KR20180089844A - Laser annealing apparatus and method for crystallizing thin film using the same - Google Patents

Abstract

An embodiment of the present invention relates to a laser annealing apparatus and a method for crystallizing a thin film using the same. A first laser beam is emitted to a target thin film. The first laser beam reflected by the target thin film is reflected. A second laser beam is emitted to the target thin film. At this time, the second laser beam is overlapped with at least a part of an area to which the first laser beam is emitted. It is possible to maintain energy density effective for crystallization and increase the effective width of the laser beam.

Description

[0001] The present invention relates to a laser annealing apparatus and a thin film crystallization method using the same,

The present invention relates to a laser annealing apparatus and a thin film crystallization method using the same, and more particularly, to a laser annealing apparatus capable of maintaining an energy density effective for crystallization and increasing the effective width of a laser beam, Thin film crystallization method.

In general, a thin film transistor used in a semiconductor device or a display device is divided into an amorphous silicon thin film transistor and a polycrystalline silicon thin film transistor depending on the type of the semiconductor layer.

Polycrystalline silicon thin film transistors are widely used because they have larger charge mobility than amorphous silicon thin film transistors.

Although polycrystalline silicon can be deposited directly, it can be prepared by depositing amorphous silicon and then crystallizing it.

As a method of directly depositing the polycrystalline silicon, a chemical vapor deposition (CVD) method may be used. As a method of crystallizing the amorphous silicon after the deposition, a method of excimer laser annealing (ELA) which irradiates an excimer laser, which is a high-power pulse laser, instantaneously, a solid phase crystallization (SPC A metal induced crystallization (MIC) method and a sequential lateral solidification (SLS) method in which an electric field is applied after selectively depositing a metal may be used.

Among them, the excimer laser heat treatment method using a high-output pulse laser of short wavelength is widely used because it can be processed at a relatively low temperature, has a high crystallization speed, and is excellent in crystallinity.

An object of an embodiment of the present invention is to provide a laser heat processing apparatus capable of realizing an effect of maintaining an energy density effective for crystallization and increasing the effective width of a laser beam.

Another object of the present invention is to provide a thin film crystallization method capable of improving the crystallization quality to a certain level or more while maintaining productivity.

According to an aspect of the present invention, there is provided a laser annealing apparatus including a stage supporting a substrate on which a target thin film is formed and moving at a constant speed; A laser irradiation unit for irradiating the first thin film with the first laser beam while the stage moves; And a reflection mirror for reflecting the first laser beam reflected by the target thin film and irradiating the second thin film with the second laser beam, wherein the reflection mirror reflects the second thin film of the second thin film, The angle of reflection can be adjusted so that the first laser beam overlaps at least a part of the irradiated area.

Wherein the area irradiated with the first laser beam of the thin film includes a first area at the center and a second area disposed at both sides of the first area, May overlap the second laser beam.

The energy of the first laser beam corresponding to the second region may be smaller than the energy of the first laser beam corresponding to the first region.

The second region overlapping with the second laser beam may be positioned in front of the first region with respect to a direction in which the stage moves.

20% to 100% of the second area may overlap the second laser beam.

The first laser beam may be an excimer laser beam, and may be irradiated in a pulse shape or a line shape.

The reflective mirror may be formed of any one of a flat mirror and a concave mirror.

According to another aspect of the present invention, there is provided a thin film crystallization method including: mounting a substrate having a thin film on a stage; Moving the stage at a constant speed; Irradiating the target thin film with a first laser beam; And a step of reflecting the first laser beam reflected by the thin film to be processed so that the second thin film is irradiated with the second laser beam, wherein the second laser beam is reflected by the first laser beam May be irradiated to overlap at least a part of the irradiated area.

The target thin film may include amorphous silicon.

The first laser beam may be an excimer laser beam, and may be irradiated in a pulse shape or a line shape.

The first laser beam may be irradiated at an angle of less than 90 degrees with respect to the surface of the stage.

Wherein the area of the film to be treated irradiated with the first laser beam includes a first area at the center and a second area disposed at both sides of the first area, Can be superimposed on the laser beam.

