KR20190143299A - Method for manufacturing optoelectronic device - Google Patents

Abstract

A method for manufacturing an optoelectronic device is provided. The method includes forming a first element layer including a first electrode, a second electrode, and a light emitting part disposed between the first electrode and the second electrode, forming a first encapsulation layer covering the first element layer on the second electrode, forming a first protective layer on the first encapsulation layer, and forming a second element layer on the first protective layer. The forming the second element layer may include applying a first conductive film on the first protective layer, and forming a third electrode by etching the first conductive film. The reliability of the optoelectronic device can be improved.

Description

Manufacturing method of optoelectronic device {METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optoelectronic device, and more particularly, to a method for manufacturing a stacked photoelectronic device.

A display is an image display device that implements a screen for viewing various information, and is being used in a variety of household appliances and portable electronic devices in modern times. Recently, the display industry is being researched and developed according to the demand of high resolution. The display resolution increases as the number of pixels in a specific area increases. In the conventional pixel structure, auxiliary pixels emitting different colors are horizontally aligned. Accordingly, a plurality of auxiliary pixels horizontally aligned for one pixel are required.

The problem to be solved by the present invention is to provide a method for manufacturing a photoelectronic device with improved reliability.

Another object of the present invention is to provide a photoelectronic device of a small size.

The problem to be solved by the present invention is not limited to the above-mentioned problem, another task that is not mentioned will be clearly understood by those skilled in the art from the following description.

According to embodiments of the present disclosure, a method of manufacturing an optoelectronic device includes a first electrode, a second electrode, and a light emitting part disposed between the first electrode and the second electrode. Forming a first device layer, forming a first encapsulation layer covering the first device layer on the light emitting portion, forming a first protective layer on the first encapsulation layer, and the first protective layer It may include forming a second device layer on the. Forming the second device layer may include applying a first conductive film on the first protective layer, and forming a third electrode by etching the first conductive film.

In example embodiments, the first passivation layer may directly contact an upper surface of the first encapsulation layer.

In example embodiments, the first encapsulation layer may include aluminum oxide (Al 2 O 3).

According to one embodiment, the first protective layer is an inorganic material, such as silicon oxide (SiOx) or silicon nitride (SiNx), or polyethylene, polypropylene, polyethyleneterephthalate, teflon And organic materials such as polyvinylidene fluoride (PVDF), polyetherether ketone, or polyphenylene sulfide.

According to one embodiment, forming the second device layer includes forming an element portion on the third electrode after forming the third electrode, and forming a fourth electrode on the element portion. can do. After forming the second device layer, the method may further include forming a second encapsulation layer covering the second device layer on the device portion.

In example embodiments, the device unit may include a light emitting diode, a solar cell, a photo detector, or a transistor.

In example embodiments, the method may further include forming a third device layer on the second device layer. The third element layer may be formed by forming a second protective layer on the second encapsulation layer, then coating a second conductive layer on the second protective layer, and etching the second conductive layer to form a fifth protective layer. It may include forming an electrode.

In example embodiments, the second electrode and the third electrode may include a transparent electrode.

In example embodiments, a side surface of the third electrode may be inclined with respect to an upper surface of the first protective layer.

In example embodiments, the etching of the first conductive layer may include a photolithography process.

According to embodiments of the present disclosure, an electronic device includes a first electrode, a second electrode, and a light emitting part disposed between the first electrode and the second electrode. And a first encapsulation layer disposed on the second electrode to cover the first electronic element, a protective layer disposed on the first encapsulation layer, and a second electronic element disposed on the protective layer. . The second electronic device may include a third electrode disposed on the first encapsulation layer, an element portion on the third electrode, a fourth electrode on the element portion, and a second encapsulation layer on the fourth electrode. The third electrode may include a patterned conductive layer.

According to the manufacturing method of the optoelectronic device according to the embodiments of the present invention, since the encapsulation layers are formed on the device layers, the encapsulation layers may protect the device layers from external oxygen or moisture. That is, the device layers may not be damaged during the manufacturing process of the optoelectronic device, and a highly reliable optoelectronic device may be manufactured.

