KR20160149507A - Laser processing system and laser processing method - Google Patents

Laser processing system and laser processing method Download PDF

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Publication number
KR20160149507A
KR20160149507A KR1020150086603A KR20150086603A KR20160149507A KR 20160149507 A KR20160149507 A KR 20160149507A KR 1020150086603 A KR1020150086603 A KR 1020150086603A KR 20150086603 A KR20150086603 A KR 20150086603A KR 20160149507 A KR20160149507 A KR 20160149507A
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KR
South Korea
Prior art keywords
machining
laser
wafer
line
test
Prior art date
Application number
KR1020150086603A
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Korean (ko)
Inventor
김철준
최영준
Original Assignee
주식회사 이오테크닉스
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Application filed by 주식회사 이오테크닉스 filed Critical 주식회사 이오테크닉스
Priority to KR1020150086603A priority Critical patent/KR20160149507A/en
Publication of KR20160149507A publication Critical patent/KR20160149507A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B23K26/705—Beam measuring device
    • B23K2203/50—
    • B23K2203/56—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

A laser processing system and a laser processing method are disclosed. The disclosed laser machining system includes a stage on which a wafer is mounted; A laser processing device for performing a laser processing operation by irradiating the wafer with a laser beam to form a processing line; And a measuring unit provided adjacent to the stage for measuring a machining deviation of the machining line during the laser machining operation on the wafer.

Description

[0001] The present invention relates to a laser processing system and a laser processing method,

The present disclosure relates to a laser machining system and a laser machining method for measuring a machining deviation of a laser machining line without wafer transfer during a laser machining operation on a wafer and correcting the machining deviation.

Conventionally, a procedure for measuring and correcting the accuracy of a laser processing line during wafer processing using a laser processing apparatus is performed on a wafer being processed. On the wafer, a resin for protecting the wafer from particles generated after the laser processing is applied, which is discolored after the processing, which makes it difficult to confirm the accuracy on a wafer in the case of a specific wafer. In order to measure the accuracy of the laser machining, the boundaries between the machined line and the surface of the unprocessed wafer must be clearly defined. However, when the applied resin acting as a protective film is discolored by laser processing, this boundary may become ambiguous . There is a portion of the screen viewed through the camera that is laser-processed, or the portion of the coated resin that is discolored black, or all of which is black, making it difficult to identify with RGB values on the camera.

Further, if it is desired to check the processed wire on the wafer to which the resin is not applied, it is troublesome to take out the wafer which is in the process of being carried out, check the wafer not coated with resin, Further, when the wafer being processed is taken out, the existing process can not be continuously performed, so that it is inconvenient to complete the process by another process.

There is provided a laser machining system and a laser machining method capable of performing a laser machining operation without replacing a wafer on a stage by providing a separate space for judging and correcting defective machining lines during a laser machining operation on the wafer .

A laser processing system according to an embodiment of the present invention includes a stage on which a wafer is mounted; A laser processing device for performing a laser processing operation by irradiating the wafer with a laser beam to form a processing line; And a measuring unit provided adjacent to the stage for measuring a machining deviation of the machining line during the laser machining operation on the wafer.

The measuring unit comprising: a sub-stage provided adjacent to the stage; And a test wafer mounted on the sub-stage.

The test wafer may be provided with a test processing line for determining whether the machining line is defective during the laser machining operation.

The test processing line may be formed by irradiating the laser beam.

Whether or not the machining line is defective can be determined by the machining deviation of the test machining line.

The wafer and the test wafer may be positioned at the same height.

And a vacuum means for fixing the wafer to the stage using a vacuum.

And a control unit for controlling the laser machining apparatus by correcting a machining deviation of the machining line measured by the measurement unit.

A laser processing method according to an embodiment of the present invention includes: forming a test processing line by irradiating a test wafer with a laser beam using a laser processing apparatus; And a step of determining whether the machining line is defective by measuring the machining line for testing.

Wherein the step of measuring the machining line for test to determine whether or not the machining line is defective comprises the steps of: measuring a machining deviation of the machining line for testing; And determining whether the machining deviation is within a set allowable range.

When the machining deviation is within the allowable range, the laser machining operation can be performed on the wafer using the laser machining apparatus.

When the machining deviation is out of the allowable range, the laser machining apparatus can be controlled so that the machining deviation falls within an allowable range, and then the laser machining operation can be performed using the laser machining apparatus.

