KR20170048894A - Polymer based High Power Tunable Laser Module - Google Patents
Polymer based High Power Tunable Laser Module Download PDFInfo
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- KR20170048894A KR20170048894A KR1020150149545A KR20150149545A KR20170048894A KR 20170048894 A KR20170048894 A KR 20170048894A KR 1020150149545 A KR1020150149545 A KR 1020150149545A KR 20150149545 A KR20150149545 A KR 20150149545A KR 20170048894 A KR20170048894 A KR 20170048894A
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- South Korea
- Prior art keywords
- light
- waveguide
- oscillation wavelength
- bragg grating
- polymer
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- 229920000642 polymer Polymers 0.000 title claims abstract description 31
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 230000010355 oscillation Effects 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 claims abstract description 4
- 239000013307 optical fiber Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 description 13
- 230000001427 coherent effect Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
Abstract
Description
The present invention relates to a polymer-based high power tunable laser module capable of wide wavelength tunability.
Currently, the explosive growth of portable terminals such as smart phones is accelerating the growth of data traffic, which is causing a serious load increase not only in the capacity of the wireless network but also in the transmission capacity of the wired network, which is an optical communication network.
In a high-speed modulation optical communication system such as a 100Gbps communication network, which is being introduced in earnest recently, the operation speed of the optoelectronic components responsible for optical transmission and reception, ie, optical modulator, driver amplifier, electric preamplifier, limiting amplifier, (OOK), which has been generally used, because of the close proximity to the physical limitations of the light intensity modulation technique (OOK).
Recently, coherent optical communication technology has been intensively studied in order to support the operation speed of 100 Gbps or more. Coherent optical communication technology is the only alternative to the future optical communication network of 100 Gbps or higher, Is expected.
Coherent optical communication technology that modulates not only the intensity of light but also the phase, polarization, and frequency of the signal has already been studied in the late 1980s to increase the receiving sensitivity and thus increase the transmission distance. However, due to the full introduction of EDFA, research has been shrinking for a while, and the need for large-capacity data transmission through increased spectral efficiency has been recently re-
In order to construct a coherent optical transceiver, a light source for an optical transmitter module and a light source for a local oscillator of a light receiving module are required. A high output and low noise characteristics are required, and a light source capable of freely changing wavelengths in a C-band communication band is required.
Tunable laser is a basic component that is essential for application to wavelength tunable transponders for coherent optical communications used in WSS nodes for next-generation ROADM systems.
Meanwhile, since WDM communication is extended to the subscriber network, it is necessary to apply high-speed modulation coherent optical communication so as to accommodate a large amount of information from the backbone network to the end of the metro network. Thus, as a coherent optical communication light source for a metro / long- High performance such as broadband tuning, high power, narrow line width, and low cost tunable laser are required.
Tunable laser is a core element of optical communication system and its role is divided into three areas.
(a) As a key element of a coherent optical transmitter in combination with a tunable continuous-output laser-coherent modulator, it has high optical output and wavelength variable characteristics over the entire C band.
(b) Continuous output laser source for local oscillator for coherent reception - Very high optical power (better than 16dBm output), wavelength tunable characteristics over the entire C band, and narrow emission linewidth (300kHz ) Is required.
(c) Direct-modulation light source used in wavelength-division multiplexing system - In the next-generation PON subscriber network, it plays a role of improving the availability of the network and reducing the cost of inventory assets by using wavelength-independent optical transmitters or existing optical transceivers. . Core technologies include direct modulation performance of 10 Gbps or higher and wavelength tunable range required in existing network structures.
1 is a schematic view showing a laser module having a structure in which a conventional laser diode chip and an optical waveguide are directly butt-coupled.
Conventional laser diode chip and direct laser butt-coupling of optical waveguide are laser diode chip for light source, optical waveguide device including Bragg grating for wavelength tuning, and monitor for monitoring optical output of light output from waveguide A thermoelectric cooler for setting the operating temperature of these devices independently of the external environment, and a thermistor for detecting a temperature required to set a certain temperature in the thermoelectric cooler.
For wide wavelength tuning, reliable packaging that protects components from external environments such as moisture is essential, and this packaging is a key factor in determining the price of tunable lasers.
However, in order to obtain a high output light source, a high output is required from the semiconductor laser chip itself, and the high intensity light focused on the optical waveguide changes the refractive index of the polymer Bragg grating. It becomes an obstacle to oscillation in the form of
Particularly, in the conventional technology, the high output semiconductor gain chip itself is likely to change its refractive index due to being driven with a high current, which has a problem of deteriorating the overall stability of the laser. It affects.
