KR20190037931A - Led display apparatus and method for fabricating the same - Google Patents

Abstract

Disclosed is an LED display apparatus. The LED display apparatus comprises: first vertical LED chips, second vertical LED chips, and third vertical LED chips that form a plurality of pixel units; a conductive light transmitting plate electrically connected, in common, with upper electrodes of the first vertical LED chips, the second vertical LED chips, and the third vertical LED chips to form a common power output terminal; and a thin film board including a first conductive pattern thin film with patterns electrically connected with individual lower electrodes of the first vertical LED chips, a second conductive thin film with patterns electrically connected with individual lower electrodes of the second vertical LED chips, and a third conductive thin film with patterns electrically connected with individual lower electrodes of the third vertical LED chips to form a plurality of individual power input terminals. According to the present invention, it is possible to manufacture a compact LED display apparatus.

Description

TECHNICAL FIELD [0001] The present invention relates to an LED display device and a method of manufacturing the LED display device.

The present invention relates to an LED display device, and more particularly, to an LED display device in which a plurality of pixel units having a minute size are arrayed between a thin film substrate (TFB) and a conductive light transmitting plate, To an LED display device which can be individually driven.

In a typical full-color LED display device, each pixel consists of a red LED, a green LED, and a blue LED. In recent years, an LED display device has been proposed which constitutes each pixel with a red LED, a green LED, a blue LED and a white LED.

There are package-on module technology and chip-on-module technology for implementing RGB for manufacturing LED display device. The package-on-module technology is a method of modularizing a blue LED package, a green LED package, and a red LED package and applying the module to an LED display device, which is difficult to use in a small-sized display device and difficult to increase the resolution of the display device. The chip-on-module technology is a technology to construct a module by directly mounting a blue LED chip, a green LED chip, and a red LED chip on a substrate without putting it in a package. The technology can be implemented in a relatively small size compared to the package- And color reproducibility.

In order to realize high quality display such as UHD and FHD, a plurality of pixels including R, G, and B LED chips having very small size and individually driven are required. When a lateral type LED chip is used as the LED chips constituting the pixel, it is difficult to minimize the interval of the LED chips and the size of the display device due to the wire bonding. In addition, if there is wire bonding, the electrical connection may become unstable if the underfill process is performed. When a flip chip type LED chip is used, it is difficult to minimize the size and the interval between the electrode pads and the shape of the rectangle due to the electrode pads on the bottom surface.

Vertical LED chips having electrodes with different polarities on the upper and lower sides can be downsized and are attracting attention for high quality displays such as UHD and FHD. However, according to the related art, the vertical LED chip is still required to be wire-bonded to the upper electrode side, and due to the limited area of the PCB for the conventional LED display device, the vertical LED chips are bonded to the existing PCB, However, there are limitations in implementing high-quality displays such as UHD and FHD.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thin film board (TFB) for forming a separate input terminal for a plurality of LED chips constituting a plurality of pixels, a conductive light transmission And an LED display device including the plate and a method of manufacturing the same.

An LED display device according to an aspect of the present invention includes: first vertical LED chips, second vertical LED chips, and third vertical LED chips forming a plurality of pixel units; A conductive light transmitting plate electrically connected in common with the upper electrodes of the first vertical LED chips, the second vertical LED chips and the third vertical LED chips to form a common power output terminal; And a second conductive pattern thin film including patterns electrically connected to lower electrodes of the one vertical LED chips, and a second conductive pattern thin film including patterns electrically connected to lower electrodes of the second vertical LED chips, And a third conductive pattern thin film including patterns that are individually electrically connected to lower electrodes of the third vertical LED chips to form a plurality of discrete power input terminals.

According to an embodiment, the first conductive pattern thin film, the second conductive pattern thin film, and the third conductive pattern thin film are located at different heights.

According to an embodiment, the thin film substrate may include first vias connecting the lower electrodes of the first vertical LED chip and the patterns of the first conductive pattern thin film, lower vias of the second vertical LED chip, Second vias connecting the patterns of the second conductive pattern thin film and third vias connecting the patterns of the third conductive pattern thin film and the lower electrodes of the third vertical LED chip, The height of the second vias and the height of the third vias are set differently from each other.

