KR20170017615A

KR20170017615A - Assembling method of quntuam dot assembly for display

Info

Publication number: KR20170017615A
Application number: KR1020150111795A
Authority: KR
Inventors: 최대근; 정소희; 이지혜; 정주연; 전소희; 최준혁; 정준호
Original assignee: 한국기계연구원
Priority date: 2015-08-07
Filing date: 2015-08-07
Publication date: 2017-02-15
Also published as: KR101803523B1

Abstract

The present invention relates to a method of collecting quantum dots used in a display in which interference is minimized by forming quantum dots having the same color into one aggregate. According to the present invention, the method of collecting the quantum dots used in the display includes fabricating a double tube including an inner tube and an outer tube; receiving a quantum dot ink having quantum dots dispersed in a colloidal dispersion in the inner tube; receiving an aqueous solution of water comprising a surfactant in the outer tube; generating droplets of the quantum dot ink by applying pressure to the inner tube and the outer tube, respectively, to spray the received quantum dot ink and water; and curing the droplet-shaped quantum dot ink by passing the quantum dot ink through an ultraviolet region. By forming quantum dots having the same color into one aggregate to minimize the interference, the energy dispersion of the quantum dots due to the color interference can be prevented, thereby improving the energy efficiency and minimizing the interference so that the color blinking of the quantum dots due to interference can be prevented.

Description

ASSEMBLING METHOD OF QUNTUAM DOT ASSEMBLY FOR DISPLAY [0002]

The present invention relates to a method of collecting quantum dots used in a display, and more particularly, to a method of collecting quantum dots used in a display in which interference is minimized by forming quantum dots having the same color as one aggregate.

Quantum dots (QDs) are semiconductor nanoparticles whose energy bandgap varies with size. Quantum dots have a unique electrical, optical, and mechanical properties that are not exhibited by quantum mechanical phenomena due to spatially limited electron movement in nanometer sized materials. Particularly, when the size of the quantum dots becomes smaller than the radius of the exciton, which is a state in which electrons and holes are coupled by the coulomb force, the energy level is quantized by the quantum confinement effect and the particle size becomes small The larger the energy band gap becomes. The approximate size of the excitons is between 2 nm and 10 nm.

The quantum dots can vary the energy bandgap from ultraviolet to infrared beyond the visible range by controlling size, shape and chemical composition. The quantum dot is promising as a light source for next generation display and illumination because electron has transitioned between quantized energy levels, and emission line width is much narrower than other phosphors and has excellent color purity.

Since quantum dots can easily control emission wavelengths and have high optical efficiency and light stability, they are actively studied not only for light emitting devices but also for solar cells, photodiodes, and biomarkers.

On the other hand, since a liquid crystal display (LCD) can not emit light by itself, a backlight serving as a light source is essential. An LCD equipped with a conventional light emitting diode (LED) backlight unit (BLU) has three types of red (R), green (G), and blue (B) LED combination. In recent years, however, the most efficient blue LED has been coated with a yellow phosphor to realize white.

LCD has improved the performance of LED backlight used in conventional LCDs by using QDs. Quantum dots emit self-luminescence when voltage is applied, such as OLED (Organic Light Emitting Diode), or absorb light having the same wavelength, and emit again. Quantum dots absorb the longer wavelength as the particle size becomes smaller, and absorb the shorter wavelength as the particle size increases. For example, when the size of a quantum dot is small, it emits a visible light having a short wavelength such as green. As the size increases, it emits a visible light having a long wavelength such as red. For example, a quantum dot having a size of 2 nm displays blue, a quantum dot having a size of 2.5 nm emits green light, a quantum dot having a wavelength of 3 nm emits green light, a quantum dot having a wavelength of 5 nm emits orange light, and a quantum dot having a size of 6 nm emits red . That is, the quantum dots can be configured to emit light in different colors.

There are two ways to commercialize quantum dots. First, there are a photoluminescence (PL) that emits light through a light excitation and an electroluminescence (EL) that electrically excites the light. The dual PL is a technology (QD-LCD) that dramatically improves the color gamut and color gamut of an LCD by adding QDs to the LED backlight (BLU) on the LCD.

Fig. 1 is a diagram showing the division of the quantum dots in the PL according to the method of inserting quantum dots. As shown in FIG. 1, the PL can be divided into three ways according to the method of inserting the quantum dots.

First, an on-chip method in which orange and red quantum dots are placed in a blue LED package,

Second, the edge optic method in which quantum dots are placed in a glass tube and excited by a blue LED on the side to emit light,

Third, there is a film method in which quantum dots are dispersed in a polymer film to emit light by an LED back light emitting unit.

