KR20170026932A - Plasma chamber being capable of controlling the homogenization of plasma potential distribution - Google Patents

Plasma chamber being capable of controlling the homogenization of plasma potential distribution Download PDF

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KR20170026932A
KR20170026932A KR1020150122973A KR20150122973A KR20170026932A KR 20170026932 A KR20170026932 A KR 20170026932A KR 1020150122973 A KR1020150122973 A KR 1020150122973A KR 20150122973 A KR20150122973 A KR 20150122973A KR 20170026932 A KR20170026932 A KR 20170026932A
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plasma
chamber
potential
primary grid
metal plate
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KR1020150122973A
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Korean (ko)
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KR101784387B1 (en
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김용환
남상훈
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주식회사 인포비온
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention relates to a plasma chamber that maintains a uniform plasma potential. The plasma chamber includes a plasma potential control unit for eliminating a potential difference of a plasma potential according to a position and maintaining a uniform potential. The plasma potential control part may place conductive pins or a metal plate in the chamber or a metal plate on which the conductive pins are mounted. Further, by changing the shape of the plasma production chamber, the flux of the charged particles of the ions or electron beams output from the chamber can be uniformly maintained as a whole.

Description

[0001] The present invention relates to a plasma chamber capable of homogenizing a plasma potential distribution,

The present invention relates to a plasma chamber, and more particularly, to a plasma chamber capable of homogenizing a plasma potential distribution in a plasma chamber according to position.

Among many equipment using vacuum plasma, the energy and flux of the charged particles to be irradiated from the plasma to the target substrate should be kept constant to perform uniform surface treatment. For example, there may be a semiconductor etching process using a plasma, an ion implantation using an ion beam, an equipment for an etching process or a surface treatment process, a surface treatment process using an electron beam, and the like.

The plasma potential is closely related to the potential of the wall surrounding the plasma. If there is a wall surrounding the plasma, diffusion of the plasma from the bulk plasma to the wall takes place. In this case, the potential of the bulk plasma is maintained higher than the potential of the wall in order to suppress the loss of electrons having relatively high mobility through the ambipolar diffusion process and to maintain quasi neutrality. Here, the anode diffusion will be briefly described as follows. Since electrons are much larger in mobility than ions, electrons can diffuse much faster than ions in the case of density gradient. However, the plasma left by the diffusion of the electrons has a relatively large positive charge, which generates an electric field that attracts electrons again. This electric field is large enough to equalize the diffusion of electrons and ions, so that the diffusion of electrons and ions becomes equal. This diffusion is called "bipolar diffusion" whereby the plasma remains quasi-neutral. The electric field generated by the difference in the movement of electrons and ions in this bipolar diffusion plays an important role in determining the electric potential inside the plasma.

In this way, when there is a difference in potential between the bulk plasma and the wall, there is a section where the potential continuously varies between them. In this case, the bulk plasma maintains a high electric potential, and the wall potential is electrically disconnected from any electrode to maintain a floating potential or to connect the earth potential, so that from the bulk plasma toward the wall The potential is reduced.

On the other hand, Korean Patent No. 10-1064567 "A beam-width controllable electron beam providing apparatus" discloses an apparatus for providing an electron beam using plasma. The electron beam providing apparatus according to the above patent is characterized in that the electron particles extracted from the plasma production chamber are provided in the form of an electron beam having a predetermined beam width.

In the electron beam providing apparatus described above, a high voltage is applied to the plasma generation chamber made of a ceramic dielectric such as Quartz, Alumina, Pyrex or the like, that is, a primary grid which is in direct contact with a discharge chamber The potential of the plasma generated inside the discharge chamber floats up along with the applied voltage, so that a high voltage is applied. However, since the discharge chamber is made of ceramic, it comes into contact with the plasma with a floating potential. This floating potential is caused by the accumulation of certain electric charges according to the operation of the plasma, so that the potential is constant. Therefore, when the voltage gradually moves away from the primary grid to which the voltage is applied and approaches the wall of the discharge chamber, a wall potential is generated, and a potential difference occurs depending on the position in the chamber.

1 is a conceptual diagram schematically showing a conventional plasma chamber. As shown in FIG. 1, as the voltage is applied to the primary grid and the chamber walls are made of ceramic, the plasma potential in the plasma chamber maintains a higher potential as it approaches the primary grid, So that the potential difference is generated as a whole. As a result, an arc is generated due to the unbalanced charge on the grid which applies the high voltage due to the potential difference, or the primary grid is damaged or etched due to the ion collision due to the potential difference inside the plasma, Which is a cause of contamination. This problem causes a problem that the lifetime of equipment using the plasma chamber is lowered.