In addition, since the first passivation layer is formed on the first encapsulation layer, even if an etching process is performed on the first passivation layer, the first device layer under the first passivation layer may not be damaged. Accordingly, in a later process of forming the second device layer on the first device layer, the third electrode of the second device layer may be formed on the first protective layer through an etching process, and the third electrode of the fine pattern may be formed. Can be formed. That is, it is possible to manufacture a photoelectronic device of a fine size.

1 is a schematic view illustrating an optoelectronic device according to embodiments of the present invention.
2 is an exploded perspective view illustrating an optoelectronic device according to embodiments of the present invention.
3 to 13 are perspective views illustrating a method of manufacturing an optoelectronic device according to embodiments of the present invention.
14A and 14B are SEM photographs of the third electrode of Example 1. FIG.
15 is a color coordinate of Example 1. FIG.

In order to fully understand the constitution and effects of the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various forms and various changes may be made. Only, the description of the embodiments are provided to make the disclosure of the present invention complete, and to provide a complete scope of the invention to those skilled in the art. Those skilled in the art will understand that the concept of the present invention may be carried out in any suitable environment.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, the words "comprises" and / or "comprising" refer to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Where it is mentioned herein that a film (or layer) is on another film (or layer) or substrate, it may be formed directly on another film (or layer) or substrate or a third film ( Or layers) may be interposed.

 Although terms such as first, second, third, etc. are used to describe various regions, films (or layers), etc. in various embodiments of the present specification, these regions, films should not be limited by these terms. do. These terms are only used to distinguish any given region or film (or layer) from other regions or films (or layers). Thus, the film quality referred to as the first film quality in one embodiment may be referred to as the second film quality in other embodiments. Each embodiment described and illustrated herein also includes its complementary embodiment. Portions denoted by like reference numerals denote like elements throughout the specification.

Unless otherwise defined, terms used in the embodiments of the present invention may be interpreted as meanings commonly known to those of ordinary skill in the art.

Hereinafter, an optoelectronic device according to a concept of the present invention will be described with reference to the drawings.

1 is a schematic diagram illustrating an optoelectronic device according to embodiments of the present invention, and is a cross-sectional view of a portion of the optoelectronic device. 2 is an exploded perspective view illustrating an optoelectronic device according to embodiments of the present invention.

1 and 2, the optoelectronic device may include a plurality of device layers 200, 400, and 600 disposed on the substrate 100. For example, the first to third device layers 200, 400, and 600 may be RGB pixels, respectively. Alternatively, the first to third device layers 200, 400, and 600 may include a light emitting diode, a solar cell, a photo detector, or a transistor.

Substrate 100 may be provided. The substrate 100 may be a transparent substrate. For example, the substrate 100 may include polyethylene terephthalate (PET), poly carbonate (PC), polyethylene naphthalate (PEN), or poly imide (PI). Alternatively, the substrate 100 may be a glass substrate.

The first device layer 200 may be disposed on the substrate 100. The first device layer 200 may include a first electrode 210, a second electrode 230, and a first device portion 220. The first device unit 220 may be disposed between the first electrode 210 and the second electrode 230. For example, the first electrode 210 may extend on the bottom surface of the first device portion 220, and the second electrode 230 may extend on the top surface of the first device portion 220. That is, as shown in FIG. 1, the first electrode 210, the first element 220, and the second electrode 230 may be sequentially stacked around the first element 220. Unlike this, the first electrode 210, the first device unit 220, and the second electrode 230 may be parallel to the substrate 100. That is, the first device unit 220 may be disposed at the same level as the first electrode 210 and the second electrode 230. Alternatively, the first device unit 220 may be disposed from an upper surface of the first electrode 210 to an upper surface of the second electrode 230. Hereinafter, the description will be continued with reference to the first device unit 220 illustrated in FIG. 2. The first device unit 220 may be electrically connected to the first electrode 210 and the second electrode 230. For example, the first electrode 210 may be an anode of the first device unit 220, and the second electrode 230 may be a cathode of the first device unit 220.

