KR20190063587A - Substrate pedestal having atomic layer deposition process monitoring and self monitoring function and atomic layer deposition process with the same apparatus - Google Patents

Abstract

According to one embodiment of the present invention, a substrate support having deposition process and self-monitoring functions includes: a support unit supporting a substrate; an electrostatic electrode included in the support unit and supplied with electricity from an electrostatic chuck power supply unit to chuck and de-chuck the substrate; a heating unit included in the support unit and controlling temperature of the substrate; a process monitoring circuit receiving an RF signal from at least one of the electrostatic electrode or the heating unit and measuring electrical parameters included in the RF signal; and a control unit receiving the electrical parameters from the process monitoring circuit and monitoring a deposition degree and the presence or absence of an abnormality of the support unit based on the electrical parameters.

Description

FIELD OF THE INVENTION The present invention relates to a substrate support having an atomic layer deposition process and a self-monitoring function, and an atomic layer deposition process apparatus having the same.

The present invention relates to a substrate support having an atomic layer deposition process and a self-monitoring function, and an atomic layer deposition process facility having the same.

Generally, a semiconductor device is completed by repeatedly carrying out a manufacturing process on a silicon wafer. The semiconductor manufacturing process is a process of oxidizing, masking, photoresist coating, etching, diffusion, Afterwards, several processes such as washing, drying and inspection should be performed.

Plasma enhanced chemical vapor deposition (PECVD) is commonly used to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, liquid crystal display (LCD) substrates, and organic light emitting diode (OLED) displays . PECVD can generally be achieved by introducing a precursor gas into a process chamber having a substrate that rests on a substrate support. The process gases may be supplied to the remote plasma chamber located outside the process chamber prior to entering the process chamber. A portion of the precursor gas can typically be directed through the remote plasma chamber to be introduced into the process chamber in a gaseous state. The precursor gas may then flow to a distribution plate that is located near the top of the process chamber. The precursor gas can be excited in the process chamber by applying radio frequency (RF) power to the chamber from one or more RF sources coupled to the chamber. The excited gases are reacted to form a layer of material on the surface of the substrate positioned on a temperature controlled substrate support. The distribution plate is typically connected to an RF power source, and the substrate support is typically connected to the chamber body to provide an RF current return path.

2. Description of the Related Art As a semiconductor integrated device has become smaller in size and more complicated in planarization, a deposition technique capable of applying a uniform thin film with a high step coverage has become important. In addition, the thin film is required to have uniformity of composition and excellent electrical characteristics in order to satisfy not only the coating property which is uniformly deposited even in a complicated structure but also the insulating property and diffusion preventing property required in the device.

Accordingly, a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, and an atomic layer deposition (ALD) process were used for the deposition process. Physical vapor deposition can be used mainly for metal deposition. Chemical vapor deposition can be used mainly for silicon and dielectric deposition. The thin film deposited on the substrate in the deposition process must be able to precisely control the uniform thickness and uniformity. Parameters to be considered for uniform deposition include the thickness and density of the thin film deposited on the substrate, the energy and temperature of the process gas, and the uniformity of the process gas for deposition. Particularly, the control of radio frequency (RF), which is a driving force for ionizing the process gas and depositing the ionized process gas on the substrate, can be an important parameter and can be directly and easily adjusted in the actual deposition process .

Atomic Layer Deposition (ALD) is a process that deposits atoms one layer at a time, and can be performed where finer processing is required. The difference from CVD is that it takes a long time to make thin films but has the advantage of making thinner films.

The apparatus for performing a deposition process includes a process chamber for processing a semiconductor substrate, an electrode to which a radio frequency (RF) power source for forming a reaction gas supplied to the process chamber into a plasma state is applied, Substrate support.

2. Description of the Related Art Generally, in a deposition process using a plasma in a process for manufacturing a semiconductor device, a mechanical chuck that chucks a substrate physically using a conventional clamp in accordance with high integration of a semiconductor device, ), An electrostatic chuck for effectively chucking the substrate by using the static electricity of the substrate is mainly used.

In other words, the mechanical chuck is chucked by pushing the substrate by using a clamp, so that the die of the edge of the substrate is damaged or the yield is decreased as the substrate is bent. An electrostatic chuck for chucking the substrate without using physical force is used.

The substrate support provided in the process chamber for chucking the substrate may include an electrostatic chuck. The substrate support may include a pedestal supported by a support member, a heater positioned over the pedestal, and an electrode. The pedestal is a member to which a high frequency power source is applied to form a plasma used in a deposition process. The pedestal serves as a support for the electrode, and a copper bar is provided at the center thereof to apply a voltage to the electrode. The heater can adjust the temperature of the substrate that is seated on the substrate support. The electrode can be a dielectric for generating electrostatic force on its surface. The electrode receives power from the pedestal to induce electrostatic force to absorb the substrate, and the dielectric formed on the electrode surface serves as a power failure.

In order to determine the degree of deposition (thickness of the substrate) of the layer to be deposited while the plasma process is being performed, the substrate is unloaded after the plasma process and transferred to a separate measuring device to measure the degree of deposition. Therefore, there is a disadvantage that the entire plasma process time is increased because the plasma process must be stopped in order to unload the substrate. In addition, in the process of discharging the substrate to the outside, the substrate is often contaminated and defective products are often generated.

It is an object of the present invention to provide an atomic layer deposition process and a self-monitoring function capable of confirming the degree of deposition of a substrate and the state of a substrate support by measuring and monitoring the degree of deposition of a layer deposited during a process- And an atomic layer deposition process apparatus having the same.

According to an aspect of the present invention, there is provided a substrate support having an atomic layer deposition process and a self-monitoring function, comprising: a support for supporting a substrate; An electrostatic electrode that is included in the supporting unit and receives electric power from the electrostatic chuck power supply unit to chuck and defocus the substrate; A heating unit included in the supporting unit to control a temperature of the substrate; A process monitoring circuit for receiving an RF signal from at least one of the electrostatic electrode or the heating unit and measuring an electrical parameter included in the RF signal; And a controller for receiving electrical parameters from the process monitoring circuit and monitoring the degree of atomic layer deposition of the substrate or abnormality of the support based on the electrical parameters.

In the embodiment, the electrostatic chuck power supply part may be connected to the support part so that the substrate can be chucked and dechucked by the support part.

In an embodiment, the apparatus may further include a voltage divider circuit provided between the electrostatic electrode and the process monitoring circuit.

In an embodiment, the apparatus may further include a voltage dividing circuit provided between the heating unit and the process monitoring circuit.

In an exemplary embodiment, the power supply unit supplies power to the electrostatic electrode. And a switching circuit that is switched so that the electrostatic electrode is selectively connected to the power supply unit or the process monitoring circuit.

The electrostatic chuck power supply unit may further include a filter circuit for preventing the AC power from flowing into the electrostatic chuck power supply unit.

In an embodiment, the switching circuit may include one or more of the heating unit or the electrostatic electrode to be connected to the process monitoring circuit.

In an embodiment, the heat generating portion may include one or more heat lines.

