KR20170068273A - electrical circuit apparatus for reduction of parasitic inductance, electrical wire for supplying power soure therefor and method for connecting the electrical wire - Google Patents

electrical circuit apparatus for reduction of parasitic inductance, electrical wire for supplying power soure therefor and method for connecting the electrical wire Download PDF

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Publication number
KR20170068273A
KR20170068273A KR1020150175278A KR20150175278A KR20170068273A KR 20170068273 A KR20170068273 A KR 20170068273A KR 1020150175278 A KR1020150175278 A KR 1020150175278A KR 20150175278 A KR20150175278 A KR 20150175278A KR 20170068273 A KR20170068273 A KR 20170068273A
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KR
South Korea
Prior art keywords
conductive line
line portion
load
power source
wire
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KR1020150175278A
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Korean (ko)
Inventor
장태은
Original Assignee
엘에스산전 주식회사
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Priority to KR1020150175278A priority Critical patent/KR20170068273A/en
Publication of KR20170068273A publication Critical patent/KR20170068273A/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/025Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance

Abstract

A first conductive line portion installed to connect the positive terminal of the power source and the positive terminal of the load; A second conductive line portion connected to the negative terminal of the power source and the negative terminal of the load; A third conductive line portion connecting the positive terminal of the power source and the positive terminal of the load, the third conductive line portion being adjacent to the first circuit to form a high frequency current path with the first conductive line portion; And a fourth conductive line portion connecting the negative terminal of the power source and the negative terminal of the load and being adjacent to the second circuit to form a high frequency current path with the second conductive line portion, An electric circuit device is provided.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric circuit device for reducing parasitic inductance, a power supply line for the power supply device, and a method of connecting the electric wire to the electric circuit device.

More particularly, the present invention relates to a reduction in parasitic inductance in an electric circuit device, and more particularly, to a parasitic inductance reduction device in which a parasitic inductance attenuation portion is provided adjacent to a conductive line portion connecting a power source and a load, To an electric circuit device for reducing an inductance which causes an inductance cancellation due to the formation of a current path in the opposite direction, thereby effectively reducing the total parasitic inductance, and a power supply wire and a wire connection method therefor.

Noise is generated in the electric circuit, such as electricity, power electronics, and transmission and distribution. The noise of the electric circuit is not only subject to regulation by EMI and EMC, but it also causes malfunction of the circuit and destruction of the constituent elements of the circuit.

1 is a view for explaining a general electric circuit device.

1, a general electric circuit device 10 includes a power supply 11 and a load 12 connected to a first conductive line portion 13 and a second conductive line portion 14, And power is supplied. The power source 11 may be a voltage source or a current source. The load 12 is a main body that consumes the power supplied from the power source 11. The first conductive line portion 13 and the second conductive line portion 14 are provided to connect the power source 11 and the load 12. Specifically, the first conductive line portion 13 is connected to connect the positive terminal of the power source 11 and the positive terminal of the load 12. The second conductive line portion 14 is connected to connect the negative terminal of the power source 11 and the negative terminal of the load 12.

Undesired noise may be generated by the first conductive line portion 13 and the second conductive line portion 14 connecting the power source 11 and the load 12. [

2 is an equivalent circuit of the electric circuit device shown in Fig.

Referring to FIG. 2, the first conductive line portion 13 of FIG. 1 may be represented by an equivalent circuit including a first resistor 13a and a first inductor 13b. The second conductive line portion 14 of FIG. 1 may be represented by an equivalent circuit including a second resistor 14a and a second inductor 14b.

The first conductive line portion 13 and the second conductive line portion 14 are connected to the first inductor 13b and the second inductor 14b by resistance components expressed by a first resistor 13a and a second resistor 14a, As shown in Fig. These resistive components and inductance components are called parasitic resistance and parasitic inductance, respectively, in that they are not necessary components, not the designer. Particularly, the parasitic inductance represented by the first inductor 13b and the second inductor 14b is a main cause of noise.