The first device unit 220 may include a light emitting unit. The light emitting part is not particularly limited as long as it is typically used in an organic light emitting diode or a quantum dot diode. For example, a polyfluorene derivative, a (poly) paraphenylenevinylene derivative, a polyphenylene (polyphenylene) derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, anthracene derivatives, butadiene derivatives, butadiene derivatives, tetratracene derivatives, distyrylarylene derivatives, It may be an organic light emitting material including at least one of a benzazole derivative or a carbazole. In addition, the light emitting unit may be an organic light emitting material including a dopant. For example, the dopant may be xanthene, perylene, cumarine, rhodamine, rubrene, dicyanomethylenepyran, thiopyran, ( Among thia pyrilium, periflanthene derivatives, indenoperylene derivatives, carbostyryl, nile red, or quinacridone It may include at least one selected. The light emitting unit may generate light using recombination of holes or electrons supplied from the outside.

The first electrode 210 and the second electrode 230 may be a patterned conductive layer. For example, the first electrode 210 may extend from one end of the first device unit 220 to the outside of the substrate 100. The second electrode 230 may extend from the other end of the first element unit 220 to the outside of the substrate 100. The first electrode 210 and the second electrode 230 may be transparent electrodes. For example, the transparent electrode may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide, graphene, metal nanowires, conductive polymers, or a thin metal thin film. The metal thin film may include gold (Au), silver (Ag), copper (Gu), aluminum (Al), nickel (Ni), platinum (Pt), or palladium (Pd).

The first device layer 200 further includes a hole transport layer and a hole injection layer disposed between the first device portion 220 and the first electrode 210, or the first device portion 220 and the second electrode ( It may further include an electron transport layer and the electron injection layer disposed between the 230. For example, the hole injection layer may include HAT-CN, CuPc or m-MTDATA. For example, the hole transport layer may comprise TcTa, αNPD, TPD, TAPC or Teflon-AF. For example, the electron transport layer may comprise BmPyPB, 3TPYMB, Alq3 or TAZ. For example, the electron injection layer includes ions of lithium (Li), aluminum (Al), zinc (Zn), calcium (Ca), potassium (K), or cesium (Cs) (eg, LiF), or Mixed compounds. The hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer may not be provided as necessary.

The first encapsulation layer 310 may be disposed on the first device layer 200. The first encapsulation layer 310 may cover the first device layer 200. The first electrode 210, the second electrode 230, and the first device unit 220 may be filled by the first encapsulation layer 310. The first encapsulation layer 310 may include aluminum oxide (Al ₂ O ₃ ). The first encapsulation layer 310 may protect the first device layer 200 from external oxygen or moisture.

The first passivation layer 320 may be disposed on the first encapsulation layer 310. The first protective layer 320 may directly contact the first encapsulation layer 310. The first passivation layer 320 may include an inorganic thin film or an organic thin film. For example, the inorganic thin film may include silicon nitride (SiNx) or silicon oxide (SiOx). The organic thin film is polyethylene, polypropylene, polyethylene terephthalate, teflon, polyvinylidene fluoride (PVDF), polyetherether ketone or polyphenylene It may include a high molecular material such as polyphenylene sulfide. According to an embodiment, the first protective layer 320 may be a multilayer thin film including the above materials. The first protective layer 320 may protect the first device layer 200 from the etchant during the manufacturing process of the optoelectronic device.

The second device layer 400 may be disposed on the first passivation layer 320. The second device layer 400 may include a third electrode 410, a fourth electrode 430, and a second device portion 420. The second device unit 420 may be disposed between the third electrode 410 and the fourth electrode 430. For example, the third electrode 410 may extend onto the bottom surface of the second device portion 420, and the fourth electrode 430 may extend onto the top surface of the second device portion 420. Alternatively, the third electrode 410, the second element portion 420, and the fourth electrode 430 may be disposed in parallel on the substrate 100, or the second element portion 420 may be formed on the third electrode 410. It may be disposed over the upper surface of the fourth electrode 430 from the upper surface. The second device unit 420 may be electrically connected to the third electrode 410 and the fourth electrode 430. For example, the third electrode 410 may be an anode of the second device portion 420, and the fourth electrode 430 may be a cathode of the second device portion 420.

