KR20170124483A - Template for growing iii-nitride semiconductor layer, iii-nitride semiconductor light emitting device and method for manufacturing the sames - Google Patents

Abstract

The present disclosure relates to a template for growing a Group III nitride semiconductor layer, a Group III nitride semiconductor light emitting device, and a method for manufacturing the same. The template comprises: a growth substrate having a first surface and a second surface facing the first surface, and having a groove extending from the first surface to the inside of the growth substrate; a heat dissipation insert inserted and fixed in the groove; and a nucleation layer formed on the first surface from which a part is removed.

Description

TECHNICAL FIELD [0001] The present invention relates to a III-nitride semiconductor light-emitting device, a III-nitride semiconductor light-emitting device, and a method for manufacturing the same. BACKGROUND ART [0002]

The present disclosure relates generally to a template for growing a Group III nitride semiconductor layer, a group III nitride semiconductor light-emitting device, and a method of manufacturing the same, and more particularly to a template for growing a Group III nitride semiconductor layer, A semiconductor light emitting device, and a method of manufacturing the same.

Here, the Group III nitride semiconductor means a compound semiconductor made of Al (x) Ga (y) In (1-xy) N (0? X? 1, 0? Y? 1, 0? X + , A group III nitride semiconductor light emitting device includes a compound semiconductor layer made of Al (x) Ga (y) In (1-xy) N (0? X? 1, 0? Y? 1, 0? X + Emitting diode such as a light emitting diode and a laser diode, and further includes a material composed of other group elements such as SiC, SiN, SiCN and CN, or a semiconductor layer made of these materials no.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 and 2 show an example of a semiconductor light emitting device disclosed in Japanese Patent Laid-Open No. 08-083929. The semiconductor light emitting device includes a growth substrate 100, a seed layer 200 grown on the growth substrate 100 a first semiconductor layer 300 grown on the seed layer 200, a first semiconductor layer 300 grown on the seed layer 200, and an active layer (not shown) grown on the first semiconductor layer 300 through recombination of electrons and holes A first electrode 700 for supplying one of electrons and holes to the second semiconductor layer 500 and the first electrode 700 for supplying one of electrons and holes to the first semiconductor layer 300, And a second electrode 800 for supplying the remaining one of the electrons and the holes. The second electrode 800 is formed by forming an opening 110 formed in the growth substrate 100 and forming an electrical connection 810 formed through plating after the semiconductor layers 200 300 400 500 are completely grown And is electrically connected to the first semiconductor layer 300. The electrical connections 810 provide electrical passages to the growth substrate 100 (e.g., an Al ₂ O ₃ substrate) that is typically made of non-conductive material, while also functioning as a heat dissipation pass. However, it is not easy to form the electrical connection 810 through plating on the growth substrate 100, which usually has a thickness between 80 mu m and 180 mu m.

3 is a diagram showing an example of a semiconductor light emitting device disclosed in U.S. Patent Application Publication No. 2008-0315240. The semiconductor light emitting device includes a growth substrate 100 on which an opening 110 is formed, a growth substrate on which an opening 110 is formed A first electrode 700 for supplying one of electrons and holes to the semiconductor layer 200, 300, 400 and 500 grown on the first semiconductor layer 100 and a second electrode 700 for supplying one of electrons and holes to the first semiconductor layer 300 And a second electrode 800 electrically connected to the first semiconductor layer 300 through an electrical connection 810 at the backside of the growth substrate 100 to supply the first semiconductor layer 300. [ Preferably, the current diffusion electrode 600 is formed on almost the entire surface of the second semiconductor layer 500 for current spreading. This semiconductor light emitting device differs from the semiconductor light emitting device shown in FIGS. 1 and 2 in that the opening 110 is first formed in the growth substrate 100 and then the semiconductor layers 200, 300, 400 and 500 are grown. The openings 900 can be formed in the semiconductor layers 200 300 400 500 in the growth of the semiconductor layers 200 300 400 500 and the ohmic electrodes 820 can be formed in the first semiconductor layers 30, and the ohmic electrode 820 is electrically connected to the second electrode 800. It is also possible to grow the semiconductor layers 200, 300, 400, 500 so that the opening 900 is not formed on the opening 110 by adjusting the growth conditions, and in this case, after the growth is completed, It is possible. This prior art teaches various plating methods for forming a stable electrical connection 810.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a template for growing a Group III nitride semiconductor layer, comprising: a growth substrate having a first surface and a second surface opposite the first surface; A growth substrate having grooves extending from the first surface into the growth substrate; A heat dissipation insert inserted and fixed in the groove; And a nucleation layer formed on the first surface from which the partially removed Group III nitride semiconductor layer is grown.

