KR20180053813A - Electrolyte composition for dye-sensitized solar cell and dye-sensitized solar cell comprising said electrolyte composition - Google Patents
Electrolyte composition for dye-sensitized solar cell and dye-sensitized solar cell comprising said electrolyte composition Download PDFInfo
- Publication number
- KR20180053813A KR20180053813A KR1020160150823A KR20160150823A KR20180053813A KR 20180053813 A KR20180053813 A KR 20180053813A KR 1020160150823 A KR1020160150823 A KR 1020160150823A KR 20160150823 A KR20160150823 A KR 20160150823A KR 20180053813 A KR20180053813 A KR 20180053813A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide
- dye
- solar cell
- sensitized solar
- group
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 37
- 239000003792 electrolyte Substances 0.000 title abstract description 38
- -1 5-methylthio-1,3,4-thiadiazole disulfide cation Chemical class 0.000 claims abstract description 28
- 239000002096 quantum dot Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 24
- CFWGYKRJMYXYND-UHFFFAOYSA-N 5-methylsulfanyl-3h-1,3,4-thiadiazole-2-thione Chemical compound CSC1=NN=C(S)S1 CFWGYKRJMYXYND-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 239000000975 dye Substances 0.000 claims description 56
- 229910044991 metal oxide Inorganic materials 0.000 claims description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 239000010936 titanium Substances 0.000 claims description 27
- 150000004706 metal oxides Chemical class 0.000 claims description 26
- 239000010955 niobium Substances 0.000 claims description 26
- 229910052751 metal Chemical class 0.000 claims description 23
- 239000002184 metal Chemical class 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- 229910052718 tin Inorganic materials 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 18
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052758 niobium Inorganic materials 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052707 ruthenium Inorganic materials 0.000 claims description 11
- 229910052727 yttrium Inorganic materials 0.000 claims description 11
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 8
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 229920001940 conductive polymer Polymers 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 7
- 229920000128 polypyrrole Polymers 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000006229 carbon black Substances 0.000 claims description 6
- 150000001722 carbon compounds Chemical class 0.000 claims description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 6
- 229920000767 polyaniline Polymers 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- RGZQGGVFIISIHZ-UHFFFAOYSA-N strontium titanium Chemical compound [Ti].[Sr] RGZQGGVFIISIHZ-UHFFFAOYSA-N 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910005540 GaP Inorganic materials 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 5
- 229910002665 PbTe Inorganic materials 0.000 claims description 5
- 229910005642 SnTe Inorganic materials 0.000 claims description 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 5
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 5
- 229920001197 polyacetylene Polymers 0.000 claims description 5
- 229910052959 stibnite Inorganic materials 0.000 claims description 5
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 4
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910018565 CuAl Inorganic materials 0.000 claims description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims description 4
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 4
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 claims description 4
- 229920001088 polycarbazole Polymers 0.000 claims description 4
- 229920002098 polyfluorene Polymers 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 229920002717 polyvinylpyridine Polymers 0.000 claims description 4
- 229910003450 rhodium oxide Inorganic materials 0.000 claims description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- UNRNJMFGIMDYKL-UHFFFAOYSA-N aluminum copper oxygen(2-) Chemical compound [O-2].[Al+3].[Cu+2] UNRNJMFGIMDYKL-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920000123 polythiophene Polymers 0.000 claims description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 2
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910001923 silver oxide Inorganic materials 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims 10
- 229920001721 polyimide Polymers 0.000 claims 10
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 4
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 4
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims 3
- 229910000457 iridium oxide Inorganic materials 0.000 claims 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
- 239000005751 Copper oxide Substances 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 239000006185 dispersion Substances 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 229920002492 poly(sulfone) Polymers 0.000 claims 1
- 229920001021 polysulfide Polymers 0.000 abstract description 6
- 239000005077 polysulfide Substances 0.000 abstract description 6
- 150000008117 polysulfides Polymers 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 20
- 239000002105 nanoparticle Substances 0.000 description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000010949 copper Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000010948 rhodium Substances 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 229910007717 ZnSnO Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000002866 fluorescence resonance energy transfer Methods 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 239000011630 iodine Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 229910001954 samarium oxide Inorganic materials 0.000 description 3
- 229940075630 samarium oxide Drugs 0.000 description 3
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 3
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 3
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 2
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XINWPLFXPWLORY-UHFFFAOYSA-N CSC1=NN=C(S1)S.CSC1=NN=CS1 Chemical compound CSC1=NN=C(S1)S.CSC1=NN=CS1 XINWPLFXPWLORY-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- CDAISMWEOUEBRE-GPIVLXJGSA-N inositol Chemical compound O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@H](O)[C@@H]1O CDAISMWEOUEBRE-GPIVLXJGSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- QZVHYFUVMQIGGM-UHFFFAOYSA-N 2-Hexylthiophene Chemical compound CCCCCCC1=CC=CS1 QZVHYFUVMQIGGM-UHFFFAOYSA-N 0.000 description 1
- OOWFYDWAMOKVSF-UHFFFAOYSA-N 3-methoxypropanenitrile Chemical compound COCCC#N OOWFYDWAMOKVSF-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-O Pyrrolidinium ion Chemical compound C1CC[NH2+]C1 RWRDLPDLKQPQOW-UHFFFAOYSA-O 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- KRNDJVZOVARADD-UHFFFAOYSA-N [O-2].[V+5].[La+3].[O-2].[O-2].[O-2] Chemical compound [O-2].[V+5].[La+3].[O-2].[O-2].[O-2] KRNDJVZOVARADD-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003303 ruthenium Chemical class 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2013—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
본 발명은 염료감응형 태양전지용 전해조성물 및 상기 전해조성물을 포함한 염료감응형 태양전지에 관한 것으로, 보다 상세하게는 태양광을 투과할 수 있는 재질의 윈도우와,; 상기 윈도우의 일면상에 형성되고 투명전도성전극 및 염료가 흡착된 다공질막을 포함한 광전극; 및 상기 광전극과 이격되어 대면하는 상대전극을 포함한 염료감응형 태양전지에 적용되는 전해 조성물에 있어서, 상기 전해조성물은 각각 하기 화학식 1의 5-메틸티오-1,3,4-티아디아졸-2-티올(5-Methylthio-1,3,4-thiadiazole-2-thiol, MTD) 및 화학식 2의 5-메틸티오-1,3,4-티아디아졸 디설파이드 양이온(5-Methylthio-1,3,4-thiadiazole disulfide cation,(MTD)2 2+)로 이루어진 산화환원쌍을 포함한 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물 및 상기 전해조성물을 포함한 염료감응형 태양전지에 관한 것이다.The present invention relates to an electrolyte composition for a dye-sensitized solar cell and a dye-sensitized solar cell comprising the electrolyte composition, and more particularly to a dye-sensitized solar cell comprising a window made of a material capable of transmitting sunlight; An optical electrode formed on one side of the window and including a transparent conductive electrode and a porous film on which the dye is adsorbed; And a counter electrode spaced apart from the photoelectrode, wherein the electrolytic composition comprises a 5-methylthio-1,3,4-thiadiazole- Methylthio-1,3,4-thiadiazole-2-thiol (MTD) and 5-methylthio-1,3,4-thiadiazole disulfide cations (5-Methylthio-1,3 , 4-thiadiazole disulfide cation (MTD) 2 2+ ), and a dye-sensitized solar cell comprising the electrolyte composition.
[화학식 1][Chemical Formula 1]
[화학식 2](2)
염료감응형 태양전지(dye-sensitized photovoltaic cell)는 1991년 스위스의 그라첼(Gratzel) 등에 의하여 발표된 광전기화학 태양전지로 대표되는 것으로서, 일반적으로 가시광선을 흡수하는 감광성 염료, 넓은 밴드갭 에너지를 갖는 금속산화물 나노입자, 촉매작용을 하는 상대전극(counter electrode), 그리고 그 사이에 채워진 전해질로 구성되어 있다. 염료감응형 태양전지는 기존의 실리콘 태양전지나 화합물 반도체 태양전지에 비해 그 제작비용이 저렴하고, 유기 태양전지에 비하여 그 효율이 높으며 이 외에도 친환경적이고 투명화가 가능하다는 장점을 가진다.The dye-sensitized photovoltaic cell is represented by a photovoltaic solar cell disclosed by Gratzel et al., Switzerland in 1991. The dye-sensitized photovoltaic cell generally includes a photosensitive dye that absorbs visible light, a wide band gap energy , A counter electrode that is catalyzed, and an electrolyte filled therebetween. The dye-sensitized solar cell is advantageous in that its production cost is lower than that of a conventional silicon solar cell or a compound semiconductor solar cell, its efficiency is higher than that of an organic solar cell, and it is also environmentally friendly and transparent.
최근, 염료감응형 태양전지의 광효율을 높이기 위한 연구가 집중되고 있다. 특히, 염료의 경우 특정 파장대에서만 광흡수가 일어나기 때문에 해당 염료가 흡수하지 않는 파장대의 빛을 흡수하여 해당 염료가 흡수할 수 있는 파장대의 빛으로 변환하거나 에너지전달이 되도록 하는 물질을 전극에 흡착하거나 또는 전해질에 혼합하여 광효율을 높이는 방법이 사용된다. 이러한 물질은 형광공명에너지전이(FRET) 또는 표면 플라즈몬 공명(SPR, surface plasmon resonance) 현상 등을 통해 염료에 직접적으로 흡수되지 않는 영역의 파장을 가진 태양 에너지를 이용한다. Recently, researches for increasing the light efficiency of a dye-sensitized solar cell have been concentrated. In particular, in the case of dyes, since light absorption occurs only in a specific wavelength band, a substance that absorbs light of a wavelength band not absorbed by the dye and converts the light into a light of a wavelength range capable of being absorbed by the dye, A method of mixing the electrolyte with the electrolyte to increase the light efficiency is used. These materials use solar energy with wavelengths that are not directly absorbed into the dye through fluorescence resonance energy transfer (FRET) or surface plasmon resonance (SPR) phenomena.
