KR20170127333A - Ion source and method of generating hot electrons thereof - Google Patents

Abstract

The present invention relates to an ion source and a hot electron generation method thereof. The method adjusts voltage of an arc power supply which is mainly provided to an inner panel of an arc chamber to enable the voltage to be within a voltage range of 20-45 V and to decrease hot electron energy generated in a hot electron generation assembly, thereby preventing a hot electron from several collisions with an ion already ionized. Therefore, not only an unnecessary divalent cation or a trivalent cation having positive electricity can be reduced, but also a ratio of useful ions of an ion beam (extracted current) can be relatively improved.

Description

TECHNICAL FIELD [0001] The present invention relates to an ion source and a method for generating a thermoelectron,

The present invention relates to an ion source of an ion implanter, and more particularly to a method of generating a thermoelectron of an ion source.

An ion implanter is a device for injecting ions into a region to be doped in a semiconductor wafer in a semiconductor manufacturing process, and the ion source in the ion implanter is for generating an ion beam for ion implantation.

Referring to FIG. 8, the ion source 60 is mainly provided with a support assembly 62 and an arc chamber 63 sequentially on a base 61. An extraction electrode plate 631 having an extraction hole cavity 631a is formed in the opening of the upper surface of the housing 630 of the arc chamber 63. The bottom surface of the housing 630 is communicated with the intake pipe 64 And the dopant source gas flows into the arc chamber 63 through the intake tube 64. When a current is passed through the arc chamber 63 to generate a thermoelectron, the thermoelectrons collide with the dopant source gas to ionize the dopant source gas so as to produce ions having various positively and negatively charged electrons. In order to extract ions having a positive charge for ion implantation from the arc chamber 63, the extraction electrode plate 631 is made to conduct current again to generate an electric field, and extraction of the extraction electrode plate Ions having positive charges in the arc chamber 63 are sucked to the outside by the hole void 631a.

Currently, the ion source is divided into two types according to the generation method of the different thermoelectrons. One is the Indirectly-Heated-Cathode Ion Source (IHC Ion Source) and the other is the Bernas Ion Source. The relatively common indirect heating cathode source The structure and the generation method will be further explained.

9, a filament 634 electrically insulated from one of four inner plates 632, an inner bottom plate 633 and an inner plate 632 is provided in the housing 630 of the arc chamber 63 Further comprising a repellent 636 electrically insulated from the cathode 635 and the other opposing inner plate wherein the filament 634 is located outside of the cathode 635 and has a constant Keep spacing. The filament 634 is connected to the filament power supply unit 70 and the cathode 635 is connected to the bias power supply unit 71. The inner plate 632 of the arc chamber 63 and the inner bottom plate (633) are connected together with the arc power supply unit (72). Here, the filament power supply unit 70 and the bias power supply unit 71 are connected in series with the arc power supply unit 72.

Typically, the filament power supply unit 70 provides a high current power to the filament 634 and emits electrons after the filament 634 has increased in temperature (e.g., the temperature is higher than 1000 占 폚). At this time, the positive and negative electrodes of the bias power supply unit 71 are connected to the negative electrode 635 and the filament 634, respectively, so that when the bias power supply unit 71 provides a bias to the negative electrode, Since the cathode 635 exhibits a positive potential, electrons emitted from the filament 634 are accelerated to generate a current (bias current) between the filament 634 and the cathode 635. The electrons emitted from the filament 634 continuously collide with the outer side of the cathode 635 and the temperature of the cathode 635 is raised when the energy is changed to the cathode at the time of impact, Thereby realizing the action of heating. When the voltage provided by the arc power supply unit 72 reaches the inner plate 632 and the inner bottom plate 633 of the arc chamber 63, the negative electrode 635 is heated to a predetermined temperature, The hot cathode 635 discharges thermoelectrons into the space in the arc chamber 63.

