KR20190022958A - Organic light-emitting display apparatus and flat display including the same - Google Patents

Abstract

Disclosed are an organic light-emitting display device and a flat display device including the same. The organic light-emitting display device includes: a first pixel electrode, a second pixel electrode, and a third pixel electrode disposed in a first light emitting area, a second light emitting area, and a third light emitting area, respectively; counter electrodes formed on the opposite sides to the first pixel electrode, the second pixel electrode, and the third pixel electrode; and an intermediate layer interposed between the first to third pixel electrodes and the counter electrodes, and including a light emitting layer. The light emitting layer includes: a first light emitting layer disposed corresponding to the first light emitting area to emit first color light; a second light emitting layer disposed corresponding to the entire portion of the first light emitting area, the second light emitting area, and the third light emitting area to emit second color light; and a third light emitting layer disposed corresponding to the third light emitting area to emit third color light. Each of the maximum light emission wavelength of the first color light and the maximum light emission wavelength of the second color light is longer than the maximum light emission wavelength of the third color light, and the first color light and the second color light are emitted by n^th ordered resonance. The third color light is emitted by (n+1)^th ordered resonance. In this case, n is a natural number equal to or greater than 1.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting display device and a flat panel display device including the organic light emitting display device.

An organic light emitting diode (OLED) display, and a flat panel display including the OLED display.

The organic light emitting diode display includes an organic light emitting diode including an anode, a cathode, and an organic light emitting layer formed between the anode and the cathode, and an exciton generated by combining holes injected from the anode and electrons injected from the cathode in the organic light emitting layer Emitting display device that generates light while falling from an excited state to a ground state.

Since the organic light emitting display device, which is a self-emission type display device, does not require a separate light source, it can be driven at a low voltage and can be configured as a lightweight and thin type. Since the viewing angle, contrast, And applications ranging from personal portable devices such as cellular phones to televisions (TVs).

It is an object of the present invention to provide an organic light emitting device having a structure in which a defect rate is lowered, a production cost is lowered, and a production amount per hour can be increased. However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a liquid crystal display comprising: a first pixel electrode, a second pixel electrode, and a third pixel electrode arranged in the first light emitting region, the second light emitting region, and the third light emitting region; A counter electrode facing the first pixel electrode, the second pixel electrode, and the third pixel electrode; And an intermediate layer interposed between the first pixel electrode, the second pixel electrode, the third pixel electrode, and the counter electrode, the intermediate layer including a light emitting layer; / RTI > The light emitting layer may include a first light emitting layer disposed corresponding to the first light emitting region and emitting a first color light, A second light emitting layer disposed corresponding to the entire first light emitting region, the second light emitting region, and the third light emitting region, the second light emitting layer emitting a second color light; And a third light emitting layer disposed corresponding to the third region and emitting a third color light; Wherein the maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light are longer than the maximum emission wavelength of the third color light and the first color light and the second color light are emitted as nth order resonance ; The third color light is emitted as (n + 1) -th order resonance; Here, n is an integer of 1 or more.

In one embodiment, n may be selected from 1 and 2.

In one embodiment, the counter electrode includes a first counter electrode region corresponding to the first light emitting region, a second counter electrode region corresponding to the second light emitting region, and a third counter electrode region corresponding to the third light emitting region, / RTI > Wherein a first distance (L ₁ ) between a plane of the first counter electrode region in the direction of the first pixel electrode and a plane of the first pixel electrode in the direction of the first counter electrode region is a n-th order resonance distance ; And a second distance (L ₂ ) between a plane of the second counter electrode region in the direction of the second pixel electrode and a plane of the second pixel electrode in the direction of the second counter electrode region is a n-th order resonance distance ; And a third distance (L ₃ ) between a surface of the third counter electrode region in the direction of the third pixel electrode and a surface of the third pixel electrode in the direction of the third counter electrode region corresponds to (n + 1 ) Resonance distance.

In one embodiment, n is 1; L < ₁ > is from about 100 nm to about 120 nm; L ₂ is from about 80 nm to about 100 nm; The L ₃ may be from about 175 nm to about 195 nm.

In one embodiment, n is 2; L < ₁ > is from about 265 nm to about 285 nm; L < ₂ > is from about 225 nm to about 245 nm; The L ₃ may be from about 290 nm to about 310 nm.

In one embodiment, the first color light is red light, the second color light is green light, and the third color light is blue light.

In one embodiment, the first pixel electrode, the second pixel electrode, and the third pixel electrode may be reflective or transflective, and the counter electrode may be transmissive.

In one embodiment, the first pixel electrode, the second pixel electrode, and the third pixel electrode may be of a transmissive type, and the counter electrode may be of a reflective type or a semi-transmissive type.

In one embodiment, the second light emitting layer includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region; The first region being interposed between the first light emitting layer and the first pixel electrode; And the third region may be interposed between the third light emitting layer and the third pixel electrode.

In one embodiment, the second light emitting layer includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region; The first region being interposed between the first light emitting layer and the counter electrode; The third region may be interposed between the third light emitting layer and the counter electrode.

In one embodiment, the second light emitting layer includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region; The first region being interposed between the first light emitting layer and the first pixel electrode; The third region may be interposed between the third light emitting layer and the counter electrode.

In one embodiment, the second light emitting layer includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region; The first region being interposed between the first light emitting layer and the counter electrode; The third region may be interposed between the third light emitting layer and the first pixel electrode.