Therefore, it is necessary to develop a laser module for solving the above-mentioned problems.
On the other hand, related arts include a silicon optical bench which is formed on a TO stem and has an etched groove concave on the upper surface of Korean Patent Laid-Open Publication No. 2014-0090031; A laser diode installed in an etched groove of the silicon optical bench; A TO cap installed to cover the TO stem; And an exit window provided on the TO cap so as to face the TO stem, wherein the etching groove is inclined such that a width of the etching groove becomes narrower toward the bottom, and the silicon optical bench is obliquely inclined with respect to a horizontal plane And the light emitted from the laser diode is reflected upward in a direction perpendicular to the horizontal plane by the side surface of the etched groove and is emitted through the outgoing window. there was.
SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide a stable, low-cost, polymer-based high output wavelength tunable laser module.
A polymer-based high-power tunable laser module according to the present invention includes: a semiconductor laser chip generating broadband light; A polymer waveguide coupled to the semiconductor laser chip and coupled with the broadband light transmitted from the semiconductor laser chip; A Bragg grating formed on the polymer waveguide; A thin film heater provided on the polymer waveguide formed with the Bragg grating to adjust a reflection band of broadband light incident on the Bragg grating by a thermo-optic effect to convert the reflection band to an oscillation wavelength; A total reflection waveguide for switching a direction of light having an oscillation wavelength transmitted from the Bragg grating by 180 degrees; A 45-degree reflection mirror for vertically converting light having an oscillation wavelength transmitted from the total reflection waveguide; A lens positioned above the 45-degree reflective mirror reflection mirror; A photodiode measuring the power of light having an oscillation wavelength passing through the 45-degree reflection mirror; And a temperature controller including a temperature sensor and a thermoelectric cooler installed below the polymer waveguide.
The total reflection waveguide is composed of three total reflection waveguides which change the direction of light having oscillation wavelength on one side by 60 degrees or two total reflection waveguides which change the direction of light having oscillation wavelength on one side by 90 degrees.
Also, the light having the oscillation wavelength passing through the 45-degree reflection mirror is monitored by the photodiode to monitor the intensity of the output light.
Further, the lens is positioned above the 45-degree reflection mirror, and is reflected by the 45-degree reflection mirror to couple light having an oscillation wavelength vertically emitted to the external optical fiber or the like.
The high efficiency external resonator type tunable laser module according to the present invention can mount all the optical devices in the TO-can package, thereby remarkably lowering the price of the optical device.
In addition, by joining all optical elements to a planar waveguide, complicated processes such as alignment are eliminated, and work is facilitated, thereby contributing to improvement of productivity.
In addition, by using a standardized compact TO-can package, it is possible to perform stable, reproducible and reliable wavelength tuning functions.
1 is a schematic view of a laser module having a structure in which a conventional laser diode chip and a polymer waveguide are directly butt-
Figure 2 is a schematic diagram of a polymer-based high power tunable laser module in accordance with the present invention;
Hereinafter, the technical idea of the present invention will be described more specifically with reference to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the technical concept of the present invention, are incorporated in and constitute a part of the specification, and are not intended to limit the scope of the present invention.
2 is a schematic diagram of a polymer-based high power tunable laser module in accordance with the present invention.
As shown in FIG. 2, the present invention mainly includes a semiconductor laser chip, a polymer waveguide, a Bragg grating, a total reflection waveguide, a thin film heater, a 45 degree reflection mirror, a lens, a photodiode, a thermoelectric cooler and a temperature sensor.
The semiconductor laser chip generates broadband light and is but-coupled to the polymer waveguide formed with the Bragg grating.
The thin film heater is provided on a polymer waveguide formed with a Bragg grating to adjust a reflection band of the broadband light incident on the Bragg grating by a thermo-optic effect and convert it into a tunable laser.
In addition, the thermoelectric cooler and the temperature sensor configured in the temperature controller for controlling the temperature of the polymer waveguide are located below the polymer waveguide.
The Bragg grating formed on the polymer waveguide has a single polymer waveguide formed with a groove having a constant period with respect to the traveling direction of the light, and reflects only the wavelength determined by the lattice spacing. The light reflected from the Bragg grating has an oscillation wavelength having a central wavelength of the reflection band of the Bragg grating due to resonance re-input to the emission surface of the semiconductor laser chip.
