KR20170122036A - Wire Having Etching Groove and Manufacturing Method thereof - Google Patents

Abstract

The present invention relates to a wire in which an etching groove is formed, capable of improving adhesion to rubber by forming patterns of various depths and shapes in a wire plating layer by using a plasma apparatus, and a manufacturing method thereof. The present invention relates to the wire in which an etching groove is formed, which includes: the wire; and a plating layer plated on the wire, wherein the plating layer has the etching groove with the pattern by surface-etching by the plasma apparatus, and the manufacturing method thereof which includes: a wire preparing step; a plating step of forming the plating layer by plating the wire; and a surface etching step of forming the etching groove with the pattern on the plating layer by surface-etching the wire plated through the plating step by the plasma apparatus.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire having an etched groove,

The present invention relates to a wire having an etched groove and a method of manufacturing the same. More particularly, the present invention relates to a wire having an etched groove formed in a wire plating layer to form patterns of various depths and shapes, Wire and a manufacturing method thereof.

Generally, wires are used for various purposes. Wire is used for various purposes such as saw wire, hose wire, bead wire used as a tire reinforcing material, and steel wire. These wires are plated on the surface according to the application, and then bonded to the rubber or the like. Improving the adhesive force between the wire and the rubber or the like is an important factor in terms of service life and stability of the wire.

For example, a steel wire used as a tire reinforcing material is formed by coating a brass plating having a weight ratio of Cu and Zn of 62:38 to 70:30 thinly on the surface of a steel wire to improve adhesion with rubber. However, the adhesive force between the rubber and the steel wire is deteriorated due to heat, moisture, etc. during running of the tire, which may cause breakage of the tire due to separation of the rubber and the steel wire. That is, moisture, oxygen and excessive heat are applied to the bonding interface between the rubber and the steel wire, which deteriorates the adhesion to the rubber, which has a serious effect on the life of the tire and affects the stability of the use of the tire.

In addition to the steel wire used as a tire reinforcing material, the bead wire used for the tire improves the adhesion to rubber by bronzing. In the case of the bead wire, bronze plating is used in which copper is appropriately mixed with tin in order to improve adhesion with rubber. However, the adhesive force between the bead wire and the rubber also deteriorates the adhesive strength due to external impact, heat, moisture, etc. during the running of the tire, which results in shortening the tire life.

In addition to steel wires and bead wires used as tire reinforcements, the improvement in adhesion with wires and rubber is an important factor in terms of the life and stability of the wires used for various applications. A variety of techniques have been used in the past to improve the adhesion between such wire and rubber.

Conventionally, a third alloy layer such as cobalt, nickel, molybdenum, or chromium was added to a plated layer of a binary alloy of copper and zinc to improve aging adhesion to a steel wire made of brass plated to form a ternary alloy layer. However, this method has the advantage of suppressing corrosion, but has a problem that the saccharinity is lowered in the drawing process and the adhesive force is lowered after the drawing process.

In addition, in order to improve the adhesion of the wire to the rubber or the like, an oil is applied to the surface, or various compounds such as para-nitroaniline, benzotriazole-based compound, cyclohexylamine borate compound and phenol- .

However, when the oil is applied, the unevenness of the applied oil may affect the adhesive strength, and there is a problem that the wire is corroded depending on the component of the oil. Other compounds are harmful to the human body and can cause environmental problems. Therefore, they are limited in use, may be unevenly applied to the wire, may affect the adhesive force, and adhesiveness may be deteriorated due to newly generated substances due to the compound Can occur.

U.S. Patent No. 4,226,918 (Oct. 7, 1980)

More particularly, the present invention relates to a wire having an etched groove formed in a wire plating layer by forming patterns of various depths and shapes by using a plasma apparatus to improve adhesion to rubber, ≪ / RTI >

According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; And a plating layer plated on the wire, wherein the plating layer is etched by a plasma apparatus to form an etching groove having a pattern.

