KR20180108223A - Conductive substrate using graphene, preparing method of the same, and device including the same - Google Patents

Abstract

The present invention relates to a conductive substrate, a preparing method thereof, and a device including the conductive substrate. The conductive substrate comprises: a substrate; a UV-patternable hard-coating film formed on the substrate and having a pattern; and a metal nanowire-graphene composite layer formed on a pattern of the UV-patternable hard-coating film.

Description

TECHNICAL FIELD [0001] The present invention relates to a conductive substrate using graphene, a method of manufacturing the conductive substrate, and a device including the conductive substrate. [0002]

The present invention relates to a conductive substrate comprising a metal nanowire-graphene composite layer, a method of manufacturing the conductive substrate, and a device comprising the conductive substrate.

A touch screen panel (TSP) is a screen equipped with a special input device for receiving the position of a touch when it is in contact with a hand. The touch screen panel is mainly composed of a capacitive type, a resistive type, a surface ultrasonic type, . Currently, touch screen panels widely used in mobile displays are mainly composed of ITO, Al, Ti. Mo and the like, but a specification that is more sensitive than a conventional touch screen panel is required for a large screen display (e.g., a TV, a laptop, a monitor, especially a TV of 42 inches or more). To meet this demand, research is needed on materials with lower electrical conductivity and lower resistance.

Korean Patent Laid-Open Publication No. 2017-0023489 discloses a transparent multilayer thin film for display and a manufacturing method thereof.

The present invention provides a conductive substrate including a metal nanowire-graphene composite layer, a method of manufacturing the conductive substrate, and a device including the conductive substrate.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to a first aspect of the present invention, A UV-patternable hard-coating film (UPHC) having a pattern formed on the substrate; And a metal nanowire-graphene composite layer formed on the pattern of the UV-patternable hard-coating layer.

According to one embodiment of the invention, the graphene of the metal nanowire-graphene composite layer may comprise graphene flakes.

A second aspect of the invention provides a device comprising a conductive substrate comprising a metal nanowire-graphene composite layer according to the first aspect of the present disclosure.

In one embodiment of the present invention, a device comprising a conductive substrate comprising the metal nanowire-graphene composite layer may be, but is not limited to, a display or a photovoltaic device.

A third aspect of the invention provides a method of forming a hard-coating layer, comprising: forming a UV-patternable hard-coating layer on a first release film; Forming a metal nanowire-graphene composite layer on the UV-patternable hard-coating layer; Forming a second release film on the metal nanowire-graphene composite layer; Removing the first release film and transferring the UV-patternable hard-coating layer, the metal nanowire-graphene composite layer, and the second release film to a substrate and then removing the second release film; And patterning the UV-patternable hard-coating layer and the metal nanowire-graphene composite layer by a photolithography process.

According to embodiments of the present disclosure, by using the composite layer of metal nanowires and graphene, it is possible to provide a conductive substrate having higher electrical conductivity while having a lower resistance, and using such a conductive substrate, A transparent and flexible conductive substrate for a touch screen panel that can be applied can be manufactured.

According to embodiments of the present application, an additional coating of an antioxidant layer on the metal nanowire-graphene composite layer to produce the conductive substrate can prevent damage, such as oxidation, of the conductive substrate, which can occur in the process And reliability can be improved accordingly.

According to embodiments of the present disclosure, the addition of graphene flakes, metal nanowires, and dispersant materials together with an aqueous binder has the disadvantages encountered with conventional graphene flakes, i.e., they are not chemically and physically connected, And thus the sheet resistance and light transmittance of the conductive substrate can be increased.

According to embodiments of the present invention, the conductive substrate is manufactured by a photolithography method using a film transfer method and a UV-patternable hard coating layer (UPHC) without using a conventionally used photoresist and an etching solution Touch screen panel, and the like. That is, the manufacturing method according to the embodiments of the present invention can be applied to a conventional sputter, wet, photoresist, or the like using a metal nanowire-graphene composite layer formed on a UV- The process can be conveniently simplified.

The conductive substrate according to embodiments of the present invention can solve problems such as reduction in conductivity induced from graphene, breakdown voltage induced from metal nanowires, and reduction in safety, so that a flexible display or a large screen It can be used not only as a panel of a display but also as a substitute for ITO which is a conventional material in the related technical field.

1 is a flowchart showing a method of manufacturing a conductive substrate using a UV-patternable hard coating layer and a film transfer method in one embodiment of the present invention.
2 is a schematic diagram showing a method of manufacturing a conductive substrate using a UV-patternable hard coating layer and a film transfer method in one embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, the term "oxidized graphene" is also referred to as graphene oxide or graphene oxide and may be abbreviated as "GO ". The oxide graphene refers to a material obtained by widening a gap between atomic layers constituting graphite oxide which is a layered material composed of carbon, hydrogen, and oxygen. The graphite oxide can be produced typically by a method represented by the Hummers and Offeman method. For example, graphite can be produced by a method in which graphite is mixed with a strong acid such as sulfuric acid, sodium nitrate, potassium permanganate, Can be obtained by reacting with an oxidizing agent. As a method for increasing the distance between the atomic layers of the graphite oxide, various known methods may be employed. For example, dispersion in a basic solvent, ultrasonic treatment, and heat treatment may be used.

Throughout this specification, the term "graphene " means that a plurality of carbon atoms are covalently linked to one another to form a polycyclic aromatic molecule, and in particular, a densely packed, means a planar sheet of one atom thick consisting of sp ² -bonding carbon atoms. Throughout this specification, the graphene may be a non-tubular material and may also be referred to as a graphene nanoplatelet (GNP; nanographene platelet, NGP). The thickness of the graphene nanoplate may be, for example, about 0.34 nm to about 100 nm. The graphene may have a specific surface area of about 50 to 750 m ² / g and an aspect ratio of about 1 to 60,000. For a more detailed description of graphene and its manufacturing method and the like, reference can be made to International Patent Publication No. WO 2014/076259, which is incorporated herein by reference in its entirety.

Graphene or graphene flakes herein can be obtained by reducing the graphene oxide (GO), and the graphene thus obtained is often referred to as "reduced graphene oxide (rGO) Oxide ". The reduction process may be performed by various known methods, for example, a method of reacting with one or more reducing agents represented by hydrazine compounds including hydrazine hydrate, a method of exposing to hydrogen plasma, A method of exposing to a strong light, a method of heating at a high temperature using a furnace, a method of heating after adding urea, and the like, but the present invention is not limited thereto.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as " including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. The terms " about ", " substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure. The word " step (or step) " or " step " used to the extent that it is used throughout the specification does not mean " step for.

