KR20180073190A - Flexible electrode composite comprising ionic liquid and electronic device comprising the same - Google Patents
Flexible electrode composite comprising ionic liquid and electronic device comprising the same Download PDFInfo
- Publication number
- KR20180073190A KR20180073190A KR1020160176776A KR20160176776A KR20180073190A KR 20180073190 A KR20180073190 A KR 20180073190A KR 1020160176776 A KR1020160176776 A KR 1020160176776A KR 20160176776 A KR20160176776 A KR 20160176776A KR 20180073190 A KR20180073190 A KR 20180073190A
- Authority
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- South Korea
- Prior art keywords
- flexible
- group
- metal
- composite material
- ionic liquid
- Prior art date
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- 239000002608 ionic liquid Substances 0.000 title claims abstract description 35
- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 29
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 22
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 22
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 22
- 239000002070 nanowire Substances 0.000 claims abstract description 21
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 18
- 239000005300 metallic glass Substances 0.000 claims abstract description 15
- -1 polypyridine Polymers 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 5
- 229920000767 polyaniline Polymers 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- 229920000128 polypyrrole Polymers 0.000 claims description 5
- 229920000123 polythiophene Polymers 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 4
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims description 4
- 229920001197 polyacetylene Polymers 0.000 claims description 4
- 229920000323 polyazulene Polymers 0.000 claims description 4
- 229920000414 polyfuran Polymers 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 239000007787 solid Substances 0.000 abstract description 10
- 239000007788 liquid Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 4
- 239000002086 nanomaterial Substances 0.000 abstract description 4
- 150000003839 salts Chemical class 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 229910021389 graphene Inorganic materials 0.000 description 4
- REACWASHYHDPSQ-UHFFFAOYSA-N 1-butylpyridin-1-ium Chemical class CCCC[N+]1=CC=CC=C1 REACWASHYHDPSQ-UHFFFAOYSA-N 0.000 description 3
- AMKUSFIBHAUBIJ-UHFFFAOYSA-N 1-hexylpyridin-1-ium Chemical class CCCCCC[N+]1=CC=CC=C1 AMKUSFIBHAUBIJ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000007792 addition Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 description 2
- IQQRAVYLUAZUGX-UHFFFAOYSA-N 1-butyl-3-methylimidazolium Chemical compound CCCCN1C=C[N+](C)=C1 IQQRAVYLUAZUGX-UHFFFAOYSA-N 0.000 description 2
- OIDIRWZVUWCCCO-UHFFFAOYSA-N 1-ethylpyridin-1-ium Chemical class CC[N+]1=CC=CC=C1 OIDIRWZVUWCCCO-UHFFFAOYSA-N 0.000 description 2
- STCBHSHARMAIOM-UHFFFAOYSA-N 1-methyl-1h-imidazol-1-ium;chloride Chemical compound Cl.CN1C=CN=C1 STCBHSHARMAIOM-UHFFFAOYSA-N 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZGLLUEAYLAHJKB-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethyl)methanamine Chemical compound FC(F)(F)NC(F)(F)F ZGLLUEAYLAHJKB-UHFFFAOYSA-N 0.000 description 1
- KVBQNFMTEUEOCD-UHFFFAOYSA-M 1-butylpyridin-1-ium;bromide Chemical compound [Br-].CCCC[N+]1=CC=CC=C1 KVBQNFMTEUEOCD-UHFFFAOYSA-M 0.000 description 1
- POKOASTYJWUQJG-UHFFFAOYSA-M 1-butylpyridin-1-ium;chloride Chemical compound [Cl-].CCCC[N+]1=CC=CC=C1 POKOASTYJWUQJG-UHFFFAOYSA-M 0.000 description 1
- HTZVLLVRJHAJJF-UHFFFAOYSA-M 1-decyl-3-methylimidazolium chloride Chemical compound [Cl-].CCCCCCCCCCN1C=C[N+](C)=C1 HTZVLLVRJHAJJF-UHFFFAOYSA-M 0.000 description 1
- GITMVCYKHULLDM-UHFFFAOYSA-M 1-ethyl-2,3-dimethylimidazol-3-ium;bromide Chemical compound [Br-].CCN1C=C[N+](C)=C1C GITMVCYKHULLDM-UHFFFAOYSA-M 0.000 description 1
- NUJYCYLTUXYHQU-UHFFFAOYSA-M 1-ethyl-2,3-dimethylimidazol-3-ium;chloride Chemical compound [Cl-].CCN1C=C[N+](C)=C1C NUJYCYLTUXYHQU-UHFFFAOYSA-M 0.000 description 1
- GWQYPLXGJIXMMV-UHFFFAOYSA-M 1-ethyl-3-methylimidazol-3-ium;bromide Chemical compound [Br-].CCN1C=C[N+](C)=C1 GWQYPLXGJIXMMV-UHFFFAOYSA-M 0.000 description 1
- BMQZYMYBQZGEEY-UHFFFAOYSA-M 1-ethyl-3-methylimidazolium chloride Chemical compound [Cl-].CCN1C=C[N+](C)=C1 BMQZYMYBQZGEEY-UHFFFAOYSA-M 0.000 description 1
- ABFDKXBSQCTIKH-UHFFFAOYSA-M 1-ethylpyridin-1-ium;bromide Chemical compound [Br-].CC[N+]1=CC=CC=C1 ABFDKXBSQCTIKH-UHFFFAOYSA-M 0.000 description 1
- AMFMJCAPWCXUEI-UHFFFAOYSA-M 1-ethylpyridin-1-ium;chloride Chemical compound [Cl-].CC[N+]1=CC=CC=C1 AMFMJCAPWCXUEI-UHFFFAOYSA-M 0.000 description 1
- SWWLEHMBKPSRSI-UHFFFAOYSA-N 1-hexyl-2,3-dimethylimidazol-3-ium Chemical compound CCCCCCN1C=C[N+](C)=C1C SWWLEHMBKPSRSI-UHFFFAOYSA-N 0.000 description 1
- NCTQEXWJEPRHLV-UHFFFAOYSA-M 1-hexyl-2,3-dimethylimidazol-3-ium;chloride Chemical compound [Cl-].CCCCCCN1C=C[N+](C)=C1C NCTQEXWJEPRHLV-UHFFFAOYSA-M 0.000 description 1
