KR20190035102A - Tape for semiconductor - Google Patents

Abstract

The present relates to a tape for a semiconductor. The tape introduces an aromatic compound having a specific structure into an adhesive layer, has a wider range of elastic modulus when dicing or grinding semiconductor wafers by controlling the content of the aromatic compound to an appropriate level, and minimizes damage to a chip because of easy shock absorption during a grinding process or a dicing process since the elastic modulus can be maintained at an appropriate level. In addition, chemical resistance and heat resistance can be increased by including the aromatic compound, thereby being usefully used in the production of semiconductor devices.

Description

TAPE FOR SEMICONDUCTOR

The embodiment relates to a tape for semiconductor.

As semiconductor wafers become thinner at a thickness of 50 to 100 탆 or 50 탆 or less due to the trend of thinning, semiconductor wafers are processed by grinding (grinding) wafers and then dicing after grinding ; DAG), and then turning to a dicing before grinding (DBG) method.

The DBG method is a method in which a wafer on which a bump and a circuit are formed is formed into a groove on a street (back surface) on a wafer by a half cutting dicer, a tape having adhesive force is attached to the groove- Grinding and separating into chips. At this time, the tape to be used is called a back grinding tape for DBG semiconductor, which is different from a conventional semiconductor tape in which wires are used instead of bumps.

Semiconductors also tend to become smaller and thinner depending on the requirements of thin and light electronic devices, and the thickness value (polishing amount) of the wafers to be polished in the grinding process tends to increase in conjunction with these trends. On the other hand, the signal processing amount of semiconductors is increased and a high processing speed is required, so that the circuit structure is concentrated and becomes complicated. To meet this demand, semiconductor tapes for DBG can be used to protect semiconductor chips (such as bump structures) that have become more complex and can be thinned more thinly. Even after polishing, individual chips can be arrayed uniformly And maintains the state of the state.

The semiconductor tape for DBG used in semiconductor processing must be resistant to contamination and the adhesive component should not remain on the wafer. Accordingly, in the related art, it is known that a lot number (LOT NO.) Is indicated for each tape grade of semiconductor for DBG, that there is no damage such as scratches on the outer surface of the tape and that there is no defect and / or contamination such as a cut surface, use.

A high adhesive strength is required in a wafer grinding process in a typical semiconductor process, and a low adhesive strength is required in chip separation. Therefore, in the prior art, a tape having an ultraviolet ray-curable pressure-sensitive adhesive (layer) which is cured by ultraviolet rays is often used. The tape having the ultraviolet ray hardenable pressure sensitive adhesive layer has a high adhesive strength before being irradiated with ultraviolet rays, and is strongly bonded to the wafer and is excellent in wafer retention, and after being irradiated with ultraviolet rays, it hardens to lower the adhesive force, 9-298173). However, a tape requiring such adhesive property has a disadvantage in that after the peeling, the adhesive component is not completely removed from the chip and remains, thereby causing defective chip.

Further, in recent years, there is a tendency that the semiconductor wafer is thinned, and it is necessary to protect the surface on which the bumps and the circuit are formed even when the wafer is diced or after half-cutting and grinding. In particular, thinned wafers can easily break even with small intensities, so the tape must also serve to buffer shocks during dicing or grinding.

Japanese Patent Application Laid-Open No. 9-298173

Therefore, by introducing an aromatic compound having a specific structure into the adhesive layer, the embodiment has a wide range of adjustment of the modulus of elasticity, which facilitates chip protection and shock mitigation during the dicing or grinding process, and is also excellent in properties such as chemical resistance and heat resistance To provide a tape for use.

An embodiment provides a tape for a semiconductor comprising a base layer and an adhesive layer formed on one surface of the base layer, wherein the adhesive layer comprises an aromatic compound having a repeating unit represented by the following formula 1:

[Chemical Formula 1]

In this formula,

R ₁ to R ₃ are each independently a C _1-10 alkylene or C _6-10 arylene, hydrogen, hydroxy, and C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _{6- 10} aryloxy, nitro, amine, and halogen.

