KR20190079992A - Cleaning solution composition - Google Patents
Cleaning solution composition Download PDFInfo
- Publication number
- KR20190079992A KR20190079992A KR1020170182141A KR20170182141A KR20190079992A KR 20190079992 A KR20190079992 A KR 20190079992A KR 1020170182141 A KR1020170182141 A KR 1020170182141A KR 20170182141 A KR20170182141 A KR 20170182141A KR 20190079992 A KR20190079992 A KR 20190079992A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- cleaning liquid
- liquid composition
- group
- polyoxyethylene
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 103
- 239000000203 mixture Substances 0.000 title claims abstract description 77
- -1 alcohol amine compound Chemical class 0.000 claims abstract description 107
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000004094 surface-active agent Substances 0.000 claims abstract description 16
- 239000002738 chelating agent Substances 0.000 claims abstract description 15
- 150000007524 organic acids Chemical class 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 11
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims description 80
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 150000005215 alkyl ethers Chemical class 0.000 claims description 12
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 10
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 10
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 10
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 10
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims description 9
- 229920001213 Polysorbate 20 Polymers 0.000 claims description 9
- 239000002736 nonionic surfactant Substances 0.000 claims description 9
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 claims description 9
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 claims description 9
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 150000008378 aryl ethers Chemical class 0.000 claims description 8
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 8
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims description 8
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 claims description 8
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 8
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 7
- 229940068977 polysorbate 20 Drugs 0.000 claims description 7
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 7
- QJSFUOBKBXVTMN-UHFFFAOYSA-N C=C.P(O)(O)=O Chemical compound C=C.P(O)(O)=O QJSFUOBKBXVTMN-UHFFFAOYSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 125000001931 aliphatic group Chemical group 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- YDSWCNNOKPMOTP-UHFFFAOYSA-N mellitic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(O)=O)=C(C(O)=O)C(C(O)=O)=C1C(O)=O YDSWCNNOKPMOTP-UHFFFAOYSA-N 0.000 claims description 6
- TXXHDPDFNKHHGW-UHFFFAOYSA-N muconic acid Chemical compound OC(=O)C=CC=CC(O)=O TXXHDPDFNKHHGW-UHFFFAOYSA-N 0.000 claims description 6
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims description 6
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 claims description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 6
- 229920006395 saturated elastomer Polymers 0.000 claims description 6
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 6
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims description 6
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 claims description 6
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 6
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 235000011054 acetic acid Nutrition 0.000 claims description 5
- 239000001361 adipic acid Substances 0.000 claims description 5
- 235000011037 adipic acid Nutrition 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000003002 pH adjusting agent Substances 0.000 claims description 5
- 229920001451 polypropylene glycol Polymers 0.000 claims description 5
- 229960001124 trientine Drugs 0.000 claims description 5
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 4
- 235000021314 Palmitic acid Nutrition 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 claims description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- YAQXGBBDJYBXKL-UHFFFAOYSA-N iron(2+);1,10-phenanthroline;dicyanide Chemical compound [Fe+2].N#[C-].N#[C-].C1=CN=C2C3=NC=CC=C3C=CC2=C1.C1=CN=C2C3=NC=CC=C3C=CC2=C1 YAQXGBBDJYBXKL-UHFFFAOYSA-N 0.000 claims description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- 239000011976 maleic acid Substances 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- SZHOJFHSIKHZHA-UHFFFAOYSA-N tridecanoic acid Chemical compound CCCCCCCCCCCCC(O)=O SZHOJFHSIKHZHA-UHFFFAOYSA-N 0.000 claims description 4
- XVOUMQNXTGKGMA-OWOJBTEDSA-N (E)-glutaconic acid Chemical compound OC(=O)C\C=C\C(O)=O XVOUMQNXTGKGMA-OWOJBTEDSA-N 0.000 claims description 3
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 claims description 3
- PVXVWWANJIWJOO-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-N-ethylpropan-2-amine Chemical compound CCNC(C)CC1=CC=C2OCOC2=C1 PVXVWWANJIWJOO-UHFFFAOYSA-N 0.000 claims description 3
- KQIXMZWXFFHRAQ-UHFFFAOYSA-N 1-(2-hydroxybutylamino)butan-2-ol Chemical compound CCC(O)CNCC(O)CC KQIXMZWXFFHRAQ-UHFFFAOYSA-N 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 claims description 3
- MXYOPVWZZKEAGX-UHFFFAOYSA-N 1-phosphonoethylphosphonic acid Chemical compound OP(=O)(O)C(C)P(O)(O)=O MXYOPVWZZKEAGX-UHFFFAOYSA-N 0.000 claims description 3
- FRPZMMHWLSIFAZ-UHFFFAOYSA-N 10-undecenoic acid Chemical compound OC(=O)CCCCCCCCC=C FRPZMMHWLSIFAZ-UHFFFAOYSA-N 0.000 claims description 3
- QZXIXSZVEYUCGM-UHFFFAOYSA-N 2-aminopropan-2-ol Chemical compound CC(C)(N)O QZXIXSZVEYUCGM-UHFFFAOYSA-N 0.000 claims description 3
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004135 Bone phosphate Substances 0.000 claims description 3
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 claims description 3
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 claims description 3
- GHVNFZFCNZKVNT-UHFFFAOYSA-N Decanoic acid Natural products CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 claims description 3
- 229940120146 EDTMP Drugs 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 claims description 3
- 239000005639 Lauric acid Substances 0.000 claims description 3
- QMMZSJPSPRTHGB-UHFFFAOYSA-N MDEA Natural products CC(C)CCCCC=CCC=CC(O)=O QMMZSJPSPRTHGB-UHFFFAOYSA-N 0.000 claims description 3
- TXXHDPDFNKHHGW-CCAGOZQPSA-N Muconic acid Natural products OC(=O)\C=C/C=C\C(O)=O TXXHDPDFNKHHGW-CCAGOZQPSA-N 0.000 claims description 3
- HMNDRWDQGZZYIC-UHFFFAOYSA-N [2-(phosphonomethylamino)ethylamino]methylphosphonic acid Chemical compound OP(O)(=O)CNCCNCP(O)(O)=O HMNDRWDQGZZYIC-UHFFFAOYSA-N 0.000 claims description 3
- 229940091181 aconitic acid Drugs 0.000 claims description 3
- 125000005037 alkyl phenyl group Chemical group 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- YOUBLKPZGAHMAH-UHFFFAOYSA-N azane;butan-2-ol Chemical compound N.CCC(C)O YOUBLKPZGAHMAH-UHFFFAOYSA-N 0.000 claims description 3
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 claims description 3
- KHAVLLBUVKBTBG-UHFFFAOYSA-N caproleic acid Natural products OC(=O)CCCCCCCC=C KHAVLLBUVKBTBG-UHFFFAOYSA-N 0.000 claims description 3
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 claims description 3
- 229940073499 decyl glucoside Drugs 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- 229930182478 glucoside Natural products 0.000 claims description 3
- 229940048848 lauryl glucoside Drugs 0.000 claims description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 3
- 239000000347 magnesium hydroxide Substances 0.000 claims description 3
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- 230000009972 noncorrosive effect Effects 0.000 claims description 3
- 229960002446 octanoic acid Drugs 0.000 claims description 3
- 235000019260 propionic acid Nutrition 0.000 claims description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 3
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 claims description 3
- MAZWDMBCPDUFDJ-UHFFFAOYSA-N trans-Traumatinsaeure Natural products OC(=O)CCCCCCCCC=CC(O)=O MAZWDMBCPDUFDJ-UHFFFAOYSA-N 0.000 claims description 3
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 claims description 3
- MAZWDMBCPDUFDJ-VQHVLOKHSA-N traumatic acid Chemical compound OC(=O)CCCCCCCC\C=C\C(O)=O MAZWDMBCPDUFDJ-VQHVLOKHSA-N 0.000 claims description 3
- KQTIIICEAUMSDG-UHFFFAOYSA-N tricarballylic acid Chemical compound OC(=O)CC(C(O)=O)CC(O)=O KQTIIICEAUMSDG-UHFFFAOYSA-N 0.000 claims description 3
- 229960002703 undecylenic acid Drugs 0.000 claims description 3
- 229940005605 valeric acid Drugs 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 235000003704 aspartic acid Nutrition 0.000 claims description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 235000005985 organic acids Nutrition 0.000 claims description 2
- KHOSIPSPBMXIRQ-UHFFFAOYSA-N tridecanoic acid Chemical compound CCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCC(O)=O KHOSIPSPBMXIRQ-UHFFFAOYSA-N 0.000 claims description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims 2
- XHAZMZWXAOBLQG-UHFFFAOYSA-N (1-hydroxy-1-phosphonopropyl)phosphonic acid Chemical compound CCC(O)(P(O)(O)=O)P(O)(O)=O XHAZMZWXAOBLQG-UHFFFAOYSA-N 0.000 claims 1
- SDFWKDLGKCDGMU-UHFFFAOYSA-N 1-(2-methylhydrazinyl)butan-1-ol Chemical compound CCCC(NNC)O SDFWKDLGKCDGMU-UHFFFAOYSA-N 0.000 claims 1
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 claims 1
- 239000005711 Benzoic acid Substances 0.000 claims 1
- 102100032373 Coiled-coil domain-containing protein 85B Human genes 0.000 claims 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims 1
- 101000868814 Homo sapiens Coiled-coil domain-containing protein 85B Proteins 0.000 claims 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims 1
- 235000010233 benzoic acid Nutrition 0.000 claims 1
- 235000015165 citric acid Nutrition 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 claims 1
- 235000013922 glutamic acid Nutrition 0.000 claims 1
- 239000004220 glutamic acid Substances 0.000 claims 1
- 239000004310 lactic acid Substances 0.000 claims 1
- 235000014655 lactic acid Nutrition 0.000 claims 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims 1
- 229960004889 salicylic acid Drugs 0.000 claims 1
- 230000000694 effects Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910021642 ultra pure water Inorganic materials 0.000 description 7
- 239000012498 ultrapure water Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 229940043276 diisopropanolamine Drugs 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HNLXNOZHXNSSPN-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[4-(2,4,4-trimethylpentan-2-yl)phenoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCOCCOCCOCCOCCOCCOCCO)C=C1 HNLXNOZHXNSSPN-UHFFFAOYSA-N 0.000 description 2
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 2
- SZHQPBJEOCHCKM-UHFFFAOYSA-N 2-phosphonobutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(P(O)(O)=O)(C(O)=O)CC(O)=O SZHQPBJEOCHCKM-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920002565 Polyethylene Glycol 400 Polymers 0.000 description 2
- 229920001219 Polysorbate 40 Polymers 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 2
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 2
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- LAPRIVJANDLWOK-UHFFFAOYSA-N laureth-5 Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCO LAPRIVJANDLWOK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- YYELLDKEOUKVIQ-UHFFFAOYSA-N octaethyleneglycol monododecyl ether Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCO YYELLDKEOUKVIQ-UHFFFAOYSA-N 0.000 description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 description 2
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 2
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 2
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 2
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 2
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 2
- 229940101027 polysorbate 40 Drugs 0.000 description 2
- 229940113124 polysorbate 60 Drugs 0.000 description 2
- 229920000053 polysorbate 80 Polymers 0.000 description 2
- 229940068968 polysorbate 80 Drugs 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- CMOPTRVGTYGFNI-UHFFFAOYSA-N 2-amino-2-methylpropan-1-ol;2-[bis(2-hydroxyethyl)amino]ethanol Chemical compound CC(C)(N)CO.OCCN(CCO)CCO CMOPTRVGTYGFNI-UHFFFAOYSA-N 0.000 description 1
- GOJUJUVQIVIZAV-UHFFFAOYSA-N 2-amino-4,6-dichloropyrimidine-5-carbaldehyde Chemical group NC1=NC(Cl)=C(C=O)C(Cl)=N1 GOJUJUVQIVIZAV-UHFFFAOYSA-N 0.000 description 1
- JYCQQPHGFMYQCF-UHFFFAOYSA-N 4-tert-Octylphenol monoethoxylate Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCO)C=C1 JYCQQPHGFMYQCF-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- YRZBVIGIGZTWGT-UHFFFAOYSA-N [2-(diphosphonoamino)ethyl-phosphonoamino]phosphonic acid Chemical compound OP(O)(=O)N(P(O)(O)=O)CCN(P(O)(O)=O)P(O)(O)=O YRZBVIGIGZTWGT-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- DLEPCXYNAPUMDZ-UHFFFAOYSA-N butan-2-ylphosphonic acid Chemical compound CCC(C)P(O)(O)=O DLEPCXYNAPUMDZ-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- GSGDTSDELPUTKU-UHFFFAOYSA-N nonoxybenzene Chemical compound CCCCCCCCCOC1=CC=CC=C1 GSGDTSDELPUTKU-UHFFFAOYSA-N 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C11D11/0047—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0047—Other compounding ingredients characterised by their effect pH regulated compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 세정액 조성물에 관한 것으로서, 반도체 디바이스의 화학기계적 연마 공정 후 사용되는 세정액 조성물에 관한 것이다.The present invention relates to a cleaning composition, and more particularly, to a cleaning composition used after a chemical mechanical polishing process of a semiconductor device.
