KR20170092728A - Apparatus for Eliminating Common External B field Interference - Google Patents

Apparatus for Eliminating Common External B field Interference Download PDF

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KR20170092728A
KR20170092728A KR1020160013232A KR20160013232A KR20170092728A KR 20170092728 A KR20170092728 A KR 20170092728A KR 1020160013232 A KR1020160013232 A KR 1020160013232A KR 20160013232 A KR20160013232 A KR 20160013232A KR 20170092728 A KR20170092728 A KR 20170092728A
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pole
magnet
sensing device
magnetic
sensing
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KR1020160013232A
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KR101823571B1 (en
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임춘택
조규형
박상휘
이상한
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한국과학기술원
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0047—Housings or packaging of magnetic sensors ; Holders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00—Insulated conductors or cables characterised by their form
    • H01B7/02—Disposition of insulation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

Disclosed is a sensing device for effectively eliminating common external B field interference. An embodiment of the present invention provides the sensing device capable of not only eliminating the common external B field interference by a magnet structure applying a differential sensing method when sensing a magnetic field between a magnet and a magnetic body but also increasing a sensing gain. The sensing device according to the present invention includes a magnetic part which is divided into an S-pole and an N-pole, and a hall sensor which measures a gap to remove the common external B field interference between a target and the magnetic part.

Description

[0001] Apparatus for Eliminating Common External B field Interference [

This embodiment relates to a sensing device that effectively removes the disturbing magnetic field of an external common component.

The contents described below merely provide background information related to the present embodiment and do not constitute the prior art.

Hall sensors are used in many technical fields. For example, hall sensors are used in the field of accurately sensing the distance of a stationary or moving object. The measurement signal of the Hall sensor described above depends on the magnetic field. Hence, Hall sensors are generally sensitive to the coercive field, which may be caused by, for example, a guide line or magnet on the periphery of the Hall sensor.

Thus, in a typical Hall sensor, each measured value distorted by an interference magnetic field can be caused.

In this embodiment, when sensing a magnetic field between a magnet and a magnetic body, a common external B field interference can be eliminated due to a magnet structure that can be applied to differential sensing, And an object of the present invention is to provide a sensing device capable of increasing a sensing gain.

According to an aspect of this embodiment, A magnet unit that is divided into an N pole and an S pole, the upper surface of the N pole and the S pole being coupled to each other at a position symmetrical to the lower surface of the support unit; And magnetic field intensities corresponding to the distances between the magnet and the magnetic targets are respectively measured by a differential sensing method and are respectively measured on the lower surfaces of the N poles and the S poles at positions symmetrical to each other And a hall sensor for measuring a gap obtained by removing a common external field field interference of an external common component between the magnet portion and the target using the difference value of the magnetic field intensity As shown in FIG.

As described above, according to the present embodiment, when sensing a magnetic field between a magnet and a magnetic body, a common external disturbing magnetic field can be removed due to a magnet structure capable of applying a differential sensing method, There is an effect that can be.

According to this embodiment, not only can residual magnetization be eliminated due to a magnet structure capable of applying a differential sensing method, but also shields the periphery of the magnet structure with a magnetic substance, thereby reducing the influence of the external disturbing magnetic field There is an effect that can be made.

According to the present embodiment, when a gap between a moving target and a target is sensed using a Hall sensor coupled to a magnet structure capable of applying a differential sensing method, the influence of residual magnetization or magnetic hysteresis It is possible to obtain a higher accuracy.

The sensing device according to the present embodiment can be applied to a field for precisely sensing a distance of a stationary or moving object (for example, ultra-precise gap sensing sensing in units of um).

1A to 1D are views for explaining the principle of a Hall Effect Gap Sensor according to the present embodiment.
2A to 2C are views for explaining a first structure of a magnet for differential sensing according to the present embodiment.
3A to 3C are views for explaining a second structure of a magnet for differential sensing according to the present embodiment.
4A to 4C are views for explaining magnet shielding according to the present embodiment.

Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings.

The sensing device 200 according to the present embodiment can detect a magnetic field between the magnet 120 and the target 110 made of a magnetic material by using a differential sensing method, Common External B field Interference) and removes Residual Magnetization. The 'differential sensing' described in this embodiment means a method of measuring a magnetic field size difference appearing at the magnet anode (N pole, S pole).

The sensing device 200 according to the present embodiment eliminates the common external disturbing magnetic field and doubles the sensing gain due to the magnet structure applicable to the differential sensing method. In addition, the sensing device 200 according to the present embodiment reduces the influence of the external disturbing magnetic field by shielding the periphery of the magnet structure that can apply the differential sensing method with a magnetic material.

