KR20200003624A - Solution composition for metal oxide thin-film and method for producing metal oxide thin-film - Google Patents

Abstract

The present invention relates to a solution composition for a metal oxide thin film and a production method of a metal oxide thin film using the same. The solution composition for a metal oxide thin film according to the present invention can be applied to a solution process and is possible to provide a metal oxide thin film which exhibits high charge mobility compared to a-IGZO TFTs and the like.

Description

SOLUTION COMPOSITION FOR METAL OXIDE THIN-FILM AND METHOD FOR PRODUCING METAL OXIDE THIN-FILM

The present invention relates to a solution composition for a metal oxide thin film applied to the manufacture of a metal oxide semiconductor and a method for forming a metal oxide thin film using the same.

To drive high resolution, large area, and high frame rate displays, semiconductors with high field-effect mobility are required.

For example, amorphous silicon thin film transistors (hereinafter referred to as 'a-Si: H TFTs') have very low charge mobility of about 1 cm ² / Vs or less and are difficult to apply to driving high resolution and high frame rate displays.

As another example, the low-temperature polysilicon thin film transistors (hereinafter referred to as 'LTPS TFTs') may have very high charge mobility of about 100 cm ² / Vs, which may be advantageous in driving high resolution and high frame rate displays. . However, LTPS TFTs have the disadvantage of relatively high manufacturing cost and difficult implementation of large area.

As another example, metal oxide thin film transistors (hereinafter referred to as 'oxide TFTs') have low manufacturing cost and large area, and have higher charge mobility (for example, about 10) than a-Si: H TFTs. cm ² / Vs), and has been studied as an electrical device that can replace silicon-based thin film transistors.

Indium-gallium-zinc oxide thin film transistors (hereinafter referred to as 'a-IGZO TFTs'), which are representative oxide TFTs, are mainly applied to the deposition process using sputtering, and a solution process is also applied. have.

However, when the solution process is used to manufacture the oxide TFTs, it is difficult to stably maintain a charge mobility of 10 cm ² / Vs or more due to uneven distribution of metal ions generated by solvent evaporation and inadequate surface characteristics. That is, it is difficult to manufacture oxide TFTs suitable for driving high resolution, large area and high frame rate displays in solution process.

Accordingly, there is a need for development of a material for producing oxide TFTs, which can be applied to a solution process but can exhibit relatively high charge mobility compared to a-IGZO TFTs.

The present invention is to provide a solution composition for a metal oxide thin film that can be applied to a solution process but can exhibit a high charge mobility compared to a-IGZO TFTs.

In addition, the present invention is to provide a method for producing a metal oxide thin film using the solution composition.

According to the invention,

An indium oxide precursor, a zinc oxide precursor and a lithium oxide precursor dissolved in a solvent;

The indium oxide precursor and the zinc oxide precursor are included in a molar ratio of 75:25 to 80:20 based on the molar number of indium atoms and zinc atoms;

The lithium oxide precursor is included in 20 to 30 mol% based on the total number of moles of indium and zinc atoms contained in the indium oxide precursor and the zinc oxide precursor, based on the number of moles of lithium atoms,

A solution composition for a metal oxide thin film is provided.

In addition, according to the present invention,

Preparing a solution composition for the metal oxide thin film;

Coating the metal oxide thin film solution composition on a substrate; And

Heat-treating the coated substrate

It includes, a method for producing a metal oxide thin film is provided.

Hereinafter, a solution composition for a metal oxide thin film and a method of manufacturing the metal oxide thin film using the same will be described.

As used herein, metal oxide precursors such as indium oxide precursors, zinc oxide precursors, and lithium oxide precursors refer to compounds that can form metal oxides by any heat treatment.

Unless expressly stated herein, the terminology is merely for reference to particular embodiments and is not intended to limit the invention.

As used herein, the singular forms “a”, “an” and “the” include plural forms as well, unless the phrases clearly indicate the opposite.

As used herein, the meaning of “includes” embodies a particular characteristic, region, integer, step, operation, element or component, and excludes the addition of other specific characteristics, region, integer, step, operation, element, or component. It is not.