Throughout this specification, the term " combination (s) thereof " included in the expression of the machine form means a mixture or combination of one or more elements selected from the group consisting of the constituents described in the expression of the form of a marker, Quot; means at least one selected from the group consisting of the above-mentioned elements.

Throughout this specification, the description of "A and / or B" means "A or B, or A and B".

Hereinafter, embodiments and examples of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to these embodiments and examples and drawings.

According to a first aspect of the present invention, A UV-patternable hard-coating film (UPHC) having a pattern formed on the substrate; And a metal nanowire-graphene composite layer formed on the pattern of the UV-patternable hard-coating layer.

In one embodiment of the invention, the conductive substrate may be one having high electrical conductivity and low resistance by simultaneously including the metal nanowire and graphene.

In one embodiment of the present invention, the conductive substrate may further include an anti-oxidation layer formed on the metal nanowire-graphene composite layer. For example, the conductive substrate includes a substrate; A UV-patternable hard-coating film having a pattern formed on the substrate; A metal nanowire-graphene composite layer formed on the pattern of the UV-patternable hard-coating layer; And an anti-oxidation layer formed on the metal nanowire-graphene composite layer.

In one embodiment of the present invention, by further including an oxidation-preventing layer formed on the metal nanowire-graphene composite layer, it is possible to prevent damage such as oxidation of a conductive substrate that may occur in the process, The reliability of the conductive substrate can be improved, but the present invention is not limited thereto.

In one embodiment of the present invention, the substrate can use various substrates to be applied to the device without particular limitation. For example, the substrate may itself be a display panel, transparent, or transparent and flexible, and may include glass, metal, oxide, silicon, or polymer substrates, . For example, the polymer substrate may be formed of a material selected from the group consisting of polycarbonate (PC), polyethylsulfone (PES), polyethylene phthalate, polyethylene terephthalate (PET), polymethylmethacrylate , Polymethylmethacrylate (PMMA), polystyrene (PS), cyclic olefin copolymer, polyethylene naphthalate (PEN), polyimide, and combinations thereof. But it is not limited thereto.

In one embodiment of the present invention, when the conductive substrate includes the transparent substrate or the transparent and flexible substrate, excellent electrical conductivity and transmittance can be used as a substitute for a transparent metal oxide electrode such as a conventional ITO or FTO But may not be limited thereto.

In one embodiment of the invention, the content of the UV-patternable hard-coating layer can be found in Korean Patent Publication No. 2016-0065914 as a reference.

Referring to the above reference, the UV-patternable hard-coating layer comprises at least one monomeric or polymeric compound having at least one functional group and being polymerized by reaction with an ethylenically unsaturated compound under the action of actinic radiation, , A block-resistant thermoplastic layer comprising a photoinitiator, other additives, a non-functional polymer and / or a filler, and may be characterized as being final-cured by subsequent polymerization induced by actinic radiation . For example, the monomeric or polymeric compound may include, but is not limited to, esters, carbonates, acrylates, ethers, urethanes or amides or polymeric compounds of the above-described structural types.

The UV-patternable hard-coat layer may also use any desired mixture of such monomers and / or polymers containing at least one group polymerizable under the action of actinic radiation.

The UV-patternable hard-coat layer may be washable by conventional solvents and may be UV curable. For example, the UV-patternable hard-coating layer may be chemically resistant to the solvent-cleaning development process, thus resulting in the formation of a relief pattern on the substrate.

If there is a layer of conductive material on or under the UV-patternable hard-coat layer, the conductive pattern can be obtained by a non-contact wash with conventional solvents without a traditional lithographic-etch process. For example, it can be protected from dangerous strong acids, strong oxidants or commercial etchants during the patterning.

In one embodiment of the invention, the graphene may comprise graphene or doped-graphene prepared by a variety of methods, for example, the graphene may comprise graphene flakes, But may not be limited thereto. The graphene is produced by forming a large-area graphene for mass production or a graphene flake for producing a graphene powder or a dispersion solution. Large-area graphenes are suitable for transparent electrodes used in touch panels of smart phones, and the graphene flakes have various uses such as conductive inks, polymer composite materials, and catalysts. Graphene flake is produced by oxidizing graphite to produce oxidized graphene and then reducing it again. Since graphene's own structure is fragile and defective during the process of oxidizing graphite, it is difficult to obtain high quality, It is still required to improve the manufacturing process, physical properties, and the like when manufacturing devices.

In one embodiment of the present invention, the graphene flake is a nano-sized conductive material having a relatively low resistance value and a high electrical conductivity.

In one embodiment of the invention, the graphene flake may have a length of about 5 μm or less, but may not be limited thereto. For example, the length of the graphene flake may be less than about 5 占 퐉, about 10 nm to about 5 占 퐉, about 10 nm to about 3 占 퐉, about 10 nm to about 1 占 퐉, about 10 nm to about 100 nm, from about 100 nm to about 3 탆, from about 100 nm to about 2 탆, from about 100 nm to about 1 탆, from about 100 nm to about 500 nm, from about 1 탆 to about 5 탆, from about 100 nm to about 4 탆, From about 1 μm to about 4 μm, from about 1 μm to about 3 μm, from about 1 μm to about 2 μm, from about 2 μm to about 5 μm, from about 2 μm to about 4 μm, from about 2 μm to about 3 , about 3 μm to about 5 μm, about 3 μm to about 4 μm, or about 4 μm to about 5 μm.

In one embodiment of the invention, the metal nanowire may comprise a metal selected from the group consisting of Ag, Au, Cu, and combinations thereof, and the metal nanowire may include a metal or a metal alloy But may be, but not limited to, a metal mixture.

In one embodiment of the invention, the metal nanowires may have a length of greater than or equal to about 10 micrometers, and may have a thickness of from about 1 nanometer to about 1 micrometer, but are not limited thereto.

In one embodiment of the present invention, when the length of the metal nanowire is less than about 10 m, the resistance value may not be measured, and when the length of the metal nanowire is greater than about 1,000 m, , High haze, or low transmittance, the length of the metal nanowires is suitably from about 10 [mu] m to about 1,000 [mu] m. For example, the length of the metal nanowires may be at least about 10 占 퐉, about 10 占 퐉 to about 1,000 占 퐉, about 10 占 퐉 to about 800 占 퐉, about 10 占 퐉 to about 600 占 퐉, about 10 占 퐉 to about 400 占 퐉, from about 10 탆 to about 100 탆, from about 10 탆 to about 50 탆, from about 50 탆 to about 100 탆, from about 100 탆 to about 1,000 탆, from about 100 탆 to about 800 탆, from about 100 탆 to about 100 탆, About 200 μm to about 800 μm, about 200 μm to about 600 μm, about 200 μm to about 400 μm, about 100 μm to about 400 μm, about 100 μm to about 200 μm, about 200 μm to about 1,000 μm, from about 400 탆 to about 1,000 탆, from about 400 탆 to about 1,000 탆, from about 400 탆 to about 800 탆, from about 400 탆 to about 600 탆, from about 600 탆 to about 1,000 탆, Or from about 10 [mu] m to about 30 [mu] m.

