KR20180036694A - Method and apparatus for thin film deposition - Google Patents

Abstract

A thin film deposition method and apparatus are described in accordance with some embodiments of the present disclosure. In some embodiments, thin film deposition is performed in a plurality of stations, wherein each station provides a different reactant or combination of reactants. The station may be gas isolated from one another to minimize or prevent undesirable chemical vapor deposition (CVD) and / or atomic layer deposition (ALD) reactions between different reactants or combinations of reactants.

Description

Method and apparatus for thin film deposition

Cross reference of related application

This application is related to U.S. Patent Application No. 14 / 811,370 entitled "Methods for Thin Film Deposition", filed on July 28, 2015, and "Apparatuses for Thin Film Deposition" filed on July 28, PCT Rule 4.10 to U.S. Patent Application No. 14 / 811,528, entitled " This application is also related to U.S. Patent Application Serial No. 14 / 811,435 entitled " Methods and Apparatuses for Temperature-Indexed Thin Film Deposition ", filed on July 28, 2015, (Refer to Attorney ASMINT.134WO). Each of the listed applications is incorporated herein by reference in its entirety.

Technical field

Some embodiments of the present disclosure are directed to methods and apparatus for depositing thin films using semiconductor fabrication and atomic layer deposition. The thin film may be deposited on the surface of the substrate using two or more stations each providing a different reactant and in a gas isolated state from each other.

Integrated circuits are typically fabricated by a sophisticated process in which a variety of material layers are sequentially fabricated on a semiconductor substrate in a predetermined arrangement.

In some aspects, a method is provided for selective atomic layer deposition (ALD) of thin films. The method may include providing a first substrate comprising a first exposed surface and a second exposed surface different from the first exposed surface. The method may include (a) placing a first substrate on a first station. (B) contacting a first substrate in a first station with a first reactant while there is substantially no second reactant and the first station is in a gas isolated state with the second station, wherein the first reactant May preferentially react with the first exposed surface with respect to the second exposed surface such that only a single layer of the first reactant is adsorbed onto the first exposed surface. The method may include (c) placing the first substrate in the second station after contacting the first substrate in the first station with the first reactant. (D) contacting a first substrate in a second station with a second reactant while there is substantially no first reactant and the second station is in a gas isolated state with the first station, Reacting with only one single layer of the first reactant on the first exposed surface, which is different from the first reactant. The method may include repeating steps (a) through (d) until the first film of desired thickness is selectively deposited on the first exposed surface with respect to the second exposed surface. In some embodiments, the range between any two listed values, such as 1 nm to 100 nm, 1 nm to 20 nm, 1 nm to 10 nm, 1 nm to 5 nm, 2 nm to 100 nm, 2 nm to 20 nm nm, 5 nm - 10 nm, 10 nm - 100 nm, or 10 nm - 20 nm in the range of 2 nm to 10 nm, 2 nm to 5 nm, 3 to 4 nm, 5 nm to 100 nm, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 15, 20, 25, 30, 35, 40, 45, 50, 60, 70, A film of 80, 90, or 100 nm is deposited. In some embodiments, the first station does not provide other reactants other than the first reactant, and the second station does not provide any reactants other than the second reactant. In some embodiments, each surface of the first station is substantially free of the second reactant throughout the process, and each surface of the second station is substantially free of the first reactant throughout the process. In some embodiments, the first substrate is in the first station while the first station is in a gas isolated state with the second station. In some embodiments, the first station is in a gas isolated state with the second station before being placed in the first station of the first substrate. In some embodiments, the method further comprises purging the first station while the first substrate is in contact therewith after contacting the first substrate with the first reactant, and purging the first substrate after contacting the first substrate with the first reactant, Further comprising purging the second station while the substrate is in it. In some embodiments, a chemical vapor deposition (CVD) reaction does not substantially occur on any surface of the first station, and a CVD reaction does not substantially occur on any surface of the second station. In some embodiments, after contacting the first substrate in the first station with the first reactant, the substrate is disposed in the second station without being disposed in the intermediate position. In some embodiments, the method includes placing a first substrate in a purge position before contacting a first substrate in a first station with a first reactant and then contacting a first substrate in a second station with a second reactant, and Wherein the first substrate is in a purge position while an inert gas is being introduced into the purge position, the purge position being not in a gas communication with the first station and in a gas communication state with the second station during purging . In some embodiments, the method further comprises providing a second substrate comprising a third exposed surface and a fourth exposed surface different from the third exposed surface, within the first station, while the first substrate is not present within the first station And contacting the second substrate in the first station with a first reactant in the substantially absence of the second reactant, wherein the first reactant reacts with the third exposed surface, but reacts with the fourth exposed surface So that only a single layer of the first reactant is adsorbed on the third exposed surface and after contacting the second substrate in the first station with the first reactant and after the first substrate in the second station is removed After contacting the reactants, a second substrate, substantially free of the first reactant, is disposed in the second station and a first substrate substantially free of second reactants is disposed within the first station, The method further comprises swapping. In some embodiments, the cycle of steps (a) - (d) includes: (e) placing a first substrate at a third station; and (f) Wherein the third station is in gas isolation from the first station and the second station while in contact with the third reactant in a substantially absence state, wherein steps (e) through (f) (a) through (d) in combination with steps (e) through (f) may be performed before or after step d), wherein the first film of desired thickness is applied to the first exposed surface Lt; / RTI > In some embodiments, the method further comprises: during a repeat of steps (a) - (d), transferring a third substrate comprising a fifth exposed surface and a sixth exposed surface different from the fifth exposed surface to a third station Contacting a third substrate in a third station with a first reactant in a substantially absence of a second reactant, wherein the third station is in a gas isolated condition with the first station and the second station , The first reactant reacts with the fifth exposed surface but does not react with the sixth exposed surface so that only a single layer of the first reactant is adsorbed onto the fifth exposed surface, Placing a third substrate in a fourth station after contacting the substrate with a first reactant, wherein the fourth station is gas isolated from the first station, the second station, and the third station; Third in Station Contacting the substrate with a second reactant in the substantially absence of the first reactant, wherein the second reactant reacts with only one single layer of the first reactant on the fifth exposed surface, Contacting the third substrate in the third station with the first reactant in the substantially absence of the second reactant until the film is selectively deposited on the fifth surface other than the sixth surface, And repeating the step of contacting the second reactant in the substantially absence of the first reactant. In some embodiments, at least one solid material provides gas isolation between the first and second stations. In some embodiments, the gas provides gas isolation between the first and second stations. In some embodiments, the first station is in a fixed position relative to the second station. In some embodiments, disposing the first substrate at the second station includes disposing the first substrate in the second station by rotating the substrate holder holding the first substrate. In some embodiments, the spider places the first substrate in the first station and the first substrate in the second station. In some embodiments, after the spider has placed the first substrate at each station, the spider retracts from the station so that the spider is not in contact with any reactants. In some embodiments, the first substrate is disposed in the substrate holder in the first station, and the step of disposing the first substrate in the second station is performed without movement of the substrate holder. In some embodiments, each station provides only a single reactant. In some embodiments, the first reactant does not enter the first station simultaneously with the second reactant entering the second station. In some embodiments, the first substrate is exposed to reactants in the first station at a different pressure than the first substrate is exposed to the second reactant at the second station. In some embodiments, the first film is not deposited on the second exposed surface. In some embodiments, the method is a second selective ALD process for selectively depositing a second film on a second surface of a first substrate relative to a first surface of a first substrate, wherein the second film is different from the first film Process.

In some aspects, an atomic layer deposition (ALD) reactor is provided. The reactor may comprise a first station and a second station. The first station comprises a first substrate and the first substrate is in contact with the first reactant in a gas isolated state with the second station such that only one single layer of the first reactant is adsorbed onto the first substrate . The second station comprises a first substrate and the first substrate is in contact with the second reactant in a state of gas isolation from the first station and substantially free of the first reactant wherein the second reactant is different from the first reactant And react only with one single layer of the first reactant on the first substrate to form the desired material. Wherein the reactor is configured to position the first substrate in the second station after contacting the first substrate with the first reactant and to place the first substrate in the first station after contacting the first substrate with the second reactant, . ≪ / RTI > The reactor may comprise an intermediate space outside the first station and the second station, configured to receive the transfer system. The reactor is configured to move the substrate through the transfer system to the first station, move the transfer system to the intermediate space, direct the first substrate to contact the first reactant, To move to the station, to move the transfer system to the intermediate space, and to control the cycle of indicating the second station to contact the first substrate with the second reactant, wherein the film of the desired thickness is set to the first Wherein the surface of the ALD reactor is substantially in contact with at least one of the first reactant and the second reactant. In some embodiments, the ALD reactor is configured for selective deposition, wherein the substrate comprises a first surface and a second surface that is different from the first surface, the first reactant being selective on the first surface And the second reactant reacts only with one single layer of the first reactant on the first substrate and does not react with the second surface and a film of the desired thickness is selectively deposited on the first surface with respect to the second surface Lt; / RTI > In some embodiments, the ALD reactor further comprises a purge location configured to receive the first substrate after contacting the first substrate with the first reactant and before placing the first substrate in the second station, wherein the purge location is Wherein the purge location is not in a gas communication with the first station and is not in gas communication with the second station. In some embodiments, the purge location includes an intermediate space. In some embodiments, the first station is configured to purge the first reactant after the first substrate contacts the first reactant and before placing the first substrate in the second station. In some embodiments, the ALD reactor is configured to prevent the simultaneous presence of significant amounts of the first reactant and the second reactant in any station of the ALD reactor. In some embodiments, the ALD reactor is configured to substantially prevent chemical vapor deposition (CVD) from occurring on any surface of the first and second stations of the ALD reactor. In some embodiments, the ALD reactor further comprises at least one solid material that provides gas isolation between the first and second stations. In some embodiments, gas isolation between the first and second stations is not provided by the gas bearing. In some embodiments, the first station is in a fixed position relative to the second station. In some embodiments, the transport system includes a rotating substrate holder configured to remove the first substrate from the first station and place the first substrate in the second station by rotation. In some embodiments, the transport system includes a spider. In some embodiments, each station is configured to include a movable stage configured to move the substrate from the station to the intermediate space, wherein the substrate transfer member is configured to position the substrate on the movable stage and to remove the substrate from the movable stage in the intermediate space But the substrate transfer member is not configured to place the substrate within the station itself or to remove the substrate from the station itself. In some embodiments, the ALD reactor further comprises a first gas line for placing the first station in gas communication with the first reactant, and a second gas line for placing the second station in gas communication with the second reactant Wherein the first gas line is separate from the second gas line. In some embodiments, the ALD reactor is configured to support a third station in a gas isolated state with a first station and a second station, wherein the third station supports a second substrate, 1 reactant is configured to contact and the first reactant reacts with the second substrate so that only a single layer of the first reactant is absorbed onto the second substrate) and the first, second, and third stations And a fourth station in a gas isolated state wherein the fourth station is configured such that the second substrate is in contact with the second reactant in the substantially absence of the first reactant, wherein the second reactant is one of the first reactant on the second substrate To form the desired material on the second substrate). In some embodiments, the ALD reactor is configured to include a first station and a second station and a third station in a gas isolated state, wherein the third station comprises a first substrate, And a third reactant different from the second reactant to adsorb only a single layer of a third reactant on the second exposed surface), and a second isolator configured to adsorb the first reactant, the second station, and the third station, And a fourth station configured to include a first substrate wherein the fourth station is configured to receive the first, second, and third reactants in a state where the first substrate is different from the first, second, and third reactants and substantially free of the first, Wherein the fourth reactant reacts with only one single layer of the third reactant other than the first exposed surface so that only a single layer of the fourth reactant is adsorbed onto the second exposed surface Added) It includes. In some embodiments, the first station is configured such that the first substrate is in the first station while being placed in a gas isolated condition with the second station. In some embodiments, the first station is configured to be gas isolated from the second station before the first substrate is placed in the first station. In some embodiments, the second station is configured such that the first substrate is in the second station while being placed in a gas isolated condition with the first station. In some embodiments, the second station is positioned so as to be gas isolated from the first station before the first substrate is placed in the second station.

In some aspects, a reactor is provided for depositing on a substrate. The reactor may include a first station configured to contain a substrate and to provide a first reactant on the substrate. The reactor may include a substrate and the substrate may comprise a second station configured to provide a second reactant wherein the second station is in a gas isolated condition with the first station and the second reactant is different from the first reactant Do. The reactor may comprise an intermediate space. The reactor may include a substrate transfer system comprising a spider configured to transfer a substrate through an intermediate space, wherein the surface of the reactor is substantially out of contact with both the first reactant and the second reactant. In some embodiments, the substrate transport system further includes a first movable stage configured to move the substrate between the first station and the intermediate space, and a second removable stage configured to move the substrate between the second station and the intermediate space And the spider is configured to move the wafer from the first mobile stage to the second mobile stage. In some embodiments, each movable stage includes a lift pin configured to lift the substrate of the movable stage within the intermediate space. In some embodiments, the reactor further comprises a plurality of removable physical barriers defining at least a portion of the first station and the second station, wherein the physical barriers can be moved to expose the substrate in the station to the intermediate space, Wherein the spider is configured to move the substrate after the physical barrier is exposed to the substrate.