The energy of the first laser beam corresponding to the second region may be smaller than the energy of the first laser beam corresponding to the first region.

The second region overlapping with the second laser beam may be positioned in front of the first region with respect to a direction in which the stage moves.

20% to 100% of the second area may overlap the second laser beam.

The embodiment of the present invention irradiates the first laser beam with the film to be treated, reflects the first laser beam reflected from the film to be processed, and irradiates the second laser beam with the film to be processed. At this time, the second laser beam is overlapped with at least a part of the area irradiated with the first laser beam.

By realizing the effect of increasing the effective width of the laser beam effective for crystallization, the crystallization quality can be improved to a certain level or more. In addition, the crystallization quality can be improved and the productivity can be maintained without adding facilities.

FIG. 1 is a block diagram for explaining a laser annealing apparatus according to an embodiment of the present invention.
2A is a diagram showing a profile of a first laser beam.
2B is a view showing the profile of the second laser beam.
3A is a perspective view showing a state in which a first laser beam is irradiated onto a target thin film.
3B is a perspective view showing a state in which the second laser beam is irradiated onto the target thin film.
4 is a plan view showing a region irradiated with the first laser beam and the second laser beam in the target thin film.
5A and 5B are partial enlarged views of FIG.
6A and 6B are views showing the profiles of the first and second laser beams.
7A and 7B are views showing profiles of first and second laser beams for explaining a comparative example of the present invention.
8 and 10 are views showing profiles of first and second laser beams for explaining an embodiment of the present invention.
9A and 9B are views showing profiles of first and second laser beams for explaining a comparative example of the present invention.
11A and 11B are views showing profiles of first and second laser beams for explaining a comparative example of the present invention.
12 is a diagram illustrating a laser annealing apparatus according to another embodiment of the present invention.
13 is a flowchart for explaining a thin film crystallization method according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It is to be understood that the following embodiments are provided so that those skilled in the art can understand the present invention without departing from the scope and spirit of the present invention. no.

FIG. 1 is a block diagram for explaining a laser annealing apparatus according to an embodiment of the present invention.

1, a laser annealing apparatus includes a stage 10 supporting a substrate 100 on which a target thin film 110 is formed and moving at a constant speed, a target thin film 110 in a state in which the stage 10 is moved, The laser irradiation unit 20 for irradiating the first laser beam L1 with the first laser beam L1 and the first laser beam L1 'reflected by the target thin film 110 to reflect the second laser beam L2 May be irradiated onto the surface of the substrate.

The stage 10 may be configured in the form of a plate in which the substrate 100 can be supported and fixed. The stage 10 can be configured to move in one direction or both directions by means of transport means (not shown).

The laser irradiation unit 20 may be disposed on the stage 10, for example, and may be configured to generate and output an excimer laser beam. The excimer laser beam can be output in the form of a pulse having a frequency of several hundreds of hertz (Hz) and an energy of several watts to several hundred watts.

The first laser beam L1 may be directly irradiated onto the target thin film 110 of the stage 10 or may be irradiated onto a predetermined optical system 30, and can be irradiated to the target thin film 110 of the stage 10 through a reflection mirror, a lens, or the like.

The reflection mirror 40 may be configured to reflect the first laser beam L1 'reflected by the target thin film 110 and to irradiate the second thin film 110 with the second laser beam L2.

The reflection mirror 40 may be composed of a plane mirror or a concave mirror and the reflection angle may be adjusted so that the second laser beam L2 can overlap with at least a part of the region irradiated with the first laser beam L1 . For example, driving means (not shown) configured to move the reflection mirror 40 in the x-, y-, and z-axis directions may be further provided.

FIG. 2A schematically shows a profile of the first laser beam L1, and FIG. 2B schematically shows a profile of the second laser beam L2. In the figure, the horizontal axis shows the width of the laser beam and the vertical axis shows the energy of the laser beam.