In this specification, terms including ordinal numbers such as 'first' and 'second' are used for the purpose of distinguishing one component from other components and are not limited by the ordinal number. For example, within the scope of the present invention, the first component may also be referred to as the second component, and similarly, the second component may be referred to as the first component.

I. Solution Composition for Metal Oxide Thin Films

According to one embodiment of the invention,

An indium oxide precursor, a zinc oxide precursor and a lithium oxide precursor dissolved in a solvent;

The indium oxide precursor and the zinc oxide precursor are included in a molar ratio of 75:25 to 80:20 based on the molar number of indium atoms and zinc atoms;

The lithium oxide precursor is included in 20 to 30 mol% based on the total number of moles of indium and zinc atoms contained in the indium oxide precursor and the zinc oxide precursor, based on the number of moles of lithium atoms,

A solution composition for a metal oxide thin film is provided.

As a result of continuous studies by the present inventors, it was confirmed that the solution composition for the metal oxide thin film satisfying the above composition enables the provision of the metal oxide thin film having a high charge mobility compared to a-IGZO TFTs and the like in the solution process.

The solution composition for a metal oxide thin film provided in the present invention includes an indium oxide precursor, a zinc oxide precursor, a lithium oxide precursor, and a solvent.

The indium oxide precursor, the zinc oxide precursor, and the lithium oxide precursor may each form a metal oxide by an arbitrary heat treatment (for example, a series of heat treatment processes for forming a metal oxide thin film when manufacturing a thin film transistor through a solution process). It means compound which can

In the solution composition for the metal oxide thin film, the indium oxide precursor, the zinc oxide precursor, and the lithium oxide precursor are present in a state in which they are dissolved and evenly mixed in the solvent.

In particular, according to an embodiment of the invention, the indium oxide precursor and the zinc oxide precursor is preferably included in the solution composition in a molar ratio of 75: 25 to 80: 20 based on the mole number of indium atoms and zinc atoms.

Specifically, the molar ratio of indium atoms and zinc atoms included in the solution composition for the metal oxide thin film may be 75:25 to 80:20, more preferably 75.5: 24.5 to 80:20.

In the two components of the indium oxide precursor and the zinc oxide precursor included in the metal oxide thin film solution composition, when the indium atom is less than 75 mol% (that is, the zinc atom exceeds 25 mol%), the saturation to be achieved in the present invention Charge mobility can also be difficult to represent. In addition, when the indium atom exceeds 80 mol% (that is, the zinc atom is less than 20 mol%), the saturation charge mobility decreases due to the leakage current.

In the solution composition for a metal oxide thin film, the total number of moles of indium atoms and zinc atoms included in the indium oxide precursor and the zinc oxide precursor is preferably 0.050 to 0.130 mole.

Specifically, the total number of moles of indium and zinc atoms in the solution composition for the metal oxide thin film is 0.050 moles or more, or 0.060 moles or more, or 0.070 moles or more, or 0.080 moles or more, or 0.085 moles or more, or 0.090 More than moles; And 0.130 mol or less, or 0.125 mol or less, or 0.120 mol or less, or 0.115 mol or less.

Preferably, the total mole number of the indium atoms and the zinc atoms included in the solution composition for the metal oxide thin film is 0.050 to 0.130 mol, or 0.060 to 0.125 mol, or 0.070 to 0.120 mol, or 0.080 to 0.120 mol, or 0.085 to 0.115 moles, or 0.090 to 0.115 moles. That is, in order to be able to represent the saturation charge mobility value to be achieved in the present invention by the solution process, the total mole number of the indium atoms and zinc atoms included in the metal oxide thin film solution composition is preferably 0.050 mol or more. However, the higher the total moles of indium and zinc atoms included in the solution composition, the lower the threshold voltage may be. However, if the total moles are too high, the thickness of the semiconductor film may increase and the charge trap may increase. Threshold voltage may be increased. Therefore, the total mole number of the indium atom and the zinc atom included in the metal oxide thin film solution composition is preferably 0.130 mole or less.

On the other hand, according to the embodiment of the invention, in the metal oxide thin film solution composition, the lithium oxide precursor is the total moles of indium atoms and zinc atoms contained in the indium oxide precursor and the zinc oxide precursor based on the number of moles of lithium atoms. It is preferably included in 20 to 30 mol% relative to the number.