If the thickness of the metal nanowire is less than about 1 nm, the resistance value may not be measured. If the thickness of the metal nanowire is greater than about 1,000 nm, the thickness of the metal nanowire is excessively thick The thickness of the metal nanowire is suitably from about 1 nm to about 1,000 nm since it may represent a haze value or a low transmittance. For example, the thickness of the metal nanowire may be from about 1 nm to about 1 μm, from about 1 nm to about 1,000 nm, from about 1 nm to about 800 nm, from about 1 nm to about 600 nm, from about 1 nm to about 400 nm From about 1 nm to about 200 nm, from about 1 nm to about 100 nm, from about 1 nm to about 50 nm, from about 100 nm to about 1,000 nm, from about 100 nm to about 800 nm, from about 100 nm to about 600 nm, From about 100 nm to about 400 nm, from about 100 nm to about 200 nm, from about 200 nm to about 1,000 nm, from about 200 nm to about 800 nm, from about 200 nm to about 600 nm, from about 200 nm to about 400 nm, From about 400 nm to about 800 nm, from about 400 nm to about 600 nm, from about 600 nm to about 1,000 nm, from about 600 nm to about 800 nm, or from about 800 nm to about 1,000 nm, But may not be limited thereto.

In one embodiment of the invention, the thickness of the metal nanowire-graphene composite layer may be from about 1 [mu] m to about 10 [mu] m, but is not limited thereto.

In one embodiment of the present invention, when the thickness of the metal nanowire-graphene composite layer is less than about 1 μm, it may not serve as an electrode, and the thickness of the metal nanowire-graphene composite layer is about 10 the thickness of the metal nanowire-graphene composite layer is suitably from about 1 [mu] m to about 10 [mu] m, as the transmittance can be significantly reduced. For example, the thickness of the metal nanowire-graphene composite layer may be from about 1 μm to about 10 μm, from about 1 μm to about 8 μm, from about 1 μm to about 6 μm, from about 1 μm to about 4 μm, from about 1 from about 2 탆 to about 4 탆, from about 4 탆 to about 10 탆, from about 4 탆 to about 2 탆, from about 2 탆 to about 10 탆, from about 2 탆 to about 8 탆, from about 2 탆 to about 6 탆, From about 6 [mu] m to about 8 [mu] m, from about 8 [mu] m to about 10 [mu] m, or from about 1 [mu] m to about 3 [mu] m, .

In one embodiment of the present invention, in the metal nanowire-graphene composite layer, the weight ratio of the metal nanowire and the graphene may be about 10 to 100, but is not limited thereto. For example, the weight ratio of the metal nanowire and the graphene may be about 10 to 100: 1, about 20 to 100: 1, about 30 to 100: 1, about 40 to 100: 1, about 50 to 100: About 60 to 100: 1, about 70 to 100: 1, about 80 to 100: 1, about 90 to 100: 1, about 10 to 90: 1, about 10 to 80: But is not limited to, about 10 to 60: 1, about 10 to 50: 1, about 10 to 40: 1, or about 10 to 30:

Since the nano-sized graphene flakes are not chemically or mechanically connected, they have a disadvantage that their chemical stability or mechanical stability is lowered. That is, since the probability of contact between a plurality of graphene flakes is low only by mixing and dispersing a simple graphene flake, the electrical conductivity is formed lower than a required value, and when the concentration of graphene flake is increased , The light transmittance may be deteriorated.

In an embodiment of the present invention, the metal nanowire-graphene composite layer of the conductive substrate may further include a binder to solve the problems caused by the graphene flake. For example, by further including the binder, viscosity, corrosion, adhesion, and dispersion of the metal nanowires can be controlled or improved.

In one embodiment of the present invention, since the conductive substrate includes graphene flakes, metal nanowires and a binder at the same time, it is possible to prevent problems caused by agglomeration generated in conventional graphene flakes, But may not be limited to, increased sheet resistance and light transmittance.

In one embodiment of the present invention, the binder is selected from, for example, acrylic resin, styrene resin, epoxy resin, amide resin, amide epoxy resin, alkyd resin, phenol resin, ester resin, urethane resin, An epoxy acrylate resin obtained by the reaction of acrylic acid, an epoxy acrylate resin, an acid-modified epoxy acrylate resin obtained by the reaction of an acid anhydride, and combinations thereof. But may not be limited.

In one embodiment of the invention, the patterned UV-patternable hard coating layer and the metal nanowire-graphene composite layer may be further formed with an antioxidant layer. For example, by further including the antioxidant layer, it is possible to prevent damage such as oxidation of a conductive substrate, which may occur in a manufacturing process of a conductive substrate, thereby improving reliability. However, have.

In one embodiment herein, the thickness of the antioxidant layer may be from about 1 nm to about 1 占 퐉, but may not be limited thereto.

In one embodiment of the present invention, if the thickness of the antioxidant layer is less than about 1 nm, the antioxidant layer may be insufficiently antioxidized because it is too thin, and if the thickness of the antioxidant layer is greater than about 1 탆, The thickness of the antioxidant layer is suitably from about 1 nm to about 1 占 퐉. From about 1 nm to about 1 nm, from about 1 nm to about 1,000 nm, from about 1 nm to about 800 nm, from about 1 nm to about 600 nm, from about 1 nm to 400 nm, from about 1 nm to 200 nm, About 100 nm to about 100 nm, about 1 nm to about 50 nm, about 50 nm to about 100 nm, about 100 nm to about 1,000 nm, about 100 nm to about 800 nm, about 100 nm to about 600 nm, nm, about 200 nm to 1,000 nm, about 200 nm to 800 nm, about 200 nm to 600 nm, about 200 nm to 400 nm, about 400 nm to 1,000 nm, about 400 nm to 800 nm, , About 600 nm to about 1,000 nm, about 600 nm to about 800 nm, or about 800 nm to about 1,000 nm.

In one embodiment herein, the antioxidant may include, but is not limited to, tetraethyl orthosilicate (TEOS) or multifunctional acrylate monomers. For example, the multifunctional acryl lake monomer may include, but is not limited to, polymethacrylate, urethane acrylate, trimethane propane triacrylate, or butyl acrylate.

