KR20200050607A - Method for producing hydrogen selenide based on zinc selenide - Google Patents

Abstract

The present invention relates to a method for producing hydrogen selenide based on zinc selenide, the method comprising the steps of: (a) dissolving zinc selenide (ZnSe) powder in an ionization target solution; (b) determining a physical colliding body according to the type of the ionization target solution; (c) ionizing the ionization target solution through injection of the physical colliding body; and (d) collecting the hydrogen selenide gas generated by making the ionized target solution react with the dissolved zinc selenide powder at a preset temperature. According to one embodiment of the present invention, it is possible to provide the method for producing hydrogen selenide based on zinc selenide by generating and collecting hydrogen selenide through the ionization reaction of zinc selenide.

Description

METHOD FOR PRODUCING HYDROGEN SELENIDE BASED ON ZINC SELENIDE

The present invention relates to a method for producing zinc selenide based hydrogen selenide, and more particularly, to a method for generating and collecting hydrogen selenide through ionization reaction of zinc selenide.

Hydrogen selenide (H ₂ Se) is the simplest hydrogen compound of selenium and is a colorless, flammable substance that exists in a gaseous state at standard conditions. More specifically, hydrogen selenide has a molecular weight of 80.98, a melting point of -65.73 ° C, a boiling point of -41.25 ° C, a specific weight of 3.55 and a vapor pressure of 0.95 MPa at 20 ° C. It is used as the main raw material for the same compound semiconductor, and especially in recent years, it is also used as the main raw material for CIS-based and CZTS-based solar cells.

Generally, hydrogen selenide is produced by directly contacting selenium with hydrogen at a temperature of 300 ° C. or higher, as shown in the formula below.

H ₂ (g) + Se (l) ↔ H ₂ Se (g)

Here, H ₂ (g) is hydrogen gas, Se (l) is selenium liquid, and H ₂ Se (g) is hydrogen selenide gas, and gas produced through the above reaction is hydrogen selenide storage tank through rapid cooling. It can be stored in the CVD (Chemical Vapor Deposition) method can be used for the purpose of depositing zinc selenide (ZnSe) excellent in infrared optical properties.

On the other hand, zinc selenide (ZnSe) is a light yellow solid compound containing zinc (Zn) and selenium (Se), and is an intrinsic semiconductor having a band gap of approximately 2.70 eV in a standard state. This zinc selenide has a high added value due to its unique characteristic that shows excellent transmittance in the wide infrared wavelength range used for thermal imaging equipment, but low absorption in the wavelength range for CO ₂ lasers used for industrial, military and medical purposes. As such, zinc selenide having a high added value can improve productivity through improved productivity and yield of hydrogen selenide.

Korean Registered Patent Publication No. 10-1661483 (2016.09.30) relates to a method and a supply device for a hydrogen selenide mixed gas, and an inert gas supplied from a base gas supply flow path and a hydrogen selenide gas supplied from a raw material gas supply flow path By mixing, as a method for supplying a hydrogen selenide mixed gas having a step of producing a hydrogen selenide mixed gas prepared at a predetermined concentration, and a step of supplying the mixed gas, further comprising the step of producing a hydrogen selenide mixed gas A flow control means for correcting the flow rate setting value of the raw material gas while being stopped, and the correction process is provided in the raw material gas supply flow path to control the flow rate of the selenide gas, and a flow rate measurement means for calibration It is measured by the process of flowing a gas for calibration at the same flow rate, and by the flow rate control means and the flow rate measurement means. And a step of obtaining a difference between respective flow rate values of the calibrated gas, and correcting the flow rate value of the hydrogen selenide gas flowing through the flow rate control means according to the difference, wherein the calibration gas is the base. Disclosed is a method for supplying a hydrogen selenide mixed gas, characterized in that the gas supply flow path is the inert gas supplied by a bypass flow path connecting the primary side of the flow control means of the raw material gas supply flow path.

