KR20180064962A - Multi source signal generator and operating method thereof - Google Patents

Abstract

The present invention provides a multi-signal source generating apparatus. The multi-signal source generating device includes a voltage-controlled oscillator for generating a first source signal having a first frequency and delivering the first source signal to a first output port, an SPDT switch for selecting and outputting the first source signal or an external source signal, a first power amplifier for amplifying the power of the first source signal selected and outputted from the SPDT switch, and a multi-source conversion part for multiplying the frequency of the amplified first source signal and dividing the power of the multiplied-frequency signal and generating multi-source signals. The frequencies of the first source signal and the multi-source signals are included in a millimeter wave band or a sub-terahertz wave band. It is possible to implement stable CMOS.

Description

TECHNICAL FIELD [0001] The present invention relates to a multi-signal source generation apparatus and an operation method thereof,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to an electronic device, and more particularly, to a multi-signal source generation device implemented in a single chip and an operation method thereof.

Recently, the 5G mobile communication (5G) standard for high-speed mobile communication has been developed using the frequency of the millimeter wave band. In Korea and the United States, the frequency band of 28GHz is allowed by the 5G communication band. The International Telecommunication Union (ITU) discusses the 32 GHz band and the 40 to 43 GHz band as frequency bands for 5G communication, and several countries are developing and demonstrating 5G mobile communication technologies in different frequency bands. In addition, in the case of a short distance communication such as a wireless local area network (WLAN), a high-speed communication technology using an ISM band (Industrial Scientific Medical band) of 60 GHz band is being developed. 'IEEE 802.11ay', which extends the transmission speed and distance of 'IEEE 802.11ad' as a technical standard using frequencies in the 60 GHz band, is being standardized. In the case of 'IEEE 802.11ay', a transmission rate of 42.24 Gbps can be achieved by bonding four channels. Therefore, 'IEEE 802.11ay' standard is recently emerging as a suitable solution to apply to augmented reality (AR) or virtual reality (VR) technology.

In the fields of imaging, radar, spectroscopy as well as communication technology, frequencies above 100 GHz are used. The US company 'TeraSense' uses the 'IMPATT Diode' to implement signal sources in the 100GHz to 140GHz band, developing and selling terahertz imaging cameras, scanners, and signal sources. In addition, not only the 60 GHz band but also the 120 GHz and 240 GHz frequency bands are designated as the ISM band, and the utilization of these frequencies is very high.

Currently, commercial signal chips below 10GHz for the 4G, IEEE 802.11a / b / g / n / ac standard are readily available. However, it is difficult to purchase a low-cost signal source chip for commercial use at a frequency of 30 GHz or more. Most of the signal sources in the frequency band above 30 GHz band are purchased with expensive equipment, or the system is configured according to customer's demand using III-V devices. Therefore, due to the above-described problem, the development cost in the initial development stage of the product is high and the development period is long. Therefore, there is an urgent need to develop a low-cost CMOS signal source that supports the most usable frequency band among a millimeter wave band or a sub-THz band (30 GHz to 240 GHz).

It is an object of the present invention to provide a multi-signal source generation device implemented in a stable CMOS capable of supporting 5G, IEEE 802.11ad / ay, and ISM bands, which are most useful among a millimeter wave band and a sub-THz band, And to provide a method of operation thereof.

A multi-signal source generation apparatus according to an embodiment of the present invention includes a voltage controlled oscillator for generating a first source signal having a first frequency and delivering the first source signal to a first output port, a SPDT A switch, a first power amplifier for amplifying the power of the first source signal selected by the SPDT switch, and a multi-source converter for multiplying the frequency of the amplified first source signal or distributing power to generate a multi-source signal Wherein the frequencies of the first source signal and the multi-source signal are included in a millimeter wave band or a sub-terahertz wave band.

