KR20170051808A

KR20170051808A - Socket using high accuracy laser and manufacturing method thereof

Info

Publication number: KR20170051808A
Application number: KR1020150152952A
Authority: KR
Inventors: 이은주
Original assignee: 주식회사 이노글로벌
Priority date: 2015-11-02
Filing date: 2015-11-02
Publication date: 2017-05-12
Also published as: KR101745884B1

Abstract

The present invention relates to a semiconductor test socket, and more particularly, to a semiconductor test socket having an insulating main body having elasticity such that a plurality of first conductive patterns are formed in a vertical direction and upper and lower ends of the first conductive pattern are exposed to upper and lower surfaces of the insulating main body. A plurality of first insulating sheets arranged so as to be spaced apart from each other; And a plurality of second conductive patterns formed on the second insulating sheet at positions corresponding to the plurality of first conductive patterns, wherein at least one of the upper end and the lower end corresponds to the first conductive pattern Wherein the second conductive pattern has a stepped portion extending in the thickness direction of the first insulating sheet so that the second conductive pattern has a step. Accordingly, as the contact performance at the contact portion is improved, reliable measurement results can be provided to the semiconductor test.

Description

TECHNICAL FIELD [0001] The present invention relates to a socket using a super-precision laser,

The present invention relates to a semiconductor test socket and a method of manufacturing the same, and more particularly, to a semiconductor test socket and a semiconductor test socket which can overcome the disadvantages of the pogo-pin type semiconductor test socket and the disadvantages of the PCR socket type semiconductor test socket And a manufacturing method thereof.

The semiconductor device is subjected to a manufacturing process and then an inspection is performed to determine whether the electrical performance is good or not. Inspection is carried out with a semiconductor test socket (or a connector or a connector) formed so as to be in electrical contact with a terminal of a semiconductor element inserted between a semiconductor element and an inspection circuit board. Semiconductor test sockets are used in burn-in testing process of semiconductor devices in addition to final semiconductor testing of semiconductor devices.

The size and spacing of terminals or leads of semiconductor devices are becoming finer in accordance with the development of technology for integrating semiconductor devices and miniaturization trends and there is a demand for a method of finely forming spaces between conductive patterns of test sockets. Therefore, conventional Pogo-pin type semiconductor test sockets have a limitation in manufacturing semiconductor test sockets for testing integrated semiconductor devices.

A technique proposed to be compatible with the integration of such semiconductor devices is to form a perforated pattern in a vertical direction on a silicon body made of a silicone material made of an elastic material and then to fill the perforated pattern with a conductive powder to form a conductive pattern PCR socket type is widely used.

1 is a cross-sectional view of a conventional semiconductor test apparatus 1 of PCR socket type. Referring to FIG. 1, a conventional semiconductor testing apparatus 1 includes a support plate 30 and a semiconductor test socket 10 of PCR socket type.

The support plate 30 supports the semiconductor test socket 10 when the semiconductor test socket 10 moves between the semiconductor element 3 and the test circuit board 5. [ Here, the support plate 30 has a through-hole for the advance and retreat guide formed at the center thereof. The through-hole for coupling is spaced apart from the edge along the edge forming the main through-hole. The semiconductor test socket 10 is fixed to the support plate 30 by a peripheral support portion 50 joined to the upper and lower surfaces of the support plate 30.

The PCR socket type semiconductor test socket 10 has a perforated pattern formed on an insulating silicon body and conductive patterns are formed in the vertical direction by the conductive powder 11 filled in the perforated pattern.

The PCR socket has the advantage of being capable of realizing fine pitches. However, since the conductive powder 11 filled in the perforation pattern is caused by the pressure generated when the semiconductor element 3 is in contact with the inspection circuit board 5 There is a disadvantage in that it is restricted in the thickness formation in the vertical direction.

That is, the conductive powders 11 are brought into contact with each other by the pressure in the vertical direction, so that the conductivity is formed. When the thickness is increased, the pressure to be transmitted to the inside of the conductive powder 11 becomes weak, and conductivity may not be formed. Therefore, the PCR socket has a disadvantage that it is restricted in thickness in the height direction.

