KR20190021293A - Memristor using layered organic-inorganic hybrid perovskite - Google Patents

Abstract

The present invention relates to a memristor based on a layered organic-inorganic composite perovskite exhibiting an extremely high on-off ratio in a very low electric field; and to a manufacturing method thereof. The memristor comprises: a first electrode; a second electrode; and a switching layer containing the layered organic-inorganic composite perovskite.

Description

(MEMRISTOR USING LAYERED ORGANIC-INORGANIC HYBRID PEROVSKITE)

The present invention provides a memristor using a layered organic / inorganic composite perovskite and a method of manufacturing the same.

A memristor is a recently discovered fourth device with basic circuit elements, resistors, capacitors, and inductors. The memristor is a passive element having a memory function, and is a device exhibiting hysteresis resistance characteristics in accordance with the direction of a voltage change, unlike a conventional passive element. That is, the memristor is a material having a characteristic that a specific amount of charge is stored and the resistance changes according to the amount of charge. Also, when the power supply is cut off, the amount and direction of the current passed immediately before are stored, and the existing state is restored when the power is supplied.

In Korean Patent Publication No. 10-1474812, an electroforming process is required for resistive switching of a memristor switch device, and this electrical switching occurs from the combined motion of electrons and ions in the material contained in the switching layer . However, such conventional electron forming processes typically have a problem of durability such as poor switching frequency between on-off and reversible.

The present invention provides a memristor using a layered organic / inorganic composite perovskite and a method of manufacturing the same.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to a first aspect of the present invention, there is provided a plasma display panel comprising: a first electrode; A second electrode; And a layer containing a layered organic / inorganic composite perovskite or a switching layer containing a layered organic / inorganic composite perovskite, wherein the layer containing the layered organic / inorganic composite perovskite or the layered inorganic / organic composite And a switching layer containing perovskite is located between the first electrode and the second electrode.

According to a second aspect of the present invention, there is provided a method comprising: forming a first electrode; Forming a switching layer containing a layered organic / inorganic composite perovskite or a layered organic / inorganic composite perovskite on the first electrode; And a step of forming a second electrode in a layer containing the layered organic / inorganic composite perovskite or a switching layer containing the layered organic / inorganic composite perovskite.

According to the embodiments of the present invention, the conventional MEMSl technology, which is based on an expensive process, exhibits a high switching voltage and a low on-off ratio, while applying the present organic / inorganic composite perovskite to a memristor , There is a very high on-off ratio at very low electric fields.

According to embodiments of the present invention, it is economical to fabricate a memristor including an inorganic / organic composite perovskite material by an inexpensive process. In addition, the electro-forming process for reversible resistance switching is essential in conventional memristors, and the memristor according to the present invention has a high resistance state (HRS, the current can be changed by changing from a high resistance state to a low resistance state (LRS).

According to embodiments of the present invention, when a layered organic / inorganic composite perovskite structure is used, it is more stable against external environment such as moisture than the case of using a perovskite having a 3D-cubic structure. In addition, the layered organic-inorganic composite perovskite can be self-assembled and deposited by a solution process, so that an excellent film quality having a high crystallinity can be obtained by a relatively simple method.

Figure 1 is a schematic diagram of a memristor, in one embodiment of the invention.
Figure 2 is an XRD pattern of BA ₂ PbI ₄ , BA ₂ MAPb ₂ I ₇ , BA ₂ MA ₂ Pb ₃ I ₁₀ , and BA ₂ MA ₃ Pb ₄ I ₁₃ , in one embodiment of the present invention, BA stands for CH ₃ (CH ₂ ) ₃ NH ₃ , and MA stands for CH ₃ NH ₃ .
Figure 3 shows that in an embodiment of the invention BA ₂ PbI ₄ , BA ₂ MAPb ₂ I ₇ , BA ₂ MA ₂ Pb ₃ I ₁₀ , and BA ₂ MA ₃ Pb ₄ I ₁₃ are each coated on a platinum substrate It is a photograph.
Figures 4A-4D illustrate that in an embodiment of the present invention, the current-voltage of BA ₂ PbI ₄ , BA ₂ MAPb ₂ I ₇ , BA ₂ MA ₂ Pb ₃ I ₁₀ , and BA ₂ MA ₃ Pb ₄ I ₁₃ materials Respectively.
Figure 5 shows that, in one embodiment of the invention, BA ₂ MAPb ₂ I ₇ And the current-voltage curve of FIG.
6 is a graph showing the current-voltage characteristics of BA ₂ PbI _{4 in} the initial 10 cycles in one embodiment of the present invention.
7 is a graph showing the current-voltage characteristics of BA ₂ MAPb ₂ I _{7 in} the initial 10 cycles in one embodiment of the present application.
FIG. 8 is a graph showing BA ₂ PbI ₄ current-voltage characteristics for an initial 100 cycles in one embodiment of the present invention.
FIG. 9 is a graph showing the initial 100 cycles of BA ₂ PbI ₄ current-voltage characteristics, in one embodiment of the present invention, with respect to resistance.
10A and 10B illustrate that, in one embodiment of the invention, BA ₂ PbI ₄ Current characteristic of the switching layer including the layered perovskite.
11A and 11B are graphs showing voltage-current characteristics of a switching layer including MAPbI ₃ 3D perovskite, respectively, in one embodiment of the present invention.
12A and 12B show the result of measuring the endurance under the pulse voltage condition of BA ₂ PbI ₄ in one embodiment of the present invention.
Figures 13A and 13B illustrate that in one embodiment of the present invention, BA ₂ PbI ₄ And MAPBI ₃ And a graph showing the initial ten cycles of the current-voltage characteristic according to the voltage sweep.
14A and 14B are graphs showing the current-voltage characteristics of BA ₂ PbI ₄ and MAPbI ₃ in terms of resistance, in one embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as " including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise.

The terms " about ", " substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure.

The word " step (or step) " or " step " used to the extent that it is used throughout the specification does not mean " step for.

Throughout this specification, the term " combination (s) thereof " included in the expression of the machine form means a mixture or combination of one or more elements selected from the group consisting of the constituents described in the expression of the form of a marker, Quot; means at least one selected from the group consisting of the above-mentioned elements.

Throughout this specification, the description of "A and / or B" means "A or B, or A and B".

Throughout this specification, an "alkyl group" is typically an alkyl group having from 1 to 24 carbon atoms, from 1 to 20 carbon atoms, from 1 to 15 carbon atoms, from 1 to 10 carbon atoms, from 1 to 8 carbons Represents a linear or branched alkyl group having from 1 to 5 carbon atoms, or from 1 to 3 carbon atoms. When the alkyl group is substituted with an alkyl group, it is also used interchangeably as a " branched alkyl group ". Examples of the substituent which may be substituted on the alkyl group include a halogen group (for example, F, Cl, Br or I), a haloalkyl group (for example, CC1 ₃ or CF ₃ ), an alkoxy group, an alkylthio group, (-OC (O) -R), an amino group (-NH ₂ ), a carbamoyl group (-NH ₂ ), a carbamoyl group But are not limited to, at least one selected from the group consisting of a halogen atom (-C (O) -NHR), urea (-NH-C (O) -NHR-), and a thiol group have. In addition, the alkyl group having 2 or more carbon atoms in the alkyl group described above may include, but not limited to, at least one carbon to carbon double bond or at least one carbon to carbon triple bond. Examples of the substituent include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, a tridecyl group, But are not limited to, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosanyl, or all possible isomers thereof. For example, the alkyl group used in the present invention is an alkyl group having 1 to 10 carbon atoms, that is, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, Or an alkyl group having 1 to 6 carbon atoms, that is, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, or a hexyl group, or an alkyl group having 1 to 4 carbon atoms, , i-propyl group, n-propyl group, t-butyl group, s-butyl group, or n-butyl group.

Throughout this specification, the term " halogen " or " halo " means that the halogen atom belonging to group 17 of the periodic table is included in the compound as a form of a functional group, and may be, for example, chlorine, bromine, fluorine or iodine , But may not be limited thereto.

Hereinafter, embodiments and examples of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to these embodiments and examples and drawings.

According to a first aspect of the present invention, there is provided a plasma display panel comprising: a first electrode; A second electrode; And a layer containing a layered organic / inorganic composite perovskite or a switching layer containing a layered organic / inorganic composite perovskite, wherein the layer containing the layered organic / inorganic composite perovskite or the layered inorganic / organic composite And a switching layer containing perovskite is located between the first electrode and the second electrode.

1, the memristor includes a first electrode 100, a second electrode 300, and a layer containing an organic-inorganic complexed perovskite interposed therebetween, Or a transition layer 200 containing an organic or inorganic complex perovskite.

In one embodiment of the present invention, the switching layer refers to a layer in which resistance changes, and may be applied to switching driving by varying resistance depending on the magnitude and direction of a voltage. Specifically, the resistance variable layer may be formed in a high resistance state (HRS) or a high resistance state by a change in an energy distribution, a structural change, or an oxidation-reduction reaction of ions existing in the resistance variable layer due to movement of ions or defects in the electric field. The low resistance state (LRS) can be maintained so that switching in the layer is drivable from the combined motion of electrons and ions in the material by the voltage.

In one embodiment of the present invention, the layer containing the layered organic / inorganic composite perovskite or the switching layer containing the layered organic / inorganic composite perovskite forms a conduction channel during operation of the memristor, - < / RTI > determining the off state.

In one embodiment of the present application, the layered organic-inorganic composite perovskite may include a perovskite structure satisfying the following formulas, wherein R, R ', and M are each a cation, X Is an anion. However, it is not limited thereto:

(1) a Dion-Jacobson structure in which R is included between n R'MX ₃ structures: R [R ' _n-1 M _n X _{3n + 1} ]; (2) Double perovskite structure consisting of alternating R cation and R 'cation: RR'M ₂ X ₆ ; (3) Ruddlesden-Popper structure in which R (mainly a cation larger than R ') is formed by replacing R' for every n R'MX ₃ structures: R ₂ R ^' _{n - 1} M _n X _{3n +1} ; Or (4) Bi ₂ O ₂ are n ABX Aurivillius structure into each between the structure _{3, Bi 2 O 2 [R n} - 1 M n X 3n +1].

