KR20190014188A - Mask frame assembly, method for manufacturing the same and method for manufacturing a display apparatus using the same - Google Patents

Abstract

Disclosed, in accordance with one embodiment of the present invention, is a mask frame assembly comprising: a frame having an opening part; a body part coupled to the frame; a first sub-pattern part connected to the body part while being surrounded by the body part and having a first grain size; and a pattern part including a second sub-pattern part disposed on the first sub-pattern part and having a second grain size smaller than the first grain size. The pattern part includes a plurality of pattern holes through which a deposition material passes, and the pattern holes passes through the first sub-pattern part and the second sub-pattern part.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a mask frame assembly, a method of manufacturing the same, and a manufacturing method of the display apparatus.

Embodiments of the present invention relate to a mask frame assembly, a method of manufacturing the same, and a method of manufacturing a display device.

In general, an organic light emitting display device, which is one of the flat panel displays, is an active light emitting display device having a wide viewing angle, excellent contrast, driving with low voltage, light weight, .

Such a light emitting device is classified into an inorganic light emitting device and an organic light emitting device depending on the material forming the light emitting layer. The organic light emitting device has an advantage of being excellent in characteristics such as luminance and response speed, and capable of color display Recently, the development is progressing actively.

The organic film and / or the electrode included in the organic light emitting display are generally formed by a vacuum deposition method. In the vacuum vapor deposition method, a mask frame assembly having pattern holes having a predetermined pattern is used, and the deposition material is deposited on the substrate of the display device through the pattern holes. In recent years, as the organic light emitting display gradually becomes higher in resolution, it is required that the thickness of the mask frame assembly is thinned.

The background art described above is technical information acquired by the inventor for the derivation of the embodiments of the present invention or obtained in the derivation process and can not necessarily be known technology disclosed to the general public before the application of the embodiments of the present invention none.

It is an object of embodiments of the present invention to provide a mask frame assembly that realizes a high-resolution display, a method of manufacturing the same, and a manufacturing method of the display device.

It is another object of the present invention to provide a frame assembly capable of machining a pattern hole having a precise pattern while ensuring mechanical strength of a mask frame assembly, a method of manufacturing the same, and a method of manufacturing a display device.

In one embodiment of the present invention, there is provided a display device including a frame having an opening, a body coupled to the frame, a first subpattern portion connected to the body portion and surrounded by the body portion, the first subpattern portion having a first crystal grain size, And a pattern portion including a second sub-pattern portion disposed on the first sub-pattern portion and having a second crystal grain size smaller than the first crystal grain size, wherein the pattern portion includes a plurality of pattern holes passing through the deposition material, Discloses a mask frame assembly that passes through a first sub-pattern portion and a second sub-pattern portion.

In this embodiment, the body portion has a first thickness, the first sub-pattern portion has a second thickness, the second sub-pattern portion has a third thickness, the first thickness is a sum of the second thickness and the third thickness And is thicker than the thickness.

In the present embodiment, the first thickness may be 10 占 퐉 to 50 占 퐉, and the sum of the second thickness and the third thickness may be 5 占 퐉 to 20 占 퐉.

In the present embodiment, the body portion and the first sub-pattern portion may include at least one of an invar alloy and a super invar alloy manufactured by rolling.

In this embodiment, the second subpattern may comprise at least one of an invar alloy and a super invar alloy made by electroforming.

In the present embodiment, the pattern hole may be tapered such that its cross section widens from the first subpattern portion to the second subpattern portion.

According to another embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: preparing a mask base material manufactured by rolling; half-etching a part of the mask base material on one side of the mask base material to form a first sub- , Attaching an insulating film to a body portion on one side of the mask base material excluding the first sub pattern portion and attaching a conductor to the other side opposite to one side of the mask base material, patterning the second subpattern on the first subpattern by performing electroforming on the first subpattern, separating the insulating thin film and the conductor from the mask base material, irradiating the second subpattern with a laser beam, And forming a plurality of pattern holes passing through the pattern portion and the second sub-pattern portion.

In this embodiment, the half-etching may be performed by wet-etching.

In this embodiment, the body portion has a first thickness, the first sub-pattern portion has a second thickness, the second sub-pattern portion has a third thickness, the first thickness is a sum of the second thickness and the third thickness And is thicker than the thickness.

In the present embodiment, the mask base material and the second sub-pattern portion may include at least one of an invar alloy and a super invar alloy.