Generally, the arc power supply unit 72 is connected to the inner plate 632 and the inner bottom plate 633 of the arc chamber 63 so as to form an accelerating electric field which causes the hot electrons to be accelerated into the arc chamber 63 The voltage provided is within the voltage range of 60V to 150V to improve the energy of the thermoelectron and the high energy thermoelectrons can collide the dopant source gas multiple times. The dopant source gas is ionized and then produced a number of different types of ions and is impinged on the dopant source gas of boron trifluoride (BF ₃ ), primarily electrons of high energy emitted, , But since the thermoelectrons at this time still have a sufficient energy, monovalent ions with a positive charge are likely to collide with bivalent or trivalent ions having a positive charge, and in general, , BF ₃ ⁺ , BF ₂ ⁺ , BF ⁺ , B ⁺ , and F ⁺ , and divalent ions with positive charge include BF ²⁺ , B ²⁺ , and F ²⁺ . However, the ion necessary for the B ⁺ ion implantation process for the semiconductor wafer is monovalent boron ion B ⁺ having only a positive electric charge. Accordingly, not only the ion beam extracted from the arc chamber 63 is boron ion B ⁺ As described above, monovalent and divalent ions having a positive charge are included.

The arc power supply unit 72 supplies a voltage of 85 V and the output of the arc power supply unit 72 is sequentially amplified and then the extracted current (ion beam) and useful monovalent boron ions (B ⁺ The region of interest (ROI) current of the wafer is measured as a region of interest (ROI), and the current that can be supplied to a terminal injected from the wafer surface is referred to as a region of interest (ROI) 1 shows the obtained measurement results. When generating an extraction current of 20 mA (ion beam), where the interest region current of the monovalent boron ion B ⁺ is only 0.92 mA and when generating an extraction current of 25 mA, the region of interest of the monovalent boron ion B ⁺ If only 1.94 is generated and 30 mA of extraction current is generated, the region of interest of the monovalent boron ion B ⁺ is only 3.07 and ... Thus, although the current in the arc power supply unit can be amplified to increase the small ion B ⁺ , unwanted ions still occupy a very high proportion of the extraction current, and the efficiency and mass for ion implantation are all the most desirable No, we need to improve.

Arc power output W
(Fixed arc voltage 85V)   Extraction current (ion beam) mA Of monovalent boron ions (B ⁺ )
Area of interest mA 85.9 20 0.92 113.9 25 1.94 142.8 30 3.07 174.3 35 4.01 206.6 40 4.59 236.3 45 4.61

Considering the low useful ion ratio in the extraction current generated from the conventional ion source, the main object of the present invention is to provide an ion source and a method of generating a thermoelectron of the same which allow all useful ions to improve the ratio in extraction current will be.

According to another aspect of the present invention, there is provided an ion source comprising: an ion source including an arc chamber and a power supply, the arc chamber including a plurality of inner walls, A housing having a top opening and a bottom suction hole for allowing a dopant source gas to flow into the arc chamber; A plurality of inner panels mounted on corresponding inner walls of the housing; An extraction electrode plate connected to cover the upper opening of the housing and having a first extraction gap formed in the middle thereof; And a thermoelectrically generating assembly electrically insulated on one side of the housing and on an inner panel corresponding to one side of the housing, the power supply being connected to the thermoelectrically generating assembly, A heating power supply unit for heating the substrate to a predetermined temperature; And an arc power supply unit connected to the plurality of inner panels and the thermoelectrically generating assembly and providing an output voltage within a voltage range of 20V to 45V.

The present invention primarily adjusts the voltage of the arc power supply unit of the ion source to within the voltage range of 20V to 45V to reduce the thermoelectron energy generated by the thermoelectrically generated assembly to prevent the thermoelectrons from colliding with the already ionized ions multiple times Thereby effectively reducing a divalent or trivalent ion having an unnecessary positive electric charge, so that the ratio of useful ions in the ion beam (extraction current) can be relatively improved.

In order to achieve the above object, the main technical means used in the present invention is to provide an ion source as described below, wherein the ion source includes an arc that provides inner panels on a plurality of inner walls of the housing to form a discharge space, Chamber, wherein a thermoelectrically generating assembly is electrically insulated through the inner panel and the inner wall of the corresponding housing, wherein the thermoelectron generating method of the ion source includes providing a heating power to the thermoelectrically generating assembly, Releasing the thermoelectrons after the thermoelectrically generated assembly is heated to a predetermined temperature; And providing arc power to the plurality of inner panels and the thermoelectric generating assembly to provide a voltage within a voltage range of 20V to 45V so as to accelerate and attract the hot electrons to the discharge space of the arc chamber.