- BGSUDDILQRFOKZ-UHFFFAOYSA-M 1-hexyl-3-methylimidazol-3-ium;bromide Chemical compound [Br-].CCCCCCN1C=C[N+](C)=C1 BGSUDDILQRFOKZ-UHFFFAOYSA-M 0.000 description 1
- RABFGPMWVQNDHI-UHFFFAOYSA-M 1-hexyl-3-methylimidazol-3-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CCCCCC[N+]=1C=CN(C)C=1 RABFGPMWVQNDHI-UHFFFAOYSA-M 0.000 description 1
- SZRSEFNUSHACPD-UHFFFAOYSA-M 1-hexylpyridin-1-ium;bromide Chemical compound [Br-].CCCCCC[N+]1=CC=CC=C1 SZRSEFNUSHACPD-UHFFFAOYSA-M 0.000 description 1
- JEOSMYVMLZTQOH-UHFFFAOYSA-M 1-hexylpyridin-1-ium;chloride Chemical compound [Cl-].CCCCCC[N+]1=CC=CC=C1 JEOSMYVMLZTQOH-UHFFFAOYSA-M 0.000 description 1
- LCXGSWXECDJESI-UHFFFAOYSA-M 1-methyl-3-octadecylimidazol-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCCN1C=C[N+](C)=C1 LCXGSWXECDJESI-UHFFFAOYSA-M 0.000 description 1
- SDXDXENAFAXVMX-UHFFFAOYSA-M 1-methyl-3-tetradecylimidazol-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCN1C=C[N+](C)=C1 SDXDXENAFAXVMX-UHFFFAOYSA-M 0.000 description 1
- VWUCIBOKNZGWLX-UHFFFAOYSA-N 1h-imidazol-1-ium;bromide Chemical compound [Br-].C1=C[NH+]=CN1 VWUCIBOKNZGWLX-UHFFFAOYSA-N 0.000 description 1
- OXFBEEDAZHXDHB-UHFFFAOYSA-M 3-methyl-1-octylimidazolium chloride Chemical compound [Cl-].CCCCCCCCN1C=C[N+](C)=C1 OXFBEEDAZHXDHB-UHFFFAOYSA-M 0.000 description 1
- ZDCDAHDJRRXOMB-UHFFFAOYSA-N C(C)[N+](CCOC)(C)CC.C[N+]1(CCCCC1)CCC Chemical compound C(C)[N+](CCOC)(C)CC.C[N+]1(CCCCC1)CCC ZDCDAHDJRRXOMB-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GSBKRFGXEJLVMI-UHFFFAOYSA-N Nervonyl carnitine Chemical compound CCC[N+](C)(C)C GSBKRFGXEJLVMI-UHFFFAOYSA-N 0.000 description 1
- MNEULJIEBNFFMT-UHFFFAOYSA-L [Br-].FC=1N(C([N+](C1)(CCCCCC)F)(C)F)C.C(CCC)[N+]1=C(N(C=C1)C)C.[Br-] Chemical compound [Br-].FC=1N(C([N+](C1)(CCCCCC)F)(C)F)C.C(CCC)[N+]1=C(N(C=C1)C)C.[Br-] MNEULJIEBNFFMT-UHFFFAOYSA-L 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- INDFXCHYORWHLQ-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;1-butyl-3-methylimidazol-3-ium Chemical compound CCCCN1C=C[N+](C)=C1.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F INDFXCHYORWHLQ-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- YLZGECKKLOSBPL-UHFFFAOYSA-N indium nickel Chemical compound [Ni].[In] YLZGECKKLOSBPL-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- GVXHSMAJJFVLGD-UHFFFAOYSA-N methyl 5-chloro-7-(trifluoromethyl)thieno[3,2-b]pyridine-3-carboxylate Chemical compound C1=C(Cl)N=C2C(C(=O)OC)=CSC2=C1C(F)(F)F GVXHSMAJJFVLGD-UHFFFAOYSA-N 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- RVKZDIDATLDTNR-UHFFFAOYSA-N sulfanylideneeuropium Chemical compound [Eu]=S RVKZDIDATLDTNR-UHFFFAOYSA-N 0.000 description 1
- 125000005463 sulfonylimide group Chemical group 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/125—Intrinsically conductive polymers comprising aliphatic main chains, e.g. polyactylenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/127—Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/128—Intrinsically conductive polymers comprising six-membered aromatic rings in the main chain, e.g. polyanilines, polyphenylenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H01L51/441—
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
본 발명은 비휘발성 액체인 이온성 액체를 이용하여, 금속 나노소재, 비정질 또는 결정질 산화물, 탄소나소튜브, 금속 나노와이어, 전도성 고분자 등과의 복합화를 통해 고형이 아닌 액형 또는 겔(gel) 타입으로 구현한 플렉서블 전도성 복합재료 및 이를 포함하는 플렉서블 전자소자에 관한 것이다.The present invention can be implemented in a liquid or gel type, which is not a solid through the combination of a metal nanomaterial, an amorphous or crystalline oxide, a carbon nanotube, a metal nanowire, and a conductive polymer, using an ionic liquid which is a nonvolatile liquid. To a flexible conductive composite material and a flexible electronic device including the same.
유연소자는 딱딱한 기판에 형성된 소자와는 달리 반복적인 스트레스가 가해져도 소자의 특성을 유지하며, 쉽게 구부러지는 특성을 가지고 있어서, 플렉시블 디스플레이, 터치 스크린 등의 구부러지는 전자부품, 또는 자유 곡면 위에 부착 가능한 센서 등에 사용될 수 있다. Unlike devices formed on a rigid substrate, flexible devices maintain the characteristics of the device even when repeated stress is applied and have easy bending characteristics. Therefore, flexible devices can be used for flexible electronic devices such as a display, a touch screen, Sensor or the like.
종래기술에 의하면, 이러한 유연소자는 일반적으로 기능성 세라믹/금속 소재 등을 유연한 고분자 소재와 혼합하여 유연한 필름 형태로 제조한 후, 전극 증착 등의 후속 공정을 통하여 만들어진다. 또는, 딱딱한 기판 혹은 특수하게 설계된 웨이퍼, 보다 상세하게는 SOI(silicon on insulator), GaN, GaAs 등으로 구성된 반도체용 웨이퍼 위에 반도체 공정을 사용하여 소자를 구현하고, 이를 식각 공정과 전사 공정을 통해 유연기판에 소자를 구현하기도 한다. According to the prior art, such a flexible device is generally manufactured by mixing a functional ceramic / metal material with a flexible polymer material to form a flexible film, and then performing a subsequent process such as electrode deposition. Alternatively, devices can be fabricated on semiconductor wafers composed of rigid substrates or specially designed wafers, more specifically, silicon on insulators (SOI), GaN, GaAs, etc., and processed by etching Devices may be implemented on the substrate.