In this embodiment, the grain size of the mask base material may be larger than the grain size of the second sub-pattern portion.

In this embodiment, it is preferable that the method further comprises the step of engaging the body portion with the frame having the opening portion, wherein the plurality of pattern holes communicate with the opening portion.

In this embodiment, the laser beam is irradiated to the surface of the second subpattern portion along the direction from the second subpattern portion toward the first subpattern portion.

In the present embodiment, the pattern hole may be tapered such that its cross section widens from the first subpattern portion to the second subpattern portion.

According to another embodiment of the present invention, there is provided a method of manufacturing a display device, comprising the steps of: charging a display substrate and a mask frame assembly into a chamber; passing a deposition material sprayed from an evaporation source to a mask frame assembly to form a deposition material on the display substrate; The mask frame assembly includes a frame having an opening, a body coupled to the frame, a first sub-pattern portion connected to the body portion and surrounded by the body portion and having a first crystal grain size, And a pattern portion including a second sub-pattern portion disposed on the sub pattern portion and having a second crystal grain size smaller than the first crystal grain size, wherein the pattern portion includes a plurality of pattern holes for allowing the deposition material to pass therethrough, 1 sub-pattern portion and the second sub-pattern portion.

In this embodiment, the body portion has a first thickness, the first sub-pattern portion has a second thickness, the second sub-pattern portion has a third thickness, the first thickness is a sum of the second thickness and the third thickness And is thicker than the thickness.

In the present embodiment, the first thickness may be 10 占 퐉 to 50 占 퐉, and the sum of the second thickness and the third thickness may be 5 占 퐉 to 20 占 퐉.

In the present embodiment, the body portion and the first sub-pattern portion may include at least one of an invar alloy and a super invar alloy manufactured by rolling.

In this embodiment, the second subpattern may comprise at least one of an invar alloy and a super invar alloy made by electroforming.

In the present embodiment, the pattern hole may be tapered such that its cross section widens from the first subpattern portion to the second subpattern portion.

Other aspects, features, and advantages will become apparent from the following drawings, claims, and detailed description of the invention.

According to the mask frame assembly, the method of manufacturing the same, and the method of manufacturing the display device according to the embodiments of the present invention, it is possible to manufacture a mask frame assembly having excellent welding characteristics with the frame and excellent processability of the pattern hole by the laser beam.

In addition, it is possible to realize a high-resolution display and at the same time to remarkably reduce the display defective rate.

Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view schematically illustrating a mask frame assembly according to an embodiment of the present invention.
2 is a perspective view and a plan view schematically showing a mask of a mask frame assembly according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view showing the mask frame assembly shown in FIG. 2 cut along the X-axis direction.
FIGS. 4 to 9 are conceptual views sequentially illustrating a method of manufacturing a mask frame assembly according to another embodiment of the present invention.
10 is a conceptual view schematically showing an apparatus for manufacturing a display device for depositing a deposition material on a display substrate using a mask frame assembly according to an embodiment of the present invention.
11 is a plan view showing a display device manufactured by the manufacturing apparatus of the display device shown in Fig.
12 is a cross-sectional view taken along the line AA shown in Fig.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods of achieving them will be apparent with reference to the embodiments described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments described below, but may be implemented in various forms.

In the following embodiments, the terms first, second, and the like are used for the purpose of distinguishing one element from another element, not the limitative meaning. Also, the singular < RTI ID = 0.0 > expression < / RTI > includes plural representations unless the context clearly dictates otherwise. Also, the terms include, including, etc. mean that there is a feature, or element, recited in the specification and does not preclude the possibility that one or more other features or components may be added.

In the following embodiments, when a film, an area, an element, or the like is on or on another part of the part, not only the case of being directly on another part but also another film, area, And the like.

Also, when a component is connected, it includes not only when the components are directly connected but also indirectly when other components are interposed between the components. For example, when an element is referred to as being electrically connected in this specification, such a case includes not only the case where such elements are directly electrically connected but also the case where other elements are interposed therebetween and indirectly electrically connected.

Also, in the drawings, for convenience of explanation, the components may be exaggerated or reduced in size. For example, the size of each component shown in the drawings is arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to the illustrated one.

Also, if an embodiment is otherwise feasible, the particular process sequence may be performed differently than the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, and may be performed in the reverse order of the order described.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding components throughout the drawings, and a duplicate description thereof will be omitted .

