KR20180026109A - Image sensor adapted multiple fill factor - Google Patents

Abstract

The present invention provides an image sensor which adopts different fill factors for a plurality of pixels, respectively. The image sensor adopting multiple fill factors comprises the plurality of pixels processing a beam having a plurality of wavelengths for each wavelength. At least one pixel among the plurality of pixels has a different fill factor from the fill factors of the remaining pixels except the at least one pixel among the plurality of pixels.

Description

[0001] IMAGE SENSOR ADAPTED MULTIPLE FILL FACTOR [0002]

More specifically, a fill factor of each of a plurality of pixels included in an image sensor, hereinafter referred to as a fill factor, is defined as the ratio of the area occupied by the photodiode within the pixel to Semantics - are about differently applied technologies.

Conventional image sensors are formed to include a plurality of pixels having the same fill factor. Thus, existing image sensors can not perform application functions other than, for example, refocusing, high-dynamic-range imaging, or depth extraction, other than by processing light rays to obtain a general image There is a problem.

Also, in order to perform the above-mentioned application function, the conventional image sensor has to have an additional aperture different from the basic aperture.

Thus, the following embodiments propose an image sensor that performs application functions by applying different fill factors of a plurality of pixels to each other.

One embodiment provides an image sensor that applies different fill factors of each of a plurality of pixels differently.

Specifically, one embodiment provides an image sensor in which a photodiode included in at least one of a plurality of pixels is arranged to be offset from a photodiode included in remaining ones of the plurality of pixels.

Further, in one embodiment, the depletion region of the photodiode included in at least one of the plurality of pixels is formed so as to be offset from the depletion region of the photodiode included in the remaining pixels among the plurality of pixels Thereby providing a regulated image sensor.

Thus, embodiments may perform application functions such as focal re-arrangement, high-sensitivity range imaging, or depth extraction based on the disparity between the image obtained from at least one pixel and the image obtained from the remaining pixels .

Also, one embodiment provides an image sensor wherein at least one of the plurality of pixels is formed to include a photodiode of a size smaller than the size of the photodiode included in the remaining ones of the plurality of pixels.

In one embodiment, the photodiodes included in at least one of the plurality of pixels are arranged such that only a light ray at the center of the bundle of rays entering the image sensor is incident, An image sensor formed to have a smaller light incident area.

Accordingly, one embodiment performs an application function such as a focus adjustment, a high-sensitivity range imaging, or a depth extraction based on a blur change between an image obtained from at least one pixel and an image obtained from remaining pixels can do.

According to one embodiment, an image sensor to which a multiple fill factor is applied comprises a plurality of pixels for processing a light ray having a plurality of wavelengths by wavelength, and at least one of the plurality of pixels includes the plurality And a fill factor that is different from a fill factor of the pixels other than the at least one pixel among the pixels of the first pixel.

A position at which the photodiode included in the at least one pixel is disposed in the at least one pixel may be offset from a position where the photodiode included in the remaining pixels is disposed in the remaining pixels.

Wherein a position where a depletion region of a photodiode included in the at least one pixel is formed in a photodiode included in the at least one pixel is determined by a depletion region of a photodiode included in the remaining pixels, May be adjusted to be offset from the position formed in the photodiode included in the pixels.

The image sensor may perform depth extraction based on a disparity between an image obtained from the at least one pixel and an image obtained from the remaining pixels.

The image sensor may perform refocusing using a parallax between the image obtained from the at least one pixel and the image obtained from the remaining pixels.

The at least one pixel may include a photodiode having a size smaller than that of the photodiodes included in the remaining pixels.

The photodiode included in the at least one pixel may have a light incidence area smaller than a light incidence area of a photodiode included in the remaining pixels so that only a light ray at a central part of the bundle of the light rays is incident.

Wherein a size of a depletion region of a photodiode included in the at least one pixel is formed in a photodiode included in the at least one pixel, the depletion region of the photodiode included in the remaining pixels is included in the remaining pixels The size of the photodiode may be adjusted.

The image sensor may perform high-dynamic-range imaging using the image obtained from the at least one pixel and the image obtained from the remaining pixels.

The image sensor may perform depth extraction based on a blur change between an image obtained from the at least one pixel and an image obtained from the remaining pixels.

A metal film for reducing a light incident area of the photodiode, and a hole is formed in the metal film, may be disposed between the microlens and the photodiode included in the at least one pixel.

The plurality of pixels may include microlenses of the same shape or size.