In one embodiment, the intermediate layer may further include a hole transporting region interposed between the first pixel electrode, the second pixel electrode, and the third pixel electrode and the light emitting layer.

In one embodiment, the intermediate layer may further include an electron transporting region interposed between the light emitting layer and the counter electrode.

In one embodiment, the intermediate layer may further include a first resonance control layer interposed between the first pixel electrode and the first light emitting layer.

In one embodiment, the intermediate layer may further include a third resonance control layer interposed between the third pixel electrode and the third light emitting layer.

In one embodiment, the second light emitting region is adjacent to the first light emitting region in the horizontal direction; The third light emitting region may be adjacent to the second light emitting region in the horizontal direction.

In one embodiment, the second light emitting region is adjacent to the first light emitting region in the horizontal direction; The third light emitting region may be adjacent to the first light emitting region in the vertical direction.

In one embodiment, the second light emitting region is adjacent to the first light emitting region in a first direction inclined in the horizontal direction; The third light emitting region may be adjacent to the first light emitting region in the horizontal direction.

According to another aspect of the present invention, there is provided a liquid crystal display comprising: a first pixel electrode, a second pixel electrode, and a third pixel electrode, which are spaced apart from each other in a first light emitting region, a second light emitting region and a third light emitting region;

A counter electrode facing the first pixel electrode, the second pixel electrode, and the third pixel electrode; And

An intermediate layer interposed between the first pixel electrode, the second pixel electrode, the third pixel electrode and the counter electrode, the intermediate layer including a light emitting layer; / RTI >

The light-

A first light emitting layer disposed corresponding to the first light emitting region and emitting a first color light;

A second light emitting layer disposed corresponding to the entire first light emitting region, the second light emitting region, and the third light emitting region, the second light emitting layer emitting a second color light; And

And a third light emitting layer disposed corresponding to the third region and emitting a third color light,

The maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light are longer than the maximum emission wavelength of the third color light,

i) the first color light and the second color light are emitted in a first resonance, and the third color light is emitted in a second resonance; and ii) the first color light and the second color light are emitted as a second resonance, and the third color light is emitted as a third resonance.

In another embodiment, a thin film transistor including a source electrode, a drain electrode, and an active layer; And the above-described organic light emitting display device; And the first pixel electrode, the second pixel electrode, and the third pixel electrode of the OLED display device are electrically connected to one of the source electrode and the drain electrode.

According to one embodiment of the present invention as described above, an organic light emitting device having a structure in which a defect rate is reduced, a production cost is reduced, and a production amount per hour is increased can be realized. Of course, the scope of the present invention is not limited by these effects.

1A to 1D are sectional views of an organic light emitting diode display according to an embodiment of the present invention, respectively.
2A to 2C are plan views of an OLED display according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods of achieving them will be apparent with reference to the embodiments described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments described below, but may be implemented in various forms.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding components throughout the drawings, and a duplicate description thereof will be omitted .

In the following embodiments, the terms first, second, and the like are used for the purpose of distinguishing one element from another element, not the limitative meaning.

In the following examples, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise.

In the following embodiments, terms such as inclusive or possessive are intended to mean that a feature, or element, described in the specification is present, and does not preclude the possibility that one or more other features or elements may be added.

In the following embodiments, when various components such as layers, films, regions, plates, and the like are referred to as being " on " other components, . Also, for convenience of explanation, the components may be exaggerated or reduced in size. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings.

1A to 1D are sectional views of an organic light emitting diode display according to an embodiment of the present invention, respectively. 1A to 1D illustrate cross-sectional views corresponding to I-I 'of FIG. 2A, which will be described later, respectively.

1A, the structure of an organic light emitting diode display 1 according to an embodiment will be described in detail.

The OLED display 1 includes a first pixel electrode 111, a second pixel electrode 112, and a third pixel electrode 113 disposed in the first light emitting region, the second light emitting region, and the third light emitting region, .

The first pixel electrode 111, the second pixel electrode 112, and the third pixel electrode 113 may be formed as transmissive, transflective, or reflective electrodes, respectively.

When the first pixel electrode 111, the second pixel electrode 112 and the third pixel electrode 113 are of a transmissive type, the anode 121 is made of tin oxide (SnO ₂ ), indium tin oxide (ITO) oxide, indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂ O ₃ ), indium gallium oxide (IGO), and aluminum zinc oxide And a transparent conductive layer of at least one selected from the group consisting of zinc oxide (AZO). The first pixel electrode 111, the second pixel electrode 112 and the third pixel electrode 113 may be formed of silver (Ag), magnesium (Mg (Al), platinum (Pt), palladium (Pd), gold (Au), indium (In), nickel (Ni), neodymium (Nd), iridium (Ir), chromium ), Calcium (Ca), ytterbium (Yb), and any combination thereof.

When the first pixel electrode 111, the second pixel electrode 112 and the third pixel electrode 113 are of a reflective type, the first pixel electrode 111, the second pixel electrode 112, and the third pixel electrode 113 ) Is a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, In, Nd, Ir, Cr, Li, Ca, Yb and any combination thereof; Conductive layer.

The first pixel electrode 111, the second pixel electrode 112, and the third pixel electrode 113 may be formed of various materials, and the structure may be a single layer or multiple layers. There are many variations such as.