The magnet structure that can be applied to the differential sensing method is a 'C' magnetic structure (first structure) or a 'Z' magnetic structure (in this embodiment, a 'Z' .

The sensing device 200 according to the present embodiment can not only eliminate a common external disturbing magnetic field due to a 'C' magnetic structure (first structure) or a 'Z' magnetic structure (second structure) .

The sensing device 200 according to the present embodiment includes a Hall sensor 130 coupled to a 'C' magnetic structure (first structure) or a 'Z' magnetic structure (second structure) Even when an external Varying Interference B field exists, the external changing interfering magnetic field is applied in common, so that the influence Can be removed. The Hall sensor 130 refers to Hall Effect Gap Sensor.

The sensing device 200 according to the present embodiment is a sensing device for sensing a magnetic field between a magnet 120 and a target 110 made of a magnetic material due to a 'C' magnetic structure (first structure) or a 'Z' The sensor output component for the gap h is amplified and the sensing gain is improved substantially.

The sensing device 200 according to the present embodiment may include a moving target 110 using a Hall sensor 130 coupled to a 'C' magnetic structure (first structure) or a 'Z' magnetic structure (second structure) , It is possible to reduce the influence of the residual magnetization or the magnetic hysteresis phenomenon to obtain higher accuracy.

The sensing device 200 according to the present embodiment may be constructed so that the shielding film 400 having a magnetic body covers the 'C' magnetic structure (first structure) or the 'Z' magnetic structure (second structure) The effect can be further reduced. The sensing device 200 according to the present embodiment can be applied to a field for precisely sensing the distance of a stationary or moving object (for example, ultra-precise air gap sensing in units of um).

FIGS. 1A to 1D are views for explaining the principle of the Hall sensor 130 applied to the sensing device 200 according to the present embodiment. Hall sensor 130 refers to Hall effect pore sensors.

1A, a Hall effect applied to the Hall sensor 130 is a function of applying a magnetic flux (B) (Magnetic Flux Density) to a conductor through which a current I flows, And a voltage V is generated by applying a force in a direction orthogonal to the direction.

The intensity of the magnetic field between the magnet 120 and the target 110 made of a magnetic material changes according to the distance between the magnet 120 and the target 110, that is, the gap h .

The Hall sensor 130 measures a gap h between the magnet 120 and the target 110 using the intensity of the magnetic field that varies with the distance between the magnet 120 and the target 110 do. In other words, when the Hall sensor 130 is positioned between the magnet 120 and the target 110, the strength of the magnetic field varies according to the distance between the magnet 120 and the target 110, And the 'gap h' between the target 110 and the target 110 can be measured.

As shown in FIG. 1C, in an environment such as a magnetic levitation, a magnetic field (Varying External Interference B Field) exists in the environment in addition to a magnetic field generated by the magnet 120. The changing magnetic field for magnetic levitation hinders the Hall sensor 130 from measuring the correct gap h (Gap Sensing).

1D, when the target 110 made of a magnetic material moves in the horizontal direction, 'residual magnetization' generated by the magnet 120 exists in the target 110 made of a magnetic material 'Self-history' phenomenon occurs. This 'magnetic hysteresis' phenomenon may cause an error in the Hall sensor 130 to measure the correct gap h between the magnet 120 and the target 110. In other words, the Hall sensor 130 must measure the intensity of the same magnetic field at any horizontal position of the position of the target 110, because the 'magnetic hysteresis' It is impossible to accurately measure the air gap h between the electrodes 110.

2A to 2C show a first structure of a magnet for measuring the difference in magnetic field magnitude between the N poles 222 and S poles 224 of the magnet 120 according to the present embodiment in a differential sensing manner Fig.

2A to 2C, a 'C' magnetic structure (first structure) of a magnet structure to which a differential sensing method can be applied will be described. The 'C' magnet structure (first structure) means that the overall shape of the support part 210 and the magnet part 120 has a 'C' shape.

Hereinafter, a sensing device 200 having a 'C' magnetic structure (first structure) will be described. The sensing device 200 having a 'C' magnet structure (first structure) includes a supporting portion 210, a magnet portion 120, a Hall sensor 130, and a shielding film 400. The components included in the sensing device 200 are not limited thereto.

