KR20170107295A - Transistor driving module for protecting over-current - Google Patents

Transistor driving module for protecting over-current Download PDF

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Publication number
KR20170107295A
KR20170107295A KR1020160031080A KR20160031080A KR20170107295A KR 20170107295 A KR20170107295 A KR 20170107295A KR 1020160031080 A KR1020160031080 A KR 1020160031080A KR 20160031080 A KR20160031080 A KR 20160031080A KR 20170107295 A KR20170107295 A KR 20170107295A
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KR
South Korea
Prior art keywords
voltage
transistor
driving
overcurrent
output current
Prior art date
Application number
KR1020160031080A
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Korean (ko)
Inventor
김광운
Original Assignee
엘에스산전 주식회사
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Filing date
Publication date
Application filed by 엘에스산전 주식회사 filed Critical 엘에스산전 주식회사
Priority to KR1020160031080A priority Critical patent/KR20170107295A/en
Publication of KR20170107295A publication Critical patent/KR20170107295A/en

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/1213—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
    • G01R19/16571—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

The transistor driving module for preventing overcurrent according to an exemplary embodiment of the present invention includes a power supply unit for outputting an output current to be applied to the transistor, a driving circuit for applying the output current to a gate terminal of the transistor to turn on the transistor, Wherein the driving circuit controls the output current to turn off the transistor if the output current is determined to be an overcurrent as a result of the determination by the determination unit .

Description

[0001] The present invention relates to a transistor driving module for protecting over current,

The present invention relates to a transistor drive module for preventing an overcurrent, and more particularly, to a transistor drive module for preventing an overcurrent by cutting off an overcurrent applied to a transistor by determining whether an overcurrent occurs in an output terminal of a power supply section and controlling a drive circuit based on the determination result .

Power semiconductors are key semiconductor devices for power conversion that convert DC or AC voltage and current to the appropriate form and size required by the system. These power semiconductors are used in many industrial fields such as IT, telecommunication, and automobile, and are essential in designing integrated circuits.

Industries that require precise operation of power semiconductors require power semiconductors with high operating speeds and low power losses. Conventional transistors are disadvantageous in that the circuit configuration is complicated and the operation speed is slow, instead of being cheap, and the MOSFET (Metal Oxide Silicon Field Effect Transistor) is disadvantageous in that it is low in power and high in operation speed but expensive. Therefore, Insulated Gate Bipolar Transistor (IGBT) is fabricated by combining the advantages of MOSFETs with high operating speed and the advantages of transistors that can be manufactured at low cost and high current at low cost.

In order to drive a power semiconductor such as an IGBT, a drive circuit and a power supply device corresponding to the device specification must be designed. The driving circuit is a circuit for driving the power semiconductor, and mainly uses a totem-pole circuit. On the other hand, the power supply device is a device for supplying power to a driving circuit, and mainly uses a switched mode power supply (SMPS).

The totem pole circuit is a circuit that is connected directly to the load by omitting the output transformer. It is effective in reducing the loss of power to the power semiconductor and amplifying the current. It also has the advantage of low impedance and low noise effects.

On the other hand, SMPS is a power supply device that converts AC power supplied from a commercial power source to match the characteristics of a power semiconductor, and controls a driving circuit at a high frequency and provides a stable DC voltage. In the case of an integrated circuit including SMPS, an effective power supply can be provided when operating as an insulated type in order to prevent damage to the device and noise between the devices, and a representative example thereof is a flyback-converter.

The flyback converter is composed of a primary side power source to which power is input and a secondary side power source that supplies power to the driving circuit through a transformer. These flyback converters are mainly used in low-capacity SMPS because of the low number of parts required for power supply and low cost.

However, in the conventional flyback converter, since the primary side power source determines whether the output current from the secondary side power source is overcurrent, there is a problem such as a measurement delay, and the instantaneous overcurrent of the driving circuit can not be prevented. In addition, in the conventional flyback converter, when the overcurrent occurs in the totem pole circuit, which is a driving circuit, the operation of the driving circuit can not be immediately stopped, so that damage of transistors and power semiconductors in the totem pole circuit can not be prevented.

An object of the present invention is to provide an overcurrent prevention transistor drive module capable of preventing a measurement delay by determining whether an output current at an output terminal of the power source portion is an overcurrent.

An object of the present invention is to provide a transistor driving circuit capable of preventing damage to elements in a driving circuit by controlling a driving circuit based on an output voltage according to a determination result of an overcurrent state.

An object of the present invention is to provide an overcurrent prevention transistor drive module capable of preventing the transistor from being damaged by stopping the operation of the drive circuit immediately when the output current is determined to be an overcurrent.