In one embodiment of the present invention, the layered organic-inorganic composite perovskite may include an inorganic or organic perovskite material represented by any one of the following Chemical Formulas 1 to 3:

[Chemical Formula 1]

RR ' _{n - 1} M _n X _{3n +1} ;

(2)

RR'M ₂ X ₆ ;

(3)

R ₂ R ' _{n - 1} M _n X _{3n +1} ;

In Formula 1 to Formula 3, each independently, n is number greater than or equal to 1, M is Cu ^{2 +,} Ni ^{2 +,} Co ^{2 +,} Fe ^{2 +,} Mn ^{2 +,} Cr ^{2 +,} Pd ^{2 +, Cd 2 +, Yb 2 +,} Pb 2 +, Sn 2 +, Ge 2 +, Bi 3 +, Sb 3+, and comprises a cation of a metal selected from the group consisting of and combinations thereof, R and R 'Lt; / RTI > are each independently an organic cation and X comprises an anion.

In one embodiment of the present invention, each of R ¹ and R 'in the above Chemical Formulas 1 to 3 independently represents a monovalent organic group represented by (R ¹ R ² R ³ R ⁴ N) ⁺ Ammonium cation. For example, each of R ¹ to R ⁴ independently represents hydrogen, a substituted or unsubstituted linear or branched alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, An aryl group having 6 to 20 carbon atoms which is unsubstituted, a substituted or unsubstituted heteroaryl group having 5 to 20 carbon atoms, and combinations thereof.

In one embodiment of the present invention, each of R 1 and R 'in the above Chemical Formulas 1 to 3 independently represents a monovalent organic ammonium ion represented by (R ⁵ -NH ₃ ) ⁺ have. For example, R ⁵ is hydrogen, a substituted or unsubstituted linear or branched alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms A substituted or unsubstituted aryloxy group, a substituted or unsubstituted heteroaryl group having 5 to 20 carbon atoms, and combinations thereof.

In one embodiment of the present invention, each of R 1 and R 'independently represents a group represented by the formula (R ⁶ R ⁷ N═CH-NR ⁸ R ⁹ ) ⁺ Lt; / RTI > can be a monovalent formamidinium cation. For example, each of R ⁶ to R ⁹ independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, But are not limited to, those selected from the group consisting of, and combinations thereof.

In one embodiment of the present application, R ¹ to R ⁹ each independently may be an alkyl group, and may contain 1 to 24 carbon atoms, 1 to 20 carbon atoms, 1 to 15 carbon atoms, 1 But is not limited to, a linear or branched alkyl group having from 1 to 10 carbon atoms, from 1 to 8 carbon atoms, from 1 to 5 carbon atoms, or from 1 to 3 carbon atoms. For example, the linear or branched alkyl group may be a linear or branched alkyl group having 1 to 20 carbon atoms such as methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, But are not limited to, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosanyl, or all possible isomers thereof.

In one embodiment of the present invention, the substituent on the alkyl group may be 1, 2, or 3, but is not limited thereto. For example, the substituent which may be substituted on the alkyl group may be a halogen group (e.g. F, Cl, Br, or I), a haloalkyl group (e.g., CC1 ₃ or CF ₃ ), an alkoxy group, (-C (O) -OR), an alkylcarbonyloxy group (-OC (O) -R), an amino group (-NH ₂ ), a carboxy group But are not limited to, a bamoyl group (-C (O) -NHR), urea (-NH-C (O) -NHR-) and a thiol group (-SH).

In one embodiment of the present invention, the alkyl group having at least 2 carbon atoms in the alkyl group may include at least one carbon to carbon double bond or at least one carbon to carbon triple bond, but is not limited thereto.

In one embodiment of the present invention, when the alkyl group is substituted, the substituent on the alkyl group may be one or more substituents selected from the following substituents, but is not limited thereto: substituted or unsubstituted C1 to C20 A substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a cyano group, an amino group, an alkylamino group having 1 to 10 carbon atoms, a dialkylamino group having 1 to 10 carbon atoms, an arylamino group, An amino group, an amide group, a hydroxyl group, an oxo group, a halo group, a carboxyl group, an amino group, an amino group, an amino group, a diarylamino group, an arylalkylamino group, a carboxyl group, an ester group, an acyl group, an acyloxy group, an alkoxy group having 1 to 20 carbon atoms, an aryloxy group, a haloalkyl group (e.g., haloa a sulfonyl group, a thiol group, an alkylthio group having 1 to 10 carbon atoms, an arylthio group, a phosphate group, and a phosphate ester group ( phosphate ester). For example, the substituted alkyl group may include a halogenalkyl group, a hydroxyalkyl group, an aminoalkyl group, an alkoxyalkyl group, or an alkaryl group, But is not limited thereto. The alkaryl group belongs to the substituted alkyl group having 1 to 20 carbon atoms, and it means that at least one hydrogen atom is substituted with an aryl group. For example, the aryl group substituting the at least one hydrogen atom may be a benzyl group (PhCH ₂ -), a benzhydryl group (Ph ₂ CH-), a trityl group (Ph ₃ C -, a phenylethyl group (Ph-CH ₂ CH ₂ -), a styryl group (PhCH═CH-), or a cinnamyl group (PhCH═CHCH ₂ -), But is not limited thereto.

In one embodiment of the invention, the alkyl group may be a substituted or unsubstituted linear or branched chain saturated radical and may be a substituted or unsubstituted linear chain saturated radical, For example, it may be an unsubstituted linear chain saturated radical, but is not limited thereto. For example, the alkyl group having 1 to 20 carbon atoms may be a substituted or unsubstituted, linear or branched chain saturated hydrocarbon radical, but is not limited thereto.

In one embodiment of the present invention, R &^lt; ¹ > through R &^lt; ⁹ & Each of which may be an aryl group, which is an aromatic group of substituted or unsubstituted monocyclic or bicylic group, which is an aryl group of 6 to 14 carbon atoms, preferably an aromatic group of 6 To about 10 carbon atoms. For example, the aryl group may include, but is not limited to, a phenyl group, a naphthyl group, an indenyl group, and an indanyl group.

In one embodiment of the present invention, the substituted aryl group may have 1, 2, or 3 substituents, but is not limited thereto. For example, when the aryl group is substituted, the substituted substituent may be one or more substituents selected from the group consisting of: unsubstituted alkyl groups having 1 to 6 carbon atoms (such as an aralkyl group, An alkyl group having 1 to 10 carbon atoms, a dialkylamino group having 1 to 10 carbon atoms, an arylamino group, a diarylamino group (which forms a group], an unsubstituted aryl group, a cyano group, an aryl group, an arylalkylamino group, an amino group, an amide group, a hydroxyl group, a halo group, a carboxyl group, an ester group, an acyl group, an acyloxy group, An alkoxy group of 1 to 20 carbon atoms, an aryloxy group, a haloalkyl group, a thiol group, an alkylthio group of 1 to 10 carbon atoms, an arylthio group ( arylthio group), sulfo A sulfonyl group, a phosphate group, and a phosphate ester group.

In one embodiment herein, the aryl group may be a heteroaryl group containing one or more heteroatoms. Such an aryl or heteroaryl group is a substituted or unsubstituted mono or bicyclic heterocyclic group and the aromatic group is a cyclic moiety comprising one or more heteroatoms, Lt; RTI ID = 0.0 > 6 < / RTI > to 10 atoms. For example, it may be a 5- or 6-parted ring containing at least one heteroatom selected from O, S, N, P, Se, and Si. For example, the heteroatom may include one, two, or three heteroatoms. For example, the heteroaryl group may be a pyridyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a furanyl group, a thienyl group A pyrazolidinyl group, a pyrrolyl group, an oxazolyl group, an oxadiazolyl group, an isoxazolyl group, a thiadiazolyl group, a thiadiazolyl group, May include a thiazolyl group, an isothiazolyl group, an imidazolyl group, a pyrazolyl group, a quinolyl group, and an isoquinolyl group, , But may not be limited thereto. For example, the heteroaryl group may be unsubstituted or substituted as previously described for the aryl group, and when substituted, the substituent may be, for example, 1, 2, or 3, .

In one embodiment of the present invention, each of R 1 and R 'in the above Chemical Formulas 1 to 3 additionally contains an alkali metal cation to the organic cation, that is, the organic cation and the alkali metal cation But is not limited thereto. In this case, the molar ratio of the alkali metal cations among the total cations of R and R 'in the above Chemical Formulas 1 to 3 may be more than 0 and not more than 0.2, but is not limited thereto. The alkali metal cations may include, but are not limited to, cations of metals selected from the group consisting of Cs, K, Rb, Mg, Ca, Sr, Ba, and combinations thereof.

In one embodiment herein, R and R 'may each independently be an alkylammonium cation or a formamidinium cation having 1 to 6 carbon atoms. For example, the R and R 'are each independently selected from the group consisting of methylammonium cation, ethylammonium cation, propylammonium cation, butylammonium cation, pentylammonium cation, hexylammonium cation, or formamidinium cation .

In one embodiment of the present invention, each of the above-mentioned formulas (1) to (3) independently has a value of 1 to 4, but the present invention is not limited thereto.

*

In one embodiment of the present invention, X independently represents a halide anion or a chalcogenide anion, but the present invention is not limited thereto. For example, X in the general formulas (1) to (3) may include one or two or more anions, for example, one or more halide anions or one or more chalcogenide anions, . ≪ / RTI > For example, In the formula 1 to formula 3 X is ^{F -, Cl -, Br -} , I -, S 2-, Se 2 -. Te ^{2 < -} >, and combinations thereof. However, the present invention is not limited thereto. For example, in Formula 1 to Formula 3, X is a monovalent halide anion, and includes at least one anion selected from the group consisting of F ^- , Cl ^- , Br ^- , I ^- , and combinations thereof. But may not be limited thereto. For example, in the above formulas (1) to (3), X is a bivalent chalcogenide anion, and S ^2- , Se ^{2 -} . Te ^{2 < -} >, and combinations thereof. However, the present invention is not limited thereto.

