KR20190008389A - Substrate temperature stabilizing device - Google Patents

Abstract

Disclosed are an apparatus and a method for stabilizing a substrate temperature. The disclosed apparatus for stabilizing the substrate temperature includes a measuring unit measuring an output temperature of a chemical liquid in contact with a substrate or an interface contacted with the substrate and the chemical liquid. The measuring unit includes: an emissivity setting part to which an emissivity of the chemical liquid or the interface is inputted while the chemical liquid is supplied to the substrate; a radiation energy input part into which radiation energy radiated from the chemical liquid or the interface is input; and a calculation part calculating the temperature of the chemical liquid or the interface through the emissivity and the radiant energy.

Description

[0001] SUBSTRATE TEMPERATURE STABILIZING DEVICE [0002]

The present invention relates to an apparatus for stabilizing a substrate temperature, and more particularly, to an apparatus for stabilizing a substrate temperature when a chemical liquid is brought into contact with a substrate in a single wafer type wet etching or cleaning process for treating a surface of the substrate with a chemical liquid, To a substrate temperature stabilizing apparatus and method capable of optimizing a processing temperature of a substrate by directly measuring the temperature of a chemical liquid brought into contact with the substrate and maintaining a temperature condition optimized for substrate processing.

Generally, the wet process includes a thin film formed on a substrate by contact with a liquid chemical on a substrate such as a silicon wafer, a layer formed on the substrate, a contamination formed on the substrate, Substrate surface and the like.

For example, the wet process may include a wet etch process to remove a thin film formed on a substrate, a layer formed on the substrate, and the like.

As another example, the wet process may include a cleaning process to clean contaminants, substrate surfaces, and the like formed on the substrate.

As another example, the wet process may include a photoresist removal process to remove the photoresist (PR) applied to the substrate.

In the wet etching or cleaning process of such a wet process, when the high temperature chemical liquid is brought into contact with the substrate, the temperature of the substrate or the temperature of the contacted chemical liquid must be precisely controlled.

Related Prior Art Korean Patent Registration No. 10-1037179 (Registered on May 19, 2011, entitled "Device and method for detecting malfunction of temperature controller in substrate processing apparatus") is available.

SUMMARY OF THE INVENTION An object of the present invention is to directly measure the temperature at which an interface between a substrate and a chemical liquid comes into contact with the substrate or the temperature at which the chemical liquid comes in contact with the substrate when the chemical liquid comes into contact with the substrate in a single wafer type wet etching or cleaning process, Thereby optimizing the processing temperature of the substrate and maintaining the temperature condition optimized for the substrate processing.

The apparatus for stabilizing a substrate temperature according to the present invention comprises: a measuring unit for measuring an output temperature of a chemical liquid in contact with a substrate or an interface at which the chemical liquid comes in contact with the substrate; Wherein the measurement unit comprises: an emissivity setting unit to which the chemical solution or the emissivity at the interface is input when the chemical solution is supplied to the substrate; A radiation energy input unit into which the chemical solution or radiation energy radiated from the interface is input; And a calculation unit for calculating the calculated temperature of the chemical liquid or the interface through the emissivity and the radiation energy; And a control unit.

The apparatus for stabilizing a substrate temperature according to the present invention is an apparatus for stabilizing a substrate temperature when a chemical liquid contacts a substrate in a single wafer type wet etching or cleaning process for treating a surface of the substrate using a chemical liquid, By directly measuring the temperature, the processing temperature of the substrate can be optimized and the temperature condition optimized for substrate processing can be maintained.

In addition, the present invention can solve the processing imbalance of the substrate due to the overheating of the substrate (overheating of the substrate due to heating of the substrate or the chemical liquid) by directly measuring the temperature of the interface between the chemical liquid or the substrate and the chemical liquid.

Further, the present invention can be applied to a large-area substrate, so that the processing temperature of the entire substrate can be maintained substantially uniform.

Further, according to the present invention, the control temperature of the processing temperature can be improved by directly measuring the calculation temperature of the interface between the substrate and the substrate where the single wafer type wet etching or cleaning process is performed or the chemical liquid contacting the substrate.