When the plurality of pixels include an R (red) cell, a G (green) cell, a B (blue) cell and a W Lt; RTI ID = 0.0 > factor. ≪ / RTI >

When the plurality of pixels include an R cell, two G cells, and a B cell, any one of the two G cells may be the R cell, excluding any one of the two G cells And a fill factor that is different from the fill factor of the remaining G cell and B cell.

One embodiment may provide an image sensor that applies different fill factors of each of a plurality of pixels differently.

Specifically, one embodiment provides an image sensor in which a photodiode included in at least one of a plurality of pixels is arranged to be offset from a photodiode included in remaining ones of the plurality of pixels.

In one embodiment, the depletion region of the photodiode included in at least one of the plurality of pixels is offset from the depletion region of the photodiode included in the remaining ones of the plurality of pixels. Lt; / RTI >

Accordingly, one embodiment may perform application functions such as focal reorigination, high-sensitivity range imaging, or depth extraction based on the parallax between the image obtained from at least one pixel and the image obtained from the remaining pixels.

In addition, one embodiment may provide an image sensor wherein at least one of the plurality of pixels is formed to include a photodiode of a size smaller than the size of the photodiode included in the remaining pixels of the plurality of pixels .

In one embodiment, the photodiodes included in at least one of the plurality of pixels are arranged such that only a light ray at the center of the bundle of rays entering the image sensor is incident, It is possible to provide an image sensor which is formed to have a smaller light incident area.

Thus, one embodiment may perform application functions such as focal re-arrangement, high-sensitivity range imaging, or depth extraction based on the blur change between the image obtained from at least one pixel and the image obtained from the remaining pixels .

FIGS. 1A and 1B are views for explaining bundles of rays entering the image sensor according to the position of the image sensor according to an embodiment.
2 illustrates an image sensor according to one embodiment.
3A-3B illustrate pixels disposed at the center and periphery of a bundle of rays according to one embodiment.
4A to 4B are views showing images obtained in an image sensor according to an embodiment.
5 is a view showing pixels included in an image sensor according to another embodiment.
6A to 6B are views showing specific examples of the image sensor shown in Fig.
7A-7B illustrate pixels disposed at the center and periphery of a bundle of rays according to another embodiment.
8A-8B illustrate pixels disposed at the center and periphery of a bundle of rays according to another embodiment.
Fig. 9 is a diagram for explaining the parallax between images obtained from the plurality of pixels described with reference to Figs. 8A to 8B.
Figure 10 is a diagram illustrating another example of a plurality of pixels described with reference to Figures 8A-8B.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. In addition, the same reference numerals shown in the drawings denote the same members.

Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification.

FIGS. 1A and 1B are views for explaining bundles of rays entering the image sensor according to the position of the image sensor according to an embodiment.

1A is a view for explaining the correlation between the position of the image sensor 100 according to the embodiment and the focus of the image obtained from the image sensor 100. FIG. And the image sensor 100 according to the present invention.

Referring to FIG. 1A, in a camera system according to an exemplary embodiment, a light beam having a plurality of wavelengths enters a image sensor 100 through a basic aperture and a lens. At this time, when the image sensor 100 is disposed at the position 1, the image sensor 100 can process the light beams by wavelength to obtain a sharp and well-focused image.

On the other hand, when the image sensor 100 is disposed at the position 2 or 3, the image sensor 100 processes the light beam by wavelength to acquire a blurred image due to out of focus.

Referring to FIG. 1B, when the image sensor 100 is disposed at the position 2, bundles of rays may be introduced into the image sensor 100 as shown in FIG. Therefore, when the fill factor of each of the pixels 111 disposed at the position A, which is the periphery of the bundle of rays among the plurality of pixels 110 included in the image sensor 100, is applied differently, The light beams of different amounts of light can be incident on each of the pixels 111 disposed at the in-position A (while the pixels 112 disposed at the position B, which is the center of the bundle of rays among the plurality of pixels 110 ), A light beam of the same light quantity is incident.

Hereinafter, the fill factor of each of the pixels 111 disposed at the position A, which is the periphery of the bundle of rays among the plurality of pixels 110, is applied differently so that the pixels 111) having different amounts of light are incident on the respective light sources 111, 112, 113, and 114, respectively.

Hereinafter, the fact that the fill factor of each of the plurality of pixels is different from each other not only means that the ratio of the area for processing the light rays to the total area of the pixels in each of the plurality of pixels is different, May be different from each other.