The present invention mainly involves adjusting the voltage of the arc power supply unit of the ion source to within a voltage range of 20V to 45V to reduce the thermoelectron energy generated by the thermoelectrically generated assembly so that the thermoelectrons collide the ion Thereby effectively reducing the divalent or trivalent ions having an unnecessary positive electric charge, so that the ratio of useful ions in the ion beam (extraction current) can be relatively improved.

1 is a three-dimensional external view of an ion source of the present invention.
Fig. 2 is a partial sectional view of Fig. 1. Fig.
FIG. 3A is a schematic diagram showing an electrical connection between an arc chamber and an electric power supply of an indirectly heated cathode ion source of the present invention. FIG.
FIG. 3B is a schematic view showing an electrical connection between the arc chamber of the burnishing type ion source of the present invention and the power supply unit. FIG.
FIG. 4 is a schematic view showing an electrical connection between the arc chamber of FIG. 1, the suppression electrode plate, and the ground electrode plate.
FIG. 5 is a graph of the arc power output and extraction current of the conventional indirectly heated cathode ion source of FIG. 3A.
6 is a three-dimensional external view of a first preferred embodiment of the heat dissipating device of the present invention.
Fig. 7 is a three-dimensional external view of a second preferred embodiment of the heat dissipating device of the present invention.
8 is a three-dimensional external view of a conventional indirectly heated cathode ion source.
FIG. 9 is a schematic view showing an electrical connection between an arc chamber and a power supply unit of a conventional indirectly heated cathode ion source.

The present invention improves the ion source of the ion implanter to improve the ratio of useful ions in the extraction current generated by the ion source, and the technical content of the present invention will be described in the following specific embodiments and actual measurement data.

1 is a three dimensional external view of the ion source 1 of the present invention which mainly shows the heat radiating device 20 and the arc chamber 10 sequentially on the upper surface 301 of the base 30 Referring to FIG. 3A, an external power supply unit 50 is electrically connected to the arc chamber 10.

3A and 3B show a first preferred embodiment of the present invention, i.e. the ion source is an indirectly heated cathode ion source, wherein the arc chamber 10 comprises a housing 11, a plurality Wherein the thermoelectrically generating assembly 14 is an indirectly heated cathode assembly in which the inner panel 12, 12a, 12b, the extraction electrode plate 13 and the thermoelectrically generating assembly, Wherein the upper opening is connected to cover the extraction electrode plate 13 and the bottom intake hole 111 is connected to the intake pipe 40 of the base 30 ). At the intermediate position of the extraction electrode plate 13, a first extraction hole gap 131 is formed parallel to the longitudinal direction. The plurality of inner panels 12, 12a, 12b are formed on corresponding inner walls of the housing 11 to form the discharge space 100, respectively. The indirect heating type cathode assembly is electrically insulated from one side of the housing 11 and the inner panel 12a corresponding to one side of the housing and includes a filament 141 and a cathode 142 Wherein the gap between the filament 141 and the cathode 142 is maintained. The inner panel 12b, which is opposed to the other side and the other side of the housing 11 of the arc chamber, is provided with a repelling member 143. The restraining electrode plate 15 and the grounding electrode plate 16 are further provided apart from each other in addition to the extraction electrode plate 13 of the arc chamber 10 as shown in FIG. The extraction electrode plate 15 is provided on the outer side of the extraction electrode plate 13 so as to be spaced apart from the extraction electrode plate 13 to form a second extraction gap 151. The second extraction gap 151 is connected to the extraction electrode plate 13, Thereby aiming at the first extraction gap 131. The ground electrode plate 16 is spaced apart from the restricting electrode plate 15 to form a third extraction gap 161 and the third extraction gap 161 is formed on the surface of the suppression electrode plate 15 And the second extraction gap 151 is aimed.