고성능 및 소형화와 같은 시장 요구는 마이크로 전자 장치상의 더욱 집적된 반도체 소자에 대한 요구를 초래되었다. 예를 들어, 우수한 회로 패턴을 형성하기 위한 고수준의 평탄화 기술이 필요하고, 이 때 웨이퍼 표면을 연마하는 화학 기계적 연마(chemical mechanical polishing; CMP) 단계는 알루미나 또는 실리카의 미립자를 함유하는 CMP 슬러리 조성물을 사용한다. 그러나, 이 CMP 단계에서, 연마 미립자, CMP 슬러리 조성물 중 알루미나 및 실리카, 연마를 촉진하기 위해 첨가된 철 니트레이트 수용액, 금속의 부식을 억제하기 위해 첨가된 방식제, 및 연마된 금속 배선 및 상기 금속 배선의 측면에 사용된 금속의 잔사 등이 웨이퍼 표면에 남아 반도체의 전기적 성질에 대한 부작용인 단락을 가질 수 있다. 따라서, 다음 제조 단계로 진행하기 전에 반도체 장치의 제조과정에 발생하는 입자, 금속원자 등의 오염을 제거하여 장치의 신뢰성을 향상시키기 위하여 세정 과정을 수행할 필요가 있다. CMP 후 세정제로서 불산 수용액과 과산화수소·암모니아 수용액을 조합한 세정액, 또는 불산 수용액과 과산화수소·염산을 조합한 세정액을 이용하여, 반도체 웨이퍼를 세정하는 방법이 알려져 있다. 그러나, 이들 방법으로는, 금속 배선에 대한 부식과 식각을 유발하는 단점과 신체 접촉 시 심각한 손상을 발생시켜 취급에 특별한 주의가 필요하고, 높은 표면 장력과 접촉각으로 인하여 미세 잔여물의 제거 효과가 낮은 문제점이 있다.Market demands such as high performance and miniaturization have resulted in a demand for more integrated semiconductor devices on microelectronic devices. For example, there is a need for a high level planarization technique to form a good circuit pattern, wherein a chemical mechanical polishing (CMP) step of polishing the wafer surface is performed using a CMP slurry composition containing microparticles of alumina or silica use. However, in this CMP step, abrasive fine particles, alumina and silica in the CMP slurry composition, an aqueous solution of iron nitrate added to promote polishing, an anticorrosion agent added to suppress the corrosion of the metal, A residue of a metal used on the side of the wiring remains on the wafer surface and can have a short-circuited side effect on the electrical properties of the semiconductor. Therefore, it is necessary to perform a cleaning process in order to improve the reliability of the device by removing contamination of particles, metal atoms, and the like generated in the manufacturing process of the semiconductor device before proceeding to the next manufacturing step. There is known a method of cleaning a semiconductor wafer by using a cleaning liquid that is a combination of an aqueous solution of hydrofluoric acid and an aqueous ammonia solution or a cleaning liquid that is a combination of an aqueous solution of hydrofluoric acid and hydrogen peroxide and hydrochloric acid as a cleaning agent after CMP. However, these methods are disadvantageous in that they cause corrosion and etching on the metal wiring and cause serious damage in the contact with the body, so that special care must be taken in handling, and there is a problem in that the removal effect of the fine residue is low due to high surface tension and contact angle .
본 발명은 상술한 문제점을 해결하기 위한 것으로, 본 발명의 목적은, 세정액의 표면 장력과 접촉각을 개선하여 미세 잔여물에 대한 우수한 세정력을 갖는, 세정액 조성물을 제공하는 것이다.An object of the present invention is to provide a cleaning liquid composition having improved cleaning performance against fine residues by improving the surface tension and the contact angle of the cleaning liquid.
그러나, 본 발명이 해결하고자 하는 과제는 이상에서 언급한 과제로 제한되지 않으며, 언급되지 않은 또 다른 과제들은 아래의 기재로부터 통상의 기술자에게 명확하게 이해될 수 있을 것이다.However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.
본 발명의 하나의 양상은, According to one aspect of the present invention,
유기산; 포스폰산계 킬레이트제; 알코올 아민계 화합물; 및 계면활성제;를 포함하는, 세정액 조성물에 관한 것이다.Organic acids; Phosphonic acid chelating agents; Alcohol amine compounds; And a surfactant.
본 발명의 일 실시예에 따라, 상기 유기산은, 1개의 카르복실기를 갖는 직쇄상의 포화 카르복실산; 포화 지방족 디카르복실산; 불포화 지방족 디카르복실산; 방향족 디카르복실산; 및 3개 이상의 카르복실기를 갖는 카르복실산;으로 이루어진 군으로부터 선택된 1종 이상을 포함하는 것이고,According to one embodiment of the present invention, the organic acid is a straight chain saturated carboxylic acid having one carboxyl group; Saturated aliphatic dicarboxylic acids; Unsaturated aliphatic dicarboxylic acids; Aromatic dicarboxylic acids; And a carboxylic acid having at least three carboxyl groups, and at least one compound selected from the group consisting of
상기 1개의 카르복실기를 갖는 직쇄상의 포화 카르복실산은, 포름산(formic acid), 아세트산(acetic acid), 프로피온산(propionic acid), 부티르산(butyric acid), 발레르산(valeric acid), 헥사노산(hexanoic acid), 헵타노산(heptanoic acid), 카프릴산(caprylic acid), 노나노산(nonanoic acid), 데카노산(decanoic acid), 운데실산(undecylenic acid), 라우릴산(lauric acid), 트리데실산(tridecylic acid), 미리스트산(myristic acid), 펜타데카노산(pentadecanoic acid) 및 팔미트산(palmitic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함하고, 상기 포화 지방족 디카르복실산은, 옥살산(oxalic acid), 말론산(malonic acid), 숙신산(succinic acid), 글루타르산(glutaric acid), 아디프산(adipic acid), 피멜산(pimelic acid), 수베르산(suberic acid), 아젤라산(azelaic acid) 및 세바식산(sebacic acid)으로 이루어진 군에서 선택된 1종 이상을 포함하고, 상기 불포화 지방족 디카르복실산은, 말레인산(maleic acid), 푸마르산(fumaric acid), 글루타콘산(glutaconic acid), 트라우마트산(traumatic acid) 및 무콘산(muconic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함하고, 상기 방향족 디카르복실산은, 프탈산(phthalic acid), 이소프탈산(isophthalic acid) 및 테레프탈산(terephthalic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함하고, 상기 3개 이상의 카르복실기를 갖는 카르복실산은, 시트르산(citric acid), 이소시트르산(isocitric acid), 아콘산(aconitic acid), 카르발릴산(carballylic acid), 트리베스산(tribasic acid) 및 멜리트산(mellitic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함하는 것일 수 있다.The straight chain saturated carboxylic acid having one carboxyl group is preferably selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid ), Heptanoic acid, caprylic acid, nonanoic acid, decanoic acid, undecylenic acid, lauric acid, tridecylic acid tridecylic acid, myristic acid, pentadecanoic acid, and palmitic acid, and the saturated aliphatic dicarboxylic acid is at least one selected from the group consisting of oxalic acid The present invention relates to a process for the preparation of a compound of formula (I) wherein R is selected from the group consisting of an acid, a malonic acid, a succinic acid, a glutaric acid, an adipic acid, a pimelic acid, a suberic acid, azelaic acid, sebacic acid, and the like. The unsaturated aliphatic dicarboxylic acid may be at least one selected from the group consisting of maleic acid, fumaric acid, glutaconic acid, traumatic acid and muconic acid. Wherein the aromatic dicarboxylic acid comprises at least one member selected from the group consisting of phthalic acid, isophthalic acid and terephthalic acid, and the carboxylic acid having three or more carboxyl groups is selected from the group consisting of One selected from the group consisting of citric acid, isocitric acid, aconitic acid, carballylic acid, tribasic acid and mellitic acid. Or more.
본 발명의 일 실시예에 따라, 상기 유기산은, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%일 수 있다.According to one embodiment of the present invention, the organic acid may be 0.00001 wt% to 10 wt% of the cleaning liquid composition.