Currently, the third type of film method is preferred in a manner suitable for mass production.

FIG. 2 is a diagram showing a state in which quantum dots generally aggregate. FIG. In the above-mentioned PL, at least two or more quantum dots are used in the quantum dot display. For example, in both on-chip, rail, and film methods of PL, two or more (green and red) quantum dots must be used to emit white to blue LEDs.

In this case, it is important that the different types of quantum dots to be coated are uniformly spaced apart from each other by a predetermined distance or more (usually, 10 nm or more). Usually, two kinds of quantum dots are randomly mixed and coated. It may happen that aggregation occurs closely. This causes a problem that display efficiency is degraded.

That is, when the quantum dots of different kinds are very close to each other, energy for emitting light by absorbing light of a short wavelength is transmitted to quantum dots having a low energy level adjacent to the quantum dots. For example, if the energy received by a green quantum dot, which receives blue LED energy, can not be used for emission of all green quantum dots, energy is dispersed when energy is transmitted to an adjacent red quantum dots.

On the other hand, quantum dot films, illumination devices, and illumination methods disclosed in Prior Art Korean Patent Laid-Open Publication No. 10-2013-0120486 (hereinafter referred to as prior art) filed by NANOSIS, Inc. as a prior art are disclosed. Prior art discloses a method of coating quantum dots in order to improve the efficiency and optical characteristics in a quantum dot-based illumination device. However, as for the problem of energy dispersion caused by interference between quantum dots having different colors, Is not disclosed.

Korean Patent Publication No. 10-2013-0120486 (Entitled " Quantum dot films, illumination devices, and illumination methods)

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and it is an object of the present invention to provide a method and apparatus for forming quantum dots having the same color, It is an object of the present invention to provide an aggregation and aggregation method.

According to another aspect of the present invention, there is provided a method of assembling a quantum dot cluster for use in a display, the method comprising the steps of: preparing a dual tube composed of an inner tube and an outer tube; Receiving a quantum dot ink having quantum dots dispersed in a colloidal dispersion in the inner tube; Receiving an aqueous solution of water comprising a surfactant in the outer tube; Generating droplets of the quantum dot ink by applying pressure to the inner tube and the outer tube, respectively, and jetting the received quantum dot ink and water, respectively; And curing the droplet-form quantum dot ink through an ultraviolet region.

The droplet may have a size ranging from 30 nm to 300 μm.

According to another aspect of the present invention, there is provided a method of assembling a quantum dot cluster used in a display, the method comprising: receiving a quantum dot ink having quantum dots dispersed in a colloidal dispersion in an ink jet cartridge; Jetting the received quantum dot ink onto a substrate in a predetermined size form through a nozzle; Exposing the ejected quantum dot ink to ultraviolet light to cure the ejected quantum dot ink; And separating the quantum dot ink from the substrate.

The size of the quantum dot ink of the constant size may be in the range of 30 nm to 300 um.

According to another aspect of the present invention, there is provided a method of assembling a quantum dot cluster used in a display, the method comprising: receiving a quantum dot ink having quantum dots dispersed in a colloidal dispersion in an ink jet cartridge; Jetting the quantum dot ink into an aqueous solution containing a surfactant in a predetermined size; Irradiating the quantum dot ink with ultraviolet light to cure the quantum dot ink; And withdrawing the quantum dots from the aqueous solution of water.

According to an aspect of the present invention, there is provided a method of assembling a quantum dot cluster used in a display, comprising: preparing a substrate; Forming a pattern on the substrate; Applying a first quantum dot ink having quantum dots dispersed in a colloidal dispersion according to the formed pattern; Irradiating the patterned first quantum dot ink with ultraviolet light to cure the patterned first quantum dot ink; Removing the pattern; Applying a second quantum dot ink having a color different from the monochromatic quantum dot to the removed pattern; And irradiating the patterned second quantum dot ink with ultraviolet light to cure the patterned second quantum dot ink.

Forming the pattern comprises: applying a photoresist to the substrate; Irradiating the photoresist with light to develop the pattern; And removing the light-irradiated portion with a developing solution to form a pattern.

The step of removing the pattern may be configured to remove the pattern using any one of dissolving the pattern in the solvent or burning the pattern.