According to another aspect of the present disclosure, in a III-nitride semiconductor light emitting device, a growth substrate having a first surface and a second surface opposite to the first surface, A growth substrate having grooves extending from the surface to the inside of the growth substrate; A heat dissipation insert inserted and fixed in the groove; A nucleation layer formed on a first side from which a portion is removed; And a second semiconductor layer grown on the seed layer, the first semiconductor layer having a first conductivity, the active layer generating light through recombination of electrons and holes, and the second semiconductor layer having a second conductivity different from the first conductivity, A Group III nitride semiconductor layer; A first electrode electrically connected to the second semiconductor layer; And a second electrode electrically connected to the first semiconductor layer. The Group III nitride semiconductor light emitting device of the present invention includes:

According to another aspect of the present disclosure, there is provided a method of fabricating a template for growing a Group III nitride semiconductor layer, the method comprising: providing a first surface and a second surface opposite the first surface, Forming a groove on the growth substrate, the groove extending from the first surface into the growth substrate; Inserting a heat dissipating insert in the groove; A method for fabricating a template for growing a Group III nitride semiconductor layer, comprising: forming a nucleation layer on a first surface of the substrate by physical vapor deposition (PVD) / RTI >

According to another aspect of the present disclosure, there is provided a method of fabricating a Group III nitride semiconductor light emitting device, comprising the steps of: providing a growth substrate having a first surface and a second surface opposite to the first surface, Forming a groove extending from the first surface into the growth substrate; Inserting a heat dissipating insert in the groove; Forming a nucleation layer on the first side through a first deposition process; A first semiconductor layer having a first conductivity, an active layer for generating light through recombination of electrons and holes, and a second conductive layer having a second conductivity different from that of the first conductive layer by successively forming a seed layer on the seed layer by a second vapor deposition method different from the first vapor deposition method. Growing a plurality of Group III nitride semiconductor layers having a first semiconductor layer and a second semiconductor layer; And electrically connecting the first electrode to the second semiconductor layer and the second electrode to the first semiconductor layer, respectively, according to the method of manufacturing the Group III nitride semiconductor light emitting device.

According to another aspect of the present disclosure, there is provided a method of fabricating a Group III nitride semiconductor light emitting device, comprising the steps of: providing a growth substrate having a first surface and a second surface opposite to the first surface, Growing a plurality of Group III nitride semiconductor layers; Removing a portion of the plurality of Group III nitride semiconductor layers and then removing a portion of the growth substrate from the first surface to form grooves extending into the growth substrate; Inserting a heat dissipating insert in the groove; And electrically connecting the plurality of Group III nitride semiconductor layers to the heat dissipation insert. The present invention also provides a method of manufacturing a Group III nitride semiconductor light emitting device.

This will be described later in the Specification for Implementation of the Invention.

Figs. 1 and 2 are views showing an example of a semiconductor light emitting device disclosed in Japanese Patent Laid-Open No. 08-083929,
3 is a view showing an example of a semiconductor light emitting device disclosed in U.S. Patent Application Publication No. 2008-0315240,
4 is a diagram showing an example of a template for growing a Group III nitride semiconductor layer according to the present disclosure and an example of a method for manufacturing the same,
FIGS. 5 and 6 are views showing an example of a III-nitride semiconductor light emitting device according to the present disclosure and an example of a method of manufacturing the same;
7 is a view showing another example of a Group III nitride semiconductor light-emitting device according to the present disclosure,
8 is a view showing another example of a Group III nitride semiconductor light-emitting device according to the present disclosure,
9 is a view showing another example of a Group III nitride semiconductor light emitting device according to the present disclosure,
10 is a view showing still another example of the III-nitride semiconductor light emitting device according to the present disclosure,
11 is a view showing another example of a Group III nitride semiconductor light-emitting device according to the present disclosure,
12 is a view showing another example of a Group III nitride semiconductor light emitting device according to the present disclosure,
13 is a view showing another example of a method of manufacturing a Group III nitride semiconductor light-emitting device according to the present disclosure.

FIG. 4 shows an example of a template for growing a Group III nitride semiconductor layer according to the present disclosure and a method of manufacturing the same, wherein a template 21 for growing a Group III nitride semiconductor layer has a first surface 11 ) And a first substrate (10) having a second surface (12) opposite the first surface (11) and having a groove (14) extending from the first surface (11) And a nucleation layer 20 formed on the first side 11, as shown in FIG.

The first substrate 10, which is a growth substrate, is made of a material capable of growing a Group III nitride semiconductor layer. For example, the first substrate 10 may be made of Al ₂ O ₃ , SiC, GaN, AlN, ZnO, And a light-transmitting material, Al ₂ O _3, is a representative material.

The grooves 14 may be formed by laser ablation or may be formed by chemical wet etching, dry etching, sandblasting, ultrasonic drilling, or the like . The shape of the groove 14 is not particularly limited, but may be circular, and the width is preferably 500 nm to 500 μm. When the width is less than 500 nm, there is a problem that it is difficult to insert the insert 33. When the width exceeds 500 탆, there is a problem that the possibility of cracking in the manufacturing process increases. It is preferable that the number of the grooves 14 is one or more per semiconductor element. In particular, in the case of functioning as an electric path, it is preferable that the number of grooves 14 corresponds to the number of electrodes of the semiconductor light emitting element. And depth may vary depending on the type of device fabricated on the first substrate 10 and the grooves 14 may extend from the first side 11 to the second side 12 to penetrate the first substrate 10 Of course.

The insert 33 functions as a heat dissipation path. It is also possible for the insert 33 to function as an electrical pathway if the insert 33 is finally in the form of leading from the first side 11 to the second side 12 of the first substrate 10. Thus, the insert 33 can function as a heat dissipation path and / or an electrical path.

