KR20170055252A - Force touch sensor and method for manufacturing the same - Google Patents

Abstract

The present invention relates to a force touch sensor and a manufacturing method thereof. More specifically, the present invention relates to a force touch sensor which comprises: a pair of substrates facing each other; a dielectric layer included between the pair of substrates; and conductive nanopartitions respectively protruded from surfaces facing the pair of substrates. Therefore, the force touch sensor has excellent light transmittance and force sensitivity.

Description

TECHNICAL FIELD [0001] The present invention relates to a force sensor and a method of manufacturing the force sensor.

The present invention relates to a force-touch sensor and a method of manufacturing the same.

A touch technology in which a user can input a signal by touching a finger directly on the surface of a display device displaying a predetermined image is widely applied. Such a technology can be used in various electronic and communication devices such as a notebook computer, a personal digital assistant (PDA), a game machine, a smart phone, and a navigation system, and can be used to select or input functions desired by a user.

An example of a touch input technology used in a cellular phone is a capacitive touch panel in which electrodes are formed on the upper and lower surfaces of a glass substrate to detect only the position of a touch point. Such a touch input technique is advantageous in that it can provide a clear screen because the light emitted from the liquid crystal panel is not an obstacle to the user and is not harmful to the appearance of a mobile phone. However, There is a disadvantage in that the capacitance is not changed and the input is not applied.

Such a conventional touch input technique can only acquire the position of a multi-touch, but can not detect the intensity of the pressing force. Accordingly, a touch sensor which exhibits a high force sensing sensitivity to the finger touch and a good light transmittance is required.

Korean Patent Laid-Open No. 10-2010-0084487 discloses a touch panel comprising: a transparent panel-shaped touch panel which is disposed at a predetermined distance in parallel with a display surface of a visual display device, The touch panel is positioned between the display surface and the touch panel so as to keep the distance between the display surface and the touch panel parallel to each other, A plurality of pressure sensing sensors; A controller for analyzing a magnitude of a pressure acting on each of the pressure sensors based on the plurality of pressure detection signals outputted and for detecting a contact position of a finger which is in contact with the touch panel on the basis of the magnitude of each of the analyzed pressures An inexpensive construction that does not use a complicated matrix electrode pattern structure of a transparent material such as ITO for sensing the touch of a user's finger is provided, And a technique for measuring a contact point.

However, even with such a technique, there may be a limit in improving the transmittance and sensitivity of light required for the sensor.

Korean Patent Publication No. 10-2010-0084487

SUMMARY OF THE INVENTION It is an object of the present invention to provide a touch sensor in which the transmittance of light and the sensitivity of force are improved by including a conductive nano barrier rib pattern having a nano size level.

It is another object of the present invention to provide a manufacturing method capable of manufacturing a force touch sensor with improved light transmittance and sensitivity.

1. A plasma display panel comprising: a pair of opposed substrates;

A dielectric layer included between the pair of substrates; And

And a conductive nano barrier wall protruding from an opposing surface of the pair of substrates, respectively.

2. The force touch sensor according to 1 above, wherein the conductive nano barrier wall has a thickness of 5 to 200 nm.

3. The force touch sensor of claim 1, wherein the height of the conductive nano barrier is 500 to 2,000 nm.

4. The force touch sensor of 1 above, wherein the conductive nano barrier wall has a predetermined pattern.

5. The method of claim 4, wherein the pattern is a linear pattern; Lattice pattern; Or the opening is an opening pattern having a circular shape, an elliptical shape, a triangular shape, a square shape, a pentagon shape, a hexagonal shape, an octagonal shape, or a shape of a combined shape thereof.

6. The force touch sensor according to claim 4, wherein the patterns of the pair of substrates are arranged so as to be shifted without facing each other.

7. The force touch sensor as in 1 above, wherein said nano barrier wall is at least partly between said partitions on the substrate.

8. The force touch sensor of claim 1, further comprising a polymer pattern at least in part between the nano barrier walls.

9. The force touch sensor of claim 1, further comprising a spacer on the substrate between the conductive nano barrier walls.

10. A method of manufacturing a semiconductor device, comprising: forming a conductive layer on a first substrate and a second substrate;

Forming a polymer pattern on the conductive layer;

Etching the exposed conductive layer by ion milling and forming a nano-thick coating layer on the side of the polymer pattern to form a nano barrier wall;

Attaching the first substrate and the second substrate such that the surfaces on which the conductive nano barrier walls are formed face each other; And

And forming a dielectric layer between the first substrate and the second substrate.

