KR20160142448A - Power supply unit for magnetron including spark noise filter and peak overcurrent protection circuit - Google Patents

Power supply unit for magnetron including spark noise filter and peak overcurrent protection circuit Download PDF

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Publication number
KR20160142448A
KR20160142448A KR1020150077957A KR20150077957A KR20160142448A KR 20160142448 A KR20160142448 A KR 20160142448A KR 1020150077957 A KR1020150077957 A KR 1020150077957A KR 20150077957 A KR20150077957 A KR 20150077957A KR 20160142448 A KR20160142448 A KR 20160142448A
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KR
South Korea
Prior art keywords
magnetron
power supply
power
supply unit
protection circuit
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KR1020150077957A
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Korean (ko)
Inventor
최영욱
전석기
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한국전기연구원
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Priority to KR1020150077957A priority Critical patent/KR20160142448A/en
Publication of KR20160142448A publication Critical patent/KR20160142448A/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/01—Generation of oscillations using transit-time effects using discharge tubes
    • H03B9/10—Generation of oscillations using transit-time effects using discharge tubes using a magnetron
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/66—Circuits
    • H05B6/666—Safety circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The present invention relates to a magnetron power supply device configured by using a semiconductor switch element, and to a magnetron power supply device including a spark noise filter and a peak overcurrent protection circuit, to prevent spark noise and peak overcurrent which may occur at the time of initial driving of a magnetron, from flowing into the magnetron power supply device to damage a semiconductor switch element. The magnetron power supply device which supplies power to a magnetron including an anode and a cathode according to the present invention comprises: a power supply unit which supplies pulse waveform power to the magnetron by serially connecting one or more unit power modules including a power switch that includes a semiconductor switch element and a power capacitor serially connected to the power switch; a heat power supply unit which supplies heat power for heating the cathode of the magnetron; a spark noise filter which is positioned between the cathode of the magnetron and the heater power supply unit, and suppresses the spark noise generated in the magnetron that is transferred to the heater power supply unit; and a peak overcurrent protection circuit which is positioned between the cathode of the magnetron and the power supply unit, and suppresses the peak overcurrent occurring in the magnetron that is transferred to the power supply unit.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron power supply device including a spark noise filter and an instantaneous overcurrent protection circuit,

The present invention relates to a magnetron power supply device and more particularly to a magnetron power supply device using a semiconductor switch device, in which spark noise and peak overcurrent that may occur during the initial operation of a magnetron, To a magnetron power supply device having a spark noise filter and an instantaneous overcurrent protection circuit that can prevent a semiconductor switching device from being damaged by flowing into a magnetron power supply device.

In general, a magnetron is a kind of oscillator which is called a magnetron tube and has an anode part and a cathode part which is arranged corresponding to the anode part and emits thermoelectrons to output high frequency energy.

The magnetron is used for various purposes. For example, a microwave oven of 2.45 GHz, a shipborne radar of 9.5 GHz band, a weather radar of 35 GHz band, a radar for airport control of 95 GHz band, And is used in various other applications.

Depending on the various uses of the magnetron, the power supply for supplying power to the magnetron may also be implemented in various forms. In particular, in the case of a magnetron in which a high voltage and a large current are used, a power supply for a magnetron is generally constructed by using a thyratron, which is a type of discharge tube, as a switch.

For example, in the case of a particle accelerator, which has been used for various purposes, such as a medical implanted accelerator, the magnetron has an anode voltage of about 30 to 50 kV, an anode current of about 80 to 100 A, And a power supply in the form of a pulse having a pulse width of about 4 to 5 占 퐏 is periodically used. As a result, a thyratron having a characteristic capable of controlling a high voltage and a high current power source has been widely used as a switch for a particle accelerator.

FIG. 1 shows a conventional magnetron power supply apparatus implemented using a sylatron, and FIG. 2 illustrates a waveform of a power source including the above-described pulse. As shown in FIG. 1, a cyclotron 110 connected to a pulse forming network (PFN) operates as a switch to form a pulse waveform. The cyclotron 110 has a cathode, a grid, and an anode in a tube as a hot cathode discharge tube (a discharge tube that uses a cathode to heat and emit thermoelectrons) or a grid control discharge tube having one or two grids between an anode and a cathode Hydrogen, inert gas, mercury vapor, or the like is enclosed. However, there is a problem that the lifetime is shorter than that of a general semiconductor switch element, although it may vary depending on the use environment. In addition, since a high standard electric characteristic is required for the cyclotron 110, the cyclotron 110 has a considerably high unit price, and therefore, there is a problem in that the cyclic replacement cost increases significantly with a short lifetime.