형광공명에너지 전이현상을 이용한 예로 대한민국 공개특허공보 제10-2012-40666호에는 광전극(음극), 대전극(양극), 및 상기 전극들 사이에 전해질을 포함하는 염료감응형 태양전지에 있어서, 상기 광전극이 염료 및 형광체가 화학적 결합을 통해 순차적으로 흡착된 반도체 산화물 박막을 포함하는 것을 특징으로 하는 염료감응형 태양전지가 개시되어 있다. 그러나, 상기 문헌에 개시된 염료감응형 태양전지들의 경우 FRET 효과에 의해 효율을 높이는 것이어서 염료와 형광물질이 Forster radius 내(1nm 내외)에 가까이 존재하여야만 효과가 발현될 수 있기 때문에 TiO2-감광제-에너지 전달물질이 모두 흡착 구조로 되어 있어야 하는 구조적 제한이 있으며, 이를 제조하기 위한 제조공정 역시 복잡해 질 수밖에 없다. 본 출원인 역시 최근 태양광을 투과할 수 있는 재질의 윈도우와, 상기 윈도우의 일면상에 형성되고 광민감성 염료가 흡착된 나노 금속산화물을 포함한 광전극 및 상기 광전극과 이격되어 대면하는 상대전극을 포함하며, 상기 광전극과 상대전극 사이에 충진되는 전해질을 포함한 염료감응형 태양전지에 적용되는 전해 조성물에 있어서, 상기 전해 조성물은 상기 광 민감성 염료의 흡광도가 60% 이하인 단파장 범위에서 광흡수를 하며 상기 염료의 흡광도가 60% 이상인 파장대에서 광에너지를 방출하는 에너지 전달물질을 포함한 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물 및 상기 전해 조성물을 포함한 염료감응형 태양전지에 관한 특허출원을 하여 등록을 받은 바 있다(대한민국 특허 제1429759호). 전술한 본 발명자의 특허는 전극에 에너지 전달물질을 직접적으로 흡착시키지 않고 에너지 전달물질을 단지 전해질에 첨가하는 간단한 방법으로도 광효율을 높일 수 있어 상당히 획기적인 태양전지 광효율 제고방법으로 평가할 수 있다. 또한, 본 발명자는 태양광을 투과할 수 있는 재질의 윈도우와, 상기 윈도우의 일면상에 형성되고 광민감성 염료가 흡착된 나노 금속산화물을 포함한 광전극 및 상기 광전극과 이격되어 대면하는 상대전극을 포함하며, 상기 광전극과 상대전극 사이에 충진되는 액상 전해 조성물을 포함한 염료감응형 태양전지에 적용되는 전해 조성물에 있어서, 상기 전해 조성물은 요오드 및 니켈 나노입자를 포함한 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물을 특허출원한 바 있다(특허출원 제2016-4949호). 전기한 본 발명자의 발명은 전해 조성물에 관한 것이기는 하나, 주로 형광공명에너지 전이현상 내지 표면 플라즈몬 공명 현상으로 인해 종래 염료에서 흡수할 수 없었던 파장대의 빛을 염료가 활용할 수 있는 파장대의 빛으로 변환활용하여 전체 태양전지의 광효율을 높이는 것으로 의미가 있다.For example, Korean Patent Laid-Open No. 10-2012-40666 discloses a dye-sensitized solar cell comprising a photoelectrode (cathode), a counter electrode (anode), and an electrolyte between the electrodes, Wherein the photoelectrode comprises a semiconductor oxide thin film sequentially adsorbed through a chemical bond between a dye and a fluorescent material. However, in the dye-sensitized solar cells disclosed in the above-mentioned document, the efficiency is enhanced by the FRET effect, so that the effect can be expressed only when the dye and the fluorescent material are present near the Forster radius (about 1 nm or less). Therefore, the TiO 2- There is a structural limitation that the materials should be all in the adsorption structure, and the manufacturing process for manufacturing the same is also inevitably complicated. The present applicant also has recently disclosed a method of manufacturing a solar cell including a window made of a material capable of transmitting sunlight, a photo electrode including a nano-metal oxide formed on one side of the window and having a photo-sensitive dye adsorbed thereon and a counter electrode facing away from the photo electrode And an electrolyte filled between the photoelectrode and the counter electrode, wherein the electrolyte composition absorbs light in a short wavelength range in which the absorbance of the photo-sensitive dye is 60% or less, A dye-sensitized solar cell comprising an energy transfer material capable of emitting light energy in a wavelength range in which the absorbance of the dye is at least 60%, and a dye-sensitized solar cell comprising the electrolyte composition, (Korean Patent No. 1429759). The inventor's patent described above can be evaluated as a remarkably improved solar cell luminous efficacy improvement method because it can increase the light efficiency even by a simple method of adding the energy transfer material to the electrolyte without directly adsorbing the energy transfer material to the electrode. The present inventors have also found that the present invention provides a method of manufacturing a solar cell comprising a window capable of transmitting sunlight, a photoelectrode including a nano-metal oxide formed on one side of the window and adsorbing a photosensitive dye, and a counter electrode spaced apart from the photo- And a liquid-phase electrolytic composition filled between the photoelectrode and the counter electrode, wherein the electrolytic composition comprises iodine and nickel nanoparticles, wherein the dye-sensitized solar cell comprises iodine and nickel nanoparticles. (Patent Application No. 2016-4949). The invention of the present inventor, which is related to an electrolytic composition, utilizes the conversion of light of a wavelength band which could not be absorbed in conventional dyes into light of a wavelength range where dyes can utilize due to fluorescence resonance energy transfer phenomenon or surface plasmon resonance phenomenon Thereby enhancing the light efficiency of the entire solar cell.
한편, 최근 염료감응 태양전지에서 고가의 루테늄계열의 염료를 대체하기 위해 유기, 무기 및 하이브리드계의 염료에 대한 연구가 진행되고 있다. 그 중에서 무기반도체를 나노입자화한 양자점 염료는 루테늄계 염료에 비해 흡광계수가 높아 수 μm 이하의 박막화가 가능하여 향후 유연성이 있는 태양전지에 적용될 수 있는 장점이 있고, 특정파장에서 강한 흡수를 나타내는 유기계 염료와는 달리, 단일 물질이 밴드갭 이상의 파장을 전영역에서 흡수하는 특징을 가지고 있으며, 보어 반지름(Bohr radius) 이하의 크기로 양자구속화(quantum confinement)를 통해 낮은 밴드갭(low bandgap)을 가지는 벌크(bulk)물질의 밴드갭을 쉽게 제어할 수 있는 특징을 가진다. 또한 높은 유전상수로 인해 생성된 엑시톤(exciton)이 쉽게 전자와 정공으로 분리될 수 있으며, 하나의 광자(photon)가 다수의 엑시톤을 생성하는 다중여기자(multiple exciton generation, MEG)의 생성이 가능하고, 용액공정이 가능하여 저가의 공정을 적용할 수 있는 장점을 가진다. 일반적인 양자점 태양전지는 polysulfide 계열의 전해질을 사용하는데 빛을 받으면 전해질에 의해 양자점이 부식하여 전류값이 급격히 감소하는 단점을 가지고 있다. 또한 양자점 흡광 영역을 전해질이 흡수하는 단점도 가지고 있다.Recently, organic dyes, inorganic dyes and hybrid dyes have been studied to replace dyes of ruthenium series in dye-sensitized solar cells. Among them, a quantum dot dye made of an inorganic semiconductor nanoparticle has a high extinction coefficient compared to a ruthenium-based dye, and can be applied to a flexible solar cell in the future, Unlike organic dyes, a single material has the property of absorbing wavelengths over the band gap in all regions, and has a low bandgap through quantum confinement with a size below the Bohr radius. The bandgap of a bulk material having a large thickness can be easily controlled. Also, excitons generated due to a high dielectric constant can be easily separated into electrons and holes, and it is possible to generate multiple exciton generation (MEG) in which one photon generates a large number of excitons , It is possible to apply a low-cost process because a solution process is possible. In general, quantum dot solar cells use a polysulfide type electrolyte. When the light is received, the quantum dots are corroded by the electrolyte, and the current value is rapidly decreased. It also has the disadvantage that the electrolyte absorbs the quantum dot absorption region.
따라서, 본 발명이 이루고자 하는 기술적 과제는 종래 양자점을 적용한 염료감응형 태양전지에 적용되던 폴리설파이드 계열의 전해질의 문제를 해결한 신규한 전해조성물 및 상기 전해조성물을 적용한 염료감응형 태양전지를 제공하는 것이다. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a novel electrolytic composition for solving the problem of a polysulfide-based electrolyte applied to a dye-sensitized solar cell to which a quantum dot has been applied and a dye-sensitized solar cell to which the electrolytic composition is applied will be.
상기 기술적 과제를 달성하기 위하여, 본 발명은 태양광을 투과할 수 있는 재질의 윈도우와,; 상기 윈도우의 일면상에 형성되고 투명전도성전극 및 염료가 흡착된 다공질막을 포함한 광전극; 및 상기 광전극과 이격되어 대면하는 상대전극을 포함한 염료감응형 태양전지에 적용되는 전해 조성물에 있어서, 상기 전해조성물은 각각 하기 화학식 1의 5-메틸티오-1,3,4-티아디아졸-2-티올(5-Methylthio-1,3,4-thiadiazole-2-thiol, MTD) 및 화학식 2의 5-메틸티오-1,3,4-티아디아졸 디설파이드 양이온(5-Methylthio-1,3,4-thiadiazole disulfide cation,(MTD)2 2+)로 이루어진 산화환원쌍을 포함한 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물을 제공한다.According to an aspect of the present invention, there is provided a solar cell comprising: a window made of a material capable of transmitting sunlight; An optical electrode formed on one side of the window and including a transparent conductive electrode and a porous film on which the dye is adsorbed; And a counter electrode spaced apart from the photoelectrode, wherein the electrolytic composition comprises a 5-methylthio-1,3,4-thiadiazole- Methylthio-1,3,4-thiadiazole-2-thiol (MTD) and 5-methylthio-1,3,4-thiadiazole disulfide cations (5-Methylthio-1,3 , 4-thiadiazole disulfide cation, (MTD) 2 2+ ). The present invention also provides an electrolyte composition for a dye-sensitized solar cell.
[화학식 1] [Chemical Formula 1]
[화학식 2](2)
또한, 본 발명은 상기 다공질막이 주석(Sn)산화물, 안티몬(Sb), 나이오븀(Nb) 또는 불소 도핑된 주석(Sn)산화물, 인듐(In)산화물, 주석 도핑된 인듐(In)산화물, 아연(Zn)산화물, 알루미늄(Al), 붕소(B), 갈륨(Ga), 수소(H), 인듐(In), 이트륨(Y), 타이타늄(Ti), 실리콘(Si) 또는 주석(Sn) 도핑된 아연(Zn)산화물, 마그네슘(Mg)산화물, 캐드뮴(Cd)산화물, 마그네슘아연(MgZn)산화물, 인듐아연(InZn)산화물, 구리알루미늄(CuAl)산화물, 실버(Ag)산화물, 갈륨(Ga)산화물, 아연주석산화물(ZnSnO), 타이타늄산화물(TiO2) 및 아연인듐주석(ZIS)산화물, 니켈(Ni)산화물, 로듐(Rh)산화물, 루세늄(Ru)산화물, 이리듐(Ir)산화물, 구리(Cu)산화물, 코발트(Co)산화물, 텅스텐(W)산화물, 티타늄(Ti)산화물, 지르코늄(Zr)산화물, 스트론튬(Sr)산화물, 란타넘(La)산화물, 바나듐(V)산화물, 몰리브데넘(Mo)산화물, 나이오븀(Nb)산화물, 알루미늄(Al)산화물, 이트늄(Y)산화물, 스칸듐(Sc)산화물, 사마륨(Sm)산화물 및 스트론튬타이타늄(SrTi)산화물로 이루어진 군으로부터 선택된 1종 이상의 금속산화물로 된 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물을 제공한다.The present invention also provides a method of manufacturing a semiconductor device, wherein the porous film comprises at least one of Sn, Sn, Nb, (Al), boron (B), gallium (Ga), hydrogen (H), indium (In), yttrium (Y), titanium (Ti), silicon (Si) or tin (Zn) oxide, magnesium (Mg) oxide, cadmium oxide, magnesium zinc (MgZn) oxide, indium zinc (InZn) oxide, copper aluminum (CuAl) oxide, silver (Ag) oxide, gallium ) Oxide, zinc tin oxide (ZnSnO), titanium oxide (TiO2) and zinc indium tin (ZIS) oxide, nickel (Ni) oxide, rhodium (Rh) oxide, ruthenium (Ru) oxide, iridium (Cu) oxide, cobalt (Co) oxide, tungsten (W) oxide, titanium (Ti) oxide, zirconium (Zr) oxide, strontium (Sr) oxide, lanthanum (La) oxide, vanadium Denominator (Mo) oxide, niobium (Nb) Characterized in that it is made of at least one metal oxide selected from the group consisting of aluminum oxide, aluminum oxide, yttrium oxide, scandium oxide, samarium oxide and strontium titanium oxide. An electrolytic composition for a sensitive solar cell is provided.
또한, 본 발명은 상기 염료가 양자점; 또는 500~600 nm사이에 큐-밴드(Q-bands)를 가지고 있는 물질인 포피린(porpyrine) 염료, 스쿠알린(squarine) 염료 또는 N719, N3, Ru505 및 Z907로 이루어진 군으로부터 선택된 1종 이상인 루테늄계 염료인 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물을 제공한다.Further, the present invention relates to a dye-sensitized solar cell, Or porphyrine dyes, squarine dyes, materials having Q-bands between 500 and 600 nm, or ruthenium-based dyes of at least one selected from the group consisting of N719, N3, Ru505 and Z907 The present invention provides an electrolytic composition for a dye-sensitized solar cell.