According to one embodiment, the thin film substrate includes a base substrate, and the first conductive pattern thin film is formed to include patterns corresponding to lower electrodes of the first vertical LED chip, A first insulating layer is formed on the conductive pattern thin film and the second conductive pattern thin film is formed on the first insulating layer so as to include patterns corresponding to the lower electrodes of the second vertical LED chip, The third conductive pattern thin film is formed on the second insulating film so as to include patterns corresponding to the lower electrodes of the third vertical LED chip and a third insulating film is formed on the third conductive pattern thin film, .

According to one embodiment, the thin film substrate is connected to the conductive light transmitting plate, and the thin film substrate has a common electrode for forming the common power output terminal with respect to the first vertical LED chips, the second vertical LED chips and the third vertical LED chips. .

According to one embodiment, a common electrode connected to the conductive light transmitting plate is formed on a part of the third insulating film.

According to an embodiment, it is preferable that the first vertical LED chip is a blue LED chip, the second vertical LED chip is a green LED chip, and the third vertical LED chip is a red LED chip.

According to an embodiment, each of the first vertical LED chips, the second vertical LED chips, and the third vertical LED chips may include a first conductive type semiconductor layer sequentially formed from the lower electrode toward the upper electrode, an active layer, Semiconductor layer.

According to one embodiment, an insulating insulator is formed between the conductive light transmitting plate and the thin film substrate.

According to one embodiment, the conductive light transmitting plate includes ITO (Indium Tin Oxide).

According to another aspect of the present invention, there is provided a method for fabricating an LED display device, the method comprising the steps of: forming a first conductive pattern thin film having a plurality of conductive patterns, And a third conductive pattern thin film; Fabricating first vertical LED chips, second vertical LED chips, and third vertical LED chips each including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer between a lower electrode and an upper electrode; Mounting the first vertical LED chips on the thin film substrate such that the lower electrodes of the first vertical LED chips are electrically connected to the patterns of the first conductive pattern thin film individually; Mounting the second vertical LED chips on the thin film substrate such that lower electrodes of the second vertical LED chips are individually electrically connected to the patterns of the second conductive pattern film; Mounting the third vertical LED chips on the thin film substrate such that the lower electrodes of the third vertical LED chips are individually electrically connected to the patterns of the third conductive pattern thin film; And bonding the conductive light transmitting plate to the upper electrodes of the first vertical LED chips, the upper electrodes of the second vertical LED chips, and the upper electrodes of the third vertical LED chips and the common electrode.

According to an embodiment, the step of fabricating the thin film substrate may include forming the first conductive pattern thin film on a base substrate made of a glass material, forming a first insulating film on the first conductive pattern thin film, Forming the second conductive pattern thin film on the first insulating film, forming a second insulating film on the second conductive pattern thin film, forming the third conductive pattern thin film on the second insulating film, And forming a third insulating layer on the patterned thin film, wherein the thin film substrate includes a first via extending from a top surface of the thin film substrate to a first depth of the patterns of the first conductive pattern thin film, To a second depth of the second conductive pattern thin film from the top surface of the thin film substrate to the third conductive pattern thin film pattern, The extension is formed as a third via.

According to one embodiment, the mounting of the first vertical LED chips may include mounting the first vertical LED chips and the first vertical LED chips such that the lower electrodes of the first vertical LED chips are connected to the first vias, Bonding the first wafer including the substrate on which the first vertical LED chips are formed to the thin film substrate; and removing the substrate from the first vertical LED chips.

According to one embodiment, the mounting of the first vertical LED chips may include mounting the first vertical LED chips and the first vertical LED chips such that the lower electrodes of the first vertical LED chips are connected to the first vias, Bonding the first wafer including the substrate with the first vertical LED chip to the thin film substrate, and removing the substrate from the first vertical LED chips, wherein the step of mounting the second vertical LED chip comprises: In a state in which the first vertical LED chips are mounted on the thin film substrate, the second vertical LED chips and the second vertical LED chips are formed such that the lower electrodes of the second vertical LED chips are connected to the second vias Bonding a second wafer comprising a substrate onto the thin film substrate; and removing the second substrate from the second vertical LED chips Including a huge step.