Therefore, the main cause of the noise generated by the first conductive line portion 13 and the second conductive line portion 14 is that the parasitic inductance of the first conductive line portion 13 and the second conductive line portion 14 , The parasitic capacitance, and the time variation (dv / dt, di / dt) of voltage and current.

The length of the first conductive line portion 13 and the second conductive line portion 14 connecting the power source 11 and the load 12 and the length of the first conductive line portion 13 and the second conductive line portion 14, The magnitude of the parasitic inductance component.

A method of reducing the parasitic inductance component is to shorten the lengths of the first conductive line portion 13 and the second conductive line portion 14 or to shorten the lengths of the first conductive line portion 13 and the second conductive line portion 14 It is to shorten the distance. In other words, when the distance between the first conductive line portion 13 and the second conductive line portion 14 is made close to each other, parasitic inductances mutually cancel each other and the total parasitic inductance is reduced.

However, in the case of high voltage, since there is an insulation problem between the first conductive line portion 13 and the second conductive line portion 14, the distance between the first conductive line portion 13 and the second conductive line portion 14 is close to There is a limit to be able to keep it, and to distance it by a certain distance.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a parasitic inductance attenuator in which a parasitic inductance attenuator is provided adjacent to a conductive line portion connecting a power source and a load so that current flows in a high frequency band, The inductance of the inductance of the inductance of the inductance of the inductance of the inductance of the inductance of the inductance of the inductance of the inductance of the inductance is reduced.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description will be.

According to an aspect of the present invention, there is provided a power supply device comprising: a first conductive line portion installed to connect a positive terminal of a power source and a positive terminal of a load; A second conductive line portion connected to the negative terminal of the power source and the negative terminal of the load; A third conductive line portion connecting the negative terminal of the power source and the negative terminal of the load and disposed adjacent to the first conductive line portion to form a first high frequency current path; And a fourth conductive line portion connecting the positive terminal of the power source and the positive terminal of the load and disposed adjacent to the second conductive line portion to form a second high frequency current path, Is provided.

Wherein the first conductive line portion and the third conductive line portion are opposite in current direction to cancel a parasitic inductance in the first high frequency current path and the second conductive line portion and the fourth conductive line portion have a current direction And can cancel the parasitic inductance in the second high-frequency current path.

The first conductive line portion and the second conductive line portion may be spaced apart from each other by a distance greater than a distance for excluding a current influence.

The third conductive line portion may have a conductive portion smaller in diameter than the first conductive line portion and the fourth conductive line portion may have a conductive portion smaller in diameter than the second conductive line portion.

According to another aspect of the present invention, there is provided a power supply apparatus including: a first wire having an extension length for connecting a first terminal of a positive terminal or an anode terminal to each other in each of a power source and a load, part; Wherein the first and second terminals are connected to the power source and the other end is connected to the load, and each of the power source and the load has an extension length for connecting the second terminal of the positive terminal or the negative terminal to each other, A second wire portion arranged to cancel a parasitic inductance in a high frequency current path with the first conductive portion; And a cover surrounding the first wire portion and the second wire portion.

The second wire portion may be smaller in diameter than the first wire portion.

According to another aspect of the present invention, there is provided a method of manufacturing a battery, comprising: connecting a positive terminal of a power source and a positive terminal of a load to one side and the other side of a first line; Connecting the negative terminal of the power source and the negative terminal of the load to one side and the other side of the second line; The negative terminal of the power source and the negative terminal of the load are connected to one side and the other side of the third line and the first high frequency current path is formed adjacent to the first line; And a step of connecting a positive terminal of the power source and a positive terminal of the load to one side and the other side of the fourth line and being disposed adjacent to the second line to form a second high frequency current path, A wire connection method is provided.

Wherein the step of forming the first high frequency current path includes the step of canceling the parasitic inductance in the first high frequency current path in which the first direction and the third direction are opposite to each other, The step of forming the high-frequency current path may include the step of canceling the parasitic inductance in the second high-frequency current path, wherein the second wire and the fourth wire are opposite in current direction.

According to the present invention, by providing the parasitic inductance attenuation portion adjacent to the conductive line portion connecting the power source and the load, when the high frequency band current flows due to the high-speed switching, the current directions are opposite to each other and the inductance in the high- And the total parasitic inductance is thereby effectively reduced.