Further, the present invention can suppress or prevent light scattering and interference with the chemical liquid by measuring the temperature at the opposite side of the interface between the substrate and the chemical liquid.

In addition, the present invention can suppress or prevent a change in the concentration of the chemical solution or the evaporation of the chemical solution on the substrate by heating the substrate or the chemical solution on the opposite side of the interface where the chemical solution comes into contact.

In addition, the present invention can prevent or suppress the change of the concentration of the chemical liquid or the chemical liquid by heating the substrate or the chemical liquid after supplying the chemical liquid at normal temperature to the substrate.

1 is a structural view illustrating a substrate temperature stabilizing apparatus according to an embodiment of the present invention.
2 is a schematic diagram showing a substrate temperature stabilizing apparatus according to an embodiment of the present invention.
FIG. 3 is a graph showing an infrared wavelength range in which a radiant energy is measured according to a temperature change in a method of stabilizing a substrate temperature according to an embodiment of the present invention.
4 is a flowchart illustrating a substrate temperature stabilization method according to an embodiment of the present invention.
FIG. 5 is a structural diagram showing an experimental apparatus for detecting the characteristics of a measurement unit for a chemical solution in a method of stabilizing a substrate temperature according to an embodiment of the present invention. FIG.
6 is a structural diagram showing an experimental apparatus for detecting a characteristic of a measurement unit with respect to a substrate immersed in a chemical solution in a method of stabilizing a substrate temperature according to an embodiment of the present invention.
7 is a structural view showing an experimental apparatus for detecting a characteristic of a measurement unit with respect to an interface between a substrate and a chemical liquid in a method of stabilizing a substrate temperature according to an embodiment of the present invention.
8 is a structural diagram showing an experimental apparatus for confirming the characteristics of a measurement unit in the method of stabilizing the substrate temperature according to an embodiment of the present invention.

Hereinafter, an embodiment of a substrate temperature stabilizing apparatus and method according to the present invention will be described with reference to the accompanying drawings. In this process, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation.

In addition, the terms described below are defined in consideration of the functions of the present invention, which may vary depending on the intention or custom of the user, the operator. Therefore, definitions of these terms should be made based on the contents throughout this specification.

FIG. 1 is a structural view illustrating a substrate temperature stabilizing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic view illustrating a substrate temperature stabilizing apparatus according to an embodiment of the present invention. FIG. 3 is a graph showing an infrared wavelength range in which a radiant energy is measured according to a temperature change in the substrate temperature stabilization method according to an example. FIG.

1 to 3, an apparatus for stabilizing a substrate temperature according to an embodiment of the present invention includes a substrate W, a substrate W, a substrate W, It is possible to measure the calculation temperature at the interface between the chemical liquid C or the substrate W that has come into contact with the substrate W and the chemical liquid C when the chemical liquid C contacts the substrate W.

The apparatus for stabilizing a substrate temperature according to an embodiment of the present invention includes a measurement unit 10.

The measurement unit 10 measures the calculated temperature at the interface between the chemical liquid C or the substrate W which contacts the substrate W and the chemical liquid C. [ A plurality of measurement units 10 can be provided to measure the temperature at various points on the substrate W. [

The measurement unit 10 may include a radiation rate setting unit 11, a radiation energy input unit 15, and a calculation unit 17.

The emissivity setting unit 11 receives the emissivity at the interface where the chemical solution C or the substrate W and the chemical solution C are in contact with each other. The emissivity is predetermined according to the kind of the chemical liquid.

For example, the emissivity at the interface between the chemical solution C or the substrate W and the chemical solution C is separately measured while the chemical solution is supplied to the substrate W, and the measured emissivity is measured by the emissivity setter 11, Lt; / RTI > This emissivity is a complex emissivity in which the energy radiated from the interface between the chemical solution C or the substrate W and the chemical solution C passes through the substrate W. [

The radiation energy input unit 15 receives radiation energy radiated from the chemical liquid C or the interface.