In the example shown in Figs. 1 to 3, although the electrical connection 810 is mainly formed by plating, there is a problem that the plated metal itself thermally expands, and the plating material is densely formed in the narrow and long groove 14 It is not easy to create bad issues, which leads to the complexity of subsequent processes, which makes manufacturing costly problems, and needs to be improved. As an example of electrolytic plating, an electrical connection 810 is formed by subjecting a plating material to a reduction reaction with a plating material (for example, copper) on a (+) pole and a plating object as a (-) pole, In this way, there is a limit to constructing the electrical connection 810 densely.

The present disclosure solves this problem by constructing the insert 33 with substances in the form of a rod or a wire. (Such as nickel wire, cobalt wire, and iron wire) are available (which can be easily found through Google search), and these wires are cut to the depth of the grooves 14 to form rod- The insert 33 of FIG. On the other hand, since nickel, cobalt, iron, or the like is a ferromagnetic material having a ferromagnetism, a rod-shaped insert 33 is placed on the first surface 11, It is possible to insert the insert 33 into the groove 14. A technique of inserting the insert 33 into the groove 14 using a magnet is disclosed in U.S. Patent No. 3,736,651. When inserting the insert 33 into the groove 14 using the magnet, it is preferable that the insert 33 is made of a ferromagnetic material such as Ni, Co, Fe or a ferromagnetic alloy containing one of them. By forming the insert 33 in a solid-state rod, that is, by forming the insert 33 in a densely formed form compared with the electrical connection 81 formed through plating, thermal expansion can be suppressed while improving the thermal conductivity and the electric conductivity . As a result, it is possible to eliminate a crack of the semiconductor element, separation (separation of bonding) between the semiconductor element and the support substrate, and the like. The rod-shaped insert 33 may be formed entirely of a ferromagnetic material, a part of the ferromagnetic material may be formed of a ferromagnetic material, or the surface of the insert 33 may be coated with a paramagnetism material such as Ag, Au or Cu.

It is also possible to form the insert 33 by inserting a continuous material in the form of a liquid into the groove 14 instead of directly inserting the solid rod type insert 33 into the groove 14. For this, a wire bonding method used for electrically connecting the first electrode 700 shown in FIGS. 1 to 3 to a PCB or the like, that is, a wire bonder may be used. The wire bonding method and the wire bonder are widely used in the semiconductor field, and further explanation is omitted. By using the wire bonding, it becomes possible to insert the insert 33 in the form of a liquid-phase wire into the groove 14, which is continuously and inexpensively connected to the densely arranged groove 14. The insert 33 of this type may be made of Au, Au alloy, Ag, Ag alloy, Cu, Cu-alloy, Al, Al-alloy or the like suitable for wire bonding.

The insert 33 may be made of a metal powder and / or alloy powder having high reflectivity and / or high heat dissipation property, a ceramic powder having high heat dissipation property (e.g., AlN, BN, SiC, AlSiC) Into the grooves 14 and then heat-treating them. In order to insert such a material into the groove 14, a dispenser used for applying an encapsulant may be used. In this case, there is an advantage that the insert 33 can be fixed to the groove 14 without using the fixing material 34 to be described later, and the subsequent step of polishing the first face 11 may be omitted . Examples of the high-reflectivity and high-heat-radiating material include metals of Al, Ag, Rh, Pt, Pd, Au, Cr, Ni, Mo, Ti and Cu or alloys combining at least one of these metals.

It is necessary to fix the insert 33 to the groove 14 or to fill the groove 14 when the insert 33 is formed without using plating or PVD. For this purpose, the fixing material 34 is formed before or after inserting the insert 33 into the groove 14. The insert 33 can be inserted into and fixed to the groove 14 by applying (e.g., spin coating) the fixation material 34, and drying or heat treating it. There is no particular limitation as long as the material can withstand the high temperature (for example, 1000 ° C or higher) at which the III-nitride semiconductor layer is grown with the fixing material 34. The SOC (Spin-on-Glass), BCB (Benzocyclobutene) Organic low dielectric materials such as photoresist, Epoxy-based Polymers, Silicone, Parylene, and SU-8 may be used. In addition, in the case of the fixing material (34), in addition to the organic low dielectric material, in order to effectively dissipate heat, a viscous liquid material, a paste material including a metal, alloy or ceramic powder having high thermal conductivity may be used do.

Alternatively, a highly reflective and / or highly thermally conductive material 35 such as Al, Ag, Rh, DBR (distributed Bragg reflector) or ODR (omni directional reflector) is first formed in the trench 14 and the insert 33 and SOG It is also possible to fix the insert 33 to the groove 14 by inserting the fixing material 34 such as the insert 33 into the groove 14 and then performing the heat treatment. It is possible to reduce the absorption of light by the insert 33 and the fixing substance 34 by introducing the highly reflective and / or highly thermally conductive substance 35, so that the selection of the material of the insert 33 and the fixing substance 34 The width can be widened while the optical loss can be reduced.

