KR20180127250A - Precursor for forming encapsulation film, method for manufacturing encpasulation film using the same and encpasulation film manufactured thereby - Google Patents

Abstract

The present invention provides a precursor for forming an encapsulation film, a method for manufacturing an encapsulation film using the same, and an encapsulation film manufactured thereby. According to an embodiment of the present invention, the precursor for forming an encapsulation film can be easily deposited at a low temperature lower than or equal to 100 deg. C, and can increase a deposition speed. Moreover, when an encapsulation film is manufactured by using the precursor, a silicon-containing thin film can be realized with excellent moisture permeability and material property characteristics.

Description

TECHNICAL FIELD The present invention relates to a precursor for forming an encapsulation film, a method for producing the encapsulation film using the encapsulation film, and a sealing film formed by the encapsulation film.

The present invention relates to a precursor for forming a sealing film, a method for producing a sealing film using the precursor, and a sealing film formed by the method.

BACKGROUND ART [0002] Organic light emitting diodes (OLEDs) are one type of organic electronic devices (OEDs), and are classified into electric / electronic devices that utilize the principle that electrons and electrons, . Such OLEDs can be driven at a faster response speed and lower power than conventional displays, are excellent in luminance, and are advantageous in thinness, and thus are being applied to various electronic devices.

 Recently, as the display market has changed to a flexible form, it has become impossible to encapsulate glass which has been used in the past, and a thin film forming method by various deposition methods has been developed to replace this come.

For example, SiO ₂ or SiN thin films are formed and sealed using chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes. However, in the conventional CVD and ALD processes, deposition is performed at a high temperature, for example, 100 ° C or higher as a display standard. In such a case, there may be various problems such as damage to the organic light emitting device due to high temperature.

Accordingly, there is a need for a thin film forming method capable of depositing at a low temperature of 100 DEG C or less in order to form a thin film for protecting an organic light emitting device. Therefore, it is necessary to develop a precursor which can be deposited at a low temperature which can solve the above problems, and a method for producing a sealing film using the precursor.

U.S. Patent No. 7077904

A first object of the present invention is to provide a precursor for forming a sealing film.

A second object of the present invention is to provide a method for producing a sealing film using the precursor for forming a sealing film.

Furthermore, a third object of the present invention is to provide a sealing film formed by the above-mentioned production method.

The present invention provides, according to one embodiment, a precursor for forming a sealing film comprising a compound of formula 1:

[Chemical Formula 1]

In Formula 1,

R ₁ to R ₄ each independently include hydrogen (H) or an alkyl group.

The present invention also relates to a process for preparing a reaction chamber comprising providing a substrate in a reaction chamber, And a precursor for forming the encapsulating film is introduced into the reaction chamber and a reaction source is introduced and reacted by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) Containing thin film; The present invention also provides a method for producing an encapsulating film.

In addition, the present invention provides a sealing film formed by the method according to one embodiment.

The precursor for forming the encapsulating film according to an embodiment of the present invention can be easily deposited even at a low temperature of 100 ° C or less and the deposition rate can also be improved.

Further, when a sealing film is produced by using this, a silicon-containing thin film having excellent moisture permeability and physical properties can be realized.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate exemplary embodiments of the invention and, together with the description of the invention, It should not be construed as limited.
1 and 2 are sectional views of a sealing film according to an embodiment of the present invention.
3 is a schematic diagram of a bag product including an organic electronic device according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail in order to facilitate understanding of the present invention.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms and the inventor may appropriately define the concept of the term in order to best describe its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise.

In the formulas disclosed herein and throughout the description, the term "alkyl" means a linear or branched functional group having 1 to 10 carbon atoms. The alkyl group may have one or more functional groups such as, but not limited to, an alkoxy group, a dialkyl amino group, or combinations thereof bonded thereto. In other embodiments, the alkyl group has no more than one functional group attached thereto.

The precursor for forming an encapsulating film according to an embodiment of the present invention includes a compound represented by the following Formula 1:

[Chemical Formula 1]

In Formula 1,

R ₁ to R ₄ each independently include hydrogen (H) or an alkyl group.