The objects of the present invention are not limited to the above-mentioned objects, and other objects and advantages of the present invention which are not mentioned can be understood by the following description and more clearly understood by the embodiments of the present invention. It will also be readily apparent that the objects and advantages of the invention may be realized and attained by means of the instrumentalities and combinations particularly pointed out in the appended claims.

According to an aspect of the present invention, there is provided an overcurrent prevention transistor drive module for preventing an overcurrent, the overcurrent protection transistor drive module comprising: a power source for outputting an output current to be applied to the transistor; And a determination unit coupled to an output terminal of the power supply unit and determining whether the output current is an overcurrent, wherein the driving circuit determines that the output And controls the output current to turn off the transistor if the current is determined to be an overcurrent.

According to the present invention as described above, it is possible to prevent the measurement delay by determining whether the output current at the output terminal of the power supply unit is an overcurrent.

In addition, according to the present invention, there is an effect that device damage in the drive circuit can be prevented by controlling the drive circuit based on the output voltage according to the determination result of the overcurrent state.

In addition, according to the present invention, when the output current is determined to be an overcurrent, the operation of the driving circuit is immediately stopped, thereby preventing damage to the transistor.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a transistor driving module for preventing overcurrent according to an embodiment of the present invention connected to a transistor. FIG.
2 is a circuit diagram of a power supply unit according to an embodiment of the present invention;
3 illustrates a determination unit according to an embodiment of the present invention.
4 is a graph comparing a voltage of a measuring unit with a reference voltage according to an embodiment of the present invention and a result of the determination.
5 is a view schematically showing a state in which a first driving unit according to an embodiment of the present invention outputs an output voltage to a second driving unit based on a determination result of a determination unit.
6 illustrates a circuit in which a second driver according to an embodiment of the present invention applies an output current to a gate terminal of a transistor.

The above and other objects, features, and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings, which are not intended to limit the scope of the present invention. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to denote the same or similar elements.

FIG. 1 is a schematic view illustrating a transistor driving module 100 for preventing overcurrent according to an embodiment of the present invention connected to a transistor 10. Referring to FIG. 1, an overcurrent prevention transistor driving module 100 according to an exemplary embodiment of the present invention may include a power supply unit 110, a determination unit 120, and a driving circuit 130. Referring to FIG. The overcurrent prevention transistor drive module 100 shown in FIG. 1 is in accordance with one embodiment, and the components thereof are not limited to the embodiment shown in FIG. 1, and some components may be added, .

2 is a circuit diagram of a power supply unit 110 according to an embodiment of the present invention. Hereinafter, the power supply unit 110 will be described in detail with reference to FIGS. 1 and 2. FIG.

The power supply unit 110 according to an embodiment of the present invention can output the output current Ig applied to the transistor 10. [ The power supply unit 110 includes a power input unit 111 for applying a first voltage VO1, a transformer 112 for applying a first voltage VO1 and converting a first voltage VO1 to a second voltage Vo2, And a switch 113 for controlling the first voltage Vo1 applied to the transforming unit 112. [ Here, the power input unit 111 may apply the first voltage Vo1 when the switch 113 is turned on and may not apply the first voltage Vo1 when the switch 113 is turned off.

The first voltage Vo1 may be a DC voltage having a constant magnitude and may be a DC voltage converted from an AC voltage for outputting a DC voltage to be input to the transistor 10. The switch 113 is a device that is turned on or off by a control signal and includes a semiconductor device such as a gate turn-off thyristor (GTO), a bipolar junction transistor (BJT), or a metal oxide silicon field effect transistor .

In one embodiment, the transformer 112 includes a first coil L1 to which a first voltage Vo1 is applied, a second coil L2 that converts a first voltage Vo1 to a second voltage Vo2, And a diode D1 connected to the second coil L2 to make the direction of the output current Ig constant.

The first coil L1 and the second coil L2 are insulated and the black point of each coil may be opposite. Here, as a characteristic of the coil, the black point may be a Dot convention for identifying the polarity of the voltage applied to each coil. On the other hand, the diode D1 may include a semiconductor element having a property of causing current to flow only in one direction and not flowing in the opposite direction.

2, the power supply unit 110 includes a power input unit 111 for applying a first voltage Vo1 which is a DC voltage, a first coil L1 to which a first voltage Vo1 is applied, And a second coil L2 for converting the second voltage Vo2 into a second voltage Vo2. The power supply unit 110 may include a flyback converter including a MOSFET switch 113 connected to the power input unit 111 and a diode D1 connected to the transformer unit 112.

When the switch 113 is turned on according to an embodiment of the present invention, the power input unit 111 applies the first voltage Vo1 to the first coil L1 and the second voltage Vo1 is opposite to the first voltage Vo1 The second voltage Vo2 of polarity can be induced. At this time, since the diode D1 blocks the current flowing through the secondary coil, energy due to the voltage can be accumulated in the primary coil.