An embodiment provides a method of manufacturing a semiconductor device, comprising the steps of: providing a tape for semiconductor comprising a base layer and an adhesive layer formed on one surface of the base layer; Bonding the semiconductor tape to one surface of the semiconductor wafer; And polishing the other surface of the semiconductor wafer, wherein the adhesive layer comprises an aromatic compound having a repeating unit represented by the formula (1).

The semiconductor tape of the embodiment can have a wider range of elastic modulus when dicing or grinding a semiconductor wafer by introducing an aromatic compound having a specific structure into the adhesive layer and adjusting the content of the aromatic compound to an appropriate level, So that damage to the chip can be minimized since the shock absorption is easy during the grinding process or the dicing process. Further, since the chemical resistance and heat resistance can be improved by including the aromatic compound, it can be usefully used in the production of semiconductor devices.

1 is a schematic view showing a method of manufacturing a semiconductor device according to an embodiment.
Fig. 2 is a photograph of the thickness of a chip after the wafer grinding process is performed in Test Example 3 using the semiconductor tape of Example 2. Fig.

An embodiment provides a tape for a semiconductor comprising a base layer and an adhesive layer formed on one surface of the base layer, wherein the adhesive layer comprises an aromatic compound having a repeating unit represented by the following formula 1:

[Chemical Formula 1]

In this formula,

R ₁ to R ₃ are each independently a C _1-10 alkylene or C _6-10 arylene, hydrogen, hydroxy, and C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _{6- 10} aryloxy, nitro, amine, and halogen.

Specifically, each of R ₁ and R ₃ is independently C _1-10 alkylene, and is hydrogen, hydroxy, C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _6-10 aryloxy , Nitro, amine and halogen, and R ₂ is C _6-10 arylene, which may be substituted with at least one substituent selected from the group consisting of hydrogen, hydroxy, C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _{6- 10} aryloxy, and it may have one or more substituents selected from the group consisting of nitro, halogen and amines.

,

,

,

또는

이고, R₄, R₄', R₅, R₆, R₆', 및 R₇은 각각 독립적으로, 수소, 히드록시, C_1-5 알킬, C_1-5 알콕시, C_6-10 아릴, C_6-10 아릴옥시, 니트로, 아민 또는 할로겐일 수 있다. More specifically, R ₁ and R ₃ are each independently C _1-6 alkylene and are selected from the group consisting of hydrogen, hydroxy, C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, and C _6-10 aryl Oxy, and R < ₂ > may have one or more substituents selected from the group consisting of

,

,

,

or

_{And, R 4, R 4 ',} R 5, R 6, R 6', and R ₇ are each independently, hydrogen, hydroxy, C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _6-10 aryloxy, nitro, amine or halogen.

,

,

,

또는

일 수 있다. More specifically, R ₁ and R ₃ are each independently C _1-4 alkylene, may have one or more substituents selected from the group consisting of hydroxy and C _6-10 aryloxy, and R ₂ is

,

,

,

or

Lt; / RTI >

The aromatic compound can be prepared, for example, by reacting binaphthol with an aliphatic compound or an aromatic ring compound and 1,3,5-trioxane in the presence of a catalyst in an organic solvent (novolak reaction).

The aromatic compound may be contained in an amount of 1 to 40 wt%, 5 to 40 wt%, 5 to 30 wt%, and 5 to 20 wt% based on the total weight of the adhesive layer. When the content is within the above range, the uniformity of the resin constituting the adhesive layer can be maintained at an appropriate level, and the elasticity and heat resistance are also excellent.

The aromatic compound may have a weight average molecular weight of 1,000 to 20,000 g / mol, or 3,000 to 8,000 g / mol. The pressure-sensitive adhesive layer should have a weight average molecular weight higher than a certain level as the weight average molecular weight of the aromatic compound is increased as the weight average molecular weight of the aromatic compound is increased. However, if the aromatic compound has a larger weight average molecular weight than a certain level, the adhesive component may remain on the wafer after peeling off the tape. Thus, the adhesive strength can be maintained while improving the modulus of elasticity of the tape within the above range.

The thickness of the adhesive layer may be 10 to 50 占 퐉, or 10 to 30 占 퐉, and the adhesive residue may be prevented from remaining on the wafer within the above range.