The precursor for forming the encapsulating film of Formula 1 can be deposited at a low temperature to easily form a silicon-containing thin film having excellent moisture permeability and excellent physical properties, and can also improve a deposition rate.

Hereinafter, the present invention will be described in more detail.

According to an embodiment of the present invention, R ₁ to R ₄ each independently represent hydrogen (H) or a C1 to C10 alkyl group, and specifically, R ₁ to R ₄ are each independently Lt; RTI ID = 0.0 > Cl-C5 < / RTI > More specifically, the precursor of Formula 1 may include 1,2-bis (dimethylamino) tetramethyldisilane, which may be represented by Formula 1-1 .

[Formula 1-1]

In general, when the precursor for forming a sealing film is bulked at a lower temperature than the structure of the formula (1), specifically the structure of the formula (1-1), the vapor pressure may be poor and the deposition rate may be lowered. (Hereinafter referred to as CVD) or Atomic Layer Deposition (hereinafter referred to as ALD) process, the deposition temperature must be raised to meet the required vapor pressure. However, when the deposition temperature is raised, the precursor of the disilane structure may be decomposed. For example, existing precursors can form silane (SiH ₄ ) or disilane (Si ₂ H ₆ ) while decomposing, thereby degrading the step coverage characteristics. In addition, such silane may be spontaneously ignited at room temperature or spontaneously burned, which may cause safety and handling problems. Moreover, the formation of silane or disilane and other byproducts can be taken to be unacceptable in reliable semiconductor fabrication with only a 1% to 2% change in chemical purity and lowering the purity level of the precursor.

The precursor for forming the encapsulating film of the present invention is suitable as a CVD or ALD precursor in a reactive and microelectronic device manufacturing process, and can be excellent in reactivity and stability.

In particular, since each Si contains a methyl group and a methylamino group as shown in the above formula (1-1), it has a relatively weaker bond than a Si-based precursor such as Diisoprophylaminosilane, It is possible to deposit easily at a temperature, and the deposition rate can also be improved.

In addition, the precursor of the compound of Formula 1 may be used for forming a sealing film. The encapsulating film may be a sealing film formed to protect the organic electronic device because it is vulnerable to external moisture and oxygen in the case of an organic electronic device such as an organic light emitting device.

In addition, the precursor of the compound of Formula 1 may be used not only for forming the encapsulation film but also for forming a thin film on a substrate such as CVD, ALD, CCVD, MOCVD, thermochemical vapor deposition, (PECVD), high density PECVD, photon assisted CVD, plasma-photon assisted (PPECVD), cryogenic chemical vapor deposition, chemically assisted vapor deposition, thermal-filament chemical vapor deposition, CVD of fluid polymer precursor, Deposition from critical fluids, and low energy CVD (LECVD). Among them, the precursor of the above formula (1) can be usefully used, for example, in the vapor deposition of CVD or ALD.

Further, the present invention can produce a sealing film using the precursor for forming a sealing film.

A method of producing an encapsulation film according to an embodiment of the present invention includes providing a substrate in a reaction chamber; And injecting the precursor for forming an encapsulating film into the reaction chamber, introducing a reaction source, and reacting the precursor by a CVD or ALD method to form a silicon-containing thin film on the substrate.

According to one embodiment of the present invention, when the precursor for forming the encapsulating film of Formula 1 is used, the precursor for forming the encapsulating film of the present invention may have a high vapor pressure to reach the reaction chamber effectively, A thin film can be easily formed. In addition, the deposition rate can also be improved. In particular, when 1,2-bis (dimethylamino) tetramethyldisilane, which is the precursor of the above formula (1-1), is used, by containing a methyl group and a methylamino group in each Si, by a relatively weak bond between silane and silane The deposition rate can be remarkably improved as well as the deposition can be easily performed even at a low temperature.

The manufacturing method will be described in detail as follows.

First, step 1 may include providing a substrate within the chamber.

The chamber may be a CVD or ALD reaction chamber.

At this time, the substrate may be an inorganic substrate, for example, an inorganic thin film including an organic electronic device.