As a solution to this problem, it is possible to consider a method of constructing a power supply for replacing the above-mentioned cyclotron 110 by using a semiconductor switch element. FIG. 3 shows an example in which a plurality of insulated gate bipolar transistors (IGBTs) are used to constitute a power supply device.

However, when a power supply device is constructed by using a semiconductor switch device such as an insulated gate bipolar transistor (IGBT) as shown in FIG. 3, the inventors of the present invention have found that a spark noise generated when a discharge starts at the time of initial operation of the magnetron Gate of the insulated gate bipolar transistor (IGBT) while applying an overvoltage to the semiconductor switch element such as the insulated gate bipolar transistor (IGBT). The gate of the insulated gate bipolar transistor (IGBT) There is a problem that the semiconductor switch element may be damaged due to damage to the insulating layer between the emitters.

3, when a power supply device is constructed using a semiconductor switch device such as an insulated gate bipolar transistor (IGBT), an instantaneous overcurrent occurs during the initial operation of the magnetron, It has been found that the semiconductor switching element may be damaged such that the insulating layer between the collector and the emitter of the transistor (IGBT) is damaged.

Accordingly, it is possible to configure a power supply device by replacing a semiconductor switch element with a part such as a silicon nitride which can limit the lifetime of the magnetron power supply. In addition, spark noise, which may occur during initial operation of the magnetron, And a magnetron power supply device capable of preventing damage to the semiconductor switch device due to peak overcurrent. However, there is not yet a suitable magnetron power supply device capable of satisfying the above.

Korean Patent Publication No. 10-2015-0021204 (published on Mar. 2, 2015)

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art as described above, and it is an object of the present invention to provide a semiconductor switch device, which is capable of solving the problem of high maintenance cost due to short life of a silatron switch used in a magnetron power supply, It is another object of the present invention to provide a magnetron power supply device capable of preventing damage to the semiconductor switch element due to spark noise and peak overcurrent that may occur during initial operation of the magnetron, do.

According to an aspect of the present invention, there is provided a magnetron power supply device for supplying power to a magnetron including an anode and a cathode, the magnetron power supply device including a power switch including a semiconductor switch device, And a power supply unit connected in series to at least one of the unit power supply modules to supply power to the magnetron with a pulse waveform; A heater power supply unit for supplying a heater power for heating the cathode of the magnetron; A spark noise filter disposed between the cathode of the magnetron and the heater power unit to inhibit spark noise generated in the magnetron from being transmitted to the heater power unit; And an instantaneous overcurrent protection circuit which is located between the cathode of the magnetron and the power supply unit and inhibits the instantaneous peak overcurrent that may occur in the magnetron from being transmitted to the power supply unit.

Here, the spark noise filter may be configured by connecting a plurality of unit filters in which a first capacitor is connected between one end of the first inductor and one end of the second inductor.

Here, the overcurrent protection circuit may include a third inductor and a first resistor connected in series.

The instantaneous overvoltage protection circuit may further include an instantaneous overvoltage protection circuit between the anode of the magnetron and the cathode to which the overcurrent protection circuit is connected, to suppress a peak overvoltage that may occur in the magnetron.

Here, the overvoltage protection circuit may include a fourth inductor and a second resistor connected in series.

According to another aspect of the present invention, there is provided a magnetron comprising: a magnetron power supply unit including the magnetron power supply unit; And a microwave oscillation unit for generating microwaves by receiving power from the magnetron power supply unit.

According to the present invention, by configuring the magnetron power supply device including the power switch using the semiconductor switch element, the spark noise filter, and the instantaneous overcurrent protection circuit, the spark noise and the spark noise that can occur according to the initial operation of the magnetron It is possible to prevent breakage of the semiconductor switch element due to a peak overcurrent and to realize a magnetron power supply device having a semi-permanent lifetime.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
FIG. 1 is a circuit diagram of a magnetron power supply apparatus using a conventional silatron.
2 is a waveform graph of a magnetron power supply apparatus using a quiltingron according to the prior art.
3 is a circuit diagram of a magnetron power supply device using a semiconductor switch device according to the related art.
4 is a circuit diagram of a magnetron power supply apparatus having a spark noise filter and an instantaneous overcurrent protection circuit according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments will be described in detail below with reference to the accompanying drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The terms first, second, etc. may be used to describe various components, but the components are not limited by the terms, and the terms are used only for the purpose of distinguishing one component from another Is used.