1 is a view for explaining a general electric circuit device.
2 is an equivalent circuit of the electric circuit device shown in Fig.
3 is a view for explaining an electric circuit device for reducing parasitic inductance according to an embodiment of the present invention.
4 is an equivalent circuit of the electric circuit device shown in Fig.
5 is a view for explaining a current path in the equivalent circuit of FIG.
Fig. 6 is a diagram for explaining a current path in the equivalent circuit of Fig. 4;
7 is a diagram for comparing an electric circuit device for reducing parasitic inductance and a conventional electric circuit device according to an embodiment of the present invention.
8 is a view for explaining a low frequency current density distribution in the electric circuit device shown in FIG.
9 is a view for explaining the high frequency current density distribution in the electric circuit device shown in FIG.
10 is a graph showing a change in inductance according to frequency in an electric circuit device for reducing parasitic inductance according to an embodiment of the present invention.
11 is a view for explaining a power supply line for reducing parasitic inductance according to an embodiment of the present invention.
12 is a view for explaining a wire connection method for reducing parasitic inductance according to an embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

3 is a view for explaining an electric circuit device for reducing parasitic inductance according to an embodiment of the present invention.

3, an electric circuit device 100 for reducing parasitic inductance according to an embodiment of the present invention includes a first conductive line part 130 provided between a power source 110 and a load 120, 2 conductive line section 140, a third conductive line section 150, and a fourth conductive line section 160. [

The first conductive line unit 130 is installed to connect the positive terminal of the power source 110 and the positive terminal of the load 120. [ One side of the first conductive line unit 130 is connected to the positive terminal of the power source 110 and the other side is connected to the positive terminal of the load 120. [

The second conductive line unit 140 is installed to connect the negative terminal of the power source 110 and the negative terminal of the load 120. [ One side of the second conductive line portion 140 is connected to the negative terminal of the power source 110 and the other side is connected to the negative terminal of the load 120. [

The third conductive line unit 150 connects the negative terminal of the power source 110 and the negative terminal of the load 120 and is installed adjacent to the first conductive line unit 130. A high frequency current path is formed between the first conductive line portion 130 and the third conductive line portion 150. Here, the high-frequency current path means that a current path is formed when a current in a high frequency band flows. The current in the high frequency band can be generated when fast switching occurs in the load 120. [

The fourth conductive line unit 160 connects the positive terminal of the power source 110 and the positive terminal of the load 120 and is disposed adjacent to the second conductive line unit 140. A high frequency current path is formed between the second conductive line section 140 and the fourth conductive line section 160.

Since the first conductive line portion 130 and the third conductive line portion 150 are disposed adjacent to each other, the parasitic inductance in the high-frequency current path is canceled.

Likewise, since the second conductive line section 140 and the fourth conductive line section 160 are disposed adjacent to each other, parasitic inductance in the high-frequency current path is increased.

The first conductive line unit 130 and the third conductive line unit 150 are disposed adjacent to each other and the second conductive line unit 140 and the fourth conductive line unit 160 are disposed adjacent to each other. The distance between the first conductive line portion 130 and the second conductive line portion 140 is relatively close to the distance between them. Since the first conductive line unit 130 and the third conductive line unit 150 are disposed adjacent to each other and the second conductive line unit 140 and the fourth conductive line unit 160 are disposed adjacent to each other, So that parasitic inductance can be canceled in the high-frequency current path.

The first conductive line portion 130 and the second conductive line portion 140 are spaced apart from each other by a distance greater than or equal to a distance for excluding a current influence.

The third conductive line portion 150 may have a conductive portion smaller in diameter than the first conductive line portion 130. Likewise, the fourth conductive line portion 160 may have a conductive portion smaller in diameter than the second conductive line portion 140. However, the present invention is not limited thereto.

4 is an equivalent circuit of the electric circuit device shown in Fig.