2 illustrates an image sensor according to one embodiment.

Referring to FIG. 2, an image sensor 200 according to an embodiment includes a plurality of pixels 210 that process a light ray having a plurality of wavelengths by wavelength.

Here, the plurality of pixels 210 constitute one set, and a plurality of the sets may constitute the image sensor 200. For example, a set of a plurality of pixels 210 may be arranged at a position A which is a periphery of a bundle of rays entering the image sensor 200, or at a position B which is a center of a bundle of rays, respectively.

Each of the plurality of pixels 210 may include a microlens, a flat layer, a color filter, an insulating layer, a metal circuit layer, a photodiode, and a substrate. At this time, each of the plurality of pixels 210 necessarily includes a microlens, a color filter, and a photodiode, but other flat layers, an insulating film, a metal circuit layer, and a substrate may be optionally included.

Here, the color filter included in each of the plurality of pixels 210 filters light rays of other wavelengths excluding light rays of a specific wavelength so that each of the plurality of pixels 210 processes the light rays by a plurality of wavelengths, Only the rays of the light can be introduced.

In particular, each of the plurality of pixels 210 may include microlenses of the same shape or size, while different fill factors may be applied. For example, at least one of the plurality of pixels 210 may have a fill factor that is less than the fill factor of the remaining pixels 230.

At this time, at least one of the pixels 220 includes the photodiode 221 smaller than the photodiode 231 included in the remaining pixels 230, so that the photodiode 221 is smaller than the fill factor of the remaining pixels 230 Can have a fill factor.

The photodiode 221 included in at least one of the plurality of pixels 220 has a light incidence area 232 of the photodiode 231 included in the remaining pixels 230 so that only a light ray at the center of the bundle of light rays is incident. Of the light incident area 222. [0050] A detailed description thereof will be described with reference to Figs. 3A to 3B.

3A-3B illustrate pixels disposed at the center and periphery of a bundle of rays according to one embodiment.

3A is a view illustrating a case where a plurality of pixels 310 according to an exemplary embodiment are disposed at a central portion of a bundle of rays, and FIG. 3B is a diagram illustrating a case where a plurality of pixels 320 according to an exemplary embodiment As shown in Fig.

Referring to FIG. 3A, a plurality of pixels 310 disposed at a center portion (a position B in FIG. 2) of a bundle of rays according to an embodiment includes a plurality of pixels 310 (Regardless of the size of the photodiodes included in each of the pixels 310 of the pixel 310).

For example, at least one pixel 311 (a pixel including a small-sized photodiode and applied with a small fill factor) of a plurality of pixels 310 disposed at the center of a bundle of rays is provided with a center And a light ray in the center of the bundle of rays may be incident on the remaining pixels 312 (a pixel including a large-sized photodiode and a large fill factor). Hereinafter, the fact that the photodiode is small or large means that it is smaller or larger than that of the photodiodes included in other pixels, and the fact that the fill factor is small or large also means that it is smaller or larger than the fill factor applied to other pixels.

At this time, since at least one of the pixels 311 includes a small-sized photodiode, the light incident area may be smaller than the remaining pixels 312 including the large-sized photodiode.

3B, a plurality of pixels 320 disposed at the periphery of the bundle of rays (position A in FIG. 2) according to an embodiment may include a plurality of pixels 320 according to the fill factor of each of the plurality of pixels 320 (Depending on the size of the photodiodes included in each of the plurality of pixels 320).

For example, at least one pixel 321 (a pixel including a small-sized photodiode and applied with a small fill factor) among a plurality of pixels 320 disposed at the periphery of a bundle of rays is provided with a peripheral portion (A blurred light generating blur) is not incident, and the rest of the pixels 322 (a pixel including a large-sized photodiode and applied with a large fill factor) are perfectly incident on the peripheral portion of the bundle of rays have.

At this time, since at least one of the pixels 321 includes a small-sized photodiode, the light incident area may be smaller than the remaining pixels 322 including the photodiode of a large size.

That is, at least one pixel 311, 321 of the plurality of pixels 310, 320 includes a photodiode having a size smaller than that of the photodiodes included in the remaining pixels 312, 322, Only one of the bundles of rays is incident on one of the pixels 311 and 321 (the bundle of rays is not incident on the periphery of the bundle of rays), and the remaining pixels 312 and 322 And the light rays in the peripheral portion may be incident.

