KR20170092208A - Polishing fluid for polishing aluminum films and method for polishing aluminum films with the same - Google Patents
Polishing fluid for polishing aluminum films and method for polishing aluminum films with the same Download PDFInfo
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- KR20170092208A KR20170092208A KR1020160013239A KR20160013239A KR20170092208A KR 20170092208 A KR20170092208 A KR 20170092208A KR 1020160013239 A KR1020160013239 A KR 1020160013239A KR 20160013239 A KR20160013239 A KR 20160013239A KR 20170092208 A KR20170092208 A KR 20170092208A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
The present invention relates to a polishing solution for polishing an aluminum film and an aluminum film polishing method using the same, and more particularly to a polishing method for polishing an aluminum film used for forming a damascene wiring in a semiconductor integrated circuit (hereinafter referred to as LSI) And a polishing method of an aluminum film using the polishing liquid.
2. Description of the Related Art In recent years, a new microfabrication technique has been developed along with high integration and high performance of an LSI. (Hereinafter, referred to as CMP) is one of the techniques used frequently in the LSI manufacturing process, particularly in the process of forming the multilayer wiring, flattening the interlayer insulating film, forming metal plugs, and forming buried wirings to be. This technique is disclosed in, for example, U.S. Patent No. 4944836.
The multi-machine wiring technology is expected to simplify the wiring process, improve the yield and reliability, and expand its application in the future. At present, low-resistance copper is mainly used as a wiring metal used for multi-machine wiring in high-speed logic devices. In addition, low-cost aluminum or tungsten is used for a memory device represented by a DRAM
.
However, considering the low resistance and the low cost, in any device, aluminum having a resistance lower than that of copper as a wiring metal becomes stronger.
A general method of metal CMP for polishing a metal film is to apply a polishing pad onto a circular polishing platen (platen), immersing the polishing pad surface in a polishing liquid, pressing the surface of the substrate on which the metal film is formed, (Hereinafter referred to as polishing pressure) is applied from the back surface of the polishing pad to the polishing pad, and the metal film of the convex portion is removed by mechanical friction between the polishing pad and the convex portion of the metal film. Is generally composed of an oxidizing agent and an abrasive grains, and if necessary, a metal oxide solubilizing agent is further added. The basic mechanism of CMP by the polishing liquid for CMP is considered to oxidize the surface of a metal film with an oxidizing agent and peel off the oxide layer by abrasive grains.
The oxide layer on the metal surface of the concave portion does not contact the polishing pad very much and the effect of peeling due to abrasion does not occur so that the metal layer of the convex portion is removed with the progress of CMP and the surface of the substrate is planarized. This detailed description is disclosed in Journal of Electrochemical Society, Vol. 138, No. 11, 1991, pp. 3460-3464.
In CMP, high-speed polishing of a metal film, flatness of the polishing surface, and low defect density at the polishing surface are required.
However, since the aluminum film is soft compared with other metal films for damascene wiring such as a copper film or a tungsten film, it is possible to perform high-speed polishing, but it is possible to perform CMP using a polishing liquid containing relatively hard abrasive grains such as alumina particles The surface roughness of the surface of the polished surface, particularly, the surface roughness is increased, and the smoothness is damaged,
Is remarkably deteriorated.
As described above, it is difficult to polish the surface of an aluminum film sufficiently smoothly and at a high speed in the prior art in relation to a demand for quality improvement in recent LSIs. And a polishing method of an aluminum film using the polishing liquid.
The present invention relates to (1) an abrasive for polishing an aluminum film having a pH of 2 to 4 and containing a polyvalent carboxylic acid, colloidal silica and water having an acidity index of 3 or less at the first stage at 25 占 폚.
(2) The polishing liquid for polishing an aluminum film according to (1), wherein the polyvalent carboxylic acid is at least one selected from the group consisting of oxalic acid, malonic acid and tartaric acid.
