KR20200049087A - High-speed monitoring apparatus and monitoring method for a plasma induced current - Google Patents

High-speed monitoring apparatus and monitoring method for a plasma induced current Download PDF

Info

Publication number
KR20200049087A
KR20200049087A KR1020180131938A KR20180131938A KR20200049087A KR 20200049087 A KR20200049087 A KR 20200049087A KR 1020180131938 A KR1020180131938 A KR 1020180131938A KR 20180131938 A KR20180131938 A KR 20180131938A KR 20200049087 A KR20200049087 A KR 20200049087A
Authority
KR
South Korea
Prior art keywords
induced current
speed
monitoring device
plasma
plasma induced
Prior art date
Application number
KR1020180131938A
Other languages
Korean (ko)
Inventor
김용규
박두병
Original Assignee
티오에스주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 티오에스주식회사 filed Critical 티오에스주식회사
Priority to KR1020180131938A priority Critical patent/KR20200049087A/en
Publication of KR20200049087A publication Critical patent/KR20200049087A/en

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G01R19/2506—Arrangements for conditioning or analysing measured signals, e.g. for indicating peak values ; Details concerning sampling, digitizing or waveform capturing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G01R19/2506—Arrangements for conditioning or analysing measured signals, e.g. for indicating peak values ; Details concerning sampling, digitizing or waveform capturing
    • G01R19/2509—Details concerning sampling, digitizing or waveform capturing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

According to the present invention, provided is a plasma induced current high-speed monitoring device, which comprises: a detection unit sampling an induced current at high speed from a power supply unit which applies the AC to a heater; and an analysis unit filtering the sampled data over the second order and detecting whether arcing occurs based on the filtered data.

Description

플라즈마 유도전류 고속 모니터링 장치 및 방법{HIGH-SPEED MONITORING APPARATUS AND MONITORING METHOD FOR A PLASMA INDUCED CURRENT}High-speed plasma induction current monitoring device and method {HIGH-SPEED MONITORING APPARATUS AND MONITORING METHOD FOR A PLASMA INDUCED CURRENT}

본 발명은 원자층 증착장비(ALD)에서 플라즈마 유도 전류를 분석하여 아킹(Arcing) 발생 여부를 고속으로 모니터링하는 플라즈마 유도전류 고속 모니터링 장치 및 방법에 관한 것이다.The present invention relates to a high-speed plasma induction current monitoring apparatus and method for rapidly monitoring whether arcing occurs by analyzing a plasma induced current in an atomic layer deposition equipment (ALD).

원자층 증착장치(Atomic Layer Deposition; ALD) 프로세스는 이종 이상의 Source Gas와 Purge Gas의 반복 되는 Cycle을 통하여 Wafer에서 원자층 단위로 표면반응(Surface Reaction)을 하게 되므로 CVD의 기상반응(Vapor Reaction) 방식과 는 다르게 증착 속도가 느린 단점이 있다. 따라서 ALD에서는 Fill Tank와 ALD 밸브를 통하여 고압 고속으로 Gas를 공급할 수 있도록 하여 Cycle Time을 최소화 하는 노력으로 1초 내외의 매우 빠른 시간에 Cycle이 반복되고 있다. Atomic Layer Deposition (ALD) process undergoes surface reaction in atomic layer units on the wafer through repeated cycles of more than one source gas and purge gas, so vapor deposition reaction method of CVD Unlike the disadvantages, the deposition rate is slow. Therefore, in ALD, it is possible to supply gas at high pressure and high speed through the fill tank and ALD valve, and the cycle is repeated at a very fast time of about 1 second in an effort to minimize the cycle time.

본 발명은 플라즈마 유도 전류를 분석하여 아킹(Arcing) 발생 여부를 고속으로 모니터링하는 플라즈마 유도전류 고속 모니터링 장치 및 방법을 제공하고자 하는 것입니다.The present invention is to provide a high-speed plasma induction current monitoring device and method for monitoring the occurrence of arcing by analyzing the plasma induction current.

또한, 본 발명은 아킹에 대한 사전 인지로 생산 수율 개선 및 컴퍼넌트 교체 비용을 절감할 수 있는 플라즈마 유도전류 고속 모니터링 장치 및 방법을 제공하고자 하는 것입니다.In addition, the present invention is to provide a high-speed plasma induction current monitoring device and method that can reduce production replacement costs and improve production yield through prior recognition of arcing.

또한, 본 발명은 실시간 고속 데이터 처리 기술 및 가우시안 분포함수를 이용한 빅데이터 처리가 가능한 플라즈마 유도전류 고속 모니터링 장치 및 방법을 제공하고자 하는 것입니다. In addition, the present invention is to provide a high-speed plasma induction current monitoring device and method capable of real-time high-speed data processing technology and big data processing using a Gaussian distribution function.