본 발명의 일 실시예에 따라, 상기 포스폰산계 킬레이트제는, 에틸리덴디포스폰산, 1-히드록시에틸리덴-1,1'-디포스폰산(HEDPO), 1-히드록시프로필리덴-1,1'-디포스폰산, 1-히드록시부틸리덴-1,1'-디포스폰산, 에틸아미노비스(메틸렌포스폰산), 도데실아미노비스(메틸렌포스폰)산, N,N,N',N'-에틸렌디아민테트라키스(메틸렌포스폰산) (N,N,N',N'-Ethylenediaminetetrakis (methylenephosphonic acid)), 2-포스포노-부탄-1,2,4-트리카르복실산(2-phosphono-butane-1,2,4-tricarboxylic acid, PBTC), 니트릴로트리스(메틸렌포스폰산, NTPO), 에틸렌디아민비스(메틸렌포스폰산, EDDPO), 1,3-프로필렌디아민비스(메틸렌포스폰산), 에틸렌디아민테트라(메틸렌포스폰산, EDTPO), 에틸렌디아민테트라(에틸렌포스폰산, EDTMP), 1,3-프로필렌디아민테트라(메틸렌포스폰산, PDTMP), 1,2-프로필렌디아민테트라(메틸렌포스폰산), 1,2-디아미노프로판테트라(메틸렌포스폰산), 1,6-헥사메틸렌디아민테트라(메틸렌포스폰산), 헥센디아민테트라(메틸렌포스폰산), 디에틸렌트리아민펜타(메틸렌포스폰산, DEPPO), 디에틸렌트리아민펜타(에틸렌포스폰산), 트리에틸렌테트라민헥사(메틸렌포스폰산) 니트로트리스(메틸렌포스폰산) 및 트리에틸렌테트라민헥사(에틸렌포스폰산)으로 이루어진 군에서 선택된 1종 이상을 포함하는 것일 수 있다.According to one embodiment of the present invention, the phosphonic acid-based chelating agent is at least one selected from the group consisting of ethylidene diphosphonic acid, 1-hydroxyethylidene-1,1'-diphosphonic acid (HEDPO), 1- (Methylenephosphonic acid), dodecylaminobis (methylenephosphonic acid), N, N, N'-dicarboxylic acid, 1,1'-diphosphonic acid, 1-hydroxybutylidene- N, N'-ethylenediaminetetrakis (methylenephosphonic acid) (N, N, N ', N'-Ethylenediaminetetrakis (methylenephosphonic acid)), 2-phosphono-butane-1,2,4-tricarboxylic acid (2-phosphono-butane-1,2,4-tricarboxylic acid, PBTC), nitrilotris (methylenephosphonic acid, NTPO), ethylenediamine bis (methylenephosphonic acid, EDDPO), 1,3-propylenediamine bis Propylene diamine tetra (methylene phosphonic acid, PDTMP), 1,2-propylene diamine tetra (methylene phosphonic acid, EDTA), ethylenediamine tetra Phosphonic acid ), 1,2-diaminopropane tetra (methylene phosphonic acid), 1,6-hexamethylene diamine tetra (methylene phosphonic acid), hexene diamine tetra (methylene phosphonic acid), diethylene triamine penta (methylene phosphonic acid, DEPPO At least one member selected from the group consisting of diethylene triamine penta (ethylene phosphonic acid), triethylene tetramine hexa (methylene phosphonic acid) nitrotris (methylene phosphonic acid) and triethylenetetramine hexa (ethylene phosphonic acid) May include.
본 발명의 일 실시예에 따라 상기 포스산계 킬레이트제는, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%인 것일 수 있다.According to one embodiment of the present invention, the phosphoric acid type chelating agent may be 0.00001 wt% to 10 wt% of the cleaning liquid composition.
본 발명의 일 실시예에 따라, 상기 알코올 아민계 화합물은, 모노에탄올아민(MEA), 모노-n-프로판올아민, 모노이소프로판올아민, 모노-n-부탄올아민, 모노펜타놀아민, 모노헥사놀아민, 모노헵타놀아민, 모노옥타놀아민, 모노노나놀아민, 모노데카놀아민, 디에탄올아민(DEA), 디프로판올아민, 디이소프로판올아민(DIPA), 디부탄올아민, 디펜타놀아민, 디헥사놀아민, 디헵타놀아민, 디옥타놀아민, 디노나놀아민, 디데카놀아민, N-메틸디에탄올아민(MDEA), 트리에탄올아민(TEA), 트리이소프로판올아민(TIPA), 트리펜타놀아민, 트리헥사놀아민, 트리헵타놀아민, 트리옥타놀아민, 트리노나놀아민, 트리데카놀아민, 2-아미노-2-메틸-프로판올(AMP), 1-아미노이소프로판올(AIP), 2-아미노-1-프로판올, N-메틸아미노에탄올(N-MAE), 3-아미노-1-프로판올, 4-아미노-1-부탄올, 2-(2-아미노에톡시)-1-에탄올(AEE) 및 2-(2-아미노에틸아미노)-1-에탄올로 이루어진 군에서 선택된 1종 이상을 포함하는 것일 수 있다.According to one embodiment of the present invention, the alcohol amine compound is at least one compound selected from the group consisting of monoethanolamine (MEA), mono-n-propanolamine, monoisopropanolamine, mono-n-butanolamine, monopentanolamine, monohexanolamine , Monoheptanolamine, monoheptanolamine, monoheptonamine, monononanolamine, monodecanolamine, diethanolamine (DEA), dipropanolamine, diisopropanolamine (DIPA), dibutanolamine, dipentanolamine, (MDEA), triethanolamine (TEA), triisopropanolamine (TIPA), tripentanolamine (TEA), triethanolamine (AMP), 1-aminoisopropanol (AIP), 2-amino < RTI ID = 0.0 > Propanol, N-methylaminoethanol (N-MAE), 3-amino-1-propanol, Ethoxy) -1-ethanol (AEE) and 2- (2-aminoethylamino) -1-ethanol.
본 발명의 일 실시예에 따라 상기 알코올 아민계 화합물은, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%인 것일 수 있다.According to an embodiment of the present invention, the alcohol amine compound may be 0.00001 wt% to 10 wt% of the cleaning liquid composition.
본 발명의 일 실시예에 따라, 상기 계면활성제는, 비이온성 계면활성제며, 상기 비이온성 계면활성제는, 폴리옥시에틸렌알킬에테르, 폴리옥시에틸렌 아릴 에테르 폴리옥시에틸렌아릴에테르, 폴리옥시에틸렌알케닐에테르, 폴리옥시알킬렌알킬페닐에테르, 폴리옥시알킬렌글리콜, 폴리옥시에틸렌모노알킬레이트, 폴리에틸렌글리콜, 폴리옥시에틸렌 글리콜 알킬 에테르, 옥타에틸렌 글리콜 모노도데실 에테르, 펜타에틸렌 글리콜 모노도데실 에테르, 폴리옥시프로필렌 글리콜 알킬 에테르, 글루코사이드 알킬 에테르, 데실 글루코사이드 알킬 에테르, 라우릴 글루코사이드 알킬 에테르, 옥틸 글루코사이드 알킬 에테르, 폴리옥시에틸렌 글리콜 알킬페놀 에테르, 글리세롤 알킬 에스터(Glycerol alkyl esters), 폴리에틸렌 글리콜 소르비탄 알킬에스터 (Polyoxyethylene glycol sorbitan alkyl esters), 폴리소르베이트 20, 40, 60, 80 (Polysorbate 20, 40, 60, 80), 소르비탄 알킬 에스터(Sorbitan alkyl esters), 및 (폴리옥시에틸렌ㆍ폴리옥시프로필렌) 공중합체로 이루어진 군에서 선택된 1종 이상을 포함하는 것일 수 있다.According to one embodiment of the present invention, the surfactant is a nonionic surfactant, and the nonionic surfactant is selected from the group consisting of polyoxyethylene alkyl ether, polyoxyethylene aryl ether polyoxyethylene aryl ether, polyoxyethylene alkenyl ether , Polyoxyalkylene alkyl phenyl ether, polyoxyalkylene glycol, polyoxyethylene monoalkylate, polyethylene glycol, polyoxyethylene glycol alkyl ether, octaethylene glycol monododecyl ether, pentaethylene glycol monododecyl ether, polyoxyethylene But are not limited to, propylene glycol alkyl ethers, glucoside alkyl ethers, decyl glucoside alkyl ethers, lauryl glucoside alkyl ethers, octyl glucoside alkyl ethers, polyoxyethylene glycol alkyl phenol ethers, glycerol alkyl esters, polyethylene glycol sorbitan alkyl esters hylene glycol sorbitan alkyl esters, polysorbate 20, 40, 60 and 80 (Polysorbate 20, 40, 60 and 80), sorbitan alkyl esters, and (polyoxyethylene / polyoxypropylene) And at least one selected from the group consisting of
본 발명의 일 실시예에 따라, 상기 계면활성제는, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%인 것일 수 있다.According to one embodiment of the present invention, the surfactant may be 0.00001 wt% to 10 wt% of the cleaning liquid composition.
본 발명의 일 실시예에 따라, 산성 물질 또는 염기성 물질을 포함하는 pH 조절제;를 더 포함하고, 상기 산성 물질은, 질산, 염산, 인산, 황산, 불산, 브롬산, 요오드산, 포름산, 말론산, 말레인산, 옥살산, 초산, 아디프산, 구연산, 아디프산, 아세트산, 프로피온산, 푸마르산, 유산, 살리실산, 피멜린산, 벤조산, 숙신산, 프탈산, 부티르산, 글루타르산, 글루타민산, 글리콜산, 락트산, 아스파라긴산, 타르타르산 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함하고, 상기 염기성 물질은, 암모늄메틸프로판올(ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨, 이미다졸 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함하는 것일 수 있다. According to an embodiment of the present invention, there is further provided a pH adjusting agent comprising an acidic or basic substance, wherein the acidic substance is selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, But are not limited to, maleic, oxalic, acetic, adipic, citric, adipic, acetic, propionic, fumaric, lactic, salicylic, pimelic, benzoic, succinic, phthalic, butyric, glutaric, glutamic, glycolic, Wherein the basic substance is selected from the group consisting of ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), hydroxide Ammonium, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogencarbonate, sodium carbonate, imidazole and salts thereof Books may be to include a selected one or more of them.
본 발명의 일 실시예에 따라, 상기 세정액 조성물은, 금속, 금속산화물 또는 이 둘을 갖는 반도체 기판의 연마 후 세정액으로 사용되는 것일 수 있다.According to one embodiment of the present invention, the cleaning liquid composition may be one used as a cleaning liquid for polishing a semiconductor substrate having a metal, a metal oxide, or both.