On the other hand, when the switch 113 is turned off, a counter electromotive force is generated in the primary coil, so that the second voltage Vo2 in the opposite direction to the previous direction can be induced in the secondary coil. At this time, the diode D1 can cause current to flow through the secondary coil to discharge the energy stored in the primary coil to the secondary coil. In this way, the switch 113 can be supplied with the second voltage Vo2 to the driving circuit 130 while repeating the turn-on and turn-off.

The circuit of the power source output terminal 114 in which the voltage is induced by the primary coil L1 among the configurations of the power source unit 110 may be configured to overlap with one or more.

FIG. 3 is a diagram illustrating a determination unit 120 according to an embodiment of the present invention. FIG. 4 is a graph comparing a voltage Vo of a measurement unit with a reference voltage Vref according to an exemplary embodiment of the present invention, (V1). Hereinafter, the determination unit 120 will be described in detail with reference to FIGS. 1, 3, and 4. FIG.

The determination unit 120 according to an embodiment of the present invention may be connected to the output terminal 114 of the power supply unit 110 and may determine whether the output current Ig is an overcurrent. The determination unit 120 determines whether the output current Ig is an overcurrent or not by comparing the voltage Vo of the measurement unit with the reference voltage Vref, And a comparison unit 122 that compares the comparison results.

More specifically, the comparing unit 122 measures the voltage Vo of the measuring unit and compares the voltage Vo of the measuring unit with a preset reference voltage Vref so that the voltage Vo of the measuring unit is set to a preset reference voltage Vref The output current Ig can be determined as an overcurrent.

Referring to FIG. 3, the measuring unit 121 can determine a current value of an actual output current Ig using a current sensor. On the other hand, the measuring unit 121 may include a resistor as a means for providing a measuring voltage to the comparing unit 122, and more specifically, may include a shunt resistor used for current measurement.

Referring again to FIG. 3, the comparator 122 may be configured using an operational amplifier (OP-AMP). More specifically, the comparing unit 122 applies a predetermined reference voltage Vref to the non-inverting input of the operational amplifier and applies the voltage Vo of the measuring unit to the inverting input to compare the voltage Vo of the measuring unit with a predetermined reference voltage Vref) can be compared. The comparison unit 122 may determine the output current Ig as an overcurrent and output the determination result V1 when the voltage Vo of the measurement unit exceeds the preset reference voltage Vref. Meanwhile, the determination result (V1) may be output as a voltage value.

4, the comparison unit 122 measures the voltage Vo of the measurement unit and determines the determination result V1 as 0 [V] in a period in which the voltage Vo of the measurement unit exceeds the preset reference voltage Vref, And output the determination result V1 as 1 [V] in the remaining period. The voltage value according to the preset reference voltage Vref and the determination result V1 may be set according to the design requirement.

5 is a view schematically showing a state in which the first driving unit 131 outputs the output voltage to the second driving unit based on the determination result V1 of the determination unit 120 according to an embodiment of the present invention. 6 is a circuit diagram illustrating a circuit in which a second driver according to an embodiment of the present invention applies an output current to a gate terminal of a transistor. Hereinafter, the driving circuit 130 will be described in detail with reference to Figs. 1, 5, and 6. Fig.

The driving circuit 130 according to an embodiment of the present invention can apply the output current Ig to the gate terminal of the transistor 10 to turn the transistor 10 on. The driving circuit 130 may turn off the transistor 10 by controlling the output current Ig when the output current Ig of the determination unit 120 is determined to be an overcurrent. On the other hand, the transistor 10 is a semiconductor element which plays a role of regulating or amplifying a current or voltage and a switch, and may include an insulated gate bipolar transistor (IGBT), a BJT and a MOSFET.

The driving circuit 130 includes a first driving unit 131 that outputs an output voltage based on the determination result V1 of the determination unit 120 and a second driving unit 132 that controls the output current Ig based on the output voltage ). Referring to FIG. 5, the first driving unit 131 may receive the voltage value as the determination result (V1) of the determination unit 120 and may control the second driving unit 132. At this time, the output voltage may include a driving voltage and a non-driving voltage.

More specifically, the first driving unit 131 outputs a driving voltage when the determination result V1 is that the output current Ig is not an overcurrent. When the determination result V1 is an overcurrent, The driving voltage can be outputted.

At this time, the second driving unit 132 is driven to receive the driving voltage and can apply the output current Ig to the gate terminal of the transistor 10. On the other hand, when the second driving unit 132 receives the non-driving voltage, the second driving unit 132 may not be driven. Meanwhile, the first driving unit 131 and the second driving unit 132 may be supplied with power Vcc, which is the voltage of the output terminal 114 of the power supply unit.