또한, 본 발명은 상기 양자점이 CdS, CdSe, ZnS, PbS, PbSe, PbTe, SnS, SnSe, SnTe, Sb2S3, Sb2Se3, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, Si 및 Ge로 구성된 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물을 제공한다.The quantum dots may be CdS, CdSe, ZnS, PbS, PbTe, SnS, SnSe, SnTe, Sb2S3, AlN, AlP, AlAs, GaN, GaP, GaAs, InS, InP, InAs, InSb, Si, and Ge. The present invention provides an electrolytic composition for a dye-sensitized solar cell.
또한, 본 발명은 상기 양자점의 밴드갭 (Band Gap) 이 1.55 eV 내지 3.1 eV 범위인 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물을 제공한다.The present invention also provides an electrolyte composition for a dye-sensitized solar cell, wherein the bandgap of the quantum dot is in a range of 1.55 eV to 3.1 eV.
또한, 본 발명은 태양광을 투과할 수 있는 재질의 윈도우와,; 상기 윈도우의 일면상에 형성되고 투명전도성전극 및 염료가 흡착된 다공질막을 포함한 광전극과; 상기 광전극과 이격되어 설치된 상대전극; 및 상기 광전극과 상대전극 사이에 충진되며 각각 하기 화학식 1의 5-메틸티오-1,3,4-티아디아졸-2-티올(5-Methylthio-1,3,4-thiadiazole-2-thiol, MTD) 및 화학식 2의 5-메틸티오-1,3,4-티아디아졸 디설파이드 양이온(5-Methylthio-1,3,4-thiadiazole disulfide cation,(MTD)2 2+)로 이루어진 산화환원쌍을 포함한 전해 조성물을 포함한 염료감응형 태양전지를 제공한다. The present invention also relates to a window made of a material capable of transmitting sunlight; A photoelectrode formed on one side of the window and including a transparent conductive electrode and a porous film on which the dye is adsorbed; A counter electrode spaced apart from the photoelectrode; And 5-Methylthio-1,3,4-thiadiazole-2-thiol (hereinafter referred to as " 5-methylthio- , MTD) and a redox pair consisting of 5-methylthio-1,3,4-thiadiazole disulfide cation (MTD) 2 2+ of formula ( 2 ) The present invention provides a dye-sensitized solar cell comprising an electrolytic composition containing
[화학식 1][Chemical Formula 1]
[화학식 2](2)
또한, 본 발명은 상기 다공질막이 주석(Sn)산화물, 안티몬(Sb), 나이오븀(Nb) 또는 불소 도핑된 주석(Sn)산화물, 인듐(In)산화물, 주석 도핑된 인듐(In)산화물, 아연(Zn)산화물, 알루미늄(Al), 붕소(B), 갈륨(Ga), 수소(H), 인듐(In), 이트륨(Y), 타이타늄(Ti), 실리콘(Si) 또는 주석(Sn) 도핑된 아연(Zn)산화물, 마그네슘(Mg)산화물, 캐드뮴(Cd)산화물, 마그네슘아연(MgZn)산화물, 인듐아연(InZn)산화물, 구리알루미늄(CuAl)산화물, 실버(Ag)산화물, 갈륨(Ga)산화물, 아연주석산화물(ZnSnO), 타이타늄산화물(TiO2) 및 아연인듐주석(ZIS)산화물, 니켈(Ni)산화물, 로듐(Rh)산화물, 루세늄(Ru)산화물, 이리듐(Ir)산화물, 구리(Cu)산화물, 코발트(Co)산화물, 텅스텐(W)산화물, 티타늄(Ti)산화물, 지르코늄(Zr)산화물, 스트론튬(Sr)산화물, 란타넘(La)산화물, 바나듐(V)산화물, 몰리브데넘(Mo)산화물, 나이오븀(Nb)산화물, 알루미늄(Al)산화물, 이트늄(Y)산화물, 스칸듐(Sc)산화물, 사마륨(Sm)산화물 및 스트론튬타이타늄(SrTi)산화물로 이루어진 군으로부터 선택된 1종 이상의 금속산화물로 된 것을 특징으로 하는 염료감응형 태양전지를 제공한다.The present invention also provides a method of manufacturing a semiconductor device, wherein the porous film comprises at least one of Sn, Sn, Nb, (Al), boron (B), gallium (Ga), hydrogen (H), indium (In), yttrium (Y), titanium (Ti), silicon (Si) or tin (Zn) oxide, magnesium (Mg) oxide, cadmium oxide, magnesium zinc (MgZn) oxide, indium zinc (InZn) oxide, copper aluminum (CuAl) oxide, silver (Ag) oxide, gallium ) Oxide, zinc tin oxide (ZnSnO), titanium oxide (TiO2) and zinc indium tin (ZIS) oxide, nickel (Ni) oxide, rhodium (Rh) oxide, ruthenium (Ru) oxide, iridium (Cu) oxide, cobalt (Co) oxide, tungsten (W) oxide, titanium (Ti) oxide, zirconium (Zr) oxide, strontium (Sr) oxide, lanthanum (La) oxide, vanadium Denominator (Mo) oxide, niobium (Nb) Characterized in that it is made of at least one metal oxide selected from the group consisting of aluminum oxide, aluminum oxide, yttrium oxide, scandium oxide, samarium oxide and strontium titanium oxide. A photovoltaic cell is provided.
또한, 본 발명은 상기 염료가 양자점; 또는 500~600 nm사이에 큐-밴드(Q-bands)를 가지고 있는 물질인 포피린(porpyrine) 염료, 스쿠알린(squarine) 염료 또는 N719, N3, Ru505 및 Z907로 이루어진 군으로부터 선택된 1종 이상인 루테늄계 염료인 것을 특징으로 하는 염료감응형 태양전지를 제공한다.Further, the present invention relates to a dye-sensitized solar cell, Or porphyrine dyes, squarine dyes, materials having Q-bands between 500 and 600 nm, or ruthenium-based dyes of at least one selected from the group consisting of N719, N3, Ru505 and Z907 The present invention provides a dye-sensitized solar cell characterized by being a dye.
또한, 본 발명은 상기 양자점이 CdS, CdSe, ZnS, PbS, PbSe, PbTe, SnS, SnSe, SnTe, Sb2S3, Sb2Se3, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, Si 및 Ge로 구성된 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지를 제공한다.The quantum dots may be CdS, CdSe, ZnS, PbS, PbTe, SnS, SnSe, SnTe, Sb2S3, AlN, AlP, AlAs, GaN, GaP, GaAs, InS, InP, InAs, InSb, Si, and Ge. The present invention provides a dye-sensitized solar cell comprising at least one selected from the group consisting of InSb, Si, and Ge.
또한, 본 발명은 상기 양자점의 밴드갭 (Band Gap) 이 1.55 eV 내지 3.1 eV 범위인 것을 특징으로 하는 염료감응형 태양전지를 제공한다.The present invention also provides a dye-sensitized solar cell characterized in that the bandgap of the quantum dot is in the range of 1.55 eV to 3.1 eV.
또한, 본 발명은 상기 투명전도성전극이 FTO (F-doped SnO2:SnO2:F), ITO, 평균 두께가 1 내지 1,000 nm인 금속, 금속 질화물, 금속 산화물, 탄소화합물 또는 전도성 고분자를 포함하는 전도성 필름인 것을 특징으로 하는 염료감응형 태양전지를 제공한다.Further, the present invention is a method for manufacturing a transparent conductive electrode, wherein the transparent conductive electrode comprises an FTO (F-doped SnO 2 : SnO 2 : F), ITO, metal having an average thickness of 1 to 1,000 nm, metal nitride, metal oxide, The present invention provides a dye-sensitized solar cell characterized by being a conductive film.
또한, 본 발명은 상기 금속 질화물이 IVB족 금속원소의 질화물, VB족 금속원소의 질화물, VIB족 금속원소의 질화물, 질화알루미늄, 질화갈륨, 질화인듐, 질화실리콘, 질화게르마늄 및 이들의 혼합물로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지를 제공한다.Further, the present invention is characterized in that the metal nitride is a nitride of Group IVB metal, a nitride of Group VB metal, a nitride of Group VIB, aluminum nitride, Wherein the dye-sensitized solar cell is at least one selected from the group consisting of a dye-sensitized solar cell and a dye-sensitized solar cell.
또한, 본 발명은 상기 금속 산화물이 주석(Sn)산화물, 안티몬(Sb), 나이오븀(Nb), 불소 도핑된 주석(Sn)산화물, 인듐(In)산화물, 주석 도핑된 인듐(In)산화물, 아연(Zn)산화물, 알루미늄(Al), 붕소(B), 갈륨(Ga), 수소(H), 인듐(In), 이트륨(Y), 타이타늄(Ti), 실리콘(Si) 또는 주석(Sn) 도핑된 아연(Zn)산화물, 마그네슘(Mg)산화물, 캐드뮴(Cd)산화물, 마그네슘아연(MgZn)산화물, 인듐아연(InZn)산화물, 구리알루미늄(CuAl)산화물, 실버(Ag)산화물, 갈륨(Ga)산화물, 아연주석산화물(ZNSNO), 타이타늄산화물(TiO2), 아연인듐주석(ZIS)산화물, 니켈(Ni)산화물, 로듐(Rh)산화물, 루세늄(Ru)산화물, 이리듐(Ir)산화물, 구리(Cu)산화물, 코발트(Co)산화물, 텅스텐(W)산화물 및 티타늄(Ti)산화물로 구성된 군으로부터 선택된 1종이상인 것을 특징으로 하는 염료감응형 태양전지를 제공한다.The present invention also provides a method of manufacturing a semiconductor device, wherein the metal oxide is selected from the group consisting of Sn oxide, antimony (Sb), niobium (Nb), fluorine doped tin (Sn) oxide, indium (In) oxide, tin- (Al), boron (B), gallium (Ga), hydrogen (H), indium (In), yttrium (Y), titanium (Ti), silicon (Si) or tin (Sn) Doped zinc (Zn) oxide, magnesium (Mg) oxide, cadmium oxide, magnesium zinc oxide, indium zinc oxide, copper aluminum oxide, silver oxide, Zinc oxide (ZNSO), titanium oxide (TiO2), zinc indium tin (ZIS) oxide, nickel (Ni) oxide, rhodium (Rh) oxide, ruthenium (Ru) oxide, iridium There is provided a dye-sensitized solar cell characterized in that the dye-sensitized solar cell is one type selected from the group consisting of copper (Cu) oxide, cobalt (Co) oxide, tungsten (W) oxide and titanium (Ti) oxide.
또한, 본 발명은 상기 탄소화합물이 활성탄, 흑연, 카본 나노튜브, 카본블랙 및 그라펜으로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지를 제공한다.The present invention also provides a dye-sensitized solar cell, wherein the carbon compound is at least one selected from the group consisting of activated carbon, graphite, carbon nanotube, carbon black and graphene.
또한, 본 발명은 상기 전도성 고분자가 PEDOT (폴리(3,4-에틸렌디옥시티오펜))-PSS(폴리(스티렌설포네이트)), 폴리아닐린-CSA, 펜타센, 폴리아세틸렌, P3HT(폴리(3-헥실티오펜), 폴리실록산 카르바졸, 폴리아닐린, 폴리에틸렌 옥사이드, (폴리(1-메톡시-4-(0-디스퍼스레드1)-2,5-페닐렌-비닐렌), 폴리인돌, 폴리카르바졸, 폴리피리디아진, 폴리이소티아나프탈렌, 폴리페닐렌 설파이드, 폴리비닐피리딘, 폴리티오펜, 폴리플루오렌, 폴리피리딘, 폴리피롤, 폴리설퍼나이트라이드 및 이들의 공중합체로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지를 제공한다.The present invention also provides a method for producing a conductive polymer, wherein the conductive polymer is at least one selected from the group consisting of PEDOT (poly (3,4-ethylenedioxythiophene) -PSS (poly (styrenesulfonate)), polyaniline-CSA, pentacene, polyacetylene, Hexylthiophene), polysiloxane carbazole, polyaniline, polyethylene oxide, (poly (1-methoxy-4- (0 -dispersed red) At least one member selected from the group consisting of polypyridazines, polyisothianaphthalenes, polyphenylene sulfides, polyvinylpyridines, polythiophenes, polyfluorenes, polypyridines, polypyrroles, polysulfuronitrides, and copolymers thereof The present invention provides a dye-sensitized solar cell.