It is also possible to form the fixing material 34 in the groove 14 before inserting the insert 33 into the groove 14. The advantage of this method is that the insert 33 can be inserted while covering the rough surface of the groove 14 formed by laser drilling or the like, which facilitates the insertion of the insert 33. The insert 33 is then inserted and through the drying or heat treatment the insert 33 can be fixed to the groove 14 together with the fixing material 34. In this case, the fixing material 34 may be composed of the above-mentioned materials. However, by applying a metal material having bonding properties to the fixing material 34, the fixing of the insert 33 can be performed before or after the drying or heat treatment And wire bonding can be facilitated. It is also possible to directly deposit the bonding metal material. After the fixing material 34 is formed, the fixing material 34 existing on the first surface 11 is removed before the insert 33 is inserted, leaving the fixing material 34 formed inside the groove 14, It is also possible to remove it in advance. In this case, it is needless to say that the fixation of the bonding metal material and the insert 33 can be strengthened through heat treatment after inserting the insert 33. It is of course possible to first insert the fixing material 34 into the groove 14 even when ceramic powder is used and the formation of the bonding process / fixing material 34 of the bonding metal material and / or the highly reflective material 35 The order of the inserting process of the process / insert 33 may be appropriately changed (for example, the process of depositing the bonding metal material and / or the highly reflective material 35-> the inserting process of the insert 33-> (The step of forming the insulating film 34).

The material having bonding property may be composed of, for example, an alloy or paste containing at least one of low-melting metal Sn, In, Zn, and Ga having a melting point of 300 ° C or less, A powder having a low melting point metal and / or a high melting point metal and / or an organic binder may be formed into a uniform viscous mixture, followed by dispensing and heat treatment.

By inserting the fixing material 34 and / or the highly reflective material 35 into the groove 14 firstly, the size of the groove 14 can be adjusted separately from the drilling so that the size of the insert 33 in the 탆- And has the advantage of being able to impart precision in the inserting process. That is, the size of the grooves 14 can be precisely adjusted by a method such as spin coating, deposition or the like separately from drilling.

On the other hand, the rod-like insert 33 and the fixation material 34 are applied to the first substrate 10 in a mixed state, and the insert 33 is inserted into the groove 14 through the magnet, Can be surely prevented from separating from the first surface 11 and the groove 14. [ For example, after the insert 33 is inserted into the groove 14, the fixation material 34 is applied by spin coating, which causes the insert 33 to move from the first side 11 or the groove 14, which can be prevented.

Next, after the insert 33 and the fixing material 34 are inserted and fixed in the groove 14, a part of the first substrate 10 on the side of the first side 11, if necessary and preferably, Can be removed. Through this removal process, the fixing material 34 located on the first side 11 can be removed, and the heights of the insert 33 and the groove 14 can be made equal. This removal may be accomplished through polishing and a portion of the first substrate 10 may be removed to expose the insert 33.

Finally, a seed layer or nucleation layer 20 is formed on the first surface 11 of the first substrate 10, on which the insert 33 is exposed, for growth of the Group III nitride semiconductor layer. At this time, physical vapor deposition is preferably used for growing the seed layer 20. Sputtering, pulsed laser deposition (PLD), or the like can be used. The seed layer 20 may be made of a Group III nitride semiconductor such as AlN, AlGaN, GaN, ANlnN, InGaN, or AlGaInN, and may have a different composition depending on the III-nitride semiconductor light emitting device grown thereon. In the case of a group III nitride semiconductor light emitting device that emits UV-C, AlGaN or AlN having a high specific gravity of Al and having a band gap energy that does not absorb this ultraviolet ray is suitable. The seed layer 20 preferably has a thickness of less than 100 nm. In the case of having a thickness of 100 nm or more, it is difficult to secure a III-nitride semiconductor layer having a uniform composition due to a strong stress and bowing of the growth template. By forming the seed layer 20 using the physical vapor deposition method, crystal defects can be greatly reduced as compared with the seed layer grown by the MOCVD method. For example, the seed layer 20 can be formed by physical vapor deposition to form AlN or AlNO in a nitrogen (N) atmosphere containing a small amount of oxygen (O) at a temperature of 500 DEG C or less. When a small amount of oxygen is contained, crystals constituting the AlN or AlNO material layer are made smaller, so that a higher quality thin film can be formed when the III nitride semiconductor layer is formed.

A growth inhibiting film (for example, SiO ₂ (not shown)) is formed at a position where the insert 33 is positioned before or after the seed layer 20 is formed, and a group III nitride semiconductor layer is grown .

5 and 6 show an example of a III-nitride semiconductor light-emitting device according to the present disclosure and a method of manufacturing the same. The III-nitride semiconductor light-emitting device includes a template 21 for growing a Group III nitride semiconductor layer ), A first semiconductor layer 30 (for example, an n-type III nitride semiconductor layer) grown on the seed layer 20 of the template 21 and having first conductivity sequentially, and a light- A plurality of Group III nitride semiconductor layers 30 (for example, a p-type III nitride semiconductor layer) having an active layer 40 (e.g., a multiple quantum well structure) and a second semiconductor layer A first electrode 70 electrically connected to the second semiconductor layer 50 and a second electrode 80 electrically connected to the first semiconductor layer 30. The active layer 30 is made of a group III nitride semiconductor (Al (x) Ga (y) In (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? 1) , And it is possible to emit light ranging from green to ultraviolet rays by controlling the composition of these.

For the growth of the plurality of semiconductor layers 30, 40, 50, a method different from the physical vapor deposition method used for forming the seed layer 20 is used. For example, chemical vapor deposition (MOCVD), HVPE, or the like may be used. The MBE method may be used as the physical vapor deposition method. Organic chemical vapor deposition (MOCVD) is generally used for the production of commercially available Group III nitride semiconductor light emitting devices (e.g., light emitting diodes).