In addition, when the ion beam is extracted from the conventional plasma chamber through the charge and accelerating grids, they have a Gaussian distribution with the highest flux at the central portion and a lower flux toward the edge. Referring to FIG. 6, when the ion beam is drawn out from the conventional plasma chamber, the intensity of the current and the flux of the central portion is concentrated due to the Gaussian distribution. Due to this problem, the beam uniformity control for the output beam is greatly influenced by the actual process.

Accordingly, the present invention proposes a plasma chamber in which the output charged particle beam is uniformly output as a whole.

Korean Patent Registration No. 10-1064567

SUMMARY OF THE INVENTION It is an object of the present invention to provide a plasma chamber having a structure capable of controlling the plasma potential in a plasma generation chamber to be uniformly maintained.

It is another object of the present invention to provide a plasma chamber in which the output beam is uniformly output as a whole.

It is still another object of the present invention to provide a plasma chamber in which the flux of the output charged particle beam is uniformly output wholly while the plasma in the plasma production chamber is uniformly maintained.

According to a first aspect of the present invention, there is provided a plasma chamber capable of controlling a plasma potential, the plasma chamber having a gas inlet and an outlet, and generating and maintaining a plasma using gas introduced through the gas inlet A plasma generation chamber; An antenna disposed on an outer circumferential surface of the plasma production chamber to provide RF power; A primary grid mounted at an outlet of the plasma production chamber; A secondary grid disposed at a distance from the primary grid; A tertiary grid that may be disposed or omitted from the secondary grid by a predetermined distance; And a plasma potential control unit disposed in the plasma in the plasma generation chamber in a state of being electrically connected to the primary grid to control the plasma potential.

In the plasma chamber capable of controlling the plasma potential according to the first aspect, the plasma potential control unit is composed of a plurality of conductive pins, one end of the conductive pins is connected to the primary grid, and the other end is connected to the plasma The height and arrangement of the conductive pins and the spacing distance between the conductive pins adjacent to each other are determined according to the plasma potential in the plasma.

In the plasma chamber capable of controlling the plasma potential according to the first aspect, the plasma potential control unit may be formed of a metal plate, and the metal plate may include a plasma generating chamber And one end of the metal plate is electrically connected to the primary grid.

In the plasma chamber capable of controlling the plasma potential according to the first aspect, the plasma potential control unit may be formed of a metal plate, and the metal plate may be disposed in the plasma generating chamber And one end of the metal plate is electrically connected to the primary grid, and a plurality of conductive pins are formed on one surface of the metal plate and the other end is positioned in the plasma, And the conductive pins are preferably located in a plasma.

In the plasma chamber capable of controlling the plasma potential according to the first aspect, the plasma potential control unit may be formed of a metal plate, and the metal plate may include a plasma generating chamber Preferably, the metal plate is in contact with the plasma chamber, and one end of the metal plate is electrically connected to the primary grid.

In the plasma chamber capable of controlling the plasma potential according to the first aspect, a protective film composed of a ceramic material may be formed on the surface of the conductive pins, and a protective film made of a ceramic material is formed on the surface of the metal plate It is possible.

A plasma chamber according to a second aspect of the present invention includes: a plasma generation chamber having a gas inlet and an outlet, and generating and holding a plasma using gas introduced through the gas inlet; An antenna disposed on an outer circumferential surface of the plasma production chamber to provide RF power; A primary grid mounted at an outlet of the plasma production chamber; And a secondary grid disposed at a distance from the primary grid; A tertiary grid that may be disposed or omitted from the secondary grid by a predetermined distance; And an inlet side wall facing the grid of the plasma production chamber is formed into a recessed shape.

In the plasma chamber according to the second aspect of the present invention, the plasma chamber further includes a plasma potential control unit, and the plasma potential control unit includes a plasma in the plasma generation chamber in a state of being electrically connected to the primary grid, It is preferable to control the plasma potential.

The plasma chamber according to the present invention can maintain the plasma potential in the chamber as a whole uniformly. Therefore, the plasma chamber according to the present invention can solve the problems caused by the plasma potential difference according to the position.

Also, by changing the shape of the production chamber, the plasma chamber according to the present invention allows the flux of the charged particle beam output from the chamber outlet to be uniformly output as a whole rather than a Gaussian form having a high center.