An atomic layer deposition process facility according to an embodiment of the present invention includes a substrate support; A process chamber in which the substrate support is disposed; A plasma source for discharging the plasma into the process chamber; And a remote plasma chamber provided outside the process chamber for discharging the plasma, and may monitor the degree of deposition of the substrate supported on the substrate support during the atomic layer deposition process or the abnormality of the substrate support.

In an embodiment, the plasma source comprises: an upper electrode disposed above the process chamber; A lower electrode facing the upper electrode; And a power supply connected to the upper electrode or the lower electrode to supply electric power, so that plasma capacitively coupled into the process chamber can be discharged.

In an embodiment, the plasma source comprises: a dielectric window provided in the process chamber; And an antenna coil installed in the dielectric window to induce an electric field into the process chamber, so that the plasma induced in the process chamber can be discharged.

In an embodiment, the apparatus may further include a ferrite core for concentrating the magnetic field induced in the antenna coil into the process chamber.

In an embodiment, the plasma source comprises: a dielectric window provided in the process chamber; An antenna coil installed in the dielectric window to induce an electric field into the process chamber; And an electrode portion included in the process chamber, the plasma capacitively coupled to the plasma induced in the process chamber may be discharged.

The effect of the atomic layer deposition process and the atomic layer deposition process facility having the self-monitoring function and the substrate support according to the present invention will be described as follows.

According to at least one of the embodiments of the present invention, the state of the substrate and the substrate support can be determined by measuring and monitoring the degree of deposition of the layer deposited during the process of atomic layer deposition, atomic layer deposition using an RF signal have. Also, since the degree of deposition of the layer deposited during the process can be accurately measured, the defect rate of the product can be lowered. In addition, since the deposition process is not stopped to check the degree of deposition of the substrate, the productivity can be improved.

1 is a view illustrating an atomic layer deposition process facility according to a preferred embodiment of the present invention.
2 is a view illustrating a substrate support according to a preferred embodiment of the present invention.
FIG. 3 is a graph showing an example in which an abnormality of the substrate support can be determined using RF measurement parameters.
4 is a view showing a substrate support according to another preferred embodiment of the present invention.
FIG. 5 is a view illustrating a process of performing a substrate deposition process using the atomic layer deposition process facility of FIG.
6 is a view illustrating a substrate support according to another preferred embodiment of the present invention.
7 is a view showing a substrate support according to another preferred embodiment of the present invention.
8 is a view showing a substrate support according to another preferred embodiment of the present invention.
9 is a view showing a substrate support according to another preferred embodiment of the present invention.
10 is a diagram showing Tx and Rx signals according to time.
11 is a view showing an atomic layer deposition process facility using an antenna coil.
12 is a view showing another embodiment of an atomic layer deposition process facility using an antenna coil.
13 is a view showing an atomic layer deposition process facility using an antenna coil and an electrode.
14 is a view illustrating a process of performing a substrate deposition process using an atomic layer deposition process facility according to a preferred embodiment of the present invention.
15 is a view showing various embodiments of a preferred electrostatic electrode of the present invention.
16 is a view showing various modified embodiments of the heater.
Fig. 17 is a view showing a configuration of a substrate support table using the heater of Fig. 16;
18 is a view showing a substrate support of another preferred embodiment of the present invention.
19 is a diagram showing transmission and reception signals of an RF signal according to the thickness of a substrate.
20 is a graph showing changes in RF signals and capacitances transmitted and received during the atomic layer deposition process and the cleaning process.
21 is a view illustrating a process of monitoring a substrate support using an atomic layer deposition process facility according to a preferred embodiment of the present invention.
22 is a view illustrating a process of cleaning using a cleaning process facility according to a preferred embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. , ≪ / RTI > equivalents, and alternatives.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The singular expressions include plural expressions unless the context clearly dictates otherwise.

In the present application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. It will be apparent to those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

1 is a view illustrating an atomic layer deposition process facility according to a preferred embodiment of the present invention.

Referring to FIG. 1, an atomic layer deposition process facility 100 of the present invention may include a process chamber 110, a plasma source, and a gas supply unit 120.

The process chamber 110 is provided with a space in which a plasma discharge is generated, and a substrate support 140 for supporting the substrate 112 to be processed by the plasma may be provided. The plasma discharge can be used to excite the gas to produce an activated gas containing ions, free radicals, atoms and molecules. Activated gases are used in a variety of industrial and scientific fields, including treating solid materials such as semiconductor wafers, powders, and other gases.

Plasma sources for plasma discharge include an inductively coupled plasma (ICP) source, a transformer coupled plasma (TCP) source, a capacitively coupled plasma (CCP) source, and a hybrid And a hybrid plasma source. RF energy can be supplied into the process chamber by a plasma source. The plasma is discharged in the process chamber 110 by RF energy, and the process gas supplied into the process chamber 110 can be excited by the plasma. Thus, the RF energy is a fundamental RF frequency and can be radiated with harmonics of the RF frequency. The harmonic frequency may be generated within the plasma 130.

FIGS. 1 to 9 disclose a plasma discharge structure using capacitively coupled plasma, FIGS. 11 and 12 disclose a plasma discharge structure using inductively coupled plasma, and FIG. 13 illustrates a plasma discharge structure using hybrid plasma. . A detailed description will be given later.

The process chamber 110 may be provided with an upper electrode 130 for capacitively coupled plasma. The upper electrode 130 may be installed on the ceiling of the process chamber 110 in the form of a showerhead. The supply amount of the process gas supplied from the plurality of gas supply units 120a, 120b, 120c, and 120d can be controlled by the plurality of valves 122a, 122b, 122c, and 122d.

Some of the plurality of gas supply units 120a, 120b, 120c, and 120d may be supplied to the remote plasma chamber 170. The supplied gas may be used for plasma generation. And the rest may be supplied into the process chamber 110 through the upper electrode 130. The gas supplied through the top electrode 130 may be used to perform an atomic layer deposition (ALD) process in the process chamber 110.

The upper electrode 130 may be driven by receiving a radio frequency from one or more power supply units 114 and 115. The one or more power supplies 114, 115 may supply the same radio frequency or may supply different radio frequencies. For example, one power supply 114 may supply a high frequency power and the other power supply 115 may supply a low frequency power. One or more power supplies 114 and 115 may supply power to the upper electrode 130 through an impedance matcher 117. The electrostatic chuck 140 may function as a lower electrode so as to face the upper electrode 130.

The upper portion of the process chamber 110 may be provided with a remote plasma chamber 170 for discharging plasma to discharge radicals for substrate processing. The remote plasma chamber 170 receives the process gas from the gas supply unit 120, receives the radio frequency from the power supply unit 172, discharges the plasma, and discharges radicals for the deposition process. Radicals discharged from the remote plasma chamber 170 may be fed directly into the process chamber 110. Or the radicals discharged from the remote plasma chamber 170 may be supplied into the process chamber 110 through the gas inlet 132 of the upper electrode 130.

The remote plasma chamber 170 may be an inductively coupled plasma (ICP) source, a transformer coupled plasma (TCP) source, a capacitively coupled plasma (CCP) source, a transfer coupled plasma (TCP) source, and a hybrid plasma source.