Korean Registered Patent Publication No. 10-1821414 (2018.01.23) relates to a hydrogen selenide manufacturing apparatus, a reaction furnace for generating a gaseous hydrogen selenide by contacting hydrogen with a metal selenium of a raw material at a preset heating temperature, and A reaction for extracting a reaction gas including a hydrogen input path for introducing the hydrogen into the reactor, a metal selenium input path for introducing the metal selenium into the reactor, and a gaseous hydrogen selenide produced in the reactor. A gas discharge path and a hydrogen selenide collector for collecting the hydrogen selenide in the reaction gas discharged to the reaction gas discharge path at a predetermined cooling temperature, and at the same time, the reaction gas discharged from the reactor to the hydrogen selenide collector By cooling the unreacted metal selenium contained in the reaction gas and the metal selenium produced by hydrogen selenide re-decomposition Alternating with the cooling operation to condense and collect and by heating the hydrogen introduced into the reaction furnace from the hydrogen input path to vaporize the metal selenium collected by the cooling operation to be accompanied by hydrogen and introduced to the reaction furnace. It is provided with a plurality of heating coolers that are converted to, the metal selenium input path, the metal selenium input container opening and closing means provided between the metal selenium input container and the reactor, and the gas in the metal selenium input container A purge path for displacement is provided, and the hydrogen selenide collector comprises a gas circulation path for collecting the hydrogen selenide with the hydrogen selenide collector and extracting the reaction gas from the hydrogen selenide collector and returning it to the hydrogen input path. Disclosed is a hydrogen selenide production apparatus characterized in that.

Korean Registered Patent Publication No. 10-1661483 (2016.09.30) Korean Registered Patent Publication No. 10-1821414 (2018.01.23)

One embodiment of the present invention is to provide a method for producing selenide-based zinc selenide based on the production and capture of hydrogen selenide through the ionization reaction of zinc selenide.

One embodiment of the present invention is to dissolve the zinc selenide powder in water or an ionization target solution corresponding to hydrogen peroxide, and then inject a physical collider corresponding to plasma or microbubbling at regular cycles to ionize the zinc selenide. It is intended to provide a method for producing hydrogen selenide.

One embodiment of the present invention is to provide a method for producing zinc selenide-based selenide hydrogen, comprising reacting the dissolved zinc selenide powder with an ionized ionization target solution at a predetermined temperature to generate and collect hydrogen selenide. .

One embodiment of the present invention is to provide a zinc selenide-based hydrogen selenide production method comprising the steps of crushing a zinc selenide scrap to produce a zinc selenide powder.

Among the embodiments, the zinc selenide-based hydrogen selenide production method comprises dissolving zinc selenide (ZnSe) powder in an ionization target solution (a), and determining a physical collider according to the type of the ionization target solution (b ), Ionizing the ionization target solution through injection of the physical collider (c) and reacting the ionized ionization target solution with the dissolved zinc selenide powder at a preset temperature to collect hydrogen selenide gas generated Step (d) is included.

The step (a) may include grinding the zinc selenide scrap to generate the zinc selenide powder.

The step (b) may include determining a plasma as the physical collider when the solution to be ionized corresponds to water.

The step (b) may include determining microbubble as the physical collider when the solution to be ionized corresponds to hydrogen peroxide.

The step (c) may include intermittently performing the injection of the physical collider.

The step (c) may further include performing the injection of the physical collider at a cycle according to the following equation.

[Mathematics]

T = {C (m)} / {Temp (m) + I (n)}

The T is the cycle, the C () function is a concentration proportional function of the zinc selenide powder for the ionization target solution (m), and the Temp () function is a temperature-based function for the ionization target solution (m) , The I () function is an injection-based function for the physical collider (the n).

The step (d) may include determining the preset temperature from 80 ° C to 500 ° C.

The zinc selenide-based hydrogen selenide manufacturing method may further include the step (e) of cooling the collected hydrogen selenide gas to -55 ° C to -75 ° C to generate a hydrogen selenide liquid.

The disclosed technology can have the following effects. However, since the specific embodiment does not mean that all of the following effects should be included or only the following effects are included, the scope of rights of the disclosed technology should not be understood as being limited thereby.

The zinc selenide-based hydrogen selenide production method according to an embodiment of the present invention may provide a zinc selenide-based hydrogen selenide production method to generate and collect hydrogen selenide through an ionization reaction of zinc selenide.

In the zinc selenide-based hydrogen selenide production method according to an embodiment of the present invention, the zinc selenide powder is dissolved in water or an ionization target solution corresponding to hydrogen peroxide, and then a physical collider corresponding to plasma or microbubbling is injected at regular intervals. It can provide a zinc selenide-based hydrogen selenide production method comprising the step of ionizing.