According to an embodiment, the mounting of the third vertical LED chips may include mounting the first vertical LED chips and the second vertical LED chips on the thin film substrate, And mounting the third vertical LED chips on the thin film substrate so that the electrodes are connected to the third vias.

According to the present invention, a thin film substrate (TFB) for forming individual input terminals for a plurality of LED chips constituting a plurality of pixels and a conductive light transmitting plate for forming a common output terminal for a plurality of LED chips And the LED display device has an advantage that the vertical LED chips constituting each of the plurality of pixel units can be arranged at a smaller interval in a smaller area. Therefore, miniaturization of the LED display device is possible. Further, it is easy to fill the underfill material between the thin film substrate and the conductive light transmitting plate. In addition, since the wire bonding is omitted, it is possible to reduce the time required for the process due to the shortening of the time and to manufacture the device with a much smaller size. Particularly, the present invention is characterized in that first, second and third conductive pattern thin films are formed on a thin film substrate and the conductive pattern thin films may have a conductive pattern corresponding to each vertical LED chip, And the individual driving of the vertical LED chips of the pixel units is possible.

1 is a cross-sectional view illustrating an LED display device according to an embodiment of the present invention,
2 is a partially enlarged view of an LED display device according to an embodiment of the present invention,
3 to 9 are views for explaining a method of manufacturing an LED display device according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

1, an LED display device 1000 according to an embodiment of the present invention includes a thin film substrate 100 formed in a rectangular or square shape, and a thin film substrate 100 having substantially the same shape and area as the thin film substrate 100 A plurality of pixel units arranged between the thin film substrate 100 and the conductive light transmitting plate 500 and arranged in a matrix array, the conductive light transmitting plate 500 being spaced apart from the upper portion of the thin film substrate 100, (2). Each of the plurality of pixel units 2 includes a first vertical LED chip 200, a second vertical LED chip 300, and a third vertical LED chip 400.

The thin film substrate 100 includes the first vertical LED chips 200, the second vertical LED chips 300 and the third vertical LED chips 400 provided in the plurality of pixel units 2 Lt; RTI ID = 0.0 > a < / RTI > The conductive light transmitting plate 500 may be disposed on the thin film substrate 100 at a predetermined distance from the thin film substrate 100, Are provided to form one common output terminal for the vertical LED chips 200, the second vertical LED chips 300, and the third vertical LED chips 400.

The first vertical LED chip 300 and the third vertical LED chip 400 sandwich the first vertical LED chip 200, the third vertical LED chip 300 and the third vertical LED chip 400 between the thin film substrate 100 and the light transmitting plate 500. do. The first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 may have a structure for exposing all semiconductor layers of opposite polarity on the upper or lower surface, Unlike a lateral type or flip chip type LED chip, which requires a stepped structure to limit the area of the upper surface or the lower surface, only one electrode is required for each of the upper surface and the lower surface, , And can be integrated in an area corresponding to the existing chip scale.

As shown in FIG. 2, the first vertical LED chip 200 includes a lower electrode 210 and an upper electrode 250, which are gallium nitride semiconductor chips emitting blue light. The first vertical LED chip 200 includes a first conductive semiconductor layer 210 formed between the lower electrode 210 and the upper electrode 250 in order from the lower electrode 210 toward the upper electrode 250, A first conductive semiconductor layer 220, an active layer 230, and a second conductive semiconductor layer 240.

The second vertical LED chip 300 includes a lower electrode 310 and a lower electrode 350, which are gallium nitride semiconductor chips emitting green light. The second vertical LED chip 300 is formed between the lower electrode 310 and the upper electrode 350 in order from the lower electrode 310 toward the upper electrode 350, An active layer 330, and a second conductive semiconductor layer 340.

The third vertical LED chip 400 is a gallium arsenide type semiconductor chip emitting red light and includes a lower electrode 410 and an upper electrode 410. The third vertical LED chip 400 is formed between the lower electrode 410 and the upper electrode 450 in order from the lower electrode 410 toward the upper electrode 450, A first conductive semiconductor layer 420, an active layer 430, and a second conductive semiconductor layer 440.

