KR20170136214A - Polishing pad manufacturing method forchemicalmechanical polish - Google Patents

Polishing pad manufacturing method forchemicalmechanical polish Download PDF

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Publication number
KR20170136214A
KR20170136214A KR1020160068013A KR20160068013A KR20170136214A KR 20170136214 A KR20170136214 A KR 20170136214A KR 1020160068013 A KR1020160068013 A KR 1020160068013A KR 20160068013 A KR20160068013 A KR 20160068013A KR 20170136214 A KR20170136214 A KR 20170136214A
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Prior art keywords
polishing pad
mold
shape
manufacturing
polishing
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KR1020160068013A
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Korean (ko)
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차기용
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(주)비젼케이엔에스
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Publication of KR20170136214A publication Critical patent/KR20170136214A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

The present invention relates to a method of manufacturing a polishing pad and, more specifically, to a method of manufacturing a polishing pad of a chemical mechanical polishing apparatus. According to the present invention, the method of manufacturing a polishing pad of a chemical mechanical polishing apparatus comprises: a step of manufacturing a base shape having a reverse shape to the surface shape of an object to be polished; a step of manufacturing a separable mold having a shape identical to the surface shape of the object to be polished by using a material with a good separable property on the base shape; and a step of manufacturing a polishing pad having a reverse shape to the surface shape of the object to be polished by pouring a polymer into the separable mold. According to the method of manufacturing a polishing pad of a chemical mechanical polishing apparatus, the separable mold is used to quickly manufacture a polishing pad having a shape opposite to an object to be polished, and the polishing pad of the reverse shape is used to obtain a higher polishing speed.

Description

화학적기계적 연마장치의 연마 패드 제작방법{Polishing pad manufacturing method forchemicalmechanical polish}Technical Field [0001] The present invention relates to a polishing pad manufacturing method for chemical mechanical polishing,

본 발명은 연마 패드 제작방법에 관한 것으로, 더욱 상세하게는 화학적기계적 연마장치의 연마 패드 제작방법에 관한 것이The present invention relates to a polishing pad manufacturing method, and more particularly, to a polishing pad manufacturing method of a chemical mechanical polishing apparatus

다.All.

일반적으로 화학적기계적 연마(chemicalmechanical polish, 이하 'CMP'라 한다.) 장치는 반도체 소자의 제조시 또는In general, a chemical mechanical polishing (CMP) device is used for manufacturing semiconductor devices or

PDP(plasma display panel, 이하 'PDP'라 한다.) 제조시에 글로벌 평탄화(global planarization)에 사용되는 장치이다.Is a device used for global planarization in the manufacture of a PDP (plasma display panel).

CMP 장치는 슬러리(slurry) 용액의 화학적 작용과 연마 패드(polishing pad)에 의한 기계적 작용에 의하여 웨이퍼의 표면The CMP apparatus is operated by a chemical action of a slurry solution and a mechanical action by a polishing pad,

또는 기타 피연마물을 연마하는 장치이다.Or any other object to be polished.

도 1은 종래의 일반적인 CMP 장치의 구성을 보여주는 요부절개 사시도이다.1 is a perspective view showing a configuration of a conventional CMP apparatus.

첨부된 도 1에 도시한 바와 같이, 회전테이블(10)의 상면에는 연마를 위한 연마 패드(20)가 부착되어 있다. 또한 상기 연마As shown in FIG. 1, a polishing pad 20 for polishing is attached to the upper surface of the rotary table 10. Further,

패드(20)의 상부에는 웨이퍼(30)를 부착하고 있는 웨이퍼 캐리어(40)가 연마 패드(20)와 마찰할 수 있도록 설치된다.A wafer carrier 40 attaching a wafer 30 is provided on the pad 20 so as to be able to friction with the polishing pad 20.

따라서 상기 웨이퍼 케리어(40)는 일정한 압력(F)으로 연마 패드(20)와 밀착되면서 회전(rotation) 및 요동운동Accordingly, the wafer carrier 40 is in close contact with the polishing pad 20 at a constant pressure F,

(oscillation)을 하게 되고, 이와 동시에 회전테이블(10)의 회전운동이 진행됨에 따라 평탄화작업이 진행된다.At the same time, as the rotary motion of the rotary table 10 proceeds, the planarization operation proceeds.