Generally, the cross-sectional profile of the laser beam may have a symmetrical shape on both sides with respect to the central axis of the direction in which the laser beam is irradiated. A first region disposed symmetrically with respect to the central axis with respect to the center axis and having a relatively constant energy and a second region disposed on both sides of the first region and gradually decreasing in energy toward the peripheral region.

2A, the first laser beam L1 is symmetrical with respect to the central axis. For example, the first laser beam L1 has two first regions a having a first energy E1 and a second region a having a first energy E1. And two second regions (b) disposed on both sides and gradually decreasing in energy toward the peripheral portion. The second regions (b) are disposed symmetrically with respect to the central axis and may have a width smaller than the first region (a).

Referring to FIG. 2B, the second laser beam L1 is symmetrical with respect to the central axis, for example, two first regions a having a second energy E2 smaller than the first energy E1, , And two second regions (b) disposed on both sides of the first region (a) and whose energy gradually decreases toward the peripheral portion. The second regions (b) are disposed symmetrically with respect to the central axis and may have a width smaller than the first region (a).

The width 2a + 2b of the second laser beam L2 may be the same as the width 2a + 2b of the first laser beam L1, but the second energy E2 of the second laser beam L2 may be Can be reduced compared to the first energy E1 of the first laser beam L1 due to the reflectance of the film 110 to be processed.

3A is a perspective view showing a state in which the first laser beam L1 is irradiated onto the target thin film 110 and FIG 3B is a view showing a state in which the second laser beam L2 is irradiated onto the target thin film 110 It is a perspective.

Referring to FIGS. 1 and 3A, the first laser beam L1 may be irradiated to the target thin film 110 while the stage 10 is moving at a constant speed.

The first laser beam L1 is preferably irradiated at an angle of less than 90 degrees with respect to the surface of the stage 10, and may be irradiated in a line form having a constant width and length, for example.

Although FIG. 3A illustrates the case where the first laser beam L1 is focused, the present invention is not limited thereto. The first laser beam L1 may be irradiated with the first laser beam L1 by using an optical system Shape or parallel shape.

The width and length of the first laser beam L1 can be adjusted according to the performance of the laser irradiator 20 but the size (width or length) of the first laser beam L1 can be limited have.

Referring to FIGS. 1 and 3B, the second laser beam L2 may be irradiated onto the target thin film 110 while the stage 10 is moving at a constant speed.

The second laser beam L2 may be irradiated in the form of a line having a width and a length corresponding to, for example, the first laser beam L1.

The angle of the second laser beam L2 can be adjusted by the reflection angle of the reflection mirror 40. [ The reflection angle of the reflection mirror 40 may be controlled to irradiate the second laser beam L2 so that the first laser beam L1 of the target thin film 110 overlaps at least a part of the region irradiated with the first laser beam L1.

4 is a plan view showing a region irradiated with the first laser beam L1 and the second laser beam L2 in the target thin film 110, respectively.

1 and 4, a second laser beam L2 is irradiated so that the first laser beam L1 is superimposed on at least a part of the irradiated region 112, so that the first thin film 110 is irradiated with the first laser beam L2, The overlapped region 116 of the region 112 irradiated with the laser beam L1 and the region 114 irradiated with the second laser beam L2 can be formed.

Since the first laser beam L1 and the second laser beam L2 are successively irradiated onto the target thin film 110 while the stage 10 moves at a constant speed, May be located in front of the region 112 with respect to the direction in which the region 112 moves. That is, the region 114 irradiated with the second laser beam L2, the overlapped region 116, and the first laser beam L1 from the front surface of the stage 10 are moved with respect to the moving direction of the stage 10 The irradiated regions 112 may be arranged sequentially.

Since the first laser beam L1 and the second laser beam L2 are successively irradiated onto the target thin film 110 while the stage 10 is moving at a constant speed, 110 may be heat treated.

4 shows a case where the superimposed region 116 is located on the front surface of the region 112 with respect to the direction in which the stage 10 is moved. However, in another embodiment, the reflective mirror 40 The overlapping region 116 can be positioned on the rear surface of the region 112. [0064] FIG.