1A is a flow diagram illustrating a method of atomic layer deposition in accordance with some embodiments of the present disclosure. 1B is a flow diagram illustrating a method of selective atomic layer deposition according to some embodiments of the present disclosure.
FIG. 2A is a schematic representation of a reactor arrangement of the prior art, and FIG. 2B is a schematic representation of a conventional process (which may be implemented in the reactor of FIG. 2A ).
3A is a schematic representation of a reactor and method for moving a substrate between stations in accordance with some embodiments of the present disclosure. Figure 3b is a schematic representation of process steps (which may be implemented in the reactor and method of Figure 3a ).
4A is a schematic representation of a reactor and method for moving a substrate between stations, which may be optionally repeated, in accordance with some embodiments of the present disclosure. FIG. 4B is a view schematically showing a conventional process. FIG. Figure 4c is a schematic representation of process steps (which may be implemented in the reactor and method of Figure 4a ).
Figure 5 is a schematic representation of a reactor and method for moving a substrate between stations, which may be optionally repeated, in accordance with some embodiments of the present disclosure.
Figure 6 is a schematic representation of a reactor and method for rotating a substrate between stations, which may be optionally repeated, in accordance with some embodiments of the present disclosure.
Figure 7A is a schematic representation of an exchange according to some embodiments of the present disclosure. Figure 7b is a schematic representation of rotation in accordance with some embodiments of the present disclosure.
Figure 8a is a view schematically showing a Ru / SiO ₂ or GeO ₂ deposited in two separate stations in gas isolated from each other, according to some embodiments of the present application. Figures 8ba to 8bd Is a process diagram showing a Ru / SiO ₂ or GeO ₂ deposited in accordance with some embodiments of the present application.
Figure 8c is a schematic diagram showing the chemical compounds formed from Ru / SiO ₂ or GeO ₂ deposited in two separate stations in gas isolated from each other, according to some embodiments of the present application. Figure 8d is a schematic diagram showing the chemical compounds formed from Ru / SiO ₂ or GeO ₂ deposited in two separate stations in the gas being isolated from each other, according to some embodiments of the present application.
9 is a schematic diagram illustrating various process flows for an Sb / W pair in accordance with some embodiments of the present disclosure.
10 is a schematic diagram illustrating a spider in accordance with some embodiments of the present disclosure;
11A is a top-down view of a reactor according to some embodiments of the present disclosure. Each reactor chamber includes three process chambers (P1, P2, P3, each process chamber including a different station in gas isolation from the other station), wherein the spider transfers the substrate from the process chamber to the process chamber . The end effector 210 fixed within the wafer handling chamber (WHC) can add and remove substrates from the spider (in communication with the process chamber) and / or the load lock chamber (LLC).
11B is a top-down view of a reactor according to some embodiments of the present disclosure. Each of the reaction chambers includes two of the first kind of process chambers P1 and two of the second kind of process chambers P2. As such, a plurality of wafers can be exchanged between P1 and P2 in each reaction chamber. The reactor also includes a wafer handling chamber (WHC) that includes an end effector 210 that can add or remove a substrate from a spider (communicating with the process chamber) and / or add or remove a substrate from the load lock chamber (LLC) .
Figure 11C is a top-down view of a reactor according to some embodiments of the present disclosure. Each of the reaction chambers includes four process chambers P1, P2, P3, and P4. As such, the wafer can rotate between four different process chambers. The reactor also includes a wafer handling chamber (WHC) that includes an end effector 210 that can add or remove a substrate from a spider (communicating with the process chamber) and / or add or remove a substrate from the load lock chamber (LLC) .
12 is a diagram illustrating an example of repeating stacking of different films from a plurality of different processes on a substrate according to some embodiments of the present application. The different processes may include combinations, such as deposition, etching, and / or pre- / post-surface treatment.
13A and 13B illustrate an example of a conventional tool structure having a load lock chamber LLC in which a process (typically a homogeneous process) is performed on a substrate and a central wafer handling chamber (WHC) in combination with a reactor chamber RC FIG.
Figures 14A and 14B and 14C are views of a sequence of different process stacks in a conventional tool structure (repeating three different processes as shown in Figure 12 on a substrate). Figure 14d shows the corresponding process flow for Figures 14a-14c . When the above-mentioned different process stacks are deposited on a substrate by such conventional tools, since only one reaction chamber (RC) or RC unit acts for the process and the other RC remains in the standby state, Note that it can not be a process flow. The abbreviations used in Figure 14d include: LD: substrate loading; UL: Unloading the substrate; P1, Step 1: Step 1 is performed on the first substrate on the stage-1; P2, 1: Step 2 is performed on the first substrate on the stage-2; P3, 1: Step 3 is performed on the first substrate on the stage-3. Dark gray means RC is in standby (no process, no transfer). The process efficiency is very low because two RCs are waiting while other RCs are operating on the process.
Fig. 15 is a diagram showing a conventional apparatus that can be found in U.S. Patent No. US6469283 B1. Note that the reference numerals in this drawing correspond to the reference numerals in U.S. Patent No. 6469283 B1.
16 is a cross-sectional view of a process module PM substantially divided into a plurality of reactor chambers (RC, each RC includes a station) according to some embodiments of the present application. By way of illustration, FIG. 16 shows a stage in the " upper " position, in which the stations are placed in gas isolation from each other.
17 is a cross-sectional view of a process module PM for substrate transfer according to some embodiments of the present application. The PM can create one intermediate space by moving the stage. By way of example, FIG. 17 shows a stage in the " lower " position, thus providing a generally accessible intermediate space from the station.
18 is a diagram illustrating rotating substrate transfer in a process module PM according to some embodiments of the present disclosure. The intermediate space can transport the substrate between the PM and the WHC or between each stage of the PM.
19A is an illustration of a tool structure example in a central WHC in combination with a PM having three RCs (each RC includes a station) in a gas isolated state from each other according to some embodiments of the present disclosure. Each RC has a process stage in it. At the center of the PM, a stage-stage substrate transfer mechanism is also provided as part of the substrate transfer system. The substrate transfer system transfers the substrate by up and down and rotational movement. Figure 19B is a flow chart that may be used in conjunction with the structure of Figure 19A for example, in accordance with some embodiments of the present disclosure.
Figure 20 is a graph showing a sequence of three different processes (as in Figure 12 ) when three different processes are repeated on three wafers simultaneously according to some embodiments of the present application. The RC standby phase compared with the case of a conventional tool shown in FIG. 13, rarely it can be seen that a much more efficient sequence is executed. The total sequence time T is compared between a conventional tool and a reactor according to some embodiments herein. T is plotted for the variable time ratio n (n = 1 to 7) of the process / transfer. The simulation was performed under the precondition of repeating three different processes x 3 times on three substrates.
21 is a graph showing a sequence time T when m different kinds of processes are repeated for m substrate pieces (m = 1 to 5) x 5 times. In this simulation, the process / transfer time ratio is fixed at 2 (n = 2). T is given by the formula of T = 12m < 2 > + 3m in the case of the conventional tool structure, and is given by T = 16m in the case of the present invention. The graph shows that the advantage is getting larger as m gets larger.

According to some embodiments herein, the thin film may be deposited by atomic layer deposition (ALD). The substrate is disposed within the first station and may be contacted with the first reactant such that only a single layer of the first reactant is adsorbed onto the substrate. The substrate can then be placed in a second substrate station that is free of (or substantially free of) the first reactant and contacted with a second reactant that reacts with the adsorbed first reactant. The cycle may be repeated. The stations may be gas isolated from each other, wherein each station provides only one reactant, and the surface of any station is not in contact with one or more reactants. Without being limited to any theory, it is believed that maintaining spatial and / or temporal separation between reactants can minimize unwanted ALD and / or CVD on surfaces other than the substrate. In some embodiments, selective ALD, e.g., single-selective or dual-selective ALD, is performed.

According to some embodiments herein, the thin film may be selectively deposited on the first surface of the substrate with respect to different surfaces of the second substrate by atomic layer deposition (ALD). The substrate may be disposed within the first station wherein the first reactant contacts the substrate such that only a single layer of the first reactant is preferentially adsorbed to the first exposed surface of the substrate relative to the second exposed surface of the substrate . Subsequently, the substrate can be placed in a second station, wherein the second reactant is contacted with the substrate under the absence (or substantially absence) of the first reactant. The second reactant may preferentially react with the adsorbed first reactant so that only a single layer of the second reactant is adsorbed onto the first surface of the substrate relative to the second surface. Optionally, the substrate can be repeatedly moved between the first and second stations until a thin film of desired thickness is formed. Optionally, the first reactant is adsorbed onto the first exposed surface rather than the second exposed surface. Optionally, the selectivity can be increased by increasing the spatial or temporal separation of the gaseous reactants. The first and second stations may be in a gas isolation state during the process step to minimize undesirable chemical vapor deposition (CVD) reactions on the other surface of the wafer or on the station, including the first and second reactants. For example, after contacting the wafer with the reactants in the station, the station may be purged before the wafer moves to another station to minimize the transfer of reactants to another station.

Atomic layer deposition

The ALD type process is based on controlled self-limiting surface reactions of precursor chemicals. The vapor phase reaction is avoided by bringing the substrate into contact with the precursor alternately and continuously. The gaseous reactants can be removed, for example, by removing excess reactants and / or reactant by-products from the reaction chamber between the reactant pulses, or by providing different reactants in different spaces and moving the substrate between different spaces, Are separated from each other on the surface.

The deposition temperature is generally below the thermal decomposition temperature of the reactants, but is maintained at a level high enough to avoid condensation of the reactants and provide activation energy for the desired surface reaction. Of course, the appropriate temperature range for any given ALD reaction will depend on the surface termination involved and the species of reaction. Often, a substrate comprising a first surface and a second different surface (e.g. comprising different compositions and / or different shapes or crystallinity) can be heated to a suitable deposition temperature at a generally lowered pressure. According to some embodiments herein, the temperature may range between any two of the listed values, such as 20 ° C to 500 ° C, 20 ° C to 400 ° C, 20 ° C to 300 ° C, 20 ° C to 200 ° C, 100 ° C, 50 ° C to 500 ° C, 50 ° C to 400 ° C, 50 ° C to 300 ° C, 50 ° C to 200 ° C, 50 ° C to 100 ° C, 100 ° C to 500 ° C, 100 ° C to 400 ° C, Such as 100 ° C to 200 ° C, 200 ° C to 500 ° C, 200 ° C to 400 ° C, or 200 ° C to 300 ° C, for example, about 600 ° C or less such as 500 ° C, 450 ° C, 400 ° C, 350 ° C, 250 ° C, 200 ° C, 150 ° C, 100 ° C, 50 ° C or 20 ° C or less.

The terms " wafer " and " substrate " are used interchangeably herein. The substrate surface may be contacted with the gaseous first reactant. In some embodiments, a pulse of the gaseous first reactant is provided in a reaction space containing the substrate. In some embodiments, the substrate is transferred to a reaction space in which the gaseous first reactant is provided. Preferably, the gaseous reactant is not present in the reaction space when the substrate moves into the reaction space, and the gaseous reactant is subsequently provided in the reaction space. In some embodiments, the gaseous reactant is already present in the reaction space when the substrate is moved into the reaction space. Optionally, some gaseous reactant is already present in the reaction space when the substrate is placed in the reaction space, and then an additional gaseous second reactant is added to the reaction space. The conditions are preferably such that no more than about a single layer of the first reactant is adsorbed on the substrate surface in a self-limiting manner. The appropriate contact time can be readily determined by one skilled in the art based on the particular circumstances. Excess of the first reactant and, if present, the reaction by-products are removed from the substrate surface, for example, by purging the inert gas or by removing the substrate from the presence of the first reactant.

"Purge" means that the gaseous precursor and / or gaseous byproducts are removed by, for example, evacuating the chamber with a vacuum pump and / or replacing the gas inside the reactor with an inert gas such as argon or nitrogen. Typical (and accordingly suitable) purge times are from about 0.05 to 20 seconds, more preferably from about 1 to 10, and even more preferably from about 1 to 2 seconds. However, if necessary, high purge times, such as purge times of at least 20 seconds, such as any two ranges of listed values, are required if high conformal step coverage is required, for example, for very high aspect ratio structures or other structures with complex surface morphologies. At least 20 seconds, 25 seconds, 30 seconds, 40 seconds, or 50 seconds may be used.

The substrate surface may be in contact with the gaseous second gaseous reactant. In some embodiments, a pulse of the second gaseous reactant is provided in a reaction space containing the substrate. In some embodiments, the substrate is transferred to the reaction space when the gaseous second reactant is provided. Optionally, the gaseous second reactant is already present in the reaction space when the substrate is placed in the reaction space. Optionally, the gaseous second reactant is not present in the reaction space when the substrate is placed in the reaction space, and the second reactant is subsequently added to the reaction space. Optionally, some gaseous second reactants are already present in the reaction space when the substrate is placed in the reaction space, after which additional gaseous second reactants are added to the reaction space. Excess gaseous byproducts of the second reactant and, if present, surface reaction are removed from the substrate surface. The contacting and removing steps are repeated until a thin film of the desired thickness is selectively formed on the surface of the substrate, each cycle leaving only a single layer of molecules. Additional phases may be included to form more complex materials, such as ternary materials, including alternating continuously contacting the substrate surface with other reactants.

As noted above, each phase of each cycle is preferably self-limiting. Excess reactant precursors may be provided to each phase to saturate the delicate structural surface. Surface saturation ensures excellent step coverage because it ensures reactant occupancy of all available reaction sites (e. G., Application of physical size or " steric hindrance " reactants). Typically, only one molecular layer of material is deposited in each cycle (or less than one molecular layer is deposited in each cycle). However, in some embodiments, only one or more of the molecular layers may be deposited during the cycle.

The step of removing excess reactants may include draining some of the contents of the reaction space and / or purging the reaction space with helium, nitrogen or other inert gas. In some embodiments, it may include blocking the flow of reactive gas while continuing to flow the expanding inert carrier gas into the reaction space.

The precursor used in the ALD type process may be a solid, liquid or gaseous material under standard conditions (room temperature and atmospheric pressure) when the precursor is gaseous prior to contacting the substrate surface. Contacting the substrate surface with the vaporized precursor means that the precursor vapor is in contact with the substrate surface for a limited period of time. Typically, the contact time is about 0.05 to 10 seconds. However, depending on the substrate type and its surface area, the contact time can be much longer than 10 seconds. The contact time may be in minutes depending on the case. The optimal contact time can be determined by one skilled in the art based on the particular circumstances.

The mass flow rate of the precursor can also be determined by one skilled in the art. In some embodiments, the flow rate of the metal precursor is preferably from about 1 sccm to about 1000 sccm, more preferably from about 100 sccm to about 500 sccm, without limitation. An exemplary mass flow rate in accordance with some embodiments herein may be at least 10 sccm, 100 sccm, 100 sccm, 200 sccm, 300 sccm, 400 sccm, including values between at least 1 sccm, for example between any two of the listed values. , 500 sccm, 600 sccm, 700 sccm, 800 sccm, 900 sccm, or 1000 sccm.

The pressure in the reaction chamber is typically from about 0.01 mbar to about 20 mbar and more preferably from about 1 mbar to about 10 mbar such as 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 m bar. However, in some cases, the pressure may be higher or lower than this range, as can be determined by one skilled in the art in a given specific situation.

Prior to beginning deposition of the film, the substrate is typically heated to an appropriate growth temperature. Growth temperature depends on the type of thin film formed, the physical properties of the precursor, and so on. The growth temperature is discussed in more detail below with reference to each type of thin film formed. The growth temperature is lower than the crystallization temperature for the deposited material, so that an amorphous thin film may be formed or a crystallization temperature may be exceeded so that a crystalline thin film may be formed. The preferred deposition temperature may vary depending on the composition of the substrate, including without limitation, the reactant precursor, the pressure, the flow rate, the arrangement of the reactor, the crystallization temperature of the deposited film, and the nature of the material to be deposited thereon. Certain growth temperatures may be selected by those skilled in the art. In some embodiments, the first and second reactants for the ALD reaction have the same growth temperature. In some embodiments, the first and second reactants for the ALD reaction have different growth temperatures. Optionally, the first reactant has a higher growth temperature than the second reactant. Optionally, the first reactant has a lower growth temperature than the second reactant. An ALD according to some embodiments herein may include thermal ALD. The ALD according to some embodiments herein may include thermal plasma assisted ALD or plasma enhanced ALD (PEALD).

An example of a suitable reactor that may be used includes a reactor having a plurality of stations in which the stations can be arranged or arranged gas isolated from each other. ALD equipment is commercially available, for example, from ASM, which is headquartered in Almir, the Netherlands. In some embodiments, a flow type ALD reactor is used. Preferably, the reactants remain separated until reaching the reaction chamber, minimizing the sharing line for the precursor. However, other arrangements are possible, for example the pre-reaction chambers described in U.S. Patent Application Nos. 2005/0092247 and 2002/0108570 are used, the disclosure of which is incorporated herein by reference in its entirety.

The growth process may optionally be performed in a reactor or reaction space connected to the cluster tool. In the cluster tool, since each reaction space is dedicated to one type of process, the temperature of the reaction space within each module can be kept constant, which means that compared to a reactor heated to process temperature before the substrate is each run, .

The stand-alone reactor may be equipped with a load-lock. In this case, it is not necessary to cool the reaction space between each run.

Chemical vapor deposition

In some embodiments, a portion of the thin film or film is deposited by chemical vapor deposition (CVD) using one or more of the precursors described herein. For example, in some embodiments, the film may be deposited by CVD prior to one or more cycles of ALD on the film produced by CVD, and / or after one or more cycles of ALD. For example, in some embodiments, CVD is performed on the desired substrate, but ALD is not performed. Deposition can be suitably performed according to various CVD methods. CVD methods are described, for example, in U.S. Patent No. 7,438,760, which is incorporated herein by reference in its entirety. The method disclosed in accordance with some embodiments herein may be suitably implemented by applying CVD. In some embodiments, the CVD is thermal. In some embodiments, the CVD is plasma-enhanced chemical vapor deposition (PECVD).