Thus, an image sensor comprising such a plurality of pixels 310, 320 may be used for at least one of the pixels 311, 321 and the remaining pixels 312, 322 to perform a focus rebalance, Depth extraction, and so on. A detailed description thereof will be given below.

The physical size of the photodiodes included in at least one of the pixels 311 is formed to be smaller than the physical size of the photodiodes included in the remaining pixels 312 so that the fill factor of at least one of the pixels 311 is The fill factor of at least one of the pixels 311 may be at least one of the pixels 311 without any change in the physical size of the photodiodes included in at least one of the pixels 311. [ The size of the depletion region of the photodiode included in one pixel 311 is adjusted to be smaller than the size of the depletion region of the photodiode included in the remaining pixels 312, Lt; / RTI > A detailed description thereof will be described with reference to Figs. 7A to 7B.

The fill factor of at least one pixel 311 and the fill factor of the remaining pixels 312 may be included in the positions of the photodiodes included in at least one of the pixels 311 and the remaining pixels 312 And a depletion region of the photodiode included in the remaining pixels 312 is formed at a position where a depletion region of the photodiode included in at least one of the pixels 311 is formed and a position where the depletion region of the photodiodes included in the remaining pixels 312 are formed (At least one of the pixels 311 and the rest of the pixels 312 is different in the position in which the region for processing the light beam is disposed). A detailed description thereof will be described with reference to Figs. 8A to 8B, Figs. 9 and 10. Fig.

Hereinafter, the positions where the photodiodes are arranged to be offset from each other in the plurality of pixels means that the photodiodes in the plurality of pixels are arranged at different positions (different positions with respect to the center of each pixel) The fact that the positions where the depletion regions of the photodiodes are formed are offset from each other means that the depletion regions of the photodiodes in a plurality of pixels are formed at different positions (different positions with respect to the center of each pixel) do.

Hereinafter, making the fill factor of at least one of the pixels 311 different from the fill factor of the remaining pixels 312 means that the characteristics of the photodiodes included in at least one of the pixels 311 and the remaining pixels 312 are different from each other in characteristics of the photodiodes.

4A to 4B are views showing images obtained in an image sensor according to an embodiment.

Specifically, FIG. 4A is a view illustrating an image in which a fill factor according to an exemplary embodiment is obtained in a small pixel, and FIG. 4B is an image obtained in a pixel having a large fill factor in accordance with an exemplary embodiment.

Referring to FIG. 4A, a pixel having a small fill factor (at least one pixel including a small-sized photodiode described with reference to FIGS. 3A to 3B and applied with a small fill factor) according to an exemplary embodiment, Since only the center ray is incident, a sharp image 410 can be generated.

On the other hand, referring to FIG. 4B, a pixel having a large fill factor according to an embodiment (the remaining pixels including a large-sized photodiode described with reference to FIGS. 3A to 3B and applied with a large fill factor) Since both the light in the center portion and the light in the peripheral portion are incident, the fill factor shown in FIG. 4A can produce an image 420 that is blurry (blurred) than the image 410 generated in a small pixel.

Thus, an image sensor according to one embodiment can perform focussing using an image 410 obtained from at least one pixel with a small fill factor and an image 420 obtained from remaining pixels with a large fill factor have.

The image sensor may also be implemented using an image 410 obtained from at least one pixel with a small fill factor and an image 420 obtained from remaining pixels with a large fill factor (at least one pixel with a small fill factor) Using a feature that the amount of incident light is smaller than the amount of light incident on remaining pixels having a larger fill factor).

In addition, the image sensor can perform depth extraction based on the blur variation between the image 410 obtained from at least one pixel with a small fill factor and the image 420 obtained from the remaining pixels with a large fill factor .

In this way, the image sensor can change the fill factor of the photodiodes included in the plurality of pixels to perform application functions such as focussing, high-sensitivity range imaging, or depth extraction without additional components (e.g., additional apertures) have.

Further, the image sensor may be configured such that the photodiodes included in the plurality of pixels are offset from each other, or the photodiodes included in the plurality of pixels are offset from each other, By adjusting the regions to be offset from each other, the characteristics of the photodiodes included in the plurality of pixels can be made different from each other. A detailed description thereof will be described with reference to Figs. 8A to 8B, Figs. 9 and 10. Fig.

5 is a view showing pixels included in an image sensor according to another embodiment.

Referring to FIG. 5, an image sensor according to another embodiment includes a plurality of pixels that process light rays having a plurality of wavelengths by wavelength.