The adhesive layer may further include an acrylic resin, an epoxy resin, a urethane resin, an ester resin, a vinyl acetate resin, and the like, and may specifically include an acrylic resin, an ester resin, and the like.

The base layer of the semiconductor tape may be a resin commonly used in the art. For example, the base layer may be formed of a resin such as a polyethylene terephthalate resin, a polyethylene resin, a polypropylene resin, a polyurethane resin, a polyvinyl chloride resin, And an amide resin, and may specifically include a polyethylene terephthalate resin.

The thickness of the base layer may be 30 to 150 탆, 50 to 120 탆, or 75 to 100 탆. When the thickness is within the above range, the appropriate modulus of elasticity of the whole semiconductor tape can be ensured. It is possible to improve the property.

Furthermore, the semiconductor tape may further include a buffer layer between the base layer and the adhesive layer. The buffer layer is not limited as long as it is commonly used in the art, and may be made of, for example, a resin containing an acrylate compound or a resin composition. Specifically, the buffer layer may include, for example, butyl acrylate, methyl methacrylate, hydroxyethyl acrylate and the like as the acrylate compound.

The thickness of the buffer layer may be 10 to 300 탆, 50 to 300 탆, 50 to 200 탆, or 80 to 150 탆. Within this range, damage to the chip can be minimized.

The tape for semiconductor according to the embodiment can be manufactured by the following method.

Specifically, a substrate layer (or substrate film) comprising a polyolefin resin such as polyethylene resin or polypropylene resin, polyethylene terephthalate resin, polyurethane resin, polyvinyl chloride resin, acrylic resin, amide resin or a mixture thereof is prepared And coating a resin composition for forming an adhesive layer (and a buffer layer) on one surface of the substrate layer and drying the resin composition. The types of the resin used for the base layer, the adhesive layer and the buffer layer are as described above.

The coating method can be used without limitation as long as it is well known in the art. For example, a comma coating, a spin-on coating, a slit coating, a bar coating or a spray coating may be used. And then passed through a drying chamber that is long connected.

The semiconductor tape thus manufactured may have a thickness of 50 to 700 占 퐉, 50 to 500 占 퐉, 100 to 500 占 퐉, or 100 to 300 占 퐉.

As described above, the semiconductor tape of the embodiment can have a wider range of elastic modulus when dicing or grinding a semiconductor wafer by introducing an aromatic compound having a specific structure into the adhesive layer and adjusting the content of the aromatic compound to an appropriate level , The modulus of elasticity can be maintained at an appropriate level, so that damage to the chip can be minimized since the shock absorption is easy during the grinding process or the dicing process. Further, since the chemical resistance and heat resistance can be improved by including the aromatic compound, it can be usefully used in semiconductor device production, such as grinding and dicing of semiconductor wafers.

Specifically, the adhesive tape for a semiconductor according to the embodiment may have an adhesive strength of 50% or more, 52% or more, 50 to 80%, 50 to 70% or 52 to 70% at 50 ° C as compared with the adhesive strength at 25 ° C See Test Example 1).

Further, in the ratio _{(tan δ 50 ℃ / tan δ} 25 ℃) 0.3 of loss coefficient (tan δ _{50 ℃)} at 50 ℃ loss factor (tan δ _{25 ℃)} compared to at 25 ℃ of the tape for a semiconductor according to example , Less than 0.25, 0.1 to 0.25, 0.1 to 0.23, or 0.15 to 0.21 (see Test Example 2).

Furthermore, the semiconductor tape according to the embodiment has a minimum chip damage rate when the residual thickness of the semiconductor wafer is 150 μm or less, 130 μm or less, or 150 to 80 μm in the back grinding process after being attached to one surface of the semiconductor wafer For example, the chip damage rate may be 3% or less, 2.5% or less, 2% or less, or 1% or less (see Test Example 3).

Further, after attaching the semiconductor tape according to the embodiment to one surface of a half-diced semiconductor wafer, it is preferable that the thickness of the semiconductor tape is 30 占 퐉 or more, 30 to 60 占 퐉 The chip damage ratio can be reduced to 2% or less, 1.5% or less, 1% or less, 0.01 to 2%, 0.01 to 1.5% or less, Or from 0.01 to 1% (see Test Example 3). At this time, the cutting start point of the chip means a half-cutting dicing point of the wafer, and the polishing depth end point means a point at which polishing is finished in polishing from the other surface of the wafer in the thickness direction.