The CVD reactants and, optionally, two or more reactants comprising an etch gas and / or an electrically dopant precursor are preferably introduced into the chamber either in the form of a separate gas or by mixing for the formation of a feed gas. Mixing to form the feed gas may occur within the chamber or prior to introduction of the feed gas into the chamber. The total pressure in the CVD chamber is preferably in the range of about 10 ^-5 Torr to about 1000 Torr, more preferably in the range of about 10 ^-4 Torr to about atmospheric pressure, such as about 760 Torr. In some embodiments, the chemical vapor deposition conditions include a chamber pressure of at least about 10 ^-5 Torr, preferably a chamber pressure of about 760 Torr, 740 Torr, 720 Torr, 700 Torr, 680 Torr, 660 Torr , 640 Torr, 620 Torr, 600 Torr, 580 Torr, 560 Torr, 540 Torr, 520 Torr, 500 Torr, 480 Torr, 460 Torr, 440 Torr, 420 Torr, 400 Torr, 350 Torr, 300 Torr, 250 Torr, 200 Torr, a pressure below 150 Torr, or from about 10 ^-4 Torr to about 760 Torr, for example, including any value between the two of the listed value of about ^{10 -4 Torr, 10 -3 Torr,} 10 -2 Torr, 10 ^-1 Torr, 1 Torr, 5 Torr, 10 Torr, 30 Torr, 50 Torr, 100 Torr, 150 Torr, 200 Torr, 250 Torr, 300 Torr, 350 Torr, 400 Torr, 450 Torr, 500 Torr, 600 Torr, 650, 700 Torr, 750 Torr, or 760 Torr. The chamber pressure may be referred to herein as the deposition pressure. The partial pressure of the Sn precursor is preferably in the range of about 0.0001% to about 100% total pressure, more preferably about 0.001% to about 50% total pressure. In some embodiments, the temperature of the CVD reaction chamber is below about 600 ° C, such as below about 550 ° C. In some embodiments, the temperature of the reaction chamber is less than or equal to about 500 캜, such as about 500 캜, 490 캜, 480 캜, 470 캜, 460 캜, 450 캜, 440 캜, 430 캜, 420 캜, 410 캜, , 375 ° C, 350 ° C, 325 ° C, or 300 ° C or less.

station

As used herein, " station " refers collectively to a location that may contain a substrate such that a deposition reaction may be performed on a substrate within the station. Thus, the station may refer to a reactor, or a portion of a reactor, or a reaction chamber within a reaction space or reactor.

Preferably, stations according to embodiments herein are configured to be "gas isolated" or gas isolated from each other while the substrate is being processed inside the station. As used herein, " gas quarantine " means that a first reactant in a first station can not flow or diffuse detectably to another station, and another reactant (e.g., from another station) It can not flow or diffuse. Stations in accordance with embodiments herein may be permanently gas isolated from each other (e.g., separated into solid walls or discrete chambers), or may be reversible gas-insulated from each other (e.g., the substrate is located within a given station By placing a solid barrier or a gas bearing or gas curtain (e.g., an inert gas curtain, such as an N ₂ curtain) just before placing the substrate in a given station, or after placing the substrate in a given station, wherein the solid barrier or gas bearing or gas curtain is in a gas isolated state As shown in Fig. In some embodiments, the station is gas isolated by a physical barrier, not a gas bearing or gas curtain. In some embodiments, the station is gas isolated by a gas barrier and a physical barrier bonded to the gas curtain. In some embodiments, after or after the placement of the substrate within a particular station, the substrate is placed in a gas isolated condition with the other station (such that the processing step can be performed at the station) The station is gas isolated, and the substrate can be removed from the station and placed in the intermediate space. Substrates from a plurality of different stations may be placed in a shared intermediate space for movement from station to station. The station may be placed in a gas isolated state, for example, by a physical barrier.

In some embodiments, the stations are separated from each other by solid materials and are not separated from each other by gas bearings or gas curtains. In some embodiments, the stations are separated from each other by a solid material or a gas curtain, and are not separated from each other by a gas bearing. In some embodiments, the stations are separated from one another by solid materials or gas bearings, and are not separated from one another by gas curtains. Optionally, the physical barrier can move in combination with a moving stage that shuttles the substrate between the station and the intermediate space, so that the physical barrier is maintained in a gas isolated state at the same time (or only slightly before or after) . Optionally, the physical barrier may be used in conjunction with a gas barrier, for example, to fill some of the gaps left by the physical barrier. In some embodiments, a physical barrier is provided, but no gas barrier or gas curtain is provided.

In some embodiments, the station includes a reactor module or chamber, so that each station includes a separation chamber or module. In some embodiments, the station includes a portion of the reaction chamber that can be placed in a gas isolated state from other portions of the reaction chamber by placing a wall, gas curtain, or gas bearing between the stations. Optionally, a given station is completely closed by one or more walls, gas curtains, gas bearings or any combination of these items. It is believed that the physical separation between the two stations providing different reactants can further facilitate gas isolation according to some embodiments herein. Thus, in some embodiments, the first station providing the first reactant is not immediately adjacent to the second station providing the second reactant, but rather the physical space is connected to the first and second stations, as well as optional features, Wall or gas wall or between the gas bearing and / or the chamber between. In some embodiments, a scavenger (e.g., a secondary precursor scavenger in vacuum communication with gas) is positioned between the stations to escape and / or escape from the station or scavenges any precursors that are dragged with the substrate.

According to some embodiments herein, the station for deposition is in gas communication with the reactant supply, so that the reactants can flow into the station. Typically, a station for deposition (e.g., ALD) according to various embodiments of the present disclosure will provide only one reactant each (e.g., the first station may provide only one reactant for the first half reaction And the second station may provide only one different reactant for a second, different half-reaction to terminate the ALD reaction. Thus, for ALD, the first station may provide a first reactant and the second station may provide a second reactant different from the first reactant. The second reactant may react with a layer (typically less than one monolayer) obtained from the absorption of the first reactant in contact with the substrate at the first station. (CVD) -type reactions that can result in undesirable deposition on the surface of the reactor and / or substrate when a plurality of first and second gases and / or plasma reactants are in contact with one another. It should be noted that Selective ALD processes are particularly susceptible to loss of selectivity due to CVD reactions and / or film degradation. In addition, ALD processes involving two or more reactants, such as bi-optional ALD (which may include 4, 6, or more reactants), can lead to loss of selectivity and / or film degradation due to CVD reactants between various reactants It is particularly vulnerable. Thus, according to some embodiments herein, it is contemplated that physical and / or temporal separation between different reactants is provided to avoid undesirable CVD-type reactions. Preferably, the first station provides a first reactant that is not a second reactant, and the second station provides a second reactant that is not a first reactant. The first and second stations may be in gas isolated state from each other. As such, the second reactant may be substantially or completely absent from the first station, and the first reactant may be substantially or completely absent from the second station, which may result in an undesirable reaction between the first reactant and the second reactant CVD-type reactions can be minimized or eliminated. Note that only an arbitrary multi-station ALD reactor provides gas isolation between stations. For example, a number of conventional multi-station ALD reactors may be used to provide a plurality of reactors, for example by providing multiple reactants at the same station, or by rapidly moving the substrate while allowing " trailing " reactants to move with the substrate and react with the other reactants Incomplete separation or separation members between the reactants. In addition, conventional emphasis on increasing throughput alone may be achieved, for example, by rapidly moving the substrate from the station (and bringing a relatively high concentration of " trailing " reactant to the next station) Undesirable CVD-type, or other undesirable reactions. Process Advantages It is contemplated according to some embodiments herein that relatively low throughput is acceptable to obtain a highly selective deposition, a high film quality, and / or the absence of deposits on the reactor.

In some embodiments, the station is configured for thermal ALD. In some embodiments, the station is configured for PEALD. Alternatively, the plasma may be generated or generated in situ by a remote plasma generator.

In some embodiments, the reactants in the station are delivered through the showerhead. Optionally, the showerhead includes a vacuum evacuation scavenger around its periphery to capture excess reactants and minimize the amount of reactants that are likely to participate in a CVD reaction with other reactants. In some embodiments, the reactants are contained within the station (and / or the reactant source line and / or purge line), but no entry into any space between the stations is allowed.

Note that for some indexed multi-station processes (e.g., a process in which a substrate is moved between multiple stations), stations with the slowest process times are rate-limited. That is, if the first station requires three seconds for deposition and purging, no more than one substrate may be cycled through the station every three seconds, although other stations may require less than three seconds to provide and purge reactants have. This may slow down / slow down or waste reactants if the reactants are continuously supplied at a station requiring shorter exposure times to the substrate. In some embodiments, the reactants are not continuously supplied to each station, but rather the exposure time at each station is selected based on the particular reaction occurring at that station. Thus, if the first reactant in the first station requires a shorter exposure time than the second reactant in the second station, the flow of the first reactant can be blocked in the first station after a sufficient deposition time for the first reactant , And even the second reactant is still supplied to the second station. Optionally, excess reactant is recovered. For example, if reactant # 1 is in contact with the substrate for one second in station # 1, reactant # 2 is in contact with the substrate in station # 2 for three seconds, and substrate is in contact with reactant # 1 for one second in station # , The vacuum can recover excess reactant # 1 during continuous contact at station # 2. Note that Reactant # 1 can flow continuously, or the flow of Reactant # 1 can be blocked after contact. Optionally, the reactants are provided through a showerhead or showerhead dispenser, which further includes a vacuum around its perimeter. After a sufficient time for the reactants to deposit, the vacuum recovers any excess reactants. Optionally, a showerhead or showerhead type dispenser may be configured to allow reactants to flow from the center to the edge of the substrate. The arrangement of these reactant streams is believed to be capable of minimizing or eliminating the edge effect which may be characteristic of the transverse flow design.

According to some embodiments herein, the substrate is shuffled between two or more stations, and the two stations do not provide the same reactants. For example, the first station may provide a first reactant selectively adsorbed on a first exposed surface of the substrate (for a second, different exposed surface of the substrate that is not adsorbed or substantially does not) to form a first exposed surface And the second station may provide a second reactant different from the first reactant and react with the adsorbed first reactant so that only a single layer of the second reactant reacts with the substrate 1 adsorbed onto the exposed surface (but not with the second different exposed surface of the substrate). The substrate can be repeatedly shuffled back and forth between the first station and the second station until a film of the desired thickness is formed. In some embodiments, the substrate moves continuously between stations. However, continuous movement can result in mixing of different reactants (e.g., when the substrate holder is continuously moving between station 1 and station 2, some of the reactants in station 1 may remain coupled with the substrate holder Can be " dragged " along station 2), which can lead to undesirable CVD reactions between different reactants. On the other hand, a pause-start operation associated with a fast movement of the substrate between the station and the station, such as pause or near pause in the indexing, may minimize the time the substrate is outside the station and / (Thus minimizing potential exposure to reactants escaping from other stations), which may facilitate purging of a given station before the substrate escapes the station. Thus, in some embodiments, the movement of the substrate between the stations is not continuous, but rather involves an indexing operation, such as a pause-start or an alternating slow-fast operation.

An example of an approach and corresponding process steps for moving a substrate from station to station in accordance with some embodiments of the present disclosure is schematically illustrated in Figures 3-6 and described in more detail below.

In some embodiments, the substrate has a length of less than 1000 milliseconds, e.g., between any two listed values, such as 10 to 1000 msec, 10 to 500 msec, 10 to 400 msec, 10 to 300 msec, 10 to 200 10 to 100 msec, 30 to 1000 msec, 30 to 500 msec, 30 to 400 msec, 30 to 300 msec, 30 to 200 msec, 30 to 100 msec, 50 to 1000 msec, 50 to 500 msec, 50 to 400 900 ms, 1000 msec, 1000 msec, 100 msec, 100 msec, 100 msec, 50 to 300 msec, 50 to 200 msec, 50 to 100 msec, 100 to 1000 msec, 100 to 500 msec, 100 to 400 sec, (E.g., from one station to the next station in the process sequence at less than 800, 700, 600, 500, 400, 300, 200, 175, 150, 125, 100, 75, 50, 25, 10, Movement time between the first station and the second station, and time at the station). Optionally, the substrate may be shuffled between two or more stations separated by a solid material, such as a wall, rather than a gas bearing or gas curtain. Optionally, the substrate is shunted between stations along an annular path or arc rather than a straight path. Optionally, the substrate is shuffled between stations along a straight path, rather than a call or annulus path. It is also contemplated that moving the substrate from station to station without passing through any additional locations in accordance with some embodiments herein may increase throughput by minimizing processing time. Optionally, the substrate is moved directly from the first station to the second station without passing through the additional location.

It is contemplated, according to some embodiments herein, that minimizing the physical structure through the station at the station can facilitate gas isolation between different stations. For example, rather than moving the susceptor between stations, providing the susceptor within each station can minimize residual reactants trailing along the susceptor and further minimize CVD type deposition on the susceptor itself . For example, undesirable CVD types deposited on the susceptor itself can be minimized by simply moving the substrate into a station where no reactants are present. In some embodiments, the substrate is moved from station to station and placed on stationary susceptors at each station. As such, the substrate is not disposed on any susceptor moving between stations. In some embodiments, the susceptor does not move from station to station. For example, a rotating plate wafer holder (e.g., in the form of a " lazy Susan ") is likely to bring the remaining reactant "trailing" from the station to the station. Further, a conventional " plate " wafer holder for holding and / or rotating the plate to transfer the wafer from the station to the station, or to expose the wafer to the reactant while the wafer is supported on the plate, Has the disadvantage that the surface adjacent to the wafer moves from station to station. As such, deposition (ALD and / or CVD) may occur on the surface of the plate, which is undesirable. Thus, in some embodiments, the substrate is not placed on the rotating wafer holder. In some embodiments, the ALD reactor does not include a rotating wafer holder. In some embodiments, the substrate is disposed only on the fixed substrate holder. In some embodiments, each station includes at least one wafer holder contained within the station and not moving out of the station. In some embodiments, the transfer member places the substrate on a susceptor in the station or on a wafer holder in the station. In some embodiments, the surface of the reactor is not exposed to one or more reactants. As such, in some embodiments, the surface is not substantially in contact with one or more reactants.

Preferably, after the substrate is placed on the susceptor in the station by the transfer member, the transfer member retracts from the station such that the transfer member does not contact any reactants.

According to some embodiments herein, the wafer surface is the only surface that is in repeated, sequential contact with two or more reactants (i.e., other surfaces such as susceptors, transfer members, chamber surfaces, gas supply conduits, and / But not in contact with two or more different reactants). According to various embodiments herein, contact with different reactants may occur at different stations. Thus, all internal surfaces of the station, including wall surfaces, susceptor surfaces, gas conduits, and discharge conduit surfaces, which communicate directly with the interior space of the station and any other reactor portion present within the station, Lt; / RTI >

It is noted that the inner surface of the station may be in contact with one or more inert gases (e.g., carrier gas and / or purge gas) other than the reactant gas. Any wafer transfer member for transferring wafers from one station to another station and for transferring from one station to another station will not be present in the station while the wafer is in contact with the reactants and thus will not be in contact with the reactants I will not.

Optionally, the substrate may remain stationary while exposed to reactants within each station. In some embodiments, the substrate is moved between two or more stations through a rotating wafer support system. The substrate can be placed on a wafer support, e.g., paddle, that can be rotated to allow movement of the substrate between the stations. Optionally, after the substrate contacts the reactants in the station, purging is applied to the rotating wafer support before rotating the substrate relative to the subsequent station. In some embodiments, the substrate is moved between two or more stations via a spider, such as the spider described herein. In some embodiments, the substrate is transported on an end effector from one station to another.