In the case of manufacturing a light emitting diode, the template 21 for growing a Group III nitride semiconductor layer preferably has a projection 15 for light scattering on the first surface 11 of the first substrate 10. The protrusions 15 may have various shapes such as hemispherical, triangular, square, striped, and the like. Methods for forming the protrusions 15 are disclosed in U.S. Patent No. 6,091,085, U.S. Patent No. 7,759,140, and U.S. Patent Application Publication No. 2008-0303042. In this case, the projections 15 are formed and the seed layer 20 is formed by the PVD method. Then, the template 21 is patterned by a device (for example, MOCVD Equipment) to grow a plurality of semiconductor layers 30, 40, and 50.

Next, a part of the plurality of semiconductor layers 30, 40, and 50 is etched to form an exposed surface 31 in the first semiconductor layer 30, and preferably a current diffusion electrode 60 (e.g., ITO, ZnO , Ni / Au) is formed in the second semiconductor layer 50, and then the insert 33 is exposed through additional etching. Next, the first electrode 70 is formed on the current diffusion electrode 60. Preferably the ohmic electrode 82 is located where the insert 33 is positioned for stable electrical connection to the first semiconductor layer 30 and the ohmic electrode 82 is formed by a process of forming the first electrode 70 As shown in FIG. The process of forming the exposed surface 31, the process of forming the current diffusion electrode 60, the process of exposing the insert 33, and the process of forming the first electrode 70 may be performed by a person skilled in the art Of course.

Next, the second surface 12 of the first substrate 10 is polished to expose the insert 33, thereby forming the second electrode 80. The second electrode 80 is electrically connected to the first semiconductor layer 30 through the insert 33 (via the ohmic electrode 82). The second electrode 80 has a low melting point metal (for example, In, Sn, Zn, Ga) and can be used for metal bonding.

Finally, the chips are separated into individual chips using sawing, laser scribing, and braking. In the present disclosure, a group III nitride semiconductor light-emitting device may refer to both a state prior to separation into individual chips and individual chips.

7 is a diagram showing another example of the III-nitride semiconductor light emitting device according to the present invention. In the III-nitride semiconductor light emitting device, a current (current) protection film (90; e.g., SiO _2; Current Blocking Layer) to provided, and the second electrode 80 and the template 21, the reflective film (81 in between; eg. comprises a DBR (Distributed Bragg Reflector), a second electrode ( The current blocking film 90 prevents the light absorption by the first electrode 90 from being absorbed by the first electrode 90. In this case, And the reflective film 81 functions to improve light extraction efficiency to the outside of the device.

8 shows another example of the III-nitride semiconductor light emitting device according to the present invention. In the III-nitride semiconductor light emitting device, the insert 33 is provided at a position where the first electrode 70 is located. The first electrode 70 and the current diffusion electrode 60 are insulated from the plurality of semiconductor layers 30, 40, and 50 by an insulating film 91 (e.g., SiO ₂ ). The first electrode 70 is electrically connected to the second semiconductor layer 50 through the current diffusion electrode 60. An ohmic electrode 82 is formed on the exposed surface 31 of the first semiconductor layer 30 and is electrically connected to the first semiconductor layer 30 and functions as a second electrode. The electrode 83 functioning as the second electrode in the above embodiments is the same but is electrically connected to the first electrode 70 through the insert 33 and not to the first semiconductor layer 30 And a portion of the first electrode 70 is formed as a rear electrode formed on the side of the second surface 12 of the template 21. The description of the same reference numerals will be omitted.

9 is a diagram showing another example of the III-nitride semiconductor light emitting device according to the present invention, wherein an additional groove 36 is formed in the first substrate 10, and the III- Is formed on the second side 12 side of the first substrate 10 and is connected to the first electrode 70 through an additional insert 37 And a backside electrode 83 electrically connected to the backside electrode 83. The second electrode 80 is formed on the second surface 12 side of the first substrate 10 and is electrically connected to the first semiconductor layer 30 through the insert 33. By connecting the second electrode 80 and the back electrode 83 to an external power source, it is not necessary to perform wire bonding separately. Thus, the loss of light efficiency can be reduced at the top of the device.

10 is a view showing another example of the III-nitride semiconductor light emitting device according to the present invention. The III-nitride semiconductor light emitting device includes a first electrode 70 and an insert that is not electrically connected to the second electrode 80 (38). The insert 38 does not function as an electrical passage but functions only as a heat dissipating passage.

11 shows another example of the III-nitride semiconductor light-emitting device according to the present invention. The III-nitride semiconductor light-emitting device includes a first surface 11, a second surface 12, (Not shown). The first electrode 70 and the ohmic electrode 82 are directly connected to an external power source, and the insert 33 functions as a heat dissipation path.

12 shows another example of the III-nitride semiconductor light emitting device according to the present invention. The III-nitride semiconductor light emitting device has an insert 33 of the same type as that of the insert 33 shown in FIG. 11, An insulating film 91 (for example, SiO ₂ ) is provided so that the one electrode 70 and the ohmic electrode 82 reach the same height. The first electrode 70 and the ohmic electrode 82 are connected to an external power source and flip-chip bonded instead of wire bonding. These chips are called flip chips.