Furthermore, the deviation of the remaining thickness after the semiconductor tape according to the embodiment is attached to one surface of the semiconductor wafer and the other surface of the wafer to which the semiconductor tape is attached is grasped, specifically, the thickness of the remaining wafer after grinding a plurality of wafers The difference between the maximum value and the minimum value may be 4 탆 or less, 3.5 탆 or less, 0.5 to 4 탆, 0.5 to 3.5 탆, 1 to 4 탆 or 1 to 3.5 탆 (see Test Example 3).

The embodiment can provide the semiconductor device including the above-described semiconductor tape and the manufacturing method thereof.

Specifically, the embodiment provides a tape for semiconductor comprising a base layer and an adhesive layer formed on one surface of the base layer; Bonding the semiconductor tape to one surface of the semiconductor wafer; And grinding (polishing) the other surface of the wafer, wherein the adhesive layer comprises an aromatic compound having a repeating unit represented by the formula (1) . At this time, as described above, the semiconductor tape may further include a buffer layer between the base layer and the adhesive layer.

Referring to FIG. 1, the embodiment performs a step of forming grooves between half-cutting dies on a street of a wafer. Generally, full cutting is performed in dicing, but in this manufacturing method, half-cutting is performed to chips formed on the wafer. At this time, the point where the half-cut dicing is performed is referred to as a cutting start point of the chip.

Next, a semiconductor tape as described above is attached to one surface of the grooved wafer. Then, a step of back grinding the other surface of the wafer and grinding is carried out until the chip is separated. When the grinding proceeds and reaches the half-cut groove, the wafer can be separated into individual chips.

Then, in order to remove the tape from the separated wafer and obtain a chip, the separated wafer is transferred in-line to the DBG mounter for alignment, then mounted on the frame, and then the tape is peeled off do.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are intended to illustrate the present invention, but the scope of the present invention is not limited thereto.

Manufacturing example  1: Preparation of aromatic compounds

[Formula 1-1]

A 500 ml, three-necked round flask equipped with a thermometer, condenser and dropping funnel was immersed in an oil bath at 100 ° C, stirred and heated on a magnet-hot plate, and the cooling water temperature of the condenser was fixed at 10 ° C.

To the flask, 71.6 g of 0.26 mol of 1,1'-bi-2-naphthol (1,1'-Bi-2-Naphthol), 8.3 g of 0.075 mol of hydroquinone and 0.45 mol of 1,3,5- And 40.5 g of 1,3,5-trioxane were added thereto, and 128 g of cyclohexanone was dissolved therein as a solvent. Then, 7.1 g of 38 mmol of para-toluenesulfonic acid monohydrate as a catalyst was added and the reaction was carried out with stirring. At this time, the temperature of the reactor was maintained at 100 占 폚.

During the reaction, a sample was taken from the reaction mixture and the weight average molecular weight of the sample was measured. When the desired weight average molecular weight was reached, the reaction time was determined as the completion time, and the reaction was gradually cooled at room temperature to terminate the reaction.

800 g of an 80:20 weight ratio n-hexane: ethanol mixed solution was prepared, and then the reaction product obtained above was added dropwise with stirring. At this time, the supernatant was removed and only the aggregated polymer was separated from the bottom of the flask. Then, the polymer was dried in a vacuum oven at 80 DEG C for 24 hours to remove residual solvent and impurities to obtain an aromatic compound containing the repeating unit of the above formula (1-1).

The obtained compound was measured by gel permeation chromatography (GPC). As a result, the compound had a weight average molecular weight of 4,300 g / mol and a degree of dispersion of 1.9.

Manufacturing example  2: Preparation of aromatic compounds

[Formula 1-2]

A 500 ml, three-necked round flask equipped with a thermometer, condenser and dropping funnel was immersed in a 120 ° C oil bath, stirred and heated on a magnet-hot plate, and the cooling water temperature of the condenser was fixed at 10 ° C.