As used herein, the term " organic electronic device " refers to an article or apparatus having a structure including an organic material layer that generates alternating electric charges using holes and electrons between a pair of electrodes facing each other, But are not limited to, photovoltaic devices, rectifiers, transmitters, and organic light emitting diodes (OLEDs). In one embodiment of the present invention, the organic electronic device may be an OLED.

Manufacturing method according to one embodiment of the present invention using a precursor of the general formula (1), and high vapor pressure, CVD or ALD, specifically by being performed by ALD, the uniform base material having a large area in the SiO ₂ A thin film can be deposited. Therefore, the width of the substrate may not be greatly proposed. The inorganic base material including the organic electronic device may be one of a silicon nitride film, a silicon oxide film, a metal or a metal oxide film such as Al ₂ O ₃ , AlON, MgO, ZnO, HfO ₂ and ZrO ₂ , And combinations of two or more of these.

The step 2 may include injecting the precursor for forming a sealing film into the reaction chamber, introducing a reaction source, and reacting the precursor by a CVD or ALD method to form a silicon-containing thin film on the substrate.

The CVD method used according to an embodiment of the present invention is a method of depositing a solid product produced by a chemical reaction on a substrate by injecting a chemical vapor deposition reaction source into a reaction chamber by a chemical vapor deposition (CVD) method . Generally, a CVD method refers to a method of decomposing a gaseous compound and forming a thin film on a substrate by using a chemical reaction. In the case of general CVD, since the deposition takes place at a high temperature, a phase change occurs on the surface of the substrate and electrical and mechanical properties are deteriorated. Therefore, there is a limitation in selection of the substrate, and it is difficult to apply to a large-sized substrate.

In addition, ALD used according to one embodiment of the present invention is an atomic layer deposition method in which a vapor phase reaction is suppressed by injecting a precursor and a reaction source in a time division manner using a vapor phase chemical vapor deposition reaction, (Self-limiting reaction) in which the thickness of the thin film is precisely adjusted. The self-controlled reaction is a unique feature of ALD, which can precisely control the thickness of the thin film in atomic layer or less and control the composition precisely through thickness control. In addition, the self-controlled reaction characteristics have excellent step coverage and thickness uniformity, so that not only the capacitor having a large step difference in the structure but also the inner space of the fiber having a wide surface area and the complicated structure and the surface of the fine particle structure A thin film can be uniformly formed.

When a thin film is formed by ALD using the precursor of Formula 1 according to an embodiment of the present invention, the precursor and the reaction source are injected into the reaction chamber in a time division manner to suppress the gas phase reaction and utilize the self- A satisfactory thickness of the thin film can be obtained.

According to one embodiment of the present invention, when the precursor of Formula 1 is used to deposit by CVD or ALD, the silicon-containing thin film may include SiO ₂ or SiN thin film.

Nine general, the manufacturing method is to inject for sealant film forming precursor of formula (I) and activated by putting a reaction source into the reaction chamber within a reaction chamber, the substrate is placed a silicon-containing thin film, in particular SiO ₂ or on a substrate The SiN thin film may be formed at the same time as the precursor for the sealing film or may be supplied after the precursor for the sealing film is introduced.

Further, according to an embodiment of the present invention, the method may further include a step of introducing the precursor for forming the encapsulating film and introducing an inert gas into the space between the introduction of the reaction source and the reaction source, or both.

Specifically, the method comprises: disposing a substrate into a reaction chamber; Introducing the precursor for forming a sealing film of Formula 1 into the reaction chamber; Introducing an inert gas; Optionally purifying unreacted reducing agent; Introducing a nitrogen containing source into the reaction chamber; And purging the reaction chamber with an inert gas.

Further, in the above production process, the process from the step of injecting the precursor for forming the encapsulating film of formula (1) to the step of purging with inert gas can be repeated until a silicon-containing thin film having a desired thickness is obtained. According to an embodiment of the present invention, the thickness of the silicon-containing thin film may be 0.1 A / cycle to 2 A / cycle. In order to form the silicon-containing thin film, a process for injecting a precursor for forming a sealing film 10 to 1000 times.