The first pixel electrode 111, the second pixel electrode 112, and the third pixel electrode 113 may have a thickness of about 50 nm to about 110 nm. When the thicknesses of the first pixel electrode 111, the second pixel electrode 112 and the third pixel electrode 113 satisfy the above-described ranges, excellent luminescent characteristics can be exhibited without substantial increase in driving voltage.

The first pixel electrode 111, the second pixel electrode 112, and the third pixel electrode 113 may be disposed on a substrate (not shown).

The substrate may be a glass substrate, a metal substrate, a plastic substrate, or the like that is excellent in mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness. For example, the substrate may be formed of a material selected from the group consisting of polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethyeleneterephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide (PI), polycarbonate (PC) or cellulose acetate propionate (CAP) . ≪ / RTI >

For example, in the case of a bottom emission type in which light from the light emitting layers 131, 132, and 133 is emitted toward the substrate, the substrate may be transparent.

As another example, when the light of the light emitting layers 131, 132, and 133 is a top emission type in which light is emitted in a direction opposite to the substrate, the substrate does not necessarily have to be transparent, and may be opaque or translucent. In this case, the substrate can be formed of metal. When the substrate is formed of metal, the substrate may include at least one selected from the group consisting of carbon, iron, chromium, manganese, nickel, titanium, molybdenum, stainless steel (SUS), Invar alloy, Inconel alloy and Kovar alloy, But is not limited thereto.

1A, a buffer layer, a thin film transistor, an organic insulating layer, and the like may be further interposed between the substrate and the first pixel electrode 111, the second pixel electrode 112, and the third pixel electrode 113.

The OLED display 1 includes a first pixel electrode 111, a second pixel electrode 112 and a counter electrode 150 opposed to the third pixel electrode 113.

The counter electrode 150 may include a first counter electrode region corresponding to the first light emitting region, a second counter electrode region corresponding to the second light emitting region, and a third counter electrode region corresponding to the third light emitting region.

The counter electrode 150 may be formed as a transmissive, semi-transmissive or reflective electrode.

When the counter electrode 150 is of a transmission type, the counter electrode 150 is formed of a material selected from the group consisting of Li, Ag, Mg, Al, Al-Li, Ca, But is not limited to, at least one selected from the group consisting of magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ITO and IZO.

Of course, the present invention is not limited to this, and the counter electrode 150 may be formed of various materials, and the structure thereof may be a single layer or a multilayer.

The thickness of the counter electrode 150 may be about 8 nm to about 10 nm. When the thickness of the cathode 123 satisfies the above-described range, excellent luminescence characteristics can be exhibited without substantial increase in the driving voltage.

For example, the organic light emitting diode display 1 may be a top emission type. In this case, the first pixel electrode 111, the second pixel electrode 112, and the third pixel electrode 113 may be reflective or semi-transparent, and the counter electrode 150 may be transmissive. In addition, the substrate 150 may be transmissive.

As another example, the organic light emitting diode display 1 may be a back light emitting type. In this case, the first pixel electrode 111, the second pixel electrode 112, and the third pixel electrode 113 may be of a transmissive type, and the counter electrode 150 may be of a reflective type or a semi-transmissive type. In addition, the substrate 150 may be reflective or semi-transmissive.

The OLED display 1 is disposed between the first pixel electrode 111 and the second pixel electrode 112 and between the third pixel electrode 113 and the counter electrode 150 and includes the light emitting layers 131, .

The light emitting layers 131, 132, and 133 are disposed corresponding to the first light emitting areas and include a first light emitting layer 131 that emits the first color light; A second light emitting layer 132 disposed corresponding to the first light emitting region, the second light emitting region, and the third light emitting region and emitting a second color light; And a third emission layer 133 disposed corresponding to the third region and emitting a third color light.

If the second light emitting layer 132 is disposed entirely in the first light emitting region, the second light emitting region, and the third light emitting region, the number of masks required to manufacture the OLED display 1 can be reduced.

In addition, in the case where the first light emitting region, the second light emitting region, and the third light emitting region are arranged in the form of penta, the appearance frequency of the second light emitting region may be higher than that of the first light emitting region and the third light emitting region. In this case, by disposing the second light emitting layer as a whole in the first light emitting region, the second light emitting region and the third light emitting region, compared with the case where the first light emitting layer and / or the third light emitting layer, The phenomenon can be reduced. Here, the mask shadow phenomenon means a phenomenon in which a material is deposited in a region where a material is not to be deposited.

In one embodiment, the second emission layer 132 includes a first region corresponding to the first emission region, a second region corresponding to the second emission region, and a third region corresponding to the third emission region , The first region being interposed between the first light emitting layer (131) and the first pixel electrode (111); The third region may be interposed between the third light emitting layer 133 and the third pixel electrode 113. That is, the second light emitting layer 132 may be disposed as a common layer under the first light emitting layer 131 and the third light emitting layer 133.

The maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light are longer than the maximum emission wavelength of the third color light, respectively.

The first color light, the second color light and the third color light may be mixed to represent white light.

For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light, but the present invention is not limited thereto.

Specifically, the maximum emission wavelength of the first color light is selected from about 620 nm to about 750 nm; And each of the maximum emission wavelengths of the second color light is selected from about 495 nm to about 570 nm; The maximum emission wavelength of the third color light may be selected from about 450 nm to about 495 nm, but is not limited thereto.

The first color light and the second color light are emitted as n-th order resonance; The third color light is emitted as (n + 1) -th order resonance; Here, n is a natural number of 1 or more.