2 is a perspective view and a plan view schematically showing a mask of a mask frame assembly according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view of the mask frame assembly according to an embodiment of the present invention. Sectional view of the mask frame assembly shown in Fig. 2 taken along the X-axis direction.

Referring first to FIG. 1, a mask frame assembly 100 according to an embodiment of the present invention may include a frame 110 in the form of a frame and a mask M coupled to the frame 110. The mask M may include a body part 120 coupled to the frame 110 and a pattern part 130 surrounded by the body part 120. [

The frame 110 has an opening 111 and the body of the frame 110 may be a rigid body surrounding the opening 111. [ Here, the frame 110 shown in FIGS. 1 and 2 has a rectangular opening 111 at the center, but the embodiments of the present invention to be described below are not limited thereto. For example, Circular, oval, polygonal, and the like. Hereinafter, for convenience of explanation, the case where the opening 111 is formed in a rectangular shape and the main body of the frame 110 is configured to surround the four sides of the opening 111 will be described.

In detail, the frame 110 includes two short sides (not shown) extending in the X axis direction and facing each other in the Y axis direction, and two long sides (not shown) extending along the Y axis direction and facing each other in the X axis direction can do.

Here, the two short sides may be formed to have a shorter length than the two long sides, and these two short sides and the two long sides may be connected to each other to constitute the frame 110 of a rectangular frame . In addition, the two short sides and the two long sides may be configured to be detachable from each other and configured to be detachable from each other. However, for convenience of description, as shown in the drawings, two short sides and two long sides Are connected to each other will be mainly described.

In detail, the frame 110 may be made of a material having a small deformation at the time of welding with the mask M, such as a metal having high rigidity. Although not shown in the drawings, the frame 110 is formed with a welding portion (not shown) welded to the frame 110 and the mask M, and the welding portion is formed at a high temperature in the welding process, It is preferable that it is made of a material having a small thermal deformation with respect to such high-temperature heat.

The mask M may be formed of a plurality of divided stick-shaped masks and may be installed on the frame 110 in a state where both ends are stretched. The reason why the mask M is installed in a state of being stretched in the frame 110 is that when the mask M is enlarged, the phenomenon that the mask M sags toward the center of the opening 111 due to the self weight of the mask M This can happen. When the mask M is sagged, deposition accuracy of a deposition material deposited on the substrate S through the mask M is lowered, and there is a risk that a shadow phenomenon occurs and color mixing may occur between the sub-pixels.

The mask M may include a body portion 120 coupled to the frame 110 and a pattern portion 130 disposed to be surrounded by the body portion 120 to pass the deposition material during the deposition process .

First, the body part 120 is a constituent element of the body of the mask M except for the pattern part 130. The body part 120 blocks the deposition material during the deposition process. . Part of the body part 120 positioned at both ends of the mask M with respect to both ends of the mask M, that is, the X axis direction, is formed in the frame 110, As shown in FIG. As described above, both ends of the body 120 may be welded to the frame 110, so that it may include a material having a small thermal deformation, and it is preferable that the material includes sufficient rigidity for welding. Concrete material of the body part 120 will be discussed below with reference to the pattern part 130.

3, the pattern part 130 is connected to the body part 120 and is surrounded by the body part 120. The first sub pattern part 131 having a first crystal grain size And a second sub pattern part 132 disposed on the first sub pattern part 131 and having a second crystal grain size smaller than the first crystal grain size. The pattern portion 130 may include a plurality of pattern holes 130h through which the deposition material passes. The pattern hole 130h may include a first sub pattern portion 131 and a second sub pattern portion 132, As shown in FIG. In detail, the pattern hole 130h may be tapered such that its cross section becomes wider from the first subpattern 131 to the second subpattern 132.

Specifically, the evaporation material that has passed through the pattern hole PH is deposited on the effective area (see DA in FIG. 11) of the display substrate (see FIG. 11) to form an intermediate layer (see FIG. 12B in FIG. 12) .

In detail, the body part 120 and the first sub pattern part 131 may include at least one of an invar alloy and a super invar alloy manufactured by rolling. On the other hand, the second subpattern 132 may include at least one of an invar alloy and a super invar alloy manufactured by electroforming. Here, the invar alloy is an alloy in which iron (Fe) and nickel (Ni) are mixed in a specific ratio, and the super invar alloy means an alloy in which cobalt (Co) is added to the invar alloy.