The inert gas may be an inert gas which is used to purify the reactant and / or reaction byproducts which are in a minor ratio and does not react with the precursor. Exemplary inert gases include, but are not limited to, argon (Ar), nitrogen (N ₂ ), helium (He), neon, hydrogen (H ₂ ), and mixtures thereof. Specifically, an inert gas, such as argon or nitrogen, is supplied to the reactor at a flow rate ranging from about 10 to about 2000 sccm for about 0.1 to about 1000 sccm, thereby purifying unreacted material and any by- can do.

According to an embodiment of the present invention, the deposition rate and uniformity of the silicon-containing thin film may vary depending on the amount of the precursor of Formula 1, for example, the precursor of Formula 1 and the feed rate of the reaction source, and the flow rate. Particularly, when the precursor is introduced into the reaction chamber in which the substrate is placed, the amount and the flow rate of the precursor of the above formula (1) It can be a very important factor for thin film formation.

The precursor for forming the encapsulating film of Formula 1 is typically a volatile liquid precursor chemical of high purity which is evaporated and transferred to a deposition reaction chamber or a reaction chamber as a gas to deposit a silicon-containing thin film through a semiconductor device through a CVD or ALD process. This can be carried to the reaction chamber system, for example, using a pressurizable stainless steel vessel with suitable valves and accessories, so that the liquid precursor can be delivered to the deposition reaction chamber or reaction chamber.

The flow rate of the precursor of Formula 1 may range from 1 to 1000 ml / min, specifically from 100 to 800 ml / min. If the flow rate of the precursor of Formula 1 is less than the above range, The thin film may not be well formed, or it may be difficult to form a uniform film. In addition, when the flow rate of the precursor of Formula 1 exceeds the above range, impurities may be formed on the thin film.

Together with the precursor of the above formula (1) The reaction source for forming the thin film may include an oxygen-containing source, a nitrogen-containing source, or a mixed reaction source of two or more of them.

The oxygen containing source may be introduced into the reaction chamber in the form of at least one oxygen containing source and may be, for example, water (H ₂ O), oxygen (O ₂ ), oxygen plasma, ozone (O ₃ ) NO), nitrous oxide (N ₂ O), nitrogen dioxide (NO ₂ ), carbon monoxide (CO), and carbon dioxide (CO ₂ ).

In certain embodiments, the oxygen containing source may be introduced into the reaction chamber at a flow rate ranging from about 1 to about 2000 sccm (square cubic centimeters). In addition, the oxygen containing source may be introduced for a time in the range of about 0.1 to about 100 seconds. In one particular embodiment, the oxygen containing source may comprise water having a temperature of at least 10 < 0 > C.

The nitrogen containing source may comprise at least one selected from, for example, ammonia, hydrazine, monoalkyl hydrazine, dialkyl hydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma and nitrogen / hydrogen plasma. In certain embodiments, the nitrogen containing source may be introduced into the chamber at a flow rate ranging from about 1 to about 2000 sccm. The nitrogen containing source may be introduced for a time ranging from about 0.1 to about 100 seconds.

According to an embodiment of the present invention, for the uniform thin film formation and rapid deposition of the silicon-containing thin film, the injection ratio of the precursor of Formula 1 and the reaction source can be controlled.

For example, when an oxygen containing source is used as the reaction source, the feed ratio of the precursor of Formula 1 and the oxygen containing source is 1: 0.1 to 100, specifically 1: 0.5 to 50, more specifically 1: 10 < / RTI >

When a nitrogen-containing source is used as the reaction source, the feed ratio of the precursor and the nitrogen-containing source is 1: 0.1 to 100, specifically 1: 0.5 to 50, more specifically 1: 1 to 10 .

When the ratio of the precursor of Formula 1 and the reaction source is controlled within the above range, the precursor of Formula 1 and the reaction source effectively reach the entire substrate in the reaction chamber, A thin film can be formed. If the amount of the precursor of Formula 1 does not satisfy the input ratio range of the reaction source, It is difficult to form a thin film, which may adversely affect the reliability of the organic electronic device. Therefore, the introduction ratio of the precursor of Formula 1 and the reaction source may be an important factor for forming the silicon-containing thin film.

