KR20180126812A - Nano imprint blankmask , Nano imprint mold and method for fabricating of the same - Google Patents

Abstract

Provided are a nanoimprint blank mask, a manufacturing method of a nanoimprint mold, and a nanoimprint mold. According to the present invention, the nanoimprint blank mask comprises: a hard mask film which is placed on a transparent substrate and has an etching selectivity with the transparent substrate; and an etching regulating film which is placed on the hard mask film, is etched on the same etching material as the transparent substrate, and has an etching selectivity with the hard mask film. In addition, the etching regulating film and the hard mask film are formed of a pattern. The hard mask film pattern is etched on a part on the transparent substrate exposed to an etching mask at the same time when the etching regulating pattern is etched. Based on the end point of the etching regulating film pattern, the end point of etching on the transparent substrate is determined in order to form a mold pattern formed by etching the transparent substrate. Therefore, it is possible to ensure the end point of etching of the transparent substrate with accuracy and reproducibility by determining the end point of the etching of the transparent substrate by using the end point of the etching of the etching regulating film pattern.

Description

[0001] NANOIMPRINT BLANK MASK, NANOIMPRINT MOLD, AND NANOIMPRINT BLAND MASK,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nanoimprint blank mask, a nanoimprint mold, and a manufacturing method thereof, and more particularly, to a nanoimprint blank mask, a nanoimprint mold and a manufacturing method thereof that can ensure reproducibility of a high resolution pattern.

At present, a photolithography method using visible light or ultraviolet light is used as a transfer technique for forming a semiconductor integrated circuit or the like having a fine pattern. The photolithography using the exposure light is capable of transferring the pattern to the resolution limit of about 1/2 of the exposure wavelength, and it is known that the resolution limit is about 1/4 of the exposure wavelength even when the immersion lithography method is used . In recent years, as the miniaturization of semiconductor devices is accelerated, the EUV lithography method using EUV (Extreme Ultra-Violet) light having a shorter wavelength than the ArF exposure wavelength has been developed.

Meanwhile, in recent years, development of a nano imprint technique has been conducted as a method for pattern transfer in addition to a photolithography method using the exposure light.

The nanoimprint technology is a technique for transferring a fine pattern by bringing a substrate having a fine pattern called a mold formed thereon into direct contact with a wafer coated with a resist or the like. The nanoimprint technique is attracting attention as a next-generation lithography technique because it is inexpensive to manufacture a member used for transferring fine patterns or in an exposing apparatus as compared with liquid immersion lithography using EUV lithography or EUV lithography. However, since the nanoimprint technique is a transfer method in which a mold is directly pressed onto a wafer or the like, and the pattern of the mold is directly transferred to a wafer or the like, the fine pattern formed on the mold is required to have the same level of accuracy as the semiconductor circuit pattern.

Nanoimprint technology can be classified into two types, thermal imprint and optical imprint. A thermal imprint is a method in which a mold having a fine pattern is heated and pressed against a thermoplastic resin as a molding material, and then the molding material is cooled and released to transfer a fine pattern. The optical imprint is a method of pressing a mold having a fine pattern onto a photo-curing resin as a molding material, irradiating it with ultraviolet light to cure it, and thereafter releasing the molding material to transfer a fine pattern.

A mold used in a process of directly transferring a pattern onto a wafer in a transfer process using a nanoimprint mold is called a working mold. And, the primary mold, that is, the master mold, in which a fine pattern is formed, is not used as a working mold. Instead, a submaster mold to which a fine pattern of the master mold is transferred, such as a secondary mold or a tertiary mold, in which the fine pattern of the master mold is transferred to another blank mask using an imprint process, is used as a working mold. This is because it is possible to easily manufacture a new sub-master mold when the master mold is safe even if the sub-master mold is deformed and broken, thereby preventing breakage of the master mold.

Conventional nanoimprint molds are formed by applying a resist on a blank mask on which a hard mask film such as chrome (Cr) is formed on a transparent substrate such as quartz glass, forming a resist pattern using electron beam exposure or the like, The hard mask film is etched to form a hard mask film pattern, and then the transparent substrate is etched using the hard mask film pattern as a mask to form a step pattern on the transparent substrate. The hard mask film pattern to be applied to the blank mask needs to have a sufficient etching selectivity with respect to the transparent substrate as it acts as an etch mask when etching the transparent substrate, (Cr) or chromium (Cr) compound is typically used as a material that is etched in the system gas and not etched in the fluorine (F) -type gas.

