KR20160141362A - Semiconductor light emitting device - Google Patents

Abstract

An embodiment of the technical idea of the present invention provides a semiconductor light-emitting device comprising: a light-emitting structure having first and second surfaces, which are placed opposite each other, including first and second conductive semiconductor layers for providing the first and second surfaces respectively and an active layer arranged therebetween, having one region of the first conductive semiconductor layer opened toward the second surface, and having irregularities formed on the first surface; first and second electrodes arranged on the one region of the first conductive semiconductor layer and one region of the second conductive semiconductor layer, respectively; a light-transmitting supporting substrate arranged on a first surface of the light-emitting structure; and a light-transmitting bonding layer arranged between the first surface of the light-emitting structure and the light-emitting supporting substrate and having a refractive index between the refractive index of the first conductive semiconductor layer and the refractive index of the light-transmitting supporting substrate.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present invention relates to a semiconductor light emitting device.

In general, a semiconductor light emitting diode (LED) is widely used as a light source because of various advantages such as low power consumption and high brightness. In particular, recent semiconductor light emitting devices have been employed as backlights for displays such as large liquid crystal displays (LCDs) as well as various types of lighting devices.

A substrate used for epitaxial growth for a semiconductor light emitting device (hereinafter referred to as a growth substrate) can be removed due to an electrical connection or an optical loss problem. In this case, other means may be required to support the epitaxial thin film.

One of the problems to be solved by the present invention is to provide a semiconductor light emitting device in which the light extraction efficiency is improved while maintaining the flip chip structure.

One embodiment of the technical concept of the present invention is a semiconductor device comprising first and second conductivity type semiconductor layers having first and second surfaces opposite to each other and providing the first and second surfaces, A light emitting structure including an active layer, the light emitting structure having one side of the first conductivity type semiconductor layer opened toward the second side and having concavities and convexity formed on the first side; A first electrode and a second electrode respectively disposed on one region of the second conductivity type semiconductor layer; a light-transmissive support substrate disposed on a first surface of the light-emitting structure; and a light- And a translucent bonding layer having a refractive index between the refractive index of the first conductivity type semiconductor layer and the refractive index of the light-transmitting support substrate.

In one example, the translucent bonding layer may include a wavelength conversion material that converts the wavelength of light generated from the active layer to another wavelength.

In one example, the translucent bonding layer may comprise at least one material selected from the group consisting of polyacrylate, polyimide, polyamide and benzocyclobutene (BCB) have.

In one example, the light-transmitting supporting substrate may be a glass substrate.

In one example, the surface area of the first surface of the light emitting structure may be 80% or more.

One embodiment of the technical idea of the present invention is a semiconductor light emitting device having first and second conductive semiconductor layers having first and second surfaces opposed to each other and providing the first and second surfaces, A light emitting structure having one region of the first conductivity type semiconductor layer opened toward the second surface, and a second region of the first conductivity type semiconductor layer and one region of the second conductivity type semiconductor layer, A light-transmitting support substrate disposed on the first surface of the light-emitting structure, and a second light-shielding substrate disposed between the first surface of the light-emitting structure and the light-transmitting support substrate, And a translucent bonding layer containing a wavelength conversion material for converting at least a part of light of one wavelength into light of a second wavelength.

In one example, the light-transmitting support substrate may further include an optical filter layer disposed on one surface of the light-transmissive support substrate and intercepting light of the first wavelength and transmitting light of the second wavelength.

And a color filter layer disposed on the optical filter layer and selectively transmitting light in a part of the second wavelength.

In one example, it may further comprise a light-diffusing layer disposed on the color filter layer for diffusing the emitted light.

One embodiment of the technical idea of the present invention is a light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer and having a first penetrating opening formed therein, And a second penetrating opening formed in the upper surface of the second conductive semiconductor layer and communicating with the first penetrating opening; and a second conductive semiconductor layer formed in the second conductive semiconductor layer, the second penetrating opening, A first electrode structure formed on a lower surface of the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer; a second electrode structure formed on the first conductivity type semiconductor layer; A second electrode structure formed on the bottom surface of the current distribution layer and electrically connected to the current distribution layer through the first through openings and the second through openings; And a light-transmitting supporting substrate bonded on the light-transmitting bonding layer.

The first conductivity type semiconductor layer may be an n-type semiconductor layer, and the second conductivity type semiconductor layer may be a p-type semiconductor layer.

In one example, the light emitting device may further include a graded index layer disposed between the current distribution layer and the transparent bonding layer.

In one example, the light emitting device may further include a reflective layer disposed on an inner wall of the first through-hole and the second through-hole, and a lower surface of the first conductive semiconductor layer.

According to this embodiment, it is possible to provide a flip chip semiconductor light emitting device having a light-transmitting supporting substrate such as glass. The translucent support substrate may be provided on the surface of the translucent support substrate where the projections and depressions are formed by introducing a translucent bonding layer between the translucent support substrate and the light emitting structure. The translucent substrate may be configured to function as a refractive index matching layer, and as a result, the light extraction efficiency can be improved. The translucent bonding layer can simplify the wavelength conversion structure by mixing a wavelength conversion material such as a phosphor.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a side sectional view showing a semiconductor light emitting device according to an embodiment of the present invention.
2 is a flowchart illustrating a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
3 is a side cross-sectional view illustrating a semiconductor light emitting device according to an embodiment of the present invention.
FIGS. 4A to 4F are cross-sectional views of main processes for explaining a part of a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
5A to 5F are cross-sectional views of major processes for explaining another part of a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 6 is a flowchart illustrating a process for forming a composite buffer layer according to an embodiment of the present invention. Referring to FIG.
7A to 7D are side cross-sectional views showing various examples of composite buffer layers that can be employed in one embodiment of the technical concept of the present invention, respectively.
8 and 9 are side cross-sectional views illustrating a package having a semiconductor light emitting device according to an embodiment of the present invention.
10 to 13 are side cross-sectional views showing semiconductor light emitting devices according to various embodiments of the technical idea of the present invention.
FIG. 14 is a CIE coordinate system for explaining a wavelength conversion material applicable to a semiconductor light emitting device or a package according to an embodiment of the present invention.
FIGS. 15A and 15B are cross-sectional views showing a principal part of a semiconductor light emitting device according to one embodiment of the technical idea of the present invention.
Fig. 15C is a rear view of the semiconductor light emitting element shown in Fig. 15A.
16A to FIG. 28A and FIG. 16B to FIG. 28B are cross-sectional views of major processes for explaining a method for manufacturing a semiconductor light emitting device according to one embodiment of the technical idea of the present invention.
29 to 33 are side sectional views showing semiconductor light emitting devices according to various embodiments of the technical idea of the present invention.
34 and 35 are schematic cross-sectional views of a white light source module including a semiconductor light emitting device according to an embodiment of the present invention.
36 is a schematic perspective view of a backlight unit including a semiconductor light emitting device according to an embodiment of the present invention.
37 is a diagram showing an example of a direct-type backlight unit including a semiconductor light emitting device according to an embodiment of the technical idea of the present invention.
38 and 39 are views showing an example of an edge type backlight unit including a semiconductor light emitting device according to one embodiment of the technical idea of the present invention.
40 is a schematic exploded perspective view of a display device including a semiconductor light emitting device according to an embodiment of the present invention.
41 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention; 1 is a schematic perspective view showing a flat panel illumination device.
FIG. 42 is a schematic exploded perspective view showing a lighting device including a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 43 is a schematic exploded perspective view showing a bar-type lighting device including a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 44 is a schematic exploded perspective view showing a lighting device including a semiconductor light emitting device according to an embodiment of the present invention.
45 is a schematic view for explaining an indoor lighting control network system including a semiconductor light emitting device according to an embodiment of the present invention.
46 is a schematic view for explaining a network system including a semiconductor light emitting device according to an embodiment of the present invention.
47 is a block diagram for explaining a communication operation between a smart engine and a mobile device of a lighting device having a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 48 is a conceptual diagram schematically showing a smart lighting system having a semiconductor light emitting device according to an embodiment of the present invention.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments are provided so that those skilled in the art can more fully understand the present invention. For example, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements. Also, in this specification, terms such as "upper", "upper surface", "lower", "lower surface", "side surface" and the like are based on the drawings and may actually vary depending on the direction in which the devices are arranged.

The term " one example " used in this specification does not mean the same embodiment, but is provided to emphasize and describe different unique features. However, the embodiments presented in the following description do not exclude that they are implemented in combination with the features of other embodiments. For example, although the matters described in the specific embodiments are not described in the other embodiments, they may be understood as descriptions related to other embodiments unless otherwise described or contradicted by those in other embodiments.

1 is a side sectional view showing a semiconductor light emitting device according to an embodiment of the present invention.

The semiconductor light emitting device 50 according to the present embodiment includes the light emitting structure 30 having the first conductivity type semiconductor layer 32 and the second conductivity type semiconductor layer 37 and the active layer 35 located therebetween, And a light-transmissive support substrate 71 for supporting the light-emitting structure 30.

The first conductivity type semiconductor layer 32 may include a nitride semiconductor that satisfies n-type Al _x In _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + And the n-type impurity may be Si. For example, the first conductive semiconductor layer 32 may be n-type GaN. The second conductive type semiconductor layer 37 may be a nitride semiconductor layer that meet a p-type _{Al x In y Ga 1 -x- y} N, p -type impurity may be Mg. For example, the second conductive semiconductor layer 37 may be p-type AlGaN / GaN. The active layer 35 may be a multiple quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are alternately stacked. For example, when a nitride semiconductor is used, the active layer 35 may be a GaN / InGaN MQW structure.

The light emitting structure 30 has first and second surfaces provided by the first and second conductivity type semiconductor layers 32 and 37, respectively. The first and second surfaces may be opposite to each other.

First and second electrodes 58 and 59 connected to the first and second conductivity type semiconductor layers 32 and 37 are disposed on a second surface of the light emitting structure 30, respectively. The ohmic contact layer 54 may further include an ohmic contact layer between the second conductive semiconductor layer 37 and the second electrode 59.

The light emitting structure 30 may include protrusions P formed on the first surface thereof. The irregularities P may be formed by processing at least a part of the first conductivity type semiconductor layer 32. The concavities and convexities P may be hemispherical protrusions as in the present embodiment, but the present invention is not limited thereto and may be a non-flat structure having various other shapes. The area of the first surface of the light emitting structure 30 where the concavities and convexities P are formed may be 80% or more. Further, the area where the concavities and convexities P are formed may be 90% or more so as to further improve the light extraction efficiency.

The light-transmissive support substrate 71 disposed on the first surface of the light-emitting structure 30 may be provided as a main path through which light generated from the active layer 35 is emitted. The light-transmissive support substrate 71 may be made of a light-transmissive material as a support substrate for replacing the growth substrate used for growing the light-emitting structure 30. [ For example, the light-transmitting supporting substrate 71 may be a glass substrate.

In a specific embodiment, the light transmissive support substrate 71 may be a phosphor or a support containing a wavelength conversion material such as a quantum dot. For example, the translucent support substrate 71 may be made of a translucent liquid resin such as a silicone resin or an epoxy resin mixed with a wavelength conversion material.

As another example, when the translucent support substrate 71 is a glass substrate, a support containing the wavelength conversion material can be manufactured by mixing a wavelength conversion material such as a phosphor with a glass composition and firing the mixture at low temperature.

The light-transmitting support substrate 71 may be bonded to the first surface of the light-emitting structure 30 using a light-transmitting bonding layer 75. For example, the translucent bonding layer 75 may include a material selected from polyacrylate, polyimide, polyamide, and benzocyclobutene (BCB). The light-transmitting bonding layer 75 may be a layer for matching the refractive index between the light-transmitting support substrate 71 and the light-emitting structure 30. The refractive index of the translucent bonding layer 75 may be greater than the refractive index of the translucent support substrate 71. For example, when the translucent support substrate 71 is a glass having a refractive index of about 1.5, the translucent bonding layer 75 may have a refractive index greater than 1.5.

The refractive index of the light-transmitting bonding layer 75 may be smaller than the refractive index of the first conductivity type semiconductor layer 32. For example, when the first conductivity type semiconductor layer 32 is n-type GaN (refractive index: about 2.3), the refractive index of the light-transmitting bonding layer 75 may be 2.3 or less.

The translucent bonding layer 75 may be configured to act as a wavelength conversion layer for converting the wavelength of light generated from the active layer 35 in addition to the refractive index matching layer. For example, the translucent bonding layer 75 may include a wavelength conversion material such as a phosphor (see FIG. 3).

2 is a flowchart illustrating a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention. The above manufacturing method can be understood as a manufacturing method of the semiconductor light emitting device shown in FIG.

In step S21, the light emitting structure for the light emitting element may be formed on the substrate for growth.

The light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and may be the nitride semiconductor described above. And may be grown on the growth substrate using a process such as MOCVD, MBE, and HVPE. The growth substrate may be an insulating, conductive or semiconductor substrate. For example, the growth substrate may be sapphire, SiC, Si, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN.

In step S22, a part of the first conductivity type semiconductor layer may be exposed to the light emitting structure.

This process can be realized by an etching process for partially removing the second conductive type semiconductor layer and the active layer. The exposed region of the first conductive semiconductor layer may be provided as an area for the first electrode.

In step S23, first and second electrodes may be formed on the exposed region of the first conductivity type semiconductor layer and one region of the second conductivity type semiconductor layer.

For example, the first and second electrodes may include a material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, As shown in FIG. Although not limited thereto, the first and second electrodes may be formed by a single electrode forming process, and the same electrode material may be used in this case.

In step S24, a temporary substrate (or a temporary support) may be provided on the surface of the light emitting structure on which the electrodes are formed.

Since the temporary substrate is a temporary supporting structure for temporarily supporting the light emitting structure in a subsequent process, a light transmitting property is not required, and a support of various materials can be used. The temporary substrate may be bonded by using various energy-curable bonding materials such as an ultraviolet curable resin as an adhesive. In addition, since the temporary substrate is removed again in the subsequent process, a temporary substrate and a bonding material which are easy to remove and clean can be selected and used.

In step S25, the growth substrate is removed from the light emitting structure.

The removal of the substrate for growth may be performed by various processes such as laser lift-off, mechanical polishing or mechanical-chemical polishing, chemical etching. For example, when the growth substrate is a sapphire substrate, a laser lift-off process may be used. In the case where the growth substrate is a silicon substrate, a mechanical or mechanical chemical polishing process may be used.

In step S26, irregularities are formed on the removed surface of the light emitting structure

Irregularities for light extraction enhancement can be formed on the surface from which the growth substrate is removed. The step of forming irregularities can be obtained by dry etching using a photoresist pattern. The concavities and convexities may have various shapes. For example, it is possible to sufficiently secure the filling rate of the concavo-convex (that is, the area occupied by the concavo-convex among the entire area of the surface), and the light extraction efficiency can be greatly improved. For example, the area of the first surface of the light emitting structure 30 may be 80% or more. Further, the area where the concavities and convexities P are formed may be 90% or more so as to further improve the light extraction efficiency.

In step S27, the light-transmitting supporting substrate is bonded to the surface of the light-emitting structure on which the concavo-convex is formed using the light-transmitting bonding layer.

The light transmissive supporting substrate may be a supporting substrate replacing the growth substrate and the temporary substrate. Since the light-transmitting supporting substrate is provided as a main path through which light is emitted, it may be made of a light-transmitting material. For example, the light-transmitting supporting substrate may be a glass substrate. If necessary, the thickness of the glass substrate can be adjusted using an additional polishing process.

The light-transmitting bonding layer provided between the light-transmitting support substrate and the light-emitting structure may include a material selected from polyacrylate, polyimide, polyamide, and benzocyclobutene (BCB). As described above, the translucent bonding layer may have a refractive index between the translucent support substrate and the light emitting structure so as to be used as a refractive index matching layer for improving light extraction efficiency. Further, the translucent bonding layer may be configured to act as a wavelength conversion layer for converting the wavelength of the emitted light.

In step S28, the temporary substrate is removed from the light emitting structure.

The temporary substrate can be removed after bonding the light-transmitting supporting substrate. This removal process may be performed using various processes such as chemical, mechanical, and physical (e.g., thermal shock) removal processes. When a curable resin layer is used for bonding the temporary substrate, a cleaning process for cleaning the surface of the electrode may be added.

