KR20190054370A - Apparatus for treating substrate - Google Patents

Abstract

Provided is a substrate processing apparatus, which controls a substrate rotation speed in a spin device in accordance with a warpage state of a substrate. The substrate processing apparatus includes: a sensing device sensing a warpage state of a substrate and generating sensing data; a spin device rotating the substrate and applying chemical liquid onto the substrate; and a controller receiving the sensing data from the sensing device to determine the warpage state of the substrate and controlling the substrate rotation speed in the spin device in accordance with the warpage state of the substrate.

Description

[0001] Apparatus for treating substrate [0002]

The present invention relates to a substrate processing apparatus.

Semiconductor devices are manufactured by repeatedly carrying out various unit processes such as a thin film deposition process, a photolithography process, an etching process, a cleaning process, and a polishing process. As the substrate undergoes various unit processes, warpage may occur. The substrate having such a bending phenomenon can exhibit process characteristics different from the process characteristics of the flat substrate even though the same process is performed under the same process conditions as the flat substrate.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate processing apparatus for controlling a substrate rotation speed in a spin apparatus in accordance with a bending state of the substrate.

Another object of the present invention is to provide a computer storage medium storing a program capable of controlling the rotational speed of a substrate in a spin apparatus in accordance with a bending state of the substrate.

The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a sensing device for sensing a warpage state of a substrate to generate sensing data; A spin apparatus for applying a chemical solution onto the substrate while rotating the substrate; And a controller for receiving the sensing data from the sensing device to determine a bending state of the substrate and controlling a rotation speed of the substrate in the spinning device according to a bending state of the substrate.

Here, the sensing device includes a hot plate, the heat plate is divided into a plurality of regions, and includes a plurality of temperature sensors for measuring the temperature of the respective regions, The temperature drop amount in the plurality of regions is sensed and the bending state of the substrate is determined on the basis of the temperature drop amount in the plurality of regions.

The plurality of regions may include a center region and an edge region, and a bending state of the substrate may be determined based on a difference between a first temperature drop amount of the center region and a second temperature drop amount of the edge region have.

Alternatively, the plurality of regions may include a center region and a plurality of edge regions, and based on the difference between the amount of temperature drop of the opposite edge region and the amount of temperature drop of the adjacent edge region, The bending state of the substrate can be judged.

Wherein the controller rotates the substrate at a first rotation speed after the chemical liquid is applied to the substrate by the spin device when the substrate is in a bent state and the bending state of the substrate is convex, The substrate may be rotated at a second rotational speed that is slower than the first rotational speed after the chemical liquid is applied to the substrate.

Alternatively, the controller may rotate the substrate at a first rotation speed after the chemical liquid is applied to the substrate by the spin device when the substrate has a warpage state of a concave shape and the substrate is warped by a first size, Wherein when the substrate is bent by a second size larger than the first size, after the substrate is applied to the substrate by the spin device, the substrate is rotated at a third rotation speed .

Alternatively, the controller may rotate the substrate at a second rotation speed after the chemical liquid is applied to the substrate by the spin device, when the substrate has a warping state of a convex shape and the substrate is warped by a third size, Wherein when the substrate is bent by a fourth size larger than the third size, the substrate is rotated at a fourth rotation speed which is slower than the second rotation speed after the chemical liquid is applied to the substrate by the spin device, .

According to another aspect of the present invention, there is provided a computer storage medium having a plurality of areas, wherein a bending state of the substrate is determined using a hot plate capable of measuring a temperature of each area, A computer program for controlling the number of revolutions of a support unit used in a process, wherein a determination of a warp state of the substrate is made based on a temperature drop amount of the plurality of areas when the substrate is loaded on the heat plate, Wherein the control unit controls the rotation of the support unit at a first rotation speed when the substrate is in a bent state and controls the rotation of the support unit at a first rotation speed when the substrate is in a bent state, Is rotated at a second rotation speed that is slower than the first rotation speed.

The details of other embodiments are included in the detailed description and drawings.