According to an aspect of the present invention, there is provided a pattern of a wire having an etched groove formed in a regular pattern in which the shape of the etched groove has a constant shape and the intervals between the etched grooves are constant, It is preferable that the shape of the etching groove is one of a U shape, a V shape, and a directional wave shape.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method comprising the steps of: forming a pattern of wires having an etch groove formed thereon, the etch grooves being randomly formed, It is preferable that the depth of the groove is 0.3 탆 or more to 100 탆 or less and the plating layer is one of a brass plating layer, a bronze plating layer, a zinc plating layer, an alumma plated layer, a copper plating layer, a tin plating layer, a nickel plating layer, a chromium plating layer, a cobalt plating layer, Of a plated layer.

According to an aspect of the present invention, there is provided a method of manufacturing a wire having an etched groove, the method including: preparing a wire; A plating step of plating the wire to form a plating layer; And a surface etching step of surface-etching the plated wire formed through the plating step with a plasma apparatus to form an etching groove having a pattern in the plating layer.

According to another aspect of the present invention, there is provided a method of manufacturing a wire having an etched groove, the method comprising: forming a plasma generating device for generating plasma by using an atmospheric pressure or a vacuum; H₂, and N₂, and the plasma apparatus uses an RF power apparatus, the voltage of the RF power apparatus is in a range of 3 kV to 80 kV or less, and the amount of gas input to the plasma apparatus is 1 L / M to 500 L / M, and the depth of the etching groove is preferably set to 0.3 탆 or more and 100 탆 or less.

In order to achieve the above object, there is provided a method of manufacturing a wire having an etched groove, wherein the plating layer includes a brass plating layer, a bronze plated layer, a zinc plated layer, an alumma plated layer, a copper plated layer, a tin plated layer, a nickel plated layer, a chromium plated layer, a cobalt plated layer, And the plating layer may be formed of any one of the plating layers, and the plating step may include a drawing step of drawing the plated wire formed through the plating step.

[0001] The present invention relates to a wire having an etched groove formed in a wire plating layer by using a plasma apparatus to form patterns of various depths and shapes to improve adhesion to rubber, and a method of manufacturing the wire. In the etched groove formed by the plasma apparatus The contact area is widened and the adhesive strength to rubber is improved.

In addition, the wire having the etching groove of the present invention and the method of manufacturing the same have advantages in that the wire can be surface-treated without lowering physical properties of the wire due to heat or oxidation of the plating layer by using atmospheric pressure or vacuum plasma apparatus. The use of the inert gas harmless to the human body, Ar, H₂, and N₂, is advantageous in that it is environmentally friendly.

1 is a process diagram for a wire manufacturing method in which an etching groove of the present invention is formed.
2 is a view illustrating a wire having an etched groove according to an embodiment of the present invention.
3 is a view showing an etching groove having a regular pattern according to an embodiment of the present invention.
4 (a), 4 (b) and 4 (c) are views showing the shape of an etching groove having a regular pattern according to an embodiment of the present invention.
5 is a view showing an etching groove having an irregular pattern according to an embodiment of the present invention.
6 is a view showing the depth of an etching groove according to an embodiment of the present invention.
7 is a view illustrating a plasma apparatus according to an embodiment of the present invention.
8 is a view illustrating a process of forming an etching groove according to an embodiment of the present invention.
9A and 9B are a result table and a graph showing an adhesive force according to the depth of the etching groove according to an embodiment of the present invention.

The present invention relates to a wire having an etched groove and a method of manufacturing the same. More particularly, the present invention relates to a wire having an etched groove formed in a wire plating layer to form patterns of various depths and shapes, Wire and a manufacturing method thereof.

The wire 100 formed with the etching groove of the present invention can be used for various purposes. Bead wire, saw wire, hose wire, and the like, and may be used for various purposes as long as it can improve the adhesion with rubber. The wire 100 formed with the etching groove of the present invention can be bonded to other materials other than rubber. When bonded to a material other than rubber, an etching groove can be formed to improve the adhesion.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 and 2, a wire 100 having an etching groove according to an embodiment of the present invention includes a wire 110, a plating layer 120, and an etching groove 130, (S100), a plating step (S200), and a surface etching step (S400).

Referring to FIG. 1, the wire preparation step (S100) is a step before plating the wire 110, and may include wire pickling and coating, and a primary drawing step. Since the wire pickling and coating and the primary drawing step are known techniques, detailed description is omitted. The wire pickling and coating, the primary drawing step may be omitted if necessary, and other processing may be performed before plating.