However, it is difficult to determine the etching end point of the transparent substrate when etching the transparent substrate to fabricate the nanoimprint mold, so that it is difficult to determine the etching time of the transparent substrate. That is, the determination of the etching end point generally utilizes the difference in the detection amount of a specific material such as a metal included in the thin film to be etched and the lower thin film, silicon (Si), nitrogen (N), oxygen (O), carbon (C) Since the transparent substrate does not have a lower thin film, there is no difference in the detection amount of a specific substance changed during etching, and it is difficult to secure an etch end point clearly. Accordingly, when a pattern is formed by etching the transparent substrate, it is difficult to ensure reproducibility of the pattern characteristic as the pattern is formed depending on the etching time.

Accordingly, there is a need for a new nanoimprint blank mask capable of realizing a high-resolution pattern and accurately securing an etching end point in etching a transparent substrate.

The present invention provides a nanoimprint mold including a pattern formed by etching a substrate so that a high-resolution pattern can be realized, and a nanoimprint blank mask for manufacturing the same.

The present invention provides a nanoimprint blank mask capable of accurately and reproducibly ensuring an etch end point of a transparent substrate for forming a transparent substrate etch pattern, a nanoimprint mold manufactured using the same, and a method of manufacturing the same.

A nanoimprint blank mask according to the present invention includes: a hard mask film provided on a transparent substrate and having an etch selectivity with the transparent substrate; and a hard mask film provided on the hard mask film, And an etching control film having a mask film and an etching selection ratio.

Wherein the hard mask film comprises one of Cr and Cr containing at least one element selected from the group consisting of nitrogen (N), oxygen (O) and carbon (C), and the etch adjusting film comprises at least one of molybdenum silicide (MoSi) (Si), nitrogen (N), oxygen (O), and carbon (C).

Wherein the hard mask film and the etching control film are formed in a pattern, and the exposed transparent substrate portion and the etching control film pattern are simultaneously etched with an etching mask, wherein the etching end point of the etching control film pattern, To form a mold pattern in which the transparent substrate is etched.

The present invention relates to a method of forming an etch control film pattern on a transparent substrate using the hard mask film pattern and the etch control film pattern, It is possible to accurately and reproducibly etch the transparent substrate by determining the end point.

Accordingly, it is possible to provide a nanoimprint blank mask and a nanoimprint mold capable of realizing a high resolution pattern by accurately and reproducibly forming a nanoimprint mold pattern by etching a part of a transparent substrate.

1 is a cross-sectional view illustrating a nanoimprint blank mask according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a method of manufacturing a nanoimprint mold according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings, but it should be understood that the present invention is not limited to these embodiments. For example, And is not intended to limit the scope of the invention. Therefore, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Accordingly, the true scope of protection of the present invention should be determined by the technical matters of the claims.

The present invention has examined various means for accurately and reproducibly ensuring the etching end point of a transparent substrate when manufacturing a master mold from a nanoimprint blank mask.

As a result, in manufacturing a nanoimprint mold using a nanoimprint blank mask, that is, a master mold, an etching control film was included in addition to a hard mask on a transparent substrate.

The nanoimprint blank mask including the etching control film can be used not only for the master mold but also for the submaster mold production. When a submaster mold is manufactured by the imprint technique, it is necessary to apply a resist containing a photocurable resin, not an electron beam exposure resist.

1 is a cross-sectional view illustrating a nanoimprint blank mask according to an embodiment of the present invention.

Referring to FIG. 1, a nanoimprint blank mask 100 according to the present invention is a blank mask for forming a nanoimprint mold including a transfer pattern formed by etching a transparent substrate 102.

The nanoimprint blank mask 100 includes a hard mask film 104, an etching control film 106 and a resist film 108 which are sequentially formed on a transparent substrate 102.