A laser processing method according to an embodiment of the present invention includes: forming a processing line by irradiating a laser beam onto a wafer using a laser processing apparatus; Forming a test processing line by irradiating a test wafer with a laser beam using the laser processing apparatus; Measuring a machining deviation of the test processing line; And determining whether the machining deviation is within a set allowable range.

And a step of primarily determining whether the machining line is defective at a specific time point after the step of forming the machining line by irradiating the wafer with a laser beam.

When the machining deviation is within the permissible range, the laser machining operation can be continuously performed on the wafer.

When the machining deviation is out of the allowable range, the laser machining apparatus can be controlled so that the machining deviation falls within an allowable range, and then the laser machining operation can be performed.

According to the above-described object of the present invention, since the laser processing apparatus can be controlled without replacing the wafers by providing the measuring unit capable of measuring and correcting the processing deviation of the laser processing apparatus, can do.

1 is a cross-sectional view schematically showing a laser processing system according to an exemplary embodiment of the present invention.
Fig. 2 is a view for explaining the meaning of machining deviation in the present invention.
3 is a flow chart illustrating steps of a laser processing method according to an exemplary embodiment of the present invention.
4 is a flow chart illustrating steps of a laser processing method according to an exemplary embodiment of the present invention.
5 is a cross-sectional view showing the wafer processing on a stage in the laser processing system according to the exemplary embodiment.
Fig. 6 is a cross-sectional view showing the processing of the test wafer on the sub-stage in the laser processing system according to the exemplary embodiment.
7 is a plan view of the laser machining system shown in Fig.
Fig. 8 is a cross-sectional view showing the wafer processing on the stage again after determining whether or not the laser processing system is defective in the laser processing system according to the exemplary embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "electrically connected" with another part in between . Also, when an element is referred to as "comprising ", it means that it can include other elements as well, without departing from the other elements unless specifically stated otherwise.

1 is a cross-sectional view schematically showing a laser machining system 100 according to an exemplary embodiment of the present invention.

1, a laser processing system 100 may include a laser processing apparatus 110, a control unit 120, a stage 130, a vacuum means 150 and a measurement unit 160, 160 may include a test wafer TW and a sub-stage 140.

A wafer W may be mounted on the stage 130. The stage 130 may have a plurality of holes. The vacuum means 150 connected to the stage 130 may suck air existing in the holes formed in the stage 130 to form a vacuum. Therefore, the wafer W mounted on the stage 130 can be fixed to the stage 130.

The laser machining apparatus 110 can form a machining line by irradiating the wafer W with a laser beam. A plurality of processing lines may be formed on the wafer W, and a certain interval may be formed between the processing lines.

2 is a view for explaining the meaning of machining deviation in the present invention.

Referring to FIG. 2, the reference machining line means a machining line to be divided on the wafer by the laser machining apparatus, and the actual machining line means a machining line formed by irradiating the wafer with a laser beam. If there is no problem in the accuracy of the laser machining apparatus, the reference machining line and the actual machining line can coincide. However, during the subsequent laser machining, the reference machining line and the actual machining line may be different. The machining deviation may mean the difference between the reference machining line and the actual machining line.

Referring again to FIG. 1, another laser processing system 100 in an embodiment of the present invention may include a measurement unit 160. The measurement unit 160 may include a sub-stage 140 provided adjacent to the stage 130 and a test wafer TW mounted on the sub-stage 140.

The test wafer TW may not be coated with resin. On the other hand, a resin may be coated on the wafer W to protect the wafer from particles generated during laser machining. If the laser machining operation for forming the machining line on the wafer W is continued, there may arise a problem that the reference machining line to be divided and the actual machining line are different from each other. In this case, the machining deviation should be checked, and the machining deviation should be corrected when the machining deviation is within the allowable range. However, the resin coated on the wafer W is discolored at the time of laser processing, so that there is a problem that it is difficult to distinguish from the actually processed line.

A test processing line may be formed in the test wafer TW to determine whether or not the processing line is defective during the laser machining operation. The test processing line may be formed by irradiating the test wafer TW with a laser beam generated from the laser processing apparatus 110. [

The test wafer TW may be located at the same height as the wafer W mounted on the stage 130. [ If the wafer W and the test wafer TW are not located at the same height, the machining deviation formed on the wafer W and the machining deviation formed on the test wafer TW may be different from each other.