In addition, depending on the AC power (power value) applied in the same process conditions (working vacuum degree, amount of precursor, amount of reaction source, etc.) applied to the CVD or ALD reaction chamber, The deposition rate (DR) of the thin film is changed, and the refractive index and the hardness may be changed by affecting the density of the particles to be laminated.

Specifically, the lower the AC power applied to the reaction chamber under the same process conditions, the slower the deposition rate, the more dense the particles are stacked, the higher the density, the higher the refractive index and the higher the hardness.

In addition, a uniform and dense optimum silicon content In order to form the thin film, the power value applied to the plasma generation source may be set optimally to the amount of the precursor to be injected, and the ratio of the inert gas amount and the gas partial pressure ratio such as the reaction source may be set so that the injected gas The optimum environmental conditions such that the gas can flow smoothly in the vacuum reaction chamber can also be set.

According to one embodiment of the present invention, the CVD or ALD may be performed with a power range of 0 to 1000W. The power range may be a predetermined power value that is optimized to dissociate the precursor and allow the dissociated radicals to recombine.

Further, the reaction by the CVD or ALD method, which can be used for depositing a thin film at a low temperature according to an embodiment of the present invention, can be performed at a temperature of room temperature to 100 DEG C and a pressure of 0.4 to 1.6 Torr. If the reaction temperature exceeds 100 ° C or falls outside the above-described pressure range, the organic electronic device may be adversely affected during the deposition process.

According to the method for producing an encapsulating film according to an embodiment of the present invention, The deposition rate (D / R) of the thin film may be 0.1 to 2 ANGSTROM / cycle. In addition, When the thin film is formed on the substrate, it may take about 0.5 to 2.5 minutes.

Meanwhile, according to one embodiment of the present invention, it is possible to provide a sealing film produced by the above method.

The encapsulating film may be laminated on the organic electronic device to encapsulate the organic electronic device, and may be composed of one or more thin films. The encapsulation film can be formed, for example, Thin film, and the silicon-containing The thin film can be formed by the CVD or ALD method using the precursor of formula (1).

1 and 2 are sectional views of encapsulation films 100 and 200 according to an embodiment of the present invention.

1, the encapsulating film 100 includes a substrate 110 and a silicon-containing Layer film including the thin film 120. [0035] At this time, the substrate 110 may be an inorganic thin film (first inorganic thin film), for example, to be attached to cover the organic electronic device. For example, the substrate 110 may be a silicon nitride film, a silicon oxide film, a metal, or a metal oxide film such as Al ₂ O ₃ , AlON, MgO, ZnO, HfO ₂ and ZrO ₂ , or a combination of two or more thereof . ≪ / RTI > The substrate is formed so as to cover the organic electronic device, and the thickness is not particularly limited as long as it is thick enough to cover the organic electronic device, but may be, for example, 0.1 to 1 占 퐉 in thickness.

2, the encapsulation film 200 may be formed of the silicon-containing The inorganic thin film 230 (second inorganic thin film) may be further included on the thin film 220. [ Specifically, the sealing film 200 includes a substrate 210 and a silicon-containing The thin film 220, and the silicon-containing The inorganic thin film 230 may be formed on the thin film 220.

The inorganic thin film 230 (the second inorganic thin film) may be formed using a deposition process such as CVD or ALD, and may be formed using a silicon nitride film, a silicon oxide film, a metal or Al ₂ O ₃ , AlON, MgO, ZnO, HfO ₂ , one of the metal oxide, such as ZrO _2, or may include two or more combinations of the foregoing.

The sealing film 200 composed of such a multilayer film may be formed on the substrate including the organic electronic device to a thickness of about 1 to 10 mu m.

Further, according to an embodiment of the present invention, The thin film may have a refractive index of 1.2 to 1.7 and a thickness of 10 to 100 nm. The content of impurities in the silicon-containing thin film may be 1% or less, specifically 0.1%. In this case, the impurity may be, for example, CyHx (x and y each independently may be an integer of 0 to 4), specifically CH. If a large amount of impurities are formed on the silicon-containing thin film, the characteristics of the thin film may be deteriorated and adversely affect the organic electronic device, which may cause a problem of reliability of the product.

Meanwhile, the present invention can provide a bag product by applying the bag film to an organic electronic device, and a schematic diagram of a bag product including an organic electronic device according to an embodiment of the present invention is as shown in FIG.