Here, the metal film 520 may be disposed on at least one of the plurality of pixels 510 (a pixel including a small-sized photodiode to which a small fill factor is applied).

For example, the metal film 520 may be disposed between the microlenses and the photodiodes included in at least one of the plurality of pixels. However, the metal film 520 may be disposed on the upper portion of the photodiode included in at least one of the pixels 510.

At this time, the metal film 520 includes a hole 521 formed to have a circular or polygonal shape (for example, when the metal film 520 is viewed from above, the hole 521 has a round or polygonal shape Lt; / RTI > Therefore, since the metal film 520 makes the light rays enter the photodiode through the holes 521, the light incident area of the photodiodes included in at least one of the pixels 510 can be reduced.

As such, at least one of the pixels 510 further includes the metal film 520 so that the image obtained from at least one of the pixels 510 has a sharper image ( A darker image) can be generated. Accordingly, the image sensor according to another exemplary embodiment may include a metal film 520 in at least one pixel 510 of the plurality of pixels, thereby performing application functions such as focus re-adjustment, high-sensitivity range imaging, Can be performed smoothly.

6A to 6B are views showing specific examples of the image sensor shown in Fig.

In particular, FIG. 6A illustrates an image sensor 600 including R cells, G cells, B cells, and W cells according to one embodiment.

6A, a plurality of pixels 610 included in an image sensor 600 according to an exemplary embodiment of the present invention includes red (R) 611, green (G) 612, and blue Cell 613 and W cell 614, the W cell 614 may have a different fill factor from that of the R cell 611, the G cell 612, and the B cell 613 have. That is, as described above, the W cell 614 includes a photodiode of a smaller size than the photodiodes included in each of the remaining pixels (R cell 611, G cell 612, and B cell 613) (R cell 611, G cell 612, and B cell 613), respectively, by using the above-described method.

6B illustrates an image sensor 620 including an R cell, two G cells, and a B cell according to another embodiment.

6B, a plurality of pixels 630 included in the image sensor 620 according to another exemplary embodiment is divided into R cells 631, two G cells 632, 633, and B cells 634 Any one of the two G cells 632 of the two G cells 632 and 633 has a different fill factor from that of the R cell 631, the remaining G cell 633 and the B cell 634 . That is, as described above, any one of the G cells 632 is smaller in size than the photodiodes included in each of the remaining pixels (R cell 631, remaining G cell 633, and B cell 634) By including a photodiode, it is possible to have a picker smaller than the fill factor of each of the remaining pixels (R cell 631, remaining G cell 633, and B cell 634).

However, without being limited to the foregoing, the image sensor 600, 620 may be comprised of pixels that process light beams of various wavelengths, and at least one of the pixels that processes light rays of various wavelengths Lt; RTI ID = 0.0 > a < / RTI > fill factor.

7A-7B illustrate pixels disposed at the center and periphery of a bundle of rays according to another embodiment.

7A is a view showing a case where a plurality of pixels 710 according to another embodiment are disposed at the center portion of a bundle of rays, and FIG. 7B is a view illustrating a plurality of pixels 720 according to another embodiment. In the peripheral portion of the bundle of rays.

7A, a plurality of pixels 710 disposed at the center portion (position B in FIG. 2) of a bundle of rays according to another embodiment includes depletion regions 711-1 and 712-1 on a photodiode, Are formed at the same position and at the same size, light rays of the same light amount can be received.

For example, at least any one of the pixels 711 and the remaining pixels 712 of the plurality of pixels 710 disposed at the center of the bundle of rays may include photodiodes of the same size, It is possible to perfectly receive the light rays in the central portion by adjusting the positions and sizes of the depletion regions 711-1 and 712-1 to be equal.

7B, a plurality of pixels 720 disposed at the periphery of the bundle of rays (position A in FIG. 2) according to another embodiment includes a plurality of pixels 720 in the fill factor of each of the plurality of pixels 720 (In accordance with the depletion regions 721-1 and 722-1 of the photodiodes included in each of the plurality of pixels 720), light beams having different amounts of light can be incident.

For example, at least one pixel 721 of the plurality of pixels 720 disposed in the periphery of the bundle of rays may be configured to reduce the size of the depletion region 721-1 formed on the photodiode, The remaining pixels 722 do not receive the light rays of the peripheral portion (the blurring light generating blur) among the bundles of the bundles of the photodiodes 722-1 and 722-2 by greatly adjusting the size of the depletion region 722-1 formed on the photodiode, It can receive light completely.