The plating step (S200) is a step of plating the wire (110) to form a plating layer (120) on the wire (110). The plating layer 120 formed on the wire 110 may be formed of a metal such as a brass plating layer, a bronze plating layer, a zinc plating layer, an alumma plating layer, a copper plating layer, a tin plating layer, a nickel plating layer, a chromium plating layer, a cobalt plating layer, And a plating layer made of various alloys other than the brass plating layer, the bronze plating layer, the zinc plating layer, the alumma plating layer, the copper plating layer, the tin plating layer, the nickel plating layer, the chromium plating layer, the cobalt plating layer and the cadmium plating layer may be formed Of course.

Generally, in the case of a steel wire used in an automobile, the plating layer 120 may be formed of a brass plating layer. In the case of a bead wire, the plating layer 120 may be a bronze plating layer. .

The plating step (S200) may include a drawing step (S300) of drawing the plated wire formed through the plating step (S200). That is, the wire 110 may be plated to form the plated layer 120, and then the plated layer 120 may be drawn, and the drawing step S300 may be omitted if necessary.

In the surface etching step S400, the plated wire formed through the plating step S200 is surface-etched by the plasma device 140 to form an etching groove 130 having a pattern in the plating layer 120 .

The wire 110 and the plating layer 120 are formed through the wire preparing step S100, the plating step S200 and the surface etching step S400. A wire 100 having an etching groove provided with an etching groove 130 having an etching groove 130 is manufactured.

The etching groove 130 having a pattern provided in the plating layer 120 may have various shapes. Referring to FIG. 3, the pattern of the etching groove 130 may be a regular pattern. In the regular pattern, a plurality of the etching grooves 130 are formed, the etching grooves 130 have a constant shape, and the intervals between the etching grooves 130 are constant.

Referring to FIGS. 4A, 4B, and 4C, the shape of the etch groove 130 includes a triangular etch groove 131, a U-shaped etch groove 132, a directional wave etch groove 133, As shown in FIG. The directional wave-type etching groove 133 has a shape having a predetermined inclination from one end of the etching groove to the other end. The shape of the etch groove 130 is not limited to this, and may be variously shaped as long as the contact area is enlarged to improve the adhesive force.

For example, the etching groove 130 may include a spiral etching groove, a pours etching groove, a void etching groove, or the like. Here, the spiral etching groove may have a spiral shape along the wire 100, and the spiral etching groove may have a double spiral shape. The Pour-type etch groove and the Void-type etch groove are modified forms of the U-type etch groove 132. The modified shape of the U-shaped etching groove 132 may be a semicircular shape or a circular arc shape. The arc shape of a circle can be expressed in the shape of a line when the line connecting the two points is shorter than the diameter of the circle, and in the form of a circle when the diameter is longer than the diameter of the circle.

Referring to FIG. 5, the pattern of the etching groove 130 may have an irregular pattern. The irregular pattern includes a plurality of the etching grooves 130, the shape of the etching grooves 130 is randomly formed, and the intervals between the etching grooves 130 are randomly formed. That is, in the irregular pattern, the etching groove 130 is formed in the plating layer 120 without a certain rule. Since the irregular pattern does not need to consider the interval and the shape of the etching grooves 130, it is advantageous that the irregular pattern is easy to manufacture.

The etching groove 130 is not limited to this, and may be formed in various shapes. For example, the etching grooves 130 may have a predetermined shape, and the intervals between the etching grooves 130 may be randomly formed. The shape of the etching grooves 130 may be random, and the etching grooves 130 May be formed to be constant.

Referring to FIG. 6, the depth of the etch groove 130 is preferably not less than 0.3 eta m and not more than 100 eta m. 6 shows that the etching groove 130 has a non-uniform shape. However, even in the case of the constant shape of the groove 130, the depth of the etching groove 130 is preferably 0.3 탆 or more and 100 탆 or less.

The etching groove 130 is formed by the plasma apparatus 140, and the plasma apparatus 140 may form the etching groove 130 on an atomic basis. According to an embodiment of the present invention, when the plating layer 120 is a brass plating layer, Cu atoms and Zn atoms may be removed from the surface of the plating layer 120 to form the etching grooves 130. Here, the radius of the Cu atom is 0.128 eta m, and the atomic radius of Zn is 0.133 eta m. Therefore, the depth of the etch groove 130 can be formed in units of 0.3 eta m which is the minimum atomic unit.