Figs. 5A and 5B are enlarged plan views of a part of the regions 112 and 114 shown in Fig. 4, and Figs. 6A and 6B are views showing the profiles of the first and second laser beams L1 and L2 to be. 6A and 6B, the horizontal axis shows the width of the laser beam, and the vertical axis shows the energy of the laser beam.

5A shows a case where the area 112 irradiated with the first laser beam L1 and the area 114 irradiated with the second laser beam L2 are not overlapped with each other as a comparative example. 5B shows an embodiment of the present invention in which a region 112 in which the first laser beam L1 is irradiated and a region 116 in which the region 114 irradiated with the second laser beam L2 are partially overlapped with each other FIG.

The region 112 includes a first region 112a corresponding to the first region a of the first laser beam L1 and a second region 112b corresponding to the second region b of the first laser beam L1. Region 112b. The region 114 corresponds to a first region 114a corresponding to the first region a of the second laser beam L2 and a second region 114b corresponding to the second region b of the second laser beam L2, And a second region 114b.

5A and 6A, a first laser beam L1 having a first energy E1 and a second laser beam L2 having a second energy E2 less than the first energy E1 The first region 112a of the central portion corresponding to the first region a of the first laser beam L1 is sufficiently heat-treated by the first energy E1 The second region 112b of the peripheral portion corresponding to the second region b of the first laser beam L1 may be insufficiently heat-treated by a relatively small amount of energy.

5B and 6B, a region 112 irradiated with a first laser beam L1 having a first energy E1 and a second energy E2 having a second energy E2 smaller than the first energy E1 When the region 114 irradiated with the laser beam L2 is partially overlapped, the energy of the first laser beam L1 (see FIG. 6B) is increased by the energy increase by the two heat treatment in the overlapped region 116 The degree of heat treatment of the second region 112b of the peripheral portion corresponding to the second region b of the second region 112b can be improved. The bold lines in FIG. 6 (b) show the energy distributions throughout the regions 112, 114, and 116.

According to the embodiment of the present invention, the second laser beam L2 may be irradiated so that the first laser beam L1 overlaps at least a part of the irradiated region 112, Is overlapped with 20% to 100% of the second region 112b of the irradiated region 112. [

For example, the degree of overlapping can be adjusted by adjusting the reflection angle of the reflection mirror 40 by driving means (not shown) connected to the reflection mirror 40.

Referring to FIGS. 5B and 6B, in this case, the distance from the central axis of the first laser beam L1 to the central axis of the second laser beam L2 may be about 2a + b to 2a + 1.8b. That is, since the effective width of the laser beam is increased compared to the crystallization process using only the first laser beam L1, the effective crystallization area can be increased.

If the second laser beam L2 overlaps an area smaller than 20% of the second area 112b of the irradiated area 112 of the first laser beam L1, as shown in FIG. 7A, Since the energy of the laser beams E1 and E2 corresponding to the overlapping region 116 is smaller than the energy effective for crystallization, crystallization may be insufficient. When the second laser beam L2 is superimposed to an area wider than 100% of the second area 112b of the area 112 irradiated with the first laser beam L1, that is, when the second laser beam L2 Is overlapped with the second region 112b and a part of the first region 112a of the irradiated region 112, as shown in Fig. 7B, the overlapping region 116 (For example, the first energy E1) of the laser beams L1 and L2 corresponding to the laser beams L1 and L2 is excessively crystallized.

In the above embodiment, the widths a and b of the first laser beam L1 and the second laser beam L2 are equal to each other. However, if the mechanical or optical conditions are adjusted, The width of the beam L2 can be reduced or increased than the width of the first laser beam L1. For example, the distance between the stage 10 and the reflection mirror 40 may be adjusted, an optical system (not shown) may be added between the stage 10 and the reflection mirror 40, or the curvature of the reflection mirror 40 So that the width of the second laser beam L2 can be adjusted.

First, the case where the width of the second laser beam L2 is smaller than the width of the first laser beam L1 will be described with reference to FIG.