The supporting part 210 means a member designed in a structure for supporting internal modules of the sensing device 200 according to the present embodiment. The support 210 may be implemented in various shapes suitable for 'device', 'application' or 'environment' to which the sensing device 200 is applied. For example, the supporting part 210 may be formed in a rectangular plate shape, a circular shape, a rhombic shape, or a trapezoid shape. However, in the present embodiment, .

The upper surface of the magnet portion 120 is coupled to one side of the lower surface of the support portion 210. The magnet portion 120 is divided into an N pole 222 and an S pole 224, respectively. The upper surfaces of the N poles 222 and the S poles 224 are coupled to the lower surface of the supporter 210 at symmetrical positions.

Hereinafter, the 'C' magnetic structure (first structure) will be described in detail.

The N pole 222 and the S pole 224 are disposed so as to extend along both side surfaces of the lower surface of the support portion 210. The N pole 222 and the S pole 224 may also be implemented in various shapes suitable for 'device', 'application', or 'environment' to which the sensing device 200 is applied. However, And the S pole 222 and the S pole 224 are formed in a rod shape. The lengths of the N poles 222 and the S poles 224 are extended equally to the side length of the support 210 so that the overall shape of the support 210 and the magnet 120 has a " .

Hall sensor 130 refers to Hall effect pore sensors. The Hall sensors 130 are disposed on the lower surfaces of the N and S poles, respectively. The hall sensor 130 measures the magnetic field intensity according to the distance between the magnet unit 120 and the target 110 made of a magnetic material by a differential sensing method. The hall sensor 130 detects a gap h (k) between the magnet unit 120 and the target 110, which eliminates a common external B field interference of an external common component between the magnet unit 120 and the target 110, ). The hall sensor 130 measures the magnetic field intensity according to the distance between the magnet unit 120 and the target 110, and then removes the disturbing magnetic field of the external common component and increases the sensing gain with a difference value of the magnetic field intensity. The hall sensor 130 is disposed at the center of the lower surface of the N pole 222 and the S pole 224, respectively.

2A and 2B show a 'first structure' of the magnet unit 120 for differential sensing.

The magnet portion 120 is composed of an N pole 222 and an S pole 224. The length of the N pole 222 and the S pole 224 is equal to the side length of the support portion so that the overall shape of the support portion 210 and the magnet portion 120 is a 'horseshoe' or 'U' shape . The hall sensor 130 is attached to both poles of the N pole 222 and the S pole 224 to perform differential sensing for extracting a magnetic field value.

When the Hall sensor 130 uses a differential sensing method, an external magnetic field (External B Field) affects both Hall sensors with the same directionality (common component). On the other hand, the change of the magnetic field along the gap h on the magnet 120 and the target 110 is doubled when the difference is taken. For example, if there is a positive change according to the output of the hall sensor 130 attached to the N pole 222 side, a negative change occurs according to the output of the Hall sensor 130 attached to the S pole 224 do.

Therefore, the sensing device 200 according to the present embodiment removes the common disturbance magnetic field, and the sensing gain increases.

FIG. 2C is a view for explaining the magnet structure and the principle of gap sensing for differential sensing in the sensing device 200 according to the present embodiment. The principle of the Hall sensor 130 attached to the 'C' magnet structure (first structure) is as shown in FIG. 2C.

It can be confirmed that the intensity of the magnetic field and the gap h are inversely proportional to each other using Equations (1) and (2).

Figure pat00001

Gap R: air gap reluctance, R: a magnetoresistive, h: air gap (Gap), A: cross sectional area (Cross Section Area), μ r : relative permeability (Relative Permeability), μ 0: transmission constant (Permeability Constant)

Figure pat00002

Φ: a magnetic field (B) (Magnetic Flux Density) , R Target: magnetic material reluctance, R Magnet: Magnetic reluctance, R gap: air gap reluctance, V f: a voltage, sensed at the Hall sensor R: reluctance, h: A: Cross Section Area, μ r : Relative Permeability, μ 0 : Permeability Constant,

3A to 3C are views for explaining a 'second structure' of a magnet for measuring a magnetic field size difference appearing on a magnet anode according to the present embodiment.

3A to 3C, a Z-shaped magnet structure (second structure) of a magnet structure to which a differential sensing method can be applied will be described.

In the 'Z' magnet structure (the second structure), a pair of N poles 222 are arranged at two corners so that the upper surface of the magnet portion 120 is opposed to each other in the diagonal direction of the support portion 210, And a pair of S poles 224 are arranged on the S-pole. In other words, the 'Z' magnet structure (second structure) is a magnet structure to which a differential sensing method can be applied. In the present embodiment, the 'Z' magnet structure will be described for convenience of explanation. The sensing device 200 according to the present embodiment not only can eliminate the common external disturbing magnetic field due to the 'Z' magnet structure (second structure), but also increases the sensing gain.