발명의 일실시예에 따른 플라즈마 유도전류 고속 모니터링 장치는 히터에 교류를 인가하는 전원부로부터 유도 전류를 고속으로 샘플링하는 검출부; 및 샘플링된 데이터를 2차에 걸쳐 필터링하고, 필터링된 데이터를 기준으로 아킹 발생여부를 검출하는 분석부를 포함한다.A high-speed monitoring device for plasma induced current according to an embodiment of the present invention includes a detection unit for sampling an induced current at a high speed from a power supply unit that applies AC to a heater; And an analysis unit that filters the sampled data over the second order and detects whether or not arcing occurs based on the filtered data.

개시된 발명에 따르면, 플라즈마 유도 전류를 분석하여 아킹(Arcing) 발생 여부를 고속으로 모니터링할 수 있다.According to the disclosed invention, it is possible to rapidly monitor whether arcing occurs by analyzing the plasma induced current.

또한, 본 발명은 아킹에 대한 사전 인지로 생산 수율 개선 및 컴퍼넌트 교체 비용을 절감할 수 있다.In addition, the present invention can improve production yield and reduce component replacement costs by prior recognition of arcing.

또한, 본 발명은 실시간 고속 데이터 처리 기술 및 가우시안 분포함수를 이용한 빅데이터 처리가 가능할 수 있다.In addition, the present invention may enable real-time high-speed data processing technology and big data processing using a Gaussian distribution function.

도 1은 플라즈마 유도전류 고속 모니터링 장치 및 방법을 개략적으로 나타낸 도면이다.
도 2는 플라즈마 유도전류 고속 모니터링 장치에 의해 측정된 유도전류에 대한 필터링 과정을 설명하기 위한 도면이다.
도 3 내지 도 5는 플라즈마 유도전류 고속 모니터링 장치 및 방법에 따른 아킹을 검출하는 과정을 설명하기 위한 도면이다.1 is a view schematically showing an apparatus and method for monitoring plasma induced current at high speed.
2 is a view for explaining a filtering process for the induced current measured by the plasma induced current high-speed monitoring device.
3 to 5 are diagrams for explaining a process of detecting arcing according to a high-speed plasma induction current monitoring device and method.

이하, 첨부된 도면을 참조하여 발명을 실시하기 위한 구체적인 내용에 대하여 상세하게 설명한다. Hereinafter, specific contents for carrying out the invention will be described in detail with reference to the accompanying drawings.

도 1은 플라즈마 유도전류 고속 모니터링 장치 및 방법을 개략적으로 나타낸 도면이다.1 is a view schematically showing an apparatus and method for monitoring plasma induced current at high speed.

도 1을 참조하면, 플라즈마 유도전류 고속 모니터링 장치는 히터에 교류를 인가하는 전원부로부터 유도 전류를 수 마이크로초(μsec) 단위로 샘플링하고, 샘플링된 데이터에 대해 2차에 걸친 필터링을 수행한다.Referring to FIG. 1, the high speed monitoring device for plasma induced current samples the induced current from the power supply unit that applies AC to the heater in units of several microseconds (μsec), and performs secondary filtering on the sampled data.

플라즈마 유도전류 고속 모니터링 장치는 필터링이 완료된 데이터에 기초하여 아킹 발생여부를 검출한다. 이 때, 플라즈마 유도전류 고속 모니터링 장치는 아킹 발생 의심 구간을 확대하여 아킹 발생여부를 판단하고, 판단할 때는 레퍼런스 웨이퍼를 기준으로 아킹 또는 공정 불량을 판단할 수 있다. The plasma induction current high-speed monitoring device detects whether or not arcing occurs based on the filtered data. At this time, the plasma induced current high-speed monitoring device may determine whether or not arcing occurs by expanding a suspected arcing section, and when determining, may determine arcing or process failure based on a reference wafer.

도 2는 플라즈마 유도전류 고속 모니터링 장치에 의해 측정된 유도전류에 대한 필터링 과정을 설명하기 위한 도면이다.2 is a view for explaining a filtering process for the induced current measured by the plasma induced current high-speed monitoring device.

도 2를 참조하면, 플라즈마 유도전류 고속 모니터링 장치는 히터에 교류를 인가하는 전원부로부터 유도 전류를 수 마이크로초(μsec) 단위로 샘플링하고, 샘플링된 데이터에 대해 2차에 걸친 필터링을 수행한다. 플라즈마 유도전류 고속 모니터링 장치는 impulse 형식의 원본 data를 level 값으로 변환하는 1차 필터링을 수행하고, 군집성 측정에 불필요한 부분을 제거하는 2차 필터링를 수행할 수 있다. 이에 따라, 원본 data 중 불필요한 부분을 효율적으로 제거할 수 있다.Referring to FIG. 2, the high speed monitoring device for plasma induced current samples the induced current from the power supply unit that applies AC to the heater in units of several microseconds (μsec), and performs second-order filtering on the sampled data. The high-speed monitoring device for plasma induction current can perform primary filtering that converts impulse-type original data into level values, and secondary filtering that removes unnecessary parts for cluster measurement. Accordingly, unnecessary portions of the original data can be efficiently removed.