 Inside the process chamber 110, a substrate support 140 for supporting the substrate 112 may be provided. The substrate support 140 may include a support 142 supported by the substrate support member, a heating portion 143 provided on the support portion 142, and an electrostatic electrode 146 provided on the heating portion 143 have. The supporting portion 142 may function as an electrode by a high frequency power source member for forming a plasma used in a deposition process. The support portion 142 may also refer to the entire configuration for supporting the substrate.

The heat generating part 143 is connected to the heat generating part power source 168 to heat the mounted substrate 112. The heat generating unit 143 may be provided as a heat ray generated by a power source applied from the heat generating unit power source 168. The heat generating part 143 may be provided on the supporting part 142 by being surrounded by the insulating layer 145. A filter circuit 167 may be provided between the heat generating part 143 and the heat generating part power supply 168. The filter circuit 167 can prevent the AC power supplied to the upper electrode 130 from flowing into the heater power supply 168 during the plasma process. The filter circuit 168 removes power signals (noise signals) that may be generated in the heat generating portion 143 by the RF signal so that the power from the heat generating portion power source 168 to the heat generating portion 143 And the RF signal can be prevented from flowing into the heating unit power supply 168 to prevent a failure that may occur.

An electrostatic electrode 146 may be provided on the upper part of the heat generating part 143. The electrostatic electrode 146 may be surrounded by the insulating layer 144 and may be provided on the heat generating portion 143. A substrate 112, which is processed through a plasma process, may be placed on the electrostatic electrode 146. The electrostatic electrode 146 is supplied with DC power from the electrostatic chuck power supply unit 148 to induce electrostatic force and can be fixed by chucking the substrate 112 seated on the electrostatic electrode 146 using the electrostatic electrode 146.

A filter circuit 147 may be provided between the electrostatic chuck power supply 148 and the electrostatic electrode 146. The filter circuit 147 can prevent the AC power supplied to the upper electrode 130 from flowing into the electrostatic chuck power supply 148 during the plasma process. The filter circuit 147 supplies the electrostatic chuck power supply 148 to the electrostatic electrode 146 in a stable manner by removing the power signals (noise signals) that may be generated in the electrostatic electrode 146 by the RF signal. It is possible to supply power and to prevent a malfunction that may occur due to the introduction of an RF signal into the electrostatic chuck power supply 148. [ The RF signal can be a high frequency, or a cursed file. The process chamber 110 may be connected to an exhaust port by an exhaust pump 116 for forming the inside of the process chamber 110 in a vacuum or discharging unreacted gas or the like.

The heat generating portion 143 may be located below the electrostatic electrode 146 or may be located above the electrostatic electrode 146. [ Or the heat generating portion 143 and the electrostatic electrode 146 may be located on the same line.

At least one of the heat generating part 143 and the electrostatic electrode 146 may serve as an antenna for receiving an RF signal. The heating portion 143 or the electrostatic electrode 146 can receive an RF signal emitted in real time during the plasma discharge into the process chamber 110. The upper electrode 130 may function as a transmitter for transmitting an RF signal. RF signals may be input through the heating portion 143 or the electrostatic electrode 146 to be received by the process monitoring circuit 152. The process monitoring circuit 152 may measure the electrical parameters of the received RF signal. Here, the electrical parameters include at least one of an electric current, a voltage, a current peak value, a voltage peak value, or an impedance value in the process chamber 110 as an electrical parameter correlated with the contamination inside the process chamber 110, Or more. The contamination inside the process chamber 110 means that the process chamber 110 is contaminated by the substance deposited inside while the process of depositing the substrate 112 is being performed.

The RF signal emitted into the process chamber 110 may be received by the heating portion 143 or the electrostatic electrode 146 through the substrate 112. Here, the substrate 112 may include a laminated thin film. Therefore, the thin film of the substrate 112 can function as a dielectric. Therefore, the RF signal received by the electrostatic electrode 146 may change in correlation with the thickness of the substrate 112 (thickness including the thin film). For example, the thicker the substrate 112, the higher the resistance, and the RF signal can be weakly received through the heating portion 143 or the electrostatic electrode 146. The thickness of the substrate 112 and the deposition process can be monitored by setting the electrical parameters of the RF signal according to the thickness of the substrate 112 and comparing it with the measured RF signal. This also confirms the end point of the deposition process to stop the deposition process. The end point of the deposition process may refer to a time when the deposition process for the substrate 112 should be stopped according to the deposition process. In addition, the abnormality (self-monitoring) of the substrate support 140 can be monitored based on the electrical parameters. The heating unit 143 or the electrostatic electrode 146 may be driven to receive the RF signal and the RF unit 140 may be configured to receive the RF signal by driving both the heating unit 143 and the electrostatic electrode 146 It is possible.

The control unit 154 may receive the electrical parameters of the RF signal from the process monitoring circuit 152. The control unit 154 monitors the degree to which the thin film of the substrate 112 has been deposited when the deposition process is proceeding in the process chamber 110 via the RF signal based on the electrical parameters of the received RF signal can do. Therefore, the end point of the deposition process for depositing the substrate 112 can be confirmed. In addition, the abnormality of the substrate support 140 can be monitored based on the electrical parameters. The control unit 154 may transmit the identified electrical parameters to the host computer 156. [ The control unit 154 can control the power supply units 114 and 115, the valve 122, the heater unit power supply 168, and the electrostatic chuck power supply unit 148 based on the electrical parameters.

The control unit 154 is composed of a module for performing signal processing, and can be either hardware or software. The controller 154 may compare the electrical parameter of the RF signal received via the process monitoring circuit 152 with the electrical parameter of the steady signal to determine whether the substrate support 140 is abnormal. In addition, the controller 154 may include an alarm function to inform the outside of the substrate supporter 140 by an audible or visual means when an abnormality occurs in the substrate supporter 140.

The control unit 154 compares the accumulated error data with the set error tolerance while comparing the electrical parameters of the RF signal and the electrical signals of the normal signal that have passed through the process monitoring circuit 152 to process the error data have.

The electrical parameters of the RF signal received by the control unit 154 may be obtained by using the original signal transmitted from the process monitoring circuit 152 as it is or using a signal modulated in a form that is easy to analyze through separate signal processing It is possible. Also, the connection of the process monitoring circuit 152 and the control unit 154 may be made either as a direct connection or as a coupling method so as not to affect the load of the electrostatic chucking system itself.

2 is a view illustrating a substrate support according to a preferred embodiment of the present invention.

2, the substrate support 240 may receive an RF signal through the voltage divider circuits 249 and 269. [ The voltage dividing circuits 249 and 269 can be used as a means for receiving the RF signal from the electrostatic electrode 246 and the heat generating portion 243. The voltage dividing circuits 249 and 469 may be provided as capacitors.

The electrical parameters measured at the process monitoring circuit 252 via the voltage dividing circuits 249 and 469 may be transmitted to the control unit 254. [ The controller 254 may monitor the degree of deposition of the substrate 212 and the abnormality of the substrate support 240 based on the electrical parameters.