In one embodiment of the invention, the perovskite compound of Formula 1 is _{(CH 3 (CH 2) 3} NH 3) PbI 4 ( also known as _{"BAPbI 4"), (CH} 3 (CH 2) 3 NH 3 _{) (CH 3 NH 3) Pb} 2 I 7, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) 2 Pb 3 I 10, (CH 3 (CH 2) 3 NH 3) (CH 3 NH _{3) 3 Pb 4 I 13,} (CH 3 (CH 2) 3 NH 3) PbBr 4, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) Pb 2 Br 7, (CH 3 (CH 2 _{) 3 NH 3) (CH 3} NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) 3 Pb 4 Br 13, (CH 3 (CH 2) 3 NH 3 ) PbCl _{4 ,} (CH ₃ (CH ₂ ) ₃ NH ₃ ) (CH ₃ NH ₃ ) Pb ₂ Cl _{7 ,} (CH ₃ (CH ₂ ) ₃ NH ₃ ) (CH ₃ NH ₃ ) ₂ Pb ₃ Cl _{10, CH 3 (CH 2) 3 NH} 3) (CH 3 NH 3) 3 Pb 4 Cl 13, (CH 3 (CH 2) 3 NH 3) PbF 4, (CH 3 (CH 2) 3 NH 3) (CH 3 _{NH 3) Pb 2 F 7,} (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) 3 Pb _{4 F 13, (CH 3 (} CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 I 7, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) 2 Pb 3 _{I 10, (CH 3 (CH} 2) 3 NH 3) (CH 3 CH 2 NH 3) 3 Pb 4 I 13, (CH 3 (CH 2) 3 NH 3) (CH 3 _{CH 2 NH 3) Pb 2 Br} 7, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) (CH 3 CH _{2 NH 3) 3 Pb 4 Br} 13, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 Cl 7, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 _{NH 3) 2 Pb 3 Cl 10} , (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) 3 Pb 4 Cl 13, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 _{NH 3) Pb 2 F 7,} (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH ₃ ) ₃ Pb ₄ F ₁₃ , _{(CH 3 (CH 2) 3} NH 3) (CH 3 (CH 2) 2 NH 3) Pb 2 I 7, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 2 _{Pb 3 I 10, (CH 3} (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 3 Pb 4 I 13, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2 _{) 2 NH 3) Pb 2 Br} 7, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) ( _{CH 3 (CH 2) 2 NH} 3) 3 Pb 4 Br 13, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) Pb 2 Cl 7, (CH 3 (CH 2) _{3 NH 3) (CH 3 (} CH 2) 2 NH 3) 2 Pb 3 Cl 10, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 3 Pb 4 Cl 13, ( _{CH 3 (CH 2) 3 NH} 3) (CH 3 (CH 2) 2 NH 3) Pb 2 F 7, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 2 Pb ₃ F _{10 ,} and But is not limited to, one or more perovskite compounds selected from (CH ₃ (CH ₂ ) ₃ NH ₃ ) (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ F ₁₃ .

In one embodiment of the present invention, the perovskite compound of Formula 1 is (H ₂ N = CHNH ₂ ) PbI _4, (H ₂ N = CHNH ₂ ) (CH ₃ NH ₃ ) Pb ₂ I _{7 , 2 N = CHNH 2) (CH} 3 NH 3) 2 Pb 3 I 10, (H 2 N = CHNH 2) (CH 3 NH 3) 3 Pb 4 I 13, (H 2 N = CHNH 2) PbBr 4, ( _{H 2 N = CHNH 2) (} CH 3 NH 3) Pb 2 Br 7, (H 2 N = CHNH 2) (CH 3 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) (CH 3 NH _{3) 3 Pb 4 Br 13,} (H 2 N = CHNH 2) PbCl 4, (H 2 N = CHNH 2) (CH 3 NH 3) Pb 2 Cl 7, (H 2 N = CHNH 2) (CH 3 NH _{3) 2 Pb 3 Cl 10,} (H 2 N = CHNH 2) (CH 3 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) PbF 4, (H 2 N = CHNH 2) (CH 3 NH ₃ ) Pb ₂ F _{7 ,} (H ₂ N = CHNH ₂ ) (CH ₃ NH ₃ ) ₂ Pb ₃ F _{10 ,} (H ₂ N = CHNH ₂ ) (CH ₃ NH ₃ ) ₃ Pb ₄ F ₁₃ , _{2 N = CHNH 2) (CH} 3 CH 2 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) 2 Pb 3 I 10, (H 2 N = CHNH 2) ( _{CH 3 CH 2 NH 3) 3} Pb 4 I 13, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) Pb 2 Br 7, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) ₂ Pb ₃ Br _10, (H ₂ N = CHNH ₂ ) (CH ₃ CH ₂ NH ₃ ) ₃ Pb ₄ Br _{13 ,} (H ₂ N = CHNH ₂ ) (CH ₃ CH ₂ NH ₃ ) Pb ₂ Cl _7, H _{2 N = CHNH 2) (CH} 3 CH 2 NH 3) 2 Pb 3 Cl 10, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) _{(CH 3 CH 2 NH 3)} 2 PbF 7, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) 2 Pb 3 F 10, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) ₃ Pb ₄ F ₁₃ , _{(H 2 N = CHNH 2)} (CH 3 (CH 2) 2 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) 2 Pb 3 I 10, ( _{H 2 N = CHNH 2) (} CH 3 (CH 2) 2 NH 3) 3 Pb 4 I 13, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) Pb 2 Br 7, (H _{2 N = CHNH 2) (CH} 3 (CH 2) 2 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) 3 Pb 4 Br 13, (H _{2 N = CHNH 2) (CH} 3 (CH 2) 2 NH 3) Pb 2 Cl 7, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Cl 10, (H 2 _{N = CHNH 2) (CH 3} (CH 2) 2 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) Pb 2 F 7, (H 2 N _{= CHNH 2) (CH 3 (} CH 2) 2 NH 3) 2 Pb 3 F 10, and But is not limited to, one or more perovskite compounds selected from (H ₂ N = CHNH ₂ ) (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ F ₁₃ .

In one embodiment of the invention, a perovskite compound of the formula (II) _{(CH 3 (CH 2) 3} NH 3) (CH 3 NH 3) Pb 2 I 6, (CH 3 (CH 2) 3 NH 3 _{) (CH 3 NH 3) Pb} 2 Br 6, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) Pb 2 Cl 6, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3 _{) Pb 2 F 6, (CH} 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 I 6, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb _{2 Br 6, (CH 3 (} CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 Cl 6, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 F _{6, (CH 3 (CH 2} ) 3 NH 3) (CH 3 (CH 2) 2 NH 3) Pb 2 I 6, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3 _{) Pb 2 Br 6, (CH} 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) Pb 2 Cl 6, and _{(CH 3 (CH 2) 3} NH 3) (CH 3 (CH ₂ ) ₂ NH ₃ ) Pb ₂ F ₆ , and may be, but not limited to, one or more perovskite compounds.

In one embodiment of the present application, the (H ₂ N = CHNH ₂₎ a perovskite compound of the formula _{2 (CH 3 NH 3) Pb} 2 I 6, (H 2 N = CHNH 2) (CH 3 NH 3 _{) Pb 2 Br 6, (H} 2 N = CHNH 2) (CH 3 NH 3) Pb 2 Cl 6, (H 2 N = CHNH 2) (CH 3 NH 3) Pb 2 F 6, (H 2 N = CHNH _{2) (CH 3 CH 2 NH} 3) Pb 2 I 6, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) Pb 2 Br 6, (H 2 N = CHNH 2) (CH 3 CH 2 NH _{3) Pb 2 Cl 6, (} H 2 N = CHNH 2) (CH 3 CH 2 NH 3) Pb 2 F 6, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) Pb 2 I _{6, (H 2 N = CHNH} 2) (CH 3 (CH 2) 2 NH 3) Pb 2 Br 6, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) Pb 2 Cl 6, But may be, but not limited to, one or more perovskite compounds selected from (H ₂ N = CHNH ₂ ) (CH ₃ (CH ₂ ) ₂ NH ₃ ) Pb ₂ F ₆ .

For example, the perovskite compound of Formula 3 is (CH ₃ (CH ₂ ) ₃ NH ₃ ) ₂ PbI ₄ (Also referred to as _{"BA 2 PbI 4"),} (CH 3 (CH 2) 3 NH 3) 2 PbBr 4, (CH 3 (CH 2) 3 NH 3) 2 PbCl 4, (CH 3 (CH 2) 3 NH _{3) 2 PbF 4, (CH} 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) Pb 2 I 7 ( also referred to as _{"BA 2 MAPb 2 I 7"} ), (CH 3 (CH 2) 3 NH _{3) 2 (CH 3 NH 3} ) Pb 2 Br 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) Pb 2 Cl 7, (CH 3 (CH 2) 3 NH 3) 2 ( CH ₃ NH ₃ ) Pb ₂ F _{7 ,} (CH ₃ (CH ₂ ) ₃ NH ₃ ) ₂ (CH ₃ NH ₃ ) ₂ Pb ₃ I ₁₀ ("BA ₂ MA ₂ Pb ₃ I ₁₀ " ), _{(CH 3 (CH 2) 3} NH 3) 2 (CH 3 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) 2 Pb 3 Cl 10, (CH _{3 (CH 2) 3 NH 3} ) 2 (CH 3 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) 3 Pb 4 I 13 (&Quot; BA ₂ MA ₃ Pb ₄ I ₁₃ " Also known _{as), (CH 3 (CH 2} ) 3 NH 3) 2 (CH 3 NH 3) 3 Pb 4 Br 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) 3 Pb 4 Cl _{13, (CH 3 (CH 2} ) 3 NH 3) 2 (CH 3 NH 3) 3 Pb 4 F 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) Pb 2 I 7 _{, (CH 3 (CH 2)} 3 NH 3) 2 (CH 3 CH 2 NH 3) Pb 2 Br 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) Pb 2 Cl 7 _{, (CH 3 (CH 2)} 3 NH 3) 2 (CH 3 CH 2 NH 3) Pb 2 F 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 2 Pb 3 I ₁₀ , _{(CH 3 (CH 2) 3} NH 3) 2 (CH 3 CH 2 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 2 Pb 3 Cl _{10, (CH 3 (CH 2} ) 3 NH 3) 2 (CH 3 CH 2 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 3 Pb _{4 I 13, (CH 3 (} CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 3 Pb 4 Br 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) _{3 Pb 4 Cl 13, (CH} 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 3 Pb 4 F 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2 _{) 2 NH 3) Pb 2 I} 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH 3) Pb 2 Br 7, (CH 3 (CH 2) 3 NH 3) 2 _{(CH 3 (CH 2) 2} NH 3) Pb 2 Cl 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH 3) Pb 2 F 7, (CH 3 (CH 2 ) ₃ NH ₃ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₂ Pb ₃ I ₁₀ , _{(CH 3 (CH 2) 3} NH 3) 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH _{3) 2 Pb 3 Cl 10,} (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) 2 ( _{CH 3 (CH 2) 2 NH} 3) 3 Pb 4 I 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH 3) 3 Pb 4 Br 13, (CH 3 (CH ₂ ) ₃ NH ₃ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ Cl _{13 ,} and But may be, but not limited to, one or more perovskite compounds selected from (CH ₃ (CH ₂ ) ₃ NH ₃ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ F ₁₃ .