The upper electrodes 250, 350 and 450 may be transparent electrodes such as ITO, and the lower electrodes 210, 310 and 410 may be metal electrodes. The upper electrodes 250, 350, 450 and / or the lower electrodes 210, 310, 410 may be omitted. In this case, the semiconductor layer or the ohmic contact layer may be formed on the upper and / / Or lower.

In this embodiment, the lower electrodes 210, 310, and 410 of the first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400, respectively, The first vertical LED chip 200, the second vertical LED chip 300, and the third vertical LED chip 400 are connected to the first and second semiconductor layers 220, 320, and 420, respectively, The upper electrodes 250, 350, and 450 of the second conductivity type semiconductor layer 240, 340, and 440 have a polarity of the second conductivity type. The first conductivity type may be p-type or n-type, and the second conductivity type may be n-type or p-type having different polarity from the first conductivity type.

The thin film substrate 100 includes a base substrate 101 made of an insulating material, particularly a glass material, a first conductive pattern thin film 110 formed on the base substrate 101, A second conductive pattern thin film 130 formed on the first insulating film 120 and electrically insulated from the first conductive pattern thin film 110, A second insulating layer 140 formed on the second conductive pattern layer 130 and a third conductive pattern layer 140 formed on the second insulating layer 140 and electrically insulated from the second conductive pattern layer 130 And a third insulating layer 160 formed on the third conductive pattern layer 150. The thin film substrate 100 is electrically connected to the conductive light transmitting plate 500 to electrically connect all the vertical LED chips 200, 300, and 400 provided in the plurality of pixel units 2 And a common electrode 170 forming a power output terminal.

Each of the first conductive pattern thin film 110, the second conductive pattern thin film 130 and the third conductive pattern thin film 150 includes an insulating base substrate 101, a first insulating film 120, 140 may be patterned and formed by a process such as etching, for example. Each of the first conductive pattern thin film 110, the second conductive pattern thin film 130 and the third conductive pattern thin film 150 includes a plurality of conductive patterns, And 400, respectively.

In addition, the thin film substrate 100 may be formed by stacking the lower electrodes 210 of the first vertical LED chip 200 among the plurality of LED chips 200, 300, and 400 included in the plurality of pixel units 2, And a second vertical LED chip (300, 400) among the plurality of LED chips (200, 300, 400) included in the plurality of pixel units (2) A second via 182 connecting the lower electrodes 310 of the plurality of pixel units 300 to patterns included in the second conductive pattern thin film 130 and a plurality of LED chips 200, And third vias 183 connecting the lower electrodes 410 of the third vertical LED chip 400 to the patterns included in the third conductive pattern thin film 150 among the first conductive pattern films 300 and 400.

Although the first conductive pattern thin film 110, the second conductive pattern thin film 130, and the third conductive pattern thin film 150 are each formed as a single layer without separation, The second conductive pattern thin film 130 and the third conductive pattern thin film 150 are connected to the lower electrodes of the first, second or third vertical LED chips 200, 300 and 400, respectively, And a plurality of conductive patterns which are separated from each other.

The first vias 181 extend at a first depth h1 at a position connected to the lower electrodes 210 of the first vertical LED chips 200, Patterns and the second vias 182 extend all at a second depth h2 in a position connected to the lower electrodes 310 of the second vertical LED chips 300, And the third vias 183 are connected to the patterns of the patterned thin film 130 such that they are extended to the third depth h3 at positions connected to the lower electrodes 410 of the third vertical LED chips 400 And is connected to the patterns of the third conductive pattern thin film 150.

In addition, according to the present embodiment, the thin film substrate 100 is provided with the common electrode 170, which is electrically connected to the first vertical LED chips 200, the second vertical LED chip 300 And the conductive light transmitting plate 500 connected to the upper electrodes 250, 350, and 450 of the third vertical LED chips 400 in common. And forms a common output terminal for the first vertical LED chips 200, the second vertical LED chips 300, and the third vertical LED chip 400.