상기 연마 패드(20)는 원판(disc) 형상을 한 것으로서, 폴리우레탄 발포체로 만들어진 것을 널리 사용되고 있으며, 상기 연The polishing pad 20 has a disc shape, and is made of a polyurethane foam. The polishing pad 20 is widely used,

마 패드(20)의 표면에는 다수의 홀(hole) 또는 홈(groove)들이 음각(intaglio)되어 있다. 따라서 연마 패드(20)의 표면에A plurality of holes or grooves are intaglio on the surface of the pad 20. Therefore, on the surface of the polishing pad 20

형성된 홀, 홈의 내부에 슬러리를 함유하게 되어 연마 속도 및 연마 균일도가 향상된다.The slurry is contained in the formed holes and grooves, thereby improving the polishing rate and polishing uniformity.

일반적으로 연마 패드는 평탄화하고자 하는 피연마제의 종류에 따라 상이한 성질이 요구된다. 예를 들어 실리콘 웨이퍼를Generally, the polishing pad requires different properties depending on the kind of the abrasive to be planarized. For example, a silicon wafer

가공하는 경우, 이러한 가공의 목적은 표면 거칠기를 1 nm 이하로 낮추고 전체적인 두께편차를 1 ㎛ 이하로 가공하는 것When processing, the purpose of such processing is to reduce the surface roughness to 1 nm or less and to process the entire thickness deviation to 1 μm or less

이 목적이다.This is the purpose.

이를 위해서는 웨이퍼 전면의 형상을 잘 추종하는 연질의 연마 패드가 사용되는 것이 일반적이다. 즉, 연질 패드의 경우 변To this end, it is common to use a soft polishing pad that follows the shape of the wafer front surface. That is, in the case of the soft pad,

형량이 상대적으로 크기 때문에 웨이퍼에 가압시 웨이퍼 전체에 대하여 균일한 가공을 수행할 수 있게 한다.Since the jig is relatively large, it is possible to perform uniform processing on the entire wafer when the wafer is pressurized.

상기 CMP 장치에는 많은 소모성 부품이 사용되는 데, 이둘 중의 하나인 연마 패드는 CMP 공정의 중요한 요소인 연마 속A number of consumable parts are used in the CMP apparatus, and one of them is an abrasive pad which is an important element of the CMP process

도(removal rate) 및 연마 균일도(removal uniformity)에 큰 영향을 미친다.Which greatly affects removal rate and removal uniformity.

따라서 이러한 연마 패드는 CMP 공정을 진행함에 따라 자주 교체해 주어야 한다는 문제점이 있다.Therefore, there is a problem that such a polishing pad must be frequently replaced as the CMP process proceeds.

따라서 본 발명은 상술한 제반 문제점을 해결하고자 안출된 것으로, 피연마물과 반대의 형상을 지닌 연마 패드를 신속하게SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a polishing pad

제작할 수 있고 또한 이러한 역 형상의 연마 패드를 사용함으It is also possible to use a polishing pad of such an inverted shape

상술한 바와 같은 목적을 구현하기 위한 본 발명의 화학적기계적 연마장치의 연마 패드 제작방법은 피연마물 표면의 형상A method of manufacturing a polishing pad of a chemical mechanical polishing apparatus according to the present invention for realizing the above-mentioned object is characterized in that the shape

과 역 형상을 갖는 기본형 제작단계; 상기 기본형에 이형성이 좋은 물질을 사용하여 피연마물 표면의 형상과 동일한 형상A basic type manufacturing step having an inverted shape; By using a material having good releasability in the basic shape, the shape of the surface of the object to be polished

을 갖는 이형성 몰드 제작단계; 상기 이형성 몰드에 폴리머를 부어서 피연마물 표면의 형상과 역 형상을 갖는 연마 패드 제A mold releasing step of forming a mold; A polymer is poured into the mold releasing mold to form an abrasive pad

작단계;를 포함하여 이루어진 것을 특징으로 한다.And a second step of performing the second step.