11. A method comprising: forming a polymer pattern on a first substrate and a second substrate;

Forming a conductive layer on the first substrate and the second substrate on which the polymer pattern is formed;

Etching the conductive layer by an ion milling method and forming a nano-thick coating layer on a side surface of the polymer pattern to form a nano barrier wall;

Attaching the first substrate and the second substrate such that the surfaces on which the conductive nano barrier walls are formed face each other; And

And forming a dielectric layer between the first substrate and the second substrate.

12. The polymer of claim 10 or 11, wherein the polymer pattern is a linear pattern; Lattice pattern; Or an opening pattern having a circular shape, an elliptical shape, a triangular shape, a square shape, a pentagon shape, a hexagonal shape, an octagonal shape, or a shape of a figure in which these shapes are combined.

13. The method of manufacturing a force touch sensor according to claim 10 or 11, wherein the conductive nano barrier walls of both substrates have a predetermined pattern, and the nano barrier rib patterns of the first substrate and the second substrate are formed to be shifted without facing each other.

14 according to the above 10 or 11, wherein the ion milling method is ^{10- 5} Torr to 10 ^- The method of producing a force touch sensor to a plasma under a pressure of ³ Torr is performed by accelerated 100ev to 1500eV.

15. The manufacturing method of a force touch sensor according to claim 10 or 11, wherein the coating layer is formed by attaching conductive particles separated from the conductive layer by the ion milling method to a side surface of the polymer pattern.

16. The method of manufacturing a force touch sensor according to claim 10 or 11, wherein the conductive nano barrier wall has a thickness of 5 to 200 nm.

17. The method of manufacturing a force touch sensor according to claim 10 or 11, wherein the height of the partition is 50 to 2,000 nm.

18. The method of manufacturing a force touch sensor according to claim 10 or 11, further comprising removing the polymer pattern.

19. The method of claim 10, further comprising forming a transparent conductive layer on the substrate prior to forming the conductive layer.

20. The method of manufacturing a force touch sensor according to claim 11, further comprising forming a transparent conductive layer on the substrate before forming the polymer pattern.

21. The method of claim 10 or 11, further comprising forming spacers on the substrate between the conductive nano barrier walls prior to formation of the dielectric layer.

22. An image display device comprising a force touch sensor according to any one of items 1 to 9 above.

The force touch sensor manufactured by the method of manufacturing a force touch sensor according to the present invention can have excellent light transmittance and force sensing sensitivity.

Since the force touch sensor of the present invention includes a conductive nano barrier wall pattern having a nano size level, a range around a touched point can be small, and a touched point on the device can be grasped precisely.

The force touch sensor of the present invention includes a conductive nano barrier wall pattern having a nano-sized level, so that interference in touch point recognition may be small.

The force touch sensor of the present invention includes a conductive nano barrier wall pattern having a nano-sized level, thereby minimizing a decrease in light transmittance.

The force touch sensor manufactured by the method of manufacturing a force touch sensor according to the present invention can have excellent light transmittance and force sensing sensitivity.

1 is a schematic perspective view illustrating a substrate having a nano barrier wall formed in a force touch sensor according to an embodiment of the present invention.
2 is a schematic perspective view illustrating a substrate on which a nano barrier wall is formed in a force touch sensor according to an embodiment of the present invention.
3 is a schematic perspective view illustrating a substrate on which a nano barrier wall is formed in a force touch sensor according to an embodiment of the present invention.
4 is a schematic process diagram illustrating a method of forming a nano barrier on a substrate in a method of manufacturing a force touch sensor according to an embodiment of the present invention.
5 is a schematic process diagram illustrating a method of forming a nano barrier wall on a substrate in a method of manufacturing a force-touch sensor according to another embodiment of the present invention.
6 (a) is a schematic vertical cross-sectional view of a force touch sensor according to an embodiment of the present invention.
6 (b) is a schematic vertical cross-sectional view of a force touch sensor according to another embodiment of the present invention.
7 is a schematic vertical cross-sectional view of a force touch sensor according to another embodiment of the present invention.

One embodiment of the present invention is a semiconductor device comprising: a pair of opposing substrates; A dielectric layer included between the pair of substrates; And a conductive nano barrier wall protruding from an opposing surface of the pair of substrates, respectively, thereby providing a force touch sensor having excellent light transmittance and force sensing sensitivity.

Hereinafter, specific embodiments of the present invention will be described with reference to the drawings. However, this is merely an example and the present invention is not limited thereto.

The force touch sensor of the present invention comprises a pair of opposed substrates 100; A dielectric layer 500 between the pair of substrates 100; And conductive nano barrier ribs 200 protruding from opposite surfaces of the pair of substrates 100, respectively.