3, the encapsulation product 350 includes a plurality of thin films, for example, at least two or more thin films, on the substrate 310 including the organic electronic devices 320 to cover the organic electronic devices The sealing film 300 may be formed of a metal. By forming the multilayer sealing film in this manner, it is possible to prevent moisture or air from penetrating into the organic electronic device 320 from the outside.

In detail, the encapsulation product 350 includes an organic electronic device 320, for example, a substrate 310 on which an organic light emitting diode is formed; And a sealing film 300 covering the organic electronic device 320. At this time, the encapsulation film 300 includes an inorganic thin film 330 as a base material and a silicon-containing And may include a thin film 340

In the encapsulation film 300, the inorganic thin film 330 and the silicon- The thickness ratio of the thin film 340 may be, for example, from 1: 1 to 100. Further, as mentioned above, A second inorganic thin film, which is another layer, may be further formed on the thin film 340.

The encapsulation film 300 may be formed on the organic electronic device 320 to a thickness of about 1 to 10 mu m.

The substrate 310 may be a transparent substrate made of glass, plastic, or a conductive material. In addition, there is a buffer layer (not shown) for protecting the organic electronic device 320 on the substrate 310 can be further formed, the buffer layer may be formed by such as a silicon oxide (SiO ₂₎ or silicon nitride (SiNx) . Further, the silicon oxide or silicon nitride may be performed in the same manner as the method of forming the silicon-containing thin film of the present invention.

The precursor for forming an encapsulating film according to an embodiment of the present invention has a high vapor pressure and can be deposited at a low temperature of 100 ° C or lower. When the encapsulating film is produced using the precursor, the impurities are minimized, Not only the thin film can be uniformly deposited but also the deposition rate of the silicon-containing thin film can be improved.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to examples. However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention.

Example  One

After preparing a substrate on which an organic light emitting device was formed, an inorganic thin film containing Al ₂ O ₃ having a thickness of 125 탆 was formed by a CVD method so as to cover the organic light emitting device and used as a substrate.

The inorganic thin film containing Al ₂ O ₃ was placed in a reaction chamber of ALD equipment (iSV Research (iOV e100)). 1,2-bis (dimethylamino) tetramethyldisilane (1,2-bis (dimethylamino) tetramethyldisilane) was added as a precursor to the reaction chamber in which the substrate was placed. At this time, the flow rate of the precursor was 10 to 1000 ml / min.

Next, Ar was purged into the reaction chamber as an inert gas at a flow rate of about 1000 sccm for 5 seconds. Thereafter, ammonia gas was supplied as a reaction source into the reaction chamber at a flow rate of about 500 sccm for 5 seconds. At this time, the charging ratio of 1,2-bis (dimethylamino) tetramethyldisilane: ammonia as a precursor was 1: 5.

Thereafter, the reaction chamber was purged by supplying Ar as an inert gas. This process was repeated 400 times so that the SiN film had a thickness of 10 nm. At this time, the power applied to the ALD reaction chamber was 200 W, and the ALD was performed at a temperature of 100 캜 and a pressure of 1.5 Torr.

 When the ALD equipment is operated, a precursor in the reaction chamber is vaporized and supplied to the interior of the vacuum reaction chamber. Thereafter, a molecular bonding reaction is performed between the ammonia gas and the precursor as a reaction source, thereby forming a SiN thin film on the inorganic thin film can do.

The SiN thus formed The thickness of the thin film was 10 nm.

Example  2

The feed rate of 1,2-bis (dimethylamino) tetramethyldisilane: ammonia gas was 1:10 , A sealing film was produced in the same manner as in Example 1. The results are shown in Table 1. < tb >< TABLE >

Example  3

A sealing film was prepared in the same manner as in Example 1, except that the charging ratio of 1,2-bis (dimethylamino) tetramethyldisilane: ammonia gas was changed to 1: 1.

Example  4

A sealing film was produced in the same manner as in Example 1, except that the charging ratio of 1,2-bis (dimethylamino) tetramethyldisilane: ammonia gas was changed to 1: 0.1.