9, the pattern hole 130h can be processed by irradiating the pattern portion 130 with the laser beam LB. At this time, the laser beam LB may be irradiated on the surface of the second subpattern 132. That is, the pattern hole 130h can be processed by etching the second sub-pattern portion 132 and the first sub-pattern portion 131 sequentially by the laser beam LB. At this time, protrusions may be formed around the region where the pattern hole 130h is formed in the process of irradiating the laser beam LB to the second subpattern 132. [ Unlike the mask frame assembly 100 according to the embodiments of the present invention, when the laser beam LB is irradiated on the first subpattern 131, the laser beam LB is formed on the surface of the first subpattern 131 Protrusions formed by irradiating the laser beam LB onto the second sub-pattern portion 132 may be formed to have a larger number of protrusions as well as higher heights.

In detail, since the first sub-pattern portion 131 is manufactured by rolling, the first crystal grain size is relatively large, whereas the second sub-pattern portion 132 is manufactured by electroplating, so that the second crystal grain size is relatively It can be formed small. That is, the mask frame assembly 100 according to the embodiments of the present invention includes a first sub-pattern portion 131 manufactured by rolling and having relatively large crystal grains, and a relatively small crystal grains And a pattern portion 130 including a second sub-pattern portion 132 having a first sub-

Generally, an invar alloy or a super invar alloy formed by electroplating is excellent in laser processing characteristics, while an invar alloy or a super invar alloy formed by rolling is inferior in laser processing characteristics to an electron. Here, "excellent laser processing characteristics" means that the number of projections formed by irradiation of the laser beam LB and the height (size) thereof are small.

These protrusions formed in the process of laser processing the pattern holes 130h increase the surface roughness of the pattern portions 130 and are formed in the inner space of the pattern holes 130h in severe cases, (Which leads to a display failure). Therefore, when the pattern hole 130h is processed by irradiating the laser beam LB onto the second subpattern 132 formed by electroplating, the possibility of forming protrusions around the pattern hole 130h is remarkably reduced Thereby reducing the display defective rate.

However, the invar alloy or super-invar alloy manufactured by electroplating is larger in the amount of the melt when the heat is applied than that produced by rolling. Therefore, when the body 120 is made of envar alloy or super invar alloy made of electroplated copper, there is a high possibility that welding fails in the process of welding the frame 110 and the body 120. Therefore, when the body part 120 is made of an invar alloy or a shrub invar alloy manufactured by rolling, as in the case of the mask frame assembly 100 according to the embodiments of the present invention, it is superior in welding workability to that made by electroplating .

In addition, since the alloyed alloy or the super-invar alloy made by rolling has a lower coefficient of thermal expansion (CTE) than that of the nickel-plated alloy, the body portion 120 And the first sub-pattern portion 131 are made of rolled unalloyed alloy or super-invar alloy, the thermal characteristics of the mask frame assembly 100 may be excellent, so that an additional heat treatment process may not be required.

3, the body 120 has a first thickness t ₁ , the first sub-pattern 131 has a second thickness t ₂ , and the second sub-pattern 132 Has a third thickness t ₃ , and the first thickness may be thicker than the sum of the second thickness and the third thickness (t ₁ > t ₂ + t ₃ ).

The reason why the body part 120 is formed to be thicker than the pattern part 130 is that the body part 120 is welded to the frame 110 as described above so that sufficient rigidity of the body part 120 is ensured It is possible to minimize defects in the welding of the frame 110 and the body part 120.

Specifically, the first thickness may be 10 占 퐉 to 50 占 퐉, and the sum of the second thickness and the third thickness may be 5 占 퐉 to 20 占 퐉.

4 to 9, a method of manufacturing the mask frame assembly 100 according to an embodiment of the present invention shown in FIGS. 1 to 3 will be described in more detail.

FIGS. 4 to 9 are conceptual views sequentially illustrating a method of manufacturing a mask frame assembly according to another embodiment of the present invention.

First, referring to FIG. 4, a mask base material BM prepared by rolling processing is prepared.

5, a partial area HEA of the mask base material BM is half-etched on one side of the mask base material BM to form the first sub-pattern 131. Next, as shown in FIG. At this time, the half-etching may be performed by wet-etching.

Referring to FIG. 6, an insulating film (IF) is attached to the body part 120 on one side of the mask base material BM except for the first subpattern 131, The conductor (C) is attached to the opposite surface of one side of the BM.