The second aspect of the invention provides a device comprising a conductive substrate according to the first aspect of the present application. For the device according to the second aspect of the present application, a detailed description of the parts overlapping with the first aspect of the present application is omitted, but the description in the first aspect of the present application is omitted in the second aspect of the present application Lt; / RTI >

In one embodiment of the invention, the device may be a display or a photovoltaic device.

In one embodiment of the present invention, the display may be a flexible display, an LCD display, an LED display, an OLED display, a flat panel display, a touch screen panel, a flexible display, and the like; It may also be a CRT display, a PDP display, a touch panel, or a digital paper, but is not limited thereto. The display can also be used to display a still image or a moving image such as a television receiver, various audio / video systems, a home theater system, a desktop computer device, a computer monitor device, a camera device, And may include various devices that can be displayed. For example, the portable terminal device may include various devices such as a notebook computer device, a cellular phone, a smart phone, a tablet PC, an electronic book terminal device, a personal digital assistant device (PDA), a navigation terminal device, .

In one embodiment of the present invention, the photoelectric device may include a device capable of converting light energy into electric energy, or converting electric energy into light energy. For example, the photoelectric device may include, but is not limited to, a solar cell or the like.

A third aspect of the invention provides a method of forming a hard-coating layer, comprising: forming a UV-patternable hard-coating layer on a first release film; Forming a metal nanowire-graphene composite layer on the UV-patternable hard-coating layer; Forming a second release film on the metal nanowire-graphene composite layer; Removing the first release film and transferring the UV-patternable hard-coating layer, the metal nanowire-graphene composite layer, and the second release film to a substrate and removing the second release film; And patterning the UV-patternable hard-coating layer and the metal nanowire-graphene composite layer by a photolithography process.

Although a detailed description of the manufacturing method according to the third aspect of the present invention is omitted for the sake of simplicity, the description of the first aspect of the present application is omitted from the third aspect of the present invention The same can be applied.

In the manufacturing method according to one embodiment of the present invention, the manufacturing method of the conductive substrate can be simplified without using a conventional process such as sputtering, wetting, photoresist, etching, and the like. For example, the method of manufacturing the conductive substrate may be a method of forming a pattern directly on a substrate or electrode by a photolithography process using a film transfer method, unlike a complicated method including conventional sputtering, wetting, photoresist, When a touch screen panel is manufactured using the above-described method for manufacturing a conductive substrate, problems such as a decrease in conductivity induced from graphene, a breakdown voltage induced from metal nanowires, and a decrease in safety Can be solved.

A method of manufacturing a conductive substrate according to an embodiment of the present invention can be described in detail below with reference to flowcharts and schematic diagrams shown in Figs. 1 and 2.

1 and 2, a method of manufacturing the conductive substrate includes the steps of: (a) forming a UV-patternable hard-coating layer on a first release film; (b) forming a metal nanowire-graphene composite layer on the UV-patternable hard-coating layer; (c) forming a second release film on the metal nanowire-graphene composite layer; (d) removing the first release film and transferring the UV-patternable hard-coating layer, the metal nanowire-graphene composite layer, and the second release film to a substrate, and then removing the second release film ; (e) patterning the transferred UV-patternable hard-coating layer and the metal nanowire-graphene composite layer through a photolithography process; And (f) forming an antioxidant layer on the patterned UV-patternable hard-coating layer and the metal nanowire-graphene composite layer.

In the step (a), a solution containing a UV-patternable hard-coating precursor is coated on the first release film. The coating method can be used without any particular limitation in known methods. For example, the patterned UV-patternable hard-coat layer may be formed by coating a solution comprising the UV-patternable hard-coating precursor on the first release film and then drying the solution at a temperature in the range of about 100 < But may be formed by thermal curing by heat treatment, but the present invention is not limited thereto.

In one embodiment of the present invention, the content of the release film is described in Japanese Patent Application Laid-Open No. 2017-035885 as a reference.

Referring to the above reference, the base material of the above-mentioned "release film" is prepared by adding a silicone composition and an inorganic particle exhibiting an antistatic effect to either or both surfaces of a substrate film for uniform running and good adhesion And may mean a film comprising a coating layer. The releasing film can be uniformly peeled off, has excellent residual adhesive force and antistatic property, and can be easily applied to various applications and process conditions. Thus, it can be used for protecting a temporary support and an adhesive layer of a component material having adhesiveness. For example, the release film may be an electrical or electronic device, for example, a functional film used as a substrate to protect an adhesive layer of a display material, or an MLCC multichannel ceramic capacitor. , Chip varistors, chip inductors, etc., or may be used as a base film of a display such as ACF anisotropic conductive film, DAF (die attached film).

Further, the release film may be used as a film for protecting an adhesive surface for a pressure-sensitive adhesive, an adhesive, a dapper or the like, or a film which can be used as a carrier sheet for forming a sheet of resin, for example, a ceramic sheet or an electrode sheet . The release film in the form of a sheet may serve to temporarily protect the adhesive bonding surface of the adhesive product from contamination with dust, debris, moisture and other contaminants until the product is finally manufactured or used, Therefore, it may be separated from the adhesive side just before use of the product or just before being finally produced.

The release film may comprise a base film and a coating layer formed on at least one surface of the base film. The coating layer may be one capable of imparting peelability to the surface of the product while adhering to the product, and may be, for example, coated with silicone or the like, but is not limited thereto.

The coating composition constituting the coating layer of the release film may be prepared in an emulsion type or a solvent type depending on the coating method or use, and the emulsion type composition is mainly applied to the inline coating, and the solvent type composition is applied to the off-line coating . When the emulsion type composition is used, it may be environmentally stable, but when applied as an in-line coating, workability may be improved, but the present invention is not limited thereto.

For example, when the emulsion type composition is used, specifically, the coating composition may include, but not limited to, a silicone-based binder resin and a conductive polymer, a platinum chelate catalyst, and water.

The coating layer may contain a polyarylate resin in order to improve the releasability of the coated body. By including the polyarylate resin, heat resistance of the release film is improved, and even after a process such as heating, peelability to a transferred body can be good.

The base film of the release film can be used without limitation as long as it has mechanical strength, chemical resistance and heat resistance, and examples thereof include polyolefin resins such as polyethylene and polypropylene; Polyamide resins such as nylon 6 and nylon 66; Polyethylene terephthalate, polybutylene terephthalate, polyethylene-2,6-naphthalate, polytrimethylene terephthalate; Or a diol component such as diethylene glycol, neopentyl glycol, 1,4-cyclohexanedimethanol and polyalkylene glycol and a dicarboxylic acid such as adipic acid, sebacic acid, phthalic acid, isophthalic acid, and 2,6-naphthalenedicarboxylic acid A polyester resin obtained by copolymerizing a carboxylic acid component and a carboxylic acid component may be used, but the present invention is not limited thereto.