또한, 본 발명은 상기 상대전극이 백금(Pt), 활성탄(activated carbon), 흑연(graphite), 카본 나노튜브, 카본블랙, p-형 반도체, PEDOT (폴리(3,4-에틸렌디옥시티오펜))- PSS(폴리(스티렌설포네이트)), 폴리아닐린-CSA, 펜타센, 폴리아세틸렌, P3HT(폴리(3-헥실티오펜), 폴리실록산 카르바졸, 폴리아닐린, 폴리에틸렌 옥사이드, (폴리(1-메톡시-4-(0-디스퍼스레드1)-2,5-페닐렌-비닐렌), 폴리인돌, 폴리카르바졸, 폴리피리디아진, 폴리이소티아나프탈렌, 폴리페닐렌 설파이드, 폴리비닐피리딘, 폴리티오펜, 폴리플루오렌, 폴리피리딘, 폴리피롤, 폴리설퍼나이트라이드, 이들의 유도체 및 이들의 공중합체로 구성된 군으로부터 선택된 1종 이상인 재질로 이루어진 필름을 기재에 형성한 것을 특징으로 하는 염료감응형 태양전지를 제공한다. The present invention also provides a method of fabricating a semiconductor device, wherein the counter electrode comprises at least one selected from the group consisting of Pt, activated carbon, graphite, carbon nanotube, carbon black, p-type semiconductor, PEDOT (poly (3,4-ethylenedioxythiophene) ) -PSS (poly (styrenesulfonate)), polyaniline-CSA, pentacene, polyacetylene, P3HT (poly (3-hexylthiophene), polysiloxane carbazole, polyaniline, polyethylene oxide, Polyphenylenevinylene, 4- (0-Dispersed Red 1) -2,5-phenylene-vinylene), polyindole, polycarbazole, polypyridazine, polyisothianaphthalene, polyphenylene sulfide, polyvinylpyridine, A dye-sensitized solar cell comprising a substrate and a film made of a material selected from the group consisting of polypyrrole, polypyridine, polypyrrole, polysulfuronitrile, derivatives thereof, and copolymers thereof, Lt; / RTI >
본 발명은 종래 양자점을 적용한 염료감응형 태양전지에 적용되던 폴리설파이드 계열의 전해질의 문제를 해결한 신규한 전해조성물 및 상기 전해조성물을 적용한 염료감응형 태양전지를 제공하여 염료감을형 태양전지의 광효율을 높일 수 있다. The present invention provides a novel electrolytic composition solving the problem of a polysulfide-based electrolyte applied to a dye-sensitized solar cell to which a quantum dot has been applied, and a dye-sensitized solar cell to which the electrolytic composition is applied, .
도 1은 본 발명에 따른 염료감응형 태양전지의 구조 및 그 내부에서 일어나는 광에너지의 전기에너지로의 변환과정을 설명하기 위한 모식도
도 2는 종래 요오드 기반 전해질과 황기반 전해질과 본 발명에 따른 염료감응형 태양전지용 전해질의 빛의 흡광도를 측정하여 대비한 그래프
도 3은 전해질과 상대전극에 따른 CV
도 4는 본 발명의 전해질과 황기반 전해질의 산화 환원 준위1 is a schematic diagram illustrating a structure of a dye-sensitized solar cell according to the present invention and a process of converting light energy into electrical energy occurring therein
FIG. 2 is a graph comparing the absorption of light of a conventional iodine-based electrolyte, a sulfur-based electrolyte and an electrolyte for a dye-sensitized solar cell according to the present invention
3 is a graph showing the relationship between the electrolyte
4 is a graph showing the relationship between the redox state of the electrolyte of the present invention and the sulfur-
이하에서 본 명세서에 첨부된 도면을 참조하여 본 발명을 상세히 설명한다. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the drawings attached hereto.
본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 이해할 수 있는 바와 같이, 후술하는 실시예는 본 발명을 단지 예시하기 위한 것이며, 본 발명의 개념과 범위를 벗어나지 않는 한도 내에서 다양한 형태로 변형될 수 있다. 가능한 한 동일하거나 유사한 부분은 도면에서 동일한 인용부호를 사용하여 나타낸다.It will be understood by those skilled in the art that the following embodiments are merely illustrative of the present invention and that various changes may be made without departing from the spirit and scope of the present invention. It can be deformed. Wherever possible, the same or similar parts are denoted using the same reference numerals in the drawings.
본 명세서에서 사용되는 전문 용어는 단지 특정 실시예를 언급하기 위한 것이며, 본 발명을 한정하는 것을 의도하지 않는다. 명세서에서 사용되는 "포함하는"의 의미는 특정 특성, 영역, 정수, 단계, 동작, 요소 및/또는 성분을 구체화하며, 다른 특성, 영역, 정수, 단계, 동작, 요소 및/또는 성분의 존재나 부가를 제외시키는 것은 아니다.The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Means that a particular feature, region, integer, step, operation, element and / or component is specified and that the presence or absence of other features, regions, integers, steps, operations, elements, and / It does not exclude addition.
본 발명의 명세서에 기재된 "나노"라는 용어는 1 내지 1,000 nm 범위의 나노 스케일을 의미하며, 경우에 따라 마이크로 단위를 포함할 수도 있다. 또한, 명세서에 기재된 "나노 입자"라는 용어는 나노 스케일을 가진 모든 형태의 입자를 포함한다. 또한, 본 명세서에서 '염료'는 종래 전통적인 의미의 유기화합물인 염료(dye)뿐 아니라 때로는 무기물 양자점(quantum dot) 등 광감응형 태양전지에 있어 태양광에 광민감성 물질을 모두 통칭하는 의미로도 사용되며, '염료감응형 태양전지' 역시 동일하게 전통적인 '염료'를 광감응물질로 사용한 것 외에 '양자점'을 단독으로 광감응물질로 사용한 태양전지와 '염료' 및 '양자점'을 광감응물질로 혼용한 경우 모두를 각각 또는 통칭하는 의미로 사용된다. The term "nano," as used herein, refers to a nanoscale ranging from 1 to 1,000 nm, and may optionally include microunits. In addition, the term "nanoparticles" described in the specification includes all types of particles having nanoscale. In the present specification, the term 'dyes' refers to all of light-sensitive materials in sunlight in a photoreactive solar cell such as a dye, which is a conventional organic compound in the conventional sense, and sometimes an inorganic quantum dot. Dye-sensitized solar cells' also use conventional 'dyes' as photosensitizers, solar cells using' Qdots' alone as photosensitizers, 'dye' and 'quantum dots' as photosensitizers Are used in the sense of collectively or collectively.
도 1은 본 발명에 따른 염료감응형 태양전지의 구조 및 그 내부에서 일어나는 광에너지의 전기에너지로의 변환과정을 설명하기 위한 모식도이다. 도 1과 같은 본 발명의 염료감응형 태양전지용 전해 조성물이 적용되는 염료감응형 태양전지의 구조는 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자라면 그 구체적 구조를 모두 잘 알고 있을 것이므로 본 명세서에서 전지 또는 전지 셀의 구조에 관한 더 이상의 상세한 설명은 하지 않기로 한다. FIG. 1 is a schematic diagram for explaining the structure of a dye-sensitized solar cell according to the present invention and the conversion process of light energy into electrical energy occurring therein. The structure of the dye-sensitized solar cell to which the electrolytic composition for a dye-sensitized solar cell of the present invention is applied, as shown in FIG. 1, will be well known to those skilled in the art. No further detailed description of the structure of the battery or the battery cell will be given.
한편, 본 발명에서 광전극은 통상적인 방법으로 형성될 수 있으며, 투명 전도성 전극 및 염료가 흡착되는 다공질막을 포함할 수 있다. 본 발명에서 상기 광전극은 통상적인 방법으로 형성될 수 있으며, 투명 전도성 전극 및 양자점 흡착 다공질막을 포함할 수 있다.Meanwhile, in the present invention, the photoelectrode may be formed by a conventional method, and may include a transparent conductive electrode and a porous film on which the dye is adsorbed. In the present invention, the photoelectrode may be formed by a conventional method, and may include a transparent conductive electrode and a quantum dot adsorption porous film.
상기 투명 전도성 전극 (TCO: transparent conducting oxide)은 FTO (F-doped SnO2: SnO2:F), ITO, 평균 두께가 1 내지 1000nm인 금속전극, 금속 질화물, 금속 산화물, 탄소화합물, 또는 전도성 고분자를 포함하는 전도성 필름일 수 있다. 상기 금속 질화물의 예로는 IVB족 금속원소의 질화물, VB족 금속원소의 질화물, VIB족 금속원소의 질화물, 질화알루미늄, 질화갈륨, 질화인듐, 질화실리콘, 질화게르마늄 및 이들의 혼합물로 이루어진 군으로부터 1종 이상 선택될 수 있다. 상기 금속산화물은 10 내지 100㎚의 나노입자일 수 있으며, 상기 금속산화물 나노입자는 주석(Sn)산화물, 안티몬(Sb), 나이오븀(Nb) 또는 불소 도핑된 주석(Sn)산화물, 인듐(In)산화물, 주석 도핑된 인듐(In)산화물, 아연(Zn)산화물, 알루미늄(Al), 붕소(B), 갈륨(Ga), 수소(H), 인듐(In), 이트륨(Y), 타이타늄(Ti), 실리콘(Si) 또는 주석(Sn) 도핑된 아연(Zn)산화물, 마그네슘(Mg)산화물, 캐드뮴(Cd)산화물, 마그네슘아연(MgZn)산화물, 인듐아연(InZn)산화물, 구리알루미늄(CuAl)산화물, 실버(Ag)산화물, 갈륨(Ga)산화물, 아연주석산화물(ZnSnO), 타이타늄산화물(TiO2) 및 아연인듐주석(ZIS)산화물, 니켈(Ni)산화물, 로듐(Rh)산화물, 루세늄(Ru)산화물, 이리듐(Ir)산화물, 구리(Cu)산화물, 코발트(Co)산화물, 텅스텐(W)산화물, 티타늄(Ti)산화물, 지르코늄(Zr)산화물, 스트론튬(Sr)산화물, 란타넘(La)산화물, 바나듐(V)산화물, 몰리브데넘(Mo)산화물, 나이오븀(Nb)산화물, 알루미늄(Al)산화물, 이트늄(Y)산화물, 스칸듐(Sc)산화물, 사마륨(Sm)산화물, 스트론튬타이타늄(SrTi)산화물로 이루어진 군으로부터 선택된 1종 이상을 사용할 수 있고, 바람직하게는 티타늄산화물을 사용한다. 상기 탄소화합물은 활성탄, 흑연, 카본 나노튜브, 카본블랙, 그라펜 또는 이들의 혼합물로 이루어진 군으로부터 1종 이상 선택될 수 있다. 상기 전도성 고분자는 PEDOT (폴리(3,4-에틸렌디옥시티오펜))- PSS(폴리(스티렌설포네이트)), 폴리아닐린-CSA, 펜타센, 폴리아세틸렌, P3HT(폴리(3-헥실티오펜), 폴리실록산 카르바졸, 폴리아닐린, 폴리에틸렌 옥사이드, (폴리(1-메톡시-4-(0-디스퍼스레드1)-2,5-페닐렌-비닐렌), 폴리인돌, 폴리카르바졸, 폴리피리디아진, 폴리이소티아나프탈렌, 폴리페닐렌 설파이드, 폴리비닐피리딘, 폴리티오펜, 폴리플루오렌, 폴리피리딘, 폴리피롤, 폴리설퍼나이트라이드, 및 이들의 공중합체로 이루어진 군으로부터 1종 이상 선택하여 사용할 수 있다.The transparent conductive electrode (TCO: transparent conducting oxide) is FTO (F-doped SnO 2: SnO 2: F), ITO, an average thickness of 1 to 1000nm is a metal electrode, metal nitrides, metal oxides, carbon compounds, or conductive polymer, And the like. Examples of the metal nitride include, but are not limited to, a group consisting of a nitride of Group IVB metal element, a nitride of Group VB metal element, a nitride of Group VIB element, aluminum nitride, gallium nitride, indium nitride, silicon nitride, germanium nitride, More than species can be selected. The metal oxide may be nanoparticles of 10 to 100 nm and the metal oxide nanoparticles may be selected from the group consisting of tin (Sn) oxide, antimony (Sb), niobium (Nb) or fluorine doped tin (Sn) ) Oxide, tin-doped indium oxide, zinc oxide, aluminum, boron, gallium, hydrogen, indium, yttrium, Ti), silicon (Si) or tin (Sn) doped zinc oxide, magnesium oxide, cadmium oxide, magnesium zinc oxide, indium zinc oxide, (Cu) oxide, silver (Ag) oxide, gallium (Ga) oxide, zinc tin oxide (ZnSnO), titanium oxide (TiO2) and zinc indium tin (ZIS) oxide, nickel (Ni) oxide, rhodium (Ru) oxide, iridium (Ir) oxide, copper (Cu) oxide, cobalt (Co) oxide, tungsten (W) oxide, titanium (Ti) oxide, zirconium (Zr) oxide, strontium (La) oxide, (V) oxide, molybdenum (Mo) oxide, niobium (Nb) oxide, aluminum (Al) oxide, yttrium oxide, scandium oxide, samarium oxide, strontium titanium ) Oxide, and titanium oxide is preferably used. The carbon compound may be selected from the group consisting of activated carbon, graphite, carbon nanotube, carbon black, graphene, and mixtures thereof. The conductive polymer may be selected from the group consisting of PEDOT (poly (3,4-ethylenedioxythiophene) -PSS (poly (styrene sulfonate)), polyaniline-CSA, pentacene, polyacetylene, P3HT Polysiloxane carbazole, polyaniline, polyethylene oxide, (poly (1-methoxy-4- (0 -dispersed 1) -2,5-phenylene-vinylene), polyindole, polycarbazole, , Polyisothianaphthalene, polyphenylene sulfide, polyvinyl pyridine, polythiophene, polyfluorene, polypyridine, polypyrrole, polysulfuron nitride, and copolymers thereof. .