Referring to FIG. 4, the first conductive line unit 130 of FIG. 3 may be represented by an equivalent circuit including a first resistor 130a and a first inductor 130b. The second conductive line portion 140 of FIG. 3 may be represented by an equivalent circuit including a second resistor 140a and a second inductor 140b. The third conductive line unit 150 of FIG. 3 may be represented by an equivalent circuit including a third resistor 150a and a third inductor 150b. The fourth conductive line portion 160 of FIG. 3 may be represented by an equivalent circuit including a fourth resistor 160a and a fourth inductor 160b.

The third conductive line portion 150 and the fourth conductive line portion 160 may be formed to have a conductive portion smaller in diameter than the first conductive line portion 130 and the second conductive line portion 140. The smaller the diameter of the conductive portion, the larger the resistivity becomes, and the parasitic inductance becomes larger. On the other hand, the parasitic inductance does not greatly affect the current flow in the low frequency band. However, in the high frequency band, the parasitic inductance becomes larger and the current to flow becomes better.

In the electric circuit device 100 including the first conductive line portion 130 to the fourth conductive line portion 160, current paths are formed differently in the low frequency band and the high frequency band.

The influence of the inductance component is small and the influence of the resistance component is large in the current flow in the low frequency band.

5, a first current path 1 including a power source 110, a first conductive line unit 130, a load 120, and a second conductive line unit 140 is formed in a low frequency band .

On the other hand, referring to FIG. 6, the influence of the inductance component is large and the influence of the resistance component is small in the current flow in the high frequency band. Therefore, in the high frequency band, the power source 110, the first conductive line unit 130, the load 120, the second current path 2 of the third conductive line unit 150, the power source 110, The third current path 3 of the line section 160, the load 120, and the second conductive line section 140 is formed.

In the second current path 2 in the high frequency band, the first conductive line portion 130 and the third conductive line portion 150 are disposed so that current directions are opposite to each other. Therefore, the parasitic inductance of the first conductive line portion 130 and the third conductive line portion 150 are canceled each other, so that the total inductance of the first conductive line portion 130 and the third conductive line portion 150 is reduced.

Likewise, in the third current path 3 in the high frequency band, the second conductive line portion 140 and the fourth conductive line portion 160 are disposed adjacent to each other with the directions of currents being opposite to each other. Therefore, the parasitic inductance of the second conductive line portion 140 and the fourth conductive line portion 160 are canceled each other, so that the total inductance of the first conductive line portion 130 and the third conductive line portion 150 is reduced.

7 is a diagram for comparing an electric circuit device for reducing parasitic inductance and a conventional electric circuit device according to an embodiment of the present invention.

7 (a) is an embodiment of the conventional electric circuit device 10 described in FIG. 1. FIG. 7 (b) is a cross-sectional view of the electric circuit device 100 ).

8 is a view for explaining a low frequency current density distribution in the electric circuit device shown in FIG.

8, in the low frequency band, the current density distribution shown in the conventional electric circuit device 10 shown in FIG. 8 (a) or the current density distribution shown in FIG. 8 (b) It can be seen that there is no significant difference in the current density distribution seen in the electric circuit device 100 according to the present invention.

9 is a view for explaining the high frequency current density distribution in the electric circuit device shown in FIG.

9, in the high frequency band, the current density distribution shown in the conventional electric circuit device 10 shown in FIG. 9A is different from the current density distribution shown in FIG. 9A in the first conductive line portion 13 and the second conductive line portion 14, .

Meanwhile, the current density distribution shown in the electric circuit device 100 according to the embodiment of the present invention shown in FIG. 9 (b) is different from the current density distribution shown in the third conductive line part 150 and the fourth conductive line part 160 It can be seen that it is concentrated. The parasitic inductance of the third conductive line portion 150 and the fourth conductive line portion 160 is smaller than the parasitic inductance of the first conductive line portion 130 and the second conductive line portion 140. As a current path is formed through the third conductive line portion 150 and the fourth conductive line portion 160 having a small parasitic inductance at the high frequency current, the first conductive line portion 130 and the second conductive line portion The total inductance of the current path is reduced compared to the current path formed of the current path 140.

