 것을 포함할 수 있다. According to one embodiment, a fatty acid is provided on the surface of the InP quantum dot, and in the step of adding and stirring the InP quantum dot to the base solvent, the fatty acid is substituted with the tin chalcogen anion, so that the tin chalcogen anion is It may include that coupled to the InP quantum dot.
일 실시 예에 따르면, 상기 주석 칼코겐 음이온은, SnS4 4-인 것을 포함할 수 있다. According to an embodiment, the tin chalcogen anion may include SnS 4 4- .
본 발명의 실시 예에 따른 InP 박막의 제조 방법은, 인듐 전구체 및 인 전구체를 이용하여, InP 양자점을 형성하는 단계, 주석 칼코겐 음이온을 갖는 베이스 용매에 상기 InP 양자점을 첨가하고 교반하여, 상기 주석 칼코겐 음이온을 상기 InP 양자점에 결합시키는 단계, 및 상기 주석 칼코겐 음이온이 결합된 상기 InP 양자점을 기판에 코팅하고 열처리하여, 주석이 도핑된 상기InP 양자점을 갖는 InP 박막을 제조하는 단계를 포함할 수 있다. Method of manufacturing an InP thin film according to an embodiment of the present invention, using an indium precursor and a phosphorus precursor, forming an InP quantum dot, adding the InP quantum dot to a base solvent having a tin chalcogen anion, and stirring the tin A step of bonding a chalcogen anion to the InP quantum dot, and coating the InP quantum dot to which the tin chalcogen anion is bonded to a substrate and heat-treating, thereby producing an InP thin film having the InP quantum dot doped with tin. Can be.
이에 따라, 중금속을 포함하지 않는 것은 물론, 가시광선 대역을 용이하게 흡수할 수 있는 주석이 도핑된 상기 InP 양자점을 갖는 상기 InP 박막이 제공될 수 있다. Accordingly, the InP thin film having the InP quantum dot doped with tin that can easily absorb the visible light band, as well as containing no heavy metal, can be provided.
또한, 간단한 용액 공정으로 플렉시블한 기판에 용이하게 상기 InP 박막의 제조 공정이 제공될 수 있으며, 태양 전지, 광 검출기, 광 센서 등 다양한 소자에 활용될 수 있다. In addition, the manufacturing process of the InP thin film can be easily provided to a flexible substrate with a simple solution process, and it can be utilized in various devices such as a solar cell, a photo detector, and an optical sensor.
도 1은 본 발명의 실시 예에 따른 InP 박막에 포함된 주석이 도핑된 InP 양자점의 제조 방법을 설명하기 위한 도면이다.
도 2는 본 발명의 실시 예에 따른 InP 박막의 제조 방법을 설명하기 위한 도면이다.
도 3은 본 발명의 실시 예에 따라 제조된 주석이 도핑된 InP 박막을 촬영한 SEM 사진이다. 1 is a view for explaining a method of manufacturing a tin-doped InP quantum dot included in the InP thin film according to an embodiment of the present invention.
2 is a view for explaining a method of manufacturing an InP thin film according to an embodiment of the present invention.
3 is a SEM photograph of an InP thin film doped with tin prepared according to an embodiment of the present invention.
이하, 첨부된 도면들을 참조하여 본 발명의 바람직한 실시 예를 상세히 설명할 것이다. 그러나 본 발명의 기술적 사상은 여기서 설명되는 실시 예에 한정되지 않고 다른 형태로 구체화 될 수도 있다. 오히려, 여기서 소개되는 실시 예는 개시된 내용이 철저하고 완전해질 수 있도록 그리고 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 제공되는 것이다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed contents are thorough and complete and that the spirit of the present invention is sufficiently conveyed to those skilled in the art.
본 명세서에서, 어떤 구성요소가 다른 구성요소 상에 있다고 언급되는 경우에 그것은 다른 구성요소 상에 직접 형성될 수 있거나 또는 그들 사이에 제 3의 구성요소가 개재될 수도 있다는 것을 의미한다. 또한, 도면들에 있어서, 막 및 영역들의 두께는 기술적 내용의 효과적인 설명을 위해 과장된 것이다.In the present specification, when a component is referred to as being on another component, it means that it may be formed directly on another component, or a third component may be interposed between them. In addition, in the drawings, the thickness of the films and regions are exaggerated for effective description of the technical content.