According to the present invention, when a magnetron power supply device is constructed by using a semiconductor switching device such as an insulated gate bipolar transistor (IGBT) according to the related art, spark noise, which is generated as a discharge starts at the initial stage of the magnetron, The semiconductor switching device such as the insulated gate bipolar transistor (IGBT) may be damaged while generating an instantaneous overcurrent in the initial operation of the magnetron, A spark noise filter and an instantaneous overcurrent protection circuit that can prevent spark noise and peak overcurrent that may occur during the initial operation of the magnetron from entering the magnetron power supply device and damaging the semiconductor switch device Thereby constituting the magnetron power supply device As it characterized by initiating the magnetron power supply, to avoid the damage or deterioration of the semiconductor switching element.

4 shows a circuit diagram of a magnetron power supply 400 having a spark noise filter and an instantaneous overcurrent protection circuit according to an embodiment of the present invention. 4, a magnetron power supply 400 having a spark noise filter and an instantaneous overcurrent protection circuit according to an embodiment of the present invention includes a magnetron 410 including an anode and a cathode, A power supply unit 420 including a power supply switch 422 including a semiconductor switch device and a power supply capacitor 424; a heater power supply unit 420 for supplying a heater power for heating the cathode of the magnetron 430 and a spark noise filter 440 and an instantaneous overcurrent protection circuit 450 for protecting the semiconductor switch device 422 included in the power supply unit 420. The power supply unit 420 includes at least one unit power supply module 426 including a power switch 422 including a semiconductor switch device and a power capacitor 424 connected in series, The power switch 422 is switched and the power of the pulse waveform is supplied to the magnetron 410.

The spark noise filter 440 is located between the cathode of the magnetron 410 and the heater power unit 430 so that the spark noise generated in the magnetron 410 can be detected by the spark noise filter 440. [ And to be transmitted to the heater power supply unit 430.

The instantaneous overcurrent protection circuit 450 is located between the cathode of the magnetron 410 and the power supply unit 420 so that an instantaneous overcurrent that may occur in the magnetron 410 may be generated by the power supply unit 420 in the first embodiment.

4, a magnetron power supply 400 having a spark noise filter and an instantaneous overcurrent protection circuit according to an embodiment of the present invention is connected to the anode of the magnetron 410 and the overcurrent protection circuit 400. In addition, And an instantaneous overvoltage protection circuit 460 for suppressing an instantaneous overvoltage that may occur in the magnetron 410 between the cathode to which the first transistor 450 is connected.

Accordingly, spark noise and peak overcurrent, which may occur at the initial operation of the magnetron 410, are generated by the power supply unit 420 when the magnetron power supply apparatus is constructed using the semiconductor switch device And includes a spark noise filter 440 and an instantaneous overcurrent protection circuit 450 that can prevent the semiconductor switching element 422 flowing into the power switch 422 from damaging the semiconductor switch element. The breakdown of the semiconductor switch element constituting the power switch 422 can be effectively prevented by including the instantaneous overvoltage protection circuit 460 that can suppress the overvoltage.

As will be appreciated, the output voltage of the magnetron power supply, as discussed above, will typically have a relatively high value (for example, As shown in FIG. 2, in order to switch such a high voltage to a semiconductor switch element, a plurality of semiconductor switch elements (for example, Are connected in series. In order to output the high voltage as described above, the charging circuit 320 is connected to the plurality of power capacitors 312 to charge the respective power capacitors 312, The output of the waveform shown in FIG. 2 can be obtained.

In this way, the charging circuit 320 charges the power supply capacitor 312 to a predetermined voltage level. The output of the power supply unit, which is formed by connecting the series of unit power supply modules 310 in series, The voltage level of the power module 310 becomes close to the sum of the voltage levels of the power module 310. Then, a pulse waveform is formed while interrupting the power switch 314. In addition, the charging circuit 320 may be configured as a single circuit, but the charging modules formed independently for each unit power source module 310 may be a set of the entire charging circuits 320.

The control unit 330 controls the operation of the charging circuit 320 and the power switch 314 so that the capacitor of each unit power module 310 is charged in consideration of the voltage and pulse waveform required for the magnetron And may control the power switch 314 and the charging circuit 320 to operate properly in consideration of the waveform such as the width of the required pulse and the like.