A method of operating a multi-signal source device in accordance with an embodiment of the present invention includes generating a first source signal, amplifying power of the first source signal, and multiplying the frequency of the first source signal step by step Wherein the first source signal and the multi-source signals have a frequency in a millimeter wave band or a sub-terahertz wave band, the multi-source generator is a complementary metal oxide semiconductor (CMOS) process.

According to the above-described configuration of the present invention, a plurality of source signals are generated in one chip. The plurality of source signals can support frequencies in the millimeter wave band and the sub-THz band (30 GHz to 240 GHz) and can be used in various systems such as 5G, WPAN, and ISM band. Particularly, in the case of a signal source chip of a Millimeter wave band and a sub-THz band (30 GHz to 240 GHz), only a single but highly expensive source signal is provided. The multi-signal source generation apparatus of the present invention can provide source signals of various bands at the same time and can be implemented in CMOS, thereby providing low cost and high utilization.

1 is a block diagram illustrating an exemplary multi-signal source generation apparatus of the present invention.
FIG. 2 is a block diagram showing in detail the configuration of the multi-source conversion unit of FIG. 1. FIG.
Figure 3a, Figure 3b, and 3c are diagrams showing the spectrum of the second to fourth source signal _{(2F O, 4F O, 8F} O) output from the respective output port 2 of the multi-source switching unit Fig.
4 is a flowchart briefly showing an operation method of the multi-signal source generating apparatus of the present invention.
FIG. 5 is a block diagram illustrating a multi-signal source generation apparatus implemented as a single chip according to an embodiment of the present invention. Referring to FIG.
6 is a block diagram illustrating an exemplary electronic device including a multi-signal source chip of the present invention.

In the following, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, details such as detailed configurations and structures are provided merely to assist in an overall understanding of embodiments of the present invention. Modifications of the embodiments described herein may be made by those skilled in the art without departing from the spirit and scope of the invention. Moreover, descriptions of well-known functions and structures are omitted for clarity and brevity. The terms described below are defined in consideration of the functions of the present invention and may vary depending on users, intentions of users, or consumers. Therefore, the definitions of the terms can be determined based on the matters described in the detailed description.

1 is a block diagram illustrating an exemplary multi-signal source generation apparatus of the present invention. Referring to FIG. 1, a multi-signal source generation apparatus 100 includes a voltage controlled oscillator 110, an SPDT switch 120, a first power amplifier 130, and a multi-source conversion unit 140.

The voltage-controlled oscillator 110 is an oscillator whose oscillation frequency is variable according to a control voltage. The voltage-controlled oscillator 110 may output a first source signal F _{O in a} millimeter wave band. The voltage controlled oscillator 110 may be implemented, for example, as a differential voltage controlled oscillator (VCO). The oscillation signal output from the positive output port (+ Port) of the voltage controlled oscillator 110 implemented by the differential VCO may be output to the first source signal F _O of the multi-signal source generator 100. On the other hand, the oscillation signal output to the negative output port (-Port) of the voltage controlled oscillator 110 may be transmitted to the SPDT switch 120.

The voltage-controlled oscillator 110 may have an oscillating characteristic for generating an oscillation signal (27 to 33 GHz) of a millimeter waveband frequency. In order to be implemented as a semiconductor device, the voltage controlled oscillator 110 may include a varactor. The frequency of the oscillation signal can be adjusted by using the characteristic that the capacitance C of the selector is varied according to the control voltage provided to the selector. In addition, it will be appreciated that the voltage controlled oscillator 110 may further include means for locking the frequency of the oscillating signal to be output.

SPDT switch (120, Single Pole Double Throw Switch) is a switch for selecting any one of a transmission signal (F _{IN_ EXT)} supplied from outside and output of the voltage-controlled oscillator (110). SPDT switch 120 is any one of the transmission signal (F _{IN_ EXT)} supplied from the output to the external of the voltage-controlled oscillator 110 by the selected value or the user previously set a be selected as a source signal for generating a multi-signal source have.