43 g of 1,1'-non-2-naphthol, 14.1 g of 0.15 mol of phenol and 35.1 g of 0.39 mol of 1,3,5-trioxane were introduced into the flask, and 222 g of cyclohexanone And dissolved. Then, 2.85 g of 15 mmol of para-toluenesulfonic acid was added as a catalyst, and the reaction was carried out with stirring. At this time, the temperature of the reactor was maintained at 120 占 폚.

An aromatic compound containing a repeating unit represented by the above formula 1-2 was obtained in the same manner as in Preparation Example 1, except that 600 g of a hexane: ethanol mixed solution of 80:20 by weight was used.

The obtained compound was measured by gel permeation chromatography. As a result, the compound had a weight average molecular weight of 5,500 g / mol and a degree of dispersion of 1.8.

Manufacturing example  3: Preparation of aromatic compounds

[Formula 1-3]

A 500 ml, three-necked round flask equipped with a thermometer, condenser and dropping funnel was immersed in a 130 ° C oil bath, stirred and heated on a magnet-hot plate, and the cooling water temperature of the condenser was fixed at 10 ° C.

Into the flask, 71.6 g of 1,1'-non-2-naphthol, 0.125 mol of 1-naphthol and 18.0 g of 0.45 mol of 1,3,5-trioxane were introduced into the flask And 137 g of cyclohexanone as a solvent were added and dissolved. Then, 7.1 g of 38 mmol of para-toluenesulfonic acid as a catalyst was added and the reaction was carried out with stirring. At this time, the temperature of the reactor was maintained at 130 캜.

Then, an aromatic compound containing the repeating unit of the above formula 1-3 was obtained in the same manner as in Preparation Example 1.

The obtained compound was measured by gel permeation chromatography. As a result, the compound had a weight average molecular weight of 7,400 g / mol and a dispersion degree of 2.1.

Manufacturing example  4: Manufacture of conventional pressure-sensitive adhesive resin

130 g of bifunctional urethane acrylate (trade name UX3301, weight average molecular weight 8,000 mg / mol, Nippon Kayaku) containing ester diol group as the main resin, 70 g of acryloylmorpholine (trade name ACMO, Gojin) And 7 g of 1-hydroxycyclohexyl phenyl ketone (trade name Irgacure 184, Ciba Specialty Chemicals) were mixed to prepare a liquid resin.

Example  1: Manufacture of tape for semiconductor

10 parts by weight of the aromatic compound (Compound 1-1) prepared in Preparation Example 1 and 90 parts by weight of the conventional pressure-sensitive adhesive resin prepared in Preparation Example 4 were mixed with a mixer, and a phenolic tackifier (Arakawa chemical industries Ltd) Were mixed in an amount of 10 parts by weight or less based on 100 parts by weight of the total resin composition to prepare a pressure-sensitive adhesive resin composition.

Then, the pressure-sensitive adhesive resin composition was coated on a polyethylene terephthalate (PET) film having a thickness of 75 μm several times to have a thickness of 30 μm by a comma coating method to produce a semiconductor tape.

Example  2 to 4 and Comparative Example  One

Except that the aromatic compound prepared in Production Examples 2 and 3 and / or the conventional pressure-sensitive adhesive resin prepared in Production Example 4 were used as shown in the following Table 1, .

Test Example  1: Adhesion evaluation

In order to evaluate the adhesive strength of the adhesive layer containing the aromatic compound represented by the formula (1), the semiconductor tapes prepared in Examples 1 to 4 and Comparative Example 1 were attached to a Si wafer and allowed to stand at room temperature (25 ° C) for 30 minutes Lt; / RTI > Then, after leaving for 10 minutes at 25 ° C and 50 ° C using a tensile tester equipped with a heating chamber, the adhesive strength was measured and the ratios thereof were determined.