7, an insulating thin film IF is attached to the body 120 and electroplating is performed in a state where the conductor C is attached to the other surface of the mask base material BM, The second sub-pattern portion 9132 is plated on the first substrate portion 131).

Then, as shown in Fig. 8, the insulating thin film IF and the conductor C are separated from the mask base material BM.

9, a laser beam LB is irradiated toward the second subpattern 132 to form a plurality of (for example, two) laser beams LB passing through the first subpattern 131 and the second subpattern 132 Thereby forming a pattern hole 130h. In detail, the laser beam LB is irradiated to the surface of the second subpattern 132 along the direction from the second subpattern 132 to the first subpattern 131, The display failure rate can be reduced by processing the pattern hole 130h from the second sub-pattern portion 132 having excellent characteristics.

Although not shown in the drawing, the mask M (see FIG. 9) composed of the body part 120, the pattern part 130 including the first subpattern part 131 and the second subpattern part 132, May be coupled to the frame 110 as shown in FIG. 3 to produce the mask frame assembly 100.

4 to 9, the method of manufacturing a mask frame assembly according to another embodiment of the present invention has an excellent welding characteristic with respect to the frame 110, and at the same time, the pattern hole 130h by the laser beam LB, The mask frame assembly 100 having excellent processability can be manufactured.

10 is a conceptual view schematically showing an apparatus for manufacturing a display device for depositing a deposition material on a display substrate using a mask frame assembly according to an embodiment of the present invention.

Referring to FIG. 10, a display apparatus manufacturing apparatus 200 includes a chamber 210, a first support 220, a second support 230, a vision unit 240, a mask frame assembly 100, 250 and a pressure regulator 260.

The chamber 210 may have a space formed therein, and a portion of the chamber 210 may be formed to be open. A gate valve 210A is provided at an opened portion of the chamber 210 to selectively open and close the opened portion of the chamber 210. [

The first support part 220 can support the display substrate S. At this time, the first support part 220 can support the display substrate S in various ways. For example, the first support portion 220 may include an electrostatic chuck or an adhesive chuck. In another embodiment, the first support part 220 may include a bracket, a clamp, or the like for supporting a part of the display substrate S. The first support part 220 is not limited to the above, and may include any device capable of supporting the display substrate S. Hereinafter, for convenience of explanation, the first supporting part 220 includes an electrostatic chuck or an adhesive chuck.

The second support portion 230 may be supported by the mask frame assembly 100. At this time, the mask frame assembly 100 can be finely adjusted in at least two or more directions different from each other.

The vision unit 240 can photograph the position of the display substrate S and the mask frame assembly 100. At this time, the display substrate S and the mask frame assembly 100 can be aligned by moving at least one of the display substrate S and the mask frame assembly 100 based on the image photographed by the vision unit 240.

The evaporation source 250 may evaporate after the evaporation material is inserted therein. At this time, the evaporation source 250 may include a heater 251, and the evaporation material may be evaporated by the heat applied from the heater 251.

The evaporation source 250 may be formed in various shapes. For example, the evaporation source 250 may be in the form of a point vapor source in which an inlet portion through which the evaporation material is discharged is formed in a circular shape. Further, the evaporation source 250 may be formed in a long shape, and may have a plurality of inlet portions or a linear evaporation source shape such as a long hole shape. Hereinafter, for convenience of explanation, the deposition source 250 is disposed to face one point of the mask frame assembly 100 and will be described in detail with reference to the case of a point vapor source.

The pressure regulator 260 may be connected to the chamber 210 to regulate the pressure inside the chamber 210 to be similar to atmospheric pressure or vacuum. The pressure regulating unit 260 may include a connection pipe 261 connected to the chamber 210 and a pressure regulating pump 262 disposed in the connection pipe 261.

Meanwhile, a method of manufacturing the display device (not shown) through the display device manufacturing apparatus 200 as described above can be prepared by preparing the display substrate S.

The pressure regulator 260 can be maintained at atmospheric pressure inside the chamber 210 and the display substrate S and the mask frame assembly 100 are inserted into the chamber 210 after the gate valve 210A is opened. . At this time, a separate robot arm, a shuttle, or the like may be provided inside or outside the chamber 210 to transfer the display substrate S and the mask frame assembly 100.