The first power amplifier 130 amplifies the power of the signal selected by the SPDT switch 120. In the case of the first source signal (F _O ) selected by the SPDT switch 120, the multi-source conversion unit 140 may separate and process the signals in various ways. Therefore, it is necessary to sufficiently amplify the power of the reduced first source signal (F _O ) and provide it to the multi-source conversion unit 140. The first power amplifier 130 should be designed to have a characteristic for amplifying a frequency band (for example, 30 GHz) of the first source signal F _O. In addition, the first power amplifier 130 is required to have an output characteristic of about 5 to 15 dBm to drive a frequency doubler (not shown) of the multi-source conversion unit 140.

The multi-source conversion unit 140 may convert the frequency of the first source signal F _o into various frequency multipliers to generate a plurality of source signals 2F ₀ , 4F ₀ , 8F ₀ . The multi-source conversion unit 140 multiplies the frequency of the first source signal F _O by a factor of two and outputs the result as the second source signal 2F _O. Multi-source switching section 140 to the frequency of the generated second signal source (2F _O) 2-fold multiplication again and outputs to a third source signal (4F _O). Multi-source switching unit 140 may be output to the third source signal fourth source signal (8F _O) to 2-fold multiple of a frequency (4F _O). Here, a plurality of source signals _{(F O, 2F O, 4F} O, 8F O) are respectively a millimeter wave (Millimeter wave) band, or sub-source having a frequency of terahertz (sub-THz) band (30GHz ~ 240GHz) Signals.

The voltage controlled oscillator 110, the SPDT switch 120, the first power amplifier 130, and the multi-source conversion unit 140 constituting the multi-signal source generation apparatus 100 described above can be formed through a CMOS process have. Accordingly, the multi-signal source generation apparatus 100 capable of providing a plurality of source signals in a millimeter wave band and a sub-THz band can be implemented as a single semiconductor chip. The multi-signal source generation apparatus 100 can be used in various systems such as 5G communication, Wireless Personal Area Network (WPAN), and Industrial Scientific Medical (ISM) band communication.

FIG. 2 is a block diagram showing in detail the configuration of the multi-source conversion unit of FIG. 1. FIG. Referring to FIG. 2, the multi-source transformer 140 processes the first source signal F ₀ to generate a multi-source signal of a Millimeter wave band and a sub-THz band (30 GHz to 240 GHz) It produces a source signal _{(2F O, 4F O, 8F} O). To this end, the multi-source conversion unit 140 includes a plurality of frequency multipliers 141, 145 and 149, a plurality of power dividers 142 and 146, and power amplifiers 143, 144, 147 and 148.

The first frequency multiplier 141 may increase the frequency of the first source signal F _O by a factor of two. The first frequency multiplier 141 processes the first source signal F _o , which is a source signal, with a non-linear element to generate a plurality of harmonics. And a first frequency multiplier 141 is a second source signal (2F _O) having a frequency of two times of the plurality of harmonics will be selectively output. The first frequency multiplier 141 can be easily realized as a semiconductor element of a CMOS process.

A first power divider 142 divides the second signal source (2F _O) by two pathways. That is, the power distributor 142 to remove the first frequency multiplier 141, a second source signal (2F _O) output from a two signals having the same phase and waveform. However, the first power divider 142 divides the power of the input signal into two parts and outputs the divided power. The first power divider 142 may be implemented as a passive device, such as a Wilkinson divider having broadband characteristics, or may be implemented in the form of an active divider.

A second power amplifier 143 amplifies the power of one of the first power divider 142, a second source signal (2F _O) outputted from. The second power amplifier 143 amplifies the power of the second source signal 2F _o reduced by the first power splitter 142 and transmits it to the output port of the multi- do. A second power amplifier 143 may be configured as an output port (Output Port), a second source signal (2F _O) drive amplifier (Driver Amplifier) to amplify a signal of an optimum level according to the size of the delivered to.