본 발명의 일 실시예에 따라, 상기 금속은, 텅스텐, 구리, 티타늄, 탄탈, 루테늄 및 코발트로 이루어진 군에서 선택된 1종 이상을 포함하는 것일 수 있다. According to an embodiment of the present invention, the metal may include at least one selected from the group consisting of tungsten, copper, titanium, tantalum, ruthenium, and cobalt.
본 발명의 일 실시예에 따라, 상기 세정액 조성물은, 텅스텐막을 갖는 반도체 기판을 세정하는 것일 수 있다.According to one embodiment of the present invention, the cleaning liquid composition may be a cleaning of a semiconductor substrate having a tungsten film.
본 발명의 일 실시예에 따라, 상기 세정액 조성물은, 암모니아수-프리인 것일 수 있다. According to one embodiment of the present invention, the cleaning liquid composition may be ammonia water-free.
본 발명의 일 실시예에 따라 상기 세정액 조성물의 pH는, 7 내지 13의 범위인 것일 수 있다.According to an embodiment of the present invention, the pH of the cleaning liquid composition may be in the range of 7 to 13.
본 발명의 일 실시예에 따라 상기 세정액 조성물은, 텅스텐막에 비부식성인 것일 수 있다. According to one embodiment of the present invention, the cleaning liquid composition may be non-corrosive to the tungsten film.
본 발명의 일 실시예에 따라, 상기 세정액 조성물은, 텅스텐 연마 후 세정액으로 사용되는 것일 수 있다.According to one embodiment of the present invention, the cleaning liquid composition may be one used as a cleaning liquid after tungsten polishing.
본 발명의 일 실시예에 따라, 상기 세정액 조성물은, 텅스텐(W)의 용출속도가 0.1 (Å/min) 이하인 것일 수 있다. According to an embodiment of the present invention, the cleaning liquid composition may have a dissolution rate of tungsten (W) of 0.1 (Å / min) or less.
본 발명의 일 실시예에 따라 상기 세정액 조성물은, 0 mV 내지 -200 mV의 제타전위를 갖는 것일 수 있다.According to an embodiment of the present invention, the cleaning liquid composition may have a zeta potential of 0 mV to -200 mV.
본 발명의 일 실시예에 따라, 상기 세정액 조성물은, 60 ° 이하의 표면 접촉각을 갖는 것일 수 있다.According to one embodiment of the present invention, the cleaning liquid composition may have a surface contact angle of 60 DEG or less.
본 발명의 일 실시예에 따른 세정액 조성물은, 계면활성제를 적용하여 표면 장력 및 접촉각을 낮추고 안정적인 제타 전위를 제공하여 미세 잔류 입자, 유기 잔류물 및 금속 오염물 등의 잔류물의 세정 효과를 개선시킬 수 있다.The cleaning liquid composition according to an embodiment of the present invention can improve the cleaning effect of residues such as fine particles, organic residues and metal contaminants by applying a surfactant to lower the surface tension and the contact angle and provide a stable zeta potential .
또한, 본 발명의 일 실시예에 따른 세정액 조성물은, 금속을 포함하는 반도체 기판의 손상을 최소화할 수 있다.In addition, the cleaning liquid composition according to an embodiment of the present invention can minimize damage to a semiconductor substrate including a metal.
이하 본 발명의 실시예들을 상세히 설명한다. 본 발명을 설명함에 있어서, 관련된 공지 기능 또는 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략할 것이다. 또한, 본 명세서에서 사용되는 용어들은 본 발명의 바람직한 실시예를 적절히 표현하기 위해 사용된 용어들로서, 이는 사용자, 운용자의 의도 또는 본 발명이 속하는 분야의 관례 등에 따라 달라질 수 있다. 따라서, 본 용어들에 대한 정의는 본 명세서 전반에 걸친 내용을 토대로 내려져야 할 것이다. Hereinafter, embodiments of the present invention will be described in detail. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, terms used in this specification are terms used to appropriately express the preferred embodiments of the present invention, which may vary depending on the user, the intention of the operator, or the practice of the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification.
명세서 전체에서, 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성 요소를 더 포함할 수 있는 것을 의미한다.Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.
본 발명은, 세정액 조성물에 관한 것으로, 본 발명의 일 실시예에 따라, 상기 세정액 조성물은, 유기산; 포스폰산계 킬레이트제; 알코올 아민계 화합물; 및 계면활성제;를 포함할 수 있다.In accordance with one embodiment of the present invention, the cleaning composition comprises: an organic acid; Phosphonic acid chelating agents; Alcohol amine compounds; And a surfactant.
본 발명의 일 예로, 상기 유기산은, 상기 세정액 조성물에서 pH 완충제의 기능을 가지면서, 연마 공정 이후에 잔류하는 연마 미립자, 금속 불순물 등의 세정 효과를 제공할 수 있다. In one embodiment of the present invention, the organic acid can provide cleaning effects such as abrasive fine particles and metal impurities remaining after the polishing process while having the function of a pH buffer in the cleaning composition.
예를 들어, 상기 유기산은, 1개의 카르복실기를 갖는 직쇄상의 포화 카르복실산; 포화 지방족 디카르복실산, 불포화 지방족 디카르복실산; 방향족 디카르복실산; 및 3개 이상의 카르복실기를 갖는 카르복실산;으로 이루어진 군으로부터 선택된 1종 이상을 포함할 수 있으며, 바람직하게는 3개 이상의 카르복실기를 갖는 카르복실산일 수 있다. For example, the organic acid may be a straight chain saturated carboxylic acid having one carboxyl group; Saturated aliphatic dicarboxylic acids, unsaturated aliphatic dicarboxylic acids; Aromatic dicarboxylic acids; And a carboxylic acid having at least three carboxyl groups, and may be at least one selected from the group consisting of carboxylic acids having three or more carboxyl groups.
예를 들어, 상기 1개의 카르복실기를 갖는 직쇄상의 포화 카르복실산은, 포름산(formic acid), 아세트산(acetic acid), 프로피온산(propionic acid), 부티르산(butyric acid), 발레르산(valeric acid), 헥사노산(hexanoic acid), 헵타노산(heptanoic acid), 카프릴산(caprylic acid), 노나노산(nonanoic acid), 데카노산(decanoic acid), 운데실산(undecylenic acid), 라우릴산(lauric acid), 트리데실산(tridecylic acid), 미리스트산(myristic acid), 펜타데카노산(pentadecanoic acid) 및 팔미트산(palmitic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함할 수 있다.For example, the straight-chain saturated carboxylic acid having one carboxyl group may be formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexa But are not limited to, hexanoic acid, heptanoic acid, caprylic acid, nonanoic acid, decanoic acid, undecylenic acid, lauric acid, And may include at least one member selected from the group consisting of tridecylic acid, myristic acid, pentadecanoic acid and palmitic acid.
예를 들어, 상기 포화 지방족 디카르복실산은, 옥살산(oxalic acid), 말론산(malonic acid), 숙신산(succinic acid), 글루타르산(glutaric acid), 아디프산(adipic acid), 피멜산(pimelic acid), 수베르산(suberic acid), 아젤라산(azelaic acid) 및 세바식산(sebacic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함할 수 있다. For example, the saturated aliphatic dicarboxylic acid may be selected from the group consisting of oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, picolinic acid, pimelic acid, suberic acid, azelaic acid, and sebacic acid.
예를 들어, 상기 불포화 지방족 디카르복실산은, 말레인산(maleic acid), 푸마르산(fumaric acid), 글루타콘산(glutaconic acid), 트라우마트산(traumatic acid) 및 무콘산(muconic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함할 수 있다.For example, the unsaturated aliphatic dicarboxylic acid may be selected from the group consisting of maleic acid, fumaric acid, glutaconic acid, traumatic acid and muconic acid. And may include one or more species.
예를 들어, 상기 3개 이상의 카르복실기를 갖는 카르복실산은, 시트르산(citric acid), 이소시트르산(isocitric acid), 아콘산(aconitic acid), 카르발릴산(carballylic acid), 트리베스산(tribasic acid) 및 멜리트산(mellitic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함할 수 있다.For example, the carboxylic acid having three or more carboxyl groups may be selected from the group consisting of citric acid, isocitric acid, aconitic acid, carballylic acid, tribasic acid, And mellitic acid. [0029] The term " anionic surfactant "
예를 들어, 상기 유기산은, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%; 0.00001 중량% 내지 3 중량%; 또는 0.01 중량% 내지 2 중량%일 수 있다. 상기 범위 내에 포함되면, 연마 미립자, 금속 불순물 등을 효과적으로 세정할 수 있고, 반도체 기판의 금속막의 손상을 줄일 수 있다. For example, the organic acid may be present in an amount ranging from 0.00001% to 10% by weight; 0.00001 wt.% To 3 wt.%; Or from 0.01% to 2% by weight. Within the above range, it is possible to effectively clean abrasive particles, metal impurities, and the like, and to reduce damage to the metal film of the semiconductor substrate.
본 발명의 일 예로, 상기 포스폰산계 킬레이트제는, 반도체 기판 상에 잔류하는 연마 미립자, 금속 불순물 등의 제거 효과를 증가시킬 수 있다. As an example of the present invention, the phosphonic acid-based chelating agent can increase the removal effect of the abrasive particles, metal impurities, and the like remaining on the semiconductor substrate.
