KR20170018609A - Pattern structure - Google Patents

Pattern structure Download PDF

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Publication number
KR20170018609A
KR20170018609A KR1020150112449A KR20150112449A KR20170018609A KR 20170018609 A KR20170018609 A KR 20170018609A KR 1020150112449 A KR1020150112449 A KR 1020150112449A KR 20150112449 A KR20150112449 A KR 20150112449A KR 20170018609 A KR20170018609 A KR 20170018609A
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South Korea
Prior art keywords
film
pattern
substrate
end portion
pattern film
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KR1020150112449A
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Korean (ko)
Inventor
기미야스 오카모토
히로유키 이토우
슈지 이치카와
세이이치 다키가와
Original Assignee
미쓰비시 엔피쯔 가부시키가이샤
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Priority to KR1020150112449A priority Critical patent/KR20170018609A/en
Publication of KR20170018609A publication Critical patent/KR20170018609A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention relates to a pattern structure (100) which comprises: a substrate (10); and a pattern layer (14) formed by an atom layer deposition method on the surface (10S) of the substrate (10). The pattern layer (14) includes a stepped unit (14A) protruded to a direction A intersecting with a normal direction of the surface (10S) of the substrate (10) as well as inclining on the surface (10S) of the substrate (10).

Description

Pattern structure {PATTERN STRUCTURE}

The present invention relates to a pattern structure.

A method of forming a thin film on a resist pattern by atomic layer deposition (ALD) and removing the resist pattern by a lift-off method (lift off method) (See, for example, Patent Documents 1 to 4). In this method, after a resist is coated on a substrate, a resist pattern is formed by exposing and developing the resist.

Patent Document 1: Japanese Patent Laid-Open Publication No. 2011-40656 Patent Document 2: JP-A-2009-157977 Patent Document 3: Japanese Patent Laid-Open No. 2007-335727 Patent Document 4: JP-A-2008-547150

8 is a diagram schematically showing each step of a method of forming a pattern film as described above. First, as shown in Fig. 8A, a thin film 614 is formed on a resist pattern 512 formed on a substrate 510 by photolithography by atomic layer deposition. When the resist pattern 512 is formed on the substrate 510 by the photolithography method, the side surface of the resist pattern 512 is vertically erected on the surface 510S of the substrate 510. On the other hand, the thin film 614 formed by the atomic layer deposition method has excellent coverage characteristics. The thin film 614 formed by the atomic layer deposition method also extends perpendicular to the surface 510S of the substrate 510 along the side surface of the resist pattern 512. [

Next, as shown in Fig. 8B, the resist pattern 512 is removed using the lift-off method. As a result, a part of the thin film 614 formed on the resist pattern 512 is also removed. In this case, the end portion 514A of the pattern film 514 formed from the thin film 614 is vertically erected on the surface 510S of the substrate 510. Therefore, when a functional film such as an anisotropic conductive film (ACF) is provided on the pattern film 514 for example, near the end portion 514A of the pattern film 514, the continuity of the anisotropic conductive film There is a possibility that the properties of the functional film such as conductivity (conductivity) may deteriorate.

An object of the present invention is to provide a pattern structure in which rising of an end portion of a pattern film is suppressed.

A pattern structure according to one aspect of the present invention includes a substrate and a pattern film formed on the surface of the substrate by an atomic layer deposition method, And an end protruding in a direction intersecting the normal direction of the surface of the base material.

In this pattern structure, the end portion of the pattern film does not protrude in the normal direction of the surface of the substrate. Therefore, the rising of the end portion of the pattern film is suppressed.

The end portion may have an upper surface extending in a direction in which the end portion protrudes and a maximum value of an angle formed between the surface of the base material and the upper surface of the end portion may be greater than 0 degrees and less than 60 degrees.

In this case, the rising of the end portion of the pattern film is further suppressed.

At least a part of the edge of the pattern film may have an irregular shape when viewed from the normal direction of the surface of the substrate.

In this case, for example, when another member is provided on the pattern film, the contact area between the member and at least a part of the edge of the pattern film increases. Therefore, the adhesion between the member and the pattern film is improved.

A pattern structure according to another aspect of the present invention includes a base material and a pattern film formed by atomic layer deposition on the surface of the base material, At least a part of which has an irregular shape.

In this pattern structure, for example, if another member is provided on the pattern film, the contact area between the member and at least a part of the edge of the pattern film increases. Therefore, the adhesion between the member and the pattern film is improved.