That is, the metal oxide thin film solution composition includes 20 to 30 mol% of lithium atoms relative to the total moles of indium atoms and zinc atoms.

Specifically, the metal oxide thin film solution composition may be at least 20 mol%, or at least 21 mol%, or at least 22 mol%, or at least 23 mol%, or at least 24 mol%, based on the total moles of indium and zinc atoms. Or 25 mol% or more; And 30 mol% or less, or 28 mol% or less, or 26 mol% or less of lithium atoms.

When the lithium atoms included in the metal oxide thin film solution composition are included in a ratio of less than 20 mol% or more than 30 mol% relative to the total moles of indium and zinc atoms, the saturation charge mobility value to be achieved in the present invention is represented. It can be difficult.

Preferably, the total mole number of indium atoms, zinc atoms, and lithium atoms included in the indium oxide precursor, the zinc oxide precursor, and the lithium oxide precursor in the solution composition for the metal oxide thin film is 0.090 based on the above content ratio. To 0.150 mol, or 0.100 to 0.148 mol, or 0.110 to 0.147 mol.

Meanwhile, the indium oxide precursor may be indium acetate, indium acetate hydrate, indium acetylacetonate, indium butoxide, indium chloride, or indium chloride. Hydrate (indium chloride hydrate), indium chloride tetrahydrate, indium fluoride, indium hydroxide, indium iodide, indium nitrate At least one indium compound selected from the group consisting of, indium nitrate hydrate, indium sulfate, indium sulfate hydrate, and indium oxide may be applied.

The zinc oxide precursor is zinc acetate, zinc acetate dihydrate, zinc acetylacetonate hydrate, zinc chloride, zinc fluoride, zinc One or more zinc compounds selected from the group consisting of nitrate hexahydrate, zinc carbonate, and zinc sulfate may be applied.

As the lithium oxide precursor, at least one lithium compound selected from the group consisting of lithium nitrate, lithium acetate dihydrate, and lithium chloride may be applied.

The solvent is not particularly limited as long as the solvent has a property that the metal oxide precursors can be dissolved therein.

Preferably, the solvent isopropanol, 2-methoxyethanol, 1-methoxy 2-propanol, N-methyl-2-pyrrolidone (N-methyl-2-pyrrolidone), dimethylformamide, ethanol, deionized water, methanol, acetylacetone, dimethylamineborane, and acetonitrile One or more compounds selected from the group consisting of (acetonitrile) may be applied.

The content of the solvent may be determined in a range such that the solution composition for the metal oxide thin film is in a concentration suitable for applying to the solution process while uniformly dissolving the metal oxide precursor.

II. Method for producing metal oxide thin film

According to another embodiment of the invention,

Preparing a solution composition for the metal oxide thin film;

Coating the metal oxide thin film solution composition on a substrate; And

Heat-treating the coated substrate

It includes, a method for producing a metal oxide thin film is provided.

The metal oxide thin film solution composition may further comprise the steps of: adding and dissolving the indium oxide precursor and the zinc oxide precursor in the above-described molar ratio to the solvent; And it may be prepared by a method including a step of mixing by adding a lithium oxide precursor in the above-described molar ratio.

The metal oxide thin film solution composition may further include preparing a metal oxide precursor first solution including the indium oxide precursor and the zinc oxide precursor; Preparing a second solution of the metal oxide precursor including the lithium oxide precursor; And it may be prepared by a method including a step of uniformly mixing the first solution and the second solution.

Here, the metal oxide precursor first solution and the second solution may each independently include a solvent selected from the above examples, and may preferably include the same solvent.

The coating of the metal oxide solution composition on the substrate may include spin coating, slit coating, dip coating, spraying, drop casting, inkjet printing, electrohydrodynamic printing, roll-to-roll printing, roll-to-plate printing, And imprinting.

As the substrate on which the solution composition for the metal oxide thin film is coated, a silicon wafer, a glass substrate, a plastic substrate, or the like may be applied. For example, when the substrate is a silicon wafer, an inorganic thin film transistor may be applied to the memory device. When the substrate is a glass substrate it can be applied to a display element. In addition, when the substrate is a plastic substrate, the substrate may be applied to an electronic device requiring flexible characteristics.