After forming a test machining line on the test wafer TW, the difference between the reference machining line and the actual machining line and side machining deviation can be measured by observing it. If the machining deviation is within a certain allowable range, it can be determined that the machining line is defective. The permissible range may be, for example, 3 mu m, but is not limited thereto.

When the machining line formed on the test wafer TW is determined to be defective, the control unit 120 connected to the laser machining apparatus 110 can correct the machining deviation of the machining line by controlling the laser machining apparatus 110. Through the above correction, the machining deviation can be adjusted to be smaller than the allowable range.

3 is a flow chart illustrating steps of a laser processing method according to an exemplary embodiment of the present invention.

Referring to FIG. 3, in the laser processing method, a laser processing apparatus 110 is used to form a test processing line on a test wafer TW on a sub stage 140 (S1). The test processing line may be formed by irradiating a laser beam generated from the laser processing apparatus 110 to a test wafer TW mounted on the sub stage 140. [

Next, the processing deviation of the test processing line formed on the test wafer TW is measured (S2). The machining deviation means the difference between the reference machining line and the actual machining line (see Fig. 2), and the measurement of the machining deviation can be performed by the user's naked eye, but is not limited thereto.

Next, it is determined whether or not the measured machining deviation deviates from the allowable range (S3). The permissible range may be, for example, 3 占 퐉, but is not limited thereto.

If the measured machining deviation is within the permissible range, an operation for forming a machining line on the wafer W is performed using the laser machining apparatus 110 (S5).

On the other hand, when the measured machining deviation deviates from the allowable range, the laser machining apparatus 110 is controlled so that the machining deviation falls within the allowable range (S4). After the correction of the machining deviation is completed, a work for forming a machining line on the wafer W is performed using the laser machining apparatus 110 (S5).

4 is a flow chart illustrating steps of a laser processing method according to an exemplary embodiment of the present invention.

Referring to FIG. 4, in the laser machining method, a machining line is formed on a wafer W using a laser machining apparatus 110 (S11).

Next, a test processing line is formed on the test wafer TW on the sub stage 140 (S12). At this stage, the laser machining apparatus 110 can move from the stage 130 to the sub-stage 140. The test processing line may be formed by irradiating a laser beam generated from the laser processing apparatus 110 to a test wafer TW mounted on the sub stage 140. [

Between the step S11 of forming a machining line on the wafer W and the step S12 of forming a test machining line on the test wafer TW, And a step of determining whether or not it is the first time. The specific time may be a predetermined time after the start of the laser processing operation on the wafer W. [ The predetermined time may be an average time at which the machining deviation exceeds the permissible range. Also, the specific point in time may be a periodic point of view. That is, after the laser machining operation is started, it is possible to determine whether or not the machining line is defective at regular time intervals.

Next, the processing deviation of the test processing line formed on the test wafer TW is measured (S13). The machining deviation means the difference between the reference machining line and the actual machining line (see Fig. 2), and the measurement of the machining deviation can be performed by the user's naked eye, but is not limited thereto.

Next, it is determined whether or not the measured machining deviation is out of the allowable range (S14). The permissible range may be, for example, 3 占 퐉, but is not limited thereto.

If the measured machining deviation is within the permissible range, the process returns to step S11 in which the machining line is formed on the wafer W by using the laser machining apparatus 110, and the laser machining operation is continued.

On the other hand, when the measured machining deviation deviates from the allowable range, the laser machining apparatus 110 is controlled so that the machining deviation falls within the allowable range (S15). After the correction of the machining deviation is completed, the process returns to step S11 in which the machining line is formed on the wafer W by using the laser machining apparatus 110, and the laser machining operation is continued.

5 is a cross-sectional view showing the wafer processing on the stage in the laser processing system according to the exemplary embodiment of the present invention. 5, when forming a processing line on the wafer W, the laser processing apparatus 110 may be positioned above the wafer W and the stage 130.

6 is a cross-sectional view showing the processing of a test wafer on a sub-stage in a laser processing system according to an exemplary embodiment of the present invention. Referring to FIG. 6, when the processing line formed on the wafer W is judged to be defective, the laser processing apparatus 110 can move upward from the upper side of the wafer W to the upper side of the test wafer TW. The moved laser machining apparatus 110 can form a test machining line on the test wafer TW using a laser beam.