FIG. 13 is a view showing another example of a method for manufacturing a III-nitride semiconductor light emitting device according to the present invention. Unlike the example shown in FIG. 4, the insert 33 is not inserted first, A plurality of semiconductor layers (30, 40, 50) are grown on the first surface (11). The seed layer 20 may be formed in the same manner as the plurality of semiconductor layers 30, 40, and 50. However, if necessary, It is also possible to form it by other methods. The protrusion 15 for light scattering can be provided on the first surface 11 and the protrusion 15 is not formed in the area 39 where the insert 33 is to be inserted so that the formation of the groove 14 The work can be facilitated.

Next, through the etching process, the exposed surface 31 is formed while exposing the area 39 where the insert 33 is to be inserted. There is no particular limitation on the order of the step of forming the exposed surface 31 and the step of exposing the area 39 in which the insert 33 is to be inserted (which may be part of the step of isolating the chip) 31) is first formed. The width of the region 39 should be larger than the size of the insert 33 and it is preferable that the semiconductor layer 30, 40, 50 be free from damage in the process of forming the trench 14.

Next, a light-transmissive or reflective current diffusion electrode 60 (e.g., ITO, ZnO, Ni / Au or Ag reflective film, Al reflective film) is formed. A passivation layer 41 (for example, SiO ₂ , TiO ₂ , SiN _x , or the like) for protecting the side surfaces and the top surfaces of the plurality of semiconductor layers 30, 40, and 50 is preferably formed before the current diffusion electrode 60 is formed. DBR). In this process, as in Fig. 7, it is needless to say that the current blocking film 90 may be formed together. That is, the current blocking film 90 and the protecting film 41 are films having the same properties as the insulating film.

Next, a protecting layer 42 is formed of the same material as the protective film 41 covering the current diffusion electrode 60, if necessary and preferably.

4, a groove 14 is formed in the region 39 and the insert 33, the fixation material 34 and the highly reflective material 35 are applied in the appropriate combination and in the proper order .

Next, the first electrode 70 and the ohmic electrode 82 are formed. The first electrode 70 and the ohmic electrode 82 can be electrically connected to the plurality of semiconductor layers 30, 40, and 50 in a necessary range in the case where the protective film 41 and the protective layer 42 are formed. The process of removing the protective film 41 and the protective film 42 is preceded.

The subsequent steps are the same as those shown in Fig. It is of course possible to fabricate the Group III nitride semiconductor device shown in Figs. It is needless to say that the method shown in FIG. 5 and the method shown in FIG. 13 can be used in combination.

Hereinafter, various embodiments according to the present disclosure will be described.

(1) A template for growing a Group III nitride semiconductor layer, comprising: a growth substrate having a first surface and a second surface opposed to the first surface, the growth substrate having grooves extending from the first surface into the growth substrate, Board; A heat dissipation insert inserted and fixed in the groove; And a nucleation layer formed on the first surface from which a portion is removed. 2. The template for growing a Group III nitride semiconductor layer according to claim 1, Wherein removal of a portion of the first surface includes removing the first surface and / or forming a groove from the first surface.

(2) A template for growth of a group III nitride semiconductor layer, wherein the heat-dissipating insert is made of a ferromagnetic metal.

(3) The template for growing a Group III nitride semiconductor layer, wherein the heat dissipation insert is in the form of a bonding wire.

(4) The heat-dissipating insert is formed by heat-treating one of a metal powder, an alloy powder, and a ceramic powder to form a group III nitride semiconductor layer.

(5) a fixing material for fixing the heat dissipation insert to the groove; and a template for growing the group III nitride semiconductor layer.

(6) A template for growth of a Group III nitride semiconductor layer, characterized by further comprising a highly reflective material located between the growth substrate and the fixation material in the groove or between the growth substrate and the heat dissipation insert in the groove.

(7) The template for growing a Group III nitride semiconductor layer, wherein the heat dissipation insert extends from the first surface to the second surface.

(8) A template for growth of a group III nitride semiconductor layer, characterized in that the heat-dissipating insert extends from the first surface to the inside of the growth substrate without reaching the second surface.

(9) The template for growth of a group III nitride semiconductor layer, wherein the seed layer is made of AlN or AlNO.

(10) A template for growth of a Group III nitride semiconductor layer, wherein a projection is formed on a first surface.

(11) A Group III nitride semiconductor light-emitting device comprising: a growth substrate having a first surface and a second surface opposite to the first surface, the growth substrate comprising a groove extending from the first surface into the growth substrate; A heat dissipation insert inserted and fixed in the groove; A nucleation layer formed on a first side from which a portion is removed; And a second semiconductor layer grown on the seed layer, the first semiconductor layer having a first conductivity, the active layer generating light through recombination of electrons and holes, and the second semiconductor layer having a second conductivity different from the first conductivity, A Group III nitride semiconductor layer; A first electrode electrically connected to the second semiconductor layer; And a second electrode electrically connected to the first semiconductor layer, wherein the second electrode is electrically connected to the first semiconductor layer.

(12) The Group III nitride semiconductor light-emitting device according to claim 1, wherein the second electrode is electrically connected to the first semiconductor layer through a heat dissipation insert.

(13) The Group III nitride semiconductor light-emitting device according to (13), wherein the second electrode is formed on the second surface side of the growth substrate.

(14) The III-nitride semiconductor light-emitting device of claim 1, further comprising an ohmic electrode provided on the exposed first semiconductor layer and electrically connected to the heat-dissipating insert.

(15) The Group III nitride semiconductor light-emitting device according to claim 1, wherein the first electrode is electrically connected to the second semiconductor layer through a heat dissipation insert.

