KR20170050021A - Bias-voltage controller for Geiger-mode avalanche photodiode of particle detection system - Google Patents
Bias-voltage controller for Geiger-mode avalanche photodiode of particle detection system Download PDFInfo
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- KR20170050021A KR20170050021A KR1020150151029A KR20150151029A KR20170050021A KR 20170050021 A KR20170050021 A KR 20170050021A KR 1020150151029 A KR1020150151029 A KR 1020150151029A KR 20150151029 A KR20150151029 A KR 20150151029A KR 20170050021 A KR20170050021 A KR 20170050021A
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- voltage
- bias voltage
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- bias
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- 239000002245 particle Substances 0.000 title claims abstract description 20
- 238000001514 detection method Methods 0.000 title description 11
- 230000015556 catabolic process Effects 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 8
- 230000006698 induction Effects 0.000 claims description 4
- 238000011084 recovery Methods 0.000 abstract description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000004904 shortening Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 244000052769 pathogen Species 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/0059—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Heart & Thoracic Surgery (AREA)
- Medical Informatics (AREA)
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- Surgery (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
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Abstract
Description
The present invention relates to a particle sensor fluorescent sensor for measuring the number of rapidly moving particles by shortening the time taken for recovery to a pre-avalanche state by charge recharging in a bias voltage control circuit for an avalanche photodiode of a particle sensor fluorescent sensor A Geiger-mode avalanche photodiode for particle detection, which attempts to minimize the recovery time, which is the time taken for the charge to be recharged and recovered to the pre-avalanche state, when driving the applied laser diode and Avalanche Photodiode And a bias voltage control device.
Ultraviolet light in the mid-ultraviolet region (200 to 300 nm) can be applied to technologies such as detection and identification of harmful biomolecules and pathogens. This principle is based on the fact that amino acids and biomolecule substances (300 to 400 nm) and visible light (380 to 750 nm) in comparison with the quantum efficiency in the near-ultraviolet region (300 to 400 nm) In particular, in the real-time biological particle measurement using the fluorescence sensor for detecting bio-particles as described above, in-air suspended particles are sucked and sorted, and the particles are irradiated with light It is possible to distinguish between bacterium particles and general particles by measuring the intensity of scattering light and the intensity of fluorescent light generated by the light source. Recently, Ultraviolet ray-induced fluorescence technology using ultraviolet LEDs capable of miniaturization and using only a desired wavelength without additional optical filter is under development.
The avalanche photodiode (APD), which is used for weak signal detection, is operated by the magnitude of the reverse voltage applied to each cell of the semiconductor chip in the avalanche photodiode used in the fluorescent sensor for detecting the biological particle , A linear mode (LM) and a geiger mode (GM).
As shown in FIG. 1, the GM-APD detects a signal by repeatedly reciprocating the VOFF point immediately before the breakdown voltage (V breakdown) and the VON point immediately after the breakdown voltage for a very short time.
A photodiode using an avalanche photodiode absorbs photons and absorbs photons. When a photocurrent is generated, a current flows, a voltage drop occurs in a series connected resistor Rs, a quench phenomenon is quenched, and a charge is recharged to SPAD, It takes a recovery time, which is the time required for recovery to the state before the launch, so that it is difficult to grasp the quantity of the measurement target biomolecules that move rapidly.
In addition, even if there is a variation in the ambient temperature or a change in the power supply voltage, the influence of the bias voltage is not given to the bias voltage of the APD, so that the bias voltage can be controlled at the optimum multiplication factor in the APD, A bias voltage control circuit for a diode and an adjustment method thereof are required to be realized.
SUMMARY OF THE INVENTION It is, therefore, an object of the present invention to provide a method of shortening the time constant of a driving circuit of a novel LD or APD capable of rapidly amplifying the output of a power source for driving a pulsed LD (Laser Diode) or APD (Avalanche photodiode) .
A bias voltage control circuit for an avalanche photodiode according to the present invention is a method for shortening the time constant of a drive circuit of a novel type LD or APD capable of rapidly amplifying a supply voltage supplied to an avalanche photodiode (APD) And a circuit and method for providing a circuit configuration accordingly.