It is noted that when two different stations comprise two different reactants, different reaction conditions, such as different pressures and / or temperatures, may be maintained in different stations. For example, the first station may be the first temperature and pressure optimized for the first reactant of the first station, and the second station may be the second temperature and pressure optimized for the second reactant of the second station. As such, in some embodiments, the first station is at a different temperature than the second station. In some embodiments, the first station is at a different pressure than the second station. In some embodiments, the first station is at a different temperature and pressure than the second station. In some embodiments, the first station is at a different temperature than the second station, but the two stations are at the same pressure. In some embodiments, the first station is at the same temperature as the second station, but the two stations are at different pressures.

Optionally, the station is further in gas communication with the purge gas source and / or vacuum so that the station can be purged. For example, according to some embodiments herein, the station may be purged while the substrate remains in the first station after the substrate is contacted with the reactants at the first station (but before the substrate is moved to the second station) It is possible to minimize or eliminate the possibility that the remaining reactant is transferred to the second station together with the wafer. The reactants trailing on the substrate when moved to the next station can result in undesirable CVD-type reactions with other reactants in the next station, thus facilitating separation between the different reactants that diffuse, according to some embodiments herein , Which minimizes this undesirable CVD-type reaction.

Optionally, the " purge position " may be in gas communication with the purge gas and / or vacuum, but does not supply reactants to the substrate. It is contemplated that after contacting the first reactant in the first station, the substrate may be placed in the purge position. Purge can be performed while the substrate is in the purge position to remove any remaining first reactant from the substrate. After purging, the substrate can be placed in a second station that provides a second reactant to the substrate. Optionally, the purge location is gas isolated from each station providing the reactants. Note that the purge position may be compatible with purging the reaction station itself. For example, after the substrate contacts the reactants in the station (and while the substrate is still inside the station), the purge gas may be supplied to the station to allow the station to be purged, and the substrate is then placed in the purge position for further purge . For example, after the substrate contacts the reactants in the station (and while the substrate is still inside the station), the substrate may be placed in the purge position for further purging and the station itself may be placed in the purge (The spreading of the station can begin before, during, or after the substrate is removed). In some embodiments, the intermediate space (outside of the station) comprises a purge location, or the intermediate space is configured or essentially configured with a purge location.

In some ALD processes, some reactants under some set of reactant conditions (e.g., temperature, pressure, amount of reactants) can make it difficult for the reactants to purged from the chamber or station. It is contemplated that the method and apparatus according to some embodiments herein may be referred to as " making it difficult to purge " the reactants and conditions. For example, if a particular reactant under a particular set of reaction conditions is difficult to purge at a particular station, the station can continue to be purged before another substrate is placed in the station while the substrate can be removed from the station. Optionally, the substrate may be moved to the purge station to remove any residual trailing reactants, while the " hard to purge " reactant is continuously purged from the station.

It is believed that if the two reacting reactants are all in the same purge location or purge line, the reactants can leave undesirable CVD deposition on the purge location and / or purge line. Thus, in some embodiments, the different stations are in gas communication with different purge lines, so that the first reactant is not in contact with the second reactant in the purge line. For example, the station providing the first reactant may be in gas communication with the first purge line, and the station providing the second reactant may be in gas communication with the second purge line different from the first purge line . Thus, in some embodiments, different purge locations are associated with purifying different reactants. For example, the first purge location may be located downstream (in the process stream) from the first station providing the first reactant and the second purge location may be located downstream (in the process stream) from the second station providing the second reactant. The first reactant and the second reactant are not purged at the same purge location.

Optionally, in conjunction with, for example, dual selective ALD (described, for example, in U.S. Patent Application No. 14/687833, filed April 15, 2015, which is incorporated herein by reference in its entirety) The three stations are selectively adsorbed on the second exposed surface of the substrate to form a third reactant (first and second) that forms only a single layer (or a film deposited on the first exposed surface) Which is different from the reactants. In addition, the fourth station additionally provides a fourth reactant (different from the third reactant) with the third reactant adsorbed on the second surface so that only a single layer of the fourth reactant is adsorbed on the second surface. Each of the first, second, third, and fourth stations may be in a state of gas isolation from each other, either continuously or temporally (e.g., as when the substrates are disposed within respective stations).

Optionally, at least one station according to some embodiments herein comprises a susceptor onto which a substrate may be placed. The susceptor can be heated so that it can be configured to heat the substrate to a suitable temperature. It is noted that different reactants may be reacted at different temperatures. Thus, in some embodiments, the susceptor may heat the substrate for a different duration to allow the substrate to reach an appropriate temperature.

Optionally, the susceptor can have a lower mass than the substrate, so that the susceptor can be heated faster than the substrate. Optionally, the susceptor does not move from station to station.

In some embodiments, the ALD reactor comprises at least two stations, for example at least 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 , 13, 14, 15, 16, 17, 18, 19, 20, 30, 40, 50, 100, 150, 200, 250, 300, 400, or 500 stations. It is contemplated that it may be useful for the reactor to have at least twice the station of the substrate in order to minimize undesirable CVD reactions by maintaining separation between the different reactants according to some embodiments herein. For example, the reactor may be configured at a ratio of less than 0.5 substrates per station, e.g., a ratio of 0.5, 0.4, 0.3, 0.2, 0.1, or 0.05 substrates per station, including a range between any two of the listed values have.

ALD method

According to some embodiments herein, a method of atomic layer deposition (ALD) is provided. The method may include providing a substrate having an exposed surface. The method may include contacting the entire substrate with a first reactant at a first station such that only a single layer of the first reactant is adsorbed on the exposed surface. The method comprising placing a substrate in a second station and contacting the entire substrate with a second reactant in the substantially absence of the first reactant so that only a single layer of the second reactant adsorbs the first reactant To be adsorbed on the exposed surface of the substrate. Optionally, the substrate is disposed within the first station and the second station by a transfer system, wherein the surface of the transfer system is substantially free of one or more reactants. Optionally, the method is repeated until a film of desired thickness is deposited over the exposed surface. Optionally, in addition to the substrate itself, the other surface is not in contact with both the first and second reactants (e.g., the surfaces of the first and second stations, the gas feed line, the purge line, the susceptor, and / If present, does not contact both the first and second reactants). Optionally, the ALD comprises an optional ALD. Optionally, the ALD comprises a bi-selective ALD. In some embodiments, the surface of any station, substrate transfer member, and / or purge line is not substantially in contact with one or more reactants. As such, the surface within the station (other than the substrate itself if present) is substantially out of contact with one or more reactants.

In some embodiments, the method comprises selective ALD. The method may include providing a substrate comprising two different exposed surfaces (e.g., different compositions and / or different shapes or crystallinity). The method comprises contacting the entire substrate with a first reactant at a first station such that only a single layer of the first reactant is adsorbed onto the first exposed surface in preference to a second different exposed surface of the substrate . The method comprising placing a substrate in a second station and contacting the entire substrate with a second reactant in the substantially absence of the first reactant so that only a single layer of the second reactant adsorbs the first reactant To be adsorbed on the first exposed surface of the substrate. Optionally, the method is repeated until a film of the desired thickness (on the second exposed surface) is selectively deposited on the first exposed surface. According to the method, adsorption of the first reactant does not occur on the second exposed surface. Optionally, the method comprises dual selective ALD. Optionally, in addition to the surface of the substrate itself, the other surface is not in contact with both the first and second reactants (e.g., the surface of the first and second stations, the gas supply line, the purge line, the susceptor, and / If the member is present, does not contact both the first and second reactants).

Without being limited by any theory, it is believed that the CVD reaction can interfere with ALD, and in particular selective ALD or dual selective ALD, for example by reducing or eliminating selectivity. In addition, undesirable CVD reactions can reduce the quality of deposited films, leave undesirable deposits on the reactor, require additional cleaning processes, and / or damage the reactor. Selective ALD processes in accordance with some embodiments herein minimize and / or eliminate CVD reactions to provide highly selective deposition, high film quality, and also prevent any deposition on the reactor surface and extend the operating life of the reactor . Thus, in some embodiments, a physical and optionally temporary separation is maintained between the ALD reactants. In some embodiments, two different reactants are not present at the same location at any time during the ALD deposition process. By way of example, the substrate may be moved to a different station, each of which is gas isolated from the other station and provides a different reactant to the substrate. In addition, the residual reactant may be removed from the substrate before it is placed in the subsequent station to minimize undesirable CVD reactants, including residual reactants along the substrate to subsequent stations.

IA is a flow diagram illustrating an ALD method in accordance with some embodiments of the present disclosure. The method may include providing a first substrate ( 105 ). The method may include (a) placing a first substrate at a first station ( 115 ). The first substrate can be placed in the first station by a number of approaches, such as a substrate transfer system comprising a transfer member such as a rotating substrate holder or a spider. Optionally, the transfer member is arranged to position the substrate on a stage or susceptor, and the one or more removable barriers defining the first station are arranged to position the substrate within the first station in a gas isolated state. The substrate may be placed on an extended lift pin, which may be lowered to position the substrate on a suitable surface of the stage or susceptor. Optionally, the transfer member disposes the substrate on a first substrate transfer mechanism (e.g., a movable stage) in the intermediate space, and the first substrate transfer mechanism moves the substrate into the first station. Alternatively, each substrate transfer mechanism includes a plurality of lift pins configured to extend and retract the substrate from the substrate transfer mechanism in the intermediate space, or to retract to position the substrate on a suitable surface. The lifted substrate can be easily picked up by a substrate transfer member, such as a spider, to move the substrate to a different substrate transfer mechanism in the intermediate space. Optionally, after the substrate is placed on the stage or susceptor in the first station, or after the substrate is placed on the first substrate transfer mechanism, the substrate transfer member is retracted into the intermediate space. Alternatively, the first station, for example, be as a reagent and any other stations are provided (for example, the second station described herein) and a gas isolated, placed in a gas isolated state 125. The first station may be placed in a gas isolated state at the same time as or after the substrate is placed in the first station. Alternatively, the first station may be in a gas isolated state at the time the substrate is placed in the first station. In some embodiments, the first station is continuously gas isolated from the second station. The method may include (b) contacting the first substrate in the first station with the first reactant while the second reactant is substantially absent and the first station is in gas isolation with the second station, The first reactant reacts with the surface of the substrate such that only a single layer of the first reactant is adsorbed on the surface of the first substrate ( 135 ). The first reactant may flow into the first station after the first substrate is placed in the first station, or the first reactant may already be present in the first station when the first substrate is placed in the first station. Optionally, the first reactant is not present in the first station at the time the substrate is placed in the first station. Optionally, after exposure to the first reactant at the first station and before being placed in the second station, the first substrate may be moved to a first station, and / or to a purging position (e.g., ). ≪ / RTI > The method may include (c) placing ( 145 ) a first substrate in a second station. Optionally, one or more removable barriers defining the first station are moved to expose the substrate to the intermediate space. The lift pin, if present, can be extended to allow the substrate to be accessible to the transfer member. A transfer member (e.g., a rotating substrate holder or spider) can pick up the substrate and place the substrate on the second stage or susceptor. The substrate may be disposed on an extended lift pin, which may be retracted to position the substrate on a suitable surface. One or more removable barriers defining the second station may be moved to place the substrate in a gas isolated state within the second station. Optionally, the step of disposing the first substrate in the second station comprises moving the substrate to an intermediate space through a first substrate transport mechanism, e.g., a mobile stage, and then moving the substrate into a second substrate transport mechanism , A second mobile stage), which can place the substrate in the second station. Optionally, the substrate can be moved from the first substrate transfer mechanism in the intermediate space to the second substrate transfer mechanism in the intermediate space through a substrate transfer member (e.g., a spider or a rotating substrate holder). Optionally, after placing the substrate on the second stage or susceptor, or after placing the substrate on the second substrate transfer mechanism, the substrate transfer member is retracted into the intermediate space. Optionally, the second station may be positioned 155 in a gas isolated state with the first station, for example, the second station may be in a gas isolated state with any other station (e.g., the first station) . The second station can be placed at the same time as, or after, the substrate is placed in the second station. Alternatively, the second station may be gas insulated at the time the substrate is placed in the first station. In some embodiments, the second station is continuously gas isolated from the second station. The method may include (d) contacting a first substrate in a second station with a second reactant during a state where there is substantially no first reactant and the second station is gas isolated from the first station, Is different from the first reactant and reacts with only one single layer of the first reactant so that only a single layer of the second reactant is adsorbed on the surface of the first substrate ( 165 ). The second reactant may flow into the second station after the first substrate is placed in the second station or the second reactant may already be present in the second station when the first substrate is placed in the first station. Optionally, the second reactant is not present in the second station at the time the substrate is placed in the first station. Optionally, after being exposed to the second reactant in the second station and before being placed in another station (e.g., a first station, or a third station), the first substrate may be a second station, and / May be exposed to be purged at a different purge location (e.g., a purge location in the intermediate space) than the station. The method may include repeating steps (a) through (d) until a film of desired thickness is deposited on the surface of the first substrate, wherein step (b) is substantially free of the second reactant ( 175 ). Optionally, in addition to the surface of the substrate itself, the other surface is not in contact with both the first and second reactants (e.g., the surface of the first and second stations, the gas supply line, the purge line, the susceptor, and / If the member is present, the first and not in contact with both the second reactant) 185. Those skilled in the art will appreciate that the steps listed herein may be performed, removed, or duplicated in different orders, depending on some embodiments.