일예로 대한민국 등록특허 제10-1262319호는 그래핀 전극과 반도체층 사이의 접촉저항을 감소시키기 위한 방법을 통해 신축성, 유연성 및 투명도가 개선된 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자를 개시하고 있다.For example, Korean Patent No. 10-1262319 discloses a flexible / strainable semiconductor device including a graphene electrode having improved stretchability, flexibility and transparency through a method for reducing the contact resistance between a graphene electrode and a semiconductor layer Lt; / RTI >
한편, 이러한 종래기술에서는 전극소재로 비정질 또는 결정질 산화물, 탄소나소튜브, 금속 나노선, 전도성 고분자 재료 등에 기반한 복합소재 등이 주로 이용되고 있다.On the other hand, in such a conventional technique, a composite material based on an amorphous or crystalline oxide, a carbon nanotube, a metal nanowire, or a conductive polymer material is mainly used as an electrode material.
그러나, 이러한 소재들은 모두 고형 전극 부류에 해당함으로 궁극적인 플렉서블 소자인 접거나 신축 가능한 소자(foldable, stretchable device)에 적용하여 장수명을 확보하기에는 어려움이 있는 실정이다.However, since all of these materials correspond to the solid electrode class, they are difficult to secure long life by applying to the foldable or stretchable device which is the ultimate flexible device.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 본 발명의 하나의 목적은 이온성 액체 및 금속 나노 입자 등을 포함하는 플렉서블 전극복합재료를 제공하는 것이다.Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a flexible electrode composite material including ionic liquids, metal nanoparticles, and the like.
본 발명의 또 하나의 목적은 상기와 같은 플렉서블 전극복합재료를 포함하는 플렉서블 전자소자를 제공하는 것이다.It is still another object of the present invention to provide a flexible electronic device including the above-described flexible electrode composite material.
본 발명의 또 하나의 목적은 이온성 액체 및 금속 나노 입자 등을 포함하는 플렉서블 배선복합재료를 제공하는 것이다.Another object of the present invention is to provide a flexible wiring composite material comprising an ionic liquid and metal nanoparticles.
본 발명의 또 하나의 목적은 상기와 같은 플렉서블 배선복합재료를 포함하는 배선이 포함된 플렉서블 회로기판을 제공하는 것이다.It is still another object of the present invention to provide a flexible circuit board including wiring including the above-described flexible wiring composite material.
상기와 같은 목적을 달성하기 위한 본 발명의 하나의 향상은, 이온성 액체; 및 금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상;을 포함하는 플렉서블 전극복합재료에 관한 것이다.According to one aspect of the present invention, there is provided an ionic liquid comprising: an ionic liquid; And at least one selected from the group consisting of metal nanoparticles, metal nanowires, carbon nanotubes, amorphous metal oxides, crystalline metal oxides, and conductive polymers.
상기 금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상이 이온성 액체 100 중량부에 대하여 10~2,000중량부일 수 있다.At least one selected from the group consisting of the metal nanoparticles, the metal nanowires, the carbon nanotubes, the amorphous metal oxides, the crystalline metal oxides, and the conductive polymers may be 10 to 2,000 parts by weight based on 100 parts by weight of the ionic liquid.
상기 이온성 액체가 하기 화학식 1 또는 화학식 2로 표시될 수 있다.The ionic liquid may be represented by the following formula (1) or (2).
[화학식 1][Chemical Formula 1]
[화학식 2](2)
상기 금속 나노 입자 및 금속 나노와이어가 금, 은, 구리, 백금, 팔라듐, 니켈인듐, 알루미늄, 철, 로듐, 루테늄, 오스뮴, 코발트, 몰리브덴, 아연, 바나듐, 텅스텐, 티탄, 망간, 크롬, 및 이들의 합금으로 이루어진 군에서 선택된 1종 이상일 수 있다. Wherein the metal nanoparticles and the metal nanowires are selected from the group consisting of gold, silver, copper, platinum, palladium, nickel indium, aluminum, iron, rhodium, ruthenium, osmium, cobalt, molybdenum, zinc, vanadium, tungsten, Or an alloy thereof.
상기 결정질 또는 비정질 금속산화물이 CeO2, Al2O3, TiO2, ZnO, SiC, TiC, AlN, SiN, SnO2, MgO, WO3, PbO, In2O3, Bi2O3, Ta2O5, BaTiO3, BaZrO3, ZrO2 , 및 ZrO3로 이루어진 군에서 선택된 1종 이상일 수 있다.Wherein the crystalline or amorphous metal oxide is selected from the group consisting of CeO 2 , Al 2 O 3 , TiO 2 , ZnO, SiC, TiC, AlN, SiN, SnO 2 , MgO, WO 3 , PbO, In 2 O 3 , Bi 2 O 3 , Ta 2 O 5 , BaTiO 3 , BaZrO 3 , ZrO 2 , and ZrO 3 .
상기 전도성 고분자가 폴리에틸렌디옥시씨오펜(3,4-Ethylenedioxythiophene), 폴리티오펜, 폴리-3-헥실티오펜, 폴리아닐린, 폴리피롤, 폴리비닐카바졸, 폴리아세틸렌, 폴리피리딘, 폴리아줄렌, 폴리인돌, 폴리페닐렌비닐렌, 폴리페닐렌, 폴리아진, 폴리퀴논, 폴리페닐렌 설파이드, 폴리푸란, 폴리이소티아나프틴 및 이들의 유도체로 이루어진 군에서 선택된 1종 이상일 수 있다.Wherein the conductive polymer is at least one selected from the group consisting of 3,4-ethylenedioxythiophene, polythiophene, poly-3-hexylthiophene, polyaniline, polypyrrole, polyvinylcarbazole, polyacetylene, polypyridine, polyazulene, polyindole, And may be at least one selected from the group consisting of polyphenylene vinylene, polyphenylene, polyazine, polyquinone, polyphenylene sulfide, polyfuran, polyisothianaphthene, and derivatives thereof.
본 발명의 또 하나의 양상은 상기와 같은 플렉서블 전극복합재료를 포함하는 플렉서블 전자소자에 관한 것이다.Another aspect of the present invention relates to a flexible electronic device including the above-described flexible electrode composite material.
상기 플렉서블 전자소자가 태양전자 소자(photovoltaic device), 전기변색성 소자(electrochromic device), 전기영동 소자(electrophoretic device), 유기 박막트랜지스터(organic thin film transistor), 발광소자 또는 유기 메모리 소자(organic memory device)일 수 있다.The flexible electronic device may be a photovoltaic device, an electrochromic device, an electrophoretic device, an organic thin film transistor, a light emitting device or an organic memory device ).
본 발명의 또 하나의 양상은, 이온성 액체; 및 금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상;을 포함하는 플렉서블 배선복합재료에 관한 것이다.Another aspect of the present invention relates to an ionic liquid; And at least one selected from the group consisting of metal nanoparticles, metal nanowires, carbon nanotubes, amorphous metal oxides, crystalline metal oxides, and conductive polymers.