도 3 내지 도 5는 플라즈마 유도전류 고속 모니터링 장치 및 방법에 따른 아킹을 검출하는 과정을 설명하기 위한 도면이다.3 to 5 are diagrams for explaining a process of detecting arcing according to a plasma induction current high-speed monitoring device and method.

도 3 내지 도 5를 참조하면, 플라즈마 유도전류 고속 모니터링 장치는 아킹 발생 의심 구간을 1차 또는 2차에 걸쳐 확대하여 아킹 발생여부를 판단할 수 있다.3 to 5, the plasma induced current high-speed monitoring device may determine whether or not arcing occurs by expanding the suspected arcing section over the first or second time.

플라즈마 유도전류 고속 모니터링 장치는 확대된 데이터와 레퍼런스 웨이퍼를 비교하여 아킹 또는 공정 불량을 검출할 수 있다.The plasma induced current high-speed monitoring device can detect an arcing or process defect by comparing the enlarged data and the reference wafer.

설명된 실시예들은 다양한 변형이 이루어질 수 있도록 각 실시예들의 전부 또는 일부가 선택적으로 조합되어 구성될 수도 있다.The described embodiments may be configured by selectively combining all or part of each embodiment so that various modifications can be made.

또한, 실시예는 그 설명을 위한 것이며, 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술분야의 통상의 전문가라면 본 발명의 기술사상의 범위에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.In addition, it should be noted that the embodiments are for the purpose of explanation and not for the limitation. In addition, a person skilled in the art of the present invention will understand that various embodiments are possible within the scope of the technical idea of the present invention.

Claims (1)

히터에 교류를 인가하는 전원부로부터 유도 전류를 고속으로 샘플링하는 검출부; 및
샘플링된 데이터를 2차에 걸쳐 필터링하고, 필터링된 데이터를 기준으로 아킹 발생여부를 검출하는 분석부를 포함하는, 플라즈마 유도전류 고속 모니터링 장치.









A detection unit for sampling an induced current at a high speed from a power supply unit that applies AC to the heater; And
A plasma induced current high-speed monitoring device comprising an analysis unit that filters the sampled data over a second order and detects whether or not arcing occurs based on the filtered data.









KR1020180131938A 2018-10-31 2018-10-31 High-speed monitoring apparatus and monitoring method for a plasma induced current KR20200049087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020180131938A KR20200049087A (en) 2018-10-31 2018-10-31 High-speed monitoring apparatus and monitoring method for a plasma induced current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180131938A KR20200049087A (en) 2018-10-31 2018-10-31 High-speed monitoring apparatus and monitoring method for a plasma induced current

Publications (1)

Publication Number Publication Date
KR20200049087A true KR20200049087A (en) 2020-05-08

Family

ID=70678307

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180131938A KR20200049087A (en) 2018-10-31 2018-10-31 High-speed monitoring apparatus and monitoring method for a plasma induced current

Country Status (1)

Country Link
KR (1) KR20200049087A (en)

Similar Documents

Publication Publication Date Title
US10283421B2 (en) System to detect wafer arcing in semiconductor manufacturing equipment
WO2005045890A3 (en) Method and apparatus for etch endpoint detection
JP6875224B2 (en) Plasma processing equipment and semiconductor equipment manufacturing system
WO2007145801A3 (en) Method and apparatus to detect fault conditions of a plasma processing reactor
TW200612511A (en) Leak detector and process gas monitor
CN102403191B (en) Air leakage detecting method for reaction cavity and control method for vacuum reactor
JP2006121072A5 (en)
KR101169764B1 (en) Real time monitoring system of process chamber
US20170178874A1 (en) Plasma processing apparatus and operating method of plasma processing apparatus
US11430643B2 (en) Quantification of processing chamber species by electron energy sweep
US11437262B2 (en) Wafer de-chucking detection and arcing prevention
KR20200049087A (en) High-speed monitoring apparatus and monitoring method for a plasma induced current
KR101591961B1 (en) Device and method for plasma status measuring of plasma processing chamber
WO2013022023A1 (en) Particle monitor method and particle monitor device
KR101108541B1 (en) Apparatus for determining of plasma process chamber cleaning period by using skin effect
JP3213290U (en) Measuring device that measures gas dissociation using a spectrometer
KR20140093511A (en) Apparatus for providing the sample gas and method thereof
TWI682456B (en) Plasma processing device and analysis method for analyzing plasma processing data
JP5912011B2 (en) Equipment for chemically etching workpieces
Arshad et al. In-situ detection method of abnormal plasma discharge in plasma-assisted deposition processes
CN102443816B (en) Analytic pretreatment machine for metal material and treatment method for analytic pretreatment machine
US20230314269A1 (en) Leak detection for gas sticks
KR20190050254A (en) Substrate processing apparatus and monitoring method of processing substrate
KR20200052102A (en) High-speed monitoring apparatus and monitoring method of a pulse plasma
CN220272426U (en) Monitoring device for wafer processing equipment and wafer processing equipment