A third power amplifier 144 amplifies the power of the other one of the first power divider 142, a second source signal (2F _O) outputted from. The power of the second source signal 2F ₀ is significantly reduced by the first frequency multiplier 141 and the first power divider 142. Therefore, in order to amplify the power of the reduced second source signal (2F _O), the third power amplifier 144 will have to be designed for amplification of the signal band the second source signal (2F _O). In particular, the third power amplifier 144 should be designed to have an output of 5 ~ 15dBm to convey a second source signal (2F _O) to a second frequency multiplier (145).

The second frequency multiplier 145 doubles the frequency of the second source signal 2F _O amplified by the third power amplifier 144. [ Second frequency multiplier 145 is to generate a plurality of harmonics (Harmonic) by processing the second signal source (2F _O) is the source signal into a non-linear element. And a second frequency multiplier 145, a third source signal (4F _O) corresponding to twice the frequency of the second signal source (2F _O) from a plurality of harmonics will be selectively output.

A second power splitter 146 is split into two transmission paths to the third source signal (4F _O). That is, the second power divider 146 separates the second frequency multiplier a third source signal (4F _O) output from the (145) into two signals having the same phase and waveform. However, the second power divider 146 divides and outputs only the power of the input signal. The second power splitter 146 may be implemented as a passive device, such as a Wilkinson divider having broadband characteristics, or may be implemented in the form of an active divider.

The fourth power amplifier 147 amplifies the power of one of the third source signal (4F _O) output from the second power divider (146). The fourth power amplifier 147 amplifies the power of the third source signal 4F ₀ reduced by the first power divider 146 and transmits it to the output port of the multi- do. The fourth power amplifier 147 may then be configured as an output port (Output Port), a third source signal drive amplifier (Driver Amplifier) to amplify a signal of an optimum level according to the size of (4F _O) delivered to the It will be well understood. That is, the fourth power amplifier 147 may include a driving amplifier for amplifying the magnitude of the signal when the amplitude of the third source signal 4F ₀ is small.

The fifth power amplifier 148 amplifies the power of the other one of the third source signal (4F _O) output from the second power divider (146). To amplify the power of the reduction of the third source signal (4F _O), the fifth power amplifier 148 will have to be designed for amplifying the signal of the third signal source (4F _O) band. In particular, the fifth power amplifier 148 should be designed to have an output of 5 to 15 dBm to deliver the third source signal 4F ₀ to the third frequency multiplier 149.

The third frequency multiplier 149 doubles the frequency of the third source signal 4F ₀ amplified by the fifth power amplifier 148. The fourth signal source (8F _O) generated by the third frequency multiplier (149) may be delivered to the output port of the multi-source signal generating unit 100. The

In the foregoing, an exemplary configuration of the multi-source conversion unit 140 has been briefly described. All the components included in the multi-source conversion unit 140 can be easily formed through a CMOS process. Therefore, the multi-signal source generation apparatus 100 according to the embodiment of the present invention can be implemented as a single chip type that provides a plurality of stable source signals (F ₀ , 2F ₀ , 4F ₀ , 8F ₀ ). Here, the frequency of the first source signal (F _O ) may be, for example, 30 GHz. In this case, the multi-signal source generation apparatus 100 may include a single semiconductor device that provides source signals of different frequencies used in a millimeter wave band and a sub-THz band (30 GHz to 240 GHz) Chip. ≪ / RTI >

Figure 3a, Figure 3b, and 3c are diagrams showing the spectrum of the second to fourth source signal _{(2F O, 4F O, 8F} O) output from the respective output port 2 of the multi-source switching unit Fig. Here, a case where the frequency of the first source signal (F ₀ ) provided as a source to the multi-source conversion unit 140 is 30 GHz will be exemplified.

Figure 3a shows the spectrum of the second source signal (2F _O). A second signal source (2F _O) is one of the harmonics corresponding to an integral multiple of the first source by the non-linear element of the first frequency multiplier 141 is the signal (F _O). And substantially two multiple frequency of a first source signal (F _O) (for example, 60GHz) harmonic (P1) is selected corresponding to a, the output is amplified by a second power amplifier (143).