본 발명의 또 하나의 양상은, 다수의 전자소자; 다수의 상기 전자소자를 전기적으로 연결하는 배선; 다수의 상기 전자소자 및 상기 배선이 위치하는 기판;을 포함하고, 상기 배선은 본 발명에 따른 상기 플렉서블 배선복합재료를 포함하는 플렉서블 인쇄회로기판에 관한 것이다.Another aspect of the present invention is a semiconductor device comprising: a plurality of electronic elements; A wiring for electrically connecting the plurality of electronic devices; And a substrate on which a plurality of the electronic elements and the wiring are located, wherein the wiring is a flexible printed circuit board including the flexible wiring composite material according to the present invention.
상기 다수의 전자소자가 본 발명에 따른 플렉서블 전자소자를 포함할 수 있다.The plurality of electronic devices may include a flexible electronic device according to the present invention.
본 발명에 따른 플렉서블 전도성 복합재료는 비휘발성 액체인 이온성 액체를 이용하여, 금속 나노소재, 비정질 또는 결정질 산화물, 탄소나소튜브, 금속 나노와이어, 전도성 고분자 등과의 복합화를 통해 고형이 아닌 액형 또는 겔(gel) 타입으로 플렉서블 전극 및 플렉서블 배선 소재로 적용됨으로써 기존 고형 전극과 비교하여 장기적인 전극 수명을 확보할 수 있으므로 플렉서블 소자의 수명 장수화를 도모할 수 있는 효과가 있다.The flexible conductive composite material according to the present invention can be formed into a non-solid liquid form or gel through the combination of metal nanomaterials, amorphous or crystalline oxides, carbon nanotubes, metal nanowires, conductive polymers and the like using an ionic liquid which is a non- type electrode and a flexible wiring material, it is possible to secure a long-term electrode life as compared with conventional solid electrodes, and therefore, the lifetime of the flexible element can be prolonged.
본 발명은 다양한 변환을 가할 수 있고 여러 가지 구현예를 가질 수 있는 바, 특정 구현예들을 예시하고 상세하게 설명하고자 한다. 그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변환, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. 본 발명을 설명함에 있어서 관련된 공지 기술에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우 그 상세한 설명을 생략한다.The present invention is capable of various modifications and various implementations, and particular implementations are illustrated and described in detail. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제1, 제2 등의 용어는 다양한 구성요소들을 설명하는데 사용될 수 있지만, 상기 구성요소들은 상기 용어들에 의해 한정되어서는 안 된다. 상기 용어들은 하나의 구성요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
본 출원에서 사용한 용어는 단지 특정한 구현예를 설명하기 위해 사용된 것으로, 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 출원에서, "포함하다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
이하, 본 발명에 대하여 상세히 설명하기로 한다. 다만, 이는 예시로서 제시되는 것으로, 이에 의해 본 발명이 제한되지는 않으며 본 발명은 후술할 청구범위의 범주에 의해 정의될 뿐이다.Hereinafter, the present invention will be described in detail. However, it should be understood that the present invention is not limited thereto, and the present invention is only defined by the scope of the following claims.
본 발명의 하나의 양상은, 이온성 액체; 및 금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상;을 포함하는 플렉서블 전극복합재료에 관한 것이다.One aspect of the present invention relates to an ionic liquid; And at least one selected from the group consisting of metal nanoparticles, metal nanowires, carbon nanotubes, amorphous metal oxides, crystalline metal oxides, and conductive polymers.
먼저, 본 발명에 이용되는 이온성 액체의 특성에 대해 살펴보면 다음과 같다.First, the characteristics of the ionic liquid used in the present invention are as follows.
이온성 액체란, 양이온과 음이온만으로 구성되는 염(salt)에도 불구하고 상온에서 액체인 일련의 화합물을 말한다. 이온액체는 고온 안정성이며 액체 온도 범위가 넓은, 증기압이 거의 0이고, 이온성이면서 저점성, 높은 산화,환원 내성을 갖는 특성을 가지고 있다. 이온성 액체는 친수성이어도 소수성 일 수 있고, 또 그 종류는 특별히 제한되는 것이 아니지만, 예를 들면 지방족계 이온성 액체, 이미다졸륨계 이온성 액체, 피리디늄계 이온성 액체 등을 들 수 있다. An ionic liquid is a series of compounds that are liquid at room temperature, despite the salts consisting solely of cations and anions. The ionic liquid has high temperature stability, wide liquid temperature range, almost zero vapor pressure, ionic properties, low viscosity, high oxidation and reduction resistance. The ionic liquid may be hydrophilic or hydrophobic, and the kind thereof is not particularly limited, and examples thereof include an aliphatic ionic liquid, an imidazolium ionic liquid, and a pyridinium ionic liquid.
지방족계 이온성 액체로서는, N,N,N-트리메틸-N-프로필암모늄 비스(트리플루오로메탄술포닐) 이미드(이하, TMPA-TFSI라고 한다), N-메틸-N-프로필 피페리디늄 비스(트리플루오로메탄술포닐) 이미드, N,N-디에틸-N-메틸-N-(2-메톡시에틸) 암모늄비스(트리플루오로메탄술포닐) 이미드, N,N-디에틸-N-메틸-N-(2-메톡시에틸) 암모늄 테트라플루오로 붕산염 등을 들 수 있다. Examples of the aliphatic ionic liquid include N, N, N-trimethyl-N-propylammonium bis (trifluoromethanesulfonyl) imide (hereinafter referred to as TMPA-TFSI), N-methyl-N-propylpiperidinium N, N-diethyl-N-methyl-N- (2-methoxyethyl) ammonium bis (trifluoromethanesulfonyl) imide, Ethyl-N-methyl-N- (2-methoxyethyl) ammonium tetrafluoroborate and the like.