The supporting substrate 100 is not particularly limited as long as it has transparency and appropriate strength and may be made of a material such as silicon, quartz, glass, polymer, metal, metal oxide, non-metal oxide, cycloolefin such as norbornene or polycyclic norbornene monomers Cyclohexanecarboxylic acid, cyclohexanecarboxylic acid, cyclohexanedicarboxylic acid, cyclohexanedicarboxylic acid, cyclohexanedicarboxylic acid, cyclohexanedicarboxylic acid, cyclohexanedicarboxylic acid, cyclohexanedicarboxylic acid, But are not limited to, vinyl acetate copolymer, polyester, polystyrene, polyamide, polyether imide, polyacryl, polyimide, polyether sulfone, polysulfone, polyethylene, polypropylene, polymethylpentene, polyvinyl chloride, polyvinylidene chloride, Alcohol, polyvinyl acetal, A substrate 100 including a material such as polyether ketone, polyether ether ketone, polyether sulfone, polymethyl methacrylate, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycarbonate, polyurethane, Lt; / RTI > These materials may be used alone or in combination of two or more.

The thickness of the support substrate 100 is not particularly limited, and may be, for example, from 10 탆 to 500 탆.

As illustrated in FIG. 1, the conductive nano barrier ribs 200 are located on the substrate 100.

The conductive nano barrier rib 200 is made of a conductive material and is made of a conductive material such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, , At least one metal selected from the group consisting of Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi; Or indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), flintine tin oxide (FTO) (IZTO-Ag-IZO), indium zinc tin oxide (IZTO-Ag-IZTO) and aluminum zinc oxide (ITO-Ag-ITO), indium zinc oxide-silver-indium zinc oxide - silver-aluminum zinc oxide (AZO-Ag-AZO), and the like can be used.

The thickness of the conductive nano barrier rib 200 is not particularly limited as long as the electrical conductivity is improved, the light transmittance reduction is minimized, and the force sensing sensitivity is improved. For example, the thickness may be 5 to 200 nm, Preferably 5 to 100 nm, more preferably 5 to 50 nm, and most preferably 10 to 30 nm. If the thickness is less than 5 nm, there may be a problem in conductivity and durability. If the thickness is more than 200 nm, the transmittance may be lowered.

The height of the conductive nano barrier ribs 200 is not particularly limited as long as it can exhibit sufficient electrical conductivity and an improvement in sensitivity of force sensing, and may be, for example, 500 nm to 2,000 nm. If the height is less than 500 nm, the sensitivity of the force sensing may be deteriorated. If the height is more than 2,000 nm, durability deterioration, short-circuiting, increase of visibility of the pattern may occur.

The nano barrier ribs 200 can be positioned alone or as a plurality of walls.

The plurality of walls may not be in parallel, but may be positioned so that they meet each other or their extension lines meet each other.

The conductive nano barrier ribs 200 may be such that at least a part of the spaces between the barrier ribs are connected to each other on the substrate 100 as illustrated in Fig. In such a case, the electric conductivity can be further improved. FIG. 4 (f) also shows a case where at least a part of the space between the conductive nano barrier ribs 200 having the opening pattern of the hexagonal opening portion is mutually connected on the substrate 100.

The conductive nano barrier rib 200 may have a predetermined pattern. For example, as the opening pattern, the opening may have a polygonal shape such as a circle, an ellipse, a triangle, a rectangle, a pentagon, a hexagon, an octagon, or the like and may be a linear pattern, a mesh pattern, a zigzag, a spiral, A single closed curve or the like. 3 shows an example of the opening pattern having a hexagonal opening, but the present invention is not limited thereto.

The opening pattern is a pattern having an opening portion surrounded by the nano barrier walls, and the opening pattern may be positioned singly or in plurality.

When a plurality of opening patterns are located, each opening pattern may be located at regular or irregular intervals. Further, the plurality of opening patterns may be connected to each other or spaced apart from each other, and may be linearly symmetrical, point symmetrical, or irregularly positioned.

The opening pattern is a shape in which the opening has the above-mentioned figure shape; A shape in which the illustrated figures are combined; Or a shape in which at least one of these graphic forms is mixed, the openings may be arranged periodically or aperiodically.

The patterns of the conductive nano barrier ribs 200 formed on the pair of substrates 100 may be arranged so as to face each other or may be arranged to be shifted without facing each other. Fig. 6 illustrates a case where the patterns are arranged so as to be shifted. When the conductive nano barrier ribs 200 of the pair of substrates 100 are arranged so as to be offset from each other, the sensing sensitivity can be more excellent. 7 is a vertical cross-sectional view schematically showing a state in which a force is applied from the outside of the sensor when the conductive nano barrier ribs 200 are arranged so that the patterns are shifted from each other.