(3) The polishing liquid for polishing an aluminum film according to (1) above, wherein the secondary particles of the colloidal silica have an average particle diameter of 5 to 100 nm.
The present invention also relates to the polishing liquid for polishing an aluminum film according to any one of (1) to (3), further comprising (4) an oxidizing agent.
(5) The polishing liquid for polishing an aluminum film according to (4), wherein the oxidizing agent is at least one selected from hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid and ozonated water.
(6) The aluminum film-forming substrate is pressed against the abrasive cloth of the abrasive plate to press the aluminum film polishing abrasive liquid according to any one of (1) to (5) And the polishing plate is polished by moving the substrate and the polishing platen while supplying the polishing liquid for polishing the aluminum film to the polishing pad. . Therefore, it is possible to contribute to higher quality of an LSI or the like using an aluminum film.
The polishing liquid for polishing an aluminum film of the present invention is characterized by containing a polyvalent carboxylic acid, colloidal silica and water having an acidity index of 3 or less at the first stage at 25 ° C and having a pH of 2 to 4.
The polyvalent carboxylic acid used in the present invention is a carboxylic acid having two or more carboxyl groups in one molecule, preferably a dicarboxylic acid. The acid dissociation constant (pKa1) of the polyvalent carboxylic acid at the first stage at 25 deg. C is 3 or less, preferably 2.95 or less, more preferably 2.90 or less. The polyacasic acid having an acid dissociation constant (pKa1) of more than 3 at the first stage at 25 占 폚 has a lower polishing rate, and the object of the present invention can not be achieved. Examples of such polyvalent carboxylic acids include oxalic acid, malonic acid, tartaric acid, maleic acid, citric acid, and their ammonium salts, and they may be hydrates. Of these, oxalic acid, malonic acid and tartaric acid are preferable in view of obtaining a practical polishing rate, and oxalic acid is particularly preferable. These polyvalent carboxylic acids may be used singly or in combination of two or more. The acid dissociation constant (pKa) in the present invention is an arithmetic mean logarithm of the inverse number of the acid dissociation constant, for example, "Fourth Edition," revised 4th Edition (issued on September 30, 1993), Maruzen Co., Pages 317-321 provide detailed descriptions.
The blending amount of the polyvalent carboxylic acid in the polishing liquid for polishing an aluminum film of the present invention is preferably 0.0001 to 0.05 mol, more preferably 0.001 to 0.01 mol, per 100 g of the total weight of the polishing liquid. When the blending amount exceeds 0.05 mol, the smoothness of the aluminum film after polishing tends to deteriorate. When the blending amount is less than 0.0001 mol, a sufficient aluminum film polishing rate tends not to be obtained.
In order to accelerate the polishing rate by CMP, it is considered effective to add a metal oxide solubilizer after oxidizing the surface of the aluminum film with an oxidizing agent. This can be interpreted as the effect of peeling due to abrasion is increased by dissolving the oxide on the surface of the aluminum film peeled off by the abrasive grains into the polishing liquid. As such a metal oxide solubilizer
A substance having a chelating ability against aluminum is useful, and organic acids and inorganic acids are generally used. The inventors of the present invention have conducted extensive studies on these organic acids and inorganic acids. As a result, they have found that a polyvalent carboxylic acid having an acid dissociation index of 3 or less at the first stage at 25 DEG C has a high effect of improving the polishing rate for an aluminum film. The oxidizing agent is selected from the group consisting of hydrogen peroxide, peracetic acid, perbenzoic acid, tert-butyl hydroperoxide, potassium permanganate, potassium bichromate, potassium iodate, potassium periodate, nitric acid, iron nitrate, perchloric acid, hypochlorous acid, potassium ferricyanide, ammonium persulfate , Ozonated water and the like. Of these, hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid and ozone water are preferable, and hydrogen peroxide is particularly preferable. These oxidizing agents may be used singly or in combination of two or more.