The substrate support 240 may include filter circuits 247 and 267 using inductors. The filter circuits 247 and 267 can prevent the AC power supplied to the upper electrode 130 from flowing into the heater power supply 268 and the electrostatic chuck power supply 248 during the plasma process.

The supporting portion 242, the insulating layer 245, and the insulating layer 244 of the substrate support 240 perform the same configurations and functions as those described above with reference to FIG.

FIG. 3 is a graph showing an example in which an abnormality of the substrate support can be determined using RF measurement parameters.

Referring to FIG. 3, RF signal measurement parameters are plotted against contamination thickness (substrate thickness or deposition process progress time). As described above, there may be a constant correlation between the contamination thickness (the thickness of the substrate or the duration of the deposition process) and the electrical parameter values of the received RF signal.

As can be seen from the graph, when the contamination thickness is increased (the deposition process proceeds for a predetermined time), the RF signal received through the heating unit or the electrostatic electrode is weakened, thereby reducing the measured value of the RF measurement parameter.

If an abnormality occurs in the substrate support, an RF signal received through the heating part or the electrostatic electrode may receive a value (non-normal value) that is not a constant correlation electrical parameter value. Therefore, it is possible to monitor the abnormality of the substrate support (self-monitoring function) based on the electrical parameters of the RF signal received through the heating part or the electrostatic electrode.

4 is a view showing a substrate support according to another preferred embodiment of the present invention.

Referring to FIG. 4, the substrate support 440 may include a heating portion 443 inside the support portion 442. The heat generating portion 443 may be connected to the heat generating portion power source 468 through the filter circuit 467. The heating portion 443 may be coupled to the process monitoring circuit 452 to serve as an antenna for receiving the RF signal. The heating unit 443 is driven to receive RF signals radiated into the process chamber through the heating unit 443 and to measure the parameters of the received RF signals via the process monitoring circuit 452 have. The measured parameter may be transmitted to the control unit 454. [ The control unit 454 can determine whether the substrate support 440 is normal by comparing the measured parameter with the parameter value of the steady state. In addition, since the parameter value varies depending on the thickness of the substrate 412, the thickness of the substrate 412 can be confirmed through the measured parameter value.

Therefore, the control unit 454 can monitor the degree to which the film is deposited on the substrate 412. [ Further, based on the degree of deposition of the film on the substrate 412, it is possible to confirm the timing of ending the deposition process (the end point of the deposition process). The control unit 254 can control at least one of the power supply units 114 and 115, the valve 122, and the heating unit power supply 468 based on the electrical parameters.

FIG. 5 is a view illustrating a process of performing a substrate deposition process using the atomic layer deposition process facility of FIG.

Referring to FIG. 5, a substrate may be loaded into a process chamber of an atomic layer deposition process facility. After the substrate is loaded, an atomic layer deposition process for the substrate may be performed in the process chamber. Before proceeding with the atomic layer deposition process, it is possible to monitor the abnormality of the substrate supporter by receiving an RF signal using a heating part or an electrostatic electrode. If the substrate support is normal, an atomic layer deposition process for the substrate can proceed in the process chamber. The thickness of the substrate can be measured using an RF signal while performing the atomic layer deposition process. It is therefore possible to detect the end point of when to terminate the atomic layer deposition process.

The atomic layer deposition process (ALD process) uses a vapor phase chemical vapor deposition (CVD) reaction, in which a precursor and a reactant are injected in a time-division manner to suppress a gas phase reaction and a self-limited reaction ) Is used to precisely control the thickness of the thin film to deposit.

By increasing the reactivity of the ALD reactors by applying plasma technology to the atomic layer deposition process, it becomes possible to realize multi-component multilayer thin films by widening the process temperature range, to increase the productivity by reducing purge time, The physical properties of the thin film can be improved.

A precursor may be first fed into the process chamber and deposited on the substrate. Thereafter, a precursor that is not seated on the substrate can be removed by feeding a precursor into the process chamber. As the purge gas, an inert gas such as argon, helium, or the like may be used. After the reactant is supplied, a purge gas may be supplied again.

The gas supplied for atomic layer deposition may be supplied into the process chamber through the plasma chamber or may be supplied directly to the process chamber without through the plasma chamber.

The time and amount of supply of the source gas may be variously performed depending on the recipe for the substrate processing. In addition, various types of process gases may be used depending on the process recipe.

The precursor may be supplied as a source gas for a predetermined time and adsorbed on the substrate. The source gas may be a precursor gas of the material constituting the desired thin film. The fact that the pulse is supplied for a predetermined time means that it is supplied at a constant flow rate only for a predetermined time and then cut off, and can be used in the same sense in the following. Preferably, the source gas is first supplied and then power is supplied at a predetermined time interval to convert the source gas into a plasma state. As the source gas, NF3, N2, Ar, O2, SF6, NH3, H2, He, H2SO4, HCl, F2, HF, Cl2, BCl3, NOx, H2S, SiH4, Si2H6, PH3 and AsH3 can be used.

The substrate may be loaded into the process chamber and the substrate may be unloaded out of the process chamber after the process is complete. Or when multiple process gases are used in one process, each process gas may be supplied. Such a cycle can be repeatedly performed in order to deposit a plurality of thin film layers on a substrate according to the thickness of the thin film required in a semiconductor manufacturing process.

After the atomic layer deposition process has been performed only once, the substrate may be unloaded out of the process chamber and a new substrate may be loaded into the process chamber. Or the substrate may be unloaded out of the process chamber after multiple iterations.

After the deposition process has been carried out more than once, the contamination inside the process chamber can be cleaned. The degree of contamination inside the process chamber can be measured in a variety of ways and can be confirmed by receiving an RF signal using a substrate support. The contamination inside the process chamber is measured to detect the point at which cleaning is required. If it is determined that cleaning is necessary, the cleaning process for the process chamber can be performed without continuing the atomic layer deposition process. Here, the cleaning process may proceed after unloading the substrate in the process chamber to the outside.

The cleaning process may be performed using a remote plasma chamber. If it is determined that a cleaning process is required, the control unit may control the power supply unit so that the plasma can be discharged into the remote plasma chamber. At this time, the remote plasma chamber can be supplied with the cleaning gas for cleaning the inside of the process chamber from the gas supply unit according to the control signal of the control unit. In the remote plasma chamber, the cleaning gas can be converted to radicals and fed into the process chamber.

The parameters of the RF signal can be measured through the heating element or the electrostatic electrode, and the degree of deposition of the material deposited in the process chamber can be checked using this parameter. Therefore, the point at which the cleaning process is terminated (the end point of the cleaning process) can be monitored using the heat generating portion or the electrostatic electrode.

After the cleaning process is completed, the substrate may be loaded into the process chamber again to perform the atomic layer deposition process of the substrate.

6 is a view illustrating a substrate support according to another preferred embodiment of the present invention.