The force touch sensor according to an embodiment of the present invention may further include a polymer pattern 420 in at least a part of the conductive nano barrier walls 200.

As the polymer pattern 420, any polymeric resin known in the art can be used without limitation, for example, epoxy polymer, cellulose polymer, , A polyester resin, or the like. These may be used alone or in combination of two or more.

The force touch sensor of the present invention may further include a transparent conductive layer (not shown) positioned between the substrate 100 and the conductive nano barrier rib 200.

The transparent conductive layer serves to further improve the electric conductivity.

The transparent conductive layer may be formed of at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), flintine oxide (FTO) Indium zinc oxide (IZO-Ag-IZO), indium zinc tin oxide-silver-indium zinc tin oxide (IZTO-Ag-IZTO), indium zinc oxide Metal oxides such as aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO); Carbon-based materials such as carbon nanotubes (CNT) and graphene; , Poly (3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), and the like. These may be used alone or in combination of two or more.

The dielectric layer 500 according to the present invention may be included between a pair of opposing substrates 100.

When the user presses the force touch sensor, the distance between the conductive nano barrier walls 200 included in both the substrates 100 is changed. By including the dielectric material between the substrates 100, a capacitance change is generated. It can detect what is applied and its size.

The dielectric forming the dielectric layer 500 can be used without any particular limitation if the force touch sensor can detect the magnitude of the force and is not an obstacle. For example, polyurethane, gel, gel, silicone and PDMS (polydimethylsiloxane) polymers.

The dielectric layer 500 may also be a layer having an adhesive force such that the pair of substrates 100 are not separated from each other.

If necessary, a spacer (not shown) may be further provided on the substrate 100 between the conductive nano barrier ribs 200 to maintain the spacing of the substrate 100. The spacing, spacing, size, shape, etc. of the spacers can be maintained without disturbing the substrate 100 and without limiting the light transmittance and force sensing sensitivity of the force touch electrode.

Further, the present invention provides an image display apparatus including the force touch sensor.

The force touch sensor of the present invention is applicable not only to a general liquid crystal display but also to various image display devices such as an electroluminescence display, a plasma display, and a field emission display.

The present invention also provides a method of manufacturing the force touch sensor.

4 and 6A, a method of manufacturing a force touch sensor according to an embodiment of the present invention includes forming a conductive layer 300 on a first substrate 110 and a second substrate 120 step; Forming a polymer pattern (420) on the conductive layer (300); Etching the exposed conductive layer 300 by ion milling and forming a nano-thick coating layer on the side of the polymer pattern 420 to form a nano barrier wall; Attaching the first substrate (110) and the second substrate (120) so that the surfaces on which the conductive nano barrier walls (200) are formed face each other; And forming a dielectric layer (500) between the first substrate (110) and the second substrate (120).

The first and second sides of the first substrate 110 and the second substrate 120 are used to distinguish between the opposing substrates 100. The first substrate 110 and the second substrate 120 ) Are all included in the substrate 100.

Referring to FIG. 4, a process of forming the conductive nano barrier rib 200 pattern on one substrate 100 is schematically shown.

First, a conductive layer 300 is formed on a substrate 100 as shown in FIG. 4 (b).

The method of forming the conductive layer 300 is not particularly limited and may be selected from a physical vapor deposition method, a chemical vapor deposition method, a plasma deposition method, a plasma polymerization method, a thermal polymerization method, a thermal deposition method, a thermal oxidation method, an anodic oxidation method, a cluster ion beam deposition method, A printing method, an offset printing method, an inkjet coating method, a dispenser printing method, and a photolithography method.

As the conductive material used for the conductive layer 300, for example, In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, , At least one metal selected from the group consisting of Cr, Mo, Nb, Al, Ni, Cu, and WTi; Or indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), flintine tin oxide (FTO) (IZTO-Ag-IZO), indium zinc tin oxide (IZTO-Ag-IZTO) and aluminum zinc oxide (ITO-Ag-ITO), indium zinc oxide-silver-indium zinc oxide - silver-aluminum zinc oxide (AZO-Ag-AZO), and the like, but the present invention is not limited thereto.

When the conductive layer 300 is formed before the formation of the polymer pattern 420, the conductive layer 300 is present under the polymer pattern 420. The conductive nano barriers 200 are connected to each other on the substrate 100 by the conductive layer 300. The conductive nano barrier ribs 200 are formed on the conductive nano barrier ribs 200 by a process described later. Thus, the electrical conductivity can be improved.