In order to overcome the limitation of thickness in the height direction, a semiconductor test socket capable of forming conductivity without using conductive powder has been researched. However, since the semiconductor test socket has elastic movement according to the upward and downward pressure, The development of a semiconductor test socket was lacking.

Korean Patent Laid-Open Publication No. 2002-0090250 (Dec. 02, 2002, Socket structure for semiconductor package test using multiple line grid array), a functional device is formed on a test board in the form of a built- Although a socket structure capable of increasing reliability has been disclosed, there has been a problem as described above.

In addition, in the case where the terminal forming the contact portion such as a semiconductor is fine, contact with the contact portion of the test socket is not easy, and the result of the false semiconductor test is often provided. There is a demand for a semiconductor test socket in which contact portions are improved so that semiconductor performance can be easily tested even if the contact terminals have microscopic contact terminals and there is no difference in shape of the contact terminals.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a semiconductor test socket with high reliability by improving contact performance on a contact portion between a terminal of a test semiconductor and a semiconductor test socket, .

In addition, a disadvantage of the pogo-pin type semiconductor test socket and a disadvantage of the PCR socket type semiconductor test socket are solved, and a semiconductor test socket capable of overcoming the thickness restriction in the height direction, And a manufacturing method thereof.

According to the present invention, the above objects can be accomplished by providing an insulating main body having elasticity; A plurality of first insulating sheets having a plurality of first conductive patterns formed in a vertical direction and spaced apart such that upper and lower ends of the first conductive patterns are exposed to upper and lower surfaces of the insulating main body; And a plurality of second conductive patterns formed on the second insulating sheet at positions corresponding to the plurality of first conductive patterns, wherein at least one of the upper end and the lower end corresponds to the first conductive pattern Wherein the second conductive pattern comprises a contact extension extending in the thickness direction of the first insulating sheet so as to have a step.

Here, the first conductive pattern and the second conductive pattern may be formed with recesses on the upper surface or the lower surface of the insulating body so as to form a rough surface.

The second conductive pattern may include a second base conductive layer formed by patterning a conductive layer formed on both sides of the second insulating sheet, and a nickel plating layer and a gold plating layer sequentially coated on the second base conductive layer can do.

The first conductive pattern may include a first base conductive layer formed by patterning a conductive layer formed on both sides of the first insulating sheet, and a nickel plating layer and a gold plating layer sequentially coated on the first base conductive layer can do.

The first insulating sheet may be disposed on the insulating main body with the center of the first insulating sheet bent in the thickness direction of the first insulating sheet.

The upper surface or the lower surface of the first conductive pattern and the second conductive pattern may be exposed from the insulating body to form a contact portion.

A method of manufacturing a semiconductor test socket for this purpose comprises the steps of: (A) forming a plurality of first conductive patterns on a first insulating sheet; (B) forming a contact extension portion having a plurality of second conductive patterns corresponding to positions of the plurality of first conductive patterns on the second insulating sheet; (C) joining the contact extension in the thickness direction of the first insulating sheet so that a step is formed between the first conductive pattern and the second conductive pattern on at least one of the upper and lower ends of the first conductive pattern .

Here, the second insulating sheet is provided in the form of a PI film having conductive layers on both sides thereof; (B1) forming a second base conductive layer by patterning the conductive layer on both side surfaces of the second insulating sheet; (b2) nickel plating the second base conductive layer to form a nickel plating layer And (b3) gold plating the nickel plating layer to form a gold plating layer.

Here, the step (B) may further comprise forming a recess in an end of the second base conductive layer on which the gold plating layer is formed.

The length of the second base conductive layer in the up-and-down direction is longer than the length of the contact extension in the up-and-down direction, and the step (B) Forming a recess in the center of one end of the base conductive layer; and (b5) cutting the second insulating sheet in which the recess is formed, into a length in the vertical direction of the contact extending portion.

Here, the step (b4) may include the steps of: forming circular recessed holes at the same height of each of the second base conductive layers; And cutting the center of the hollow for holes formed at the same height.