A zinc selenide-based hydrogen selenide production method according to an embodiment of the present invention comprises reacting a dissolved zinc selenide powder with an ionized ionization target solution at a preset temperature to generate and collect hydrogen selenide, thereby collecting zinc selenide. It is possible to provide a method for producing a hydrogen-based selenide.

The zinc selenide-based hydrogen selenide production method according to an embodiment of the present invention may provide a zinc selenide-based hydrogen selenide production method comprising crushing a zinc selenide scrap to generate a zinc selenide powder. .

1 is a flowchart illustrating a method of manufacturing zinc selenide-based hydrogen selenide according to an embodiment of the present invention.
2 is another flowchart illustrating a method of manufacturing zinc selenide based hydrogen selenide according to an embodiment of the present invention.

Since the description of the present invention is merely an example for structural or functional description, the scope of the present invention should not be interpreted as being limited by the examples described in the text. That is, since the embodiments can be variously changed and have various forms, it should be understood that the scope of the present invention includes equivalents capable of realizing technical ideas. In addition, the purpose or effect presented in the present invention does not mean that a specific embodiment should include all of them or only such an effect, and the scope of the present invention should not be understood as being limited thereby.

Meanwhile, the meaning of terms described in the present application should be understood as follows.

Terms such as "first" and "second" are for distinguishing one component from other components, and the scope of rights should not be limited by these terms. For example, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

When a component is said to be "connected" to another component, it may be understood that other components may exist in the middle, although they may be directly connected to the other component. On the other hand, when a component is said to be "directly connected" to another component, it should be understood that no other component exists in the middle. On the other hand, other expressions describing the relationship between the components, that is, "between" and "immediately between" or "neighboring to" and "directly neighboring to" should be interpreted similarly.

Singular expressions are to be understood as including plural expressions unless the context clearly indicates otherwise, and terms such as “comprises” or “have” are used features, numbers, steps, actions, components, parts or the like. It is to be understood that a combination is intended to be present, and should not be understood as pre-excluding the existence or addition possibility of one or more other features or numbers, steps, actions, components, parts or combinations thereof.

In each step, the identification code (for example, a, b, c, etc.) is used for convenience of explanation. The identification code does not describe the order of each step, and each step clearly identifies a specific order in context. Unless stated, it may occur in a different order than specified. That is, each step may occur in the same order as specified, may be performed substantially simultaneously, or may be performed in the reverse order.

All terms used herein have the same meaning as generally understood by a person skilled in the art to which the present invention pertains, unless otherwise defined. The terms defined in the commonly used dictionary should be interpreted as being consistent with the meanings in the context of the related art, and cannot be interpreted as having ideal or excessively formal meanings unless explicitly defined in the present application.

1 is a flowchart illustrating a method of manufacturing zinc selenide-based hydrogen selenide according to an embodiment of the present invention.

Referring to FIG. 1, the zinc selenide-based hydrogen selenide production method 100 comprises dissolving zinc selenide (ZnSe) powder in an ionization target solution (S110), and determining a physical collider according to the type of the ionization target solution Step (S120), ionizing the ionization target solution through the injection of a physical collider (S130), reacting the ionized ionization target solution with the dissolved zinc selenide powder at a preset temperature to collect hydrogen selenide gas (S140) ).

Here, hydrogen selenide is the simplest hydrogen compound of selenium represented by the formula H ₂ Se, and is a colorless flammable substance that exists in a gaseous state in a standard state. More specifically, hydrogen selenide has physical properties such as a molecular weight of 80.98, a melting point of -65.73 ° C, a boiling point of -41.25 ° C, a specific weight of 3.55 and a vapor pressure of 0.95 MPa at 20 ° C, and an exposure limit of 0.05 ppm for 8 hours. It is a toxic inorganic compound.

On the other hand, zinc selenide is a light yellow solid represented by ZnSe and is an intrinsic semiconductor having a band gap of approximately 2.70 eV in the standard state. More specifically, zinc selenide is an inorganic compound having a crystalline structure of a particle with physical properties such as a molar mass of 144.35 g / mol, a density of 5.27 g / cm ³ and a melting point of 1,525 ° C. This zinc selenide rarely occurs in nature and can be obtained as a by-product in the smelting process of copper.

In addition, zinc selenide can be produced by depositing hydrogen selenide through a CVD method. In the following, the CVD method is schematically described.

