KR20180135717A - Solid state image sensing device for isolate area using deep-well - Google Patents

Abstract

Disclosed is a solid state imaging device for isolating a region using a deep-well. The solid state imaging device comprises: a substrate; a pixel region formed of a plurality of pixels provided on the substrate; and an isolation deep-well formed in the substrate to surround the entire bottom of the pixel region. According to the solid state imaging device, by forming the deep-well for isolation at the bottom of the pixel region or a circuit region, the solid state imaging device may prevent that light with long wavelength from affecting noise between pixels through a substrate bulk structure or between the pixel region and the circuit region.

Description

SOLID STATE IMAGE SENSING DEVICE FOR ISOLATE AREA USING DEEP-WELL BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-

More particularly, the present invention relates to a solid-state imaging device configured to separate a pixel area and a circuit area, and more particularly, to a solid-state imaging device using a deep- To a solid-state image pickup device for separation.

Fig. 1 is a plan view of a solid-state image pickup device having a region separation structure according to the prior art, and Fig. 2 is a side sectional view of a solid-state image pickup device having a region-

1 and 2, the conventional solid-state image pickup device 1 is divided into the pixel region 20 and the circuit region 30. [

An isolation well 40 is formed between both sides in order to prevent the pixel data of the pixel region 20 and the circuit data of the circuit region 30 from influencing each other.

As shown in FIG. 2, in the pixel region 20, light having a long wavelength such as infrared rays reaches the substrate 10. [ This long wavelength light has a noise effect between the pixels 20a in the lower end region of the well 21. [

Also, the pixel region 20 and the circuit region 30 can mutually affect each other.

When the pixel data and the circuit data are influenced each other through the bulk configuration of the substrate 10, distortion occurs in the pixel data sensitive to noise.

Therefore, it is necessary to prevent the influence of noise between the pixels 20a and the noise between the pixel region 20 and the circuit region 30 through the bulk structure of the substrate 10 with light of a long wavelength.

10-2006-0006873 10-2004-0042771

It is an object of the present invention to provide a solid-state image pickup device for area separation using a deep-well.

The solid-state imaging device for performing the region separation using the dip-well according to the first embodiment of the present invention includes a substrate; A pixel region formed by a plurality of pixels provided on the substrate; And an isolation deep well formed in the substrate to surround the entire bottom of the pixel region.

The device may further include an isolation well formed between the pixel region and both side surfaces of the circuit region to separate the pixel region from the circuit region on the substrate.

The solid-state image pickup device may be a CCD (charge coupled device) device.

The solid-state imaging device for performing the region separation using the dip-well according to the second embodiment of the present invention includes a substrate; A pixel region provided on the substrate; A circuit region provided on the substrate; An isolation well formed between the pixel region and both side surfaces of the circuit region to separate circuit regions from adjacent pixel regions; And an isolation deep well formed in the substrate to surround the entire lower portion of the circuit region.

Here, the solid-state image pickup device may be a CCD (charge coupled device) device.

According to the solid-state image pickup device for performing the region separation using the above-described dip-well, it is possible to form a deep-well for isolation at the lower end of the pixel region or the circuit region, There is an effect that it is possible to prevent the noise from affecting each other or between the pixel region and the circuit region.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a plan view of a solid-state image pickup device having a region separation structure according to a conventional technique. FIG.
2 is a side cross-sectional view of a solid-state image pickup device having a region separation structure according to the prior art.
3 is a side cross-sectional view of a solid-state image pickup device for area separation using a dip-well according to the first embodiment of the present invention.
4 is a side cross-sectional view of a solid-state imaging device for area separation using a dip-well according to a second embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail to the concrete inventive concept. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

The terms first, second, A, B, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a side cross-sectional view of a solid-state image pickup device for area separation using a dip-well according to the first embodiment of the present invention.

3, a solid-state image pickup device 100 for performing region separation using a deep-well according to the first embodiment of the present invention includes a substrate 110, a pixel area 120, A circuit area 130, an isolation well 140, and an isolation deep well 150. In one embodiment,

The solid-state image pickup device 100 for performing the region separation using the deep-well may form an isolation dip-well 150 at the lower end of the pixel region 120 so that long wavelength light is transmitted through the substrate region 120 Of the pixels 120a of the pixels 120a.

In addition, the isolation dip-well 150 is configured to prevent noise from affecting the pixel region 120 and the circuit region 130 through the substrate bulk configuration with the isolation well 140.

Here, the solid-state image pickup device 100 for performing the region separation using the deep-well may be a CCD (charge coupled device) device.

Hereinafter, the detailed configuration will be described.

The substrate 110 may be a P-type or N-type substrate.

The pixel region 120 may be provided on the substrate 120 and may be configured to store and output pixel data by a light receiving process.

The pixel region 120 may include a well 121, a vertical buried CCD (VBCCD) 122, and an electrode 123.