상기 다공질막은 금속산화물 상기 투명전도성 전극상에 TiO2등을 이용하여 나노입자 필름을 형성한 것을 의미한다. 이때 상기 광전극에 형성된 다공질막의 두께도 특별히 한정되지 않으나, 바람직하게 1 내지 40 um일 수 있다. 상기 다공질막은 금속산화물 나노입자, 바인더 및 용매를 포함하는 페이스트와 감광성 염료를 이용하여 통상의 방법, 예를 들면 투명 전도성 전극 위에 금속산화물 나노입자, 바인더 및 용매를 포함하는 금속산화물 나노입자 페이스트를 일정 두께로 도포한 후, 450 내지 500 ℃의 온도에서 1 내지 2시간 동안 열처리하여 형성할 수 있다. 이후, 상기 다공질막 표면에 염료 및/또는 양자점을 흡착하는 단계를 수행함으로써, 광전극을 제조할 수 있다. 상기 다공질막은 특별히 제한되는 것은 아니며 공지의 금속산화물, 예를 들면 주석(Sn)산화물, 안티몬(Sb), 나이오븀(Nb) 또는 불소 도핑된 주석(Sn)산화물, 인듐(In)산화물, 주석 도핑된 인듐(In)산화물, 아연(Zn)산화물, 알루미늄(Al), 붕소(B), 갈륨(Ga), 수소(H), 인듐(In), 이트륨(Y), 타이타늄(Ti), 실리콘(Si) 또는 주석(Sn) 도핑된 아연(Zn)산화물, 마그네슘(Mg)산화물, 캐드뮴(Cd)산화물, 마그네슘아연(MgZn)산화물, 인듐아연(InZn)산화물, 구리알루미늄(CuAl)산화물, 실버(Ag)산화물, 갈륨(Ga)산화물, 아연주석산화물(ZnSnO), 타이타늄산화물(TiO2) 및 아연인듐주석(ZIS)산화물, 니켈(Ni)산화물, 로듐(Rh)산화물, 루세늄(Ru)산화물, 이리듐(Ir)산화물, 구리(Cu)산화물, 코발트(Co)산화물, 텅스텐(W)산화물, 티타늄(Ti)산화물, 지르코늄(Zr)산화물, 스트론튬(Sr)산화물, 란타넘(La)산화물, 바나듐(V)산화물, 몰리브데넘(Mo)산화물, 나이오븀(Nb)산화물, 알루미늄(Al)산화물, 이트늄(Y)산화물, 스칸듐(Sc)산화물, 사마륨(Sm)산화물, 스트론튬타이타늄(SrTi)산화물로 이루어진 군으로부터 선택된 1종 이상의 금속산화물 나노입자를 포함할 수 있다.The porous film means a metal oxide. The nanoparticle film is formed on the transparent conductive electrode using TiO 2 or the like. At this time, the thickness of the porous film formed on the photo electrode is not particularly limited, but may be preferably 1 to 40 탆. The porous film may be formed by a conventional method using a paste containing metal oxide nanoparticles, a binder and a solvent, and a photosensitive dye, for example, a metal oxide nanoparticle paste containing metal oxide nanoparticles, a binder and a solvent on a transparent conductive electrode And then heat-treated at a temperature of 450 to 500 ° C for 1 to 2 hours. Thereafter, the step of adsorbing the dye and / or the quantum dots on the surface of the porous film can be performed to manufacture the photoelectrode. The porous film is not particularly limited and may be a known metal oxide such as tin oxide, antimony (Sb), niobium (Nb) or fluorine doped tin (Sn) oxide, indium (In) (Al), boron (B), gallium (Ga), hydrogen (H), indium (In), yttrium (Y), titanium (Ti), silicon (Si) or tin (Sn) doped zinc oxide, magnesium oxide, cadmium oxide, magnesium zinc oxide, indium zinc oxide, copper aluminum oxide, silver (Ag) oxide, gallium (Ga) oxide, zinc tin oxide (ZnSnO), titanium oxide (TiO2) and zinc indium tin (ZIS) oxide, nickel oxide, rhodium oxide, ruthenium oxide (Ir) oxide, copper (Cu) oxide, cobalt (Co) oxide, tungsten (W) oxide, titanium (Ti) oxide, zirconium (Zr) oxide, strontium (Sr) oxide, lanthanum Vanadium (V ) Oxide, a molybdenum (Mo) oxide, a niobium (Nb) oxide, an aluminum (Al) oxide, an yttrium (Y) oxide, a scandium (Sc) oxide, a samarium (Sm) oxide and a strontium titanium And at least one metal oxide nanoparticle selected from the group consisting of metal oxide nanoparticles.
상기 광감응물질은 특별히 제한되는 것은 아니나, 양자점.; 가시광 영역인 500~600 nm의 파장 사이에 큐밴드(Q bands)를 가지고 있는 포피린(porpyrine) 염료, 스쿠알린(squarine) 염료 또는 루테늄계 염료인 것이 바람직하다. 특히, 상기 루테늄계 염료는 MLCT(metal to ligand charge transfer)밴드를 가지고 있기 때문에 UV파장이 약 530~610nm사이에서 높은 흡광도를 가지고 있기 때문에 광민감성 염료의 예로 더욱 바람직하다. 상기 루테늄계 염료는 N719, N3, Ru505 및 Z907로 이루어진 군으로부터 선택된 1종 이상이 바람직하다. 또한 상기 양자점은 CdS, CdSe, ZnS, PbS, PbSe, PbTe, SnS, SnSe, SnTe, Sb2S3, Sb2Se3, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, Si 및 Ge로 구성된 군으로부터 선택된 1종 이상일 수 있으며, 이 중 밴드갭 (Band Gap) 이 1.55 eV 내지 3.1 eV을 가져 가시광선을 흡수할 수 있는 양자점이 바람직하며, 예를 들면 metal chalcogenide 계열로 CdS, CdSe, CdTe, PbS, PbSe 및 이들의 복합체로 이루어진 군으로부터 선택된 1종 이상인 것이 바람직하다.The photosensitive material is not particularly limited, but may be a quantum dot. It is preferably a porpyrine dye, a squarine dye or a ruthenium dye having Q bands between wavelengths of 500 to 600 nm which is a visible light region. In particular, since the ruthenium-based dye has a MLCT (metal to ligand charge transfer) band, it is more preferable as an example of a photosensitive dye because the UV wavelength has a high absorbance at between about 530 and 610 nm. The ruthenium-based dye is preferably at least one selected from the group consisting of N719, N3, Ru505 and Z907. In addition, the quantum dots include at least one of CdS, CdSe, ZnS, PbS, PbSe, PbTe, SnS, SnSe, SnTe, Sb2S3, Sb2Se3, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, InP, InAs, Ge. Of these, quantum dots having a band gap of 1.55 eV to 3.1 eV and capable of absorbing visible light are preferable. For example, metal chalcogenide series include CdS, CdSe , CdTe, PbS, PbSe, and a complex thereof.
본 발명에 따른 상대 전극에 사용 가능한 전도성 투명기판으로는 투명 전도성 전극(TCO: transparent conducting oxide))이 형성될 수 있으며, 예를 들면 SnO2:F또는 ITO 등을 들 수 있으나, 이에 한정되는 것은 아니며, 이 분야에 잘 알려진 통상의 전도성 필름을 형성할 수 있다. 또한 전도성 전극은 FTO (F-doped SnO2:SnO2:F),ITO 또는 평균 두께가 1 내지 1000 nm인 금속전극, 금속 질화물, 금속 산화물, 탄소화합물 및 전도성 고분자로 구성된 군으로부터 선택된 1종 이상의 전도성 필름이 코팅될 수 있다. A transparent conductive electrode (TCO) may be formed on the conductive transparent substrate, for example, SnO 2 : F or ITO. However, , And can form ordinary conductive films well known in the art. Also, the conductive electrode may be at least one selected from the group consisting of FTO (F-doped SnO 2 : SnO 2 : F), ITO or metal electrode having an average thickness of 1 to 1000 nm, metal nitride, metal oxide, carbon compound, and conductive polymer A conductive film may be coated.