예를 들어, 상기 포스폰산계 킬레이트제는, 에틸리덴디포스폰산, 1-히드록시에틸리덴-1,1'-디포스폰산(HEDPO), 1-히드록시프로필리덴-1,1'-디포스폰산, 1-히드록시부틸리덴-1,1'-디포스폰산, 에틸아미노비스(메틸렌포스폰산), 도데실아미노비스(메틸렌포스폰산), N,N,N',N'-에틸렌디아민테트라키스(메틸렌포스폰산) (N,N,N',N'-Ethylenediaminetetrakis (methylenephosphonic acid)), 2-포스포노-부탄-1,2,4-트리카르복실산(2-phosphono-butane-1,2,4-tricarboxylic acid, PBTC), 니트릴로트리스(메틸렌포스폰산) (NTPO), 에틸렌디아민비스(메틸렌포스폰산) (EDDPO), 1,3-프로필렌디아민비스(메틸렌포스폰산), 에틸렌디아민테트라(메틸렌포스폰산) (EDTPO), 에틸렌디아민테트라(에틸렌포스폰산), 1,3-프로필렌디아민테트라(메틸렌포스폰산) (PDTMP), 1,2-디아미노프로판테트라(메틸렌포스폰산), 1,6-헥사메틸렌디아민테트라(메틸렌포스폰산), 디에틸렌트리아민펜타(메틸렌포스폰산) (DEPPO), 디에틸렌트리아민펜타(에틸렌포스폰산), 트리에틸렌테트라민헥사(메틸렌포스폰산) 및 트리에틸렌테트라민헥사(에틸렌포스폰산)로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. For example, the phosphonic acid-based chelating agent may be selected from the group consisting of ethylidene diphosphonic acid, 1-hydroxyethylidene-1,1'-diphosphonic acid (HEDPO), 1-hydroxypropylidene- (Methylenephosphonic acid), N, N, N ', N'-dicyclohexylidene-diphosphonic acid, 1-hydroxybutylidene-1,1'-diphosphonic acid, ethylaminbis (N, N ', N'-Ethylenediaminetetrakis (methylenephosphonic acid)), 2-phosphono-butane (1,2,4-tricarboxylic acid) 1,2,4-tricarboxylic acid, PBTC), nitrilotris (methylenephosphonic acid) (NTPO), ethylenediamine bis (methylenephosphonic acid) (EDDPO), 1,3-propylenediamine bis (methylenephosphonic acid) Propylene diamine tetra (methylene phosphonic acid) (PDTMP), 1,2-diaminopropane tetra (methylene phosphonic acid), ethylenediamine tetra (methylene phosphonic acid) (EDTPO) , 1,6-hexamethylene di (Ethylene phosphonic acid), triethylenetetramine hexa (methylene phosphonic acid), and triethylenetetramine hexa (methylene phosphonic acid), and the like. Ethylene phosphonic acid), and the like.
예를 들어, 상기 포스산계 킬레이트제는, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%; 0.00001 중량% 내지 5 중량%; 또는 0.001 중량% 내지 5 중량%일 수 있다. 상기 범위 내에 포함되면, 상기 포스폰산계 킬레이트제에 의한 충분한 세정 효과를 제공하고, 기판 상에 포스폰산계 킬레이트제가 불순물로 잔류하는 것을 방지할 수 있다. For example, the phosphoric acid based chelating agent may be present in the cleaning liquid composition in an amount of 0.00001 wt% to 10 wt%; 0.00001 wt% to 5 wt%; Or 0.001 wt% to 5 wt%. When contained in the above range, it is possible to provide a sufficient cleaning effect by the phosphonic acid-based chelating agent and prevent the phosphonic acid-based chelating agent from remaining as an impurity on the substrate.
본 발명의 일 예로, 상기 알코올 아민계 화합물은, 상기 세정액 조성물의 pH를 조절하고, 연마 입자, 금속 불순물 등의 세정 효과를 증가시킬 수 있다. As an example of the present invention, the alcohol amine compound can increase the cleaning effect of abrasive particles, metal impurities, and the like by adjusting the pH of the cleaning liquid composition.
예를 들어, 상기 알코올 아민계 화합물은, 모노에탄올아민(MEA, monoethanolamine), 모노-n-프로판올아민, 모노이소프로판올아민, 모노-n-부탄올아민, 모노펜타놀아민, 모노헥사놀아민, 모노헵타놀아민, 모노옥타놀아민, 모노노나놀아민, 모노데카놀아민, 디에탄올아민(DEA), 디프로판올아민, 디이소프로판올아민(DIPA), 디부탄올아민, 디펜타놀아민, 디헥사놀아민, 디헵타놀아민, 디옥타놀아민, 디노나놀아민, 디데카놀아민, N-메틸디에탄올아민(MDEA), 트리에탄올아민(TEA), 트리이소프로판올아민(TIPA), 트리펜타놀아민, 트리헥사놀아민, 트리헵타놀아민, 트리옥타놀아민, 트리노나놀아민, 트리데카놀아민, 2-아미노-2-메틸-프로판올(AMP, 2-Amino-2-methyl-propanol), 1-아미노이소프로판올(AIP), 2-아미노-1-프로판올, N-메틸아미노에탄올(N-MAE), 3-아미노-1-프로판올, 4-아미노-1-부탄올, 2-(2-아미노에톡시)-1-에탄올(AEE) 및 2-(2-아미노에틸아미노)-1-에탄올로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. For example, the alcohol amine compound may be selected from the group consisting of monoethanolamine (MEA), mono-n-propanolamine, monoisopropanolamine, mono-n-butanolamine, monopentanolamine, monohexanolamine, monoheptanolamine (DIPA), dibutanolamine, dipentanolamine, dihexanolamine, diethanolamine, diethanolamine (DEA), dipropanolamine, diisopropanolamine (MDEA), triethanolamine (TEA), triisopropanolamine (TIPA), tripentanolamine, trihexanolamine, triethanolamine, triethanolamine 2-amino-2-methyl-propanol, 1-aminoisopropanol (AMP), triethanolamine, trinonaphloramine, tridecanolamine, tridecanolamine, (AIP), 2-amino-1-propanol, N-methylaminoethanol (N-MAE) Ol, and it may include 2- (2-Amino-ethoxy) -1-ethanol (AEE) and 2-at least one selected from the group consisting of 1-ethanol (2-aminoethylamino).
본 발명의 일 예로, 상기 알코올 아민계 화합물은, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%; 0.00001 중량% 내지 5 중량%; 또는 0.001 중량% 내지 5 중량%일 수 있다. 상기 함량 범위 내에 포함되면, 잔류하는 연마 미립자 등의 표면 전하 상태를 개질하여 양자의 반발력을 높여 연마 미립자의 제거성을 높일 수 있다.In one embodiment of the present invention, the alcohol amine compound is contained in the cleaning liquid composition in an amount of 0.00001 wt% to 10 wt%; 0.00001 wt% to 5 wt%; Or 0.001 wt% to 5 wt%. When the content is within the above range, the surface charge state of the remaining abrasive grains and the like can be modified to increase the repulsive force between them to enhance the removability of the abrasive grains.
본 발명의 일 예로, 상기 계면활성제는, 세정액 조성물의 표면 장력 및 접촉각을 낮추고, 제타 전위를 안정화시켜 잔여물 제거율을 향상시킬 수 있다. 즉, 상기 계면활성제는, 액체-고체 사이의 계면장력을 감소시켜 접촉각을 낮추고, 이러한 낮은 접촉각에 의해 습윤성이 향상되어 효과적인 잔여물 제거가 이루어질 수 있다. In one embodiment of the present invention, the surfactant can lower the surface tension and the contact angle of the cleaning liquid composition, stabilize the zeta potential, and improve the residue removal rate. That is, the surfactant reduces the interfacial tension between the liquid and the solid to lower the contact angle, and the wettability can be improved by such a low contact angle, so that effective residue removal can be achieved.
또한, 상기 계면활설제는, 유기산, 킬레이트제 및 알코올 아민계 화합물의 조합에서 발생하는 불안정한 제타 전위를 안정화시키고, 음의 값으로 감소시킬 수 있으므로, 미립자 등과 같은 잔류물이 표면에 흡착되는 것을 방지하여 세정 효과를 증가시킬 수 있다.In addition, since the interfacial active agent stabilizes the unstable zeta potential generated from a combination of an organic acid, a chelating agent and an alcohol amine compound, it can be reduced to a negative value, so that residues such as fine particles are prevented from being adsorbed on the surface So that the cleaning effect can be increased.
예를 들어, 상기 계면활성제는, 비이온성 계면활성제이며, 보다 구체적으로, 폴리옥시에틸렌 알킬 에테르, 폴리옥시에틸렌 아릴 에테르 폴리옥시에틸렌 아릴 에테르, 폴리옥시에틸렌 알케닐 에테르, 폴리옥시알킬렌 알킬 페닐 에테르, 폴리옥시알킬렌 글리콜, 폴리옥시에틸렌 모노알킬레이트, 폴리에틸렌글리콜, 폴리옥시에틸렌 글리콜알킬에테르, 옥타에틸렌 글리콜 모노도데실 에테르, 펜타에틸렌 글리콜 모노도데실 에테르, 폴리옥시프로필렌 글리콜 알킬 에테르, 글루코사이드 알킬 에테르, 데실 글루코사이드 알킬 에테르, 라우릴 글루코사이드 알킬 에테르, 옥틸 글루코사이드 알킬 에테르, 폴리옥시에틸렌 글리콜 알킬페놀 에테르, 글리세롤 알킬 에스터 (Glycerol alkyl esters), 폴리에틸렌 글리콜 소르비탄 알킬에스터 (Polyoxyethylene glycol sorbitan alkyl esters), 폴리소르베이트 20, 40, 60, 80 (Polysorbate 20, 40, 60, 80), 소르비탄 알킬 에스터 (Sorbitan alkyl esters), 및 (폴리옥시에틸렌ㆍ폴리옥시프로필렌) 공중합체로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. 여리서, "알킬, 알킬렌 및 알케닐"은 탄소수 1 내지 20에서 선택되고, "아릴"은 탄소수 6 내지 30에서 선택된다.For example, the surfactant is a nonionic surfactant, and more specifically, a polyoxyethylene alkyl ether, a polyoxyethylene aryl ether polyoxyethylene aryl ether, a polyoxyethylene alkenyl ether, a polyoxyalkylene alkyl phenyl ether , Polyoxyalkylene glycols, polyoxyethylene monoalkylates, polyethylene glycols, polyoxyethylene glycol alkyl ethers, octaethylene glycol monododecyl ether, pentaethylene glycol monododecyl ether, polyoxypropylene glycol alkyl ethers, glucoside alkyl ethers , Decyl glucoside alkyl ethers, lauryl glucoside alkyl ethers, octyl glucoside alkyl ethers, polyoxyethylene glycol alkyl phenol ethers, glycerol alkyl esters, polyoxyethylene glycol sorbitan alkyl esters esters, polysorbate 20, 40, 60, 80 (Polysorbate 20, 40, 60, 80), sorbitan alkyl esters, and (polyoxyethylene / polyoxypropylene) And may include at least one selected. As used herein, the terms "alkyl, alkylene and alkenyl" are to be selected from 1 to 20 carbon atoms and "aryl"
본 발명의 일 예로, 상기 계면활성제는, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%; 0.00001 중량% 내지 5 중량%; 또는 0.001 중량% 내지 2 중량%일 수 있다. 상기 함량 범위 내에 포함되면, 세정액 조성물의 접촉각 및 표면 장력을 감소시켜 습윤성을 증가시키고, 제타전위를 안정화시켜 잔류하는 연마 미립자 등의 불순물의 흡착을 방지하여 세정 효과를 높이고, 과량의 계면활성제가 불순물로 잔류하는 것을 방지할 수 있다. In one embodiment of the present invention, the surfactant comprises 0.00001% to 10% by weight of the cleaning liquid composition; 0.00001 wt% to 5 wt%; Or from 0.001% to 2% by weight. When the content of the surfactant is within the above range, the contact angle and surface tension of the cleaning liquid composition are reduced to increase the wettability, stabilize the zeta potential and prevent the adsorption of impurities such as residual abrasive particles to improve the cleaning effect, It is possible to prevent it from remaining to the outside.