4 (c) and 4 (d), a polymer pattern 420 is formed on the conductive layer 300.

The polymer pattern 420 may be formed by forming a polymer resin layer 410 on the conductive layer 300 and patterning the polymer resin layer 410.

As the polymer resin layer 410, polymer resins known in the art can be used without limitation, and examples thereof include epoxy resins, cellulose resins, acrylic resins, vinyl chloride resins, vinyl acetate resins, polyvinyl alcohol resins, polyurethane resins, poly Ester-based polymer resin. These may be used alone or in combination of two or more.

The method of patterning the polymer resin layer 410 is not particularly limited and may be any one of a screen printing method, a gravure printing method, a flexo printing method, an offset printing method, an inkjet coating method, a dispenser printing method, a photolithography method, And the like can be used.

The polymer pattern 420 may be formed such that the conductive nano barrier wall 200 to be formed along the outer peripheral surface of the polymer pattern 420 after forming the polymer pattern 420 in the manufacturing process according to the present embodiment has a predetermined opening pattern A shape corresponding to the shape of the predetermined opening pattern may be formed.

For example, as the opening pattern, the opening may have a polygonal shape such as a circle, an ellipse, a triangle, a rectangle, a pentagon, a hexagon, an octagon, or the like and may be a linear pattern, a mesh pattern, a zigzag, a spiral, A single closed curve or the like. 3 shows an example of the opening pattern having a hexagonal opening, but the present invention is not limited thereto.

The opening pattern is a pattern having an opening portion surrounded by the nano barrier walls, and the opening pattern may be positioned singly or in plurality.

When a plurality of opening patterns are located, each opening pattern may be located at regular or irregular intervals. Further, the plurality of opening patterns may be connected to each other or spaced apart from each other, and may be linearly symmetrical, point symmetrical, or irregularly positioned.

The opening pattern is a shape in which the opening has the above-mentioned figure shape; A shape in which the illustrated figures are combined; Or a shape in which at least one of these graphic forms is mixed, the openings may be arranged periodically or aperiodically.

6, the polymer patterns 420 may be formed such that the conductive nano barrier ribs 200 formed on both substrates 100, which will be described later, are staggered without facing each other.

The patterning may be performed such that the conductive layer 300 at the patterning site is exposed so that the conductive layer 300 is easily etched.

Meanwhile, the height of the nano-thick coating layer and the conductive nano barrier rib 200 described below can be adjusted through the design of the height of the polymer resin layer 410.

4 (e), the conductive layer 300 exposed between the polymer patterns 420 is etched by ion milling to form a nano-thick coating layer on the side surface of the polymer pattern 420. Next, as shown in FIG.

The ion milling method is a method of physically etching the conductive layer 300 by irradiating an ion beam, and accelerates ions with a voltage difference to apply a physical impact to the conductive layer 300. The metal particles are torn off and adhere to the side surface of the polymer pattern 420, so that a nano-thick coating layer can be formed on the side of the polymer pattern 420.

A nano-thick coating layer corresponds to the nano barrier rib 200.

The gas used for ion formation may be, for example, argon, helium, nitrogen, hydrogen, oxygen or a mixture thereof, preferably argon.

Ion milling conditions are not particularly limited, for example, ^10-1 form a plasma in the gas under the pressure ⁵ Torr to 10 ^-3 Torr can then be accomplished by accelerating the plasma by 100eV ~ 1500eV. If the energy is less than 100 eV, etching of the conductive layer 300 may be difficult. If the energy exceeds 1500 eV, the polymer pattern 420 may be damaged, and thus the conductive nano barrier rib 200 may be difficult to generate.

The thickness, height, and the like of the nano barrier rib 200 may be formed as described above, so that a description thereof will be omitted.

The thickness of the nano barrier rib 200 may be controlled by varying the material, thickness and energy (eV) of the etch target layer 300, but is not limited thereto.

If necessary, the method of manufacturing a force touch sensor according to an embodiment of the present invention may further include removing the polymer pattern 420 as shown in FIG. 4F.

If necessary, the method of manufacturing a force touch sensor of the present invention may further include forming a transparent conductive layer (not shown) on the substrate 100 before forming the conductive layer 300.

When the transparent conductive layer is formed, the electric conductivity can be further improved.

The transparent conductive layer may be formed of at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), flintine oxide (FTO) Indium zinc oxide (IZO-Ag-IZO), indium zinc tin oxide-silver-indium zinc tin oxide (IZTO-Ag-IZTO), indium zinc oxide Metal oxides such as aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO); Carbon-based materials such as carbon nanotubes (CNT) and graphene; , Poly (3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), and the like. These may be used alone or in combination of two or more.