(16) The backlight unit of claim 1, further comprising a rear electrode formed on a second surface of the growth substrate and electrically connected to the first electrode through a heat dissipation insert.

(17) An additional heat-dissipating insert having an additional groove formed in the growth substrate and inserted and fixed in an additional groove, the heat-dissipating insert being formed on the second surface side of the growth substrate, Wherein the second electrode is formed on the second surface side of the growth substrate and is electrically connected to the first semiconductor layer through a heat dissipation insert, wherein the second electrode is electrically connected to the first electrode, Nitride semiconductor light emitting device.

(18) The light emitting device of claim 1, further comprising a heat dissipation insert which is not electrically connected to the first electrode and the second electrode.

(19) A method of manufacturing a Group III nitride semiconductor light emitting device, wherein the first electrode is formed on a second semiconductor layer, the second electrode is formed on the exposed first semiconductor layer, and the Group III nitride semiconductor light emitting device is a flip chip. Semiconductor light emitting device.

(20) The III-nitride semiconductor light-emitting device according to any one of the above claims, wherein the active layer emits ultraviolet light, and the seed layer comprises Al so as not to absorb the ultraviolet light.

Further comprising a highly reflective material disposed between the growth substrate and the insert in the groove to prevent light generated in the active layer from being absorbed by the insert.

(22) The Group III nitride semiconductor light-emitting device according to any one of the preceding claims, wherein a light-scattering projection is formed on a first surface of the growth substrate.

(23) A method for fabricating a template for growing a Group III nitride semiconductor layer, the method comprising the steps of: growing a growth substrate having a first surface and a second surface opposite to the first surface, ; Inserting a heat dissipating insert in the groove; A method of fabricating a template for growing a Group III nitride semiconductor layer, the method comprising: forming a nucleation layer on a first surface of the substrate by physical vapor deposition (PVD).

(24) A method for producing a Group III nitride semiconductor light-emitting device, the method comprising the steps of: forming a groove extending from the first surface into the growth substrate in a growth substrate having a first surface and a second surface opposed to the first surface; ; Inserting a heat dissipating insert in the groove; Forming a nucleation layer on the first side through a first deposition process; A first semiconductor layer having a first conductivity, an active layer for generating light through recombination of electrons and holes, and a second conductive layer having a second conductivity different from that of the first conductive layer by successively forming a seed layer on the seed layer by a second vapor deposition method different from the first vapor deposition method. Growing a plurality of Group III nitride semiconductor layers having a first semiconductor layer and a second semiconductor layer; And electrically connecting the first electrode to the second semiconductor layer and the second electrode to the first semiconductor layer, respectively. [7] The method of manufacturing a Group III nitride semiconductor light-emitting device according to claim 1,

(25) A method of manufacturing a Group III nitride semiconductor light-emitting device, comprising: growing a plurality of Group III nitride semiconductor layers on a growth substrate having a first surface and a second surface opposite to the first surface; Removing a portion of the plurality of Group III nitride semiconductor layers and then removing a portion of the growth substrate from the first surface to form grooves extending into the growth substrate; Inserting a heat dissipating insert in the groove; And electrically connecting the plurality of Group III nitride semiconductor layers to the heat dissipation insert. The method of manufacturing a Group III nitride semiconductor light emitting device according to claim 1,

(26) The method of manufacturing a Group III nitride semiconductor light-emitting device according to any one of the preceding claims, further comprising the step of forming a light scattering projection on a first surface of the growth substrate prior to the step of growing a plurality of Group III nitride semiconductor layers Way.

(27) In the step of forming the light scattering protrusions, a light scattering protrusion is formed on the first surface except for the region where the insert is to be formed.

(28) forming a nucleation layer on the first surface by a method different from that of the plurality of Group III nitride semiconductor layers, prior to the step of growing the plurality of Group III nitride semiconductor layers Wherein the Group III nitride semiconductor light-emitting device is formed from a Group III nitride semiconductor light-emitting device.

According to the present invention, a template for growing a Group III nitride semiconductor layer, a Group III nitride semiconductor light emitting device, and a method of manufacturing the same, can improve heat dissipation in the device.

According to another aspect of the present invention, there is provided a template for growing a Group III nitride semiconductor layer, a Group III nitride semiconductor light emitting device, and a method for fabricating the same, wherein the first electrode and the second electrode can be configured in various forms, Thereby giving flexibility to the design.

A template 21, a growth substrate 10, an insert 33, a fixing material 34, a seed layer 20 for growing a Group III nitride semiconductor layer,

Claims (28)