Accordingly, the lower electrodes 210, 310, and 410 of the first vertical LED chips 200, the second vertical LED chips 300, and the third vertical LED chips 400 of all the pixel units 2 are connected to the first Conductive patterns of the conductive patterned thin film 110, conductive patterns of the second conductive patterned film 130 and conductive patterns of the third conductive patterned film 150 to form a plurality of individual input stages And the first vertical LED chips 200 are connected to one conductive light transmitting plate 500 through the upper electrodes 250, 350 and 450 of the second vertical LED chips 300 and the third vertical LED chips 400, The first vertical LED chips 200 of all the pixel units 2 are connected to the common electrode 170 provided on the thin film substrate 100 through the second vertical LED chip 300 and third vertical LED chips 400 can be individually controllable. The light emitted from the pixel unit 2 can be changed into various colors by individually controlling the first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400, Accordingly, it is possible to realize a full color display.

The distance between the first vertical LED chip 200 and the second vertical LED chip 300 and the spacing between the first vertical LED chip 200 and the second vertical LED chip 300 may be adjusted so as to increase the color uniformity of the light emitted from the pixel unit 2, The distance between the LED chip 300 and the third vertical LED chip 400 is preferably the same.

The first vertical LED chip 200, the second vertical LED chip 300 and the third vertical LED chip 400 may be connected between the thin film substrate 100 and the conductive light transmitting plate 500, An electrically insulating underfill may be formed so as to be filled.

Now, a manufacturing method of the LED display manufacturing apparatus will be described

First, a step of fabricating the thin film substrate 100 as shown in FIG. 3 is performed. In order to manufacture the thin film substrate 100, the thin film substrate 100 is formed by forming a first conductive pattern thin film 110 on a base substrate 101 made of an insulating material, in particular, a glass material, A first insulating layer 120 is formed on the thin film 110 and a second conductive pattern layer 130 is formed on the first insulating layer 120. The second conductive pattern layer 130 is formed on the second conductive pattern layer 130, A second insulating layer 140 is formed on the second conductive layer 140 and a third conductive pattern layer 150 is formed on the second insulating layer 140. A third insulating layer 160 is formed on the third conductive pattern layer 150 . The thin film substrate 100 is further provided with a first via 181 extending from the top surface of the thin film substrate 100 to the conductive patterns of the first conductive pattern thin film 110 at a first depth h1, A second via 182 extending from the upper surface of the thin film substrate 100 to the conductive patterns of the second conductive thin film 130 at a second depth h2, A third via 182 extending to a third depth h3 up to the conductive patterns of the second conductive layer 150 is formed.

Next, a plurality of first vertical LED chips 200, a plurality of second vertical LED chips 300, and a plurality of third vertical LED chips 400 are mounted on the thin film substrate 100. In this embodiment, the first vertical LED chip 200 and the second vertical LED chip 300 are made of the gallium nitride-based semiconductor layer grown on the sapphire substrates 201 and 301, , It is required to remove the sapphire substrate during the mounting process. On the other hand, it is noted that the third vertical LED chip 400 includes a gallium arsenide-based semiconductor layer on an arbitrary growth substrate, which may be removed during the mounting process, but is not essential when the conductive growth substrate is used .

4A, a sapphire substrate 201 and a plurality of first vertical LED chips 200 formed on the sapphire substrate 201 are included in the initial stage of the mounting of the first vertical LED chip The first wafer W1 is prepared. A lower electrode 210 is formed on each of the plurality of first vertical LED chips 200. The first vertical LED chip 200 includes a gallium nitride based first conductivity type semiconductor layer grown on a sapphire substrate, an active layer, and a second conductive type semiconductor layer.

4 (b), the sapphire substrate 301 and the plurality of second vertical LED chips 300 formed on the sapphire substrate 301 are connected to the first vertical LED chip 300 and the second vertical LED chip 300, The second wafer W2 is prepared. A lower electrode 310 is formed on each of the plurality of second vertical LED chips 300. The second vertical LED chip 300 includes an n-type semiconductor layer of a gallium nitride series grown on a sapphire substrate, an active layer and a p-type semiconductor layer.