For example, the radiant energy input unit 15 can input radiation energy radiated from the chemical liquid C or the interface and passing through the substrate W while the chemical liquid C is in contact with the substrate W. [

The calculating unit 17 calculates the calculated temperature of the chemical liquid C or the interface through the radiation rate input to the radiation rate setting unit 11 and the radiation energy input to the radiation energy input unit 15. [

The calculating unit 17 can calculate the calculated temperature using the absolute temperature T calculated according to the following equation (1).

[Equation 1]

here,

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being.

Where E (?, T) is the radiant energy input to the radiant energy input unit 15,

lambda is a predetermined infrared wavelength according to the radiation energy input section 15,

epsilon is the emissivity at the chemical liquid (C) or interface,

T is the absolute temperature,

h is the Plank constant,

c is the speed of light,

 k is the Boltzmann constant.

* By converting the calculated absolute temperature (T) into Celsius or Fahrenheit, the calculated temperature can be accurately measured.

The predetermined infrared wavelength is a constant predetermined according to the radiant energy input unit 15 and is predetermined according to the type of the measurement unit 10. [

Referring to FIG. 3, in a wavelength, all substances including black bodies emit radiant energy, but peak wavelengths differ from each other depending on temperature.

The radiation emitted from an object follows plank's law, and the lower the temperature, the more the peak wavelength shifts to the longer wavelength.

When the temperature of the chemical liquid (C) is 25 degrees Celsius, the wavelength capable of measuring radiation energy of 1 W / (m 2) (sr) (탆) or more is in the range of more than 4 μm and not more than 30 μm, to be.

Here, since it is difficult to measure the radiant energy at a wavelength of 4 탆 or less or a wavelength exceeding 30 탆, the wavelength is preset to an infrared wavelength exceeding 4 탆 and 30 탆 or less.

More specifically, the infrared wavelength may be predefined to be greater than or equal to 5 microns and less than 25 microns. At this time, the radiant energy input unit 15 may receive radiation energy of 2 W / (m 2) (sr) (탆) or more.

Further, the infrared wavelength may be set to be not less than 6 mu m and less than 23 mu m. At this time, the radiant energy input unit 15 may receive radiation energy of 3 W / (m 2) (sr) (탆) or more.

Further, the infrared wavelength may be set to be not less than 6 mu m and less than 19 mu m. At this time, the radiant energy input unit 15 may receive radiation energy of 4 W / (m 2) (sr) (탆) or more.

In addition, the infrared wavelength may be pre-set to more than 6 [mu] m and less than 18 [mu] m. At this time, the radiant energy input unit 15 may receive radiation energy of 5 W / (m 2) (sr) (탆) or more.

Further, the infrared wavelength can be preset to 7 mu m or more and 17 mu m or less. At this time, the radiant energy input unit 15 may receive radiation energy of 6 W / (m 2) (sr) (탆) or more.

In addition, the infrared wavelength can be preset to 7 탆 or more and 16 탆 or less. At this time, the radiant energy input unit 15 can receive radiation energy of 7 W / (m 2) (sr) (탆) or more.

Further, the infrared wavelength can be preset to be 8 占 퐉 or more and less than 14 占 퐉. At this time, the radiant energy input unit 15 can receive radiation energy of 8 W / (m 2) (sr) (탆) or more.

In addition, the infrared wavelength can be preset to 9 μm or more and 11 μm or less. At this time, the radiant energy input unit 15 may receive radiation energy of 9 W / (m 2) (sr) (탆) or more.

The measuring unit 10 described above may be composed of a radiation thermometer (pyrometer) which is spaced apart from the substrate W and calculates the calculation temperature through the chemical solution C or the radiation energy radiated from the interface and the infrared wavelength. The radiation temperature meter (Pyrometer) can easily calculate the calculated temperature by modulating the emissivity setting unit 11, the radiation energy input unit 15, and the calculating unit 17 described above. The measuring unit 10 composed of a radiation thermometer (Pyrometer) can be set to a desired emissivity value for each radiation thermometer (Pyrometer).

The measurement unit 10 described above may be provided apart from the substrate at an interface with respect to the substrate W. [ In this case, it is possible to correct the error of the calculated temperature caused by scattering of light and interference of light with respect to the chemical liquid (C).