Example  5

A sealing film was prepared in the same manner as in Example 1, except that the charging ratio of 1,2-bis (dimethylamino) tetramethyldisilane: ammonia gas was changed to 1: 100.

Comparative Example  One

A sealing film was prepared in the same manner as in Example 1, except that the precursor was changed to DIPAS (Diisopropylaminosilane) instead of 1,2-bis (dimethylamino) tetramethyldisilane.

division Example Comparative Example One 2 3 4 5 One Precursor 1,2-bis (dimethylamino) tetramethyldisilane Diisopropylaminosilane reaction
Source Ammonia gas Deposition method ALD ALD ALD ALD ALD ALD Precursor: Reaction source input ratio
(Weight ratio) 1: 5 1:10 1: 1 1: 0.1 1: 100 1: 5

Properties Example Comparative Example One 2 3 4 5 One SiN thin film thickness (nm) 10 10 10 10 10 No deposition Deposition rate (Å / min) 0.202 0.237 0.182 0.114 0.240 No deposition Impurity content <1% <1% <1% <1% <1% No deposition

100, 200, 300: Encapsulation film
110, 210: substrate
120, 220, 340: a silicon-containing thin film
230 and 330: inorganic thin film
320: Organic electronic device
310: substrate
350: Bag products

Claims (16)

A precursor for forming a sealing film comprising a compound of the following formula:
[Chemical Formula 1]

In Formula 1,
Each of R ₁ to R ₄ independently includes hydrogen (H) or a C1 to C10 alkyl group. The method according to claim 1,
Wherein R ₁ to R ₄ each independently represent a C1 to C5 alkyl group. The method according to claim 1,
Wherein the compound of Formula 1 comprises 1,2-bis (dimethylamino) tetramethyldisilane (1,2-bis (dimethylamino) tetramethyldisilane). Providing a substrate within the reaction chamber; And
The precursor for forming a sealing film according to claim 1 is introduced into the reaction chamber and the reaction source is introduced and reacted by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method, Forming a silicon-containing thin film;
&Lt; / RTI &gt; The method of claim 4,
Further comprising introducing an inert gas between the introduction of the sealing film-forming precursor and the introduction of the reaction source, or after the introduction of the reaction source, or both, thereby purging the sealing film. The method of claim 4,
Wherein the reaction source is at least one selected from a nitrogen-containing source and an oxygen-containing source. The method of claim 6,
And the feed ratio of the precursor for forming the encapsulating film and the nitrogen-containing source is 1: 0.1 to 100. The method of claim 6,
Wherein the feed ratio of the precursor for forming a sealing film and the oxygen-containing source is 1: 0.1 to 100. The method of claim 6,
Wherein the nitrogen containing source comprises at least one selected from ammonia, hydrazine, monoalkyl hydrazine, dialkyl hydrazine, nitrogen, nitrogen / hydrogen, ammonia plasma, nitrogen plasma and nitrogen / hydrogen plasma,
The oxygen-containing source is water (H ₂ O), oxygen (O _2), oxygen plasma, ozone (O _3), carbon monoxide (CO nitrogen monoxide (NO), nitrous oxide (N ₂ O), nitrogen dioxide (NO _2), ) And carbon dioxide (CO ₂ ). The method of claim 4,
Wherein the flow rate of the sealing film forming precursor is in the range of 1 to 1000 ml / min. The method of claim 5,
Wherein the inert gas is introduced at a flow rate of 10 to 2000 sccm for 0.1 to 1000 seconds. The method of claim 4,
The silicon-containing thin film may be SiN or SiO ₂ A method for producing a sealing film comprising a thin film. The method of claim 4,
Wherein the reaction by the CVD or ALD method is carried out at a temperature of from room temperature to 100 DEG C and a pressure of from 0.4 to 1.6 Torr. The method of claim 4,
The silicon- Wherein the deposition rate (D / R) of the thin film is 0.1 to 2 ANGSTROM / cycle. A bag film formed by the manufacturing method according to any one of claims 4 to 14. 16. The method of claim 15,
The encapsulation film may comprise SiN or SiO ₂ having a thickness of 1 to 100 nm A bag film comprising a thin film.

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