When the above process is completed, the pressure regulator 260 can maintain the inside of the chamber 210 to be substantially similar to vacuum. The vision unit 240 photographs the display substrate S and the mask frame assembly 100 to finely drive the first support unit 220 and the second support unit 230 to drive the display substrate S and the mask frame assembly 100 may be finely adjusted to align the display substrate S and the mask frame assembly 100. [

The heater 250A may be operated to supply the deposition material to the mask frame assembly 100 in the deposition source 250. [ The deposition material that has passed through the mask frame assembly 100 may be deposited on the display substrate S in a predetermined pattern.

During the above process, at least one of the evaporation source 250 and the display substrate S may linearly move. As another embodiment, it is also possible that the deposition source 250 and the display substrate S are both kept stationary. Hereinafter, the deposition source 250 and the display substrate S will be described in detail with reference to the case where the deposition is performed in a stationary state for convenience of explanation.

11 is a plan view showing a display device manufactured by the manufacturing apparatus of the display device shown in Fig.

Referring to Fig. 11, the display device 20 may include a display area DA on the substrate 21 and a non-display area NDA surrounding the outline of the display area DA. A light emitting portion (not shown) is disposed in the display area DA, and power supply wiring (not shown) is disposed in the non-display area NDA. In addition, the pad portion P may be disposed in the non-display region NDA.

12 is a cross-sectional view taken along the line A-A shown in Fig.

10, the display device 20 may include a display substrate S, an intermediate layer 28B, an opposite electrode 28C, and an encapsulation layer (not shown). At this time, the display substrate S may include a substrate 21, a buffer layer 22, a thin film transistor (TFT), a passivation film 27, a pixel electrode 28A and a pixel defining layer 29. In addition, the sealing layer may include a sealing substrate (not shown) or a thin sealing layer (E) which is the same as or similar to the substrate 21.

At this time, if the sealing layer includes the sealing substrate, a separate sealing member (not shown) may be disposed between the substrate 21 and the sealing substrate. Hereinafter, for convenience of explanation, the case where the sealing layer includes the thin-film sealing layer E will be described in detail.

The substrate 21 may be made of a plastic material, or a metal material such as SUS or Ti may be used. The substrate 21 may be formed of polyimide (PI). Hereinafter, for convenience of explanation, the case where the substrate 21 is formed of polyimide will be described in detail.

A light emitting portion (not shown) may be formed on the substrate 21. At this time, the light emitting portion is provided with a thin film transistor (TFT), a passivation film 27 is formed to cover the passivation film 27, and an organic light emitting element 28 may be formed on the passivation film 27.

A buffer layer 22 made of an organic compound and / or an inorganic compound is further formed on the upper surface of the substrate 21, and SiOx (x? 1) and SiNx (x? 1) can be formed.

After the active layer 23 arranged in a predetermined pattern is formed on the buffer layer 22, the active layer 23 is buried by the gate insulating layer 24. The active layer 23 has a source region 23C and a drain region 23A and further includes a channel region 23B therebetween.

The active layer 23 may be formed to contain various materials. For example, the active layer 23 may contain an inorganic semiconductor material such as amorphous silicon or crystalline silicon. As another example, the active layer 23 may contain an oxide semiconductor. As another example, the active layer 23 may contain an organic semiconductor material. Hereinafter, for convenience of explanation, the active layer 23 is formed of amorphous silicon will be described in detail.

The active layer 23 may be formed by forming an amorphous silicon film on the buffer layer 22, crystallizing the amorphous silicon film into a polycrystalline silicon film, and patterning the polycrystalline silicon film. The active layer 23 is doped with impurities in the source region 23C and the drain region 23A depending on the type of the TFT, such as a driving TFT (not shown) and a switching TFT (not shown).

On the upper surface of the gate insulating layer 24, a gate electrode 25 corresponding to the active layer 23 and an interlayer insulating layer 26 for embedding the gate electrode 25 are formed.

After the contact hole H1 is formed in the interlayer insulating layer 26 and the gate insulating layer 24, the source electrode 27B and the drain electrode 27A are formed on the interlayer insulating layer 26 in the source region 23C and the drain region 23A.

A passivation film 27 is formed on the upper portion of the thin film transistor thus formed and a pixel electrode 28A of the organic light emitting element 28 is formed on the passivation film 27. [ This pixel electrode 28A is contacted to the drain electrode 27A of the TFT by the via hole H2 formed in the passivation film 27. [ The passivation film 27 may be formed of an inorganic material and / or organic material, a single layer, or two or more layers. The passivation film 27 may be formed of a planarization film so that the top surface is flat regardless of the bending of the bottom film, As shown in Fig. It is preferable that the passivation film 27 is formed of a transparent insulator so as to achieve a resonance effect.