For example, a perovskite compound of the formula (3) _{(H 2 N = CHNH 2)} 2 PbI 4, (H 2 N = CHNH 2) 2 PbBr 4, (H 2 N = CHNH 2) 2 PbCl 4, _{(H 2 N = CHNH 2)} 2 PbF 4, (H 2 N = CHNH 2) 2 (CH 3 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) 2 (CH 3 NH 3) Pb 2 Br _{7, (H 2 N = CHNH} 2) 2 (CH 3 NH 3) Pb 2 Cl 7, (H 2 N = CHNH 2) 2 (CH 3 NH 3) Pb 2 F 7, (H 2 N = CHNH 2) _{2 (CH 3 NH 3) 2} Pb 3 I 10, _{(H 2 N = CHNH 2)} 2 (CH 3 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) 2 (CH 3 NH 3) 2 Pb 3 Cl 10, (H 2 N = CHNH 2) _{2 (CH 3 NH 3) 2} Pb 3 F 10, (H 2 N = CHNH 2) 2 (CH 3 NH 3) 3 Pb 4 I 13, (H 2 N = CHNH 2) 2 (CH 3 NH 3) 3 _{Pb 4 Br 13, (H 2} N = CHNH 2) 2 (CH 3 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) 2 (CH 3 NH 3) 3 Pb 4 F 13, (H 2 _{N = CHNH 2) 2 (CH} 3 CH 2 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) Pb 2 Br 7, (H 2 N = CHNH 2) 2 _{(CH 3 CH 2 NH 3)} Pb 2 Cl 7, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) Pb 2 F 7, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH ₃ ) ₂ Pb ₃ I ₁₀ , _{(H 2 N = CHNH 2)} 2 (CH 3 CH 2 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) 2 Pb 3 Cl 10, (H 2 N _{= CHNH 2) 2 (CH 3} CH 2 NH 3) 2 Pb 3 F 10, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) 3 Pb 4 I 13, (H 2 N = CHNH 2) _{2 (CH 3 CH 2 NH 3} ) 3 Pb 4 Br 13, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) 2 (CH 3 _{CH 2 NH 3) 3 Pb 4} F 13, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) 2 (CH 3 (CH _{2) 2 NH 3) Pb 2} Br 7, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) Pb 2 Cl 7, (H 2 N = CHNH 2) 2 (CH 3 (CH ₂ ) ₂ NH ₃ ) Pb ₂ F _7, (H ₂ N = CHNH ₂ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₂ Pb ₃ I ₁₀ , _{(H 2 N = CHNH 2)} 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Cl _{10, (H 2 N = CHNH} 2) 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 F 10, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) 3 Pb _{4 I 13, (H 2 N} = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) 3 Pb 4 Br 13, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) ₃ Pb ₄ Cl _{13 ,} and But may be, but not limited to, one or more perovskite compounds selected from (H ₂ N = CHNH ₂ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ F ₁₃ .

In one embodiment of the present invention, the first electrode 300 and the second electrode 100 are not particularly limited as long as they are conductive substrates. For example, selected from the group consisting of indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga ₂ O ₃ , ZnO-Al ₂ O ₃ , tin oxide, zinc oxide, But is not limited to, a glass substrate or a plastic substrate containing a material that is a material for the substrate, or a conductive polymer such as Pt, Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, . But are not limited to, those selected from the group consisting of, for example, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polypropylene, polyimide, triacetylcellulose, and combinations thereof . For example, the conductive substrate may include, but is not limited to, being doped with a metal selected from the group consisting of Group 3 metals, such as Al, Ga, In, Ti, and combinations thereof .

In one embodiment of the present invention, the first electrode and the second electrode may be the same or different. In addition, the two electrodes may be placed approximately parallel, but are not limited thereto. However, the orientation angle between the two electrodes may be different, but the second electrode is approximately perpendicular to the first electrode in its orientation. The two layers may form a lattice or a crossbar, but are not limited thereto.

1, the first electrode and the second electrode are shown having a rectangular cross-section, but the two electrodes may be triangular, trapezoidal, rhombic, pentagonal, hexagonal, circular, or elliptical And may have the same other cross-sectional shape. However, the present invention is not limited thereto.

In one embodiment of the invention, there is at least one intermediate layer positioned between the first electrode and the second electrode and formed of a metallic material, and at least one intermediate layer positioned between the at least one intermediate layer and the second electrode But is not limited to, a second switching layer containing a layered organic-inorganic composite perovskite. More specifically, the intermediate layer is located between the switching layers, and the switching layers are located between the first electrode and the second electrode. The intermediate layer may use the same material as the first electrode, but is not limited thereto.

In one embodiment of the invention, the memristor may be implemented as a crossbar array formed of a plurality of memristors. This is an array of memristors that can connect each wire in a set of parallel wires of a memristor to all memristors of a second set of parallel wires that intersect the first set, But it is not limited thereto.

According to a second aspect of the present invention, there is provided a method comprising: forming a first electrode; Forming a switching layer containing a layered organic / inorganic composite perovskite or a layered organic / inorganic composite perovskite on the first electrode; And a step of forming a second electrode in a layer containing the layered organic / inorganic composite perovskite or a switching layer containing the layered organic / inorganic composite perovskite.

Although a detailed description of the parts overlapping with the first aspect of the present application is omitted, the description of the first aspect of the present application may be applied to the second aspect of the present invention.

1, the memristor includes a first electrode 100, a second electrode 300, and a layer containing an organic-inorganic complexed perovskite interposed therebetween, Or a transition layer 200 containing an organic or inorganic complex perovskite.

In one embodiment of the present invention, the switching layer refers to a layer in which resistance changes, and may be applied to switching driving by varying resistance depending on the magnitude and direction of a voltage. Specifically, the resistance variable layer may be formed in a high resistance state (HRS) or a high resistance state by a change in an energy distribution, a structural change, or an oxidation-reduction reaction of ions existing in the resistance variable layer due to movement of ions or defects in the electric field. The low resistance state (LRS) can be maintained so that switching in the layer is drivable from the combined motion of electrons and ions in the material by the voltage.

In one embodiment of the present invention, the layer containing the layered organic / inorganic composite perovskite or the switching layer containing the layered organic / inorganic composite perovskite forms a conduction channel during operation of the memristor, - < / RTI > determining the off state.

In one embodiment of the present application, the layered organic-inorganic composite perovskite may include a perovskite structure satisfying the following formulas, wherein R, R ', and M are each a cation, X Is an anion. However, it is not limited thereto:

(1) a Dion-Jacobson structure in which R is included between n R'MX ₃ structures: R [R ' _n-1 M _n X _{3n + 1} ]; (2) Double perovskite structure consisting of alternating R cation and R 'cation: RR'M ₂ X ₆ ; (3) Ruddlesden-Popper structure in which R (mainly a cation larger than R ') is formed by replacing R' for every n R'MX ₃ structures: R ₂ R ^' _{n - 1} M _n X _{3n +1} ; Or (4) Bi ₂ O ₂ are n ABX Aurivillius structure into each between the structure _{3, Bi 2 O 2 [R n} - 1 M n X 3n +1].

In one embodiment of the present invention, the layered organic-inorganic composite perovskite may include an inorganic or organic perovskite material represented by any one of the following Chemical Formulas 1 to 3:

[Chemical Formula 1]

RR ' _{n - 1} M _n X _{3n +1} ;

(2)

RR'M ₂ X ₆ ;

(3)

R ₂ R ' _{n - 1} M _n X _{3n +1} ;

In Formula 1 to Formula 3, each independently, n is number greater than or equal to 1, M is Cu ^{2 +,} Ni ^{2 +,} Co ^{2 +,} Fe ^{2 +,} Mn ^{2 +,} Cr ^{2 +,} Pd ^{2 +, Cd 2 +, Yb 2 +,} Pb 2 +, Sn 2 +, Ge 2 +, Bi 3 +, Sb 3+, and comprises a cation of a metal selected from the group consisting of and combinations thereof, R and R 'Lt; / RTI > are each independently an organic cation and X comprises an anion.

In one embodiment of the present invention, each of R ¹ and R 'in the above Chemical Formulas 1 to 3 independently represents a monovalent organic group represented by (R ¹ R ² R ³ R ⁴ N) ⁺ Ammonium cation. For example, each of R ¹ to R ⁴ independently represents hydrogen, a substituted or unsubstituted linear or branched alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, An aryl group having 6 to 20 carbon atoms which is unsubstituted, a substituted or unsubstituted heteroaryl group having 5 to 20 carbon atoms, and combinations thereof.

In one embodiment of the present invention, each of R 1 and R 'in the above Chemical Formulas 1 to 3 independently represents a monovalent organic ammonium ion represented by (R ⁵ -NH ₃ ) ⁺ have. For example, R ⁵ is hydrogen, a substituted or unsubstituted linear or branched alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms A substituted or unsubstituted aryloxy group, a substituted or unsubstituted heteroaryl group having 5 to 20 carbon atoms, and combinations thereof.

In one embodiment of the present invention, each of R 1 and R 'independently represents a group represented by the formula (R ⁶ R ⁷ N═CH-NR ⁸ R ⁹ ) ⁺ Lt; / RTI > can be a monovalent formamidinium cation. For example, each of R ⁶ to R ⁹ independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, But are not limited to, those selected from the group consisting of, and combinations thereof.

In one embodiment of the present application, R ¹ to R ⁹ each independently may be an alkyl group, and may contain 1 to 24 carbon atoms, 1 to 20 carbon atoms, 1 to 15 carbon atoms, 1 But is not limited to, a linear or branched alkyl group having from 1 to 10 carbon atoms, from 1 to 8 carbon atoms, from 1 to 5 carbon atoms, or from 1 to 3 carbon atoms. For example, the linear or branched alkyl group may be a linear or branched alkyl group having 1 to 20 carbon atoms such as methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, But are not limited to, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosanyl, or all possible isomers thereof.

In one embodiment of the present invention, the substituent on the alkyl group may be 1, 2, or 3, but is not limited thereto. For example, the substituent which may be substituted on the alkyl group may be a halogen group (e.g. F, Cl, Br, or I), a haloalkyl group (e.g., CC1 ₃ or CF ₃ ), an alkoxy group, (-C (O) -OR), an alkylcarbonyloxy group (-OC (O) -R), an amino group (-NH ₂ ), a carboxy group But are not limited to, a bamoyl group (-C (O) -NHR), urea (-NH-C (O) -NHR-) and a thiol group (-SH).