Further, the above-described measuring unit 10 may be provided apart from the substrate on the opposite side of the interface with respect to the substrate W. [ In this case, by minimizing the influence of light scattering and light interference on the chemical liquid C, the error range of the calculated temperature can be minimized by suppressing or preventing the error of the calculated output temperature.

The apparatus for stabilizing a substrate temperature according to an embodiment of the present invention further includes a correction unit 20 and a control unit 30. [

The correction unit 20 heats the chemical liquid C which is separated from the substrate W and contacts the substrate W or the substrate W. [ The correction unit 20 is constituted by an infrared heater and can heat the substrate W. [

The correction unit 20 can supply the chemical liquid C at room temperature to the substrate W by heating the chemical liquid C that is in contact with the substrate W or the substrate W, And it is possible to suppress or prevent the change of the concentration of the chemical liquid (C) and the composition of the chemical liquid (C) upon heating.

The control unit (30) operates the correction unit (20) in correspondence with the calculated temperature measured by the measurement unit (10).

The control unit 30 may compare the calculated temperature with the predetermined processing temperature for processing the substrate W to control the heating operation of the correction unit 20 to the difference between the calculated temperature and the predetermined processing temperature.

For example, when the calculated temperature is included in the predetermined process temperature, the calculation temperature of the chemical liquid C or the interface can be continuously measured through the measurement unit 10.

If the calculated temperature is not included in the predetermined process temperature, the control unit 30 sets the output of the correction unit 20 in accordance with the difference between the calculated temperature and the predetermined process temperature so that the calculated temperature reaches the predetermined process temperature The temperature of the chemical liquid C which contacts the substrate W or the substrate W can be adjusted.

Thus, the process temperature necessary for the single wafer type wet etching or cleaning process can be stably maintained, and the precision of the single wafer type wet etching or cleaning process can be improved.

Particularly, according to an embodiment of the present invention, the (optional) process temperature is maintained constant in the wet etching process, whereby the substrate W can be etched to an accurate depth, and the process temperature is kept constant in the wet cleaning process, The etching solution or foreign matter remaining between the patterns can be stably removed.

Further, even if the process temperature is set to be higher than the boiling point, the chemical liquid C at normal temperature in contact with the substrate W can be heated and cleaned or cleaned. Particularly, when phosphoric acid is used as the chemical liquid (C), a single wafer type wet etching or cleaning process can be performed with the chemical liquid (C) at a boiling point of phosphoric acid or higher.

The apparatus for stabilizing a substrate temperature according to an embodiment of the present invention may further include a chamber 50.

The chamber 50 stably supports and holds the substrate W, and supplies the chemical solution C to the substrate W. [

Here, the substrate W is seated in the single-wafer chamber 50.

The single-wafer type chamber 50 supplies the chemical solution C to the substrate W which is placed in a single sheet to perform a single wafer type wet etching or cleaning process. In the processing of the substrate W, the chemical solution C The substrate W can be supplied, etched, cleaned, dried, and the like without movement of the substrate W, so that the single wafer type wet etching or cleaning process can be automated as well as the inline process.

The single wafer storage chamber 50 is easier to manage the processing state of the individual substrate W and the substrate W than the batch type chamber and prevents the contaminants from moving between the substrates W and minimizes the consumption amount of the chemical solution C can do.

In addition, the single wafer type chamber 50 is easier to replace the chemical liquid C in the single wafer type wet etching or cleaning process than the batch type chamber, and a new chemical solution C And it is easy to control the concentration of the chemical liquid (C).

Further, the single wafer type chamber 50 can ensure the uniformity of processing of the substrate W in correspondence with the enlargement of the substrate W as compared with the batch type chamber, and the manufacturing cost of the chamber 50 can be reduced.

Here, the batch type chamber deposits the substrate W in the chemical liquid C to perform a wet etching or cleaning process. For example, the batch type chamber can deposit a cassette (not shown) in which a plurality of substrates W are disposed in a chemical liquid C to perform a wet etching or cleaning process.