또한, 본 명세서의 다양한 실시 예 들에서 제1, 제2, 제3 등의 용어가 다양한 구성요소들을 기술하기 위해서 사용되었지만, 이들 구성요소들이 이 같은 용어들에 의해서 한정되어서는 안 된다. 이들 용어들은 단지 어느 구성요소를 다른 구성요소와 구별시키기 위해서 사용되었을 뿐이다. 따라서, 어느 한 실시 예에 제 1 구성요소로 언급된 것이 다른 실시 예에서는 제 2 구성요소로 언급될 수도 있다. 여기에 설명되고 예시되는 각 실시 예는 그것의 상보적인 실시 예도 포함한다. 또한, 본 명세서에서 '및/또는'은 전후에 나열한 구성요소들 중 적어도 하나를 포함하는 의미로 사용되었다.In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another component. Therefore, what is referred to as the first component in one embodiment may be referred to as the second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. In addition, in this specification,'and/or' is used to mean including at least one of the components listed before and after.
명세서에서 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한 복수의 표현을 포함한다. 또한, "포함하다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 구성요소 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징이나 숫자, 단계, 구성요소 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 배제하는 것으로 이해되어서는 안 된다. In the specification, a singular expression includes a plural expression unless the context clearly indicates otherwise. Also, terms such as “include” or “have” are intended to indicate the presence of features, numbers, steps, elements, or combinations thereof described in the specification, and one or more other features, numbers, steps, or configurations. It should not be understood as excluding the possibility of the presence or addition of elements or combinations thereof.
또한, 하기에서 본 발명을 설명함에 있어 관련된 공지 기능 또는 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략할 것이다.In addition, in the following description of the present invention, when it is determined that detailed descriptions of related known functions or configurations may unnecessarily obscure the subject matter of the present invention, detailed descriptions thereof will be omitted.
도 1은 본 발명의 실시 예에 따른 InP 박막에 포함된 주석이 도핑된 InP 양자점의 제조 방법을 설명하기 위한 도면이고, 도 2는 본 발명의 실시 예에 따른 InP 박막의 제조 방법을 설명하기 위한 도면이다. 1 is a view for explaining a method of manufacturing a tin-doped InP quantum dot included in the InP thin film according to an embodiment of the present invention, Figure 2 is a view for explaining the manufacturing method of the InP thin film according to an embodiment of the present invention It is a drawing.
도 1 및 도 2를 참조하면, 인듐 전구체 및 인 전구체를 이용하여, InP 양자점(110)이 형성될 수 있다. 예를 들어, 상기 인듐 전구체는, 인듐 아세테이트(Indium acetate)일 수 있고, 상기 인 전구체는 트리스(트리메틸실릴)포스핀(tris(trimethylsilyl)phosphine)일 수 있다. 1 and 2, an InP
주석 칼코겐 음이온(114)을 갖는 베이스 용매에 상기 InP 양자점(110)을 첨가하고 교반하여, 상기 주석 칼코겐 음이온(114)을 상기 InP 양자점(110)에 결합시킬 수 있다. The InP
일 실시 예에 따르면, 상기 주석 칼코겐 음이온(114)은, SnS44-일 수 있다.According to an embodiment, the
상술된 상기 InP 양자점(110)의 제조 단계에서, 상기 InP 양자점(110)이 형성된 후, 상기 InP 양자점(110)은 지방산(112)을 제공하는 소스 용액에 분산될 수 있다. 이에 따라, 상기 InP 양자점(110)의 표면에 상기 지방산(112)이 부착될 수 있다. 이후, 상기 주석 칼코겐 음이온(114)을 갖는 상기 베이스 용매에 상기 InP 양자점(110)이 분산된 상기 소스 용액을 첨가하고 교반하는 단계에서, 상기 지방산(112)은 상기 주석 칼코겐 음이온(114)으로 치환되어, 상기 주석 칼코겐 음이온(114)이 상기 InP 양자점(110)에 결합될 수 있다. In the manufacturing step of the InP