The present embodiment can also be applied to a manufacturing process of various types of semiconductor light emitting devices. For example, the present invention can be advantageously applied to a nitride semiconductor light emitting device manufacturing process using a silicon substrate.

3 is a side sectional view showing a semiconductor light emitting device according to an embodiment of the present invention.

The semiconductor light emitting device 100 according to the present embodiment includes a light emitting structure 130 having a first conductivity type semiconductor layer 132 and a second conductivity type semiconductor layer 137 and an active layer 135 interposed therebetween, And a light-transmitting supporting substrate 171 for supporting the light-emitting structure 130.

The first and second conductive semiconductor layers 132 and 137 and the active layer 135 may be the nitride semiconductor described in FIG. The light emitting structure 130 has first and second surfaces provided by the first and second conductivity type semiconductor layers 132 and 137, respectively.

A hole penetrating the second conductive type semiconductor layer 137 and the active layer 135 is formed on the second surface of the light emitting structure 130 to reach one region of the first conductive type semiconductor layer 132 . The hole may be circular or hexagonal in plan view, but it may be a long extended stripe if necessary. The first electrode (E1) is disposed in the hole to be connected to the first conductive type semiconductor layer (132).

The second electrode E2 may be disposed on the upper surface of the second conductive type semiconductor layer 137. The second electrode E2 may further include an ohmic contact layer 154 and a second conductive layer 156b. The second conductive layer 156b may be the same material as the first conductive layer 156a constituting the first electrode E1. For example, the two top layers 156a and 156b may include materials such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Structure. Although not limited thereto, the first and second conductive layers 156a and 156b may be formed by a single electrode forming process, and the same electrode material may be used in this case. One example of such a process can be understood with reference to Figs. 4C to 4F.

An insulating layer 140 may be formed on the second surface of the light emitting structure 130 to define first and second contact regions C1 and C2 for forming electrodes. The insulating layer 140 may include first and second insulating layers 141 and 143. The first insulating layer 141 may be formed to open the first and second contact regions Cl and C2 and the second insulating layer 143 may open the first contact region C1, May be formed to cover the contact region C2.

A part of the first electrode E1 may extend to the upper surface of the insulating layer 140 and may have a portion overlapping the second electrode E2 with the insulating layer 140 interposed therebetween. First and second solder pads 158 and 159 may be formed on the overlapped portion of the first electrode E1 and the exposed portion of the second electrode E2, respectively. The first and second solder pads 158 and 159 may include an under bump metallurgy (UBM).

The light emitting structure 130 may include protrusions P formed on a first surface thereof. In this embodiment, the projections and depressions P may be protrusions (e.g., hexagons) having a triangular section in cross section, but may have various other shapes as required. The irregularities P may be formed by processing the surface of the first conductivity type semiconductor layer 132. The buffer layer (110 in FIG. 4A) used for growing the light emitting structure 130 may constitute at least a part of the protrusions P, unlike the present embodiment. The area of the first surface of the light emitting structure 130 where the concavities and convexities P are formed may be 80% or more. Furthermore, the area where the concavities and convexities P are formed may be 90% or more so as to further improve the light extraction efficiency of the device.

The light-transmitting support substrate 171 disposed on the first surface of the light-emitting structure 130 may be provided as a main path through which light generated from the active layer 135 is emitted. The light-transmissive support substrate 171 is a support substrate for replacing a growth substrate used for growing the light-emitting structure 130, for example, a glass substrate.

The light-transmitting support substrate 171 may be bonded to the first surface of the light-emitting structure 130 using a light-transmitting bonding layer 175. For example, the translucent bonding layer 175 may comprise a material selected from polyacrylate, polyimide, polyamide, and benzocyclobutene (BCB). The light-transmitting bonding layer 175 may be a layer for matching the refractive index between the light-transmitting support substrate 171 and the light-emitting structure 130. The refractive index of the transmissive bonding layer 175 may be between the refractive index of the transmissive support substrate 171 and the refractive index of the first conductivity type semiconductor layer 132. For example, when the translucent support substrate 171 is a glass having a refractive index of about 1.5, the translucent bonding layer 175 may be a material having a refractive index greater than 1.5 and less than 2.3 (e.g., BCB: 1.58) have.

The translucent bonding layer 175 employed in the present embodiment may include a wavelength conversion material 174 such as a phosphor. For example, the translucent bonding layer 175 may be formed of a BCB material in which red and green phosphors are dispersed. With this structure, the process for forming the wavelength conversion portion can be omitted or simplified.

As described above, by using the translucent bonding layer 175, the translucent support substrate 171 can be easily attached to the surface having the concavities and convexities, and the light of the element 100 can be transmitted through the refractive index matching using the refractive index of the translucent bonding layer 175 The extraction efficiency can be improved. In addition, by forming the wavelength converting material 174 in the light-transmitting bonding layer 175, it is possible to simplify the additional wavelength converting portion forming process.

FIGS. 4 and 5 are cross-sectional views of main processes for explaining a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention. The manufacturing method can be roughly classified into a device manufacturing process (FIGS. 4A to 4F) and a substrate replacement process (FIGS. 5A to 5F).

Referring to FIG. 4A, a buffer layer 110 may be formed on a substrate 101 for growth, and a light emitting structure 130 may be formed on the buffer layer 110 for a light emitting device. The light emitting structure 130 may include a first conductive semiconductor layer 132, an active layer 135, and a second conductive semiconductor layer 137.

The buffer layer 110 may be In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1). For example, the buffer layer 110 may be AlN, AlGaN, or InGaN. If necessary, a plurality of layers may be combined, or the composition may be gradually changed. When the growth substrate is a silicon substrate and a nitride semiconductor layer is grown as a light emitting structure, the buffer layer may have various types of composite buffer structures. This will be described with reference to FIG. 6 and FIG.

Each layer of the light emitting structure 130 may be the nitride semiconductor described in the previous embodiment. And may be grown on the growth substrate 110 using a process such as MOCVD, MBE, and HVPE.

4B, a hole H may be formed in the light emitting structure 130 to expose a portion of the first conductive semiconductor layer 132. Referring to FIG.

The present process can be implemented by an etching process for removing the second conductive type semiconductor layer 137 and a part of the active layer 135. A region of the first conductive semiconductor layer 132 exposed by the hole H may be provided as an area for the first electrode.

Next, first and second electrodes E1 and E2 connected to one region of the first conductivity type semiconductor layer 132 and one region of the second conductivity type semiconductor layer 137 may be formed .

In this embodiment, the electrode forming process can be realized by the processes of Figs. 4C to 4F.

First, as shown in FIG. 4C, the ohmic contact layer 154 may be formed on the upper surface of the second conductive type semiconductor layer 137.

In this process, after the first insulating layer 141 is formed on the entire upper surface of the light emitting structure 130, the region in which the ohmic contact layer 154 is to be formed is opened using a mask, Lt; RTI ID = 0.0 > 154 < / RTI >

The first insulating layer 141 may be SiO ₂ , Si ₃ N ₄ , HfO ₂ , SiON, TiO ₂ , Ta ₂ O _3, or SnO ₂ . As described above, the insulating layer 141 may be a DBR multilayer film alternately stacked with dielectric films having different refractive indices.

The ohmic contact layer 154 may include a highly reflective ohmic contact material having high reflectivity while forming an ohmic contact with the second conductive type semiconductor layer 137. For example, the ohmic contact layer 154 may comprise Ag or Ag / Ni. The ohmic contact layer 154 may further include a barrier layer. For example, the barrier layer may be Ti or Ni / Ti. The barrier layer may prevent some components of the solder bump formed in the subsequent process from diffusing, thereby maintaining the ohmic characteristics of the ohmic contact layer 154.

4D, a second insulating layer 143 having first and second openings O1 and O2 may be formed on the upper surface of the light emitting structure 130. Referring to FIG.

The first and second openings O1 and O2 may be formed to open the exposed region of the first conductive semiconductor layer 132 and a region of the second electrode 154, respectively. The opening may be formed by forming an insulating material on the entire upper surface and then forming the first insulating layer 143 using a mask for forming the first and second openings O1 and O2. The first and second openings O1 and O2 may define a contact area for the first and second electrodes. The second insulating layer 143 may be formed to cover the ohmic contact layer 154 located on a portion of the mesa region (denoted by "A"). The second insulating layer 143 may be understood as an insulating layer 140 for the first insulating layer 141 and the passivation. The second insulating layer 143 may be formed of the same material as the first insulating layer 141.

Next, as shown in FIG. 4E, first and second conductive layers 156a and 156b connected to the open regions of the first and second openings O1 and O2, respectively, can be formed.

The first conductive layer 156a may be provided as a first electrode E1 and the second conductive layer 156b may be provided as an ohmic contact layer 154 and a second electrode E2. The process includes forming a conductive layer on the insulating layer 140 so as to cover open regions of the first and second openings O1 and O2 and forming the conductive layer in the first and second openings O1 and O2 ) Divided into a first region and a second region which are respectively connected to the open regions of the first region and the second region. Here, the first and second regions of the conductive layer may be the first and second conductive layers 156a and 156b, respectively. For example, the first and second conductive layers 156a and 156b may include a material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Layer or two or more layers. A part of the first electrode E1 may extend to the upper surface of the insulating layer 140 in the mesa region A covered with the ohmic contact by the second insulating layer 143, And a portion overlapping with the second electrode E2.

In addition, as shown in FIG. 4F, first and second solder pads 158 and 159 may be formed in a part of the first electrode E1 and a part of the second electrode E2, respectively.

The first solder bump 158 may be disposed on a portion of the first electrode E1 located on the mesa region A. [ In the mesa region A, the ohmic contact layer 154 is covered with the second insulating layer 143, and a part of the first electrode E1 may extend to the region. As shown,

The first and second solder pads 158 and 159 may include an under bump metal (UBM) layer. For example, the first and second solder pads 158 and 159 may be a multilayer film of a Ti film and a Ni film disposed on the Ti film. If necessary, a Cu film may be used instead of the Ni film. In another example, it may be a Cr / Ni film or a multilayer film of Cr / Cu.

FIGS. 5A to 5F are cross-sectional views of major processes for explaining another part of a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention. In these processes, the substrate for growing the semiconductor light emitting element obtained above may be replaced with a light-transmitting supporting substrate.

Referring to FIG. 5A, the temporary support 160 may be provided on a second surface of the light emitting structure 130, that is, a surface on which the first and second electrodes E1 and E2 are formed.

The temporary support 160 may include a temporary bonding layer for bonding the temporary substrate 161 to the temporary substrate. For example, the temporary substrate 165 may be a quartz substrate. The temporary substrate 161 may be bonded using a temporary bonding layer 165 such as various energy curable resins such as an ultraviolet curable resin. In addition, the temporary substrate 161 and the temporary bonding layer 165 can be made of a material that can be easily removed and cleaned in a subsequent process.

Next, as shown in FIG. 5B, the substrate 101 for growth may be removed from the light emitting structure 130.

The removal of the growth substrate 101 can be performed by various processes such as laser lift-off, mechanical polishing or mechanical chemical polishing, and chemical etching. If a silicon substrate is used, the mechanical strength is relatively low and can be removed using a mechanical or mechanical chemical polishing process.

Although the buffer layer 110 is illustrated as being remained in the present embodiment, the present invention is not limited thereto, and at least a part of the buffer layer 110 may be removed together if necessary.

Next, as shown in FIG. 5C, irregularities P may be formed on the first surface of the light emitting structure 130, that is, the surface from which the substrate for growth 101 is removed

Irregularities P for improving light extraction can be formed directly on the surface of the light emitting structure (particularly, the surface of the first conductivity type semiconductor layer). The step of forming irregularities can be obtained by dry etching using a photoresist pattern. The thickness t1 corresponding to the second conductivity type semiconductor layer 132 and the buffer layer 110 can be reduced to a desired thickness t2 in the process of forming the concavities and convexities P. [ In another example, at least a part of the irregularities P may be formed in the buffer layer 110 by lowering the etching depth.

As described above, in the present step, there is no need for the plane between the irregularities P, and therefore, the filling rate of the irregularities P (that is, the area occupied by the irregularities in the entire area of the surface) As a result, the light extraction efficiency of the device can be greatly improved. For example, the area of the first surface of the light emitting structure 130 may be 80% or more, more preferably 90% or more.

5D, the light-transmitting supporting substrate 171 may be bonded to the first surface of the light-emitting structure 130, that is, the surface on which the unevenness P is formed using the light-transmitting bonding layer 175 .

The light-transmitting supporting substrate 171 may be a permanent supporting substrate replacing the growth substrate and the temporary substrate. Since the light-transmitting supporting substrate 171 is provided as a main path through which light is emitted, the light-transmitting supporting substrate 171 may be made of a light-transmitting material. For example, the light-transmitting supporting substrate 171 may be a glass substrate. The translucent bonding layer 175 may include a bonding material having a light transmitting property. As described above, the light-transmitting bonding layer 175 may have a refractive index between the light-transmitting support substrate 171 and the light-emitting structure 130 so as to be used as a refractive index matching layer for improving light extraction efficiency. In addition, the translucent bonding layer 175 may include a wavelength conversion material 174 for converting the wavelength of the emitted light, and may function as a wavelength converter.

The translucent support substrate 175 may be polished so that the thickness ta of the translucent support substrate 175 is reduced to a desired thickness tb as shown in FIG. 5E. Through this process, the desired thickness of the final device can be determined.

Next, as shown in FIG. 5F, the temporary support 160 may be removed from the light emitting structure 130. The present process can be performed in such a manner that the temporary bonding layer 165 is removed using a cleaning process after the temporary substrate 161 is removed.

According to the present embodiment, a light-transmitting bonding layer is introduced between the light-transmitting supporting substrate and the light-emitting structure to provide the light-transmitting supporting substrate on the surface of the light-transmitting supporting substrate on which the unevenness is formed. The translucent substrate may be utilized not only as a refractive index matching layer but also as a wavelength conversion structure.

<Uneven Filling rate  Evaluation>

The semiconductor light emitting device was manufactured similarly to the structure shown in FIG. 3 except that the wavelength conversion material was not included (Example 1). For comparison, a semiconductor light emitting device having a structure similar to that of FIG. 3 was fabricated using a substrate for growth on which unevenness was formed on the surface (Comparative Example 1).

Both Example 1 and Comparative Example 1 commonly include a concave-convex structure at the interface between the light emitting structure and the substrate. However, since the semiconductor light emitting device according to Comparative Example 1 forms irregularities on the substrate for growth, there is a limit to increase the filling rate of irregularities for crystal growth. As a result, the unevenness filling ratio employed in Comparative Example 1 was 58%. On the other hand, since the semiconductor light emitting device according to Example 1 is formed on the light emitting structure (particularly, the surface of the first conductivity type semiconductor layer) after removing the substrate for growth, the filling ratio of the concave and the convex can be increased up to 91%.

In order to confirm the effect of the difference in the unevenness filling rate, the light output was measured in a package having the same structure as the light output of the device of Example 1 and Comparative Example 1, and is shown in Table 1.

division Unevenness filling rate Light output of device Light output of package Example 0.91 102.7% 105% Comparative Example (standard) 0.58 100% 100%

As shown in Table 1, it was confirmed that the light output was improved to 2.7% in the case of the device and to 5% in the case of the package in the case of the embodiment 1 in which the unevenness filling rate can be increased. In general, when the unevenness filling rate is 80% or more, the light extraction efficiency can be greatly improved.

Hereinafter, a buffer layer used for growing a light emitting structure with a nitride semiconductor on a silicon substrate will be described as in the previous embodiment.

As shown in FIG. 6, the step of forming the buffer layer on the silicon substrate includes a step of forming a nucleus growth layer (S181) and a step of forming a lattice buffer layer (S183) disposed on the nucleus growth layer can do.

The step of forming the buffer layer according to this embodiment may start with forming a nucleated layer on the silicon substrate (S181).

The nucleation layer may be formed on the (111) plane of the silicon substrate. The nucleation layer may provide a growth surface with improved wettability. For example, the nucleation layer may be AlN. For example, the nucleation layer may have a size of tens to hundreds of nanometers.