5, the first wafers W1 are connected to the first vias 181 of the thin film substrate 100 so that the lower electrodes 210 of the first vertical LED chips 200 are connected to the first vias 181 of the thin film substrate 100, Bonding to the thin film substrate 100 and removing the sapphire substrate 201 from the plurality of first vertical LED chips 200 are sequentially performed. As a result, the first vertical LED chips 200 remaining after the sapphire substrate 201 is removed are mounted on the thin film substrate 100.

6, the lower electrodes 310 of the second vertical LED chips 300 are connected to the second vias 182 of the thin film substrate 100, and the first wafers W1 are connected to the second vias 182 of the thin film substrate 100, Bonding to the thin film substrate 100 and removing the sapphire substrate 301 from the plurality of second vertical LED chips 300 are performed in order. Thereby, the sapphire substrate 301 is removed and a plurality of remaining second vertical LED chips 300 are mounted on the thin film substrate 100.

7, the lower electrodes 410 of the third vertical LED chip 400 may be connected to the third vias 183, and a plurality of third vertical LED chips may be connected to the thin film substrate 100, (400). The mounting of the third vertical LED chip 400 may be performed by mounting the wafer in a state similar to the mounting method of the first and second vertical LED chips and then separating the substrate. Alternatively, As shown in Fig.

8, a step of bonding one common electrode 170, which is vertically elongated, to a specific electrode pattern on the upper surface of the thin film substrate 100 is performed. The common electrode 170 is made of a metal having good conductivity, such as Cu, Au, or Ag, or an alloy containing the same.

9, the conductive light transmitting plate 500 is connected to the first vertical LED chips 200, the second vertical LED chips 300, the third vertical LED chips 400, A step of lifting and bonding the electrodes 250, 350, and 450 to the upper surface of the common electrode 170 is performed. The conductive light transmitting plate 500 is formed of a conductive and light-transmitting material such as ITO (Indium Tin Oxide). Insulating insulating film may be filled between the conductive light transmitting plate 500 and the thin film substrate 100.

By the above-described steps, a plurality of pixel units including a first vertical LED chip, a second vertical LED chip, and a third vertical LED chip are arranged in a matrix array between the conductive light transmitting plate and the large-area thin film substrate A panel-type LED display device can be made.

100 .................................... Thin film substrate
200 .................................. First Vertical LED chip
300 ....................................... Second Vertical LED chip
400 ....................................... Third Vertical LED chip
500 ...................................... light transmission plate
2 ......................................... pixel unit

Claims (15)