The second device unit 420 may include a light emitting unit. The light emitting unit may be not particularly limited as long as it is typically used for an organic light emitting diode or a quantum dot diode. The light emitting unit may generate light using recombination of holes or electrons supplied from the outside. Alternatively, the second device unit 420 may be a device such as a light emitting diode, a solar cell, a photo detector, or a transistor.

The third electrode 410 and the fourth electrode 430 may be patterned conductive layers. For example, the third electrode 410 may extend from one end of the second element portion 420 to the outside of the substrate 100. The fourth electrode 430 may extend to the outside of the substrate 100 from the other end of the second device unit 420. Unlike shown, the side surface 410a of the third electrode 410 may be inclined with respect to the top surface of the first protective layer 320. The third electrode 410 and the fourth electrode 430 may be transparent electrodes.

The second encapsulation layer 510 may be disposed on the second device layer 400. The second encapsulation layer 510 may cover the second device layer 400. The third electrode 410, the fourth electrode 430, and the second element part 420 may be buried by the second encapsulation layer 510. The second encapsulation layer 510 may include aluminum oxide (Al 2 O 3). The second encapsulation layer 510 may protect the second device layer 400 from external oxygen or moisture.

The second passivation layer 520 may be disposed on the second encapsulation layer 510. The second protective layer 520 may directly contact the second encapsulation layer 510. The second protective layer 520 may include an inorganic thin film or an organic thin film. According to an embodiment, the second protective layer 520 may be a multilayer thin film including the above materials. The second protective layer 520 may protect the second device layer 400 from the etchant during the manufacturing process of the optoelectronic device.

The third device layer 600 may be disposed on the second passivation layer 520. The third device layer 600 may include a fifth electrode 610, a sixth electrode 630, and a third device portion 620. The third device unit 620 may be disposed between the fifth electrode 610 and the sixth electrode 630. For example, the fifth electrode 610 may extend on the bottom surface of the third device portion 620, and the sixth electrode 630 may extend on the top surface of the third device portion 620. Alternatively, the fifth electrode 610, the third element portion 620, and the sixth electrode 630 may be disposed in parallel on the substrate 100, or the third element portion 620 may be formed on the fifth electrode 610. It may be disposed over the upper surface of the sixth electrode 630 from the upper surface. The third device unit 620 may be electrically connected to the fifth electrode 610 and the sixth electrode 630. For example, the fifth electrode 610 may be an anode of the third device portion 620, and the sixth electrode 630 may be a cathode of the third device portion 620.

The third device unit 620 may include a light emitting unit. The light emitting unit may be not particularly limited as long as it is typically used for an organic light emitting diode or a quantum dot diode. The light emitting unit may generate light using recombination of holes or electrons supplied from the outside. Alternatively, the third device unit 620 may be a device such as a light emitting diode, a solar cell, a photo detector, or a transistor.

The fifth electrode 610 and the sixth electrode 630 may be patterned conductive layers. For example, the fifth electrode 610 may extend from one end of the third element portion 620 to the outside of the substrate 100. The sixth electrode 630 may extend to the outside of the substrate 100 from the other end of the third device unit 620. Unlike shown, the side surface of the fifth electrode 610 may be inclined with respect to the top surface of the second protective layer 520. The fifth electrode 610 and the sixth electrode 630 may be transparent electrodes.

The third encapsulation layer 710 may be disposed on the third device layer 600. The third encapsulation layer 710 may cover the third device layer 600. The fifth electrode 610, the sixth electrode 630, and the third element part 620 may be buried by the third encapsulation layer 710. The third encapsulation layer 710 may include aluminum oxide (Al 2 O 3). The third encapsulation layer 710 may protect the third device layer 600 from external oxygen or moisture.

3 to 13 are perspective views illustrating a method of manufacturing an optoelectronic device according to embodiments of the present invention.