The heat treatment of the coated substrate is a step of forming a desired metal oxide thin film while evaporating a solvent in the solution composition for thin metal oxide thin film coated on the substrate.

The heat treatment may be performed by applying heat to the coated substrate under an air atmosphere using a conventional apparatus such as a hot plate.

The heat treatment may be performed by annealing for a time that a desired metal oxide thin film may be formed at a temperature of 100 to 400 ° C.

In addition, an oxide thin film transistor may be manufactured by forming a source / drain electrode pattern on the metal oxide thin film formed by the above method.

The solution composition for a metal oxide thin film according to the present invention makes it possible to provide a metal oxide thin film that can be applied to a solution process and exhibit high charge mobility compared to a-IGZO TFTs.

1 is a transfer curve measured for a thin film transistor according to Preparation Example A-1.
2 is a transfer curve measured for the thin film transistor according to Preparation Example A-2.
3 is a transfer curve measured for the thin film transistor according to Preparation Example A-3.
4 is a transfer curve measured for the thin film transistor according to Preparation Example B-1.
5 is a transfer curve measured for the thin film transistor according to Preparation Example B-2.
6 is a transfer curve measured for the thin film transistor according to Preparation Example B-3.
7 is a transfer curve measured for the thin film transistor according to Preparation Example B-4.
8 is a transfer curve measured for the thin film transistor according to Preparation Example B-5.
9 is a transfer curve measured for the thin film transistor according to Preparation Example B-6.
10 is a transfer curve measured for the thin film transistor according to Preparation Example B-7.
11 is a transfer curve measured for the thin film transistor according to Preparation Example B-8.

Hereinafter, preferred embodiments will be presented to aid in understanding the present invention. However, the following examples are only for illustrating the present invention, and the present invention is not limited thereto.

Example 1

10 ml of 2-methoxyethanol, 0.068 mol of indium nitrate hydrate, and 0.022 mol of zinc nitrate hexahydrate were added to the flask, and the mixture was stirred to indium Zinc oxide precursor solution was prepared.

0.02 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution and stirred to prepare a solution composition for a metal oxide thin film.

Example 2

10 ml of 2-methoxyethanol, 0.085 mol of indium nitrate hydrate, and 0.0275 mol of zinc nitrate hexahydrate were added to the flask, and the mixture was stirred and indium Zinc oxide precursor solution was prepared.

0.025 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Example 3

10 ml of 2-methoxyethanol, 0.085 mol of indium nitrate hydrate, and 0.0275 mol of zinc nitrate hexahydrate were added to the flask, and the mixture was stirred and indium Zinc oxide precursor solution was prepared.

0.0281 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Comparative Example 1

10 ml of 2-methoxyethanol, 0.085 mol of indium nitrate hydrate, and 0.0275 mol of zinc nitrate hexahydrate were added to the flask, and the mixture was stirred and indium Zinc oxide precursor solution was prepared.

0.0371 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Comparative Example 2

10 ml of 2-methoxyethanol, 0.085 mol of indium nitrate hydrate, and 0.0275 mol of zinc nitrate hexahydrate were added to the flask, and the mixture was stirred and indium Zinc oxide precursor solution was prepared.

0.0124 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Comparative Example 3

10 ml of 2-methoxyethanol, 0.0338 mol of indium nitrate hydrate, and 0.0788 mol of zinc nitrate hexahydrate were added to the flask, followed by stirring to indium Zinc oxide precursor solution was prepared.

0.025 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Comparative Example 4

10 ml of 2-methoxyethanol, 0.0563 mol of indium nitrate hydrate, and 0.0563 mol of zinc nitrate hexahydrate were added to the flask, followed by stirring to indium Zinc oxide precursor solution was prepared.

0.025 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Comparative Example 5

10 ml of 2-methoxyethanol, 0.0788 mol of indium nitrate hydrate, and 0.0338 mol of zinc nitrate hexahydrate were added to the flask, followed by stirring to indium Zinc oxide precursor solution was prepared.

0.025 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Comparative Example 6

10 ml of 2-methoxyethanol, 0.0956 mol of indium nitrate hydrate, and 0.0169 mol of zinc nitrate hexahydrate were added to the flask, followed by stirring to indium Zinc oxide precursor solution was prepared.