1 is a block diagram for explaining a substrate processing apparatus according to some embodiments of the present invention.
2 is an exemplary conceptual diagram of the sensing device shown in Fig.
3 is an exemplary plan view for explaining the heating plate shown in Fig.
4 is a view for explaining the temperature change of the substrate mounted on the heating plate.
5 is a view for explaining a temperature change of a heat plate on which a substrate is mounted.
Figs. 6 to 8 are views for explaining the bending state of the substrate. Fig.
9 is an exemplary conceptual diagram of the spin device shown in Fig.
10 is a diagram for explaining the relationship between the rotational speed and the centrifugal force.
11 is a view for explaining the relationship between the bending state of the substrate and the rotational speed.
12 is a diagram for explaining an exemplary operation of the spin device.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

It is to be understood that when an element or layer is referred to as being " on " or " on " of another element or layer, All included. On the other hand, a device being referred to as " directly on " or " directly above " indicates that no other device or layer is interposed in between.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term " below " can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

Although the first, second, etc. are used to describe various elements, components and / or sections, it is needless to say that these elements, components and / or sections are not limited by these terms. These terms are only used to distinguish one element, element or section from another element, element or section. Therefore, it goes without saying that the first element, the first element or the first section mentioned below may be the second element, the second element or the second section within the technical spirit of the present invention.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In this specification, the singular forms include plural forms unless otherwise specified in the text. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. A description thereof will be omitted.

1 is a block diagram for explaining a substrate processing apparatus according to some embodiments of the present invention.

Referring to FIG. 1, a substrate processing apparatus 1 according to some embodiments of the present invention includes a sensing device 10, a spin device 20, and a controller 30.

The sensing device 10 senses the warpage state of the substrate W. The sensed sensing data (SD) is provided to the controller (30).

The method of sensing the bending state can vary.

For example, the surface of the substrate W can be scanned while moving a laser displacement sensor or a distance measuring device over the substrate W.

Alternatively, a hot plate capable of measuring the temperature of each region can be used, which is divided into a plurality of regions. When the substrate W is mounted on the heat plate, the bending state of the substrate W can be determined by sensing the amount of temperature drop in a plurality of regions. A specific method using the heat plate will be described later with reference to Figs. 2 to 8. Fig.

The spin device 20 is provided with a substrate W through the sensing device 10. The spin device 20 applies a chemical solution onto the substrate W while rotating the provided substrate W. The spin device 20 may be a device that performs various processes such as a coater, cleaning, and the like. Any apparatus may be used as long as it is a process of applying a chemical liquid onto the substrate W while rotating the substrate W.

The controller 30 receives the sensing data SD from the sensing device 10 to determine the bending state of the substrate W and controls the substrate W in the spin device 20 according to the bending state of the substrate W. [ Can be controlled. The controller 30 provides the spin device 20 with a control signal RI for controlling the spin device 20.

Here, the warp state may mean a shape such as a concave type, a convex type, a flat type, and the like, but the present invention is not limited thereto. For example, the concave shape can be divided into various detailed shapes. For example, in the case of a cap in which all peripheral portions of the substrate W are bent upwardly from the central portion, a portion of the periphery of the substrate W is bent upward than the central portion, There may also be columnar shapes that do not exist.

The bending state is a concept including not only the bent shape of the substrate W but also the bending degree. For example, the concave substrate W may be divided into a one-step concave, a two-step concave, and a three-step concave depending on the degree of warping. The degree of warpage may be represented digitally (i.e., one stage, two stages, three stages, etc.) or analogously (i.e., 1, 2, 3,

For example, the controller 30 can rotate the substrate W at the first rotation speed after the chemical liquid is applied to the substrate W in the spin apparatus 20 when the bending state of the substrate W is concave have. When the bending state of the substrate W is convex, the substrate W may be rotated at a second rotation speed that is slower than the first rotation speed after the chemical liquid is applied to the substrate W by the spin device 20. A concrete rotational speed control method will be described later with reference to Figs. 9 to 12. Fig.

The controller 30 may include a computer storage medium storing a program for performing the above operation (that is, determining the bending state of the substrate W, and controlling the number of rotations of the substrate (or the support unit)).

In this manner, the chemical liquid can be uniformly applied onto the substrate W by controlling the rotation speed of the substrate W in accordance with the bending state of the substrate W. Therefore, it is possible to minimize the change in the process characteristics in accordance with the warp of the substrate W, thereby stabilizing the process.

1, the sensing device 10, the spin device 20, and the controller 30 are conceptually separated from each other, but the present invention is not limited thereto. For example, the controller 30 may be physically merged into the sensing device 10 or the spin device 20, and the sensing device 10, the spin device 20, the controller 30, May be merged into one.