The filament power supply unit 51 includes a filament power supply unit 51, a bias power supply unit 52 and an arc power supply unit 53. The filament power supply unit 51 includes a filament 141, And the cathode and the cathode of the bias power supply unit 52 are connected to the cathode 142 and the filament 141, respectively, so that the filament 141 is heated to a predetermined first temperature, So that an accelerated electric field is formed between the cathode 142 and the filament 141. The filament 141 induces electrons to collide with the cathode 142 so that the cathode 142 And the cathode 142 is heated to a predetermined second temperature and then releases the thermions. The positive and negative electrodes of the arc power supply unit 53 are respectively connected to the plurality of inner panels 12, 12a and 12b and the negative electrode 142, And an accelerating electric field is formed between the cathode 142 and each inner panel 12, 12a and 12b so that a thermoelectron of the cathode 142 is discharged to the discharge space 100 ), And the introduced dopant source gas is ionized to generate various kinds of ions.

4, in order to smoothly extract ions having a positive charge from the first extraction hole gaps 131 of the extraction electrode plate 13 of the arc chamber 10 to form the ion beam 100a, The electrode plate 13 is connected to the positive electrode of the first high voltage power supply unit 54 and the suppression electrode plate 15 is connected to the negative electrode of the second high voltage power supply unit 55, The positive electrode of the unit 55 is connected to the negative electrode of the first high-voltage power supply unit 54. An accelerating electric field is formed between the suppressing electrode plate 15 and the extraction electrode plate 13 to accelerate ions having positive charges in the arc chamber 10 and to pass through the first extraction gap 131 The direction of movement of the ions with the positron is regulated, and the direction of movement of the ions with the positron again is regulated. The ground electrode plate 16 is connected to the ground, and bypasses electrons generated in the process of extracting the ion beam to the ground.

According to another aspect of the present invention, there is provided a method of thermoelectrically generating an indirectly heated cathode ion source, the method comprising: supplying a heating power source to the filament to cause electrons to be emitted after the filament is heated to a predetermined first temperature; Wherein the cathode is connected to the positive electrode of the bias power supply to supply a bias power to the cathode and the filament and to attract the electrons emitted from the filament to improve the temperature of the cathode, Releasing a hot electron into the arc chamber; And connecting the plurality of inner panels to the positive electrode of the bias power supply to supply an arc power to the plurality of inner panels and the negative electrode and to suck up the hot electrons by acceleration, wherein the arc power is 20V to 45V Lt; RTI ID = 0.0 > of < / RTI >

Similarly, in a second preferred embodiment of the present invention, as shown in FIG. 3B, its majority structure is the same as the first preferred embodiment shown in FIG. 3A, except that the ion source is a Burrs type ion source, The thermoelectrically generating assembly 14'of the apparatus 10'is a filament 141 and its power supply 50'includes a filament power supply unit 51 and an arc power supply unit 53. [ The filament power supply unit 51 is connected to the filament 141 to allow electrons to be emitted after the filament 141 is heated to a predetermined first temperature and the positive electrode of the arc power supply unit 53 12a and 12b and the negative electrode is connected to the filament 141 of the filament power supply unit 51 and connected to the inner panel 12, 12b, the arc power supply unit 53 provides an output voltage within a voltage range of 20V to 45V.

 The dopant source gas used in the present invention may be selected from the group consisting of germanium tetrafluoride, germane, boron trifluoride, diborane, silicon tetrafluoride, silane, arsine, or phosphine. In addition, the dopant source gas used in the present invention may be a dopant gas composition synthesized with an dopant gas and an additional gas, and the dopant gas may include germanium tetrafluoride, germane, boron trifluoride, diborane, Hydrogen gas, nitrogen gas, helium gas, ammonia gas, fluorine gas, or xenon gas, and each of said dopant gases is at least one selected from the group consisting of One can be mixed together with the dopant gas composition and used as the dopant source gas of the present invention or each of the dopant gases and the additional gas therebetween may be used together to cause them to flow together into the arc chamber Co-flow gas and can be used as the dopant source gas of the present invention.

Hereinafter, the desired arc power supply voltage obtained after experimental measurement of various dopant source gases as described above will be further described.

When the dopant source gas introduced from the arc chamber contains boron trifluoride (BF3) or the dopant source gas is boron trifluoride (BF3), the voltage of the arc power source is 30V to 45V.

When the dopant source gas introduced from the arc chamber contains arsine (AsH ₃ ) or phosphine (PH ₃ ), the voltage of the arc power source is 25V to 40V.