In addition, the general thickness of the plating layer 120 is 250 m m. Therefore, if the depth of the etching groove 130 is excessively deep, the plating layer 120 may be removed to lower the adhesive force. Accordingly, it is preferable that the etch groove 130 has a thickness of 100 eta m or less.

The etching groove 130 is formed by the plasma apparatus 140 in the surface etching step S400 and the pattern of the etching groove 130 and the etching groove 130 are formed by the plasma apparatus 140. [ Can be adjusted.

The process of forming the etching groove 130 by the plasma device 140 and the plasma device 140 will be described below.

7, the plasma apparatus 140 includes a supply unit 141, a winder 142, a plasma chamber 143, a gas inlet 144, a gas outlet 145, an RF (Radio Frequency) power device 146, a rotary roller 147, and a rotary or turbo pump 148. (Wherein the rotary or turbo pump 148 is used in a vacuum plasma apparatus and may be omitted in an atmospheric pressure plasma apparatus).

A plated wire is attached to the supply stand 141 to form the etch groove 130 in the plasma apparatus 140 and then is passed through the plasma chamber 143 and wound around the take-up machine 142 to perform a continuous operation . Thereafter, gas is introduced into the plasma chamber 143 through the gas inlet 144 and a voltage is applied to the RF power device 146.

The gas introduced by the voltage applied to the RF power device 146 is converted into a plasma state, and the introduced gas is divided into free cations and free electrons. The rotating roller 147 is a device for using a plated wire as a negative electrode, and the plated wire comes into contact with the rotating roller 147 and becomes a negative electrode. When the wire plated by the rotary roller 147 becomes a negative electrode, free cations formed by the RF power device 146 are accelerated to the surface on the plated wire, The metal atoms on the surface of the wire are separated and the etching groove 130 is formed on the surface. 8A, the metal atoms of the plating layer 120 are separated and the etching groove 130 is formed in the plating layer 120. In this case,

Here, the plasma apparatus 140 may be an atmospheric plasma apparatus or a vacuum plasma apparatus. The rotary or turbo pump 148 is used in a vacuum plasma apparatus. In order to increase the efficiency of etching, the rotary or turbo pump 148 makes the air pressure in the plasma chamber 143 lower than the atmospheric pressure or in a vacuum state Plasma treatment can be performed. The configuration of the rotary or turbo pump 148 may be applied to both the wire inlet and the outlet of the plasma chamber 143 by applying the Bernoulli's law to generate a low pressure or a vacuum in the plasma chamber 143.

The shape of the etching groove 130 may be variously shaped by applying an anisotropic etching principle. For example, in the case of the plating layer 120 having the FCC lattice structure, the surface area is lower than that of the 111 surface, so that the etching speed is increased during the plasma treatment. V-shaped pattern can be formed by using this.

8A is a view showing that the etching groove 130 is formed in a brass plating layer (made of Cu and Zn), and FIG. 8B is a view showing a state in which the bronze plating layer (made of Cu and Sn) ) Are formed. Referring to FIG. 8 (a), it can be seen that the metal atoms (Cu, Zn) on the wire surface on which the brass plating layer is formed are separated from each other to form the V-type etching groove 130, The metal atoms Cu and Sn on the surface of the wire on which the bronze plating layer is formed are separated to form the U-shaped etching groove 130.

It is preferable that the voltage of the RF power device 146 is set to be not less than 3 kV and not more than 80 kV and the power supply is not less than 1 kW and not more than 4 kW in order to set the depth of the etching groove 130 to 0.3? Do. In the RF power device 146, as the voltage is increased, the accelerations of the free ions are accelerated to increase the particle energy, and accordingly, the amount of the plating particles to be detached increases. The voltage of the RF power device 146 may be set to a voltage of 3 kV or more to 80 kV or less and a supply power of 1 kW or more to 4 kW or less to control the magnitude of the voltage and the power of the RF power device 146, The depth can be set to 0.3 탆 or more and 100 탆 or less.