Figure 3b shows the spectrum of the third source signal (4F _O). A plurality of harmonics may be generated by the second frequency multiplier 145. And the output will be the selected harmonic (P2) corresponding to the third signal source (4F _O) among the harmonics by the second frequency multiplier (145). Subsequently, the third signal source (4F _O) by the fourth power amplifier 147 is amplified to be transmitted to the output port.

Figure 3c shows the spectrum of the signal source 4 (8F _O). Harmonics of the third source signal 4F _O can be generated by the third frequency multiplier 149. And a third frequency will be output is selected harmonic (P3) corresponding to the fourth signal source (8F _O) among the harmonics by the multiplier 149. Then, the fourth signal source (8F _O) will be passed to the output port.

Above it has been described the spectrum of the second to fourth source signal of the present invention _{(2F O, 4F O, 8F} O). The multi-source transformer 140 of the present invention, which can be formed by a CMOS process, can generate a plurality of source signals having an integer multiple of the first source signal F _O. Accordingly, the multi-signal source generation apparatus 100 of the present invention can be easily implemented as a single low-cost semiconductor chip.

4 is a flowchart briefly showing an operation method of the multi-signal source generating apparatus of the present invention. Referring to FIG. 4, the multi-signal source generation apparatus 100 may multiply one source signal generated from one voltage controlled oscillator 110 and output the multiplied source signals.

In step S110, a first source signal F _O is generated from the voltage-controlled oscillator 110. It is assumed that the first source signal F _O has a frequency of 30 GHz. The first source signal (F _O ) generated from the voltage controlled oscillator (110) is separated into two signal paths and transmitted. One signal path is connected to the output port of the multi-signal source generating apparatus 100, and the other signal path is connected to the SPDT switch 120. The first source signal F _O generated by the voltage controlled oscillator 110 is outputted to the output port of the multi-signal source generator 100 and is provided as a source signal for generating multi-source signals at the same time.

In step S120, the power of the first source signal F _o is amplified by the first power amplifier 130. The first source signal (F _o ) will be processed using configurations consuming power such as a frequency doubler or a power divider. Therefore, it is necessary to amplify the power of the first source signal (F _O ) to have sufficient power before power consumption occurs. In order for the first multiplier 141 to process the first source signal F _o , the first power amplifier 130 must have an output characteristic of about 5 to 15 dBm.

In step S130, the first source signal (F _O), having a frequency of 30GHz is converted to a second signal source (2F _O) of the 60GHz frequency by the first frequency multiplier (141).

In step S140, a second source signal (2F _O) of the 60GHz frequency is separated into at least two signal paths. For example, one of the first power divider 142, a second source signal (2F _O) separated by a is transmitted to the output port of the multi-source signal generating unit 100. The Before being passed to the output port, a second source signal (2F _O) may be delivered to the output port after being amplified by a second power amplifier 143 and the driving amplifier.

In step S150, the other of the first power divider 142, a second source signal (2F _O) separated by is transmitted to a third power amplifier 144. Here, the second power amplifier 143 and the third power amplifier 144 should be designed to have gain and band characteristics for amplifying a 60 GHz band signal. The second power amplifier 143 and the third power amplifier 144 should have an output characteristic of about 5 to 15 dBm.

In step S160, a second source signal (2F _O) having a frequency of 60GHz is converted into a third signal source (4F _O) of 120GHz frequency by the second frequency multiplier (145).

In step S170, a third transmission path of the source signal (4F _O) of 120GHz frequency it is separated into at least two signal paths. That is, one of the second power splitter 146, a third source signal (4F _O) separated by a is transmitted to the output port of the multi-source signal generating unit 100. The Before being passed to the output port, the third source signal (4F _O) may be delivered to the output port after being amplified by the fourth power amplifier 147 and the driving amplifier.

In step S180, the second other one of the power divider 146, a third source signal (4F _O) separated by a is transmitted to the fifth power amplifier 148. Here, the fourth power amplifier 147 and the fifth power amplifier 148 have gain and band characteristics for amplifying a 120 GHz band signal. The fourth power amplifier 147 and the fifth power amplifier 148 should have an output characteristic of about 5 to 15 dBm.