본 발명의 염료감응형 태양전지용 전해조성물은 각각 하기 화학식 1 및 2의 5-Methylthio-1,3,4-thiadiazole-2-thiol (MTD) 및 (MTD)2 2+의 산화환원쌍을 포함한다. 상기 (MTD)2 2+의 경우 MTD용액에 산화제를 첨가하여 제조할 수 있다. 상기 산화제는 특별히 제한되는 것은 아니며 본 발명의 실시예에서는 nitrosonium tetrafluoroborate (BF4NO)을 사용하였다. 상기 산화환원쌍은 제조시 비휘발성 유기용매에 용해하여 전해질로 사용할 수 있다. 상기 유기용매는 특별히 제한되는 것은 아니며 상기 산화환원쌍에 대하여 충분한 용해도를 보이는 고비점을 갖는 유기용매, 예를 들어, 디메틸술폭시드, 아세토나이트릴, 3-메톡시프로피오니트릴, 에틸렌카보네이트, 프로필렌카보네이트, 폴리에틸렌글리콜, 폴리프로필렌글리콜, 테트라하이드로퓨란 등과 이미다졸리윰, 피롤리디늄 등을 포함하는 상온 용융염 및 이들의 혼합물일 수 있다. The electrolytic composition for a dye-sensitized solar cell of the present invention comprises a redox pair of 5-Methylthio-1,3,4-thiadiazole-2-thiol (MTD) and (MTD) 2 2+ . In the case of (MTD) 2 2+ , it can be prepared by adding an oxidizing agent to the MTD solution. The oxidizing agent is not particularly limited, and nitrosonium tetrafluoroborate (BF 4 NO) is used in the embodiment of the present invention. The redox pair may be used as an electrolyte by dissolving in a nonvolatile organic solvent at the time of production. The organic solvent is not particularly limited, and an organic solvent having a high boiling point, which shows sufficient solubility to the redox pair, such as dimethylsulfoxide, acetonitrile, 3-methoxypropionitrile, ethylene carbonate, propylene Carbonate, polyethylene glycol, polypropylene glycol, tetrahydrofuran and the like, room temperature molten salts including imidazolium, pyrrolidinium, and the like, and mixtures thereof.
상대전극(counter electrode) 역시 공지의 염료감응형 태양전지의 상대전극을 사용할 수 있으며, 본 발명의 실시예에서는 상대전극을 이루는 부분을 형성하기 위해서 Pt 등을 이용한 나노입자금속필름을 이용하였다. 상대전극을 이루는 상기 나노입자금속으로는 백금(Pt), 활성탄(activated carbon), 흑연(graphite), 카본 나노튜브, 카본블랙, p-형 반도체, PEDOT (폴리(3,4-에틸렌디옥시티오펜))- PSS(폴리(스티렌설포네이트)), 폴리아닐린-CSA, 펜타센, 폴리아세틸렌, P3HT(폴리(3-헥실티오펜), 폴리실록산 카르바졸, 폴리아닐린, 폴리에틸렌 옥사이드, (폴리(1-메톡시-4-(0-디스퍼스레드1)-2,5-페닐렌-비닐렌), 폴리인돌, 폴리카르바졸, 폴리피리디아진, 폴리이소티아나프탈렌, 폴리페닐렌 설파이드, 폴리비닐피리딘, 폴리티오펜, 폴리플루오렌, 폴리피리딘, 폴리피롤, 폴리설퍼나이트라이드, 이들의 유도체 및 이들의 공중합체로 구성된 군으로부터 선택된 1종 이상인 것이 바람직하다.The counter electrode may also be a counter electrode of a known dye-sensitized solar cell. In an embodiment of the present invention, a nanoparticle metal film using Pt or the like is used to form a counter electrode. Examples of the nanoparticle metal forming the counter electrode include platinum (Pt), activated carbon, graphite, carbon nanotube, carbon black, p-type semiconductor, PEDOT (poly (3,4- ) -PSS (poly (styrenesulfonate)), polyaniline-CSA, pentacene, polyacetylene, P3HT (poly (3-hexylthiophene), polysiloxane carbazole, polyaniline, polyethylene oxide, Polyphenylenevinylene), poly (vinylidene fluoride), poly (vinylidene fluoride), poly (vinylidene fluoride), poly At least one member selected from the group consisting of thiophene, polyfluorene, polypyridine, polypyrrole, polysulfuronitrile, derivatives thereof, and copolymers thereof.
이하 실시예를 통해 본 발명을 보다 상세히 설명한다. 그러나 하기 실시예는 본 발명의 이해를 돕기 위한 예시적인 것으로서, 본 발명의 범위가 이에 한정되는 것은 아니다. Hereinafter, the present invention will be described in more detail with reference to examples. However, the following examples are provided for illustrative purposes only, and the scope of the present invention is not limited thereto.
[실시예 1][Example 1]
(MTD/(MTD)2 2+ 전해질의 제조)(Preparation of MTD / (MTD) 2 2+ electrolyte)
1 M MTD, 0.05 M nitrosonium tetrafluoroborate (BF4NO), 0.1M lithiumperchlorate (LiClO4), 1.2M 4-tert-butylpyridine (tBP)을 디메틸술폭시드/아세토나이트릴(1:10 v/v) 에 용해시켜 전해질을 제조한다.1 M MTD, 0.05 M nitrosonium tetrafluoroborate (BF 4 NO), 0.1 M lithium perchlorate (LiClO 4 ) and 1.2 M 4-tert-butylpyridine (tBP) dissolved in dimethylsulfoxide / acetonitrile (1:10 v / v) To prepare an electrolyte.
(광전극의 제조)(Fabrication of photoelectrode)
광전극용 기판으로서 전도성을 가지는 유리 기판 (Philkington 회사, 재질: FTO, 두께 2.2cm, 8Ω/sq)을 준비하였다. 이어서, 산화티타늄 나노입자(평균입경: 20 nm) 18.5 중량%, 바인더용 고분자(에틸셀룰로오스) 0.05 중량%, 및 잔량의 용매(Terpineol)를 포함하는 금속산화물 나노입자 페이스트를 상기 유리 기판 위에 도포(닥터블레이드[doctor blade]법 이용)한 후, 기판을 500 ℃에서 30 분간 열처리하여 금속산화물 나노입자를 포함하는 다공질막(두께: 4.5㎛)을 형성시켰다. 이어서, 산화티타늄 나노입자(평균입경: 400 nm) 18.5 중량%, 바인더용 고분자(에틸셀룰로오스) 0.05 중량%, 및 잔량의 용매(Terpineol)를 포함하는 금속산화물 나노입자 페이스트를 상기 유리 기판 위에 도포(닥터블레이드[doctor blade]법 이용)한 후, 기판을 500 ℃에서 30 분간 열처리하여 금속산화물 나노입자를 포함하는 다공질막(두께: 3㎛)을 형성시켰다. A glass substrate (Philkington Company, material: FTO, thickness: 2.2 cm, 8? / Sq) was prepared as the substrate for the photoelectrode. Subsequently, a metal oxide nanoparticle paste containing 18.5% by weight of titanium oxide nanoparticles (average particle diameter: 20 nm), 0.05% by weight of a binder polymer (ethyl cellulose), and a residual solvent (Terpineol) After using the doctor blade method, the substrate was heat-treated at 500 DEG C for 30 minutes to form a porous film (thickness: 4.5 mu m) containing metal oxide nanoparticles. Subsequently, a metal oxide nanoparticle paste containing 18.5% by weight of titanium oxide nanoparticles (average particle diameter: 400 nm), 0.05% by weight of a binder polymer (ethyl cellulose), and a residual solvent (Terpineol) After using the doctor blade method, the substrate was heat-treated at 500 DEG C for 30 minutes to form a porous film (thickness: 3 mu m) containing metal oxide nanoparticles.
이어서, 상기 기판을 양자점 염료 CdS/ZnS를 successive ionic layer absorption reaction (SILAR) 기술을 이용하여 감광성 양자점을 흡착시켜 광전극을 제조하였다.Next, the substrate was subjected to a successive ionic layer absorption reaction (SILAR) technique to adsorb the photosensitive quantum dots to the CdS / ZnS quantum dot dye to prepare a photoelectrode.
(상대전극의 제조)(Preparation of counter electrode)
불소가 도핑된 틴옥사이드 투명 전도성 산화물층이 형성된 투명 유리 기판을 상대전극용 기판으로서 준비하였다. 상기 기판의 투명 전도성 전극을 0.05 M 3,4-ethylenedioxythiophene monomer (EDOT)과 1 M KCl을 1N aqueous H2SO4용액에 용해 시켜 CV방법을 통해 (50 mV.s-1, 0~1.2V) PEDOT상대전극을 제조하였다.A transparent glass substrate on which a fluorine-doped tin oxide transparent conductive oxide layer was formed was prepared as a substrate for a counter electrode. The transparent conductive electrode of the substrate was prepared by dissolving 0.05
[실험예 1] [Experimental Example 1]
실시예 1에서 제조한 각각의 전해질을 이용한 염료감응 태양전지를 하기와 같은 방법으로 에너지 변환효율(energy conversion efficiency)을 측정하였으며, 그 결과를 하기 표 1에 나타내었다..The energy conversion efficiency of the dye-sensitized solar cell using each of the electrolytes prepared in Example 1 was measured in the following manner. The results are shown in Table 1 below.
(1) 에너지 변환효율(%) (1) Energy conversion efficiency (%)
: 에너지 변환효율의 측정은 1.5AM 100mW/cm2의 솔라 시뮬레이터(Xe 램프[Polaronix K201, McScience], AM1.5 filter, 및 power meter (Polaronix K101/LAB20, McScience, Korea)를 이용하였다.: The energy conversion efficiency was measured using a solar simulator (Polaronix K201, McScience, AM1.5 filter, and power meter (Polaronix K101 / LAB20, McScience, Korea) of 1.5 Am 100 mW / cm2.
CdS QD
CdS QD
상기 표 1을 참고하면, CdS QD를 사용하여 같은 상대전극을 사용한 경우 본 발명의 MTD/(MTD)2 2+ 전해질과 Polysulfide 기반 전해질을 비교한 경우 전류 및 전압의 값이 매우 높고 FF높아 특성이 좋은 것을 알 수 있다. 또한 본 발명의 MTD/(MTD)2 2+ 전해질의 경우 상대전극에 따라 전류와 전압의 차이가 큰 것을 알 수 있으며 상대전극의 최적의 조건이 필요한 것을 알 수 있다. 이는 전해질이 바뀌면서 기존 사용하던 상대전극의 조건도 바뀌어야 하는 것을 의미한다. 도 4에서 나타낸 것처럼 MTD/(MTD)2 2+ 전해질의 경우 문헌에 나온 산화 환원 준위를 조사한 결과 기존 황 기반 전해질에 비해 낮고 기존 요오드 기반 전해질과 거의 비슷한 산화 환원 준위를 가지고 있어 높은 전압을 기대할 수 있다.When MTD / (MTD) 2 2+ electrolyte of the present invention is compared with Polysulfide-based electrolyte using the same counter electrode using CdS QD, the current and voltage values are very high and FF is high, Good things can be found. In the case of the MTD / (MTD) 2 2+ electrolyte of the present invention, it can be seen that the difference between the current and the voltage is large depending on the counter electrode, and it is found that the optimum condition of the counter electrode is required. This means that the condition of the counter electrode that has been used previously must be changed as the electrolyte is changed. As shown in FIG. 4, in the case of the MTD / (MTD) 2 2+ electrolyte, the oxidation reduction level of the electrolyte is lower than that of the conventional sulfur-based electrolyte and has a similar redox level to that of the existing iodine-based electrolyte. have.
앞에서 설명된 본 발명의 일실시예는 본 발명의 기술적 사상을 한정하는 것으로 해석되어서는 안 된다. 본 발명의 보호범위는 청구범위에 기재된 사항에 의하여만 제한되고, 본 발명의 기술분야에서 통상의 지식을 가진 자는 본 발명의 기술적 사상을 다양한 형태로 개량 변경하는 것이 가능하다. 따라서 이러한 개량 및 변경은 통상의 지식을 가진 자에게 자명한 것인 한 본 발명의 보호범위에 속하게 될 것이다.The embodiments of the present invention described above should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.
Claims (16)
상기 전해조성물은 각각 하기 화학식 1의 5-메틸티오-1,3,4-티아디아졸-2-티올(5-Methylthio-1,3,4-thiadiazole-2-thiol, MTD) 및 화학식 2의 5-메틸티오-1,3,4-티아디아졸 디설파이드 양이온(5-Methylthio-1,3,4-thiadiazole disulfide cation,(MTD)2 2+)로 이루어진 산화환원쌍을 포함한 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물.