That is, at least any one of the pixels 711 and 721 of the plurality of pixels 710 and 720 adaptively adjusts the size of the depletion region 721-1 of the photodiode to the remaining pixels 712 and 722 By adjusting the depletion regions 712-1 and 722-1 of the photodiode so as to be different from each other, only the light in the center portion is received and the light in the peripheral portion is not received.

Hereinafter, adjusting the size or position of the depletion regions 721-1 and 722-1 may be performed by controlling the magnitude of the voltage applied to the photodiode. However, without being limited thereto or limited, adjusting the size or position of the depletion regions 721-1 and 722-1 may be performed by controlling various parameters affecting formation of the depletion regions 721-1 and 722-1 .

Thus, the image sensor including such a plurality of pixels 710, 720 can be used in at least one of the pixels 711, 721 and the remaining pixels 712, 722, As described above, application functions such as focus re-adjustment, high-sensitivity range imaging, or depth extraction can be performed.

7B, at least one of the pixels 721 is formed so as not to receive the light of the peripheral portion, instead of adjusting the size of the depletion region 721-1 formed on the photodiode to a small size The position where the depletion region 721-1 is formed can be adjusted on the photodiode (for example, the position where the depletion region 721-1 is formed is adjusted rightward on the photodiode, 1).

Although the image sensor has a small and large fill factor of the photodiodes included in the plurality of pixels, the image sensor may be configured such that the photodiodes included in the plurality of pixels are offset from each other. In other words, the position where the photodiodes included in at least one of the plurality of pixels are disposed on at least one of the pixels can be offset from the position where the photodiodes included in the remaining pixels are disposed on the remaining pixels have. A detailed description thereof will be given below.

8A-8B illustrate pixels disposed at the center and periphery of a bundle of rays according to another embodiment.

8A is a view illustrating a case where a plurality of pixels 810 are disposed at the center of a bundle of rays according to another embodiment, and FIG. 8B is a diagram illustrating a case where a plurality of pixels 820 are arranged in the periphery of the bundle of rays.

Referring to FIG. 8A, each of a plurality of pixels 810 disposed at a center portion (a position B in FIG. 2) of a bundle of rays according to another embodiment includes a plurality of pixels 810 arranged at offset positions (e.g., The light rays are not incident on the plurality of pixels 810 because the light emitting diodes are disposed on the left side and the right side, respectively. Hereinafter, the case where the photodiodes disposed at offset positions with respect to each other are arranged to the left and right with respect to the center of the pixel are described. However, the present invention is not limited thereto, Can be placed at different positions.

For example, at least one pixel 811 (a pixel formed on the left side with respect to the center of the pixel) of a plurality of pixels 810 disposed in the center of the bundle of rays may be provided with a light- The light rays of the center of the bundle of rays may not be incident on the remaining pixels 812 (the pixels whose photodiodes are formed on the right side with respect to the center of the pixel).

8B, a plurality of pixels 820 disposed at the periphery of the bundle of rays (position A in FIG. 2) according to yet another embodiment includes a plurality of pixels 820 of a plurality of pixels 820, A light beam having a different amount of light may be incident on the light source.

For example, at least one pixel 821 (a left pixel formed on the left side with respect to the center of the pixel) of a plurality of pixels 820 disposed in the periphery of a bundle of rays includes a plurality of light- The light rays of the peripheral portion of the bundle of rays are not incident on the remaining pixels 822 (light pixels formed on the right side with respect to the center of the pixel) of the remaining pixels 822 have.

That is, at least one of the pixels 821 and the remaining pixels 822 are different from each other depending on the position (center portion or peripheral portion) where the plurality of pixels 810 and 820 are arranged with respect to the bundle of rays Which causes a parallax to be generated between the image obtained from at least one of the pixels 821 and each of the remaining pixels 822. [ A detailed description thereof will be described with reference to FIG.

Fig. 9 is a diagram for explaining the parallax between images obtained from the plurality of pixels described with reference to Figs. 8A to 8B.

9, the image sensor 910 includes at least one pixel (hereinafter referred to as a left pixel) 911 and the remaining pixels (hereinafter referred to as a light pixel) described with reference to Figs. 8A to 8B. Lt; RTI ID = 0.0 > 912 < / RTI >

For example, the left pixel 911 is a pixel including a photodiode disposed on the left side with respect to the center of the pixel, and the right pixel 912 is a pixel including a photodiode disposed on the right side with respect to the center of the pixel Lt; / RTI > Therefore, the photodiodes included in each of the left pixel 911 and the right pixel 912 can be disposed at positions offset from each other.