In the case where the substrate is a silicon substrate including an element for an integrated circuit, since the contamination with an alkali metal, an alkaline earth metal, a halide or the like is not preferable, an oxidizing agent containing no nonvolatile component is preferable. In the case where the substrate to be applied is a glass substrate not including a semiconductor element, etc., it may be an oxidizing agent containing a non-volatile component.
The blending amount of the oxidizing agent in the aluminum film polishing abrasive liquid is preferably 0.1 to 50% by weight, more preferably 0.3 to 40% by weight based on the total weight of the polishing liquid. If the blending amount is less than 0.1% by weight, a sufficient polishing rate can not be obtained for the aluminum film, and if the blending amount exceeds 50% by weight, the polishing rate is not improved. In the present invention, colloidal silica . Since the colloidal silica is excellent in the smoothness of the surface of the aluminum film, the polishing liquid containing the colloidal silica can achieve the object of the present invention. Of these colloidal silicas
The average particle diameter of the secondary particles is preferably in the range of 5 to 100 nm, more preferably in the range of 10 to 90 nm. When the average particle diameter of the secondary particles is less than 5 nm, a sufficient polishing rate can not be obtained for the aluminum film. If the average particle diameter of the secondary particles exceeds 100 nm, there is a tendency that sufficient smoothness can not be obtained on the surface of the aluminum film after polishing . The average particle diameter of the secondary particles can be measured by centrifuging the polishing solution at a rotation speed of 8000 min < -1 > for 10 minutes, and measuring the supernatant by means of a zetaizer / particle size measuring device Zetasizer 3000HS manufactured by Malvern Corporation.
Examples of the colloidal silica include a fumed method in which silicon chloride or the like is reacted with oxygen and hydrogen in vapor phase, a sol-gel method in which hydrolysis and condensation are carried out from an alkoxysilane such as tetraethoxysilane, an inorganic colloid The colloidal silica synthesized by the method described above can be used. Particularly, it is preferable to use colloidal silica synthesized by a sol-gel method synthesized by hydrolysis condensation from an alkoxysilane such as tetraethoxysilane. The colloidal silica is preferably high in purity to avoid contamination of the aluminum surface. Concretely, the amount of sodium contained is preferably 10 ppm or less, more preferably 8 ppm or less, and particularly preferably 5 ppm or less. If the sodium content is more than 10 ppm, contamination of the aluminum surface with sodium may occur when used as a CMP slurry. The blending amount of the colloidal silica in the polishing liquid for polishing the aluminum film is preferably 0.01 - 10% by weight, more preferably 0.05 to 5% by weight. When the blending amount is less than 0.01% by weight, there is a tendency that a difference in polishing speed is not confirmed when a polishing solution containing no colloidal silica is used, and an improvement in polishing rate is not observed even when the blending amount exceeds 10% by weight .
The polishing liquid of the present invention is obtained by dispersing colloidal silica in slurry form in water. The blending amount of water is the balance with respect to the total amount of various components (polyvalent carboxylic acid, oxidizing agent, colloidal silica, and other optional additives).
The pH of the polishing solution for polishing an aluminum film of the present invention is in the range of 2 to 4, preferably 2.1 to 3.8, more preferably 2.2 to 3.7. If the pH is less than 2, the piping system of the polishing apparatus is damaged. Therefore, the operability is deteriorated. If the pH is more than 4, the smoothness of the surface of the aluminum film after polishing is lowered and the storage stability of the polishing liquid is impaired. Examples of the method for adjusting the pH of the polishing liquid to the above-mentioned range include a method of adjusting by the amount of the polyvalent carboxylic acid added, a method of adjusting the pH of the polishing liquid by the addition of an alkali component And a method of adjusting by the addition of an inorganic base such as ammonia. Usually, the method is carried out by a method of adjusting by adding an inorganic base such as ammonia.
In the polishing liquid of the present invention, in addition to the various components described above, a coloring agent such as a dye and a pigment, a solvent which can be mixed with water, a water-soluble polymer, and other additives generally added to the abrasive are added to the abrasive liquid May be added.