The transparent substrate 102 must satisfy the characteristics as a substrate for a nanoimprint mold. That is, when transferring a fine pattern using a nanoimprint mold, when the shape of the nanoimprint mold changes according to the temperature change, the positional accuracy of the transferred fine pattern is lowered. Therefore, It is required that the shape change is small. For this purpose, the transparent substrate 102 is required to have a low thermal expansion coefficient with respect to the temperature at the time of transferring the fine pattern, and preferably has a thermal expansion coefficient of? 6.5 占 10-7 / 占 폚 at a temperature of 15 占 폚 to 250 占 폚.

The transparent substrate 102 is required to have excellent flatness of the surface on which the fine pattern is formed, and more specifically, has a flatness of 500 nm or less. The surface opposite to the surface on which the fine pattern is formed is preferably excellent in flatness and has a flatness of 3 占 퐉 or less.

The transparent substrate 102 uses light having a wavelength of 300 nm to 400 nm, for example, when transferring a pattern onto a resist coated on a wafer, or when transferring a pattern onto a blank mask for manufacturing a sub-master mold It is necessary to have a certain degree of transmittance with respect to the above wavelength, and it is preferable that it has a transmittance of 60% or more with respect to light having a wavelength of 300 nm to 400 nm.

The transparent substrate 102 preferably uses quartz glass to satisfy the above-described optical characteristics. The size and thickness of the transparent substrate 102 are suitably adjusted according to the design value of the nanoimprint mold (blank mask for the nanoimprint mold) . In the embodiment of the present invention, a quartz glass substrate having a width of 6 inches (152 mm) and a thickness of 0.25 inch (6.3 mm) was used.

The hard mask film 104 is processed in the form of a pattern exposing a portion to be etched of the transparent substrate 102 at the time of etching the transparent substrate 102 together with the upper etching control film 106, . Accordingly, the hard mask film 104 is etched with a material having an excellent etch selectivity, preferably a chlorine (Cl) based etching gas, on the transparent substrate 102 that is etched with the fluorine (F) Lt; / RTI >

For this, the hard mask layer 104 may be formed of a material selected from the group consisting of molybdenum (Mo), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), zinc (Zn) At least one material selected from the group consisting of manganese (Mn), cadmium (Cd), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), hafnium (Hf), and tungsten Or at least one light element selected from the group consisting of silicon (Si), nitrogen (N), oxygen (O), and carbon (C).

The hard mask film 104 is a material having a high extinction coefficient and a high etch selectivity with the transparent substrate 102. In particular, the hard mask film 104 is made of chromium (Cr) or CrN, CrO, CrC, CrON, CrCN, CrCO, It is preferable to be made of one of the same chromium (Cr) compounds. At this time, when the hard mask film 104 is made of a chromium (Cr) compound, chromium (Cr) has a content of 40 at% to 90 at%, and the light element has a content of 10 at% to 60 at%. If the content of chromium (Cr) is less than 40 at%, the compressive stress of the hard mask film 104 becomes large and the adhesion to the transparent substrate 102 is deteriorated. If the content of chromium (Cr) The tensile stress of the mask film 104 is increased and the adhesion to the transparent substrate 102 is lowered.

The hard mask film 104 has a thickness of 2 nm to 8 nm. When the film thickness of the hard mask film 102 is less than 2 nm, it is difficult to etch the transparent substrate to a desired depth depending on the etch selectivity with the transparent substrate 102 during the dry etching using the fluorine (F) .

The etching control film 106 can be used for identifying the etching end point of the transparent substrate 102 at the time of pattern formation of the transparent substrate 102. [

The etch adjusting film 106 may be formed of at least one of molybdenum (Mo), silicon (Si), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), zinc (Zn) At least one material selected from Al, Mn, Cd, Mg, Li, Se, Cu, Hf, Or one or more light elements selected from the group consisting of nitrogen (N), oxygen (O), and carbon (C).

The etching control film 106 may further include at least one light element selected from silicon (Si), molybdenum silicide (MoSi) or nitrogen (N), oxygen (O) SiC, SiCON, MoSiN, MoSiC, MoSiON, MoSiCN, MoSiCO, and MoSiCON, which are used in the present invention, such as SiN, SiO, SiC, SiON, SiCN, When the etching control film 106 is made of a molybdenum silicide (MoSi) compound, the etching control film 106 is formed of molybdenum (Mo): silicon (Si): light element = 5 at% to 20 at% % To 70at%: 10at% to 45at%.