Chemical Vapor Deposition (CVD)

Chemical vapor deposition (hereinafter referred to as CVD) is a technique of discharging raw material gas on a coated substrate and decomposing the raw material gas by applying external energy to form a thin film through a gas phase reaction. And a technology that decomposes the raw material gas using external energy such as light to form a thin film on the substrate through a chemical vapor reaction. Through CVD, thin films of chemical composition, which are difficult to obtain in the reaction of ordinary solid and liquid phases, can be easily produced, arbitrary thin films can be obtained depending on the source gas, and functions such as electrical and mechanical properties can be imparted to the substrate. . In general, CVD is difficult to control the composition of the thin film, but it is practically used in the field of semiconductors and ceramics because it can relatively easily perform large-area and large-scale surface treatment.

CVD is classified into thermal CVD, plasma CVD, and optical CVD according to the external energy used. In particular, plasma CVD is the most widely used method in recent years because it is possible to form a film at a low temperature and to perform mass processing compared to other CVD. Plasma CVD is a method of forming a thin film by applying a voltage (direct current and high frequency, etc.) to a raw material gas in a vacuum to create a state in which excitation molecules, called glow discharge, coexist with atoms, ions, radicals, and electrons. A thin film such as super nitride can be formed.

In step S110, the zinc selenide powder is prepared by dissolving in a solution to be ionized. In more detail, the zinc selenide is pulverized in a high purity nitrogen (99.999%) atmosphere for more than 24 hours by milling the bulk zinc selenide crystals to a particle size of 5 to 50 um, processed to a particle size of 5 to 50 um to be ionized in a dry powder form. Prepared in a mixed solution state. However, the present invention is not necessarily limited thereto, and may be prepared in a heterogeneous mixture state that does not involve chemical changes in zinc selenide, including colloids and suspensions.

The dried zinc selenide powder is put in a reactor to dissolve the powder in the solution to be ionized, and the vacuum degree is maintained at 10 ^-2 to 10 ^-3 torr to prepare the ionization reaction.

Here, ionization corresponds to the manipulation or phenomenon of making a charge-neutral atom or molecule into an ion with a positive or negative charge. In the case of a cation, one electron is separated from an atom or molecule to be completely separated into a cation and free electrons, and ionization energy is required in this process. In the case of negative ions, free electrons collide with atoms, releasing extra energy to become negative ions.

In one embodiment, zinc selenide powder may be produced through grinding of zinc selenide scrap. Here, the scrap (Scrap) may correspond to metal scraps or waste products produced during the manufacture of metal products. Selenium, a raw material for hydrogen selenide, is difficult to obtain in the natural state, and is mainly obtained as a by-product in the smelting process of copper, so the price fluctuates so that zinc selenide scrap is used to improve the productivity and yield of hydrogen selenide to improve cost competitiveness. There is an effect that can be equipped.

In addition, the thickness of the zinc selenide plate material is proportional to the deposition time, and the increase in added value with the increase in thickness increases non-linearly and steeply. Therefore, improving the productivity and yield of hydrogen selenide not only directly affects the productivity of zinc selenide, but also can achieve the effect of cost reduction through commercialization of excess hydrogen selenide.

In step S120, a physical collider according to the type of solution to be ionized is prepared. Here, the physical collider corresponds to a trigger that ionizes a solution to be ionized through physical collision. More specifically, a physical collider is composed of molecules that move actively with relatively large energy, such as a high-temperature gas, and corresponds to an object that ionizes a solution to be ionized through the movement of electrons during collision between molecules. The size of the ionization energy is different for each material, and the smaller the ionization energy is, the easier it is to be ionized.

In one embodiment, when the solution to be ionized corresponds to water, plasma is prepared as a physical collider. Here, the plasma corresponds to an ionized gas satisfying the Debye Sheath. A description will be given of the divisor shielding below.

Debye Sheath

Divy shielding (or electrostatic shielding) is a plasma layer condensed with a high-density cation, which is generally balanced by negative charges of opposite polarity on the surface of objects in contact with high positive charges. The thickness of this layer is called the Debye Length, and can be changed according to various properties (temperature, density, etc.) of the plasma.