1B is a flow diagram illustrating an alternative ALD method in accordance with some embodiments of the present disclosure. The method may include providing ( 110 ) a first substrate comprising a first exposed surface and a second exposed surface different from the first exposed surface. The method may include (a) placing a first substrate at a first station ( 120 ). The first substrate can be placed in the first station by a number of approaches, such as a substrate transfer system comprising a transfer member such as a rotating substrate holder or a spider. Optionally, the transfer member is positioned to position the substrate on a stage or susceptor, and one or more removable barriers defining the first station are positioned to position the substrate within the station in a gas isolated state. The substrate may be placed on a lift pin, which may be lowered to position the substrate on a suitable surface. Optionally, the transfer member disposes the substrate on a first substrate transfer mechanism (e.g., a movable stage) in the intermediate space, and the first substrate transfer mechanism moves the substrate into the first station. [0154] Optionally, each substrate transfer mechanism includes a plurality of lift pins configured to extend and lift the substrate from the substrate transfer mechanism in the intermediate space. The lifted substrate can be easily picked up by a transfer member (e.g., a spider) to move the substrate to a different substrate transfer mechanism in the intermediate space. Optionally, after the substrate is placed on the stage or susceptor in the first station, or after the substrate is placed on the first substrate transfer mechanism, the substrate transfer member is retracted into the intermediate space. Alternatively, the first station, for example, be as a reagent and any other stations are provided (for example, the second station described herein) and a gas isolated, placed in a gas isolated state 130. The first station may be placed in a gas isolated state at the same time as or after the substrate is placed in the first station. Alternatively, the first station may be in a gas isolated state at the time the substrate is placed in the first station. In some embodiments, the first station is continuously gas isolated from the second station. The method may include (b) contacting the first substrate in the first station with the first reactant while the first station is in a gas isolated state with the second station substantially free of the second reactant, The first reactant preferentially reacts with the first exposed surface with respect to the second exposed surface such that only a single layer of the first reactant is adsorbed 140 onto the first exposed surface. The first reactant may flow into the first station after the first substrate is placed in the first station, or the first reactant may already be present in the first station when the first substrate is placed in the first station. Optionally, the first reactant is not present in the first station at the time the substrate is placed in the first station. Optionally, after exposure to the first reactant at the first station and before being placed in the second station, the first substrate may be moved to a first station, and / or to a purging position (e.g., ). ≪ / RTI > The method may include (c) placing a first substrate in a second station ( 150 ). Optionally, one or more movable barriers defining the first station are moved to expose the substrate to the intermediate space, and the transfer member (e.g., rotating substrate holder or spider) picks up the substrate and places the substrate on the second stage or susceptor do. The substrate may be placed on a lift pin, which may be lowered to position the substrate on a suitable surface. One or more removable barriers defining the second station may be moved to place the substrate in a gas isolated state within the second station. Optionally, disposing the first substrate in the second station includes moving the substrate to an intermediate space through a first substrate transfer mechanism, e.g., a mobile stage. The lift pin, if present, can be raised to make the substrate accessible to the transfer member. Subsequently, within the intermediate space, the transfer member may move the substrate to a second substrate transfer mechanism (e.g., a second moveable stage) in the intermediate space. The substrate may be placed on a lift pin, which may be lowered to position the substrate on a suitable surface. The transfer member can place the substrate into the second station. Optionally, the substrate may be moved from the first substrate transfer mechanism in the intermediate space to the second substrate transfer mechanism in the intermediate space through a transfer member (e.g., a spider or a rotating substrate holder). Optionally, after the substrate is placed on the stage or susceptor in the second station, or after the substrate is placed on the second substrate transfer mechanism, the substrate transfer member is retracted into the intermediate space. Alternatively, the second station may be placed in a gas isolated state, for example, the second station may be placed in a gas isolated state ( 160 ) with any other station (e.g., a first station) . The second station can be placed at the same time as, or after, the substrate is placed in the second station. Alternatively, the second station may be gas insulated at the time the substrate is placed in the first station. In some embodiments, the second station is continuously gas isolated from the second station. The method may include (d) contacting a first substrate in a second station with a second reactant while the first station is substantially free of the first reactant and the first station is gas isolated from the second station, Is different from the first reactant and only reacts with one single layer of the first reactant on the first exposed surface such that only a single layer of the second reactant is adsorbed 170 on the first exposed surface. The second reactant may flow into the second station after the first substrate is placed in the second station or the second reactant may already be present in the second station when the first substrate is placed in the first station. Optionally, the second reactant is not present in the second station at the time the substrate is placed in the first station. Optionally, after being exposed to the second reactant in the second station and before being placed in another station (e.g., a first station, or a third station), the first substrate may be a second station, and / May be exposed to be purged at a different purge location from the station. The method may include repeating steps (a) through (d) until the desired thickness of film is selectively deposited on the first exposed surface with respect to the second exposed surface, wherein step (b) is virtually free of the second reactant ( 180 ). Optionally, in addition to the surface of the substrate itself, the other surface is not in contact with both the first and second reactants (e.g., the surface of the first and second stations, the gas supply line, the purge line, the susceptor, and / If the member is present, the first and not in contact with both the second reactant) 190. Those skilled in the art will appreciate that the steps listed herein may be performed, removed, or duplicated in different orders, depending on some embodiments.

In some embodiments, at least one process step comprising one or more reactants that are difficult to purge or susceptible to a CVD reaction is performed prior to the step of disposing the substrate in the first station according to some embodiments herein. For example, the substrate is placed in at least one standby station and is contacted with a pre-reactant (or a combination of reactants) that is difficult to purge / difficult or prone to cause a CVD reaction. After the substrate is contacted with the pre-reactant (or a combination of reactants), the substrate is placed in the first station. For example, the substrate may undergo a preliminary passivation step or a preliminary CVD reaction in the standby station. Optionally, the substrate is applied to the purge (at the standby station or in the purge position) after being in contact with the pre-reactant (or a combination of reactants) but before being placed in the first station.

In some embodiments, the substrate is not in contact with the first reactant at any location other than the first station, and the substrate is not in contact with the second reactant at any location other than the second station. As such, the first reactant is not provided at the second station and / or the second reactant is not provided at the first station. Optionally, each station provides only one type of reactant.

It is also contemplated that maintaining a temporary separation between reactants may facilitate maintenance of " gas quenching " in accordance with some embodiments herein and may minimize undesirable CVD reactions. For example, if the first reactant does not flow into the reactor simultaneously with the second reactant, such reactants can be maintained in a transient gas isolation state. For example, in embodiments where the gas wall or gas bearing maintains spatial gas isolation, temporary isolation may further facilitate gas isolation by minimizing or eliminating the effects of traces of gas diffusing out of the station. For example, in embodiments where the physical wall maintains gas isolation, temporary isolation may further minimize or eliminate diffusion or leakage of reactants to other stations. In some embodiments, the gas sequestration involves a temporary separation between the two reactants. In some embodiments, gas sequestration includes physical and temporal separation between two reactants. In some embodiments, all reactants in the ALD process are physically separated. In some embodiments, all reactants in the ALD process are temporarily separated. In some embodiments, all reactants in the ALD process are physically and temporally separated. Maintaining temporary dissociation between reactants can reduce throughput, but according to some embodiments of the present disclosure, reducing process throughput may be advantageous to reduce throughput such that process advantages such as high selectivity, high film quality, and / or reactor life can be achieved. It is possible.

In some embodiments, the first station is purged while the first substrate is in the first station after the first substrate is in contact with the second reactant. The second station may be purged while the first substrate is present after the first substrate contacts the second reactant. Optionally, the first station and the second station include separate purge lines as described herein to minimize the possibility of undesirable CVD reactions between the first and second reactants in the purge line. According to some embodiments of the present application, when the first substrate is exposed to be purged in a station in contact with the reactants, after purging, the first substrate is not placed in an intermediate position, such as a purge position and / or a wafer handling chamber, As shown in Fig.

In some embodiments, after contacting the first substrate in the first station with the first reactant, the substrate is placed in the second station without being placed in an additional position. Examples of additional locations include purge locations and other stations configured to deliver reactants. As long as the substrate can pass through a three-dimensional space (e.g., an " intermediate space ") while moving from a first station to a second station, Thus, in some embodiments, after contacting the first substrate in the first station with the first reactant, the substrate is placed in the second station without being placed in an additional position, and therefore, The substrate is not in contact with any additional reactants after the first reactant and before the second reactant.

In some embodiments, the first substrate is purged at a first purge position after being contacted with the first reactant and before being placed in the second position. The first purge position may be a position that is not in a state of gas communication with the first station. In some embodiments, the first substrate is purged at the second purge location after being contacted with the second reactant at the second location. The second purge position may be a position that is not in a state of gas communication with the second station. In some embodiments, the second purge position is different from the first purge position. In some embodiments, the second purge location is the same as the first purge location.

As described herein, it may be desirable to minimize or eliminate chemical vapor deposition (CVD) -type reactions that can leave undesirable deposition on the reactor surface and / or substrate. Thus, in some embodiments, a substantially CVD-type reaction does not occur on any surface of the first station, wherein a substantially CVD-type reaction does not occur on any surface of the second station. As used herein, " substantially no CVD-type " (including modifications of the root thereof) means that less than 0.1%, preferably less than 0.01% of the reaction involving excess reactants in the reaction space is CVD- . In some embodiments, a substantially CVD-type reaction does not occur on any surface of the reactor. In some embodiments, a substantially CVD-type reaction does not occur on the substrate. In some embodiments, a substantially CVD-type reaction does not occur at the purge line and / or purge location. There will be substantially no CVD-type reactions, even though the first reactant and the second reactant are related to each other in a CVD-type reaction when the substrate is contacted with the first reactant " substantially " . Thus, as used herein, the molar ratio of the first reactant to the second reactant is at least 10,000: 1, such as at least 10,000: 1; 20,000: 1; 30,000; 1, 40,000: 1; 50,000: 1; 75,000: 1; 100,000: 1; 150,000: 1; 200,000: 1, 250,000: 1; 300,000: 1; 400,000: 1, 500,000: 1; 600,000: 1; 700,000: 1; 800,000: 1; 900,000: 1; 1,000,000: 1 or 1,000,000,000: 1 (including the range between any two listed values). As used herein, " substantially free " also includes the complete absence. That is, when the second reactant is completely absent, the reaction is carried out in a state in which the second reactant is virtually absent, but when the second reactant is substantially absent, it need not be completely absent. Thus, as used herein, The phrase " no more than one reactant and no substantially contacted surface (and its variants) " means that each applicable surface (other than the wafer) contacts at most one reactant during the ALD process, The amount of any other reactant to total gas is less than 1: 10,000, such as 1: 10,000; 1: 20,2000; 1: 30,000; 1: 40,000; 1: 50,000; 1: 75,000; 1: 100.00; 1: 150,000; 1: 200,000; 1: 250,000; 1: 300: 000; 1: 400,000; 1: 500,000; 1: 600,000; 1: 700,000; 1: 800,000; 1: 900,000; 1: 1,000,000; Or less than 1: 1,000,000,000 (including a range between any two listed values). It is noted that the phrase " no surface in substantial contact with one or more reactants " (and variations thereof) also includes herein that the surface is not in contact with the reactants or only with one reactant.

According to some embodiments herein, the reduced throughput is believed to be acceptable to minimize or eliminate undesirable CVD reactions. However, in some embodiments it is also contemplated that two wafers may be effectively exchanged between the first station and the second station to minimize or eliminate undesirable CVD reactions while simultaneously using the first and second stations. do. Thus, in some embodiments, the second substrate may be disposed in the first station while the first substrate is not present in the first station, wherein the second substrate is exposed to the third exposed surface and the third exposed surface And a different fourth exposed surface. Since the second substrate in the first station can be contacted with the first reactant (substantially free of the second reactant), the first reactant preferably reacts with the third exposed surface with respect to the fourth exposed surface, , Only one single layer of the first reactant is adsorbed on the third exposed surface. After the second substrate in the first station is contacted with the first reactant and after the first substrate in the second station is contacted with the second reactant, the second substrate can be placed in a second station substantially free of the first reactant Which places the first substrate in the first station substantially free of the second reactant, and thus the first substrate and the second substrate are exchanged. In some embodiments, the first reactant does not react with the fourth surface. In some embodiments, the reactor comprises a plurality of station pairs, and at each station pair, the wafer pairs are repeatedly exchanged until a film of the desired thickness is selectively deposited on each wafer.

According to some embodiments herein, additional ALD reactions may be performed on the substrate, e.g., as part of a dual selective ALD process sequence. Without being limited by any theory, it is believed that the methods and apparatus according to various embodiments of the present disclosure are very useful for dual selective ALD. Dual selective ALDs typically contain two or more reactants (e.g., four or six reactants), so bi-selective ALD can be particularly sensitive to undesirable CVD reactions between different reactants. Thus, by maintaining spatial and / or temporal separation between reactants in accordance with various embodiments herein, it is possible to produce a highly selective, high quality deposited film, and dual selective ALD with minimal or no deposition on the reactor. Additional ALD reactions may be performed at stations other than the first or second station. In some embodiments, an additional non-selective ALD reaction is performed on the substrate. In some embodiments, the additional ALD reaction is selective and provides dual selective ALD on two different surfaces of the substrate. In some embodiments, a first film of a desired thickness is selectively deposited on the first surface of the substrate by ALD, and a different film of a second desired thickness is deposited on the second different surface of the first substrate by ALD (The first and second films may be of the same thickness or may be of a different thickness). Optionally, a second membrane of desired thickness is deposited by shuffling the wafer between a third station providing a third reactant and a fourth station providing a fourth reactant, wherein the third and fourth stations are first And third and fourth reactants are selectively adsorbed on the second surface, thus providing dual selective ALD on the first substrate. In some embodiments, the method further comprises a second selective ALD process that is not on the first surface of the first substrate, but deposits a second thin film on the second surface of the first substrate. For example, the method may comprise a bi-selective ALD.

In some embodiments, the selective ALD reaction is performed in parallel on multiple substrates. In some embodiments, while the steps (a) - (d) are repeated, a third substrate is placed in the third station. The third substrate may include a fifth exposed surface and a sixth exposed surface different from the fifth exposed surface. The third substrate in the third station may be contacted with the first reactant in a substantially absence of the second reactant, wherein the third station is in gas isolation from the first station and the second station (or the substrate is in the third station Wherein the first reactant reacts with a fifth exposed surface other than the sixth exposed surface, and thus one of the first reactants is disposed in a gas isolated condition with the first and second stations, Lt; RTI ID = 0.0 > 5 < / RTI > After the third substrate in the third station is contacted with the first reactant, the third substrate can be placed in the fourth station, wherein the fourth station is connected to the first station, the second station, (Or placed in a gas isolated state with the first, second, and third stations at the same time as or after the substrate is placed in the fourth station). The third substrate in the fourth station can be contacted with the second reactant in the substantially absence of the first reactant, wherein the second reactant comprises one of the first reactants on the fifth exposed surface relative to the sixth exposed surface Only the single layer reacts preferentially, so that only a single layer of the second reactant is adsorbed on the fifth exposed surface. Additionally, in order to achieve a selectively deposited film of desired thickness, the method may be repeated until the desired thickness of film is selectively deposited on a fifth surface other than the sixth surface, 2 contacting the first reactant in a substantially free state with the first reactant and contacting the third substrate in the fourth station with the second reactant in the substantially absence of the first reactant.

Various approaches are suitable for providing gas isolation between stations, e.g. between the first and second stations, in accordance with the present method and reactor. It is also noted that the station may be in a continuously gas isolated state or after the substrate is placed in the station, but the precursor may be placed in a gas isolated state before being provided in the station. In some embodiments, at least one solid material provides gas isolation, such as glass or ceramic or metal or polymer walls, between the first station and the second station. In some embodiments, the gas bearing or gas curtain provides gas isolation between the first station and the second station. In some embodiments, the gas isolation between the first and second stations does not include a gas bearing or gas curtain, but is entirely dependent on the material wall.

In some embodiments, the stations are in a fixed position relative to each other. In some embodiments, the first station is in a fixed position relative to the second station. In some embodiments, the substrate does not move while in contact with the reactants in the station (e.g., while in contact with the first reactant in the first station and / or the second reactant in the second station).

Various methods are suitable for moving the substrate from station to station in accordance with the present method and reactor. In some embodiments, a rotating substrate holder (e.g., including rotating paddles) is provided. Thus, in some embodiments, disposing the first substrate in the second station includes rotating the substrate holder supporting the first substrate to dispose the first substrate in the second station. In some embodiments, a spider is provided. Thus, in some embodiments, the spider places the first substrate in the first station, removes the first substrate from the first station, and places the first substrate in the second station. Optionally, the stations may be fixed relative to one another. In some embodiments, the first substrate is disposed within the substrate holder at the first station, wherein the step of disposing the first substrate in the second station is performed without movement of the substrate holder. In some embodiments, both the rotating substrate holder and the spider are provided.