0.025 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Comparative Example 7

10 ml of 2-methoxyethanol, 0.102 mol of indium nitrate hydrate, and 0.033 mol of zinc nitrate hexahydrate were added to the flask, followed by stirring to indium Zinc oxide precursor solution was prepared.

0.03 mol of lithium acetate dihydrate was added to the indium-zinc oxide precursor solution and stirred to prepare a solution composition for a metal oxide thin film.

Comparative Example 8

10 ml of 2-methoxyethanol, 0.085 mol of indium nitrate hydrate, and 0.0275 mol of zinc nitrate hexahydrate were added to the flask, and the mixture was stirred and indium Zinc oxide precursor solution was prepared.

0.0124 mol of gallium nitrate hydrate was added to the indium-zinc oxide precursor solution, and stirred to prepare a solution composition for a metal oxide thin film.

Preparation Example A-1

The solution composition for the metal oxide thin film according to Example 1 was coated on a heavily-doped Si wafer (Si / SiO ₂ wafer) on which a SiO ₂ insulator having a thickness of 200 nm was formed by a spin coating method. The coated substrate was annealed in the air at a temperature of 350 ° C. for about 2 hours using a hot plate to obtain a substrate on which a metal oxide thin film was formed.

An oxide thin film transistor was manufactured by depositing an aluminum (Al) thin film pattern (source / drain electrode pattern) having a thickness of 75 nm on a metal oxide thin film of the substrate using a vacuum evaporator.

Preparation Example A-2

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Example 2 was used instead of the metal oxide thin film solution composition of Example 1.

Preparation Example A-3

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Example 3 was used instead of the solution composition for the metal oxide thin film of Example 1.

Preparation Example B-1

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Comparative Example 1 was used instead of the solution composition for the metal oxide thin film of Example 1.

Preparation Example B-2

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Comparative Example 2 was used instead of the solution composition for the metal oxide thin film of Example 1.

Preparation Example B-3

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Comparative Example 3 was used instead of the solution composition for the metal oxide thin film of Example 1.

Preparation Example B-4

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Comparative Example 4 was used instead of the solution composition for the metal oxide thin film of Example 1.

Preparation Example B-5

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Comparative Example 5 was used instead of the solution composition for the metal oxide thin film of Example 1.

Preparation Example B-6

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Comparative Example 6 was used instead of the solution composition for the metal oxide thin film of Example 1.

Preparation Example B-7

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Comparative Example 7 was used instead of the solution composition for the metal oxide thin film of Example 1.

Preparation Example B-8

An oxide thin film transistor was obtained in the same manner as in Preparation Example A-1, except that the metal oxide thin film composition according to Comparative Example 8 was used instead of the solution composition for the metal oxide thin film of Example 1.

Test Example

Transistor performance was measured using an Agilent 4155C semiconductor parameter analyzer.

In order to measure the transfer characteristics, a drain bias was applied at 30 V and a gate bias was applied at a range of -30 V to 30 V. The saturation field-effect mobility (SD), threshold voltage (V), and on / off ratio values obtained from the measured transfer characteristics were extracted, respectively.

Transfer curves according to the test are shown in Figures 1 to 11, each characteristic value is shown in Table 2 below.

Solution composition for metal oxide thin film Indium and zinc lithium
(Mol% of In + Zn) Precursor
Total moles Molar ratio (In: Zn) Moles Example 1 75.6: 24.4 0.090 22 0.110 Example 2 75.6: 24.4 0.113 22 0.138 Example 3 75.6: 24.4 0.113 25 0.141 Comparative Example 1 75.6: 24.4 0.113 33 0.150 Comparative Example 2 75.6: 24.4 0.113 11 0.125 Comparative Example 3 30.0: 70.0 0.113 22 0.138 Comparative Example 4 50.0: 50.0 0.113 22 0.138 Comparative Example 5 70.0: 30.0 0.113 22 0.138 Comparative Example 6 85.0: 15.0 0.113 22 0.138 Comparative Example 7 75.6: 24.4 0.135 22 0.165 Comparative Example 8 75.6: 24.4 0.113 11 (Ga) 0.125