2 and 3, the first device layer 200 may be formed on the substrate 100. For example, after the conductive film is deposited on the substrate 100, a portion of the first electrode 210 and the second electrode 230 may be formed by patterning the conductive film. When the first device unit 220 includes a light emitting unit, the first device unit 220 may be formed by depositing an organic layer on a shadow mask on the substrate 100. Thereafter, a conductive layer is formed on the first device portion 220 using a shadow mask, so that the remaining portion 230a of the second electrode 230 extending on the top surface of the first device portion 220 is formed. Can be.

2 and 4, a first encapsulation layer 310 may be formed on the first device unit 220. The first encapsulation layer 310 may be formed using atomic layer deposition (ALD). In this case, in order to prevent damage to the first device unit 220, the process of forming the first encapsulation layer 310 may be performed at a low temperature (eg, a temperature of 100 ° C. or less). The first encapsulation layer 310 may cover the first device layer 200.

The first passivation layer 320 may be formed on the first encapsulation layer 310. The first protective layer 320 may include physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), spin coating, and spray coating. It may be formed using a spray coating, inkjet printing process, film lamination process.

2 and 5, a first conductive layer 440 may be deposited on the first passivation layer 320. Deposition of the first conductive layer 440 may include a sputtering process. The first conductive layer 440 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide, graphene, metal nanowires, a conductive polymer, or a thin metal film. The metal thin film may include gold (Au), silver (Ag), copper (Gu), aluminum (Al), nickel (Ni), platinum (Pt), or palladium (Pd).

The first photosensitive film 450 may be coated on the first conductive film 440. The first photoresist layer 450 may include a photoresist material.

2 and 6, the first photoresist layer 450 may be patterned. For example, a first photoresist defining an area in which the third electrode 410 and the fourth electrode 430 are to be formed by performing an exposure process using the first photo mask 460 on the first photoresist film 450. The pattern 455 may be formed. The width of the first photoresist pattern 455 may be 1 um to 3000 um. In example embodiments, a baking process may be performed on the first photoresist pattern 455 to cure the first photoresist pattern 455.

2 and 7, the first conductive layer 440 may be patterned. For example, the first conductive layer 440 may be etched using the first photoresist pattern 455 as an etching mask to form portions of the third electrode 410 and the fourth electrode 430. The etching process of the first conductive layer 440 may be wet etching or dry etching. During the etching process of the first conductive layer 440, an etchant for etching may be used or a physical impact may be applied to the first conductive layer 440. In this case, the first device unit 220 of the first device layer 200 may be protected by the first protective layer 320. The etchant for wet etching may include an acidic solution. According to the exemplary embodiment, the side surface 410a of the third electrode 410 formed through the etching process may be inclined with respect to the top surface of the first passivation layer 320. This is because the etching becomes harder toward the lower portion of the first conductive layer 440 according to the process dispersion, and the lower portion of the third electrode 410 may protrude from the side surface of the first photoresist pattern 455.

2 and 8, the first photoresist pattern 455 may be removed. The first photoresist pattern 455 may be removed using a ketone process solvent.

The second device layer 400 may be formed. In detail, the second device unit 420 may be formed on the third electrode 410. When the second device part 420 includes the light emitting part, the second device part 420 may be formed by depositing an organic layer on the shadow mask on the first protective layer 320. Thereafter, a conductive layer is formed on the second device portion 420, so that the remaining portion 430a of the fourth electrode 430 extending on the top surface of the second device portion 420 may be formed.

2 and 9, a second encapsulation layer 510 may be formed on the second device unit 420. The second encapsulation layer 510 may be formed using an atomic layer deposition process (ALD). In this case, in order to prevent damage to the second device unit 420, the process of forming the second encapsulation layer 510 may be performed at a low temperature (eg, a temperature of 100 ° C. or less). The second encapsulation layer 510 may cover the second device layer 400.

The second passivation layer 520 may be formed on the second encapsulation layer 510. The second protective layer 520 may be formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), spin coating, spray coating, and inkjet printing. It may be formed using an inkjet printing, film lamination process (film lamination).

2 and 10, a second conductive layer 640 may be deposited on the second passivation layer 520. Deposition of the second conductive layer 640 may include a sputtering process. The second conductive layer 640 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide, graphene, metal nanowires, conductive polymers, or a thin metal film.