The first color light and the second color light are emitted as n-th order resonance, and the third color light is emitted as (n + 1) th order resonance, so that the thickness of the intermediate layer can be thinned. Therefore, the amount of material used for the intermediate layer can be reduced. Further, as the thickness of the intermediate layer becomes thinner, the driving voltage of the organic light emitting diode display 1 can be reduced and the current efficiency can be increased.

Since the first light emitting region and the second light emitting region have an nth order resonance structure and the third light emitting region has an (n + 1) th order resonance structure, defects of the organic light emitting diode display 1 and / Can be reduced.

For example, n may be selected from 1 and 2, but is not limited thereto.

As another example, n may be 1, but is not limited thereto.

In one embodiment, the first color light and the second color light are emitted as a first resonance, and the third color light is emitted as a second resonance, but the present invention is not limited thereto.

In another embodiment, the first color light and the second color light are emitted as a second resonance, and the third color light is emitted as a third resonance, but the present invention is not limited thereto.

The second light emitting layer 132 includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region, And the second color light can be emitted only in the second region. At this time, the first region and the second region of the second light emitting layer 132 may serve to transfer holes.

The light emitting layers 131, 132, and 133 may include a host and a dopant. The dopant may include at least one of a phosphorescent dopant and a fluorescent dopant.

For example, Alq3 (tris (8-hydroxyquinolino) aluminum), CBP (4,4'-bis (N-carbazolyl) -1,1'-biphenyl) PVK (n-vinylcabazole), ADN (naphthalene-2-yl) anthracene, TCTA (4,4 ', 4 "-tris (carbazol-9-yl) TPBi (2,2 ', 2 "- (1,3,5-Benzinetriyl) -tris (1-phenyl-1- H -benzimidazole)), TBADN (3-tert-butyl-9,10-di (naphth- 2-yl) anthracene, distyryl arylene, CDBP (4,4'-bis (9-carbazolyl) -2,2'-dimethylbiphenyl), MADN (2-Methyl-9,10- naphthalen-2-yl) anthracene and the like.

A first light emitting layer 131 are _{PtOEP, Ir (piq) 3,} Btp 2 Ir (acac), Ir (piq) 2 (acac), Ir (2-phq) 2 (acac), Ir (2-phq) 3, such as _{Eu (DBM) 3 (Phen)} (tris (di benzoylmethanato) phenanthoroline europium), perylene (perylene) _{derivative: Ir (flq) 2 (acac} ), Ir (fliq) 2 (acac), DCM, DCJTB, PBD But it is not limited thereto.

PtOEP Ir (piq) ₃ Btp ₂ Ir (acac)

Ir (piq) ₂ (acac) Ir (2-phq) ₂ (acac) Ir (2-phq) ₃

Ir (flq) ₂ (acac) Ir (fliq) ₂ (acac)

DCM   DCJTB

A second light emitting layer 132 is _{Ir (ppy) 3 (tris (} 2-phenylpyridine) iridium: tris (2-phenylpyridine) iridium), Ir (ppy) ₂ (acac) (Bis (2-phenylpyridine) (Acetylacetonato) iridium (III): bis (2-phenylpyridine) (acetylacetonate) iridium (III)), Ir (mppy ) 3 (tris (2- (4-tolyl) phenylpiridine) iridium: tris (2- (4-tolyl) phenyl (2-benzothiazolyl) -1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H, 11H- [1] benzopyrano [ 8-ij] -quinolizin-11-one: 10- (2-benzothiazolyl) - 1,1,7,7-tetramethyl-2,3,6,7, -tetrahydro- [1] benzopyrano [6,7,8-ij] -quinolizin-11-one), and the like as a dopant, but the present invention is not limited thereto.

Ir (ppy) ₃ Ir (mppy) ₃ Ir (ppy) ₂ (acac)

C545T

The third light emitting layer 133 may be formed of a material selected from the group consisting of 4,6-F ₂ Irpic, (F ₂ ppy) ₂ Ir (tmd), Ir (dfppz) ₃ , ter- (4-diphenylaminostyryl) biphenyl: 4,4'-bis (4-diphenylaminostyryl) biphenyl), spiro- DPVBi, TBPe (2,5,8,11-tetra- (2,5,8,11-tetra-t-butylperylene), DSB (distyryl-benzene), distyryl-arylene (DSA), polyfluorene (PFO) and poly (p- Based polymer may be included as a dopant, but the present invention is not limited thereto.

F ₂ Irpic (F ₂ ppy) ₂ Ir (tmd) Ir (dfppz) ₃

DPAVBi

            DPVBi TBPe

The content of the dopant in the light-emitting layers 131, 132, and 133 may be selected from the range of about 0.01 to about 15 parts by weight per 100 parts by weight of the host, but is not limited thereto.

In one embodiment, the first distance L ₁ between the surface of the first counter electrode region in the direction of the first pixel electrode and the surface of the first pixel electrode 111 in the direction of the first counter electrode region, And a second distance between the surface of the second counter electrode region in the direction of the second pixel electrode and the surface of the second pixel electrode in the direction of the second counter electrode region corresponds to the nth order resonance distance of the first color light, (L ₂ ) corresponds to the n-th order resonance distance of the second color light, and the surface of the third counter electrode region in the direction of the third pixel electrode and the surface of the third pixel electrode The third distance L ₃ between the surfaces may correspond to the (n + 1) th order resonance distance of the third color light, but is not limited thereto.