After the pixel electrode 28A is formed on the passivation film 27, the pixel defining film 29 is formed of an organic material and / or an inorganic material so as to cover the pixel electrode 28A and the passivation film 27, So that the electrode 28A is opened to be exposed.

An intermediate layer 28B and a counter electrode 28C are formed on at least the pixel electrode 28A.

The pixel electrode 28A functions as an anode electrode and the counter electrode 28C functions as a cathode electrode. Of course, the polarities of the pixel electrode 28A and the counter electrode 28C may be reversed.

The pixel electrode 28A and the counter electrode 28C are insulated from each other by the intermediate layer 28B and voltages of different polarities are applied to the intermediate layer 28B so that light is emitted from the organic light emitting layer.

The intermediate layer 28B may have an organic light emitting layer. As another alternative, the intermediate layer 28B may include an organic emission layer, and may further include a hole injection layer (HIL), a hole transport layer, an electron transport layer, And an electron injection layer may be further included. The present embodiment is not limited to this, and the intermediate layer 28B may include an organic light emitting layer and may further include various other functional layers (not shown).

At this time, the intermediate layer 28B may be formed through the manufacturing apparatus (not shown) of the display device described above.

On the other hand, one unit pixel is composed of a plurality of sub-pixels, and a plurality of sub-pixels can emit light of various colors. For example, the plurality of sub-pixels may have sub-pixels emitting red, green, and blue light, respectively, and may have sub-pixels (not shown) emitting red, green, blue, and white light.

Meanwhile, the thin film encapsulation layer E may include a plurality of inorganic layers, or may include an inorganic layer and an organic layer.

The organic layer of the thin film encapsulating layer (E) may be a single film or a laminated film formed of a polymer and preferably formed of any one of polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene and polyacrylate. More preferably, the organic layer may be formed of polyacrylate, and specifically, a monomer composition containing a diacrylate monomer and a triacrylate monomer may be polymerized. The monomer composition may further include a monoacrylate monomer. Further, the monomer composition may further include a known photoinitiator such as TPO, but is not limited thereto.

The inorganic layer of the thin-film encapsulating layer (E) may be a single film or a laminated film containing a metal oxide or a metal nitride. Specifically, the inorganic layer may comprise any one of _{SiNx, Al 2 O 3, SiO} 2, TiO 2.

The uppermost layer exposed to the outside of the thin film encapsulation layer (E) may be formed of an inorganic layer to prevent moisture permeation to the organic light emitting element.

The thin film encapsulation layer (E) may include at least one sandwich structure in which at least one organic layer is interposed between at least two inorganic layers. As another example, the thin film encapsulation layer (E) may include at least one sandwich structure in which at least one inorganic layer is interposed between at least two organic layers. As another example, the thin-film encapsulation layer (E) may include a sandwich structure in which at least one organic layer is interposed between at least two inorganic layers, and a sandwich structure in which at least one inorganic layer is interposed between at least two organic layers .

The thin film encapsulation layer E may include a first inorganic layer, a first organic layer, and a second inorganic layer sequentially from the top of the organic light emitting element 28.

As another example, the thin film encapsulation layer E may include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, and a third inorganic layer sequentially from the top of the organic light emitting element 28.

As another example, the thin film encapsulation layer (E) may include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, a third inorganic layer, and a third organic layer sequentially from the top of the organic light- An organic layer, and a fourth inorganic layer.

A halogenated metal layer including LiF may be further included between the organic light emitting element 28 and the first inorganic layer. The metal halide layer can prevent the organic light emitting diode 28 from being damaged when the first inorganic layer is formed by a sputtering method.

The first organic layer may have a smaller area than the second inorganic layer, and the second organic layer may have a smaller area than the third inorganic layer.