The chamber 50 may include a discharge portion 51 through which contaminants generated in the single wafer type wet etching or cleaning process are discharged. The discharge unit 51 forms a discharge path for contaminants such as fumes or foreign substances generated in the single wafer type wet etching or cleaning process in accordance with the contact between the substrate W and the chemical liquid C. [

A separate suction force is provided to the discharge portion 51 to suck and discharge contaminants.

The discharge portion 51 may be formed along the edge of the substrate W that is seated in the chamber 50.

In addition, the chamber 50 may be provided with a seating part 53 on which the substrate W is seated.

The substrate W can be stably supported through the seating portion 53. [

Reference numeral 54 denotes a spacing part formed by the seating part 53 so as to protrude and support the substrate W from the seating part 53. The spacer 54 supports the edge of the substrate W, thereby preventing damage such as scratches on the surface of the substrate W. [

In addition, the chamber 50 may be provided with a discharge portion 55 through which the chemical liquid C is discharged.

Here, the discharge part 55 is provided apart from the substrate W, and makes the chemical liquid C come into contact with the substrate W. The discharging portion 55 can inject the chemical liquid C into the substrate W in a mist form.

The position of the discharging portion 55 is not limited and may be provided on the upper surface of the substrate W or on the lower surface of the substrate W. [

However, in the case where the discharge portion 55 is provided on the lower surface of the substrate W, the removal of contaminants generated in the single wafer type wet etching or cleaning process is more effective than the discharge portion 55 provided on the upper surface of the substrate W So that contamination of the chemical liquid (C) by scattering can be suppressed, and the consumption amount of the chemical liquid (C) can be reduced.

The chamber 50 may also include a diffusion portion 57 for diffusing and applying the chemical liquid C supplied to the substrate W. [

The diffusing portion 57 rotates the seating portion 53 on which the substrate W is placed so that the chemical liquid C supplied to the substrate W is diffused by the centrifugal force on the substrate W, As shown in FIG.

The apparatus for stabilizing the substrate temperature according to the embodiment of the present invention adjusts the temperature of the chemical liquid C that is separated from the upper surface of the substrate W and contacts the substrate W or the substrate W through the correction unit 20 The chemical liquid C at room temperature can be supplied in the form of a mist to the lower surface of the substrate W and the single wafer type wet etching or cleaning process can be performed even at a high temperature exceeding the boiling point of the chemical liquid C. [

Further, even when the chemical liquid (C) is introduced, there is no heat loss due to the progress of the single wafer type wet etching or cleaning process, and the temperature required for the single wafer type wet etching or cleaning process can be easily controlled to maintain the optimized temperature condition.

Hereinafter, a substrate temperature stabilization method according to an embodiment of the present invention will be described.

FIG. 4 is a flowchart illustrating a method of stabilizing a substrate temperature according to an embodiment of the present invention. FIG. 5 is a flow chart illustrating a method of stabilizing a temperature of a substrate according to an embodiment of the present invention, FIG. 6 is a structural view showing an experimental apparatus for detecting the characteristics of a measurement unit with respect to a substrate immersed in a chemical solution in the method of stabilizing a substrate temperature according to an embodiment of the present invention, and FIG. 7 is a cross- FIG. 8 is a schematic view illustrating an apparatus for stabilizing a temperature of a substrate according to an embodiment of the present invention. FIG. And an experimental apparatus for confirming the characteristics of the measurement unit.

4 to 8, the substrate temperature stabilization method according to an embodiment of the present invention can measure radiant energy radiated from the interface between the chemical solution C or the chemical solution C and the substrate W .

First, an experiment is conducted to derive the characteristics of the measurement unit 10 with respect to the substrate W.

In this experiment, a silicon wafer was used as the substrate W. Alternatively, the substrate W may be silicon carbide (SiC), sapphire wafer, quartz, or the like.

For this experiment, the measurement unit 10 was placed on one side of the substrate W, the black body and the heater 63 were arranged on the other side of the substrate W in turn, and then the heating heater 63 The blackbody is heated and the radiant energy is measured according to the heating temperature.