A polishing method of an aluminum film of the present invention is a method of polishing an aluminum film of the present invention by pressing and pressing a substrate having an aluminum film formed thereon with a polishing cloth of a polishing platen and supplying the polishing liquid for polishing an aluminum film of the present invention between an aluminum film and a polishing cloth, So that the aluminum film is polished.
As the substrate on which the aluminum film to be polished is formed in the present invention, a substrate related to semiconductor device manufacturing, for example, a semiconductor substrate in a stage where circuit elements and wiring patterns are formed, a semiconductor substrate in a stage where circuit elements are formed, In the polishing method of the aluminum film of the present invention, the polishing apparatus that can be used includes a holder for holding a substrate and a polishing pad (not shown) having a platen (a motor capable of changing the number of revolutions and the like) A polishing apparatus, or the like, and is not particularly limited. For example, FACT-200, a polishing apparatus made by NANO FACTOR Co., Ltd., may be used.
Examples of the polishing cloth include general nonwoven fabric, foamed polyurethane, porous fluororesin, and the like, and there is no particular limitation, but it is preferable to perform grooving so that the abrasive for abrading the aluminum film remains on the polishing cloth.
There is no limitation on the polishing conditions, but the rotation speed of the surface plate is preferably a low rotation of 200 min -1 or less so that the substrate does not protrude, and the pressure applied to the substrate is 1 kg / Cm < 2 > (98 kPa) or less.
The method of supplying the polishing liquid for polishing an aluminum film of the present invention to the polishing apparatus is not particularly limited as long as the polishing liquid can be continuously supplied to the polishing cloth while being polished by a pump or the like. The supply amount of the polishing liquid is not particularly limited, but it is preferable that the surface of the polishing cloth is always covered with the polishing liquid. Specifically, it is preferable to supply 0.001 to 1 milliliter per 1 cm 2 of the polishing cloth area. To move the substrate and the polishing platen while pressing the aluminum film of the substrate with the polishing cloth, specifically,
You can move at least one of them. In addition to rotating the polishing platen, the holder may be polished by rotating or oscillating. In addition, a polishing method of rotating the polishing table by oily rotation, a polishing method of moving the polishing cloth on the belt in one direction in the long direction, and the like can be given. The holder may be in any state of fixing, rotating, and rocking. These polishing methods can be appropriately selected by a polishing apparatus or the like.
It is preferable that the substrate after polishing is thoroughly washed in running water and then dried by dropping off water droplets adhering to the substrate by using a spin dryer or the like.
It is possible to polish the surface of the aluminum film smoothly and at a high speed by polishing the substrate on which the aluminum film is formed by using the polishing liquid for polishing an aluminum film of the present invention. By polishing using the polishing solution for aluminum film polishing of the present invention, polishing at a polishing rate of 25 nm / min or more and an average surface roughness (Ra) of 1 nm or less becomes possible.
In the present invention, the index of smoothness is the average surface roughness (Ra) of the surface of the aluminum film after completion of polishing, and the surface of the aluminum film is measured using a scanning probe microscope (SPI3800N / SPA500, manufactured by Seiko Instruments Inc.) Square. ≪ / RTI > The polishing rate was calculated from the polishing time by calculating the difference in film thickness between the aluminum film on the substrate before and after polishing from the sheet resistance value.
The polishing liquid for polishing an aluminum film of the present invention is particularly suitable for polishing an aluminum film for an LSI, but can also be used for polishing an aluminum film for other purposes.
Included in the solution to the problem.
Example 1
0.47% by weight of oxalic acid dihydrate (0.00373 mol based on 100 g of the total polishing liquid) was dissolved in water to dissolve 5% by weight of colloidal silica having a mean particle diameter of 50 nm and a colloidal silica concentration of 1% by weight 10% by weight of 30% hydrogen peroxide solution was added, and then the pH was adjusted to 2.5 with a 25% by weight ammonia water to prepare an aluminum film polishing abrasive liquid (A).