Hereinafter, a sensing device 200 having a 'Z' magnetic structure (second structure) will be described.

The sensing device 200 having a Z-shaped magnet structure (second structure) includes a supporting portion 210, a magnet portion 120, a Hall sensor 130, and a shielding film 400. The components included in the sensing device 200 are not limited thereto.

The supporting part 210 means a member designed in a structure for supporting internal modules of the sensing device 200 according to the present embodiment. The support 210 may be implemented in various shapes suitable for 'device', 'application' or 'environment' to which the sensing device 200 is applied. For example, in the present embodiment, it is assumed that the support portion 210 is implemented as a rectangular plate shape, and the support portion 210 may be formed in a rectangular plate shape, a circular shape, a rhombic shape, or a trapezoid shape. .

The upper surface of the magnet portion 120 is coupled to one side of the lower surface of the support portion 210. The magnet portion 120 is divided into an N pole 222 and an S pole 224, respectively. The upper surfaces of the N poles 222 and the S poles 224 are coupled to the lower surface of the supporter 210 at symmetrical positions.

Hereinafter, the Z-shaped magnet structure (second structure) will be described in detail.

The magnet portion 120 includes an array of magnets of an N pole 222 and an S pole 224 whose upper surfaces are coupled to respective corners of the support portion 210. The magnet array of the N poles 222 includes a pair of N poles 222 provided at two corners so as to face each other in the diagonal direction of the support portion 210. The magnet array of S-poles 224 includes a pair of S-poles 224 located at two corners remaining opposite to each other in the diagonal direction of the support 210. In the present embodiment, for convenience of explanation, it is assumed that the N pole 222 and the S pole 224 are formed into a rod shape. The N poles 222 and the S poles 224 are arranged to have predetermined distances along the sides of the supports 210.

Hall sensor 130 refers to Hall effect pore sensors. The Hall sensors 130 are disposed on the lower surfaces of the N and S poles, respectively. The hall sensor 130 measures the magnetic field intensity according to the distance between the magnet unit 120 and the target 110 made of a magnetic material by a differential sensing method. The Hall sensor 130 measures a gap obtained by removing an interference magnetic field of an external common component between the magnet unit 120 and the target 110 by using the difference value of the magnetic field intensity measured by the differential sensing method. The hall sensor 130 measures the magnetic field intensity according to the distance between the magnet unit 120 and the target 110, and then removes the disturbing magnetic field of the external common component and increases the sensing gain with a difference value of the magnetic field intensity. The hall sensor 130 is disposed at the center of the lower surface of the N pole 222 and the S pole 224, respectively.

3A and 3B, when the overall shape of the support portion 210 and the magnet portion 120 has a Z-shaped structure (second structure), the Z-shaped shape is an N-pole 222) and the S-pole (224) alternately (alternately). For example, the N pole 222 is arranged in such a manner that two S poles 224 are alternated with each other. In the 'Z' shaped structure (second structure), a Hall sensor 130 is attached to each of two N poles 222 and two S poles 224 to extract a magnetic field value by a differential sensing method. The sensing principle of the gap h is the same as that of the 'c' magnet structure (first structure).

The Z-shaped structure (the second structure) also has the advantages of differential sensing as in the case of the 'C' magnetic structure (first structure), and at the same time, Thereby relieving the hysteresis of the hysteresis that may occur in the horizontal direction movement of the substrate 110.

The reason for relaxing the magnetic hysteresis phenomenon is that the polarity is not deflected in any direction on the surface of the target 110, and the poles that precede the moving direction of the moving object and the poles that follow directly opposite to each other have opposite polarities, Hysteresis.

Therefore, when the overall shape of the support portion 210 and the magnet portion 120 has a Z-shaped structure (second structure), the Hall sensor 130 coupled to the magnet portion 120 moves When detecting the gap h with the target, the common interference B field is removed, the sensing gain is increased, and the influence of the magnetic hysteresis phenomenon is reduced to obtain higher accuracy.

FIG. 3C is a diagram for explaining the effect of the magnetic hysteresis effect of the sensing device 200 according to the present embodiment.