A template for growing a Group III nitride semiconductor layer,
1. A growth substrate having a first surface and a second surface opposite to the first surface, the growth substrate comprising: a growth substrate having a groove extending from the first surface into the growth substrate;
A heat dissipation insert inserted and fixed in the groove; And,
And a nucleation layer formed on the first surface from which a part of the III-V nitride semiconductor layer is removed. The method according to claim 1,
Wherein the heat dissipation insert is made of a ferromagnetic metal. The method according to claim 1,
Wherein the heat dissipation insert is in the form of a bonding wire. The method according to claim 1,
Wherein the heat dissipation insert is formed by heat-treating one of a metal powder, an alloy powder, and a ceramic powder to form a group III nitride semiconductor layer. The method according to claim 1,
And a fixing material for fixing the heat dissipation insert to the groove. The method of claim 5,
And a highly reflective material positioned between the growth substrate and the fixing material within the groove. ≪ RTI ID = 0.0 > 11. < / RTI > The method according to claim 1,
Wherein the heat dissipation insert extends from the first surface to the second surface. The method according to claim 1,
Wherein the heat-dissipating insert extends from the first surface to the inner surface of the growth substrate without reaching the second surface. The method according to claim 1,
Wherein the seed layer is made of AlN or AlNO. The method according to any one of claims 1 to 9,
A template for growth of a Group III nitride semiconductor layer, wherein a projection is formed on a first surface. In the III-nitride semiconductor light-emitting device,
1. A growth substrate having a first surface and a second surface opposite to the first surface, the growth substrate comprising: a growth substrate having a groove extending from the first surface into the growth substrate;
A heat dissipation insert inserted and fixed in the groove;
A nucleation layer formed on a first side from which a portion is removed; And,
A first semiconductor layer grown on the seed layer, the first semiconductor layer sequentially having a first conductivity, the active layer generating light through recombination of electrons and holes, and the second semiconductor layer having a second conductivity different from the first conductivity, A nitride semiconductor layer;
A first electrode electrically connected to the second semiconductor layer; And,
And a second electrode electrically connected to the first semiconductor layer. The method of claim 11,
And the second electrode is electrically connected to the first semiconductor layer through a heat dissipation insert. The method of claim 12,
And the second electrode is formed on the second surface side of the growth substrate. 14. The method of claim 13,
And a ohmic electrode provided on the exposed first semiconductor layer and electrically connected to the heat dissipation insert. The method of claim 11,
Wherein the first electrode is electrically connected to the second semiconductor layer through a heat dissipation insert. 16. The method of claim 15,
And a back electrode formed on a second surface of the growth substrate and electrically connected to the first electrode through a heat dissipation insert. The method of claim 11,
Additional grooves are formed in the growth substrate,
And an additional heat-dissipating insert inserted and fixed in the additional groove,
And a back electrode formed on a second surface side of the growth substrate and electrically connected to the first electrode through an additional heat dissipation insert,
And the second electrode is formed on the second surface side of the growth substrate and is electrically connected to the first semiconductor layer through the heat dissipation insert. The method of claim 11,
And a heat dissipation insert which is not electrically connected to the first electrode and the second electrode. The method of claim 11,
A first electrode is formed over the second semiconductor layer,
The second electrode is formed on the exposed first semiconductor layer,
The III-nitride semiconductor light-emitting device is a flip chip. The method of claim 11,
The active layer emits ultraviolet light,
Wherein the seed layer comprises Al so as not to absorb the ultraviolet light. The method of claim 11,
And a highly reflective material disposed between the growth substrate and the heat dissipation insert in the groove to prevent light generated in the active layer from being absorbed by the insert. The method according to any one of claims 11 to 21,
And a light-scattering projection is formed on a first surface of the growth substrate. A method for fabricating a template for growing a Group III nitride semiconductor layer,
Forming a groove in the growth substrate having a first surface and a second surface opposite to the first surface, the groove extending from the first surface into the growth substrate;
Inserting a heat dissipating insert in the groove; And,
And forming a nucleation layer on a first surface of the substrate by physical vapor deposition (PVD). 2. The method of claim 1, A method for manufacturing a Group III nitride semiconductor light-emitting device,
Forming a groove in the growth substrate having a first surface and a second surface opposite to the first surface, the groove extending from the first surface into the growth substrate;
Inserting a heat dissipating insert in the groove;
Forming a nucleation layer on the first side through a first deposition process;
A first semiconductor layer having a first conductivity, an active layer for generating light through recombination of electrons and holes, and a second conductive layer having a second conductivity different from that of the first conductive layer by successively forming a seed layer on the seed layer by a second vapor deposition method different from the first vapor deposition method. Growing a plurality of Group III nitride semiconductor layers having a first semiconductor layer and a second semiconductor layer; And,
And electrically connecting the first electrode to the second semiconductor layer and the second electrode to the first semiconductor layer, respectively, to form a Group III nitride semiconductor light-emitting device. A method for manufacturing a Group III nitride semiconductor light-emitting device,
Growing a plurality of Group III nitride semiconductor layers on a growth substrate having a first surface and a second surface opposite to the first surface;
Removing a portion of the plurality of Group III nitride semiconductor layers and then removing a portion of the growth substrate from the first surface to form grooves extending into the growth substrate;
Inserting a heat dissipating insert in the groove; And,
And electrically connecting the heat dissipation insert to the plurality of Group III nitride semiconductor layers. The method of manufacturing a Group III nitride semiconductor light emitting device according to claim 1, 26. The method of claim 25,
And forming a light scattering protrusion on the first surface of the growth substrate prior to the step of growing the plurality of Group III nitride semiconductor layers. 27. The method of claim 26,
Wherein a light scattering protrusion is formed on the first surface except for a region where an insert is to be formed, in the step of forming the light scattering protrusions. 27. The method according to any one of claims 25 to 27,
Forming a nucleation layer on the first surface by a method different from a method of growing a plurality of Group III nitride semiconductor layers before the step of growing a plurality of Group III nitride semiconductor layers, Wherein the method comprises the steps of:

Images