The base film may be a single layer or a multi-layer, and the base film may be added with various additives including an antioxidant, an anti-light agent, a gelling agent, an organic wetting agent, an ultraviolet absorber, or a surfactant if necessary.

The base film may be transparent or colored, and in the case of the colored type, the method of coloring may be not particularly limited as long as it can be colored with a pigment or a dye.

Subsequently, in step (b), a metal nanowire-graphene composite layer is formed by coating a solution containing metal nanowires and graphene flakes on the UV-patternable hard-coating layer. The solution may include a binder in addition to the metal nanowire and the graphene flake, and the aggregation of the graphene flake may be reduced due to the addition of the metal nanowire and the binder.

In step (c), a second release film may be formed on the metal nanowire-graphene composite layer. In step (d), after the first release film is removed, the UV-patternable hard- , The metal nanowire-graphene composite layer, and the second release film are transferred to the substrate. At this time, the UV patternable hard-coating layer may be transferred in a direction to contact the substrate. For example, the substrate may be a display panel, but is not limited thereto. After being transferred to the substrate, the second release film may be removed for a patterning process or the like.

Next, in step (e), the patterned UV-patternable hard-coating layer transferred onto the substrate and the metal nanowire-graphene composite layer are patterned through a photolithography process.

As the photolithography, methods and materials known in the art can be used. For example, a method of irradiating an object to be patterned with an actinic ray through a negative or positive mask pattern (mask exposure method) But is not limited thereto. As the light source of the active light ray, a known light source such as a carbon arc, a mercury vapor arc or the like, an ultraviolet ray such as an ultrahigh pressure mercury lamp, a high pressure mercury lamp, or a xenon lamp, visible light or the like is effectively radiated. It is also possible to effectively radiate ultraviolet rays or visible light such as Ar ion lasers and semiconductor lasers. It is also possible to effectively radiate visible light such as a photographic flat bulb or a solar lamp. A method of irradiating an object to be patterned with an actinic ray by a direct drawing method using a laser exposure method or the like may be employed. For example, when the photolithography is performed in a positive type, the region not covered by the photo-mask in the photolithographic process is exposed by an active light source, for example UV. After being exposed, the exposed region may be removed by the developing solution to complete the patterning.

In one embodiment of the present invention, the developing solution may be an organic solvent, for example, 1,1,1-trichloroethane, N-methylpyrrolidone, N, N-dimethylformamide, Cyclohexanone, methyl isobutyl ketone, or? -Butyrolactone, but the present invention is not limited thereto. The patterning by the photolithography process can simplify a complicated process including a conventional sputter, wet, and photoresist.

In one embodiment of the present invention, the patterning may be facilitated by using a film or a film on which the UV-patternable hard coating layer and the metal nanowire-graphene composite layer are laminated, but is not limited thereto .

Finally, in step (f), a solution containing an antioxidant is coated on the patterned UV-patternable hard-coating layer and the metal nanowire-graphene composite layer transferred to the substrate to form an antioxidant layer. As a non-limiting example, the antioxidant may be one comprising TEOS or a multifunctional acrylate monomer, wherein the solution comprising the antioxidant is coated and then cured through heat treatment to form a patterned UV-patternable The hard-coating layer and the metal nanowire-graphene composite layer are coated with an antioxidant layer.

In one embodiment of the invention, the conductive substrate may be one having high electrical conductivity and low resistance by simultaneously including the metal nanowire and graphene.

In one embodiment of the invention, the substrate may be a display panel, or it may be transparent, transparent, or flexible and may comprise glass, metal, oxide, silicon, or polymer substrates, But may not be limited. For example, the polymer substrate may be made of polycarbonate (PC), polyethylsulfone (PES), polyethylene phthalate, polyethylene terephthalate (PET), polymethylmethacrylate A material selected from the group consisting of polymethylmethacrylate (PMMA), polystyrene (PS), cyclic olefin copolymer, polyethylene naphthalate (PEN), polyimide, But is not limited thereto.

In one embodiment of the present disclosure, when using the transparent substrate or the transparent and flexible substrate, the conductive substrate can be used as a substitute for a transparent metal oxide electrode such as a conventional ITO or FTO due to its excellent electrical conductivity and transmittance However, the present invention is not limited thereto.

In one embodiment of the invention, the UV-patternable hard-coating layer having the pattern may be formed in a first release film. For example, a UV-patternable hard-coating layer having the pattern may be formed by coating the first mold release film with the UV-patternable hard-coating solution, and after the first type film is removed, the UV - The patternable hard-coating layer may be, but not limited to, transferred to the substrate.

In one embodiment of the invention, the content of the UV-patternable hard-coating layer can be found in Korean Patent Publication No. 2016-0065914 as a reference.

Referring to the above reference, the UV-patternable hard-coating layer comprises at least one monomeric or polymeric compound having at least one functional group and being polymerized by reaction with an ethylenically unsaturated compound under the action of actinic radiation, , A block-resistant thermoplastic layer comprising a photoinitiator, other additives, a non-functional polymer and / or a filler, and may be characterized as being final-cured by subsequent polymerization induced by actinic radiation . For example, the monomeric or polymeric compound may include, but is not limited to, esters, carbonates, acrylates, ethers, urethanes or amides or polymeric compounds of the above-described structural types.

The UV-patternable hard-coat layer may also use any desired mixture of such monomers and / or polymers containing at least one group polymerizable under the action of actinic radiation.

The UV-patternable hard-coat layer may be washable by conventional solvents and may be UV curable. For example, the UV-patternable hard-coating layer may be chemically resistant to the solvent-cleaning development process, thus resulting in the formation of a relief pattern on the substrate.

If there is a layer of conductive material on or under the UV-patternable hard-coat layer, the conductive pattern can be obtained by a non-contact wash with conventional solvents without a traditional lithographic-etch process. For example, it can be protected from dangerous strong acids, strong oxidants or commercial etchants during the patterning.

In one embodiment of the invention, the graphene may comprise graphene or doped-graphene prepared by a variety of methods, for example, the graphene may comprise graphene flakes, But may not be limited thereto. In one embodiment of the invention, the graphene may comprise, but not be limited to, graphene flakes.

In one embodiment of the present invention, the metal nanowire may comprise a metal selected from the group consisting of Ag, Au, Cu, and combinations thereof, and the metal nanowire may be an elemental metal, But are not limited thereto.

In one embodiment of the present invention, the graphene flake is a nano-sized conductive material having a relatively low resistance value and a high electrical conductivity.