According to an aspect of the present invention, there is provided a method of assembling a quantum dot cluster used in a display, comprising: preparing a substrate; Forming a pattern on the substrate; Applying a first quantum dot ink having quantum dots dispersed in a colloidal dispersion to a pattern formed on the substrate; Transferring the polymer to the quantum dot ink; Irradiating the patterned first quantum dot ink and the first polymer with ultraviolet light to cure the patterned first quantum dot ink and the first polymer; Removing the pattern; Applying a second quantum dot ink having a color different from that of the first quantum dot ink to a position of the removed pattern; Transferring the second polymer to the second quantum dot ink; And curing the patterned second quantum dot ink and the polymer by irradiating ultraviolet light.

According to an aspect of the present invention, there is provided a method of assembling a quantum dot cluster used in a display, comprising: preparing a substrate; Forming a pattern on the substrate; Applying a first quantum dot ink having quantum dots dispersed in a colloidal dispersion to a pattern formed on the substrate; Transferring the polymer to the first quantum dot ink; Irradiating the patterned first quantum dot ink and the polymer with ultraviolet light to cure the patterned first quantum dot ink and the polymer; Removing the pattern; Applying a second quantum dot ink having a color different from that of the first quantum dot ink to a position of the removed pattern; Transferring the polymer to the ambience second quantum dot ink; And curing the second quantum dot ink and the polymer by irradiating ultraviolet rays.

According to an aspect of the present invention, there is provided a method of assembling a quantum dot cluster used in a display, comprising: preparing a substrate; A pattern forming step of forming a pattern on the substrate; Applying a first quantum dot resin dispersed in a polymer and a colloidal dispersion to a pattern formed on the substrate; Irradiating the first quantum dot resin with ultraviolet light to cure the first quantum dot resin; Removing the pattern; Applying a second quantum dot resin having a color different from that of the first quantum dot resin to a position of the removed pattern; And curing the second quantum dot ink and the polymer by irradiating ultraviolet rays.

According to an aspect of the present invention, there is provided a method of assembling a quantum dot cluster used in a display, comprising: diffusing quantum dots into an organic solvent; Adding an emulsifier to the organic solvent and dispersing the organic solvent; And forming a spherical quantum dot aggregate by solidifying the quantum dots according to an increase in the concentration of the organic solvent.

The quantum dot aggregation and aggregation method used in the display according to the present invention by the above solution means that the quantum dots having the same color are formed into one aggregate to minimize the interference so that the energy of the quantum dots is not dispersed by the color interference The energy efficiency is improved.

The quantum dot aggregation and aggregation method used in the display according to the present invention by the above solution means that the quantum dots having the same color are formed into one aggregate to minimize the interference so that the color of the quantum dots can be reduced by the flickering phenomenon .

Brief Description of Drawings [Fig. 1] Fig.
2 is a view showing a state in which quantum dots generally aggregate.
FIG. 3 illustrates the construction of quantum dots as an aggregate according to an embodiment of the present invention. FIG.
FIG. 4 illustrates a method of fabricating quantum dot aggregates of uniform size according to an embodiment of the present invention. FIG.
5 is a view illustrating a process of manufacturing a quantum dot aggregate of uniform size according to another embodiment of the present invention.
6 is a view showing a process for producing a quantum dot aggregate of uniform size according to another embodiment of the present invention.
7 is a view showing a process of manufacturing a quantum dot aggregate of uniform size according to another embodiment of the present invention.
8 is a view showing a process for producing a quantum dot cluster according to another embodiment of the present invention.
9 is a view showing a process for manufacturing a quantum dot cluster according to another embodiment of the present invention.
10 is a view showing a process for producing a quantum dot cluster according to another embodiment of the present invention.
11 is a view showing a process for producing a quantum dot aggregate of uniform size according to another embodiment of the present invention.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings showing embodiments of the present invention.

FIG. 3 is a diagram illustrating the construction of quantum dots according to an embodiment of the present invention. 3 (a) is composed of a red quantum dot aggregate 10 absorbing a long wavelength. 3 (b) is composed of a green quantum dot aggregate 20 absorbing a short wavelength. The quantum dot may be a Group II-IV, Group III-IV, or Group V quantum dot or a mixture thereof. The quantum dot includes but is not limited to at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, InP and InAs. In some cases, a mixture of two or more of the listed quantum dots may be used. For example, a quantum dot mixture in which two or more quantum dots exist in a simple mixed state, or a crystal having a crystal structure having a core-shell structure or a crystal structure having a gradient structure, Mixed crystals in which the crystals are partially separated, or two or more kinds of nanocrystalline compounds may be used. For example, the quantum dot may have a core structure that allows holes to escape to the outside, or may have a core / shell structure including a core and a shell covering the core.