In another embodiment, L ₁ , L ₂ and L ₃ may satisfy the following formulas 1 to 3, respectively, but are not limited thereto.

<Formula 1>

L ₁ = λ ₁ / 2N ₁ × n

<Formula 2>

L ₂ = λ ₂ / 2N ₂ × n

<Formula 3>

L ₃ =? ₃ / 2N ₃ (n + 1)

Of the above formulas 1 to 3,

L ₁ is a distance between the first pixel electrode and the counter electrode;

L ₂ is a distance between the second pixel electrode and the counter electrode;

L ₃ is a distance between the third pixel electrode and the counter electrode;

₁ is the maximum emission wavelength of the first color light;

₂ is the maximum emission wavelength of the second color light;

? ₃ is the maximum emission wavelength of the third color light;

N ₁ is the refractive index of the intermediate layer interposed between the first pixel electrode and the counter electrode;

N ₂ is the refractive index of the intermediate layer interposed between the second pixel electrode and the counter electrode;

And N ₃ is a refractive index of the intermediate layer interposed between the third pixel electrode and the counter electrode.

In yet another embodiment, n is 1, the L ₁ is from about 100 nm to about 120 nm, the L ₂ is from about 80 nm to about 100 nm, and the L ₃ is from about 175 nm to about 195 nm, It is not.

In yet another embodiment, n is 2, the L ₁ is from about 265 nm to about 285 nm, the L ₂ is from about 225 nm to about 245 nm, and the L ₃ is from about 290 nm to about 310 nm, It is not.

The intermediate layer includes a hole transport region 120 interposed between the first pixel electrode 111, the second pixel electrode 112 and the third pixel electrode 113 and the light emitting layers 131, 132 and 133, And / or an electron transport region 140 interposed between the light emitting layers 131, 132, and 133 and the counter electrode 150. The intermediate layer is formed between the first pixel electrode 111 and the first resonance control layer 141 interposed between the first light emitting layer 131 and the third pixel electrode 113 and the third light emitting layer 133 And a third resonance control layer 143 interposed therebetween.

The thickness of the intermediate layer can be adjusted by referring to the description of L ₁ to L ₃ .

For example, L ₃ may be greater than L ₁ and L ₂ . Further, L ₁ may be larger than L ₂ because the first color light has a longer wavelength than the second color light.

The hole transporting region 120 may be formed of a single layer structure consisting of i) a single layer of a single material, ii) a single layer of a single layer of a plurality of different materials, or iii) a plurality of layers of a plurality of different materials Having a multi-layer structure.

The hole transporting region 120 may include at least one layer selected from a hole injecting layer (HIL), a hole transporting layer (HTL), a light emitting auxiliary layer and an electron blocking layer (EBL).

For example, the hole transporting region 120 may have a single layer structure of a single layer made of a plurality of different materials, or may have a single layer structure including a first pixel electrode 111, a second pixel electrode 112, The hole injecting layer / the hole transporting layer, the hole transporting layer / the light emitting auxiliary layer, the hole injecting layer / the light emitting auxiliary layer, the hole transporting layer / the light emitting auxiliary layer or the hole injecting layer / the hole transporting layer / But it is not limited thereto.

The hole transport region 120 may be formed by a combination of m-MTDATA, TDATA, 2-TNATA, NPB (NPD), beta-NPB, TPD, Spiro-TPD, Spiro- NPB, methylated -NPB, TAPC, HMTPD, 4 ', 4 "-tris (N-carbazolyl) triphenylamine (4,4', 4" -tris (N-carbazolyl) triphenylamine), Pani / DBSA (Polyaniline / Dodecylbenzenesulfonic acid ), PEDOT / PSS (poly (3,4-ethylenedioxythiophene) / poly (4-styrenesulfonate) / poly (4-styrenesulfonate) At least one hole transporting material selected from polyaniline / camphor sulfonic acid (polyaniline / camphorsulfonic acid) and PANI / PSS (polyaniline / poly (4-styrenesulfonate) :

The electron transport region 140 may be formed of a single layer structure consisting of i) a single layer of a single material, ii) a single layer of a single layer of a plurality of different materials, or iii) a plurality of layers of a plurality of different materials Layer structure.

The electron transport region 140 may include at least one layer selected from a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer (ETL), and an electron injection layer, but is not limited thereto.

For example, the electron transporting region 140 includes an electron transporting layer / electron injecting layer, a hole blocking layer / electron transporting layer / electron injecting layer, an electron controlling layer / electron transporting layer / electron injecting layer stacked in order from the light emitting layers 131, A buffer layer / an electron transport layer / an electron injection layer, and the like, but the present invention is not limited thereto.

The electron transport region (140), BCP (2,9-Dimethyl-4,7 -diphenyl-1,10-phenanthroline), Bphen (4,7-Diphenyl-1,10-phenanthroline), Alq 3, BAlq (Bis (2-methyl-8-quinolinolato -N1, O8) - (1,1'-Biphenyl-4-olato) aluminum), TPBi, TAZ (3- (Biphenyl-4-yl) -5- (4- tert - among butylphenyl) -4-phenyl-4 H -1,2,4-triazole) and NTAZ (4- (Naphthalen-1- yl) -3,5-diphenyl-4H-1,2,4-triazole) selected at least May contain one compound.

The electron transport region 140 (e. G., The electron transport layer in the electron transport region) may further include a metal-containing material in addition to the materials as described above.