8, the first laser beam L1 is symmetrical with respect to the central axis. For example, the first laser beam L1 has two first regions a having a first energy E1 and a second region a having a first energy E1. And two second regions (b) disposed on both sides and gradually decreasing in energy toward the peripheral portion.

Further, the second laser beam L1 is symmetrical with respect to the central axis, for example, two first regions c having a second energy E2 smaller than the first energy E1, and two second regions d disposed on both sides of the first region c and gradually decreasing in energy toward the peripheral portion. The widths of the first and second regions c and d of the second laser beam L1 are smaller than the widths of the first and second regions a and b of the first laser beam L1.

In this case, the distance from the central axis of the first laser beam L1 to the central axis of the second laser beam L2 may be about a + b + c to a + 0.8b + c + d. That is, since the effective width of the laser beam is increased compared to the crystallization process using only the first laser beam L1, the effective crystallization area can be increased.

If the second laser beam L2 overlaps an area smaller than 20% of the second area 112b of the irradiated area 112 of the first laser beam L1, as shown in FIG. 9A, Since the energy of the laser beams L1 and L2 corresponding to the overlapping region 116 is smaller than the energy effective for crystallization, crystallization may be insufficient. Further, when the second laser beam L2 is superimposed to an area wider than 100% of the second area 112b of the area 112 irradiated with the first laser beam L1, as shown in Fig. 9B, Excessive crystallization can be achieved because the energy of the laser beams L1 and L2 corresponding to the overlapping region 116 exceeds the energy effective for crystallization, for example, the first energy E1.

Next, a case in which the width of the second laser beam L2 is greater than the width of the first laser beam L1 will be described with reference to FIG.

10, the first laser beam L1 is symmetrical with respect to the central axis. For example, the first laser beam L1 has two first regions a having a first energy E1 and a second region a having a first energy E1. And two second regions (b) disposed on both sides and gradually decreasing in energy toward the peripheral portion.

Further, the second laser beam L1 is symmetrical with respect to the central axis, for example, two first regions c having a second energy E2 smaller than the first energy E1, and two second regions d disposed on both sides of the first region c and gradually decreasing in energy toward the peripheral portion. The widths of the first and second regions c and d of the second laser beam L1 are larger than the widths of the first and second regions a and b of the first laser beam L1.

In this case, the distance from the central axis of the first laser beam L1 to the central axis of the second laser beam L2 may be about a + c + d to a + b + c + 0.8d. That is, since the effective width of the laser beam is increased compared to the crystallization process using only the first laser beam L1, the effective crystallization area can be increased.

If the second laser beam L2 overlaps an area smaller than 20% of the second area 112b of the irradiated area 112 of the first laser beam L1, as shown in FIG. 11A, Since the energy of the laser beams L1 and L2 corresponding to the overlapping region 116 is smaller than the energy effective for crystallization, crystallization may be insufficient. When the second laser beam L2 is superimposed to an area wider than 100% of the second area 112b of the area 112 irradiated with the first laser beam L1, as shown in FIG. 11B, Excessive crystallization can be achieved because the energy of the laser beams L1 and L2 corresponding to the overlapping region 116 exceeds the energy effective for crystallization, for example, the first energy E1.

12 is a diagram illustrating a laser annealing apparatus according to another embodiment of the present invention.

Referring to FIG. 12, the laser annealing apparatus shown in FIG. 1 may be disposed inside a chamber 50 where a certain atmospheric condition such as a vacuum can be maintained.

The laser irradiation unit 20 may be disposed inside the chamber 50 or outside the chamber 50. When the laser irradiation unit 20 is disposed outside the chamber 50, maintenance and management of the laser irradiation unit 20 having a relatively complicated structure can be facilitated. In this case, a transmission window 52 may be formed on the side wall of the chamber 50 so that the laser L1 can be supplied to the inside of the chamber 50 while maintaining energy and straightness.

Hereinafter, embodiments of the present invention will be described in detail with reference to a thin film crystallization method using a laser annealing apparatus according to an embodiment of the present invention.