The etch adjusting film 106 is preferably formed using a sputtering method and the etch adjusting film 106 may be formed using a two-component system composed of a silicon (Si) single target or molybdenum silicide (MoSi) And the target has a composition ratio of molybdenum (Mo): silicon (Si) = 1 at% to 30 at%: 70 at% to 99 at%. When the content of molybdenum (Mo) in the composition ratio of the target is 30 at% or more, the chemical controllability of the etching control film 106 to the cleaning solution used in the production of the photomask becomes poor. The etching control film 106 may be formed using a co-sputtering method. The sputtering target may be a molybdenum (Mo), a silicon (Si), or a molybdenum silicide (MoSi). And can be manufactured using a composite target.

The etching control film 106 is used for identifying the etching end point of the transparent substrate 102 when the pattern of the transparent substrate 102 is formed. That is, the etch time of the transparent substrate 102 can be indirectly determined as the etch control film 106 is removed together with the transparent substrate 102 during etching of the transparent substrate 102 for manufacturing the nanoimprint mold. In detail, when the etching control film 106 is formed of a molybdenum silicide (MoSi) compound, the etching of the etching control film 106 also proceeds during the etching of the transparent substrate 102, , The etching end point of the transparent substrate can be indirectly observed by observing the change of molybdenum (Mo) or light element contained in the etching control film 106 pattern by using EPD (End Point Detection) .

The etch control film 106 is preferably designed to have a slow etch rate to increase the accuracy of etch end point identification for mold pattern formation of the transparent substrate 102. For example, if the etch time for forming the mold pattern of the transparent substrate 102 is 100 seconds, then the pattern of the etch control film 106 is such that the pattern of the etch control film 106 It becomes difficult to secure the etching end point data of the transparent substrate 102 for the remaining 80 seconds after the etching time of 20 seconds. Accordingly, it is preferable that the etch rate of the pattern of the etch control film 106 is low and that the etch rate of the etch control film 106 is lower than that of the transparent substrate 102 under the etch conditions of the transparent substrate 102, Is preferably controlled to be 0.1 to 1.5 times, preferably 0.3 to 1.0 times as high as that of the substrate. That is, the etching control film 106 has an etching rate of not more than 20 Å / sec, preferably not less than 15 Å / sec, more preferably not more than 10 Å / sec, with respect to the etching conditions of the transparent substrate 102.

The etching control film 106 has a thickness of 3 nm to 15 nm, preferably 5 nm to 10 nm. If the thickness of the etching control film 106 is less than 3 nm, it is difficult to secure etching end point data. If the etching control film 106 has a thickness of 15 nm or more, the pattern size may not be reduced.

The resist film 108 is formed using a chemically amplified resist or a resist containing a photocurable resin, and has a thickness of 100 nm or less, preferably 80 nm or less.

2 is a cross-sectional view illustrating a method of manufacturing a nanoimprint mold according to an embodiment of the present invention.

Referring to FIG. 2, a hard mask film 104 and an etching control film 106 are sequentially formed on a transparent substrate 102, and a resist film 108 is applied to form a nanoimprint blank mask. (a)

The hard mask film 104 is preferably formed of one of Cr, CrN, CrO, CrC, CrON, CrCN, CrCO, and CrCON that can etch into a chlorine (Cl)

Si, SiN, SiO, SiC, SiON, SiCN, SiCO, SiCON, MoSi, SiCN, or the like, which are etchable to the fluorine (F) material so as to have an etch selectivity with the hard mask film 104. Preferably, , MoSiN, MoSiC, MoSiON, MoSiCN, MoSiCO, MoSiCON. Here, the hard mask layer 104 and the etching control layer 106 can be formed by various deposition methods such as a sputtering method, an atomic layer deposition method, and a chemical vapor deposition method, and are preferably formed by a sputtering method.