According to the present invention, it is possible to provide a pattern structure in which the rising of the end portion of the pattern film is suppressed.

1 is a plan view schematically showing a pattern structure according to an embodiment.
2 is a cross-sectional view of the pattern structure along line II-II in FIG.
3 is a TEM cross-sectional view of a pattern structure according to an embodiment.
4 is a TEM cross-sectional view of a pattern structure according to an embodiment.
5 is a diagram showing a planar shape of a pattern structure according to an embodiment.
Fig. 6 is a diagram schematically showing each step of the method of manufacturing a pattern structure according to the embodiment.
7 is a diagram schematically showing a pattern structure according to another embodiment.
8 is a diagram schematically showing each step of a method of forming a patterned film using a resist pattern.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same reference numerals are used for the same or equivalent elements, and redundant explanations are omitted.

1 is a plan view schematically showing a pattern structure according to an embodiment. 2 is a cross-sectional view of the pattern structure along line II-II in FIG. In Figs. 1 and 2, an XYZ orthogonal coordinate system is shown. The pattern structure 100 shown in Figs. 1 and 2 includes a substrate 10 and a pattern film (not shown) formed on the surface 10S of the substrate 10 by the atomic layer deposition method 14). The surface 10S of the substrate 10 is, for example, a plane parallel to the XY plane. The patterned film 14 can be formed by atomic layer deposition and lift-off method as described later.

The pattern film 14 may have an end portion 14A projecting in a direction A which is inclined at an angle? With respect to the surface 10S of the base 10. The direction A intersects the normal direction (Z direction) of the surface 10S of the substrate 10. The end portion 14A forms, for example, a flange portion or an overhang. The end portion 14A may be provided on at least a part of the edge 14E of the patterned film 14 as viewed from the Z direction. The end portion 14A has an upper surface 14S extending in the direction A. The upper surface 14S is gradually extended away from the surface 10S of the substrate 10 toward the edge 14E of the pattern film 14. [ The upper surface 14S is, for example, a flat surface. The upper surface 14S may be a curved surface such as a convex surface. A gap is formed between the end portion 14A and the surface 10S. That is, a pocket is formed by the end portion 14A and the surface 10S. The shape of the end portion 14A can be controlled by, for example, adjusting the shape of the lift-off member.

The maximum value of the angle? (Angle formed by the acute angle) formed between the surface 10S of the base 10 and the upper surface 14S of the end portion 14A may be more than 0 degrees and not more than 60 degrees or not more than 45 degrees , Or 10 degrees or less. The angle? Can be measured from a cross-sectional image of the pattern structure 100 by a transmission electron microscope (TEM). When the upper surface 14S is curved, the angle? Is an angle formed by the tangent at the point on the upper surface 14S and the surface 10S of the base 10. Therefore, when the top surface 14S is a curved surface, the value of the angle? Differs depending on the position on the top surface 14S. The angle? Can be controlled, for example, by adjusting the shape of the lift-off member.

3 and 4 are TEM cross-sectional views of a pattern structure according to an embodiment. 3, the upper surface of the end portion of the pattern film is flat. In Fig. 4, the upper surface of the end portion of the pattern film is a convex surface. Figures 3 and 4 show TEM cross-sections at different locations for the same pattern structure. In this embodiment, the pattern film is composed of a plurality of alternately stacked aluminum oxide layers and a plurality of zirconium oxide oxide layers. The thickness of each aluminum oxide layer is 4 nm. The thickness of each zirconium oxide layer is 4 nm. The thickness of the pattern film is 20 nm. The substrate is a glass substrate. The angle? Is calculated, for example, as follows. First, a sample of a pattern structure is manufactured using focused beam processing (FIB processing). Next, a TEM cross-sectional image of the sample is obtained using a transmission electron microscope HF-3300 manufactured by Hitachi High-Technologies Corporation. Next, in the obtained TEM section image, the angle? Formed between the surface of the base material and the upper surface of the end portion of the pattern film is calculated. In this embodiment, the maximum value of the angle? Is 45 degrees or less.

The pattern film 14 may have a body portion 14B connected to the end portion 14A. The main body portion 14B extends along the surface 10S of the base material 10. The thickness of the pattern film 14 may be 10 nm or more, preferably 200 nm or less, but may be 100 nm or less. When the thickness of the pattern film 14 is 200 nm or less, the productivity of the pattern film 14 is improved. The thickness of the pattern film 14 may be constant from the main body portion 14B to the end portion 14A. If the pattern film 14 is thick, the rigidity of the pattern film 14 becomes high, so that the angle? Tends to be small.