Here, the left pixel 911 and the right pixel 912 may be pixels that process rays of the same wavelength, or pixels that process rays of different wavelengths. For example, the left pixel 911 and the right pixel 912 may all be G pixels that process the G light signal.

At this time, the image sensor may include such that the left pixel 911 and the right pixel 912 are alternately arranged in one row.

The intensity of the light rays 921 and 922 received by each of the left pixel 911 and the right pixel 912 arranged in one row when such an image sensor is disposed at a position (position 1 in Fig. Is shown in Graph 1 (920).

On the other hand, when the image sensor is disposed at a non-focused position (position 2 in FIG. 1A), the light beams 931 and 932 received at each of the left pixel 911 and the right pixel 912, The intensity is shown in Graph 2 (930).

The position where the intensity of the light ray 931 received by the left pixel 911 has the highest point and the position where the intensity of the light ray 932 received by the light pixel 912 has the highest point, A parallax is generated between the image obtained from the left pixel 911 and the image obtained from the write pixel 912. [

Thus, the image sensor can perform focal reordering and depth extraction based on the parallax between images using the left pixel 911 and the right pixel 912, which include a photodiode disposed at a position offset from each other have.

In this case, the refocusing may be performed using the parallax between images, and a specific method for performing depth extraction may be a well-known time-based refocusing algorithm or depth extraction algorithm. Therefore, a detailed description of a specific method of performing focus adjustment and depth extraction will be omitted.

In addition, instead of using the left pixel 911 and the right pixel 912, which include a photodiode disposed at offset positions with respect to each other, the image sensor also includes a left pixel and a right pixel, each including a photodiode disposed at the same position It can also be used. In this case, positions where the depletion regions of the photodiodes included in the left pixel and the right pixel are respectively formed can be adjusted to be offset from each other. A detailed description thereof will be described with reference to FIG.

Figure 10 is a diagram illustrating another example of a plurality of pixels described with reference to Figures 8A-8B.

Referring to Figure 10, instead of configuring the photodiodes included in the plurality of pixels to be offset from each other as described with reference to Figures 8A-8B, the photodiodes included in the plurality of pixels 1010 (Based on the center of each of the plurality of pixels 1010) can be configured identically.

However, in this case, the image sensor may be configured such that the positions where the depletion regions 1011-1 and 1012-1 of the photodiodes included in the plurality of pixels 1010 are formed are offset from each other (for example, ) To the left and right with respect to each center). Hereinafter, it is explained that the depletion regions 1011-1 and 1012-1 of the photodiodes included in the plurality of pixels 1010 are adjusted to be arranged to the left and right sides, respectively, with respect to the center of the pixel, Or may be adjusted to be arranged at various positions that are different from each other in the three-dimensional plane with respect to the center of the pixel, respectively.

For example, at least one pixel 1011 (left pixel) of the plurality of pixels 1010 controls the position of the depletion region 1011-1 formed on the photodiode to the left with respect to the center of the pixel And the remaining pixels 1012 (light pixels) receive the light of the periphery of the bundle of rays, and the position of the depletion region 1012-1 formed on the photodiode is adjusted to the right with respect to the center of the pixel So that it is possible not to receive light rays in the periphery of the bundle of rays.

Accordingly, in the plurality of pixels 1010, at least one of the pixels 1011 and the remaining pixels 1012 receive light beams of different amounts of light, and this causes at least one of the pixels 1011 and the remaining Thereby causing a parallax to be generated between the images obtained from each of the pixels 1012. Accordingly, the image sensor including the plurality of pixels 1010 can perform the application functions of focus adjustment and depth extraction, as described above with reference to FIG.

The apparatus described above may be implemented as a hardware component, a software component, and / or a combination of hardware components and software components. For example, the apparatus and components described in the embodiments may be implemented within a computer system, such as, for example, a processor, a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable array (FPA) A programmable logic unit (PLU), a microprocessor, or any other device capable of executing and responding to instructions. The processing device may execute an operating system (OS) and one or more software applications running on the operating system. The processing device may also access, store, manipulate, process, and generate data in response to execution of the software. For ease of understanding, the processing apparatus may be described as being used singly, but those skilled in the art will recognize that the processing apparatus may have a plurality of processing elements and / As shown in FIG. For example, the processing unit may comprise a plurality of processors or one processor and one controller. Other processing configurations are also possible, such as a parallel processor.