A resist film pattern 108a is formed on the resist film to expose a region to be etched of the transparent substrate 102 used as a mold pattern by performing exposure and development processes and an etching gas containing a fluorine (F) The etching control film portion is etched to form an etching control film pattern 106a. (b)

The resist film pattern is removed and the exposed portion of the hard mask film is etched using the etching control film pattern 106a as an etching mask to etch the transparent substrate 102 using a chlorine (Cl) A hard mask film pattern 104a is formed to expose a part of the hard mask film pattern 104a. (c)

The etching control film pattern 106a and the exposed portion of the transparent substrate 102 are simultaneously etched with a fluorine (F) based etching material to form a mold pattern having a predetermined depth in the transparent substrate 102. [ (d)

At this time, the etching end point of the transparent substrate 102 is determined based on the etching end point velocity of the etching control film pattern 106a, and the mold pattern 110 is formed at a depth of 30 nm to 100 nm so as to be transferable.

The hard mask film pattern exposed by the etching of the etching control film pattern is removed to complete the fabrication of the substrate type square nanoimprint master mold having the mold pattern 110 in which the transparent substrate 102 is etched. (e)

As described above, the present invention provides a method of forming an etch control film pattern having the same etch characteristics as that of a transparent substrate, and a method of manufacturing a substrate etch film pattern for use in determining an etch end point of a mold pattern, A nanoimprint mold was prepared.

Thus, a part of the transparent substrate of the present invention is etched to form a nanoimprint mold pattern, whereby a high resolution pattern can be transferred, and the etching end point of the transparent substrate can be ensured accurately and reproducibly.

In the present invention, a nanoimprint mold using a nanoimprint blank mask, that is, a master mold, has been described. Although not shown, the blank mask of the present invention can be used to manufacture a submaster mold through an imprint process. When a resist including a photocurable resin is applied to a blank mask in the manufacture of a submaster mold instead of an electron beam exposure resist, it can be used as a blank mask for a submaster mold.

(Example)

Nano Imprint  Blank mask and nano Imprint Mold  Manufacturing assessment

[Example 1]

Referring to FIG. 2, a transparent substrate 102 made of synthetic quartz glass is prepared to form a blank mask used as a basis for fabricating the substrate type square-phase reversed photomask according to the present invention. The transparent substrate 102 had a size of 6 inches x 6 inches x 0.25 inches and the flatness was controlled to be 500 nm or less in a region of 142 mm ² .

Thereafter, a chromium (Cr) target having a purity of 4N is used, and Ar: N2 = 5 sccm: 2 sccm is injected as a process gas. A sputtering process is performed for 38 seconds at a process power of 0.7 kW, A hard mask film 104 made of CrN with a thickness of 5 nm was formed.

Then, a target of molybdenum silicide (MoSi, composition ratio Mo: Si = 20 at%: 80 at%) was used on the hard mask film 104 and Ar was implanted with N 2 = 7 sccm: 3 sccm as a process gas, A sputtering process was performed for 58 seconds to form an etching control film 106 made of MoSiN having a thickness of 10 nm.

A chemically amplified resist film 108 was formed on the etching control film 106 to a thickness of 80 nm by a spin coating method to complete the production of the final blank mask 100. As a result of analyzing the composition ratio of the blank mask 100 using an AES (Auger Electron Spectroscopy) apparatus, the hard mask layer 104 showed Cr: N = 78 at%: 22 at% : Si: N = 13.2 at%: 65.9 at%: 20.9 at%.

An exposure process was performed on the blank mask on which the hard mask film 104, the etching control film 106 and the resist film 108 were formed on the transparent substrate 100 using EBM-8000 exposure equipment, The resist film pattern 108a exposing a part of the etching control film 106 was formed.

The portion of the etching control film 106 exposed with the resist film pattern 108a as an etching mask was dry-etched with a fluorine (F) etching gas to form an etching control film pattern 106a. At this time, the etch time of the etch control film 106 was confirmed to be 62 seconds by EPD, and the etch rate was 1.61 Å / sec.

After removing the resist film pattern, the portion of the lower hard mask film 104 exposed by the etching mask pattern 106a was dry-etched with a chlorine-based gas to form a hard mask film pattern 104a . At this time, the etch time of the hard mask layer 104 was 63 seconds, and the etch rate was 0.79 A / sec. Thus, the etch rate was 2.0 times slower than that of the upper etch control layer 106.

An etching process using a fluorine (F) etching gas was performed on the exposed portion of the transparent substrate 102. At this time, the etching control film pattern 106a provided on the transparent substrate 102 was simultaneously etched and removed.