In addition, a chip stem for supporting the laser diode chip and a substrate such as silicon, polymer, or glass may be further provided under the semiconductor laser chip.
The light having the oscillation wavelength formed by the semiconductor laser chip and the Bragg grating, that is, the wavelength tunable laser light source is turned 180 degrees by the total reflection waveguide and is directed to the center of the TO-can stem.
The total reflection waveguide may be composed of three total reflection waveguides for changing the direction of light having an oscillation wavelength on one side to 60 degrees or two total reflection waveguides for changing the direction of light having oscillation wavelength on one side to 90 degrees in order to lower its insertion loss.
The light having the oscillation wavelength converted 180 degrees by the total reflection waveguide is separated from the optical waveguide, and again the 45-degree reflection mirror is encountered.
The 45-degree reflection mirror may be used by attaching a separate 45-degree mirror, or may be used by etching the waveguide itself as an inclined surface.
The 45-degree reflection mirror passes only a part of the light having the incident oscillation wavelength and converts most of the remaining light into the vertical direction.
The light having a part of the oscillation wavelength passed through the 45-degree reflection mirror is incident on the photodiode to monitor the entire variable wavelength variable laser output.
The light that is reflected by the 45-degree reflection mirror and travels vertically passes through the optical lens located above the reflection mirror to become parallel light or converged light to the optical fiber.
If the focal length of the optical lens is on the path of the beam on the inclined plane of 45 degrees, it becomes parallel light, which is then incident on the optical fiber through the optical lens located outside the TO-can.
If the focal length is greater than 45 degrees and the distance from the lens to the lens is greater than that of the optical lens, convergent light can be incident on the optical fiber with a single lens. At this time, the lens is selected in consideration of the coupling loss to the optical fiber.
The present invention enables the optical resonator type tunable laser module to mount all the optical devices in the TO-can package, thereby remarkably lowering the price of the optical device.
Further, by joining all the optical elements to the planar waveguide, a complicated process such as alignment disappears and the work is facilitated, which can contribute to productivity improvement.
It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (4)
A polymer waveguide coupled to the semiconductor laser chip and coupled with the broadband light transmitted from the semiconductor laser chip;
A Bragg grating formed on the polymer waveguide;
A thin film heater provided on the polymer waveguide formed with the Bragg grating to adjust a reflection band of broadband light incident on the Bragg grating by a thermo-optic effect to convert into a oscillation wavelength;
A total reflection waveguide for switching a direction of light having an oscillation wavelength transmitted from the Bragg grating by 180 degrees;
A 45-degree reflection mirror for vertically converting light having an oscillation wavelength transmitted from the total reflection waveguide;
A lens positioned above the 45-degree reflective mirror reflection mirror;
A photodiode measuring the power of light having an oscillation wavelength passing through the 45-degree reflection mirror; And
And a temperature control device including a temperature sensor and a thermoelectric cooler installed below the polymer waveguide.
Based high-power tunable laser module consisting of three total reflection waveguides that change the direction of light having oscillation wavelengths on one side to 60 degrees or two total reflection waveguides that change the direction of light having oscillation wavelength on one side to 90 degrees.
A polymer based high power tunable laser module that monitors the light having an oscillation wavelength passing through the 45 degree reflective mirror with a photodiode to monitor the intensity of the output light.
Wherein the 45-degree reflection mirror is positioned above the 45-degree reflection mirror, and the light having an oscillation wavelength vertically reflected by the 45-degree reflection mirror is coupled to an external optical fiber or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150149545A KR20170048894A (en) | 2015-10-27 | 2015-10-27 | Polymer based High Power Tunable Laser Module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150149545A KR20170048894A (en) | 2015-10-27 | 2015-10-27 | Polymer based High Power Tunable Laser Module |
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| KR20170048894A true KR20170048894A (en) | 2017-05-10 |
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| KR1020150149545A KR20170048894A (en) | 2015-10-27 | 2015-10-27 | Polymer based High Power Tunable Laser Module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102451406B1 (en) | 2022-04-11 | 2022-10-07 | 김영태 | Laser head apparatus and method for using the same |
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- 2015-10-27 KR KR1020150149545A patent/KR20170048894A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102451406B1 (en) | 2022-04-11 | 2022-10-07 | 김영태 | Laser head apparatus and method for using the same |
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