Then, in step S183, a lattice buffer layer may be formed on the nucleation layer. The lattice buffer layer may be formed with a dislocation loop at the interface with the nitride crystal to be subsequently grown to reduce the dislocation density. In addition, the lattice buffer layer relaxes the lattice mismatch and the thermal expansion coefficient mismatch with the subsequently grown nitride single crystal, so that compressive stress can be effectively generated during crystal growth, and the tensile stress generated during cooling can be reduced . The lattice buffer layer may be made of a nitride crystal containing Al, and may be a single layer or a plurality of layers. For example, the lattice buffer layer may be a graded Al _x In _y Ga _{1 -xy} N (0? X, y? 1, x + ₁ ) where some component content, such as AlGaN, Al, y≤1) or _{Al x1 In y1 Ga 1 -x1- y1} N / Al x2 In y2 Ga 1 -x2-y2 N (0≤x1, x2, y1, y2≤1, x1 ≠ x2 or y1 ≠ y2, x1 + y1? 1, x2 + y2? 1) superlattice layer. In a specific example, the lattice buffer layer may be a structure in which AlGaN and AlN are alternately stacked. For example, the lattice buffer layer may be a three-layer structure of AlGaN / AlN / AlGaN.

The process of forming the nitride single crystal may include sequentially forming the first nitride semiconductor layer, the intermediate layer, and the second nitride semiconductor layer on the lattice buffer layer (S184, S186, and S188).

The process of forming the nitride single crystal may start with the step of forming the first nitride semiconductor layer on the lattice buffer layer (S184).

The first nitride semiconductor layer may be a nitride crystal having a larger lattice constant than the lattice buffer layer. The first nitride semiconductor layer may include Al _x In _y Ga _{1 -x- y} N (0? X, y? 1, x + y <1). For example, the first nitride semiconductor layer may be GaN.

The first nitride semiconductor layer may receive compressive stress at the interface with the lattice buffer layer. When the first nitride semiconductor layer is cooled to room temperature after completion of the growth process, tensile stress may be generated due to a difference in thermal expansion coefficient between the substrate and the first nitride semiconductor layer. have. In order to compensate for such stress, an intermediate layer may be formed on the first nitride semiconductor layer in step S186. The intermediate layer may be a nitride crystal having a smaller lattice constant than the first nitride semiconductor layer. For example, the intermediate layer may be Al _x Ga _{1 -x} N (0.4 <x <1).

Subsequently, in step S188, a second nitride semiconductor layer may be formed on the intermediate layer. The second nitride semiconductor layer may have a high compressive stress. The compressive stress of the second nitride semiconductor layer compensates for the relatively weak compressive stress or tensile stress of the first nitride semiconductor layer, thereby reducing the crack. The second nitride semiconductor layer may include Al _x In _y Ga _{1 -x- y} N (0? X, y? 1, x + y <1) similarly to the first nitride semiconductor layer. For example, the second nitride semiconductor layer may be GaN. The GaN used as the first and second nitride semiconductor layers may be undoped GaN.

In a specific embodiment, a nitride stack having at least one nitride semiconductor layer on the second nitride semiconductor layer may be additionally formed. The nitride semiconductor layer may be formed of Al _x In _y Ga _{1 -x- y} N (0? X, y? 1, x + y? 1), and may be an undoped layer or an n-type and / Lt; / RTI &gt; For example, the nitride semiconductor layer may be a plurality of semiconductor layers provided as elements for performing a specific function.

7A to 7D are cross-sectional views showing various examples of structures of a buffer layer and a stress compensation layer which can be employed in an embodiment of the present invention. In the embodiment shown in Figs. 3 and 4A, an additional stress compensation layer structure other than the buffer layer 110 may be introduced.

The buffer layer 210, the stress compensation layer 220 and the nitride layered body 230 may be sequentially arranged on the silicon substrate 201 as shown in FIG. 7A.

The silicon substrate 201 may include not only a substrate made of a silicon material but also a substrate partially including a silicon material. For example, a silicon-on-insulator (SOI) substrate may also be used. The upper surface of the silicon substrate 201 may be a (111) surface. The buffer layer 210 may include a nucleation layer 212 disposed on the silicon substrate 201 and a lattice buffer layer 214 disposed on the nucleation layer 212.

The nucleation layer 212 may be AlN. The lattice buffer layer 214 may bend the threading dislocations to reduce defects. The greater the thickness of the lattice buffer layer 214, the smaller the compressive stree relaxation in the first nitride semiconductor layer 221 to be grown subsequently and the lower the defect. The thickness of the lattice buffer layer 214 may be several hundred nanometers to several micrometers thick.

The lattice buffer layer 214 may have a single composition, but as shown in FIG. 4, the lattice buffer layer 214 may include Al _x In _y Ga _{1 -x- y} N (0? X, y? 1, x + y 1). &Lt; / RTI &gt; The layer structure employed in this embodiment includes a plurality of layers 214-1, 214-2, ... 214-n, wherein the plurality of layers 214-1, 214-2, ... 214- And may have a step-graded structure in which the composition is sequentially reduced. In a specific example, the lattice buffer layer 214, which is a grade structure, can be implemented as a three-component AlGaN to control the Al composition. In another example, the lattice buffer layer may take a linearly graded structure rather than a step grade structure.

This lattice buffer layer 214 can reduce the lattice mismatch between the AlN nucleation layer 212 and the first nitride semiconductor layer 221 step by step. In particular, since the lattice buffer layer 214 can effectively generate compressive stress during crystal growth, the tensile stress generated during cooling can be reduced.

The stress compensation layer 220 may include a first nitride semiconductor layer 221, an intermediate layer 222, and a second nitride semiconductor layer 223 sequentially disposed on the lattice buffer layer 214.

The first nitride semiconductor layer 221 may be a nitride crystal having a larger lattice constant than the lattice buffer layer 223. The first nitride semiconductor layer 221 may include Al _x In _y Ga _{1 -x- y} N (0? X, y? 1, x + y <1) . The first nitride semiconductor layer 221 may receive compressive stress at the interface with the lattice buffer layer 214.

This compressive stress can be alleviated as the thickness of the first nitride semiconductor layer 221 is larger. When the thickness of the first nitride semiconductor layer 221 (about 2 탆 or more) is increased, a difference in thermal expansion coefficient between the substrate 201 and the first nitride semiconductor layer 221 It is difficult to control the tensile stress caused by the cracks, and even cracks may occur.

The intermediate layer 222 may be disposed on the first nitride semiconductor layer 221 to compensate for tensile stress generated during cooling. The intermediate layer 222 may be a nitride crystal having a smaller lattice constant than the first nitride semiconductor layer 221. For example, the intermediate layer 222 may be Al _x Ga _{1 -x} N (0.4 <x <1).

The second nitride semiconductor layer 223 may be disposed on the intermediate layer 222. The second nitride semiconductor layer 223 may have compressive stress. The compressive stress of the second nitride semiconductor layer 223 compensates for the relatively weak compressive stress or tensile stress received by the first nitride semiconductor layer 221, thereby suppressing the occurrence of cracks. The second nitride semiconductor layer 223 includes Al _x In _y Ga _{1 -x- y} N (0? X, y? 1, x + y <1) similar to the first nitride semiconductor layer 221 can do. For example, the second nitride semiconductor layer 223 may be GaN. At least one of the first and second nitride semiconductor layers 221 and 223 may be, but is not limited to, an undoped nitride layer.

The nitride layered body 230 may correspond to the light emitting structure 30 or 130 in the above-described embodiment.

Referring to FIG. 7B, a buffer layer 210, a stress compensation layer 220, and a nitride stack 230 are sequentially arranged on a silicon substrate 201, similar to FIG. 7A.

The components indicated by the same reference numerals as those in FIG. 7A can be combined with the description of this embodiment with reference to the description of FIG. 7A unless otherwise specified.

The buffer layer 210 includes an AlN nucleation layer 212 and a lattice buffer layer 214 'similar to the buffer layer 210 shown in FIG. 7A. The lattice buffer layer 214' And has a different structure from the lattice buffer layer 214 shown in Fig.

The lattice buffer layer 214 'may have a superlattice structure in which two or more layers 214a and 214b having different compositions are alternately stacked. For example, the lattice buffer layer 214 'may be formed of Al _x1 In _y1 Ga _{1 -x1- y1} N / Al _x2 In _y2 Ga ₁ -x2 _-y2 N (0? X1, x2, y1, _y2 ? x2 or y1? y2, x1 + y1? 1, x2 + y2? 1) superlattice layer. As in the present embodiment, the lattice buffer layer 214 'employing the superlattice structure can also effectively relax the stress between the silicon substrate 201 and the first nitride semiconductor layer 221.

The stress compensation layer 220 employed in the present embodiment has a structure in which the first and second nitride semiconductor layers 221 and 223 described in FIG. 4 and the first intermediate layer 222 disposed therebetween, as well as the second intermediate layer 224 And a third nitride semiconductor layer 225 may be included.

It is understood that the second intermediate layer 224 and the third nitride semiconductor layer 225 perform functions similar to those of the first intermediate layer 222 and the second nitride semiconductor layer 223. That is, the second intermediate layer 224 may be disposed on the second nitride semiconductor layer 223 to compensate the tensile stress generated during cooling. The second intermediate layer 224 may be a nitride crystal having a smaller lattice constant than the second nitride semiconductor layer 224. [ For example, the second intermediate layer 224 may be Al _x Ga _{1 -x} N (0.4 <x <1) similarly to the first intermediate layer 222.

The third nitride semiconductor layer 225 may be disposed on the second intermediate layer 224. The third nitride semiconductor layer 225 has compressive stress and the compressive stress of the third nitride semiconductor layer 225 is relatively weaker than that of the underlying first and second nitride semiconductor layers 221 and 223, The occurrence of cracks can be suppressed by compensating the compressive stress or the tensile stress.

The third nitride semiconductor layer 225 includes Al _x In _y Ga _{1 -x- y} N (0? X, y? 1, x + y <1) similar to the second nitride semiconductor layer 223 can do. For example, the third nitride semiconductor layer 225 may be GaN.

Referring to FIG. 7C, a buffer layer 210, a stress compensation layer 220, and a nitride stack 230 are sequentially arranged on a silicon substrate 201, similar to FIG. 7A. However, unlike the example shown in FIG. 7A, a mask layer 226 and a coalesced nitride layer 227 formed in the mask layer 226 are included.

The mask layer 226 may be disposed on the first nitride semiconductor layer 221.

Most of the threading dislocations from the first nitride semiconductor layer 221 are blocked by the mask layer 226 and the remaining part of the threading dislocations are also bending ). As a result, the defect density of the subsequently grown nitride crystal can be greatly improved. The thickness and defect density of the coalescence nitride layer 227 may vary depending on variables such as growth conditions, such as temperature, pressure, and molar composition ratio of the V / III source.

The mask layer 226 may be formed of silicon nitride (SiN _x ) or titanium nitride (TiN). For example, the SiN _x mask layer 226 can be formed using silane (SiH ₄ ) and ammonia gas. The mask layer 226 may not completely cover the surface of the first nitride semiconductor layer 221. Accordingly, the exposed region of the first nitride semiconductor layer 221 is determined according to the degree of covering the first nitride semiconductor layer 221, and the initial island growth pattern of the nitride crystal grown thereon . For example, when increasing the mask region of SiN _x and reducing the area of the exposed nitride semiconductor layer, the density of the initial island of the nitride layer 227 to be grown on the mask layer 226 is reduced , The size of the relatively integrated island can be large. Thus, the thickness of the coalesced nitride layer 227 can also be increased.

When the mask layer 226 is added, the stress between the nitride semiconductor layers may be decoupled by the mask layer to partially block the compressive stress transmitted to the co-nitride layer 227. In addition, relative tensile stress may be generated in the coalescence layer 227 during the process of coalescence of the growing islands. As a result, the first nitride semiconductor layer 221 is subjected to a strong compressive stress by the buffer layer 210 while the coalescing nitride layer 227 on the mask layer 226 is subjected to stress relief and coalescence, Lt; RTI ID = 0.0 &gt; tensile &lt; / RTI &gt; If the thickness of the layer having a relatively small compressive stress exceeds the critical point, cracks will occur in the thin film during cooling, so that the thickness of the coalescence nitride layer 227 can be reduced under the condition that cracks are not generated, Can be selected.

Referring to FIG. 7D, a buffer layer 210, a stress compensation layer 220, and a nitride stack 230 are sequentially disposed on a silicon substrate 201.

The stress compensation layer 220 employed in this embodiment may include first and second nitride semiconductor layers 220a and 220b formed under different growth conditions. The first nitride semiconductor layer 220a is grown in a two-dimensional mode so that an increase rate of the surface roughness is controlled, thereby reducing the occurrence of twist grain boundary at the interface with the second nitride semiconductor layer 220b have

The first nitride semiconductor layer 220a is formed under a first growth condition so that the surface roughness of the buffer layer 210 has an illuminance ratio of 3 or less and the second nitride semiconductor layer 220b is formed under the first growth condition, And may be formed under the second growth condition on the nitride semiconductor layer 220a. Here, at least one of the temperature, the pressure, and the V / III group molar ratio may be different from the first growth condition so that the three-dimensional growth mode is higher than the first growth condition. The first nitride semiconductor layer 220a may have a thickness ranging from 2 to 1000 nm. As the thickness of the first nitride semiconductor layer 220a increases, the generation of the twist grain boundary at the interface between the first and second nitride semiconductor layers 220a and 220b may be reduced. However, if the thickness of the first nitride semiconductor layer 220a is increased, the crystallinity of the entire thin film may be deteriorated because the first nitride semiconductor layer is grown at a relatively low temperature as compared with the nitride layer, Because. Therefore, it is preferable to reduce the thickness of the first nitride semiconductor layer 220a while reducing the occurrence of twist grain boundaries.

When the twist grain boundary is decreased, defects of the second nitride semiconductor layer 220b stacked on the first nitride semiconductor layer 220a can be reduced. That is, the first nitride semiconductor layer 120 has a thickness in the range of 2 to 1000 nm, and has a roughness ratio of 3 or less as a ratio of the roughness of the buffer layer, so that the defect of the second nitride semiconductor layer 220b Can be reduced. Therefore, even if the mask layer is not used, the entire thickness of the buffer layer 210 and the stress compensation layer 220 can be reduced to 6 μm or less can do. Therefore, the process time and cost of the crystal growth step can be reduced.

The second nitride semiconductor layer 220b may be formed of Al _x In _y Ga _{1 -xy} N (0? X, y? 1, x + y <1). The second nitride semiconductor layer 220b may be continuously grown on the first nitride semiconductor layer 220a without further growth of layers of other compositions. The second nitride semiconductor layer 220b may have the same composition as the first nitride semiconductor layer 220a. For example, the first and second nitride semiconductor layers 220a and 220b may be GaN. In a specific example, the first nitride semiconductor layer 220a may be undoped GaN, and the second nitride semiconductor layer 220b may be n-type GaN.

The semiconductor light emitting device shown in Fig. 3 can be used in the semiconductor light emitting device package (Figs. 8 and 9). In this case, various types of wavelength conversion units may be additionally provided.

8 is a side sectional view showing a semiconductor light emitting device package according to an embodiment of the present invention.

8, the semiconductor light emitting device package 340 according to the present embodiment includes a package substrate 310 having a mounting surface, a semiconductor light emitting device 50 mounted on a mounting surface of the package substrate 310, .

The package substrate 310 may include first and second wiring electrodes 312a and 312b disposed on the mounting surface. The first and second wiring electrodes 312a and 312b may extend to a lower surface or a side surface of the package substrate 310. [ The package substrate 310 may include an insulating resin, a ceramic substrate, and the like. The first and second wiring electrodes 312a and 312b may include a metal such as Au, Cu, Ag, or Al. For example, the package substrate 310 may be a printed circuit board (PCB), a metal core PCB (MCPCB), a metal PCB (MPCB), or a flexible PCB (FPCB).

The first and second electrodes E1 and E2 are mounted on the semiconductor light emitting device 100 such that solder bumps 315a are formed on the surfaces of the first and second electrodes E1 and E2, 315b may be connected to the first and second wiring electrodes 312a, 312b, respectively.