In step S190, the third source signal (4F _O) having a frequency of 120GHz is converted into a fourth signal source (8F _O) of 240GHz frequency by the third frequency multiplier (149). The fourth signal source (8F _O) of 240GHz frequency will be passed to the output port of the multi-source signal generating unit 100. The

In the above description, the first source signal F ₀ of the frequency of 30 GHz is generated, and the generated first source signal F ₀ is multiplied and amplified to generate the plurality of source signals 2F ₀ , 4F ₀ , 8F ₀ The method has been briefly described. Here, although the frequency of the first source signal (F _o ) is described as 30 GHz, it will be understood that the present invention is not limited thereto. The frequency of the first source signal F _O through the voltage controlled oscillator 110 may be set to various values. And frequency of a plurality of source signals _{(2F O, 4F O, 8F} O) may also be provided with an integral multiple of the frequency of a first source signal (F _O).

In addition, an example in which the first source signal F _O is provided through the voltage-controlled oscillator 110 has been described above. However, in order to provide a more stable source signal, the externally provided first source signal F _O through the SPDT switch 120 may be a source for generating a plurality of source signals (2F ₀ , 4F ₀ , 8F ₀ ) Quot; can be used.

5 is a diagram illustrating a multi-signal source generation apparatus 200 implemented as a single chip according to an embodiment of the present invention. Referring to FIG. 5, the first to fourth source signals may be provided from a multi-signal source generation apparatus 200 implemented as a single chip. The multi-signal source generator 200 includes a voltage controlled oscillator 210, an SPDT switch 220, power amplifiers 230, 260, 270, 290 and 292, frequency multipliers 240, 270 and 294, (250, 280).

The voltage controlled oscillator 210 generates a first source signal at a frequency of 30 GHz. When the voltage controlled oscillator 210 is implemented as a differential VCO, the oscillation signal output to the positive output port (+ Port) may be output as the first source signal of the multi-signal source generator 200. In addition, the oscillation signal output to the negative output port (-Port) of the voltage controlled oscillator 210 may be transmitted to the SPDT switch 220. Through the control of the voltage controlled oscillator 210, source signals of various frequencies used in the millimeter waveband can be generated.

The SPDT switch 220 is a switch for selecting either the output of the voltage controlled oscillator 210 or the oscillation signal F _{IN_EXT} provided from the outside. SPDT switch 220 is any one of the oscillation signal (F _{IN_ EXT)} supplied from the output to the external of the voltage-controlled oscillator 210 by the selected value or the user previously set a be selected as a source signal for generating a multi-signal source have. SPDT switch 220 to the first power amplifier 230 in order to generate the second to fourth source signals by receiving the 30 GHz frequency signal of high purity from the outside.

The power of the first source signal in the 30 GHz band can be amplified by the first power amplifier 230. The power amplification by the first power amplifier 230 compensates for the subsequent frequency multiplication and the attenuation of the first source signal generated during power distribution.

The first frequency multiplier 240 multiplies the frequency of the first source signal by two and transmits the result to the first power splitter 250. That is, the first frequency multiplier 240 converts the first source signal of the frequency of 30 GHz to the second source signal of the frequency of 60 GHz.

The first power splitter 250 separates and transmits the second source signal of the 60 GHz frequency into two signal paths. One of the two separated signal paths is connected to the output port of the multi-signal generator 200 via the second power amplifier 260. And the other of the two separated signal paths is connected to the third power amplifier 265 to generate third to fourth source signals.

The second and third power amplifiers 260 and 265 amplify the second source signal of the separated 60 GHz frequency, respectively. The second source signals of the 60 GHz frequency separated by the two signal paths have the same phase and frequency, but the power is distributed and reduced. Thus, the power of the second source signals of the two reduced signal paths is amplified by the second and third power amplifiers 260 and 265, respectively, and delivered to the output port and the second frequency multiplier 270.

