KR20170078346A - Method for preparing organic thin film including organic semiconductor and dielectric polymer using zone casting process and organic thin film transistor comprising organic thin film prepared thereby - Google Patents
Method for preparing organic thin film including organic semiconductor and dielectric polymer using zone casting process and organic thin film transistor comprising organic thin film prepared thereby Download PDFInfo
- Publication number
- KR20170078346A KR20170078346A KR1020150188775A KR20150188775A KR20170078346A KR 20170078346 A KR20170078346 A KR 20170078346A KR 1020150188775 A KR1020150188775 A KR 1020150188775A KR 20150188775 A KR20150188775 A KR 20150188775A KR 20170078346 A KR20170078346 A KR 20170078346A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- organic thin
- organic
- organic semiconductor
- film transistor
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 229920000642 polymer Polymers 0.000 title claims abstract description 48
- 238000005266 casting Methods 0.000 title claims abstract description 18
- 239000012212 insulator Substances 0.000 claims abstract description 47
- 239000011259 mixed solution Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000011247 coating layer Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 7
- -1 triethylsilylethynyl Chemical group 0.000 claims description 9
- MVPPADPHJFYWMZ-UHFFFAOYSA-N Chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- 229920002223 polystyrene Polymers 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- SLIUAWYAILUBJU-UHFFFAOYSA-N Pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000004698 Polyethylene (PE) Substances 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229910021478 group 5 element Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001548 drop coating Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000877 morphologic Effects 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- FMZQNTNMBORAJM-UHFFFAOYSA-N tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]pentacen-6-yl]ethynyl]silane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C3=CC2=C1 FMZQNTNMBORAJM-UHFFFAOYSA-N 0.000 description 2
- 101700047202 BEST1 Proteins 0.000 description 1
- 206010057190 Respiratory tract infection Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010192 crystallographic characterization Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C15/00—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts
- C07C15/20—Polycyclic condensed hydrocarbons
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/28—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
- H01L27/32—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
- H01L27/3241—Matrix-type displays
- H01L27/3244—Active matrix displays
- H01L27/3274—Active matrix displays including organic thin film transistors [OTFT]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
- H01L51/0052—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H01L51/0055—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/10—Details of devices
- H01L51/107—Passivation, containers, encapsulations
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2251/00—Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
- H01L2251/10—Processes specially adapted for the manufacture or treatment of organic semiconductor devices
Abstract
(A) preparing a mixed solution by mixing 20 to 40% by weight of an organic semiconductor and 60 to 80% by weight of a polymeric insulator having a molecular weight of 3 to 40 kDa in a solvent; (b) coating the mixed solution on the substrate using zone casting to form a coating layer; And (c) drying the coating layer.
According to the method of manufacturing an organic thin film according to the present invention, a mixed solution obtained by mixing a polymer insulator and an organic semiconductor on a substrate is coated by a zone casting method to reduce the use amount of an organic semiconductor, which is a costly material, And an organic thin film having excellent electrical characteristics of a large area can be produced.
In addition, since the electrical characteristics of the organic thin film can be controlled by controlling the mixing ratio of the polymer insulator and the organic semiconductor, the organic thin film transistor can be utilized for manufacturing an organic thin film transistor that can be used for various applications.
Description
The present invention relates to a method of manufacturing an organic thin film including an organic semiconductor and a polymer insulator by using a zone casting process, and an organic thin film transistor including the organic thin film produced thereby.
A thin film transistor (TFT) is used as a driving element for controlling the operation of each pixel in various display devices and is expected to be used in a plastic chip for a smart card or an inventory tag .
Conventionally, an inorganic semiconductor material such as silicon (Si) has been generally used as a channel layer of a thin film transistor. However, in recent years, due to the large size, low cost and flexibility of a display, Semiconducting materials, and recently organic thin film transistors (OTFTs) using organic thin films as semiconductor layers have been actively studied.
The organic thin film transistor uses an organic thin film instead of a silicon film as a semiconductor layer. The organic thin film transistor includes a low-molecular organic thin film transistor using a low molecular material such as oligothiophene or pentacene and a polythiophene (polythiophene) series, and the like.
The organic thin film transistor generally includes a dielectric layer, an organic semiconductor layer, and a protective layer formed on the substrate by a method such as drop coating or spin casting, And is manufactured in the form of a multilayer thin film.
However, the solution process using the above-mentioned drop coating or spin casting is difficult to apply to the manufacture of a large-area thin film, and it is disadvantageous in that it is economically disadvantageous because it is manufactured using a large amount of expensive organic semiconductors.