First vertical LED chips, third vertical LED chips and third vertical LED chips forming a plurality of pixel units;
A conductive light transmitting plate electrically connected in common with the upper electrodes of the first vertical LED chips, the second vertical LED chips and the third vertical LED chips to form a common power output terminal; And
A first conductive pattern thin film including patterns electrically connected to lower electrodes of the one vertical LED chips, a second conductive pattern thin film including patterns electrically connected to lower electrodes of the second vertical LED chips, And a third conductive pattern thin film including patterns electrically connected to lower electrodes of the third vertical LED chips, the thin film substrate forming a plurality of individual power input terminals. The LED display device of claim 1, wherein the first conductive pattern thin film, the second conductive pattern thin film, and the third conductive pattern thin film are located at different heights. The thin film transistor of claim 1, wherein the thin film substrate comprises first vias connecting the lower electrodes of the first vertical LED chip and the patterns of the first conductive pattern thin film, and second vias connecting the lower electrodes of the second vertical LED chip, 2 conductive pattern thin film; third vias connecting the lower electrodes of the third vertical LED chip and the patterns of the third conductive pattern thin film, wherein the height of the first vias And the height of the second vias and the height of the third vias are different from each other. The method as claimed in claim 1, wherein the thin film substrate includes a base substrate, the first conductive pattern thin film is formed to include patterns corresponding to lower electrodes of the first vertical LED chip, The second conductive pattern thin film is formed on the first insulating film so as to include patterns corresponding to the lower electrodes of the second vertical LED chip on the pattern thin film, A third insulating film is formed on the second insulating film, the third conductive pattern thin film is formed to include patterns corresponding to lower electrodes of the third vertical LED chip, and a third insulating film is formed on the third conductive pattern thin film And an LED display device. The thin film substrate as claimed in claim 1, wherein the thin film substrate is connected to the conductive light transmitting plate and has a common electrode for forming the common power output terminal with respect to the first vertical LED chips, the second vertical LED chips and the third vertical LED chips Further comprising: a light source for emitting light; [6] The LED display device of claim 4, wherein a common electrode connected to the conductive light transmitting plate is formed in a partial region of the third insulating film. The LED display device according to claim 1, wherein the first vertical LED chip is a blue LED chip, the second vertical LED chip is a green LED chip, and the third vertical LED chip is a red LED chip. The semiconductor light emitting device of claim 1, wherein each of the first vertical LED chips, the second vertical LED chips, and the third vertical LED chips comprises: a first conductivity type semiconductor layer formed in order from the lower electrode toward the upper electrode; Wherein the light emitting layer includes a light emitting layer. The LED display device according to claim 1, wherein an insulating insulator is formed between the conductive light transmitting plate and the thin film substrate. The LED display device according to claim 1, wherein the conductive light transmitting plate comprises ITO (Indium Tin Oxide). Fabricating a thin film substrate comprising a first conductive pattern thin film, a second conductive pattern thin film, and a third conductive pattern thin film, each of which is composed of a plurality of conductive patterns and having different heights;
Fabricating first vertical LED chips, second vertical LED chips, and third vertical LED chips each including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer between a lower electrode and an upper electrode;
Mounting the first vertical LED chips on the thin film substrate such that the lower electrodes of the first vertical LED chips are electrically connected to the patterns of the first conductive pattern thin film individually;
Mounting the second vertical LED chips on the thin film substrate such that lower electrodes of the second vertical LED chips are individually electrically connected to the patterns of the second conductive pattern film;
Mounting the third vertical LED chips on the thin film substrate such that the lower electrodes of the third vertical LED chips are individually electrically connected to the patterns of the third conductive pattern thin film;
And bonding the conductive light transmitting plate to the upper electrodes of the first vertical LED chips, the upper electrodes of the second vertical LED chips and the upper electrodes of the third vertical LED chips and the common electrode Wherein the LED display device is a display device. [14] The method of claim 11, wherein the step of fabricating the thin film substrate comprises: forming the first conductive pattern thin film on a base substrate made of a glass material; forming a first insulating film on the first conductive pattern thin film; Forming a second conductive pattern thin film on the first insulating film, forming a second insulating film on the second conductive pattern thin film, forming the third conductive pattern thin film on the second insulating film, Wherein the thin film substrate includes a first via extending from an upper surface of the thin film substrate to a first depth of the first conductive pattern thin film to a first depth and a second insulating film extending from an upper surface of the thin film substrate A second via extending to the patterns of the second conductive pattern thin film to a second depth; and a third via extending from the upper surface of the thin film substrate to the patterns of the third conductive pattern thin film, The first LED display device manufacturing method according to claim 3 vias extending therefrom. The method of claim 12, wherein the step of mounting the first vertical LED chips further comprises the step of mounting the first vertical LED chips and the first vertical LED chips such that the lower electrodes of the first vertical LED chips are connected to the first vias Bonding the first wafer including the formed substrate onto the thin film substrate; and removing the substrate from the first vertical LED chips. The method of claim 12, wherein the step of mounting the first vertical LED chips further comprises the step of mounting the first vertical LED chips and the first vertical LED chips such that the lower electrodes of the first vertical LED chips are connected to the first vias Bonding the first wafer including the formed substrate to the thin film substrate; and removing the substrate from the first vertical LED chips, wherein the step of mounting the second vertical LED chip comprises: The second vertical LED chips and the second vertical LED chips are connected to the second vias so that the lower electrodes of the second vertical LED chips are connected to the second vias in a state in which the first vertical LED chips and the second vertical LED chips are mounted on the thin substrate, Bonding the second wafer to the thin film substrate; bonding the second vertical LED chips to the substrate And removing the light emitting diode (LED). The method as claimed in claim 14, wherein the step of mounting the third vertical LED chips further comprises the step of mounting the first vertical LED chips and the second vertical LED chips on the thin film substrate, Wherein the third vertical LED chips are mounted on the thin film substrate so that the third vertical LED chips are connected to the third vias.

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