The core may include, but is not limited to, one or more materials selected from the group consisting of CdSe, CdS, ZnS, ZnSe, CdTe, CdSeTe, CdZnS, PbSe, AgInZnS and ZnO. The shell may include, but is not limited to, one or more materials selected from the group consisting of CdSe, ZnSe, ZnS, ZnTe, CdTe, PbS, TiO, SrSe, and HgSe.

By applying the red quantum dot aggregate 10 and the green quantum dot aggregate 20 to the on-chip method, side optical method, and film method of the PL described above, interference can be minimized. Although the red quantum dot aggregate 10 and the green quantum dot aggregate 20 are described in the drawings, as described above, the quantum dot can emit various colors depending on the length of the wavelength absorbed, The quantum dots can be manufactured by using a variety of materials as described above, and it will be easily understood by those skilled in the art.

(Example 1)

FIG. 4 is a view illustrating a method of manufacturing a quantum dot aggregate of uniform size according to an embodiment of the present invention. Referring to FIG. In FIG. 4, the double tube 30 is composed of an inner tube 32 and an outer tube 34. The inside diameter of the inner tube 32 may be several micrometers to several hundred micrometers, and the inner tube and the inner tube end may be smoothly finished. The double tube 30 is manufactured by inserting a small-sized inner tube 32 into a large-sized outer tube 34 and fixing it without leakage by using a light-curable liquid adhesive or by other methods. At this time, the inner tube 32 and the outer tube 34 have separate inlets, and the inlet of the inner tube 32 is supplied with a solution (hereinafter abbreviated as quantum dot ink) mixed with quantum dots of the same color together with the colloidal dispersion And the inlet of the outer tube 34 is connected to a second feeder 50 which supplies water comprising a surfactant. At this time, the quantum dot uses a quantum dot emitting green light having a size of 2.5 nm.

First, in the dripping mode, the droplet 36 is created by balancing the capillary force given by the drag force and the interfacial tension due to the water flow. The size of the droplet 36 formed is mainly determined by the inner diameter of the inner tube 32 and the flow rate of water flowing through the outer tube 34. The size of the droplet 36 is preferably 30 nm to 300 μm .

The larger the inner diameter of the inner tube 32 of the double tube 30 and the lower the flow rate of water, the larger the droplet 36 is formed. Meanwhile, the flow rate of the quantum dot ink determines the formation period of the droplet 36, but does not affect the size of the droplet 36. Therefore, in order to make droplets of the same size at a higher speed, it is only necessary to increase the flow rate of the quantum dot ink while maintaining the flow rate of water.

However, as the flow rate of the quantum dot ink approaches the flow rate of water, the mechanism of droplet formation changes from the drop mode to the jetting mode. The ejection mode refers to a case in which a colloidal dispersion is ejected in a cylinder shape, wherein the instability of interfacial energy causes the colloidal dispersion to break into a cylinder shape. This is a phenomenon known as Plateau-Rayleigh instability. Therefore, the first feeding device 40 should appropriately adjust the flow rate of the quantum dot ink to be maintained in the dropping mode.

The quantum dot ink flows through the ultraviolet lamp 38 while flowing in the form of the droplet 36 in the form of the droplet 36, and thus the quantum dot ink 36 is solidified while maintaining the droplet state. At this time, the solidified quantum dot aggregate (20) is solidified into a coated state by the colloidal dispersion in the state that the quantum dot particles having the same characteristics are formed in the face centered cubic structure. On the other hand, the quantum dot aggregate 20 having the same characteristics described above absorbs the same wavelength and emits the same color. Therefore, the quantum dot aggregate 10, 20 having the same characteristics (size) emits the same color. Although the process of manufacturing green quantum dot aggregate 20 is described in Embodiment 1, those skilled in the art will readily understand that quantum dot aggregates other than green can be manufactured in the same manner.

(Example 2)

FIG. 5 is a view illustrating a process of manufacturing a quantum dot aggregate having a uniform size according to another embodiment of the present invention.

As shown in FIG. 5, a single-color quantum dot ink is accommodated in the inkjet cartridge 60. The quantum dot ink may be a liquid in which quantum dots are uniformly dispersed in a colloidal dispersion. In the second embodiment, a quantum dot having a size of 2.5 nm emitting green light will be described.