Further, the first insulating sheet is provided in the form of a PI film having a conductive layer formed on the surface thereof; The step (A) includes: (a1) patterning the conductive layer on the surface of the PI film to form a first base conductive layer; (a2) nickel plating on the first base conductive layer to form a nickel plating layer; and (a3) gold plating on the nickel plating layer to form a gold plating layer.

(D) arranging the first insulating sheet to which the contact extending portions are bonded in a state where the center of the first insulating sheet is bent in the thickness direction of the first insulating sheet in the insulating material, and each unit body is formed; (E) bonding the plurality of unit bodies to form an insulating main body.

The step (A) may further include forming a fastening hole passing through both ends of the insulative sheet in the thickness direction in which the base conductive layer is not formed.

The step (E) may include sequentially bonding the unit body formed with the fastening holes to the bar-shaped frame.

Here, since the conductive pattern and the contact extending portion are joined to form a step, and the contact surface is divided into a plurality of portions by forming a groove on the upper surface of the contact extending portion, the contact portions of the fine semiconductor terminals are effectively contacted, .

In addition, since the conductive pattern formed on the insulating sheet and the second conductive pattern forming the contact extended portion have the same conductive structure, they do not have different conductive properties when they are bonded, and the process for forming the conductive pattern and the second conductive pattern , It is possible to maximize the cost reduction in production than to form patterns having different conductive structures individually.

1 is a cross-sectional view of a conventional semiconductor test apparatus of PCR socket type,
2 is a perspective view of a semiconductor test socket according to an embodiment of the present invention,
3 is a sectional view taken along the line III-III in Fig. 2,
4 is a view for explaining the insulating sheet and the base conductive layer,
5 is a view for explaining the formation of a groove in the contact portion,
6 and 7 are views for explaining a contact extension portion formed with a plating layer,
8 is a view for explaining the formation of contact portions by joining contact extension portions.
9 is a view for explaining the formation of the unit body,
10 is a view for explaining formation of an insulating main body by attaching the unit main body of FIG. 9;

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings showing embodiments of the present invention.

FIG. 2 is a perspective view of a semiconductor test socket according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view taken along the line III-III in FIG. 2 and 3, the semiconductor test socket 100 according to the embodiment of the present invention includes an insulating main body 190, a plurality of first insulating sheets 101, and contact extensions 120, 130, 140, and 150 .

The insulating main body 190 is made of an elastic material to form the overall appearance of the semiconductor test socket 100 according to the present invention. In the present invention, it is exemplified that the insulating main body 190 is made of a silicon material. The insulating main body 190 according to the present invention is formed by sequentially attaching a unit body 180 to be described later in a lateral direction W to thereby form an insulating main body 190 forming an outer shape of the semiconductor test socket 100 . A detailed description of the unit main body 180 will be given later.

A plurality of conductive patterns are formed on the first insulating sheet 101 in the vertical direction, and upper and lower ends of the conductive patterns are exposed on the upper surface and the lower surface of the insulating body 190. The exposed upper and lower ends are used as contacts C1 and C1 '.

More specifically, the plurality of first insulating sheets 101 are arranged in the insulating body 190 so as to be spaced apart from each other in the transverse direction W. The plurality of first insulating sheets 101 are held in a state of being spaced apart from each other in the transverse direction W by the insulating main body 190.

A plurality of conductive patterns are formed on the first insulating sheet 101 at a predetermined interval in the width direction D. The plurality of first conductive patterns is used for checking whether there is an abnormality in the semiconductor by contacting the semiconductor device with the terminal of the semiconductor to be tested by electrically connecting the semiconductor device with the test device.

According to an embodiment of the present invention, the contact extension portions 120, 130, 140, and 150 may include a plurality of second conductive patterns corresponding to positions of the plurality of first conductive patterns on the second insulating sheets 121 and 131, And the second conductive pattern corresponding to the first conductive pattern is joined to the first insulating sheet in the thickness direction so as to have a step.