The metal-containing material may include at least one selected from an alkali metal complex and an alkaline earth metal complex. The metal ion of the alkali metal complex may be selected from Li ion, Na ion, K ion, Rb ion and Cs ion, and the metal ion of the alkaline earth metal complex is selected from the group consisting of Be ion, Mg ion, Ca ion, Ions. The ligand coordinated to the metal ion of the alkali metal complex and the alkaline earth metal complex may be independently selected from the group consisting of hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl There may be mentioned oxazole, hydroxyphenyl thiazole, hydroxydiphenyl oxadiazole, hydroxydiphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzoimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline And cyclopentadiene, but is not limited thereto.

For example, the metal-containing material may comprise a Li complex. The Li complex may include, for example, the following compound ET-D1 (lithium quinolate, LiQ) or ET-D2.

The electron transport region 140 may include an electron injection layer that facilitates electron injection from the counter electrode 150. The electron injection layer may be in direct contact with the counter electrode 150.

The electron injection layer may be a single layer structure consisting of i) a single layer made of a single material, ii) a single layer made of a plurality of different materials, or iii) a multi-layered structure having a plurality of layers made of a plurality of different materials Lt; / RTI &gt;

The electron injecting layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

The alkali metal may be selected from Li, Na, K, Rb and Cs. According to one embodiment, the alkali metal may be Li, Na or Cs. According to another embodiment, the alkali metal may be Li or Cs, but is not limited thereto.

The alkaline earth metal may be selected from Mg, Ca, Sr, and Ba.

The rare earth metal may be selected from among Sc, Y, Ce, Tb, Yb and Gd.

The alkali metal compound, the alkaline earth metal compound and the rare earth metal compound may be selected from an oxide and a halide (for example, fluoride, chloride, bromide, iodide, etc.) of the alkali metal, the alkaline earth metal and the rare earth metal have.

The alkali metal compound may be selected from among alkali metal oxides such as Li ₂ O, Cs ₂ O and K ₂ O and alkali metal halides such as LiF, NaF, CsF, KF, LiI, NaI, CsI and KI. According to one embodiment, the alkali metal compound may be selected from LiF, Li ₂ O, NaF, LiI, NaI, CsI, and KI, but is not limited thereto.

The alkaline earth metal compound may be selected from among alkaline earth metal compounds such as BaO, SrO, CaO, Ba _x Sr _{1 - x} O (0 <x <1), Ba _x Ca _{1 -x} O have. According to one embodiment, the alkaline earth metal compound may be selected from BaO, SrO, and CaO, but is not limited thereto.

The rare earth metal compound may be selected from YbF ₃ , ScF ₃ , ScO ₃ , Y ₂ O ₃ , Ce ₂ O ₃ , GdF ₃ , and TbF ₃ . According to one embodiment, the rare earth metal compound are _{YbF 3, ScF 3, TbF 3} , YbI 3, ScI 3, TbI 3 may be selected from, but is not limited to such.

The alkali metal complex, the alkaline earth metal complex and the rare earth metal complex contain ions of an alkali metal, an alkaline earth metal and a rare earth metal as described above, and the alkali metal complex, the alkaline earth metal complex and the rare earth metal complex coordinated to the metal ion of the rare earth metal complex The ligands are, independently of each other, selected from the group consisting of hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, But are not limited to, thiazole, thiodiazole, hydroxydiphenyl thiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzoimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline and cyclopentadiene It is not.

The electron injection layer may be composed of only the alkali metal, alkaline earth metal, rare earth metal, alkali metal compound, alkaline earth metal compound, rare earth metal compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex or any combination thereof as described above , And the organic material. When the electron injecting layer further contains an organic matter, the alkali metal, alkaline earth metal, rare earth metal, alkali metal compound, alkaline earth metal compound, rare earth metal compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, The combination may be uniformly or non-uniformly dispersed in the matrix of the organic material.

The first resonance control layer 141 and the third resonance control layer 143 may be formed by a single layer structure consisting of i) a single layer made of a single material, ii) a single layer made up of a plurality of different materials, or iii) Layer structure having a plurality of layers made of a plurality of different materials.

The first resonance control layer 141 and the third resonance control layer 143 may include the above-described hole transporting material.

The first resonance control layer 141 and the third resonance control layer 143 may be provided to appropriately adjust L ₁ and L ₃ , respectively.

Meanwhile, the OLED display 1 may further include a capping layer (not shown) on the counter electrode 150.

Light generated in the light emitting layer of the organic light emitting diode display 1 may be extracted to the outside through the semi-transparent electrode or the counter electrode 150, which is a transparent electrode, and the capping layer. The capping layer may improve the external light emitting efficiency by the principle of constructive interference.

An organic capping layer made of the capping layer organic material, an inorganic capping layer made of an inorganic material, or a composite capping layer containing an organic material and an inorganic material.

Wherein the capping layer is selected from the group consisting of a carbocyclic compound, a heterocyclic compound, an amine compound, porphine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, an alkali metal complex and an alkaline earth metal complex And may include at least one material. The carbocyclic compound, the heterocyclic compound and the amine compound may be optionally substituted with a substituent containing at least one element selected from O, N, S, Se, Si, F, Cl, .

According to one embodiment, the capping layer may comprise an amine based compound. Specifically, the capping layer may include, but is not limited to, the following compounds HT28 to HT33 and compounds selected from the following compounds CP1 to CP5:

Each layer included in the intermediate layer may be formed by various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett, inkjet printing, laser printing, laser induced thermal imaging (LITI) Or the like, in a predetermined region.

