KR20180084518A - 메모리 장치, 이를 포함하는 메모리 시스템, 및 그의 리페어 동작 방법 - Google Patents

메모리 장치, 이를 포함하는 메모리 시스템, 및 그의 리페어 동작 방법 Download PDF

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Publication number
KR20180084518A
KR20180084518A KR1020170008231A KR20170008231A KR20180084518A KR 20180084518 A KR20180084518 A KR 20180084518A KR 1020170008231 A KR1020170008231 A KR 1020170008231A KR 20170008231 A KR20170008231 A KR 20170008231A KR 20180084518 A KR20180084518 A KR 20180084518A
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KR
South Korea
Prior art keywords
memory
memory devices
devices
repair operation
extra
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KR1020170008231A
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English (en)
Inventor
김준우
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에스케이하이닉스 주식회사
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Priority to KR1020170008231A priority Critical patent/KR20180084518A/ko
Priority to US15/715,248 priority patent/US10176066B2/en
Publication of KR20180084518A publication Critical patent/KR20180084518A/ko
Priority to US16/222,624 priority patent/US10437692B2/en
Priority to US16/593,700 priority patent/US11036601B2/en
Priority to US17/220,175 priority patent/US11556440B2/en

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1446—Point-in-time backing up or restoration of persistent data
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
    • G06F11/2053—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements where persistent mass storage functionality or persistent mass storage control functionality is redundant
    • G06F11/2094—Redundant storage or storage space
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/0292—User address space allocation, e.g. contiguous or non contiguous base addressing using tables or multilevel address translation means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/10—Address translation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/805—Real-time
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/82—Solving problems relating to consistency
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring

Abstract

본 기술은 복수의 메모리 장치들을 포함하는 메모리 모듈 및 메모리 장치의 리페어 동작방법에 관한 것으로서, 여분의 메모리 영역을 갖는 제1 메모리 장치들을 포함하는 제1 메모리 모듈, 여분의 메모리 영역을 갖는 제2 메모리 장치들을 포함하는 제2 메모리 모듈, 및 제1 메모리 모듈에 대응하여, 호스트로부터 요청된 데이터를 제1 메모리 장치들에 라이트/리드하는 제어 로직을 포함하고, 상기 제어 로직은 상기 제1 메모리 장치들 중 에러가 발생한 메모리 장치에 해당하는 데이터를 상기 제2 메모리 장치들의 여분의 메모리 영역들에 라이트/리드하는 메모리 모듈을 제공한다.
KR1020170008231A 2017-01-17 2017-01-17 메모리 장치, 이를 포함하는 메모리 시스템, 및 그의 리페어 동작 방법 KR20180084518A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020170008231A KR20180084518A (ko) 2017-01-17 2017-01-17 메모리 장치, 이를 포함하는 메모리 시스템, 및 그의 리페어 동작 방법
US15/715,248 US10176066B2 (en) 2017-01-17 2017-09-26 Memory module, memory system including the same and operation method thereof
US16/222,624 US10437692B2 (en) 2017-01-17 2018-12-17 Memory module, memory system including the same and operation method thereof
US16/593,700 US11036601B2 (en) 2017-01-17 2019-10-04 Memory module, memory system including the same and operation method thereof
US17/220,175 US11556440B2 (en) 2017-01-17 2021-04-01 Memory module, memory system including the same and operation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170008231A KR20180084518A (ko) 2017-01-17 2017-01-17 메모리 장치, 이를 포함하는 메모리 시스템, 및 그의 리페어 동작 방법

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KR20180084518A true KR20180084518A (ko) 2018-07-25

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US (4) US10176066B2 (ko)
KR (1) KR20180084518A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180084518A (ko) * 2017-01-17 2018-07-25 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템, 및 그의 리페어 동작 방법
KR20210145480A (ko) * 2020-05-25 2021-12-02 삼성전자주식회사 디스플레이 구동 장치 및 디스플레이 구동 장치를 포함하는 디스플레이 장치

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KR20180127710A (ko) * 2017-05-22 2018-11-30 에스케이하이닉스 주식회사 메모리 모듈 및 이를 포함하는 메모리 시스템
KR20210014473A (ko) * 2019-07-30 2021-02-09 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 라이트 방법

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Publication number Publication date
US20180203775A1 (en) 2018-07-19
US10437692B2 (en) 2019-10-08
US11036601B2 (en) 2021-06-15
US11556440B2 (en) 2023-01-17
US10176066B2 (en) 2019-01-08
US20190121711A1 (en) 2019-04-25
US20200034259A1 (en) 2020-01-30
US20210216419A1 (en) 2021-07-15

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