1 is a conceptual diagram schematically showing a plasma chamber for outputting a conventional charged particle beam.
2 is a cross-sectional view illustrating a plasma chamber capable of controlling a plasma potential by connecting a plurality of fins to a grid according to a first embodiment of the present invention.
3 is a cross-sectional view schematically illustrating a plasma chamber capable of controlling a plasma potential by providing a plate electrically connected to a grid inside a chamber facing a grid according to a second embodiment of the present invention.
4 is a cross-sectional view schematically illustrating a plasma chamber capable of plasma potential control according to a third embodiment of the present invention.
5 is a cross-sectional view schematically showing an embodiment in which the position of the plasma potential control unit is set differently in the plasma chamber capable of plasma potential control according to the second embodiment of the present invention.
6 is a conceptual diagram showing that a flux of a beam has a Gaussian distribution when a charged particle beam is drawn out from a conventional plasma chamber.
7 is a cross-sectional view schematically showing a plasma chamber according to a fourth embodiment of the present invention.

The plasma chamber according to the present invention is configured to uniformly maintain the plasma potential according to the position in the chamber.

Hereinafter, the structure and operation of the plasma chamber according to the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First Embodiment

2 is a cross-sectional view illustrating a plasma chamber capable of plasma potential control according to the first embodiment of the present invention.

2, the plasma chamber 2 according to the present embodiment includes a plasma generation chamber 200, a primary grid 210, a secondary grid 220, an antenna 230, and a plasma potential control unit 240 Respectively.

The plasma generation chamber 200 may have a hollow portion in which a plasma can be generated. The plasma generation chamber 200 may be formed of a ceramic dielectric such as Quartz, Alumina, or Pyrex. One embodiment of the plasma production chamber includes a main body having an inlet and an outlet formed at positions opposite to each other, and a gas inlet formed at an inlet of the main body. The antenna 230 is disposed on the outer circumferential surface of the plasma production chamber to provide RF power for plasma generation. The antenna may be a copper tube, a metal tube coated with silver, or a tube made of other metal material. Meanwhile, it is preferable that a coating layer composed of a ceramic insulating material is applied to the surface of the antenna to improve plasma efficiency, and a cooling water passage for cooling the antenna may be disposed therein. The coating layer may be made of an insulating ceramic material such as alumina, zirconia, silicon nitride, AlN, or the like. The antenna is wound on the outer circumferential surface of the plasma generation chamber a plurality of times to provide RF power to the plasma production chamber. When argon gas or the like is injected into the plasma generation chamber through the gas inlet and RF power is applied to the antenna surrounding the outer circumferential surface of the plasma generation chamber, the argon gas in the plasma generation chamber is dissociated by the RF power source, Ar +), an argon atom, and electrons (e-).

The primary grid 210 and the secondary and tertiary grids 220 are made of a material such as Si, Mo, Ti, Graphite, W, etc. The primary grid includes a plurality of first through holes, And the third grid includes a plurality of third through holes. The primary grid and the secondary and tertiary grids are preferably disposed side by side so that the primary through holes and the secondary through holes are aligned while maintaining a certain distance from each other.

The primary grid 210 is mounted at the outlet of the plasma production chamber, so that the plasma in the adjacent region maintains a potential according to the voltage applied to the primary grid. That is, the plasma in the plasma production chamber is floating at the potential applied to the primary grid in contact with the plasma. The secondary grid 220 is disposed at a predetermined distance from the primary grid and extracts electrons or ions from the plasma charged particles by applying a voltage having a polarity opposite to that of the voltage applied to the primary grid .

As shown in the figure, when the switch is connected to a power source having a positive potential on the primary grid (shielding grid), the plasma can be applied to the positive potential to extract the ion beam, and a negative When switched to a power source having a potential, the plasma is applied to the negative potential to extract the electron beam. At this time, the secondary grid (acceleration grid) should be given a potential having a polarity opposite to that of the primary grid. In the figure, the power and power connections of the secondary grid are omitted to help understand the circuit.

At this time, the electrons or ions extracted by the secondary grid are sequentially accelerated through the primary through holes and the secondary through holes to form a plurality of electron beams or ion beam stems all directed in one direction.

The plasma potential control unit 240 is formed of a conductive material and is disposed at a predetermined distance from the side wall of the plasma generation chamber in a state of being electrically connected to the primary grid so as to control the plasma potential. The plasma potential control unit is electrically connected to the primary grid, thereby maintaining the same potential as the primary grid.

The plasma potential control unit is composed of a plurality of conductive pins, one end of the conductive pins is connected to the primary grid, and the other end is located in the plasma. Thus, the plasma potential at a location adjacent to the conductive fins can maintain the same potential as the conductive fins.

The plasma chamber according to this embodiment will be able to maintain the plasma potential uniformly throughout by the conductive fins.