Referring to FIG. 6, a bias power source part 662 may be connected to the support part 642 of the substrate support 640. The support portion 642 can receive power through the impedance matcher 664 and the capacitor 666. The support 642 may function as a lower electrode opposite the upper electrode when the upper electrode of the process chamber is provided. Or the process chamber may be connected to ground. The electrostatic electrode 646 wrapped by the insulating layer 644 is supplied with electric power from the electrostatic chuck power supply unit 648 connected through the filter circuit 647 to induce electrostatic force for chucking the substrate 612 have.

The electrostatic electrode 646 also functions as an antenna for receiving an RF signal and can receive an RF signal. The received RF signal is delivered to the process monitoring circuit 652 via the voltage divider circuit 649 and the process monitoring circuit 652 can deliver the electrical parameters of the RF signal to the controller 654.

Also, the heat generating unit 643 may function as an antenna for receiving an RF signal to receive an RF signal. The received RF signal is delivered to the process monitoring circuit 652 via the voltage divider circuit 669 and the process monitoring circuit 652 can deliver the electrical parameters of the RF signal to the controller 654. [ The heat generating portion 643 may be connected to the heat generating portion power source 668 through the filter circuit 667.

The control unit 554 controls the deposition end point of the substrate 612 or the substrate support 640 based on the electrical parameters of the RF signal measured at the process monitoring circuit 652 via the heating unit 643 or the electrostatic electrode 646. [ ) Can be monitored.

The electrostatic electrode 646 is supplied with electric power from the electrostatic chuck power supply 648 and can be used to chuck the substrate 612 by inducing electrostatic force and is connected to the bias power supply 662, . ≪ / RTI > The electrostatic electrode 646 can be supplied with power through the impedance matcher 664 and the capacitor 666. The electrostatic electrode 646 may function as a lower electrode opposite the upper electrode when the upper electrode is provided in the process chamber. Or the process chamber may be connected to ground.

7 is a view showing a substrate support according to another preferred embodiment of the present invention.

7, the support portion 742 of the substrate support 740 may be connected to the bias power source portion 762 through the impedance matcher 764 and the capacitor 766 to function as a lower electrode.

At this time, the electrostatic chuck power supply unit 748 may be connected to the support unit 742 or the electrostatic electrode 746 so that electrostatic force is induced to the support unit 742 or the electrostatic electrode 746. The support portion 742 may function as a lower electrode, and an electrostatic force may be induced to chuck the substrate 112. A filter circuit 747 using an inductor may be provided between the support portion 742 and the electrostatic chuck power supply portion 748 and between the electrostatic electrode 746 and the electrostatic chuck power supply portion 748. The electrostatic electrode 746 is surrounded by an insulating layer 744. The heat generating portion 743 may be connected to the heat generating portion power source 768 through the filter circuit 767.

The electrostatic electrode 746 may be connected to the process monitoring circuit 752 via the first voltage divider circuit 749a. The support portion 742 may be connected to the process monitoring circuit 752 via a second voltage divider circuit 749b. Further, the heat generating portion 743 may be connected to the process monitoring circuit 752 through the third voltage dividing circuit 769.

The process monitoring circuit 752 can measure electrical parameter values from the support 742, the heat generating portion 743, and the electrostatic electrode 746. [ The electrical parameters measured at the process monitoring circuit 752 are transmitted to the control unit 754 which can monitor the abnormality of the deposition end point and the substrate support 740 based thereon.

The process monitoring circuit 752 measures the average value of the RF signal through the input signal detector and the output signal detector and transmits the measured average value to the controller 754 to compare the thickness of the substrate 712 with the data set for each thin film thickness, It can be judged.

8 is a view showing a substrate support according to another preferred embodiment of the present invention.

8, a bias power source unit 862 and an electrostatic chuck power supply unit 848 are connected to the electrostatic electrode 846 so that the electrostatic electrode 846 functions as a lower electrode, And can be used as a common electrode that can function as an electrostatic chuck. The electrostatic electrode 846 is connected to the bias power source 862 through the impedance matcher 864 and the capacitor 866 to be supplied with bias power. The electrostatic electrode 846 may be connected to the electrostatic chuck power supply 848 through the filter circuit 847 to be supplied with power for electrostatic induction. And may be connected to the process monitoring circuit 852 through the voltage divider circuit 849. .

The heating portion 843 may be connected to the heating portion power source 868 through the filter circuit 867. The heating portion 843 may function as an antenna for receiving an RF signal. The heating portion 843 receives the RF signal and may be connected to the process monitoring circuit 852 through the voltage divider circuit 869. [ The process monitoring circuit 852 can receive the electrical parameters of the RF signal. The electrical parameters received at the process monitoring circuit 852 may be communicated to the controller 854.

The control unit 854 can monitor the abnormality of the deposition end point and the substrate support 840 using the electrical parameters of the RF signal received through the heating unit 843 and the electrostatic electrode 846. [ The heat generating portion 843 and the electrostatic electrode 846 may be surrounded by the insulating layers 845 and 844.

FIG. 9 is a view showing a substrate support according to another preferred embodiment of the present invention, and FIG. 10 is a view showing Tx and Rx signals according to time.

9, the electrostatic electrode 946 wrapped with the insulating layer 944 may function as a transmitting antenna Tx for transmitting an RF signal, a receiving antenna 946 for receiving an RF signal, (Rx). The electrostatic electrode 946 may be connected to the electrostatic chuck power supply 948 through a filter circuit 947.

The electrostatic electrode 946 may be connected to the power supply unit 962 through an impedance matching unit 964 and a capacitor 966. The power supply 962 may be connected to the electrostatic electrode 946 through a switching circuit 970. The electrostatic electrode 946 connected to the power supply unit 962 may function as a transmission antenna Tx for transmitting an RF signal.

Electrostatic electrode 946 may be connected to process monitoring circuit 952 via voltage divider circuit 949. The electrostatic electrode 946 connected to the process monitoring circuit 952 may function as a receiving antenna Rx for receiving an RF signal. In other words, one tap of the switching circuit 970 may be connected to the power supply 962, and the other tap may be connected to the voltage divider circuit 949. The switching circuit 970 is controlled by the control unit 954 so that the power supply unit 962 or the voltage divider circuit 949 can be selectively connected to the electrostatic electrode 946.

Also, the heat generating unit 943 may function as an antenna for receiving an RF signal to receive an RF signal. The received RF signal is transmitted to the process monitoring circuit 952 through the voltage divider circuit 969 and the process monitoring circuit 952 can transmit the electrical parameter of the RF signal to the control unit 954. [

The heat generating portion 943 may be connected to the heat generating portion power source 968 through the filter circuit 967. The heat generating portion 943 can receive heat from the heat generating portion power source 968 and can transfer heat to the substrate 912 mounted on the substrate supporting portion 940 by being heated.

The heating unit 943 may function as an antenna for receiving an RF signal to receive an RF signal. The received RF signal is transmitted to the process monitoring circuit 952 through the voltage divider circuit 969 and the process monitoring circuit 952 can transmit the electrical parameter of the RF signal to the control unit 954. [

9 and 10, the control unit 954 controls the switching circuit 970 so that the electrostatic electrode 946 and the power supply unit 962 can be connected. Electrostatic electrode 946 may be driven to transmit an RF signal into the process chamber. The transmitted RF signal can be received through the electrostatic electrode 946 and the heating portion 943 through the substrate 912 seated on the electrostatic chuck 940.