본 발명의 일 예로, 상기 세정액 조성물은, 용매를 포함하고, 상기 용매는, 물, 및/또는 유기용매를 포함할 수 있다. 예를 들어, 증류수, 탈이온수, 초순수 등일 수 있다.In one embodiment of the present invention, the cleaning liquid composition comprises a solvent, and the solvent may comprise water and / or an organic solvent. For example, distilled water, deionized water, ultrapure water, and the like.
본 발명의 일 예로, 상기 세정액 조성물의 pH를 조절하기 위해서 pH 조절제를 더 포함할 수 있다. 예를 들어, 상기 pH 조절제는, 산성 물질 또는 염기성 물질을 포함하는 pH 조절제;를 더 포함하고, 상기 산성 물질은, 질산, 염산, 인산, 황산, 불산, 브롬산, 요오드산, 포름산, 말론산, 말레인산, 옥살산, 초산, 아디프산, 구연산, 아디프산, 아세트산, 프로피온산, 푸마르산, 유산, 살리실산, 피멜린산, 벤조산, 숙신산, 프탈산, 부티르산, 글루타르산, 글루타민산, 글리콜산, 락트산, 아스파라긴산, 타르타르산 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다.As an example of the present invention, a pH adjusting agent may be further added to adjust the pH of the cleaning liquid composition. For example, the pH adjusting agent may further comprise a pH adjusting agent containing an acidic or basic substance, wherein the acidic substance is at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, But are not limited to, maleic, oxalic, acetic, adipic, citric, adipic, acetic, propionic, fumaric, lactic, salicylic, pimelic, benzoic, succinic, phthalic, butyric, glutaric, glutamic, glycolic, Aspartic acid, tartaric acid, and salts thereof.
예를 들어, 상기 염기성 물질은, 암모늄메틸프로판올(ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨, 이미다졸 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. For example, the basic substance may be selected from the group consisting of ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, Sodium hydroxide, cesium hydroxide, sodium hydrogencarbonate, sodium carbonate, imidazole and salts thereof.
본 발명의 일 예로, 상기 세정액 조성물은, 암모니아수-프리일 수 있으며, 이는 암모니아 수에 의한 반도체 웨이퍼의 손상을 방지하고, 연마 입자 및 금속 불순물 등에 대한 우수한 세정 효과를 제공할 수 있다.In one embodiment of the present invention, the cleaning liquid composition may be ammonia water-free, which can prevent the semiconductor wafer from being damaged by ammonia water and provide excellent cleaning effect against abrasive particles and metal impurities.
본 발명의 일 예로, 상기 세정액 조성물의 pH는, 7 내지 13; 7 내지 10; 7 내지 9; 또는 7 내지 8의 범위인 것일 수 있다. 상기 pH 범위 내에 포함되면, 반도체 웨이퍼의 손상을 줄이고, 우수한 세정 효과를 제공할 수 있다. 또한, 반도체 웨이퍼의 금속의 부식 및 에칭을 방지할 수 있고, 연마 후 잔류 입자, 산화 오염물 의 세정뿐만 아니라, 포토레지스트, 반사방지막, 플라즈마 에칭 잔사 및 애싱 잔사를 충분히 제거할 수 있다.In one embodiment of the present invention, the pH of the cleaning composition is 7 to 13; 7 to 10; 7 to 9; Or in the range of 7 to 8. When the pH is within the above range, damage to the semiconductor wafer can be reduced and an excellent cleaning effect can be provided. Further, corrosion and etching of the metal of the semiconductor wafer can be prevented, and the photoresist, the anti-reflection film, the plasma etching residue and the ashing residue can be sufficiently removed as well as the cleaning of the residual particles and oxidized contaminants after polishing.
본 발명의 일 예로, 상기 세정액 조성물은 반도체 소자, 예를 들어, 반도체 디바이스용 웨이퍼에 직접 접촉시켜 세정하는 것일 수 있으며, 세정 대상이 되는 반도체 디바이스용 웨이퍼로는, 반도체, 금속, 자성체, 초전도체 등의 반도체 디바이스용 웨이퍼를 포함할 수 있다. 특히, 이 중에서도, 본 발명의 세정액 조성물은 배선 등의 표면에 금속 또는 금속 화합물을 포함하는 반도체 디바이스용 웨이퍼에 특히 적합한 것일 수 있다. 상기 반도체 디바이스용 웨이퍼에 사용되는 금속으로는, 텅스텐, 구리, 티타늄, 탄탈, 니켈, 크롬, 루테늄, 코발트, 아연, 하프늄, 몰리브덴, 네오디늄, 인듐, 루비듐, 금, 백금 및 은으로 이루어진 군에서 선택된 1종 이상을 포함하고, 금속 화합물로는, 이들 금속의 질화물, 산화물, 실리사이드 등을 포함할 수 있다. 바람직하게는, 본 발명의 세정액 조성물은, 텅스텐, 구리, 티타늄, 탄탈, 루테늄 및/또는 코발트 또는 이들의 화합물을 포함하는 반도체 디바이스용 웨이퍼에 적용될 수 있다. 더 바람직하게는, 본 발명의 세정액 조성물은 구리 및 텅스텐 또는 이의 산화물을 포함하는 반도체 디바이스용 웨이퍼이며, 예를 들어, 텅스텐 배선 또는 텅스텐 합금 배선 등을 갖는 반도체 기판의 화학기계적 연마 후 세정액으로 사용될 수 있다.For example, the cleaning liquid composition may be cleaned by directly contacting a semiconductor device, for example, a semiconductor device wafer, and the semiconductor device wafer to be cleaned may be a semiconductor, metal, magnetic material, superconductor The wafer for a semiconductor device. Particularly, among them, the cleaning liquid composition of the present invention may be particularly suitable for a wafer for a semiconductor device containing a metal or a metal compound on the surface of a wiring or the like. The metal used for the wafer for a semiconductor device may be at least one selected from the group consisting of tungsten, copper, titanium, tantalum, nickel, chromium, ruthenium, cobalt, zinc, hafnium, molybdenum, neodymium, indium, rubidium, And at least one selected from the group consisting of a nitride, an oxide, a silicide, and the like of the metal. Preferably, the cleaning liquid composition of the present invention can be applied to wafers for semiconductor devices comprising tungsten, copper, titanium, tantalum, ruthenium and / or cobalt or a compound thereof. More preferably, the cleaning liquid composition of the present invention is a wafer for a semiconductor device comprising copper and tungsten or an oxide thereof and can be used as a cleaning liquid after chemical mechanical polishing of a semiconductor substrate having, for example, tungsten wiring or tungsten alloy wiring and the like have.
본 발명의 일 예로, 상기 세정액 조성물은, 텅스텐막에 비부식성일 수 있고, 상기 세정액 조성물은, 텅스텐(W)의 용출속도가 0.1(Å/min) 이하인 것일 수 있다.In one embodiment of the present invention, the cleaning liquid composition may be noncorrosive to the tungsten film, and the cleaning liquid composition may have a dissolution rate of tungsten (W) of 0.1 (Å / min) or less.
본 발명의 일 예로, 상기 세정액 조성물은, 0 mV 내지 -200 mV의 제타전위를 가지며; 바람직하게는 음의 값을 가지며, 예를 들어, -1 mV 내지 -200 mV; 또는 -30 mV 내지 -200 mV; 또는 -35 mV 내지 -100 mV의 제타전위를 갖는 것일 수 있다. 상기 제타전위 값의 범위 내에 포함되면, 미세 잔여물 등의 흡착을 방지하여 제거 효과를 증가시킬 수 있다.As an example of the present invention, the cleaning liquid composition has a zeta potential of 0 mV to -200 mV; Preferably has a negative value, for example from -1 mV to -200 mV; Or -30 mV to -200 mV; Or a zeta potential of -35 mV to -100 mV. When the zeta potential is within the range of the zeta potential value, adsorption of minute residues and the like can be prevented and the removal effect can be increased.
본 발명의 일 예로, 상기 세정액 조성물은, 60 ° 이하; 0 ° 초과 내지 60 °; 0 ° 초과 내지 50 °; 또는 1 ° 초과 내지 40 °의 표면 접촉각을 가질 수 있으며, 이러한 낮은 접촉각에 의해 세정액 조성물의 습윤성을 향상시켜 미세 잔여물 등의 제거 효과를 증가시킬 수 있다. In one embodiment of the present invention, the cleaning liquid composition has a cleaning liquid composition comprising: 60 DEG or less; 0 DEG to 60 DEG; 0 DEG to 50 DEG; Or a surface contact angle of more than 1 DEG to 40 DEG, and by such a low contact angle, the wettability of the cleaning liquid composition can be improved, and the removal effect of fine residues and the like can be increased.
실시예 1 내지 8Examples 1 to 8
하기의 표 1에서 제시한 성분 및 함량(초순수 100 중량부 기준)의 유기산, 킬레이트, 알코올 아민계 화합물 및 비이온성 계면활성제를 초순수와 혼합하여 세정액을 제조하였다. pH는 질산과 수산화칼륨을 첨가하여 조정하였다.The organic acid, chelate, alcohol amine compound and nonionic surfactant of the components and the contents (based on 100 parts by weight of ultrapure water) shown in Table 1 below were mixed with ultrapure water to prepare a cleaning liquid. The pH was adjusted by adding nitric acid and potassium hydroxide.
비교예 1 내지 3Comparative Examples 1 to 3
하기의 표 1에서 제시한 성분 및 함량(초순수 100 중량부 기준)으로 초순수와 혼합하여 세정액을 제조하였다. pH는 질산과 수산화칼륨을 첨가하여 조정하였다.The ingredients and the contents (based on 100 parts by weight of ultrapure water) shown in Table 1 below were mixed with ultrapure water to prepare a cleaning liquid. The pH was adjusted by adding nitric acid and potassium hydroxide.