In one embodiment of the present invention, the alkyl group having at least 2 carbon atoms in the alkyl group may include at least one carbon to carbon double bond or at least one carbon to carbon triple bond, but is not limited thereto.

In one embodiment of the present invention, when the alkyl group is substituted, the substituent on the alkyl group may be one or more substituents selected from the following substituents, but is not limited thereto: substituted or unsubstituted C1 to C20 A substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a cyano group, an amino group, an alkylamino group having 1 to 10 carbon atoms, a dialkylamino group having 1 to 10 carbon atoms, an arylamino group, An amino group, an amide group, a hydroxyl group, an oxo group, a halo group, a carboxyl group, an amino group, an amino group, an amino group, a diarylamino group, an arylalkylamino group, a carboxyl group, an ester group, an acyl group, an acyloxy group, an alkoxy group having 1 to 20 carbon atoms, an aryloxy group, a haloalkyl group (e.g., haloa a sulfonyl group, a thiol group, an alkylthio group having 1 to 10 carbon atoms, an arylthio group, a phosphate group, and a phosphate ester group ( phosphate ester). For example, the substituted alkyl group may include a halogenalkyl group, a hydroxyalkyl group, an aminoalkyl group, an alkoxyalkyl group, or an alkaryl group, But is not limited thereto. The alkaryl group belongs to the substituted alkyl group having 1 to 20 carbon atoms, and it means that at least one hydrogen atom is substituted with an aryl group. For example, the aryl group substituting the at least one hydrogen atom may be a benzyl group (PhCH ₂ -), a benzhydryl group (Ph ₂ CH-), a trityl group (Ph ₃ C -, a phenylethyl group (Ph-CH ₂ CH ₂ -), a styryl group (PhCH═CH-), or a cinnamyl group (PhCH═CHCH ₂ -), But is not limited thereto.

In one embodiment of the invention, the alkyl group may be a substituted or unsubstituted linear or branched chain saturated radical and may be a substituted or unsubstituted linear chain saturated radical, For example, it may be an unsubstituted linear chain saturated radical, but is not limited thereto. For example, the alkyl group having 1 to 20 carbon atoms may be a substituted or unsubstituted, linear or branched chain saturated hydrocarbon radical, but is not limited thereto.

In one embodiment of the present invention, R &^lt; ¹ > through R &^lt; ⁹ & Each of which may be an aryl group, which is an aromatic group of substituted or unsubstituted monocyclic or bicylic group, which is an aryl group of 6 to 14 carbon atoms, preferably an aromatic group of 6 To about 10 carbon atoms. For example, the aryl group may include, but is not limited to, a phenyl group, a naphthyl group, an indenyl group, and an indanyl group.

In one embodiment of the present invention, the substituted aryl group may have 1, 2, or 3 substituents, but is not limited thereto. For example, when the aryl group is substituted, the substituted substituent may be one or more substituents selected from the group consisting of: unsubstituted alkyl groups having 1 to 6 carbon atoms (such as an aralkyl group, An alkyl group having 1 to 10 carbon atoms, a dialkylamino group having 1 to 10 carbon atoms, an arylamino group, a diarylamino group (which forms a group], an unsubstituted aryl group, a cyano group, an aryl group, an arylalkylamino group, an amino group, an amide group, a hydroxyl group, a halo group, a carboxyl group, an ester group, an acyl group, an acyloxy group, An alkoxy group of 1 to 20 carbon atoms, an aryloxy group, a haloalkyl group, a thiol group, an alkylthio group of 1 to 10 carbon atoms, an arylthio group ( arylthio group), sulfo A sulfonyl group, a phosphate group, and a phosphate ester group.

In one embodiment herein, the aryl group may be a heteroaryl group containing one or more heteroatoms. Such an aryl or heteroaryl group is a substituted or unsubstituted mono or bicyclic heterocyclic group which is a cyclic moiety comprising one or more heteroatoms, Lt; RTI ID = 0.0 > 6 < / RTI > to 10 atoms. For example, it may be a 5- or 6-parted ring containing at least one heteroatom selected from O, S, N, P, Se, and Si. For example, the heteroatom may include one, two, or three heteroatoms. For example, the heteroaryl group may be a pyridyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a furanyl group, a thienyl group A pyrazolidinyl group, a pyrrolyl group, an oxazolyl group, an oxadiazolyl group, an isoxazolyl group, a thiadiazolyl group, a thiadiazolyl group, May include a thiazolyl group, an isothiazolyl group, an imidazolyl group, a pyrazolyl group, a quinolyl group, and an isoquinolyl group, , But may not be limited thereto. For example, the heteroaryl group may be unsubstituted or substituted as previously described for the aryl group, and when substituted, the substituent may be, for example, 1, 2, or 3, .

In one embodiment of the present invention, each of R 1 and R 'in the above Chemical Formulas 1 to 3 additionally contains an alkali metal cation to the organic cation, that is, the organic cation and the alkali metal cation But is not limited thereto. In this case, the molar ratio of the alkali metal cations among the total cations of R and R 'in the above Chemical Formulas 1 to 3 may be more than 0 and not more than 0.2, but is not limited thereto. The alkali metal cations may include, but are not limited to, cations of metals selected from the group consisting of Cs, K, Rb, Mg, Ca, Sr, Ba, and combinations thereof.

In one embodiment herein, R and R 'may each independently be an alkylammonium cation or a formamidinium cation having 1 to 6 carbon atoms. For example, the R and R 'are each independently selected from the group consisting of methylammonium cation, ethylammonium cation, propylammonium cation, butylammonium cation, pentylammonium cation, hexylammonium cation, or formamidinium cation .

In one embodiment of the present invention, each of the above-mentioned formulas (1) to (3) independently has a value of 1 to 4, but the present invention is not limited thereto.

*

In one embodiment of the present invention, X independently represents a halide anion or a chalcogenide anion, but the present invention is not limited thereto. For example, X in the general formulas (1) to (3) may include one or two or more anions, for example, one or more halide anions or one or more chalcogenide anions, . ≪ / RTI > For example, In the formula 1 to formula 3 X is ^{F -, Cl -, Br -} , I -, S 2-, Se 2 -. Te ^{2 < -} >, and combinations thereof. However, the present invention is not limited thereto. For example, in Formula 1 to Formula 3, X is a monovalent halide anion, and includes at least one anion selected from the group consisting of F ^- , Cl ^- , Br ^- , I ^- , and combinations thereof. But may not be limited thereto. For example, in the above formulas (1) to (3), X is a bivalent chalcogenide anion, and S ^2- , Se ^{2 -} . Te ^{2 < -} >, and combinations thereof. However, the present invention is not limited thereto.

In one embodiment of the invention, the perovskite compound of Formula 1 is _{(CH 3 (CH 2) 3} NH 3) PbI 4 ( also known as _{"BAPbI 4"), (CH} 3 (CH 2) 3 NH 3 _{) (CH 3 NH 3) Pb} 2 I 7, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) 2 Pb 3 I 10, (CH 3 (CH 2) 3 NH 3) (CH 3 NH _{3) 3 Pb 4 I 13,} (CH 3 (CH 2) 3 NH 3) PbBr 4, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) Pb 2 Br 7, (CH 3 (CH 2 _{) 3 NH 3) (CH 3} NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) 3 Pb 4 Br 13, (CH 3 (CH 2) 3 NH 3 ) PbCl _{4 ,} (CH ₃ (CH ₂ ) ₃ NH ₃ ) (CH ₃ NH ₃ ) Pb ₂ Cl _{7 ,} (CH ₃ (CH ₂ ) ₃ NH ₃ ) (CH ₃ NH ₃ ) ₂ Pb ₃ Cl _{10, CH 3 (CH 2) 3 NH} 3) (CH 3 NH 3) 3 Pb 4 Cl 13, (CH 3 (CH 2) 3 NH 3) PbF 4, (CH 3 (CH 2) 3 NH 3) (CH 3 _{NH 3) Pb 2 F 7,} (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) 3 Pb _{4 F 13, (CH 3 (} CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 I 7, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) 2 Pb 3 _{I 10, (CH 3 (CH} 2) 3 NH 3) (CH 3 CH 2 NH 3) 3 Pb 4 I 13, (CH 3 (CH 2) 3 NH 3) (CH 3 _{CH 2 NH 3) Pb 2 Br} 7, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) (CH 3 CH _{2 NH 3) 3 Pb 4 Br} 13, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 Cl 7, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 _{NH 3) 2 Pb 3 Cl 10} , (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) 3 Pb 4 Cl 13, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 _{NH 3) Pb 2 F 7,} (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH ₃ ) ₃ Pb ₄ F ₁₃ , _{(CH 3 (CH 2) 3} NH 3) (CH 3 (CH 2) 2 NH 3) Pb 2 I 7, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 2 _{Pb 3 I 10, (CH 3} (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 3 Pb 4 I 13, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2 _{) 2 NH 3) Pb 2 Br} 7, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) ( _{CH 3 (CH 2) 2 NH} 3) 3 Pb 4 Br 13, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) Pb 2 Cl 7, (CH 3 (CH 2) _{3 NH 3) (CH 3 (} CH 2) 2 NH 3) 2 Pb 3 Cl 10, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 3 Pb 4 Cl 13, ( _{CH 3 (CH 2) 3 NH} 3) (CH 3 (CH 2) 2 NH 3) Pb 2 F 7, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) 2 Pb ₃ F _{10 ,} and But is not limited to, one or more perovskite compounds selected from (CH ₃ (CH ₂ ) ₃ NH ₃ ) (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ F ₁₃ .