At this time, the power switch 314 is formed by using a semiconductor switch device such as an insulated gate bipolar transistor (IGBT), thereby greatly increasing the lifetime of the magnetron power supply device, 110 can be significantly reduced.

However, if the power applied to the magnetron 410 reaches a predetermined voltage during the initial operation of the magnetron 410, a discharge may occur. 2, when the applied voltage reaches about 35 kV at the initial driving time of the magnetron 410 driven at 40 kV, the current density between the anode and the cathode inside the magnetron 410 becomes uniform Sparks may appear in areas that have not been observed. This spark can act as a powerful noise signal in very short moments, which can damage or degrade weak circuit elements.

Particularly, the inventors of the present invention have found that the spark noise generated when the magnetron 410 starts to be discharged during the initial operation can flow into the ground through the heater power supply circuit, and furthermore, the insulated gate bipolar transistor (IGBT) The overvoltage is applied to the semiconductor switch element constituting the power switch 422 and the like so that the insulating layer between the gate and the emitter of the insulated gate bipolar transistor IGBT is damaged, It is possible to cause damage or deterioration of the substrate.

The present inventors have also found that an insulation layer between a collector and an emitter of an insulated gate bipolar transistor (IGBT) generates an instantaneous overcurrent due to a spark during initial operation of the magnetron 410 And the semiconductor switch element is damaged or deteriorated due to damage.

Accordingly, in the present invention, as shown in FIG. 4, a spark noise filter 440 for suppressing the transmission of the spark noise to the heater power unit 430 and the instantaneous overcurrent by adding an instantaneous overcurrent protection circuit 450 for preventing the peak overcurrent from being transmitted to the power supply unit 420, spark noise (spark), which is caused by a spark that may occur at the initial driving of the magnetron 410, noise and instantaneous overcurrent of the semiconductor switch device can be effectively prevented.

4, the first capacitor 446 is connected between one end of the first inductor 442 and one end of the second inductor 444 to form a spark noise filter 440. [ A plurality of unit filters may be connected in series. The spark noise caused by the spark in the initial operation of the magnetron functions as a strong noise in a very short time. To effectively filter the spark noise, a plurality of unit filters constituting the spark noise filter 440 are connected in series And the value of the first capacitor 446 is preferably a capacitor of various values so as to filter noise in various frequency ranges such as a high frequency and a low frequency.

However, since the spark noise due to the spark may have various characteristics depending on the operating environment such as the characteristics of the magnetron, in order to construct the spark noise filter 440, a method of experimentally deriving the optimal design may be used have. The values of the first inductor 442, the second inductor 444 and the first capacitor 446 of each unit filter are measured while observing the waveform from the 220V terminal on the primary side of the heater power supply part 430 to an oscilloscope or the like. The optimum value can be obtained experimentally.

A differential probe may be connected to a gate-emitter of an insulated gate bipolar transistor (IGBT) included in the power supply unit 420 to monitor a waveform to minimize noise It is also possible to derive the optimum value of the values of the first inductor 442, the second inductor 444 and the first capacitor 446 of the unit filter.

4, the instantaneous overcurrent protection circuit 450 according to an exemplary embodiment of the present invention may include a third inductor 452 and a first resistor 454 connected in series, A momentary overcurrent due to a spark that may occur at the initial driving of the magnetron 410 may be generated between the cathode of the magnetron 410 and the power supply unit 420 to the power supply unit 420 Thereby suppressing transmission.

The third inductor 452 suppresses an instantaneous overcurrent during initial operation of the magnetron 410 and the first resistor 454 functions as a short circuit of the magnetron discharge circuit .

In the case of the instantaneous overcurrent protection circuit 450, a method of experimentally deriving an optimum design similar to the case of the spark noise filter 440 can be used. For example, while measuring the output current at the portion where the output voltage of the magnetron 410 is generated, an instantaneous overcurrent at the time of initial operation of the magnetron 410 is applied to the insulated gate bipolar The optimum value of the third inductor 452 and the first resistor 454 values of the instantaneous overcurrent protection circuit 450 can be derived to be equal to or less than the rated peak current of the transistor (IGBT).