An example of an approach for moving a substrate from station to station in accordance with some embodiments of the present disclosure is schematically illustrated in Figs. 3-6 . As shown schematically in Figs. 2A-2B , conventional approaches for deposition including a single chamber ( see Fig. 2A ) can include a plurality of process steps in the same chamber ( see Fig. 2B ). As such, the remaining reactants from different process steps may react with one another and cause undesirable CVD reactions. As schematically shown in FIG . 3A , according to some embodiments herein, a substrate may be moved from one chamber to another in accordance with some embodiments of the present disclosure (corresponding process steps are schematically illustrated in FIG . 3B , Lt; / RTI > For example, the first processing step may be performed in the first station, and the second processing step may be performed in the second station. If the first process step comprises a reactant that is difficult to purge and / or reacts with reactants, especially in subsequent process steps, the spatial separation of the first process step and the subsequent process step according to some embodiments herein comprises the first reactant Lt; / RTI >

As schematically depicted in FIG . 4A , according to some embodiments herein, a substrate may undergo two or more process steps at a separate station (e.g., via a first process step at a first station " RC1 "&Quot; placed in the second station " RC2 " for the second process step), and then in the third station " RC3 ". The corresponding process steps are schematically illustrated in Fig. 4c . Conventional approaches involving a single chamber (" RC1 ") typically involve sequentially applying sequential pulses of reactants (e.g., steps 1, 2, 3, and 4) and performing a corresponding purge step in the chamber (E.g., steps 1p, 2p, 3p) ( see FIG. 4b ). It is noted that, depending on the efficiency of the purge, the prior art approach may still result in a CVD reaction between the remaining reactant and the subsequent different reactants. According to some embodiments herein, the substrate is moved to a different station for different reactions so that some or all of the purge does not add processing time. 4C , the substrate can be exposed to four different process steps of station 1, 2 and 3 ("RC1", "RC2" and "RC3", respectively). In some embodiments, the station may be purged after the substrate is exposed to a processing step. Physical separation between reactants can be achieved by keeping the station in a gas isolated state. Alternatively, the substrate may be purged at each station, or in a separate purged position, thus further minimizing the CVD reaction between the different reactants. Optionally, purging can be continued at the same time as or after the substrate is removed from the station. The combination of maintaining the spatial separation between the purge and the reactants is not required to substantially increase the process time relative to the approach shown in Figure 4b , but it is possible to achieve substantially higher selectivity and film quality while minimizing or eliminating CVD deposition on the reactor. It can be calculated. In some embodiments, the reactants continue to flow at each station, and after the substrate is removed from the station, it is placed in the purge position and exposed to the inert gas, so that any trailing reagent is substantially removed from the station. In the example shown in Figure 4 , the station is connected to the central wafer handling chamber and the wafer is transferred from the station to the station through the central wafer handling chamber.

As schematically illustrated in Figure 5 , according to some embodiments herein, the substrate may be repeatedly shuffled between three or more stations (" RC1 "," RC2 "," RC3 "), For example in the context of a dual selective ALD. For example, the substrate may be placed in station 1 (" RC1 ") for a first process step in which a first reactant is in contact with the substrate, and station 2 (" RC2 ") and is located at station 3 (" RC3 ") for at least a third processing step. Optionally, the process can be repeated until a film of the desired thickness is deposited on the desired surface of the substrate. In the example of Figure 5, the station is not connected to the central wafer handling chamber, and the wafer is transported directly from one station to another adjacent station. The station can be placed in a separate reaction chamber separated by a separation valve that can be opened to facilitate wafer transfer. The chambers can be arranged adjacent to each other in a circular structure, so that the last chamber RC3 is adjacent to the first chamber RC1 and the wafer can be moved in the loop.

As shown in FIG . 6 , according to some embodiments herein, the substrate may be repeatedly rotated between multiple stations (e.g., "RC1", "RC2", "RC3", and "RC4"). Alternatively, rotation may be repeated until a film of the desired thickness is formed. Different reactants can be provided to two or more different stations. For example, each station pair may perform a different ALD process, or two or more station pairs may perform the same ALD process. That is, the pair "RC1" and "RC2" can perform "process 1", and the pair "RC3" and "RC4" can perform "process 1" or "process 2". In some embodiments, a first reactant is provided to RC1, a second reactant is provided to RC2, a third reactant is provided to RC3, and a fourth reactant is provided to RC4. Alternatively, in an example of the context of a monoselective ALD process, the first reactant is the same as the third reactant (but different from the second and fourth reactants), the second reactant is the same as the fourth reactant The first and third reactants being different). Alternatively, in an example of a bi-selective ALD context, the first, second, third, and fourth reactants are different from each other.

It is noted that, in some embodiments, two or more station pairs may provide the same reactant (e.g., RC1 and RC2 provide first and second reactants, respectively, and RC3 and RC4 provide first and second reactants, respectively to provide). As such, a number of deposition cycles may include " spinning " the substrate between two pairs of stations (e.g., through the RC1->RC2->RC3-> RC4 cycle) Quot; swap " the substrate (repeatedly circulating substrate # 1 between RC1 and RC2). The exchange is schematically illustrated in Figure 7a . The rotation is schematically illustrated in Figure 7B . It should be noted that although the two stations provide the same reactants under the same conditions, there may be slight differences in the properties of the deposited films as there may be minor differences. Thus, in some embodiments of the present application, the substrate is moved from station to station via an exchange (e.g., substrate # 1 is at RC1, substrate # 2 is at RC2, And substrate # 1 is in RC1).

In some embodiments, two or more station pairs perform the same deposition process on two or more substrates in parallel. For example, substrate # 1 is contacted with a first reactant in RC1 and substrate # 2 is contacted with a first reactant in RC2. Substrate # 1 is then exchanged into RC3, then substrate # 2 is exchanged into RC4, and the second reactant is provided to RC3 and RC4. The deposition cycle is repeated by (a) exchanging substrate # 2 between RC1 and RC2 until a film of the desired thickness is achieved, and (b) exchanging substrate # 2 between RC3 and RC4 until a film of the desired thickness is achieved . Optionally, the substrates are in pairs in each station, and each pair of substrates is interchanged (e.g., substrate # 1 is at RC1, substrate # 2 is at RC2, substrate # 3 is at RC3, 4 are in RC4, substrate # 1 and substrate # 2 are exchanged with each other, and substrate # 3 and substrate # 4 are exchanged with each other).

In some embodiments, the first reactant does not flow into the first station as the second reactant flows into the second station. In some embodiments, the first reactant continues to flow into the first station and / or the second reactant continues to flow into the second station. Optionally, after being placed in the station and contacting the continuously flowing reactants, the substrate is placed in the purge position for purging before being placed in a subsequent station.

In some embodiments, the first substrate is exposed to the first reactant in the first station at a different pressure than the pressure at which the first substrate is exposed to the second reactant at the second station. For example, a pressure differential of at least 0.5 times between the first station and the second station, for example, 0.5-fold, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 8, 9, 10, 15, 20, 25, 20, 40, or 50 times the pressure difference. In some embodiments, the first station is at a higher pressure than the second station. In some embodiments, the second station is at a higher pressure than the first station.

Substrate and deposition chemistry

Various substrate and deposition chemistries may be used in accordance with the embodiments herein.

In some embodiments, a single selective ALD is performed. In some embodiments, dual selective ALD is performed. The dual selective ALD can be used to selectively deposit a first film on a first exposed surface of a substrate (e.g., a dielectric) and selectively deposit a second different film on a second different exposed surface of the substrate . Alternatively, the deposition of the first thin film on the first exposed surface can be repeated until the first film of the desired thickness is achieved, and the deposition of the second thin film on the second surface is achieved by the second film of the desired thickness Can be repeated until. In some embodiments, the first film of desired thickness is completed (e.g., the deposition of the first film is repeated several times), and then the second film is deposited (e.g., the deposition of the second film is repeated a number of times). In some embodiments, alternate deposition of the first and second films is performed (e.g., the deposition of the first film is repeated one or more times and the deposition of the second film is repeated one or more times) Is repeated.

In some embodiments, Ru is selectively deposited on the first exposed surfaces of the substrate (e.g., metal), a SiO ₂ or GeO ₂ is selectively deposited on the second exposed surface of the substrate (e.g., dielectric) . For example, the first station pair may provide Ru to the first station and an oxygen source (e.g., O ₂ or O ₃ or O ₂ plasma) to the second station, the second station may provide Si or Ge precursor to the third station, 4 stations. Optionally, a passivating agent may be provided to the fifth station, which passivates the SiO2 or GeO2 surface for Ru deposition, and the passivating compound is a silylated compound. Examples in which Ru is selectively deposited on a first exposed surface of a substrate and SiO ₂ or GeO ₂ is selectively deposited on a second exposed surface according to some embodiments of the present disclosure are shown in Figures 8a to 8c . Figure 8a shows a dual selective ALD process in two chambers, one chamber for the Ru ALD deposition process and another chamber for the SiO2 or GeO2 ALD process and passivation process. The Ru oxygen source cycle is repeated x times followed by a Si or Ge oxidation cycle followed by a passivating treatment. The entire cycle is repeated y times until a film of the desired thickness is obtained. Figure 8ba To 8bd illustrate exemplary process steps in accordance with some embodiments of the present disclosure. Figure 8c to Figure 8d shows an exemplary process chemistry and adsorption and reaction steps according to some embodiments of the present application. Without wishing to be bound by any theory, it is believed that according to some embodiments of the present invention, HCOOH may simply remove residual O radicals from the Ru surface such that the HCOOH may not remain on the Ru surface.

In some embodiments, Sb is selectively deposited on a first exposed surface of a substrate (e.g., metal) and W is selectively deposited on a second exposed surface of a substrate (e.g., dielectric). 9 schematically illustrates various process flows for an Sb / W pair in accordance with some embodiments of the present disclosure. The substrate can be freely transported between the four stations depending on the number of reaction cycles required for deposition of the W and Sb layers.

Reactor

Other reactors in some embodiments of the present invention include a first station and a second station that are gas isolated from each other (or, alternatively, the reactor may be configured such that a given station is placed in a given station, Wherein the first station is in gas communication with the first reactant source and the second station is in gas communication with the second reactant source and the first and second reactants are different from each other. The reactor may further include a controller set to control the movement of the substrate from the station to the station, the flow of reactants into the station, and / or the purging of the station and / or purge position. In some embodiments, the reactor comprises an ALD reactor. In some embodiments, the ALD reactor is configured for selective ALD, such as single-selective ALD or dual-selective ALD.

The reactor may be configured for ALD on the substrate. The reactor may include a first station configured to include a first substrate wherein the first station is configured to contact the first reactant, wherein the first reactant reacts with the first substrate to form a first Only one single layer of reactant is adsorbed on the surface of the first substrate. The reactor may comprise a second station in a gas isolated state with the first station (or arranged so as to be gas isolated from the first station at the same time as or after the substrate is placed in the second station) Comprises a first substrate and the first substrate is configured to contact a second reactant in the substantially absence of the first reactant, wherein the second reactant is different from the first reactant and reacts only with a single layer of the first reactant So that only a single layer of the desired material is formed on the first exposed surface.

The reactor may further include a substrate transfer system configured to position the first substrate in the first station and subsequently to position the substrate in the second station after the first substrate is contacted with the first reactant. The reactor may comprise an intermediate space ( see FIG. 17 , which also refers to a " intermediate space " according to some embodiments of the present invention, also referred to as a " substrate transfer space "). The substrate transfer system may include a substrate transfer member, such as a spider, configured to move the substrate into the intermediate space. In some embodiments, the movable barriers defining the station are moved, the substrate is exposed to the intermediate space, the transporting member transports the substrate to the other station through the intermediate space, and then the gas is isolated through the movable barrier . In some embodiments, the substrate transfer system of the reactor comprises at least one substrate transfer mechanism (e.g., a mobile stage), wherein each substrate transfer mechanism is coupled to only one station, Can be shuttled. As such, the transport mechanism for each station can move the substrate from the particular station to the intermediate space, or from the intermediate space to the station. For example, a mobile stage may raise or lower a substrate between intermediate spaces and a station associated with the particular mobile stage. In some embodiments, a stage or susceptor in a station configured to receive a substrate transfer mechanism, or substrate, includes a plurality of lift pins. When the lift pins are extended, the substrate placed on the extended lift pins can easily access the substrate transfer member (e.g., spider) for pick-up or drop-off. When the lift pin retracts, the substrate may be positioned on an appropriate surface (e.g., the surface of the stage or susceptor). In the intermediate space, the substrate may be moved through another place, or in a substrate transfer mechanism to another place in a (e. G., A mobile stage), for example, rotating the substrate transfer member, for example a spider at a station (e.g. see FIG. 10 ). Optionally, each substrate transfer mechanism (e.g., a mobile stage) includes a plurality of lift pins configured to extend and lift the substrate from a substrate transfer mechanism in the intermediate space. The lifted substrate can be easily picked up by a transporting member, such as a spider, to move the substrate to a different substrate transport mechanism in the intermediate space. Optionally, after placing the substrate on a station (e.g., susceptor or stage) or a substrate transfer mechanism associated with the station, the substrate transfer member is retracted into the intermediate space. Thus, the substrate transport system can move the substrate between different stations, but the surface of the substrate transport system is not exposed to more than one station or reactants therein. That is, each portion of the substrate transfer system may be substantially exposed to only one reactant (e.g., a substrate transfer mechanism, e.g., a mobile stage) or may be substantially unexposed to a reactant (e.g., a substrate transfer member, have. It is believed that exposing each surface to only one reactant can minimize undesirable ALD and / or CVD reactions on that surface. The reactor may be configured to place the first substrate in the first station after contacting the first substrate with the second reactant under the control of a controller as described herein, for example. Optionally, the reactor is configured to repeat the process until a film of the desired thickness is deposited on the exposed surface. Alternatively, the surface of the reactor is not in contact with both the first and second reactants (e.g., the surfaces of the first and second stations, the gas source line, the purge line, the substrate transfer member, the susceptor, and / Does not contact both the first and second reactants, if present). However, it is noted that the substrate may be contacted by both the first and second reactants.

In some embodiments, the reactor is configured for selective ALD on a first substrate comprising two different exposed surfaces. The reactor may include a first station configured to include a first substrate comprising a first exposed surface and a second exposed surface, wherein the first station is configured to contact the first substrate with the first reactant, Wherein the first reactant preferentially reacts with the first exposed surface with respect to the second exposed surface such that only a single layer of the first reactant is adsorbed on the first exposed surface. The reactor may include a second station in a gas isolated state with the first station (or may be placed in a gas isolated state with the first station at the same time as or after the substrate is placed in the second station), wherein The second station comprises a first substrate and the first substrate is configured to be in contact with a second reactant in the substantially absence of the first reactant, wherein the second reactant is different from the first reactant and the second reactant 1 preferentially react with one single layer of the first reactant on the exposed surface so that only a single layer of the desired material is formed on the first exposed surface. The reactor may further include a transfer member configured to place the first substrate in the first station and subsequently to place the substrate in the second station after the first substrate is contacted with the first reactant, And to place the first substrate in the first station after contacting the first substrate with the second reactant. Optionally, the conveying member comprises a spider. Optionally, the transfer member comprises a rotating member, for example a rotating substrate holder. Contacting the first substrate in the first station with the first reactant in the substantially absence of the second reactant and contacting the first substrate in the second station with the second reactant in a substantially absence of the first reactant May be further configured to repeat until the film of the desired thickness is selectively formed on the first surface rather than the second surface. Optionally, the transfer member is configured to move the substrate between two or more different pairs of stations. Optionally, the transfer member is configured such that the substrate is repeatedly exchanged between a particular pair of stations. The ALD reactor is configured to move the substrate through the transfer member to the first station, to direct the first station to contact the first reactant, move the substrate to the second station via the transfer member, And may be further configured to direct the second station to contact the second reactant. Optionally, the reactor is configured to perform selective deposition on two or more parallel wafers. For example, two or more wafers may be selectively processed in two or more different station pairs. For example, a pair of wafers may be selected simultaneously in the same pair of stations (thus wafer # 1 starts at station # 1, wafer # 2 starts at station # 2, and wafer # 1 is then exchanged with wafer # 2 , The exchange is repeated until a film of the desired thickness is formed).