The etching control film pattern 106a was etched in 15 seconds under the etching condition of the transparent substrate, and the etching rate was 6.67 Å / sec. At this time, the etching depth of the transparent substrate was 20 nm and the etching rate was 13.33 Å / sec. The etch rate of the etch control film pattern 106a was 0.50 times the etch rate of the transparent substrate. In order to obtain an etch depth of 60 nm on the transparent substrate, the etching was performed for a total of 45 seconds. The etching depth was 59.9 nm, Respectively. The hard mask film pattern 108a remaining on the transparent substrate 102 was removed to complete the production of the final nanoimprint mold.

[Example 2]

In the second embodiment, a hard mask film 104 made of CrN having the same condition is formed on the same transparent substrate 102 as the first embodiment described above.

Then, a target of molybdenum silicide (MoSi, composition ratio Mo: Si = 10 at%: 90 at%) was used on the hard mask film 104 and Ar was implanted with N 2 = 7 sccm: 3 sccm as a process gas, A sputtering process was performed for 63 seconds to form an etch control film 106 made of MoSiN having a thickness of 10 nm.

A chemically amplified resist film 108 was formed on the etching control film 106 to a thickness of 80 nm by a spin coating method to complete the production of the final blank mask 100. In the blank mask 100, the composition ratio of the hard mask layer 104 was found to be Cr: N = 78 at%: 22 at%, and the etching control layer 106 was Mo: Si: N = 8.9 at%: 68.8 at%: 22.3 at%.

The blank mask on which the hard mask film 104, the etching control film 106 and the resist film 108 are formed on the transparent substrate 102 is subjected to an exposure process using an EBM-8000 exposure facility, The resist film pattern 108a exposing a part of the etching control film 106 was formed.

The portion of the etching control film 106 exposed with the resist film pattern 108a as an etching mask was dry-etched with a fluorine (F) etching gas to form an etching control film pattern 106a. At this time, the etching time of the etching control film 106 was confirmed to be 54 seconds by EPD, and the etching rate was 1.85 A / sec.

After removing the resist film pattern, the portion of the lower hard mask film 104 exposed by the etching mask pattern 106a was dry-etched with a chlorine-based gas to form a hard mask film pattern 104a .

An etching process using a fluorine (F) etching gas was performed on the exposed portion of the transparent substrate 102. At this time, the etching control film pattern 106a provided on the transparent substrate 102 was simultaneously etched and removed.

The etching control film pattern 106a was etched in 13 seconds under the etching condition of the transparent substrate 102, and the etching rate was 7.69 Å / sec. At this time, the etching rate of the etching control film pattern 106a was 0.58 times the etching rate of the transparent substrate 102, and the etching process was performed to obtain an etching depth of 60 nm on the transparent substrate. The etching depth was 60.2 nm, . The hard mask film pattern remaining on the transparent substrate 102 was removed to complete the production of the final nanoimprint mold.

[Comparative Example 1]

In this Comparative Example 1, a hard mask film 104 made of CrN under the same conditions was formed on the same transparent substrate 102 as the above-described Example 1 with a nano-imprint blank mask not including the etching control film, 104, a chemically amplified resist film 108 was formed to a thickness of 80 nm by a spin coating method to complete the production of the final blank mask 100.

The blank mask on which the hard mask film 104 and the resist film 108 are formed on the transparent substrate 100 is subjected to an exposure process using an EBM-8000 exposure equipment, Thereby forming a resist film pattern exposing a part of the resist film 104.

The portion of the hard mask film 104 exposed with the resist film pattern as an etching mask was dry etched with a chlorine (Cl) etching gas to form a hard mask film pattern.

After the resist film pattern was removed, an etching process using a fluorine (F) etching gas was performed to obtain an etching depth of 60 nm on a portion of the lower transparent substrate 102 where the hard mask film pattern was exposed by an etching mask. The etch depth was 59.5 nm, resulting in an error of 0.05 nm. The hard mask film remaining on the transparent substrate 102 was removed to complete the production of the final nanoimprint mold.