When the dopant source gas introduced from the arc chamber contains silicon tetrafluoride (SiF ₄ ), the voltage of the arc power source is 25V to 40V.

As can be seen from the above description, the present invention controls the voltage of the arc power source of the inner panel of the arc chamber to be within the voltage range of 20V to 45V, compared with the conventional indirect heating type cathode or the burner type ion source. However, the accelerating electric field constructed through the voltage of the relatively low arc power source causes the thermoelectron energy generated by the thermoelectric generating assembly to be relatively reduced. Theoretically, the energy required for the process in which the hot electrons collide with the first-value electrons of the first outermost side of the dopant source gas in front of the device is not high, but may be any energy that provides the hot electrons in an accelerating electric field of only 8V to 15V. If the electrons of the second value of the dopant source gas are further collided off, the thermoelectron can only be realized with the greater energy provided by the accelerating field above 22V. However, since the direction of impact of the thermoelectron can not be controlled, the present invention adjusts the voltage of the arc power source within the voltage range of 20 V to 45 V, taking into account the impact force of the thermoelectron and the extraction current (ion beam) Only the electrons of the first outermost value of the dopant source gas can be collided and released, so that the present invention reduces the voltage of the arc power source compared to the conventional indirectly heated cathode or burner type ion source, The energy of the resulting thermon is relatively low, but the energy is reduced after a relatively low energy thermon is impacted, thereby reducing the chance of colliding bivalent or trivalent ions.

In the present invention, similarly, boron trifluoride is introduced into the arc chamber of the present invention to ionize it, the voltage of the arc power source is set to 40 V, and the arc current (sequential increase in output) (Ion beam) and useful univalent boron ions (B ⁺ ) of interest in the arc chamber, wherein the region of interest is the current of interest to the terminal injecting at the wafer surface into the interest Region of interest (ROI), and the actual measurement result is as shown in Table 2.

Arc power output W
(Fixed arc voltage 40V)    Extraction current (ion beam) mA Of monovalent boron ions (B ⁺ )
Area of interest mA 134.4 20 1.55 177.6 25 2.54 222.0 30 3.92 266.4 35 4.98 310.8 40 5.78 360.0 45 6.43

As shown in FIG. 5, the voltage of the arc power source of the present invention is in the voltage range of 20V to 45V, and the voltage range of the arc power source of the conventional indirectly heated cathode ion source is 60V to 150V. When the voltage of the arc power source set by the exemplary power supply unit 50 is 40 V and the voltage of the conventional arc power source is 85 V, the extraction current measured after flowing the boron trifluoride into the arc chamber and the useful monovalent boron Ions at the same extraction current (25 mA, 30 mA, 35 mA, 40 mA, and 45 mA), and the graph of the area current of interest (L2) of the monovalent boron ions of the present invention (L1) of the indirectly heated cathode ion source can be remarkably compared.

1 and 2, the ion source 1 of the present invention is connected to the base 30 through the plurality of elastic hook assemblies so that the heat dissipating device 20 and the arc chamber 10 are firmly connected to each other Four equally spaced L-shaped fasteners 32 are screwed to the lower substrate 31 of the base 30 and one end of the spring 33 is hooked to each of the fasteners 32, One end of the hook strip 34 is hooked to the other end of the spring 33 and is hooked on two relatively long edges of the extraction electrode plate 13 of the arc chamber 10, The arc chamber 10 and the heat dissipating device 20 below the arc chamber 10 are connected to the base 33. The spring 34 is provided at the other end of the arc chamber 10, 30 on the upper surface 301 of the housing.