The second frequency multiplier 270 doubles the frequency of the second source signal of 60 GHz. The second frequency multiplier 270 will convert the frequency of the input second source signal to 120 GHz and output it as the third source signal.

The second power splitter 280 separates the third source signal of the 120 GHz frequency into two signal paths for transmission. One of the two separated signal paths is connected to the output port of the multi-signal generator 200 via the fourth power amplifier 290. And the other of the two separated signal paths is coupled to a fifth power amplifier 292 for generating a fourth source signal.

The fourth and fifth power amplifiers 290 and 292 amplify the power of the third source signal of the separated 120 GHz frequency, respectively. The third source signals of the 120 GHz frequency separated by the two signal paths have the same phase and frequency. However, the signal power of the third source signals of the separated 120 GHz frequency is in a reduced state. Accordingly, the powers of the reduced third source signals are amplified by the fourth and fifth power amplifiers 290 and 292, respectively, and transmitted to the output port and the third frequency multiplier 294.

The third frequency multiplier 294 doubles the frequency of the third source signal amplified by the fifth power amplifier 292. And the fourth source signal of the 240 GHz frequency generated by the third frequency multiplier 294 is transmitted to the output port of the multi-

In the foregoing, the structure of the multi-signal source generator 200, which can be implemented as a single chip by a CMOS process, has been briefly described. Here, although it has been described that the four source signals used as the source signals of the millimeter wave band and the sub-terahertz wave band are provided from the multi-signal source generation device 200, the present invention is not limited thereto. It will be appreciated that a greater number of source signals may be provided from multi-signal source device 200 using frequency multipliers and power dividers. In addition, although the case where the frequency of the first source signal generated by the voltage-controlled oscillator 210 is 30 GHz is taken as an example, the present invention is not limited thereto.

6 is a block diagram illustrating an exemplary electronic device including a multi-signal source chip of the present invention. Referring to FIG. 6, an electronic device 300 of the present invention may include a multi-signal source chip 310, a transceiver 320, and a processor 330. The multi-signal source chip 310 may include the multi-signal source generating apparatus 100 or 200 of FIG. 1 or 5 formed using a CMOS semiconductor process.

The multi-signal source chip 310 can output a plurality of source signals having different frequencies. The multi-signal source chip 310 may generate a plurality of source signals usable as signal sources in the millimeter wave band and the sub-terahertz wave band. Multi-signal source chip 310 is a millimeter-wave band, and the sub-can provide a terahertz wave band, a plurality of source signal has a frequency _{(30GHz ~ 240GHz) (F O} , 2F O, 4F O, 8F O) .

Transceiver 320 may transmit through an antenna 340 and modulates a sound signal or data signal using any one of a plurality of source signals (F _{O, O} 2F, 4F _{O, O} 8F). Alternatively, the transceiver 320 has a signal received through an antenna 340 using any one of a plurality of source signals (F _{O, O} 2F, 4F _{O, O} 8F) can be demodulated. For example, transceiver 320 may use any one of a source signal for 5G mobile communication, WPAN, ISM communication (F _{O, O} 2F, 4F _{O, O} 8F) by the signal source.

The processor 330 processes the signal transmitted to the transceiver 320 or the received signal to convert it into voice or data and processes the voice or data.

The above-described electronic device 300 may be a terminal or a base station for communication in the millimeter wave band and the sub-terahertz wave band (30 GHz to 240 GHz). When the multi-signal source chip 310 of the present invention is employed, the electronic device 300 can provide a signal source of various frequencies on a single chip, and thus can be configured at a low cost.

Although the embodiments of the present invention have been described in detail, the present invention can be modified in various ways without departing from the technical idea of the present invention. It is to be understood that the technical spirit of the invention is not limited solely to the described embodiments, but on the basis of the appended claims and their equivalents.