In some embodiments, the reactor comprises at least two station pairs, such as at least 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 , 20, 25, 30, 35, 40, 45, or 50 station pairs (including a range between any two listed values). Optionally, some or all of the stations are ecologically constantly gas isolated from each other. Optionally, some or all of the stations may be placed in gas isolation from each other by, for example, surrounding the substrate within the physical barriers described herein, before, after, or after the substrate is placed in the station . The reactor can be configured to hold as many wafers as there are stations, or alternatively, fewer wafers than there are stations. In some embodiments, the ratio of the number of wafers to the number of stations processed by the reactor is less than 1: 1, such as 0.9: 1, 0.8: 1, 0.7: 1, 0.6: 1, 0.5: , 0.2: 1, 0.1: 1, 0.05: 1, or less than 0.01: 1 (including the range between any two listed values). Optionally, the rotating substrate transfer member is configured such that the substrate is stationary in at least one station (e.g., such that the substrate does not move continuously during the deposition process). An exemplary arrangement of stations according to some embodiments of the present disclosure is shown in Figures 5,6, 10,11A-11C, 14A-14C, 18, and 19A .

Optionally, the reactor is configured for linear movement of the substrate. For example, linear movement between a series of stations may be compatible with " swap " or " rotate " the substrate as described herein.

As used herein, a " substrate transfer member " or " transfer member " moves a substrate from a first station (or from a transfer mechanism associated with a first station) to a second station (or to a transfer mechanism associated with a second station) Such as a rotatable member or a spider. In some embodiments, the transport system includes a transport member including a spider. A " spider " as used herein refers to a wafer transfer member having a plurality of arms, each arm configured to engage a wafer via a spider end effector. The spider may be centrally located for multiple reaction stations. An exemplary spider in accordance with some embodiments of the present application is shown in FIG. 10 is for a four reaction station (201, 202, 203, and 204) showing the spider 200 disposed in the center Fig. The spider has four arms 205 , each arm having a spider end effector 206 for coupling to the wafer. When the wafer needs to be transferred, the wafer is raised by a lift pin or similar structure, and the spider 200 is rotated so that the spider end effector 206 is below the wafer and the spider end effector is coupled to the wafer. The spider then rotates by more than 90 degrees (or another value if there are a different number of stations; for a station evenly distributed, the value can be 360 degrees divided by the number of stations), the spider end effector 206 are separated from the wafer leaving the wafer on the surface (e.g., on a susceptor in the station, or on a substrate transfer mechanism as described herein), which is also similar to a lift pin or similar Structure. The spider 200 can then be moved to an intermediate position between the stations 201, 202, 203, 204 so that when the stations are gas isolated from each other, the spider or any component thereof Not exposed. Optionally, a further end effector 207 may move the wafer out of the cluster of reaction stations into the wafer handling chamber, the load lock chamber, and / or another reaction station cluster. It should be noted that, in the case of the substrate transfer system, the surface of the reactor is not in substantial contact with the two different reactants. For example, the substrate itself may be in substantial contact with two or more different reactants, and the spider is substantially in contact only with one reactant (or, in some embodiments, the spider does not contact substantially any reactants) .

In some embodiments, the substrate transfer system includes a plurality of " substrate transfer mechanisms " wherein each substrate transfer mechanism is associated with only one station, and between the particular station and the intermediate space, Shuttleing can be done. Optionally, each substrate transfer mechanism (e.g., a mobile stage) includes a plurality of lift pins configured to extend and lift the substrate from a substrate transfer mechanism in the intermediate space. The lifted substrate can be easily picked up by a transporting member, such as a spider, to move the substrate to a different substrate transport mechanism in the intermediate space. As such, each substrate transfer mechanism is exposed to only one station and thus is substantially exposed to only one reactant (or process step). In some embodiments, each substrate transfer mechanism includes a movable stage.

FIG. 16 shows a cross-sectional view of a process module (PM) 300 having a plurality of reactor chambers (RC) 310 , 311 that are gas isolated from one another according to some embodiments herein. Since one or more stages 320 , 321 can be moved (e.g., up and down), the PM can include intermediate space ( see 315 in FIG. 17 ). As shown in FIG. 16 , each stage 320 (or 321 ) is positioned (to the "upper" position) so that each of the surfaces 330 , 331 and stages 320 , 321 of the PM And defines RCs 310 and 311 including a single station. Alternatively, the stages of the various stations can be moved between their specific stations and the single intermediate space, so that the substrate can be moved from the intermediate space to any station and placed in the intermediate space of any station. As such, the intermediate space according to some embodiments herein allows for substrate transfer between PM and WHC or between each stage in the PM (see FIG. 18 ). In some embodiments, the reactor is equipped with one or more substrate transfer systems, one for transferring the LLC-PM and the other for RC-RC transfer within the PM. Each RC in the PM (each RC includes a different station) is equipped with a system that can independently control gas, pressure, temperature, RF, and other parameters as needed.

17 is a diagram showing a cross section of a process module (PM) 305 including an intermediate space 315 ; According to some embodiments of the present application, the stages 320 and 321 , which correspond to the various stations, respectively, may be moved between their particular station (e.g. RC 310 , 311 ) and the single intermediate space 315 , 315 to any station 310, 311 and may be located in an intermediate space 315 from any station 310, As shown in Fig. 17 , Each stage 320 and 321 is arranged to provide an intermediate space 315 (in the " down " direction) between the stages 320 and 321 and the surfaces 330 and 331 of the PM. As such, the intermediate space 315 in accordance with some embodiments of the present disclosure allows substrate transfer between the PM and the WHC, or between each stage 310 , 311 in the PM.

19A shows a reactor configuration according to some embodiments of the present invention wherein the central WHC is coupled to a PM containing three RCs in a gas isolated state (e.g., each RC includes a different station) The RC of which has a process stage therein. At the center of the PM, a stage-stage transfer mechanism including a spider is also provided as part of the substrate transfer system. Each stage can be raised or lowered to allow the stage to move between the chamber and the intermediate space, and the spider can rotate the substrate between different stages in the intermediate space. As such, the substrate transport system can transport the substrate by up / down and rotational movement. Figure 19b shows a sequence with three different processes on three wafers at the same time (as shown in Figure 12 , for example). 19B , Three different processes are repeated by rotation on three substrates at the same time. The three substrates can be roughened continuously (e.g., each substrate undergoes one process at any given time) to minimize the " atmospheric " step according to some embodiments herein. . Note that the process of FIG. 19B includes a small number of RC " wait " steps to provide a substantially more efficient sequence as compared to the conventional case shown in FIG . 13 for all RCs to operate and at least for this reason .

Without being limited by any theory, the substrate processing time is generally longer than the transfer time. According to some embodiments herein, the substrate processing time is considered to be longer than the transfer time. In Fig. 20 , the total sequence time for different process times is simulated. The total sequence time T is compared between conventional tools and the present invention. T is plotted for the variable time ratio n (n = 1 to 7) of the process / transfer. The simulation was performed under the precondition of repeating three different processes x 3 times on three substrates. T is given by the formula T = 39n + 39 for a conventional tool ( see , e.g., FIG. 13 ) and given as T = 15n + 18 for the reactor and process according to some embodiments of the present application, as in FIG. 19b . It is noted that the process according to some embodiments herein reduces the sequence time T by about 60% and provides about 2.5 times more efficient productivity. It should be noted that, in accordance with some embodiments of the present application, Figure 20 provides increased productivity regardless of process time length, so that processes and reactors according to some embodiments herein can yield high efficiencies regardless of process time length.

Figure 21 shows the sequence time T when m different types of processes are repeated for m substrate pieces (m = 1-5) x 5 times according to some embodiments of the present application. In this simulation, the process / transfer time ratio is fixed at 2 (n = 2). T is given by the formula T = 12m < 2 > + 3m for conventional tool geometry ( see , e.g., FIG. 13 ) and given by T = 16m for the reactor and process according to some embodiments of the present application, as in FIG . The graph shows that m is getting better as more numbers are taken (i.e., as more diverse types of processes are performed as compared to the conventional approach, the conventional configuration has a larger RC wait state, The configuration according to the embodiment is more advantageous).

Additional examples of reactor configurations in accordance with some embodiments of the present disclosure are shown in Figures 11A-11C . In some embodiments, the reactor comprises any of the configurations of Figures 11A-11C , or a combination of two or more such configurations.

In some embodiments, the transport system includes a rotating substrate holder configured to remove the first substrate from the first station and place the first substrate in the second station by rotation. Optionally, the ALD reactor comprises a rotary indexing reactor. The rotary indexing reactor may include a rotating member, such as a table, configured to rotate one or more substrates between a plurality of stations. Optionally, the rotating member can be driven by a servomotor.

Optionally, the station of the ALD reactor comprises a showerhead or showerhead pseudo-distributor configured such that the reactants flow from the center to the edge of the substrate. Distributing the reactants in this manner can minimize or eliminate edge effects, which is believed to be a feature of the cross-flow design. The rotary reactor maintains the station in gas isolation. Optionally, the rotary indexing reactor is maintained in a gas isolated state by a physical wall or other physical barrier. Optionally, the rotary indexing reactor does not rely on the gas bearing or gas wall to maintain the gas isolated condition. Alternatively, the rotary indexing reactor may be equipped with at least two stations, such as at least 2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, (Including a range between any two listed values). Optionally, the rotary indexing reactor may have various indexes and residence times. In some embodiments, the index time of the indexing reactor is configured for a particular time for a certain number of degrees of rotation, and thus the duration of the index time depends on the number of wafers (e.g., in some embodiments, 100 msec / Index time, it becomes 60 degrees per substrate which calculates the index time of 200 msec in the case of the rotating member including six substrates). Note that the faster the rotational speed of the rotary indexing reactor, the shorter the time consumed by the substrate during transfer from the station to the station. In some embodiments, the indexing rate does not depend on the deposition time (e.g., if the deposition time is relatively short and the purge time is rate-limiting). Thus, in some embodiments, the rotary indexing reactor provides a total capacity of reactants for each of the wafers, regardless of radial position relative to the platen center of rotation. In some embodiments, the rotary indexing reactor is characterized by providing at least one of a large batch, high throughput, flexibility for multi-component membranes, ability to control particles and / or possibilities for PEALD processes.

In some embodiments, the ALD reactor is configured to prevent simultaneous presence of substantial amounts of the first reactant and the second reactant at any station of the ALD reactor. For example, each station may include a barrier, such as a physical barrier as described herein, and / or a gas barrier to maintain separation. For example, each station may include a physical barrier as described herein but does not include a gas barrier to maintain separation. Optionally, the ALD reactor comprises one or more scavengers. It is believed that scavengers can further enhance gas isolation. For example, a gas scavenger including a vacuum can provide any reactants that have escaped the station, and the escaped reactants can be prevented or minimized from entering other stations. In some embodiments, the scavenger is located between the stations. In some embodiments, the scavenger is located adjacent to the station. In some embodiments, the station includes a scavenger.

In some embodiments, the ALD reactor further comprises a purge location configured to receive the first substrate after the first substrate is in contact with the first reactant, but before the first substrate is placed in the second station. The purge location may be configured to perform purging of the first substrate therein. The purge position may not be in a state of gas communication with the first station and is not in a state of gas communication with the second station. In some embodiments, the first station is configured to purge the first reactant after the first substrate contacts the first reactant and before the first substrate is placed into the second station. In some embodiments, the first station performs purging while the first substrate is within the first station. In some embodiments, the initial portion of the purge is performed at the first station while the first substrate is inside the first station, the substrate is removed from the first station while being purged and transferred to the purge station, (E.g., if the first reactant has a characteristic long purge time).

Without being limited by any theory, it is believed that maintaining gas isolation between stations as described herein is capable of minimizing or eliminating undesirable CVD reactions. Thus, in some embodiments, the ALD reactor is configured to substantially prevent the CVD reaction from occurring on any surface of the first and second stations of the ALD reactor.

In some embodiments, the stations of the ALD reactor are fixed relative to one another. Alternatively, the substrate may be removed and placed in various stations while the station remains stationary. Optionally, the station can be moved relative to the substrate, but maintains a fixed position relative to each other. In some embodiments, the substrate is moved from the station to the station, but does not move when contacting the reactants at the station.

In some embodiments, the controller includes a processor that provides instructions to the first station and / or moves the substrate to the second station via the transfer system. The processor may further provide instructions to direct the first station to contact the first reactant. The processor may further provide instructions to direct the second station to contact the first substrate with the second reactant. The processor can further direct each station to provide reactants at a specific temperature (or temperature range) and / or pressure (or pressure range). The processor may further provide a command to cause the susceptor to heat the substrate to a certain temperature, or to cause the substrate to cool to a certain temperature. The processor may further provide instructions to purge the station, for example by blowing an inert gas into the station and / or applying a vacuum to the station. The processor may further provide instructions to position the purge, for example, by blowing an inert gas to the purge location and / or applying a vacuum to the purge location to provide purge while the substrate is in it.

In some embodiments, the ALD reactor is configured to automatically repeat the deposition cycle until a film of desired thickness is obtained. As such, the ALD reactor can be configured to repeat one or more deposition cycles without the intervention of an operator, such as a human operator.

In some embodiments, the ALD reactor is configured to treat two or more substrates simultaneously in different pairs of stations. The pair can be configured to perform the same or different ALD processes. In some embodiments, the ALD reactor includes a third station in a gas isolated state with the first station and the second station (or, alternatively, at a time when the substrate is placed in the third station, And the third station is configured to hold a second substrate comprising a third exposed surface and a fourth exposed surface. The third station may be configured such that the second substrate is in contact with the first reactant so that only a single layer of the first reactant is adsorbed on the third exposed surface. The ALD reactor may also include a fourth station that is gas isolated from the first station, the second station, and the third station (or alternatively, the first, second, , And a third station, wherein the fourth station is configured such that the second reactant is in contact with the second reactant in a substantially absence of the first reactant, wherein the second reactant is in contact with the fourth Reacts only with one single layer of the first reactant on the third exposed surface that is not the exposed surface and thus only one single layer of the second reactant is adsorbed on the third exposed surface.

In some embodiments, the ALD reactor is configured for single selective ALD, and thus the first film is selectively deposited on the first surface of the substrate. In some embodiments, the ALD reactor is configured for dual selective ALD, so that the first film is selectively deposited on the first surface of the substrate and the second different film is selectively deposited on the second different surface of the substrate Lt; / RTI > In some embodiments, the ALD reactor further comprises a third station in a gas isolated state with the first station and the second station (or, alternatively, at a time when the substrate is placed in the third station, The third station is configured to include a first substrate wherein the third station is configured to contact a third reactant that is different from the first and second reactants, Thereby, only one single layer of the third reactant is adsorbed on the second exposed surface of the substrate. The ALD reactor may further include a first station, a second station, and a fourth station in a gas isolated state with the third station (or at a time when the substrate is placed in the fourth station, And a third substrate, wherein the first substrate is configured to include a first substrate, wherein the first substrate is different from the first, second, and third reactants, and the first , The second reactant is configured to be in contact with the fourth reactant in the substantially absence of the second and third reactants wherein the fourth reactant reacts with only one single layer of the third reactant other than the first exposed surface, Only one single layer is adsorbed on the second exposed surface.

Additional Embodiment

In the semiconductor and LCD industries, methods of making different processes on a substrate without exposure to air are often performed. Also, multiple processes with different process conditions (e.g., gas flow, pressure and / or temperature) are often repeated alternately on the substrate. For example, according to some embodiments herein, the deposition process is performed with a combination of processes such as deposition, etch, and surface pre- / post-process. Figure 12 illustrates an example of repeating three different processes by rotating one substrate, in accordance with some embodiments of the present disclosure.

Figures 13a and 13b illustrate an example of a conventional tool type that is a central wafer handling chamber (WHC) in combination with a load lock chamber (LLC) and a reactor chamber (RC) for performing a process on a substrate, The process in the reaction chamber may be of the same type. When performing multiple process depositions (e.g. , the process shown in FIG . 12 ) using conventional tools, the other RCs are in a standby state while only one RC (or RC unit) is used at a time ( see FIG. 14 , 13A and 13B for repeating the three different processes as shown in FIG. 12 ).