In the control group, the measurement unit 10 is disposed on one side of the black body, the heater 63 is disposed on the other side of the black body, and the black body is heated through the heater 63, Measure the radiant energy according to temperature.

As a result of the experiment, substantially the same radiant energy is measured in the experimental group and the control group, and the substrate W is transmitted with the infrared wavelength.

The type of the substrate W is changed between the measuring unit 10 and the heating heater 63 and the transmission characteristics are examined. As a result, it is found that even when the film quality or thickness of the substrate W is different, .

Further, an experiment for deriving the characteristics of the measurement unit 10 with respect to the chemical solution C is performed.

In this experiment, 85 wt% phosphoric acid was used as the chemical liquid (C).

For this experiment, the test water tank 60 is filled with the chemical solution C, and the measurement unit 10 is placed apart from the surface of the chemical solution C. The chemical solution C is heated through the heating heater 63 and the emissivity of the chemical solution C is measured while changing the temperature of the chemical solution C. At this time, the temperature of the chemical liquid (C) can be measured by immersing the thermocouple (61) in the chemical liquid (C).

As a result of the experiment, it was confirmed that the emissivity of the chemical liquid (C) was kept substantially constant regardless of the temperature.

In addition, the characteristic of the measuring unit 10 with respect to the chemical liquid C used in the photoresist removing process also exhibits the property that the emissivity of the chemical liquid C is kept substantially constant regardless of the temperature.

Further, an experiment is conducted to derive the characteristics of the measurement unit with respect to the substrate W immersed in the chemical solution C.

For this experiment, the test water tank 60 is filled with the chemical solution C, and the measurement unit 10 is placed apart from the surface of the chemical solution C.

The chemical liquid C is heated through the heating heater 63 and the substrate W immersed in the chemical liquid C is moved from the surface of the chemical liquid C by depth, The temperature of the substrate W and the emissivity of the chemical liquid C are measured and shown in Table 1 below.

At this time, the temperature of the substrate W can be measured by connecting the thermocouple 61 to the substrate W.

As a result of the experiment, there is a characteristic that the temperature of the substrate W and the emissivity of the chemical liquid C are kept substantially constant though there is a difference in value from the result of only the chemical liquid C measurement.

Substrate depth
(mm)
Chemical solution set temperature (℃) 50 60 70 80 90 100 110 -One Substrate temperature
(° C) - - 74.0 83.2 94.4 108.0 117.8 Emissivity - - 0.77 0.77 0.77 0.76 0.75 -2 Substrate temperature
(° C) - - 74.4 85.0 95.0 107.5 118.3 Emissivity - - 0.77 0.77 0.76 0.76 0.75 -5 Substrate temperature
(° C) - - 76.2 86.0 96.0 105.3 116.6 Emissivity - - 0.77 0.77 0.77 0.77 0.77 -10
Substrate temperature
(° C) 53.0 64.0 76.5 86.1 96.3 107.3 120.0 Emissivity 0.79 0.77 0.77 0.77 0.77 0.76 0.76 -20 Substrate temperature
(° C) 53.0 64.0 - - - - - Emissivity 0.77 0.78 - - - - -

Experiments are also conducted to derive the characteristics of the measurement unit with respect to the interface between the substrate W and the chemical liquid C. Here, the chemical liquid (C) is a mixture of 85 wt% phosphoric acid and the chemical liquid (C) Of phosphoric acid is about 39 wt%, and when the ratio of the chemical solution (C): pure water is 1: 1, about 53 wt% of phosphoric acid is contained.

For this experiment, the test water tank 60 is filled with the chemical solution C, and the measurement unit 10 is placed apart from the surface of the chemical solution C.

The chemical liquid C is heated through the heating heater 63 and the temperature of the chemical liquid C is adjusted while changing the type of the chemical liquid C while the substrate W is in contact with the surface of the chemical liquid C The temperature of the substrate W and the emissivity of the chemical liquid C are measured and shown in Table 2 below.

At this time, the temperature of the substrate W can be measured by connecting the thermocouple 61 to the substrate W.

As a result of the experiment, the emissivity changes while the concentration of the chemical solution C changes, but the emissivity remains substantially constant for the same concentration.