100: Multi-signal source generating device
110, 210: voltage-controlled oscillator
120, 220: SPDT switch
130, 143, 144, 147, 148, 230, 260, 265, 290, 292:
140: Multi-source conversion unit
141, 145, 149, 240, 270, 294: frequency multiplier
142, 146, 250, 280: Power distributor
300: electronic device
310: Multi-signal source chip
320: Transceiver
330: Processor
340: antenna

Claims (14)

A multi-signal source generation apparatus comprising:
A voltage controlled oscillator for generating and delivering a first source signal having a first frequency to a first output port;
A single pole double throw (SPDT) switch for selecting the first source signal or the external source signal;
A first power amplifier for amplifying the power of the first source signal selected in the SPDT switch; And
And a multi-source conversion unit multiplying the frequency of the amplified first source signal or dividing power to generate multi-source signals,
Wherein the frequency of the first source signal and the multi-source signal is included in a millimeter wave band or a sub-terahertz wave band. The method according to claim 1,
Wherein the voltage controlled oscillator, the SPDT switch, the first power amplifier, and the multi-source conversion unit are formed according to a complementary metal oxide semiconductor (CMOS) process. The method according to claim 1,
Wherein the first frequency is included in a band from 27 GHz to 33 GHz. The method according to claim 1,
Wherein the multi-source conversion unit comprises:
A first frequency doubler for multiplying the frequency of the amplified first source signal by two and converting the frequency of the amplified first source signal into a second source signal;
A second frequency doubler for multiplying the frequency of the second source signal by two and converting the frequency of the second source signal into a third source signal; And
And a third frequency doubler for multiplying the frequency of the third source signal by two and converting the fourth source signal into a fourth source signal. 5. The method of claim 4,
Wherein the multi-source conversion unit comprises:
A first power divider for dividing a signal path for delivering the second source signal outputted from the first frequency doubler to the second output port and the second frequency doubler, respectively; And
Further comprising a second power divider for dividing the signal path for delivering the third source signal output from the second frequency multiplier to the third output port and the third frequency multiplier, respectively. 6. The method of claim 5,
Wherein the multi-source conversion unit comprises:
A second power amplifier for amplifying and transmitting power of the second source signal transmitted to the second output port; And
And a third power amplifier for amplifying the power of the second source signal transmitted to the second frequency doubler. The method according to claim 6,
Wherein the multi-source conversion unit comprises:
A fourth power amplifier for amplifying and transmitting power of the third source signal transmitted to the third output port; And
And a fifth power amplifier for amplifying power of the third source signal transmitted to the third frequency doubler. 8. The method of claim 7,
Wherein the second power amplifier or the fourth power amplifier includes a drive amplifier. 8. The method of claim 7,
Wherein the first power amplifier, the third power amplifier, and the fifth power amplifier have an output range of 5 dBm to 15 dBm. The method according to claim 1,
The first source signal and the multi-source signal are transmitted to at least one of the fifth generation mobile communication (5G), wireless personal area network (WPAN), and industrial scientific medical (ISM) . A method of operating a multi-signal source device comprising:
Generating a first source signal;
Amplifying power of the first source signal; And
And multiplying the frequency of the first source signal step by step to generate multi-source signals,
Wherein the first source signal and the multi-source signals have a frequency in a millimeter wave band or a sub-terahertz wave band, and the multi-signal source generator is provided as a single chip formed through a complementary metal oxide semiconductor (CMOS) Lt; / RTI > 12. The method of claim 11,
Wherein the frequency of the first source signal is included in the 27 GHz to 33 GHz band. 12. The method of claim 11,
Wherein generating the multi-source signals comprises:
Multiplying the frequency of the first source signal to generate a second source signal;
Amplifying power of the second source signal;
Multiplying the frequency of the second source signal with the power amplified to generate a third source signal;
Amplifying power of the third source signal; And
Multiplying the frequency of the third source signal by the power amplified to produce a fourth source signal. 14. The method of claim 13,
Wherein generating the multi-source signals comprises:
And separating the signal path to transfer the second source signal or the third source signal to the output port.

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