이미다졸륨계 이온성 액체로서는, 1,3-디알킬이미다졸륨염, 1,2,3-트리알킬 이미다졸륨염 등을 들 수 있다. 구체적으로는, 1,3-디알킬이미다졸륨염으로서는, 1-에틸-3-메틸이미다졸륨 브로마이드, 1-에틸-3-메틸-이미다졸륨 클로라이드, 1-에틸-3-메틸이미다졸륨(L)-유산염, 1-에틸-3-메틸이미다졸륨 헥사플루오로 인산염, 1-에틸-3-메틸이미다졸륨 테트라플루오로 붕산염(이하, EMI-BF4라고 한다), 1-부틸-3-메틸이미다졸륨 클로라이드, 1-부틸-3-메틸이미다졸륨 헥사플루오로 인산염, 1-부틸-3-메틸이미다졸륨 테트라플루오로 붕산염(이하, BMI-BF4라고 한다), 1-부틸-3-메틸이미다졸륨 트리플루오로메탄 설폰산염, 1-부틸-3-메틸이미다졸륨(L)-유산염, 1-헥실-3-메틸이미다졸륨 브로마이드, 1-헥실-3-메틸이미다졸륨클로라이드, 1-헥실-3-메틸이미다졸륨 헥사플루오로 인산염, 1-헥실-3-메틸이미다졸륨 테트라플루오로 붕산염, 1-헥실-3-메틸이미다졸륨 트리플루오로메탄 설폰산염, 1-옥틸-3-메틸이미다졸륨 클로라이드, 1-옥틸-3-메틸이미다졸륨 헥사플루오로 인산염, 1-디실-3-메틸이미다졸륨 클로라이드, 1-도데실-3-메틸이미다졸륨 클로라이드, 1-테트라 디실-3-메틸이미다졸륨 클로라이드, 1-핵사데실-3-메틸이미다졸륨 클로라이드, 1-옥타데실-3-메틸이미다졸륨클로라이드 등을 들 수 있다. 1,2,3-트리알킬 이미다졸륨염으로서는, 1-에틸-2,3-디메틸이미다졸륨 브로마이드, 1-에틸-2,3-디메틸이미다졸륨 클로라이드, 1-부틸-2,3-디메틸이미다졸륨 브로마이드, 1-부틸-2,3-디메틸이미다졸륨클로라이드, 1-부틸-2,3-디메틸이미다졸륨 테트라플루오로 붕산염, 1-부틸-2,3-디메틸이미다졸륨 트리플루오로메탄 설폰산염, 1-헥실-2,3-디메틸이미다졸륨 브로마이드, 1-헥실-2,3-디메틸이미다졸륨 클로라이드, 1-헥실-2,3-디메틸이미다졸륨 트리플루오로메탄 설폰산염 등을 들 수 있다. Examples of imidazolium ionic liquids include 1,3-dialkylimidazolium salts and 1,2,3-trialkylimidazolium salts. Specific examples of the 1,3-dialkylimidazolium salt include 1-ethyl-3-methylimidazolium bromide, 1-ethyl-3-methyl-imidazolium chloride, Ethyl-3-methylimidazolium tetrafluoroborate (hereinafter referred to as EMI-BF 4 ), 1-ethyl-3-methylimidazolium hexafluorophosphate, Methylimidazolium hexafluorophosphate, 1-butyl-3-methylimidazolium tetrafluoroborate (hereinafter referred to as BMI-BF 4 ), 1-butylimidazolium tetrafluoroborate Butylimidazolium trifluoromethanesulfonate, 1-butyl-3-methylimidazolium (L) -sulfate, 1-hexyl-3-methylimidazolium bromide, 1- Methylimidazolium chloride, 1-hexyl-3-methylimidazolium hexafluorophosphate, 1-hexyl-3-methylimidazolium tetrafluoroborate, 1-hexyl-3-methylimidazolium trifluoromethane Sulfonic acid , 1-octyl-3-methylimidazolium chloride, 1-octyl-3-methylimidazolium hexafluorophosphate, 1-decyl-3-methylimidazolium chloride, 3-methylimidazolium chloride, 1-tetradecyl-3-methylimidazolium chloride, 1-nuclear decenyl-3-methylimidazolium chloride and 1-octadecyl-3-methylimidazolium chloride. Examples of 1,2,3-trialkylimidazolium salts include 1-ethyl-2,3-dimethylimidazolium bromide, 1-ethyl-2,3-dimethylimidazolium chloride, Imidazolium bromide, 1-butyl-2,3-dimethylimidazolium chloride, 1-butyl-2,3-dimethylimidazolium tetrafluoroborate, 1 -butyl-2,3-dimethylimidazolium trifluoro 1-hexyl-2,3-dimethylimidazolium bromide, 1-hexyl-2,3-dimethylimidazolium chloride, 1-hexyl-2,3-dimethylimidazolium trifluoromethanesulfone Acid salts and the like.
피리디늄계 이온 액체로서는, 에틸 피리디늄염이나 부틸피리디늄염, 헥실 피리디늄염 등을 들 수 있다. 구체적으로는, 에틸 피리디늄염으로서는, 1-에틸 피리디늄 브로마이드, 1-에틸 피리디늄 클로라이드를 들 수 있다. 부틸 피리디늄염으로서는, 1-부틸 피리디늄 브로마이드, 1-부틸 피리디늄 클로라이드, 1-부틸 피리디늄 헥사플루오로 인산염, 1-부틸 피리디늄 테트라플루오로 붕산염, 1-부틸 피리디늄트리플루오로메탄 설폰산염 등을 들 수 있다. 헥실 피리디늄염으로서는, 1-헥실 피리디늄 브로마이드, 1-헥실 피리디늄 클로라이드, 1-헥실 피리디늄 헥사플루오로 인산염, 1-헥실 피리디늄 테트라플루오로 붕산염, 1-헥실 피리디늄 트리플루오로메탄 설폰산염 등을 들 수 있다.Examples of the pyridinium-based ionic liquids include ethylpyridinium salts, butylpyridinium salts, and hexylpyridinium salts. Specific examples of the ethylpyridinium salt include 1-ethylpyridinium bromide and 1-ethylpyridinium chloride. Examples of the butylpyridinium salt include 1-butylpyridinium bromide, 1-butylpyridinium chloride, 1-butylpyridinium hexafluorophosphate, 1-butylpyridinium tetrafluoroborate, 1-butylpyridinium trifluoromethanesulfone Acid salts and the like. Examples of the hexylpyridinium salts include 1-hexylpyridinium bromide, 1-hexylpyridinium chloride, 1-hexylpyridinium hexafluorophosphate, 1-hexylpyridinium tetrafluoroborate, 1-hexylpyridinium trifluoromethanesulfone Acid salts and the like.
본 발명에 따른 플렉서블 전극복합재료에 있어서, 상기 이온성 액체로서 바람직하게는 하기 화학식 1의 1-부틸-3-메틸리미다조리움 비스(트리플루오르메틸 술포닐)이미드(1-Butyl-3-methylimidazorium bis(trifluoromethyl sulfonyl)imide)(BMIM TFSI)를 이용하거나, 화학식 2의 1-옥틸-3-메틸리미다조리움 비스(트리플루오르메틸 술포닐)이미드(1-Octyl-3-methylimidazorium bis(trifluoromethyl sulfonyl)imide)(OMIM TFSI)를 이용할 수 있다. In the flexible electrode composite material according to the present invention, the ionic liquid is preferably 1-butyl-3-methylimidazolium bis (trifluoromethylsulfonyl) imide (1-Butyl-3- methylimidazorium bis (trifluoromethyl sulfonyl) imide (BMIM TFSI), or 1-octyl-3-methylimidazorium bis (trifluoromethyl) imide of formula sulfonyl imide (OMIM TFSI).