Meanwhile, since the conductive pins must be disposed inside the plasma, it is preferable to form a protective layer of dielectric material on the surfaces of the conductive pins to prevent the surfaces of the conductive pins from being damaged by the plasma.

Second Embodiment

The plasma chamber according to the second embodiment of the present invention includes a plasma potential control unit formed of a metal plate.

3 is a cross-sectional view schematically showing a plasma chamber capable of plasma potential control according to a second embodiment of the present invention. Referring to FIG. 3, the plasma potential controller 340 of the plasma chamber 3 according to the present embodiment includes a metal plate in a plasma production chamber. The remaining configuration of the plasma chamber according to the present embodiment is the same as that of the first embodiment except for the plasma potential control unit, and thus a duplicate description will be omitted.

The metal plate of the plasma potential controller 340 according to this embodiment is preferably electrically connected to the primary grid and is preferably positioned adjacent to the inner sidewall of the plasma generation chamber at a position opposite to the primary grid . This makes it possible for the primary grid and the adjacent region of the inner sidewalls of the plasma generation chambers facing each other to maintain the same potential.

The metal plate constituting the plasma potential control part may be constituted by a single flat plate or may be formed into a plurality of flat plates or spiral shapes.

5 is a cross-sectional view schematically showing an embodiment in which the position of the plasma potential control unit 440 is set differently in the plasma chamber 4 capable of plasma potential control according to the second embodiment of the present invention. As shown in Fig. 5, another embodiment of the second embodiment is characterized in that the plasma potential control section is provided outside the plasma chamber. The configuration of the plasma potential control unit is the same as that of the second embodiment, except that the installation position is different.

Third Embodiment

The plasma chamber according to the third embodiment of the present invention includes a plasma potential control unit formed of a metal plate having conductive fins.

4 is a cross-sectional view schematically illustrating a plasma chamber capable of plasma potential control according to a third embodiment of the present invention. 5, the plasma potential control unit 540 of the plasma chamber 5 according to the present embodiment includes a metal plate in a plasma production chamber, and a plurality of conductive fins are formed on one surface of the metal plate . The remaining configuration of the plasma chamber according to the present embodiment is the same as that of the first embodiment except for the plasma potential control unit, and thus a duplicate description will be omitted.

The metal plate of the plasma potential controller 540 according to this embodiment is preferably electrically connected to the primary grid and is preferably located adjacent to the inner sidewall of the plasma generation chamber at a position opposite to the primary grid . This makes it possible for the primary grid and the adjacent region of the inner sidewalls of the plasma generation chambers facing each other to maintain the same potential.

A plurality of conductive pins are formed on one surface of the metal plate, and one end of the conductive pins is located in the plasma. Thus, the plasma potential at a location adjacent to the conductive fins is able to sustain the voltage applied to the conductive fins. The height, thickness, and spacing distance of the conductive fins may be determined differently depending on the arrangement position in the plasma.

Since the conductive pins must be disposed inside the plasma, it is preferable to prevent the surfaces of the conductive pins from being damaged by the plasma by forming a protective film of dielectric material on the surfaces of the conductive pins.

Fourth Embodiment

The plasma chamber 6 according to the fourth embodiment of the present invention is configured such that the main body of the chamber is formed in a dome-shaped form at the inlet side wall of the plasma chamber, so that the plasma space at the center of the plasma chamber becomes a plasma Space. As described above, the plasma chamber according to the present embodiment reduces the plasma potential by controlling the plasma volume at the center portion to be small.

7 is a cross-sectional view schematically showing a plasma chamber capable of plasma potential control according to a fourth embodiment of the present invention. Referring to FIG. 7, the plasma chamber body 600 of the plasma chamber according to the present embodiment is formed in a structure in which an inlet side wall equipped with a gas inlet is recessed.

The plasma chamber according to the fourth embodiment of the present invention can control the Gaussian distribution of the output beam flux by designing a small volume of the central portion of the chamber for plasma generation. Therefore, unlike the conventional structure of FIG. 6 in which the beam current and flux are concentrated at the central portion, the plasma chamber according to the fourth embodiment of the present invention reduces the beam current and flux at the center portion, It is possible to improve the uniformity of the film.

On the other hand, while using the plasma chamber body having the structure of the fourth embodiment, the plasma potential control part in the first to third embodiments may be selectively applied. In this manner, by providing the plasma potential control unit with the structure change of the plasma chamber main body, the plasma potential in the plasma chamber can be uniformly maintained as a whole.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that various changes and modifications may be made without departing from the spirit and scope of the invention. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The plasma chamber according to the present invention is an apparatus for extracting an ion beam or an electron beam from a plasma, and can be widely used in various manufacturing processes using semiconductors and plasma.