Here, the first conductive pattern and the second conductive pattern are formed at positions corresponding to each other, and the conductive properties according to the constituent materials are the same. For example, patterning of the conductive layers 102 and 122 and materials coated on the patterned conductive layer are formed in the same manner so that the first conductive pattern and the second conductive pattern have different lengths formed in the vertical direction but have a conductive structure have.

That is, the first insulating sheet 101 of the first conductive pattern, the base conductive layer (not shown) formed on the first insulating sheet 101 in the structure of the contact extensions 120 and 130 bonded to the upper surface of the first conductive pattern of FIG. The nickel plating layer 104 and the gold plating layer 105 are sequentially formed on the base conductive layer 102a and the base conductive layer 102a so that the insulating sheets 121 and 131 formed on the contact extensions 120 and 130 and the insulating sheets 121 and 131 The base conductive layers 122a and 132a formed on both sides of the base conductive layers 122a and 132a and the nickel plating layers 124 and 134 sequentially coated on the base conductive layers 122a and 132a and the gold plating layers 125 and 135.

On the lower side of the first conductive pattern, the contact extensions 140 and 150 are bonded to the contact extensions 120 and 130 only in the direction of bonding.

The contact extensions 120, 130, 140, and 150 are electrically connected to the upper or lower end of the first conductive pattern formed on the first insulating sheet 101 in the thickness direction of the first insulating sheet 101. The first conductive pattern and the second conductive pattern are bonded using a conductive adhesive or the like so that conductivity is maintained when they are bonded.

As shown in FIG. 2, the first conductive pattern is joined with the contact extensions 120, 130, 140, and 150 to form the contact portion C in an exposed state on the upper surface or the lower surface of the insulating main body 190.

Here, as the first conductive pattern and the contact extensions 120, 130, 140, and 150 are joined so as to form a step, the contact performance with the contact object is improved.

When the first conductive pattern formed on the first insulating sheet 101 and the contact extensions 120, 130, 140, and 150 have the same conductive structure, they do not have different conductive characteristics. When the first conductive pattern and the second conductive pattern It is possible to maximize the cost reduction in production than to form a pattern having a different conductive structure individually.

In the present invention, the contact portion (C) of the first conductive pattern and the second conductive pattern exposed in the insulating body (190) is formed with a groove on each of the upper surface or the lower surface to form a rough surface.

In the embodiment of the present invention, one groove is formed on the upper surface and the lower surface of each of the first conductive pattern and the second conductive pattern, and the exposed surface is divided into two to form a rough surface. The contact force of the contact pins on the semiconductor terminal side of only about several tens of micrometers can be improved according to the characteristics of the exposed surfaces of the contact extensions 120, 130, 140 and 150, as well as the step difference between the first conductive pattern and the contact extensions 120,

Although the contact portion C is formed at the upper end and the lower end of the semiconductor test socket 100 in the embodiment and the illustrated embodiment of the present invention, when the test apparatus is connected and fixed to the lower end of the semiconductor test socket 100, The formation position of the contact portion C using the contact extensions 120, 130, 140, and 150 may be selectively performed as in the case of forming the contact portion C only at the upper end of the semiconductor test socket 100. [

FIG. 4 is a view for explaining the insulating sheet and the base conductive layer, FIG. 5 is a view for explaining the formation of grooves in the conductive pattern and the contact extension, and FIGS. 6 and 7 are views to be. The structure of the first conductive pattern and the second conductive pattern and the method of manufacturing the semiconductor test socket 100 will be described with reference to FIGS.

4A shows a second insulating sheet 121 having a conductive layer 122 formed thereon and FIG. 4B shows a base conductive layer 122a formed on the second insulating sheet 121 Respectively. A conductive layer 122 is formed on both sides of the second insulating sheet 101. The base conductive layer 122a forming the plurality of conductive patterns is formed through patterning of the conductive layer 122 formed on both sides. The patterning may be performed in the form of cutting or etching an area other than the area where the conductive pattern is to be formed, and patterning is performed to obtain a plurality of spaced-apart base conductive layers 122a used in the semiconductor test socket 100. [

And the second insulating sheet 101 according to the present invention is provided in the form of a PI film. More specifically, on the printed circuit board, a conductive layer 122 having conductivity is formed on both sides of a polyimide PI film. Here, the conductive layer 122 is generally made of a copper material. The first insulating sheet 101 formed of a PI film and the base conductive layer 122a made of a copper material can be used as a circuit board having flexibility.