A wavelength conversion film 344 may be disposed on the upper surface of the semiconductor light emitting device 100 mounted on the package substrate 310, that is, on the light-transmitting supporting substrate as a wavelength converting portion. The wavelength conversion film 344 includes a wavelength conversion material for converting a part of the light emitted from the semiconductor light emitting element 50 to another wavelength. The wavelength converting film 344 may be a resin film in which the wavelength converting material is dispersed or a ceramic film made of a sintered body of a ceramic fluorescent substance. When the semiconductor light emitting device 50 emits blue light, the wavelength conversion film 344 converts a part of the blue light into yellow and / or red and green to emit white light. ). &Lt; / RTI &gt; 3, the wavelength conversion material 174 of the translucent bonding layer 175 includes a first wavelength conversion material that converts light into a first wavelength light, and the wavelength conversion material The wavelength converting material of the first wavelength converting material 344 may include a second wavelength converting material that converts light of a second wavelength shorter than the first wavelength. The wavelength converting material usable in this embodiment will be described later (see Table 2 below).

9 is a side sectional view showing a semiconductor light emitting device package according to an embodiment of the present invention.

The semiconductor light emitting device package 360 shown in FIG. 9 includes a package substrate 350 having a mounting surface and a semiconductor light emitting diode (LED) 360, which is flip-chip bonded on the mounting surface of the package substrate 350, And a chip 360.

The package substrate 350 may have a structure in which the first and second wiring electrodes 352a and 352b, which are lead frames, are bound together by an insulating resin part 351. [ The package substrate 350 may be disposed on a mounting surface and may further include a reflective structure 356 to surround the semiconductor light emitting device 100. The reflective structure 356 may have a cup shape whose inner surface is inclined. The wavelength converting portion 364 employed in this embodiment may include a wavelength converting material 364a and a resin packing portion 364b containing the wavelength converting material 364a. The wavelength conversion unit 364 may be formed to cover the semiconductor light emitting device 100 in the reflective structure 356.

Alternatively, as described in FIG. 3, the wavelength conversion material may be embodied in a manner that the wavelength conversion material is contained in other components of the semiconductor light emitting device. These various embodiments are illustrated in Figures 10-13.

The semiconductor light emitting device 50a shown in FIG. 10 is different from the semiconductor light emitting device 50 shown in FIG. 1 except that the wavelength converting material 74 is contained in the light- (50). &Lt; / RTI &gt; The constituent elements of the present embodiment can be understood with reference to the description of the same or similar components of the semiconductor light emitting element 50 shown in FIG. 1, unless otherwise specified.

In this embodiment, the translucent bonding layer 75 may serve as a wavelength conversion element. And a wavelength conversion material 74 that converts at least a part of the light of the first wavelength generated from the active layer 35 into light of the second wavelength. The translucent bonding layer 75 may comprise at least one bonding material selected from the group consisting of silicone, epoxy, polyacrylate, polyimide, polyamide and benzocyclobutene. The wavelength conversion material 74 may be mixed with the bonding material before curing to provide the translucent bonding layer 75 as a wavelength conversion element.

The semiconductor light emitting device 50a may further include an optical filter layer 76 disposed on an upper surface of the light-transmitting supporting substrate 71 (that is, a surface from which light is emitted). The optical filter layer 76 may be configured to selectively transmit light of a desired wavelength band, while selectively blocking light of an undesired wavelength band. For example, the optical filter layer 76 may be an omnidirectional reflection layer (ODR) or a Bragg reflection layer (DBR). In this case, the optical filter layer 76 may be formed by alternately forming two kinds of dielectric layers having different refractive indices. Alternatively, the optical filter layer 76 may comprise a material such as a dye.

The optical filter layer 76 is not converted to enhance the ratio of the light of the second wavelength (for example, green or red) converted by the wavelength converting material 74 contained in the translucent bonding layer 75 in the finally emitted light (E.g., blue light) of the first wavelength, which is not the first wavelength.

In this embodiment, the optical filter layer 76 is illustrated as being disposed on the upper surface of the light-transmissive support substrate 71, but may be arranged at other positions as required. For example, between the light-transmissive support substrate 71 and the translucent bonding layer 75 (see FIG. 13).

Also, the surface to which the translucent bonding layer 75 is applied may be different. As in the present embodiment, the first conductivity type semiconductor layer 32 'may not have irregularities on the bonding surface. In another example, the remaining surface may be used as the bonding surface without completely removing the substrate for growth or the buffer layer.

The semiconductor light emitting element 50b shown in Fig. 11 is different from the semiconductor light emitting element 50b shown in Fig. 10 except that the wavelength converting material 74 is contained in the light- (50a). &Lt; / RTI &gt;

The light-transmitting support substrate 71 may be a phosphor or a support containing a wavelength conversion material such as a quantum dot. For example, the translucent support substrate 71 may be made of a translucent liquid resin such as a silicone resin or an epoxy resin mixed with a wavelength conversion material. As another example, when the translucent support substrate 71 is a glass substrate, a support containing the wavelength conversion material can be manufactured by mixing a wavelength conversion material such as a phosphor with a glass composition and firing the mixture at low temperature.

A color filter layer 77 may be disposed on the optical filter layer 76. The color filter layer may selectively transmit light of a desired one of the converted wavelengths. In the emission spectrum of the finally emitted light, the color filter layer 77 can form a narrow half width.

The semiconductor light emitting element 50c shown in Figure 12 can be understood to be similar to the semiconductor light emitting element 50a shown in Figure 10 except that a color filter layer 77 and a light diffusing layer 78 are added.

The semiconductor light emitting element 50c may include a light diffusion layer 78 together with the color filter layer 77 described in FIG. As such, additional optical elements can be included to alter the properties of the final emitted light. And may be disposed on the optical filter layer 76. The color filter layer may selectively transmit light of a desired one of the converted wavelengths. In the emission spectrum of the finally emitted light, the color filter layer 77 can form a narrow half width.

The semiconductor light emitting element 50d shown in Fig. 13 is different from the semiconductor light emitting element 50d in that the optical filter layer 76, the color filter layer 77, and the light diffusion layer 78 are disposed between the transparent support substrate 71 and the translucent bonding layer 75 It can be understood that it is similar to the semiconductor light emitting element 50c shown in Fig.

The optical filter layer 76, the color filter layer 77 and the light diffusion layer 78 may be disposed between the light-transmitting supporting substrate 71 and the light-transmitting bonding layer 75, as in the present embodiment. The light filter layer 76, the color filter layer 77 and the light diffusion layer 78 may be provided as a single laminate before being bonded to the light emitting structure 30 on one side of the light transmissive support substrate 71, as needed.

In the above-described embodiments, various materials such as phosphors and / or quantum dots may be used as the wavelength converting material. For example, the above-described semiconductor light emitting device may be provided with a white light emitting device including at least one wavelength converting element that converts light into different wavelength light. For example, a yellow phosphor or a combination of green and red phosphors.

FIG. 14 is a CIE 1931 coordinate system for explaining a wavelength conversion material applicable to a semiconductor light emitting device or a semiconductor light emitting device package according to an embodiment of the present invention.

In a single light emitting device package, light of a desired color can be determined according to the wavelength of the LED chip, which is a light emitting element, and the type and blending ratio of the phosphor. In the case of the white light emitting device package, the color temperature and the color rendering property can be controlled.

For example, the semiconductor light emitting device according to the above embodiments can emit white light in combination with appropriate phosphors from yellow, green, red, and blue phosphors, and can emit white light with various color temperatures depending on the blending ratio of the selected phosphors. have.

In this case, the illuminating device can adjust the color rendering property from sodium (Na) to sunlight level, and can generate various white light with a color temperature ranging from 1500 K to 20000 K. If necessary, the color of purple, blue, green, Orange visible light or infrared light can be generated to adjust the illumination color according to the ambient atmosphere or mood. The illumination device may also generate light of a particular wavelength that can promote plant growth.

White light made of a combination of yellow, green, red, blue phosphors and / or green and red light emitting elements in the semiconductor light emitting device has two or more peak wavelengths and has a peak wavelength of (x, y coordinates can be located in the segment region connecting (0.4476, 0.4074), (0.3484, 0.3516), (0.3101, 0.3162), (0.3128, 0.3292), (0.3333, 0.3333). Alternatively, the (x, y) coordinate may be located in an area surrounded by the line segment and the blackbody radiation spectrum. The color temperature of the white light corresponds to the range of 1500 K to 20000 K. In FIG. 14, the white light in the vicinity of the point E (0.3333, 0.3333) below the black body radiation spectrum is in a state in which the light of the yellowish component is relatively weak, It can be used as an illumination light source. Therefore, the lighting product using the white light near the point E (0.3333, 0.3333) at the lower part of the blackbody radiation spectrum (that is, the plankiness square) is effective as a commercial lighting for selling foodstuffs, clothing and the like.

The adoptable phosphor may have the following composition formula and color.

Oxide system: yellow and green Y ₃ Al ₅ O ₁₂ : Ce, Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce

(Ba, Sr) ₂ SiO ₄ : Eu, yellow and orange (Ba, Sr) ₃ SiO ₅ : Ce

The nitride-based: the green β-SiAlON: Eu, yellow _{La 3 Si 6 N 11: Ce} , orange-colored α-SiAlON: Eu, red _{CaAlSiN 3: Eu, Sr 2 Si} 5 N 8: Eu, SrSiAl 4 N 7: Eu, SrLiAl _{3 N 4: Eu, Ln 4} -x (Eu z M 1 -z) x Si 12- y Al y O 3 + x + y N 18 -xy (0.5≤x≤3, 0 <z <0.3, 0 <y &Lt; / RTI &gt;&lt; RTI ID = 0.0 &gt;

In the formula (1), Ln is at least one kind of element selected from the group consisting of a Group IIIa element and a rare earth element, and M is at least one element selected from the group consisting of Ca, Ba, Sr and Mg .

Fluoride (fluoride) type: KSF-based Red _{^{K 2 SiF 6: Mn 4 +}} , K 2 TiF 6: Mn 4 +, NaYF 4: Mn 4 +, NaGdF 4: Mn 4+, K 3 SiF 7: Mn 4 +

The phosphor composition should basically conform to the stoichiometry, and each element can be replaced with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg and the like of the alkaline earth (II) group, and Y can be substituted with lanthanide series Tb, Lu, Sc, Gd and the like. In addition, Eu, which is an activator, can be substituted with Ce, Tb, Pr, Er, Yb or the like according to a desired energy level.

Table 2 below shows the types of phosphors for application fields of white light emitting devices using UV LED chips (200 to 430 nm).

Usage Phosphor LED TV BLU ^{β-SiAlON: Eu 2 +,} (Ca, Sr) AlSiN 3: Eu 2 +, La 3 Si 6 N 11: Ce 3 +, K 2 SiF 6: Mn 4 +, SrLiAl 3 N 4: Eu, Ln 4 - _{x (Eu z M 1 -z)} x Si 12- y Al y O 3 + x + y N 18 -xy (0.5≤x≤3, 0 <z <0.3, 0 <y≤4), K 2 TiF 6: Mn ^{4 +} , NaYF ₄ : Mn ^{4 +} , NaGdF ₄ : Mn ^{4 +} light _{Lu 3 Al 5 O 12: Ce} 3 +, Ca-α-SiAlON: Eu 2 +, La 3 Si 6 N 11: Ce 3 +, (Ca, Sr) AlSiN 3: Eu 2+, Y 3 Al 5 O 12 _{^{: Ce 3 +, K 2 SiF}} 6: Mn 4 +, SrLiAl 3 N 4: Eu, Ln 4 -x (Eu z M 1-z) x Si 12-y Al y O 3 + x + y N 18-xy (0.5≤x≤3, 0 <z <0.3 , 0 <y≤4), K 2 TiF 6: Mn 4+, NaYF 4: Mn 4 +, NaGdF 4: Mn 4 + Side View
(Mobile, Note PC) _{Lu 3 Al 5 O 12: Ce} 3 +, Ca-α-SiAlON: Eu 2 +, La 3 Si 6 N 11: Ce 3 +, (Ca, Sr) AlSiN 3: Eu 2+, Y 3 Al 5 O 12 ^{: Ce 3 +, (Sr,} Ba, Ca, Mg) 2 SiO 4: Eu 2 +, K 2 SiF 6: Mn 4+, SrLiAl 3 N 4: Eu, Ln 4 -x (Eu z M 1 -z) _{x Si 12- y Al y O 3} + x + y N 18 -xy (0.5≤x≤3, 0 <z <0.3, 0 <y≤4), K 2 TiF 6: Mn 4 +, NaYF 4: Mn 4 ⁺ , NaGdF ₄ : Mn ^{4 +} Battlefield
(Head Lamp, etc.) _{Lu 3 Al 5 O 12: Ce} 3 +, Ca-α-SiAlON: Eu 2 +, La 3 Si 6 N 11: Ce 3 +, (Ca, Sr) AlSiN 3: Eu 2+, Y 3 Al 5 O 12 _{^{: Ce 3 +, K 2 SiF}} 6: Mn 4 +, SrLiAl 3 N 4: Eu, Ln 4 -x (Eu z M 1-z) x Si 12-y Al y O 3 + x + y N 18-xy (0.5≤x≤3, 0 <z <0.3 , 0 <y≤4), K 2 TiF 6: Mn 4+, NaYF 4: Mn 4 +, NaGdF 4: Mn 4 +

As a wavelength converting material, a quantum dot (QD) may be used instead of a phosphor or mixed with a phosphor. The quantum dot can realize various colors depending on the size, and in particular, when used as a substitute for a phosphor, it can be used as a red or green phosphor. When a quantum dot is used, a narrow bandwidth (for example, about 35 nm) can be realized.

The wavelength converting material may be contained in the encapsulating material. Alternatively, the wavelength converting material may be previously prepared in the form of a film and attached to the surface of an optical structure such as a semiconductor light emitting device or a light guide plate. In this case, The conversion material can be easily applied to a desired area with a uniform thickness structure. And can be advantageously used for various light source devices such as a backlight unit or a display device or a lighting device (see Figs. 36 to 44).

FIGS. 15A and 15B are side cross-sectional views of a semiconductor light emitting device according to an embodiment of the present invention; and FIG. 15C is a rear view of the semiconductor light emitting device shown in FIG. 15A.

Specifically, FIG. 15B is a cross-sectional view of the semiconductor light emitting device 500 shown in FIG. 15A, with the electrode structure omitted. The semiconductor light emitting device 500 according to an exemplary embodiment of the present invention may be a chip scale package (CSP) or a wafer level package (WLP). As used herein, the terms &quot; upper, &quot; &quot; upper, &quot; &quot; upper, &quot; &quot; lower, &quot; Depending on the direction in which the package is placed. The drawings in this specification show only necessary components.

The semiconductor light emitting device 500 may include a light emitting structure 515p including a first conductivity type semiconductor layer 509p, an active layer 511p, and a second conductivity type semiconductor layer 513p. The first conductivity type semiconductor layer 509p may be an n-type semiconductor layer. The second conductivity type semiconductor layer 513p may be a p-type semiconductor layer.

The first conductive semiconductor layer 509p and the second conductive semiconductor layer 513p may be made of a nitride semiconductor, for example, a GaN / InGaN material. The first conductive semiconductor layer 509p and the second conductive semiconductor layer 513p may be formed of a nitride semiconductor, for example, Al _x In _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? X + y &lt; / = 1). The first conductive semiconductor layer 509p and the second conductive semiconductor layer 513p may be formed of a single layer, but may have a plurality of layers having different doping concentration, composition, and the like. In addition to the nitride semiconductor, the first conductivity type semiconductor layer 509p and the second conductivity type semiconductor layer 513p may be made of AlInGaP or AlInGaAs semiconductor.

The active layer 511p disposed between the first conductivity type semiconductor layer 509p and the second conductivity type semiconductor layer 513p emits light having a predetermined energy by recombination of electrons and holes, A GaN / InGaN structure can be used when it is a multiple quantum well (MQW) structure in which the quantum barrier layers are alternately stacked, for example, a nitride semiconductor. The active layer 511p may be a single quantum well (SQW) structure using a nitride semiconductor.

The light-emitting structure 515p may have a first through-hole 527 formed therein. The first through-hole 527 can also be termed a first through via hole or a first via hole. The first through-hole 527 may pass through the first conductive type semiconductor layer 509p, the active layer 511p, and the second conductive type semiconductor layer 513p as shown in FIG. 15B.