[화학식 1][Chemical Formula 1]
[화학식 2](2)
본 발명에 따른 플렉서블 전극복합재료에 있어서, 상기 금속 나노입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상은 이온성 액체 100 중량부에 대하여 10 ~ 2,000 중량부인 것이 바람직하다. 이때 10 중량부 미만이면 전기 전도성이 낮아 바람직하지 않고, 2,000 중량부를 초과하면 고체 상태의 전극이 형성되어 바람직하지 않다.In the flexible electrode composite material according to the present invention, at least one selected from the group consisting of the metal nanoparticles, the metal nanowires, the carbon nanotubes, the amorphous metal oxides, the crystalline metal oxides, and the conductive polymers is added to 100 parts by weight of the ionic liquid Is preferably 10 to 2,000 parts by weight. If the amount is less than 10 parts by weight, the electrical conductivity is low, which is undesirable. If the amount is more than 2,000 parts by weight, solid state electrodes are formed.
상기 금속 나노입자 및 금속 나노와이어의 소재로는 금, 은, 구리, 백금, 팔라듐, 니켈, 인듐, 알루미늄, 철, 로듐, 루테늄, 오스뮴, 코발트, 몰리브덴, 아연, 바나듐, 텅스텐, 티탄, 망간, 크롬, 및 이들의 합금으로 이루어진 군에서 선택된 1종 이상을 사용할 수 있으나, 이에 한정되는 것은 아니다.The metal nanoparticles and the metal nanowires may be made of gold, silver, copper, platinum, palladium, nickel, indium, aluminum, iron, rhodium, ruthenium, osmium, cobalt, molybdenum, zinc, vanadium, tungsten, Chromium, and alloys thereof, but is not limited thereto.
본 발명에 따른 플렉서블 전극복합재료에 있어서, 상기 탄소나노튜브로서는, 예를 들면, 탄소의 층(그래핀)이 1층만 통 형상으로 되어 있는 단층 카본 나노 튜브나, 탄소의 층이 복수층 적층된 상태에서 통 형상으로 되어 있는 2층 카본 나노 튜브 또는 다층 카본 나노 튜브, 밑이 빠진 종이컵의 형태를 한 그래핀이 적층된 구조의 컵 스택형 나노 튜브 등을 사용할 수 있다.In the flexible electrode composite material according to the present invention, examples of the carbon nanotubes include single-walled carbon nanotubes in which a single layer of carbon (graphene) is cylindrical in shape, and single-walled carbon nanotubes in which a plurality of carbon layers Layered carbon nanotubes or multi-walled carbon nanotubes in the form of a cylinder in the state of a cup-stacked nanotube having a structure in which graphenes in the form of a paper cup without a base are stacked.
탄소나노튜브 형상은 특별히 한정되지 않고, 선단이 닫혀 있는 것 또는 선단이 개공되어 있는 것 중 어느 것이라도 이용할 수 있다. 탄소나노튜브 평균 길이는, 100㎚ 이상 2000㎛ 이하의 범위가 바람직하고, 500㎚ 이상 100㎛ 이하의 범위가 더욱 바람직하다. 탄소나노튜브의 평균 길이가 100㎚ 이상 2000㎛ 이하의 범위이면, 이온성 액체 중에서의 분산성이 양호하다. The shape of the carbon nanotubes is not particularly limited, and any of those having a tip closed or a tip open can be used. The average length of the carbon nanotubes is preferably in the range of 100 nm to 2000 탆, and more preferably in the range of 500 nm to 100 탆. When the average length of the carbon nanotubes is in the range of 100 nm or more and 2000 占 퐉 or less, the dispersibility in the ionic liquid is good.
상기 금속산화물로서 CeO2, Al2O3, TiO2, ZnO, SiC, TiC, AlN, SiN, SnO2, MgO, WO3, PbO, In2O3, Bi2O3, Ta2O5, BaTiO3, BaZrO3, ZrO2 , 또는 ZrO3를 단독 또는 2종 이상 병행하여 같이 사용할 수 있다. 상기 금속산화물은 결정질 또는 비정질일 수 있다.As the metal oxide CeO 2, Al 2 O 3, TiO 2, ZnO, SiC, TiC, AlN, SiN, SnO 2, MgO, WO 3, PbO, In 2 O 3, Bi 2 O 3, Ta 2 O 5, BaTiO 3 , BaZrO 3 , ZrO 2 , or ZrO 3 may be used alone or in combination of two or more. The metal oxide may be crystalline or amorphous.
상기 전도성고분자로서 폴리에틸렌디옥시씨오펜(3,4-Ethylenedioxythiophene), 폴리티오펜, 폴리-3-헥실티오펜, 폴리아닐린, 폴리피롤, 폴리비닐카바졸, 폴리아세틸렌, 폴리피리딘, 폴리아줄렌, 폴리인돌, 폴리페닐렌비닐렌, 폴리페닐렌, 폴리아진, 폴리퀴논, 폴리페닐렌 설파이드, 폴리푸란, 폴리이소티아나프틴 또는 이들의 유도체를 단독 또는 2종 이상 병행하여 사용할 수 있으며, 바람직하게는 폴리아세틸렌, 폴리피롤, 폴리티오펜, 폴리파라페닐렌, 폴리(3,4-에틸렌이옥시티오펜), 폴리페닐렌설파이드, 폴리파라-페닐렌비닐렌, 또는 폴리아닐린 등을 사용할 수 있고, 분자구조는 아래와 같다.As the conductive polymer, it is possible to use a conductive polymer such as 3,4-ethylenedioxythiophene, polythiophene, poly-3-hexylthiophene, polyaniline, polypyrrole, polyvinylcarbazole, polyacetylene, polypyridine, polyazulene, Polyphenylenevinylene, polyphenylene, polyazine, polyquinone, polyphenylene sulfide, polyfuran, polyisothianaphthene, or derivatives thereof may be used alone or in combination of two or more kinds, , Polypyrrole, polythiophene, polyparaphenylene, poly (3,4-ethylenedioxythiophene), polyphenylene sulfide, polyparaphenylene vinylene, or polyaniline, and the molecular structure is as follows .
본 발명의 또 하나의 양상은 상기와 같은 구성을 가지는 플렉서블 전극복합재료를 포함하는 플렉서블 전자소자에 관한 것이다.Another aspect of the present invention relates to a flexible electronic device including the flexible electrode composite material having the above-described structure.