The first substrate 110 and the second substrate 120 are attached to each other such that the surfaces on which the conductive nano barrier ribs 200 are formed are opposed to the first substrate 110 and the second substrate 120, .

The attachment method can be performed by a method known in the art. For example, an adhesive, an adhesive tape, a sealant or the like, but is not limited thereto.

Thereafter, a dielectric layer 500 is formed between the first substrate 110 and the second substrate 120.

The dielectric can be used without any particular limitation as long as the force touch sensor does not interfere with the sensing of the magnitude of the force, as described above. For example, polyurethane, gel, gel, silicone, and PDMS (polydimethylsiloxane) polymers can be cited. These may be used alone or in combination of two or more.

The dielectric layer 500 may be formed by dispersing and coating a dielectric material on a substrate 100 on which a conductive nano barrier wall 200 is formed before attachment of the first substrate 110 and the second substrate 120, , But the present invention is not limited thereto.

The dielectric layer 500 may further include a solvent or a polymeric resin in which a dielectric is dispersed between the first substrate 110 and the second substrate 120 after attaching the first substrate 110 and the second substrate 120 May be formed by implantation.

The dielectric layer 500 may also be an adhesive layer so that the first substrate 110 and the second substrate 120 are not separated from each other.

A spacer (not shown) may be disposed on the substrate 100 between the conductive nano barriers 200, if necessary, to maintain the distance between the substrates 100 before forming the dielectric layer 500 can do.

The spacing, spacing, size, shape, etc. of the spacers can be maintained without disturbing the substrate 100 and without limiting the light transmittance and force sensing sensitivity of the force touch electrode.

The method of forming the transparent conductive layer is not particularly limited, and the methods exemplified by the method of forming the conductive layer 300 can be used.

In addition, the present invention provides a method of manufacturing a force-touch sensor according to another embodiment.

5A and 6B, a method of manufacturing a force touch sensor according to another embodiment of the present invention includes forming a polymer pattern 420 on a first substrate 110 and a second substrate 120 ; Forming a conductive layer (300) on the first substrate (110) and the second substrate (120) on which the polymer pattern (420) is formed; Etching the conductive layer 300 by ion milling and forming a nano-thick coating layer on the side surface of the polymer pattern 420 to form a nano barrier wall; Attaching the first substrate (110) and the second substrate (120) so that the surfaces on which the conductive nano barrier walls (200) are formed face each other; And forming a dielectric layer (500) between the first substrate (110) and the second substrate (120). 5, a process of forming the conductive nano barrier ribs 200 on one substrate 100 is schematically shown.

First, a polymer pattern 420 is formed on a substrate 100 as shown in FIG. 5 (a).

The polymer pattern 420 may be formed by forming a polymer resin layer 410 on the substrate 100 and patterning the same.

As the polymer resin layer 410, polymer resins known in the art can be used without limitation, and examples thereof include epoxy resins, cellulose resins, acrylic resins, vinyl chloride resins, vinyl acetate resins, polyvinyl alcohol resins, polyurethane resins, poly Ester-based polymer resin. These may be used alone or in combination of two or more.

The method of patterning the polymer resin layer 410 is not particularly limited and may be any one of a screen printing method, a gravure printing method, a flexo printing method, an offset printing method, an inkjet coating method, a dispenser printing method, a photolithography method, And the like can be used.

The polymer pattern 420 may be formed such that the conductive nano barrier wall 200 to be formed along the outer peripheral surface of the polymer pattern 420 after forming the polymer pattern 420 in the manufacturing process according to the present embodiment has a predetermined opening pattern A shape corresponding to the shape of the predetermined opening pattern may be formed.

For example, as the opening pattern, the opening may have a polygonal shape such as a circle, an ellipse, a triangle, a rectangle, a pentagon, a hexagon, an octagon, or the like and may be a linear pattern, a mesh pattern, a zigzag, a spiral, A single closed curve or the like. 3 shows an example of the opening pattern having a hexagonal opening, but the present invention is not limited thereto.

The opening pattern is a pattern having an opening portion surrounded by the nano barrier walls, and the opening pattern may be positioned singly or in plurality.

When a plurality of opening patterns are located, each opening pattern may be located at regular or irregular intervals. Further, the plurality of opening patterns may be connected to each other or spaced apart from each other, and may be linearly symmetrical, point symmetrical, or irregularly positioned.

The opening pattern is a shape in which the opening has the above-mentioned figure shape; A shape in which the illustrated figures are combined; Or a shape in which at least one of these graphic forms is mixed, the openings may be arranged periodically or aperiodically.

6, the polymer patterns 420 may be formed such that the conductive nano barrier ribs 200 formed on both substrates 100, which will be described later, are staggered without facing each other.

Meanwhile, the height of the nano-thick coating layer and the conductive nano barrier rib 200 described below can be adjusted through the design of the height of the polymer resin layer 410.

5 (b), the conductive layer 300 is formed on the substrate 100 having the polymer pattern 420 formed thereon.

The conductive layer 300 may be formed of a conductive material such as one or more of the above-mentioned metals or one or more metal oxides and may be formed by a physical vapor deposition method, a chemical vapor deposition method, a plasma deposition method, a plasma polymerization method, a thermal deposition method, a thermal oxidation method, For example, a screen printing method, a gravure printing method, a flexo printing method, an offset printing method, an inkjet coating method, a dispenser printing method, or a photolithography method.

5 (c), the conductive layer 300 is etched by ion milling to form a nano-thick coating layer on the side of the polymer pattern 420.

The gas used for ion formation may be, for example, argon, helium, nitrogen, hydrogen, oxygen or a mixture thereof, preferably argon.

Ion milling conditions are not particularly limited, for example, ^10-1 form a plasma in the gas under the pressure ⁵ Torr to 10 ^-3 Torr can then be accomplished by accelerating the plasma by 100eV ~ 1500eV. If the energy is less than 100 eV, etching of the conductive layer 300 may be difficult. If the energy exceeds 1500 eV, the polymer pattern 420 may be damaged, and thus the conductive nano barrier rib 200 may be difficult to generate.

If necessary, in the method of manufacturing a force touch sensor according to an embodiment of the present invention, only the conductive nano barrier rib 200 formed on the side of the polymer pattern 420 may be left by removing the polymer pattern 420 as shown in FIG. 5 (d). 5 (d) is a cross-sectional view along the line A-A 'in FIG.

The thickness of the conductive nano barrier rib 200 is not particularly limited as long as it is within a range capable of achieving the improvement of the electrical conductivity, the minimization of the transmittance reduction, and the improvement of the sense of force sensing. For example, the thickness may be 5 to 200 nm, 5 to 100 nm, more preferably 5 to 50 nm, and most preferably 10 to 30 nm. If the thickness is less than 5 nm, there may be a problem in conductivity and durability. If the thickness is more than 200 nm, the light transmittance may be lowered.

The height of the conductive nano barrier ribs 200 is not particularly limited as long as it can exhibit sufficient electrical conductivity and an improvement in sensitivity of force sensing, and may be, for example, 500 nm to 2,000 nm. If the thickness is less than 500 nm, the degree of improvement of the force sensing sensitivity may be insignificant. If the thickness is more than 2,000 nm, there may occur problems such as decrease in durability of the force touch sensor and increase in visibility of the pattern due to an excessive gap.

The first substrate 110 and the second substrate 120 are attached to each other such that the surfaces on which the conductive nano barrier ribs 200 are formed are opposed to the first substrate 110 and the second substrate 120, .

The attachment method can be performed by a method known in the art. For example, an adhesive, an adhesive tape, a sealant or the like, but is not limited thereto.

A dielectric layer (500) is formed between the first substrate (110) and the second substrate (120).

The dielectric can be used without any particular limitations as long as the force sensor can detect the magnitude of the force as described above. For example, polyurethane, gel, gel, silicone, and PDMS (polydimethylsiloxane) polymers can be cited. These may be used alone or in combination of two or more.

The dielectric layer 500 may be formed by dispersing and coating a dielectric material on a substrate 100 on which a conductive nano barrier wall 200 is formed before attachment of the first substrate 110 and the second substrate 120, , But the present invention is not limited thereto.

The dielectric layer 500 may further include a solvent or a polymeric resin in which a dielectric is dispersed between the first substrate 110 and the second substrate 120 after attaching the first substrate 110 and the second substrate 120 May be formed by implantation.

The dielectric layer 500 may also be an adhesive layer so that the first substrate 110 and the second substrate 120 are not separated from each other.

If necessary, the method of manufacturing a force touch sensor of the present invention may further include forming a transparent conductive layer (not shown) on the substrate 100 before forming the polymer pattern 420.

When the transparent conductive layer is formed, the electric conductivity can be further improved.

The transparent conductive layer may be formed of at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), flintine oxide (FTO) Indium zinc oxide (IZO-Ag-IZO), indium zinc tin oxide-silver-indium zinc tin oxide (IZTO-Ag-IZTO), indium zinc oxide Metal oxides such as aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO); Carbon-based materials such as carbon nanotubes (CNT) and graphene; , Poly (3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), and the like. These may be used alone or in combination of two or more.

The method of forming the transparent conductive layer is not particularly limited, and the methods exemplified by the method of forming the conductive layer 300 can be used.

A spacer (not shown) may be disposed on the substrate 100 between the conductive nano barriers 200, if necessary, to maintain the distance between the substrates 100 before forming the dielectric layer 500 can do.

The spacing, spacing, size, shape, etc. of the spacers can be maintained without disturbing the substrate 100 and without limiting the light transmittance and force sensing sensitivity of the force touch electrode.

100: substrate
110: first substrate
120: second substrate
200: conductive nano barrier
300: conductive layer
410: polymer resin layer
420: Polymer pattern
500: dielectric layer

Claims (22)

A pair of opposed substrates;
A dielectric layer included between the pair of substrates; And
And a conductive nano barrier wall protruding from an opposing surface of the pair of substrates, respectively.
The force touch sensor of claim 1, wherein the thickness of the conductive nano barrier is 5 to 200 nm.
The force touch sensor of claim 1, wherein the height of the conductive nano barrier is 500 to 2,000 nm.
The force touch sensor of claim 1, wherein the conductive nano barrier wall has a predetermined pattern.
5. The method of claim 4, wherein the pattern comprises a linear pattern; Lattice pattern; Or the opening is an opening pattern having a circular shape, an elliptical shape, a triangular shape, a square shape, a pentagon shape, a hexagonal shape, an octagonal shape, or a shape of a combined shape thereof.
The force touch sensor according to claim 4, wherein the patterns of the pair of substrates are arranged so as to be shifted without facing each other.
The force touch sensor of claim 1, wherein the nano barrier walls are at least partially between the partitions on the substrate.
The force touch sensor of claim 1, further comprising a polymer pattern at least in part between the nano barrier walls.
The force touch sensor of claim 1, further comprising spacers on the substrate between the conductive nano barrier walls.
Forming a conductive layer on the first substrate and the second substrate;
Forming a polymer pattern on the conductive layer;
Etching the exposed conductive layer by ion milling and forming a nano-thick coating layer on the side of the polymer pattern to form a nano barrier wall;
Attaching the first substrate and the second substrate such that the surfaces on which the conductive nano barrier walls are formed face each other; And
And forming a dielectric layer between the first substrate and the second substrate.
Forming a polymer pattern on the first substrate and the second substrate;
Forming a conductive layer on the first substrate and the second substrate on which the polymer pattern is formed;
Etching the conductive layer by an ion milling method and forming a nano-thick coating layer on a side surface of the polymer pattern to form a nano barrier wall;
Attaching the first substrate and the second substrate such that the surfaces on which the conductive nano barrier walls are formed face each other; And
And forming a dielectric layer between the first substrate and the second substrate.
11. The method of claim 10 or 11, wherein the polymer pattern comprises a linear pattern; Lattice pattern; Or an opening pattern having a circular shape, an elliptical shape, a triangular shape, a square shape, a pentagon shape, a hexagonal shape, an octagonal shape, or a shape of a figure in which these shapes are combined.
12. The method of manufacturing a force touch sensor according to claim 10 or 11, wherein the conductive nano barrier walls of both the substrates have a predetermined pattern, and the nano barrier rib patterns of the first substrate and the second substrate are formed to be shifted without facing each other.
The method according to claim 10 or 11, wherein the ion milling method is ^{10- 5} Torr to 10 ^- The method of producing a force touch sensor to a plasma under a pressure of ³ Torr is performed by accelerated 100ev to 1500eV.
11. The method of manufacturing a force touch sensor according to claim 10 or 11, wherein the coating layer is formed by attaching conductive particles separated from the conductive layer by the ion milling method to the side surface of the polymer pattern.
12. The method of claim 10 or 11, wherein the thickness of the conductive nano barrier is 5 to 200 nm.
12. The method of claim 10 or 11, wherein the height of the barrier is 50 to 2,000 nm.
11. The method of claim 10 or 11, further comprising removing the polymer pattern.
11. The method of claim 10, further comprising forming a transparent conductive layer on the substrate prior to forming the conductive layer.
12. The method of claim 11, further comprising forming a transparent conductive layer on the substrate prior to forming the polymer pattern.
11. The method of claim 10 or claim 11, further comprising forming spacers on the substrate between the conductive nano barrier walls prior to forming the dielectric layer.
An image display device comprising the force touch sensor according to any one of claims 1 to 9.

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