The control unit 954 controls the switching circuit 970 so that the electrostatic electrode 946 and the voltage dividing circuit 949 can be connected. The RF signal transmitted into the process chamber is received through the electrostatic electrode 946 and the heating portion 943 and transferred to the process monitoring circuit 952. The process monitoring circuit 952 passes the electrical parameters of the RF signal to the control unit 954 so that the control unit 954 can monitor the abnormality of the deposition end point and the substrate support 940 based on such electrical parameters.

11 is a view showing a deposition process facility using an antenna coil.

Referring to FIG. 11, an inductively coupled plasma may be used as the plasma source. The ceiling of the process chamber 1100 is provided with a dielectric window 1130 and the antenna coil 1120 can be wound on top of the dielectric window 1130. The antenna coil 1120 may be wound on top of the dielectric window 1130 in a spiral shape. The antenna coil 1120 may be connected to the power supply unit 1140 through an impedance matching unit 1142. When power is applied to the antenna coil 1120, an electric field can be induced into the process chamber 1100 to discharge the plasma into the process chamber 1100. The gas supply for the plasma discharge may be fed into the process chamber 1100 through the dielectric window 1130 and directly through the process chamber 1100. A remote plasma chamber 1170 may be provided on top of the process chamber 1100.

The dielectric window 1130 may be formed entirely on the ceiling of the process chamber 1100 or only on the portion where the antenna coil 1120 is provided. The dielectric window 1130 may also be in the form of a flat plate and may be dome-shaped.

The antenna coils 1120 may be wound at regular intervals or at regular intervals. One antenna coil 1120 may be wound throughout the dielectric window 1130 and a plurality of antenna coils 1120 may be wound throughout the dielectric window 1130.

12 is a view showing another embodiment of an atomic layer deposition process facility using an antenna coil.

Referring to FIG. 12, an inductively coupled plasma may be used as the plasma source. The ceiling of the process chamber 1200 is provided with a dielectric window 1230 and the antenna coil 1220 can be wound on top of the dielectric window 1230. The antenna coil 1220 may be wound on top of the dielectric window 1230 in a spiral shape. The antenna coil 1220 may be connected to the power supply unit 1240 through an impedance matcher 1242. A horseshoe-shaped ferrite core 1222 may be provided on the antenna coil 1220. The ferrite core 1222 may be provided on top of the antenna coil 1220 so that the magnetic flux entry port faces the dielectric window 1230. [ Therefore, the magnetic field induced by the antenna coil 1220 can be concentrated by the ferrite core 1222 into the process chamber 1200, thereby concentrating the plasma discharge into the process chamber 1200 .

When power is applied to the antenna coil 1220, an electric field can be induced into the process chamber 1200 to discharge the plasma into the process chamber 1200. The gas supply for the plasma discharge may be fed into the process chamber 1200 via the dielectric 1230 and may be fed directly through the process chamber 1200.

The dielectric window 1230 may be formed entirely on the ceiling of the process chamber 1200 or only on the portion where the antenna coil 1220 is provided. The dielectric window 1230 may also be in the form of a flat plate and may be dome-shaped.

The antenna coils 1220 may be wound at regular intervals or at regular intervals. One antenna coil 1220 may be wound throughout the dielectric window 1230 and a plurality of antenna coils 1220 may be wound throughout the dielectric window 1230. [

13 is a view showing an atomic layer deposition process facility using an antenna coil and an electrode.

Referring to FIG. 13, a hybrid plasma in which an inductively coupled plasma and a capacitively coupled plasma are used together can be used as the plasma source. The central region of the ceiling of the process chamber 1300 is provided with an electrode portion 1335 and a dielectric window 1330 may be provided in a peripheral region of the electrode portion 1335. [ An antenna coil 1320 may be wound on the upper portion of the dielectric window 1330. The antenna coil 1320 may be wound on top of the dielectric window 1330 in a spiral shape. The antenna coil 1320 may be connected to the power supply unit 1340 through an impedance matcher 1342. The electrode unit 1335 may be connected to another power supply unit 1344 through an impedance matching unit 1346. An electrode opposed to the electrode portion 1335 may be provided inside the process chamber 1300. In another embodiment, the ceiling of the process chamber 1300 may have a dielectric window 1330 in the center region and an electrode portion 1335 in the peripheral region.

A horseshoe-shaped ferrite core 1322 may be provided on the antenna coil 1320. The ferrite core 1322 may be provided on top of the antenna coil 1320 so that the magnetic flux entrance is directed to the dielectric window 1320. [ The magnetic field induced by the antenna coil 1320 can be concentrated by the ferrite core 1322 into the process chamber 1300 so that the plasma discharge into the process chamber 1300 can be concentrated .

When electric power is supplied to the antenna coil 1320 and the electrode unit 1335, an electric field is induced into the process chamber 1300 by the antenna coil 1320 and the electrode unit 1335 and a hybrid plasma is introduced into the process chamber 1300 Can be discharged.

The dielectric window 1330 may be formed entirely on the ceiling of the process chamber 1300 or only on the portion where the antenna coil 1320 is provided. The dielectric window 1330 may also be in the form of a flat plate and may be dome-shaped.

The antenna coils 1320 may be wound at regular intervals or at regular intervals. A single antenna coil 1320 may also be wound throughout the dielectric window 1330 and multiple antenna coils 1320 may be wound throughout the dielectric window 1330.

14 is a view illustrating a process of performing a substrate deposition process using a deposition process facility according to a preferred embodiment of the present invention.

14 is a view illustrating a process of performing a substrate deposition process using an atomic layer deposition process facility according to a preferred embodiment of the present invention.

First, a substrate for carrying out the atomic layer deposition process into the process chamber may be loaded (S100). When the substrate is loaded on the substrate supporting table, the substrate supporting table receives electric power from the power supplying unit and electrostatic force can be induced to chuck the substrate (S110). At this time, as described above, the electrostatic chuck as the substrate support can monitor the abnormality of the heating unit and the substrate support using the RF signal received through the heating unit and the electrostatic electrode (S120).

If the substrate support is normal and the substrate support is normal, the atomic layer deposition process of the substrate may be performed (S130). The atomic layer deposition process may include supplying a precursor into the process chamber (S131), supplying a purge gas (purge) to remove the precursor that is not deposited on the substrate (S132), supplying the RF frequency to the plasma chamber A step S133 of turning on the plasma, a step S134 of supplying the reactant, a step S135 of turning off the supply of the RF frequency, and a step S136 of supplying the purge gas again can do. The atomic layer deposition process can deposit an atomic layer on a substrate by repeating the above process.

In the atomic layer deposition process, a remote plasma chamber may be used to supply the radicals according to the recipe. Thus, the remote plasma chamber may be used in an atomic layer deposition process or in a cleaning process.