And the received quantum dot ink is ejected onto the substrate 64 in a constant size form. The size of the quantum dot ink 63 ejected onto the substrate 64 is formed to be 30 nm to 300 nm. Preferably, the diameter of the nozzle is in the range of several nanometers to several hundreds of micrometers in accordance with the size of the droplet to be formed.

The quantum dot ink 63 is jetted through the nozzle 62 to a predetermined size on the substrate 64 to form the quantum dot ink 63 into a semicircular or lens shape having a constant size. The substrate 64 may be made of silicon (Si) crystal, and may be a glass substrate or a substrate made of synthetic resin.

The injected quantum dot ink 63 is exposed to ultraviolet rays to be cured to produce a quantum dot cluster 20. Although the step of producing green quantum dot aggregate 20 is described in the second embodiment, those skilled in the art will readily understand that quantum dot aggregates other than green can be manufactured in the same manner.

(Example 3)

FIG. 6 is a view illustrating a process for manufacturing a quantum dot aggregate of uniform size according to another embodiment of the present invention.

And accepts the single-color quantum dot ink 63 in the inkjet cartridge 60 as shown in Fig. In this embodiment, an example of a quantum dot having a size of 2.5 nm which emits green light will be described.

The quantum dot ink 63 is injected into an aqueous solution 65 containing a surfactant in a predetermined size.

The size of the constantly formed quantum dot ink 63 in the water aqueous solution 65 is formed to be 30 nm to 300 μm. Preferably, the diameter of the nozzle is in the range of several nanometers to several hundreds of micrometers in accordance with the size of the droplet to be formed.

The quantum dots are jetted through a nozzle to a size of a predetermined droplet size in an aqueous solution (65) containing the surfactant to eject the quantum dot ink (63) in the form of droplets of a certain size.

The quantum dot ink 63 impregnated in the water aqueous solution 65 is exposed to ultraviolet rays and cured to produce the quantum dot cluster 20. [ The generated quantum dot aggregate (20) is recovered from the aqueous solution (65).

In the third embodiment described above, the process for producing green quantum dot aggregate 20 has been described. However, a quantum dot aggregate other than green may be produced in the same manner. In the case of Example 3, other quantum dots may be mixed to generate quantum dot aggregates in a state where quantum dots are mixed.

(Example 4)

7 is a view illustrating a process for producing a uniform quantum dot cluster according to another embodiment of the present invention.

First, a substrate 64 is provided. The substrate 64 may be a wafer composed of silicon crystals, and may be a glass substrate or a substrate made of a synthetic resin. Preferably, the substrate is comprised of silicon crystals.

A pattern 72 is formed on the substrate 64 provided as shown in Fig. 7 (a). The pattern is formed by applying a photoresist to the substrate, irradiating the photoresist with light, and removing the irradiated portion with a developing solution. The pattern 72 may be formed in a predetermined shape including a circular pattern, or may include other shapes including elliptical and polygonal shapes. A portion other than the portion where the pattern 72 is formed is removed with a developing solution to form a pattern 72 which becomes a mold.

As shown in FIG. 7 (b), a monochromatic quantum dot ink is applied to a mold formed by the pattern 72 to form a circular, elliptical or polygonal quantum dot pattern 74. The quantum dot pattern 74 is irradiated with ultraviolet rays to cure the quantum dot pattern 74. In this embodiment, an example of a quantum dot having a size of 2.5 nm which emits green light will be described.

The pattern 72 used as the mold is removed. The removal of the pattern 72 used as the mold may be accomplished by any of the methods of dissolving the photoresist used in the pattern 72 in a polar solvent such as alcohol or burning the pattern 72 Can be removed.

The quantum dot pattern 74 of a circular, elliptical or polygonal shape can be generated by removing the quantum dot pattern 74 as shown in FIG. 7 (c). The size of the quantum dot cluster 20 thus formed is configured to be 30 nm to 300 nm.

(Example 5)

8 is a view illustrating a process for fabricating a quantum dot cluster according to another embodiment of the present invention.

First, a substrate 64 is provided. The substrate 64 may be a wafer composed of a silicon crystal, and may be a glass substrate or a substrate made of a synthetic resin. Preferably, the substrate 64 is comprised of silicon crystals.

A pattern 72 is formed on the substrate 64 as shown in FIG. 8 (a). The pattern 72 is formed by applying a photoresist to the substrate, irradiating the photoresist with light, and removing the irradiated portion with a developing solution. The pattern 72 may be formed in a predetermined shape including a circular pattern, or may include other elliptical and polygonal patterns. Or may be formed in a straight line. A portion other than the portion where the pattern 72 is formed is removed with a developing solution to form a circular, elliptical, polygonal, or straight pattern 72.