The structure and operation of the sensing device 10 will be described below with reference to Figs. 2 to 8. Fig.

2 is an exemplary conceptual diagram of the sensing device shown in Fig. 3 is an exemplary plan view for explaining the heating plate shown in Fig.

Referring to Figures 2 and 3, the sensing device 10 includes a heat plate 15. A plurality of heaters 11 and a plurality of temperature sensors 13 may be installed in the heat plate 15. [

The heat plate 15 may be divided into a plurality of regions R1 to R5. The plurality of regions R1 to R5 shown in Fig. 3 are merely illustrative. For example, the plurality of regions R1 to R5 include a center region R1 and edge regions R2 to R5. In FIG. 3, the edge regions R2 to R5 are shown as a single layer, but are not limited thereto. For example, the edge region may be more than one layer. That is, the edge areas R2 to R5 may include a first layer around the center area R1, a second layer surrounding the first layer, and the like. The number of the plurality of regions R1 to R5 is not limited to five.

In addition, the heater 11 and the temperature sensors 131 to 135 may be formed in the plurality of regions R1 to R5, respectively. Therefore, the temperature of each of the regions R1 to R5 can be controlled by using the heater 11 corresponding to each of the regions R1 to R5. The temperatures of the regions R1 to R5 can be measured using the temperature sensors 131 to 135 corresponding to the regions R1 to R5. The temperature sensors 131 to 135 corresponding to the plurality of regions R1 to R5 may be provided.

4 is a view for explaining the temperature change of the substrate mounted on the heating plate. 5 is a view for explaining a temperature change of a heat plate on which a substrate is mounted. Figs. 6 to 8 are views for explaining the bending state of the substrate. Fig.

Referring to FIG. 4, when the substrate W is loaded on the heating plate 10, the substrate W gradually rises from the starting temperature T0 to the target temperature Tf. When the target temperature Tf is reached (see time t1), the substrate W maintains the target temperature Tf.

5, before the substrate W is loaded on the heat plate 15, the heat plate 15 maintains a constant process temperature Ts by the heater 11. [

When the substrate W is loaded on the heat plate 15, the temperature of the heat plate 15 is lowered. This is because the starting temperature T0 of the substrate is lower than the processing temperature Ts of the heating plate 15. The heater 11 operates so that the temperature of the heat plate 15 returns to the process temperature Ts. After a certain period of time, the temperature of the heat plate 15 is returned to the process temperature Ts (see time t2).

Here, the temperature drop amounts? Ta,? Tb,? Tc are changed in accordance with the bending state of the substrate W.

Specifically, the substrate W is placed on the hot plate 15, and a first temperature drop amount? Ta is generated when the substrate W is at the first distance from the hot plate 15. In this case, the temperature change with time of the heat plate 15 moves according to the graph a.

The substrate W is loaded on the heat plate 15 and a second temperature drop amount? Tb is generated when the substrate W is at a second distance from the heat plate 15 by a distance greater than the first distance. That is, when the distance between the substrate W and the heat plate 15 is large, the substrate W does not affect the heat plate 15. Therefore, the second temperature drop? Tb is smaller than the first temperature drop? do. In this case, the temperature change with time of the heat plate 15 moves according to the graph b.

The substrate W is loaded on the heating plate 15 and a third temperature drop amount? Tc is generated when the substrate W is at a third distance closer to the heating plate 15 than the first distance. That is, when the distance between the substrate W and the heat plate 15 is short, since the substrate W affects the heat plate 15, the third temperature drop amount? Tc is smaller than the first temperature drop amount? . In this case, the temperature change with time of the heat plate 15 moves according to the graph c.

Here, with reference to FIGS. 6 to 8, the temperature change of the heating plate 15 will be examined according to the bending state of the substrate W. FIG.

Referring to Fig. 6, it is assumed that a flat substrate WF is loaded on the heat plate 15. Fig. The distance between the center region R1 of the heating plate 15 and the substrate W, the distance between the edge region R2 and the substrate W, the edge region R4, and the distance between the substrate W Are all substantially the same.

Therefore, when the flat substrate WF is mounted on the heat plate 15, the temperature change with time in the center region R1, the edge region R2, and the edge region R4 is, for example, And moves along the graph a. Here, for convenience of explanation, it is assumed that the center area R1, the edge area R2, and the edge area R4 all have the same area. If the areas of the center area R1, the edge area R2, and the edge area R4 are not the same, the amount of temperature drop may be different from each other. For example, if the area of the center region R1 is wider than the area of the edge region R2, the amount of temperature drop in the center region R1 (even if it is a flat substrate WF) It may be smaller than the descending amount.