또한, 기본형 제작단계는 금속 에칭법 또는 레피드 프로토타입을 사용하여 제작하는 것을 특징으로 한다.In addition, the basic type manufacturing step is characterized in that it is manufactured using a metal etching method or a feed prototype.

또한, 이형성 몰드 제작단계는 실리콘 수지를 사용하여 제작하는 것을 특징으로 한다.The mold releasing mold is fabricated using a silicone resin.

이하 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대한 각 단계의 작용을 상세히 설명하면 다음과 같다.The operation of each step of the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 일실시예에 따른 화학적기계적 연마장치의 연마 패드 제작방법을 보여주는 제조공정도이다.2 is a manufacturing process diagram showing a method of manufacturing a polishing pad of a chemical mechanical polishing apparatus according to an embodiment of the present invention.

첨부된 도 2에 도시한 바와 같이 본 발명의 일실시예에 따른 화학적기계적 연마장치의 연마 패드 제작방법은 기본형As shown in FIG. 2, a method of manufacturing a polishing pad of a chemical mechanical polishing apparatus according to an embodiment of the present invention includes:

(master mold) 제작단계, 이형성 몰드 제작단계, 연마 패드 제작단계로 이루어져 있다.a master mold manufacturing step, a releasing mold manufacturing step, and a polishing pad manufacturing step.

이상에서 상세히 설명한 바와 같이, 본 발명에 따른 화학적기계적 연마장치의 연마 패드 제작방법에 의하면 이형성 몰드를As described in detail above, according to the method of manufacturing the polishing pad of the chemical mechanical polishing apparatus according to the present invention,

사용함으로써 피연마물과 반대의 형상을 지닌 연마 패드를 신속하게 제작할 수 있고 또한 이러한 역 형상의 연마 패드를It is possible to rapidly produce a polishing pad having a shape opposite to that of the object to be polished,

사용함으로써 더욱 높은 연마 속도를 얻을 수 있는 효과가 있다.There is an effect that a higher polishing rate can be obtained.

도 1은 종래의 일반적인 CMP 장치의 구성을 보여주는 요부절개 사시도,
도 2는 본 발명의 일실시예에 따른 화학적기계적 연마장치의 연마 패드 제작방법을 보여주는 제조공정도.BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a configuration of a conventional CMP apparatus,
FIG. 2 is a manufacturing process diagram showing a method of manufacturing a polishing pad of a chemical mechanical polishing apparatus according to an embodiment of the present invention; FIG.

상기 기본형 제작단계는 연마를 하고자하는 물체(피연마체)의 표면 형상과 반대의 형상(역 형상)을 지닌 기본형을 제작하In the basic mold manufacturing step, a basic mold having an opposite shape (reverse shape) to the surface shape of an object (an object to be polished) to be polished is manufactured

는 단계이다.Is a step.

이러한 기본형 제작단계는 적은 비용으로 간편하게 제작할 수 있는 금속 에칭법 또는 레피드 프로토타입(rapidThese basic fabrication steps include metal etching or rapid prototyping,

prototype)을 사용하여 제작하는 것이 바람직하다.prototype) is preferably used.

금속 애칭법을 사용하면 최소 150 ㎛ 크기 선폭의 패턴까지 형성할 수 있게 되며, 이러한 기본형을 사용하여 제작된 연마By using the metal nicking method, it is possible to form a pattern having a line width of at least 150 μm, and the polishing

패드를 사용하여 PDP 격벽과 같은 형상을 지닌 금형을 신속하게 연마할 수 있게 된다.It is possible to rapidly polish a mold having the same shape as the PDP barrier rib by using the pad.

상기 이형성 몰드 제작단계는 상기 기본형 제작단계에서 제작된 기본형 위에 이형성이 우수하고 열 경화에 의하여 수축이The mold releasing mold is manufactured by forming a mold having excellent releasability on a basic mold manufactured in the basic mold making step,

잘 되지 않는 이형 물질을 도포하여 이형성 몰드를 제작하는 단계이다. 이러한 특성을 지닌 이형 물질로 실리콘 수지And a mold releasing mold is formed by applying a mold releasing material which is not good. As a release material having such characteristics,

(silicone resin)를 사용하여 제작하는 것이 바람직하다.it is preferable to use a silicone resin.