Therefore, in order to solve the above-mentioned problems, there is a need for research on a method which can provide an organic semiconductor having a low content, an excellent electrical characteristic, and a method capable of effectively utilizing a large-area thin film in a single process.
Disclosure of the Invention The present invention has been devised to solve the problems of the prior art as described above, and it is an object of the present invention to provide a method of manufacturing a semiconductor device, which comprises a step of casting a mixed solution containing an organic semiconductor and a polymer insulator on a substrate, The present invention is directed to a method for manufacturing an organic thin film which is capable of performing a large-scale process which can not be performed, and which has a low content of an organic semiconductor but is excellent in electrical characteristics.
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (a) preparing a mixed solution by mixing 20 to 40% by weight of an organic semiconductor and 60 to 80% by weight of a polymeric insulator having a molecular weight of 3 to 40 kDa in a solvent; (b) coating the mixed solution on the substrate using zone casting to form a coating layer; And (c) drying the coating layer.
In addition, the organic semiconductor may be formed by using triisopropylsilylethynyl pentacene (TIPS-PEN), triethylsilylethynyl anthradithiophene (TES-ADT), and fluorinated triethylsilylethynyl anthra And at least one selected from the group consisting of fluorinated triethylsilylethynyl anthradithiophene (diF TES-ADT).
The polymer insulator may include at least one selected from the group consisting of polystyrene (PS) -based polymers, polyacrylate-based polymers, and polyethylene (PE) -based polymers.
The solvent may be at least one selected from the group consisting of toluene, chlorobenzene, chloroform and dichloroethane.
Further, the substrate is an SiO 2 substrate.
The present invention also provides an organic thin film transistor comprising an organic thin film produced by the above-described method.
The organic thin film has a thickness of 10 to 50 nm.
Also, the organic thin film transistor includes an organic thin film containing 60 to 70% by weight of a 4 kDa polymer insulator and 30 to 40% by weight of an organic semiconductor, and has a charge mobility of 0.9 to 1.35 (cm 2 / Vs) .
According to the method of manufacturing an organic thin film according to the present invention, a mixed solution obtained by mixing a polymer insulator and an organic semiconductor on a substrate is coated by a zone casting method to reduce the use amount of an organic semiconductor, which is a costly material, And an organic thin film having excellent electrical characteristics of a large area can be produced.
In addition, since the electrical characteristics of the organic thin film can be controlled by controlling the mixing ratio of the polymer insulator and the organic semiconductor, the organic thin film transistor can be utilized for manufacturing an organic thin film transistor that can be used for various applications.
1 is a conceptual view showing a method of manufacturing an organic thin film according to Embodiment 1. FIG.
FIG. 2 is an optical microscope (OM) image and atomic force microscope (AFM) image of the organic thin film layer prepared by the method according to Example 1 at different mixing ratios of the polymer insulator and the organic semiconductor.
FIG. 3 is an optical microscope (OM) image and atomic force microscope (AFM) image of the organic thin film layer prepared by the method according to Example 2 at different mixing ratios of the polymer insulator and the organic semiconductor.
FIG. 4 is a graph showing changes in electrical characteristics of the organic thin film transistor according to the mixing ratio of the polymer insulator and the organic semiconductor prepared by (a) Example 1 and (b) Example 2.
The present invention relates to a method for fabricating an organic thin film on a substrate by controlling the electrical characteristics of the organic thin film by controlling the mixing ratio of the organic semiconductor and the polymer insulator, coating the mixed solution containing the organic semiconductor and the polymer insulator by a zone casting process, .
Hereinafter, the present invention will be described in detail.
(A) preparing a mixed solution by mixing 20 to 40% by weight of an organic semiconductor and 60 to 80% by weight of a polymeric insulator having a molecular weight of 3 to 40 kDa in a solvent; (b) coating the mixed solution on the substrate using zone casting to form a coating layer; And (c) drying the coating layer.
The step (a) is a step of preparing a mixed solution including an organic semiconductor and a polymer insulator. In this step, a mixed solution for preparing an organic thin film is prepared by a solution process using a zone casting method.
The organic semiconductor may be a variety of organic semiconductor materials that can be mixed with the polymer insulator to form an organic thin film by a solution process, and a polymer, an oligomer having a low molecular weight, or an organic semiconductor in the form of a single molecule may be used. In addition, the organic semiconductor may be crystallized by moving the organic semiconductor material remaining in the polymer insulator thin film to the organic semiconductor thin film through a drying process.