Referring to Fig. 7, it is assumed that the concave substrate WC1 is mounted on the heat plate 15. The distance between the center region R1 of the heating plate 15 and the substrate W is determined by the distance between the edge region R2 and the substrate W and the distance between the edge region R4 and the substrate W W).

Therefore, when the concave substrate WC1 is mounted on the heat plate 15, the temperature change with time in the center region R1 can be moved, for example, according to the graph c in Fig. On the other hand, the temperature change with time in the edge region R2 and the edge region R4 can be moved according to the graph b of Fig. 5, for example. The temperature drop amount? Tc in the center region R1 is larger than the temperature drop amount? Tb in the edge region R2 and the edge region R4.

If the concave substrate WC2 which is less bent than the concave substrate WC1 is loaded on the heat plate 15, the temperature change with time in the center region R1 can be changed, for example, . On the other hand, the temperature change with time in the edge region R2 and the edge region R4 can be moved, for example, according to the graph a in Fig.

Referring to Fig. 8, it is assumed that the convex substrate WV1 is mounted on the heat plate 15. Fig. The distance between the center region R1 of the heating plate 15 and the substrate W is equal to the distance between the edge region R2 and the substrate W and the distance between the edge region R4 and the substrate W ). ≪ / RTI >

Therefore, when the convex substrate WV1 is placed on the heat plate 15, the temperature change with time in the center region R1 can be moved, for example, according to the graph b of Fig. 5. On the other hand, the temperature change with time in the edge region R2 and the edge region R4 can be moved according to the graph c in Fig. 5, for example. The temperature drop amount? Tb in the center region R1 is smaller than the temperature drop amount? Tc in the edge region R2 and the edge region R4.

When a convex substrate WV2 that is less curved than the convex substrate WV1 is loaded on the heating plate 15, the temperature change with time in the center region R1 can move in accordance with, for example, the graph b in Fig. 5 . On the other hand, the temperature change with time in the edge region R2 and the edge region R4 can be moved, for example, according to the graph a in Fig.

In summary, when the substrate W is mounted on the heat plate 15, the amount of temperature drop in the center region R1 and the amount of temperature drop in the edge regions R2 to R5 depend on the bending state of the substrate W It is different. Therefore, the controller 30 can determine the bending state of the substrate W based on the amount of temperature drop in the plurality of regions R1 to R5.

In the case of the flat substrate WF, the difference between the temperature drop amount in the center region R1 and the temperature drop amount in the edge regions R2 to R5 is the smallest.

In the case of the concave substrate WC1 and the convex substrate WV1, the absolute value of the difference between the temperature drop amount in the center region R1 and the temperature drop amount in the edge regions R2 to R5 becomes greater It grows. For example, in the case of the recessed substrate WC1, subtracting the temperature drop amount in the edge regions R2 to R5 from the temperature drop amount in the center region R1 indicates a positive difference value. Conversely, in the case of the convex substrate WV1, subtracting the temperature drop amount in the edge regions R2 to R5 from the temperature drop amount in the center region R1 indicates a negative difference value.

The controller 30 compares the amount of temperature drop between the plurality of edge regions R2 to R5 to determine whether the concave substrate W and the convex substrate W are in the cap shape or the column shape have. For example, the cap shape means that all the edge regions R2 to R5 of the substrate W are bent upwardly from the center portion, and the columnar shape is a shape in which the edge region of the substrate W is higher than the center portion And the other edge region is not warped.

If the temperature drops in all the edge regions R2, R3, R4 and R5 are substantially similar, it means that all the edge regions R2, R3, R4 and R5 are bent upward / downward in a similar manner. Therefore, it can be seen that the concave substrate W / the convex substrate W is in a cap shape.

Alternatively, the amount of temperature drop in the opposite edge regions (R2, R4 or R3, R5) facing each other is similar, and if the temperature drop amount in the adjacent edge regions (R2, R3 or R2, R5) Type substrate W and the convex type substrate W are columnar. The amount of temperature drop in the edge regions R2 and R4 or R3 and R5 facing each other is similar and the amount of temperature drop in the adjacent edge regions R2 and R3 or R2 and R5 is small, W) / convex substrate W is in the form of a cap.