As shown in FIG. 3C, the magnetic field polarities are not biased even on all the lines in the x and y directions on the plane of the target 110. In addition, even if the target 110 moves in any one of the x and y directions, the polarity opposite to the polarity follows, which results in canceling each other.

4A to 4C are views for explaining magnet shielding according to the present embodiment.

4A, a sensing device 200 having a 'C' shaped magnetic structure or a 'Z' shaped magnetic structure includes a shielding film 400 having a structure for covering the sensing device 200, Lt; / RTI > The sensing device 200 can be shielded by the combination of the shielding film 400 and the sensing device 200.

The shielding film 400 is made of a magnetic material. The shielding film 400 is connected to the sensing device 200 in a form of covering the sensing device 200. The sensing device 200 is shielded by the combination of the shielding film 400 and the sensing device 200.

4A, when the overall shape of the support portion 210 and the magnet portion 120 is a 'C' shape (first structure), the 'C' shape magnet structure is formed of a magnetic material When the shielding film 400 is enclosed in the shielding film 400, it shields from the external magnetic field, and the influence of the external magnetic field is attenuated.

4B, when the overall shape of the support portion 210 and the magnet portion 120 has a Z-shaped structure (second structure), the Z-shaped magnet structure is formed of a magnetic substance When the shielding film 400 is enclosed in the shielding film 400, it shields from the external magnetic field, and the influence of the external magnetic field is attenuated.

4C is a diagram for explaining a simulation result according to the present embodiment.

FIG. 4C is a view illustrating an example in which a sensing device 200 having a 'C' shaped magnetic structure or a 'Z' shaped magnetic structure is coupled with the shielding film 400 to perform differential sensing. 4B is a diagram illustrating an example in which a sensing device 200 having a 'C' shaped magnetic structure or a 'Z' shaped magnetic structure performs differential sensing without coupling with the shielding film 400 .

When the electromagnet is operated (interfering magnetic field application) and not operated in the situation of FIG. 4c and FIG. 4c, the magnet end of the 'C' shaped magnet structure ) Are shown in [Table 1]. In other words, in the situation of FIG. 4C, the sensing device 200 is combined with the shielding film 400 to perform differential sensing, and in the situation of FIG. 4C, The difference in the result of performing differential sensing in the state of not being coupled to the input terminal 400 is shown in Table 1.

Figure pat00003

The dimensions of the magnet unit 120, the shape of the shielding film 400, and the shape of the target 110 described in this embodiment may vary.

The foregoing description is merely illustrative of the technical idea of the present embodiment, and various modifications and changes may be made to those skilled in the art without departing from the essential characteristics of the embodiments. Therefore, the present embodiments are to be construed as illustrative rather than restrictive, and the scope of the technical idea of the present embodiment is not limited by these embodiments. The scope of protection of the present embodiment should be construed according to the following claims, and all technical ideas within the scope of equivalents thereof should be construed as being included in the scope of the present invention.

110: target 120: magnet part
130: Hall sensor 200: Sensing device
222: N pole 224: S pole
410: shielding film

Claims (6)

A support;
A magnet unit that is divided into an N pole and an S pole, the upper surface of the N pole and the S pole being coupled to each other at a position symmetrical to the lower surface of the support unit; And
And measuring the magnetic field intensity according to the distance between the magnet and the target made of a magnetic material in a differential sensing manner, respectively, A hall sensor for measuring a gap obtained by removing a common external field field interference of an external common component between the magnet portion and the target using a difference value of the magnetic field intensity,
Wherein the sensing device comprises: The method according to claim 1,
The N-pole and the S-
Wherein a length of the N pole and a length of the S pole are equal to a side length of the supporting part so that the overall shape of the supporting part and the magnet part has a 'C' shape. The method according to claim 1,
Wherein the magnet portion comprises:
And a magnet array of the N pole and the S pole whose upper surface is coupled to each corner of the support portion,
Wherein the N-pole magnet array includes a pair of N poles arranged at two corners so as to face each other in a diagonal direction of the support portion,
And the S-pole magnet array includes a pair of S-poles arranged at two corners remaining so as to face each other in the diagonal direction of the support portion. The method of claim 3,
The N-pole and the S-
And the N pole and the S pole are arranged to have a predetermined spacing distance along a side surface of the support portion. The method according to claim 3 or 4,
And the Hall sensor is disposed at the center of the lower surface of the N pole and the S pole, respectively. The method according to claim 1,
A shielding film made of a magnetic material and having a structure of covering the sensing device
Wherein the sensing device is shielded by a combination of the shielding film and the sensing device.
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