The quantum dot pattern 74 is formed by applying monochromatic quantum dot ink to a die formed by the pattern 72 as shown in FIG. 8 (b).

The pattern 72 used as a mold is removed as shown in FIG. 8 (c). Removal of the pattern 72 can be accomplished by either dissolving the pattern 72 in a solvent such as alcohol, which is a polarizable solution, or by burning the pattern. The quantum dot pattern 74 is irradiated with ultraviolet rays to cure the quantum dot pattern 74. On the other hand, the quantum dot pattern 74 may be a quantum dot emitting green of 2.5 nm in size.

The other color quantum dot pattern 76 having a color different from that of the quantum dot pattern 74 previously formed in the removed pattern 72 is applied as shown in FIG. 8 (d) Quantum dot aggregate 22 can be generated. On the other hand, the other color quantum dot pattern 76 may be an aggregate of quantum dots emitting red light having a size of 6 nm.

After removing the pattern of the monochromatic quantum dot and removing the pattern, a process of forming a pattern at a point where no quantum dots are formed and applying a quantum dot of another color may be repeated to generate a quantum dot cluster which emits various colors.

(Example 6)

9 is a view showing a process of manufacturing a quantum dot cluster according to another embodiment of the present invention.

A substrate 64 is provided. The substrate 64 may be a wafer composed of silicon crystals, and may be a glass substrate or a substrate made of a synthetic resin. Preferably, the substrate is comprised of silicon crystals.

A pattern 72 is formed on the substrate 64 as shown in FIG. 9 (a). The pattern 72 is formed by applying a photoresist to the substrate 64, irradiating the photoresist with light, and removing the irradiated portion with a developing solution. The pattern 72 may be configured to contain a circular pattern or may be configured to contain other elliptical and polygonal shapes. Or the pattern 72 may be formed in a straight shape.

A portion other than the portion where the pattern 64 is formed is removed with a developer to form a pattern 64 having a circular shape, an elliptical shape, a polygon, or a pattern 64 formed of a straight pattern, Dot quantum dot ink.

The polymer is transferred to the pattern 72 filled with the formed quantum dot ink. The polymer is irradiated with pressure and ultraviolet rays to form a quantum dot pattern 74 coated with a colloid solution and a polymer. Polymers can be used in various applications such as UV Resin, Polyethylene Terephthalate (PET), Polycarbonate, PMMA, PE, Polypropylene, PES, PEN, Polyimide ) Or the like can be used. The polymer and the quantum dot ink can be cured together, preferably by UV irradiation using UV resin. In the case where any one of PET, PC, PMMA, PE, PP, PES, PEN and PI is used, the polymer can be cured by a curing method suitable for the characteristics of each polymer, for example, cooling. In this embodiment, the case of using a UV resin as a polymer will be described.

The polymer 78 is transferred to the quantum dot pattern 74 to form the polymer quantum dot pattern 80. [

The pattern 72 used as a mold is removed as shown in Fig. 9C. The removal of the pattern 72 may be accomplished by either dissolving the pattern 72 in a solvent such as alcohol, which is a polarizable solution, or by burning the pattern 72.

The color quantum dot pattern different from the polymer quantum dot pattern 80 is applied to the position where the pattern used as the mold is removed as shown in FIG. 9 (d). The polymer is transferred to another color quantum dot pattern. The polymer and the quantum dot ink are pressed and irradiated with ultraviolet light to generate another color polymer quantum dots pattern 82. [

The quantum dot aggregate 24 of two or more colors formed on the substrate is thus formed. On the other hand, another color polymer quantum dots pattern 82 may be an aggregate of quantum dots emitting red light having a size of 6 nm.

(Example 7)

10 is a view showing a process of manufacturing a quantum dot cluster according to another embodiment of the present invention.

A substrate 64 is provided. The substrate 64 may be a wafer composed of silicon crystals, and may be a glass substrate or a substrate made of a synthetic resin. Preferably, the substrate 64 is comprised of silicon crystals.

A pattern 72 is formed on the substrate 64 as shown in FIG. 10 (a). The pattern 64 is formed by applying a photoresist to the substrate 64, irradiating the photoresist with light, and removing the irradiated portion with a developing solution. The pattern 64 may be configured to have a constant shape including a circular shape, or may have other shapes including an elliptical shape and a polygonal shape. Or the pattern 64 may be formed in a straight shape. A portion other than the portion where the pattern 64 is formed is removed with a developing solution to form a pattern 64 having a circular shape, an elliptical shape, a polygonal shape, or a straight shape.