Such organic semiconductors include triisopropylsilylethynyl pentacene (TIPS-PEN), triethylsilylethynyl anthradithiophene (TES-ADT), florinated triethylsilylethynyltetradecyl (Fluorinated triethylsilylethynyl anthradithiophene, diF TES-ADT), or a mixture thereof. Typical examples include TIPS-PEN.
In addition, the polymer insulator can use various polymer materials that can be mixed with the organic semiconductor and form an organic thin film through a solution process. Any crystalline or amorphous polymer insulator can be used, It is possible to use a noncrystalline polymer insulator which can maintain electrical characteristics even when the content is reduced. Particularly, it is preferable to use a material having a relatively large surface energy as compared with the organic semiconductor material so as to form a film below the organic semiconductor thin film when the polymeric insulating material is coated on the substrate, and a polyacrylate- Polymer, polystyrene (PS) based polymer, polyethylene (PE) based polymer, or a mixture thereof, and more preferably, amorphous polystyrene based polymer can be used.
According to the method for producing an organic thin film according to the present invention, the polymeric insulator can control the crystallinity of the organic thin film according to the molecular weight, thereby controlling the electrical characteristics of the organic thin film. For this purpose, the polymeric insulator preferably has a molecular weight of 3 to 40 kDa. When the molecular weight of the polymeric insulator is less than 1 kDa or more than 40 kDa, the electrical characteristics of the organic thin film to be produced are excellent The polymer insulator having a molecular weight within the above range can be used. More preferably, the polymer insulator having a molecular weight of 3 to 5 kDa can be used.
The mixed solution may be prepared by mixing 20 to 40% by weight of the organic semiconductor and 60 to 80% by weight of a polymeric insulator having a molecular weight of 3 to 40 kDa with a solvent to form a mixed solution. The crystallinity can be controlled by controlling the mixing ratio, and the electrical characteristics of the organic thin film formed in the step described later can be controlled.
The solvent may be any material capable of simultaneously dissolving the organic semiconductor material and the polymer insulator, and examples thereof include toluene, chlorobenzene, chloroform, dichloroethane, and mixtures thereof.
In the step (b), the mixed solution is coated on the substrate using a zone casting method to form a coating layer.
The substrate has a hydrophilic substrate having a large surface energy such that a polymer insulating layer having a large surface energy is formed at the bottom and an organic semiconductor layer is formed at an upper portion when the organic semiconductor and the polymer insulator are coated by a single process by a zone casting method And a SiO 2 substrate is a typical example.
In this step, a coating layer for forming an organic thin film can be prepared by coating the mixed solution prepared as described above on a substrate by a zone casting method, and a large-area process which can not be realized by spin casting and drop coating in a single process This is possible.
In the step (c), the coating layer may be dried to form an organic thin film including a polymer insulator and crystals of an organic semiconductor on the substrate. Such drying can be carried out by various methods such as room temperature drying or hot air drying.
According to the method of manufacturing an organic thin film according to the present invention as described above, the content of an organic semiconductor, which is an expensive material, is low through a single process of coating a mixed solution of a polymer insulator and an organic semiconductor on a substrate by a zone casting method A large-area organic thin film having excellent electrical characteristics can be produced.
In addition, since the electrical characteristics of the organic thin film can be controlled by controlling the mixing ratio of the polymer insulator and the organic semiconductor, the organic thin film transistor can be utilized for manufacturing an organic thin film transistor that can be used for various applications.
The present invention also provides an organic thin film transistor fabricated by the above-described method.
The organic thin film transistor may be formed by forming an organic thin film on the substrate on which the gate electrode is formed through the method of forming the organic thin film, and then forming a drain and a source electrode connected to the organic thin film.
The organic thin film transistor exhibits excellent electrical characteristics by forming an organic thin film through a zone casting process. Particularly, a mixed solution containing 60 to 70 wt% of a 4 kDa polymer insulator and 30 to 40 wt% as the organic thin film comprising an organic thin film of 10 to 50 nm thickness was formed on a substrate transistor exhibits excellent electric characteristics as a charge mobility of 0.4 to 1.35 μ (cm 2 / Vs) .
Therefore, the organic thin film transistor described above can be effectively utilized as an organic thin film transistor suitable for various applications.
Hereinafter, the present invention will be described in more detail with reference to examples.
The embodiments presented are only a concrete example of the present invention and are not intended to limit the scope of the present invention.