The colloidal silica was produced by hydrolysis of tetraethoxysilane in an ammonia solution according to a conventional method.
Next, CMP treatment was performed under the following polishing conditions while dropping the polishing solution (A) for polishing an aluminum film obtained above onto a pad attached to a platen, and the following evaluations were carried out. The evaluation results are shown in Table 1.
(Polishing condition)
Polishing apparatus: FACT-200 manufactured by NANO FACTOR CO., LTD.
Polishing pad: foamed polyurethane resin with closed cells
Polishing pressure: 30 kPa (300 gf / cm 2) Flow rate of polishing solution: 11 cc / min
Polishing time: 1 minute
(Substrate used)
A silicon substrate (2 cm in length and width) on which an aluminum film having a thickness of 2.4 m was formed,
Average surface roughness (Ra) before polishing: 3.1 nm
(Evaluation Items and Evaluation Methods)
Polishing speed for aluminum film by CMP: The film thickness difference before and after polishing of the substrate was calculated from the change in the sheet resistance value and calculated from the polishing time.
Average Surface Roughness: The average surface roughness of the aluminum film after polishing was obtained by measuring the surface roughness at 5 micron square using a scanning probe microscope (SPI3800N / SPA500, manufactured by Seiko Instruments Inc.).
As a result of the evaluation, the polishing rate for the aluminum film was 65 nm / min and the average surface roughness (Ra) was 0.4 nm, and polishing was performed at high speed and good smoothness was exhibited. Example 2
A polishing solution (B) for polishing an aluminum film was produced by the same procedure as in Example 1 except that hydrogen peroxide solution was not added.
Next, polishing was carried out in the same manner as in Example 1, using the abrasive liquid for polishing an aluminum film (B) obtained above, and the evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 63 nm / min, and the average surface roughness (Ra) was 0.4 nm, and polishing at a high speed and good smoothness were exhibited.
Example 3
An aluminum film polishing abrasive liquid (C) was produced in the same manner as in Example 1, except that 3% by weight of hydrogen peroxide was used at a concentration of 30%.
Next, polishing was carried out in the same manner as in Example 1, using the abrasive liquid (C) for polishing an aluminum film obtained as described above, and the evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 63 nm / min and the average surface roughness (Ra) was 0.4 nm, and polishing was performed at a high speed and excellent smoothness was also exhibited. Example 4 Instead of 0.47% by weight of oxalic acid dihydrate The polishing liquid D for polishing an aluminum film was produced in the same manner as in Example 1 except that 0.56 wt% of tartaric acid (0.00373 mol per 100 g of the polishing liquid) was used.
Next, polishing was carried out by the same method as in Example 1, using the abrasive liquid (D) for polishing the aluminum film obtained above, and the evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 32 nm / min and the average surface roughness (Ra) was 0.6 nm, which enabled polishing at a high speed and exhibited good smoothness.
Example 5
A polishing solution (E) for polishing an aluminum film was produced in the same manner as in Example 1 except that 0.39 wt% of malonic acid (0.00375 mol per 100 g of the polishing solution total amount) was used instead of 0.47 wt% of oxalic acid dihydrate.
Next, polishing was carried out in the same manner as in Example 1, using the abrasive liquid (E) for polishing an aluminum film obtained as described above, and evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 41 nm / min, and the average surface roughness (Ra) was 0.6 nm, and polishing at a high speed and good smoothness were exhibited.
Example 6
20% by weight of secondary particles having an average particle size of 50 nm, 20% by weight of secondary particles having an average particle diameter of 80 nm instead of 5% by weight of colloidal silica, 5% by weight of colloidal silica (1% by weight as solid content) The polishing liquid F for polishing an aluminum film was prepared.