The temperature of the arc chamber is raised accordingly when the output of the arc power source is amplified so that the present invention can be applied to a high heat dissipating heat dissipating device 20 including a heat dissipating main body 21 and at least one cooling medium tube 22 use. The bottom surface 212 of the heat dissipating body 21 is installed on the upper surface 301 of the base 30 and the upper surface 211 is bonded to the bottom surface of the housing 11 of the arc chamber The two relatively short sides 214 of the heat dissipating body 21 of the present embodiment gradually become shorter from the upper surface 211 toward the lower inner side and the bottom surface 214 of the heat dissipating body 21 Referring to FIG. 7, this is an example of another heat dissipating device 20 ', and two relatively short sides 214 of the heat dissipating main body 21 are formed on the upper surface 211, And the bottom surface 212 of the heat radiating body 21 is smaller than the top surface 211 and is smaller than the heat radiating apparatus 30 shown in Fig. The amount of heat of the arc chamber 10 is quickly transmitted to the upper surface 211 of the heat dissipating main body 21, You can gather them together. 2, a groove 215 is formed in the side surface 213 of the heat dissipating body 21, which corresponds to the intake tube 40, so as not to interfere with the intake tube 40, And the recess 215 penetrates the upper surface 211 and the bottom surface 212 of the heat dissipating main body 21 and is spaced from the outer wall of the intake tube 40 and the inner wall surface of the recess 215. [ The intake tube 40 is not in contact with the heat dissipation body 21. Each of the cooling medium pipes 22 passes through the heat dissipation main body 21 and two manifolds 221 and 222 protrude downward from the bottom surface of the heat dissipation main body 21, Is inserted into the base 30 from the top surface 301 of the base 30 so as to be connected to the base 30. One of the manifolds 221 is used as an inlet tube of the cooling medium and the other manifold 222 is used as a discharge tube of the cooling medium so that the cooling medium can flow in the cooling medium tube 22 have. Preferably, the cooling medium may be a cooling gas or a cooling liquid.

The heat dissipating devices 20 and 20 'of the present invention are mainly attached to the bottom surface of the arc chamber 10 in a planar manner and in addition to providing more firm support, The heat transfer efficiency of the arc chamber is improved and the flow in the cooling medium pipe 22 is mixed again so that the cooling medium rapidly removes the heat of the heat radiation main body 21 to make the total heat radiation efficiency better, The heat dissipating devices 20 and 20 'are mainly attached to the bottom surface of the arc chamber 10 in a planar manner so that even if the housing is deformed by heat under high temperature operation, It is possible to further prevent the clogging of the bottom surface intake hole of the arc chamber.

Although the present invention has been fully described in connection with the preferred embodiments thereof with reference to the accompanying drawings, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes and modifications can be made thereto without departing from the scope of the technical solution of the present invention, All of the minor modifications, equivalents, and alternative constructions that have been made to the above embodiments by the technical nature of the present invention are still within the scope of the technical solution of the present invention without departing from the technical solution of the invention.

1: ion source 10, 10 ': arc chamber 100: discharge space
100a: ion beam 11: housing 111: bottom surface intake hole
12, 12a, 12b: inner panel 13: extraction electrode plate 131: first extraction gap
14, 14 ': Thermoelectron generating assembly 141: Filament
142: negative electrode 143: repulsive member 15: suppression electrode plate
151: second extraction gap 16: ground electrode plate 161: third extraction gap
20, 20 ': heat dissipating device 21: heat dissipating body 211: upper surface
212: bottom surface 213: side surface 214: short side
215: groove 216: space 22: cooling medium tube
221, 222: manifold 30: base 301: upper surface
31: lower base 40: intake pipe
50, 50 ': Power supply
51: filament power supply unit
52: bias power supply unit 53: arc power supply unit
54: first high-voltage power supply unit 55: second high-voltage power supply unit
60: ion source 61: base 62: support assembly
63: arc chamber 630: housing 631: extraction electrode plate
631a: extraction hole cavity 632: inner side plate 633: inner bottom plate
634 filament 635 negative pole 636 repulsion
64: intake tube 70: filament power supply unit
71: bias power supply unit 72: arc power supply unit

Claims (12)