At least a part of the edge 14E of the pattern film 14 may have an irregular shape when viewed from the normal direction (Z direction) of the surface 10S of the substrate 10. The edge 14E of the pattern film 14 may have an irregular shape in a portion of 80% or more of the entire length. The irregular shape is formed by peeling off a part of the thin film formed by the atomic layer deposition method and includes, for example, a wavy shape, a zigzag shape, and the like. The edge 14E of the pattern film 14 is deviated from the reference line P at random. The shortest distance between the first point and the second point is D1 on the edge 14E of the pattern film 14 and the path along the edge 14E between the first point and the second point is D2 , D2 / D1 may be 1.1 or more, or may be 2 or less. The width of the end portion 14A of the pattern film 14 in the X direction is determined according to the condition for peeling the thin film. When the peeling force is large, the width of the end portion 14A of the pattern film 14 in the X direction becomes small.

5 is a diagram showing a planar shape of a pattern structure according to an embodiment. The pattern structure of this embodiment is the same as the pattern structure shown in Figs. 3 and 4. 5 is a SEM image measured at a magnification of 30,000 times. 5, the shortest distance D1 (the length of a line segment) between the first point P1 and the second point P2 on the edge of the pattern film is 10 m, and the first point P1 And the path D2 along the edge 14E between the first point P2 and the second point P2 is 14.53 mu m. Therefore, D2 / D1 is 1.45.

The substrate 10 may be, for example, a glass substrate, a silicon substrate, a polymer film, a flexible substrate, or a combination thereof. In the low-temperature process, a polymer film can be used as the substrate 10. As a result, for example, a flexible printed wiring board (FPC) can be manufactured at low cost. The substrate 10 may be a thermosetting film such as a polyimide film, for example, a thermoplastic resin film such as a polypropylene film, or a transparent polyester substrate.

The patterned film 14 may be, for example, a conductor film, a semiconductor film, an insulating film, an inorganic film, an organic film, a nano laminated film, a composite oxide film, a metal oxide film or a combination thereof. The patterned film 14 may be a single layer film or a laminate in which a plurality of first metal oxide films and a plurality of second metal oxide films are alternately stacked. The constituent material of the second metal oxide film is different from the constituent material of the first metal oxide film. When the patterned film 14 contains a metal, examples of such a metal include aluminum, copper, hafnium, ruthenium, tantalum, titanium, tungsten, zinc and zirconium. As the first raw material of the pattern film 14, for example, TMA (Al (CH 3 ) 3 ), TDMAH (Hf [N (CH 3 ) 2 ] 4 ), Ru (C 5 H 4 -C 2 H 5 ) 2, (CH 3) 3 CN = Ta (N (C 2 H 5) 2) 3, TDMAT (Ti [N (CH 3) 2] 4), ((CH 3) 3 CN) 2 W (N (CH 3 ) 2 ) 2 , Zn (C 2 H 5 ) 2 and TDMAZ (Zr [N (CH 3 ) 2 ] 4 ). The patterned film 14 may be an ITO film. The patterned film 14 may be a passivation film made of, for example, SiO 2 or Al 2 O 3 . The patterned film 14 may be a conductor film made of, for example, ZnO semiconductor, IGZO semiconductor or the like.

The pattern structure 100 may be formed of any suitable material such as an integrated circuit, a display, a solar cell, an imaging device, a sensor, a semiconductor device, an electronic device, an optical device, an organic EL device, an inorganic EL device, a thin film transistor (TFT) A printed wiring board, a flexible printed wiring board (FPC), or a combination thereof. In the case of the FPC, a transparent polyester substrate is used as the substrate 10, a wiring of a bit line circuit is used as the pattern film 14, and a word line formed by an inkjet method, a screen printing method, (word line) circuit can be used. In the case of a TFT, the pattern structure 100 may further include a shift register, and the substrate 10 may have a width of 300 mm or more and a length of 2000 mm or more and a large area. In the case of the organic EL device, an organic EL layer can be used as the pattern film 14. [

The end portion 14A of the pattern film 14 does not protrude in the normal direction (Z direction) of the surface 10S of the substrate 10 in the pattern structure 100 according to the present embodiment. Therefore, rising of the end portion 14A of the pattern film 14 is suppressed. As a result, even if another film is provided on the pattern film 14, the influence of the other film is small. For example, even when a functional film such as an anisotropic conductive film (ACF) is provided on the end portion 14A of the pattern film 14, the characteristics of the functional film such as the conductivity of the anisotropic conductive film are hardly deteriorated. In addition, adhesion of the other film to the gap between the end portion 14A and the surface 10S improves the adhesion between the other film and the pattern film 14.