Divy shielding is a concept that is usually raised because electrons have several tens of orders of magnitude or more of heat compared to ions and have a considerably lighter mass, and consequently, electrons are faster than ions, so plasma can be used in regions where the surface of an object interacts. The concept is that a relatively neutral object will be charged off. At this time, the section where the influence of electrons is called the divisor length, and as the potential increases, the radiation amount of electrons increases, and when the potential difference is a multiple of the electron temperature, an equilibrium is reached.

Meanwhile, plasma discharge is a phenomenon in which electrons energized by an electric field ionize water molecules, generating free radicals to generate hydrogen selenide through a strong redox reaction. For example, when the electrode is connected to the reactor containing the zinc selenide aqueous solution in the same way as electrolysis and an alternating voltage having a high frequency of 2KHz or higher is applied, hydrogen and oxygen elements secure time for chemical reaction to occur on the surface of the electrode. It fails to heat and generates air bubbles. When a voltage equal to or greater than the discharge electric field is applied to the inside of the bubble made by the above process, electrons receiving energy into the electric field ionize water molecules.

In another embodiment, when the solution to be ionized corresponds to hydrogen peroxide, microbubbling is prepared as a physical collider. Here, the zinc selenide and the hydrogen peroxide aqueous solution heated through microbubbling generate free radicals and hydrogen selenide through mutual reaction, and reactivity may be improved according to the supply of hydrogen gas. have. In addition, micro-bubbling can be relatively smoothly generated by supplying argon gas and nitrogen gas, which are inert gases.

In step S130, the solution to be ionized is ionized by injection of a physical collider. More specifically, when the solution to be ionized corresponds to water, it is ionized through a plasma discharge as shown in the reaction below.

^{_{H 2 O → H + + OH}} -

Here, H ₂ O corresponds to water, H ^{+ corresponds} to hydrogen ion ^{, and} OH ⁻ corresponds to hydroxide ion, so that hydrogen selenide is prepared through reaction with zinc selenide.

In one embodiment, the physical collider may be intermittently injected into the solution to be ionized. For example, the physical collider may be injected into the ionization target solution at a cycle according to the following equation to ionize the ionization target solution.

T = {C (m)} / {Temp (m) + I (n)}

Here, T is the period, C () function is the concentration proportional function of zinc selenide powder to the ionization target solution (m), Temp () function is the temperature-based function for the ionization target solution (m), and I () function Is the injection-based function for the physical collider (n). Therefore, the injection cycle of the physical collider increases in proportion to the concentration of the selenide powder, and may decrease in proportion to the temperature of the solution to be ionized and the injection amount of the physical collider.

In step S140, the ionized ionization target solution and the dissolved zinc selenide powder react at a predetermined temperature to generate hydrogen selenide. More specifically, when the solution to be ionized corresponds to water, the dissolved zinc selenide powder reacts as follows to generate hydrogen selenide.

^{ZnSe (s) + {H +} + OH -} → H 2 Se (g) + ZnO (s) ↓

Here, ZnSe (s) is a zinc selenide powder, {H ^{+ +} OH ^-} was dissolved ionized water, H ₂ Se (g) is a hydrogen selenide and zinc oxide (ZnO) as a by-product is precipitated.

On the other hand, when the solution to be ionized corresponds to hydrogen peroxide, the dissolved zinc selenide powder reacts as follows to generate hydrogen selenide.

_{ZnSe (s) + {HO 2} - + H +} (l) → H 2 Se (g) + 2ZnO (s) ↓

Here, ZnSe (s) is dissolved zinc selenide powder, H ₂ O ₂ (l) is ionized hydrogen peroxide, H ₂ Se (g) is hydrogen selenide, and zinc oxide (ZnO) is precipitated as a by-product.

In one embodiment, the ionized ionization target solution and the dissolved zinc selenide powder may react at 80 ° C to 500 ° C to generate hydrogen selenide. More specifically, the ionization target solution can be ionized at a relatively low temperature using a plasma, which is a physical collider, to react with zinc selenide to generate hydrogen selenide.

In order to produce hydrogen selenide by a conventional method, the collected liquid metal selenium is heated to vaporize, and the vaporized metal selenium is re-introduced into the reaction furnace with hydrogen, and the heating temperature is a temperature at which the metal selenium is vaporizable. It usually corresponds to 200 to 500 ° C.

2 is another flowchart illustrating a method of manufacturing zinc selenide based hydrogen selenide according to an embodiment of the present invention.