Fig. 5C shows the formation of the recess 123 in the base conductive layer 122a, and Fig. 5D shows the formation of the groove 123a. A plurality of base conductive layers 122a formed on the second insulating sheet 101 are respectively formed with vertical grooves 123 at the ends thereof in the vertical direction and then along the ends of the base conductive layer 122a When the second insulating sheet 121 is removed by cutting, a semicircular groove 123a is formed at the end of the base conductive layer 122a.

In the embodiment of the present invention, circular recessed grooves 123 are used to form semicircular recesses 123a, but not limited thereto, but may be embodied as recesses 123a of various shapes, It is also possible to form a plurality of grooves 103a at the end.

6E shows that the plating layers 124 and 125 are formed on the base conductive layer 122a. In the embodiment of the present invention, the nickel plating layer 124 and the gold plating layer 125 are sequentially formed on the base conductive layer 122a. The gold plating layer 125 is sequentially formed on the nickel plating layer 124 so that the gold plating layer 125 is formed more firmly than the gold plating layer 125 formed directly on the copper and the gold conductive performance can be utilized for the semiconductor test socket 100 .

When forming the nickel plated layer 124 and the gold plated layer 125, it is preferable to form the plating layers 124 and 125 so that the shape of the groove 123a is maintained by adjusting the plating amount.

The nickel plating layer 124 and the gold plating layer 125 are sequentially formed after the groove 123a is formed in the above embodiment. However, when the second base conductive layer 122a is formed to have the length of the contact extension portion The nickel plating layer 124 and the gold plating layer 125 may be formed, and then a groove 123a may be formed in the upper end surface or the lower end surface.

Meanwhile, the contact extensions 120, 130, 140, and 150 may be manufactured by cutting off the second base conductive layer 122a.

More specifically, the length of the second base conductive layer 122a in the up and down direction is longer than the length of the contact extending portions 120, 130, 140, and 150 in the up and down direction. The second base conductive layer 122a may be cut into the lengths of the contact extensions 120, 130, 140, and 150 in the vertical direction.

6F shows that the end portion of the second base conductive layer 122a on which the groove 123 is formed is cut to form the contact extension portion 120. As shown in FIG. In the embodiment of the present invention, since the contact extensions 120, 130, 140 and 150 are bonded to the upper or lower end of the first conductive pattern, the lengths of the contact extensions 120, 130, 140 and 150 in the vertical direction are shorter than the entire length of the first conductive pattern.

A predetermined length is cut out so as to include a groove 123a formed at the end of the second base conductive layer as shown in (g), (h) and (i), and the nickel plating layer 124 and the gold plating layer 125 When sequentially plated, the contact extension 120 having the second conductive pattern formed thereon is provided.

The groove 123a is formed by forming circular recessed holes 123 at the same height of the second base conductive layer of each second base conductive layer 122a, that is, at one center of the one end, And is formed by cutting along the center of the groove for grooving 123.

Hereinafter, formation of the first conductive pattern will be described. In the embodiment of the present invention, the first conductive pattern is formed through the manufacturing process (a) to (e) shown in FIGS. 4 to 6 during the manufacturing process of the second conductive pattern. Accordingly, the first conductive pattern has a conductive structure corresponding to the second conductive pattern.

However, the length of the first base conductive layer 102a in the up and down direction for forming the first conductive pattern may be different from the length of the second base conductive layer 122a.

Although the second base conductive layer 122a is formed on both surfaces of the second insulating sheet 121, the first base conductive layer 102a must be formed on both surfaces of the first insulating sheet 101 It is not.

For example, the second base conductive layer 102a may be formed by using both side surfaces because the plurality of contact extending portions 120, 130, 140, and 150 can be continuously connected in one direction. However, The first base conductive layer 102a may be formed only on one side of the first insulating sheet 101 so as to correspond to the direction in which the contact extensions 120 and 130 are joined.