When each layer included in the intermediate layer is formed by a vacuum vapor deposition method, the deposition conditions are, for example, a deposition temperature of about 100 to about 500 DEG C, a vacuum degree of about 10 ^-8 to about ^10-3 torr, May be selected in consideration of the material to be included in the layer to be formed and the structure of the layer to be formed within a deposition rate range of about 100 ANGSTROM / sec.

When each of the layers contained in the intermediate layer is formed by a spin coating method, the coating conditions are, for example, within a range of a coating speed of about 2000 rpm to about 5000 rpm and a heat treatment temperature range of about 80 캜 to 200 캜, The material to be included in the layer and the structure of the layer to be formed.

1B to 1D, the structure of the organic light emitting diode display 1 according to one embodiment will be described in detail, focusing on differences from FIG. 1A. The same reference numerals denote the same elements as those in the above-described embodiment.

1B, the second light emitting layer 132 includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region, The first region is interposed between the first light emitting layer 131 and the counter electrode 150; The third region may be interposed between the third light emitting layer 133 and the counter electrode 150.

1C, the second light emitting layer 132 includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region, The first region is interposed between the first light emitting layer 131 and the first pixel electrode 111; The third region may be interposed between the third light emitting layer 133 and the counter electrode 150.

1D, the second light emitting layer 132 includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region, The first region is interposed between the first light emitting layer 131 and the counter electrode 150; The third region may be interposed between the third light emitting layer 133 and the first pixel electrode 111.

2A to 2D are plan views of an OLED display according to an embodiment of the present invention.

2A to 2D, an organic light emitting display includes a plurality of light emitting regions on a plane defined by a horizontal direction (H) and a vertical direction (V).

In FIG. 2A, three kinds of light emitting regions (first light emitting region, second light emitting region, and third light emitting region) arranged in a stripe form are exemplarily shown. In FIG. 2A, the three kinds of light emitting regions are repeatedly arranged, and the positions of the first light emitting region, the second light emitting region, and the third light emitting region can be maintained without changing according to the rows. For example, the second light emitting region may be adjacent to the first light emitting region in the horizontal direction, and the third light emitting region may be adjacent to the second light emitting region in the horizontal direction. The plurality of light emitting regions may be separated by a non-emitting region (not shown) surrounding each of the plurality of light emitting regions.

In FIG. 2B, three types of luminescent regions (a first luminescent region, a second luminescent region, and a third luminescent region) arranged in a penta-form are exemplarily shown. In FIG. 2B, the three kinds of light emitting regions are repeatedly arranged, and the positions of the first light emitting region, the second light emitting region and the third light emitting region can be changed according to the rows. For example, the second light emitting region may be adjacent to the first light emitting region in the horizontal direction, and the third light emitting region may be adjacent to the first light emitting region in the vertical direction. Specifically, as shown in FIG. 2B, one first light emitting region may be disposed adjacent to two second light emitting regions. The plurality of light emitting regions may be separated by a non-emitting region (not shown) surrounding each of the plurality of light emitting regions.

In FIG. 2C, three types of luminescent regions (a first luminescent region, a second luminescent region, and a third luminescent region) arranged in a form other than a stripe form and a penta form are exemplarily shown. For example, the second light emitting region may be adjacent to the first light emitting region in a first direction D1 inclined in the horizontal direction, and the third light emitting region may be adjacent to the first light emitting region in a horizontal direction . Specifically, as shown in FIG. 2C, one second light emitting region may be surrounded by two first light emitting regions and two third light emitting regions. At this time, the two first light emitting regions may be arranged diagonally with each other, and the two third light emitting regions may be arranged diagonally with respect to each other.

The OLED display 1 may be included in a flat panel display device including a thin film transistor. The thin film transistor may include a source electrode, a drain electrode and an active layer, and one of the source electrode and the drain electrode may be connected to the first pixel electrode 111, the second pixel electrode 112 And the third pixel electrode 113, respectively.

The thin film transistor may further include a gate electrode, a gate insulating film, and the like.

The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, or the like, but is not limited thereto.

The flat panel display device may further include a sealing portion for sealing the organic light emitting diode display 1. The sealing portion allows an image from the organic light emitting diode display 1 to be implemented, and blocks outside air and moisture from penetrating into the organic light emitting diode display 1. The sealing portion may be a sealing substrate including a transparent glass or plastic substrate. The sealing portion may be a thin film encapsulating layer including a plurality of organic layers and / or a plurality of inorganic layers. If the sealing portion is a thin-film sealing layer, the entire flat panel display device can be made flexible.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

Claims (20)