The rising angle of the end portion 14A of the pattern film 14 is further suppressed if the maximum value of the angle? Formed between the surface 10S and the top surface 14S is 60or less.

If at least a part of the edge 14E of the pattern film 14 has an irregular shape as viewed from the normal direction (Z direction) of the surface 10S of the base material 10, for example, The contact area between the other film and at least a part of the edge 14E of the pattern film 14 is increased. Therefore, the adhesion between the other film and the pattern film 14 is improved.

Fig. 6 is a diagram schematically showing each step of the method of manufacturing a pattern structure according to the embodiment. The pattern structure 100 is manufactured, for example, as follows.

(Lift off material forming step)

First, as shown in Fig. 6 (A), the liquid 112 is applied onto the surface 10S of the substrate 10. The liquid 112 includes a constituent material of the lift-off member 12 and a solvent, which will be described later. The application may be carried out by a printing machine such as an inkjet method, a dispenser, a marker, a brush, a pen, a screen printing method, a flat plate printing machine, a plate printing machine (for example, a gravure printing machine) . The contact angle alpha between the surface 10S of the substrate 10 and the liquid 112 is, for example, 10 to 60 degrees. The contact angle can be controlled by adjusting the solid fraction of the liquid 112, the surface tension of the liquid 112, the kind of the constituent material of the substrate 10 and the liquid 112, Do. The solid fraction of the liquid 112 is, for example, 5 to 50 wt% based on the total amount of the liquid 112. The surface tension of the liquid 112 is, for example, 15 to 50 mN / m.

Next, as shown in Fig. 6 (B), the lift off material 12 is formed on the surface 10S of the substrate 10 by drying the liquid 112. Then, as shown in Fig. The angle? Formed by the surface 10S and the surface 12S at the location where the surface 10S of the substrate 10 and the surface 12S of the lift-off member 12 are in contact with each other is the same as the angle?. The angle? Is, for example, about half the contact angle? When the solid fraction of the liquid 112 is 50 wt%. The angle beta can be controlled by adjusting the solid fraction of the liquid 112.

The lift off material 12 may be one which can be dissolved in a solvent. In this case, the lift off material 12 can be easily removed by the solvent. Examples of the solvent include water and organic solvents. The lift-off material 12 may be, for example, a cellulose-based material (such as carboxy cellulose or hydroxyethylcellulose), a synthetic polymer material (such as sodium polyacrylate, polyacrylamide, polyvinyl alcohol, polyethyleneimine, polyethylene oxide, Ralidon) may be used. The lift off material 12 may be made of a material that does not require a curing process. The height of the lift-off member 12 from the surface 10S of the substrate 10 is, for example, 10 nm to 10 탆.

(Film forming process)

Next, as shown in Fig. 6C, the functional film 114 is formed on the base material 10 and the lift-off material 12 by atomic layer deposition. For example, first, the first raw material of the functional film 114 is supplied onto the substrate 10 and the lift-off material 12, and then the purge gas is supplied. Thereafter, a second raw material such as an oxidizing agent is supplied onto the base material 10 and the lift-off material 12, and then a purge gas is supplied. By repeating this cycle, the functional film 114 is formed.

By using the atomic layer deposition method, it is possible to increase the uniformity of the film thickness of the functional film 114 over a wide area, and to improve the film thickness of the functional film 114 of a stoichiometric composition having a three-dimensional conformality. (114) can be formed. In addition, the film thickness of the functional film 114 can be controlled with high accuracy. In addition, even when dust particles are present, since the functional film 114 is formed at a position where the dust particles are shadowed, it is difficult to obtain the influence of the dust particles relatively.