8 is a view for explaining the formation of contact portions by joining contact extension portions. Referring to FIG. 8, a semiconductor test socket according to an embodiment of the present invention includes a first insulating sheet 101 having a plurality of first conductive patterns spaced apart from each other, The contact extensions 120, 130, 140, and 150 having the plurality of second conductive patterns formed on the sheet 121 are bonded to form a step.

The contact portion c of the semiconductor test socket is formed with a recess 123a on the upper surface or the lower surface exposed in the insulating main body 190 and the contact portion C ).

Here, it is a matter of course that the contact extensions 120, 130, 140 and 150 can be selectively provided at the upper and lower ends of the conductive pattern depending on the type of the semiconductor test socket 100.

9 is a view for explaining formation of a unit main body. 8, the contact extension portions 120, 130, 140, and 150 are bonded to the upper or lower end of the insulating sheet 101 having the first conductive pattern formed thereon in the thickness direction thereof, and the first conductive pattern is bent in the insulating main body 190 .

More specifically, the contact extension portions 120, 130, 140, and 150 are bonded to the first insulating sheet 101 having the plurality of first conductive patterns described with reference to FIG. 8, and then bent to the insulating body 190.

In the embodiment of the present invention, the first conductive pattern uses a PI film as the first insulating sheet 101 and has a flexible circuit board method. The first conductive pattern can be arranged in a bent shape inside the insulating main body 190 by using the ductility.

The insulating main body 190 is formed by using an insulating material such as silicone having elasticity. At this time, the first insulating sheet 101 having a soft conductive pattern formed thereon is bent in a first state in which the insulating material is bent So as to have a conductive pattern.

In the embodiment of the present invention, the contact extension portions 120, 130, 140 and 150 are bonded to the first insulating sheet 101 having the plurality of first conductive patterns formed thereon, and then cured through the insulating material to form the respective unit bodies 180, A method of attaching the unit body 180 is used.

On the other hand, without forming the unit main body 180, the insulating main body 190 may include a plurality of first insulating sheets 101 on which a plurality of first conductive patterns are formed, and a plurality of insulating sheets 101 are spaced apart from each other And then the liquid insulating material is cured to form the integrated insulating body 190. [

The first conductive pattern formed to have flexibility is arranged to be bent in the insulating body 190 so that the terminal of the semiconductor element is brought into contact with the upper surface of the conductive pattern and the terminal of the inspection circuit board is in contact with the lower surface of the conductive pattern When the semiconductor device for testing is pressed downward, the conductive pattern is elastically moved in the up-and-down direction.

10 is a view for explaining formation of an insulating main body by attaching the unit main body of FIG. 9; Referring to FIG. 10, a fastening hole 170 is formed in the first insulating sheet 101 of the present invention.

It is possible to form a fastening hole 170 penetrating in the thickness direction at both ends in the width direction of the insulating sheet 101 on which the base conductive layer 102a is not formed.

The insulating main body 190 is formed by bonding a plurality of first insulating sheets 101 formed with the fastening holes 170 to the bar-shaped fastening frame 160 after each unit body 180 is formed .

Even when the insulating main body 190 is formed without using the unit main body 180, the fastening frame 160 and the fastening hole 170 can be used. The first conductive pattern is bent by using the fastening hole 170 and the fastening frame 160 formed on the first insulating sheet 101 and the first conductive pattern formed on the plurality of insulating sheets 101 is separated A liquid insulating material is supplied and cured to form the integrated insulating body 190. [

Although several embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various modifications may be made without departing from the principles and spirit of the invention . The scope of the invention will be determined by the appended claims and their equivalents.