The circuit region 130 is provided on the substrate 110 and may be formed on one side of the pixel region 120.

The isolation well 140 may be provided between the pixel region 120 and both side surfaces of the circuit region 130 to prevent a noise influence between the pixel region 120 and the circuit region 130. [

The isolation deep-well 150 may be formed in the substrate 110 to surround the entire lower end of the pixel region 120. This isolation dip-well 150 is a structure for preventing noise from affecting the pixels 120a provided in the pixel region 120. [

Infrared light having a long wavelength up to the bulk configuration of the substrate 110 has a noise influence on the adjacent pixels 120a through the bulk structure. In order to block the noise influence, the entire lower portion of the pixel region 120 is isolated And may be constituted by the dip-well 150 to prevent the influence of noise between the pixels 120a by the infrared ray reaching the bulk structure of the substrate 110.

On the other hand, it is not blocked by the side isolation well 140 that light of a long wavelength reaches the substrate 110 and affects the noise in the circuit area 130, since the isolation dip- 110 from interfering with each other between the pixel region 120 and the circuit region 130. Well 150 because the pixel region 120 can be isolated from the circuit region 130 by blocking only the pixel region 120. [

And may be configured to form the isolation dip-well 150 at the bottom of each of the pixel region 120 and the circuit region 130 as needed.

4 is a side cross-sectional view of a solid-state imaging device for area separation using a dip-well according to a second embodiment of the present invention.

4, a solid-state image pickup device 200 for performing a region separation using a deep-well according to an exemplary embodiment of the present invention includes a substrate 210, a pixel area 220, A circuit area 230, an isolation well 240, and an isolation deep well 250. In one embodiment,

The solid-state imaging device 200 for performing the region separation using the deep-well may form an isolation dip-well 250 at the lower end of the circuit region 230 so that long wavelength light is transmitted through the substrate bulk structure 220 And the circuit region 230 from being affected by noise. In addition, the isolation dip-well 250, along with the isolation well 240, is configured to prevent noise from affecting the pixel region 220 and the circuit region 230 through the substrate bulk configuration.

Here, the solid-state image pickup device 200 for performing the region separation using the deep-well may be a CCD (charge coupled device) device.

Hereinafter, the detailed configuration will be described.

The substrate 210 may be a P-type or N-type substrate.

The pixel region 220 may be provided on the substrate 220 and may be configured to store and output pixel data by a light receiving process.

The pixel region 220 may include a well 221, a vertical buried CCD (VBCCD) 222, and an electrode 223.

The circuit region 230 is provided on the substrate 210 and may be formed on one side of the pixel region 220.

The isolation well 240 may be provided between the pixel region 220 and both sides of the circuit region 230 in order to prevent the influence of noise between the pixel region 220 and the circuit region 230.

The isolation dip-well 250 may be formed in the substrate 210 to surround the entire lower end of the circuit region 230. This isolation dip-well 250 is a structure for preventing a noise influence between the pixel region 220 and the circuit region 230.

The infrared light having a long wavelength up to the bulk configuration of the substrate 210 has a noise effect between the pixel region 220 and the circuit region 230 through the bulk structure, .

The isolation dip-well 250 can be prevented from affecting the circuit region 230 through the bottom of such a substrate 210. [ Only the circuit region 230 can be separated from the pixel region 220. Therefore, the circuit region 230 can be formed only at the lower end of the circuit region 230.

And may be configured to form the isolation dip-well 250 at the bottom of each of the pixel region 220 and the circuit region 230 as needed.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the following claims. There will be.

110: substrate
120: pixel area
120a: Pixel
121: Well
122: vertical buried CCD (VBCCD)
123: Electrode
130: circuit area
140: isolation well
150: Isolation Deep Well
210: substrate
220: pixel area
220a: Pixel
221: Well
222: vertical buried CCD (VBCCD)
223: Electrode
230: circuit area
240: isolation well
250: Isolation Deep Well

Claims (5)

A substrate;
A pixel region formed by a plurality of pixels provided on the substrate;
And an isolation deep well formed in the substrate to surround the entire lower end of the pixel region. ≪ Desc / Clms Page number 13 >
The method according to claim 1,
Further comprising an isolation well formed between the pixel region and both side surfaces of the circuit region to separate the pixel region from a circuit region on the substrate. ≪ RTI ID = 0.0 > State image pickup device.
The solid-state image pickup device according to claim 1,
Wherein the solid-state image sensor is a CCD (charge coupled device) device.
A substrate;
A pixel region provided on the substrate;
A circuit region provided on the substrate;
An isolation well formed between the pixel region and both side surfaces of the circuit region to separate circuit regions from adjacent pixel regions;
And an isolating deep well formed in the substrate to surround the entire lower end of the circuit region. ≪ Desc / Clms Page number 20 >
The solid-state imaging device according to claim 4,
Wherein the solid-state image sensor is a CCD (charge coupled device) device.

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