In one embodiment of the invention, the graphene flake may have a length of about 5 μm or less, but may not be limited thereto. For example, the length of the graphene flake may be less than about 5 占 퐉, about 10 nm to about 5 占 퐉, about 10 nm to about 3 占 퐉, about 10 nm to about 1 占 퐉, about 10 nm to about 100 nm, from about 100 nm to about 3 탆, from about 100 nm to about 2 탆, from about 100 nm to about 1 탆, from about 100 nm to about 500 nm, from about 1 탆 to about 5 탆, from about 100 nm to about 4 탆, From about 1 μm to about 4 μm, from about 1 μm to about 3 μm, from about 1 μm to about 2 μm, from about 2 μm to about 5 μm, from about 2 μm to about 4 μm, from about 2 μm to about 3 , about 3 μm to about 5 μm, about 3 μm to about 4 μm, or about 4 μm to about 5 μm.

In one embodiment of the invention, the length of the metal nanowire may be about 10 μm or more, and the thickness may be about 1 nm to 1 μm, but the present invention is not limited thereto.

In one embodiment of the present invention, when the length of the metal nanowire is less than about 10 m, the resistance value may not be measured, and when the length of the metal nanowire is greater than about 1,000 m, , High haze value, or low transmittance, the length of the metal nanowires is suitably from about 10 [mu] m to about 1,000 [mu] m. For example, the length of the metal nanowires may be, for example, at least about 10 占 퐉, from about 10 占 퐉 to about 1,000 占 퐉, from about 10 占 퐉 to about 800 占 퐉, from about 10 占 퐉 to about 600 占 퐉, From about 10 μm to about 200 μm, from about 10 μm to about 100 μm, from about 10 μm to about 50 μm, from about 50 μm to about 100 μm, from about 100 μm to about 1,000 μm, from about 100 μm to about 800 μm, From about 100 μm to about 600 μm, from about 100 μm to about 400 μm, from about 100 μm to about 200 μm, from about 200 μm to about 1,000 μm, from about 200 μm to about 800 μm, from about 200 μm to about 600 μm, From about 400 μm to about 1,000 μm, from about 400 μm to about 1,000 μm, from about 400 μm to about 800 μm, from about 400 μm to about 600 μm, from about 600 μm to about 1,000 μm, from about 600 μm to about 800 μm, Or about 10 [mu] m to about 30 [mu] m.

If the thickness of the metal nanowire is less than about 1 nm, the resistance value may not be measured. If the thickness of the metal nanowire is greater than about 1,000 nm, the thickness of the metal nanowire is excessively thick The thickness of the metal nanowire is suitably from about 1 nm to about 1,000 nm since it may represent a haze value or a low transmittance. For example, the thickness of the metal nanowires may range from about 1 nm to about 1 μm, from about 1 nm to about 1,000 nm, from about 1 nm to about 800 nm, from about 1 nm to about 600 nm, from about 1 nm to about 400 nm, From about 1 nm to about 200 nm, from about 1 nm to about 100 nm, from about 1 nm to about 50 nm, from about 100 nm to about 1,000 nm, from about 100 nm to about 800 nm, from about 100 nm to about 600 nm, from about 200 nm to about 400 nm, from about 200 nm to about 400 nm, from about 100 nm to about 200 nm, from about 200 nm to about 1,000 nm, from about 200 nm to about 800 nm, from about 200 nm to about 600 nm, From about 400 nm to about 800 nm, from about 400 nm to about 600 nm, from about 600 nm to about 1,000 nm, from about 600 nm to about 800 nm, or from about 800 nm to about 1,000 nm, But may not be limited.

In one embodiment of the invention, the graphene flakes may be dispersed together in a solution comprising the metal nanowires to form a metal nanowire-graphene composite layer.

When the graphene flakes are not sufficiently dispersed, aggregation may occur due to van der Waals attraction, and when aggregation occurs, the light transmittance of the graphene flakes may be lowered. In addition, when the graphene flakes are agglomerated, the surface resistivity of the conductive substrate may not be uniform according to the area of the conductive substrate, thereby lowering the electrical conductivity. For example, since the nano-sized graphene flakes are not chemically or mechanically connected, their chemical stability or mechanical stability is deteriorated. That is, since the probability of contact between a plurality of graphene flakes is low only by mixing and dispersing a simple graphene flake, the electrical conductivity is formed lower than a required value, and when the concentration of graphene flake is increased , The light transmittance may be deteriorated.

In an embodiment of the present invention, the metal nanowire-graphene composite layer of the conductive substrate may further include a binder to solve the problems caused by the graphene flake. For example, by further including the binder, viscosity, corrosion, adhesion, and nanowire dispersibility can be controlled or improved.

For example, the metal nanowire-graphene composite layer may be formed by coating the UV-patternable hard coat layer with a solution comprising metal nanowires, graphene flakes, and a binder.

In one embodiment of the invention, the coating may be performed in a known manner and may be carried out in a known manner, for example, by a web coating, slot-die coating, double slit coating, spin coating, dip coating, spray coating, Casting, but may not be limited thereto.

In one embodiment of the present invention, since the conductive substrate includes graphene flakes, metal nanowires and a binder at the same time, it is possible to prevent problems caused by agglomeration generated in conventional graphene flakes, But may not be limited to, increased sheet resistance and light transmittance.

The binder may be, for example, an acrylic resin, a styrene resin, an epoxy resin, an amide resin, an amide epoxy resin, an alkyd resin, a phenol resin, an ester resin, a urethane resin, an epoxy acrylate obtained by the reaction of an epoxy resin with (meth) But are not limited to, resins, epoxy acrylate resins, acid-modified epoxy acrylate resins obtained by the reaction of acid anhydrides, and combinations thereof.

In one embodiment of the invention, a second release film may be formed on the metal nanowire-graphene composite layer. For example, the UV-patternable hard coating layer is formed on the first release film, a metal nanowire-graphene composite layer is formed on the UV-patternable hard coating layer, and the metal nanowire- The second release film may be formed on the second release film.

In one embodiment of the present invention, an antioxidant layer may be further formed by coating a solution containing an antioxidant on the patterned UV-patternable hard coat layer and the metal nanowire-graphene composite layer. For example, by further including the antioxidant layer, it is possible to prevent damage such as oxidation of a conductive substrate, which may occur in a manufacturing process of a conductive substrate, thereby improving reliability. However, have.

In one embodiment herein, the thickness of the antioxidant layer may be from about 1 nm to about 1 占 퐉, but may not be limited thereto.