In one embodiment of the present invention, the perovskite compound of Formula 1 is (H ₂ N = CHNH ₂ ) PbI _4, (H ₂ N = CHNH ₂ ) (CH ₃ NH ₃ ) Pb ₂ I _{7 , 2 N = CHNH 2) (CH} 3 NH 3) 2 Pb 3 I 10, (H 2 N = CHNH 2) (CH 3 NH 3) 3 Pb 4 I 13, (H 2 N = CHNH 2) PbBr 4, ( _{H 2 N = CHNH 2) (} CH 3 NH 3) Pb 2 Br 7, (H 2 N = CHNH 2) (CH 3 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) (CH 3 NH _{3) 3 Pb 4 Br 13,} (H 2 N = CHNH 2) PbCl 4, (H 2 N = CHNH 2) (CH 3 NH 3) Pb 2 Cl 7, (H 2 N = CHNH 2) (CH 3 NH _{3) 2 Pb 3 Cl 10,} (H 2 N = CHNH 2) (CH 3 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) PbF 4, (H 2 N = CHNH 2) (CH 3 NH ₃ ) Pb ₂ F _{7 ,} (H ₂ N = CHNH ₂ ) (CH ₃ NH ₃ ) ₂ Pb ₃ F _{10 ,} (H ₂ N = CHNH ₂ ) (CH ₃ NH ₃ ) ₃ Pb ₄ F ₁₃ , _{2 N = CHNH 2) (CH} 3 CH 2 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) 2 Pb 3 I 10, (H 2 N = CHNH 2) ( _{CH 3 CH 2 NH 3) 3} Pb 4 I 13, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) Pb 2 Br 7, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) ₂ Pb ₃ Br _10, (H ₂ N = CHNH ₂ ) (CH ₃ CH ₂ NH ₃ ) ₃ Pb ₄ Br _{13 ,} (H ₂ N = CHNH ₂ ) (CH ₃ CH ₂ NH ₃ ) Pb ₂ Cl _7, H _{2 N = CHNH 2) (CH} 3 CH 2 NH 3) 2 Pb 3 Cl 10, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) _{(CH 3 CH 2 NH 3)} 2 PbF 7, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) 2 Pb 3 F 10, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) ₃ Pb ₄ F ₁₃ , _{(H 2 N = CHNH 2)} (CH 3 (CH 2) 2 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) 2 Pb 3 I 10, ( _{H 2 N = CHNH 2) (} CH 3 (CH 2) 2 NH 3) 3 Pb 4 I 13, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) Pb 2 Br 7, (H _{2 N = CHNH 2) (CH} 3 (CH 2) 2 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) 3 Pb 4 Br 13, (H _{2 N = CHNH 2) (CH} 3 (CH 2) 2 NH 3) Pb 2 Cl 7, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Cl 10, (H 2 _{N = CHNH 2) (CH 3} (CH 2) 2 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) Pb 2 F 7, (H 2 N _{= CHNH 2) (CH 3 (} CH 2) 2 NH 3) 2 Pb 3 F 10, and But is not limited to, one or more perovskite compounds selected from (H ₂ N = CHNH ₂ ) (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ F ₁₃ .

In one embodiment of the invention, a perovskite compound of the formula (II) _{(CH 3 (CH 2) 3} NH 3) (CH 3 NH 3) Pb 2 I 6, (CH 3 (CH 2) 3 NH 3 _{) (CH 3 NH 3) Pb} 2 Br 6, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3) Pb 2 Cl 6, (CH 3 (CH 2) 3 NH 3) (CH 3 NH 3 _{) Pb 2 F 6, (CH} 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 I 6, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb _{2 Br 6, (CH 3 (} CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 Cl 6, (CH 3 (CH 2) 3 NH 3) (CH 3 CH 2 NH 3) Pb 2 F _{6, (CH 3 (CH 2} ) 3 NH 3) (CH 3 (CH 2) 2 NH 3) Pb 2 I 6, (CH 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3 _{) Pb 2 Br 6, (CH} 3 (CH 2) 3 NH 3) (CH 3 (CH 2) 2 NH 3) Pb 2 Cl 6, and _{(CH 3 (CH 2) 3} NH 3) (CH 3 (CH ₂ ) ₂ NH ₃ ) Pb ₂ F ₆ , and may be, but not limited to, one or more perovskite compounds.

In one embodiment of the present application, the (H ₂ N = CHNH ₂₎ a perovskite compound of the formula _{2 (CH 3 NH 3) Pb} 2 I 6, (H 2 N = CHNH 2) (CH 3 NH 3 _{) Pb 2 Br 6, (H} 2 N = CHNH 2) (CH 3 NH 3) Pb 2 Cl 6, (H 2 N = CHNH 2) (CH 3 NH 3) Pb 2 F 6, (H 2 N = CHNH _{2) (CH 3 CH 2 NH} 3) Pb 2 I 6, (H 2 N = CHNH 2) (CH 3 CH 2 NH 3) Pb 2 Br 6, (H 2 N = CHNH 2) (CH 3 CH 2 NH _{3) Pb 2 Cl 6, (} H 2 N = CHNH 2) (CH 3 CH 2 NH 3) Pb 2 F 6, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) Pb 2 I _{6, (H 2 N = CHNH} 2) (CH 3 (CH 2) 2 NH 3) Pb 2 Br 6, (H 2 N = CHNH 2) (CH 3 (CH 2) 2 NH 3) Pb 2 Cl 6, But may be, but not limited to, one or more perovskite compounds selected from (H ₂ N = CHNH ₂ ) (CH ₃ (CH ₂ ) ₂ NH ₃ ) Pb ₂ F ₆ .

For example, the perovskite compound of Formula 3 is (CH ₃ (CH ₂ ) ₃ NH ₃ ) ₂ PbI ₄ (Also referred to as _{"BA 2 PbI 4"),} (CH 3 (CH 2) 3 NH 3) 2 PbBr 4, (CH 3 (CH 2) 3 NH 3) 2 PbCl 4, (CH 3 (CH 2) 3 NH _{3) 2 PbF 4, (CH} 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) Pb 2 I 7 ( also referred to as _{"BA 2 MAPb 2 I 7"} ), (CH 3 (CH 2) 3 NH _{3) 2 (CH 3 NH 3} ) Pb 2 Br 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) Pb 2 Cl 7, (CH 3 (CH 2) 3 NH 3) 2 ( CH ₃ NH ₃ ) Pb ₂ F _{7 ,} (CH ₃ (CH ₂ ) ₃ NH ₃ ) ₂ (CH ₃ NH ₃ ) ₂ Pb ₃ I ₁₀ ("BA ₂ MA ₂ Pb ₃ I ₁₀ " ), _{(CH 3 (CH 2) 3} NH 3) 2 (CH 3 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) 2 Pb 3 Cl 10, (CH _{3 (CH 2) 3 NH 3} ) 2 (CH 3 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) 3 Pb 4 I 13 (&Quot; BA ₂ MA ₃ Pb ₄ I ₁₃ " Also known _{as), (CH 3 (CH 2} ) 3 NH 3) 2 (CH 3 NH 3) 3 Pb 4 Br 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 NH 3) 3 Pb 4 Cl _{13, (CH 3 (CH 2} ) 3 NH 3) 2 (CH 3 NH 3) 3 Pb 4 F 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) Pb 2 I 7 _{, (CH 3 (CH 2)} 3 NH 3) 2 (CH 3 CH 2 NH 3) Pb 2 Br 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) Pb 2 Cl 7 _{, (CH 3 (CH 2)} 3 NH 3) 2 (CH 3 CH 2 NH 3) Pb 2 F 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 2 Pb 3 I ₁₀ , _{(CH 3 (CH 2) 3} NH 3) 2 (CH 3 CH 2 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 2 Pb 3 Cl _{10, (CH 3 (CH 2} ) 3 NH 3) 2 (CH 3 CH 2 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 3 Pb _{4 I 13, (CH 3 (} CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 3 Pb 4 Br 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) _{3 Pb 4 Cl 13, (CH} 3 (CH 2) 3 NH 3) 2 (CH 3 CH 2 NH 3) 3 Pb 4 F 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2 _{) 2 NH 3) Pb 2 I} 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH 3) Pb 2 Br 7, (CH 3 (CH 2) 3 NH 3) 2 _{(CH 3 (CH 2) 2} NH 3) Pb 2 Cl 7, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH 3) Pb 2 F 7, (CH 3 (CH 2 ) ₃ NH ₃ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₂ Pb ₃ I ₁₀ , _{(CH 3 (CH 2) 3} NH 3) 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Br 10, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH _{3) 2 Pb 3 Cl 10,} (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 F 10, (CH 3 (CH 2) 3 NH 3) 2 ( _{CH 3 (CH 2) 2 NH} 3) 3 Pb 4 I 13, (CH 3 (CH 2) 3 NH 3) 2 (CH 3 (CH 2) 2 NH 3) 3 Pb 4 Br 13, (CH 3 (CH ₂ ) ₃ NH ₃ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ Cl _{13 ,} and But may be, but not limited to, one or more perovskite compounds selected from (CH ₃ (CH ₂ ) ₃ NH ₃ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ F ₁₃ .

For example, a perovskite compound of the formula (3) _{(H 2 N = CHNH 2)} 2 PbI 4, (H 2 N = CHNH 2) 2 PbBr 4, (H 2 N = CHNH 2) 2 PbCl 4, _{(H 2 N = CHNH 2)} 2 PbF 4, (H 2 N = CHNH 2) 2 (CH 3 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) 2 (CH 3 NH 3) Pb 2 Br _{7, (H 2 N = CHNH} 2) 2 (CH 3 NH 3) Pb 2 Cl 7, (H 2 N = CHNH 2) 2 (CH 3 NH 3) Pb 2 F 7, (H 2 N = CHNH 2) _{2 (CH 3 NH 3) 2} Pb 3 I 10, _{(H 2 N = CHNH 2)} 2 (CH 3 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) 2 (CH 3 NH 3) 2 Pb 3 Cl 10, (H 2 N = CHNH 2) _{2 (CH 3 NH 3) 2} Pb 3 F 10, (H 2 N = CHNH 2) 2 (CH 3 NH 3) 3 Pb 4 I 13, (H 2 N = CHNH 2) 2 (CH 3 NH 3) 3 _{Pb 4 Br 13, (H 2} N = CHNH 2) 2 (CH 3 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) 2 (CH 3 NH 3) 3 Pb 4 F 13, (H 2 _{N = CHNH 2) 2 (CH} 3 CH 2 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) Pb 2 Br 7, (H 2 N = CHNH 2) 2 _{(CH 3 CH 2 NH 3)} Pb 2 Cl 7, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) Pb 2 F 7, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH ₃ ) ₂ Pb ₃ I ₁₀ , _{(H 2 N = CHNH 2)} 2 (CH 3 CH 2 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) 2 Pb 3 Cl 10, (H 2 N _{= CHNH 2) 2 (CH 3} CH 2 NH 3) 2 Pb 3 F 10, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) 3 Pb 4 I 13, (H 2 N = CHNH 2) _{2 (CH 3 CH 2 NH 3} ) 3 Pb 4 Br 13, (H 2 N = CHNH 2) 2 (CH 3 CH 2 NH 3) 3 Pb 4 Cl 13, (H 2 N = CHNH 2) 2 (CH 3 _{CH 2 NH 3) 3 Pb 4} F 13, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) Pb 2 I 7, (H 2 N = CHNH 2) 2 (CH 3 (CH _{2) 2 NH 3) Pb 2} Br 7, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) Pb 2 Cl 7, (H 2 N = CHNH 2) 2 (CH 3 (CH ₂ ) ₂ NH ₃ ) Pb ₂ F _7, (H ₂ N = CHNH ₂ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₂ Pb ₃ I ₁₀ , _{(H 2 N = CHNH 2)} 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Br 10, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 Cl _{10, (H 2 N = CHNH} 2) 2 (CH 3 (CH 2) 2 NH 3) 2 Pb 3 F 10, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) 3 Pb _{4 I 13, (H 2 N} = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) 3 Pb 4 Br 13, (H 2 N = CHNH 2) 2 (CH 3 (CH 2) 2 NH 3) ₃ Pb ₄ Cl _{13 ,} and But may be, but not limited to, one or more perovskite compounds selected from (H ₂ N = CHNH ₂ ) ₂ (CH ₃ (CH ₂ ) ₂ NH ₃ ) ₃ Pb ₄ F ₁₃ .