The second driver 132 according to an embodiment of the present invention includes a first driving transistor 133 turned on when the output voltage is a driving voltage and a second driving transistor 134 turned off when the output voltage is a driving voltage. . ≪ / RTI > The driving transistor 133 may include a first driving transistor 133 that is turned off when the output voltage is a non-driving voltage and a second driving transistor 134 that is turned on when the output voltage is a non-driving voltage.

Referring to FIG. 6, the second driving unit 132 may include a totem-pole circuit. More specifically, as the output voltage, the driving voltage may have a positive value and the PNP transistor may be included as the first driving transistor 133 turned on and the NPN transistor and the second driving transistor 134 turned off . On the other hand, as the output voltage, the non-driving voltage may have a negative value, and the PNP transistor may be included as the first driving transistor 133 turned off at this time as the NPN transistor and the second driving transistor 134 turned on .

As described above, when the driving voltage is applied as the output voltage, the second driving unit 132 may apply the output current Ig to the gate terminal of the transistor 10 to turn the transistor 10 on. On the other hand, when a non-driving voltage is applied as an output voltage, the output current Ig is cut off and the transistor 10 can be turned off. Since the second driving unit 132 has the above configuration, the output impedance is low, and the influence on the waveform distortion and noise can be reduced.

According to the present invention as described above, measurement delay can be prevented by determining whether the output current Ig at the output terminal 114 of the power supply unit 110 is an overcurrent. According to the present invention, there is an effect that device damage in the driving circuit 130 can be prevented by controlling the driving circuit 130 based on the output voltage according to the over-current determination result (V1). In addition, according to the present invention, when the output current Ig is determined to be an overcurrent, the operation of the driving circuit 130 is immediately stopped, thereby preventing the transistor 10 from being damaged.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, But the present invention is not limited thereto.

Claims (8)

An overcurrent prevention transistor drive module for preventing an overcurrent,
A power supply unit for outputting an output current applied to the transistor;
A driving circuit for applying the output current to a gate terminal of the transistor to turn on the transistor; And
And a determination unit coupled to an output terminal of the power unit and determining whether the output current is an overcurrent,
If it is determined that the output current is an overcurrent, the driving circuit controls the output current to turn off the transistor
Transistor drive module for overcurrent prevention.
The method according to claim 1,
The determination unit
A measuring unit measuring the magnitude of the output current; And
And a comparator for measuring the voltage of the measuring unit and comparing the voltage of the measuring unit with a preset reference voltage and determining the output current as an overcurrent when the voltage of the measuring unit exceeds the preset reference voltage
Transistor drive module for overcurrent prevention.
The method according to claim 1,
The drive circuit
A first driver for outputting an output voltage based on the determination result; And
And a second driver for controlling the output current based on the output voltage
Transistor drive module for overcurrent prevention.
The method of claim 3,
Wherein the output voltage includes a driving voltage and a non-driving voltage,
The first driving unit outputs the driving voltage when it is determined that the output current is not an overcurrent, and outputs the driving voltage when the output current is determined to be an overcurrent
Transistor drive module for overcurrent prevention.
5. The method of claim 4,
The second driver
A first driving transistor that is turned on when the output voltage is the driving voltage; And
And a second driving transistor which is turned off when the output voltage is the driving voltage
Transistor drive module for overcurrent prevention.
5. The method of claim 4,
The second driver
A first driving transistor which is turned off when the output voltage is the non-driving voltage; And
And a second driving transistor which is turned on when the output voltage is the non-driving voltage
Transistor drive module for overcurrent prevention.
The method according to claim 1,
The power supply unit
A power input unit for applying a first voltage;
A transformer for applying the first voltage and converting the first voltage to a second voltage; And
And a switch for controlling the first voltage applied to the transforming unit,
The power input unit applies the first voltage when the switch is turned on
Transistor drive module for overcurrent prevention.
8. The method of claim 7,
The transformer
A first coil to which the first voltage is applied;
A second coil converting the first voltage to the second voltage; And
And a diode connected to the second coil for making the direction of the output current constant
Transistor drive module for overcurrent prevention.
KR1020160031080A 2016-03-15 2016-03-15 Transistor driving module for protecting over-current KR20170107295A (en)

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Application Number Priority Date Filing Date Title
KR1020160031080A KR20170107295A (en) 2016-03-15 2016-03-15 Transistor driving module for protecting over-current

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111562429A (en) * 2020-05-29 2020-08-21 广东浪潮大数据研究有限公司 Current detection circuit and system of power supply

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111562429A (en) * 2020-05-29 2020-08-21 广东浪潮大数据研究有限公司 Current detection circuit and system of power supply

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