일 변형 예에 따르면, 상기 InP 양자점(110)을 상기 지방산(112)을 제공하는 상기 소스 용액에 분산시키는 단계는, 상기 InP 양자점(110)을 상기 소스 용액에 분산하고 제1 온도에서 열처리를 수행하여 상기 지방산(112)이 결합된 상기 InP 양자점(110)을 제조하는 단계, 상기 지방산(112)이 결합된 상기 InP 양자점(110)을 수득하는 단계, 및 상기 지방산(112)이 결합된 상기 InP 양자점(110)을 다시 상기 소스 용액에 분산하고 제2 온도에서 열처리를 수행하여 상기 지방산(112)을 추가적으로 상기 InP 양자점(110)에 결합시키는 단계를 포함할 수 있다. 상기 지방산(112)이 추가적으로 결합된 상기 InP 양자점(110)이 포함된 상기 소스 용액은, 상술된 바와 같이, 상기 베이스 용매에 첨가 및 교반될 수 있다. 이 경우, 상기 제2 온도는 상기 제1 온도보다 높을 수 있고, 이에 따라, 상기 InP 양자점(110)에 다수의 상기 지방산(112)이 보다 용이하게 결합될 수 있고, 상기 지방산(112)이 상기 주석 칼코겐 음이온(114)으로 용이하게 치환될 수 있다. According to one variation, the step of dispersing the InP
상기 주석 칼코겐 음이온(114)이 결합된 상기 InP 양자점(110)을 기판(200)에 코팅하고 열처리하여, 주석이 도핑된 상기 InP 양자점(110)을 갖는 InP 박막(120)이 제조될 수 있다. The InP
주석이 도핑된 상기 InP 양자점(110)은 n-type 반도체 특성을 나타낼 수 있다. 이러한 n-type 박막형성을 위해, 상술된 본 발명의 실시 예에 따르지 않고 초크랄스키(Czochralski, Cz)법 또는 진공증착방법으로 Sn 도펀트와 InP 결정을 함께 성장시키는 경우, 제조단가가 비싸고, 유연기판에의 적용하기 용이하지 않다. The InP
하지만, 본 발명의 실시 예에 따르면, 콜로이드 상태의 상기 InP 양자점(110)을 합성한 뒤, 상기 지방산(112)로 둘러쌓인 상기 InP 양자점(110) 표면을 상기 주석 칼코겐 음이온(114)인 SnS4 4- 리간드로 치환하고, 상기 기판(200)에 코팅 후 열 처리하는 간소한 방법으로 상기 InP 양자점(110)-SnS4 4- 가 소결되면서 주석이 도핑된 InP 박막(120)이 제조될 수 있다. However, according to an embodiment of the present invention, after synthesizing the InP
상술된 본 발명의 실시 예에 따른 주석된 도핑된 InP 박막(120)은 태양 전지의 광 활성층으로 이용될 수 있다. The tin-doped InP
구체적으로, 제1 전극 상에 상기 주석이 도핑된 InP 박막(120), 전도성 고분자층, 제2 전극이 차례로 배치될 수 있다. 상기 제1 전극 및 상기 주석이 도핑된 InP 박막(120) 사이에 전자 전달층이 추가적으로 제공되거나, 또는 상기 제2 전극 및 상기 전도성 고분자층 사이에 정공 전달층이 추가적으로 제공될 수 있다. Specifically, the tin-doped InP
또한, 일 실시 예에 따르면, 상기 제1 전극 상에, 상기 주석이 도핑된 InP 박막(120)이 복수의 층으로 형성될 수 있다. 구체적으로, 주석의 도핑 농도가 상대적으로 낮은 제1 InP 박막이 형성되고, 주석의 도핑 농도가 상대적으로 높은 제2 InP 박막이 상기 제1 InP 박막 상에 형성될 수 있다. 주석의 도핑 농도는 상기 주석 칼코겐 음이온(114)을 갖는 상기 베이스 용매에 상기 InP 양자점(110)을 첨가하고 교반하여, 상기 주석 칼코겐 음이온(114)을 상기 InP 양자점(110)에 결합시키는 단계에서 조절될 수 있다. Further, according to an embodiment, on the first electrode, the tin-doped InP
이하, 본 발명의 구체적인 실험 예에 따른 주석이 도핑된 InP 박막의 제조 방법이 설명된다. Hereinafter, a method of manufacturing an InP thin film doped with tin according to a specific experimental example of the present invention will be described.
실시 예에 따른 InP 양자점 제조InP quantum dot production according to the embodiment
InP 코어의 인듐(In) 전구체 물질로써 0.4mmol 인듐 아세테이트(Indium acetate)와 1.67mmol 아세트산아연(Zinc acetate), 3.7mmol 미리스트산(Myristic acid), 7ml의 1-옥타데센(1-octadecene)을 3-neck flask의 110℃ 진공 환경에서 2시간 동안 교반 가열하였다. As an indium precursor material for the InP core, 0.4mmol indium acetate, 1.67mmol zinc acetate, 3.7mmol myristic acid, and 7ml 1-octadecene were used. The 3-neck flask was heated under stirring in a vacuum environment at 110° C. for 2 hours.
질소 환경에서 상온으로 냉각시켜 인(P) 전구체인 0.317mmol 트리스(트리메틸실릴)포스핀(tris(trimethylsilyl)phosphine)을 주입한 뒤, 250℃로 승온시킨 뒤, 약 10분간 교반 가열하였다. After cooling to room temperature in a nitrogen environment, a phosphorus (P) precursor 0.317 mmol tris (trimethylsilyl) phosphine (tris (trimethylsilyl) phosphine) was injected, heated to 250° C., and stirred and heated for about 10 minutes.
상온으로 식힌 후, 과량의 acetone을 주입하고, 원심 분리 공정을 수행하여, InP 양자점을 침전시킨뒤, 이를 다시 hexane에 분산시켰다. After cooling to room temperature, excess acetone was injected, and centrifugation was performed to precipitate InP quantum dots, which were then dispersed again in hexane.