이트Killer
It
EDTMP: N,N,N',N'-에틸렌디아민테트라키스(메틸렌포스폰산) (N,N,N',N'-Ethylenediaminetetrakis (methylenephosphonic acid)), EDTMP: N, N, N ', N'-ethylenediaminetetrakis (methylenephosphonic acid), N,
D1: 모노에탄올아민 (Monoethanolamine)D1: monoethanolamine
Tween 20: Polysorbate 20Tween 20: Polysorbate 20
Triton x 100: Octyl phenol ethoxylate(polyoxyethylene aryl ether)Triton x 100: Octyl phenol ethoxylate (polyoxyethylene aryl ether)
NP 10: Polyethylene glycol nonyl phenyl ether(polyoxyethylene aryl ether)NP 10: Polyethylene glycol nonyl phenyl ether (polyoxyethylene aryl ether)
LE 9: Lauryl alcohol ethoxylate(polyoxyethylene alkyl ether)LE 9: Lauryl alcohol ethoxylate (polyoxyethylene alkyl ether)
PEG 400: Polyethylene glycolPEG 400: Polyethylene glycol
음이온성 계면활성제:Anionic surfactant:
ALS (ammonium lauryl sulfate)ALS (ammonium lauryl sulfate)
시험예 Test Example
(1) 표면 장력은 초순수로 희석한 세정액을 Pendant drop method 방법 및 DSA100장치를 이용하여 측정하여 표 2에 나타내었다.(1) The surface tension was measured by using the Pendant drop method and the DSA100 apparatus, and the cleaning liquid diluted with ultrapure water was measured and shown in Table 2.
(2) 표면에너지 및 접촉각은, 2cmⅩ2cm 크기의 텅스텐 웨이퍼 절편을 실시예 및 비교예의 세정액 조성물로 30초 세척한 이후 질소로 건조하고 3㎕ 의 초순수 방울을 떨어뜨려 세정후의 접촉각을 5회 측정하여 평균 값을 표 2에 나타내었다.(2) The surface energy and the contact angle were measured by cleaning the tungsten wafer slice having a size of 2 cm x 2 cm for 30 seconds with the cleaning liquid compositions of Examples and Comparative Examples, then drying with nitrogen, dropping 3 μl of ultrapure water droplets, The values are shown in Table 2.
(3) 제타전위는 실리카 1wt%용액에 세정액을 첨가하여 용액을 제조한 후 Zeta finder 장치를 이용하여 상온에서 측정하여 표 2에 나타내었다.(3) The zeta potential was measured at room temperature using a Zeta finder apparatus after preparing a solution by adding a cleaning solution to a 1 wt% silica solution.
(°)Contact angle
(°)
에너지
(mN/m)surface
energy
(mN / m)
장력
(mN/m)surface
tension
(mN / m)
(mV)Zeta pontential
(mV)
표 2를 살펴보면, 본 발명에 의한 비이온성 계면활성제를 포함하는 실시예 1 내지 실시예 5 및 실시예 8의 세정액은, 음의 제타전위 값을 가지며, 계면활성제를 포함하지 않는 비교예 2 및 음이온성 계면활성제를 포함하는 비교예 3에 비하여 접촉각 및 표면 장력이 낮은 것을 확인할 수 있다. 또한, pH 값이 증가되는 실시예 6 및 실시예 7과 비이온성 계면활성제의 함량이 증가된 비교예 1은, 접촉각 및 표면장력이 증가되는 것을 확인할 수 있다. The cleaning liquids of Examples 1 to 5 and Example 8 including the nonionic surfactant according to the present invention had a negative zeta potential value, and Comparative Example 2 containing no surfactant and anionic It is confirmed that the contact angle and the surface tension are lower than that of Comparative Example 3 containing the surfactant. In addition, it was confirmed that the contact angle and the surface tension were increased in Examples 6 and 7 in which the pH value was increased and Comparative Example 1 in which the content of the nonionic surfactant was increased.
본 발명은, 유기산, 킬레이트제, 알코올 아민계 화합물 및 비이온성 계면활성제를 적용하여 표면 장력 및 접촉각을 감소시켜 잔여물의 세정 효과가 향상된 세정액 조성물을 제공할 수 있다. The present invention can provide a cleaning liquid composition improved in cleaning effect of residues by applying an organic acid, a chelating agent, an alcohol amine compound, and a nonionic surfactant to reduce surface tension and contact angle.
이상과 같이 본 발명은 비록 한정된 실시예에 의해 설명되었으나, 본 발명은 상기의 실시예에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. 그러므로, 본 발명의 범위는 설명된 실시예에 제한되어 정해져서는 아니 되며, 후술하는 특허청구범위뿐 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Do. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the equivalents of the appended claims, as well as the appended claims.
Claims (19)
포스폰산계 킬레이트제;
알코올 아민계 화합물; 및
계면활성제;
를 포함하는,
세정액 조성물.
Organic acids;
Phosphonic acid chelating agents;
Alcohol amine compounds; And
Surfactants;
/ RTI >
Cleaning liquid composition.
상기 유기산은, 1개의 카르복실기를 갖는 직쇄상의 포화 카르복실산; 포화 지방족 디카르복실산; 불포화 지방족 디카르복실산; 방향족 디카르복실산; 및 3개 이상의 카르복실기를 갖는 카르복실산;으로 이루어진 군으로부터 선택된 1종 이상을 포함하는 것이고,
상기 1개의 카르복실기를 갖는 직쇄상의 포화 카르복실산은, 포름산(formic acid), 아세트산(acetic acid), 프로피온산(propionic acid), 부티르산(butyric acid), 발레르산(valeric acid), 헥사노산(hexanoic acid), 헵타노산(heptanoic acid), 카프릴산(caprylic acid), 노나노산(nonanoic acid), 데카노산(decanoic acid), 운데실산(undecylenic acid), 라우릴산(lauric acid), 트리데실산(tridecylic acid), 미리스트산(myristic acid), 펜타데카노산(pentadecanoic acid) 및 팔미트산(palmitic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함하고,
상기 포화 지방족 디카르복실산 은, 옥살산(oxalic acid), 말론산(malonic acid), 숙신산(succinic acid), 글루타르산(glutaric acid), 아디프산(adipic acid), 피멜산(pimelic acid), 수베르산(suberic acid), 아젤라산(azelaic acid) 및 세바식산(sebacic acid)으로 이루어진 군에서 선택된 1종 이상을 포함하고,
상기 불포화 지방족 디카르복실산은, 말레인산(maleic acid), 푸마르산(fumaric acid), 글루타콘산(glutaconic acid), 트라우마트산(traumatic acid) 및 무콘산(muconic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함하고,
상기 방향족 디카르복실산은, 프탈산(phthalic acid), 이소프탈산(isophthalic acid) 및 테레프탈산(terephthalic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함하고,
상기 3개 이상의 카르복실기를 갖는 카르복실산은, 시트르산(citric acid), 이소시트르산(isocitric acid), 아콘산(aconitic acid), 카르발릴산(carballylic acid), 트리베스산(tribasic acid) 및 멜리트산(mellitic acid)으로 이루어진 군으로부터 선택된 1종 이상을 포함하는 것인,
세정액 조성물.
The method according to claim 1,
The organic acid is a linear saturated carboxylic acid having one carboxyl group; Saturated aliphatic dicarboxylic acids; Unsaturated aliphatic dicarboxylic acids; Aromatic dicarboxylic acids; And a carboxylic acid having at least three carboxyl groups, and at least one compound selected from the group consisting of
The straight chain saturated carboxylic acid having one carboxyl group is preferably selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid ), Heptanoic acid, caprylic acid, nonanoic acid, decanoic acid, undecylenic acid, lauric acid, tridecylic acid tridecylic acid, myristic acid, pentadecanoic acid, and palmitic acid, and more preferably at least one selected from the group consisting of tridecylic acid, myristic acid, pentadecanoic acid and palmitic acid.
The saturated aliphatic dicarboxylic acid may be selected from the group consisting of oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, , At least one selected from the group consisting of suberic acid, azelaic acid and sebacic acid,
The unsaturated aliphatic dicarboxylic acid may be at least one selected from the group consisting of maleic acid, fumaric acid, glutaconic acid, traumatic acid and muconic acid. Including,
The aromatic dicarboxylic acid includes at least one selected from the group consisting of phthalic acid, isophthalic acid and terephthalic acid,
The carboxylic acid having three or more carboxyl groups is preferably selected from the group consisting of citric acid, isocitric acid, aconitic acid, carballylic acid, tribasic acid and melitic acid mellitic acid. < RTI ID = 0.0 >
Cleaning liquid composition.
상기 유기산은, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%인 것인,
세정액 조성물.
The method according to claim 1,
Wherein the organic acid is 0.00001 wt% to 10 wt% of the cleaning liquid composition.
Cleaning liquid composition.
상기 포스폰산계 킬레이트제는,
에틸리덴디포스폰산, 1-히드록시에틸리덴-1,1'-디포스폰산(HEDPO), 1-히드록시프로필리덴-1,1'-디포스폰산, 1-히드록시부틸리덴-1,1'-디포스폰산, 에틸아미노비스(메틸렌포스폰산), 도데실아미노비스(메틸렌포스폰산), N,N,N',N'-에틸렌디아민테트라키스(메틸렌포스폰산) (N,N,N',N'-Ethylenediaminetetrakis(methylenephosphonic aicd)), 2-포스포노-부탄-1,2,4-트리카르복실산(2-phosphono-butane-1,2,4-tricarboxylic acid, PBTC), 니트릴로트리스(메틸렌포스폰산, NTPO), 에틸렌디아민비스(메틸렌포스폰산, EDDPO), 1,3-프로필렌디아민비스(메틸렌포스폰산), 에틸렌디아민테트라(메틸렌포스폰산, EDTPO), 에틸렌디아민테트라(에틸렌포스폰산, EDTMP), 1,3-프로필렌디아민테트라(메틸렌포스폰산, PDTMP), 1,2-프로필렌디아민테트라(메틸렌포스폰산), 1,2-디아미노프로판테트라(메틸렌포스폰산), 1,6-헥사메틸렌디아민테트라(메틸렌포스폰산), 헥센디아민테트라(메틸렌포스폰산), 디에틸렌트리아민펜타(메틸렌포스폰산, DEPPO), 디에틸렌트리아민펜타(에틸렌포스폰산), 트리에틸렌테트라민헥사(메틸렌포스폰산) 니트로트리스(메틸렌포스폰산) 및 트리에틸렌테트라민헥사(에틸렌포스폰산)로 이루어진 군에서 선택된 1종 이상을 포함하는 것인,
세정액 조성물.