In the case of the nanoimprint blank mask not including the etching control film on the hard mask film, it is difficult to accurately determine the etching end point of the transparent substrate and an error occurs with respect to the etching depth to be etched. When the etch control film is included on the hard mask film, it is possible to accurately determine the etch end point of the transparent substrate and to confirm that the error is reduced with respect to the etch depth to be etched.

Although the present invention has been described with reference to the experimental examples, the technical scope of the present invention is not limited to the ranges described in the above experimental examples. It will be apparent to those skilled in the art that various modifications and improvements can be made to the examples described above. It is apparent from the description of the claims that the form of such modification or improvement can be included in the technical scope of the present invention.

100: blank mask
102: transparent substrate
104: Hard mask film
106: etch control film
108: Photoresist film
110: mold pattern

Claims (15)

A transparent substrate;
A hard mask film provided on the transparent substrate and having an etch selectivity with the transparent substrate; And
An etch control film provided on the hard mask film and etched into the same etchant as the transparent substrate and having an etch selectivity with the hard mask film; of
The included nanoimprint blank mask
The method according to claim 1,
The hard mask layer and the etch control layer may be formed of a metal such as molybdenum (Mo), nickel (Ni), zirconium (Zr), niobium (Nb), palladium (Pd), zinc (Zn), chromium (Cr) And at least one material selected from Mn, Cd, Mg, Li, Se, Cu, Hf, and W Wherein the material further comprises at least one light element selected from the group consisting of silicon (Si), nitrogen (N), oxygen (O), and carbon (C).
The method according to claim 1,
Wherein the hard mask layer comprises one of chromium (Cr) or chromium (Cr) compounds such as CrN, CrO, CrC, CrON, CrCN, CrCO, CrCON.
The method of claim 3,
Wherein when the hard mask film is made of one of chromium (Cr) compounds, the chromium (Cr) has a content of 40 at% to 90 at%.
The method according to claim 1,
Wherein the hard mask film has a thickness of 2 nm to 8 nm.
The method according to claim 1,
The etch control film may be formed of silicon (Si), molybdenum silicide (MoSi), silicon (Si) such as SiN, SiO, SiC, SiON, SiCN, SiCO, SiCON, MoSiN, MoSiC, MoSiON, MoSiCN, MoSiCO, A nanoimprint blank mask characterized in that it is made of one of compounds containing at least one light element of nitrogen (N), oxygen (O), and carbon (C) in the libenyl suicide (MoSi).
The method according to claim 6,
The etching control film is made of a molybdenum silicide (MoSi) compound having a content of molybdenum (Mo): silicon (Si): light element = 5 at% to 20 at%: 50 at% to 70 at% Wherein the nanoimprint blank mask is a nanoimprint blank mask.
The method according to claim 1,
Wherein the etch control film has an etching rate of 0.1 to 1.5 times the transparent substrate as the nanoimprint blank mask.
The method according to claim 1,
Wherein the etch control film has an etch rate of less than 20 ANGSTROM / sec.
The method according to claim 1,
Wherein the etching control film has a thickness of 3 nm to 15 nm.
The method according to claim 1,
Wherein the transparent substrate has a transmittance of 60% or more with respect to light having a wavelength of 300 nm to 400 nm.
A nanoimprint mold manufacturing method using the nanoimprint blank mask according to any one of claims 1 to 11,
Sequentially forming a hard mask film, an etching control film and a resist film on a transparent substrate to form a nanoimprint blank mask;
Forming a resist film pattern by patterning the resist film;
Etching the etching control film and the hard mask film using the resist film pattern as a mask to form an etching control film pattern and a hard mask film pattern; And
Etching the hard mask film pattern using the etching mask to etch the exposed transparent substrate portion and the etching control film pattern simultaneously to determine an etching end point of the transparent substrate with reference to the etching end point of the etching control film pattern, To form a mold pattern; To
/ RTI > wherein the nano imprint mold is prepared by the method.
13. The method of claim 12,
Further comprising the step of removing the hard mask film pattern after the step of forming the mold pattern.
A nanoimprint mold manufactured by the method of manufacturing a nanoimprint mold according to claim 12, wherein a mold pattern is formed on the transparent substrate.
15. The method of claim 14,
Wherein the mold pattern has a depth of 30 nm to 100 nm.

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