A first pixel electrode, a second pixel electrode, and a third pixel electrode disposed in the first light emitting region, the second light emitting region, and the third light emitting region, respectively;
A counter electrode facing the first pixel electrode, the second pixel electrode, and the third pixel electrode; And
An intermediate layer interposed between the first pixel electrode, the second pixel electrode, the third pixel electrode and the counter electrode, the intermediate layer including a light emitting layer; / RTI &gt;
The light-
A first light emitting layer disposed corresponding to the first light emitting region and emitting a first color light;
A second light emitting layer disposed corresponding to the entire first light emitting region, the second light emitting region, and the third light emitting region, the second light emitting layer emitting a second color light; And
A third light emitting layer disposed corresponding to the third region and emitting a third color light; / RTI &gt;
The maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light are longer than the maximum emission wavelength of the third color light,
The first color light and the second color light are emitted as n-th order resonance;
The third color light is emitted as (n + 1) -th order resonance;
Wherein n is a natural number of 1 or more. The method according to claim 1,
and n is selected from 1 and 2. The method according to claim 1,
Wherein the counter electrode includes a first counter electrode region corresponding to the first light emitting region, a second counter electrode region corresponding to the second light emitting region, and a third counter electrode region corresponding to the third light emitting region,
Wherein a first distance (L ₁ ) between a plane of the first counter electrode region in the direction of the first pixel electrode and a plane of the first pixel electrode in the direction of the first counter electrode region is a n-th order resonance distance Respectively,
And a second distance (L ₂ ) between a plane of the second counter electrode region in the direction of the second pixel electrode and a plane of the second pixel electrode in the direction of the second counter electrode region is a n-th order resonance distance Respectively,
And a third distance (L ₃ ) between a surface of the third counter electrode region in the direction of the third pixel electrode and a surface of the third pixel electrode in the direction of the third counter electrode region corresponds to (n + 1 ) &Lt; / RTI &gt; resonance distance. The method according to claim 1,
n is 1,
Wherein L &_lt; ₁ &gt; is from about 100 nm to about 120 nm,
L ₂ is from about 80 nm to about 100 nm,
And L &lt; ₃ &gt; is about 175 nm to about 195 nm. The method according to claim 1,
n is 2,
Wherein L &_lt; ₁ &gt; is from about 265 nm to about 285 nm,
L &lt; ₂ &gt; is from about 225 nm to about 245 nm,
And L &lt; ₃ &gt; is about 290 nm to about 310 nm. The method according to claim 1,
Wherein the first color light is red light, the second color light is green light, and the third color light is blue light. The method according to claim 1,
i) the first pixel electrode, the second pixel electrode, and the third pixel electrode are reflective or transflective; and the counter electrode is transmissive;
and ii) the first pixel electrode, the second pixel electrode, and the third pixel electrode are of a transmissive type, and the counter electrode is of a reflective type or a transflective type. The method according to claim 1,
Wherein the second light emitting layer includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region,
The first region being interposed between the first light emitting layer and the first pixel electrode;
And the third region is interposed between the third light emitting layer and the third pixel electrode. The method according to claim 1,
Wherein the second light emitting layer includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region,
The first region being interposed between the first light emitting layer and the counter electrode;
And the third region is interposed between the third light emitting layer and the counter electrode. The method according to claim 1,
Wherein the second light emitting layer includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region,
The first region being interposed between the first light emitting layer and the first pixel electrode;
And the third region is interposed between the third light emitting layer and the counter electrode. The method according to claim 1,
Wherein the second light emitting layer includes a first region corresponding to the first light emitting region, a second region corresponding to the second light emitting region, and a third region corresponding to the third light emitting region,
The first region being interposed between the first light emitting layer and the counter electrode;
And the third region is interposed between the third light emitting layer and the first pixel electrode. The method according to claim 1,
Wherein the intermediate layer further includes a hole transporting region interposed between the first pixel electrode, the second pixel electrode, and the third pixel electrode and the light emitting layer. The method according to claim 1,
Wherein the intermediate layer further comprises an electron transporting region interposed between the light emitting layer and the counter electrode. The method according to claim 1,
Wherein the intermediate layer further comprises a first resonance control layer interposed between the first pixel electrode and the first light emitting layer. The method according to claim 1,
Wherein the intermediate layer further includes a third resonance control layer interposed between the third pixel electrode and the third light emitting layer. The method according to claim 1,
The second light emitting region is adjacent to the first light emitting region in the horizontal direction,
And the third light emitting region is adjacent to the second light emitting region in the horizontal direction. The method according to claim 1,
The second light emitting region is adjacent to the first light emitting region in the horizontal direction,
And the third light emitting region is adjacent to the first light emitting region in the vertical direction. The method according to claim 1,
The second light emitting region is adjacent to the first light emitting region in a first direction inclined in the horizontal direction,
And the third light emitting region is adjacent to the first light emitting region in the horizontal direction. A first pixel electrode, a second pixel electrode, and a third pixel electrode spaced apart from each other in the first light emitting region, the second light emitting region, and the third light emitting region;
A counter electrode facing the first pixel electrode, the second pixel electrode, and the third pixel electrode; And
An intermediate layer interposed between the first pixel electrode, the second pixel electrode, the third pixel electrode and the counter electrode, the intermediate layer including a light emitting layer; / RTI &gt;
The light-
A first light emitting layer disposed corresponding to the first light emitting region and emitting a first color light;
A second light emitting layer disposed corresponding to the entire first light emitting region, the second light emitting region, and the third light emitting region, the second light emitting layer emitting a second color light; And
And a third light emitting layer disposed corresponding to the third region and emitting a third color light,
The maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light are longer than the maximum emission wavelength of the third color light,
i) the first color light and the second color light are emitted in a first resonance, and the third color light is emitted in a second resonance; Or ii) the first color light and the second color light are emitted as a second resonance, and the third color light is emitted as a third resonance. A thin film transistor including a source electrode, a drain electrode, and an active layer; And
An organic light emitting display device comprising the organic light emitting display device according to any one of claims 1 to 19,
Wherein the first pixel electrode, the second pixel electrode, and the third pixel electrode of the organic light emitting display device are electrically connected to one of the source electrode and the drain electrode.

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