Fig from: (US 6469283 B1 a method and apparatus for reducing thermal gradients in the substrate support) 15 shows another form of prior art tools. In this form, multiple process stages are located within the multiple modules PM. Although different processes are performed simultaneously on different stages using this form, this configuration has four process stages in the PM, but each process area is not substantially separated. Therefore, the form of 15, especially when the process is carried out under vacuum, it is considered that does not prevent the intervention of the processing conditions such as the pressure between the gas stream and each of the process space. As such, it is believed that the above conventional tools and approaches are not configured to perform well separated processes by PM under different conditions. In addition, different process gases meet at a conventional vacuum exhaust port located below the process stage. This structure allows for an undesirable gas mixture in different processes that can potentially cause particle problems and safety problems due to byproduct formation.

In some embodiments, substrate processing equipment is provided that includes one or more processing modules (PM) in which a plurality of stations are in gas isolation from each other. The station may include a reaction space. The substrate processing equipment may include at least two substrate transfer systems, one for transferring substrates between the load lock chamber (LLC) and the PM, and the other for transferring substrates between process stages in the PM. The process stages in the PM can be configured to configure the station to be gas isolated for processing and to place the substrate in one intermediate space for transport between the stations. In some embodiments, a station that is in a gas isolated state (e.g., a substantially discrete RC) in the PM has separate control capabilities of process parameters such as gas, pressure, temperature, RF, and other parameters as needed. In some embodiments, the PM is configured for gas isolation between stations during at least the process step, which operates to effectively prevent interference between the stations (and / or have a plurality of stations of the same function therein). Optionally, the PM can be operated in at least two different processes (or in a plurality of stations having the same function) in a gas isolated state from each other by independently controlling process conditions such as gas, temperature, pressure, RF and other parameters as needed It has the ability to perform simultaneously.

Example: TiC deposition

TiC deposition in a showerhead reactor suffers from deposition of low quality layers on the showerhead surface. This layer is considered to be the cause of undesirable grain formation in some processes. Deposition of this low quality layer can be avoided by placing the substrate in the first station and adsorbing only a single layer of titanium reactant, such as TiCl ₄ , on the exposed surface of the substrate. Subsequently, the first station is purged into the substrate. The substrate is then lowered from the first station to the intermediate space via the mobile stage. In the intermediate space, the spider rotates the substrate to a second movable stage associated with the second station. The second movable stage then raises the substrate into the second station and locks the second station in a gas isolated state so that the substrate is placed in the second station in a gas isolated state from the first station. In the second station, the organometallic Al precursor reacts with Ti on the substrate surface. The second station is then purged and the substrate is removed from the second station. The substrate is exchanged (through the substrate transport system) between the first and second stations until a TiC film of desired thickness is formed.

While this disclosure has been provided in the context of specific embodiments and examples, those skilled in the art will readily appreciate that the present disclosure extends beyond the specifically described embodiments to the use of other alternative embodiments and / or examples and that variations and equivalents thereof are obvious I will understand. In addition, while several different embodiments of the present disclosure have been shown and described in detail, other variations that are within the scope of this disclosure will be readily apparent to those skilled in the art based on this disclosure. It is also contemplated that various combinations and subcombinations of certain features and aspects of the embodiments may be made and still fall within the scope of the present disclosure. It is to be understood that the various features and aspects of the disclosed embodiments may be combined or substituted with one another to form the various modes of embodiments of the present disclosure. Accordingly, the scope of the present disclosure should not be limited by the specific embodiments described above.

The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims (48)

With the selective atomic layer deposition (ALD) method of thin films,
Providing a first substrate comprising a first exposed surface and a second exposed surface different from the first exposed surface;
(a) disposing the first substrate at a first station;
(b) contacting a first substrate in the first station with a first reactant while the second reactant is substantially absent and the first station is in a gas isolated condition with the second station, Reacting preferentially with said first exposed surface with respect to a second exposed surface such that only a single layer of said first reactant is adsorbed to said first exposed surface;
(c) placing the first substrate in the second station after contacting the first substrate in the first station with the first reactant;
(d) contacting the first substrate in the second station with the second reactant while the first reactant is substantially absent and the second station is in a gas isolated state with the first station, Reactant being different from the first reactant and reacting with one single layer of the first reactant on the first exposed surface; And
Repeating steps (a) through (d) until a first film of desired thickness is selectively deposited on the first exposed surface with respect to the second exposed surface. 2. The method of claim 1, wherein the first station does not provide any reactants other than the first reactant, wherein the second station does not provide any reactants other than the second reactant. 2. The method of claim 1 wherein each surface of the first station is substantially free of the second reactant throughout the process, wherein each surface of the second station is substantially free of the first reactant throughout the process Way. The method of claim 1, wherein the first station is within the first station while the first station is in a gas isolated state from the second station. 2. The method of claim 1, wherein the first station is in a gas isolated condition with the second station before placing the first substrate in the first station. The method of claim 1, further comprising: purging the first station while the first substrate is in contact therewith after contacting the first substrate with the first reactant, and contacting the first substrate with the second reactant And purging the second station while the first substrate is in it. The method of claim 1, wherein a chemical vapor deposition (CVD) reaction does not substantially occur on any surface of the first station, wherein the CVD reaction does not substantially occur on any surface of the second station. The method of claim 1, wherein after contacting a first substrate in the first station with the first reactant, the substrate is disposed in the second station without being disposed in an intermediate position. The method according to claim 1,
Placing the first substrate in the purging position after contacting the first substrate in the first station with the first reactant and before contacting the first substrate in the second station with the second reactant,
Further comprising the step of causing an inert gas to flow into the purge position while the first substrate is in the purge position; And
Wherein the purge position during purging is not in a state of gas communication with the first station but in a state of gas communication with the second station. The method according to claim 1,
Disposing a second substrate in the first station while the first substrate is not present in the first station, the second substrate having a third exposed surface and a fourth Comprising an exposed surface;
Contacting a second substrate in the first station with the first reactant and the second reactant in a substantially free state, wherein the first reactant reacts with the third exposed surface and not with the fourth exposed surface Wherein only a single layer of the first reactant is adsorbed on the third exposed surface;
After contacting the second substrate in the first station with the first reactant and after contacting the first substrate in the second station with the second reactant, Two stations and placing the first substrate in a first station substantially free of the second reactant so that the first substrate and the second substrate are exchanged. The method of claim 1, wherein the cycles (a) to (d)
(e) placing the first substrate in a third station;
(f) contacting the first substrate in the third station with the third reactant while the first and second reactants are substantially absent and the third station is in a gas isolated state with the first station and the second station Further comprising:
(E) to (f) may be performed before and after (a) to (d), wherein a first film of desired thickness is selectively deposited on the first exposed surface with respect to the second exposed surface (A) to (d) are repeated in combination with (e) to (f). The method of claim 1, wherein during the repeating (a) to (d)
Disposing a third substrate in a third station, wherein the third substrate comprises a fifth exposed surface and a sixth exposed surface different from the fifth exposed surface;
Contacting a third substrate in the third station with a first reactant in the substantially absence of the second reactant, wherein the third station is gas isolated from the first station and the second station, The first reactant reacts with the fifth exposed surface but not with the sixth exposed surface such that only a single layer of the first reactant is adsorbed on the fifth exposed surface;
Placing the third substrate in a fourth station after contacting a third substrate in the third station with the first reactant, wherein the fourth station is in contact with the first station, the second station, Station and gas isolation;
Contacting a third substrate in the fourth station with a second reactant in the substantially absence of the first reactant, wherein the second reactant is only present with one single layer of the first reactant on the fifth exposed surface Reacting; And
Contacting a third substrate in the third station with the first reactant in a substantially free state of the second reactant until a second film of desired thickness is selectively deposited on the fifth surface other than the sixth surface And repeating the step of contacting the third substrate in the fourth station with the second reactant in a state substantially free of the first reactant. The method of claim 1, wherein at least one solid material provides gas isolation between the first and second stations. The method of claim 1, wherein the gas provides gas isolation between the first and second stations. 2. The method of claim 1, wherein the first station is in a fixed position relative to the second station. 2. The method of claim 1, wherein disposing the first substrate in the second station comprises rotating a substrate holder holding the first substrate and disposing the first substrate in the second station Way. 2. The method of claim 1 wherein a spider places the first substrate in the first station and the first substrate in the second station. 18. The method of claim 17, wherein after the spider places the first substrate in each station, the spider is retracted from the station so that the spider does not contact any reactants. 2. The method of claim 1, wherein the first substrate is disposed in a substrate holder at the first station, wherein placing the first substrate in a second station is performed without movement of the substrate holder. The method of claim 1, wherein each station provides only one single reactant. 2. The method of claim 1, wherein the first reactant does not flow into the first station simultaneously with the second reactant flowing into the second station. The method of claim 1, wherein the first substrate is exposed to a first reactant in the first station at a different pressure than the first substrate is exposed to the second reactant at the second station. The method of claim 1, wherein the first film is not deposited on the second exposed surface. 2. The method of claim 1 further comprising a second selective ALD process for selectively depositing a second film on a second surface of the first substrate relative to a first surface of the first substrate, Different from the first film. As an atomic layer deposition (ALD) reactor,
As a first station and a second station,
Wherein the first station comprises a first substrate and the first substrate is configured to contact a first reactant in a gas isolated state with the second station such that only a single layer of the first reactant is present on the first substrate Lt; / RTI >
Wherein the second station comprises the first substrate and the first substrate is configured to be in gas isolation from the first station and to be in contact with the second reactant in the substantially absence of the first reactant, The first station and the second station being different from the first reactant and reacting only with one single layer of the first reactant on the first substrate to form the desired material; And
Wherein the first substrate is configured to position the first substrate in the second station after the first substrate is in contact with the first reactant, and after the first substrate contacts the second reactant, Wherein the transfer system comprises a transfer member for transferring the first substrate from the first station to the second station and vice versa;
An intermediate space outside the first and second stations configured to receive the transport system; And
Moving the substrate to the first station through the conveying member, moving the conveying member to the intermediate space, instructing the first station to contact the first substrate with the first reactant, To move the substrate to the second station, to move the transfer member to the intermediate space, and to direct the second station to contact the first substrate with the second reactant, And
The controller being further set to repeat the cycle until a film of the desired thickness is selectively formed on the first surface and not on the second surface,
Wherein the surface of the ALD reactor is substantially out of contact with more than one of the first reactant and the second reactant. 26. The method of claim 25, wherein the ALD reactor is configured for selective deposition,
Wherein the substrate comprises a first surface and a second surface different from the first surface,
Wherein the first reactant is selectively adsorbed onto the first surface with respect to the second surface,
Wherein the second reactant reacts only with a single layer of the first reactant on the first substrate and does not react with the second surface,
Wherein a film of said desired thickness is selectively deposited on said first surface relative to said second surface. 26. The method of claim 25, further comprising: after the first substrate is in contact with the first reactant, but further including a purge location configured to receive the first substrate before placing the first substrate in the second station and,
Wherein the purge location is configured to perform purging with the first substrate therein,
Wherein the purge position is not in a gas communication with the first station, and is not in gas communication with the second station. 28. The ALD reactor of claim 27, wherein the purge location comprises the intermediate space. 26. The apparatus of claim 25, wherein the first station is an ALD reactor configured to purge the first reactant after contacting the first substrate with the first reactant and before placing the first substrate into the second station. . 26. The ALD reactor of claim 25, wherein the ALD reactor is configured to prevent simultaneous presence of a substantial amount of the first reactant and the second reactant at any station of the ALD reactor. 26. The ALD reactor of claim 25, wherein the ALD reactor is configured to substantially prevent a chemical vapor deposition (CVD) reaction from occurring on any surface of the first and second stations of the ALD reactor. 26. The ALD reactor of claim 25, further comprising at least one solid material that provides gas isolation between the first and second stations. 26. The ALD reactor of claim 25, wherein the gas isolation between the first and second stations is not provided by a gas bearing. 26. The ALD reactor of claim 25, wherein the first station is in a fixed position relative to the second station. 26. The ALD reactor of claim 25, wherein the transfer member comprises a rotating substrate holder configured to remove the first substrate from the first station and place the first substrate into the second station by rotation. 26. The ALD reactor of claim 25, wherein the transfer member comprises a spider. 26. The system of claim 25, wherein each station includes a transport mechanism configured to move the substrate from a location in the intermediate space adjacent to the station to the station and to a location in the intermediate space adjacent the station at the station Respectively,
Wherein the substrate transferring member places the substrate on the transfer mechanism, removes the substrate from the transfer mechanism in the intermediate space, and moves the substrate through the intermediate space. 26. The method of claim 25,
A first gas line for placing the first station in gas communication with the first reactant; And
Further comprising a second gas line for placing said second station in gas communication with said second reactant,
Wherein the first gas line is separate from the second gas line. 26. The method of claim 25,
And a third station in a gas isolated state with the first and second stations, the third station being configured to hold a second substrate, wherein the third station is configured to contact the second substrate with the first reactant Wherein the first reactant reacts with a second substrate such that only a single layer of the first reactant is adsorbed onto the second substrate; And
And a fourth station in a gas isolated state with the first station, the second station and the third station, wherein the fourth station is configured to cause the second substrate to contact the second reactant in a substantially free state of the first reactant Wherein the second reactant reacts only with one single layer of the first reactant on the second substrate to form the desired material on the second substrate, . 26. The method of claim 25,
And a third station in a gas isolated state with the first station and the second station, wherein the third station is configured to include the first substrate, wherein the third station is configured to move the first substrate The third station being configured to be in contact with a third reactant different from the second reactant so that only a single layer of the third reactant is adsorbed on the second exposed surface; And
A fourth station configured to include the first substrate in a gas isolated state with the first station, the second station, and the third station, wherein the fourth station is configured to move the first substrate to the first, And a fourth reactant that is different from the third reactant and is in contact with the fourth reactant in a substantially free state of the first, second, and third reactants, wherein the fourth reactant is in contact with the first non- 3 reacting only with one single layer of reactant such that only a single layer of said fourth reactant is adsorbed onto said second exposed surface. 26. The ALD reactor of claim 25, wherein the first station is configured to be placed in a gas isolated state with the second station while the first substrate is in the first station. 26. The ALD reactor of claim 25, wherein the first station is configured to be in a gas isolated state with the second station before the first substrate is placed into the first station. 26. The ALD reactor of claim 25, wherein the second station is configured to be placed in a gas isolated state with the first station while the first substrate is in the second station. 26. The ALD reactor of claim 25, wherein the second station is configured to be in a gas isolated condition with the first station before the first substrate is placed in the second station. A reactor for deposition on a substrate, the reactor comprising:
A first station comprising the substrate and configured to provide a first reactant to the substrate;
A second station comprising the substrate and configured to provide a second reactant to the substrate, wherein the second station is gas isolated from the first station, wherein the second reactant is different from the first reactant, The second station;
Intermediate space; And
A substrate transfer system including a spider configured to move the substrate through the intermediate space,
Wherein the surface of the reactor is substantially not in contact with the first reactant and the second reactant. 46. The apparatus of claim 45, wherein the substrate transport system
A first movable stage configured to move the substrate between the first station and the intermediate space;
Further comprising a second movable stage configured to move the substrate between the second station and the intermediate space,
Wherein the spider is configured to move the wafer from the first mobile stage to the second mobile stage. 47. The reactor of claim 46, wherein each movable stage includes a lift pin configured to lift the substrate in the movable stage within the intermediate space. 46. The apparatus of claim 45, further comprising: a plurality of removable physical barriers defining at least a portion of the first station and the second station,
Wherein the physical barrier can be moved to expose a substrate in the station to the intermediate space,
Wherein the spider is configured to move the substrate after the physical barrier has been moved to expose the substrate.

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