Referring to FIG. 2, the zinc selenide-based hydrogen selenide production method 100 further includes the step of generating a hydrogen selenide liquid by cooling the collected hydrogen selenide gas to -55 ° C to -75 ° C (S150). Hydrogen selenide can be generated and captured through the ionization reaction of zinc selenide.

In step S150, the collected hydrogen selenide gas may be cooled to -55 ° C to -75 ° C to generate a hydrogen selenide liquid. More specifically, the collected hydrogen selenide gas has a boiling point of -41.25 ° C, so it can be liquefied by cooling to -55 ° C to -75 ° C. At this time, the hydrogen accompanying hydrogen selenide has a boiling point of -252.9 ° C, so it cannot be liquefied and discharged separately.

As a result, the zinc selenide-based hydrogen selenide production method 100 comprises dissolving zinc selenide (ZnSe) powder in an ionization target solution (S110), and determining a physical collider according to the type of the ionization target solution (S120) ), Ionizing the ionization target solution through the injection of the physical collider (S130), reacting the ionized ionization target solution with the dissolved zinc selenide powder at a preset temperature to collect hydrogen selenide gas (S140) and capture Cooling the hydrogen selenide gas to -55 ℃ ~ -75 ℃ to produce a selenide hydrogen liquid (S150), it is possible to generate and capture hydrogen selenide through the ionization reaction of zinc selenide.

In addition, the zinc selenide-based hydrogen selenide production method 100 has the effect of improving the productivity and yield of hydrogen selenide by having a zinc selenide powder by crushing a zinc selenide scrap, thereby having cost competitiveness. The cost reduction effect can be obtained through the commercialization of surplus selenide.

In addition, the zinc selenide-based hydrogen selenide production method 100 dissolves the zinc selenide powder in water or an ionization target solution corresponding to hydrogen peroxide, and then ionizes it by injecting a physical collider corresponding to plasma or microbubbling at regular intervals. By doing so, hydrogen selenide can be produced at a relatively low temperature.

In addition, the zinc selenide-based hydrogen selenide production method 100 can produce hydrogen selenide relatively efficiently by reacting the dissolved zinc selenide powder with the ionized ionization target solution at a preset temperature to generate and collect hydrogen selenide. There is an advantage.

Although described above with reference to preferred embodiments of the present application, those skilled in the art variously modify the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. And can be changed.

100: zinc selenide-based hydrogen selenide manufacturing method

Claims (8)

(a) dissolving zinc selenide (ZnSe) powder in a solution to be ionized;
(b) determining a physical collider according to the type of the ionization target solution;
(c) ionizing the solution to be ionized through injection of the physical collider; And
(d) a method for producing zinc selenide-based hydrogen selenide, comprising collecting the hydrogen selenide gas generated by reacting the ionized ionization target solution with the dissolved zinc selenide powder at a preset temperature.
The method of claim 1, wherein step (a) is
A zinc selenide-based hydrogen selenide production method comprising crushing a zinc selenide scrap to produce the zinc selenide powder.
The method of claim 2, wherein step (b) is
A zinc selenide-based hydrogen selenide production method comprising determining a plasma as the physical collider when the solution to be ionized corresponds to water.
The method of claim 2, wherein step (b) is
A zinc selenide-based hydrogen selenide production method comprising determining microbubble as the physical collider when the solution to be ionized corresponds to hydrogen peroxide.
The method of claim 1, wherein step (c) is
Zinc selenide-based hydrogen selenide production method comprising the step of intermittently performing the injection of the physical collider.
The method of claim 1, wherein step (c) is
A method of manufacturing zinc selenide-based hydrogen selenide, further comprising performing the injection of the physical collider at a cycle according to the following equation.
[Mathematics]
T = {C (m)} / {Temp (m) + I (n)}
The T is the cycle, the C () function is a concentration proportional function of the zinc selenide powder for the ionization target solution (m), and the Temp () function is a temperature-based function for the ionization target solution (m) , The I () function is an injection amount based function for the physical collider (the n).
The method of claim 1, wherein step (d) is
A zinc selenide-based hydrogen selenide production method comprising the step of determining the predetermined temperature from 80 ° C to 500 ° C.
According to claim 1,
(e) cooling the collected hydrogen selenide gas to -55 ° C to -75 ° C to generate a hydrogen selenide liquid, further comprising a zinc selenide-based hydrogen selenide production method.

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