Accordingly, the third inductor 452 and the first resistor 454 may have various values. In an embodiment of the present invention, when the pulse waveform of FIG. 2 is supplied to the magnetron 410, The instantaneous overcurrent protection circuit 450 is constructed by using the elements of the inductor 452 of about 10 to 30 uH and the first resistor 454 of about 10 to 30 Ohm so that the discharge it is possible to effectively suppress damage or deterioration of the insulated gate bipolar transistor (IGBT) included in the power supply unit 420 due to an instantaneous overcurrent caused by spark.

4, the instantaneous overvoltage protection circuit 460 according to an embodiment of the present invention may include a fourth inductor 464 and a second resistor 462 connected in series, and the magnetron And is connected between the anode of the magnetron 410 and the cathode to which the overcurrent protection circuit 450 is connected, thereby suppressing the instantaneous overvoltage that may occur at the initial operation of the magnetron 410.

At this time, the overcurrent protection circuit 450 suppresses the instantaneous overvoltage that may occur due to a spark in the initial operation of the magnetron, and at the same time, the dummy load (dummy) which consumes the energy remaining in the magnetron 410 load operation, thereby enabling stable operation of the power source and the magnetron.

In the case of the instantaneous overvoltage protection circuit 460, a method of experimentally deriving the optimum design similar to the case of the spark noise filter 440 can be used. For example, a differential probe may be connected to a gate-emitter of an insulated gate bipolar transistor (IGBT) included in the power supply unit 420 to minimize noise while observing a waveform It is possible to derive the optimum value of the fourth inductor 464 and the second resistor 462.

Furthermore, the magnetron power supply device 400 having the spark noise filter and the instantaneous overcurrent protection circuit according to an embodiment of the present invention described above can constitute a magnetron power supply unit including the sponge noise filter and the instantaneous overcurrent protection circuit, And a microwave oscillation unit for generating a microwave by receiving power from the power supply unit.

Further, the magnetron constructed as described above may be used in various particle accelerators such as medical accelerators using a particle accelerator including a particle generating unit for generating particles and a particle accelerating unit for accelerating the particles using microwaves generated from the magnetron. .

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments described in the present invention are not intended to limit the technical spirit of the present invention but to illustrate the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents thereof should be construed as being included in the scope of the present invention.

110:
310: Unit power module
312 Power Condenser
314: Power switch
320: Charging circuit
330:
400: Magnetron power supply
410: Magnetron
420: Power supply
422: Power switch
424: Power capacitor
426: Unit power module
430: heater power section
440: Spark noise filter
442: first inductor
444: Second inductor
446: first capacitor
450: Instantaneous overcurrent protection circuit
452: Third inductor
454: first resistance
460: Instantaneous overvoltage protection circuit
462: second resistance
464: fourth inductor

Claims (6)

1. A magnetron power supply for supplying power to a magnetron including an anode and a cathode,
A power switch including a semiconductor switch element, and
A power supply unit connected to at least one unit power supply module including a power capacitor connected in series with the power switch to supply a pulse waveform power to the magnetron;
A heater power supply unit for supplying a heater power for heating the cathode of the magnetron;
A spark noise filter disposed between the cathode of the magnetron and the heater power unit to inhibit spark noise generated in the magnetron from being transmitted to the heater power unit; And
And an instantaneous overcurrent protection circuit which is located between the cathode of the magnetron and the power supply unit and inhibits an instantaneous overcurrent that may occur in the magnetron from being transmitted to the power supply unit. Supply device. The method according to claim 1,
A spark noise filter is a spark noise filter,
Wherein the first capacitor is formed by connecting a plurality of unit filters connected in series between one end of the first inductor and one end of the second inductor. The method according to claim 1,
Wherein the overcurrent protection circuit comprises:
And the third inductor and the first resistor are connected in series. The method according to claim 1,
Between the anode of the magnetron and the cathode to which the overcurrent protection circuit is connected,
And an instantaneous overvoltage protection circuit for suppressing an instantaneous overvoltage that may occur in the magnetron. 5. The method of claim 4,
The overvoltage protection circuit includes:
And a fourth inductor and a second resistor are connected in series. A magnetron power supply unit including the magnetron power supply unit according to claim 1; And
And a microwave oscillation unit for generating a microwave by receiving power from the magnetron power supply unit.
KR1020150077957A 2015-06-02 2015-06-02 Power supply unit for magnetron including spark noise filter and peak overcurrent protection circuit KR20160142448A (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150021204A (en) 2013-08-20 2015-03-02 한국전기연구원 Power supply unit for magnetron

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150021204A (en) 2013-08-20 2015-03-02 한국전기연구원 Power supply unit for magnetron

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