FIG. 13 is a flowchart for explaining a thin film crystallization method according to an embodiment of the present invention, which will be described with reference to FIG.

First, the substrate 100 on which the target thin film 110 is formed is mounted on the stage 10 (step S1).

The processed thin film 110 may be a semiconductor thin film, for example, an amorphous silicon thin film. The target thin film 110 may be deposited to a predetermined thickness over the entire surface of the substrate 100.

The stage 10 is moved in one direction, for example, in a horizontal direction at a constant speed (step S2). Then, the first laser beam L1 is irradiated onto the target thin film 110 in a state in which the stage 10 is moved (step S3).

The first laser beam L1 outputted from the laser irradiator 20 can be irradiated onto the target thin film 110 of the stage 10 by changing its path by the optical system 30 or the like. The first laser beam L1 is preferably irradiated at an angle of less than 90 degrees with respect to the surface of the stage 10, for example, from about 35 degrees to about 65 degrees, and can be irradiated in a line form having a constant width and length have. The first laser beam Ll can be irradiated, for example, as an excimer laser beam in the form of a pulse having a frequency of several hundreds of hertz (Hz) and an energy of several watts to several hundred watts.

Referring to FIG. 4, the amorphous silicon may be crystallized into a polycrystalline silicon in one region 112 of the thin film 110 by irradiating the first laser beam L1. At this time, the amorphous silicon is melted by heat and converted into liquid silicon (Si), and then solidified and crystallized.

The first laser beam L1 reflected by the target thin film 110 is reflected and the second laser beam L2 is irradiated onto the target thin film 110 (step S4).

The liquid silicon (Si) has a relatively high surface reflectance of about 60% to 70%. Whereby the first laser beam L1 can be reflected from the surface of the target thin film 110. [

The first laser beam L 1 'reflected by the surface of the target thin film 110 may be reflected at a predetermined angle with respect to the surface of the stage 10 and may be incident on the reflection mirror 40. The second laser beam L2 reflected by the reflection mirror 40 may be irradiated onto the target thin film 110 again.

A portion of the region 114 irradiated with the second laser beam L2 is irradiated with the second laser beam L2 so as to overlap with at least a portion of the region 112 irradiated with the first laser beam L1, 1 laser beam L1 may overlap at least part of the irradiated area 112. [

5A and 6A, if the region 112 irradiated with the first laser beam L1 having the first energy E1 and the second energy E2 smaller than the first energy E1 The second region 112b of the peripheral portion 112b may be insufficient in crystallinity due to a relatively small energy. For example, since the crystal grain size is small and the uniformity is low, the field effect mobility may be low, the characteristics of the devices may be different from each other, and the lattice defects may be large, thereby causing a leakage current.

However, as described with reference to FIGS. 5B and 6B, according to the embodiment of the present invention, the degree of crystallization of the second region 112b can be improved by increasing the energy by two heat treatments in the overlapped region 116 . For example, the size and uniformity of crystal grains can be increased and lattice defects can be reduced.

Since the second energy E2 of the second laser beam L2 is smaller than the first energy E1 of the first laser beam L1, the degree of crystallization of the region 114 irradiated with the second laser beam L2 is The first laser beam L1 is irradiated in a state where the target thin film 110 moves in one direction due to the movement of the stage 10 while the first laser beam L1 is lower than the irradiated region 112, (Hz). Therefore, the entire region of the target thin film 110 can be almost uniformly crystallized through the above process.

The laser heat treatment apparatus has a limitation in increasing the width and the length of the laser beam L1 according to the performance of the laser irradiation unit 20. [ That is, the size of the laser beam L1 may be limited in order to obtain an energy density effective for crystallization.

Increasing the width of the laser beam within a range that can maintain the energy density required for crystallization can reduce the length, and increasing the length can reduce the width. In order to increase the width of the laser beam while maintaining the energy density required for the crystallization, another laser beam must be added so as to be adjacent to the laser beam.