The control unit may control a mass flow controller (MFC) or a gas supply unit to control the supply of the process gas supplied to the process chamber. The control unit may supply the process gas according to the deposition process recipe to be processed in the process chamber. After supplying the process gas, the control unit controls the power supply unit of the plasma source to supply a radio frequency (RF) frequency to the plasma source (S140). The plasma source to which the radio frequency is supplied may be driven to discharge (turn on) the plasma. When the plasma is discharged, a deposition process for depositing a substrate loaded inside the process chamber can be performed.

During the atomic layer deposition process, the controller may drive a process monitoring circuit to measure the internal contamination of the process chamber, and electrical parameters correlated with substrate deposition (S140). The controller may measure the deposition state of the substrate based on the measured electrical parameters and may detect the end point of the atomic layer deposition process (S150). If it is determined that the atomic layer deposition process is the end point, the control unit must control the power supply unit of the plasma source so that the radio frequency is not supplied to the plasma source. Or if it is not the end point of the deposition process, the deposition process can continue. If the radio frequency is not supplied to the plasma source, the plasma discharge can be turned off.

When the plasma discharge is off, the control unit may control the mass flow controller (MFC) or the gas supply unit to block the process gas from being supplied to the process chamber (S210). After completion of the deposition process by cutting off the process gas supply, the control unit controls the power supply unit to cut off power supplied to the substrate support, thereby dechucking the substrate (S160). The dechucked substrate may be unloaded out of the process chamber (S170). After the substrate is unloaded, it can be determined whether to clean the contaminated process chamber (S180).

The controller may terminate the atomic layer deposition process and proceed with the cleaning process if it is determined that process chamber cleaning is necessary. If it is determined that the process chamber cleaning is not required, the control unit can confirm whether there is a substrate to be subjected to the atomic layer deposition process in the process chamber (S190). If there is a substrate to be subjected to the atomic layer deposition process, the substrate can be processed by performing the atomic layer deposition process described above after loading the substrate.

15 is a view showing various embodiments of a preferred electrostatic electrode of the present invention.

Referring to FIG. 15, the electrostatic electrode 1540 provided on the substrate support may include two or more electrostatic electrode pieces. In the present invention, the electrostatic electrode can be described by showing two separated first electrostatic electrodes 1546a and second electrostatic electrodes 1546b.

First, the first electrostatic electrode 1546a and the second electrostatic electrode 1546b may be provided in the electrostatic chuck 1540 in a concentric circular structure. The first electrostatic electrode 1546a is located at the central region of the electrostatic chuck 1540 and the second electrostatic electrode 1546b may be positioned at a predetermined distance from the first electrostatic electrode 1546a. An insulating layer 1544 may be provided between the first electrostatic electrode 1546a and the second electrostatic electrode 1546b.

In another embodiment, the first electrostatic electrode 1546a and the second electrostatic electrode 1546b may each be formed in a semicircular shape. The first electrostatic electrode 1546a and the second electrostatic electrode 1546b may be provided on the substrate support 1540 so as to form a circular shape.

In another embodiment, the first electrostatic electrode 1546a and the second electrostatic electrode 1546b may include a plurality of twisted electrodes 1546c. The first electrostatic electrode 1546a may be provided with a plurality of twist electrodes 1546c in one direction. The plurality of twist electrodes 1546c of the first electrostatic electrode 1546a may be formed to have a predetermined length and the twist electrodes 1546c may be spaced apart from each other by a predetermined distance. The second electrostatic electrode 1546b may include a plurality of twisted electrodes 1546c in a direction facing the first electrostatic electrode 1546a. The first electrostatic electrode 1546a and the plurality of twist electrodes 1546c of the second electrostatic electrode 1546b face each other and can be disposed at an intersection so as not to overlap each other.

The shape of the electrostatic electrode is not limited to the embodiment shown in the present invention, and various modifications may be made.

Although not shown in the drawings, the substrate support in the present invention may function as an electrostatic chuck, and may be formed by one of a unipolar method and a bipolar method as a method for fixing a substrate. The Unipolar method can operate with simple electrical connection in such a way that the electrostatic electrode is charged with + or - to fix the substrate. The bipolar method may not require electrical connection to the substrate in a manner that the electrostatic electrode is charged with + and - to fix the substrate. Detailed description of the method of fixing the substrate of the electrostatic chuck is omitted in the known manner.

16 is a view showing various modified embodiments of the heat generating portion.

Referring to FIG. 16, a heating portion of the substrate support 1640 may be a heat generating coil, and one heating wire 1643 may be spirally wound. The entire heat ray 1643 may be surrounded by an insulating layer 1645.

Alternatively, the heat generating portion may include a plurality of heat wires 1643a and 1643b wound in a spiral manner. The plurality of hot wires 1643a and 1643b may be wound so as not to overlap each other. The plurality of heat lines 1643a and 1643b may be electrically insulated by the insulating layer 1645. [

17 is a view showing a configuration of a substrate support table using the heat generating portion of FIG.

Referring to FIG. 17, a heating unit power source 1768 may be connected to two heating lines 1643a and 1643b of the substrate support 1740, respectively. The heating power source 1768 can be connected to the two heating wires 1643a and 1643b through the filter circuits 1767a and 1767b, respectively. The power supplied from the heat generator power supply 1768 is supplied to the two heat lines 1643a and 1643b, and the heat of the heat is generated to control the temperature of the substrate.

Further, the two heating lines 1643a and 1643b may be connected to the voltage dividing circuits 1769a and 1769b to function as an antenna. The heat lines 1643a and 1643b may function as antennas for receiving RF signals. Can be received by heat lines 1743a and 1743b through the substrate mounted on substrate support 1740 and detected through voltage dividing circuits 1769a and 1769b and transferred to the process monitoring circuit.

18 is a view showing a substrate support of another preferred embodiment of the present invention.

Referring to FIG. 18, the substrate support 1840 may include an electrostatic electrode 1846 and a heating portion 1843. The electrostatic electrode 1846 may be connected via an electrostatic chuck power supply 1848 and a filter circuit 1847 so as to function as an electrostatic chuck. The heating portion 1843 may be connected to the heating portion power source 1868 through a filter circuit 1867 so as to function as a means for heating the substrate 1812. [

The electrostatic electrode 1846 and the heat generating portion 1843 may function as an antenna for receiving an RF signal. The electrostatic electrode 1846 and the heat generating portion 1843 may be connected to the voltage dividing circuits 1849 and 1869, respectively. The voltage dividing circuits 1849 and 1869 may be connected to the process monitoring circuit 1852 through the switching circuit 1870.

The control unit 1854 controls the switching circuit 1870 to be connected to the electrostatic electrode 1846 or the heating unit 1843 to transmit the received RF signal to the process monitoring circuit 1852. [ The control unit 1854 receives an RF signal by using one of the electrostatic electrode 1846 or the heating unit 1843 or receives an RF signal by using the electrostatic electrode 1846 and the heating unit 1843 .

19 is a diagram showing transmission and reception signals of an RF signal according to the thickness of a substrate.