Chemical solution
(Drug solution: pure water) Chemical solution set temperature (℃) 60 70 80 90 100 110 Pure water 100% Substrate temperature
(° C) 62 72 - - - - Emissivity 0.76 0.76 - - - - 1: 2 Substrate temperature
(° C) - 71.8 82.4 - - - Emissivity - 0.73 0.73 - - - 1: 1 Substrate temperature
(° C) - 69.9 82.1 - - - Emissivity - 0.72 0.72 - - - Chemical solution 100% Substrate temperature
(° C) - 73.0 86.0 95.5 108.3 118.3 Emissivity - 0.68 0.68 0.67 0.67 0.67

An experiment for deriving the characteristics of the measurement unit 10 is performed for changing the film. For this experiment, a trace amount (less than 0.5 mm thickness) of the chemical solution C is applied to the substrate W in the test housing 70, And the test block 80 is spaced apart from the interface between the substrate W and the chemical solution C and the measurement unit 10 is disposed on the opposite side of the interface.

Then, the temperature of the test block 80 and whether or not the chemical liquid C is in contact with the test block 80 is measured. At this time, the temperature of the substrate W can be measured by connecting the thermocouple 61 to the substrate W.

As a result of the experiment, in a state in which the chemical solution C is in contact, the temperature is maintained substantially constant regardless of whether the test block 80 is disposed or not. In a state in which the chemical liquid C is removed, a characteristic that the temperature varies depending on whether the test block 80 is disposed or not is displayed.

In summary,

First, in the room temperature region, the substrate W has a characteristic of transmitting infrared wavelengths.

Second, even if other materials are deposited on the substrate W, the characteristic of transmitting infrared wavelengths appears.

Third, it has substantially the same emissivity regardless of the temperature of the chemical liquid (C) and the amount of the chemical liquid (C) with respect to the chemical liquid (C) of the same concentration.

Fourthly, the amount of the chemical liquid (C) shows the characteristic of emitting the infrared wavelength even if a trace exists at the measuring point.

Based on the above experimental results, the substrate temperature stabilization method according to an embodiment of the present invention includes a measuring step S1 and a calculating step S2.

The measuring step S1 measures the radiant energy radiated from the interface between the chemical liquid C or the substrate W contacting the substrate W and the chemical liquid C. [ Here, the measurement step S1 measures the radiant energy radiated from the chemical liquid C or the interface through the measurement unit 10. [ The measured radiant energy is input to the radiant energy input unit 15. In the measurement step S1, the emissivity at the interface where the chemical solution C or the substrate W and the chemical solution C are in contact with each other while the chemical solution is supplied to the substrate W is separately measured, (Not shown).

The calculating step S2 calculates the calculated temperature of the chemical liquid C or the interface using the measured radiant energy through the measuring step S1.

Here, in the calculation step S2, the calculation temperature can be calculated using the absolute temperature T calculated according to the following equation (2).

&Quot; (2) "

here,

이고,

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being.

Where E (?, T) is the radiant energy measured through the measuring step S1,

is a predetermined infrared wavelength according to the radiant energy input unit 15 to which the radiant energy is input,

epsilon is the emissivity at the chemical liquid (C) or interface,

T is the absolute temperature,

h is the Plank constant,

c is the speed of light,

k is the Boltzmann constant.

Thus, by converting the calculated absolute temperature T to the Celsius temperature or the Fahrenheit temperature, the calculated temperature can be accurately measured.

At this time, the infrared wavelength may be set to be more than 4 μm but not more than 30 μm.

The radiation emitted from an object follows plank's law, and the lower the temperature, the more the peak wavelength shifts to the longer wavelength.

When the temperature of the chemical liquid C is 25 degrees Celsius (room temperature region), the wavelength capable of measuring radiation energy of 1 W / (m 2) (sr) (탆) or more is in the range of 4 탆 to 30 탆, The peak wavelength is 10 탆.

Here, since it is difficult to measure the radiant energy at a wavelength of 4 탆 or less or a wavelength exceeding 30 탆, the infrared wavelength can be set to be more than 4 탆 and less than 30 탆.