The monochromatic quantum dot pattern 80 dispersed in the polymer is transferred to the mold formed by the pattern 64. [ The quantum dot pattern 80 dispersed in the polymer can be a solution in which quantum dot ink is dispersed in a commercial polymer such as UV resin, PET, PC, PMMA, PE, PP, PES, PEN and PI. In this embodiment, the case of using a UV resin as a polymer will be described.

Remove patterns used as molds. The removal of the pattern can be performed by either dissolving the pattern in a solvent such as alcohol, which is a polarizing solution, or burning the pattern.

A resin in which quantum dots of a color different from the monochromatic quantum dot are dispersed in the polymer is transferred to a position where the pattern 72 is removed. The polymer is pressurized and irradiated with ultraviolet light to generate another color polymer quantum dots pattern 82. [

The quantum dot aggregate 24 of two or more colors formed on the substrate is thus formed.

On the other hand, after the monochromatic quantum dots are applied and the pattern is removed, a pattern is formed at a point where no quantum dots are formed, and a process of transferring the resin mixed with the quantum dots ink of another color to the polymer is repeated to obtain quantum dots An aggregate can also be created.

(Example 8)

11 is a view showing a process for producing a quantum dot aggregate of uniform size according to another embodiment of the present invention.

By chemically aggregating the particles, the cation and anion concentration of the solution are changed and the dispersion stability of the solution is lowered, so that the quantum dots aggregate together.

The quantum dots are diffused on the organic solvent 110 as shown in FIG. 11 (a).

The quantum dot aggregate 20 is obtained by adding and dispersing a predetermined amount of the emulsifier 120 to the organic solvent 110 having the quantum dots as shown in FIG. 11 (b).

In the first step, the quantum dots are dispersed in the emulsion solvent 110 as shown in FIG. 11 (a).

In the second step, the emulsifier 120 is mixed to allow the emulsion to diffuse over an aqueous solution having a low affinity for the quantum dots. When the emulsion is diffused, coacervation of the quantum dots occurs with the emulsifier 120 as the concentration of the organic solvent 110 increases at the interface.

11 (c), solidification of the polymer occurs to form a spherical quantum dot cluster 20, and these processes are instantaneous and spontaneous. The size of the quantum dot aggregate (20) varies depending on the stabilizer, the kind of polymer, and the dispersing method. At this time, a surfactant (amphiphilic block copolymer or the like) may be added to selectively aggregate the particles while self-assembling.

The red quantum aggregate 10 and the green quantum dot aggregate 20 have been described in the above embodiments. However, the quantum aggregate 10 and the green quantum dot aggregate 20, which emit colors other than the red quantum aggregate 10 and the green quantum dot aggregate 20, It will be understood by those skilled in the art that the present invention can be implemented in various ways.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Ranges and equivalents thereof are to be construed as being included within the scope of the present invention.

10, 20, 22, 24: Quantum dot aggregate
30: double tube 32: inner tube \
34: outer tube 36: droplet
38: ultraviolet lamp 40: first supply device
50: second supply device 60: ink jet cartridge
62: nozzle 63: quantum dot ink
64: substrate 72: pattern
74, 76: Quantum dot pattern 78: Polymer
80 and 82: polymer quantum dots pattern 110: organic solvent
120: Emulsifier

Claims

Fabricating a dual tube comprised of an inner tube and an outer tube;
Receiving a quantum dot ink having quantum dots dispersed in a colloidal dispersion in the inner tube;
Receiving an aqueous solution of water comprising a surfactant in the outer tube;
Generating droplets of the quantum dot ink by applying pressure to the inner tube and the outer tube, respectively, and jetting the received quantum dot ink and water, respectively; And
And curing the droplet-form quantum dot ink through an ultraviolet region. &Lt; RTI ID = 0.0 > 8. < / RTI >

The method according to claim 1,
The size of the droplet,
Wherein the quantum dot is formed in a size of 30 nm to 300 um.

Receiving a quantum dot ink having quantum dots dispersed in a colloidal dispersion in an inkjet cartridge;
Jetting the received quantum dot ink onto a substrate in a predetermined size form through a nozzle;
Exposing the ejected quantum dot ink to ultraviolet light to cure the ejected quantum dot ink; And
And separating the quantum dot ink from the substrate.