An etch stopping layer 517p including a second penetrating opening 529 communicating with the first penetrating opening 527 on the upper surface of the second conductivity type semiconductor layer 513p constituting the light emitting structure 515p, Can be formed. The second through-hole 529 can also be termed a second through via hole or a second via hole. The etch stop layer 517p may function to prevent etching when forming the first through-hole 527 as described later. The second through-hole 529 may be formed in the etch stop layer 517p. The etch stop layer 517p may be composed of a silicon oxide layer (SiO2).

A current spreading layer 519 may be formed on the upper surfaces of the second conductive type semiconductor layer 513p, the second through opening 529 and the etching stop layer 517p constituting the light emitting structure 515p have. The current distribution layer 519 may be formed of an indium tin oxide (ITO) layer. The current distribution layer 519 is formed on the upper surface of the second conductive type semiconductor layer 513p constituting the light emitting structure 515p, the upper surface of the second through opening 529 and the upper surface and side surfaces of the etching stop layer 517p. . The current distribution layer 519 may be provided to apply a voltage to the second conductive type semiconductor layer 513p.

The semiconductor light emitting device 500 may have a reflective layer 533p formed on the inner walls of the first through-hole 527 and the second through-hole 529 and on the bottom surface of the first conductive semiconductor layer 509. The reflective layer 533p may serve to reflect light generated in the light emitting structure 515p. The reflective layer 533p can be formed as needed. The reflective layer 533p may be formed of silver (Ag) or copper (Cu). The reflection layer 533p may be a distributed Bragg reflector. The dispersion Bragg reflection layer may be a multilayer reflective layer in which a first insulating film having a first refractive index and a second insulating film having a second refractive index are alternately laminated.

In the semiconductor light emitting device 500, the electrode structures 531_1, 537_1, 539_1, 531_2, 537_2, and 539_2 may be formed on the lower surface of the first conductivity type semiconductor layer 509p. The electrode structures 531_1, 537_1, 539_1, 531_2, 537_2, and 539_2 may be formed of a conductive material layer, for example, a metal layer. The electrode structures 531_1, 537_2, 539_1, 531_2, 537_2 and 539_2 may include first electrode structures 531_1, 537_1 and 539_1 and second electrode structures 531_2, 537_2 and 539_2.

The first electrode structures 531_1, 537_1 and 539_1 include a first contact layer 531_1 formed on the lower surface of the first conductivity type semiconductor layer 509p and a first electrode layer 537_1 electrically connected to the first contact layer 531_1 , 539_1). The first electrode layers 537_1 and 539_1 may be termed first via electrode layers. The first electrode structures 531_1, 537_1 and 539_1 may be electrically connected to the first conductivity type semiconductor layer 509p on the lower surface of the first conductivity type semiconductor layer 509p. The first contact layer 531_1 may be an n-type contact layer.

The second electrode structures 531_2, 537_2 and 539_2 are electrically connected to the second contact layer 531_2 formed on the lower surface of the current distribution layer 519 in the second through opening 529 and the second contact layer 531_2 formed on the lower surface of the current distribution layer 519 in the second through- And second electrode layers 537_2 and 539_2. The second electrode layers 537_2 and 539_2 may be termed second via electrode layers. The second electrode structures 531_2, 537_2 and 539_2 are electrically connected to the current distribution layer 519 through the first through-hole opening 527 and the second through-hole opening 529 on the lower surface of the first conductive type semiconductor layer 509p Can be connected. The second electrode structures 531_2, 537_2, and 539_2 may be electrically connected to the second conductive type semiconductor layer 513p. The second contact layer 531_2 may be a p-type contact layer.

The first contact layer 531_1 and the second contact layer 531_2 may be formed of a conductive material layer such as Ag, Al, Ni, Cr, Cu, Au, Pd, Pt, Sn, W, Rh, Ir, , Ti, or an alloy material containing any of these. The first electrode layers 537_1 and 539_1 and the second electrode layers 537_2 and 539_2 are formed of multiple layers of the first and second barrier metal layers 537_1 and 537_2 and the first and second pad bump metal layers 539_1 and 539_2 .

In the present embodiment, the first electrode layers 537_1 and 539_1 and the second electrode layers 537_2 and 539_2 are formed as a double layer, but they may be formed as a single layer. The first electrode layers 537_1 and 539_1 and the second electrode layers 537_2 and 539_2 may be formed of the same material as the first contact layer 531_1 and the second contact layer 531_2.

The first electrode layers 537_1 and 539_1 may be electrically connected to the first contact layer 531_1 on the lower surface of the first conductive type semiconductor layer 509p. The barrier metal layer 537_1 constituting the first electrode layers 537_1 and 539_1 may be formed on the lower surface of the first conductivity type semiconductor layer 509p and may be electrically connected to the first contact layer 531_1. In FIG. 15C, reference numeral 130_1 may be a portion which is in contact with the first conductivity type semiconductor layer 509p.

The second electrode layers 537_2 and 539_2 are formed on the lower surface of the first conductivity type semiconductor layer 509p and electrically connected to the second contact layer 531_2 through the first through hole 527 and the second through hole 529. [ . The second electrode layers 537_2 and 539_2 may be electrically connected to the second conductive type semiconductor layer 513p through the second contact layer. In FIG. 15C, reference numeral 130_2 may be a portion which is in contact with the second conductivity type semiconductor layer 513p

When the reflective layer 533p is formed on the semiconductor light emitting device 500, the reflective layer 533p may be formed on the bottom and sidewalls of the first and second contact layers. When the reflective layer 533p is formed on the semiconductor light emitting device 500, the first electrode layers 537_1 and 539_1 and the second electrode layers 537_2 and 539_2 may be formed on the lower surface of the reflective layer 533p.

In the semiconductor light emitting device 500, the graded index layer 521 may be formed on the current distribution layer 519. The graded refractive index layer 521 may be a material layer for improving light extraction efficiency. The graded refractive index layer 521 may be a material layer that can reduce the refractive index of the active layer, for example, the refractive index of the air layer, that is, the refractive index of the GaN layer when the light travels at about 2.47. When the refractive index is reduced by introducing a graded index layer (521) in the semiconductor light emitting device 500, the light extraction efficiency can be improved.

The graded refractive index layer 521 may be composed of, for example, multiple layers of a titanium oxide layer (TiO ₂ ) and a silicon oxide layer (SiO ₂ ). When the graded refractive index layer 521 is composed of multiple layers of a titanium oxide layer (TiO ₂ ) and a silicon oxide layer (SiO ₂ ), the refractive index can be adjusted to about 1.83 to 2.26.

The graded refractive index layer 521 may be composed of an indium tin oxide layer obliquely deposited on the top surface of the current distribution layer 519, for example. That is, the graded-refractive-index layer 521 can form an indium tin oxide layer which is obliquely deposited by depositing an indium tin oxide source inclined at an angle with respect to a direction perpendicular to the upper surface (surface) of the current distribution layer. When the graded refractive index layer 521 is composed of an oblique deposited indium tin oxide layer, the refractive index can be adjusted to about 1.5 to 2.1.

The light-transmitting bonding layer 523 and the light-transmitting supporting substrate 525 may be formed on the graded-refractive-index layer 521. The light-transmitting bonding layer 523 can serve to bond the light-transmitting supporting substrate 525 and the graded refractive index layer 521 to each other. When the graded refractive index layer 521 is not formed, the light-transmitting bonding layer 523 can bond the current-distributing layer 519 and the light-transmitting supporting substrate 525.

The translucent bonding layer 523 may include a material selected from polyacrylate, polyimide, polyamide, and benzocyclobutene (BCB). The light transmitting bonding layer 75 may be a layer for matching the refractive index between the light transmitting support substrate 525 (or the graded refractive index layer 521) and the light emitting structure 515p.

The transparent support substrate 525 may be any transparent substrate. The light-transmitting supporting substrate 525 can be made of glass. The translucent support substrate 525 may be made of a material having excellent light transmittance such as silicone, epoxy, glass, and plastic as well as glass. The translucent bonding layer 523 may be composed of a material that is optically transparent, stable at high temperature, and high in chemical and mechanical stability. The translucent bonding layer 523 may include a benzocyclobutene-based polymer (BCB), a polydimethylsiloxane (PDMS), a UV curing agent, and a heat curing agent. The light-transmitting supporting substrate 525 may be a support containing a wavelength converting material such as a fluorescent material or a quantum dot. For example, the light-transmissive support substrate 525 may be made of a translucent liquid resin such as a silicone resin or an epoxy resin mixed with a wavelength conversion material.

As another example, when the light-transmitting supporting substrate 525 is a glass substrate, a support containing the wavelength converting material can be manufactured by mixing a wavelength conversion material such as a fluorescent material with a glass composition and firing the mixture at low temperature.

When the light-transmitting supporting substrate 525 is used, the graded refractive index layer 521 and the light-transmitting supporting member 523 may be simply formed by using the light-transmitting bonding layer 523 without using a temporal bonding process or an eutectic bonding process, The substrate 525 can be bonded.

The semiconductor light emitting device 500 according to the technical idea of the present invention as described above is configured such that the first electrode layers 537_1 and 539_1 and the second electrode layers 537_2 and 539_2 provided under the light emitting structure 515p serve as electrode pads, Or directly mounted on an external substrate in a flip chip structure.

The semiconductor light emitting device 500 according to the technical idea of the present invention may have a graded refractive index layer 521 formed on the light emitting structure 515p or a first conductive semiconductor layer 509p constituting the light emitting structure 515p, The light extraction efficiency can be improved by forming the reflective layer 533p in the through openings 527 and 529 formed in the surface of the light emitting structure 515p and the surface of the light emitting structure 515p.

FIGS. 16A to FIG. 28A and FIGS. 16B to 28B are schematic views showing major steps of a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention. Figs. 16B to 21B respectively show a top view of Figs. 16A to 21A, and Figs. 22B to 28B show rear views of Figs. 22A to 28A, respectively.

16A and 16B, a light emitting structure 515 is formed on a substrate 501 for growth. The substrate 501 for growth may be a semiconductor wafer. The substrate 501 for growth may be a silicon-based substrate. The silicon-based substrate may be a silicon (Si) substrate or a silicon carbide substrate (SiC). When the silicon substrate is used as the growth substrate 501, the package productivity can be improved because it is more suitable for large-scale curing and relatively low in cost.

The substrate for growth 501 may be made of an insulating material, a conductive material, or a semiconductor material such as sapphire, SiC, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN or the like. Sapphire, widely used as a substrate for nitride semiconductor growth, is a crystal having electrical conductivity and having Hexa-Rhombo R3c symmetry, and has lattice constants of 13.001 Å and 4.758 Å in the c-axis and the a- (0001) plane, an A (1120) plane, an R (1102) plane, and the like. In this case, the C-plane is relatively easy to grow the nitride thin film, and because it is stable at high temperature, it can be used as a substrate for nitride growth.

On the substrate for growth 501, buffer layers 503, 505 and 507 may be formed. When the silicon substrate is used as the growth substrate 501, the buffer layers 503, 505, and 507 may be further needed. The buffer layers 503, 505, and 507 may be layers for growing nitride layers of good quality with less cracks, dislocations, and the like.

The buffer layers 503, 505, and 507 may include a nucleation layer 503, a first buffer layer 505, and a second buffer layer 507. The nucleation layer 503 may be made of AlN. The first buffer layer 505 and the second buffer layer 507 have a defect reducing function and are made of Al _x In _y Ga _{1 -x- y} N (0 = x <1, 0 = y <1, 0 = x + y <1 ).

Specifically, the buffer layers 503, 505, and 507 may be implemented with any one of the structures described in FIGS. 7A to 7D.

The first conductivity type semiconductor layer 509, the active layer 511 and the second conductivity type semiconductor layer 513 are successively grown on the substrate 501 or the buffer layers 503, 505 and 507 to form the light emitting structure 515 . The light emitting structure 515 may be formed using a process such as metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE) It can be grown.

17A and 17B, an etching stopper layer 517 is formed on the upper surface of the second conductive semiconductor layer 513 constituting the light emitting structure 515. The etch stop layer 517 serves to prevent etching when forming the first through-hole in a subsequent process. The etch stop layer 517 may be formed of a silicon oxide layer (SiO2).

The etch stop layer 517 may be formed of a plurality of patterns that are separated from each other when viewed on a plane (upper surface) as shown in FIG. 17B. In addition, the etch stop layer 517 may include a circular pattern 517_1 and a bar-shaped pattern 517_2. The etch stop layer 517 may be formed by connecting the circular pattern 517_1 and the bar-shaped pattern 517_2 to each other.

18A and 18B, a current distribution layer 519 is formed on the upper surfaces of the second conductivity type semiconductor layer 513 and the etching stop layer 517. [ The current distribution layer 519 is formed of an indium tin oxide (ITO) layer. The current distribution layer 519 is formed on the upper surface of the second conductivity type semiconductor layer 513 and on the upper surface and the side surface of the etching stop layer 517.

The current distribution layer 519 is formed for applying a voltage to the second conductive type semiconductor layer 513. [ The current distribution layer 519 is formed on the entire upper surface of the etching stop layer 517 as shown in Fig. 18B. The current distribution layer 519 is formed on the entire upper surface of the etch stop layer 517 including the circular pattern 517_1 and the bar-shaped pattern 517_2 described in Fig. 17B.

Referring to FIGS. 19A and 19B, the graded index layer 521 is formed on the current distribution layer 519. The graded refractive index layer 521 may be a material layer for improving light extraction efficiency as described above. The graded refractive index layer 521 may be formed of, for example, a multilayer of a titanium oxide layer (TiO ₂ ) and a silicon oxide layer (SiO ₂ ). When the graded refractive index layer 521 is composed of multiple layers of a titanium oxide layer (TiO ₂ ) and a silicon oxide layer (SiO ₂ ), the refractive index can be adjusted to about 1.83 to 2.26.

The graded refractive index layer 521 may be composed of an indium tin oxide layer obliquely deposited on the top surface of the current distribution layer 519, for example. That is, the graded-refractive-index layer 521 can form an indium tin oxide layer which is obliquely deposited by depositing an indium tin oxide source inclined at an angle with respect to a direction perpendicular to the upper surface (surface) of the current distribution layer. When the graded refractive index layer 521 is composed of an oblique deposited indium tin oxide layer, the refractive index can be adjusted to about 1.5 to 2.1. The graded refractive index layer 521 is formed on the entire top of the etching stop layer 517 including the circular pattern 517_1 and the bar-shaped pattern 517_2 described in Fig. 17B.

20A and 20B, a translucent bonding layer 523 is formed on the graded-refractive-index layer 521. As shown in FIG. The translucent bonding layer 523 serves to bond the translucent support substrate formed later. The translucent bonding layer 523 may be composed of a material that is optically transparent, stable at high temperature, and high in chemical and mechanical stability, as described above. The translucent bonding layer 523 may include a benzocyclobutene-based polymer (BCB), a polydimethylsiloxane (PDMS), a UV curing agent, and a heat curing agent.

21A and 21B, a translucent support substrate 525 is attached on the translucent bonding layer 523. [ The graded refractive index layer 521 and the translucent support substrate 525 are bonded to each other using the translucent bonding layer 523. The transparent support substrate 525 may be any transparent substrate. When the light-transmitting supporting substrate 525 is used, the graded refractive index layer 521 and the light-transmitting supporting member 523 may be simply formed by using the light-transmitting bonding layer 523 without using a temporal bonding process or an eutectic bonding process, The substrate 525 can be bonded.

Referring to FIGS. 22A and 22B, the substrate 101 for growth is removed by using a light-transmitting supporting substrate 525. The removal of the growth substrate 101 may be performed using a wet, dry etching or laser lift-off (LLO) process. Also, mechanical coupling may be used according to the embodiment. The supporting substrate 525 is attached to the side of the second conductivity type semiconductor layer 513 of the light emitting structure 515 so that the substrate 101 is bonded to the side of the first conductivity type semiconductor layer 509 of the light emitting structure 110 It can be easily removed.

22B shows the etch stop layer 517 as a back view of FIG. 22A as described above. The etch stop layer 517 may include the circular pattern 517_1 and the bar-shaped pattern 517_2 described in FIG. 17B.