100: Semiconductor test socket C: Contact
101: first insulating sheet 103a, 123a: groove
104, 124: Nickel plated layer 105, 125: Gold plated layer
120, 130, 140, 150: contact extension part 121: second insulating sheet
160: fastening frame 170: fastening hole
180: unit body 190: insulating body

Claims

An insulating main body having elasticity;
A plurality of first insulating sheets having a plurality of first conductive patterns formed in a vertical direction and spaced apart such that upper and lower ends of the first conductive patterns are exposed to upper and lower surfaces of the insulating main body;
And a plurality of second conductive patterns formed on the second insulating sheet at positions corresponding to the plurality of first conductive patterns, wherein at least one of the upper end and the lower end corresponds to the first conductive pattern Wherein the second conductive pattern includes a contact extension portion that is joined in the thickness direction of the first insulating sheet so as to have a step.

The method of claim 1, wherein
The first conductive pattern and the second conductive pattern
And a groove is formed in each of the upper surface or the lower surface exposed in the insulating body so as to form a rough surface.

The method of claim 1, wherein
The second conductive pattern
A second base conductive layer formed through patterning of conductive layers formed on both side surfaces of the second insulating sheet,
And a nickel plating layer and a gold plating layer which are sequentially plated on the second base conductive layer.

The method of claim 1, wherein
The first conductive pattern
A first base conductive layer formed through patterning of conductive layers formed on both side surfaces of the first insulating sheet,
And a nickel plating layer and a gold plating layer which are sequentially plated on the first base conductive layer.

The method according to claim 1,
Wherein the first insulating sheet is disposed on the insulating main body with the center of the first insulating sheet bent in the thickness direction of the first insulating sheet.

6. The method according to any one of claims 1 to 5,
Wherein the upper surface or the lower surface of the first conductive pattern and the second conductive pattern are exposed from the insulating body to form a contact portion.

A method of manufacturing a semiconductor test socket,
(A) forming a plurality of first conductive patterns on a first insulating sheet;
(B) forming a contact extension portion having a plurality of second conductive patterns corresponding to positions of the plurality of first conductive patterns on the second insulating sheet;
(C) joining the contact extension in a thickness direction of the first insulating sheet so that a step is formed between the first conductive pattern and the second conductive pattern on at least one of an upper end and a lower end of the first conductive pattern Wherein the semiconductor test socket comprises a plurality of semiconductor chips.

The method of claim 7, wherein
The second insulating sheet is provided in the form of a PI film having conductive layers on both sides thereof;
The step (B)
(b1) forming a second base conductive layer by patterning the conductive layer on both side surfaces of the second insulating sheet,
(b2) nickel plating the second base conductive layer to form a nickel plating layer,
and (b3) gold plating the nickel plating layer to form a gold plating layer.

The method of claim 8, wherein
The step (B)
Further comprising the step of forming a groove in an end of the second base conductive layer on which the gold plating layer is formed.

The method of claim 8, wherein
The length of the second base conductive layer in the vertical direction is longer than the length of the contact extending portion in the vertical direction,
In the step (B), prior to the step (b2)
(b4) forming a groove in the center of one end of the second base conductive layer,
(b5) cutting the second insulating sheet on which the groove is formed, into a length in the vertical direction of the contact extension portion.

The method of claim 8, wherein
The step (b4)
Forming a circular hollow groove hole at the same height of each of the second base conductive layers;
Further comprising the step of cutting along the center of the hole for the groove formed at the same height.

The method of claim 7, wherein
The first insulating sheet is provided in the form of a PI film having a conductive layer formed on its surface;
The step (A)
(a1) patterning the conductive layer on the surface of the PI film to form a first base conductive layer;
(a2) nickel plating the first base conductive layer to form a nickel plating layer,
(a3) forming a gold plating layer by gold plating the nickel plating layer.

The method of claim 7, wherein
(D) disposing the first insulating sheet to which the contact extending portions are bonded in a state in which the center of the first insulating sheet is bent in the thickness direction of the first insulating sheet, and each unit body is formed;
(E) bonding the plurality of unit bodies to each other to form an insulating main body.

The method of claim 7, wherein
The step (A)
Further comprising the step of forming a fastening hole penetrating through the insulating sheet in the thickness direction at both ends in the insulating sheet width direction in which the base conductive layer is not formed.

The method of claim 14, wherein
The step (E)
And sequentially bonding the unit body formed with the fastening holes to a bar-shaped frame.