In addition, the depth of the etching groove 130 or the interval of the etching groove 130 can be adjusted by varying the plasma processing time by adjusting the gas input amount or the moving speed of the plated wire. In order to set the depth of the etching groove 130 to 0.3 탆 or more and 100 탆 or less, the gas supply amount is preferably 1 L / M or more to 500 L / M.

Preferably, the plasma apparatus 140 for forming the etch groove 130 uses a low temperature atmospheric pressure plasma apparatus or a vacuum plasma apparatus to prevent physical properties of the wire material and oxidation of the surface of the plating layer. A high temperature plasma apparatus generally used may cause a problem that the property of the wire due to heat is reduced or the plating layer is oxidized. However, low-temperature atmospheric-pressure plasma or vacuum plasma is different from high-temperature plasma in that a high voltage is applied between two electrodes to create a plasma state, which is highly neutral and highly reactive. If the surface is etched through this, the surface treatment can be performed without affecting the physical properties of the material due to heat.

In the present invention, an atmospheric plasma apparatus or a vacuum plasma apparatus can be selectively used. The atmospheric pressure plasma apparatus is advantageous in that it is not necessary to use a separate pump for making the atmospheric pressure in the plasma chamber 143 vacuum. Although the vacuum plasma apparatus requires separate equipment (rotary or turbo pump 148) in order to bring the pressure in the plasma chamber 143 into a vacuum state, the vacuum plasma apparatus has an advantage that the surface etching efficiency with respect to the atmospheric pressure can be increased. The pressure in the plasma chamber 143 may be used in a vacuum state when the vacuum plasma apparatus is used and the atmospheric pressure in the plasma chamber 143 may be used in a low pressure state having a pressure lower than atmospheric pressure.

The plasma generating gas used in the plasma apparatus 140 may be any one of inert gas, Ar, H 2, and N 2. The inert gas, Ar, H₂, and N₂, are harmless to the human body and have an advantage of being environmentally friendly as compared with the conventional technology of applying various compounds harmful to the human body to improve the adhesion of the wire.

Hereinafter, the present invention will be described in more detail with reference to examples. In the following embodiment, an etching groove is formed in the bronze plated bead wire. The following examples are for illustrative purposes only and are not intended to limit the invention. It is needless to say that the wire 100 having the etching groove of the present invention may be used for various purposes such as saw wire, hose wire, and steel wire used as a tire reinforcing material in addition to the bead wire.

[Example]

First, a wire having a carbon content of 0.80% and a diameter of 5.5 mm was pickled and drawn to a diameter of 1.6 mm, and the drawn wire was heat-treated at a temperature in the range of 400 to 500 ° C. Subsequently, a 15 ± 10% hydrochloric acid solution was passed through a hydrochloric acid bath maintained at a temperature of 40 ± 10 ° C. to clean the surface of the wire and immersed in a Cu-Sn plating solution composed of 90% Cu and 10% Sn for 1 second to 4 seconds, And a bronze plated layer was formed by displacement plating.

Next, the plated wires were mounted on a separate supply tray, and the surfaces were etched according to plasma treatment conditions. To adjust the etch depth to 0.2 eta m to 120 eta m, Ar and H 2 gas doses were set to 5 L / M and 1 L / M, the distance between the wire and the anode was fixed to 0.5 cm, the plasma processing time was fixed to 10 seconds, and the plasma treatment was performed while gradually increasing the supply voltage of the RF power device in the range of 10 kV to 25 kV. In addition, a general bead wire 1.6 mm product without plasma treatment was selected as a comparative example and compared.

AFM (Atomic Force Microscope) was used to measure the surface etching depth of the bead wire obtained through the above manufacturing process, and the wire surface area was measured using a Confocal Laser Microscope. The initial adhesion and aging adhesion after three months' standing were measured. The adhesive strength is indicative of adhesion to rubber.

9 (a) shows the results of the adhesion test according to the depth of the etched grooves of the bead wire, and FIG. 9 (b) shows the results thereof in a graph.

9 (a) and 9 (b), it can be seen that as the depth of the etching groove increases, the surface area of the wire increases and the adhesion increases with increasing surface area of the wire. However, it can be seen that when the etch depth is 100 탆 or more, the adhesive force decreases. This is because, as described above, if the depth of the etching groove is too deep, the plating layer is removed and the adhesive force is lowered. Therefore, the depth of the etching groove is preferably 0.3 탆 or more and 100 탆 or less.