In one embodiment of the present invention, the first electrode 300 and the second electrode 100 are not particularly limited as long as they are conductive substrates. For example, selected from the group consisting of indium tin oxide (ITO), fluorine tin oxide (FTO), ZnO-Ga ₂ O ₃ , ZnO-Al ₂ O ₃ , tin oxide, zinc oxide, But is not limited to, a glass substrate or a plastic substrate containing a material that is a material for the substrate, or a conductive polymer such as Pt, Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, . But are not limited to, those selected from the group consisting of, for example, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polypropylene, polyimide, triacetylcellulose, and combinations thereof . For example, the conductive substrate may include, but is not limited to, being doped with a metal selected from the group consisting of Group 3 metals, such as Al, Ga, In, Ti, and combinations thereof .

In one embodiment of the present invention, the first electrode and the second electrode may be the same or different. In addition, the two electrodes may be placed approximately parallel, but are not limited thereto. However, the orientation angle between the two electrodes may be different, but the second electrode is approximately perpendicular to the first electrode in its orientation. The two layers may form a lattice or a crossbar, but are not limited thereto.

1, the first electrode and the second electrode are shown having a rectangular cross-section, but the two electrodes may be triangular, trapezoidal, rhombic, pentagonal, hexagonal, circular, or elliptical And may have the same other cross-sectional shape. However, the present invention is not limited thereto.

In one embodiment of the invention, there is at least one intermediate layer positioned between the first electrode and the second electrode and formed of a metallic material, and at least one intermediate layer positioned between the at least one intermediate layer and the second electrode But is not limited to, a second switching layer containing a layered organic-inorganic composite perovskite. More specifically, the intermediate layer is located between the switching layers, and the switching layers are located between the first electrode and the second electrode. The intermediate layer may use the same material as the first electrode, but is not limited thereto.

In one embodiment of the invention, the memristor may be implemented as a crossbar array formed of a plurality of memristors. This is an array of memristors that can connect each wire in a set of parallel wires of a memristor to all memristors of a second set of parallel wires that intersect the first set, But it is not limited thereto.

In one embodiment of the present invention, the step of forming a layer containing the layered organic-inorganic composite perovskite or the switching layer containing the layered organic / inorganic composite perovskite on the first electrode is performed by a low-temperature solution process But is not limited thereto.

In one embodiment of the invention, in the preparation of an organic / inorganic composite perovskite precursor solution for use in the low temperature solution process, RX, R'X, and MX ₂ are reacted in a polar aprotic solvent to produce M ²⁺ Of the precursor solution for producing a layered organic / inorganic composite perovskite having a concentration of 1 mol is prepared, but the present invention is not limited thereto.

In one embodiment of the invention, the polar aprotic solvent is selected from the group consisting of acetonitrile, dimethylformamide (DMF), dimethylacetamide (DMA) (Hereinafter referred to as " NMP "), dimethyl sulfoxide (DMSO) (hereinafter referred to as " DMSO "), gamma But are not limited to, those selected from the group consisting of Gamma-Butyrolactone (GBL), and combinations thereof.

In one embodiment of the present invention, the step of forming the switching layer containing the organic-inorganic composite perovskite or the organic-inorganic composite perovskite comprises reacting RX and MX ₃ in a polar aprotic solvent , The method comprising applying the precursor solution for producing an organic / inorganic composite perovskite to the first electrode, but is not limited thereto.

In one embodiment of the invention, one may further include those selected from the group consisting of DMSO, ethers, and combinations thereof to use the adduct-induced method. For example, the DMSO or ether may be further included in the same molar number as M < ^{2 +} > of the precursor solution. Through this additional step, pin-holes can be prevented from occurring in the subsequent use of the additional induction method in the fabrication of the device, but the present invention is not limited thereto.

In one embodiment of the present invention, the step of forming a layer containing the organic / inorganic composite perovskite or the switching layer containing the organic / inorganic composite perovskite includes the step of forming the inorganic / organic composite perovskite precursor The method may further include applying a solution to the first electrode and then performing a heat treatment, but the present invention is not limited thereto.

In one embodiment of the present invention, the first electrode may be subjected to UV-ozone treatment after ultrasonic cleaning with an organic solvent, and the organic / inorganic composite perovskite precursor solution is applied to the first electrode . In addition to this, for the additive induction method, a solvent selected from the group consisting of ether, chlorobenzene, toluene, and combinations thereof during the application is removed to form an excellent film- Can be generated. Thereafter, the layered organic / inorganic composite perovskite may be formed through heat treatment, and the second electrode may be deposited by vacuum deposition, thermal deposition, or a combination thereof. However, the present invention is not limited thereto.

In one embodiment of the invention, the organic solvent may be selected from the group consisting of neutral detergent, ethanol, acetone, ethanol, and combinations thereof, but is not limited thereto.

In one embodiment of the present invention, the application of the organic / inorganic composite perovskite precursor to the first electrode may be performed by spin coating, doctor blade coating, screen printing, inkjet printing, or slot die coating , But is not limited thereto.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following Examples are given for the purpose of helping understanding of the present invention, but the present invention is not limited to the following Examples.

[ Example ]

1. Combination of inorganic and organic Perovskite  Materials and Memristor  Produce

(1) Combination of organic and inorganic compounds Perovskite  Among the precursors BAI  And MAI synthesis

CH ₃ (CH ₂ ) ₃ NH ₃ I (BAI) was reacted with CH ₃ (CH ₂ ) ₃ NH ₂ and HI in a molar ratio of 1: 1 in an ice bath for 2 hours, then washed with ether, Dried. CH ₃ NH ₃ I (MAI) was obtained by reacting CH ₃ NH ₂ and HI in a molar ratio of 1: 1 in an ice bath for 2 hours with stirring, then washing with ether and drying in a vacuum oven. Other chemicals were purchased and used.

(2) Combination of organic and inorganic compounds Perovskite  Preparation of precursor solution

At room _{temperature, BA 2 MA n - 1 Pb} n I 3n +1 (n = 1,2,3,4) to the mole number ratio BAI, MAI, and PbI ₂ for the general formula and DMF as a solvent [Pb ^{2 +]} = 1 M concentration to make a precursor solution. During the fabrication of the memristor, a molar volume of DMSO equal to [Pb ^{2 +} ] was added to use the adduct-induced method.

Figure 2 shows the XRD patterns of BA ₂ PbI ₄ , BA ₂ MAPb ₂ I ₇ , BA ₂ MA ₂ Pb ₃ I ₁₀ , and BA ₂ MA ₃ Pb ₄ I ₁₃ [ J. Am. Chem . Soc . 2015 , 137 , 7843-7850], it can be confirmed that the intended substance was properly synthesized through the XRD pattern.

(3) Memristor  Produce

One) Example  One

An indium tin oxide (ITO) based conductive substrate was used as the first electrode. The ITO substrate was ultrasonically cleaned for 15 minutes in the order of neutral detergent, ethanol, acetone, and ethanol, followed by UV-ozone treatment for 15 minutes. The prepared organic / inorganic composite perovskite precursor solution was deposited on the ITO substrate by spin coating to prepare an organic / inorganic composite perovskite layer. In this case, heat treatment at 100 ° C can be performed to volatilize the precursor solvent, and BA ₂ MA _{n - 1} Pb _n I _{3n + 1} (n = 1, 2, 3, 4) assembled composite perovskite layer can be formed. The adduct-induced method of dropping the ether in the spin coating was used to obtain an excellent film quality in which the pinhole remained, and the organic perovskite layer was formed by heat treatment at 100 ° C. Next, Ag was thermally deposited in a high vacuum of 10 ^-6 torr to form a second electrode.

2) Example  2

The first electrode was a conductive substrate on which Ti and Pt were sequentially deposited on an Si wafer through an e-beam evaporator to 20 nm and 100 nm, respectively. The conductive substrate was ultrasonically cleaned for 15 minutes in the order of neutral detergent, ethanol, acetone, and ethanol, followed by UV-ozone treatment for 15 minutes. The prepared organic / inorganic composite perovskite precursor solution was deposited on the Pt substrate by spin coating to prepare an organic / inorganic composite perovskite layer. The adduct-induced method of dropping the ether in the spin coating was used to obtain an excellent film quality in which the pinhole was absent. Heat treatment was performed at 65 ° C for 1 minute and at 100 ° C for 10 minutes, To form a skate layer. Next, Ag was thermally deposited in a high vacuum of 10 ^-6 torr to form a second electrode.

3) Combination of inorganic and organic Perovskite  Image analysis of layers

FIG. 3 is a photograph of BA ₂ PbI ₄ , BA ₂ MAPb ₂ I ₇ , BA ₂ MA ₂ Pb ₃ I ₁₀ , and BA ₂ MA ₃ Pb ₄ I ₁₃ coated on a platinum substrate, and BA ₂ PbI ₄ , BA ₂ MAP b ₂ I ₇ , BA ₂ MA ₂ Pb ₃ I ₁₀ , and BA ₂ MA ₃ Pb ₄ I ₁₃ [ J. Am. Chem . Soc . 2015 , 137 , 7843-7850].

2. Layered organic-inorganic hybrid Perovskite Memristor  Character analysis

(1) Layered organic-inorganic hybrid Perovskite Memristor  Analysis method

BA ₂ PbI ₄ , BA ₂ MAPb ₂ I ₇ , BA ₂ MA ₂ Pb ₃ I ₁₀ , and BA ₂ MA ₃ Pb ₄ I ₁₃ Voltage sweeps were measured linearly over time in the order of maximum voltage (+), 0 V, minimum voltage (-), and 0 V starting at 0 V.