At this time, the tape was adjusted to have an adhesive force of 600 gf / 25 mm at 180 ° peel test according to KS standard under the condition of room temperature (25 ° C). This is to compare the adhesive strength at room temperature and at high temperature by fixing the adhesive force at room temperature.

division Configuration Adhesion (gf / 25mm) ratio(%)
(50 ° C adhesion
/ 25 ℃ adhesion) Manufacturing Example No.
/ Weight portion 25 ℃ 50 ℃ Example 1 1/10 4/90 600 330 55 Example 2 2/10 4/90 600 360 60 Example 3 3/10 4/90 600 390 65 Example 4 1/20 4/80 600 310 52 Comparative Example 1 - 4/100 600 250 42

Referring to Table 1, it can be seen that the tapes prepared in Examples 1 to 4 are superior in adhesive strength at 50 ° C / adhesive strength at 25 ° C, as compared with Comparative Example 1. Even if they have the same adhesion at room temperature, they can have different adhesion at high temperatures, which is closely related to the chemical structure and molecular motion depending on temperature. Specifically, it can be expected that the tape of the embodiment contains the aromatic compound represented by the above formula (1), so that the molecular motion at the high temperature is more restricted and the adhesive force is bridged between the compositions.

Test Example  2: Evaluation of elastic force - Measurement of loss coefficient

In order to examine the elasticity of the adhesive layer containing the aromatic compound represented by the formula 1, the semiconductor tapes of Examples 1 to 4 and Comparative Example 1 were prepared by adhering to the wafer in the same manner as in Test Example 1. Then, the loss coefficient (tan delta) at 25 DEG C and 50 DEG C was measured using a rheometer (tape in a hole method), and the ratios thereof were determined.

Loss factor (tan δ) Loss factor ratio
(tan δ _{50 ° C} / tan δ _{25 ° C} ) 25 ℃ 50 ℃ Example 1 0.37 0.07 0.189 Example 2 0.34 0.06 0.176 Example 3 0.32 0.05 0.156 Example 4 0.38 0.08 0.210 Comparative Example 1 0.40 0.10 0.250

As can be seen from Table 2, the tapes prepared in Examples 1 to 4 have a smaller loss coefficient at high temperature than those of Comparative Example 1. From this, the change in elastic modulus at high temperature is small, .

Test Example  3: Evaluation of wafer damage

Experiments were carried out in the following manner to confirm whether or not the wafer was damaged by the semiconductor tape manufactured in the examples.

300 chips having a depth of 180 μm and a size of 7 mm × 7 mm (width X length) were formed on an 8-inch wafer (thickness 730 μm), and the semiconductor tapes of Examples 1 to 4 and Comparative Example 1 were laminated on a laminator Dynatech, Model DT-ECS2030SL). Then, the back surface of the wafer was ground (ground) to a thickness of 130 mu m using a back grinder (DISCO Co., model name DGP8760), and the wafer was observed using an optical microscope to determine whether chips were damaged (and / And damage rate of chip. The results are shown in Table 3 below.

In addition, chips of the grinding wafers were collected in five points in a cross shape, and the thickness after grinding was measured. The average value and the difference between the maximum value and the minimum value were obtained. The results are shown in Table 4 and FIG. 2 (chip thickness photograph when the semiconductor tape of Example 2 is used).

Damaged or not
(And / or the number of damaged chips) Chip Damage Ratio (%) Example 1 2 0.7 Example 2 One 0.3 Example 3 - 0 Example 4 3 1.0 Comparative Example 1 7 2.3

Thickness average after grinding (탆) Maximum-minimum difference (탆) Example 1 133.8 2.8 Example 2 135.3 2.1 Example 3 134.5 1.0 Example 4 134.3 3.2 Comparative Example 1 133.2 5.2

Referring to Table 3, it can be seen that the semiconductor tapes prepared in Examples 1 to 4 had a small number or fewer damaged chips and a chip damage ratio of 1% or less as compared with Comparative Example 1.

Referring to Table 4, the semiconductor tapes produced in Examples 1 to 4 had a uniform thickness after grinding, and a smaller difference between the maximum thickness and the minimum thickness than in the case of using the tape of Comparative Example 1. [ Further, referring to FIG. 2, it can be confirmed that the thickness of the chip is uniform when the semiconductor tape of Example 2 is used.