In one embodiment of the present invention, if the thickness of the antioxidant layer is less than about 1 nm, the antioxidant layer may not sufficiently perform the antioxidant function. If the thickness of the antioxidant layer is greater than about 1 탆, The thickness of the antioxidant layer is preferably from about 1 nm to about 1 占 퐉. For example, the thickness of the antioxidant layer may range from about 1 nm to 1 μm, from about 1 nm to 1,000 nm, from about 1 nm to 800 nm, from about 1 nm to 600 nm, from 1 nm to 400 nm, nm, about 1 nm to 100 nm, about 1 nm to 50 nm, about 50 nm to 100 nm, about 100 nm to 1,000 nm, about 100 nm to 800 nm, about 100 nm to 600 nm, From about 200 nm to about 400 nm, from about 400 nm to about 1,000 nm, from about 400 nm to about 800 nm, from about 100 nm to about 200 nm, from about 200 nm to about 1,000 nm, from about 200 nm to about 800 nm, From about 400 nm to about 600 nm, from about 600 nm to about 1,000 nm, from about 600 nm to about 800 nm, or from about 800 nm to about 1,000 nm.

In one embodiment of the invention, the antioxidant may include, but is not limited to, tetraethyl orthosilicate (TEOS) or multifunctional acrylate monomers. For example, the multifunctional acryl lake monomer may include, but is not limited to, polymethacrylate, urethane acrylate, trimethane propane triacrylate, or butyl acrylate.

In one embodiment of the present invention, the solution containing the antioxidant may be cured through heat treatment after coating, but may not be limited thereto.

In one embodiment herein, the curing may be performed in air at a temperature in the range of from about 50 DEG C to about 200 DEG C, and may be, for example, from about 50 DEG C to about 200 DEG C, from about 50 DEG C to about 180 DEG C, from about 50 About 80 ° C to about 150 ° C, about 50 ° C to about 120 ° C, about 50 ° C to about 80 ° C, about 80 ° C to about 200 ° C, about 80 ° C to about 180 ° C, About 120 DEG C to about 200 DEG C, about 120 DEG C to about 180 DEG C, about 120 DEG C to about 150 DEG C, about 150 DEG C to about 200 DEG C, about 150 DEG C to about 180 DEG C, Deg.] C, or from about 80 [deg.] C to about 100 [deg.] C, although the present invention is not limited thereto.

In one embodiment of the invention, the curing may be performed for about 5 minutes to about 30 minutes. For example, the curing may be performed at a temperature ranging from about 50 DEG C to 200 DEG C for about 5 minutes to about 30 minutes, about 5 minutes to about 20 minutes, about 5 minutes to about 15 minutes, about 5 minutes to about 10 minutes, For about 10 minutes to about 20 minutes, for about 10 minutes to about 15 minutes, for about 15 minutes to about 30 minutes, for about 15 minutes to about 20 minutes, or for about 20 minutes to about 30 minutes, .

According to embodiments of the present disclosure, the addition of graphene flakes, metal nanowires, and optionally dispersant materials together with aqueous binders has the disadvantages encountered with conventional graphene flakes, that is, they are not chemically and physically connected, Can be prevented, and the sheet resistance and light transmittance of the conductive substrate can be increased.

According to embodiments of the present invention, the conductive substrate is manufactured by a photolithography method using a film transfer method and a UV-patternable hard coating layer (UPHC) without using a conventionally used photoresist and an etching solution Touch screen panel, and the like. That is, the manufacturing method according to the embodiments of the present invention can be applied to a conventional sputter, wet, photoresist, or the like using a metal nanowire-graphene composite layer formed on a UV- The process can be conveniently simplified.

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are given to aid understanding of the present invention, and the present invention is not limited to the following examples.

[Example]

1. Fabrication of UV-patternable hard coat layer (UPHC)

For a method of manufacturing a UV-patternable hard coating layer (UPHC), reference can be made to Korean Patent Laid-Open Publication No. 2016-0065914.

With reference to the above references, the components of the UV-patternable hardcoat precursor solution used in this example are as follows: Bayhydrol UV XP 2720/1 is an anionic UV-curable polyurethane dispersion in water by Bayer MaterialScience AG; Bayhydrol UH XP 2648 is an aliphatic, anionic polyurethane dispersion containing polycarbonate in water by Bayer MaterialScience AG; 4-hydroxy-4-methyl-pentanone is a solvent by Kraemer & Martin GmbH; 1-Methoxy-2-propanol is a solvent by Kraemer & Tegoglide 410 is a flow promoter by Evonik Tego Chemie GmbH; BYK 346 is a wetting agent by BYK chemie; Irgacure 500 is a photoinitiator by BASF; Borchi-gel 625 is a nonionic, polyurethane-based thickener without alkylphenol ethoxylate (APEO); Bindzil cc401 is a water-based dispersion of silica nanoparticles by AkzoNobel; Dimethylethanolamine is a pH adjusting agent by Sigma Aldrich; Ebecryl 1200 is an acrylic acrylate oligomeric resin by Allnex; PETIA (pentaerythritol triacrylate) is a reactive diluent by OLNEX; DPHA (dipentaerythritol hexaacrylate) is a reactive diluent by Alnex; Irgacure 184: Butylacetate (1: 1) is a photoinitiator by BASF; BYK 306 is a wetting agent by BYK chemie; Butyl acetate is a solvent by Olex; Desmodur N3390 is an aliphatic polyisocyanate (HDI-trihexylate) by Bayer Material Science AG; Dibutyltin dilaurate-0.1 wt% (ml) is a catalyst by Sigma Aldrich; MIBK-ST is a solvent-based (methyl isobutyl ketone) silica nanoparticle dispersion by Nissan Chemical.

1-1. UPHC precursor solution preparation

UPHC precursor solution 1 :

In a 250 mL round bottomed flask, 10 g of hydroxylpropyl methylcellulose (HPMC) was added to 75.5 mL of heated water (80-85) with stirring. The hot plate was turned off and HPMC and water mixtures were continuously stirred to disperse the HPMC. 124.5 mL cold water was added to the mixture and vigorously stirred for 20 minutes. The mixture was filtered through a 5 [mu] m filter to remove undissolved particles to produce UPHC Precursor Solution 1.

UPHC precursor solution 2 :

In a 100 mL round bottom flask, 2 g of Zonyl FSO-100 fluorosurfactant a-fluoro-O- (2-hydroxyethyl) poly (difluoromethylene) polymer and polyethylene glycol (1: ) And 18.5 mL of water. The mixture was heated to 70 占 폚 to dissolve Zonyl FSO-100 to prepare UPHC precursor solution 2.

0.094 mL of UPHC Precursor Solution 1 and 0.0016 mL of UPHC Precursor Solution 2 were each combined with 4.36 to 4.69 mL of water and stirred for 15 minutes.