The method according to claim 3, wherein the size of the quantum dot ink of the constant size
Wherein the quantum dot is formed in a size of 30 nm to 300 um.

Receiving a quantum dot ink having quantum dots dispersed in a colloidal dispersion in an inkjet cartridge;
Jetting the quantum dot ink into an aqueous solution containing a surfactant in a predetermined size;
Irradiating the quantum dot ink with ultraviolet light to cure the quantum dot ink; And
And withdrawing the quantum dots from the aqueous solution of water.

6. The method according to claim 5, wherein the size of the quantum dot ink of the constant size
Wherein the quantum dot is formed in a size of 30 nm to 300 um.

Providing a substrate;
Forming a pattern on the substrate;
Applying a first quantum dot ink having quantum dots dispersed in a colloidal dispersion according to the formed pattern;
Irradiating the patterned first quantum dot ink with ultraviolet light to cure the patterned first quantum dot ink;
Removing the pattern;
Applying a second quantum dot ink having a color different from the monochromatic quantum dot to the removed pattern; And
And irradiating the patterned second quantum dot ink with ultraviolet light to cure the patterned second quantum dot ink.

8. The method of claim 7, wherein forming the pattern further comprises:
Applying a photoresist to the substrate;
Irradiating the photoresist with light to develop the pattern; And
And removing the light-irradiated portion with a developer to form a pattern.

8. The method of claim 7, wherein removing the pattern further comprises:
Wherein the pattern is removed using one of dissolving the pattern in a solvent or burning the pattern.

Providing a substrate;
Forming a pattern on the substrate;
Applying a first quantum dot ink having quantum dots dispersed in a colloidal dispersion to a pattern formed on the substrate;
Transferring the polymer to the quantum dot ink;
Irradiating the patterned first quantum dot ink and the first polymer with ultraviolet light to cure the patterned first quantum dot ink and the first polymer;
Removing the pattern;
Applying a second quantum dot ink having a color different from that of the first quantum dot ink to a position of the removed pattern;
Transferring the second polymer to the second quantum dot ink; And
And curing the patterned second quantum dot ink and the polymer by irradiating ultraviolet light.

11. The method of claim 10, wherein forming the pattern further comprises:
Applying a photoresist to the substrate;
Irradiating the photoresist with light to develop the pattern; And
And removing the light-irradiated portion with a developer to form a pattern.

11. The method of claim 10, wherein removing the pattern further comprises:
Wherein the pattern is removed using either one of melting the pattern in a solvent or burning the pattern.

Providing a substrate;
Forming a pattern on the substrate;
Applying a first quantum dot ink having quantum dots dispersed in a colloidal dispersion to a pattern formed on the substrate;
Transferring the polymer to the first quantum dot ink;
Irradiating the patterned first quantum dot ink and the polymer with ultraviolet light to cure the patterned first quantum dot ink and the polymer;
Removing the pattern;
Applying a second quantum dot ink having a color different from that of the first quantum dot ink to a position of the removed pattern;
Transferring the polymer to the ambience second quantum dot ink; And
And curing the second quantum dot ink and the polymer by irradiating ultraviolet light.

14. The method of claim 13, wherein forming the pattern further comprises:
Applying a photoresist to the substrate;
Irradiating the photoresist with light to develop the pattern; And
And removing the light-irradiated portion with a developer to form a pattern.

14. The method of claim 13, wherein removing the pattern further comprises:
Wherein the pattern is removed using either one of melting the pattern in a solvent or burning the pattern.

Providing a substrate;
A pattern forming step of forming a pattern on the substrate;
Applying a first quantum dot resin dispersed in a polymer and a colloidal dispersion to a pattern formed on the substrate;
Irradiating the first quantum dot resin with ultraviolet light to cure the first quantum dot resin;
Removing the pattern;
Applying a second quantum dot resin having a color different from that of the first quantum dot resin to a position of the removed pattern;
And curing the second quantum dot ink and the polymer by irradiating ultraviolet light.

17. The method of claim 16, wherein forming the pattern further comprises:
Applying a photoresist to the substrate;
Irradiating the photoresist with light to develop the pattern; And
And removing the light-irradiated portion with a developer to form a pattern.

17. The method of claim 16, wherein removing the pattern further comprises:
Wherein the pattern is removed using either one of melting the pattern in a solvent or burning the pattern.

Diffusing quantum dots into an organic solvent;
Adding an emulsifier to the organic solvent and dispersing the organic solvent; And
And forming a spherical quantum dot aggregate by solidifying the quantum dots according to an increase in concentration of the organic solvent.