Claims (18)

A base layer; And
And an adhesive layer formed on one surface of the substrate layer,
Wherein the pressure-sensitive adhesive layer comprises an aromatic compound having a repeating unit represented by the following Formula 1:
[Chemical Formula 1]

In this formula,
R ₁ to R ₃ are each independently a C _1-10 alkylene or C _6-10 arylene, hydrogen, hydroxy, and C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _{6- 10} aryloxy, nitro, amine, and halogen. The method according to claim 1,
Wherein R ₁ and R ₃ are each independently C _1-10 alkylene, hydrogen, hydroxy, C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _{6- 10} aryloxy, nitro, An amine and a halogen;
R ₂ is C _6-10 arylene and is selected from the group consisting of hydrogen, hydroxy, C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _6-10 aryloxy, nitro, And having at least one substituent selected. The method according to claim 1,
Wherein R ₁ and R ₃ are each independently C _1-6 alkylene, consisting of hydrogen, hydroxy, C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl and C _{6- 10} aryloxy Lt; / RTI > may have one or more substituents selected from the group consisting of &
Wherein R < _{2 &}

,

,

,

or

_{And, R 4, R 4 ',} R 5, R 6, R 6', and R ₇ are each independently, hydrogen, hydroxy, C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _6-10 aryloxy, nitro, amine or halogen. The method according to claim 1,
Wherein R ₁ and R ₃ are each independently C _1-4 alkylene and may have one or more substituents selected from the group consisting of hydroxy and C _6-10 aryloxy,
Wherein R < _{2 &}

,

,

,

or

Insulated, semiconductor tapes. The method according to claim 1,
Wherein the aromatic compound is contained in an amount of 5 to 40% by weight based on the total weight of the adhesive layer. The method according to claim 1,
Wherein the aromatic compound has a weight average molecular weight of 1,000 to 20,000 g / mol. The method according to claim 1,
Wherein the adhesive layer has a thickness of 10 to 50 占 퐉. The method according to claim 1,
Wherein the base layer comprises at least one resin selected from the group consisting of a polyethylene terephthalate resin, a polyethylene resin, a polypropylene resin, a polyurethane resin, a polyvinyl chloride resin, an acrylic resin and an amide resin. The method according to claim 1,
Wherein the base layer has a thickness of 30 to 150 占 퐉. The method according to claim 1,
Wherein the semiconductor tape further comprises a buffer layer between the base layer and the adhesive layer. The method according to claim 1,
Wherein the adhesive strength of the semiconductor tape at 50 DEG C to the adhesive strength at 25 DEG C is 50% or more. The method according to claim 1,
The loss factor at 25 ℃ a semiconductor tape (tan δ _{25 ℃)} ratio _{(tan δ 50 ℃ / tan δ} 25 ℃) of 0.25 is less than the tape for a semiconductor of the loss factor (tan δ _{50 ℃)} in preparation 50 ℃ . The method according to claim 1,
Wherein the semiconductor tape brings about a chip damage ratio of 1% or less when the residual thickness of the semiconductor wafer is 80 to 150 탆 after backing after attaching the semiconductor tape to one surface of the semiconductor wafer. The method according to claim 1,
The semiconductor tape was attached to one surface of a semiconductor wafer half-diced and then polished so as to have a thickness of 30 to 60 mu m in the direction from the cutting start point to the polishing depth end point of the semiconductor tape Gt; 1% < / RTI > The method according to claim 1,
Wherein a deviation of the remaining thickness after grinding when the semiconductor tape is attached to one surface of the wafer and the other surface of the wafer to which the semiconductor tape is attached is 4 mu m or less. Providing a semiconductor tape comprising a base layer and an adhesive layer formed on one surface of the base layer;
Bonding the semiconductor tape to one surface of the semiconductor wafer; And
And polishing the other surface of the semiconductor wafer,
Wherein the pressure-sensitive adhesive layer comprises an aromatic compound having a repeating unit represented by the following formula (1):
[Chemical Formula 1]

In this formula,
R ₁ to R ₃ are each independently a C _1-10 alkylene or C _6-10 arylene, hydrogen, hydroxy, and C _1-5 alkyl, C _1-5 alkoxy, C _6-10 aryl, C _{6- 10} aryloxy, nitro, amine, and halogen. 17. The method of claim 16,
Wherein the semiconductor tape further comprises a buffer layer between the base layer and the adhesive layer. 17. The method of claim 16,
Wherein one surface of the semiconductor wafer is formed with a plurality of grooves,
Wherein polishing is performed until reaching the groove at the other surface polishing of the semiconductor wafer.

Images