However, according to the embodiment of the present invention, the area 112 irradiated with the first laser beam L1 and the area 114 irradiated with the second laser beam L2 are partially overlapped using the reflected laser beam The effect of increasing the effective width of the laser beam effective for crystallization can be realized. When the effective width of the laser beam is increased, the laser beam is superimposed on the entirety of the target thin film 110 in the crystallization process, so that the crystallization quality can be improved and the productivity can be improved. Therefore, the embodiment of the present invention improves the crystallization quality to a certain level or higher and maintains the productivity without adding facilities.

As described above, the optimal embodiment of the present invention has been disclosed through the detailed description and the drawings. It is to be understood that the terminology used herein is for the purpose of describing the present invention only and is not used to limit the scope of the present invention described in the claims or the claims. Therefore, those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: stage
20: laser irradiation unit
30: Optical system
40: reflection mirror
50: chamber
52: Transmission window
100: substrate
110: Film to be processed
112, 114, and 116: a region irradiated with a laser beam

Claims (19)

A stage supporting the substrate on which the processed thin film is formed and moving at a constant speed;
A laser irradiation unit for irradiating the first thin film with the first laser beam while the stage moves; And
And a reflection mirror for reflecting the first laser beam reflected by the target thin film to irradiate the second laser beam onto the target thin film,
Wherein the reflection mirror adjusts the reflection angle so that the second laser beam overlaps at least a part of the region of the target thin film to which the first laser beam is irradiated.
The laser processing apparatus according to claim 1, wherein the region of the film to be treated which is irradiated with the first laser beam includes a first region at a central portion and a second region disposed at both sides of the first region, Wherein the reflection angle is adjusted such that at least a part of the second region overlaps with the second laser beam.
3. The laser annealing apparatus according to claim 2, wherein the energy of the first laser beam corresponding to the second region is smaller than the energy of the first laser beam corresponding to the first region.
3. The laser annealing apparatus according to claim 2, wherein the second region overlapped with the second laser beam is located over the entire surface of the first region with respect to a direction in which the stage moves.
3. The laser annealing apparatus according to claim 2, wherein 20% to 100% of the second region overlaps with the second laser beam.
2. The laser annealing apparatus according to claim 1, wherein the first laser beam is an excimer laser beam.
7. The laser annealing apparatus according to claim 6, wherein the first laser beam is irradiated in a pulse form.
The laser annealing apparatus according to claim 1, wherein the first laser beam is irradiated in a linear form.
2. The laser annealing apparatus according to claim 1, wherein the reflective mirror comprises one of a flat mirror and a concave mirror.
Mounting a substrate having a processed thin film on a stage;
Moving the stage at a constant speed;
Irradiating the target thin film with a first laser beam; And
And reflecting the first laser beam reflected by the thin film to be processed so that the second thin film is irradiated with the second laser beam,
Wherein the second laser beam is irradiated so that the second laser beam overlaps at least a part of the region irradiated with the first laser beam of the film to be processed.
The thin film crystallization method according to claim 10, wherein the processed thin film comprises amorphous silicon.
The thin film crystallization method according to claim 10, wherein the first laser beam is an excimer laser beam.
The thin film crystallization method according to claim 12, wherein the first laser beam is irradiated in a pulse form.
The thin film crystallization method according to claim 10, wherein the first laser beam is irradiated in a linear form.
The thin film crystallization method according to claim 10, wherein the first laser beam is irradiated at an angle of less than 90 degrees with respect to the surface of the stage.
The laser processing apparatus according to claim 10, wherein the region of the film to be treated irradiated with the first laser beam includes a first region at a central portion and a second region disposed at both sides of the first region, At least a part of which overlaps with the second laser beam.
The thin film crystallization method according to claim 16, wherein the energy of the first laser beam corresponding to the second region is smaller than the energy of the first laser beam corresponding to the first region.
The thin film crystallization method according to claim 16, wherein the second region overlapping with the second laser beam is positioned over the entire surface of the first region with respect to a direction in which the stage moves.
The thin film crystallization method according to claim 16, wherein 20% to 100% of the second region overlaps with the second laser beam.

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