본 발명에 따른 플렉서블 전자소자에 있어서, 상기 플렉서블 전자소자는 태양전자 소자, 전기변색성 소자, 전기영동 소자, 유기 박막트랜지스터, 발광소자 또는 유기 메모리 소자일 수 있다.In the flexible electronic device according to the present invention, the flexible electronic device may be a solar electronic device, an electrochromic device, an electrophoretic device, an organic thin film transistor, a light emitting device, or an organic memory device.
본 발명의 또 하나의 양상은, 이온성 액체; 및 금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상;을 포함하는 플렉서블 배선복합재료에 관한 것이다.Another aspect of the present invention relates to an ionic liquid; And at least one selected from the group consisting of metal nanoparticles, metal nanowires, carbon nanotubes, amorphous metal oxides, crystalline metal oxides, and conductive polymers.
여기에서, 상기 이온성 액체, 금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자는 플렉서블 전극복합재료에서 설명한 바와 동일하므로 중복 설명을 생략한다.Here, the ionic liquid, metal nanoparticles, metal nanowires, carbon nanotubes, amorphous metal oxides, crystalline metal oxides, and conductive polymers are the same as those described in the flexible electrode composite material, and thus duplicate descriptions thereof are omitted.
본 발명의 또 하나의 양상은, 다수의 전자소자; 다수의 상기 전자소자를 전기적으로 연결하는 배선; 다수의 상기 전자소자 및 상기 배선이 위치하는 기판;을 포함하고, 상기 배선이 본 발명에 따른 상기 플렉서블 배선복합재료를 포함하는 플렉서블 인쇄회로기판에 관한 것이다.Another aspect of the present invention is a semiconductor device comprising: a plurality of electronic elements; A wiring for electrically connecting the plurality of electronic devices; And a substrate on which a plurality of the electronic elements and the wiring are located, wherein the wiring comprises the flexible wiring composite material according to the present invention.
이때 다수의 전자소자가 본 발명에 따른 플렉서블 전자소자를 포함할 수 있다.At this time, a plurality of electronic devices may include the flexible electronic device according to the present invention.
이상 설명한 바와 같이 본 발명에 따른 플렉서블 전극복합재료 및 플렉서블 전극복합재는 비휘발성 액체인 이온성 액체를 이용하여, 금속 나노소재, 비정질 또는 결정질 산화물, 탄소나소튜브, 금속 나노와이어, 전도성 고분자 등과의 복합화를 통해 고형이 아닌 액형 또는 겔(gel) 타입으로 플렉서블 전극 및 플렉서블 배선 소재로 적용됨으로써 기존 고형 전극과 비교하여 장기적인 전극 수명을 확보할 수 있으므로 플렉서블 소자의 수명 장수화를 도모할 수 있는 효과가 있다.INDUSTRIAL APPLICABILITY As described above, the flexible electrode composite material and the flexible electrode composite material according to the present invention can be combined with a metal nanomaterial, an amorphous or crystalline oxide, a carbon nanotube, a metal nanowire, a conductive polymer, etc. using an ionic liquid which is a non- It is possible to secure long-term electrode life as compared with the conventional solid electrode by applying the flexible electrode or the flexible wiring material in a liquid or gel type rather than a solid type, so that the life span of the flexible element can be prolonged .
특히, 기존의 플렉서블 기판의 경우 소자와 소자 사이의 연결시 배선이 고형 전도성물질로 이루어져 쉽게 손상되거나 노화되는 문제점이 있었으나, 본 발명에 따르면 이와 같은 문제점을 해결할 수 있게 된다.In particular, in the case of a conventional flexible substrate, there is a problem that when the device is connected to the device, the interconnection is made of a solid conductive material and is easily damaged or aged. However, the present invention can solve such a problem.
위에서 본 발명의 바람직한 구현예들에 대하여 설명하였으나, 해당 기술 분야에서 통상의 지식을 가진 자라면 특허청구범위에 기재된 본 발명의 사상으로부터 벗어나지 않는 범위 내에서, 구성 요소의 부가, 변경, 삭제 또는 추가 등에 의해 본 발명을 다양하게 수정 및 변경시킬 수 있을 것이며, 이 또한 본 발명의 권리범위 내에 포함된다고 할 것이다. 예를 들어, 단일형으로 설명되어 있는 각 구성 요소는 분산되어 실시될 수도 있으며, 마찬가지로 분산된 것으로 설명되어 있는 구성 요소들도 결합된 형태로 실시될 수 있다. 본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 균등 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.It will be apparent to those skilled in the art that additions, alterations, deletions, or additions to components may be made without departing from the spirit of the invention as set forth in the appended claims. The present invention can be variously modified and changed by those skilled in the art, and it is also within the scope of the present invention. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.
Claims (16)
금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상;을
포함하는 플렉서블 전극복합재료.Ionic liquids; And
At least one selected from the group consisting of metal nanoparticles, metal nanowires, carbon nanotubes, amorphous metal oxides, crystalline metal oxides, and conductive polymers;
Containing flexible electrode composite material.
상기 금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상이 이온성 액체 100 중량부에 대하여 10 ~ 2,000중량부인 것을 특징으로 하는 플렉서블 전극복합재료.The method according to claim 1,
Wherein at least one selected from the group consisting of the metal nanoparticles, the metal nanowires, the carbon nanotubes, the amorphous metal oxide, the crystalline metal oxide, and the conductive polymer is 10 to 2,000 parts by weight based on 100 parts by weight of the ionic liquid. Electrode composite material.
[화학식 1]
[화학식 2]
The flexible electrode composite material according to claim 1, wherein the ionic liquid is represented by the following formula (1) or (2).
[Chemical Formula 1]
(2)
상기 금속 나노 입자 및 금속 나노와이어가 금, 은, 구리, 백금, 팔라듐, 니켈, 인듐, 알루미늄, 철, 로듐, 루테늄, 오스뮴, 코발트, 몰리브덴, 아연, 바나듐, 텅스텐, 티탄, 망간, 크롬, 및 이들의 합금으로 이루어진 군에서 선택된 1종 이상인 것을 특징으로 하는 플렉서블 전극복합재료.The method according to claim 1,
Wherein the metal nanoparticles and the metal nanowires are selected from the group consisting of gold, silver, copper, platinum, palladium, nickel, indium, aluminum, iron, rhodium, ruthenium, osmium, cobalt, molybdenum, zinc, vanadium, tungsten, And at least one selected from the group consisting of these alloys.