10 is a graph showing a change in inductance according to frequency in an electric circuit device for reducing parasitic inductance according to an embodiment of the present invention.

10, reference numeral 101 in the graph denotes an inductance variation amount according to frequency in a conventional electric circuit device, and reference numeral 102 denotes an inductance variation amount according to frequency in an electric circuit device according to an embodiment of the present invention. Respectively.

As shown in the reference numeral 101, the amount of change in inductance in the conventional electric circuit device does not greatly differ in the low frequency band or the high frequency band. However, when the amount of change of the inductance in the electric circuit device according to the embodiment of the present invention is shown in the reference numeral 102, it can be seen that the inductance of the high frequency band is remarkably decreased as compared with the inductance of the low frequency band.

In other words, as for the inductance according to the frequency in the conventional electric circuit device denoted by reference numeral 101, the parasitic inductance having a frequency band of 60 Hz to 430 nH is 380 nH at a frequency of 1 MHz or more. On the contrary, the inductance variation according to the frequency in the electric circuit device according to the embodiment of the present invention shown in the reference numeral 102 is as follows: parasitic inductance, which was 350 nH at the frequency band of 60 Hz, is 310 nH or less at the frequency range of 100 Hz - To 120 nH, and it is confirmed that the frequency band is remarkably attenuated to 80 nH or lower at a frequency band higher than 1 MHz.

11 is a view for explaining a power supply line for reducing parasitic inductance according to an embodiment of the present invention.

11, a power supply line 200 for reducing parasitic inductance according to an exemplary embodiment of the present invention includes a first wire portion 210, a second wire portion 220, and a cover 230 Lt; / RTI >

One end of the first wire portion 210 is connected to the power source and the other end thereof is connected to the load. The first wire portion 210 may have an extension length for connecting the first terminal of the positive terminal or the negative terminal to each other in the power source and the load.

The second wire portion 220 has one end connected to the power source and the other end connected to the load. The second wire portion 220 has an extension length for connecting the second terminal of the positive terminal or the negative terminal to each other between the power source and the load, (210) and a high-frequency current path are formed.

The cover 230 surrounds the first wire portion 210 and the second wire portion 220 to perform insulation and protection functions.

Here, it is preferable that the diameter of the second wire portion 220 is smaller than that of the first wire portion 210. However, the present invention is not limited thereto.

3 can be realized by using the first wire portion 210 and the second wire portion 220 can be used to form the third conductive wire portion 130 shown in FIG. Lt; RTI ID = 0.0 > 150 < / RTI >

3 may be implemented using the first wire portion 210 and the second wire portion 220 may be used to form the fourth conductive wire portion 140 shown in FIG. Lt; RTI ID = 0.0 > 160 < / RTI >

12 is a view for explaining a wire connection method for reducing parasitic inductance according to an embodiment of the present invention.

Referring to FIG. 12, the positive terminal of the power source and the positive terminal of the load are connected to one side and the other side of the first wire (S1). Here, the first wire corresponds to the first conductive wire portion 130 described in FIG. 3, and may be embodied as the first wire portion 210, which has been described in detail with reference to FIG. However, the present invention is not limited thereto and various applications and modifications are possible.

The negative terminal of the power source and the negative terminal of the load are connected to one side and the other side of the second wire (S2). Here, the second wire corresponds to the second conductive wire portion 140 described in FIG. 3, and may be embodied as the second wire portion 220, which has been described in detail with reference to FIG. However, the present invention is not limited thereto and various applications and modifications are possible.

The negative terminal of the power source and the negative terminal of the load are connected to one side and the other side of the third wire (S3). Thus, a high-frequency current path is formed between the first wire and the third wire. Here, the third wire corresponds to the third conductive wire portion 150 described in FIG. 3, and may be embodied as the first wire portion 210, which has been described in detail with reference to FIG. However, the present invention is not limited thereto and various applications and modifications are possible. At this time, the third wire may be disposed adjacent to the first wire for offsetting the parasitic inductance at the first wire and the high-frequency current path.