실시 예에 따른 주석 칼코겐 음이온이 결합된 InP 양자점 제조Preparation of InP quantum dots combined with tin chalcogen anions according to an embodiment
SnS4 4- 가 녹아있는 Dimethyl sulfoxide(DMSO) 에, 상술된 실시 예에 따라 제조된 InP 양자점 용액을 혼합한 뒤, 상온에서 교반하여 InP 양자점의 표면에 SnS4 4-를 결합시켜, InP 양자점을 hexane 층에서 DMSO 층으로 transfer 시켰다.After mixing the InP quantum dot solution prepared according to the above-described embodiment with Dimethyl sulfoxide (DMSO) in which SnS 4 4- is dissolved, and stirring at room temperature, SnS 4 4- is bound to the surface of the InP quantum dot to form an InP quantum dot. Transfer from hexane layer to DMSO layer.
실시 예에 따른 주석이 도핑된 InP 박막 제조Preparation of InP thin film doped with tin according to an embodiment
상술된 방법으로 제조된 SnS4 4-가 결합된 InP 양자점을 포함하는 용액을 유리 기판에 스핀 코팅 한 뒤, N2 gas 환경에서 250℃, 30분동안 열처리하여, 주석이 도핑된 InP 박막을 제조하였다. After spin coating a solution containing InP quantum dots in which SnS 4 4- is prepared by the above-described method on a glass substrate, and then heat-treating it in an N 2 gas environment for 250° C. for 30 minutes to prepare a tin-doped InP thin film. Did.
도 3은 본 발명의 실시 예에 따라 제조된 주석이 도핑된 InP 박막을 촬영한 SEM 사진이다.3 is an SEM photograph of an InP thin film doped with tin prepared according to an embodiment of the present invention.
이상, 본 발명을 바람직한 실시 예를 사용하여 상세히 설명하였으나, 본 발명의 범위는 특정 실시 예에 한정되는 것은 아니며, 첨부된 특허청구범위에 의하여 해석되어야 할 것이다. 또한, 이 기술분야에서 통상의 지식을 습득한 자라면, 본 발명의 범위에서 벗어나지 않으면서도 많은 수정과 변형이 가능함을 이해하여야 할 것이다.As described above, the present invention has been described in detail using preferred embodiments, but the scope of the present invention is not limited to specific embodiments, and should be interpreted by the appended claims. In addition, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.
110: 양자점
112: 지방산
114: 주석 칼코겐 음이온
120: InP 박막
200: 기판110: quantum dot
112: fatty acid
114: tin chalcogen anion
120: InP thin film
200: substrate
Claims (3)
주석 칼코겐 음이온을 갖는 베이스 용매에 상기 InP 양자점을 첨가하고 교반하여, 상기 주석 칼코겐 음이온을 상기 InP 양자점에 결합시키는 단계; 및
상기 주석 칼코겐 음이온이 결합된 상기 InP 양자점을 기판에 코팅하고 열처리하여, 주석이 도핑된 상기InP 양자점을 갖는 InP 박막을 제조하는 단계를 포함하는 InP 박막의 제조 방법.
Forming an InP quantum dot using an indium precursor and a phosphorus precursor;
Adding and stirring the InP quantum dot to a base solvent having a tin chalcogen anion, thereby binding the tin chalcogen anion to the InP quantum dot; And
A method of manufacturing an InP thin film comprising the step of coating the InP quantum dot to which the tin chalcogen anion is bonded to a substrate and heat-treating, thereby producing an InP thin film having the InP quantum dot doped with tin.
상기 InP 양자점의 표면에 지방산이 제공되고,
상기 베이스 용매에 상기 InP 양자점을 첨가하고 교반하는 단계에서, 상기 지방산은 상기 주석 칼코겐 음이온으로 치환되어, 상기 주석 칼코겐 음이온이 상기 InP 양자점에 결합되는 것을 포함하는 InP 박막의 제조 방법.
According to claim 1,
Fatty acid is provided on the surface of the InP quantum dot,
In the step of adding and stirring the InP quantum dot to the base solvent, the fatty acid is substituted with the tin chalcogen anion, so that the tin chalcogen anion is bonded to the InP quantum dot.
상기 주석 칼코겐 음이온은, SnS4 4-인 것을 포함하는 InP 박막의 제조 방법. According to claim 1,
The tin chalcogen anion, SnS 4 4- InP thin film production method comprising the.
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| JOURNAL OF APPLIED PHYSICS. VOLUME 89, NUMBER 4 * |
| Postigo et al.: "Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy", 2001 American Institute of Physics. vol.89 No.4 p2447-p2451 (2001.02.15)* * |
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