23A and 23B, the first conductive semiconductor layer 509, the active layer 511, and the first conductive semiconductor layer 513, which pass through the first conductive type semiconductor layer 509, the active layer 511, and the second conductive type semiconductor layer 513 using the etching stopper layer 517 as an etching stopper film, Through openings 527 are formed. The first penetrating opening 527 is formed to expose the lower surface of the etching stopper layer 517.

The first penetrating opening 527 is formed by forming a mask layer (not shown) on the first conductivity type semiconductor layer 509 and then forming the first conductivity type semiconductor layer 509, the active layer 511 and the second conductivity type semiconductor layer 513 may be etched.

23A and 23B, the reference numeral of the light emitting structure 515 in which the first through-hole 527 is formed is denoted by 515p. Reference numerals of the first conductivity type semiconductor layer 509, the active layer 511, and the second conductivity type semiconductor layer 513 are referred to as 509p, 511p, and 513p, respectively.

23B shows the etch stop layer 517 as a back view of FIG. 23A, as described above. The etch stop layer 517 may include the circular pattern 517_1 and the bar-shaped pattern 517_2 described in FIG. 17B. In addition, the first through-hole 527 may include a circular pattern 527_1 and a bar-like pattern 527_2 corresponding to the etch stop layer 517. [

Referring to FIGS. 24A and 24B, the etch stop layer 517 exposed by the first through-hole 527 is etched to form a second through-hole 529 communicating with the first through-hole 527. The second through-hole 529 is formed to expose the lower surface of the current distribution layer 519. The second through-hole 529 may be formed in the etch stop layer 517. The second through-hole 529 can be formed by etching the etch stop layer 517 exposed by the first through-hole 527 using a wet or dry etch process.

24A and 24B, the reference numeral of the etch stop layer 517 in which the second through-hole 529 is formed is denoted by 517p. 24B shows the current distribution layer 519 as a back view of FIG. 24A, as described above. Further, the second through-hole 529 may include a circular pattern 529_1 and a bar-shaped pattern 529_2.

25A and 25B, a first contact layer 531_1 and a second contact layer 531_2 are formed on the lower surface of the first conductive type semiconductor layer 509p and the lower surface of the second through opening 529, respectively . The first contact layer 531_1 constitutes a first electrode structure and may be electrically connected to the first conductive type semiconductor layer 509p. The first contact layer 531_1 may be an n-type contact layer.

The second contact layer 531_2 may form a second electrode structure and may be electrically connected to the second conductivity type semiconductor layer 513p through the current distribution layer 519. [ The second contact layer 531_2 may be a p-type contact layer.

25B is a rear view of FIG. 25A showing the first contact layer 531_1 and the second contact layer 531_2 in the second through-hole 529 including the circular pattern 529_1 and the bar-shaped pattern 529_2, Is formed. The first contact layer 531_1 and the second contact layer 531_2 may include a circular pattern and a bar-shaped pattern.

26A and 26B, the lower surfaces of the inner walls of the first through-hole 527 and the second through-hole 529, the first contact layer 531_1 and the second contact layer 531_2, A reflection layer 533 is formed on the lower surface of the layer 509. The reflective layer 533 is formed on the entire lower portion of the light emitting structure 515p.

The reflective layer 533 may serve to reflect light generated in the light emitting structure 515p. The reflective layer 533p is formed of a silver or copper layer. The reflective layer 533p may be formed of a distributed Bragg reflector.

Fig. 26B is a rear view of Fig. 26A as described above. The lower surface of the first contact layer 531_1 and the second contact layer 531_2 in the second through-hole 529 including the circular pattern 529_1 and the bar-shaped pattern 529_2 and the lower surface of the second contact layer 531_2, A reflective layer 533 is formed on the lower surface of the one conductivity type semiconductor layer 509. [

27A and 27B, the reflective layer 533 is etched to expose the lower surfaces of the first contact layer 531_1 and the second contact layer 531_2. A mask layer (not shown) is formed on the reflective layer 533 and then the reflective layer 533 is etched using a wet etching or a dry etching process using the mask layer as an etching mask to form the first contact layer 531_1 and the second contact layer 531_1, And exposes the lower surface of the base 531_2. 27A and 27B, reference numerals of the etched reflective layer 533 are denoted by 533p.

Fig. 27B is a rear view of Fig. 26B as described above. The bottom surfaces of the first contact layer 531_1 and the second contact layer 531_2 in the second through-hole 529 including the circular pattern 529_1 and the bar-shaped pattern 529_2 are exposed as shown in Fig. 27B , And the reflective layer 533p is formed on the lower surface of the first conductive type semiconductor layer 509p.

28A and 28B, barrier metal layers 537_1 and 537_2, which are electrically connected to the first contact layer 531_1 and the second contact layer 531_2, are formed on the lower surface of the first conductivity type semiconductor layer 509p do. The barrier metal layer 537_1 may constitute a first electrode layer, and the barrier metal layer 537_2 may constitute a second electrode layer.

The barrier metal layer 537_1 may be formed on the lower surface of the first conductive type semiconductor layer 509p and may be electrically connected to the first contact layer 531_1. The barrier metal layer 537_2 may be formed on the lower surface of the first conductive type semiconductor layer 509p and may be electrically connected to the second contact layer 531_2 through the first through opening 527 and the second through opening 529 have.

Fig. 28B is a rear view of Fig. 28A as described above. The barrier metal layers 537_1 and 537_2 are formed on the reflective layer 533p so as to be electrically connected to the first conductivity type semiconductor layer 509p and the second conductivity type semiconductor layer 513p. In Fig. 28B, reference numeral 130_1 may be a portion which is in contact with the first conductivity type semiconductor layer 509p. Reference numeral 130_2 may be a portion which is in contact with the second conductivity type semiconductor layer 513p

FIG. 29 is a cross-sectional view of the main part of a semiconductor light emitting device according to one embodiment of the technical idea of the present invention. FIG.

Specifically, the semiconductor light emitting device 500a of FIG. 29 is different from the semiconductor light emitting device 500 of FIG. 15A in that the concave and convex structure P is formed on the upper surface of the light transmitting supporting substrate 525, May be the same except that they are contained. Although not shown in FIG. 29, the concavo-convex structure may be formed on the upper surface of the second conductivity type semiconductor layer 513p in some embodiments.

When light generated from the active layer 511p due to the concavoconvex structure P is incident on the external air layer, it may be transmitted or multiply reflected to be directed upward. Therefore, the light extraction efficiency of the semiconductor light emitting device 500a can be increased. The concave-convex structure P can be formed by etching the upper portion of the light-transmitting supporting substrate 525. [

The translucent bonding layer 523 'may contain a wavelength conversion material 524 that converts at least a part of the light of the first wavelength generated from the active layer 511p into light of the second wavelength. The translucent bonding layer 523 'may include at least one bonding material selected from the group consisting of silicone, epoxy, polyacrylate, polyimide, polyamide, and benzocyclobutene. The wavelength conversion material 524 may be mixed with the bonding material before curing to provide the translucent bonding layer 523 'as a wavelength conversion element.

30 is a cross-sectional view showing the main part of a semiconductor light emitting device according to one embodiment of the technical idea of the present invention.

More specifically, the semiconductor light emitting device 500b of FIG. 30 differs from the semiconductor light emitting device 500 of FIG. 15A in that the wavelength conversion layer 124 is formed between the light-transmitting bonding layer 523 and the light- Can be the same.

30, the wavelength conversion layer 524 may be formed on the lower surface of the light-transmissive support substrate 525. [ The wavelength conversion layer 524 may include a phosphor that is excited by the light emitted from the light emitting structure 515p to emit light of a different wavelength. When the light is emitted through the phosphor, desired output light such as white light can be obtained. Although not shown in Fig. 30, the wavelength conversion layer 524 is not separately provided, and the phosphor support materials may be dispersed in the light-transmitting support substrate 525. [

The wavelength conversion layer 524 is formed by a simple process such as spray coating or spin coating on the lower surface of the translucent support substrate 525 before bonding to the graded refractive index layer 521 before bonding the translucent support substrate 525, And can be formed by applying a substance. The wavelength conversion layer 524 can be formed by attaching a sheet such as a fluorescent film or a ceramic fluorescent substance to the lower surface of the light transmissive support substrate 525. [

FIG. 31 is a cross-sectional view showing the main part of a semiconductor light emitting device according to one embodiment of the technical idea of the present invention.

Specifically, the semiconductor light emitting device 500c of FIG. 31 may be the same as the semiconductor light emitting device 500 of FIG. 15A except that the translucent support substrate 525 is replaced with a hemispherical translucent support substrate 525a .

The semiconductor light emitting device 500c may have a semi-spherical top surface of the light transmitting base substrate 525a positioned on the light path emitted from the light emitting structure 515p. That is, the upper surface on which the light is emitted from the light-transmissive supporting substrate 525a may be hemispherical.

Therefore, the light-transmitting supporting substrate 525a can serve as a lens. The semi-spherical shape of the light-transmissive support substrate 525a may be formed by etching the upper portion of the light-transmissive support substrate 525 of the foregoing embodiments.

32 is a cross-sectional view showing the main part of the semiconductor light emitting device according to one embodiment of the technical idea of the present invention.

More specifically, the semiconductor light emitting device 500d of FIG. 32 is different from the semiconductor light emitting device 500a of FIG. 29 in that a lens layer 543 is further formed on the light-transmitting supporting substrate 525 and an optical filter layer 526 is added But may be the same.

As the lens layer 543 of the semiconductor light emitting element 500d, for example, a material having excellent light transmittance and heat resistance such as silicone, epoxy, glass, and plastic can be used. The lens layer 543 is capable of adjusting the directivity angle of the light emitted through the upper surface by the convex or concave lens structure. The lens layer 543 may be selected from a resin having high transparency capable of passing light generated in the light emitting structure 515p with a minimum loss, and for example, an elastic resin, silicone, epoxy resin, or plastic may be used .

The lens layer 543 may be formed in a dome-shaped structure whose upper surface is convex as shown in Fig. 32, but the present invention is not limited thereto. Alternatively, the lens layer 543 may have an aspherical surface and / or an asymmetric shape, or a concavo-convex shape may be formed on the upper surface. The lens layer 543 may be formed on the light-transmitting supporting substrate 525, for example, by spray coating.

The semiconductor light emitting device 500d may add a light filter layer 526 between the light transmitting supporting substrate 525 and the lens layer 543. [ The optical filter layer 526 may be configured to selectively transmit light of a desired wavelength band, while selectively blocking light of an undesired wavelength band. For example, the optical filter layer 526 may be an omnidirectional reflection layer (ODR) or a Bragg reflection layer (DBR). In this case, the optical filter layer 526 may be formed by alternately forming two types of dielectric layers having different refractive indices. Alternatively, the optical filter layer 526 may include a material such as a dye.

In this embodiment, the optical filter layer 526 is formed of a light of a second wavelength (for example, green or red) converted by the wavelength converting material 524 contained in the translucent bonding layer 523 ' And can block the light of the first wavelength (e.g., blue light) that is not converted in order to increase the ratio.

In the present embodiment, the optical filter layer 526 is illustrated as being disposed on the upper surface of the light-transmissive support substrate 525, but may be arranged at other positions as necessary. For example, between the light-transmitting supporting substrate 125 and the light-transmitting bonding layer 523 '.

FIG. 33 is a cross-sectional view of the main part of a semiconductor light emitting device according to one embodiment of the technical idea of the present invention. FIG.

Specifically, the semiconductor light emitting device 500e of FIG. 33 has a support layer 545 buried in the first through-hole 527 as compared with the semiconductor light emitting device 500 of FIG. 15A, and the first electrode layers 537a_1 and 539a_1 And the second electrode layers 537a_2 and 539a_2 are different from each other and the external connection terminals 547_1 and 547_2 are further formed on the lower surface.

The supporting layer 545 may be formed on the bottom surface of the reflective layer 533p while the inside of the first through-hole 527 is filled with the semiconductor light emitting device 500e. The lower surface of the support layer 545 may have the same surface as the lower surfaces of the first electrode layers 537a_1 and 539a_1 and the second electrode layers 537a_2 and 539a_2. The supporting layer 545 may be located on the side surfaces of the first electrode layers 537a_1 and 539a_1 and the second electrode layers 537a_2 and 539a_2. The reflective layer 533p and the first electrode layers 537a_1 and 539a_1 and the second electrode layers 537a_2 and 539a_2 can be protected by the supporting layer 545 and the handling of the semiconductor light emitting element 500e can be facilitated.

The semiconductor light emitting element 500e is configured such that the first barrier metal layer 537a_1 constituting the first electrode layers 537a_1 and 539a_1 is not protruded from the lower surface of the reflective layer 533p and the second electrode layers 537a_2 and 539a_2 The second pad bump metal layer 539a_2 constituting the second pad metal layer 537a_2 is formed only on the lower surface of the second barrier metal layer 537a_2. As described above, the semiconductor light emitting device 500e can configure the first electrode layers 537a_1 and 539a_1 and the second electrode layers 537a_2 and 539a_2 in various forms.

External connection terminals 547_1 and 547_2 may be formed on the lower surfaces of the first electrode layers 537a_1 and 539a_1 and the second electrode layers 537a_2 and 539a_2, respectively. The external connection terminals 547_1 and 547_2 may be for bonding with external devices. The external connection terminals 547_1 and 547_2 may have a structure that protrudes from the first electrode layers 537a_1 and 539a_1 and the second electrode layers 537a_2 and 539a_2 and is exposed to the outside. The shapes of the external connection terminals 547_1 and 547_2 are not limited to those shown in the drawings, and may have a columnar shape such as a square column or a cylindrical column.

The external connection terminals 547_1 and 547_2 may be solder bumps. The external connection terminals 547_1 and 547_2 may include at least one of copper (Cu), aluminum (Al), silver (Ag), tin (Tin), and gold (Au).

34 and 35 are schematic cross-sectional views of a white light source module including a semiconductor light emitting device according to an embodiment of the present invention.

34, the light source module 1100 for an LCD backlight may include an array of a plurality of white light emitting devices 1100a mounted on a circuit board 1110 and a circuit board 1110. [ A conductive pattern to be connected to the white light emitting device 1100a may be formed on the upper surface of the circuit board 1110.

Each of the white light emitting devices 1100a may have a structure in which a light emitting device 1130 emitting blue light is directly mounted on a circuit board 1110 in a COB (Chip On Board) manner. The light emitting device 1130 includes at least one of the semiconductor light emitting devices 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention Lt; / RTI &gt; Each of the white light emitting devices 1100a is provided with a hemispherical shape having a lens function so that the wavelength converting portion 1150a (wavelength conversion layer) can exhibit a wide directivity angle. This wide divergence angle can contribute to reducing the thickness or width of the LCD display.

35, the light source module 1200 for an LCD backlight may include an array of a plurality of white light emitting devices 1100b mounted on a circuit board 1110 and a circuit board 1110. [ Each of the white light emitting devices 1100b may include a light emitting element 1130 emitting blue light mounted in a reflecting cup of the package body 1125 and a wavelength converting portion 1150b sealing the same. The light emitting device 1130 includes at least one of the semiconductor light emitting devices 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention Lt; / RTI &gt;

The wavelength converters 1150a and 1150b may include wavelength converting materials 1152, 1154, and 1156, such as phosphors and / or quantum dots, as needed. A detailed description of the wavelength conversion material can be found in Fig. 14 and the description thereof.

The wavelength conversion element of the semiconductor light emitting device may have a wavelength conversion element (not shown) such as a semiconductor light emitting element 50, 50a, 50b, 50c, 50d, 100, 500a, 500b, 1150a, and 1150b, or a different type of wavelength conversion material.

36 is a schematic perspective view of a backlight unit including a semiconductor light emitting device according to an embodiment of the present invention.

Specifically, the backlight unit 2000 may include a light source module 2010 provided on both sides of the light guide plate 2040 and the light guide plate 2040. The backlight unit 2000 may further include a reflection plate 2020 disposed under the light guide plate 2040. The backlight unit 2000 of the present embodiment may be an edge type backlight unit. According to the embodiment, the light source module 2010 may be provided only on one side of the light guide plate 2040, or may be additionally provided on the other side. The light source module 2010 may include a printed circuit board 2001 and a plurality of light sources 2005 mounted on the upper surface of the printed circuit board 2001. The light source 2005 includes at least one of the semiconductor light emitting devices 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention .

37 to 39 are views for explaining a backlight unit including a semiconductor light emitting device according to one embodiment of the technical idea of the present invention.

More specifically, the backlight units 2500, 2600, and 2700 are arranged such that the wavelength conversion units 2550, 2650, and 2750 are not disposed in the light sources 2505, 2605, and 2705, Units 2500, 2600, and 2700 to convert light. The light sources 2505, 2605, and 2705 are formed on the semiconductor light emitting elements 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to the embodiments of the present invention Or at least one of them. In this case, the wavelength conversion element of the semiconductor light emitting device is connected to the wavelength conversion units 2550, 2550, 2500, 2500, 2500, 2650, 2750) or other types of wavelength converting materials. For example, the wavelength conversion element includes a fluorophore having weak moisture resistance and a red phosphor, and the wavelength conversion portions 2550, 2650, and 2750 spaced from the light sources 2505, 2605, and 2705 have different wavelength conversion Materials (e.g., green quantum dots).

The backlight unit 2500 shown in FIG. 37 is a direct-type backlight unit and includes a wavelength converter 2550, a light source module 2510 arranged below the wavelength converter 2550, And a case 2560. The light source module 2510 may include a printed circuit board 2501 and a plurality of light sources 2505 mounted on the upper surface of the printed circuit board 2501.

In the backlight unit 2500, the wavelength converter 2550 may be disposed above the bottom case 2560. Therefore, at least a part of the light emitted from the light source module 2510 can be wavelength-converted by the wavelength converter 2550. The wavelength converter 2550 may be manufactured as a separate film, but may be provided in a form integrated with a light diffusion plate (not shown).

The backlight units 2600 and 2700 shown in Figs. 38 and 39 are edge type backlight units and include wavelength conversion units 2650 and 2750, light guide plates 2640 and 2740, Light sources 2605 and 2705, as shown in FIG. The light emitted from the light sources 2605 and 2705 may be guided into the light guide plates 2640 and 2740 by the reflective portions 2620 and 2720. In the backlight unit 2600 of FIG. 38, the wavelength converter 2650 may be disposed between the light guide plate 2640 and the light source 2605. In the backlight unit 2700 of Fig. 39, the wavelength converting portion 2750 may be disposed on the light emitting surface of the light guide plate 2740. Fig.

The wavelength converting units 2550, 2650, and 2750 may include conventional phosphors. In particular, a quantum dot fluorescent material can be used to compensate for the characteristics of quantum dots susceptible to heat or moisture from a light source.

40 is a schematic exploded perspective view of a display device including a semiconductor light emitting device according to an embodiment of the present invention.

Specifically, the display apparatus 3000 may include a backlight unit 3100, an optical sheet 3200, and an image display panel 3300 such as a liquid crystal panel. The backlight unit 3100 may include a light source module 3130 provided on at least one side of the bottom case 3110, the reflection plate 3120, the light guide plate 3140 and the light guide plate 3140. The light source module 3130 may include a printed circuit board 3131 and a light source 3132.

In particular, the light source 3132 may be a side view type light emitting device mounted on a side adjacent to the light emitting surface. The light source 3132 may be at least one of the semiconductor light emitting devices 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention. . The optical sheet 3200 may be disposed between the light guide plate 3140 and the image display panel 3300 and may include various kinds of sheets such as a diffusion sheet, a prism sheet, or a protective sheet.

The image display panel 3300 can display an image by using the light emitted from the optical sheet 3200. The image display panel 3300 may include an array substrate 3320, a liquid crystal layer 3330, and a color filter substrate 3340. The array substrate 3320 may include pixel electrodes arranged in a matrix form, thin film transistors for applying a driving voltage to the pixel electrodes, and signal lines for operating the thin film transistors.

The color filter substrate 3340 may include a transparent substrate, a color filter, and a common electrode. The color filter may include filters for selectively passing light of a specific wavelength among white light emitted from the backlight unit 3100. The liquid crystal layer 3330 may be rearranged by an electric field formed between the pixel electrode and the common electrode to control the light transmittance. The light having the adjusted light transmittance can display an image by passing through the color filter of the color filter substrate 3340. The image display panel 3300 may further include a drive circuit unit or the like for processing image signals.

According to the display device 3000 of the present embodiment, since the light source 3132 that emits blue light, green light, and red light having a relatively small half width is used, the emitted light passes through the color filter substrate 3340, Blue, green, and red.

41 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention; 1 is a perspective view schematically showing a flat panel illumination device.

Specifically, the flat panel illumination device 4100 may include a light source module 4110, a power supply device 4120, and a housing 4030. According to an embodiment of the present invention, the light source module 4110 may include the light emitting device array as a light source. The light source module 4110 may include at least one of the semiconductor light emitting devices 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention As a light source. The power supply 4120 may include a light emitting element driver.

The light source module 4110 may include a light emitting element array, and may be formed to have a planar phenomenon as a whole. According to an embodiment of the present invention, the light emitting device array may include a light emitting device and a controller that stores driving information of the light emitting device.

The power supply 4120 may be configured to supply power to the light source module 4110. The housing 4130 may have a receiving space such that the light source module 4110 and the power supply 4120 are received therein, and the housing 4130 may be formed in a hexahedron shape opened on one side, but is not limited thereto. The light source module 4110 may be arranged to emit light to one opened side of the housing 4130. [

42 is an exploded perspective view schematically showing a lighting device including a semiconductor light emitting device according to an embodiment of the present invention.

Specifically, the lighting apparatus 4200 may include a socket 4210, a power supply unit 4220, a heat dissipation unit 4230, a light source module 4240, and an optical unit 4250. According to an embodiment of the present invention, the light source module 4240 may include a light emitting device array, and the power source module 4220 may include a light emitting device driver.

The socket 4210 may be configured to be replaceable with an existing lighting device. The power supplied to the lighting device 4200 may be applied through the socket 4210. [ As shown in the figure, the power supply unit 4220 may be separately assembled into the first power supply unit 4221 and the second power supply unit 4222. The heat dissipating unit 4230 may include an internal heat dissipating unit 4231 and an external heat dissipating unit 4232 and the internal heat dissipating unit 4231 may be directly connected to the light source module 4240 and / So that heat can be transmitted to the external heat dissipation part 4232 through the heat dissipation part 4232. The optical portion 4250 may include an internal optical portion (not shown) and an external optical portion (not shown), and may be configured to evenly distribute the light emitted by the light source module 4240.

The light source module 4240 may receive power from the power source section 4220 and emit light to the optical section 4250. The light source module 4240 may include one or more semiconductor light emitting elements 4241, a circuit board 4242 and a controller 4243 and the controller 4243 may store driving information of the light emitting elements 4241. The semiconductor light emitting element 4241 may be formed of at least one of the semiconductor light emitting elements 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention One can be included.

FIG. 43 is an exploded perspective view schematically showing a bar-type lighting device including a semiconductor light emitting device according to an embodiment of the present invention.

Specifically, the lighting device 4400 includes a heat dissipating member 4401, a cover 4427, a light source module 4421, a first socket 4405, and a second socket 4423. A plurality of heat dissipation fins 4500 and 4409 may be formed on the inner and / or outer surface of the heat dissipation member 4401, and the heat dissipation fins 4500 and 4409 may be designed to have various shapes and spaces. A protruding support base 4413 is formed on the inner side of the heat radiation member 4401. The light source module 4421 may be fixed to the support base 4413. At both ends of the heat dissipating member 4401, a latching protrusion 4411 may be formed.

The cover 4427 is formed with a latching groove 4429 and the latching protrusion 4411 of the heat releasing member 4401 can be coupled to the latching groove 4429 with a hook coupling structure. The positions where the engaging grooves 4429 and the engaging jaws 4411 are formed may be mutually exchanged.

The light source module 4421 may include a light emitting element array. The light source module 4421 may include a printed circuit board 4419, a light source 4417, and a controller 4415. The controller 4415 can store driving information of the light source 4417. [ Circuit wirings for operating the light source 4417 are formed on the printed circuit board 4419. In addition, components for operating the light source 4417 may be included. The light source 4417 may include at least one of the semiconductor light emitting elements 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention .

The first and second sockets 4405 and 4423 have a structure which is coupled to both ends of a cylindrical cover unit composed of a heat radiation member 4401 and a cover 4427 as a pair of sockets. For example, the first socket 4405 may include an electrode terminal 4403 and a power source device 4407, and the second socket 4423 may be provided with a dummy terminal 4425. Also, the optical sensor and / or the communication module may be embedded in any one socket of the first socket 4405 or the second socket 4423. For example, the optical sensor and / or the communication module may be embedded in the second socket 4423 where the dummy terminal 4425 is disposed. As another example, the optical sensor and / or the communication module may be embedded in the first socket 4405 in which the electrode terminal 4403 is disposed.

44 is an exploded perspective view schematically showing a lighting device including a semiconductor light emitting device according to an embodiment of the present invention.

42 differs from the illumination device 4200 disclosed in FIG. 42 in that the illumination device 4500 according to the present embodiment includes a reflection plate 4310 and a communication module 4320 on the light source module 4240. The reflection plate 4310 can evenly distribute the light from the light source to the side and back to reduce glare.

A communication module 4320 can be mounted on the upper part of the reflection plate 4310 and home-network communication can be realized through the communication module 4320. For example, the communication module 4320 may be a wireless communication module using Zigbee, WiFi or LiFi, and may be turned on / off via a smart phone or a wireless controller off, brightness control, and so on. Also, by using the LIFI communication module using the visible light wavelength of the illumination device installed inside or outside the home, it is possible to control electronic products and automobile systems inside and outside the home, such as a TV, a refrigerator, an air conditioner, a door lock, and a car. The reflection plate 4310 and the communication module 4320 may be covered by a cover part 4330. [

45 is a schematic view for explaining an indoor lighting control network system including a semiconductor light emitting device according to an embodiment of the present invention.

Specifically, the network system 5000 may be a complex smart lighting-network system that combines an illumination technology using a light emitting element such as an LED, an Internet (IoT) technology, and a wireless communication technology. The network system 5000 may be implemented using various lighting devices and wired / wireless communication devices, and may be realized by software for sensors, controllers, communication means, network control and maintenance, and the like.

The network system 5000 can be applied not only to a closed space defined in a building such as a home or an office, but also to an open space such as a park, a street, and the like. The network system 5000 can be implemented based on the object Internet environment so that various information can be collected / processed and provided to the user.

The LED lamp 5200 included in the network system 5000 receives information on the surrounding environment from the gateway 5100 to control the illumination of the LED lamp 5200 itself and also controls the illumination of the LED lamp 5200 through the visible light communication And may perform functions such as checking and controlling the operation status of other devices 5300 to 5800 included in the object Internet environment. The LED lamp 5200 may include at least one of the semiconductor light emitting devices 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention . &Lt; / RTI &gt; For example, the LED lamp 5200 may be at least one of the illumination devices 4100, 4200, 4400, 4500 shown in Figs. 41 to 44.

The network system 5000 includes a gateway 5100 for processing data transmitted and received according to different communication protocols, an LED lamp 5200 communicably connected to the gateway 5100 and including LED light emitting elements, And a plurality of devices 5300 to 5800 connected to the gateway 5100 so as to communicate with each other according to a communication method. In order to implement the network system 5000 based on the object Internet environment, each of the devices 5300-5800, including the LED lamp 5200, may include at least one communication module. In one embodiment, the LED lamp 5200 may be communicatively coupled to the gateway 5100 by a wireless communication protocol such as WiFi, Zigbee, LiFi, etc., for which at least one communication module for lamps 5210 ).

The network system 5000 can be applied not only to a closed space such as a home or office, but also to an open space such as a street or a park. A plurality of devices 5300-5800 that are included in the network system 5000 and are communicatively coupled to the gateway 5100 based on object Internet technology when the network system 5000 is applied to the home, A digital door lock 5400, a garage door lock 5500, an illumination switch 5600 installed on a wall, a router 5700 for relaying a wireless communication network, and a mobile device 5800 such as a smart phone, a tablet, .

In the network system 5000, the LED lamp 5200 can check the operation status of various devices 5300 to 5800 using a wireless communication network (Zigbee, WiFi, LiFi, etc.) installed in the home, The illuminance of the LED lamp 5200 itself can be automatically adjusted. Also, it is possible to control the devices 5300 to 5800 included in the network system 5000 by using LiFi communication using the visible light emitted from the LED lamp 5200.

First, the LED lamp 5200 is controlled by an LED lamp (not shown) based on the ambient environment transmitted from the gateway 5100 via the lamp communication module 5210, or the ambient environment information collected from the sensor mounted on the LED lamp 5200 5200) can be automatically adjusted. For example, the brightness of the LED lamp 5200 can be automatically adjusted according to the type of program being broadcast on the television 5310 or the brightness of the screen. To this end, the LED lamp 5200 may receive operational information of the television 5310 from the communication module 5210 for the lamp connected to the gateway 5100. The communication module 5210 for a lamp may be modularized as a unit with a sensor and / or a controller included in the LED lamp 5200. [

For example, when the program value of a TV program is a human drama, the lighting is lowered to a color temperature of 12000K or less, for example, 5000K according to a predetermined setting value, and the color is adjusted to produce a cozy atmosphere . In contrast, when the program value is a gag program, the network system 5000 can be configured such that the color temperature is increased to 5000 K or more according to the setting value of the illumination and adjusted to the white illumination of the blue color system.

In addition, when a certain period of time has elapsed after the digital door lock 5400 is locked in the absence of a person in the home, all the turn-on LED lamps 5200 are turned off to prevent electric waste. Alternatively, if the security mode is set via the mobile device 5800 or the like, the LED lamp 5200 may be kept in the turn-on state if the digital door lock 5400 is locked in the absence of a person in the home.

The operation of the LED lamp 5200 may be controlled according to the ambient environment collected through various sensors connected to the network system 5000. For example, if a network system 5000 is implemented in a building, it combines lighting, position sensors, and communication modules within the building, collects location information of people in the building, turns the lighting on or off, In real time to enable efficient use of facility management and idle space. Generally, since the illumination device such as the LED lamp 5200 is disposed in almost all the spaces of each floor in the building, various information in the building is collected through the sensor provided integrally with the LED lamp 5200, It can be used for space utilization and so on.

Meanwhile, by combining the LED lamp 5200 with the image sensor, the storage device, and the lamp communication module 5210, it can be used as an apparatus capable of maintaining building security or detecting and responding to an emergency situation. For example, when a smoke or a temperature sensor is attached to the LED lamp 5200, damage can be minimized by quickly detecting whether or not a fire has occurred. In addition, the brightness of the lighting can be adjusted in consideration of the outside weather and the amount of sunshine, saving energy and providing a pleasant lighting environment.

As described above, the network system 5000 can be applied not only to a closed space such as a home, an office or a building, but also to an open space such as a street or a park. It is relatively difficult to implement the network system 5000 according to the distance limitation of wireless communication and communication interference due to various obstacles when the network system 5000 is applied to an open space having no physical limitations. The network system 5000 can be implemented more efficiently in the open environment by attaching sensors, communication modules, and the like to each lighting apparatus and using each lighting apparatus as the information collecting means and communication mediating means.

46 is a schematic view for explaining a network system including a semiconductor light emitting device according to an embodiment of the present invention.

Specifically, FIG. 46 shows an embodiment of a network system 6000 applied to an open space. The network system 6000 includes a communication connection device 6100, a plurality of lighting devices 6120 and 6150 installed at predetermined intervals and communicably connected to the communication connection device 6100, a server 6160, a server 6160, A communication base station 6180, a communication network 6190 for connecting communication-enabled equipment, and a mobile device 6200, for example.

Each of a plurality of lighting devices 6120 and 6150 installed in an open external space such as a street or a park may include a smart engine 6130 and 6140. The smart engines 6130 and 6140 may include a light emitting element for emitting light, a driving driver for driving the light emitting element, a sensor for collecting information on the surrounding environment, and a communication module. The light emitting device included in the smart engine includes at least one of the semiconductor light emitting devices 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention It can be either.

The communication modules enable the smart engines 6130 and 6140 to communicate with other peripheral devices in accordance with communication protocols such as WiFi, Zigbee, and LiFi.