Solution composition SD
(@V _D = 30V) Threshold voltage (V) On / off ratio Preparation Example A-1 Example 1 17.0 4.3 8.4 x 10 ⁵ Preparation Example A-2 Example 2 15.0 1.1 1.9 x 10 ⁴ Preparation Example A-3 Example 3 12.0 2.2 4.2 x 10 ³ Preparation Example B-1 Comparative Example 1 <0.1 -10.0 1.8 x 10 ⁴ Preparation Example B-2 Comparative Example 2 9.0 1.4 5.5 x 10 ³ Preparation Example B-3 Comparative Example 3 0.3 2.4 3.0 x 10 ⁵ Preparation Example B-4 Comparative Example 4 2.7 4.2 2.8 x 10 ⁶ Preparation Example B-5 Comparative Example 5 3.1 2.3 1.2 x 10 ⁴ Preparation Example B-6 Comparative Example 6 1.5 -5.0 9.2 x 10 ³ Preparation Example B-7 Comparative Example 7 7.0 -4.7 1.2 x 10 ³ Preparation Example B-8 Comparative Example 8 4.0 4.2 2.1 x 10 ⁵

Referring to Tables 1 and 2, the oxide thin film transistors of Preparation Examples A-1 to A-3 to which the solution composition for metal oxide thin films according to Examples 1 to 5 were applied were used for the metal oxide thin films according to Comparative Examples 1 to 8. It was confirmed that the solution composition had a higher saturation charge mobility value as compared with the oxide thin film transistors of Preparation Examples B-1 to B-8.

Claims (9)

An indium oxide precursor, a zinc oxide precursor and a lithium oxide precursor dissolved in a solvent;
The indium oxide precursor and the zinc oxide precursor are included in a molar ratio of 75:25 to 80:20 based on the molar number of indium atoms and zinc atoms;
The lithium oxide precursor is included in 20 to 30 mol% based on the total number of moles of indium and zinc atoms contained in the indium oxide precursor and the zinc oxide precursor, based on the number of moles of lithium atoms,
Solution composition for metal oxide thin film.
The method of claim 1,
The total number of moles of indium atoms and zinc atoms contained in the indium oxide precursor and the zinc oxide precursor is 0.050 to 0.130 moles, the solution composition for a metal oxide thin film.
The method of claim 1,
The total number of moles of indium atoms, zinc atoms and lithium atoms contained in the indium oxide precursor, the zinc oxide precursor and the lithium oxide precursor is 0.090 to 0.150 moles, the solution composition for a metal oxide thin film.
The method of claim 1,
The indium oxide precursor is indium acetate, indium acetate hydrate, indium acetylacetonate, indium butoxide, indium chloride, indium chloride hydrate chloride hydrate, indium chloride tetrahydrate, indium fluoride, indium hydroxide, indium iodide, indium nitrate, indium nitrate A solution for thin metal oxide films comprising at least one indium compound selected from the group consisting of indium nitrate hydrate, indium sulfate, indium sulfate hydrate, and indium oxide Composition.
The method of claim 1,
The zinc oxide precursor is zinc acetate, zinc acetate dihydrate, zinc acetylacetonate hydrate, zinc chloride, zinc fluoride, zinc knight. A solution composition for a thin film of metal oxide, comprising at least one zinc compound selected from the group consisting of latex nitrate hexahydrate, zinc carbonate, and zinc sulfate.
The method of claim 1,
The lithium oxide precursor includes at least one lithium compound selected from the group consisting of lithium nitrate, lithium acetate dihydrate, and lithium chloride, a solution composition for a metal oxide thin film .
The method of claim 1,
The solvent is isopropanol, 2-methoxyethanol, 1-methoxy 2-propanol, N-methyl-2-pyrrolidone (N-methyl- 2-pyrrolidone, dimethylformamide, ethanol, deionized water, methanol, acetylacetone, dimethylamineborane, and acetonitrile A solution composition for a metal oxide thin film, comprising one or more compounds selected from the group.
Preparing a solution composition for a metal oxide thin film according to claim 1;
Coating the metal oxide thin film solution composition on a substrate; And
Heat-treating the coated substrate
It includes, a method for producing a metal oxide thin film.
The method of claim 8,
The heat treatment is performed under a temperature of 100 to 400 ℃, metal oxide thin film manufacturing method.

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