(Pattern forming step)

6 (D), the lift-off material 12 is removed by a lift-off method to remove the pattern film 14 from the functional film 114 on the base material 10, . Thus, the pattern structure 100 is manufactured. The lift off material 12 is a material having a coefficient of thermal expansion (thermal expansion coefficient) between the lift off material 12 and the substrate 10, for example, a solvent such as water, ultrasonic waves, water jets, dry ice blast, physical force Or the laser light irradiation. When the difference in thermal expansion coefficient between the lift off material 12 and the substrate 10 is utilized, the lift off material 12 is solubilized by heat or light (e.g., ultraviolet light) (12) can be removed. After the pattern film 14 is formed, the process may be returned to the lift-off remanufacturing process. Thus, by repeating pattern formation, a plurality of pattern films 14 can be stacked on the base material 10. The plurality of pattern films 14 may be different from each other. The pattern film 14 may be a wiring pattern.

7 is a diagram schematically showing a pattern structure according to another embodiment. The pattern structure 200 shown in Fig. 7 may include an anisotropic conductive film 20 and a flexible printed wiring board 30 in addition to the substrate 10 and the pattern film 14. [ The anisotropic conductive film 20 includes a resin part 24 and conductive particles 22 dispersed in the resin part 24. [ The flexible printed wiring board 30 includes a substrate 32 and a wiring 34 provided on the substrate 32. [ In the present embodiment, the base material 10 has a base material body 16 and wirings 18 provided on the base material body 16. The anisotropic conductive film 20 is disposed between the wiring 34 and the wiring 18. [ The end portion 14A of the pattern film 14 is disposed on the wiring 18 and embedded in the anisotropic conductive film 20. [

The wirings 18 and 34 are, for example, gold (or gold / nickel) plated copper wiring. The wirings 18 and 34 are electrically connected to each other by the conductive particles 22 of the anisotropic conductive film 20. The substrate body 16 and the substrate 32 are, for example, glass substrates or polymer films.

The same effect as that of the pattern structure 100 is obtained in the pattern structure 200 as well. In the pattern structure 200, the conductivity of the anisotropic conductive film 20 hardly deteriorates near the end portion 14A of the pattern film 14. [ Adhesion between the anisotropic conductive film 20 and the pattern film 14 can be improved by allowing the anisotropic conductive film 20 to enter the gap between the end portion 14A and the wiring 18. [ The anisotropic conductive film 20 and the edge 14E of the pattern film 14 are formed so that at least a part of the edge 14E of the pattern film 14 has an irregular shape when viewed from the normal direction of the surface 10S of the base material 10. [ ) Is increased. Therefore, the adhesion between the anisotropic conductive film 20 and the pattern film 14 is further improved.

Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the above embodiments.

Claims (3)

A base material,
A pattern film formed by an atomic layer deposition method on a surface of the substrate,
Wherein the pattern film has an end inclined with respect to the surface of the base material and projecting in a direction crossing the normal direction of the surface of the base material. The method according to claim 1,
The end portion having an upper surface extending in a direction in which the end portion protrudes,
Wherein a maximum value of the angle between the surface of the substrate and the upper surface of the end portion is greater than 0 deg. And 60 deg. Or less. The method according to claim 1 or 2,
Wherein at least a part of an edge of the pattern film has an irregular shape when viewed from the normal direction of the surface of the base material.
KR1020150112449A 2015-08-10 2015-08-10 Pattern structure KR20170018609A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007335727A (en) 2006-06-16 2007-12-27 Tdk Corp Method of manufacturing magnetoresistance effect element and thin film magnetic head and method of manufacturing same
JP2008547150A (en) 2005-06-24 2008-12-25 ビーコ・インスツルメンツ・インコーポレーテッド Manufacturing method of read sensor for read / write head of mass storage device
JP2009157977A (en) 2007-12-26 2009-07-16 Hitachi Global Storage Technologies Netherlands Bv Method for manufacturing magnetic head
JP2011040656A (en) 2009-08-17 2011-02-24 Nippon Telegr & Teleph Corp <Ntt> Method of forming microstructure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008547150A (en) 2005-06-24 2008-12-25 ビーコ・インスツルメンツ・インコーポレーテッド Manufacturing method of read sensor for read / write head of mass storage device
JP2007335727A (en) 2006-06-16 2007-12-27 Tdk Corp Method of manufacturing magnetoresistance effect element and thin film magnetic head and method of manufacturing same
JP2009157977A (en) 2007-12-26 2009-07-16 Hitachi Global Storage Technologies Netherlands Bv Method for manufacturing magnetic head
JP2011040656A (en) 2009-08-17 2011-02-24 Nippon Telegr & Teleph Corp <Ntt> Method of forming microstructure

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