Referring to FIG. 19, as described above, the RF signal transmitted to the process chamber through the electrostatic electrode or the heating unit may be received through the electrostatic electrode or the heating unit. At this time, the RF signal may be received differently depending on the thickness of the substrate. For example, when an RF signal is transmitted and received in a process of performing a deposition process on a substrate, the thickness of the substrate may become thicker as the film is deposited on the substrate as the process proceeds. Therefore, the thicker the substrate thickness, the more slowly the RF signal received through the substrate can be received.

20 is a graph showing changes in RF signals and capacitances transmitted and received during the atomic layer deposition process and the cleaning process.

Referring to FIG. 20, the RF signal received through the antenna during the atomic layer deposition process has a correlation with the thickness of the substrate. As the thickness of the substrate becomes thicker while carrying out the atomic layer deposition process, the intensity of the RF signal received through the substrate can gradually be received weakly.

Also, the thickness of the substrate and the capacitance to be measured have a correlation. The greater the thickness of the substrate, the greater the capacitance detected through the substrate.

In cleaning a process chamber using a remote plasma chamber, as the cleaning process progresses, the strength of the received RF signal may gradually be received, depending on the thickness.

When cleaning a process chamber using a remote plasma chamber, the capacitance detected depending on the thickness of the particles may be reduced.

21 is a view illustrating a process of monitoring a substrate support using an atomic layer deposition process facility according to a preferred embodiment of the present invention.

Referring to FIG. 21, in order to monitor a substrate support (hereinafter referred to as an electrostatic chuck) serving as an electrostatic chuck, a change amount of an electrical parameter of the electrostatic chuck can be measured through a process monitoring circuit (S121). The change amount of the electrical parameter of the measured electrostatic chuck is transmitted to the control unit, and the control unit can determine the operation state of the electrostatic chuck based on the change amount of the electrical parameter (S122). When the electrostatic chuck is to be electrically controlled, the control unit controls a component (for example, an electrostatic chuck power supply for supplying power to the electrostatic chuck) for driving the electrostatic chuck based on the measured amount of change in the electrical parameter (S123). After the electrostatic chuck is electrically controlled, the state of the electrostatic chuck can be displayed through the display unit (S124).

Thereafter, the controller may determine whether to continue the atomic layer deposition process using the controlled electrostatic chuck (S125). In step S122, if the interlock control for the electrostatic chuck is required, the controller may transmit the interlock control signal to the component for driving the electrostatic chuck in step S126. When the interlock control signal is received in step S126, the electrostatic chuck stops driving, and the control unit can inform the user of the interlocked state of the electrostatic chuck by displaying the status through an alarm or display unit.

22 is a view illustrating a process of cleaning using a cleaning process facility according to a preferred embodiment of the present invention.

Referring to FIG. 22, after performing the atomic layer deposition process in the process chamber, if it is determined that cleaning in the process chamber is necessary, a cleaning process can be performed. The control unit may supply the cleaning gas into the remote plasma chamber by controlling the mass flow meter (MFC) and the gas supply unit (S310). After supplying the cleaning gas, power may be supplied to the remote plasma chamber (S311). The remote plasma may then be discharged in the remote plasma chamber (S312). The discharged plasma can cause the decomposed radicals in the remote plasma chamber to exit the process chamber. The discharged radical may be subjected to a process of cleaning the process chamber by removing radicals in the process chamber (S313). In the course of cleaning the process chamber, process parameters can be measured through process monitoring circuitry that is correlated to the amount of cleaning change within the process chamber. At this time, the electric parameter may be received in the RF signal using the electrostatic electrode or the heating unit as described above (S314). The end point of the cleaning process can be detected (determined) using the measured electrical parameters (S315).

When the cleaning process is completed, power supply to the remote plasma chamber can be stopped (S316). The remote plasma in the remote plasma chamber is turned off (S317), and the cleaning process can be completed by controlling the mass flow meter (MFC) or the gas supply unit to shut off the supply of the cleaning gas (S318).

The foregoing detailed description should not be construed in any way as being restrictive and should be considered illustrative. The scope of the present invention should be determined by rational interpretation of the appended claims, and all changes within the scope of equivalents of the present invention are included in the scope of the present invention.

Claims (13)

A support for supporting the substrate;
An electrostatic electrode that is included in the supporting unit and receives electric power from the electrostatic chuck power supply unit and chucks and dechucks the substrate;
A heating unit included in the supporting unit to control a temperature of the substrate;
A process monitoring circuit for receiving an RF signal from at least one of the electrostatic electrode or the heating unit and measuring an electrical parameter included in the RF signal; And
And a controller for receiving electrical parameters from the process monitoring circuit and monitoring the degree of deposition of the substrate or the abnormality of the support during the atomic layer deposition process based on the electrical parameters, Substrate support.
The method according to claim 1,
Wherein the electrostatic chuck power supply unit includes:
And an atomic layer deposition process and a magnetic monitoring function in which the substrate is chucked and dechucked by the support unit in connection with the support unit.
The method according to claim 1,
Further comprising a voltage divider circuit provided between the electrostatic electrode and the process monitoring circuit.
The method according to claim 1,
Further comprising a voltage divider circuit provided between the heating unit and the process monitoring circuit.
The method according to claim 1,
A power supply unit for supplying power to the electrostatic electrode; And
Wherein the electrostatic electrode is switched to be selectively connected to the power supply or the process monitoring circuit.
The method according to claim 1,
Further comprising a filter circuit for preventing an AC power source from flowing into the electrostatic chuck power supply unit, and a substrate support having a self-monitoring function.
The method according to claim 1,
And a switching circuit for connecting at least one of the heating portion or the electrostatic electrode with the process monitoring circuit.
The method according to claim 1,
The heat-
An atomic layer deposition process comprising at least one hot wire and a substrate support having a magnetic monitoring function.
A substrate support according to any one of claims 1 to 8;
A process chamber in which the substrate support is disposed;
A plasma source for discharging the plasma into the process chamber; And
And a remote plasma chamber provided outside the process chamber for discharging the plasma,
An atomic layer deposition process facility that monitors the degree of deposition of a substrate supported on the substrate support during an atomic layer deposition process or whether the substrate support is abnormal.
10. The method of claim 9,
Wherein the plasma source comprises:
An upper electrode disposed above the process chamber;
A lower electrode facing the upper electrode; And
And a power supply unit connected to the upper electrode or the lower electrode to supply power,
An atomic layer deposition process facility for discharging capacitively coupled plasma into the process chamber.
10. The method of claim 9,
Wherein the plasma source comprises:
A dielectric window provided in the process chamber; And
And an antenna coil installed in the dielectric window to induce an electric field into the process chamber,
An atomic layer deposition process facility in which an inductively coupled plasma is discharged into the process chamber.
12. The method of claim 11,
Further comprising a ferrite core for concentrating the magnetic field induced in the antenna coil into the process chamber.
10. The method of claim 9,
Wherein the plasma source comprises:
A dielectric window provided in the process chamber;
An antenna coil installed in the dielectric window to induce an electric field into the process chamber; And
And an electrode unit provided in the process chamber,
An atomic layer deposition process facility in which plasma capacitively coupled with an inductively coupled plasma into the process chamber is discharged.

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