That is, the controller 30 calculates the difference between the difference between the temperature drop amounts of the opposing edge regions R2, R4 or R3, R5 and the temperature drop amounts of the adjacent edge regions R2, R3 or R2, R5 It is possible to determine the specific bending state of the substrate based on the value.

The structure and operation of the spin device 20 will be described below with reference to FIGS. 9 to 12. FIG.

9 is an exemplary conceptual diagram of the spin device shown in Fig. 10 is a diagram for explaining the relationship between the rotational speed and the centrifugal force. 11 is a view for explaining the relationship between the bending state of the substrate and the rotational speed.

9, the spin apparatus 20 includes a support unit 23 on which a substrate W can be loaded and rotated, and a chemical solution applying unit 23 for applying a chemical solution L on the support unit 23 21).

After the chemical solution applying unit 21 applies the chemical solution L onto the substrate W placed on the support unit 23, the support unit 23 can increase the rotation speed. 10, the rotational speed of the support unit 23 and the centrifugal force are proportional to each other. That is, as the rotational speed of the support unit 23 increases, the centrifugal force also increases.

Therefore, even if the chemical liquid L is injected to the central portion of the substrate W, if the centrifugal force becomes large as the rotation speed of the support unit 23 increases, the chemical liquid L is transferred to the peripheral portion of the substrate W Can be applied. The rate at which the chemical liquid L is transferred to the peripheral portion of the substrate W, the thickness of the chemical liquid L applied onto the substrate W, and the like may be changed according to the magnitude of the centrifugal force.

In the substrate processing apparatus 1 according to some embodiments of the present invention, the rotational speed of the substrate W is controlled in accordance with the determined bending state of the substrate W.

Specifically, referring to FIG. 11, it is assumed that when the bending state of the substrate WF is flat, when the controller 30 adjusts the rotation speed to RPM4, the chemical solution can be applied to a predetermined thickness within a predetermined time.

When the bending state of the substrates WCl and WC2 is concave, the controller 30 adjusts the rotation speed to RPM5 or RPM6 faster than RPM4. The center portions of the concave substrates WC1 and WC2 are located below the peripheral portion. Therefore, when the recessed substrates WC1 and WC2 are rotated at the same speed as the rotational speed RPM4 of the flat substrate WF, the thickness of the recessed substrate WC1 , WC2) may be thin. Therefore, by rotating the concave substrates WCl and WC2 more quickly, the centrifugal force can be further increased, and the chemical liquid can be coated on the concave substrates WCl and WC2 with a desired thickness.

Also, the rotation speed should be adjusted according to the degree of warping. That is, when the concave substrate WC1 is bent more than the concave substrate WC2, the rotation speed RPM6 of the concave substrate WC1 is faster than the rotation speed RPM5 of the concave substrate WC2 . By doing so, the chemical liquid can be applied on the concave substrates WC1 and WC2 to a desired thickness.

When the bending state of the substrates WV1 and WV2 is convex, the controller 30 adjusts the rotational speed to RPM2 or RPM3 which is slower than RPM4. The central portions of the convex type substrates WV1 and WV2 are above the peripheral portion. Therefore, when the convex type substrates WV1 and WV2 are rotated at the same speed as the rotational speed RPM4 of the flat substrate WF, the thickness of the convex type substrates WV1 and WV2 ) May be thin. Therefore, by rotating the substrate W more slowly, the centrifugal force is smaller, and the chemical liquid can be applied on the convex type substrates WV1 and WV2 with a desired thickness.

Also, the rotation speed should be adjusted according to the degree of warping. That is, when the convex type substrate WV1 is bent more than the convex type substrate WV2, the rotational speed RPM2 of the convex type substrate WV1 is made to be slower than the rotational speed RPM3 of the convex type substrate WV2. By doing so, the chemical liquid can be applied on the convex type substrates WV1 and WV2 to a desired thickness.

12 is a diagram for explaining an exemplary operation of the spin device.

12, the substrates WF, WC1, WC2, WF1 and WF2 are rotated at the same rotation speed RPM1 regardless of the bending state of the substrates WF, WC1, WC2, WF1 and WF2 before the application of the chemical liquid. .