In one example, one smart engine 6130 may be communicatively coupled to another smart engine 6140. At this time, the WiFi extension technology (WiFi mesh) may be applied to the communication between the smart engines 6130 and 6140. At least one smart engine 6130 may be connected by wire / wireless communication with a communication link 6100 that is connected to the communication network 6190. In order to increase the efficiency of communication, several smart engines 6130 and 6140 may be grouped into one group and connected to one communication connection device 6100.

The communication connection device 6100 is an access point (AP) capable of wired / wireless communication, and can mediate communication between the communication network 6190 and other devices. The communication connection device 6100 may be connected to the communication network 6190 by at least one of a wire / wireless method and may be mechanically housed in any one of the lighting devices 6120 and 6150, for example.

The communication connection device 6100 may be connected to the mobile device 6200 through a communication protocol such as WiFi. The user of the mobile device 6200 receives the peripheral environment information collected by the plurality of smart engines 6130 and 6140 through the communication connection device 6100 connected to the smart engine 6130 of the nearby surrounding lighting device 6120 can do. The surrounding environment information may include surrounding traffic information, weather information, and the like. The mobile device 6200 may be connected to the communication network 6190 in a wireless cellular communication scheme such as 3G or 4G via a communication base station 6180.

On the other hand, the server 6160 connected to the communication network 6190 receives the information collected by the smart engines 6130 and 6140 attached to the respective lighting devices 6120 and 6150, And the like. The server 6160 can be connected to a computer 6170 that provides a management system to manage each luminaire 6120 and 6150 based on the monitoring results of the operating status of each luminaire 6120 and 6150. The computer 6160 may execute software or the like that can monitor and manage the operating status of each lighting apparatus 6120, 6150, particularly the smart engines 6130, 6140.

47 is a block diagram for explaining a communication operation between a smart engine and a mobile device of a lighting device having a semiconductor light emitting device according to an embodiment of the present invention.

47 is a block diagram for explaining the communication operation between the smart engine 6130 and the mobile device 6200 of the lighting device (6120 of FIG. 46) by visible light wireless communication. Various communication schemes may be applied to deliver the information collected by the smart engine 6130 to the user's mobile device 6200.

Information collected by the smart engine 6130 may be transmitted to the mobile device 6200 or may be transmitted to the smart engine 6130 and the mobile device 6200 via a communication link (6100 of FIG. 40) Can be directly connected. The smart engine 6130 and the mobile device 6200 can communicate directly with each other by visible light wireless communication (LiFi).

The smart engine 6130 may include a signal processor 6510, a controller 6520, an LED driver 6530, a light source 6540, a sensor 6550, and the like. The mobile device 6200 connected to the smart engine 6130 by visible light wireless communication includes a control unit 6410, a light receiving unit 6420, a signal processing unit 6430, a memory 6440, an input / output unit 6450, and the like .

The visible light wireless communication (LiFi) technology is a wireless communication technology that wirelessly transmits information by using visible light wavelength band visible to the human eye. Such a visible light wireless communication technology is distinguished from existing wired optical communication technology and infrared wireless communication in terms of utilizing light in a visible light wavelength band, that is, a specific visible light frequency from a light emitting device or a lighting device described in the above embodiments, In terms of wireless, it is distinguished from wired optical communication technology. In addition, unlike RF wireless communication, visible light wireless communication technology has the advantage that it can be freely used without being regulated or licensed in terms of frequency utilization, has excellent physical security, and has a difference in that a user can visually confirm a communication link. And has the characteristic of being a convergence technology that can obtain the intrinsic purpose of the light source and the communication function at the same time.

The signal processing unit 6510 of the smart engine 6130 can process data to be transmitted / received through visible light wireless communication. In one embodiment, the signal processing unit 6510 may process the information collected by the sensor 6550 into data and transmit it to the control unit 6520. [ The control unit 6520 can control the operations of the signal processing unit 6510 and the LED driver 6530 and can control the operation of the LED driver 6530 based on the data transmitted by the signal processing unit 6510 . The LED driver 6530 can transmit the data to the mobile device 6200 by emitting the light source unit 6540 according to the control signal transmitted from the control unit 6520. [

The mobile device 6200 includes a control unit 6410, a memory 6440 for storing data, an input / output unit 6450 including a display, a touch screen, and an audio output unit, a signal processing unit 6430, And a light receiving portion 6420 for recognizing the light. The light receiving unit 6420 can detect visible light and convert it into an electric signal, and the signal processing unit 6430 can decode data included in the electric signal converted by the light receiving unit. The control unit 6410 may store the decoded data of the signal processing unit 6430 in the memory 6440 or output the decoded data to the user through the input / output unit 6450 or the like.

FIG. 48 is a conceptual diagram schematically showing a smart lighting system having a semiconductor light emitting device according to an embodiment of the present invention.

Specifically, the smart lighting system 7000 may include an illumination unit 7100, a sensor unit 7200, a server 7300, a wireless communication unit 7400, a control unit 7500, and an information storage unit 7600. The illumination unit 7100 includes one or a plurality of illumination devices in the dried product, and there is no limitation on the type of the illumination device. For example, it may include basic lighting such as a living room, a room, a balcony, a kitchen, a bathroom, a staircase, and a porch, a mood lighting, a stand lighting, The illumination device includes at least one of the semiconductor light emitting devices 50, 50a, 50b, 50c, 50d, 100, 500, 500a, 500b, 500c, 500d, 500e according to one embodiment of the present invention . For example, the illumination device may be at least one of the illumination devices 4100, 4200, 4400, 4500 shown in Figs.

The sensor unit 7200 senses an illumination state related to lighting, lighting, and intensity of each illumination device, and outputs a signal corresponding to the illumination state, and transmits the signal to the server 7300. The sensor unit 7200 may be provided in a structure in which a lighting device is installed, and may be disposed at a position where all the lighting devices under the control of the smart lighting system can sense the lighting condition, Can be provided together.

The information on the illumination state may be transmitted to the server 7300 in real time, or may be transmitted in a time division manner by dividing the illumination state by a predetermined time unit such as minute or hour. The server 7300 may be installed inside and / or outside the building. The server 7300 receives a signal from the sensor unit 7200, collects information on the illumination state of the illumination unit 7100 on and off, And provides the wireless communication unit 7400 with information on the defined pattern by defining the illumination pattern based on the grouped information. It may also serve as an intermediary for transmitting the command received from the wireless communication unit 7400 to the control unit 7500.

In detail, the server 7300 receives the signal transmitted from the sensor unit 7200 by sensing the illumination state of the building, and collects information on the illumination state and analyzes the information. For example, the server 7300 can divide the collected information into various time period groups, such as hourly, daily, weekday, weekday, weekly, set specific days, weekly, month, Thereafter, the server 7300 programs a 'defined illumination pattern' defined by an average day unit, week unit, week unit, or monthly illumination pattern on the basis of information grouped into several groups. The 'defined illumination pattern' may be periodically provided to the wireless communication unit 7400 or may be provided from the server 7300 by requesting information provision when the user requests information on the illumination pattern.

In addition to defining the illumination pattern from the information about the illumination state provided from the sensor unit 7200, the server 7300 may transmit the 'general illumination pattern' pre-programmed in the home to the wireless And may be provided to the communication unit 7400. The method of providing the 'general illumination pattern' may be provided periodically from the server 7300 as in the case of the 'defined illumination pattern', or may be provided when requested by the user. Although one server 7300 is shown in Fig. 48, two or more servers may be provided as needed. Optionally, the 'general illumination pattern' and / or the 'defined illumination pattern' may be stored in the information storage 7600. The information storage unit 7600 may be a storage device accessible via a network, which is called a cloud.

The wireless communication unit 7400 selects any one of the plurality of illumination patterns provided from the server 7300 and / or the information storage unit 7600 and transmits an 'automatic lighting mode' execution and stop command signal to the server 7300 A variety of portable wireless communication devices such as a smart phone, a tablet PC, a PDA, a notebook, and a netbook that can be carried by a user using a smart lighting system can be applied.

Specifically, the wireless communication unit 7400 receives various defined illumination patterns from the server 7300 and / or the information storage unit 7600, selects a necessary one of the illumination patterns, and transmits the selected illumination patterns to the illumination unit 7100 May be transmitted to server 7300 so that an &quot; automatic lighting mode &quot; Alternatively, the command signal may be transmitted after determining the execution time, or the command signal may be transmitted without determining the stop time, and the stop signal may be transmitted when necessary to stop the execution of the 'automatic lighting mode'.

The wireless communication unit 7400 further has a function of partially modifying the illumination pattern provided from the server 7300 and / or the information storage unit 7600 by a user, or operating a new illumination pattern in some cases can do. The 'customized illumination pattern' modified or newly operated as described above is stored in the wireless communication unit 7400 and automatically transmitted to the server 7300 and / or the information storage unit 7600, can do. In addition, the wireless communication unit 7400 may automatically receive a 'defined illumination pattern' and a 'general illumination pattern' set by the server 7300 from the server 7300 and / or the information storage unit 7600, May be provided to the server 7300 by being transmitted.

In this way, the wireless communication unit 7400 exchanges necessary commands or information signals with the server 7300 and / or the information storage unit 7600, and the server 7300 receives signals from the wireless communication unit 7400, the sensor unit 7200, 7500), the smart illumination system of the present invention can be operated.

Here, the connection between the wireless communication unit 7400 and the server 7300 can be performed using, for example, an application which is an application program of a smart phone. That is, the user can give an instruction to the server to execute an 'automatic lighting mode' through the application downloaded to the smartphone, or to provide information on 'user-set illumination pattern' applied by the user.

The method of providing information may be automatically performed by the storage of the &quot; user set illumination pattern &quot; to the server 7300 and / or the information storage 7600 or by performing an operation for transmission. This can be set to the default settings of the application or can be selected by the user according to the option.

The control unit 7500 receives the execution and stop command signals of the 'automatic lighting mode' from the server 7300 and executes the 'automatic lighting mode' to the illumination unit 7100 to control one or a plurality of lighting devices. That is, the control unit 7500 may turn on, off, or otherwise control each lighting device included in the illumination unit 7100 according to an instruction from the server 7300. [

In addition, the smart lighting system 7000 may further include an alarm device 7700 in the building. The alarm device 7700 is provided to warn an intruder in the building.

Specifically, when an 'automatic lighting mode' is being executed in the absence of a user, when an intruder in the building is generated and an abnormality occurs that deviates from the set illumination pattern, the sensor unit 7200 detects it, To the server 7300. The server 7300 notifies the wireless communication unit 7400 of this and simultaneously transmits a signal to the control unit 7500 so as to operate the alarm apparatus 7700 in the building.

In addition, when the warning signal is transmitted to the server 7300, the server 7300 may further include a system for notifying the security company of an emergency through the wireless communication unit 7400 or directly via the TCP / IP network have.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or essential characteristics thereof. .

Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but are intended to illustrate and not limit the scope of the technical spirit of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas which are within the scope of the same should be interpreted as being included in the scope of the present invention.

50, 100, 500: semiconductor light emitting element,
30, 130, 515, 515p: light emitting structure,
32, 132, 509, 509p: a first conductivity type semiconductor layer,
35, 135, 511, 511p: active layer,
37, 137, 513, 513p: a second conductivity type semiconductor layer,
517, 517p: etch stop layer,
527, 529: through openings,
519: current distribution layer,
521: Graded refractive index layer,
75, 175, 523: translucent bonding layer,
71, 171, 525: a light-transmitting supporting substrate,

Claims (20)

A semiconductor light emitting device comprising: first and second conductive semiconductor layers having first and second surfaces opposite to each other and providing the first and second surfaces, respectively, and an active layer disposed therebetween; A light emitting structure having one side of the first conductive semiconductor layer opened and having irregularities formed on the first side;
First and second electrodes arranged in the one region of the first conductivity type semiconductor layer and one region of the second conductivity type semiconductor layer, respectively;
A translucent support substrate disposed on a first surface of the light emitting structure; And
And a translucent bonding layer disposed between the first surface of the light emitting structure and the translucent support substrate and having a refractive index between a refractive index of the first conductivity type semiconductor layer and a refractive index of the translucent support substrate.
The method according to claim 1,
Wherein the light-transmitting bonding layer includes a wavelength converting material for converting a wavelength of light generated from the active layer to another wavelength.
The method according to claim 1,
Characterized in that the translucent bonding layer comprises at least one material selected from the group consisting of polyacrylate, polyimide, polyamide and benzocyclobutene (BCB). Light emitting element.
The method according to claim 1,
Wherein the light-transmitting supporting substrate is a glass substrate.
The method according to claim 1,
Further comprising a wavelength conversion layer disposed on one surface of the light transmissive support substrate and containing a wavelength conversion material for converting a wavelength of light generated from the active layer to another wavelength.
The method according to claim 1,
Wherein the area of the first surface of the light emitting structure is greater than or equal to 80%.
The method according to claim 1,
The one region of the first conductivity type semiconductor layer is opened by a hole penetrating the second conductivity type semiconductor layer and the active layer,
Wherein the first electrode has first and second openings for respectively opening the one region of the first conductivity type semiconductor layer and the one region of the second conductivity type semiconductor layer, And a second insulating layer that opens one region of the second electrode and covers another region of the second electrode,
Wherein the first electrode is disposed in the first opening and has a portion extending to an upper surface of the second insulating layer.
8. The method of claim 7,
And an extended portion of the first electrode is disposed to overlap the second electrode with the second insulating layer interposed therebetween.
A semiconductor light emitting device comprising: first and second conductive semiconductor layers having first and second surfaces opposite to each other and providing the first and second surfaces, respectively, and an active layer disposed therebetween; A light emitting structure having one region of the first conductivity type semiconductor layer opened;
First and second electrodes arranged in the one region of the first conductivity type semiconductor layer and one region of the second conductivity type semiconductor layer, respectively;
A translucent support substrate disposed on a first surface of the light emitting structure; And
And a translucent bonding layer disposed between the first surface of the light emitting structure and the translucent support substrate and containing a wavelength conversion material for converting at least a part of the light of the first wavelength generated from the active layer into light of the second wavelength .
10. The method of claim 9,
And a light filter layer disposed on one surface of the light transmissive support substrate and intercepting light of the first wavelength and transmitting light of the second wavelength.
11. The method of claim 10,
And a color filter layer disposed on the optical filter layer and selectively transmitting light of a part of the second wavelength.
12. The method of claim 11,
And a light diffusion layer disposed on the color filter layer for diffusing the emitted light.
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and having a first penetrating opening formed therein;
An etch stop layer formed on the upper surface of the second conductive type semiconductor layer constituting the light emitting structure and including a second through opening communicating with the first through hole;
A current distribution layer formed on an upper surface of the second conductivity type semiconductor layer, the second penetrating opening, and the etching stopper layer which constitute the light emitting structure;
A first electrode structure formed on a lower surface of the first conductive semiconductor layer and electrically connected to the first conductive semiconductor layer;
A second electrode structure formed on a lower surface of the first conductive semiconductor layer and electrically connected to the current distribution layer through the first through-hole and the second through-hole;
A light-transmitting bonding layer formed on the current distribution layer; And
And a translucent support substrate bonded on the translucent bonding layer.
14. The method of claim 13,
Wherein the first conductivity type semiconductor layer is an n-type semiconductor layer, and the second conductivity type semiconductor layer is a p-type semiconductor layer.
14. The method of claim 13,
And a graded index layer disposed between the current distribution layer and the light-transmitting junction layer.
16. The method of claim 15,
Wherein the graded index layer comprises multiple layers of a titanium oxide (TiO ₂ ) layer and a silicon oxide (SiO ₂ ) layer.
16. The method of claim 15,
Wherein the graded refractive index layer comprises an oblique deposited indium tin oxide layer on the top surface of the current distribution layer.
18. The method of claim 17,
Wherein the light-transmitting bonding layer has a refractive index between a refractive index of the first conductivity type semiconductor layer and a refractive index of the light-transmitting support substrate.
18. The method of claim 17,
Wherein the light-transmitting bonding layer includes a wavelength converting material for converting a wavelength of light generated from the active layer to another wavelength.
18. The method of claim 17,
An inner wall of the first through-hole and the second through-hole, and a reflective layer disposed on a lower surface of the first conductive-type semiconductor layer.

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