The bias voltage control circuit for an avalanche photodiode according to the present invention includes a voltage varying means for controlling and outputting an input DC voltage by a voltage control signal and controlling the output voltage as a bias voltage to be applied to the APD, And,
Corresponding voltage output means corresponding to a temperature change for outputting a voltage at a temperature gradient of a reverse breakdown voltage of the APD and set voltage output means for outputting a set voltage for setting a voltage of the output terminal to a predetermined voltage;
The reference voltage is extracted from the voltage corresponding to the slope of the temperature corresponding voltage output means and the set voltage, and the voltage control signal is generated so that the reference voltage and the voltage supplied from the output terminal through the resistor become equal, Wherein the voltage changing means includes a digital variable resistance means capable of digitally changing a resistance value by a digital voltage control signal and converting the voltage control signal into a digital voltage control signal, A bias voltage control unit for setting the resistance value of the digital variable resistance means by the digital voltage control signal and controlling the input DC voltage;
A capacitor connected in parallel to the DC power supplied from the bias voltage control unit;
An induction unit connected to the direct current power source and connected to a drive circuit output terminal for supplying power to the laser diode or the avalanche photodiode;
A field effect transistor having an output terminal connected between the inductor and the output terminal of the driving circuit; A voltage controlled oscillator coupled to an input terminal of the field effect transistor; And
And a photodiode driver configured to include an input terminal of the voltage control oscillator and a transistor having an output terminal and an input terminal connected to an output terminal of the driving circuit. And a bias voltage control device for the diode.
According to the present invention, it is possible to rapidly increase the current flowing through a driving circuit for driving a pulse laser diode (LD) or an APD (Avalanche photodiode) to shorten the time constant and amplify the output of the power supply quickly, A bias of a Geiger mode Avalanche photodiode for particle detection that can control the bias voltage at the optimum multiplication factor in the APD so as to reduce the circuit size, A voltage control device is provided.
BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the concept of the principle and structure of the detection of particle detection value using an avalanche photodiode of a detection fluorescent sensor. Fig.
2 is a diagram showing a VOFF point immediately before the breakdown voltage (Vbreakdown) of the avalanche photodiode and a VON immediately after the breakdown voltage.
3 is a bias voltage control circuit according to the present invention.
4 is a time-constant short-circuit power source driving unit according to the present invention.
5 is a bias voltage control device of a Geiger mode Avalanche photodiode for particle detection.
Preferred embodiments of the present invention will be described with reference to the drawings. 3 is a schematic circuit diagram of an embodiment of a bias
The reference
The
The
4 is a circuit of the time constant power supply driving unit according to the present invention. In supplying the
The
When the APD is operated in a state where the bias voltage is supplied, the current flowing in the APD rapidly increases, thereby reducing the voltage applied to the voltage-dividing resistors R1 and R2. When the voltage applied to the base decreases, the voltage of the base terminal of the transistor Tr becomes lower, the voltage of the emitter terminal of the transistor Tr, which is the control terminal of the VCO, is lowered and the output switching frequency of the VCO becomes lower. Lt; / RTI > Therefore, the impedance of the induction unit is lowered, and the current flowing in the induction unit is increased. By operating in this way, the current is quickly charged in the capacitor of the second high-
Claims (1)
Corresponding voltage output means corresponding to a temperature change for outputting a voltage at a temperature gradient of a reverse breakdown voltage of the APD and set voltage output means for outputting a set voltage for setting a voltage of the output terminal to a predetermined voltage;
The reference voltage is extracted from the voltage corresponding to the slope of the temperature corresponding voltage output means and the set voltage and a voltage control signal is generated so that the reference voltage and the voltage supplied through the resistor from the output terminal become equal, And the voltage changing means includes a variable resistance means capable of changing the resistance value by a control signal to convert the voltage control signal into a voltage control signal, A bias voltage control unit for setting a resistance value of the variable resistance means and controlling an input DC voltage;
A capacitor connected in parallel to the DC power supplied from the bias voltage control unit;
An induction unit connected to the direct current power source and connected to a drive circuit output terminal for supplying power to the laser diode or the avalanche photodiode;
A field effect transistor having an output terminal connected between the inductor and the output terminal of the driving circuit; A voltage controlled oscillator coupled to an input terminal of the field effect transistor;
And a photodiode driver configured by an input terminal of the voltage control oscillator and a transistor having an output terminal and an input terminal connected to an output terminal of the driving circuit, respectively, and a time constant single axis power source driver for detecting a particle, An apparatus for controlling a bias voltage of a photodiode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150151029A KR20170050021A (en) | 2015-10-29 | 2015-10-29 | Bias-voltage controller for Geiger-mode avalanche photodiode of particle detection system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150151029A KR20170050021A (en) | 2015-10-29 | 2015-10-29 | Bias-voltage controller for Geiger-mode avalanche photodiode of particle detection system |
Publications (1)
Publication Number | Publication Date |
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KR20170050021A true KR20170050021A (en) | 2017-05-11 |
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KR1020150151029A KR20170050021A (en) | 2015-10-29 | 2015-10-29 | Bias-voltage controller for Geiger-mode avalanche photodiode of particle detection system |
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KR (1) | KR20170050021A (en) |
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2015
- 2015-10-29 KR KR1020150151029A patent/KR20170050021A/en unknown
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