The second photosensitive film 650 may be coated on the second conductive film 640. The second photoresist layer 650 may include a photoresist material.

2 and 11, the second photoresist layer 650 may be patterned. For example, by performing an exposure process on the second photoresist layer 650, a second photoresist pattern 655 may be formed to define a region in which the fifth electrode 610 and the sixth electrode 630 are to be formed. have. According to an embodiment, a baking process may be performed on the second photoresist pattern 655 to cure the second photoresist pattern 655.

The second conductive layer 640 may be patterned. For example, the second conductive layer 640 may be etched using the second photoresist pattern 655 as an etching mask to form a portion of the fifth electrode 610 and the sixth electrode 630. The etching process of the second conductive layer 640 may be wet etching or dry etching. During the etching process of the second conductive layer 640, an etchant for etching may be used or a physical impact may be applied on the second conductive layer 640. In this case, the second device unit 420 may be protected by the second protective layer 520. In example embodiments, a side surface of the fifth electrode 610 formed through the etching process may be inclined with respect to the top surface of the second protective layer 520.

Referring to FIGS. 2 and 12, a third device layer 600 may be formed. In detail, after the second photoresist pattern 655 is removed, the third device unit 620 may be formed on the fifth electrode 610. For example, when the third device unit 620 includes a light emitting unit, the third device unit 620 may be formed by depositing an organic layer on the shadow mask on the second protective layer 520. Subsequently, a conductive layer is formed on the third device portion 620 so that the remaining portion 630a of the sixth electrode 630 extending on the top surface of the third device portion 620 may be formed.

2 and 13, a third encapsulation layer 710 may be formed on the third device portion 620. The third encapsulation layer 710 may be formed using an atomic layer deposition process (ALD). In this case, in order to prevent damage to the third device unit 620, the process of forming the third encapsulation layer 710 may be performed at a low temperature (eg, a temperature of 100 ° C. or less). The third encapsulation layer 710 may cover the third device layer 600.

According to the exemplary embodiments of the present invention, the encapsulation layers 310, 510, and 710 are formed on the device layers 200, 400, and 600, so that the encapsulation layers 310, 510, and 710 are external oxygen. Alternatively, the device layers 200, 400, and 600 may be protected from moisture. That is, the device layers 200, 400, and 600 may not be damaged during the manufacturing process of the optoelectronic device, and a highly reliable optoelectronic device may be manufactured.

In addition, since the first passivation layer 320 is formed on the first encapsulation layer 310, the first device under the first passivation layer 320 even if an etching process is performed on the first passivation layer 320. The unit 220 may not be damaged. Accordingly, in the later process, the third electrode 410 of the second device layer 400 may be formed through the etching process on the first protective layer 320, and the third electrode 410 of the fine pattern may be formed. Can be. That is, it is possible to manufacture a photoelectronic device of a fine size.

Hereinafter, as a specific example according to the present invention, a part of the optoelectronic device was manufactured as follows.

Example  One

The substrate used glass. The first device layer, the second device layer, and the third device layer were fabricated so as to be blue, green, and red pixels, respectively. The first electrode was formed using ITO, and the second electrode formed an Ag thin film having a thickness of 25 nm. The first element portion was formed of an organic light emitting diode emitting blue light. The first encapsulation layer was formed of Al 2 O 3, and the first protective layer was formed of SiN x.

A first conductive film was formed on the first protective layer. The first conductive film was formed of IZO on the first protective layer by the RF sputtering method. The first conductive film was deposited at an Ar plasma atmosphere at a temperature of 45 ° C. Thereafter, a photolithography process was performed on the first conductive layer to form a third electrode. In detail, after forming the first photoresist pattern on the first conductive film, a baking process was performed at a temperature of 90 ° C. The third electrode was formed by etching the first photoresist pattern with the etching mask and the first conductive layer with the acidic etching solution. Subsequently, the first photoresist pattern on the third electrode was removed with acetone, which is a kato-based process solvent. Here, the third electrode was formed in a straight shape for the convenience of experiment and comparison.

Example  2

It was formed in the same manner as in Example 1, but the first protective layer was formed of polyethylene.