The method according to claim 1,
The phosphonic acid-based chelating agent,
Ethylidene diphosphonic acid, 1-hydroxyethylidene-1,1'-diphosphonic acid (HEDPO), 1-hydroxypropylidene-1,1'-diphosphonic acid, 1 -hydroxybutylidene- N, N ', N'-ethylenediamine tetrakis (methylenephosphonic acid) (N, N'-diphenylmethanephosphonic acid), 1,1'-diphosphonic acid, ethylaminobis (methylenephosphonic acid), dodecylaminbis N, N ', N'-Ethylenediaminetetrakis (methylenephosphonic acid), 2-phosphono-butane-1,2,4-tricarboxylic acid (PBTC) , Ethylenediamine bis (methylenephosphonic acid, EDDPO), 1,3-propylenediamine bis (methylenephosphonic acid), ethylenediamine tetra (methylenephosphonic acid, EDTPO), ethylenediamine tetra (Ethylene phosphonic acid, EDTMP), 1,3-propylenediamine tetra (methylene phosphonic acid, PDTMP), 1,2-propylenediamine tetra (methylene phosphonic acid), 1,2-diaminopropane tetra 1,6-hexamethylene (Methylenephosphonic acid), diethylene triamine penta (methylene phosphonic acid, DEPPO), diethylene triamine penta (ethylene phosphonic acid), triethylene tetramine hexa (methylene phosphonic acid, ) Nitrotris (methylenephosphonic acid), and triethylenetetraminehexa (ethylenephosphonic acid).
Cleaning liquid composition.
상기 포스산계 킬레이트제는, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%인 것인,
세정액 조성물.
The method according to claim 1,
Wherein the phosphoric acid-based chelating agent is 0.00001 wt% to 10 wt% of the cleaning liquid composition.
Cleaning liquid composition.
상기 알코올 아민계 화합물은, 모노에탄올아민(MEA), 모노-n-프로판올아민, 모노이소프로판올아민, 모노-n-부탄올아민, 모노펜타놀아민, 모노헥사놀아민, 모노헵타놀아민, 모노옥타놀아민, 모노노나놀아민, 모노데카놀아민, 디에탄올아민(DEA), 디프로판올아민, 디이소프로판올아민(DIPA), 디부탄올아민, 디펜타놀아민, 디헥사놀아민, 디헵타놀아민, 디옥타놀아민, 디노나놀아민, 디데카놀아민, N-메틸디에탄올아민(MDEA), 트리에탄올아민(TEA), 트리이소프로판올아민(TIPA), 트리펜타놀아민, 트리헥사놀아민, 트리헵타놀아민, 트리옥타놀아민, 트리노나놀아민, 트리데카놀아민, 2-아미노-2-메틸-프로판올(AMP), 1-아미노이소프로판올(AIP), 2-아미노-1-프로판올, N-메틸아미노에탄올(N-MAE), 3-아미노-1-프로판올, 4-아미노-1-부탄올, 2-(2-아미노에톡시)-1-에탄올(AEE) 및 2-(2-아미노에틸아미노)-1-에탄올로 이루어진 군에서 선택된 1종 이상을 포함하는 것인,
세정액 조성물.
The method according to claim 1,
The alcohol amine compound may be at least one selected from the group consisting of monoethanolamine (MEA), mono-n-propanolamine, monoisopropanolamine, mono-n-butanolamine, monopentanolamine, monohexanolamine, monoheptanolamine, (DIPA), dibutanolamine, dipentanolamine, dihexanolamine, diheptanolamine, diheptanolamine, diethanolamine, diethanolamine, diethanolamine (MDEA), triethanolamine (TEA), triisopropanolamine (TIPA), tripentanolamine, trihexanolamine, triheptanolamine, triethanolamine Amino-2-methylpropanol (AMP), 1-aminoisopropanol (AIP), 2-amino-1-propanol, N-methylamino Amino-1-butanol, 2- (2-aminoethoxy) -1-ethanol (AEE) and 2- (2- The unexposed ethylamino) comprises at least one member selected from the group consisting of 1-ethanol,
Cleaning liquid composition.
상기 알코올 아민계 화합물은, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%인 것인,
세정액 조성물.
The method according to claim 1,
Wherein the alcohol amine compound is 0.00001 wt% to 10 wt% of the cleaning liquid composition.
Cleaning liquid composition.
상기 계면활성제는, 비이온성 계면활성제며,
상기 비이온성 계면활성제는, 폴리옥시에틸렌알킬에테르, 폴리옥시에틸렌 아릴 에테르 폴리옥시에틸렌아릴에테르, 폴리옥시에틸렌알케닐에테르, 폴리옥시알킬렌알킬페닐에테르, 폴리옥시알킬렌글리콜, 폴리옥시에틸렌모노알킬레이트, 폴리에틸렌글리콜, 폴리옥시에틸렌 글리콜 알킬 에테르, 옥타에틸렌 글리콜 모노도데실 에테르, 펜타에틸렌 글리콜 모노도데실 에테르, 폴리옥시프로필렌 글리콜 알킬 에테르, 글루코사이드 알킬 에테르, 데실 글루코사이드 알킬 에테르, 라우릴 글루코사이드 알킬 에테르, 옥틸 글루코사이드 알킬 에테르, 폴리옥시에틸렌 글리콜 알킬페놀 에테르, 글리세롤 알킬 에스터 (Glycerol alkyl esters), 폴리에틸렌 글리콜 소르비탄 알킬에스터 (Polyoxyethylene glycol sorbitan alkyl esters), 폴리소르베이트 20, 40, 60, 80 (Polysorbate 20, 40, 60, 80), 소르비탄 알킬 에스터 (Sorbitan alkyl esters), 및 (폴리옥시에틸렌ㆍ폴리옥시프로필렌) 공중합체로 이루어진 군에서 선택된 1종 이상을 포함하는 것인,
세정액 조성물.
The method according to claim 1,
The surfactant is a nonionic surfactant,
The nonionic surfactant may be selected from the group consisting of polyoxyethylene alkyl ether, polyoxyethylene aryl ether polyoxyethylene aryl ether, polyoxyethylene alkenyl ether, polyoxyalkylene alkyl phenyl ether, polyoxyalkylene glycol, polyoxyethylene monoalcohol Polyoxypropylene glycol alkyl ether, glucoside alkyl ether, decyl glucoside alkyl ether, lauryl glucoside alkyl ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl ether, polyoxyethylene alkyl ether, Octyl glucoside alkyl ethers, polyoxyethylene glycol alkyl phenol ethers, glycerol alkyl esters, polyoxyethylene glycol sorbitan alkyl esters, polysorbate 20, 40, 60, 80 (Polysorbate 20, 40, 60, 8 0), sorbitan alkyl esters, and (polyoxyethylene / polyoxypropylene) copolymers.
Cleaning liquid composition.
상기 계면활성제는, 상기 세정액 조성물 중 0.00001 중량% 내지 10 중량%인 것인,
세정액 조성물.
The method according to claim 1,
Wherein the surfactant is 0.00001 wt% to 10 wt% of the cleaning liquid composition.
Cleaning liquid composition.
산성 물질 또는 염기성 물질을 포함하는 pH 조절제;를 더 포함하고,
상기 산성 물질은, 질산, 염산, 인산, 황산, 불산, 브롬산, 요오드산, 포름산, 말론산, 말레인산, 옥살산, 초산, 아디프산, 구연산, 아디프산, 아세트산, 프로피온산, 푸마르산, 유산, 살리실산, 피멜린산, 벤조산, 숙신산, 프탈산, 부티르산, 글루타르산, 글루타민산, 글리콜산, 락트산, 아스파라긴산, 타르타르산 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함하고,
상기 염기성 물질은, 암모늄메틸프로판올(ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨, 이미다졸 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함하는 것인,
세정액 조성물.
The method according to claim 1,
Further comprising a pH adjusting agent comprising an acidic or basic substance,
The acidic substance may be at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, At least one member selected from the group consisting of salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid,
The basic substance may be at least one selected from the group consisting of ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, Sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate,
Cleaning liquid composition.
상기 세정액 조성물은, 암모니아수-프리인 것인,
세정액 조성물.
The method according to claim 1,
Wherein the cleaning liquid composition is ammonia water-free,
Cleaning liquid composition.
상기 세정액 조성물의 pH는, 7 내지 13의 범위인 것인,
세정액 조성물.
The method according to claim 1,
Wherein the pH of the cleaning liquid composition is in the range of 7 to 13. < RTI ID = 0.0 >
Cleaning liquid composition.
상기 세정액 조성물은, 금속, 금속산화물 또는 이 둘을 갖는 반도체 기판의 연마 후 세정액으로 사용되는 것인,
세정액 조성물.
The method according to claim 1,
Wherein the cleaning liquid composition is used as a polishing liquid for polishing a semiconductor substrate having a metal, a metal oxide, or both.
Cleaning liquid composition.
상기 금속은, 텅스텐, 구리, 티타늄, 탄탈, 루테늄 및 코발트로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 세정액 조성물.
14. The method of claim 13,
Wherein the metal comprises at least one selected from the group consisting of tungsten, copper, titanium, tantalum, ruthenium, and cobalt.
상기 세정액 조성물은, 텅스텐막에 비부식성인 것인,
세정액 조성물.
The method according to claim 1,
Wherein the cleaning liquid composition is noncorrosive to a tungsten film.
Cleaning liquid composition.
상기 세정액 조성물은, 텅스텐 연마 후 세정액으로 사용되는 것인,
세정액 조성물.
The method according to claim 1,
Wherein the cleaning liquid composition is used as a cleaning liquid after tungsten polishing.
Cleaning liquid composition.
상기 세정액 조성물은, 텅스텐(W)의 용출속도가 0.1 (Å/min) 이하인 것인,
세정액 조성물.
The method according to claim 1,
Wherein the cleaning liquid composition has a dissolution rate of tungsten (W) of 0.1 (A / min) or less,
Cleaning liquid composition.
상기 세정액 조성물은, 0 mV 내지 -200 mV의 제타전위를 갖는 것인,
세정액 조성물.
The method according to claim 1,
Wherein the cleaning liquid composition has a zeta potential of 0 mV to -200 mV.
Cleaning liquid composition.
상기 세정액 조성물은, 40 ° 이하의 표면 접촉각을 갖는 것인,
세정액 조성물.
The method according to claim 1,
Wherein the cleaning liquid composition has a surface contact angle of 40 DEG or less.
Cleaning liquid composition.
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| KR102443277B1 (en) * | 2022-07-15 | 2022-09-15 | 이엘플러스 주식회사 | Multipurpose CLEANING SOLUTION COMPOSITION with Eco-friendly And Hypoallergenic Properties |
| KR20220168822A (en) * | 2021-06-17 | 2022-12-26 | 주식회사 케이씨텍 | Cleaning solution composition and cleaning method using the same |
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| KR20220168822A (en) * | 2021-06-17 | 2022-12-26 | 주식회사 케이씨텍 | Cleaning solution composition and cleaning method using the same |
| KR102443277B1 (en) * | 2022-07-15 | 2022-09-15 | 이엘플러스 주식회사 | Multipurpose CLEANING SOLUTION COMPOSITION with Eco-friendly And Hypoallergenic Properties |
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