2, 3, 4, 5, 6: Plasma chamber
200, 600: plasma generation chamber
210: primary grid
220: Secondary grid
230: antenna
240, 340, 440, 540: Plasma potential control unit

Claims (15)

A plasma generation chamber having a gas inlet and an outlet and generating and maintaining a plasma using the gas introduced through the gas inlet;
An antenna disposed on an outer circumferential surface of the plasma production chamber to provide RF power;
A primary grid mounted at an outlet of the plasma production chamber;
A secondary grid disposed at a distance from the primary grid; And
A plasma potential control unit which is formed of a conductive material and disposed in a plasma in a plasma generation chamber in a state of being electrically connected to the primary grid to control a plasma potential;
And the plasma potential is controllable. 2. The plasma display apparatus according to claim 1, wherein the plasma potential control unit comprises a plurality of conductive pins, one end of the conductive pins is connected to the primary grid, and the other end is located in the plasma. Plasma chamber. The plasma chamber according to claim 2, wherein the height and arrangement of the conductive fins and the spacing distance between adjacent conductive fins are determined according to the plasma potential in the plasma. The plasma processing apparatus according to claim 1, wherein the plasma potential control unit is composed of a metal plate, the metal plate is located on the inner surface of the plasma production chamber facing the primary grid, Wherein the plasma is electrically connected to the primary grid. The plasma processing apparatus according to claim 1, wherein the plasma potential control unit is formed of a metal plate, the metal plate is located on an outer surface of the plasma production chamber facing the primary grid, Wherein the plasma is electrically connected to the primary grid. 5. The plasma chamber according to claim 4, wherein a plurality of conductive pins are formed on one surface of the metal plate, and the conductive pins are disposed on the plasma. The plasma chamber according to claim 2, wherein a protective film made of a material capable of being electrically insulated is formed on a surface of the conductive pins. The plasma chamber according to claim 4, wherein a protective film made of a material capable of being electrically insulated is formed on the surface of the metal plate. The plasma chamber according to claim 6, wherein a protective film made of a material capable of being electrically insulated is formed on a surface of the conductive pins. The plasma chamber according to any one of claims 7, 8, and 9, wherein the protective film is made of a ceramic material and electrically insulated. A plasma generation chamber having a gas inlet and an outlet and generating and maintaining a plasma using gas introduced through the gas inlet;
An antenna disposed on an outer circumferential surface of the plasma production chamber to provide RF power;
A primary grid mounted at an outlet of the plasma production chamber; And
A secondary grid disposed at a distance from the primary grid;
Wherein the plasma generation chamber has an inlet side wall that is recessed into the inside of the plasma chamber. The plasma processing apparatus according to claim 11, wherein the plasma chamber further comprises a plasma potential control unit,
Wherein the plasma potential control unit comprises:
Wherein the plasma chamber is made of a conductive material and disposed in a plasma in a plasma generation chamber in a state of being electrically connected to the primary grid to control the plasma potential. 13. The plasma display apparatus according to claim 12, wherein the plasma potential control unit comprises a plurality of conductive pins, one end of the conductive pins is connected to the primary grid, and the other end is located in the plasma. Plasma chamber. The plasma processing apparatus according to claim 12, wherein the plasma potential control unit is formed of a metal plate, the metal plate is positioned on the inner surface of the plasma production chamber facing the primary grid, Wherein the plasma is electrically connected to the primary grid. The plasma processing apparatus according to claim 12, wherein the plasma potential control unit is formed of a metal plate, the metal plate is located on an outer surface of the plasma production chamber facing the primary grid, Wherein the plasma is electrically connected to the primary grid.
KR1020150122973A 2015-08-31 2015-08-31 Plasma chamber being capable of controlling the homogenization of plasma potential distribution for a charged particle beam output apparatus KR101784387B1 (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR20200008444A (en) * 2018-07-16 2020-01-28 주식회사 뉴파워 프라즈마 Plasma reactor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064567B1 (en) 2008-10-16 2011-09-14 김용환 Electron beam source being capable of controlling beam width

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JP4628874B2 (en) * 2005-06-03 2011-02-09 東京エレクトロン株式会社 Plasma processing apparatus and potential control apparatus
JP5772941B2 (en) * 2013-12-25 2015-09-02 東レ株式会社 Plasma CVD equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064567B1 (en) 2008-10-16 2011-09-14 김용환 Electron beam source being capable of controlling beam width

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200008444A (en) * 2018-07-16 2020-01-28 주식회사 뉴파워 프라즈마 Plasma reactor

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