[화학식 1]
[화학식 2]
The electrolytic composition comprises 5-methylthio-1,3,4-thiadiazole-2-thiol (MTD) represented by the following formula (1) A redox pair consisting of 5-methylthio-1,3,4-thiadiazole disulfide cation (5-Methylthio-1,3,4-thiadiazole disulfide cation, (MTD) 2 2+ ) Electrolytic composition for sensitive solar cell.
[Chemical Formula 1]
(2)
상기 다공질막은 주석(Sn)산화물, 안티몬(Sb), 나이오븀(Nb) 또는 불소 도핑된 주석(Sn)산화물, 인듐(In)산화물, 주석 도핑된 인듐(In)산화물, 아연(Zn)산화물, 알루미늄(Al), 붕소(B), 갈륨(Ga), 수소(H), 인듐(In), 이트륨(Y), 타이타늄(Ti), 실리콘(Si) 또는 주석(Sn) 도핑된 아연(Zn)산화물, 마그네슘(Mg)산화물, 캐드뮴(Cd)산화물, 마그네슘아연(MgZn)산화물, 인듐아연(InZn)산화물, 구리알루미늄(CuAl)산화물, 실버(Ag)산화물, 갈륨(Ga)산화물, 아연주석산화물(ZnSnO), 타이타늄산화물(TiO2), 아연인듐주석(ZIS)산화물, 니켈(Ni)산화물, 로듐(Rh)산화물, 루세늄(Ru)산화물, 이리듐(Ir)산화물, 구리(Cu)산화물, 코발트(Co)산화물, 텅스텐(W)산화물, 티타늄(Ti)산화물, 지르코늄(Zr)산화물, 스트론튬(Sr)산화물, 란타넘(La)산화물, 바나듐(V)산화물, 몰리브데넘(Mo)산화물, 나이오븀(Nb)산화물, 알루미늄(Al)산화물, 이트늄(Y)산화물, 스칸듐(Sc)산화물, 사마륨(Sm)산화물 및 스트론튬타이타늄(SrTi)산화물로 이루어진 군으로부터 선택된 1종 이상의 금속산화물로 된 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물.The method according to claim 1,
The porous film may include at least one selected from the group consisting of Sn oxide, antimony (Sb), niobium (Nb) or fluorine doped Sn oxide, indium oxide, tin- (Al), boron (B), gallium (Ga), hydrogen (H), indium (In), yttrium (Y), titanium (Ti), silicon (Si) or tin (Mg) oxide, indium zinc (InZn) oxide, copper aluminum (CuAl) oxide, silver (Ag) oxide, gallium (Ga) oxide, zinc tin oxide, magnesium oxide, cadmium oxide, magnesium zinc A metal oxide such as an oxide (ZnSnO), a titanium oxide (TiO2), a zinc indium tin (ZIS) oxide, a nickel oxide, a rhodium oxide, a ruthenium oxide, an iridium oxide, A cobalt oxide, a tungsten oxide, a titanium oxide, a zirconium oxide, a strontium oxide, a lanthanum oxide, a vanadium oxide, a molybdenum oxide, , Niobium (Nb) oxide, aluminum (Al Characterized in that it is made of at least one metal oxide selected from the group consisting of oxides, yttrium (Y) oxides, scandium (Sc) oxides, samarium (Sm) oxides and strontium titanium (SrTi) oxides. Composition.
상기 염료는 양자점; 또는 500~600 nm사이에 큐-밴드(Q-bands)를 가지고 있는 물질인 포피린(porpyrine) 염료, 스쿠알린(squarine) 염료 또는 N719, N3, Ru505 및 Z907로 이루어진 군으로부터 선택된 1종 이상인 루테늄계 염료인 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물.The method according to claim 1,
The dye may be a quantum dot; Or porphyrine dyes, squarine dyes, materials having Q-bands between 500 and 600 nm, or ruthenium-based dyes of at least one selected from the group consisting of N719, N3, Ru505 and Z907 Wherein the dye-sensitized solar cell is a dye-sensitized solar cell.
상기 양자점은 CdS, CdSe, ZnS, PbS, PbSe, PbTe, SnS, SnSe, SnTe, Sb2S3, Sb2Se3, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, Si 및 Ge로 구성된 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물.The method of claim 3,
The quantum dots include at least one of CdS, CdSe, ZnS, PbS, PbSe, PbTe, SnS, SnSe, SnTe, Sb2S3, Sb2Se3, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, InP, InAs, And at least one member selected from the group consisting of an alkali metal salt and a metal salt.
상기 양자점은 밴드갭 (Band Gap) 이 1.55 eV 내지 3.1 eV 범위인 것을 특징으로 하는 염료감응형 태양전지용 전해 조성물.5. The method of claim 4,
Wherein the quantum dot has a band gap in a range of 1.55 eV to 3.1 eV.
상기 윈도우의 일면상에 형성되고 투명전도성전극 및 염료가 흡착된 다공질막을 포함한 광전극과;
상기 광전극과 이격되어 설치된 상대전극;
및 상기 광전극과 상대전극 사이에 충진되며 각각 하기 화학식 1의 5-메틸티오-1,3,4-티아디아졸-2-티올(5-Methylthio-1,3,4-thiadiazole-2-thiol, MTD) 및 화학식 2의 5-메틸티오-1,3,4-티아디아졸 디설파이드 양이온(5-Methylthio-1,3,4-thiadiazole disulfide cation,(MTD)2 2+)로 이루어진 산화환원쌍을 포함한 전해 조성물을 포함한 염료감응형 태양전지.
[화학식 1]
[화학식 2]
A photoelectrode formed on one side of the window and including a transparent conductive electrode and a porous film on which the dye is adsorbed;
A counter electrode spaced apart from the photoelectrode;
And 5-Methylthio-1,3,4-thiadiazole-2-thiol (hereinafter referred to as " 5-methylthio- , MTD) and a redox pair consisting of 5-methylthio-1,3,4-thiadiazole disulfide cation (MTD) 2 2+ of formula ( 2 ) A dye-sensitized solar cell comprising an electrolytic composition comprising:
[Chemical Formula 1]
(2)
상기 다공질막은 주석(Sn)산화물, 안티몬(Sb), 나이오븀(Nb) 또는 불소 도핑된 주석(Sn)산화물, 인듐(In)산화물, 주석 도핑된 인듐(In)산화물, 아연(Zn)산화물, 알루미늄(Al), 붕소(B), 갈륨(Ga), 수소(H), 인듐(In), 이트륨(Y), 타이타늄(Ti), 실리콘(Si) 또는 주석(Sn) 도핑된 아연(Zn)산화물, 마그네슘(Mg)산화물, 캐드뮴(Cd)산화물, 마그네슘아연(MgZn)산화물, 인듐아연(InZn)산화물, 구리알루미늄(CuAl)산화물, 실버(Ag)산화물, 갈륨(Ga)산화물, 아연주석산화물(ZnSnO), 타이타늄산화물(TiO2), 아연인듐주석(ZIS)산화물, 니켈(Ni)산화물, 로듐(Rh)산화물, 루세늄(Ru)산화물, 이리듐(Ir)산화물, 구리(Cu)산화물, 코발트(Co)산화물, 텅스텐(W)산화물, 티타늄(Ti)산화물, 지르코늄(Zr)산화물, 스트론튬(Sr)산화물, 란타넘(La)산화물, 바나듐(V)산화물, 몰리브데넘(Mo)산화물, 나이오븀(Nb)산화물, 알루미늄(Al)산화물, 이트늄(Y)산화물, 스칸듐(Sc)산화물, 사마륨(Sm)산화물 및 스트론튬타이타늄(SrTi)산화물로 이루어진 군으로부터 선택된 1종 이상의 금속산화물로 된 것을 특징으로 하는 염료감응형 태양전지.The method according to claim 6,
The porous film may include at least one selected from the group consisting of Sn oxide, antimony (Sb), niobium (Nb) or fluorine doped Sn oxide, indium oxide, tin- (Al), boron (B), gallium (Ga), hydrogen (H), indium (In), yttrium (Y), titanium (Ti), silicon (Si) or tin (Mg) oxide, indium zinc (InZn) oxide, copper aluminum (CuAl) oxide, silver (Ag) oxide, gallium (Ga) oxide, zinc tin oxide, magnesium oxide, cadmium oxide, magnesium zinc A metal oxide such as an oxide (ZnSnO), a titanium oxide (TiO2), a zinc indium tin (ZIS) oxide, a nickel oxide, a rhodium oxide, a ruthenium oxide, an iridium oxide, A cobalt oxide, a tungsten oxide, a titanium oxide, a zirconium oxide, a strontium oxide, a lanthanum oxide, a vanadium oxide, a molybdenum oxide, , Niobium (Nb) oxide, aluminum (Al Wherein the metal oxide is at least one metal oxide selected from the group consisting of oxides, yttrium (Y) oxides, scandium (Sc) oxides, samarium (Sm) oxides and strontium titanium (SrTi) oxides.
상기 염료는 양자점; 또는 500~600 nm사이에 큐-밴드(Q-bands)를 가지고 있는 물질인 포피린(porpyrine) 염료, 스쿠알린(squarine) 염료 또는 N719, N3, Ru505 및 Z907로 이루어진 군으로부터 선택된 1종 이상인 루테늄계 염료인 것을 특징으로 하는 염료감응형 태양전지.The method according to claim 6,
The dye may be a quantum dot; Or porphyrine dyes, squarine dyes, materials having Q-bands between 500 and 600 nm, or ruthenium-based dyes of at least one selected from the group consisting of N719, N3, Ru505 and Z907 Wherein the dye-sensitized solar cell is a dye.
상기 양자점은 CdS, CdSe, ZnS, PbS, PbSe, PbTe, SnS, SnSe, SnTe, Sb2S3, Sb2Se3, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, Si 및 Ge로 구성된 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지.9. The method of claim 8,
The quantum dots include at least one of CdS, CdSe, ZnS, PbS, PbSe, PbTe, SnS, SnSe, SnTe, Sb2S3, Sb2Se3, AlN, AlP, AlAs, GaN, GaP, GaAs, GaSb, InN, InP, InAs, Wherein the dye-sensitized solar cell is at least one selected from the group consisting of a dye-sensitized solar cell and a dye-sensitized solar cell.
상기 양자점은 밴드갭 (Band Gap) 이 1.55 eV 내지 3.1 eV 범위인 것을 특징으로 하는 염료감응형 태양전지.10. The method of claim 9,
Wherein the quantum dot has a band gap of 1.55 eV to 3.1 eV.
상기 투명전도성전극은 FTO (F-doped SnO2:SnO2:F), ITO, 평균 두께가 1 내지 1,000 nm인 금속, 금속 질화물, 금속 산화물, 탄소화합물 또는 전도성 고분자를 포함하는 전도성 필름인 것을 특징으로 하는 염료감응형 태양전지.The method according to claim 6,
The transparent conductive electrode is a conductive film comprising FTO (F-doped SnO 2 : SnO 2 : F), ITO, a metal having an average thickness of 1 to 1,000 nm, a metal nitride, a metal oxide, a carbon compound or a conductive polymer And a dye-sensitized solar cell.
상기 금속 질화물은 IVB족 금속원소의 질화물, VB족 금속원소의 질화물, VIB족 금속원소의 질화물, 질화알루미늄, 질화갈륨, 질화인듐, 질화실리콘 및 질화게르마늄으로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지.12. The method of claim 11,
Wherein the metal nitride is at least one selected from the group consisting of a nitride of a Group IVB metal element, a nitride of a Group VB metal element, a nitride of a Group VIB metal element, aluminum nitride, gallium nitride, indium nitride, silicon nitride and germanium nitride Dye-sensitized solar cell.