Accordingly, the display device 20 includes the intermediate layer 28B that forms a precise pattern, and the intermediate layer 28B is formed by being deposited at the correct position, thereby enabling accurate image realization. In addition, the display device 20 exhibits a uniform quality according to continuous production by forming a constant pattern even when the intermediate layer 28B is repeatedly formed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the exemplary embodiments, and that various changes and modifications may be made therein without departing from the scope of the present invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

100: mask frame assembly 130:
110: frame 131: first sub pattern unit
111: opening portion 132: second sub pattern portion
120:

Claims (20)

A frame having an opening;
A body coupled to the frame; And
A first subpattern portion connected to the body portion and surrounded by the body portion and having a first crystal grain size; and a second subpattern portion disposed on the first subpattern portion and having a second crystal grain size smaller than the first crystal grain size, And a pattern portion including a second sub-pattern portion having a crystal grain size,
Wherein the pattern portion includes a plurality of pattern holes for passing the deposition material,
Wherein the pattern holes penetrate the first sub-pattern portion and the second sub-pattern portion. The method according to claim 1,
The body portion having a first thickness,
The first sub-pattern portion has a second thickness,
The second subpattern having a third thickness,
Wherein the first thickness is thicker than the combined thickness of the second thickness and the third thickness. 3. The method of claim 2,
The first thickness is 10 [mu] m to 50 [mu] m,
And the thickness of the second thickness plus the third thickness is 5 占 퐉 to 20 占 퐉. The method according to claim 1,
Wherein the body portion and the first subpattern portion comprise at least one of an invar alloy and a super invar alloy manufactured by rolling. The method according to claim 1,
Wherein the second subpattern comprises at least one of an invar alloy and a super invar alloy made by electroforming. The method according to claim 1,
Wherein the pattern hole is tapered such that its cross section is wider from the first sub-pattern portion to the second sub-pattern portion. Preparing a mask base material produced by rolling;
Half-etching a portion of the mask base material on one side of the mask base material to form a first sub-pattern portion;
Attaching an insulating film to the body portion on one side of the mask base material excluding the first sub pattern portion and attaching a conductor to the other side opposite to the one side of the mask base material;
Patterning the second subpattern on the first subpattern by performing electroforming;
Separating the insulating thin film and the conductor from the mask base material; And
And forming a plurality of pattern holes through the first and second subpatterns by irradiating a laser beam onto the second subpatterns. 8. The method of claim 7,
Wherein the half-etching is performed through wet-etching. ≪ RTI ID = 0.0 > 11. < / RTI > 8. The method of claim 7,
The body portion having a first thickness,
The first sub-pattern portion has a second thickness,
The second subpattern having a third thickness,
Wherein the first thickness is greater than the combined thickness of the second thickness and the third thickness. 8. The method of claim 7,
Wherein the mask preform and the second subpattern comprise at least one of an invar alloy and a super invar alloy. 8. The method of claim 7,
Wherein the grain size of the mask base material is larger than the grain size of the second sub-pattern portion. 8. The method of claim 7,
Further comprising coupling the body portion to a frame having an opening,
Wherein the plurality of pattern holes communicate with the opening. 8. The method of claim 7,
Wherein the laser beam is irradiated to the surface of the second subpattern portion along the direction from the second subpattern portion toward the first subpattern portion. 8. The method of claim 7,
Wherein the pattern holes are tapered such that the cross section of the pattern holes becomes wider from the first subpattern portion to the second subpattern portion. Loading the display substrate and the mask frame assembly into the chamber; And
And depositing the deposition material on the display substrate by passing the deposition material sprayed from the deposition source to the mask frame assembly,
The mask frame assembly includes:
A first sub-pattern portion having a first crystal grain size, the first sub-pattern portion being surrounded by the body portion, the first sub-pattern portion being connected to the body portion, And a pattern portion including a second sub-pattern portion disposed on the pattern portion and having a second crystal grain size smaller than the first crystal grain size,
Wherein the pattern portion includes a plurality of pattern holes for passing the deposition material,
And the pattern hole penetrates through the first sub-pattern portion and the second sub-pattern portion. 16. The method of claim 15,
The body portion having a first thickness,
The first sub-pattern portion has a second thickness,
The second subpattern having a third thickness,
Wherein the first thickness is thicker than the sum of the second thickness and the third thickness. 17. The method of claim 16,
The first thickness is 10 [mu] m to 50 [mu] m,
And the thickness of the second thickness and the third thickness is 5 占 퐉 to 20 占 퐉. 16. The method of claim 15,
Wherein the body portion and the first subpattern portion comprise at least one of an invar alloy and a super invar alloy manufactured by rolling. 16. The method of claim 15,
Wherein the second subpattern comprises at least one of an invar alloy and a super invar alloy produced by electroforming. ≪ RTI ID = 0.0 > 21. < / RTI > 16. The method of claim 15,
Wherein the pattern hole is tapered so that its cross section becomes wider from the first sub pattern part to the second sub pattern part.

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