In the voltage sweep of BA ₂ MAPb ₂ I ₇ , the absolute values of the maximum voltage and the minimum voltage are set to 20 mV, 40 mV, 60 mV, 80 mV, 100 mV, 120 mV, 140 mV, 160 mV, 180 mV, And 200 mV, respectively, while measuring current-voltage curves corresponding to 10 cycles.

Further, BA ₂ PbI ₄ And BA ₂ MAPb ₂ I ₇ were measured in the initial 10 cycles.

Further, BA ₂ PbI ₄ Were measured in the initial 100 cycles and the resistance values of HRS and LRS were compared at 1500 V / cm based on the measured current - voltage characteristics.

(2) Layered organic-inorganic hybrid Perovskite Memristor  Analysis

4A to 4D, the current changes from HRS to LRS and increases the current flow. With respect to the switching voltage, BA ₂ PbI ₄ is 2x10 ³ V / cm, BA ₂ MAPb ₂ I ₇ is 3x10 ³ V / cm, BA ₂ MA ₂ Pb ₃ I ₁₀ and BA ₂ MA ₃ Pb ₄ I ₁₃ are about 5x10 ³ V / cm. In addition, the on / off ratio of HRS and LRS is as high as 10 ⁴ ~ 10 ⁵ .

As can be seen from FIG. 5, when the switching voltage is reached without a separate electroforming process, the current changes from HRS to LRS.

6 (BA ₂ PbI ₄ ) and FIG. 7 (BA ₂ MAPb ₂ I ₇ ), BA ₂ PbI ₄ And BA ₂ MAPb ₂ I ₇ maintains a high on-off ratio at the (+) electric field side during the repeated voltage sweep, and reversible resistance switching appears.

As can be seen from Figs. 8 and 9, it can be seen that the resistance values of HRS and LRS on the data of 100 cycles of BA ₂ MAPb ₂ I ₇ are stable, and excellent results can be expected when the device is optimized have.

3. BA ₂ PbI ₄ And MAPBI ₃ of  Comparison of current-voltage characteristics

(1) Comparison method

BA ₂ PbI ₄ The voltage sweep of the switching layer including the layered perovskite and the switching layer including the MAPbI ₃ 3D perovskite starts at 0 V and reaches the maximum voltage (+), 0 V, minimum voltage (-), 0 V, the current-voltage curve was measured linearly with time.

BA ₂ PbI ₄ And the endurance was measured under conditions similar to the operation of the actual equipment. Specifically, more than 150 cycles. The voltage was continuously applied at 0.5 V and -0.5 V and measured at a speed of 100 ms.

BA ₂ PbI ₄ And the current-voltage characteristics of MAPbI ₃ were measured in the initial 10 cycles.

BA ₂ PbI ₄ And MAPbI ₃ current-voltage characteristics were derived based on the resistance in the initial 10 cycles.

(2) Comparison result

Figures 10A and 10B show the results of BA ₂ PbI ₄ Current characteristic of the switching layer including the layered perovskite.

11A and 11B are graphs showing voltage-current characteristics of a switching layer including a MAPbI ₃ 3D perovskite.

BA ₂ PbI ₄ is structurally stable compared to MAPbI ₃ , which affects the driving of the memories, which continuously apply voltage to generate switching. In particular, comparing FIG. 10B and FIG. 11B, in case of BA ₂ PbI ₄ , high resistance and low resistance state are clearly distinguished even after several measurements, whereas in case of MAPbI ₃ , And no further switching occurred. This means that the change in the physical properties of MAPBI ₃ due to the voltage irreversibly occurred and is due to the instability of the material. Further, BA ₂ PbI ₄ It can be seen that the switching layer including the layered perovskite can be driven at a lower voltage.

In actual operation of the device, a certain level of pulses is applied to switch. Thus, FIG. 12A shows a measurement of endurance in a condition similar to an actual operation by applying a pulse voltage to BA ₂ PbI ₄ having stable switching. As can be seen from FIG. 12B, BA ₂ PbI ₄ was capable of stable switching more than 150 times while maintaining an on / off ratio of 10 ^{6 at a} rate of 100 ms, while MAPbI ₃ was unstable and almost impossible to measure. Therefore, it can be confirmed that BA ₂ PbI ₄ is more suitable than MAPbI ₃ as a constituent of the memristor in terms of ensuring stable driving and speed. In addition, a faster drive speed can be achieved with a higher voltage pulse condition in structurally stable BA ₂ PbI ₄ memristors.

Figs. 13A and 13B are graphs respectively showing BA ₂ PbI ₄ And MAPBI ₃ Lt; RTI ID = 0.0 > 10 < / RTI > cycle of current-voltage characteristics with respect to each voltage sweep. As can be seen, BA ₂ PbI ₄ , It can be seen that the high on-off ratio (~ 10 ⁷ ) is maintained and the persistence is high. In addition, there is an advantage in that the durability is good and the switching voltage is low. On the other hand, in the case of MAPbI ₃ , the low on-off ratio (~ 10 ⁶ ) is maintained and the persistence is very short.

Figs. 14A and 14B show the results of BA ₂ PbI ₄ And a MAPbI ₃ current-voltage characteristic on the basis of resistance. In comparison with having a high on-off ratio of 10 ⁷ in FIGS. 10 a and 10 b, in the case of FIG. 14 b, the persistence is very short, It can be seen that the ratio does not have.

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: first electrode
200: switching layer
300: second electrode

Claims (17)

A first electrode;
A second electrode; And
A switching layer containing a layered organic / inorganic composite perovskite
/ RTI >
Wherein a switching layer containing the layered organic / inorganic composite perovskite is disposed between the first electrode and the second electrode,
Wherein the layered organic / inorganic composite perovskite comprises an organic / inorganic composite perovskite material represented by the following Chemical Formula 3,
Wherein the switching layer is applied to the switching drive by varying the resistance according to the magnitude and direction of the voltage and forming the conduction channel during the operation of the memristor to determine the on-
(3)
R ₂ R ' _{n - 1} M _n X _{3n +1} ;
In Formula 3,
n is a number of 1 or more,
M is ^{Cu 2 +, Ni 2 +,} Co 2 +, Fe 2 +, Mn 2 +, Cr 2 +, Pd 2 +, Cd 2 +, Yb 2 +, Pb 2 +, Sn 2 +, Ge 2 +, Bi ^{3 +,} Sb ^3+, and comprises a metal cation selected from the group consisting of a combination thereof,
R and R 'are each independently an organic cation,
X contains an anion.
The method according to claim 1,
Wherein R and R 'are each independently a monovalent organic ammonium cation represented by (R ¹ R ² R ³ R ⁴ N) ⁺ ,
Each of R ¹ to R ⁴ independently represents hydrogen, a substituted or unsubstituted linear or branched alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted carbon number An aryl group having 6 to 20 carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 20 carbon atoms, and combinations thereof.
The method according to claim 1,
The R and the R 'are, each independently, a monovalent formamidinium cation represented as the general formula ^{(R 6 R 7 N = CH} -NR 8 R 9) +,
Each of R ⁶ to R ⁹ independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, ≪ RTI ID = 0.0 > and / or < / RTI > combinations thereof.
The method according to claim 1,
Wherein R and R 'each independently comprise an alkylammonium cation or a formamidinium cation having from 1 to 6 carbon atoms.
The method according to claim 1,
Wherein n has a value of from 1 to 4.
The method according to claim 1,
Wherein X comprises a halide anion or a chalcogenide anion.
The method according to claim 1,
Wherein the first electrode and the second electrode comprise the same or different electrode materials.
Forming a first electrode;
Forming a switching layer containing a layered organic / inorganic composite perovskite on the first electrode; And
Forming a second electrode on the switching layer containing the layered organic / inorganic composite perovskite
A method for manufacturing a memristor comprising:
Wherein the layered organic / inorganic composite perovskite comprises an organic / inorganic composite perovskite material represented by the following Chemical Formula 3,
Wherein the switching layer is applied to the switching drive by varying the resistance according to the magnitude and direction of the voltage, and forming the conduction channel during the operation of the memristor to determine the on-off state.
(3)
R ₂ R ' _{n - 1} M _n X _{3n +1} ;
In Formula 3,
n is a number of 1 or more,
M is ^{Cu 2 +, Ni 2 +,} Co 2 +, Fe 2 +, Mn 2 +, Cr 2 +, Pd 2 +, Cd 2 +, Yb 2 +, Pb 2 +, Sn 2 +, Ge 2 +, Bi ^{3 +,} Sb ^3+, and comprises a metal cation selected from the group consisting of a combination thereof,
R and R 'are each independently an organic cation,
X contains an anion.
9. The method of claim 8,
Wherein R and R 'are each independently a monovalent organic ammonium ion represented by (R ¹ R ² R ³ R ⁴ N) ⁺ ,
Each of R ¹ to R ⁴ independently represents hydrogen, a substituted or unsubstituted linear or branched alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted carbon number A substituted or unsubstituted aryl group having 6 to 20 carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 20 carbon atoms, and combinations thereof.
9. The method of claim 8,
The R and the R 'are, each independently, a monovalent formamidinium cation represented as the general formula ^{(R 6 R 7 N = CH} -NR 8 R 9) +,
Wherein R ⁶ to R ^{9 each} represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, and combinations thereof. ≪ / RTI >
9. The method of claim 8,
Wherein R and R 'each independently comprise an alkylammonium cation or a formamidinium cation having from 1 to 6 carbon atoms.
9. The method of claim 8,
Wherein n has a value of from 1 to 4.
9. The method of claim 8,
Wherein X comprises a halide anion or a chalcogenide anion.
9. The method of claim 8,
Wherein the first electrode and the second electrode comprise the same or different materials.
9. The method of claim 8,
The step of forming the switching layer containing the layered organic / inorganic composite perovskite comprises the steps of: preparing a layered organic / inorganic composite perovskite precursor solution obtained by reacting RX, R'X, and MX ₂ in a polar aprotic solvent; And applying the first electrode to the first electrode,
Wherein R, R ', M, and X are the same as defined in claim 10.
16. The method of claim 15,
Wherein the precursor solution for preparing the layered organic / inorganic composite perovskite further comprises a compound selected from the group consisting of dimethyl sulfoxide, ether, and combinations thereof.
16. The method of claim 15,
Wherein the step of forming the switching layer containing the layered organic / inorganic composite perovskite further comprises a step of applying a precursor solution for forming the layered organic / inorganic composite perovskite, followed by heat treatment.

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