Next, polishing was carried out in the same manner as in Example 1, using the abrasive liquid for polishing an aluminum film (F) obtained above, and the evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 67 nm / min, and the average surface roughness (Ra) was 0.8 nm, which enabled polishing at a high speed and exhibited good smoothness.
Example 7
An aluminum film polishing abrasive liquid (G) was produced in the same manner as in Example 6 except that hydrogen peroxide solution was not added.
Next, polishing was carried out in the same manner as in Example 1 using the abrasive liquid (G) for polishing an aluminum film obtained as described above, and evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 70 nm / min, and the average surface roughness (Ra) was 0.8 nm, and polishing at a high speed and good smoothness were exhibited.
Example 8
Using the same components as in Example 1, the addition amount of ammonia water was controlled to adjust the pH to 3.0 to prepare an aluminum film polishing abrasive liquid (H).
Next, polishing was carried out in the same manner as in Example 1, using the abrasive liquid (H) for abrading the aluminum film obtained above, and the evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 64 nm / min and the average surface roughness (Ra) was 0.8 nm, and polishing was performed at a high speed and good smoothness was exhibited.
Comparative Example 1
An aluminum film polishing abrasive liquid (I) was produced in the same manner as in Example 1 except that 0.5% by weight of malic acid (0.00373 mol per 100 g of the polishing liquid) was used instead of 0.47% by weight of oxalic acid dihydrate.
Next, polishing was carried out in the same manner as in Example 1 using the polishing liquid (I) for polishing an aluminum film obtained as described above, and evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 15 nm / min, the average surface roughness (Ra) was 0.6 nm, the smoothness was good, but the polishing rate was greatly lowered than in Examples 1 to 8.
Comparative Example 2
Using the same components as in Example 1, the addition amount of ammonia water was controlled to adjust the pH to 5.0 to prepare an aluminum film polishing abrasive liquid (J).
Next, polishing was carried out in the same manner as in Example 1, using the abrasive liquid (J) for polishing an aluminum film obtained as described above, and evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 64 nm / min and the average surface roughness (Ra) was 1.4 nm, and the polishing was performed at a high speed, but the smoothness of the aluminum film surface was worse than in Examples 1 to 8.
Comparative Example 3
The procedure of Example 1 was repeated except for using 5 wt% of a 20 wt% fumed silica suspension having a mean particle size of 160 nm (1 wt% as solids content) instead of 5 wt% of a 20 wt% colloidal silica having an average particle size of 50 nm To thereby prepare a polishing abrasive liquid (K). The fumed silica suspension was prepared by suspending Aerosil 200 (manufactured by Aerosil Co., Ltd.) in pure water and ultrasonic dispersion.
Next, polishing was carried out in the same manner as in Example 1 using the abrasive liquid (K) for abrading the aluminum film obtained above, and the evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 89 nm / min and the average surface roughness Ra was 1.6 nm, which enabled polishing at a high speed, but the smoothness of the aluminum surface was worse than those in Examples 1 to 8.
Comparative Example 4
An aluminum film polishing abrasive liquid (L) was prepared in the same manner as in Example 1 except that 0.52 wt% of bromoacetic acid (0.00374 mol per 100 g of abrasive liquid) was used instead of 0.47 wt% of oxalic acid dihydrate.
Next, polishing was carried out in the same manner as in Example 1 using the polishing liquid (L) for polishing an aluminum film obtained as described above, and evaluation was carried out. As a result of the evaluation, the polishing rate for the aluminum film was 18 nm / min, the average surface roughness (Ra) was 0.8 nm, the smoothness was good, but the polishing rate was greatly lowered than in Examples 1 to 8.
The compositions of the abrasive liquids and the abrasion evaluations in Examples 1 to 8 and Comparative Examples 1 to 4 are shown in Tables 1 and 2, respectively.
The concentrations (% by weight) of the abrasive grains, organic acid and oxidizing agent in Table 1 and Table 2 represent the concentration of each component with respect to the total weight of the abrasive liquid.
Table 1
Table 2
Claims (6)
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