7 is a plan view of the laser machining system shown in Fig. A plurality of processing lines L1 are formed on the wafer W mounted on the stage 130. A plurality of test processing lines L2 are formed on the test wafer TW mounted on the sub- Respectively. After forming the test processing line L2, the processing deviation of the test processing line L2 can be measured. If it is determined that the measured machining deviation is out of the allowable range, the control unit 120 can correct the machining deviation so that the machining deviation falls within the allowable range.

Fig. 8 is a cross-sectional view showing the wafer machining on the stage again after it is judged in the laser machining system according to the exemplary embodiment of the present invention. Referring to Fig. 8, the laser machining apparatus 110 can move upward of the wafer W from above the test wafer TW. When the machining deviation of the machining line (L2 in Fig. 7) formed on the test wafer TW is judged to be within the permissible range, the laser machining apparatus 110 can return to the upper side of the wafer W without correcting the machining deviation have. On the other hand, when it is judged that the machining deviation of the machining line (L2 in Fig. 7) formed on the test wafer TW is out of the allowable range, the laser machining apparatus 110 corrects the machining deviation by the control unit 120 And can be returned to the upper side of the wafer W.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100 ... Laser processing system 160 ... Measuring unit
110 ... Laser processing equipment W ... wafer
120 ... The controller TW ... Test wafer
130 ... Stage L1 ... Reference machining line
140 ... Secondary stage L2 ... Actual machining line
150 ... Vacuum means

Claims (16)

A stage on which a wafer is mounted;
A laser processing device for performing a laser processing operation by irradiating the wafer with a laser beam to form a processing line; And
And a measuring unit provided adjacent to the stage for measuring a machining deviation of the machining line while performing the laser machining operation on the wafer. The method according to claim 1,
The measuring unit comprising: a sub-stage provided adjacent to the stage; And
And a test wafer mounted on the sub-stage. 3. The method of claim 2,
Wherein the test wafer is provided with a laser processing system in which a test processing line for determining whether the machining line is defective during a laser machining operation is formed, The method of claim 3,
And the test processing line is formed by irradiating the laser beam. The method of claim 3,
Wherein whether or not the machining line is defective is determined by a machining deviation of the test machining line. 3. The method of claim 2,
Wherein the wafer and the test wafer are located at the same height. The method according to claim 1,
And vacuum means for fixing the wafer to the stage using a vacuum. The method according to claim 1,
And a control unit for controlling the laser machining apparatus by correcting a machining deviation of the machining line measured by the measurement unit. Forming a test processing line by irradiating a test wafer with a laser beam using a laser processing apparatus; And
And measuring the machining line for testing to determine whether or not the machining line is defective. 10. The method of claim 9,
Wherein the step of measuring the test line to determine whether the line is defective includes:
Measuring a machining deviation of the test processing line; And
And determining whether the machining deviation is within a set allowable range. 11. The method of claim 10,
And a laser processing operation is performed on the wafer by using the laser processing apparatus when the processing deviation is within an allowable range. 11. The method of claim 10,
Wherein when the machining deviation is out of the allowable range, the laser machining apparatus is controlled so that the machining deviation falls within an allowable range, and then the laser machining operation is performed using the laser machining apparatus. Forming a processing line by irradiating a wafer with a laser beam using a laser processing apparatus;
Forming a test processing line by irradiating a test wafer with a laser beam using the laser processing apparatus;
Measuring a machining deviation of the test processing line; And
And determining whether the machining deviation is within a set allowable range. 14. The method of claim 13,
Further comprising the step of: firstly determining whether the machining line is defective at a specific time point after the step of forming the machining line by irradiating the wafer with a laser beam. 14. The method of claim 13,
And when the machining deviation is within an allowable range, the laser machining operation is continued to the wafer. 14. The method of claim 13,
Wherein the laser machining apparatus controls the laser machining apparatus so that the machining deviation falls within an allowable range when the machining deviation is out of the allowable range.
KR1020150086603A 2015-06-18 2015-06-18 Laser processing system and laser processing method KR20160149507A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210040386A (en) * 2018-08-07 2021-04-13 파크 테크-파카징 테크놀로지이스 게엠베하 Method and apparatus for repairing test contact arrangements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210040386A (en) * 2018-08-07 2021-04-13 파크 테크-파카징 테크놀로지이스 게엠베하 Method and apparatus for repairing test contact arrangements

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