1-2. UPHC Formation

Each of the UPHC precursor solutions 1 and 2 prepared in the above 1-1 was coated on a first release film (PET film) by a roll-to-roll method. The film was pre-treated with a corona at 100 W. The UPHC formulation was coated with a single layer and then passed through an oven which was run at < RTI ID = 0.0 > 130 C < / RTI > while the solvent was removed by evaporation. The heating time by the oven was about 6 minutes.

2. Preparation of silver (Ag) nanowire solution containing graphene flakes

The silver (Ag) nanowire solution includes Ag nanowires including a binder, a binder for increasing wettability, and graphene flakes. The Ag nanowire has a length of 10 μm or more and a thickness of 1 nm to 1 μm. In addition, the graphene flakes have a length of 5 μm or less. The binder was added to improve the adhesion and wettability of the intermediate layer. To make the Ag nanowire-graphene composite layer, a web coating method was used. By using the above-mentioned web coating method, it is possible to solve the problem of conductivity derived from the graphene, the breakdown voltage induced from the Ag nanowire, and the reduction of safety.

0.2 to 0.55 mL of Ag nanowire solution, 0.094 mL of UPHC precursor solution 1 and 0.0016 mL of UPHC precursor solution 2, and 4.36 to 4.69 mL of water, A wire nanowire dispersion was added to the sample vial. The suspension was stirred at ambient conditions for at least 15 minutes.

3. Preparation of solutions containing antioxidants

A solution containing an antioxidant is used as a layer for preventing oxidation of Ag nanowire and graphene flake. The solution containing the antioxidant was based on TEOS, polymethacrylate, urethane acrylate, trimethane propane triacrylate, or butyl acrylate. Ethanol and acetic acid diluted in deionized water were also added.

4. Fabrication of conductive substrate

4-1. Example 1: Preparation of conductive substrate

A solution containing the Ag nanowires, the graphene flakes and the binder was coated on a UV-patternable hard-coating layer (UPHC) formed on the prepared first release film to form an Ag nanowire-graphene composite layer. 0.15 wt% Ag nanowire, 0.0052 wt% graphene flake, and 0.01 wt% binder, based on the total weight of the solution. After forming a second release film on the Ag nanowire-graphene composite layer, the first release film was removed. Thereafter, the UV-patternable hard coat layer was transferred in a direction in which it contacted the separate PET substrate. After transferring to the substrate, the UV-patternable hard coating layer and the Ag nanowire-graphene composite layer were patterned by a photolithography process. The layer having a thickness of 2 탆 was coated with the prepared antioxidant solution and heated at 100 캜 for 10 minutes to cure the antioxidant layer to prepare a conductive substrate.

4-2. Example 2: Fabrication of conductive substrate

Except that 0.15 wt% of Ag nanowire, 0.01 wt% of graphene flake and 0.01 wt% of graphene powder were added to the total weight of the solution containing the Ag nanowire, graphene flake and binder in the same manner as in Example 1, wt%. < / RTI >

Comparative Example: Preparation of a conductive substrate not containing graphene flakes

As a comparative example, the UV-patternable hard-coating layer (UPHC) prepared in Examples 1-1 to 1-2 above was formed on the first release film, and the solution of the solution A solution containing 0.15 wt% of Ag nanowire and 0.01 wt% of binder with respect to the total weight was coated on the UPHC. After forming the second release film after the coating, the first release film; The UV-patternable hard coating layer; The metal nanowire layer; And the first release film was removed from the second release film. After removal, the UV-patternable hard coat layer was transferred in the direction of contact with the substrate. After the transfer to the substrate, the UV-patternable hard coating layer and the silver nanowire layer were patterned by a photolithography process. After coating, patterning was carried out by a photolithography process. An antioxidant solution was coated on the layer having a thickness of 2 탆, which had been patterned, and then heated at 100 캜 for 10 minutes to cure the antioxidant layer to prepare a conductive substrate.

5. Characteristic Analysis of Conductive Substrate

The transmittance, the haze, the surface resistance and the uniformity of the surface resistance were measured for the conductive substrates prepared in Examples 1 and 2 and Comparative Examples, respectively, and the results are shown in Table 1 below. The electroconductive substrate of Example 1 and Example 2 including the Ag nanowire and the graphene composite of the present invention improved the uniformity of surface resistance as compared with the electroconductive substrate of the comparative example not containing graphene and had improved haze and transmittance .

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

Claims (18)

Board;
A UV-patternable hard-coating film having a pattern formed on the substrate; And
The metal nanowire-graphene composite layer formed on the pattern of the UV-patternable hard-
And a conductive substrate.
The method according to claim 1,
Wherein the graphene comprises a graphene flake.
The method according to claim 1,
Wherein the metal nanowire-graphene composite layer further comprises a binder.
The method according to claim 1,
Wherein the metal nanowire comprises a metal selected from the group consisting of Ag, Au, Cu, and combinations thereof.
The method according to claim 1,
Wherein the metal nanowire-graphene composite layer has a thickness of 1 nm to 1 占 퐉.
The method according to claim 1,
And an antioxidant layer formed on the metal nanowire-graphene composite layer.
The method according to claim 1,
Wherein the substrate is a display panel.
A device comprising a conductive substrate according to any one of claims 1 to 7.
9. The method of claim 8,
Wherein the device is a display or a photovoltaic device.
10. The method of claim 9,
Wherein the display comprises a flat panel display, or a touch screen panel.
Forming a UV-patternable hard-coating layer on a first release film;
Forming a metal nanowire-graphene composite layer on the UV-patternable hard-coating layer;
Forming a second release film on the metal nanowire-graphene composite layer;
Removing the first release film and transferring the UV-patternable hard-coating layer, the metal nanowire-graphene composite layer, and the second release film to a substrate and removing the second release film;
Patterning the UV-patternable hard-coating layer and the metal nanowire-graphene composite layer by a photolithography process
And forming a conductive layer on the conductive substrate.
12. The method of claim 11,
Wherein the metal nanowire-graphene composite layer is formed by coating a solution containing metal nanowires and graphene flakes.
13. The method of claim 12,
Wherein the coating is performed by web coating, spin coating, dip coating, slot-die coating, double slit coating, insulating coating, zone casting, or spray coating.
13. The method of claim 12,
Wherein the solution comprising the metal nanowire and the graphene flake further comprises a binder.
12. The method of claim 11,
Wherein the thickness of the metal nanowire-graphene composite layer is 1 nm to 1 占 퐉.
12. The method of claim 11,
Further comprising forming an antioxidant layer after the patterning.
17. The method of claim 16,
Wherein the antioxidant layer is formed by coating a solution containing an antioxidant.
18. The method of claim 17,
Wherein the antioxidant comprises tetraethyl orthosilicate, polymethacrylate, urethane acrylate, trimethanepropane triacrylate, or butyl acrylate.

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