The positive terminal of the power source and the positive terminal of the load are connected to one side and the other side of the fourth wire (S4). Thus, a high-frequency current path is formed between the second wire and the fourth wire. Here, the fourth wire corresponds to the fourth conductive wire portion 160 described in FIG. 3, and may be embodied as the second wire portion 220, which has been described in detail with reference to FIG. However, the present invention is not limited thereto and various applications and modifications are possible. At this time, the fourth wire may be disposed adjacent to the second wire for offsetting the parasitic inductance at the second wire and the high-frequency current path.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined by the following claims.

Claims (8)

A first conductive line portion installed to connect the positive terminal of the power source and the positive terminal of the load;
A second conductive line portion connected to the negative terminal of the power source and the negative terminal of the load;
A third conductive line portion connecting the negative terminal of the power source and the negative terminal of the load and disposed adjacent to the first conductive line portion to form a first high frequency current path; And
And a fourth conductive line portion connecting the positive terminal of the power source and the positive terminal of the load and disposed adjacent to the second conductive line portion to form a second high frequency current path.
The method according to claim 1,
Wherein the first conductive line portion and the third conductive line portion have opposite current directions and offset the parasitic inductance in the first high frequency current path,
Wherein the second conductive line portion and the fourth conductive line portion have opposite current directions and cancel parasitic inductance in the second high frequency current path.
The method according to claim 1,
Wherein the first conductive line portion and the second conductive line portion are spaced apart from each other by a distance greater than or equal to a distance for eliminating a current influence, thereby reducing parasitic inductance.
The method according to claim 1,
Wherein the third conductive line portion has a conductive portion smaller in diameter than the first conductive line portion and the fourth conductive line portion has a conductive portion smaller in diameter than the second conductive line portion.
A first wire portion having an extension length for connecting one of a positive terminal and a negative terminal of the power source and the load to each other;
Wherein the first and second terminals are connected to the power source and the other end is connected to the load, and each of the power source and the load has an extension length for connecting the second terminal of the positive terminal or the negative terminal to each other, A second wire portion arranged to cancel a parasitic inductance in a high frequency current path with the first conductive portion; And
And a cover surrounding the first wire portion and the second wire portion.
6. The method of claim 5,
And the second wire portion has a smaller diameter than the first wire portion.
Connecting the positive terminal of the power source and the positive terminal of the load to one side and the other side of the first line;
Connecting the negative terminal of the power source and the negative terminal of the load to one side and the other side of the second line;
The negative terminal of the power source and the negative terminal of the load are connected to one side and the other side of the third line and the first high frequency current path is formed adjacent to the first line; And
Wherein a positive terminal of the power source and a positive terminal of the load are connected to one side and the other side of a fourth line and a second high frequency current path is formed adjacent to the second line to reduce parasitic inductance, Connection method.
8. The method of claim 7,
The step of forming the first high-frequency current path includes:
Wherein the first wire and the third wire are opposite in current direction and offset the parasitic inductance in the first high frequency current path,
The step of forming the second high-frequency current path includes:
Wherein the second wire and the fourth wire are opposite in current direction and canceling the parasitic inductance in the second high frequency current path.
KR1020150175278A 2015-12-09 2015-12-09 electrical circuit apparatus for reduction of parasitic inductance, electrical wire for supplying power soure therefor and method for connecting the electrical wire KR20170068273A (en)

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KR1020150175278A KR20170068273A (en) 2015-12-09 2015-12-09 electrical circuit apparatus for reduction of parasitic inductance, electrical wire for supplying power soure therefor and method for connecting the electrical wire

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021040152A1 (en) * 2019-08-30 2021-03-04 한양대학교 산학협력단 Laminated circuit structure for reducing parasitic inductance
WO2024053006A1 (en) * 2022-09-07 2024-03-14 三菱電機株式会社 Outdoor unit for air conditioner

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021040152A1 (en) * 2019-08-30 2021-03-04 한양대학교 산학협력단 Laminated circuit structure for reducing parasitic inductance
WO2024053006A1 (en) * 2022-09-07 2024-03-14 三菱電機株式会社 Outdoor unit for air conditioner

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