≪ Example 1 >
n-doped silicon was used as a gate electrode, and a gate insulating layer made of SiO 2 was formed thereon. And 30 wt% and 100 wt% of TIPS-pentacene as an organic semiconductor on the gate insulating layer, and each of the mixed solutions containing 0 to 70 wt% of amorphous polystyrene having a molecular weight of 4 kDa as a polymer insulator A 50 nm thick organic active layer was formed by a zone casting process. Then, a source electrode and a drain electrode made of gold (Au) were formed on the organic active layer to manufacture an organic thin film transistor (see FIG. 1).
≪ Example 2 >
A mixed solution was prepared in the same manner and in the same manner as in Example 1, except that amorphous polystyrene having a molecular weight of 35 kDa was used as a polymer insulator and 20 wt% and 100 wt% of TIPS-pentacene were mixed. To prepare an organic thin film transistor.
Experimental Example 1 Morphological Characterization of Organic Thin Films Prepared by the Method According to Examples 1 and 2
In order to analyze the morphological characteristics of the organic thin film layer formed on the prepared organic thin film transistor, crystals formed on the organic thin film layer prepared by using optical microscope (OM) and atomic force microscope (AFM) were analyzed , And the results of the analysis are shown in Fig. 2 and Fig.
As shown in FIG. 2 and FIG. 3, it was confirmed that organic thin film layers of different crystals were prepared according to the contents of the polymer insulator and the organic semiconductor, and the molecular weight of the polymer insulator increased in the production of the organic thin film transistor As the crystal grain size decreases, the crystallinity increases. As the content of the polymer insulator increases, the grain boundaries decrease and the crystallinity increases. Thus, it is possible to control the crystallinity of the organic thin film layer by controlling the molecular weight and content of the polymer insulator. .
<Experimental Example 2> Electrical characteristics of the organic thin film transistor fabricated by the method according to Examples 1 and 2
The charge mobility in the parallel direction of the organic thin film transistor manufactured by the method according to Examples 1 and 2 was measured and the results are shown in FIG.
As shown in FIG. 4, it was confirmed that the organic thin film device manufactured by the method according to Example 1 exhibits excellent characteristics with a charge mobility exceeding 0.1 μ (cm 2 / Vs) And the polymeric insulator, the charge mobility was found to be different.
It was confirmed that the organic thin film device manufactured by the method according to Example 2 exhibits excellent characteristics with a charge mobility exceeding 0.1 μ (cm 2 / Vs) It was confirmed that the charge mobility was different.
In particular, the embodiment, when depending on one of the organic thin film transistor made of a mixed solution containing 60% by weight of the polymer insulator has a molecular weight of the organic semiconductor 40% by weight, and 4 kDa, the charge mobility is best 1 μ (cm 2 / Vs). However, in the case of an organic thin film transistor made of a mixed solution containing an organic semiconductor at a ratio exceeding 40% by weight, the charge mobility is drastically lowered, and the molecular weight of 4 kDa The content of the organic semiconductor is preferably 20 to 40% by weight for the production of the organic thin film device including the polymeric insulator.
According to Example 2, in the case of an organic thin film transistor manufactured from a mixed solution containing 80 wt% of a polymer insulator having a molecular weight of 20 kWa and an organic semiconductor of 20 wt%, the charge mobility was the most excellent and 0.5 mu m (cm 2 / Vs ). However, it can be confirmed that the charge transport mobility is drastically lowered in the organic thin film transistor made of the mixed solution containing the organic semiconductor at a ratio exceeding 40% by weight there was.
Claims (8)
(b) coating the mixed solution on the substrate using zone casting to form a coating layer; And
(c) drying the coating layer.
The organic semiconductor may be selected from the group consisting of triisopropylsilylethynyl pentacene (TIPS-PEN), triethylsilylethynyl anthradithiophene (TES-ADT) and fluorinated triethylsilylethynyl anthradydiophene (fluorinated triethylsilylethynyl anthradithiopene, diF TES-ADT).
Wherein the polymeric insulator comprises at least one selected from the group consisting of polystyrene (PS) -based polymers, polyacrylate-based polymers, and polyethylene (PE) -based polymers. Gt;
Wherein the solvent is at least one selected from the group consisting of toluene, chlorobenzene, chloroform, and dichloroethane.
Wherein the substrate is a Group 5 element doped n-type silicon substrate.
Wherein the organic thin film has a thickness of 10 to 50 nm.