The wire having the etching groove of the present invention and the manufacturing method thereof have the following effects.

[0001] The present invention relates to a wire having an etched groove formed in a wire plating layer by using a plasma apparatus to form patterns of various depths and shapes to improve adhesion to rubber, and a method of manufacturing the wire. In the etched groove formed by the plasma apparatus The contact area is widened and the adhesive strength to rubber is improved.

In addition, the wire having the etching groove of the present invention and the method of manufacturing the same have the merit of reducing the physical properties of the wire due to heat or surface treatment without oxidation of the plating layer by using the atmospheric pressure plasma apparatus or the vacuum plasma apparatus, The gas used in the device is advantageous in that it is environmentally friendly because it uses inert gas, which is harmless to the human body, and Ar, H₂, and N₂.

The wire having the etching groove of the present invention has the main effect of improving the adhesion force with the rubber and the like. However, it is needless to say that the additional effect is produced as the etching groove is formed. For example, in the case of a saw wire, an etching groove is formed, thereby advantageously transferring sludge generated by the saw wire.

While the present invention has been described with reference to the particular embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

S100 ... wire preparation step S200 ... plating step
S300 ... freshness step S400 ... surface etching step
100 ... a wire 110 with etched grooves 110 ... a wire
120 ... Plating layer 130 ... Etching groove
131 ... triangular etching groove 132 ... U etching groove
133 ... directional wave type etching groove 140 ... plasma device
141 ... Supply stand 142 ... Cycle
143 ... plasma chamber 144 ... gas inlet
145 ... gas outlet 146 ... RF power device
147 ... Rotary roller 148 ... Rotary or turbo pump

Claims (12)

wire; And
And a plating layer plated on the wire,
Wherein the plating layer is etched by a plasma apparatus to form an etched groove. The method according to claim 1,
Wherein the pattern of the etching groove
Wherein the etching groove has a constant shape,
Wherein the etching groove is formed in a regular pattern in which the intervals between the etching grooves are constant. The method according to claim 1,
Wherein the pattern of the etching groove
Wherein the etching groove has a constant shape,
Wherein a distance between the etching grooves is randomly formed. The method according to claim 2 or 3,
Wherein the shape of the etching groove is one of a U-shape, a V-shape, and a directional wave shape. The method according to claim 1,
Wherein the pattern of the etching groove
The shape of the etching groove is randomly formed,
Wherein the etching grooves are formed in an irregular pattern in which the intervals of the etching grooves are randomly formed. The method according to claim 1,
Wherein a depth of the etched groove is not less than 0.3 eta m and not more than 100 eta m. The method according to claim 1,
Wherein the plating layer is made of a plating layer selected from the group consisting of a brass plating layer, a bronze plating layer, a zinc plating layer, an alumma plating layer, a copper plating layer, a tin plating layer, a nickel plating layer, a chromium plating layer, a cobalt plating layer and a cadmium plating layer. Wire preparation step;
A plating step of plating the wire to form a plating layer; And
And a surface etching step of surface-etching the plated wire formed through the plating step with a plasma apparatus to form an etching groove having a pattern in the plating layer. 9. The method of claim 8,
The plasma apparatus uses an atmospheric plasma apparatus or a vacuum plasma apparatus,
Wherein the plasma generating gas used in the plasma apparatus is one of inert gas, Ar, H 2, and N 2. 9. The method of claim 8,
The plasma device uses an RF power device,
Wherein the voltage of the RF power device is in the range of 3 kV to 80 kV,
The amount of gas charged into the plasma apparatus is set to 1 L / M or more to 500 L / M,
Wherein a depth of the etching groove is set to 0.3 탆 or more and 100 탆 or less. 9. The method of claim 8,
Wherein the plating layer comprises a plating layer of any one of a brass plating layer, a bronze plating layer, a zinc plating layer, an alumma plated layer, a copper plating layer, a tin plating layer, a nickel plating layer, a chromium plating layer, a cobalt plating layer and a cadmium plating layer. Way. 9. The method of claim 8,
Wherein the plating step comprises:
And a drawing step of drawing the plated wire formed through the plating step.

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