즉 도 2에 도시한 바와 같이 상기 기본형 위에 이형 물질로서 실리콘 수지를 도포하고, 이후 진공상태에서 탈 가스 작업이That is, as shown in FIG. 2, a silicone resin is applied as a release material on the basic mold, and then, in a vacuum state,

진행된 후 오븐(oven)에서 큐어링(curing) 작업이 완료되면 이형성 몰드가 만들어지는 것이다.After the curing process is completed in the oven after the process, a mold releasing mold is formed.

상기 연마 패드 제작단계는 상기 이형성 몰드에 연마 패드의 재료가 되는 폴리머(polymer)와 일반적으로 금형 연마에 사The step of preparing the polishing pad may include a step of applying a polymer to be a material of the polishing pad to the mold releasing mold,

용되는 다이아몬드 입자를 배합한 것을 도포하여 제작한다. 상기 도포된 이형성 몰드는 이후 롤링(rolling) 공정 및 광 경화A diamond particle to be used is blended and then coated. The applied mold releasing mold is then subjected to a rolling process and a photo-

(light hardening) 공정을 거쳐서 연마 패드를 제작하는 것이다.(light hardening) process.

즉 도 2에 도시한 바와 같이 상기 이형성 몰드 위에 연마 패드 원료로서 폴리우레탄(polyurethane), 반응 개시제(initiator)That is, as shown in FIG. 2, a polyurethane, a reaction initiator,

및 다이아몬드 입자를 혼합한 용액을 도포한다. 이후 진공상태에서 탈 가스(degasing) 작업이 진행된 후 롤링 공정 및 자And diamond particles are mixed. After the degassing process is performed in the vacuum state,

외선 경화(UV hardening) 공정을 거쳐서 연마 패드가 만들어지는 것이다.The polishing pad is made through the UV hardening process.

본 발명은 상기 실시 예에 한정되지 않고 본 발명의 기술적 요지를 벗어나지 아니하는 범위 내에서 다양하게 수정/변형되The present invention is not limited to the above-described embodiments, and various modifications and variations may be made without departing from the technical scope of the present invention.

어 실시될 수 있음은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 있어서 자명한 것이다.It will be apparent to those skilled in the art that the present invention can be carried out without departing from the scope of the present invention.

10 : 회전테이블 20 : 연마 패드
30 : 웨이퍼 40 : 웨이퍼 케리어
50 : 슬러리 주입부10: rotating table 20: polishing pad
30: wafer 40: wafer carrier
50: Slurry injection part

Claims (3)

피연마물 표면의 형상과 역 형상을 갖는 기본형 제작단계; 상기 기본형에 이형성이 좋은 물질을 사용하여 피연마물 표면의
형상과 동일한 형상을 갖는 이형성 몰드 제작단계; 상기 이형성 몰드에 폴리머를 부어서 피연마물 표면의 형상과 역 형상
을 갖는 연마 패드 제작단계;를 포함하여 이루어진 것을 특징으로 하는 화학적기계적 연마장치의 연마 패드 제작방법.A basic mold manufacturing step having a shape and an inverted shape of the surface of the object to be polished; By using a material having good releasability in the basic form,
A mold releasing mold having the same shape as the mold; The polymer is poured into the mold releasing mold so that the shape and reverse shape
And a polishing pad forming step of forming a polishing pad on the polishing pad. 제1항에 있어서, 기본형 제작단계는 금속 에칭법 또는 레피드 프로토타입을 사용하여 제작하는 것을 특징으로 하는 화학
적기계적 연마장치의 연마 패드 제작방법.The method of claim 1, wherein the basic mold fabrication step is performed using a metal etch process or a feed prototype
Method of making a polishing pad of a mechanical polishing apparatus. 제1항에 있어서, 이형성 몰드 제작단계는 실리콘 수지를 사용하여 제작하는 것을 특징으로 하는 화학적기계적 연마장치의
연마 패드 제작방법.

The chemical mechanical polishing apparatus according to claim 1, wherein the releasing mold is fabricated using a silicone resin
Method of making a polishing pad.

KR1020160068013A 2016-06-01 2016-06-01 Polishing pad manufacturing method forchemicalmechanical polish KR20170136214A (en)

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