Wherein the organic thin film comprises an organic thin film containing 60 to 70 wt% of a 4 kDa polymer insulator and 30 to 40 wt% of an organic semiconductor, and has a charge mobility of 0.9 to 1.35 mu (cm 2 / Vs).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150188775A KR20170078346A (en) | 2015-12-29 | 2015-12-29 | Method for preparing organic thin film including organic semiconductor and dielectric polymer using zone casting process and organic thin film transistor comprising organic thin film prepared thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150188775A KR20170078346A (en) | 2015-12-29 | 2015-12-29 | Method for preparing organic thin film including organic semiconductor and dielectric polymer using zone casting process and organic thin film transistor comprising organic thin film prepared thereby |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170078346A true KR20170078346A (en) | 2017-07-07 |
Family
ID=59353568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150188775A KR20170078346A (en) | 2015-12-29 | 2015-12-29 | Method for preparing organic thin film including organic semiconductor and dielectric polymer using zone casting process and organic thin film transistor comprising organic thin film prepared thereby |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20170078346A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102231942B1 (en) | 2019-10-29 | 2021-03-25 | 한밭대학교 산학협력단 | Apparatus having patterned solution shearing coater of roll to roll type for forming a thin film of organic semiconductor |
-
2015
- 2015-12-29 KR KR1020150188775A patent/KR20170078346A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102231942B1 (en) | 2019-10-29 | 2021-03-25 | 한밭대학교 산학협력단 | Apparatus having patterned solution shearing coater of roll to roll type for forming a thin film of organic semiconductor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hofmockel et al. | High-mobility organic thin-film transistors based on a small-molecule semiconductor deposited in vacuum and by solution shearing | |
| Jung et al. | A TIPS-TPDO-tetraCN-based n-type organic field-effect transistor with a cross-linked PMMA polymer gate dielectric | |
| Lin et al. | Solution-processed high performance organic thin film transistors enabled by roll-to-roll slot die coating technique | |
| US8946685B2 (en) | Method of making an organic thin film transistor | |
| KR101376494B1 (en) | Fabricating low-cost polymer thin-film transistors via formation of semiconducting nanofibrillar network in semiconducting/insulating polymer blends | |
| KR20100070652A (en) | A facile route to flexible all-organic field-effect transistors by all-solution process | |
| US20070215957A1 (en) | Gate dielectric structure and an organic thin film transistor based thereon | |
| Chang et al. | Enhanced Polymer Thin Film Transistor Performance by Carefully Controlling the Solution Self‐Assembly and Film Alignment with Slot Die Coating | |
| WO2010002048A1 (en) | Ink-jet print ink and organic thin film transister using thereof | |
| Han et al. | Solvent-dependent electrical properties improvement of organic field-effect transistor based on disordered conjugated polymer/insulator blends | |
| Watanabe et al. | Microcrystallization of a solution-processable organic semiconductor in capillaries for high-performance ambipolar field-effect transistors | |
| Pan et al. | Multicomponent blend systems used in organic field-effect transistors: charge transport properties, large-area preparation, and functional devices | |
| US9070881B2 (en) | Method of manufacturing an organic semiconductor thin film | |
| KR20160112030A (en) | Thin-film transistor having dual gate electrode | |
| KR20100031036A (en) | A manufacturing method of a thin film organic semiconductor using a phase seperation of blend of organic semiconductor/insulating polymer and organic thin film transister | |
| Han et al. | Molecular orientation control of liquid crystal organic semiconductor for high-performance organic field-effect transistors | |
| Jiang et al. | Organic thin film transistors with novel thermally cross-linked dielectric and printed electrodes on flexible substrates | |
| US20150123105A1 (en) | Off-center spin-coating and spin-coated apparatuses | |
| KR101451301B1 (en) | Preparing method of patterned template-assisted self-assembly organic thin film electron device and the patterned template-assisted self-assembly organic thin film electron device thereby | |
| Kumagai et al. | Role of Perfluorophenyl Group in the Side Chain of Small-Molecule n-Type Organic Semiconductors in Stress Stability of Single-Crystal Transistors | |
| KR20170078346A (en) | Method for preparing organic thin film including organic semiconductor and dielectric polymer using zone casting process and organic thin film transistor comprising organic thin film prepared thereby | |
| Zhang et al. | Fabrication and physical properties of self-assembled ultralong polymer/small molecule hybrid microstructures | |
| Sannigrahi et al. | Crystalline graphite oxide/PVDF nanocomposite gate dielectric: Low‐voltage and high field effect mobility thin‐film transistor | |
| KR20150130363A (en) | Method for forming organic thin film | |
| KR20170098776A (en) | Method for preparing organic thin film using zone cast process and organic thin film transistor comprising organic thin film prepared thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |