KR20170053017A - Plasmacatalyst type scrubber - Google Patents

Plasmacatalyst type scrubber Download PDF

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KR20170053017A
KR20170053017A KR1020150155260A KR20150155260A KR20170053017A KR 20170053017 A KR20170053017 A KR 20170053017A KR 1020150155260 A KR1020150155260 A KR 1020150155260A KR 20150155260 A KR20150155260 A KR 20150155260A KR 20170053017 A KR20170053017 A KR 20170053017A
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housing
plasma
electrode
catalytic
gas
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KR1020150155260A
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KR101814770B1 (en
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이대훈
송영훈
김관태
조성권
변성현
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한국기계연구원
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Priority to KR1020150155260A priority Critical patent/KR101814770B1/en
Priority to PCT/KR2016/006378 priority patent/WO2016204522A1/en
Publication of KR20170053017A publication Critical patent/KR20170053017A/en
Priority to KR1020170181438A priority patent/KR102286586B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/06—Spray cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/68—Halogens or halogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/77—Liquid phase processes
    • B01D53/78—Liquid phase processes with gas-liquid contact
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/86—Catalytic processes
    • B01D53/8659—Removing halogens or halogen compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818—Employing electrical discharges or the generation of a plasma

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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Environmental & Geological Engineering (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Health & Medical Sciences (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Treating Waste Gases (AREA)
  • Exhaust Gas Treatment By Means Of Catalyst (AREA)

Abstract

An object of the present invention is to provide a plasma catalyst type scrubber which overcomes the temperature deviation in the longitudinal direction of the catalyst. The plasma catalytic scrubber according to an embodiment of the present invention includes a plasma reaction unit for converting a discharge gas into a thermal energy of a plasma arc with electric energy and heating the processing gas introduced into one side with thermal energy, And a catalytic reaction part for introducing the heated processing gas into the catalytic reaction part and decomposing contaminants contained in the processing gas by a catalytic reaction, wherein the catalytic reaction part further includes a temperature deviation eliminating part for eliminating the temperature deviation in the longitudinal direction through which the heated processing gas flows .

Description

PLASMA ACATALYST TYPE SCRUBBER "

The present invention relates to a post-treatment apparatus for removing pollutants contained in a process gas, and more particularly, to a post-treatment apparatus for removing contaminants contained in a process gas from a refractory process gas containing perfluorinated compounds (PFCs) (Process gas) in a plasma catalyst system.

Perfluorinated compounds (PFCs) that occurs in the semiconductor process is typically, CF 4, CHF 3, C 3 F 6, CH 2 F 2, C 2 F 4, C 2 F 6, C 3 F 8, C 4 F 10, C 5 F 8 , SF 6, and NF 3 . Perfluorocompounds (PFCs) are not toxic, but they are subject to emission controls because global warming potentials are thousands to tens of thousands times higher than carbon dioxide. Various techniques for removing PFCs from highly stable materials have been studied.

For example, there is a method of directly combusting a refractory gas containing perfluorinated compounds (PFCs) using a combustible gas. The direct combustion method has a high reaction temperature above 1400 ° C and requires fuel for combustion.

As another example, there is a method in which a refractory gas containing perfluorinated compounds (PFCs) is passed through a high-temperature reaction region of plasma for treatment. The plasma burning method increases the energy required and causes the corrosion of the plasma reactor at high temperatures.

As another example, there is a method of treating a refractory gas containing perfluorinated compounds (PFCs) using an electric heater and a catalyst. The catalytic reactor is maintained at a temperature of 700 to 800 ° C to treat the refractory gas.

The electric heater and the catalyst treatment method relatively increase the volume of the electric heater and the volume of the catalytic reactor and make the whole system unusable even if a part of the electric heater is corroded in a normal operation of the catalytic reactor.

It is an object of the present invention to provide a plasma catalyzed scrubber that decomposes and removes a refractory process gas (i.e., process gas) comprising perfluorinated compounds (PFCs) using plasma and a catalyst.

An object of the present invention is to provide a plasma catalyst type scrubber which overcomes the temperature deviation in the longitudinal direction of the catalyst.

It is also an object of the present invention to provide a plasma catalytic scrubber that reduces the operating cost by controlling the temperature of the plasma when perfluorinated compounds (PFCs) are contained in the process gas.

The plasma catalytic scrubber according to an embodiment of the present invention includes a plasma reaction unit for converting a discharge gas into a thermal energy of a plasma arc with electric energy and heating the processing gas introduced into one side with thermal energy, And a catalytic reaction part for introducing the heated processing gas into the catalytic reaction part and decomposing contaminants contained in the processing gas by a catalytic reaction, wherein the catalytic reaction part further includes a temperature deviation eliminating part for eliminating the temperature deviation in the longitudinal direction through which the heated processing gas flows .

The catalytic reactor may include a catalyst embedded in the housing, and the temperature deviation eliminator may include a tube disposed in the catalyst in the catalyst and having a plurality of gas passages.

The tube may be formed by closing the end in the longitudinal direction.

The catalytic reaction unit may include a catalyst embedded in the housing, and the temperature deviation removing unit may include an RF induction coil disposed on an outer circumference of the housing.

The plasma catalytic scrubber according to an embodiment of the present invention includes a plasma reaction unit and a catalytic reaction unit disposed between the plasma reaction unit and the catalytic reaction unit to control the process gas heated in the plasma reaction unit to a uniform distribution in the catalytic reaction unit And a flow control unit.

Wherein the flow control unit includes a housing that connects the plasma reaction unit and the catalytic reaction unit, and a flow plate that is disposed in the housing and controls the flow, the flow plate being formed flat on the plasma reaction unit side, Diameter portion, and the maximum diameter portion may be formed on the catalytic reaction portion side so that the flow of the process gas is uniformed by diffusing stepwise in the minimum diameter portion.

The flow control unit includes a housing for connecting the plasma reaction unit and the catalytic reacting unit, a flow plate disposed in the housing to form a passage, and a micro passage formed on one side of the flow plate and narrower than the passage, It may include a straightener to make it uniform.

The plasma catalytic scrubber according to an embodiment of the present invention may further include a heater provided at an outer side of the catalytic reaction part to heat the catalytic reaction part.

The plasma catalytic scrubber according to an embodiment of the present invention may further include a heat exchanger provided at a rear end of the catalytic reactor to recover heat by passing through the process gas introduced into the plasma reactor.

The plasma catalytic scrubber according to an embodiment of the present invention may include a water treatment process which is provided at a downstream end of the catalytic reaction unit and injects water into the pollutants decomposed from the treatment gas in the catalytic reaction unit to fix the decomposed pollutants to water, And the like.

Wherein the plasma reaction unit includes a housing having a first inlet and a second inlet at one side to form a neck that receives the discharge gas and the processing gas and narrows the tube, and an electrode insulated in the housing and applied with a driving voltage, The housing may further include an extension part connected to the neck part to form an extended space and electrically connected to the electrode part to guide the rotating arc to be long.

The housing may have a larger diameter which is larger than a diameter narrowing at the electrode side with respect to the neck portion and extending at the enlarged portion.

The plasma reaction unit includes an electrode formed in a cylindrical shape with one side closed and a driving voltage applied thereto, and an electrode connected to the electrode, electrically grounded to form a discharge gap, and having a first inlet at the discharge gap side, The housing may further include an extension that forms an expanded space on the opposite side of the electrode.

The housing may further include a second inlet on the discharge gap side to introduce the processing gas.

The housing may further include a second inlet at the side of the expansion part to introduce the processing gas.

Wherein the plasma reaction unit includes a housing formed with a cylindrical body having one side closed and having a first inlet and a second inlet to introduce a discharge gas and a processing gas, respectively, and an RF induction coil disposed on an outer periphery of the housing, May further include an extension portion forming an extended space on the opposite side of the RF induction coil.

Wherein the plasma reaction unit includes a housing formed of a cylinder closed on one side and having a first inlet to introduce a discharge gas, and an RF induction coil disposed on an outer periphery of the housing, wherein the housing is disposed on the opposite side of the RF induction coil And an expansion unit forming an expanded space and having a second inlet for introducing the processing gas.

The plasma reaction unit includes a first electrode arranged in the longitudinal direction at the center, a discharge gap formed on the outer periphery of the first electrode, arranged in the longitudinal direction, and having a first inlet between the first electrode and the discharge electrode, And a housing which is formed of a cylinder and receives the second electrode and has a second inlet at the rear of the second electrode to introduce the processing gas.

The first electrode and the second electrode may include a cooling water passage for circulating cooling water therein.

As described above, an embodiment of the present invention includes a plasma reaction unit and a catalytic reaction unit. The process gas is heated by the thermal energy of the plasma arc and supplied to the catalytic reaction unit. Therefore, decomposition gas containing perfluorinated compounds (PFCs) Can be removed.

The temperature deviation eliminating part provided in the catalytic reacting part can eliminate the temperature deviation of the catalytic reacting part in the longitudinal direction in which the heated processing gas flows.

The driving power supplied to the plasma reaction part is controlled according to the inflow amount of the perfluorinated compound contained in the treatment gas, that is, the temperature of the plasma is controlled, thereby reducing the operation cost of the plasma reaction part.

FIG. 1 is a configuration diagram of a plasma catalyst type scrubber according to a first embodiment of the present invention.
2 is a cross-sectional view of the catalytic reacting portion applied to FIG.
3 is a cross-sectional view of the plasma reaction unit applied to FIG.
4 is a cross-sectional view of a catalytic reaction part applied to a plasma catalyst type scrubber according to a second embodiment of the present invention.
5 is a configuration diagram of a plasma catalyst type scrubber according to a third embodiment of the present invention.
6 is a cross-sectional view of the flow control portion applied to Fig.
7 is a cross-sectional view of a flow control unit applied to a plasma catalyst type scrubber according to a fourth embodiment of the present invention.
8 is a schematic view of a plasma catalyst type scrubber according to a fifth embodiment of the present invention.
FIG. 9 is a graph showing a change in temperature of the plasma by controlling the driving power supplied to the plasma reaction unit according to the flow rate of the perfluorinated compound included in the treatment gas in FIG.
10 is a cross-sectional view of a plasma reaction part applied to a plasma catalyst type scrubber according to a sixth embodiment of the present invention.
11 is a cross-sectional view of a plasma reaction unit applied to a plasma catalyst type scrubber according to a seventh embodiment of the present invention.
12 is a cross-sectional view of a plasma reaction part applied to a plasma catalyst type scrubber according to an eighth embodiment of the present invention.
13 is a cross-sectional view of a plasma reaction part applied to a plasma catalyst type scrubber according to a ninth embodiment of the present invention.
14 is a cross-sectional view of a plasma reaction unit applied to a plasma catalyst type scrubber according to a tenth embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

FIG. 1 is a configuration diagram of a plasma catalyst type scrubber according to a first embodiment of the present invention. Referring to FIG. 1, the plasma catalyst type scrubber 1 of the first embodiment includes a plasma generating portion 10, a catalytic reacting portion 20, and a water treating portion 30.

The plasma generator 10 is configured to generate a plasma arc in the discharge gas by the electric energy of the supplied driving electric power, that is, converts electric energy into heat energy.

A process gas (i.e., process gas) containing contaminants (e.g., perfluorinated compounds (PFCs)) may be introduced into one side of the plasma generating section 10 and heated by the thermal energy of the plasma arc.

The catalytic reactor 20 is configured to introduce a high-temperature plasma heated by the thermal energy generated in the plasma reactor 10 and a process gas to decompose contaminants contained in the process gas by a catalytic reaction.

The catalytic reactor 20 may incorporate various types of catalysts depending on the pollutants to be treated. For example, the catalytic reacting section 20 may include a manganese oxide-based, noble metal-based, ruthenium (Ru), or rhodium (Rh) catalyst. A manganese oxide, noble metal, ruthenium (Ru) or rhodium (Rh) catalyst can decompose nitrogen oxide (N 2 O) contained in the treatment gas.

In order to stably decompose and remove contaminants in the catalytic reaction, the catalytic reaction section 20 is equipped with a temperature deviation remover 25. The temperature deviation eliminator 25 removes and minimizes the temperature deviation in the longitudinal direction in which the processing gas heated by the thermal energy of the plasma generated in the plasma reactor 10 is built in the catalytic reactor 20.

Specifically, the catalytic reacting section 20 includes a housing 21 for circulating a high-temperature plasma and a heated processing gas, and a catalyst 21, which is built in the housing 21 and catalyzes the plasma and the processing gas, (22).

The temperature deviation removing unit 25 includes a tube 23 disposed in the catalyst 22 in the longitudinal direction of the catalytic reaction unit 20 and in the flow direction of the process gas and a plurality of gas passages (24).

Since the tube 23 is formed by closing the longitudinal end thereof, the high-temperature plasma and the processing gas introduced into one side are distributed through the gas passages 24 while passing through the inside of the tube 23.

That is, a portion of the high-temperature plasma and the processing gas flowing into the housing 21 is directly supplied to and catalyzed between the catalysts 22, while the other part flows into the tube 23 to travel in the gas passages 24 ) To the catalyst 22 while being directly contacted with the catalyst 22 to be catalytically reacted.

Since the tube 23 is disposed in the longitudinal direction of the catalytic reaction part 20 and includes the gas passages 24, the high temperature plasma and the processing gas are uniformly supplied in the entire lengthwise direction of the catalytic reaction part 20 .

Therefore, the catalytic reaction part 20 having the tube 23 therein can maintain a substantially uniform temperature range in the longitudinal direction. In addition, the tube 23 is heated to a high temperature through the conduction heat transfer of the tube 23, thereby heating the surrounding catalyst 22, thereby more efficiently inducing the heat transfer.

For example, the catalyst 22 maintains a high-temperature condition of 700 to 800 ° C or more, which causes a decomposition reaction of the perfluorinated compound (CF 4 ) at the inflow side and the discharge side where the high-temperature plasma and the processing gas are introduced.

That is, the temperature of the tube 23 in the catalytic reaction part 20 as a whole is higher than the temperature of the catalytic reaction part 20, regardless of the cause of the heat loss through the heating of the catalyst 22 and the heat loss through the housing 21 Can be minimized.

Since the catalytic reacting section 20 and the catalyst 22 maintain a uniform temperature level in the longitudinal direction, the perfluorinated compound (CF 4 ), which is a contaminant contained in the treatment gas, is effectively decomposed in the catalyst 22 .

The water treatment unit 30 is provided at the rear end of the catalytic reaction unit 20 and injects water into the decomposed material from the contaminants of the treatment gas in the catalytic reaction unit 20 to fix the decomposed material with water.

Accordingly, the contaminants are decomposed in the catalytic reaction unit 20, and the processing gas that has been water-treated in the water treatment unit 30 is discharged from the water treatment unit 30. The processing gas to be discharged is a state in which the contaminants are removed.

For example, the water treatment section 30 may be configured such that water (H 2 O) is sprayed on a substance decomposed from a perfluorinated compound (PFC) to fix the decomposed substance to hydrogen fluoride (HF) Fixed with water. The water treatment section 30 may include a nozzle (not shown) for spraying water.

Also, the water treatment unit 30 may supply a neutralizing agent to neutralize the water treatment product containing hydrogen fluoride (HF), and may discharge the treatment gas from which the perfluorinated compound (PFC), which is a contaminant, is removed. That is, the water treatment unit 30 may be connected to a discharge line (not shown) connected to a neutralizing agent supply line (not shown) and discharging the processing gas from which contaminants have been removed.

3 is a cross-sectional view of the plasma reaction unit applied to FIG. 3, the plasma reaction unit 10 includes a housing 11 that forms a neck portion 113 into which a discharge gas and a processing gas are inflow and narrows, and a housing 11 that is insulated in the housing 11 and has a driving voltage HV And an electrode 12 to be applied.

The housing 11 has a first inlet 111 and a second inlet 112 on one side thereof and introduces a discharge gas for plasma discharge and a process gas as a process gas containing contaminants into the interior of the housing 11, respectively.

The first inlet 111 may be formed at one side and may be formed in a tangential direction with respect to the circumferential direction of the inner surface of the housing 11. [ Accordingly, the discharge gas can flow in the tangential direction of the first inlet 111 and induce the rotation in the housing 11. [

The housing 11 further includes an extension 114 connected to the neck 113 to form an expanded space S and electrically grounded and extending from the neck 113. Since the wide portion of the extension 114 is electrically grounded, a rotating arc RA connecting the electrode 12 and the wide portion of the extension 114 can be elongated.

The rotating arc (RA) is generated by the rotation of the plasma arc. The rotary arc RA relaxes the concentration of the plasma arc at the central electrode 12 and the grounding portion of the housing 11, thereby relieving the corrosion of the housing 11 by the plasma arc. That is, the rotating arc RA can increase the resistance of the housing 11 to corrosion.

The housing 11 can be formed to have a larger diameter that extends from the expansion portion 114 side than the diameter that narrows from the electrode 12 side toward the neck portion 113 in the flow direction of the processing gas.

As the plasma arc and the processing gas are concentrated at the neck portion 113 and expanded and expanded rapidly from the rear of the neck portion 113 to the wide space S of the expanding portion 114 as described above, The temperature uniformity in the radial direction with respect to the plasma arc and the processing gas can be improved.

The plasma reaction unit 10 may be operated only with a discharge gas such as N 2 or Ar for plasma generation, or may be used as a discharge gas by using part or all of the process gas. The plasma reaction part 10 in Fig. 3 uses all of the process gas and the discharge gas as a discharge gas.

In this way, when part or all of the processing gas is supplied to the plasma reaction part 10, the design of the electrode 12 and the housing 11 is required so that corrosion problems do not occur in the plasma reaction part 10. For this purpose, the electrodes 12 and the inside of the housing 11 are formed in a streamlined shape. Also, the throat 113 may be formed in a streamlined shape to avoid the concentration of the plasma arc.

Since the high temperature plasma arc and the processing gas supplied to the catalytic reaction part 20 in the plasma reaction part 10 have a uniform temperature distribution in the radial direction in the expansion part 114, 21, the plasma arc and the processing gas form a uniform temperature distribution.

The plasma arc and the processing gas having a uniform temperature distribution in the radial direction in the plasma reactor 10 have a temperature distribution in which the temperature deviation is eliminated in the longitudinal direction in the catalytic reactor 20.

Therefore, the perfluorocompound (PFC), which is a contaminant contained in the treatment gas, forms a uniform temperature distribution in the radial direction and the longitudinal direction through the plasma reaction unit 10 and the catalytic reaction unit 20, Can be effectively decomposed and removed by the catalytic reaction in < RTI ID = 0.0 >

Hereinafter, various embodiments of the present invention will be described. The description of the same configuration will be omitted and different configurations will be described in comparison with the first embodiment and the previously described embodiments.

4 is a cross-sectional view of a catalytic reaction part applied to a plasma catalyst type scrubber according to a second embodiment of the present invention. Referring to FIG. 4, in the second embodiment, the catalytic reactor 220 includes a catalyst 22 embedded in the housing 21 and includes a temperature deviation remover 225.

The temperature deviation remover 225 may be formed of an RF induction coil disposed on the outer periphery of the housing 21. [ RF power of several to several hundred MHz band is applied to the temperature deviation remover 225 to generate plasma in the housing 21 by RF discharge. RF discharge can generate high temperature and high density plasma.

That is, the temperature deviation remover 225 formed of an RF (radio frequency) induction coil generates a plasma by RF discharge in the internal part of the catalytic reaction part 220 to remove the temperature deviation in the longitudinal direction of the catalytic reaction part 220 do.

Accordingly, the perfluorocompound (PFC), which is a contaminant contained in the treatment gas, forms a uniform temperature distribution in the radial direction and the longitudinal direction through the plasma reaction unit 10 and the catalytic reaction unit 220, Can be effectively decomposed and removed by the catalytic reaction.

5 is a configuration diagram of a plasma catalyst type scrubber according to a third embodiment of the present invention. Referring to FIG. 5, the plasma catalyst type scrubber 3 of the third embodiment includes a flow control unit 40 disposed between the plasma reaction unit 10 and the catalytic reaction unit 20.

The flow control unit 40 is configured to control the high temperature plasma arc generated in the plasma reaction unit 10 and the heated processing gas to have a uniform temperature distribution in the radial direction and supply the plasma arc to the catalytic reaction unit 20.

6 is a cross-sectional view of the flow control portion applied to Fig. 6, the flow control unit 40 includes a housing 41 connecting the plasma reaction unit 10 and the catalytic reaction unit 20, and a control unit controlling the flow of the plasma arc and the processing gas And a flow plate 42 for supplying the fluid.

The flow plate 42 has a minimum diameter portion 422 formed as a flat surface 421 on the plasma reactor 10 side and forming a passage 424 at the center thereof, And has a maximum diameter portion 423 for uniforming the flow of the plasma arc and the processing gas in the radial direction. The maximum diameter portion 423 is formed on the catalytic reaction portion 20 side.

The flow control unit 40 can improve the temperature uniformity in the radial direction with respect to the plasma arc and the processing gas in the housing 41. [ That is, the plasma arc and the processing gas form a high density in the plane 421 and the minimum diameter portion 422 and then diffuse in the radial direction in the maximum diameter portion 423 while passing through the passage 424, I have.

7 is a cross-sectional view of a flow control unit applied to a plasma catalyst type scrubber according to a fourth embodiment of the present invention. 7, in the fourth embodiment, the flow control unit 240 includes a housing 41 and a flow plate 243 disposed in the housing 41 to form a passage 242, and a straightener 244 ).

Straightener 244 is formed in microchannel 245 disposed in diffusion space at one side of flow plate 243 and narrower than passageway 242 to homogenize flow of plasma arc and process gas. Strainer 244 having micro passageway 245 may be formed in a mesh or honeycomb structure.

That is, the plasma arc and the processing gas form a high density in the passage 242 of the flow plate 243 and then diffuse in the diffusion space and then flow through the microcavity 245 of the straightener 244, 20), it has a uniform temperature distribution in the radial direction.

8 is a schematic view of a plasma catalyst type scrubber according to a fifth embodiment of the present invention. Referring to FIG. 8, the plasma catalyst type scrubber 5 of the fifth embodiment further includes a heater 50 provided at the outer side of the catalytic reaction unit 20.

The heater 50 can heat the catalytic reacting section 20 intermittently separately from the plasma reactor 10. That is, when decomposing CF 4, which is the most difficult decomposing compound (PFC), a temperature of 750 to 800 ° C. is required. And CF 4 may not be continuously discharged to the process gas. In this case, the plasma reaction section 10 is stopped and the heater 50 is driven as an auxiliary. Therefore, the operation cost of the plasma reactor 10 can be reduced.

To this end, the sensor 52 is provided in the passage 51 for supplying the processing gas to the plasma reaction part 10. The sensor 52 senses a specific component, for example, CF 4 , to the process gas to be supplied, and allows the plasma reaction section 10 and the heater 50 to be selectively controlled.

For example, in a period in which CF 4 is not discharged to the processing gas according to the detection of the sensor 52, the plasma reaction part 10 is stopped and the temperature of the catalytic reaction part 20 is maintained at a constant level And the plasma reaction unit 10 can be driven in a period in which CF 4 is discharged.

That is, the heater 50 and the plasma reactor 10 are driven to raise the temperature of the processing gas to the decomposition temperature of CF4 in a specific section, so that a temperature suitable for the catalytic reaction can be effectively formed.

FIG. 9 is a graph showing a change in temperature of the plasma by controlling the driving power supplied to the plasma reaction unit according to the flow rate of the perfluorinated compound included in the treatment gas in FIG.

9, when the discharge of CF 4 is detected by the sensor 52, (a) the driving power HV is supplied to the plasma reactor 10, (b) the plasma reactor 10 is operated Thereby increasing the temperature of the treatment gas (c).

At this time, when the driving power is gradually increased after the temperature of the processing gas is rapidly raised (for example, the decomposition temperature of CF 4 is higher than 750 DEG C) by gradually supplying the driving power at the beginning of the operation of the plasma reactor 10, It can respond quickly to changes in the flow of CF 4 contained.

If the discharge of CF 4 is not detected by the sensor 52 (a), the driving power HV is cut off to the plasma reactor 10, and the plasma temperature is kept low by driving only the heater 50 (C).

The plasma catalyst type scrubber 5 of the fifth embodiment further includes a heat exchange unit 60 provided at a rear end of the catalytic reacting unit 20. The heat exchange unit 60 recovers the waste heat discharged to the rear end of the catalytic reaction unit 20 via the processing gas flowing into the plasma reaction unit 10 so that the processing gas can be heated and supplied to the plasma reaction unit 10 have. Therefore, the operation cost for driving the plasma reaction unit 10 and the heater 50 can be further lowered.

10 is a cross-sectional view of a plasma reaction part applied to a plasma catalyst type scrubber according to a sixth embodiment of the present invention. Referring to FIG. 10, in the sixth embodiment, the plasma reaction unit 610 includes an electrode 612 formed of a cylinder closed on one side and to which a driving voltage HV is applied, and an electrode 612 connected to the electrode 612, And a housing 611 for forming a discharge gap G.

An insulating member 613 is provided between the housing 611 and the electrode 612 to electrically isolate them. The insulating member 613 has a first inlet 631 to allow the discharge gas to flow into the electrode 612 and the housing 611. The insulating member 613 further includes a second inlet 632 to allow the processing gas to flow into the electrode 612 and the housing 611. The insulating member 613 is provided on the discharge gap G side.

The housing 611 further includes an extension 614 that defines an expanded space on the opposite side of the electrode 612. The extension portion 614 is connected to the catalyst reaction portion 20. The housing 611 has a third inlet 633 just before the extension 614. The third inlet 633 injects water (H 2 O) into the decomposed material from the perfluorinated compound (PFC) to fix the decomposed material to hydrogen fluoride (HF).

Since the contact of the plasma arc PA is not fixed to the ground of the high-voltage electrode 612 and the housing 611, the plasma reacting unit 610 can minimize the erosion of the electrode 612, which is mainly generated at the contact point of the plasma arc have.

The plasma reaction unit 610 is a system in which the flow path set in the electrodes 612 and the housing 611 is simple and the processing gas is directly supplied to the plasma arc PA to decompose and treat contaminants, It is possible to greatly increase the flow rate of the gas.

11 is a cross-sectional view of a plasma reaction unit applied to a plasma catalyst type scrubber according to a seventh embodiment of the present invention. Referring to FIG. 11, in the seventh embodiment, the plasma reaction unit 710 includes a housing 711 that is electrically grounded and an electrode 712 to which a driving voltage HV is applied.

An insulating member 713 is provided between the housing 711 and the electrode 712 and the insulating member 713 is provided with a first inlet 731 to discharge the discharge gas into the electrode 712 and the housing 711 Flow.

The housing 711 further includes a second inlet 732 adjacent to the extension 714 side. The second inlet 732 supplies the processing gas to the rear end of the housing 711, that is, to the rear of the plasma arc PA2 formed in the discharge gap G. [ That is, the second inlet 732 can supply the processing gas in a stable state of the plasma arc PA2, and can increase the flow rate of the processing gas.

The housing 711 is provided with a third inlet 733 facing the second inlet 732 just before the extension 714. The third inlet 733 injects water (H 2 O) into the decomposed material from the perfluorinated compound (PFC) to fix the decomposed material with hydrogen fluoride (HF).

12 is a cross-sectional view of a plasma reaction part applied to a plasma catalyst type scrubber according to an eighth embodiment of the present invention. Referring to FIG. 12, in the eighth embodiment, the plasma reactor 810 includes a housing 811 formed as a cylindrical tube with one side closed and an RF induction coil 812 disposed on the outer periphery of the housing 811.

The housing 811 has a first inlet 831 and a second inlet 832 at one side thereof to introduce the discharge gas and the processing gas, respectively. A plasma arc PA is generated in the housing 811 when RF power of several to several hundred MHz band is applied to the RF induction coil 812 in a state where the discharge gas and the processing gas are introduced. RF discharge can generate plasma arc (PA3) with high temperature and density.

In addition, the housing 811 further includes an extension 814 that forms an expanded space on the opposite side of the RF induction coil 812. The expansion portion 814 is connected to the catalyst reaction portion 20. The housing 811 has a third inlet 833 in the extension 814. The third inlet 833 injects water (H 2 O) into the decomposed material from the perfluorinated compound (PFC) to fix the decomposed material with hydrogen fluoride (HF).

13 is a cross-sectional view of a plasma reaction part applied to a plasma catalyst type scrubber according to a ninth embodiment of the present invention. Referring to FIG. 13, in the ninth embodiment, the plasma reactor 910 includes a housing 911 formed as a cylindrical tube with one side closed and an RF induction coil 912 disposed on the outer periphery of the housing 911.

The housing 911 has a first inlet 931 at one side thereof to introduce a discharge gas. The housing 911 has an extension 914 that defines an expanded space on the opposite side of the RF induction coil 912.

The housing 911 has a second inlet 932 in the extension 914 to introduce the process gas and a third inlet 933. The third inlet 933 injects water (H 2 O) into the decomposed material from the perfluorinated compound (PFC) to fix the decomposed material to hydrogen fluoride (HF).

14 is a cross-sectional view of a plasma reaction unit applied to a plasma catalyst type scrubber according to a tenth embodiment of the present invention. Referring to FIG. 14, in the tenth embodiment, the plasma reaction unit 510 includes a first electrode 511, a second electrode 512, and a housing 513.

For example, the first electrode 511 is arranged in the longitudinal direction at the center, and acts as a cathode. The second electrode 512 has a discharge gap G5 formed on the outer periphery of the first electrode 511 and is arranged in the longitudinal direction to serve as an anode and is connected to the first electrode 511, (531) to introduce the discharge gas.

The housing 513 is formed in a cylindrical shape to receive the second electrode 512. The second electrode 512 has a discharge port 515 narrowed at the end of the first electrode 511. Accordingly, the plasma arc PA generated between the first and second electrodes 511 and 512 connected to the DC power source rapidly expands in the housing 513 while being discharged to the narrow discharge port 515. That is, the plasma arc PA5 in the radial direction of the housing 513 can form a uniform temperature distribution.

The housing 513 has a second inlet 532 at the rear of the second electrode 512 and introduces the processing gas and water into the second inlet 532. Therefore, the high temperature plasma arc and the processing gas form a uniform temperature distribution and are supplied to the catalytic reactor 20.

That is, the plasma reaction unit 510 of the tenth embodiment is advantageous to transmit high energy to the DC torch type.

The first electrode 511 and the second electrode 512 have cooling water passages 541 and 542 for circulating cooling water therein. The cooling water passages 541 and 542 circulate the cooling water to cool the first and second electrodes 511 and 512, which are overheated due to the plasma discharge, to an appropriate temperature.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, And it goes without saying that the invention belongs to the scope of the invention.

1, 3, 5: Plasma catalytic scrubber
10, 510, 610, 710, 810, and 910:
11, 513, 611, 711, 811, 911: housing
12, 612, 712: electrode 20, 220: catalytic reaction part
21: housing 22: catalyst
23: tube 24: gas passage
25: temperature deviation removing unit 30:
40, 240: flow control section 41: housing
42, 243: Flow plate 50: Heater
51: passage 52: sensor
60: heat exchanger 111, 531, 631, 731, 831, 931: first inlet
113: neck 112, 532, 632, 732, 832, 932: second inlet
114, 614, 714, 814, 914: extension part 225: temperature deviation removing part (RF induction coil)
242, 424: passage 244: straightener
245: fine passage 421: plane
423: maximum diameter portion 511, 512: first and second electrodes
515: discharge port 522: minimum diameter portion
541, 542: cooling water passage 613, 713: insulating member
633, 733, 833, 933: third inlet 812, 912: RF induction coil
G, G5: discharge gap HV: drive voltage
RA: rotating arc S: space

Claims (19)

A plasma reactor for converting a discharge gas into a thermal energy of a plasma arc with electric energy, and heating the processing gas introduced into one side by thermal energy; And
A catalytic reaction part for introducing the heated processing gas into the plasma reaction part and decomposing contaminants contained in the processing gas by a catalytic reaction;
/ RTI >
The catalytic reacting unit may include:
Further comprising a temperature deviation eliminating section for eliminating a temperature deviation in the longitudinal direction through which the heated processing gas flows. The method according to claim 1,
Wherein the catalytic reacting portion includes a catalyst embedded in a housing,
Wherein the temperature deviation removing unit comprises:
And a tube disposed in the catalyst in the longitudinal direction and having a plurality of gas passages. 3. The method of claim 2,
The tube
And the end in the longitudinal direction is closed. The method according to claim 1,
Wherein the catalytic reacting portion includes a catalyst embedded in a housing,
Wherein the temperature deviation removing unit comprises:
And an RF induction coil disposed on the outer periphery of the housing. The method according to claim 1,
Further comprising a flow control part disposed between the plasma reaction part and the catalytic reaction part and controlling the treatment gas heated in the plasma reaction part to have a uniform distribution in the catalytic reaction part. 6. The method of claim 5,
The flow control unit
A housing connecting the plasma reactor and the catalytic reactor,
And a flow plate disposed in the housing for controlling flow,
The flow plate
A plasma catalytic system in which a maximum diameter portion is formed on the side of the catalytic reacting portion so as to make the flow of the processing gas uniform so as to be diffused stepwise in the minimum diameter portion, Scrubber. 6. The method of claim 5,
The flow control unit
A housing for connecting the plasma reactor to the catalytic reactor,
A flow plate disposed in the housing and defining a passage,
And a straightener formed at one side of the flow plate so as to be narrower than the passage to uniform the flow of the processing gas. The method according to claim 1,
And a heater provided at an outer side of the catalytic reacting portion to heat the catalytic reacting portion. The method according to claim 1,
And a heat exchange unit provided at a rear end of the catalytic reaction unit for recovering heat via the process gas introduced into the plasma reaction unit. The method according to claim 1,
Further comprising a water treatment unit provided at a downstream end of the catalytic reaction unit and spraying water to the pollutant decomposed from the treatment gas in the catalytic reaction unit to fix the decomposed pollutant to water. The method according to claim 1,
The plasma reaction unit
A housing having a first inlet and a second inlet on one side to form a neck which receives the discharge gas and the processing gas and narrows,
An electrode insulated in the housing and to which a driving voltage is applied,
The housing
Further comprising an extension portion connected to the neck portion to form an extended space and electrically grounded to guide the rotating arc connected to the electrode to a longer length. 12. The method of claim 11,
The housing
Wherein the diameter of the expanding portion is larger than the diameter of the neck portion that is narrowed at the electrode side. The method according to claim 1,
The plasma reaction unit
An electrode formed on one side of the closed cylinder and to which a driving voltage is applied, and
And a housing connected to the electrode and electrically grounded to form a discharge gap and having a first inlet at the discharge gap side to receive the discharge gas,
The housing
Further comprising an enlarged portion forming an expanded space on the opposite side of the electrode. 14. The method of claim 13,
The housing
Further comprising a second inlet at the side of the discharge gap to introduce the process gas into the process chamber. 14. The method of claim 13,
The housing
And a second inlet is provided on the side of the expansion part to introduce the processing gas into the processing vessel. The method according to claim 1,
The plasma reaction unit
A housing having a first inlet and a second inlet formed in a cylindrical shape with one side closed and introducing the discharge gas and the processing gas, respectively, and
And an RF induction coil disposed on the outer periphery of the housing,
The housing
Further comprising an enlarged portion forming an extended space on the opposite side of the RF induction coil. The method according to claim 1,
The plasma reaction unit
A housing which is formed as a cylinder whose one side is closed and has a first inlet and into which a discharge gas flows,
And an RF induction coil disposed on the outer periphery of the housing,
The housing
Further comprising an expansion portion forming an expanded space on the opposite side of the RF induction coil and having a second inlet for introducing the process gas. The method according to claim 1,
The plasma reaction unit
A first electrode arranged in the longitudinal direction at the center,
A second electrode arranged in the longitudinal direction by forming a discharge gap on the outer periphery of the first electrode and having a first inlet between the first electrode and the first electrode to introduce the discharge gas,
And a housing which is formed in a cylindrical shape to receive the second electrode and has a second inlet at the rear of the second electrode to introduce the process gas. 19. The method of claim 18,
The first electrode and the second electrode
And a cooling water passage through which cooling water is circulated.
KR1020150155260A 2015-06-15 2015-11-05 Plasmacatalyst type scrubber KR101814770B1 (en)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
WO2018199619A1 (en) 2017-04-25 2018-11-01 주식회사 엘지화학 Optical device
KR102427935B1 (en) * 2022-05-23 2022-08-03 주식회사 동우이엔티 Wet electrostatic precipitation system capable of simultaneous treatment of complex gas mixed with particulate and gaseous pollutants including wet scrubber

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KR102053931B1 (en) * 2019-06-07 2019-12-11 주식회사 에스에스티 Eco-friendly semiconductor manufacturing gas processing power reduction system

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JP2006312121A (en) * 2005-05-06 2006-11-16 Hitachi Ltd Method and apparatus for treatment of perfluoride
US8080226B2 (en) * 2006-05-24 2011-12-20 Techarmonic, Inc. Methods and sytems for the destruction of perfluorinated compounds
KR100910875B1 (en) * 2008-03-21 2009-08-06 한국기계연구원 Plasma scrubber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018199619A1 (en) 2017-04-25 2018-11-01 주식회사 엘지화학 Optical device
KR102427935B1 (en) * 2022-05-23 2022-08-03 주식회사 동우이엔티 Wet electrostatic precipitation system capable of simultaneous treatment of complex gas mixed with particulate and gaseous pollutants including wet scrubber

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