Comparative example

Formed in the same manner as in Example 1, but did not form a first protective layer. That is, after the first conductive film is formed on the first encapsulation layer, a third electrode is formed by performing a photolithography process on the first conductive film.

14A and 14B are SEM photographs of the third electrode of Example 1. FIG.

As shown in FIGS. 14A and 14B, it can be seen that the third electrode of Example 1 is formed such that its side surface is inclined to the upper surface of the first protective layer.

The device stability of Example 1, Example 2, and the comparative example was tested. After the formation of the third electrode, the damage of the third electrode before and after the removal of the first photoresist pattern was measured.

The comparative example was exposed to the process solvent for about 10 minutes equal to the actual process time. In the comparative example not including the first protective layer, it was confirmed that the first device portion was damaged by the process solvent during the removal process of the first photoresist pattern.

Examples 1 and 2 were exposed to process solvents for about 1 hour with a long actual process timeline. In Example 1 including the first protective layer, it was confirmed that the first device portion was not damaged by the process solvent during the removal process of the first photoresist pattern.

Driving characteristics of the optoelectronic device manufactured according to Example 1 were measured. 15 is a color coordinate of Example 1. FIG.

Referring to FIG. 15, the optical properties of Example 1 were measured based on about 500 nits of light. When the 1st element layer, the 2nd element layer, and the 3rd element layer were respectively driven, it can be seen that blue, green, and red light emits light, respectively.

The color reproducibility of Example 1 was calculated based on the measured color coordinates, and was found to be a high value of 135.1%. When voltages of 3.3 V, 2.5 V, and 4.5 V were applied to the first device layer, the second device layer, and the third device layer, respectively, the luminance of light emitted by Example 1 was about 507.1 nits.

In addition, when the voltage of the third element layer emitting red light is increased while driving the first element layer and the second element layer emitting blue and green light, the color coordinates are indicated by arrows in FIG. 20. You can see the shift from blue to green to red.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. You will understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

100 substrate 200 first device layer
310: first encapsulation layer 320: first protective layer
400: second element layer 510: second encapsulation layer
520: second protective layer 600: third element layer
710: first encapsulation layer

Claims (10)

Forming a first device layer comprising a first electrode, a second electrode, and a light emitting portion disposed between the first electrode and the second electrode;
Forming a first encapsulation layer covering the first device layer on the light emitting part;
Forming a first protective layer on the first encapsulation layer; And
Forming a second device layer on the first protective layer,
Forming the second device layer is:
Applying a first conductive film on the first protective layer; And
Forming a third electrode by etching the first conductive film.
The method of claim 1,
And the first protective layer is in direct contact with the top surface of the first encapsulation layer. The method of claim 1,
The first encapsulation layer is a method of manufacturing an optoelectronic device containing aluminum oxide (Al2O3). The method of claim 1,
The first protective layer is an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx), or polyethylene, polypropylene, polyethyleneterephthalate, teflon, polyvinylidene fluoride (Polyvinylidene fluoride (PVDF), polyetherether ketone (polyetherether ketone) or a method for producing an optoelectronic device comprising an organic material, such as polyphenylene sulfide (polyphenylene sulfide). The method of claim 1,
Forming the second device layer is:
After forming the third electrode, forming an element portion on the third electrode; And
Forming a fourth electrode on the device portion,
And after forming the second device layer, forming a second encapsulation layer covering the second device layer on the device portion. The method of claim 5,
The device unit comprises a light emitting diode, a solar cell, a photo detector or a transistor manufacturing method of the optoelectronic device. The method of claim 5,
Further comprising forming a third device layer on the second device layer,
Forming the third device layer is:
Forming a second protective layer on the second encapsulation layer, and then applying a second conductive film on the second protective layer; And
And forming a fifth electrode by etching the second conductive layer. The method of claim 1,
The second electrode and the third electrode manufacturing method of the optoelectronic device comprising a transparent electrode. The method of claim 1,
The side surface of the third electrode is inclined with respect to the upper surface of the first protective layer manufacturing method of the optoelectronic device. The method of claim 1,
Etching the first conductive layer includes a photolithography process.

Images