More specifically, the infrared wavelength may be predefined to be greater than or equal to 5 microns and less than 25 microns. At this time, the measuring step S1 can measure radiation energy of 2 W / (m 2) (sr) (탆) or more.

Further, the infrared wavelength may be set to be not less than 6 mu m and less than 23 mu m. At this time, the measuring step S1 can measure radiation energy of 3 W / (m 2) (sr) (탆) or more.

Further, the infrared wavelength may be set to be not less than 6 mu m and less than 19 mu m. At this time, the measurement step S1 can measure radiation energy of 4 W / (m 2) (sr) (탆) or more.

In addition, the infrared wavelength may be pre-set to more than 6 [mu] m and less than 18 [mu] m. At this time, the measuring step S1 can measure radiation energy of 5 W / (m 2) (sr) (탆) or more.

Further, the infrared wavelength can be preset to 7 mu m or more and 17 mu m or less. At this time, the measuring step S1 can measure a radiation energy of 6 W / (m 2) (sr) (탆) or more.

In addition, the infrared wavelength can be preset to 7 탆 or more and 16 탆 or less. At this time, the measuring step S1 can measure radiation energy of 7 W / (m 2) (sr) (탆) or more.

Further, the infrared wavelength can be preset to be 8 占 퐉 or more and less than 14 占 퐉. At this time, the measuring step S1 can measure radiation energy of 8 W / (m 2) (sr) (탆) or more.

In addition, the infrared wavelength can be preset to 9 μm or more and 11 μm or less. At this time, the measuring step S1 can measure radiation energy of 9 W / (m 2) (sr) (탆) or more.

The substrate temperature stabilization method according to an embodiment of the present invention may further include a comparison step (S3).

The comparison step S3 compares the predetermined process temperature for processing the substrate W with the calculated temperature through the calculation step S2.

The predetermined process temperature may be set to a temperature value or a temperature range depending on the processing conditions of the single wafer wet etching or cleaning process.

The temperature of the chemical liquid C contacting the substrate W or the substrate can be adjusted according to the result of the comparison step S3.

More specifically, when the calculated temperature is included in the predetermined process temperature through the comparison step (S3), the measurement step (S1) is executed again.

In addition, when the calculated temperature is not included in the predetermined process temperature through the comparison step (S3), it further includes a correction step (S4).

The correction step S4 adjusts the temperature of the chemical liquid C that contacts the substrate W or the substrate W according to the difference between the calculated temperature and the predetermined process temperature.

The comparison step (S3) and the correction step (S4) are performed through the correction unit (20) and the control unit (30).

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. I will understand.

Accordingly, the true scope of protection of the present invention should be defined by the claims.

W: substrate C: chemical solution 10: measuring unit
11: Emissivity setting unit 15: Radiation energy input unit 17:
20: correction unit 30: control unit 50: chamber
51: discharge part 53: seat part 54:
55: Discharging section 57: Diffusion section 60: Test tank
61: thermocouple 63: heating heater 70: test housing
80: test block S1: measuring step S2: calculating step
S3: comparison step S4: correction step

Claims (1)

A measurement unit for measuring an output temperature of a chemical liquid in contact with the substrate or an interface at which the chemical liquid comes in contact with the substrate; / RTI >
Wherein the measuring unit comprises:
An emissivity setting unit to which the chemical solution or the emissivity at the interface is input when the chemical solution is supplied to the substrate;
A radiation energy input unit into which the chemical solution or radiation energy radiated from the interface is input;
A calculating unit for calculating a temperature of the chemical solution or the interface through the emissivity and the radiation energy;
A correction unit for heating the chemical liquid that is spaced apart from the substrate and is in contact with the substrate or the substrate; And
A control unit for operating the correction unit corresponding to the calculated temperature measured by the measurement unit; / RTI >
Wherein the correction unit is a heater,
The chamber is provided with a discharge portion through which the chemical liquid is discharged,
Wherein the discharging portion is disposed below the substrate to supply a chemical solution to a lower surface of the substrate,
And the temperature of the chemical liquid is corrected by using a heater disposed on the upper side of the substrate.

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