상기 결정질 또는 비정질 금속산화물이 CeO2, Al2O3, TiO2, ZnO, SiC, TiC, AlN, SiN, SnO2, MgO, WO3, PbO, In2O3, Bi2O3, Ta2O5, BaTiO3, BaZrO3, ZrO2 , 및 ZrO3로 이루어진 군에서 선택된 1종 이상인 것을 특징으로 하는 플렉서블 전극복합재료.The method according to claim 1,
Wherein the crystalline or amorphous metal oxide is selected from the group consisting of CeO 2 , Al 2 O 3 , TiO 2 , ZnO, SiC, TiC, AlN, SiN, SnO 2 , MgO, WO 3 , PbO, In 2 O 3 , Bi 2 O 3 , Ta 2 O 5 , BaTiO 3 , BaZrO 3 , ZrO 2 , and ZrO 3 .
상기 전도성 고분자가 폴리에틸렌디옥시씨오펜(3,4-Ethylenedioxythiophene), 폴리티오펜, 폴리-3-헥실티오펜, 폴리아닐린, 폴리피롤, 폴리비닐카바졸, 폴리아세틸렌, 폴리피리딘, 폴리아줄렌, 폴리인돌, 폴리페닐렌비닐렌, 폴리페닐렌, 폴리아진, 폴리퀴논, 폴리페닐렌 설파이드, 폴리푸란, 폴리이소티아나프틴 및 이들의 유도체로 이루어진 군에서 선택된 1종 이상인 것을 특징으로 하는 플렉서블 전극복합재료.The method according to claim 1,
Wherein the conductive polymer is at least one selected from the group consisting of polyethylene dioxythiophene, polythiophene, poly-3-hexylthiophene, polyaniline, polypyrrole, polyvinylcarbazole, polyacetylene, polypyridine, polyazulene, polyindole, Wherein the flexible electrode composite material is at least one selected from the group consisting of polyphenylene vinylene, polyphenylene, polyazine, polyquinone, polyphenylene sulfide, polyfuran, polyisothianaphthene, and derivatives thereof.
금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상;을
포함하는 플렉서블 배선복합재료.Ionic liquids; And
At least one selected from the group consisting of metal nanoparticles, metal nanowires, carbon nanotubes, amorphous metal oxides, crystalline metal oxides, and conductive polymers;
Including flexible wiring composites.
상기 금속 나노 입자, 금속 나노와이어, 탄소나노튜브, 비정질 금속산화물, 결정질 금속산화물 및 전도성 고분자로 이루어진 군에서 선택된 1종 이상이 이온성 액체 100 중량부에 대하여 10 ~ 2,000중량부인 것을 특징으로 하는 플렉서블 배선복합재료.10. The method of claim 9,
Wherein at least one selected from the group consisting of the metal nanoparticles, the metal nanowires, the carbon nanotubes, the amorphous metal oxide, the crystalline metal oxide, and the conductive polymer is 10 to 2,000 parts by weight based on 100 parts by weight of the ionic liquid. Wiring composite materials.
[화학식 1]
[화학식 2]
The flexible folded composite material according to claim 9, wherein the ionic liquid is represented by the following formula (1) or (2).
[Chemical Formula 1]
(2)
상기 금속 나노 입자 또는 금속 나노와이어가 금, 은, 구리, 백금, 팔라듐, 니켈, 인듐, 알루미늄, 철, 로듐, 루테늄, 오스뮴, 코발트, 몰리브덴, 아연, 바나듐, 텅스텐, 티탄, 망간, 크롬, 및 이들의 합금으로 이루어진 군에서 선택된 1종 이상인 것을 특징으로 하는 플렉서블 배선복합재료.10. The method of claim 9,
Wherein the metal nanoparticles or the metal nanowires are selected from the group consisting of gold, silver, copper, platinum, palladium, nickel, indium, aluminum, iron, rhodium, ruthenium, osmium, cobalt, molybdenum, zinc, vanadium, tungsten, And alloys thereof. ≪ RTI ID = 0.0 > 21. < / RTI >
상기 결정질 또는 비정질 금속산화물이 CeO2, Al2O3, TiO2, ZnO, SiC, TiC, AlN, SiN, SnO2, MgO, WO3, PbO, In2O3, Bi2O3, Ta2O5, BaTiO3, BaZrO3, ZrO2 , 및 ZrO3로 이루어진 군에서 선택된 1종 이상인 것을 특징으로 하는 플렉서블 배선복합재료.10. The method of claim 9,
Wherein the crystalline or amorphous metal oxide is selected from the group consisting of CeO 2 , Al 2 O 3 , TiO 2 , ZnO, SiC, TiC, AlN, SiN, SnO 2 , MgO, WO 3 , PbO, In 2 O 3 , Bi 2 O 3 , Ta 2 O 5 , BaTiO 3 , BaZrO 3 , ZrO 2 , and ZrO 3 .
상기 전도성 고분자가 폴리에틸렌디옥시씨오펜(3,4-Ethylenedioxythiophene), 폴리티오펜, 폴리-3-헥실티오펜, 폴리아닐린, 폴리피롤, 폴리비닐카바졸, 폴리아세틸렌, 폴리피리딘, 폴리아줄렌, 폴리인돌, 폴리페닐렌비닐렌, 폴리페닐렌, 폴리아진, 폴리퀴논, 폴리페닐렌 설파이드, 폴리푸란, 폴리이소티아나프틴 및 이들의 유도체로 이루어진 군에서 선택된 1종 이상인 것을 특징으로 하는 플렉서블 배선복합재료.10. The method of claim 9,
Wherein the conductive polymer is at least one selected from the group consisting of polyethylene dioxythiophene, polythiophene, poly-3-hexylthiophene, polyaniline, polypyrrole, polyvinylcarbazole, polyacetylene, polypyridine, polyazulene, polyindole, Wherein at least one selected from the group consisting of polyphenylenevinylene, polyphenylene, polyazine, polyquinone, polyphenylene sulfide, polyfuran, polyisothianaphthene and derivatives thereof is used.
다수의 상기 전자소자를 전기적으로 연결하는 배선; 및
다수의 상기 전자소자 및 상기 배선이 위치하는 기판;을 포함하고,
상기 배선은 제9항에 따른 플렉서블 배선복합재료를 포함하는 것인 플렉서블 인쇄회로기판.A plurality of electronic elements;
A wiring for electrically connecting the plurality of electronic devices; And
And a substrate on which a plurality of the electronic devices and the wiring are located,
Wherein the wiring comprises the flexible wiring composite material according to claim 9.
상기 다수의 전자소자가 제7항에 따른 플렉서블 전자소자를 포함하는 것인 플렉서블 인쇄회로기판.
16. The method of claim 15,
Wherein the plurality of electronic devices comprises the flexible electronic device according to claim 7.
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