After the chemical liquid is applied to the substrates WF, WC1, WC2, WF1 and WF2, the rotation speed varies depending on the bending state of the substrates WF, WC1, WC2, WF1 and WF2.

Specifically, after the chemical liquid L is applied to the flat substrate WF, if the warpage state of the substrate WF is flat, the substrate WF is rotated at a rotational speed of, for example, RPM4 faster than the pre-application rotational speed RPM1 .

When the substrate WC2 is warped and the substrate WC2 is warped by the first size, the substrate WC2 is moved to the first rotation speed RPM5 faster than the RPM4 after the chemical solution is applied to the substrate WC2 .

 When the substrate WC1 is warped and the substrate WC1 is bent by a second size larger than the first size (i.e., when the substrate WC1 is warped more than the substrate WC2) The substrate is rotated at the third rotation speed RPM6 which is faster than the first rotation speed RPM5.

 When the substrate WV2 is warped and the substrate WV2 is bent by the third size, the substrate WV2 is rotated at a second rotation speed RPM3 slower than the RPM4 after the chemical liquid is applied to the substrate WV2, .

 When the substrate WV1 is warped and the substrate WV1 is bent by a fourth dimension larger than the third size (i.e., when the substrate WV1 is warped more than the substrate WV2) After the chemical liquid is applied, the substrate WV1 is rotated at the fourth rotation speed RPM2, which is slower than the second rotation speed RPM3.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

10: sensing device 11: heater
13: Temperature sensor 15:
20: Spin device 30: Controller

Claims (8)

A sensing device for sensing a warpage state of the substrate to generate sensing data;
A spin apparatus for applying a chemical solution onto the substrate while rotating the substrate; And
And a controller for receiving the sensing data from the sensing device to determine a bending state of the substrate and controlling the rotation speed of the substrate in the spin device according to a bending state of the substrate. The method according to claim 1,
The sensing device includes a hot plate,
Wherein the heat plate is divided into a plurality of regions and includes a plurality of temperature sensors for measuring the temperature of each of the regions, and the plurality of temperature sensors are arranged in such a manner that when the substrate is loaded on the heat plate, Sensing the drop amount,
Wherein the bending state of the substrate is determined on the basis of a temperature drop amount in the plurality of regions. 3. The method of claim 2,
The plurality of regions including a center region and an edge region,
Wherein the bending state of the substrate is determined based on a difference between a first temperature drop amount of the center region and a second temperature drop amount of the edge region. 3. The method of claim 2,
Wherein the plurality of regions include a center region and a plurality of edge regions,
Wherein a bending state of the substrate is determined on the basis of a difference value between a temperature drop amount of an edge region facing each other and a difference value between temperature drop amounts of neighboring edge regions. 2. The apparatus of claim 1,
Wherein when the bending state of the substrate is a concave shape, the substrate is rotated at a first rotation speed after the chemical liquid is applied to the substrate by the spin device,
Wherein when the substrate is in a convex shape, the substrate is rotated at a second rotational speed that is slower than the first rotational speed after the chemical liquid is applied to the substrate by the spinning apparatus. 2. The apparatus of claim 1, wherein the controller
Rotating the substrate at a first rotation speed after the chemical liquid is applied to the substrate by the spin device when the substrate is warped and the substrate is bent by a first size,
Wherein when the bending state of the substrate is concave and the substrate is bent by a second size larger than the first size, after the chemical liquid is applied to the substrate by the spin device, And rotating the substrate at a rotational speed. 2. The apparatus of claim 1, wherein the controller
Rotating the substrate at a second rotation speed after the chemical liquid is applied to the substrate by the spin device when the substrate is warped and the substrate is bent by a third size,
Wherein when the bending state of the substrate is convex and the substrate is bent by a fourth size larger than the third size, after the chemical liquid is applied to the substrate by the spin device, the substrate is rotated by a fourth rotation Substrate processing apparatus. A computer program for storing a computer program for dividing a plurality of regions into a plurality of regions and determining a bending state of the substrate by using a hot plate capable of measuring a temperature of each region, as,
Wherein the determination of the warpage state of the substrate is performed based on a temperature drop amount of the plurality of regions when the substrate is loaded on the heat plate,
Wherein the control unit controls the rotation speed of the support unit so that the support unit is rotated at a first rotation speed when the substrate is in a concave shape and when the substrate is in a convex shape, And rotates at a second rotational speed that is slower than the rotational speed.

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