An arc chamber and a power supply,
The arc chamber
A housing including a plurality of inner walls, the housing having an upper opening and a bottom surface intake hole for allowing a dopant source gas to flow into the arc chamber;
A plurality of inner panels mounted on corresponding inner walls of the housing;
An extraction electrode plate connected to cover the upper opening of the housing and having a first extraction gap in the middle; And
A thermoelectrically generating assembly electrically insulated on one side of the housing and on an inner panel corresponding to one side of the housing,
The power supply device includes:
A heating power supply unit connected to the thermoelectrically generating assembly, the heating power supply unit heating the thermoelectrically generating assembly to a predetermined temperature; And
And an arc power supply unit connected to the plurality of inner panels and the thermoelectric generation assembly, the arc power supply unit providing an output voltage within a voltage range of 20V to 45V. The apparatus of claim 1, wherein the thermoelectrically generating assembly includes a filament and a cathode while going from the outside to the inside, wherein the filament and the cathode are spaced apart from each other by a predetermined distance, Wherein the power supply unit is connected to the filament, and the power supply unit further comprises a bias supply supply unit in which a positive electrode and a negative electrode are connected to the cathode and the filament, respectively, And the negative electrode is connected to the plurality of inner panels and the negative electrode, respectively. The heating power supply unit according to claim 1, wherein the thermoelectric generating assembly includes a filament, the heating power supply unit is connected to the filament so that the filament is heated to the preset temperature, and the positive electrode and the negative electrode of the arc power supply unit And a plurality of inner panels and an ion source connected to the filaments. The method of claim 1, wherein the dopant source gas is selected from the group consisting of germanium tetrafluoride, germane, boron trifluoride, diborane, silicon tetrafluoride, An ion source that is silane, arsine, or phosphine. The method of claim 1, wherein the dopant source gas is an dopant gas composition formed by mixing dopant gases and an additional gas, wherein the dopant gas is germanium tetrafluoride, germane, boron trifluoride Wherein the additional gas is an argon gas, a hydrogen gas, a nitrogen gas, a helium gas, an ammonia gas, a fluorine gas, or a xenon gas, and the dopant gas is at least one selected from the group consisting of An ion source that is mixed with one of the additional gases to constitute a dopant gas composition. The ion source according to claim 5, wherein the dopant gas and the additional gas flow together into a bottom surface intake hole of the arc chamber to form a co-flow gas. The arc power supply unit according to any one of claims 4 to 6, wherein when the dopant source gas introduced from the arc chamber contains boron trifluoride (BF3), the output voltage of the arc power supply unit is 30 V to 45 V, When the dopant source gas that flows in from said arc chamber containing arsine (AsH ₃₎ or phosphine (PH _3), the output voltage of the arc power supply means is 25V to 40V, a dopant is introduced from the arc chamber And an output voltage of the arc power supply unit is 25V to 40V when the source gas contains silicon fluoride (SiF ₄ ). 4. The plasma processing apparatus according to any one of claims 1 to 3, further comprising: an inhibition electrode plate spaced apart from the extraction electrode plate to form a second extraction gap to be collimated with the first extraction gap of the extraction electrode plate; And
Further comprising a ground electrode plate spaced apart from the suppression electrode plate and formed with a third extraction gap for collimating with a second extraction gap of the suppression electrode plate,
The extraction electrode plate is coupled to the positive electrode of the first high voltage power supply unit, the inhibition electrode plate is coupled to the negative electrode of the second high voltage power supply unit, and the positive electrode of the second high voltage power supply unit is connected to the first high voltage power supply unit Wherein the ground electrode plate is coupled to the negative electrode of the unit, and the ground electrode plate is coupled to the ground. [9] The apparatus of claim 8, further comprising: a base on which an intake pipe is protruded from an upper surface; And
And a heat dissipating device installed between an upper surface of the base and a bottom surface of the housing of the arc chamber. 10. The heat sink according to claim 9,
Wherein a bottom surface of the bottom plate is attached to the bottom surface of the bottom plate of the arc chamber, and a top surface corresponding to the bottom surface of the arc chamber is provided with a groove, A heat dissipation main body having a gap between the outer wall of the intake tube and the inner wall of the groove; And
And at least one cooling medium tube extending through the heat dissipation body to draw two manifolds downward from the bottom surface of the heat dissipation body and to fill the cooling medium flowing through the two manifolds respectively. 11. The ion source according to claim 10, wherein the cooling medium is a cooling gas or a cooling liquid. 12. The apparatus of claim 11, further comprising a plurality of elastic hook assemblies,
Each of the elastic hook assemblies includes:
An L-shaped fixture screwed to the lower substrate of the base;
A spring whose one end is engaged with the L-shaped fastener and whose position is determined;
And a hook strip having one end hooked to the other end of the spring and a hook formed at the other end so as to be hooked to a side of the extraction electrode plate located in the arc chamber.

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