The software may include a computer program, code, instructions, or a combination of one or more of the foregoing, and may be configured to configure the processing device to operate as desired or to process it collectively or collectively Device can be commanded. The software and / or data may be in the form of any type of machine, component, physical device, virtual equipment, computer storage media, or device , Or may be permanently or temporarily embodied in a transmitted signal wave. The software may be distributed over a networked computer system and stored or executed in a distributed manner. The software and data may be stored on one or more computer readable recording media.

The method according to an embodiment may be implemented in the form of a program command that can be executed through various computer means and recorded in a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, and the like, alone or in combination. The program instructions to be recorded on the medium may be those specially designed and configured for the embodiments or may be available to those skilled in the art of computer software. Examples of computer-readable media include magnetic media such as hard disks, floppy disks, and magnetic tape; optical media such as CD-ROMs and DVDs; magnetic media such as floppy disks; Magneto-optical media, and hardware devices specifically configured to store and execute program instructions such as ROM, RAM, flash memory, and the like. Examples of program instructions include machine language code such as those produced by a compiler, as well as high-level language code that can be executed by a computer using an interpreter or the like. The hardware devices described above may be configured to operate as one or more software modules to perform the operations of the embodiments, and vice versa.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

Claims (15)

1. An image sensor to which a multiple fill factor is applied,
A plurality of pixels for processing wavelengths of light rays having a plurality of wavelengths,
/ RTI >
Wherein at least one of the plurality of pixels
And a fill factor that is different from a fill factor of the remaining pixels except for the at least one of the plurality of pixels.
The method according to claim 1,
Wherein a position at which the photodiode included in the at least one pixel is disposed in the at least one pixel is
And the photodiodes included in the remaining pixels are offset from a position where the remaining pixels are disposed.
The method according to claim 1,
Wherein a depletion region of a photodiode included in the at least one pixel is formed in a photodiode included in the at least one pixel,
Wherein a depletion region of the photodiode included in the remaining pixels is adjusted to be offset from a position formed in the photodiode included in the remaining pixels.
The method according to claim 1,
The image sensor
And performs depth extraction based on a disparity between an image obtained from the at least one pixel and an image obtained from the remaining pixels.
The method according to claim 1,
The image sensor
Wherein refocusing is performed using a parallax between the image obtained from the at least one pixel and the image obtained from the remaining pixels.
The method according to claim 1,
The at least one pixel
And a photodiode having a size smaller than the size of the photodiode included in the remaining pixels.
The method according to claim 6,
The photodiodes included in the at least one pixel
And a light incidence area smaller than a light incidence area of a photodiode included in the remaining pixels so that only a light ray in the central part of the bundle of light rays is incident.
The method according to claim 1,
Wherein a size of a depletion region of a photodiode included in the at least one pixel is formed in a photodiode included in the at least one pixel,
Wherein a depletion region of a photodiode included in the remaining pixels is adjusted to be different from a size formed in a photodiode included in the remaining pixels.
The method according to claim 1,
The image sensor
And performs high-dynamic-range imaging using the image obtained from the at least one pixel and the image obtained from the remaining pixels.
The method according to claim 1,
The image sensor
And performs a depth extraction based on a blur change between an image obtained from the at least one pixel and an image obtained from the remaining pixels.
The method according to claim 1,
Between the microlenses and the photodiodes included in at least one of the pixels,
And a metal film for reducing a light incident area of the photodiode, wherein a hole is formed in the metal film.
The method according to claim 1,
The plurality of pixels
And includes a microlens of the same shape or size.
The method according to claim 1,
When the plurality of pixels include R (red), G (green), B (blue) and W (white) cells,
And a fill factor different from a fill factor of the R cell, the G cell, and the B cell.
The method according to claim 1,
When the plurality of pixels include R cells, two G cells, and B cells, any one of the two G cells
And a fill factor different from a fill factor of the R cell, the remaining G cell and the B cell excluding the one of the two G cells.
Basic aperture;
lens; And
An image sensor comprising a plurality of pixels processing the light rays having a plurality of wavelengths passing through the basic aperture and the lens,
Lt; / RTI >
Wherein at least one of the plurality of pixels
And a fill factor that is different from a fill factor of the remaining pixels of the plurality of pixels except for the at least one pixel.

Images