상기 금속 산화물은 주석(Sn)산화물, 안티몬(Sb), 나이오븀(Nb), 불소 도핑된 주석(Sn)산화물, 인듐(In)산화물, 주석 도핑된 인듐(In)산화물, 아연(Zn)산화물, 알루미늄(Al), 붕소(B), 갈륨(Ga), 수소(H), 인듐(In), 이트륨(Y), 타이타늄(Ti), 실리콘(Si) 또는 주석(Sn) 도핑된 아연(Zn)산화물, 마그네슘(Mg)산화물, 캐드뮴(Cd)산화물, 마그네슘아연(MgZn)산화물, 인듐아연(InZn)산화물, 구리알루미늄(CuAl)산화물, 실버(Ag)산화물, 갈륨(Ga)산화물, 아연주석산화물(ZNSNO), 타이타늄산화물(TiO2), 아연인듐주석(ZIS)산화물, 니켈(Ni)산화물, 로듐(Rh)산화물, 루세늄(Ru)산화물, 이리듐(Ir)산화물, 구리(Cu)산화물, 코발트(Co)산화물, 텅스텐(W)산화물 및 티타늄(Ti)산화물로 구성된 군으로부터 선택된 1종이상인 것을 특징으로 하는 염료감응형 태양전지.12. The method of claim 11,
The metal oxide may be at least one selected from the group consisting of tin (Sn) oxide, antimony (Sb), niobium (Nb), fluorine doped tin oxide, indium oxide, tin doped indium oxide, (Al), boron (B), gallium (Ga), hydrogen (H), indium (In), yttrium (Y), titanium (Ti), silicon (Si) or tin ) Oxide, magnesium oxide, cadmium oxide, magnesium zinc oxide, indium zinc oxide, copper aluminum oxide, silver oxide, gallium oxide, zinc oxide, Tin oxide (ZNSNO), titanium oxide (TiO2), zinc indium tin (ZIS) oxide, nickel oxide, rhodium oxide, ruthenium oxide, iridium oxide, copper oxide , Cobalt (Co) oxide, tungsten (W) oxide, and titanium (Ti) oxide.
상기 탄소화합물은 활성탄, 흑연, 카본 나노튜브, 카본블랙, 그라펜 또는 이들의 혼합물로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지.12. The method of claim 11,
Wherein the carbon compound is at least one selected from the group consisting of activated carbon, graphite, carbon nanotube, carbon black, graphene, and mixtures thereof.
상기 전도성 고분자는 PEDOT (폴리(3,4-에틸렌디옥시티오펜))-PSS(폴리(스티렌설포네이트)), 폴리아닐린-CSA, 펜타센, 폴리아세틸렌, P3HT(폴리(3-헥실티오펜), 폴리실록산 카르바졸, 폴리아닐린, 폴리에틸렌 옥사이드, (폴리(1-메톡시-4-(0-디스퍼스레드1)-2,5-페닐렌-비닐렌), 폴리인돌, 폴리카르바졸, 폴리피리디아진, 폴리이소티아나프탈렌, 폴리페닐렌 설파이드, 폴리비닐피리딘, 폴리티오펜, 폴리플루오렌, 폴리피리딘, 폴리피롤, 폴리설퍼나이트라이드 및 이들의 공중합체로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 염료감응형 태양전지.12. The method of claim 11,
The conductive polymer may be selected from the group consisting of PEDOT (poly (3,4-ethylenedioxythiophene) -PSS (poly (styrene sulfonate)), polyaniline-CSA, pentacene, polyacetylene, P3HT Polysiloxane carbazole, polyaniline, polyethylene oxide, (poly (1-methoxy-4- (0 -dispersed 1) -2,5-phenylene-vinylene), polyindole, polycarbazole, Wherein the dye is at least one selected from the group consisting of polyimide, polyimide, polyimide, polyimide, polyimide, polyimide, polyimide, polyimide, polyimide, polyimide, Sensitive solar cell.
상기 상대전극은 백금(Pt), 활성탄(activated carbon), 흑연(graphite), 카본 나노튜브, 카본블랙, p-형 반도체, PEDOT (폴리(3,4-에틸렌디옥시티오펜))- PSS(폴리(스티렌설포네이트)), 폴리아닐린-CSA, 펜타센, 폴리아세틸렌, P3HT(폴리(3-헥실티오펜), 폴리실록산 카르바졸, 폴리아닐린, 폴리에틸렌 옥사이드, (폴리(1-메톡시-4-(0-디스퍼스레드1)-2,5-페닐렌-비닐렌), 폴리인돌, 폴리카르바졸, 폴리피리디아진, 폴리이소티아나프탈렌, 폴리페닐렌 설파이드, 폴리비닐피리딘, 폴리티오펜, 폴리플루오렌, 폴리피리딘, 폴리피롤, 폴리설퍼나이트라이드, 이들의 유도체 및 이들의 공중합체로 구성된 군으로부터 선택된 1종 이상인 재질로 이루어진 필름을 기재에 형성한 것을 특징으로 하는 염료감응형 태양전지.
The method according to claim 6,
The counter electrode may be formed of one selected from the group consisting of Pt, activated carbon, graphite, carbon nanotube, carbon black, p-type semiconductor, PEDOT (poly (3,4-ethylenedioxythiophene) (Poly (3-hexylthiophene), polysiloxane carbazole, polyaniline, polyethylene oxide, (poly (1-methoxy- Dispersion Red 1) -2,5-phenylene-vinylene), polyindole, polycarbazole, polypyridazine, polyisothianaphthalene, polyphenylene sulfide, polyvinylpyridine, polythiophene, polyfluorene , Polypyridine, polypyrrole, polysulfuronitrile, derivatives thereof, and copolymers thereof. The dye-sensitized solar cell according to claim 1, wherein the film is formed of a material selected from the group consisting of polypyridine, polypyrrole, polysulfone nitride, derivatives thereof and copolymers thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160150823A KR101978022B1 (en) | 2016-11-14 | 2016-11-14 | Electrolyte composition for dye-sensitized solar cell and dye-sensitized solar cell comprising said electrolyte composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160150823A KR101978022B1 (en) | 2016-11-14 | 2016-11-14 | Electrolyte composition for dye-sensitized solar cell and dye-sensitized solar cell comprising said electrolyte composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180053813A true KR20180053813A (en) | 2018-05-24 |
| KR101978022B1 KR101978022B1 (en) | 2019-05-13 |
Family
ID=62299162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160150823A KR101978022B1 (en) | 2016-11-14 | 2016-11-14 | Electrolyte composition for dye-sensitized solar cell and dye-sensitized solar cell comprising said electrolyte composition |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101978022B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200021751A (en) * | 2018-08-21 | 2020-03-02 | 포항공과대학교 산학협력단 | Ice-templated two-dimensional PEDOT:PSS films and their coupling to photosensitizers for photoelectrochemical applications |
| WO2023048350A1 (en) * | 2021-09-27 | 2023-03-30 | 동국대학교 산학협력단 | Lighting diffuser plate for collecting and recycling light energy, and lighting apparatus system comprising same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120040666A (en) | 2010-10-19 | 2012-04-27 | 주식회사 동진쎄미켐 | Dye-sensitized solar cell having high efficiency and method for preparing the same |
| WO2012140251A1 (en) * | 2011-04-14 | 2012-10-18 | Compagnie Generale Des Etablissements Michelin | Rubber composition comprising a thiadiazole derivative |
| KR101429759B1 (en) | 2013-10-02 | 2014-08-14 | 건국대학교 산학협력단 | Electrolyte composition comprising energy relay dyes for dye-sensitized solar cell and dye-sensitized solar cell comprising said electrolyte composition |
| KR20160029029A (en) * | 2013-07-02 | 2016-03-14 | 시코쿠가세이고교가부시키가이샤 | Azole silane compound, surface treatment solution, surface treatment method, and use thereof |
-
2016
- 2016-11-14 KR KR1020160150823A patent/KR101978022B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120040666A (en) | 2010-10-19 | 2012-04-27 | 주식회사 동진쎄미켐 | Dye-sensitized solar cell having high efficiency and method for preparing the same |
| WO2012140251A1 (en) * | 2011-04-14 | 2012-10-18 | Compagnie Generale Des Etablissements Michelin | Rubber composition comprising a thiadiazole derivative |
| KR20160029029A (en) * | 2013-07-02 | 2016-03-14 | 시코쿠가세이고교가부시키가이샤 | Azole silane compound, surface treatment solution, surface treatment method, and use thereof |
| KR101429759B1 (en) | 2013-10-02 | 2014-08-14 | 건국대학교 산학협력단 | Electrolyte composition comprising energy relay dyes for dye-sensitized solar cell and dye-sensitized solar cell comprising said electrolyte composition |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200021751A (en) * | 2018-08-21 | 2020-03-02 | 포항공과대학교 산학협력단 | Ice-templated two-dimensional PEDOT:PSS films and their coupling to photosensitizers for photoelectrochemical applications |
| WO2023048350A1 (en) * | 2021-09-27 | 2023-03-30 | 동국대학교 산학협력단 | Lighting diffuser plate for collecting and recycling light energy, and lighting apparatus system comprising same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101978022B1 (en) | 2019-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sharma et al. | Dye-sensitized solar cells: fundamentals and current status | |
| Yeoh et al. | Recent advances in photo‐anode for dye‐sensitized solar cells: a review | |
| Mozaffari et al. | An overview of the Challenges in the commercialization of dye sensitized solar cells | |
| Ye et al. | Recent advances in quantum dot-sensitized solar cells: insights into photoanodes, sensitizers, electrolytes and counter electrodes | |
| EP2880698B9 (en) | Organo metal halide perovskite heterojunction solar cell and fabrication thereof | |
| Ye et al. | Recent advances in dye-sensitized solar cells: from photoanodes, sensitizers and electrolytes to counter electrodes | |
| Upadhyaya et al. | Recent progress and the status of dye-sensitised solar cell (DSSC) technology with state-of-the-art conversion efficiencies | |
| Nogueira et al. | Polymers in dye sensitized solar cells: overview and perspectives | |
| EP2259377B1 (en) | Solar cell | |
| Sharifi et al. | Recent Developments in Dye‐Sensitized Solar Cells | |
| Chen et al. | Dextran based highly conductive hydrogel polysulfide electrolyte for efficient quasi-solid-state quantum dot-sensitized solar cells | |
| US20100294350A1 (en) | Photo-electrode comprising conductive non-metal film, and dye-sensitized solar cell comprising the same | |
| KR20160004389A (en) | Organic-Inorganic Perovskite Based Solar Cell | |
| Peter et al. | Enhancing the power conversion efficiency of SrTiO3/CdS/Bi2S3quantum dot based solar cell using phosphor | |
| CN105830243A (en) | Dye-sensitized solar cell | |
| Kabir et al. | Instability of dye-sensitized solar cells using natural dyes and approaches to improving stability–an overview | |
| Alavi et al. | Improvement of power conversion efficiency of quantum dot-sensitized solar cells by doping of manganese into a ZnS passivation layer and cosensitization of zinc-porphyrin on a modified graphene oxide/nitrogen-doped TiO2 photoanode | |
| Yue et al. | CdTe quantum dots-sensitized solar cells featuring PCBM/P3HT as hole transport material and assistant sensitizer provide 3.40% efficiency | |
| KR101794988B1 (en) | Preparation method of perovskite absorber layer and preparation method of solarcell applied thereby | |
| KR101978022B1 (en) | Electrolyte composition for dye-sensitized solar cell and dye-sensitized solar cell comprising said electrolyte composition | |
| Singh et al. | State-of-the-Art of Dye-Sensitized Solar Cells | |
| JP2009289572A (en) | Photoelectric conversion element having nano structure hollow carbon material | |
| KR102014645B1 (en) | Novel orgaic-inorganic hybrid photoactive material, solar cell using said photoactive material and fabrication method thereof | |
| Ahmad | An affordable green energy source—Evolving through current developments of organic, dye sensitized, and perovskite solar cells | |
| Agasti et al. | Dye-Sensitized Solar Cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |